JP2003051462A - Method and apparatus for forming electrode of β-FeSi2 element - Google Patents

Abstract

(57) [Summary] [PROBLEMS] Highly reliable β-Fe without disconnection
Provided are a method and an apparatus for forming an electrode of a Si ₂ element. SOLUTION: In air or inert gas atmosphere,
The β-FeSi ₂ material is heated to α-F by heating all or a part of the surface portion of the β-FeSi ₂ material.
e ₂ Si _{5 The} phase is changed to the metal phase, and then the phase-changed part is cooled and returned to room temperature to form a highly conductive electrode. A heating source is applied to one point on the surface of the sample placed on the stage. Α-Fe ₂ Si ₅ phase, and the next heating place should not be a connected adjacent place, but the heating source is moved to one point of position B so far away as heat does not spread and heated, and during that time, By heating the heated point A, heating / metallization is performed by touching the already cooled point A and then applying a heating source, and by repeating this heating / cooling operation, the desired electrode pattern is formed by connecting the metallized portions. To form

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a β-FeSi ₂ thin film semiconductor element device, which is in the spotlight in the field of electronics, and relates to a β-for forming an electrode for allowing current to flow in and out of a thin film substrate. The present invention relates to an electrode forming method of a FeSi ₂ element and an apparatus thereof.

[0002]

2. Description of the Related Art A general semiconductor device is a silicon (S
i) A functional material thin film is formed on a substrate or other flat substrate material, and fine electrode wiring for light emission, light reception, memory, IC circuit devices, etc. is formed on the thin film. In order to perform this wiring, it is necessary to deposit a metal conductor thin film on the device surface by plating, vapor deposition, sputtering, or ion rating, and then use photolithography technology to make the metal thin film fine. Elements have been processed into patterns.

On the other hand, recently, when electrode wiring is performed on a β-FeSi ₂ thin film semiconductor element (device), when the laser beam is focused and one point of the semiconductor thin film is heated, the heated portion is converted into a metal phase. Then, an electrode forming method has been proposed which is non-contact and does not require deposition of a metal thin film.

In this electrode forming method, a metal film is formed in a vacuum as in the conventional method, and an expensive photolithographic (pattern mask preparation-resist coating-exposure-etching) process and the like take a lot of time and cost. It was a preferable method compared to the method with high manufacturing cost that was inspected.

[0005]

As described above, according to the prior art, the semiconductor thin film is heated at the focus of the laser beam, and if the point is metallized, the heating point is gradually shifted and continuously irradiated. However, although the metallized portion is connected (continuous sweep), when this continuous sweep is performed, the metallized portion is exposed to high temperature for some time before it cools.

However, the α-Fe ₂ Si ₅ phase has 650 to 9
When left in the vicinity of 00 ° C., it returns to the β-FeSi ₂ phase semiconductor layer again, the conductivity as an electrode is lost, and as a result, the electrode is broken. That is, when the electrode pattern is formed by continuous sweeping with laser heating, disconnection may occur.

Further, when a pattern having a complicated shape with intricate curves is formed, it is necessary to connect the laser-heated portions point by point, rather than sweeping by continuous irradiation.
In that case, if the next point is heated adjacent to the metallized spot, the overlapped portion is kept at a high temperature and becomes a semiconductor again. This is also a cause of a wire breakage as in the above case.

In view of the above situation, an object of the present invention is to provide a highly reliable method for forming an electrode of a β-FeSi ₂ element and a device therefor, which will not cause disconnection.

[0009]

The present invention has the above-mentioned object.
To achieve [1] Semiconductor β-FeSi₂It is a method of forming the electrode of the element
Therefore, in the atmosphere or an inert gas atmosphere, the β-
FeSi₂Heating all or part of the material surface
The β-FeSi₂Material is α-Fe₂S
i_FiveA phase transition to a metal phase, and then the phase transition part
To cool it to room temperature and make it a highly conductive electrode.
Apply a heating source to a point on the surface of the sample on the
e₂Si _FiveThe place to be phased and then heated is next to the connected
Don't put it in a suitable place
Move the heating source to one point to heat, while heating first
By the cooling of the point that was
Heating / metallization is performed by applying a heating source,
By repeating the heating and cooling operations, it is possible to connect the metallized parts.
Thus, a desired electrode pattern is formed.

