JP2003119018A - Method for refining quartz powder and refined quartz crucible - Google Patents
Method for refining quartz powder and refined quartz crucibleInfo
- Publication number
- JP2003119018A JP2003119018A JP2001313671A JP2001313671A JP2003119018A JP 2003119018 A JP2003119018 A JP 2003119018A JP 2001313671 A JP2001313671 A JP 2001313671A JP 2001313671 A JP2001313671 A JP 2001313671A JP 2003119018 A JP2003119018 A JP 2003119018A
- Authority
- JP
- Japan
- Prior art keywords
- quartz powder
- quartz
- impurity particles
- electrostatic
- conductive impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 239000010453 quartz Substances 0.000 title claims abstract description 114
- 239000000843 powder Substances 0.000 title claims abstract description 110
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000007670 refining Methods 0.000 title claims abstract description 5
- 239000012535 impurity Substances 0.000 claims abstract description 40
- 239000002245 particle Substances 0.000 claims abstract description 33
- 238000012216 screening Methods 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000000746 purification Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 6
- 230000006698 induction Effects 0.000 claims description 2
- 238000001179 sorption measurement Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 101100333170 Oryza sativa subsp. japonica EHD1 gene Proteins 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- LVXIMLLVSSOUNN-UHFFFAOYSA-N fluorine;nitric acid Chemical compound [F].O[N+]([O-])=O LVXIMLLVSSOUNN-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Landscapes
- Glass Melting And Manufacturing (AREA)
- Silicon Compounds (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、静電・コロナ放電
併用の静電選別によって導電性不純物を石英粉から分離
除去する精製方法、およびこの静電分離によって精製し
た石英粉、およびこの精製した石英粉によって製造した
石英ルツボに関する。本石英ルツボはシリコン単結晶引
き上げ用石英ルツボとして好適である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a purification method for separating and removing conductive impurities from quartz powder by electrostatic screening using both electrostatic and corona discharge, quartz powder purified by this electrostatic separation, and the purified silica powder. It relates to a quartz crucible manufactured from quartz powder. The present quartz crucible is suitable as a quartz crucible for pulling a silicon single crystal.
【０００２】[0002]
【従来の技術】シリコン単結晶引き上げ用石英ルツボ
は、一般に原料の石英粉をモールドに充填して成形した
後にアーク溶融し、ガラス化して製造される。このと
き、ガラスルツボをモールドから脱型しやすくするた
め、ルツボの外周表面部分の石英粉はガラス化せずに未
溶融ないし半溶融の状態に保っている。このためモール
ド表面にはこの未溶融石英粉が残るので、これを回収し
てルツボ原料として再利用することが考えられるが、こ
の石英粉にはモールド材料のカーボン屑粉やアーク装置
から飛散した鉄、銅、ステンレス等の金属粉が混入して
おり、カーボンは気泡発生の原因となり、金属類は黒異
物の原因となるので、これらの不純物を除去しなければ
回収した石英粉をルツボ原料として再利用することがで
きない。2. Description of the Related Art A quartz crucible for pulling a silicon single crystal is generally manufactured by filling a mold with quartz powder as a raw material, molding it, then arc melting and vitrifying. At this time, in order to make it easy to remove the glass crucible from the mold, the quartz powder on the outer peripheral surface of the crucible is not vitrified but is kept in an unmelted or semi-molten state. For this reason, this unmelted quartz powder remains on the mold surface, so it is possible to collect it and reuse it as a crucible raw material. For this quartz powder, carbon scrap powder of the mold material and iron scattered from the arc device are used. Since metal powders such as copper, copper, and stainless steel are mixed in, carbon causes bubbles, and metals cause black foreign matter.If these impurities are not removed, the recovered quartz powder is reused as a crucible raw material. Cannot be used.
【０００３】[0003]
【発明の解決課題】本発明は、カーボン屑粉や金属粉等
が混入した石英粉について従来の上記課題を解決したも
のであり、石英粉からこれらの不純物を効果的に分離す
る精製方法および精製した石英粉、精製石英粉によって
製造した石英ルツボに関するものである。DISCLOSURE OF THE INVENTION The present invention is to solve the above-mentioned problems of the prior art with respect to quartz powder mixed with carbon dust powder, metal powder, etc., and a purification method and a purification method for effectively separating these impurities from the quartz powder. The present invention relates to a quartz crucible manufactured from the above-mentioned quartz powder and purified quartz powder.
