JP2003015099A - Electro-optical device, electronic apparatus, and method of manufacturing electro-optical device - Google Patents

Abstract

[PROBLEMS] To provide an electro-optical device which does not generate a scum caused by scattering of a photosensitive resin when a substrate is cut and a crack in a photosensitive resin layer in an image display area, and an electronic apparatus including the same. And a method for manufacturing an electro-optical device. SOLUTION: In a liquid crystal device 100, in an image display area 10a of a TFT array substrate 10, a concave / convex forming layer 13a made of a photosensitive resin and an upper layer film 7a are formed below a light reflecting film 8a. The photosensitive resin does not remain in the margin 120 and the scribe area 110. For this reason, when the TFT array substrate 10 is cut out from a large-sized substrate, the stress is applied to the unevenness forming layer 13
a and the upper film 7a. Also, the cutting allowance 120
Since no photosensitive resin is formed on the substrate, the photosensitive resin does not scatter during cutting.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electro-optical device in which an electro-optical material is held on a substrate, an electronic device using the electro-optical device,
And a method for manufacturing an electro-optical device.

[0002]

2. Description of the Related Art Electro-optical devices such as liquid crystal devices are used as direct-view type or projection type display devices for various equipment. In such an electro-optical device, for example, in a liquid crystal device, as shown in FIG. 17, a TFT array substrate 10 and a counter substrate 20 which are opposed to each other are bonded by a sealing material 52, and a seal is provided between the substrates. The liquid crystal 50 as an electro-optical material is held in the area defined by the material 52.

Such a liquid crystal device 100 generally has a T
After forming various constituent elements on a large substrate capable of taking a large number of FT array substrates 10 and counter substrates 20, a large panel structure is formed by bonding the large substrates to each other with a sealing material 52, and thereafter, A large panel structure is cut into the size of a single liquid crystal device 100. Regarding the structure therefor, in FIG. 17, when cutting a large panel structure, a scribe area 110 into which a cutting blade enters is indicated by a chain double-dashed line L22, and an area adjacent to the scribe area 110 is cut out as a single liquid crystal device 100. One-dot chain line L21
It is indicated by. In addition, a cutting margin 12 having a predetermined width dimension is provided between the region where the sealing material 52 is formed and the scribe region 110.
0 is secured.

Further, in the reflective or semi-transmissive / semi-reflective active matrix type liquid crystal device 100, the TFT is
Light reflection for reflecting the external light incident from the counter substrate 20 side to the image display region 10a in the region defined by the sealant 52 on the surface of the array substrate 10 toward the counter substrate 20. The film 8a is formed on the lower layer side of the transparent pixel electrode 9a, and allows the light incident from the counter substrate 20 side to pass through the TF.
An image is displayed by the light reflected from the T array substrate 10 side and emitted from the counter substrate 10 side.

In such a reflective or semi-transmissive / semi-reflective liquid crystal device 100, if the directionality of the light reflected by the light reflecting film 8a is strong, the viewing angle such that the brightness varies depending on the angle at which the image is viewed. Dependency becomes noticeable. Therefore, conventionally, when manufacturing the liquid crystal device 100, as shown in FIG. 18A, a first photosensitive resin 13 such as an acrylic resin is formed on the surface of the second interlayer insulating film 5 (surface protective film). After being applied thickly, the first photosensitive resin 13 is exposed to light through the exposure mask 510 and development baking is performed, so that the state shown in FIG.
As shown in (B), the unevenness forming layer 13a having a predetermined pattern
And a concave-convex pattern 8g is formed on the surface of the light reflecting film 8a formed on the upper side (see FIG. 17).
Further, as shown in FIG. 18C, a second photosensitive resin layer 7 such as an acrylic resin is also applied on the upper layer side of the concavo-convex forming layer 13a, and then the second photosensitive resin layer 7 is exposed through the exposure mask 520 '. 18 is exposed to light and developed.
As shown in (D), an upper layer film 7a having a contact hole is formed, and as shown in FIG.
The edges and the like are prevented from appearing in the uneven pattern 8g.

Here, the first photosensitive resin 13 used for the concavo-convex forming layer 13a and the second photosensitive resin 7 used for the upper layer film 7a are the same as those in the prior art, FIG. 17, and FIG.
As shown in (B) and (D), it is also formed in the entire area outside the image display area 10a. Therefore, the organic insulating film such as the first photosensitive resin 13 and the second photosensitive resin 7 is also formed in the scribe region 110 and the cutting margin 120 when the large panel structure is cut into the size of the single liquid crystal device 100. Since they are laminated, the organic insulating film is also cut together in the cutting process for a large panel structure.

[0007]

However, like the conventional liquid crystal device 100, the scribe region 110 and the cutting allowance 12 when cutting a large panel structure (large substrate).
When the organic insulating film such as the first photosensitive resin 13 and the second photosensitive resin 7 is left at 0, the stress at the time of cutting causes the organic insulating film formed in the scribe region 110 and the cutting margin 120. There is a problem that cracks are generated by being transmitted from the film to the concavo-convex forming layer 13a and the upper film 7a formed in the image display region 10a. Here, the unevenness forming layer 1
The first photosensitive resin 13 and the second photosensitive resin 7 forming the upper layer film 3a and the third photosensitive resin 7a are the pixel switching TFTs 30.
Since it is also used as an interlayer insulating film in
When such cracks occur, the reliability of the liquid crystal device 100 is reduced, which is not preferable. Further, if an organic insulating film such as the first photosensitive resin 13 and the second photosensitive resin 7 is formed in the scribe region 110 and the cutting margin 120, the organic insulating film scatters during cutting and scum is generated. There are also problems.

In view of the above problems, the object of the present invention is to:
Even when a photosensitive resin layer is formed on the substrate that holds the electro-optical material, scum caused by the scattering of the photosensitive resin does not occur when the substrate is cut, and the photosensitive resin layer in the image display area is not generated. Electro-optical device that does not crack
An object of the present invention is to provide an electronic device including the same and a method for manufacturing an electro-optical device.

[0009]

In order to solve the above-mentioned problems, in the present invention, a photosensitive resin layer is provided in an inner area and an outer area of an image display area of a surface of a substrate holding an electro-optical material. In an electro-optical device including a plurality of laminated layers, the photosensitive resin layer formed in an area outside the image display area is connected to the photosensitive resin layer formed in the image display area. The present portion is formed so as to avoid the outer peripheral edge region of the substrate.

According to the present invention, a plurality of layers including a photosensitive resin layer are formed on the surface of a large substrate from which a single substrate holding an electro-optical material is cut out, and then the large substrate is cut to form the single substrate. In the method of manufacturing an electro-optical device to be obtained, in the step of forming the photosensitive resin layer on the surface of the large-sized substrate, among the photosensitive resin layers formed outside the area corresponding to the image display area of the single-piece substrate, the image Regarding the part connected to the photosensitive resin layer formed in the display area,
It is characterized in that it is formed so as to avoid the outer peripheral region of the region cut out as the single substrate.