[2] A method for forming an electrode of a semiconductor β-FeSi ₂ element, wherein all or part of the surface portion of the β-FeSi ₂ material is heated in the atmosphere or an inert gas atmosphere to produce α-Fe. ₂ Si ₅ metal phase is the phase transition, then cooled to the phase transition is not part, upon the good electrode conductivity returned to room temperature, a laser beam is expanded by a beam expander, using a lens After forming the parallel rays, the beam is condensed into a thin linear shape by using a cylindrical lens, and β-FeS is placed at the focus position of the linear shape.
It is characterized in that the i ₂ material is placed and heated, and the α-Fe ₂ Si ₅ metal phase is formed to form a linear electrode pattern.

[3] In the method of forming an electrode of a β-FeSi ₂ element according to the above [2], when the cylindrical lens is used as a lens of a beam expander for expanding the laser light, the light is condensed linearly. Is characterized in that the linear power distribution of is uniform.

[4] A method for forming an electrode of a semiconductor β-FeSi ₂ element, wherein all or part of the surface portion of the β-FeSi ₂ material is heated in the atmosphere or an inert gas atmosphere to heat the α-Fe ₂ Si ₅ metal phase is the phase transition, then cooled to the phase transition is not part, upon the good electrode conductivity returned to room temperature, a laser beam is expanded by a beam expander, using a lens After making parallel rays, the surface of the β-FeSi ₂ material is irradiated and heated by using a Fresnel lens that forms an arc at the focal point, and the irradiated and heated portion is converted into α-Fe ₂ Si ₅ metal phase to form an arc shape. The electrode pattern is

[5] An electrode forming apparatus for a semiconductor β-FeSi ₂ element, which comprises means for heating all or part of the surface portion of the β-FeSi ₂ material in the atmosphere or an inert gas atmosphere, and this heating. By means of the means, the β-FeSi ₂ material undergoes a phase transition to an α-Fe ₂ Si ₅ metal phase, and then the phase transition portion is cooled and returned to room temperature to obtain an electrode with good conductivity, a stage Apply a heating source to one point on the surface of the sample placed on to make α-Fe ₂ Si ₅ phase, and then heat to one point at a position far away so that heat does not spread, instead of connecting to adjacent places to heat. Means for heating / metallizing by moving the source to heat it, while cooling the previously heated point, by contacting the already cooled point and then applying the heating source. Do not repeat the operation And forming a desired electrode pattern by connecting Luo metallization.

[6] An electrode forming apparatus for a semiconductor β-FeSi ₂ element, which comprises means for heating all or part of the surface portion of the β-FeSi ₂ material in the atmosphere or an inert gas atmosphere, and this heating. By means of the means, the β-FeSi ₂ material undergoes a phase transition to an α-Fe ₂ Si ₅ metal phase, and then the phase transition portion is cooled and returned to room temperature to obtain an electrode with good conductivity, a laser A beam expander that expands the light and a laser beam that is expanded by this beam expander are made into parallel rays using a lens, and then a cylindrical lens that focuses the beam into a thin linear shape is provided. The β-FeSi ₂ material is placed on the linear focus position and heated to produce α-Fe ₂
It is characterized in that a linear electrode pattern is formed by converting the Si ₅ metal phase.

[7] In the electrode forming apparatus for a β-FeSi ₂ element according to the above [6], the cylindrical lens is provided as a lens of a beam expander that expands the laser beam, and a straight line when condensed linearly It is characterized in that the power distribution is uniform.

[8] An electrode forming apparatus for a semiconductor β-FeSi ₂ element, which comprises means for heating all or part of the surface portion of the β-FeSi ₂ material in the atmosphere or an inert gas atmosphere, and this heating. By means of the means, the β-FeSi ₂ material undergoes a phase transition to an α-Fe ₂ Si ₅ metal phase, and then the phase transition portion is cooled and returned to room temperature to obtain an electrode with good conductivity, a laser A beam expander that expands the light and a Fresnel lens that forms a circular arc at the focal point after the laser light expanded by this beam expander is made into parallel rays using a lens, and this Fresnel lens is used. Β-FeSi ₂
The material surface is irradiated and heated, and the part of this irradiation and heating is α-Fe.
It is characterized in that ₂ Si ₅ metal phase is formed into an arc-shaped electrode pattern.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings.

The feature of the present invention is that the device material β-Fe
This is because the Si ₂ thin film utilizes the fact that crystal transformation occurs due to the heating operation and is converted into α-Fe ₂ Si ₅ which is a metal body.

