JP2003100651A - Substrate heat treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate heat treatment apparatus whose heating efficiency is high and whose temperature control is superior without selecting an object to be heated. SOLUTION: In the substrate heat treatment apparatus, a ceramic heater 26 as a heating source installed at the inside of a heat treatment furnace 10 is heated by receiving the supply of a current from a power supply 30 as an energy supply source installed at the outside of the furnace 10, and it radiates heat rays having a wide wavelength distribution. Since the heat rays having the wide wavelength distribution from the ceramic heater 26 are radiated to a wafer W, the wafer W is heated without selecting the object to be heated, and the wafer W is heated directly at the inside of the furnace 10, i.e., the wafer W is heated without interposing an obstacle lowering a heating efficiency between the ceramic heater 26 and the wafer W, the heating efficiency of the substrate heat treatment apparatus can be enhanced, and the temperature control of the apparatus is superior.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a photomask,
The present invention relates to a substrate heat treatment apparatus including a heat treatment unit for performing heat treatment on a substrate to be heated such as an optical disk substrate, and more particularly to a substrate heat treatment apparatus having high heating efficiency and excellent temperature control.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process,
A semiconductor wafer as a substrate (hereinafter appropriately referred to as a wafer) into a heat treatment furnace such as a lamp annealing device.
Each wafer is loaded one by one, and the wafer in the heat treatment furnace is irradiated with light to heat the wafer, whereby impurity atoms are thermally diffused to form a pn junction, or a thermal oxide film is formed on the wafer surface. A single-wafer type substrate heat treatment apparatus for performing various annealing processes is widely used in various manufacturing processes.

As shown in FIG. 10, a lamp annealing apparatus as an example of a substrate heat treatment apparatus has a heat treatment furnace 100 having an opening / closing opening 101 for loading and unloading a wafer W, and an outside of the heat treatment furnace 100. A lamp unit 120 composed of a plurality of tungsten / halogen lamps 110 arranged in the same position, and a wafer supporting member 13 for supporting the wafer W in a horizontal posture inside the heat treatment furnace 100.
It has 0 and. The light from the lamp unit 120
Through the quartz window 140 of the heat treatment furnace 100, the heat treatment furnace 1
By irradiating the wafer W in 00, the wafer W is heated.

[0004]

However, the conventional example having such a structure has the following problems. That is, in the conventional lamp annealing apparatus as the substrate heat treatment apparatus, there is a problem that the heating efficiency is low and the temperature control during the heat treatment of the substrate is difficult, as described below.

In the conventional lamp annealing apparatus, the tungsten / halogen lamp 110 shown in FIG. 10 having the energy spectral distribution as shown in FIG. 11 is adopted.
Further, as shown in FIG. 12, a general transmission spectrum of quartz has a characteristic of blocking light of a lamp having a wavelength longer than 4 μm. Naturally, tungsten / halogen lamp 11
The light emission from the tungsten filament of 0 is the secondary heat emitted when the lamp tube is heated, though the light of wavelength longer than 4 μm is blocked by the glass tube made of quartz covering this tungsten filament. 4 μm due to radiation
Light on the longer wavelength side is radiated. Since the size of the glass tube itself is relatively small, the secondary heat radiation described above is generated in a short time. Thus, the tungsten / halogen lamp 110 has four
Light having a wavelength longer than μm can also be radiated.

On the other hand, the heat treatment furnace 100 is large,
It takes a considerable time for the heat treatment furnace 100 itself to be heated, and the lamp annealing apparatus normally controls the tungsten / halogen lamp 110 at the 50% or 25% rating shown in FIG. 11, for example, 25%. When the lamp is driven at a low output as in the rated value, the proportion of energy occupied by light of 4 μm or more is large, and light on the longer wavelength side than 4 μm is blocked by the quartz window 140 of the heat treatment furnace 100. However, the heating efficiency is lowered, and the secondary heat radiation due to the heating of the heat treatment furnace 100 itself occurs after an uncertain time. Therefore, it becomes difficult to control the temperature when heat treating the substrate. . As described above, there is a problem that the temperature control failure during the low temperature processing for controlling the tungsten / halogen lamp 110 at a low output causes various defects in the semiconductor device manufacturing process.

Further, there is a problem that the heat treatment furnace 100 itself has a heat distribution due to heat radiation from the substrate, which adversely affects the uniformity of processing.