In the present invention, the photosensitive resin layer connected to the photosensitive resin layer formed in the image display area remains in the cutting margin secured in the outer peripheral area of the area cut out as a single substrate. Therefore, when a single substrate is cut out, the stress applied to the cutting margin is not transmitted to the photosensitive resin layer in the image display area. Therefore, cracks do not occur in the photosensitive resin layer formed in the image display area, and the reliability of the electro-optical device can be improved. Further, since the photosensitive resin is not formed over a wide range in the cutting margin, it is possible to solve the problem that the organic insulating film scatters at the time of cutting and scum is generated.

In the present invention, of the photosensitive resin layer formed in the area outside the image display area, a portion connected to the photosensitive resin layer formed in the image display area is formed on the single substrate. When forming so as to avoid the outer peripheral edge region, all of the photosensitive resin layer is formed so as to avoid the outer peripheral edge region of the single-piece substrate. In this case, only the inorganic insulating film is formed in the outer peripheral region of the single-piece substrate.

In the present invention, a portion of the photosensitive resin layer formed in the area outside the image display area, which is connected to the photosensitive resin layer formed in the image display area, is connected to the single substrate. When forming so as to avoid the outer peripheral edge area, a photosensitive resin layer may be formed in the outer peripheral edge area of the single-piece substrate, but this photosensitive resin layer is formed in the image display area. It is formed in a state of being separated from the photosensitive resin layer.

In the present invention, the case of forming the photosensitive resin layer on the outer peripheral edge region of the single-piece substrate is, for example, an alignment for aligning the substrate with the outer peripheral edge region of the single-piece substrate by a photosensitive resin. This is a case where a mark or the like is formed.

In the present invention, the width dimension of the outer peripheral region is set to a cutting allowance when a single substrate is cut out from a large substrate.

In the present invention, a light reflection film for reflecting light incident on the front surface side of the substrate may be formed in the image display area on the single substrate, and in such a case, The photosensitive resin layer is formed, for example, as a concavo-convex forming layer on the lower layer side of the light reflecting film, which provides a concavo-convex pattern for light scattering on the surface of the light reflecting film.

In the present invention, a light reflection film for reflecting light incident on the front surface side of the substrate may be formed in the image display area on the single substrate, and in such a case, The photosensitive resin layer is, for example, a concavo-convex forming layer that provides a concavo-convex pattern for light scattering on the surface of the light reflecting film on the lower side of the light reflecting film, and an upper layer film that covers the surface side of the concavo-convex forming layer. Formed as.

In the present invention, the electro-optical material is, for example, liquid crystal. In this case, the single substrate is used as a first substrate, and a second substrate is arranged so as to face the first substrate to hold liquid crystal as the electro-optical substance between the substrates.

The electro-optical device to which the present invention is applied can be used as a display device for electronic devices such as mobile phones and mobile computers.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described with reference to the drawings.

(Basic Structure of Electro-Optical Device) FIG.
FIG. 2 is a plan view of a liquid crystal device as an electro-optical device to which the present invention is applied, viewed from the counter substrate side together with each component, and FIG. 2 is a sectional view taken along line HH ′ of FIG. 1. FIG. 3 is an equivalent circuit diagram of various elements and wirings in a plurality of pixels formed in a matrix in the image display area of the liquid crystal device.
Since the basic configuration of the liquid crystal device to which the present invention is applied is the same as that described with reference to FIGS. 17 and 18, parts having common functions are designated by the same reference numerals and described. To do. Further, in each drawing used for the description of the present embodiment, each layer and each member have different scales so that each layer and each member have a size that can be recognized in the drawing.

In FIG. 1 and FIG. 2, the liquid crystal device 100 (electro-optical device) of this embodiment is a TFT array substrate 10.
The (first substrate) and the counter substrate 20 (second substrate) are adhered to each other by the sealing material 52, and the liquid crystal 50 serving as an electro-optical substance is provided in a region (liquid crystal enclosed region) partitioned by the sealing material 52. Are pinched. Seal material 52
A peripheral parting line 53 made of a light-shielding material is formed in the inside region of the formation region of the, and the inside region of the peripheral parting line 53 is the image display region 10a.

In this embodiment, the data line driving circuit 101 and the mounting terminal 10 are utilized by utilizing the outer region of the sealing material 52.
2 are formed along one side of the TFT array substrate 10, and the scanning line driving circuit 104 is formed on the two sides adjacent to the one side by utilizing the region between the image display region 10a and the sealing material 52. Has been done. TFT array substrate 10
On the remaining side, a plurality of wirings 105 for connecting between the scanning line driving circuits 104 provided on both sides of the image display area 10a pass through the lower layer side of the sealing material 52. In addition, a precharge circuit or a test circuit may be provided using the lower layer side of the peripheral parting line 53 and the like. In addition, TF is provided at least at one of the corners of the counter substrate 20.
An inter-substrate conductive material 106 is formed to establish electrical conduction between the T array substrate 10 and the counter substrate 20.

Instead of forming the data line driving circuit 101 and the scanning line driving circuit 104 on the TFT array substrate 10, for example, a TA on which a driving LSI is mounted is mounted.
A B (tape automated, bonding) substrate may be electrically and mechanically connected to a terminal group formed on the periphery of the TFT array substrate 10 via an anisotropic conductive film. In the liquid crystal device 100, depending on the type of the liquid crystal 50 used, that is, an operation mode such as a TN (twisted nematic) mode or an STN (super TN) mode, or a normally white mode / a normally black mode, Although a film, a retardation film, a polarizing plate, etc. are arranged in a predetermined direction, they are not shown here.

When the liquid crystal device 100 is configured for color display, an RGB color filter is provided in a region of the counter substrate 20 facing each pixel electrode (to be described later) of the TFT array substrate 10 together with its protective film. Form.

In the liquid crystal device 100, the image display area 1
0a, a plurality of pixels 100a are arranged in a matrix as shown in FIG.
00a, a pixel electrode 9a and a pixel switching TFT 30 for driving the pixel electrode 9a.
Are formed, and the data line 6a for supplying the pixel signals S1, S2 ... Sn is electrically connected to the source of the TFT 30. Pixel signal S written in the data line 6a
1, S2 ... Sn may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. Also, T
The scanning line 3a is electrically connected to the gate of the FT 30, and is configured to apply the scanning signals G1, G2 ... Gm to the scanning line 3a in a pulse-wise manner in this order at a predetermined timing. ing. The pixel electrode 9a is the TFT 30
Of the pixel signal S supplied from the data line 6a by electrically connecting the TFT 30, which is a switching element, to the ON state for a certain period.
1, S2 ... Sn are written in each pixel at a predetermined timing. In this way, the pixel signals S1, S2, ... Sn of a predetermined level written in the liquid crystal through the pixel electrode 9a.
Are held for a certain period of time with the counter electrode 21 of the counter substrate 20 shown in FIG.

Here, in the liquid crystal 50, the orientation and order of the molecular assembly are changed by the applied voltage level,
Modulates light and enables gradation display. In the normally white mode, the amount of incident light passing through the liquid crystal 50 portion decreases according to the applied voltage, and in the normally black mode, the incident light changes according to the applied voltage. The amount of light passing through the liquid crystal 50 increases. As a result, light having a contrast according to the pixel signals S1, S2, ... Sn is emitted from the liquid crystal device 100 as a whole.