FIG. 1 shows a first embodiment of the present invention, in which a portion of the β-FeSi ₂ phase is converted into α-Fe ₂ S by laser heating.
is a schematic diagram of an electrode forming apparatus for use to be converted, i ₅ phase.

In this embodiment, a sample plate 1 having a β-FeSi ₂ film previously grown on a Si crystal substrate is fixed to a stage 10 which is controlled by a computer 9 and is driven so as to draw an electrode pattern 2. ing. The laser beam 6 emitted from the Nd: YAG laser 8 which is also controlled by the computer 9 passes through the mirror 5 which optimally constructs the optical path of the device, passes through the beam switch 7 which is also controlled by the computer 9, and is collected. It is collected by the optical lens 4 and focused on the heating point 3 on the sample surface. The scattered light reflected from the sample surface is absorbed by the absorber 11.

FIG. 3 shows a first embodiment of the present invention, β-Fe
It is an explanatory view of an electrode forming method of the Si ₂ elements.

In this embodiment, two locations A and B which are sufficiently separated from each other but must be connected as electrodes are designated as A and B. In addition, the passage of time is shown in (1) to (7).

First, as shown in (1), the spot where the laser beam is first irradiated is the spot at the location A. If this point is heated above 982 ° C to below 1200 ° C, α-Fe
₂ Change to Si ₅ phase.

Next, as shown in (2), the beam spot is moved to a position B which is sufficiently distant from the position A to start heating. During this period, the point A is indicated by the point A'in which the temperature has dropped. 1 while heating place B
The 0 spot is rapidly cooled and remains in the metallic phase even at room temperature.

Next, as shown in (3), the laser beam is moved from the location B to the location A to start heating. At this time, the place A is in a position where it partially overlaps the place A, but since the place A is cooled, it remains in the metallic phase. While location A is heating, location B'is cooling.

Next, when the place A is sufficiently heated, the spot is moved to the place B shown in (4) to heat the point overlapping the place B. During this time, the place A'is cooling.

Similarly, as shown in (5), the point A in contact with the place A is heated, and then the point B is heated to be metalized as shown in (6). The spots are connected. If you irradiate and heat one point like this,
By repeating the operation of moving the next heating point to a sufficiently distant position under the control of the computer 9, it is possible to form an electrode pattern in which metallized points are continuous, as shown in (7).

FIG. 2 illustrates this relationship and shows the binary state of Fe and Si.

As shown in this figure, the semiconductor β-FeSi
₂ The composition of the sample on which the thin film is formed exists at point A on the phase diagram. When this material is heated by a laser annealing method or the like to reach the C point beyond the β phase decomposition temperature (982 ° C.) B point, the heated portion is a slight ε-FeSi phase and most of it is α-F.
It becomes a mixed crystal phase of the e ₂ Si ₅ phase. The α-Fe ₂ Si ₅ phase obtained by conversion here is used as an electrode material.

In this case, the position of the phase diagram of the portion which has become the α-Fe ₂ Si ₅ phase is point E. When the material converted to the α phase is rapidly cooled to 620 ° C. or lower, it does not become a mixture of β-FeSi ₂ and Si, which is the original stable thermal equilibrium phase,
It remains as α-Fe ₂ Si ₅ . Since this crystal phase is a metal, it functions as an electrode material.

However, at this time, if it is left for a long time in the vicinity of 900 ° C. to 650 ° C. without being rapidly cooled to 620 ° C. or less, α
The —Fe ₂ Si ₅ phase is again combined with the β-FeSi ₂ semiconductor phase and S
Since it is decomposed and deposited into i, it does not exhibit metal characteristics as an electrode. In order to use the portion converted from the β-FeSi ₂ phase to the α-Fe ₂ Si ₅ phase as an electrode, rapidly,
It is important to cool to 620 ° C or lower.

As described above, in order to avoid the disadvantage of continuous sweep irradiation, after metallizing one point, a point adjacent to the cooled spot is rapidly heated for a sufficient time and metallized for a sufficient time. There is also a quick cooling method. This operation should be continued, but this creates a gap during the metallization process and takes a lot of time to make the electrode pattern.

Therefore, in the first embodiment, the laser spots are not adjacent to each other, and the next shot having the spots is set at a sufficiently distant position where heat does not reach. When the heat has cooled sufficiently, the beam is irradiated adjacent to the spot made earlier to form a continuous row of metal spots. Therefore, the surface of the β-FeSi ₂ semiconductor material is spot-irradiated with a laser beam, and by overlapping the spot of the α-Fe ₂ Si ₅ phase, which has been prepared in advance, to form an electrode, the β-FeSi ₂ semiconductor material is again β-shaped and disconnected. It is possible to solve the conventional problem of being lost.