【０００４】[0004]
【課題を解決する手段】本発明によれば、以下の構成か
らなる石英粉の精製方法、精製した石英粉、精製石英粉
によって製造した石英ルツボが提供される。
（１）石英粉より導電性の高い不純物粒子(導電性不純
物粒子と云う)を含む石英粉に、高電圧を加えてコロナ
放電および静電誘導により帯電させて静電選別すること
によって石英粉から導電性不純物粒子を分離することを
特徴とする石英粉の精製方法。
（２）導電性不純物粒子を含む石英粉を湿潤下で静電選
別する上記(1)の石英粉の精製方法。
（３）導電性不純物粒子を含む石英粉の吸着水分を３pp
m以上〜８０ppmに調整して静電選別を行う上記(1)の石
英粉の精製方法。
（４）導電性不純物粒子を含む石英粉を、相対湿度５０
％以上〜１００％未満の雰囲気下で静電選別する上記
(1)の石英粉の精製方法。
（５）静電選別の印加電圧が１５,０００〜３０,０００
Ｖである上記(1)〜(4)の何れかに記載する石英粉の精製
方法。
（６）上記(1)〜(6)の何れかの方法による静電選別の後
に石英粉を酸洗浄する石英粉の精製方法。
（７）石英粉の導電性不純物粒子の含有量を１００ppm
以下に低減する上記(1)〜(6)の何れかに記載する精製方
法。
（８）上記(1)〜(7)の何れかの方法による精製された石
英粉。
（９）上記(1)〜(7)の何れかの方法による精製された石
英粉によって製造された石英ルツボ。According to the present invention, there is provided a method for purifying quartz powder, a purified quartz powder, and a quartz crucible manufactured from the purified quartz powder, which have the following constitutions. (1) Quartz powder containing high-conductivity impurity particles (referred to as conductive impurity particles) than quartz powder is charged by corona discharge and electrostatic induction to electrostatically sort the quartz powder. A method for purifying quartz powder, characterized by separating conductive impurity particles. (2) The method for purifying quartz powder according to the above (1), in which quartz powder containing conductive impurity particles is electrostatically selected under wet conditions. (3) Adsorbed moisture of quartz powder containing conductive impurity particles to 3 pp
The method for purifying quartz powder according to the above (1), wherein electrostatic screening is performed by adjusting the m to 80 ppm. (4) Relative humidity 50% quartz powder containing conductive impurity particles.
% Electrostatically selected in an atmosphere of not less than 100% and less than 100%
The method for purifying quartz powder according to (1). (5) Applied voltage for electrostatic screening is 15,000 to 30,000.
The method for purifying quartz powder as described in any of (1) to (4) above, which is V. (6) A method for purifying quartz powder, in which the quartz powder is acid-washed after electrostatic selection by any of the methods (1) to (6). (7) Content of conductive impurity particles of quartz powder is 100ppm
The purification method described in any one of (1) to (6) above, which is reduced below. (8) Quartz powder purified by the method according to any one of (1) to (7) above. (9) A quartz crucible manufactured from the quartz powder purified by the method according to any one of (1) to (7) above.
【０００５】本発明の精製方法によれば石英粉に混在し
た導電性の不純物粒子を効果的に分離し除去することが
できるので、石英ルツボ製造用モールドから回収した石
英粉をこの方法によって精製し、再利用することができ
る。具体的には、石英粉に混在するカーボンや金属粉等
の導電性不純物を１００ppm以下に低減することがで
き、好ましくは、これをさらに酸洗浄し、石英ルツボ用
原料として使用できる水準に精製することができる。According to the refining method of the present invention, conductive impurity particles mixed in the quartz powder can be effectively separated and removed. Therefore, the quartz powder recovered from the quartz crucible manufacturing mold is refined by this method. , Can be reused. Specifically, conductive impurities such as carbon and metal powder mixed in the quartz powder can be reduced to 100 ppm or less, and preferably, this is further acid-cleaned and refined to a level that can be used as a raw material for the quartz crucible. be able to.