The held pixel signals S1, S2, ...
.. In order to prevent Sn from leaking, the storage capacitor 60 may be added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. For example, the voltage of the pixel electrode 9a is held by the storage capacitor 60 for a time that is three orders of magnitude longer than the time when the source voltage is applied. As a result, the charge retention characteristics are improved, and the liquid crystal device 100 having a high contrast ratio can be realized. As a method of forming the storage capacitor 60, as shown in FIG. 3, when the storage capacitor 60 is formed between the storage capacitor 60 and the capacitance line 3b, which is a wiring for forming the storage capacitor 60, or when it is formed with the preceding scanning line 3a. Either may be formed between them.

(Structure of TFT Array Substrate) FIG. 4 is a plan view of a plurality of pixel groups adjacent to each other on the TFT array substrate 10 used in the liquid crystal device 100 of this embodiment. FIG. 5 is a cross-sectional view when a part of the pixels of the liquid crystal device 100 is cut at a position corresponding to the line AA ′ in FIG. FIG. 6 is a cross-sectional view near the end of the liquid crystal device 100 of this embodiment.

In FIG. 4, a plurality of transparent ITO (Indium Tin Ox) are formed on the TFT array substrate 10.
The pixel electrodes 9a made of a (ide) film are formed in a matrix, and the pixel switching TFTs 30 are connected to the respective pixel electrodes 9a. Also,
The data line 6a, the scanning line 3a, and the capacitance line 3b are formed along the vertical and horizontal boundaries of the pixel electrode 9a, and the TFT 30
Are connected to the data line 6a and the scanning line 3a. That is, the data line 6a is electrically connected to the high concentration source region 1d of the TFT 30 via the contact hole, and the pixel electrode 9a is connected to the TFT via the contact hole.
3 is electrically connected to the high-concentration drain region 1e.
Further, the scanning line 3a extends so as to face the channel region 1a 'of the TFT 30. The storage capacitor 60 (storage capacitor element) has a lower electrode that is obtained by rendering the extended portion 1f of the semiconductor film 1 for forming the pixel switching TFT 30 conductive, and the lower electrode 41 has the same layer as the scanning line 3b. The capacitor line 3b has a structure overlapping as an upper electrode.

In each of the pixels 100a thus constructed, of the area where the pixel electrode 9a is formed, the area surrounded by the alternate long and short dash line 8'is a transmissive area for displaying in the transmissive mode and will be described later. The concavo-convex forming layer and the light reflecting film are not formed, and the other region is a reflecting region provided with the concavo-convex forming layer and the light reflecting film which will be described later, and display is performed in the reflection mode here.

As shown in FIG. 5, the cross section of the reflective region taken along the line AA 'is, as shown in FIG. 5, on the surface of the TFT array substrate 10, a base protective film made of a silicon oxide film (insulating film) having a thickness of 50 nm to 100 nm. 11 is formed, and an island-shaped semiconductor film 1a having a thickness of 50 nm to 100 nm is formed on the surface of the base protective film 11. A gate insulating film 2a made of a silicon oxide film having a thickness of about 50 to 100 nm is formed on the surface of the semiconductor film 1a, and a scan made of an aluminum film having a thickness of 500 nm to 1000 nm is formed on the surface of the gate insulating film 2a. The line 3a passes through as a gate electrode. The region of the semiconductor film 1a facing the scanning line 3a via the gate insulating film 2a is the channel region 1
It is a '. A source region including a low concentration source region 1b and a high concentration source region 1d is formed on one side of the channel region 1a ', and a drain including a low concentration drain region 1c and a high concentration drain region 1e is formed on the other side. A region is formed.

On the front surface side of the pixel switching TFT 30, a first interlayer insulating film 4 made of a silicon oxide film having a thickness of 300 nm to 800 nm and a thickness of 100 nm to 100 nm are formed.
Second interlayer insulating film 5 made of a 300 nm silicon nitride film
(Surface protection film) is formed. A data line 6a made of an aluminum film having a thickness of 500 nm to 1000 nm is formed on the surface of the first interlayer insulating film 4, and the data line 6a passes through a contact hole formed in the first interlayer insulating film 4. It is electrically connected to the high concentration source region 1d. A drain electrode 6b formed simultaneously with the data line 6a is formed on the surface of the first interlayer insulating film 4, and the drain electrode 6b is a high-concentration drain region via a contact hole formed in the first interlayer insulating film 4. It is electrically connected to 1e.

As will be described later, an unevenness forming layer 13a made of a photosensitive resin such as acrylic resin and an upper layer film 7a are formed in this order on the upper layer of the second interlayer insulating film 5, and the surface of this upper layer film 7a is formed. A light reflection film 8a made of an aluminum film or the like having a thickness of 50 nm to 200 nm is formed.

On the upper layer of the light reflecting film 8a, a transparent pixel electrode 9a made of an ITO film is formed. Pixel electrode 9a
Are laminated directly on the surface of the light reflection film 8a, and the pixel electrode 9
a and the light reflection film 8a are electrically connected. Also,
The pixel electrode 9a is a photosensitive resin layer forming the upper layer film 7a,
A photosensitive resin layer constituting the unevenness forming layer 13a, and a second
The drain electrode 6b is electrically connected through a contact hole formed in the interlayer insulating film 5.

An alignment film 12 made of a polyimide film is formed on the surface side of the pixel electrode 9a. This alignment film 12
Is a film obtained by rubbing a polyimide film.

Further, for the extended portion 1f (lower electrode) extending from the high-concentration drain region 1e, the scanning line 3a is formed through an insulating film (dielectric film) formed at the same time as the gate insulating film 2a.
The storage capacitor 60 is formed by the capacitance lines 3b in the same layer facing each other as upper electrodes.

The TFT 30 preferably has the LDD structure as described above, but has the offset structure in which the impurity ions are not implanted in the regions corresponding to the low concentration source region 1b and the low concentration drain region 1c. May be. Further, the TFT 30 may be a self-alignment type TFT in which high-concentration source and drain regions are formed in a self-aligned manner by implanting high-concentration impurity ions using the gate electrode (a part of the scanning line 3a) as a mask. .

Further, in the present embodiment, only one gate electrode (scanning line 3a) of the TFT 30 is arranged between the source and drain regions, but two or more gate electrodes are arranged between them. You may. At this time, the same signal is applied to each gate electrode.
By configuring the TFT 30 with a dual gate (double gate) or a triple gate or more in this way, it is possible to prevent a leak current at the junction between the channel and the source-drain region, and reduce the off-time current. If at least one of these gate electrodes has an LDD structure or an offset structure, the off current can be further reduced, and a stable switching element can be obtained.

(Concavo-convex pattern and structure of end portion) FIG.
FIG. 4 is an explanatory diagram showing a method of manufacturing a liquid crystal device by cutting out a large-sized panel structure having a large-sized substrate attached thereto into a single piece size.

