JP2003142523A - Electronic component and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic component wherein a failure due to the infiltration of sealing resin into a cavity in the component is prevented. SOLUTION: A device chip 1 having a specified functional part 8 and a substrate 3 made of a specified material are electrically and mechanically connected with each other by conductive bumps 2, so that a specified cavity 7 containing the functional part 8 is formed between the chip 1 and the substrate 3. External pheripheries of the chip 1 and the substrate 3 are sealed by resin 5 for shielding the part 8 to be from the outer atmosphere. In an electronic component 100 designed in this manner, a damming member 20 made of low melting point metal is installed between the chip 1 and the substrate 3 outside the part 8 and inside the location planned for the resin 5 for preventing the infiltration of the resin 5 prior to the sealing by the resin 5.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of an electronic component device using, for example, a bump connection method and a resin sealing method.

[0002]

2. Description of the Related Art As a typical example of an electronic component device using a bump connection method, a surface acoustic wave filter device (surface acoustic
stic wave filter device; also called SAW filter). The surface acoustic wave filter device is configured by forming a functional portion (interdigital converter / IDT) having comb-shaped electrodes on a piezoelectric substrate (device chip). Since this surface acoustic wave filter device is a passive element, it can operate without a power supply, and since it is small and lightweight, it is often used in mobile phones and the like that require high-density mounting of electronic component devices.

The electrical and mechanical connection between the device chip in the electronic component device and its envelope (package) is
It is becoming mainstream to be performed by a flip chip bonding method using metal bumps.

As a known example using such a flip chip bonding (or face down bonding) method, for example, "Surface acoustic wave device and its manufacturing method" disclosed in Japanese Patent Laid-Open No. 2001-94390.
There is.

The flip chip bonding method will be briefly described below, though not shown.
That is, basically, a bump is previously formed on a device chip by using a metal wire or the like, and this bumped device chip is formed on a surface of a package made of ceramics or the like by using a flip chip bonder. Mount on the pattern. Then, the bump metal and the wiring pattern are joined by simultaneously performing pressurization / heating / application of ultrasonic waves. This joining provides electrical and mechanical connection between the device chip and the package. afterwards,
Sealing is performed with a cap made of metal or ceramics to complete the final electronic component device.

In such a conventional electronic component device,
In order to reduce the size and thickness, it is necessary to make the envelope (generally a ceramic package / cap) small, but the processing accuracy of ceramics is extremely poor, and the material is hard and brittle. There were limits to miniaturization and thinning. Further, in order to reduce the cost of the electronic component device, it is necessary to reduce the cost of the envelope, which occupies most of the total component cost, but there is a limit in reducing the cost.

Therefore, recently, a method of sealing and adhering the device chip and the package with a sealing resin instead of using a sealing cap has been studied. In this method, the cap is not required, so that the electronic component device can be configured in a direction advantageous in terms of cost and size.

[0008]

For example, in a SAW filter utilizing surface acoustic waves, the active electrode pattern formed on the surface of the device chip and configured to operate the surface waves is held in the hollow portion. If foreign matter such as water adheres to the electrode pattern held in the hollow space, the electrode may corrode and may not function as a filter. Therefore, an electronic component device having a functional portion such as a SAW filter that does not like foreign matter from adhering must prevent foreign matter such as moisture from entering (or entering) from the outside. In order to prevent such a defect due to invasion / invasion of foreign matter, sealing is performed.

That is, in the electronic component device having a structure in which the device chip and the package are connected by using the flip chip bonding method, it is necessary to protect the functional part of the device chip (such as the electrode pattern part of the SAW filter) from the outside (outside air). Yes, and for that, sealing is performed.

The encapsulating resin used for the above encapsulation has a property of hermetically encapsulating the device chip and the package and a gap (SAW) between the device chip and the package.
The filter is required to have two characteristics, including the electrode pattern but hardly entering the hollow portion). Regarding the former hermetic sealing property, since the sealing resin needs to be completely adhered to the device chip and the package having different surface states / roughnesses, it is generally necessary that the resin has good wettability. On the other hand, with regard to the latter non-penetration characteristic, on the contrary, it is necessary that the wettability is poor because the sealing resin does not enter the gap between the device chip and the package.