In general, with the laser power that is easily available and usable, when the laser beam is narrowed down using a lens, the size of the image at the focal position becomes several μm to several tens of μm, and the laser spot diameter when this is metallized. Is.
Therefore, in order to make an electrode pattern by connecting this spot group with a width required for the electrode pattern and a distance of several mm,
Several hundred to several thousand heating and cooling operations are required, which requires a lot of man-hours and time. Therefore, the present invention solves such a problem by the following second embodiment.

FIG. 4 shows β-Fe showing a second embodiment of the present invention.
Si ₂ element is a schematic view of the electrode forming device.

Here, the method of metallizing the α-Fe ₂ Si ₅ phase by a single heating and cooling operation for a certain pattern distance is effective.

A figure frequently formed in the device electrode pattern is a straight line portion. Therefore, in this embodiment, the straight line portion is to be created by laser irradiation once.

That is, when the laser beam 27 emitted from the laser source 28 passes through the expander lens 26 and spreads sufficiently, the lens 2 for forming parallel rays is used.
Place 4. A reflector 25 or the like that redirects the laser beam 27 may be used to optimize the spatial distance and placement of the laser source 28 to the device.

When the cylindrical lens 23 is placed where the light beam is sufficiently spread, the laser beam 24A is linearly condensed at the point where the laser beam 24A is focused. By arranging the β-FeSi ₂ semiconductor film 21 at this linear focus position 22, it is possible to form a metal part as an electrode having a width of several 10 μm and a length of several mm by one irradiation, and it is possible to perform repeated spot irradiation operations. Compared with this, work time and man-hours can be saved significantly.

The expanders and lenses used here are
Transparent glass may be used, or a concave reflecting mirror may be used.

It is also possible to use a cylindrical lens as the expander lens. In this embodiment,
Since the expander expands the beam into a conical shape and then collects it in a linear shape, the linear optical power is not uniform. Therefore, in order to make the optical power of the linear focus uniform, a cylindrical lens may be used for the expander, and the cylindrical lens for condensing and the optical axis may be adjusted.

FIG. 5 shows a third embodiment of the present invention β-Fe
Si ₂ element is a schematic view of the electrode forming device.

Among the device electrode patterns, a figure often seen in the light receiving sensor is an arc electrode. This figure is a time-consuming figure when it is formed only by linear movement of the beam spot, and it is necessary to repeat fine XY movement. In this embodiment, the circular arc portion is to be created by one laser irradiation.

That is, similarly to the second embodiment, the laser beam 27 emitted from the laser source 28 is sufficiently expanded by using the expander lens 26, and the lens 24 for making a parallel beam is placed (FIG. 4). reference).

Further, in this embodiment, the Fresnel lens 30 is placed at a position where the parallel beam is sufficiently spread. The Fresnel lens 30 has a structure in which a radial cross section between the center and the peripheral edge thereof operates similarly to a convex lens. For example, the light rays incident on the portions 27 and 31 corresponding to the right side of the center of the Fresnel lens 30 are condensed at the point 41A.

The light ray incident on the portion 32 on the left side is focused on the position of the point 41B. Since the groove 33 of the Fresnel lens 30 is concentrically formed from the center of the lens 30, the light ray incident on the Fresnel lens 30 is condensed in an arc shape at the focal position. By disposing the β-FeSi ₂ semiconductor film 40 at this focal point, it is possible to form an arc-shaped metal portion 42 having a required size by one irradiation, and this serves as an electrode.

As described above, according to the present invention, the arc-shaped condensing point can be changed to a metal and used as an electrode, which can significantly reduce the working time and the operation process as compared with the conventional repeated spot irradiation operation. You can save.

The expanders and lenses used here are
Transparent glass or a reflecting mirror may be used.

Up to now, a single cylindrical lens or Fresnel lens has been used as a mechanism for efficiently forming a pattern electrode with a laser beam. However, by combining two or more of these, a pattern combining a curve and a straight line is used. It is also possible to make. In order to actually manufacture the electrodes, the sample plate attached to the stage is moved in the vertical and horizontal directions, and the above patterns are combined and processed.