As shown in FIGS. 5 and 6, in each pixel 100a in the image display area 10a of the TFT array substrate 10, an area (light reflection area) of the surface of the light reflection film 8a which is outside the area where the TFT 30 is formed. Film formation area / see FIG. 4),
An uneven pattern 8g having convex portions 8b and concave portions 8c is formed.

To form such a concavo-convex pattern 8g, in the TFT array substrate 10 of this embodiment, an acrylic resin or the like is formed in a region of the lower layer side of the light reflection film 8a, which overlaps the light reflection film 8a in a plane. A concavo-convex forming layer 13a made of a photosensitive resin is formed thick on the surface of the second interlayer insulating film 5, and an upper layer film 7a also made of a photosensitive resin such as an acrylic resin is formed as a second layer on the concavo-convex forming layer 13a. The resin layer is laminated thickly. Therefore, the light reflection film 8
An uneven pattern 8g is formed on the surface of a by unevenness caused by the presence or absence of the unevenness forming layer 13a. In this unevenness pattern 8g, the upper layer film 7a prevents the edges of the unevenness forming layer 13a from appearing. . The upper layer film 7
It may be formed only by the unevenness forming layer 13a without forming a.

Further, in this embodiment, the TFT array substrate 10
The unevenness forming layer 13a and the upper layer film 7a made of a photosensitive resin are formed on the image display area 10a on the surface of the above, but the unevenness forming layer 13a is also formed in the area outside the image display area 10a. The first photosensitive resin 13 and the second photosensitive resin 7 forming the upper layer film 7a are formed.

The liquid crystal device 100, as shown in FIG.
After forming various constituent elements on a large substrate capable of taking a large number of FT array substrates 10 and counter substrates 20, a large panel structure is formed by bonding the large substrates to each other with a sealing material 52, and thereafter, The large panel structure is cut into the size of the single liquid crystal device 100. Therefore, in the boundary region of each region cut out as the single liquid crystal device 100 in the large panel structure (large substrate), the scribe region 110 in which the cutting blade is inserted is 100 μm or more.
It is secured with a width of 150 μm. In addition, in the outer peripheral region of each region cut out as a single liquid crystal device 100,
A cutting allowance 1 is provided between the seal material 52 and the scribe area 110.
20 is secured in a width of 50 μm to 100 μm. In this state, in FIG. 6, the scribe area 110 in which the cutting blade enters is indicated by a two-dot chain line L22, and an area adjacent to the scribe area 110 is cut out as a single liquid crystal device 100 is indicated by a one-dot chain line L21.

The liquid crystal device 10 of the present embodiment configured as described above.
0, when manufacturing the TFT array substrate 10, the cutting allowance 120 secured in the outer peripheral edge region of the TFT array 10,
An organic insulating film such as the first photosensitive resin 13 used for the concavo-convex forming layer 13a and the second photosensitive resin 7 used for the upper layer film 7a is formed on both the scribe region 110 and the scribe region 110. Inorganic insulation such as a base protective film 11 made of a silicon oxide film, a gate insulating film 2 made of a silicon oxide film, a first interlayer insulating film 4 made of a silicon oxide film, and a second interlayer insulating film 5 made of a silicon nitride film. Membranes are only formed in multiple layers.

(Structure of Counter Substrate) In FIG. 5, the counter substrate 20 is referred to as a black matrix or a black stripe in a region facing the vertical and horizontal boundary regions of the pixel electrodes 9a formed on the TFT array substrate 10. The light shielding film 23 is formed, and the counter electrode 21 made of an ITO film is formed on the upper layer side thereof. Further, on the upper layer side of the counter electrode 21, an alignment film 22 made of a polyimide film is formed.
The alignment film 22 is formed by rubbing the polyimide film.

(Display Operation of Liquid Crystal Device 100) In the liquid crystal device 100 thus configured, the light reflecting film 8a made of an aluminum film or the like is formed below the pixel electrode 9a. For this reason, the light incident from the side of the counter substrate 20 is converted into TF.
Since the light can be reflected on the T array substrate 10 side and emitted from the counter substrate 20 side, if light modulation is performed for each pixel 100a by the liquid crystal 50 during this time, external light can be used to obtain a desired image in the image display region 10a. Images can be displayed (reflection mode).

In the liquid crystal device 100, the light reflection film 8a is arranged so as to avoid the area surrounded by the alternate long and short dash line 8'in FIG.
Since it is formed, it also functions as a semi-transmissive / semi-reflective liquid crystal device. That is, the light emitted from the backlight device (not shown) arranged on the TFT array substrate 10 side is incident on the TFT array substrate 10 side, and then the pixel electrode 9a is formed in each pixel 100a. Among the regions, the light is transmitted to the counter substrate 20 side through the transmissive region where the light reflection film 8a is not formed. Therefore, the liquid crystal 50
When the light modulation is performed for each pixel 100a by the image display area 10 using the light emitted from the backlight device.
A desired image can be displayed on a (transmission mode).

Further, in this embodiment, the unevenness forming layer 13a is formed in a region of the lower layer side of the light reflecting film 8a, which overlaps the light reflecting film 8a in plan view, and the unevenness formed by the unevenness forming layer 13a is used. Then, an uneven pattern 8g for light scattering is formed on the surface of the light reflection film 8a. Further, in the concavo-convex pattern 8g, the upper layer film 7a prevents the edges of the concavo-convex forming layer 13a from appearing. Therefore, when the image is displayed in the reflection mode, the image can be displayed by the scattered reflected light, so that the viewing angle dependency is small.

[Manufacturing Method of Liquid Crystal Device 100] Referring to FIGS. 8 to 12, T used in the liquid crystal device 100 of the present embodiment.
A method of manufacturing the FT array substrate 10 will be described. 8 to 12 are process cross-sectional views showing the method for manufacturing the TFT array substrate 10 of the present embodiment. In any of the drawings, the image display region 10a (pixel switching TFT
A cross section of a formation region, a light reflection film formation region), and an end portion of the substrate is shown. In addition, in FIG. 8 to FIG. 12, in order to show that various constituent elements are formed on a large-sized substrate capable of taking a large number of TFT array substrates 10, it is ensured between the regions cut out as the TFT array substrate 10. The scribe region 110 and the cutting margin 120 secured to the outer peripheral edge region of the region cut out as the TFT array substrate 10 with a predetermined width dimension are also shown.

First, as shown in FIG. 8 (A), after preparing a large substrate 10 'made of glass or the like which has been cleaned by ultrasonic cleaning or the like, under the temperature condition of the substrate temperature of 150 ° C to 450 ° C, A base protective film 11 made of a silicon oxide film is formed on the entire surface of the large-sized substrate 10 'by a plasma CVD method to a thickness of 50 nm to 1 nm.
It is formed to a thickness of 00 nm. The raw material gas at this time is, for example, a mixed gas of monosilane and laughing gas or TE.
OS and oxygen, or disilane and ammonia can be used.