【０００６】[0006]
【発明の実施の形態】以下、本発明を実施形態に基づい
て具体的に説明する。本発明の精製方法は、石英粉より
導電性の高い不純物粒子(導電性不純物粒子)を含む石英
粉に高電圧を加え、コロナ放電下で静電選別することに
よって石英粉から導電性不純物粒子を分離することを特
徴とする石英粉の精製方法である。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be specifically described below based on embodiments. Purification method of the present invention, a high voltage is applied to the quartz powder containing the impurity particles having higher conductivity than the quartz powder (conductive impurity particles), the conductive impurities particles from the quartz powder by electrostatic selection under corona discharge. It is a method for purifying quartz powder, which is characterized by separation.
【０００７】本発明に用いる石英粉は天然石英粉でも良
く、合成石英粉でも良い。石英粉に含まれる導電性不純
物粒子とは石英粉よりも導電性が高い粉末ないし微粒子
であり、例えば、カーボン粒子や鉄、銅、ステンレスな
どの金属微粒子である。なお、本発明において石英粉お
よび導電性不純物粒子の大きさは限定されない。The quartz powder used in the present invention may be natural quartz powder or synthetic quartz powder. The conductive impurity particles contained in the quartz powder are powders or fine particles having higher conductivity than the quartz powder, for example, carbon particles or metal fine particles of iron, copper, stainless steel or the like. In the present invention, the sizes of the quartz powder and the conductive impurity particles are not limited.
【０００８】上記導電性不純物粒子を含む石英粉に高電
圧を加え、静電・コロナ放電併用によって静電選別を行
う。具体的には、例えば、接地電極とこれに対面して配
設した静電電極および放電電極とに高電圧を加えて静電
場およびコロナ放電場を形成し、ここに不純物粒子を含
有する石英粉を導入する。一般に、接地電極を正極と
し、静電電極および放電電極を負極にすると、石英粉よ
り導電性の高い不純物粒子は正極に帯電して接地電極に
反発し、静電電極側に引き寄せられ、一方、石英粉は接
地電極側に引き寄せられるので、石英粉と導電性不純物
粒子とを分離することができる。上記静電選別を実施す
る装置としては、例えば、一般に使用されるドラム型静
電選別機などを用いることができる。なおドラム型に限
らない。A high voltage is applied to the quartz powder containing the conductive impurity particles, and electrostatic screening is performed by using electrostatic and corona discharge in combination. Specifically, for example, a quartz powder containing impurity particles is formed by applying a high voltage to the ground electrode and the electrostatic electrode and the discharge electrode arranged facing the ground electrode to form an electrostatic field and a corona discharge field. To introduce. Generally, when the ground electrode is the positive electrode and the electrostatic electrode and the discharge electrode are the negative electrodes, the impurity particles having higher conductivity than quartz powder are charged to the positive electrode and repel the ground electrode, and are attracted to the electrostatic electrode side. Since the quartz powder is attracted to the ground electrode side, the quartz powder and the conductive impurity particles can be separated. As an apparatus for performing the electrostatic selection, for example, a commonly used drum type electrostatic selection machine or the like can be used. It is not limited to the drum type.
【０００９】本発明の静電・コロナ放電選別は湿潤化下
で行うのが好ましい。具体的には、例えば、導電性不純
物粒子を含む石英粉の吸着水分を３ppm以上に調整し、
あるいは相対湿度５０％以上の雰囲気下で静電コロナ放
電選別を行うのが好ましい。The electrostatic / corona discharge selection of the present invention is preferably performed under moistening. Specifically, for example, the adsorbed water content of quartz powder containing conductive impurity particles is adjusted to 3 ppm or more,
Alternatively, electrostatic corona discharge screening is preferably performed in an atmosphere having a relative humidity of 50% or more.
