JP2003113374A - Phosphor for low-speed electron beam and fluorescent tube - Google Patents
Phosphor for low-speed electron beam and fluorescent tubeInfo
- Publication number
- JP2003113374A JP2003113374A JP2001306195A JP2001306195A JP2003113374A JP 2003113374 A JP2003113374 A JP 2003113374A JP 2001306195 A JP2001306195 A JP 2001306195A JP 2001306195 A JP2001306195 A JP 2001306195A JP 2003113374 A JP2003113374 A JP 2003113374A
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- low
- electron beam
- speed electron
- display tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 24
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 12
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 7
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 6
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 6
- 229910052738 indium Inorganic materials 0.000 claims abstract description 5
- 239000002131 composite material Substances 0.000 claims description 10
- 230000003213 activating effect Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract description 5
- 239000012190 activator Substances 0.000 abstract description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 4
- 239000000758 substrate Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical group [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- -1 sulfide compound Chemical class 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Luminescent Compositions (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は数 v 〜数 10 v 程
度の低い加速電圧で発光するいわゆる低速電子線用蛍光
体およびこの低速電子線用蛍光体を用いた蛍光表示管に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a so-called low-speed electron beam phosphor that emits light at a low accelerating voltage of about several v to several tens of v and a fluorescent display tube using the low-speed electron beam phosphor.
【０００２】[0002]
【従来の技術】電卓、オーディオ、家電製品、計測器、
医療機器などの表示部に所定のパターンあるいはグラフ
ィックを表示する表示素子や、バックライト、プリンタ
ヘッド、ファックス用光源、複写機用光源などの各種光
源、平面テレビ等に自発光型の素子として蛍光表示管が
多用されている。また、蛍光表示管は、各種の発光色や
マルチカラー化が求められている。従来、低速電子線用
赤色系蛍光体としては、（Ｚｎ1-xＣｄx）Ｓ：Ａｇ，Ｃ
ｌなどのカドミウム（Ｃｄ）を含む硫化物系が実用レベ
ルにおいて使用されてきた。また、Ｃｄを含まない低速
電子線用赤色蛍光体として、Ｒ2Ｏ2Ｓ：Ｅｕの主成分の
１つである元素Ｒを部分的に元素Ｌａで置換した組成が
開示されている（特開平７−３１００７４号）。2. Description of the Related Art Calculators, audios, home appliances, measuring instruments,
Fluorescent display as a self-luminous element as a display element that displays a predetermined pattern or graphic on the display part of medical equipment, various light sources such as backlights, printer heads, light sources for fax machines, light sources for copying machines, and flat-screen TVs. Pipes are used a lot. Further, the fluorescent display tube is required to have various emission colors and multi-color. Conventionally, (Zn 1-x Cd x ) S: Ag, C has been used as a red phosphor for low-speed electron beams.
Sulfide systems containing cadmium (Cd) such as 1 have been used at a practical level. Further, as a red phosphor for a low-speed electron beam that does not contain Cd, a composition in which an element R, which is one of the main components of R 2 O 2 S: Eu, is partially replaced by an element La is disclosed (Japanese Patent Laid-Open No. Hei 10 (1999) -29242) 7-310074).
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、特定化
学物質に規定されているＣｄを含む蛍光体は使用が制限
されつつあるという問題がある。また、Ｃｄを含まない
低速電子線用赤色蛍光体として提案されているものも硫
化物系蛍光体であり、発生ガス等により蛍光表示管内部
を汚染しやすいという問題がある。本発明は、このよう
な問題に対処するためになされたもので、Ｃｄを使用し
ない非硫化物である酸化物系低速電子線用赤色蛍光体お
よびその蛍光体を用いた蛍光表示管の提供を目的とす
る。However, there is a problem in that the use of phosphors containing Cd specified as a specific chemical substance is being restricted. In addition, the one proposed as a red phosphor for low-speed electron beams that does not contain Cd is also a sulfide-based phosphor, and there is a problem that the inside of the fluorescent display tube is easily contaminated by generated gas or the like. The present invention has been made in order to solve such a problem, and provides a red phosphor for oxide low-speed electron beam, which is a non-sulfide compound that does not use Cd, and a fluorescent display tube using the phosphor. To aim.