Next, under the temperature condition of the substrate temperature of 150 ° C. to 450 ° C., the semiconductor film 1 made of an amorphous silicon film is formed on the entire surface of the large-sized substrate 10 ′ by the LP-CVD method.
It is formed to a thickness of 0 nm to 100 nm. Next, the semiconductor film 1 is irradiated with laser light to perform laser annealing.
As a result, the amorphous semiconductor film 1 melts once,
It crystallizes through a cooling and solidification process. At this time, the irradiation time of the laser beam to each area is very short, and the irradiation area is local to the entire substrate, so that the entire substrate is not heated to a high temperature at the same time. Therefore, even if a glass substrate or the like is used as the large substrate 10 ', deformation or cracking due to heat does not occur.

Next, a resist mask 551 is formed on the surface of the semiconductor film 1 by using a photolithography technique, and the semiconductor film 1 is etched through the resist mask 551, as shown in FIG. 8B. The island-shaped semiconductor film 1a (active layer) is left in a predetermined area of the image display area 10a. At this time, the cutting allowance 120 and the scribe area 11
The semiconductor film 1 is not left at 0.

Next, under a temperature condition of 350 ° C. or lower, a gate insulating film 2 made of a silicon oxide film or the like is formed on the entire surface of the large-sized substrate 10 ′ by a CVD method or the like to have a thickness of 50 nm to 100 nm.
To the thickness of. The source gas at this time is, for example, T
A mixed gas of EOS and oxygen gas can be used.
The gate insulating film 2 formed here may be a silicon nitride film instead of the silicon oxide film.

Next, although not shown in the drawings, impurity ions are implanted into the extended portion 1f of the semiconductor film 1a through a predetermined resist mask to form a storage capacitor 60 between the capacitor line 3b and the capacitor line 3b. Form electrodes.

Next, as shown in FIG. 8C, a conductive film 3 made of an aluminum film or the like for forming the scanning lines 3a is formed on the entire surface of the large-sized substrate 10 'by a sputtering method or the like to have a thickness of 500 nm to 1000 nm. Then, a resist mask 552 is formed using a photolithography technique.

Next, the conductive film 3 is dry-etched through the resist mask 552, and as shown in FIG.
The scanning line 3a (gate electrode), the capacitance line 3b, etc. are formed. At this time, the wiring 1 is placed in the application area of the sealing material 52.
The conductive film 3c for forming 05 is left. However, the conductive film 3 is not left in the cutting margin 120 or the scribe region 110.

Next, on the side of the pixel TFT section and the N-channel TFT section (not shown) of the drive circuit, using the scanning line 3a and the gate electrode as a mask, about 0.1 × 10 ¹³ / cm ² 〜.
By implanting low-concentration impurity ions (phosphorus ions) at a dose of about 10 × 10 ¹³ / cm ² , the low-concentration source region 1b and the low-concentration drain region 1c are formed in a self-aligned manner with respect to the scanning line 3a. Here, since it is located directly below the scanning line 3a, the portion into which the impurity ions are not introduced becomes the channel region 1a 'which remains the semiconductor film 1a.

Next, as shown in FIG. 9A, the pixel TF
At the T portion, a resist mask 553 wider than the scanning line 3a (gate electrode) is formed to add high concentration impurity ions (phosphorus ions) to about 0.1 × 10 ¹⁵ / cm ² to about 10 × 10 5.
Implanting with a dose amount of ¹⁵ / cm ² and high-concentration source region 1
b and the drain region 1d are formed.

Instead of these impurity introduction steps, a high-concentration impurity (phosphorus ion) is implanted in a state where a low-concentration impurity is not implanted and a resist mask wider than the gate electrode is formed, and the source region of the offset structure is formed. And the drain region may be formed. Further, it goes without saying that a source region and a drain region having a self-aligned structure may be formed by implanting a high-concentration impurity using the scanning line 3a as a mask.

Although not shown, the N-channel TFT portion of the peripheral drive circuit portion is formed by such a process, but at this time, the P-channel TFT portion is covered with a mask. Further, when forming the P-channel TFT portion of the peripheral drive circuit, the pixel portion and the N-channel TFT portion are covered and protected with a resist, and the gate electrode is used as a mask to form about 0.1 × 10 ¹⁵ / cm ² to about By implanting boron ions with a dose amount of 10 × 10 ¹⁵ / cm ² , P-channel source / drain regions are formed in a self-aligned manner. At this time, as in the case of forming the N-channel TFT section, the gate electrode is used as a mask to form about 0.1 × 10 ¹³ / cm ² to about 10 ×
A low-concentration impurity (boron ion) is introduced at a dose amount of 10 ¹³ / cm ² to form a low-concentration region in the polysilicon film, and then a mask wider than the gate electrode is formed to form a high-concentration impurity (boron ion). Boron ion) about 0.1 × 10 ¹⁵ / cm
² to about 10 × 10 ¹⁵ / cm ^{2 with} a dose amount,
The source region and the drain region of the LDD structure (lightly doped drain structure) may be formed. Alternatively, the source region and the drain region of the offset structure may be formed by implanting a high-concentration impurity (phosphorus ion) in a state where a mask wider than the gate electrode is formed without implanting a low-concentration impurity. By these ion implantation steps, CMOS can be realized and the peripheral drive circuit can be built in the same substrate.

Next, as shown in FIG. 8B, a first interlayer insulating film 4 made of a silicon oxide film or the like is formed on the entire surface of the large substrate 10 'by a CVD method or the like to a thickness of 300 nm to 800 nm.
To the thickness of. The source gas at this time is, for example, T
A mixed gas of EOS and oxygen gas can be used.

Next, a resist mask 554 is formed by using the photolithography technique.

Next, through the resist mask 554, the first
By dry etching the interlayer insulating film 4, as shown in FIG. 9C, contact holes are formed in portions of the first interlayer insulating film 4 corresponding to the source region and the drain region, a portion where the wiring 105 is formed, and the like. Form. At this time, the cutting allowance 120 and the scribe area 110
The first interlayer insulating film 4 is left as it is.

Next, as shown in FIG. 9D, a conductive film 6 made of an aluminum film or the like for forming the data line 6a (source electrode) or the like is formed on the surface side of the first interlayer insulating film 4.
Is formed to a thickness of 500 nm to 1000 nm by a sputtering method or the like, and then a resist mask 555 is formed by using a photolithography technique.

Next, the conductive film 6 is dry-etched through the resist mask 555 to form the data line 6a and the drain electrode 6b as shown in FIG. At this time, the wiring 1 is placed in the application area of the sealing material 52.
The conductive film 6c for forming 05 is left. However, the conductive film 6 is not left in the cutting margin 120 or the scribe region 110.

Next, as shown in FIG. 10B, a second interlayer insulating film 5 made of a silicon nitride film or the like is formed on the entire surface of the large substrate 10 'by a CVD method or the like to a thickness of 100 nm to 300 n.
After being formed to a film thickness of m, a resist mask 556 for forming a contact hole or the like is formed in the second interlayer insulating film 5 by using a photolithography technique.