Further, if the laser power has a margin and is strong, a mask of a desired electrode pattern is created without taking a troublesome method of forming an electrode pattern by combining lines, and the figure is formed by a lens as a semiconductor. It is also possible to obtain a desired electrode with a single irradiation by directly projecting it onto the film surface and metallizing the irradiated portion.

The energy required for heating varies depending on the light absorptivity, thermal conductivity, melting point, specific heat, etc. of the material to be irradiated, but it is 10 ⁺⁶ W / in order to heat a region with a radius of 10 μm to around 1000 ° C. An energy density of cm ² is required, and a short time in seconds is sufficient. An ordinary laser having a beam diameter of 1 to 2 mm may have an output of several W.

Wavelength 1.06 μm for β-FeSi ₂
When Nd: YAG laser is used, the light absorption rate is 1
Since it is as high as 0 ⁺⁵ and its thermal conductivity is very low as used in thermoelectric materials, a minute region having a diameter of 50 μm can be heated to around 1000 ° C. by irradiating it with an output of 10 W for several seconds.

The present invention is not limited to the above embodiments, and various modifications can be made based on the spirit of the present invention, and these modifications are not excluded from the scope of the present invention.

[0054]

As described in detail above, according to the present invention, the following effects can be achieved.

(A) When a part of the β-FeSi ₂ thin film is heated and cooled by narrowing down the laser beam and the part is converted to the α-Fe ₂ Si ₅ phase which is a metal phase to form a conductive electrode. In addition, since the points which are sufficiently apart from each other are metallized without overlapping the points which are adjacent to each other to finally form a continuous electrode, the disconnection does not occur.

(B) Since a continuous straight line or an arc is formed by heating once without connecting small spots, there is an effect that it takes only a short time to form an electrode pattern.

[Brief description of drawings]

FIG. 1 is a schematic view of an electrode forming apparatus showing a first embodiment of the present invention.

FIG. 2 is a two-dimensional phase diagram of iron and silicon and a principle diagram for explaining a phenomenon when metallizing by heating.

FIG. 3 is an explanatory diagram of an electrode forming method for a β-FeSi ₂ element showing the first embodiment of the present invention.

FIG. 4 is a schematic diagram of an electrode forming apparatus for a β-FeSi ₂ element showing a second embodiment of the present invention.

FIG. 5 is a schematic diagram of an electrode forming apparatus for a β-FeSi ₂ element showing a third embodiment of the present invention.

[Explanation of symbols]

1 sample plate 2 electrode pattern 3 heating point 4 condenser lens 5, 25 mirror (reflecting mirror) 6, 24A, 27 laser beam 7 beam switch 8, 28 Nd: YAG laser (laser source) 9 computer 10 stage 11 absorber 21, 40 β-FeSi ₂ semiconductor film 22 Linear focus position 23 Cylindrical lens 24 Lens 26 for making parallel rays 26 Expander lens 30 Fresnel lens 31, 32 part 33 Fresnel lens groove 41A, 41B point 42 Arc-shaped metal part

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Yasuhiko Nakayama             1-41 Keyakidaira, Miyamae-ku, Kawasaki City, Kanagawa Prefecture             103 F-term (reference) 4M104 AA01 BB19 DD81 DD88                 5F033 HH25 LL06 PP31 QQ52 QQ83

Claims (8)