【０００４】[0004]
【課題を解決するための手段】本発明の低速電子線用蛍
光体は、インジウム（Ｉｎ）を含む複合酸化物を母体と
して、この複合酸化物に希土類元素を付活させることを
特徴とする。ここで、低速電子線用蛍光体とは、1 kv
以下で、好ましくは数 v 〜数 10 v の低い加速電圧で
発光する蛍光体をいう。また、上記複合酸化物がＩｎ
と、バナジウム（Ｖ）、ニオブ（Ｎｂ）およびタンタル
（Ｔａ）から選ばれた少なくとも一つの元素との複合酸
化物であることを特徴とする。また、上記複合酸化物が
ＩｎＶＯ4、ＩｎＮｂＯ4、またはＩｎＴａＯ4であるこ
とを特徴とする。また、付活剤となる希土類元素がユー
ロピウム（Ｅｕ）であることを特徴とする。The phosphor for low-speed electron beam of the present invention is characterized in that a complex oxide containing indium (In) is used as a matrix and a rare earth element is activated in the complex oxide. Here, the low-speed electron beam phosphor is 1 kv
Hereinafter, it refers to a phosphor that emits light at a low acceleration voltage of preferably several v to several tens v. In addition, the composite oxide is In
And a complex oxide of at least one element selected from vanadium (V), niobium (Nb) and tantalum (Ta). Further, the above composite oxide is InVO 4 , InNbO 4 , or InTaO 4 . The rare earth element used as an activator is europium (Eu).
【０００５】本発明の蛍光表示管は、真空容器内に形成
された上記蛍光体層に低速電子線を射突させて発光させ
る蛍光表示管であることを特徴とする。The fluorescent display tube of the present invention is characterized in that it is a fluorescent display tube that emits light by projecting a low-speed electron beam onto the phosphor layer formed in a vacuum container.
【０００６】Ｉｎを含む複合酸化物、例えばＩｎＮｂＯ
4は表面にＮｉＯｙを付着させて水などの光分解触媒と
して研究されている。このＩｎを含む複合酸化物に希土
類元素、特にＥｕを付活することにより、低速電子線で
赤色に発光する赤色蛍光体が得られた。本発明はこのよ
うな知見に基づくものある。また、この赤色蛍光体を用
いることにより、特定化学物質であるＣｄを使用しない
ので環境に対して安全で、かつ硫化物を使用しないので
蛍光表示管内部を汚染しない蛍光表示管が得られる。A complex oxide containing In, for example, InNbO
No. 4 has been studied as a photolysis catalyst for water with NiO y attached to the surface. By activating a rare earth element, especially Eu, to this In-containing composite oxide, a red phosphor that emits red light with a low-speed electron beam was obtained. The present invention is based on such knowledge. Further, by using this red phosphor, it is possible to obtain a fluorescent display tube which is safe for the environment because Cd which is a specific chemical substance is not used and which does not contaminate the inside of the fluorescent display tube because it does not use sulfide.
【０００７】[0007]
【発明の実施の形態】本発明に用いられるＩｎを含む複
合酸化物は、ＩｎとＩｎ以外の他の元素との複合酸化物
である。該複合酸化物に後述する希土類元素を付活する
ことにより赤色発光を示す 600nm 以上の波長でピーク
強度を有する蛍光体が得られる。Ｉｎを含む複合酸化物
を形成するのに好適な元素としては、Ｖ、Ｎｂ、Ｔａ、
およびこれらの混合物があり、好適な複合酸化物として
は、ＩｎＶＯ4、ＩｎＮｂＯ4、またはＩｎＴａＯ4が挙
げられる。BEST MODE FOR CARRYING OUT THE INVENTION The complex oxide containing In used in the present invention is a complex oxide of In and an element other than In. By activating the rare earth element described below to the composite oxide, a phosphor having a peak intensity at a wavelength of 600 nm or more, which emits red light, can be obtained. Suitable elements for forming a complex oxide containing In include V, Nb, Ta, and
And mixtures thereof, and suitable complex oxides include InVO 4 , InNbO 4 , or InTaO 4 .