The object to be heated is gallium arsenide (Ga).
Compounds such as As), glass substrates, transparent metal oxides, etc. do not have absorption in the light emission spectrum region of the tungsten / halogen lamp, that is, light is transmitted, making heating difficult There is a problem that some items cannot be heated. Further, even if another heating source is provided in place of the tungsten / halogen lamp, the desired wavelength range is blocked due to the transmission characteristics of the quartz window of the heat treatment furnace and heating cannot be performed.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a substrate heat treatment apparatus having high heating efficiency and excellent temperature control regardless of the object to be heated.

[0010]

The present invention has the following constitution in order to achieve such an object. That is, the substrate heat treatment apparatus according to claim 1 is a substrate heat treatment apparatus including a heat treatment unit for performing heat treatment on a substrate carried in and held therein, and emits a heat ray having a wide wavelength distribution by being heated. A heat source provided inside the heat treatment unit for heating the substrate; and an energy supply source provided outside the heat treatment unit for heating the heat source by supplying energy to the heat source. It is characterized by that.

A substrate heat treatment apparatus according to a second aspect is the substrate heat treatment apparatus according to the first aspect, wherein the heat ray has a wavelength distribution of at least 1 μm to 15 μm. To do.

A substrate heat treatment apparatus according to a third aspect is the substrate heat treatment apparatus according to the first or second aspect, wherein the heating source is a heating element that is heated by being supplied with an electric current. The energy supply source is a current supply means for supplying a current to the heating element via an electric wire connected to the heating element.

A substrate heat treatment apparatus according to a fourth aspect is the substrate heat treatment apparatus according to the third aspect, wherein the heating element is a ceramic heater, a carbon heater or a kanthal heater. .

A substrate heat treatment apparatus according to a fifth aspect is the substrate heat treatment apparatus according to the first or second aspect, wherein the energy supply source supplies energy to the heating source in a non-contact manner. It is characterized by heating a heating source.

A substrate heat treatment apparatus according to a sixth aspect of the present invention is the substrate heat treatment apparatus according to the fifth aspect, wherein the heating source is a heating element that is heated by the supply of magnetic force lines, and the energy supply is provided. The source is characterized in that it is a magnetic field line generating means.

A substrate heat treatment apparatus according to a seventh aspect is the substrate heat treatment apparatus according to the fifth aspect, wherein the heating source is a heating element that is heated by supplying electromagnetic waves, and the energy supply is provided. The source is characterized in that it is an electromagnetic wave irradiation means.

Further, a substrate heat treatment apparatus according to an eighth aspect is the substrate heat treatment apparatus according to the sixth aspect, characterized in that the heating element contains tungsten.

A substrate heat treatment apparatus according to a ninth aspect is the substrate heat treatment apparatus according to any one of the first to eighth aspects, wherein the heating source has a surface coated with ceramic. It is a feature.

A substrate heat treatment apparatus according to a tenth aspect is the substrate heat treatment apparatus according to any one of the first to ninth aspects, wherein the heating source has a shape corresponding to the substrate to be heat-treated. It is characterized by.

[0020]

The operation of the invention described in claim 1 is as follows. The substrate heat treatment apparatus includes a heat treatment unit that heats a substrate that is an object to be heated that is carried in and held inside, and a heat treatment unit that heats the substrate by emitting heat rays having a wide wavelength distribution when heated. A heating source provided inside and heating the heating source by supplying energy to this heating source,
And an energy supply source provided outside the heat treatment section.

Therefore, the heating source provided inside the heat treatment section is heated by receiving the energy supply from the energy supply source provided outside the heat treatment section to radiate the heat ray having a wide wavelength distribution. Then, since the heat ray having a wide wavelength distribution from the heating source is radiated to the substrate to heat the substrate, the object to be heated can be heated regardless of the object to be heated. In addition, since the substrate is directly heated inside the heat treatment section, that is, the substrate is heated without intervening obstacles that lower the heating efficiency between the heating source and the substrate, the heating efficiency can be improved. , Excellent in temperature control.

According to the second aspect of the invention, since the heat ray has a wavelength distribution of at least 1 μm to 15 μm, an object to be heated can be heated without being selected.

According to the third aspect of the invention, the heating source is a heating element heated by being supplied with an electric current, and the energy supply source is connected to the heating element via an electric wire. It is a current supply means for supplying a current to the heating element. Therefore, the heating element is heated by the current supply from the current supply means and radiates the heat ray having a wide wavelength distribution.

According to the invention described in claim 4, the ceramic heater, the carbon heater, or the kanthal heater is heated by the current supply from the current supply means to radiate the heat ray having a wide wavelength distribution.

Further, according to the invention of claim 5, the energy supply source heats the heating source by supplying energy to the heating source in a non-contact manner. Connect to an external energy source,
It is not necessary to provide a connecting member for supplying energy.