[Claims] 1. A method for forming an electrode of a semiconductor β-FeSi ₂ element, the method comprising forming the β-FeS in an atmosphere or an inert gas atmosphere.
The β ₂ -FeSi ₂ material undergoes a phase transition to the α-Fe ₂ Si ₅ metal phase by heating all or a part of the i ₂ material surface portion, and then the phase transition portion is cooled and returned to room temperature. When making the electrode with good conductivity by applying a heating source to a point on the surface of the sample placed on the stage, α-Fe ₂
The place to be converted to Si ₅ phase and to be heated next is not to be the adjacent place where it is connected, but the heating source is moved to one point at a position far away from the heat so that the heat does not spread, and in the meantime, cooling of the previously heated point is performed. According to the method, heating / metallization is performed by contacting a point already cooled and then applying a heating source, and a desired electrode pattern is formed by connecting metallized portions while repeating the heating / cooling operation. Β-F
Method for forming electrode of eSi ₂ element. 2. A method for forming an electrode of a semiconductor β-FeSi ₂ element, the method comprising forming the β-FeS in an atmosphere or an inert gas atmosphere.
All or part of the surface of the i ₂ material is heated to cause a phase transition to the α-Fe ₂ Si ₅ metal phase, and then the phase-transitioned portion is cooled and returned to room temperature to form an electrode having good conductivity. In doing so, after expanding the laser light with a beam expander and making it a parallel light beam using a lens, the beam is condensed into a thin linear shape using a cylindrical lens,
A method for forming an electrode of a β-FeSi ₂ element, characterized by placing a β-FeSi ₂ material at the linear focal position and heating it to form an α-Fe ₂ Si ₅ metal phase to form a linear electrode pattern. . 3. The method for forming an electrode of a β-FeSi ₂ element according to claim 2, wherein the cylindrical lens is used as a lens of a beam expander that expands the laser light, so that a straight line when condensed in a straight line is formed. A method for forming an electrode of a β-FeSi ₂ device, characterized in that it is configured so that the uniform power distribution is uniform. 4. A method for forming an electrode of a semiconductor β-FeSi ₂ element, the method comprising forming the β-FeS in an atmosphere or an inert gas atmosphere.
All or part of the surface of the i ₂ material is heated to cause a phase transition to the α-Fe ₂ Si ₅ metal phase, and then the phase-transitioned portion is cooled and returned to room temperature to form an electrode having good conductivity. In doing so, the laser beam is expanded by a beam expander, and after being made into parallel rays using a lens, the β-FeSi ₂ material surface is irradiated and heated by using a Fresnel lens such that the image formation at the focus becomes an arc, A method for forming an electrode of a β-FeSi ₂ element, characterized in that the irradiation and heating portion is made into an α-Fe ₂ Si ₅ metal phase to form an arc-shaped electrode pattern. 5. An electrode forming apparatus for a semiconductor β-FeSi ₂ element, comprising: (a) means for heating all or part of the surface portion of the β-FeSi ₂ material in the atmosphere or an inert gas atmosphere; b) The heating means causes the β-FeSi ₂ material to undergo a phase transition to an α-Fe ₂ Si ₅ metallic phase, and then the phase transition portion is cooled,
When returning to room temperature and making it an electrode with good conductivity, apply a heating source to a point on the surface of the sample placed on the stage to make α-Fe ₂ Si
₅ phases, and then the place to be heated is not in the adjacent place where it is connected, but by moving the heating source to one point at a position that is far enough so that heat does not spread, and heating it while cooling the previously heated point. Forming a desired electrode pattern by connecting the metallized portions while repeating the heating / cooling operation by contacting a point already cooled and then applying a heating source. An electrode forming apparatus for a β-FeSi ₂ element, characterized by: 6. An electrode forming apparatus for a semiconductor β-FeSi ₂ element, comprising: (a) means for heating all or part of the surface portion of the β-FeSi ₂ material in the atmosphere or an inert gas atmosphere; b) The β-FeSi ₂ material undergoes a phase transition to the α-Fe ₂ Si ₅ metal phase by the heating means, and then the phase transition portion is cooled and returned to room temperature to form an electrode having good conductivity. When expanding, a beam expander for expanding the laser beam, and (c) a cylindrical lens for converging the laser beam expanded by the beam expander into parallel rays by using a lens And (d) placing a β-FeSi ₂ material at a linear focus position of the cylindrical lens and heating it to form an α-Fe ₂ Si ₅ metal phase to form a linear electrode pattern. Do Electrode forming device for β-FeSi ₂ element. 7. The electrode forming apparatus for a β-FeSi ₂ element according to claim 6, wherein the cylindrical lens is provided as a lens of a beam expander that expands the laser light, and a linear shape when linearly condensed. Β-FeSi characterized by being configured to have a uniform power distribution
_Two- element electrode forming device. 8. An electrode forming apparatus for a semiconductor β-FeSi ₂ element, comprising: (a) means for heating all or a part of the surface portion of the β-FeSi ₂ material in the atmosphere or an inert gas atmosphere; b) The β-FeSi ₂ material undergoes a phase transition to an α-Fe ₂ Si ₅ metal phase by the heating means, and then the phase transition portion is cooled and returned to room temperature to form an electrode having good conductivity. At this time, a beam expander that expands the laser light, and (c) a Fresnel lens that forms a laser beam expanded by the beam expander into parallel rays using a lens and then forms an arc at the focal point (D) β-F using the Fresnel lens
The surface of the eSi ₂ material is irradiated and heated, and the portion of the irradiated and heated is α
An electrode forming apparatus for a β-FeSi ₂ element, which is characterized in that an arc-shaped electrode pattern is formed by metalizing —Fe ₂ Si ₅ metal.