Next, a second mask is formed through the resist mask 556.
Dry etching is performed on the inter-layer insulating film 5, and then, as shown in FIG.
As shown in, a contact hole is formed in a portion of the second interlayer insulating film 5 corresponding to the drain electrode 14. At this time, the second interlayer insulating film 5 is left in the cutting margin 120 and the scribe region 110.

Next, as shown in FIG. 11A, a first photosensitive resin 13 such as an acrylic resin is applied to the entire surface of the large-sized substrate 10 ′ to a thickness of 2 μm to 3 μm, and then the photosensitive resin 13 is applied. By patterning using a photolithography technique, as shown in FIG. 11B, the concavo-convex forming layer 13a is formed on the lower layer side of the light reflection film 8a in a region that planarly overlaps with the light reflection film 8a. . At this time, the photosensitive resin 13 is left in the area where the sealing material 52 is to be applied, but the photosensitive resin 13 is not left in the cutting margin 120 and the scribe area 110.

When the concavo-convex forming layer 13a is formed by using such a photolithography technique, either a negative type or a positive type may be used as the photosensitive resin 13. However, in FIG. The case of the positive type is illustrated as the resin 13, and the portion where the photosensitive resin 13 is to be removed is irradiated with ultraviolet rays through the light transmitting portion 511 of the exposure mask 510.

Next, as shown in FIG. 11C, a second photosensitive resin 7 made of acrylic resin is formed to a thickness of 1 μm to 2 μm on the surface side of the second interlayer insulating film 5 and the concavo-convex forming layer 13a. After the application, the photosensitive resin 7 is patterned by using the photolithography technique.
As shown in (D), an upper layer film 7a having a contact hole is formed. At this time, the photosensitive resin 7 is left in the area where the sealing material 52 is to be applied, but the photosensitive resin 7 is not left in the cutting margin 120 and the scribe area 110.

When the upper layer film 7a is formed by using such a photolithography technique, either a negative type or a positive type may be used as the photosensitive resin 7. However, in FIG. The case where the resin 7 is a positive type is shown as an example, and the portion where the photosensitive resin 7 is to be removed is irradiated with ultraviolet rays through the light transmitting portion 521 of the exposure mask 520.

Here, since the upper layer film 7a is formed of a resin material having fluidity, the upper layer film 7a appropriately cancels the unevenness of the unevenness forming layer 13a. Therefore, on the surface of the light reflection film 8a which will be formed later, the uneven pattern 8g having no edge and having a smooth shape is formed. The upper layer film 7
It is also possible to use only the concavo-convex pattern 8g without forming a.

Next, as shown in FIG. 12A, 500 n of a metal film 8 having a reflectivity such as an aluminum film is formed on the entire surface of the large-sized substrate 10 'by a sputtering method or the like.
After forming to a thickness of m to 1000 nm, a resist mask 557 is formed using a photolithography technique.

Next, the metal film 8 is etched through the resist mask 557, and as shown in FIG.
The light reflecting film 8a is left in a predetermined area. On the surface of the light reflection film 8a thus formed, the concavo-convex pattern 8g of 500 nm or more, further 800 nm or more is formed by the concavo-convex forming layer 13a, and the concavo-convex pattern 8g is formed.
Has a gentle shape with no edges due to the upper layer film 7a. At this time, the metal film 8 is not left on the cutting margin 120 or the scribe region 110.

Next, as shown in FIG. 12C, IT having a thickness of 40 nm to 200 nm is provided on the surface side of the light reflecting film 8a.
After forming the O film 9 by a sputtering method or the like, a resist mask 558 is formed by using a photolithography technique.

Next, IT is performed through the resist mask 558.
By etching the O film 9, as shown in FIG. 12D, the pixel electrode 9a electrically connected to the drain electrode 6b is formed.
To form. At this time, the cutting allowance 120 and the scribe area 1
No ITO 9 is left in 10.

Thereafter, as shown in FIG. 5, a polyimide film (alignment film 12) is formed on the surface side of the pixel electrode 9a. To this end, a polyimide varnish prepared by dissolving 5 to 10% by weight of polyimide or polyamic acid in a solvent such as butyl cellosolve or n-methylpyrrolidone is flexographically printed, and then heated and cured (baked). Then, the substrate on which the polyimide film is formed is rubbed in a certain direction with a puff cloth made of rayon fibers to arrange the polyimide molecules in a certain direction near the surface. As a result, the liquid crystal molecules are aligned in a certain direction due to the interaction between the liquid crystal molecules filled later and the polyimide molecules.

As a result, a large substrate 10 'capable of taking a large number of TFT array substrates 10 is completed.

With respect to the large-sized substrate 10 'manufactured in this manner, a large-sized substrate capable of taking a large number of counter substrates 20 is bonded to the large-sized substrate 10 with a sealing material 52 to form a large-sized panel structure. Cut the structure into single piece sizes. In this cutting step, the scribe area 1 is formed on the large-sized substrate 10 'from which the TFT array substrate 10 is cut out of the large-sized panel structure (large-sized substrate 10').
After forming a scribe groove by inserting a cutting blade along 10, a stress is applied from the large substrate from which the counter substrate 20 is cut out to cut the large substrate 10 'for the TFT array substrate along the scribe groove. Next, after a cutting blade is formed along the scribe region 110 to form a scribe groove on the substrate from which the counter substrate 20 is cut out, stress is applied from the large substrate 10 ′ for the TFT array substrate 10 to face the substrate. A large substrate for the substrate 20 is cut along the scribe groove. In the cutting step, a large panel structure may be cut by irradiating a scribe area with a laser spot instead of using a cutting blade.

In such a cutting process, the large substrate 1
In 0 ′, the cutting margin 120 secured in the outer peripheral region of the region cut out as the TFT array substrate 10 and the scribe region 110 include the first photosensitive resin 13 used for the unevenness forming layer 13a and the upper layer. The organic insulating film such as the second photosensitive resin 7 used for the film 7 is not formed, and the base protective film 11, the gate insulating film 2, the first interlayer insulating film 4, and the second interlayer insulating film 5 The above-mentioned inorganic insulating film is simply formed as a multilayer. Therefore, the photosensitive resins 7 and 13 are formed in the area outside the image display area 10a such as the area where the sealing material 52 is to be applied, and the photosensitive resins 7 and 13 are the photosensitive resin layers (upper layer) in the image display area 10a. Although it is connected to the film 7a and the unevenness forming layer 13a), TF
In the outer peripheral region (cutting margin 120) of the T array substrate 10,
The photosensitive resin connected to the photosensitive resin layer (upper layer film 7a, unevenness forming layer 13a) in the image display area 10a does not remain. Therefore, when the large substrate 10 ′ is cut, the stress applied to the scribe region 110 and the cutting margin 120 is applied to the unevenness forming layer 13 a in the image display region 10 a via the organic insulating film such as the photosensitive resins 7 and 13. And upper layer film 7
Since it is not transmitted to a, cracks do not occur in the unevenness forming layer 13a and the upper layer film 7a formed in the image display area 10a. Here, the first photosensitive resin 13 and the second photosensitive resin 7 forming the unevenness forming layer 13a and the upper layer film 7a are TF.
Although it is also used as an interlayer insulating film in T30,
Since the interlayer insulating film made of such an organic insulating film is not likely to be cracked, the reliability of the liquid crystal device 100 can be improved.