In order to satisfy the two contradictory characteristics as described above, generally, the viscosity and thixotropy of the sealing resin (thixotro
Py) is controlled and adjusted to obtain an appropriate sealing resin. However, the resin characteristics easily change due to changes with time and temperature changes, and it is difficult to control (or manage) the resin invasion property. Therefore, it is unavoidable that the resin characteristics vary to some extent.

When the characteristics of the sealing resin vary, the package and the resin cannot be properly connected to each other, resulting in a defective sealing, or the wettability of the sealing resin cannot be controlled, and the electrode pattern inside the electronic component device is not controlled. An entry failure occurs in which the sealing resin enters the part. Unless these defects are eliminated, it is difficult to mass-produce the resin-sealed electronic component device at a practical level.

The present invention has been made in view of the above circumstances, and an object thereof is to provide an electronic component device and a method of manufacturing the same that prevent the occurrence of the above defects.

[0014]

An electronic component device (100) according to an embodiment of the present invention comprises a device chip (1) having a predetermined functional portion (8) and a predetermined material (resin or ceramics). The device chip (1) and the substrate (3) have conductive bumps (2) so that a predetermined space (7) including the functional portion (8) is formed between the device chip (1) and the substrate (3). ) Via electrical and mechanical connection. The device chip (1) is so arranged that the functional part (8) is shielded from the external atmosphere.
And the outer periphery of the substrate (3) is sealed with the resin (5). Electronic component device (100) configured in this manner
In, the device chip (1) and the substrate (3)
Of the resin (5) outside the place where the functional part (8) of the device chip (1) is arranged and inside the place where the resin (5) is arranged. Dam member made of low melting point metal for preventing entry (20)
(Before the sealing with the resin (5) is performed).

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION An electronic component device and a manufacturing method thereof according to an embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a view for explaining the internal structure of an electronic component device (resin-sealed surface acoustic wave device) 100 according to an embodiment of the present invention. FIG. 1A schematically illustrates a side cross section of the electronic component device, and FIG. 1B schematically illustrates a configuration of the electronic component device when viewed from above.

A wiring pattern 4 is formed at a predetermined position on a substrate (package of the electronic component device 100) 3 made of resin or ceramics. Further, an electrode 8 having a predetermined function is formed at a predetermined position on the device chip 1. In the case of the surface acoustic wave filter device, the comb-teeth-shaped electrode pattern (interdigital converter IDT) formed on the piezoelectric substrate 1 has electrodes 8 having a predetermined function.
Corresponding to. A plurality of (four in the example of FIG. 1B) pads are connected to the electrode 8 via lead patterns. These pads (4) and the predetermined locations (4 locations) of the wiring pattern 4 on the substrate 3 are arranged to face each other via the metal bumps 2 (4) using gold or a gold alloy. It

Prior to this facing arrangement, a gap 9 shown in FIG. 1A is left between the outer peripheral portion of the device chip 1 facing the substrate 3 via the metal bump 2 and the surface of the substrate 3. In addition, the dam 20 is provided at a position that encloses the hollow portion 7 directly below the electrode 8. The dam 20 is made of a material that can be melted (liquefied) or at least plastically deformed (softened) to form a continuous structure in the flip chip bonding or face-down bonding process described below. For example, the melting point is 250
Tin-based alloys (tin-lead solder, lead-less solder, etc.) having a melting point of lower than or equal to 0 ° C. can be used for the dam 20. Specifically, solder having a tin content of about 60% ± 10% (including eutectic solder) can be used for the dam 20 (in such solder, the melting point is lowered to 180 ° C. to 200 ° C. or lower). be able to).

The material (solder or the like) of the dam 20 before flip chip bonding is attached to the substrate 3 and / or the device chip 1. For example, when the material of the dam 20 is attached to the substrate 3, the dam material may or may not be in contact with the device chip 1 side.

In the above state, the device chip 1 and the substrate 3
The metal bump 2 between and is partially melted by applying pressure, heating, and application of ultrasonic waves (flip chip bonding or face down bonding). At this time, the dam material (solder or the like) 20 is also melted (liquefied) or at least plastically deformed (softened) to become a continuous body in close contact with both the device chip 1 and the substrate 3 (or at least one of them). This continuum, after cooling,
The dam 20 is exemplified as shown in (a) and (b).

