JP2003006927A - Gold alloy for forming reflection film of optical recording disk - Google Patents
Gold alloy for forming reflection film of optical recording diskInfo
- Publication number
- JP2003006927A JP2003006927A JP2001189488A JP2001189488A JP2003006927A JP 2003006927 A JP2003006927 A JP 2003006927A JP 2001189488 A JP2001189488 A JP 2001189488A JP 2001189488 A JP2001189488 A JP 2001189488A JP 2003006927 A JP2003006927 A JP 2003006927A
- Authority
- JP
- Japan
- Prior art keywords
- gold alloy
- film
- optical recording
- recording disk
- reflection film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01038—Strontium [Sr]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01063—Europium [Eu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光記録ディスク反
射膜形成用金合金に関し、さらに詳しくは、高い反射率
と高い熱伝導率を有する均質な光記録ディスク反射膜を
与える金合金に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gold alloy for forming an optical recording disk reflective film, and more particularly to a gold alloy which provides a homogeneous optical recording disk reflective film having high reflectance and high thermal conductivity.
【０００２】[0002]
【従来の技術】コンピュータ情報や映像情報あるいは音
楽情報を記録する媒体として、ＣＤ、ＣＤ−Ｒ、ＣＤ−
ＲＷ、ＤＶＤ、ＤＶＤ−ＲＷ、ＤＶＤ−ＲＡＭ、ＭＯ
Ｄ、ＭＤ等の各種の光記録ディスク（以下、光ディス
ク）が用いられているが、これらの光ディスクは、その
記録・再生方式によりそれぞれ層構造が異なるものの、
いずれも透明なプラスチック製基板上に各種機能を有す
る薄膜、例えば記録膜、反射膜、保護膜等を層状に形成
することによって作製されている。2. Description of the Related Art As a medium for recording computer information, video information or music information, CD, CD-R, CD-
RW, DVD, DVD-RW, DVD-RAM, MO
Various optical recording discs (hereinafter, optical discs) such as D and MD are used. These optical discs have different layer structures depending on their recording / reproducing systems.
Each of them is manufactured by forming a thin film having various functions, such as a recording film, a reflective film, a protective film, etc., in layers on a transparent plastic substrate.
【０００３】前記反射膜（ＤＶＤ等の多層ディスクの半
透膜を含む）は、情報の読み書きに使用するレーザー光
を反射する機能、レーザー光に起因する熱を逃す機能等
を有しており、全ての記録・再生方式の光ディスクに用
いられている。また、反射膜としては、主として、Ａ
ｌ、Ａｕ、Ａｇ、又はそれらの合金からなる金属薄膜が
用いられており、特にＣＤやＤＶＤといった読み出し専
用の光ディスクにおいては耐食性が良好な純Ａｕの金属
薄膜が多く用いられている。The reflective film (including a semi-transparent film of a multilayer disc such as a DVD) has a function of reflecting a laser beam used for reading and writing information, a function of radiating heat caused by the laser beam, and the like. It is used for optical disks of all recording / playback systems. Further, as the reflection film, mainly A
A metal thin film made of 1, Au, Ag, or an alloy thereof is used, and particularly in read-only optical discs such as CD and DVD, a pure Au metal thin film having good corrosion resistance is often used.
【０００４】近年、コンピュータの普及に伴って情報量
が急激に増加しており、その記録媒体となる光ディスク
の高記録密度化も急速に進行している。この光ディスク
の高記録密度化に対応して、反射膜には高い反射率と高
い熱伝導性が要求されるようになってきている。In recent years, the amount of information has been rapidly increasing with the spread of computers, and the recording density of optical disks, which are the recording medium, is also rapidly increasing. In response to the increase in recording density of this optical disc, the reflective film is required to have high reflectance and high thermal conductivity.
【０００５】Ａｕ薄膜は、高い反射率と共に高い熱伝導
性を有しており、前記要求を満たせる材料であるが、加
熱により結晶組織が粗大化し、膜の表面粗さが増大して
反射率が局所的に低下するため、Ｃ／Ｎ比、ジッター、
変調度といったディスク特性が悪化しやすいという問題
点を有している。尚、多層ディスクの半透膜の場合に
は、反射率に加えて透過率が局所的に変動し、ディスク
特性が悪化する。The Au thin film has a high reflectance and a high thermal conductivity, and is a material that can meet the above-mentioned requirements. However, the crystal structure becomes coarse by heating, and the surface roughness of the film increases, so that the reflectance is high. C / N ratio, jitter,
There is a problem that the disk characteristics such as the degree of modulation easily deteriorate. In the case of a semi-permeable film of a multi-layer disc, the transmittance also locally changes in addition to the reflectance, and the disk characteristics deteriorate.