According to the invention of claim 6, the heating source is a heating element which is heated by the supply of magnetic force lines, and the energy supply source is a magnetic force line generating means. It is heated by the supply of magnetic force lines from the magnetic force line generation means and radiates heat rays having a wide wavelength distribution.

According to the invention of claim 7, the heating source is a heating element that is heated by the supply of electromagnetic waves, and the energy supply source is electromagnetic wave irradiating means. It is heated by the supply of electromagnetic waves from the electromagnetic wave irradiation means and radiates heat rays having a wide wavelength distribution.

According to the eighth aspect of the present invention, the heating element containing tungsten is heated by the supply of magnetic force lines from the magnetic force line generation means to radiate the heat rays having a wide wavelength distribution.

According to the invention of claim 9, since the surface of the heating source is coated with ceramic,
Contamination inside the heat treatment section is prevented, and the life of the heating source itself can be extended.

According to the invention described in claim 10,
Since the heating source has a shape corresponding to the substrate to be subjected to the heat treatment, the heat treatment can be suitably performed according to the substrate to be heated.

[0031]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. <First Embodiment> FIG. 1 is a side sectional view showing a schematic configuration of a lamp annealing apparatus as a substrate heat treatment apparatus according to a first embodiment of the present invention. FIG. 2 is a schematic diagram for explaining a heating state of the wafer W by the ceramic heater 26 according to the first embodiment. FIG. 3 is a characteristic diagram showing the energy spectral distribution of the ceramic heater 26.

As shown in FIG. 1, the lamp annealing apparatus has an opening 12 for loading and unloading a semiconductor wafer W, and a heat treatment furnace 10 as a heat treatment section for heat treating the wafer W. There is. The heat treatment furnace 10 is
It has a three-dimensional container shape (for example, a rectangular parallelepiped shape) having a heat treatment space for heat-treating the wafer W therein. The opening 12 of the heat treatment furnace 10 is opened and closed by a lid 14. A wafer support member 16 called a susceptor for horizontally supporting the semiconductor wafer W inside the heat treatment furnace 10 is attached to the lid 14 on the heat treatment furnace 10 side. The wafer support member 16 includes an annular frame 18 that is slightly larger than the disk-shaped wafer W. On the annular frame 18, for example, three wafer support pins 20 for contacting the lower surface of the wafer W and supporting the wafer W in a horizontal posture are arranged at intervals. The wafer support pins 20 are attached to the annular frame 18 from the inner peripheral side of the annular frame 18.
The shape is such that it protrudes toward the inside and then bends upward. The lid 14 is a wafer loading / unloading device 22.
This allows it to move horizontally.

The wafer loading / unloading device 22 heat-treats the wafer W before the heat treatment when the wafer W before the heat treatment is placed and supported in a horizontal posture on the wafer support member 16 pulled out of the heat treatment furnace 10. The lid 14 is horizontally moved to the left in FIG. 1 so that the opening 12 is closed by the lid 14 so as to be loaded into the furnace 10 in the horizontal posture. Further, the wafer loading / unloading device 22 moves the lid 14 to the right in FIG. 1 so that the wafer W after the heat treatment is carried out of the heat treatment furnace 10 to the outside while being horizontally supported by the wafer support member 16. Move horizontally in the direction. Further, in order to keep the airtightness inside the heat treatment furnace 10 high, an O-ring 24 is attached to the contact portion of the heat treatment furnace 10 with the lid 14.

Ceramic heaters 26 are provided at upper and lower positions inside the heat treatment furnace 10, respectively. Each ceramic heater 26 is horizontally supported by a plurality of heater support pins 28 provided inside the heat treatment furnace 10. The wafer W loaded into the heat treatment furnace 10 and supported in a horizontal posture is sandwiched between the two ceramic heaters 26. Heat treatment furnace 1
Outside 0, a power supply 30 as a current supply means for supplying a current to the ceramic heater 26 is provided. The power source 30 and the ceramic heater 26 are the electric wires 3
They are electrically connected by means of 2, and the current from the power source 30 is supplied to the ceramic heater 26 via the electric wire 32. The electric wire 32 is preferably coated with ceramic or the like in order to prevent contamination inside the heat treatment furnace 10. In FIG. 1, an individual power source 30 is provided for each ceramic heater 26, but a single power source 30 may supply current to each ceramic heater 26.