【０００８】上記複合酸化物に付活される希土類元素
は、工業的に入手しやすいランタノイド系列が好まし
く、特に赤色発光しやすいＥｕが好ましい。希土類元素
の一つであるＥｕが付活された蛍光体は、組成式が化１
で表される。The rare earth element which is activated in the above composite oxide is preferably a lanthanoid series which is industrially easily available, and particularly Eu which is easy to emit red light. The phosphor activated with Eu, which is one of the rare earth elements, has a composition formula
It is represented by.
【化１】
ここで、ＭはＶ、Ｎｂ、Ｔａ、またはこれらの混合物で
ある。ｘは 0.01〜0.10 の範囲が好ましく、より好まし
い範囲は 0.02〜0.08 の範囲である。ｘが 0.01 未満で
あると、十分な発光強度が得られず、0.10 をこえると
濃度消光により発光強度が低くなる。[Chemical 1] Here, M is V, Nb, Ta, or a mixture thereof. The range of x is preferably 0.01 to 0.10, and more preferably 0.02 to 0.08. When x is less than 0.01, sufficient emission intensity cannot be obtained, and when it exceeds 0.10, the emission intensity becomes low due to concentration quenching.
【０００９】Ｉｎ1-xＥｕxＮｂＯ4を例にとり、発光ス
ペクトル図を図１に、615nm の発光ピーク強度のＥｕ付
活濃度依存性を図２に示す。図１は、Ｉｎ1-xＥｕxＮｂ
Ｏ4を 270nm の紫外線で励起したときの発光スペクトル
図であり、縦軸が任意強度で示す発光強度、横軸が波長
である。また、Ｉｎ 1-xＥｕxＮｂＯ4におけるｘを 0.0
2、 0.04、 0.06、 0.08 に変化させたときの発光スペ
クトル図である。図１に示すように、615nm に主ピーク
が見られ、赤色に発光していることが分かる。この615n
m の主ピークを含む各ピークは、いずれもｘが変化して
も同一波長のピークを示し、その発光ピーク強度が異な
るのみである。図２より主発光ピークは、発光ピーク強
度がｘ= 0.01〜0.10 の範囲、好ましくはｘ= 0.02〜0.0
8 の範囲、より好ましくはｘ= 0.04〜0.08 の範囲で高
輝度発光が得られている。なお図示を省略したが、Ｍが
Ｖ、Ｔａの場合にも 600nm 以上に主発光ピークが見ら
れた。In1-xEuxNbOFourAs an example,
Fig. 1 shows the spectrum diagram with Eu of the emission peak intensity at 615 nm.
The activity concentration dependence is shown in FIG. In FIG.1-xEuxNb
OFourEmission spectrum when excited by 270 nm ultraviolet light
In the figure, the vertical axis represents emission intensity with arbitrary intensity and the horizontal axis represents wavelength.
Is. Also, In 1-xEuxNbOFourX at 0.0
Emission space when changed to 2, 0.04, 0.06, 0.08
It is a ktor figure. As shown in Figure 1, the main peak is at 615 nm.
Can be seen, and it can be seen that red light is emitted. This 615n
For each peak including the main peak of m, x changes
Also show peaks of the same wavelength, and their emission peak intensities differ.
Only From Fig. 2, the main emission peak is a strong emission peak.
The degree is in the range of x = 0.01 to 0.10, preferably x = 0.02 to 0.0
High in the range of 8, more preferably in the range of x = 0.04 to 0.08
Bright emission is obtained. Although not shown, M is
Even in the case of V and Ta, the main emission peak was observed at 600 nm or more.