【００１０】一般に静電選別は、導電体と不良電体の導
電率の差をできるだけ大きくしたほうが良く、そのため
湿度を極力低減し、吸着水分を含まない状態で行うのが
好ましいとされている。湿気雰囲気下では不良導体に湿
分が付着して導電性を有するようになるため通常は分離
効果が低下する。しかし、石英粉の場合には低湿度雰囲
気下で静電選別を行うと、給鉱時に粉末どうしの摩擦に
よって石英粉が正負両極に帯電してしまうため、かえっ
て分離効果が低下する。例えば、石英粉の吸着水分量が
３ppm未満では静電選別による分離効果が低下する。従
って、石英粉が３ppm以上の水分量を有する状態に調整
して静電コロナ放電選別を行うのが好ましい。石英粉の
吸着水分量を３ppm以上に調整するには、−５〜５０℃
の温度下で石英粉を相対湿度５０％以上、好ましくは７
０％以上の雰囲気下に保持すると良い。なお、石英粉を
湿度１００％の雰囲気に放置しても吸着水分量が８０pp
m未満であればこの状態でも静電選別を行うことができ
る。ただし、石英粉の吸着水分量が８０ppmより多いと
石英粉の導電性が強くなり、分離効率が低下するので好
ましくない。Generally, it is said that electrostatic screening should be carried out in a state where humidity is reduced as much as possible and adsorbed water is not contained, because it is better to make the difference in conductivity between a conductor and a defective conductor as large as possible. In a humid atmosphere, moisture adheres to the defective conductor and becomes conductive, so that the separation effect is usually reduced. However, in the case of quartz powder, when electrostatic screening is performed in a low-humidity atmosphere, the quartz powder is charged to both the positive and negative polarities due to the friction between the powders at the time of ore feeding, which rather reduces the separation effect. For example, if the amount of adsorbed water content of the quartz powder is less than 3 ppm, the separation effect by electrostatic screening is reduced. Therefore, it is preferable to perform electrostatic corona discharge screening by adjusting the quartz powder to have a water content of 3 ppm or more. To adjust the adsorbed water content of quartz powder to 3 ppm or more, -5 to 50 ° C
Quartz powder under the temperature of 50% or more relative humidity, preferably 7
It is preferable to keep it in an atmosphere of 0% or more. Even if quartz powder is left in an atmosphere with a humidity of 100%, the amount of adsorbed water is 80 pp.
If it is less than m, electrostatic selection can be performed even in this state. However, if the amount of adsorbed water of the quartz powder is more than 80 ppm, the conductivity of the quartz powder becomes strong and the separation efficiency decreases, which is not preferable.
【００１１】静電選別を行うための印加電圧は１５,０
００Ｖ以上〜３０,０００Ｖ以下が良く、１８,０００〜
２８,０００Ｖが好ましい。印加電圧が１５,０００Ｖよ
り低いと石英粉が帯電し難く静電分離できない。一方、
印加電圧が３０,０００Ｖより高いと火花放電が生じ、
制御不能になるので好ましくない。静電選別を行う際の
石英粉の層厚は１mm未満が良く、０.３mm未満が好まし
い。The applied voltage for electrostatic selection is 15,0.
00V or more to 30,000V or less is good, 18,000 to
28,000V is preferable. If the applied voltage is lower than 15,000 V, the quartz powder is difficult to be charged and electrostatic separation cannot be performed. on the other hand,
If the applied voltage is higher than 30,000V, spark discharge will occur,
It is not preferable because it will be out of control. The layer thickness of the quartz powder during electrostatic screening is preferably less than 1 mm, and preferably less than 0.3 mm.
【００１２】以上の静電・コロナ放電併用の静電選別の
後に、好ましくは石英粉を酸洗浄する。石英粉の表面は
カーボン粉や金属粉によって汚染されているので、酸洗
浄を行い、この汚染を除去する。使用する酸はフッ酸、
フッ硝酸、王水などが良い。静電選別を行った石英粉を
酸洗浄槽に導いて洗浄し、あるいは洗浄用の酸をシャワ
ーして洗浄を行う。After the electrostatic screening using both electrostatic and corona discharge as described above, the quartz powder is preferably washed with an acid. Since the surface of the quartz powder is contaminated with carbon powder and metal powder, acid cleaning is performed to remove this contamination. The acid used is hydrofluoric acid,
Fluorine nitric acid and aqua regia are good. The quartz powder subjected to electrostatic screening is introduced into an acid cleaning tank for cleaning, or an acid for cleaning is showered for cleaning.
【００１３】以上の静電・コロナ放電併用の選別を行う
ことにより、導電性不純物量を１００ppm以下、好まし
くは１０ppm以下に低減することができ、単結晶引き上
げ用石英ルツボの原料として使用できる不純物水準の石
英粉を得ることができる。By conducting the above-mentioned screening using both electrostatic and corona discharge, the amount of conductive impurities can be reduced to 100 ppm or less, preferably 10 ppm or less, and the impurity level that can be used as a raw material for a quartz crucible for pulling a single crystal. Quartz powder can be obtained.