The ceramic heater 26 has a shape corresponding to the wafer W. As shown in FIG. 2, for example, the ceramic heater 26 has a disk shape in conformity with the disk-shaped wafer W. Since the temperature of the edge portion of the wafer W during the heat treatment tends to be lower than that of the central portion of the wafer W, the ceramic heater 26 has a disk shape larger than that of the wafer W. By doing this,
The temperature of the wafer W during the heat treatment is made uniform.

The ceramic heater 26 is a heating element that is heated by supplying energy, that is, by supplying electric current. As shown in FIG. 3, the ceramic heater 26 radiates heat rays having a wide wavelength distribution when heated. Ceramic heater 26
Is heated to about 0.7 μm to at least 1
It radiates heat rays with a wide wavelength distribution over a range of up to 5 μm. In addition, the heat rays in the range of 1.3 μm to 15 μm are called near infrared rays. In the tungsten / halogen lamp as the infrared lamp of the conventional example, the energy spectral distribution is concentrated in the range of 0.5 μm to 3 μm.
Although the peak of the energy intensity is near m, the ceramic heater 26 has a wider energy spectral distribution than this infrared lamp, and there is no peak where the energy intensity is concentrated in a specific range of wavelengths. Absent. In this way, by radiating a heat ray having a wide wavelength distribution over at least 1 μm to 15 μm,
It can be heated regardless of the object to be heated.

The ceramic heater 26 described above corresponds to the heating source of the present invention, and the power source 30 described above corresponds to the energy supply source of the present invention.

When the wafer W is subjected to heat treatment by radiating heat rays from the ceramic heater 26 to the inside of the heat treatment furnace 10, the process gas required for the heat treatment is supplied to the inside of the heat treatment furnace 10. The gas is appropriately supplied from (not shown), and unnecessary gas inside the heat treatment furnace 10 is appropriately exhausted from an exhaust unit (not shown).

Next, the wafer W is subjected to a rapid heat treatment (RTP: Rapid thermal Proc) by the above-mentioned lamp annealing apparatus.
ess) will be described. Rapid heat treatment,
By heating the inside of the heat treatment furnace 10 from a low temperature region to a high temperature region in a short time, the wafer W is rapidly heated (for example, in a few tens of seconds
(00 ° C.) treatment. The rapid heating process is performed in the sequence described below, as shown in FIG.
FIG. 4 is a schematic diagram showing the sequence of the rapid heating process.

As shown in FIG. 4, first, the wafer W horizontally supported by the wafer support member 16 is loaded into the heat treatment furnace 10 through the opening 12 of the heat treatment furnace 10. And
After closing the opening 12 of the heat treatment furnace 10 with the lid 14, the process gas is supplied into the heat treatment furnace 10 so as to replace the inside of the heat treatment furnace 10 with the process gas.

Next, a current is supplied from the power source 30 outside the heat treatment furnace 10 to the ceramic heater 26 inside the heat treatment furnace 10 to heat the ceramic heater 26. When the ceramic heater 26 is heated, heat rays having a wide wavelength distribution are radiated from the ceramic heater 26, and the heat rays having a wide wavelength distribution from the ceramic heater 26 are radiated.
The wafer W is directly radiated and heated inside the chamber to rapidly raise the temperature of the wafer W. When the wafer W reaches a predetermined temperature, the amount of current supplied from the power source 30 to the ceramic heater 26 is controlled so as to maintain the temperature, and the ceramic heater 2 is controlled.
The heat radiation from 6 is adjusted, and the wafer W is maintained at a predetermined temperature for a predetermined time.

After that, the current supply to the ceramic heater 26 is stopped, the radiation of the heat rays from the ceramic heater 26 is stopped, and the temperature of the wafer W is lowered. In addition, if necessary, the heat treatment furnace 10 is cooled by a cooling means (not shown).
A cooling gas that is non-reactive with respect to the wafer W whose temperature is lower than that of the wafer W is supplied to the inside of the wafer to lower the internal temperature of the heat treatment furnace 10, thereby rapidly lowering the temperature of the wafer W. May be. Then, the wafer W that has been subjected to the heat treatment is carried out together with the wafer supporting member 16, and the wafer supporting member 16 is transferred to the next wafer W.