When the above-mentioned pressurization / heating / application of ultrasonic waves is completed, the melted portion of the metal bump 2 and the melted (or softened) portion of the dam member 20 are cooled and solidified. As a result, the pads (4) connected to the electrodes 8 and the predetermined locations (4 locations) of the wiring pattern 4 on the substrate 3 are electrically and mechanically connected via the metal bumps 2 (4). Connected. In this state, the space between the electrode 8 formed on the surface of the device chip 1 and the wiring pattern 4 formed on the surface of the substrate 3 has a size corresponding to the arrangement / size of the metal bump 2 (deformed by bonding). A space of height (hollow portion 7) is secured. Further, the dam material 20 which has been cooled and solidified forms the dam 20 at a position that includes the metal bump 2 together with the electrode 8 / hollow portion 7 and forms a gap 9 between the dam material 20 and the metal bump 2.

After that, between the outer peripheral part of the device chip 1 and the surface of the substrate 3 (outside the dam 20), which is arranged so as to face the substrate 3 with the metal bumps 2 in between, a seal having appropriate viscosity and thixotropy is formed. Resin 5 is applied. The sealing resin 5 having thixotropy changes into a fluid having appropriate "wettability" by application of ultrasonic waves, and comes into close contact with the outside of the dam 20, the device chip 1 and the substrate 3. After that, when the application of ultrasonic waves is finished, the sealing resin 5 is solidified again and the internal electrode 8 is shielded from the external atmosphere (outside air). To what degree the viscosity and thixotropy are suitable for the sealing resin 5 used can be determined by testing several kinds of samples before actually manufacturing the product. The ultrasonic wave output, the application time, the application direction, etc. applied at the time of sealing with the sealing resin 5 can be determined by trial using a sample corresponding to an actual product. In this way, the electrode 8 of the device chip 1 held in the hollow portion 7 includes the device chip 1, the substrate 3, the dam 20,
The combination of the sealing resin 5 and the sealing resin 5 makes it airtight.

"Wettability" in the above resin sealing step
The resin 5 that has changed to a fluid having a block is blocked by the dam 20 and is inside the device 100 (on the side of the hollow portion 7 including the electrode 8).
Can't enter. That is, by providing the dam 20, it is possible to prevent a defective entry of the sealing resin 5 into the functional portion (electrode 8) inside the electronic component device 100.

Solder as the material of the dam 20 is applied to the substrate 3
There are various methods for attaching (and / or device chip 1) to a predetermined position. Specifically, for example, there is a method in which a copper pattern is provided at a predetermined location on the substrate 3 and solder plating is performed on the copper pattern (a copper pattern is first attached to a copper foil, and a mask is applied to a portion to be left as a pattern). , Can be obtained by removing unnecessary copper foil by etching). Alternatively, there is also a method of applying (or printing) a solder paste containing minute solder particles to predetermined portions of the substrate 3 and / or the device chip 1. Alternatively, there is also a method in which solder balls having a predetermined size are scatteredly arranged at predetermined positions on the substrate 3 and / or the device chip 1.

When the material of the dam 20 is a conductive metal such as solder, the dam solder should be arranged at least at the positions of the signal wiring pattern 4 and the metal bumps 2 (for example, the dam). 20 does not contact the pattern 4 and the bump 2 other than the ground pattern or the power supply pattern).

However, when an electrical insulator can be used as the dam 20, the above-mentioned consideration "to avoid the positions of the wiring pattern 4 and the metal bumps 2" is not always necessary (however, under any circumstances. However, a part of the dam material should not enter the hollow portion 7 and adhere to the electrode 8). That is, it is ensured that the resin 5 does not enter the inside of the device (the electrode 8 side) during the flip chip bonding (or the manufacturing process after that and before the resin sealing), and that the resin 5 enters the inside of the device during the sealing. As long as it is a material that can be blocked, not only a conductive material such as solder but also an insulating material can be used as the material of the dam 20. However, at the present time, tin-based alloy (solder) is a material that is highly practical and can be reliably used as the dam 20.
Is recommended.