【００１４】[0014]
【実施例】以下に本発明の実施例を示す。
〔実施例１〕導電性不純物粒子（平均粒径０.１〜５mm
カーボン粒子および金属粒子）が約１重量％混在した石
英粉（平均粒径２００μm、比表面積０.２０m2/g）を室
温２５℃の一定下に湿度調整して静電コロナ放電機に導
入し、表１に示す湿度下および含有水分量下で２０,０
００Ｖの電圧を印可して静電選別を行った。この結果を
実施条件と共に表１に示した。この結果に示すように、
静電選別時の湿度が４０％（石英粉の吸着水分量２.３p
pm）の乾燥下の例（No.１）では、静電選別の分離効果
が４５％と低く、不純物量も１５０ppmであり他の例よ
りも多い。一方、静電選別時の湿度が５０％以上（石英
粉の吸着水分量８.４ppm以上）の湿潤下の実施例（No.
２〜７）では、分離した石英粉の収率が７８％以上であ
り、選別した石英粉の不純物量は１００ppm以下、好適
な例（No.５〜７）では石英粉の分離収率９２％以上で
あって、不純物量６ppm以下であった。EXAMPLES Examples of the present invention will be shown below. [Example 1] Conductive impurity particles (average particle size 0.1 to 5 mm
Quartz powder (average particle size 200 μm, specific surface area 0.20 m 2 / g) in which about 1% by weight of carbon particles and metal particles are mixed is introduced into an electrostatic corona discharger with humidity adjusted at room temperature of 25 ° C. , 20, under the humidity and water content shown in Table 1.
Electrostatic screening was performed by applying a voltage of 00V. The results are shown in Table 1 together with the implementation conditions. As shown in this result,
Humidity at the time of electrostatic screening is 40% (Adsorbed water content of quartz powder is 2.3 p
In the example under drying (pm) (No. 1), the separation effect of electrostatic screening is as low as 45%, and the amount of impurities is 150 ppm, which is higher than other examples. On the other hand, the humidity of the electrostatic selection is 50% or more (adsorbed water content of quartz powder is 8.4 ppm or more) in the wet example (No.
2-7), the yield of separated quartz powder is 78% or more, the amount of impurities in the selected quartz powder is 100 ppm or less, and in a suitable example (No. 5-7), the separation yield of quartz powder is 92%. It was above, and the amount of impurities was 6 ppm or less.
【００１５】〔実施例２〕実施例１と同様の石英粉を用
い、静電選別時の湿度８０％および含有水分量２３ppm
に調整し、印加電圧を１３,０００〜３０,０００Ｖに変
えて静電選別を行った。この結果を印加電圧と共に表２
に示した。この結果に示すように、印加電圧が１５,０
００〜３０,０００Ｖの範囲で約８０％以上、好ましく
は約９０％以上の収率で石英粉を選別することができ、
選別した石英粉の不純物量も１００ppm以下、好ましく
は５ppm以下（No.24〜26）であった。[Example 2] The same quartz powder as in Example 1 was used, and the humidity during electrostatic selection was 80% and the water content was 23 ppm.
Was adjusted, and the applied voltage was changed to 13,000 to 30,000 V for electrostatic selection. The results are shown in Table 2 together with the applied voltage.
It was shown to. As shown in this result, the applied voltage is 15,0
Quartz powder can be selected with a yield of about 80% or more, preferably about 90% or more in the range of 0 to 30,000 V,
The amount of impurities in the selected quartz powder was 100 ppm or less, preferably 5 ppm or less (No. 24-26).
【００１６】[0016]
【表１】 [Table 1]
【００１７】[0017]
【表２】 [Table 2]
【００１８】[0018]
【発明の効果】本発明の精製方法によれば、石英粉に混
在する導電性不純物粒子を効果的に分離除去することが
でき、単結晶引き上げ用石英ルツボの原料として使用で
きる石英粉を得ることができる。また、本発明の精製方
法は石英粉が湿分を含む状態で実施するのが好ましいの
で、石英粉を乾燥する必要がなく、石英粉以外の静電選
別よりも実施しやすい。According to the refining method of the present invention, it is possible to effectively separate and remove conductive impurity particles mixed in quartz powder, and obtain quartz powder which can be used as a raw material for a single crystal pulling crucible. You can Further, since the purification method of the present invention is preferably carried out in a state where the quartz powder contains moisture, it is not necessary to dry the quartz powder and it is easier to carry out than electrostatic selection other than quartz powder.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4G014 AH00 4G072 AA30 BB05 GG01 GG03 HH20 RR30 UU30 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 4G014 AH00 4G072 AA30 BB05 GG01 GG03 HH20 RR30 UU30
Claims (9)
(導電性不純物粒子と云う)を含む石英粉に、高電圧を加
えてコロナ放電および静電誘導により帯電させて静電選
別することによって石英粉から導電性不純物粒子を分離
することを特徴とする石英粉の精製方法。1. Impurity particles having higher conductivity than quartz powder
It is characterized by separating conductive impurity particles from quartz powder by applying a high voltage to quartz powder containing (called conductive impurity particles), charging by corona discharge and electrostatic induction, and electrostatically selecting. Method of refining quartz powder.