It was
【００１０】化１に示す赤色発光蛍光体は、ＩｎＶ
Ｏ4、ＩｎＮｂＯ4、またはＩｎＴａＯ4が、それ自身半
導体であるため、導電性を有し、低電圧で高輝度発光が
得られる。またＩｎ2Ｏ3、ＺｎＯ、ＩＴＯ、ＳｎＯ2、
Ｎｂ2Ｏ5、ＴｉＯ2、ＷＯ3等の導電性酸化物を混合する
ことで発光輝度がより向上する。The red light emitting phosphor shown in Chemical formula 1 is InV
Since O 4 , InNbO 4 , or InTaO 4 is itself a semiconductor, it has conductivity, and high-luminance light emission can be obtained at a low voltage. In 2 O 3 , ZnO, ITO, SnO 2 ,
By mixing a conductive oxide such as Nb 2 O 5 , TiO 2 or WO 3 , the emission brightness is further improved.
【００１１】本発明の蛍光体の製造方法の一例をＩｎ
1-xＥｕxＮｂＯ4を例にとり、以下に説明する。出発原
料として、Ｉｎ2Ｏ3、Ｅｕ2Ｏ3、およびＮｂ2Ｏ5の高純
度粉末を、ｘ=0.06 となる範囲の組成で乳鉢等によって
充分に混合する。この混合物を、例えば大気雰囲気中 1
300℃にて３時間焼成して、粉砕・精製等周知の方法に
より後処理して赤色発光蛍光体が得られる。An example of the method for producing the phosphor of the present invention is In
The description will be given below by taking 1-x Eu x NbO 4 as an example. As starting materials, high-purity powders of In 2 O 3 , Eu 2 O 3 , and Nb 2 O 5 are sufficiently mixed in a composition such that x = 0.06 in a mortar or the like. This mixture, for example, in the atmosphere 1
After firing at 300 ° C. for 3 hours and post-treatment by a known method such as crushing and refining, a red-emitting phosphor is obtained.
【００１２】なお、蛍光体の母体となる複合酸化物の調
整、およびＥｕ付活の方法等については、従来公知の方
法を採用してもよい。例えば、複合酸化物原料として
は、酸化物自身、大気中の焼成により金属酸化物となる
水酸化物、硝酸塩、塩化物、炭酸塩となる無機塩類等が
挙げられる。これらの原料を乾式または湿式で混合して
焼成することにより得られる。なお、低温度で反応を達
成するためフラックスを少量添加してもよい。For the preparation of the composite oxide as the matrix of the phosphor, the activation of Eu, and the like, conventionally known methods may be adopted. Examples of the composite oxide raw material include oxides themselves, hydroxides that become metal oxides by firing in the air, nitrates, chlorides, inorganic salts that become carbonates, and the like. It is obtained by mixing these raw materials in a dry or wet manner and firing. A small amount of flux may be added to achieve the reaction at a low temperature.
【００１３】本発明の蛍光表示管の一例について図３お
よび図４により説明する。図３は蛍光表示管の断面図で
あり、図４は蛍光表示管を構成する陽極基板の部分拡大
断面図である。蛍光表示管１は、陽極基板７と、この陽
極基板７上方にグリット８と熱陰極９とを設け、フェー
スガラス１０およびスペーサガラス１１を用いて封着し
て真空引きして形成される。熱陰極９より発生した低速
電子線が陽極基板７上の蛍光体層６に射突して発光す
る。陽極基板７は、ガラス基板２上に銀を主成分とする
導電性ペーストを印刷塗布法により、またはアルミニウ
ムの薄膜法により配線層３を形成した後、スルーホール
４ａを除くほぼ全面にわたって低融点フリットガラスペ
ーストの印刷塗布法により絶縁層４を形成し、このスル
ーホール４ａを介して電気的に接続された陽極電極５を
グラファイトペーストの印刷塗布法により形成する。こ
の陽極電極５上に、蛍光体層６を印刷塗布法より塗布し
たのち焼成して陽極基板７が得られる。An example of the fluorescent display tube of the present invention will be described with reference to FIGS. 3 and 4. FIG. 3 is a cross-sectional view of the fluorescent display tube, and FIG. 4 is a partially enlarged cross-sectional view of an anode substrate forming the fluorescent display tube. The fluorescent display tube 1 is formed by providing an anode substrate 7, a grit 8 and a hot cathode 9 above the anode substrate 7, sealing them with a face glass 10 and a spacer glass 11, and drawing a vacuum. The low-speed electron beam generated from the hot cathode 9 strikes the phosphor layer 6 on the anode substrate 7 and emits light. The anode substrate 7 has a low melting point frit over almost the entire surface except the through holes 4a after the conductive layer containing silver as a main component is formed on the glass substrate 2 by the print coating method or the aluminum thin film method to form the wiring layer 3. The insulating layer 4 is formed by the glass paste print application method, and the anode electrode 5 electrically connected through the through hole 4a is formed by the graphite paste print application method. A phosphor layer 6 is applied onto the anode electrode 5 by a print coating method and then baked to obtain an anode substrate 7.