As is clear from the above description, according to the apparatus of the first embodiment, the heat treatment furnace 10 for heat-treating the object to be heated (for example, the wafer W) carried in and held inside, and the heat treatment furnace 10. The ceramic heater 26 provided inside the heat treatment furnace 10 that heats the wafer W by radiating heat rays having a wide wavelength distribution, and the ceramic heater 26.
The ceramic heater 26 provided inside the heat treatment furnace 10 is provided with the power source 30 provided outside the heat treatment furnace 10 for heating the ceramic heater 26 by supplying energy to the heat treatment furnace 10. By being heated by receiving a current supply from a power supply 30 provided outside,
It radiates heat rays with a wide wavelength distribution. Ceramic heater 26
The wafer W can be heated by radiation of a heat ray having a wide wavelength distribution from, for example, the object to be heated is gallium arsenide (GaA).
Even in the case of compounds such as s), glass substrates, and transparent metal oxides, these can be heated and can be heated regardless of the object to be heated.

Further, an obstacle that directly heats the wafer W inside the heat treatment furnace 10, that is, an obstacle that lowers the heating efficiency between the ceramic heater 26 and the wafer W (such as the quartz window of the heat treatment furnace of the above-mentioned conventional example). Since the wafer W is heated without intervening the above), the wafer W can be overheated by thermal convection and heat radiation by the ceramic heater 26, the heating efficiency can be improved, and the temperature control is excellent. In the above-mentioned conventional apparatus, while the heat treatment furnace receives external light irradiation from the tungsten / halogen lamp, secondary heat radiation from the quartz window of the heat treatment furnace occurs after an uncertain time, which Although there is a problem that it is difficult to control the temperature by acting on the temperature rise of the wafer W in the heat treatment furnace, such an obstacle is eliminated in the apparatus of the first embodiment, and it is possible to remove the obstacle from the obstacle. It can be seen that the temperature control is excellent because the generation of secondary heat radiation is eliminated.

Further, in the first embodiment, the ceramic heater 26 has a disk shape according to the shape of the wafer W. However, in the case of a rectangular substrate, the shape is made into a rectangular shape, such as a dot shape. The shape may be optimized according to the object to be heated, such as a rod, a plane, or a sphere. By doing so, the object to be heated can be suitably heat-treated.

Further, in the first embodiment, the ceramic heater 26 is integrated as shown in FIG. 2, but the ceramic heater 26 is composed of a plurality of divided ceramic heaters. Good. FIG. 5 is a schematic perspective view showing a ceramic heater 26 including a plurality of divided ceramic heaters 34. For example, the ceramic heater 26 may be composed of a plurality of divided ceramic heaters 34 which are divided into concentric circles as shown in FIG. The ceramic heater 26 may be composed of a plurality of divided ceramic heaters 34 having a desired shape.

Further, in the first embodiment, the ceramic heater 26 has a rectangular shape in a side view as shown in FIG. 1, but it is necessary to make the temperature of the wafer W uniform during the heat treatment. In some cases, various shapes as shown in FIGS. 6A to 6C may be adopted. Figure 6
(A)-(c) is a schematic side view which shows the ceramic heater 26 which made side view a shape other than a rectangle. Since the temperature of the edge portion of the wafer W tends to be lower than that of the central portion of the wafer W, the thickness of the ceramic heater 26 may be increased toward the end portion as shown in FIG. 6A. As shown in FIG. 6B, the ceramic heater 26 has a curved surface shape such that its end portion is brought closer to the wafer W, and as shown in FIG.
The temperature of the wafer W may be made uniform by, for example, forming a shape of “6” in cross section.

Further, although the ceramic heater 26 is used as the heating source in the first embodiment, a carbon heater or a kanthal heater may be used. Ceramic heater 2 such as carbon heater or Kanthal heater
When a heater 36 other than 6 is adopted, it is preferable to coat the surface thereof with a ceramic 38 as shown in FIG. By coating with the ceramic 38, the heat treatment furnace 1
It is also possible to prevent the contamination of the inside of the heating source 0, extend the life of the heating source itself, and introduce the reactive gas into the heat treatment furnace 10. Even in the case of a carbon heater or a kanthal heater, when a current is supplied and heated, a heat ray having a wide wavelength distribution is radiated, which is almost the same as the ceramic heater 26 shown in FIG.

<Second Embodiment> A second embodiment will be described with reference to FIG. FIG. 8 is a side sectional view showing a schematic configuration of a lamp annealing apparatus as a substrate heat treatment apparatus according to the second embodiment.

In the above-described first embodiment, the ceramic heater 26 is used as the heating source and the power source 30 for supplying the electric current to the ceramic heater 26 via the electric wire 32 is used as the energy supply source. , This second
In the embodiment, the heating element 40 made of metal is used as the heating source, and the magnetic force line generator 42 is used as the energy supply source. The same components as those in the first embodiment described above are designated by the same reference numerals, and detailed description thereof will be omitted.