The use of a low melting point metal such as solder for the dam 20 has the following advantages over the use of a liquid resin material such as polyimide or epoxy as the dam material: (1) dam When a liquid resin material such as polyimide or epoxy is used as the material, the dam is patterned in the wafer state by the photolithography technique or the screen printing technique, and the patterned resin material is cured by heat or ultraviolet (UV) irradiation. In this case, it is necessary to form the dam so that its height is approximately the same as the height of the gap between the device chip and the package. However, it is difficult to control the height of the gap between the device chip and the package after flip chip bonding due to variations in flatness on the package side. For example, the dam material formed on the device chip side does not completely contact the package ( A gap is created between the dam and the package). This indicates that the dam may not be able to reliably block the entry of the sealing resin. When a low melting point metal such as solder is used for the dam 20, the dam material can be liquefied (or softened) by the heat during flip chip bonding and adhere to both the device chip and the package. Can be wiped off.

(2) Alternatively, the cured resin may become higher than the gap height between the device chip and the package. In this case, the dam itself is like a "spacer that is too thick forcibly pushed in" because it is hard (the dam is forcibly pressed against the package). Then, during flip chip bonding, energy such as pressing force and ultrasonic output that should originally contribute to the deformation and connection of the bumps is lost at the dam, so that proper bump bonding may not be performed. When a low melting point metal such as solder is used for the dam 20, the dam material is liquefied (or softened) more easily than the melting of the bumps 2 due to heat during flip chip bonding, so that such fear can be eliminated. .

The main role of the dam 20 in this embodiment is to prevent the resin 5 liquefied during resin sealing and entering into the inside from adhering to the electrode 8.
Therefore, as long as its role can be fulfilled, dam 2
It is acceptable from a practical point of view that a slight gap is generated between 0 and the device chip 1 and / or between the dam 20 and the substrate 3. (The sealing resin 5 has an airtight function of shielding the electrode 8 from the external atmosphere.) FIG.
It is a figure explaining the internal structure of the electronic component apparatus which concerns on other embodiment of this invention. The main difference between the embodiment shown in FIG. 1 and the embodiment shown in FIG. 2 lies in the arrangement position of the dam 20.

That is, in the embodiment of FIG. 2, the substrate (package of the electronic component device 100) 3 on which the wiring pattern 4 is formed and the device chip 1 on which the electrode 8 is formed are connected via the metal bumps 2. It is arranged to face each other. Prior to this facing arrangement, a dam 20 such as a solder is provided at a position between the peripheral portion of the electrode 8 on the device chip 1 and the surface of the substrate 3 so as to include the hollow portion 7 around the electrode 8. Are provided (the dam 20 should not contact the electrode 8). At this time, the solder dam 20 must not short-circuit the lead wiring 82 from the electrode 8 shown in FIG. 1B, so that the dam 20 avoids the lead wiring 82.
The escape portion 22 is provided (when the lead wiring 82 is coated with the insulating coat 22, the escape portion 22 does not have to be provided specially).

In this structure, the liquefied resin 5 may enter the gap 9 outside the dam 20 when the resin 5 is sealed, but the entered resin 5 is blocked by the dam 20. There is no risk of ingress resin adhering to.

Incidentally, also in this embodiment, the dam 2
The main role of 0 is to prevent the resin 5 liquefied during resin sealing and entering into the inside from adhering to the electrode 8. Therefore, as far as its role can be fulfilled, it is provided between the dam 20 and the device chip 1 and / or the dam 2
It is acceptable to have a slight gap between 0 and the substrate 3. From this, for example, when the dam 20 is provided on the substrate 3 side, the height of the dam 20 is lowered at the portion facing the lead wire 82 in FIG. 1B so that the head of the dam 20 does not contact the lead wire 82. It may be configured as follows. If it is confirmed (by a sample test or the like) that the resin does not enter at the time of encapsulation even in a portion that does not face the lead-out wiring 82, the head of the dam 20 in that portion does not touch the device chip 1. It may be like this.

FIG. 3 is a diagram for explaining the internal structure of an electronic component device according to still another embodiment of the present invention. The main difference between the embodiment shown in FIG. 3 and the embodiment shown in FIG. 1 or 2 lies in the arrangement position of the dam 20.