In addition, the scribe area 110 and the cutting allowance 12
Since the organic insulating film such as the first photosensitive resin 13 and the second photosensitive resin 7 is not formed in No. 0, the problem that the organic insulating film scatters during cutting and scum can be solved.

[Other Embodiments] In the above embodiment, an example in which no organic insulating film such as the first photosensitive resin 13 or the second photosensitive resin 7 is formed in the scribe region 110 or the cutting margin 120 However, the image display area 1 is formed in the outer peripheral area (cutting margin 120) of the TFT array substrate 10.
0a within the photosensitive resin layer (upper layer film 7a, unevenness forming layer 13
As long as the photosensitive resin connected to a) does not remain, the structure shown in FIG. 13 may be used, for example.

In the example shown in FIG. 13, the image display area 10a
The upper layer film 7a and the concavo-convex forming layer 13a are formed in the inner region of the, and the photosensitive resin 7 is also formed in the region where the sealing material 52 is formed.
13 are left. In the example shown here, the photosensitive resins 7 and 13 remain as alignment marks even in the cutting margin 120.

Even with such a configuration, the cutting allowance 120
The photosensitive resins 7 and 13 formed on the photosensitive resin layer 13 are formed on the photosensitive resin layer (the upper layer film 7a and the unevenness forming layer 13 in the image display area 10a).
Since it is not connected to a), the stress applied to the scribe area 110 and the cutting margin 120 when the large-sized substrate 10 'is cut is the unevenness formed in the image display area 10a through the photosensitive resins 7 and 13. It does not reach the forming layer 13a and the upper layer film 7a. Therefore, the unevenness forming layer 13a and the upper layer film 7a formed in the image display area 10a are not cracked.

Further, in the cutting margin 120, the photosensitive resins 7, 1
3 is formed as an alignment mark in a very small area. Therefore, the large-sized panel structure 10
Is convenient for aligning with the predetermined position, and there is no problem that the photosensitive resins 7 and 13 scatter during cutting and scum occurs.

In the above embodiment, the photosensitive resin layer is 2
Although a layer is formed, when the upper layer film 7a is not formed, for example, in a configuration in which only one layer of photosensitive resin is formed, or in a configuration in which three or more layers of photosensitive resin are formed, By applying the present invention, cracking of the photosensitive resin layer in the image display area can be prevented, and scum caused by scattering of the photosensitive resin can be prevented.

In the above embodiment, the active matrix type liquid crystal device using the TFT as the pixel switching element has been described as an example.
The present invention may be applied to an active matrix liquid crystal device using an FD, a passive matrix liquid crystal device, and an electro-optical device using an electro-optical substance other than liquid crystal.

[Application of Electro-Optical Device to Electronic Equipment] The reflective or semi-transmissive / semi-reflective liquid crystal device 100 configured as described above can be used as a display portion of various electronic devices. An example will be described with reference to FIGS. 14, 15 and 16.

FIG. 14 is a block diagram showing a circuit configuration of an electronic apparatus using the electro-optical device according to the present invention as a display device.

In FIG. 14, the electronic equipment has a display information output source 70, a display information processing circuit 71, a power supply circuit 72, a timing generator 73, and a liquid crystal device 74. The liquid crystal device 74 also includes a liquid crystal display panel 75 and a drive circuit 76. As the liquid crystal device 74, the liquid crystal device 100 described above can be used.

The display information output source 70 is a ROM (Read
Only Memory), RAM (Random)
A memory such as an Access Memory), a storage unit such as various disks, a tuning circuit that tunes and outputs a digital image signal, and the like, and a display such as an image signal of a predetermined format based on various clock signals generated by the timing generator 73. Information is supplied to the display information processing circuit 71.

The display information processing circuit 71 is provided with various known circuits such as a serial-parallel conversion circuit, an amplification / inversion circuit, a rotation circuit, a gamma correction circuit, a clamp circuit, etc., and executes processing of input display information. , And supplies the image signal to the drive circuit 76 together with the clock signal CLK. The power supply circuit 72 supplies a predetermined voltage to each component.

FIG. 15 shows a mobile personal computer which is an embodiment of the electronic apparatus according to the present invention. The personal computer 80 shown here has a main body 82 having a keyboard 81, and a liquid crystal display unit 83. The liquid crystal display unit 83 is configured to include the liquid crystal device 100 described above.

FIG. 16 shows a mobile phone which is another embodiment of the electronic apparatus according to the present invention. The mobile phone 90 shown here has a plurality of operation buttons 91 and a display unit including the liquid crystal device 100 described above.

[0096]

As described above, according to the present invention, the cutting margin secured in the outer peripheral edge region of the region cut out as the substrate is the photosensitive resin connected to the photosensitive resin layer formed in the image display region. Since the resin does not remain, when the substrate is cut out, the stress applied to the cutting margin is not transmitted to the photosensitive resin in the image display area through the photosensitive resin. Therefore,
Since the photosensitive resin formed in the image display area is not cracked, the reliability of the electro-optical device can be improved. Further, since the photosensitive resin is not formed over a wide range in the cutting margin, it is possible to solve the problem that the organic insulating film scatters at the time of cutting and scum is generated.

[Brief description of drawings]

FIG. 1 is a plan view of a liquid crystal device when viewed from a counter substrate side.

FIG. 2 is a sectional view taken along the line HH ′ of FIG.

FIG. 3 is an equivalent circuit diagram of various elements, wirings, etc. formed in a plurality of pixels arranged in a matrix in the liquid crystal device shown in FIG.

4 is a plan view showing a configuration of each pixel formed on a TFT array substrate in the liquid crystal device shown in FIG.

5 is a cross-sectional view of the liquid crystal device shown in FIG. 1 taken along the line AA ′ in FIG.

6 is a cross-sectional view of the liquid crystal device shown in FIG. 1 from an image display area to an end portion.

FIG. 7 is an explanatory diagram showing a method of manufacturing a liquid crystal device by cutting out a large-sized panel structure to which large-sized substrates are bonded together into a single piece size.

8A to 8D are TFs of the liquid crystal device shown in FIG.
FIG. 6 is a process cross-sectional view showing the method of manufacturing the T array substrate.

9A to 9D are TFs of the liquid crystal device shown in FIG.
FIG. 9 is a process cross-sectional view of each process performed subsequent to the process shown in FIG. 8 in the method for manufacturing the T array substrate.

10A to 10C are T of the liquid crystal device shown in FIG.
FIG. 10 is a process cross-sectional view of each process performed subsequent to the process shown in FIG. 9 in the method of manufacturing the FT array substrate.

11A to 11D are T of the liquid crystal device shown in FIG.
FIG. 11 is a process cross-sectional view of each process performed subsequent to the process shown in FIG. 10 in the method of manufacturing the FT array substrate.