The metal heating element 40 is a member made of metal, and in the second embodiment, it is a metal member containing tungsten. The metal heating elements 40 are respectively arranged at the upper position and the lower position inside the heat treatment furnace 10 as in the first embodiment.

The magnetic force line generators 42 are provided outside the heat treatment furnace 10 above the upper furnace wall of the heat treatment furnace 10 and below the lower furnace wall of the heat treatment furnace 10, respectively. The magnetic force line generator 42 has a circular shape in a plan view, and has a heating coil 44 wound inside in a spiral shape around the central axis of the circle. The magnetic force line generator 42 described above corresponds to the magnetic force line generating means of the present invention.

The mechanism of heating the metallic heating element 40 by the magnetic force line generator 42 will be described below. As shown in FIG. 8, the magnetic force line generator 42 includes a heating coil 44.
An electric current is applied to the magnetic field to generate magnetic force lines G. This line of magnetic force G
Is a heat treatment furnace 10 made of, for example, quartz as a non-metal material.
Of the metallic heating element 4 that penetrates through the upper furnace wall or the lower furnace wall of the
When passing through 0, an induced current (eddy current) is generated in the metal heating element 40. Induced current and metal heating element 4
With the electric resistance of 0, the metal heating element 40 itself is heated to generate heat. The magnetic force line generator 42 alternately inverts the polarity of the current supplied to the heating coil 44 in order to alternately invert the direction of the magnetic force lines G generated inside the metal heating element 40. Heating element 40
The heating of the metal heating element 40 is adjusted by controlling the induced current generated in the inside.

The metal heating element 40 is electromagnetically heated, so that a heat ray having a wide wavelength distribution is radiated in substantially the same manner as the ceramic heater 26 of the first embodiment.

As is apparent from the above description, according to the apparatus of the second embodiment, the magnetic force line generator 42 supplies the magnetic force line G as energy to the metallic heating element 40 in a non-contact manner to make the metallic element. Since the heating element 40 of is electromagnetically heated,
Metal heating element 40 inside heat treatment furnace 10 and heat treatment furnace 1
It is not necessary to provide the electric wire 32 as a connecting member for supplying energy, which is used to connect the external magnetic field generator 42 of 0.

Even when the metal heating element 40 is used as the heating source and the magnetic force line generator 42 is used as the energy supply source, heat rays having a wide wavelength distribution are emitted from the metal heating element 40 to the wafer W. Since the lever wafer W is heated, any object to be heated can be heated. Further, since the wafer W is directly heated inside the heat treatment furnace 10, that is, the wafer W is heated without interposing an obstacle that lowers heating efficiency between the metal heating element 40 and the wafer W, The heating efficiency can be improved and the temperature control is excellent.

In the second embodiment, the metal heating element 40 is used as the heating source, but a Kanthal heater or the like may be used as the heating source.

<Third Embodiment> A third embodiment will be described with reference to FIG. FIG. 9 is a side sectional view showing a schematic configuration of a lamp annealing apparatus as a substrate heat treatment apparatus according to the third embodiment.

In the first embodiment described above, the ceramic heater 26 is used as the heating source, and the power source 30 for supplying the electric current to the ceramic heater 26 via the electric wire 32 is used as the energy supply source. , This third
In the embodiment, the heating element 50 that is heated by the supply of the electromagnetic wave D is used as the heating source, and the electromagnetic wave irradiation device 52 is used as the energy supply source. The same components as those in the first embodiment described above are designated by the same reference numerals, and detailed description thereof will be omitted.

The heating element 50 is made of a material that is heated by the supply of the electromagnetic wave D, that is, heat is generated by absorbing the electromagnetic wave energy. In this embodiment, for example, ceramic is used as the heating element 50. The heating elements 50 are respectively arranged at the upper position and the lower position inside the heat treatment furnace 10 as in the first embodiment.

The electromagnetic wave irradiation device 52 is provided outside the heat treatment furnace 10, above the upper furnace wall of the heat treatment furnace 10 and below the lower furnace wall of the heat treatment furnace 10. The electromagnetic wave irradiation device 52 has an electromagnetic wave irradiation unit (electrode) 54 that radiates the electromagnetic wave D to the outside.
The electromagnetic wave irradiation device 52 described above corresponds to the electromagnetic wave irradiation means of the present invention.