That is, in the embodiment shown in FIG.
In the vertical direction of FIG. 3B, the dam 20 is arranged outside the metal bump 2 (on the side of the sealing resin 5) as in the embodiment of FIG. 1, and in the horizontal direction of FIG. The dam 20 is arranged inside the metal bump 2 (on the side of the electrode 8) similarly to the above embodiment (of course, the dam 20 does not contact the electrode 8). The dam 20 blocks the liquefied resin 5 from entering the electrode 8 side at the time of sealing.

FIG. 4 is a diagram for explaining an example of attaching a dam member (solder or the like) to the outside of the bump on the substrate in the process of manufacturing the electronic component device according to the embodiment of the present invention. Here, the member for the dam 20 is continuously attached to a predetermined location on the substrate 3 that includes the positions of the electrodes 8 and the bumps 2 on the device chip 1 that are arranged to face each other later. This dam member is applied to a predetermined location on the substrate 3 by a method such as solder plating using a copper foil as a base, application of a solder paste containing fine solder particles, spraying of fine solder particles, and printing of ink containing fine solder particles. Can be installed.

FIG. 5 is a diagram for explaining another example in which a dam member (solder or the like) is attached to the outside of the bump on the substrate in the manufacturing process of the electronic component device according to the embodiment of the present invention. Here, the member for the dam 20 is intermittently attached to the substrate 3 at a predetermined position that includes the positions of the electrodes 8 and the bumps 2 on the device chip 1 that are arranged to face each other later. This dam member can be attached to a predetermined place on the substrate 3 by a method such as intermittent application of a solder paste containing fine solder particles and intermittent disposition of solder balls (where the solder balls are scattered).

FIG. 6 is a diagram for explaining an example of attaching a dam member (solder or the like) to the inside of the bump on the substrate in the manufacturing process of the electronic component device according to the embodiment of the present invention. The method of attaching the dam member may be the same as in the case of FIG. An insulating coat 22 is provided on a part of the surface of the dam member that may come into contact with the wiring pattern on the device chip 1 arranged to face it in order to prevent the wiring pattern from being inadvertently short-circuited. Can be set.

FIG. 7 is a diagram for explaining another example in which a dam member (solder or the like) is attached to the inside of the bump on the substrate in the manufacturing process of the electronic component device according to the embodiment of the present invention. The method of attaching the dam member may be the same as in the case of FIG. In addition, in order to prevent the wiring pattern from being inadvertently short-circuited, a part of the dam member that may come into contact with the wiring pattern on the device chip 1 arranged to face is provided with an escape portion 22 (here (No solder paste or the like is attached) can be provided.

FIG. 8 is a diagram for explaining an example of attaching a dam member (solder or the like) to the outside of the bump on the device chip in the process of manufacturing the electronic component device according to the embodiment of the present invention. Here, the member for the dam 20 is continuously attached to a predetermined place that includes the positions of the electrode 8 and the bump 2 on the device chip 1. This dam member is applied to a predetermined location on the substrate 3 by a method such as solder plating using a copper foil as a base, application of a solder paste containing fine solder particles, spraying of fine solder particles, and printing of ink containing fine solder particles. Can be installed.

FIG. 9 is a view for explaining another example in which a dam member (solder or the like) is attached to the outside of the bump on the device chip in the process of manufacturing the electronic component device according to the embodiment of the present invention. Here, the member for the dam 20 is intermittently attached to a predetermined place that includes the positions of the electrode 8 and the bump 2 on the device chip 1.
This dam member can be attached to a predetermined place on the substrate 3 by a method such as intermittent application of a solder paste containing fine solder particles and intermittent disposition of solder balls (where the solder balls are scattered).

FIG. 10 is a diagram for explaining an example of a case where a dam member (solder or the like) is attached to the inside of the bump on the device chip in the process of manufacturing the electronic component device according to the embodiment of the present invention. The method for attaching the dam member may be the same as in the case of FIG. In addition, in order to prevent the wiring pattern from being inadvertently short-circuited, a part of the dam member that may come into contact with the wiring pattern on the device chip 1 is provided with an escape portion 22.