【００１４】本発明の蛍光表示管は、真空容器内に形成
された蛍光体層に低速電子線を射突させて発光させる蛍
光表示管であれば、熱陰極９の代わりに電界放射冷陰極
を備えてなる蛍光表示管であってもよい。In the fluorescent display tube of the present invention, a field emission cold cathode is used instead of the hot cathode 9 as long as it is a fluorescent display tube which emits light by irradiating a phosphor layer formed in a vacuum container with a low-speed electron beam. It may be a fluorescent display tube provided.
【００１５】[0015]
【発明の効果】本発明の低速電子線用蛍光体は、母体と
なるＩｎを含む複合酸化物に希土類元素を付活させるの
で、Ｃｄを含まない赤色発光の蛍光体が得られる。ま
た、硫化物系の蛍光体でないので、蛍光表示管内部のカ
ソードを劣化させない。さらに、蛍光体自身が半導体で
あるので導電性を有し、輝度が向上する。また、上記複
合酸化物がＩｎと、Ｖ、ＮｂおよびＴａから選ばれた少
なくとも一つの元素との複合酸化物であるので、特にＩ
ｎＶＯ4、ＩｎＮｂＯ4、またはＩｎＴａＯ4であリ、付
活剤となる希土類元素がＥｕであるので、赤色発光蛍光
体として、上記諸特性がより向上する。In the phosphor for low-speed electron beam of the present invention, the rare earth element is activated in the composite oxide containing In, which is the base material, so that the phosphor emitting red light containing no Cd can be obtained. Further, since it is not a sulfide-based phosphor, the cathode inside the fluorescent display tube is not deteriorated. Furthermore, since the phosphor itself is a semiconductor, it has conductivity and the brightness is improved. Further, since the above complex oxide is a complex oxide of In and at least one element selected from V, Nb and Ta,
Since nVO 4 , InNbO 4 , or InTaO 4 is used , and the rare earth element serving as an activator is Eu, the above-mentioned various properties are further improved as a red-emitting phosphor.
【００１６】本発明の蛍光表示管は、真空容器内に形成
された蛍光体層に低速電子線を射突させて発光させる蛍
光表示管において、Ｉｎを含む複合酸化物に希土類元素
を付活させた蛍光体層とするので、Ｃｄを含まない赤色
発光の蛍光体表示が得られ、また、蛍光表示管内部のカ
ソードを劣化させなので輝度の変化がなく、耐久性に優
れた蛍光表示管が得られる。The fluorescent display tube of the present invention is a fluorescent display tube in which a phosphor layer formed in a vacuum container is irradiated with a low-speed electron beam to emit light, and a complex oxide containing In is activated with a rare earth element. Since the phosphor layer is used as a phosphor layer, a red-emitting phosphor display containing no Cd can be obtained, and since the cathode inside the fluorescent display tube is deteriorated, there is no change in brightness and a fluorescent display tube with excellent durability is obtained. To be
【図１】Ｉｎ1-xＥｕxＮｂＯ4を例とする、発光スペク
トル図である。FIG. 1 is an emission spectrum diagram of In 1-x Eu x NbO 4 as an example.
【図２】発光ピーク強度のＥｕ付活濃度依存性を示す図
である。FIG. 2 is a diagram showing the Eu activation concentration dependency of emission peak intensity.
【図３】蛍光表示管の断面図である。FIG. 3 is a cross-sectional view of a fluorescent display tube.