The mechanism of heating the heating element 50 by the electromagnetic wave irradiation device 52 will be described below. As shown in FIG. 9, the electromagnetic wave irradiation device 52 causes a high-frequency current to flow through the electromagnetic wave irradiation unit 54, and causes the electromagnetic wave irradiation unit 54 to generate an electromagnetic wave D to be radiated to the outside. The electromagnetic wave D passes through the upper furnace wall or the lower furnace wall of the heat treatment furnace 10 made of, for example, quartz as a non-metal material, and irradiates the heating element 50. Inside the heating element 50, the heating element 50 itself is heated due to absorption of electromagnetic wave energy to generate heat. In addition,
The electromagnetic wave irradiation device 52 irradiates the heating element 50 with the electromagnetic wave D.
The heating of the heating element 50 is adjusted by adjusting the strength of the heating element.

The heating element 50 is heated by irradiation with electromagnetic waves, so that a heat ray having a wide wavelength distribution is radiated as in the case of the ceramic heater 26 of the first embodiment.

As is apparent from the above description, according to the apparatus of the third embodiment, the electromagnetic wave irradiation device 52 supplies the electromagnetic wave D as energy to the heating element 50 without contacting the heating element 50 to generate the electromagnetic wave. Because it heats by irradiation, heat treatment furnace 1
It is not necessary to provide the electric wire 32 as a connecting member for connecting the heating element 50 inside 0 and the electromagnetic wave irradiating device 52 outside the heat treatment furnace 10, which is used for supplying energy as in the first embodiment.

Even when the heating element 50 is used as the heating source and the electromagnetic wave irradiation device 52 is used as the energy supply source, heat rays having a wide wavelength distribution from the heating element 50 are radiated to the wafer W to heat the wafer W. Therefore, the object to be heated can be heated regardless of the object to be heated. Further, since the wafer W is directly heated inside the heat treatment furnace 10, that is, the wafer W is heated without interposing an obstacle that lowers the heating efficiency between the heating element 50 and the wafer W, the heating efficiency is improved. It can be improved and has excellent temperature control.

In the third embodiment, ceramic is used as the heating element 50, but carbon whose surface is coated with ceramic may be used.

In the third embodiment, as the electromagnetic wave irradiating means, the electromagnetic wave irradiating device 52 for irradiating the electromagnetic wave D having a frequency lower than 3 THz (terahertz) is adopted, but the electromagnetic wave irradiating means uses infrared rays or visible light. You may employ | adopt the light irradiation device provided with the lamp (light source) which emits.

The present invention is not limited to the above embodiment,
Modifications can be made as follows.

(1) In each of the above-described embodiments, the wafer supporting member 16 is placed in the vicinity of the substrate (wafer W) inside the heat treatment furnace 10 so that the temperature of the substrate is equalized. Although not provided with a heat equalizing member, a soaking member may be provided if necessary.

(2) In the above-mentioned embodiment, the lamp annealing apparatus is adopted as an example of the substrate heat treatment apparatus.
It can also be applied to various substrate heat treatment apparatuses other than the lamp annealing apparatus.

[0071]

As is apparent from the above description, the present invention has the following effects. According to the first aspect of the invention, the heating source provided inside the heat treatment section is heated by receiving energy supply from the energy supply source provided outside the heat treatment section. Since a wide heat ray is radiated and the heat ray having a wide wavelength distribution from this heating source is radiated to the substrate to heat the substrate, it is possible to heat any object to be heated. In addition, since the substrate is directly heated inside the heat treatment section, that is, the substrate is heated without intervening obstacles that lower the heating efficiency between the heating source and the substrate, the heating efficiency can be improved. , Excellent in temperature control.

According to the second aspect of the present invention, since the heat ray has a wavelength distribution of at least 1 μm to 15 μm, an object to be heated can be heated without being selected.

According to the third aspect of the present invention, the heating source is a heating element that is heated by being supplied with an electric current, and the energy supply source is connected to the heating element through an electric wire. Since the current supply means for supplying a current to the heating element is used, even if the heating element is heated by the current supply, it is possible to radiate heat rays having a wide wavelength distribution.

Further, according to the invention described in claim 4, by adopting a ceramic heater, a carbon heater or a kanthal heater as a heating source, a current is supplied from the current supplying means to be heated and a wide wavelength distribution is obtained. A suitable heating element that emits heat rays is obtained.

According to the invention of claim 5, the energy supply source heats the heating source by supplying energy to the heating source in a non-contact manner. Therefore, the heating source inside the heat treatment section and the heat treatment section. Connect to an external energy source,
It is not necessary to provide a connecting member for supplying energy.

Further, according to the invention described in claim 6, the heating source is a heating element which is heated by the supply of the magnetic force lines, and the energy supply source is the magnetic force line generating means. Even in the case of the heat generating element, a heat ray having a wide wavelength distribution can be radiated.