FIG. 11 is a view for explaining another example in which a dam member (solder or the like) is attached to the inside of the bump on the device chip in the process of manufacturing the electronic component device according to the embodiment of the present invention. The method of attaching the dam member may be the same as in the case of FIG. In addition, in order to prevent the wiring pattern from being inadvertently short-circuited, a part of the dam member that may come into contact with the wiring pattern on the device chip 1 is provided with a relief portion 22 (a solder paste or the like is attached here). Not provided).

<Effect 1 of Embodiment> In the embodiment shown in FIG. 1 or 2, tin-lead eutectic solder is used for the solder dam 20. The soldered cream was squeegee printed for patterning. The height of the dam 20 was 30 μm and the width was 120 μm. The flip-chip bonding was carried out by setting the temperature condition to 200 ° C. so that the solder was in a molten state. The effect after mounting was very clear, and the sealing yield, which was 87% without solder dam, could be 100%. In addition, there was no occurrence of defective bonding of the bumps 2 due to the provision of the dam 20.

The electronic component device (surface acoustic wave filter device) 100, which has a size of 2.5 × 2.0 × 1.0 mm (= 5 mm ³ ) when manufactured without using the present invention, is the same as the embodiment of the present invention. According to the form, 2.0 x 1.5 x 0.6 m
It was possible to reduce the size and thickness to m (= 1.8 mm ³ ). The material cost can be reduced by about 50%, and a great effect can be obtained in terms of cost.

<Effect 2 of Embodiment> According to the embodiment of the present invention, the solder 20 layer formed on the package 3 side is in a molten state (or a softened state) during flip chip bonding, and is a spacer that hinders bump bonding. It will not be. Therefore, even if the height of the gap at the time of bump bonding varies due to variations in the package shape and the device chip 1 and the dam 20 come into contact with each other, the solder 20 is deformed so as to match the shape of the device chip 1. Thereby, the solder 20 layer always maintains an appropriate shape (height), and can completely function as the dam 20.

From the above, with respect to the sealing resin 5, it is possible to loosen the requirements regarding the viscosity and thixotropy, and even if the resin 5 having good wettability is used, the resin enters the functional portion 8 inside the apparatus. It is possible to realize a complete hollow sealing structure without any fear. Therefore, it is possible to obtain an electronic component device that is small / thin / cheap and has high reliability.

Further, since the solder has a characteristic that it is spheroidized by the surface tension on the metal pattern of the dam 20 formed on the package 3 side at the time of melting, there is a positional deviation and a local variation in thickness when the solder layer is formed. Even if there is, there is an effect that self-alignment is performed with melting.

Further, by heating above the melting point of the solder during flip chip bonding, the dam 20 itself made of solder is melted, and the dam 20 is assumed to be the device chip 1.
Even if it contacts with, bump bonding can be performed without energy loss. This makes it possible to form the dam 20 that prevents the sealing resin from entering without adversely affecting the amount of deformation of the bumps.

The present invention is not limited to the above-described embodiments, and various modifications and changes can be made at the stage of carrying out the invention without departing from the spirit of the invention. Also,
The respective embodiments may be combined as appropriate as much as possible, and in that case, the effect of the combination can be obtained.

For example, in the embodiment shown in FIGS. 1 to 3, the sealing resin 5 is attached only to the periphery of the device chip 1. However, the resin 5 is used to seal the upper surface (and / or substrate) of the device chip 1 during the sealing process. An embodiment in which the entire lower surface (3) is covered with the resin 5 is also possible.

Further, in the structure of FIG. 1, the dam 20 can be made to serve (or share) the sealing function of the sealing resin 5. In this case, even if the sealing process with the sealing resin 5 is not performed strictly, the airtightness inside the device can be sufficiently ensured.

Further, the material of the dam 20 is not limited to tin-lead solder, but may be a material (mainly a metal material) that melts or softens at a low melting point (for example, 250 ° C. or lower).

Furthermore, the embodiments include inventions at various stages, and various inventions can be extracted by appropriately combining a plurality of constituent elements disclosed in this application. For example, even if one or more constituent elements are deleted from all the constituent elements shown in the embodiment, if at least one of the effect of the present invention or the effect of implementing the present invention is obtained, the constituent element is The deleted configuration can be extracted as an invention.