【図４】陽極基板の部分拡大断面図である。FIG. 4 is a partially enlarged sectional view of an anode substrate.
１ 蛍光表示管 ２ ガラス基板 ３ 配線層 ４ 絶縁層 ５ 陽極電極 ６ 蛍光体層 ７ 陽極基板 ８ グリット ９ 熱陰極 １０ フェースガラス １１ スペーサガラス 1 Fluorescent display tube 2 glass substrates 3 wiring layers 4 insulating layers 5 Anode electrode 6 Phosphor layer 7 Anode substrate 8 grit 9 hot cathode 10 face glass 11 Spacer glass
Claims (7)
活してなることを特徴とする低速電子線用蛍光体。1. A phosphor for low-speed electron beams, which is obtained by activating a rare earth element in a complex oxide containing In.
びＴａから選ばれた少なくとも一つの元素との複合酸化
物であることを特徴とする請求項１記載の低速電子線用
蛍光体。2. The phosphor for low-energy electron beam according to claim 1, wherein the complex oxide is a complex oxide of In and at least one element selected from V, Nb and Ta.
を特徴とする請求項２記載の低速電子線用蛍光体。3. The phosphor for low speed electron beam according to claim 2, wherein the composite oxide is InVO 4 .
とを特徴とする請求項２記載の低速電子線用蛍光体。4. The phosphor for low speed electron beam according to claim 2, wherein the composite oxide is InNbO 4 .
とを特徴とする請求項２記載の低速電子線用蛍光体。5. The phosphor for low-speed electron beam according to claim 2, wherein the complex oxide is InTaO 4 .
とする請求項１ないし請求項５のいずれか一項記載の低
速電子線用蛍光体。6. The phosphor for low-speed electron beam according to claim 1, wherein the rare earth element is Eu.
電子線を射突させて発光させる蛍光表示管において、前
記蛍光体層が請求項１ないし請求項６のいずれか一項記
載の低速電子線用蛍光体で形成されてなることを特徴と
する蛍光表示管。7. A fluorescent display tube that emits light by irradiating a fluorescent layer formed in a vacuum container with a low-speed electron beam, wherein the fluorescent layer is any one of claims 1 to 6. A fluorescent display tube comprising a phosphor for low-speed electron beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001306195A JP2003113374A (en) | 2001-10-02 | 2001-10-02 | Phosphor for low-speed electron beam and fluorescent tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001306195A JP2003113374A (en) | 2001-10-02 | 2001-10-02 | Phosphor for low-speed electron beam and fluorescent tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003113374A true JP2003113374A (en) | 2003-04-18 |
Family
ID=19125870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001306195A Pending JP2003113374A (en) | 2001-10-02 | 2001-10-02 | Phosphor for low-speed electron beam and fluorescent tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003113374A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101230270B (en) * | 2006-10-04 | 2012-10-03 | 夏普株式会社 | Phosphor |
| CN105623660A (en) * | 2016-03-17 | 2016-06-01 | 中南大学 | Warm white fluorescent powder excited by ultraviolet LED |
| CN113930243A (en) * | 2021-09-26 | 2022-01-14 | 深圳旭宇电子有限公司 | Near-infrared luminescent material, preparation method thereof and luminescent device |
-
2001
- 2001-10-02 JP JP2001306195A patent/JP2003113374A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101230270B (en) * | 2006-10-04 | 2012-10-03 | 夏普株式会社 | Phosphor |
| CN105623660A (en) * | 2016-03-17 | 2016-06-01 | 中南大学 | Warm white fluorescent powder excited by ultraviolet LED |
| CN105623660B (en) * | 2016-03-17 | 2018-04-03 | 中南大学 | The warm white fluorescent material that a kind of ultraviolet LED excites |
| CN113930243A (en) * | 2021-09-26 | 2022-01-14 | 深圳旭宇电子有限公司 | Near-infrared luminescent material, preparation method thereof and luminescent device |
| CN113930243B (en) * | 2021-09-26 | 2022-07-19 | 深圳旭宇电子有限公司 | Near-infrared light-emitting material, preparation method and light-emitting device |
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