Further, according to the invention described in claim 7, since the heating source is a heating element which is heated by the supply of the electromagnetic wave and the energy supply source is the electromagnetic wave irradiation means, the heating is performed by the electromagnetic wave supply. Even in the case of the heat generating element, a heat ray having a wide wavelength distribution can be radiated.

Further, according to the invention described in claim 8, by adopting a heating element containing tungsten, a heat ray having a wide wavelength distribution is heated by receiving the magnetic force ray from the magnetic force ray generating means. A suitable heating element that radiates is obtained.

Further, according to the invention described in claim 9, since the surface of the heating source is coated with ceramic,
Contamination inside the heat treatment section is prevented, and the life of the heating source itself can be extended.

According to the invention described in claim 10,
Since the heating source has a shape corresponding to the substrate to be subjected to the heat treatment, the heat treatment can be suitably performed according to the substrate to be heated.

[Brief description of drawings]

FIG. 1 is a side sectional view showing a schematic configuration of a lamp annealing apparatus according to a first embodiment of the present invention.

FIG. 2 is a schematic diagram for explaining a heating state of a wafer by the ceramic heater according to the first embodiment.

FIG. 3 is a characteristic diagram showing an energy spectral distribution of the ceramic heater of the first embodiment.

FIG. 4 is a schematic diagram showing a sequence of rapid heat treatment.

FIG. 5 is a schematic perspective view showing a ceramic heater including a plurality of divided ceramic heaters.

6A to 6C are schematic side views showing a ceramic heater having a shape other than a rectangle in a side view.

FIG. 7 is a schematic cross-sectional view showing a heating source when the surface is coated with ceramic.

FIG. 8 is a side sectional view showing a schematic configuration of a lamp annealing apparatus according to a second embodiment of the present invention.

FIG. 9 is a side sectional view showing a schematic configuration of a lamp annealing apparatus according to a third embodiment of the present invention.

FIG. 10 is a side sectional view showing a schematic configuration of a conventional lamp annealing apparatus.

FIG. 11 is a characteristic diagram showing an energy spectral distribution of a conventional tungsten-halogen lamp.

FIG. 12 is a characteristic diagram showing a transmission spectrum of quartz.

[Explanation of symbols]

10 ... Heat treatment furnace 26 ... Ceramic heater 30 ... Power supply 32 ... Electric wire 36 ... Heater 38 ... Ceramic 40 ... Metal heating element 42 ... Magnetic field generator 50 ... Heating element W ... substrate

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 4K063 AA05 AA12 BA12 CA01 FA05                       FA81 FA82                 5F045 AB32 BB08 DP02 EK09 EK22                       EK27 EK30

Claims (10)

[Claims] 1. A substrate heat treatment apparatus having a heat treatment unit for performing heat treatment on a substrate carried in and held therein, wherein the heat treatment unit heats a substrate by emitting heat rays having a wide wavelength distribution when heated. A substrate provided with an internal heating source and an energy supply source provided outside the heat treatment section for heating the heating source by supplying energy to the heating source. Heat treatment equipment. 2. The substrate heat treatment apparatus according to claim 1, wherein the heat ray has a wavelength distribution of at least 1 μm to 15 μm.
A substrate heat treatment apparatus having a range of up to μm. 3. The substrate heat treatment apparatus according to claim 1, wherein the heating source is a heating element that is heated by supplying an electric current, and the energy supply source is connected to the heating element. A heat treatment apparatus for a substrate, which is a current supply means for supplying a current to the heating element through the generated electric wire. 4. The substrate heat treatment apparatus according to claim 3, wherein the heating element is a ceramic heater, a carbon heater, or a kanthal heater. 5. The substrate heat treatment apparatus according to claim 1, wherein the energy supply source heats the heating source by supplying energy to the heating source in a non-contact manner. Heat treatment equipment. 6. The substrate heat treatment apparatus according to claim 5, wherein the heating source is a heating element that is heated by the supply of magnetic force lines, and the energy supply source is magnetic force line generation means. Substrate heat treatment equipment. 7. The substrate heat treatment apparatus according to claim 5, wherein the heating source is a heating element that is heated by being supplied with electromagnetic waves, and the energy supply source is electromagnetic wave irradiation means. Substrate heat treatment equipment. 8. The substrate heat treatment apparatus according to claim 6, wherein the heating element contains tungsten. 9. The substrate heat treatment apparatus according to claim 1, wherein the heating source has a surface coated with ceramic. 10. The substrate heat treatment apparatus according to claim 1, wherein the heating source has a shape corresponding to the substrate to be heat-treated.