12A to 12D are T of the liquid crystal device shown in FIG.
FIG. 12 is a process cross-sectional view of each process performed subsequent to the process shown in FIG. 11 in the method of manufacturing the FT array substrate.

FIG. 13 is a cross-sectional view from an image display region to an end of another liquid crystal device to which the present invention is applied.

FIG. 14 is a block diagram showing a circuit configuration of an electronic device using the liquid crystal device according to the present invention as a display device.

FIG. 15 is an explanatory diagram showing a mobile personal computer as one embodiment of an electronic apparatus using the liquid crystal device according to the present invention.

FIG. 16 is an explanatory diagram of a mobile phone as an embodiment of an electronic apparatus using the liquid crystal device according to the invention.

FIG. 17 is a cross-sectional view from an image display region to an end of a conventional liquid crystal device.

18A to 18D are process cross-sectional views showing a process of forming a photosensitive resin layer in the manufacturing process of the liquid crystal device shown in FIG.

[Explanation of symbols]

1a Semiconductor film 1a 'channel forming region 1b Low concentration source region 1c Low concentration drain region 1d high concentration source region 1e high concentration drain region 2a Gate insulating film 3a scanning line 3b Capacitance line 4 First interlayer insulating film 5 Second interlayer insulating film 6a data line 6b drain electrode 7 Second photosensitive resin that constitutes the upper layer film 7a Upper layer film 8a Light reflection film 9a Pixel electrode 10 TFT array substrate Large substrate for manufacturing 10 'TFT array substrate 10a image display area 11 Base protection film 13 First photosensitive resin that constitutes the unevenness forming layer 13a Concavo-convex forming layer 20 Counter substrate 21 Counter electrode 30 pixel switching TFT 50 liquid crystal 53 Peripheral closure 100 Liquid crystal device (electro-optical device) 100a pixel 110 scribe area 120 cutting fee

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) G02F 1/1333 505 G02F 1/1333 505 1/1335 520 1/1335 520 F term (reference) 2H042 BA03 BA12 BA15 BA20 DA02 DA11 DA19 DA22 DC08 DD10 DE04 2H088 EA02 FA06 FA26 HA01 HA04 MA20 2H089 HA15 HA17 QA08 TA01 TA05 2H090 HD08 LA20 2H091 FA16Y FB02 FD02 GA01 GA07 LA07

Claims (20)

[Claims] 1. An electro-optical device in which a plurality of layers including a photosensitive resin layer are laminated in an inner region and an outer region of an image display area on a surface of a substrate holding an electro-optical material, Of the photosensitive resin layer formed in the outer area of the display area, the portion connected to the photosensitive resin layer formed in the image display area is formed avoiding the outer peripheral edge area of the substrate. An electro-optical device characterized in that 2. The electro-optical device according to claim 1, wherein all the photosensitive resin layers are formed so as to avoid the outer peripheral edge region. 3. The electro-optical device according to claim 2, wherein only the inorganic insulating film is formed in the outer peripheral edge region. 4. The photosensitive resin layer according to claim 1, wherein a photosensitive resin layer is also formed in the outer peripheral edge region, and the photosensitive resin layer is separated from the photosensitive resin layer formed in the image display region. An electro-optical device characterized by being formed. 5. The electro-optical device according to claim 4, wherein the photosensitive resin layer formed in the outer peripheral edge region is formed as an alignment mark when aligning the substrates. 6. The method according to any one of claims 1 to 5,
An electro-optical device, wherein a width dimension of the outer peripheral region is set to a cutting allowance when the substrate is cut out from a large substrate. 7. The method according to any one of claims 1 to 6,
In the image display area on the substrate, a light reflection film for reflecting light incident on the front surface side of the substrate is formed, and the photosensitive resin layer is formed on the lower layer side of the light reflection film. An electro-optical device, which is formed as a concavo-convex forming layer that imparts a concavo-convex pattern for light scattering on a surface of a light reflecting film. 8. The method according to any one of claims 1 to 6,
In the image display area on the substrate, a light reflection film that reflects light incident on the front surface side of the substrate is formed, and the photosensitive resin layer is formed on the lower layer side of the light reflection film. An electro-optical device characterized by being formed as a concavo-convex forming layer that imparts a concavo-convex pattern for light scattering to the surface of the film, and an upper layer film that covers the surface side of the concavo-convex forming layer. 9. The method according to claim 1, wherein
The substrate is a first substrate, and a second substrate is provided for the first substrate.
2. The electro-optical device, wherein the substrates are arranged to face each other and the electro-optical substance is held between the substrates. 10. The electro-optical device according to claim 9, wherein the electro-optical substance is liquid crystal. 11. An electronic apparatus comprising the electro-optical device defined in claim 1 as a display section. 12. An electro-optical device for obtaining a substrate by forming a plurality of layers including a photosensitive resin layer on a surface of a large substrate from which a single substrate holding an electro-optical material is cut out, and then cutting the large substrate. In the method of manufacturing a device, in the step of forming the photosensitive resin layer on the surface of the large-sized substrate, in the image display area of the photosensitive resin layer formed outside the area corresponding to the image display area of the single-piece substrate. The method for manufacturing an electro-optical device, characterized in that the portion connected to the photosensitive resin layer formed in step 1 is formed so as to avoid the outer peripheral region of the region cut out as the single-piece substrate. 13. The method of manufacturing an electro-optical device according to claim 12, wherein all the photosensitive resin layers are formed so as to avoid the outer peripheral edge region. 14. The method of manufacturing an electro-optical device according to claim 13, wherein only the inorganic insulating film is formed in the outer peripheral edge region. 15. The electro-optical device according to claim 12, wherein the photosensitive resin layer formed in the outer peripheral region is formed separately from the photosensitive resin layer formed in the image display region. Device manufacturing method. 16. The method of manufacturing an electro-optical device according to claim 15, wherein the photosensitive resin layer formed in the outer peripheral edge region is formed as an alignment mark when aligning the substrates. 17. The electro-optical device according to claim 12, wherein a width dimension of the outer peripheral region is set as a cutting allowance when the single substrate is cut out from the large substrate. Manufacturing method. 18. The light reflection film according to claim 12, which reflects the light incident on the front surface side of the single-piece substrate with respect to a region corresponding to the image display region on the large substrate. Before forming, the photosensitive resin layer is formed on the lower layer side of the light reflecting film, and is formed as a concavo-convex forming layer that imparts a concavo-convex pattern for light scattering to the surface of the light reflecting film. apparatus. 19. The light reflection film according to claim 12, which reflects the light incident on the front surface side of the single-piece substrate with respect to a region corresponding to the image display region on the large substrate. Before forming, the photosensitive resin layer on the lower layer side of the light reflection film, a concavo-convex formation layer for providing a concavo-convex pattern for light scattering on the surface of the light reflection film, and an upper layer film covering the concavo-convex formation layer A method of manufacturing an electro-optical device, characterized in that 20. The panel structure according to claim 12, wherein another substrate is attached to the large-sized substrate via a sealing material to form a panel structure, and the panel structure is formed from a region where the sealing material is formed. A method for manufacturing an electro-optical device, which comprises cutting outside.