で静電選別する請求項１の石英粉の精製方法。2. The method for purifying quartz powder as claimed in claim 1, wherein the quartz powder containing conductive impurity particles is electrostatically selected under wet conditions.
分を３ppm以上〜８０ppmに調整して静電選別を行う請求
項１の石英粉の精製方法。3. The method for purifying quartz powder according to claim 1, wherein electrostatic adsorption is performed by adjusting the adsorbed water content of the quartz powder containing conductive impurity particles to 3 ppm or more to 80 ppm.
湿度５０％以上〜１００％未満の雰囲気下で静電選別す
る請求項１の石英粉の精製方法。4. The method for purifying quartz powder according to claim 1, wherein the quartz powder containing conductive impurity particles is electrostatically selected in an atmosphere having a relative humidity of 50% or more and less than 100%.
０,０００Ｖである請求項１〜４の何れかに記載する石
英粉の精製方法。5. The applied voltage for electrostatic screening is 15,000 to 3
The method for purifying quartz powder according to any one of claims 1 to 4, which has a voltage of 0000V.
選別の後に石英粉を酸洗浄する石英粉の精製方法。6. A method for purifying quartz powder, which comprises acid-cleaning quartz powder after electrostatic screening according to any one of claims 1 to 5.
００ppm以下に低減する請求項１〜６の何れかに記載す
る精製方法。7. The content of conductive impurity particles of quartz powder is 1
The purification method according to any one of claims 1 to 6, wherein the purification method is reduced to 00 ppm or less.
された石英粉。8. A quartz powder purified by the method according to claim 1.
された石英粉によって製造された石英ルツボ。9. A quartz crucible manufactured from the quartz powder purified by the method according to claim 1.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007145698A (en) * | 2005-10-28 | 2007-06-14 | Japan Siper Quarts Corp | Method and apparatus for purifying silica particles and purified silica particles |
| RU2379232C2 (en) * | 2005-10-28 | 2010-01-20 | Джапэн Сьюпер Кворц Корпорейшн | Method of purifying silica powder, device to this end and purified silica powder |
| JP2011068523A (en) * | 2009-09-28 | 2011-04-07 | Covalent Materials Corp | Method for refining quartz glass raw material powder |
| CN107243408A (en) * | 2017-07-25 | 2017-10-13 | 安徽正丰再生资源有限公司 | A kind of efficient purifying plant of silica |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107321496A (en) * | 2017-07-25 | 2017-11-07 | 安徽正丰再生资源有限公司 | A kind of gravity type silicon carbide micro-powder purifying plant |
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2001
- 2001-10-11 JP JP2001313671A patent/JP4000810B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007145698A (en) * | 2005-10-28 | 2007-06-14 | Japan Siper Quarts Corp | Method and apparatus for purifying silica particles and purified silica particles |
| RU2379232C2 (en) * | 2005-10-28 | 2010-01-20 | Джапэн Сьюпер Кворц Корпорейшн | Method of purifying silica powder, device to this end and purified silica powder |
| US7935326B2 (en) | 2005-10-28 | 2011-05-03 | Japan Super Quartz Corporation | Method for purification of silica particles, purifier, and purified silica particles |
| US8506890B2 (en) | 2005-10-28 | 2013-08-13 | Japan Super Quartz Corporation | Method for purification of silica particles, purifier, and purified silica particles |
| JP2011068523A (en) * | 2009-09-28 | 2011-04-07 | Covalent Materials Corp | Method for refining quartz glass raw material powder |
| CN107243408A (en) * | 2017-07-25 | 2017-10-13 | 安徽正丰再生资源有限公司 | A kind of efficient purifying plant of silica |
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