[0054]

As described above, according to the present invention, it is possible to provide the electronic component device and the manufacturing method thereof, which prevent the occurrence of the defective sealing and the defectiveness due to the penetration of the sealing resin into the inside.

[Brief description of drawings]

FIG. 1 is a diagram illustrating an internal structure of an electronic component device according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating an internal structure of an electronic component device according to another embodiment of the present invention.

FIG. 3 is a diagram illustrating an internal structure of an electronic component device according to still another embodiment of the present invention.

FIG. 4 is a diagram illustrating an example of a case where a dam member (solder or the like) is attached to the outside of the bump on the substrate in the manufacturing process of the electronic component device according to the embodiment of the present invention.

FIG. 5 is a view for explaining another example of a case where a dam member (solder or the like) is attached to the outside of the bump on the substrate in the manufacturing process of the electronic component device according to the embodiment of the present invention.

FIG. 6 is a diagram illustrating an example of a case where a dam member (solder or the like) is attached to the inside of the bump on the substrate in the manufacturing process of the electronic component device according to the embodiment of the present invention.

FIG. 7 is a diagram illustrating another example of a case where a dam member (solder or the like) is attached to the inside of the bump on the substrate in the manufacturing process of the electronic component device according to the embodiment of the present invention.

FIG. 8 is a diagram illustrating an example of a case where a dam member (solder or the like) is attached to the outside of the bump on the device chip in the manufacturing process of the electronic component device according to the embodiment of the present invention.

FIG. 9 is a view for explaining another example of a case where a dam member (solder or the like) is attached to the outside of the bump on the device chip in the manufacturing process of the electronic component device according to the embodiment of the present invention.

FIG. 10 is a diagram illustrating an example of a case where a dam member (solder or the like) is attached to the inside of the bump on the device chip in the manufacturing process of the electronic component device according to the embodiment of the present invention.

FIG. 11 is a view for explaining another example of the case where a dam member (solder or the like) is attached to the inside of the bump on the device chip in the manufacturing process of the electronic component device according to the embodiment of the present invention.

[Explanation of symbols]

1 ... Device chip; 2 ... Metal bump (conductive bump); 3 ... Substrate (package); 4 ... Wiring pattern; 5
... Sealing resin; 7 ... Hollow part (space part); 8 ... Electrode pattern (for example, functional part of interdigital converter IDT; pattern of comb-shaped electrodes); 9 ... Gap; 20 ... Dam (for example, 60% tin) Dam using Pb-Sn solder of about ± 10%); 22 ... Escape part (or insulating coat); 82 ... Lead wiring; 100 ... Electronic component device (surface acoustic wave filter device, etc.).

Claims (5)

[Claims] 1. The device chip and the substrate are electrically conductive so that a predetermined space including the functional portion is formed between a device chip having the predetermined functional portion and a substrate made of a predetermined material. In the electronic component device, which is electrically and mechanically connected via a conductive bump, and in which a functional portion of the device chip is protected from the outside by a protective material, the device chip is provided between the device chip and the substrate. A dam made of a low melting point metal is provided outside the place where the functional part of the device chip is arranged and inside the place where the protective material is arranged to prevent the protective material from entering. An electronic component device characterized by the above. 2. The device of claim 1, wherein the dam is configured to be located outside of where the conductive bumps are located. 3. The apparatus according to claim 1, wherein the dam is configured to be arranged inside a place where the conductive bump is arranged. 4. The device according to claim 1, wherein the dam is made of solder. 5. The device chip and the substrate are electrically conductive so that a predetermined space including the functional portion is formed between a device chip having the predetermined functional portion and a substrate made of a predetermined material. In a method of manufacturing an electronic component device configured to electrically and mechanically connect via a bump, and to seal the outer periphery of the device chip and the substrate so that the functional portion is shielded from the external atmosphere by a resin. , Between the device chip and the substrate, outside the place where the functional portion of the device chip is arranged, and inside the place where the resin is arranged, for preventing the resin from entering. Dam member made of low melting point metal,
A method of manufacturing an electronic component device, characterized in that the electronic component device is provided before the resin sealing step.