【０００６】[0006]
【発明が解決しようとする課題】本発明の課題は、上記
従来技術の問題点に鑑み、光ディスクの高記録密度化に
対応可能な、耐食性に優れ、高い反射率と高い熱伝導性
を有する均質な反射膜を与える金合金を提供することに
ある。SUMMARY OF THE INVENTION In view of the above-mentioned problems of the prior art, an object of the present invention is to provide a homogeneous optical disk having a high recording density, excellent corrosion resistance, high reflectance and high thermal conductivity. Another object of the present invention is to provide a gold alloy that provides a transparent reflective film.
【０００７】[0007]
【課題を解決するための手段】本発明者らは、上記課題
を解決すべく鋭意研究した結果、特定の元素を添加した
金合金により、上記課題が解決されることを見出し、斯
かる知見に基づいて本発明を完成するに至った。即ち、
本発明によれば、以下に示す光記録ディスク反射膜形成
用の金合金が提供される。
（１）光記録ディスク反射膜形成用の金合金であって、
Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｓｍ、Ｅｕ、Ｃａ、Ｓ
ｒ、及びＢａからなる群より選ばれる少なくとも１種の
元素を０．０００５〜０．０５重量％含有し、残部がＡ
ｕからなることを特徴とする光記録ディスク反射膜形成
用金合金。
（２）Ａｇを０．１〜２０重量％含有する前記（１）に
記載の光記録ディスク反射膜形成用金合金。Means for Solving the Problems As a result of intensive studies to solve the above problems, the present inventors have found that the above problems can be solved by a gold alloy containing a specific element. Based on this, the present invention has been completed. That is,
According to the present invention, the following gold alloy for forming a reflective film of an optical recording disk is provided. (1) A gold alloy for forming an optical recording disk reflection film,
Y, La, Ce, Pr, Nd, Sm, Eu, Ca, S
contains 0.0005 to 0.05% by weight of at least one element selected from the group consisting of r and Ba, the balance being A
A gold alloy for forming a reflective film of an optical recording disk, which is made of u. (2) The gold alloy for forming an optical recording disk reflective film according to (1), which contains 0.1 to 20% by weight of Ag.
【０００８】[0008]
【発明の実施の形態】本発明の光記録ディスク形成用金
合金は、Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｓｍ、Ｅｕ、Ｃ
ａ、Ｓｒ、及びＢａからなる群より選ばれる少なくとも
１種の元素を０．０００５〜０．０５重量％含有し、残
部がＡｕからなることを特徴とする。尚、該金合金中に
上記元素以外の微量成分（不可避不純物）が含まれる場
合も、本発明と同様の作用効果を有する限り、本発明の
金合金に包含される。BEST MODE FOR CARRYING OUT THE INVENTION The gold alloy for forming an optical recording disk of the present invention is Y, La, Ce, Pr, Nd, Sm, Eu, C.
It is characterized in that it contains 0.0005 to 0.05% by weight of at least one element selected from the group consisting of a, Sr, and Ba, with the balance being Au. Even if the gold alloy contains trace components (unavoidable impurities) other than the above elements, it is included in the gold alloy of the present invention as long as it has the same effects as the present invention.
【０００９】一般に、Ｃｕ、Ｎｉ等の合金元素を多量に
添加することによりＡｕ膜の結晶組織の粗大化を防止で
きることが知られているが、この場合には、Ａｕ膜の熱
伝導性や耐食性が低下するという問題が生じる。本発明
においては、Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｓｍ、Ｅ
ｕ、Ｃａ、Ｓｒ、及びＢａからなる群より選ばれる少な
くとも１種の元素をＡｕに添加する。It is generally known that coarsening of the crystal structure of the Au film can be prevented by adding a large amount of alloying elements such as Cu and Ni. In this case, however, the thermal conductivity and corrosion resistance of the Au film are high. Occurs. In the present invention, Y, La, Ce, Pr, Nd, Sm, E
At least one element selected from the group consisting of u, Ca, Sr, and Ba is added to Au.
【００１０】前記元素はＡｕ膜の結晶組織を微細化する
作用に極めて優れており、これら元素の少なくとも１種
をＡｕに少量添加することにより、スパッタ条件によら
ず微細な結晶組織を有する反射膜が得られると共に、そ
の後の製造工程や使用時における反射膜の結晶組織の粗
大化を防止することができる。また、前記元素の少なく
とも１種をＡｕに添加することにより、スパッタリング
用ターゲットの結晶組織が微細化されてスパッタリング
レートが均一化され、さらに、反射膜とプラスチック製
基板との間の密着性も向上する。即ち、本発明の金合金
によれば、耐食性に優れると共に膜中の結晶組織の粗大
化が防止されるため、高い反射率と高い熱伝導性を有
し、局所的な反射率の低下がない均質な反射膜を得るこ
とができる。The above elements are extremely excellent in the effect of refining the crystal structure of the Au film. By adding a small amount of at least one of these elements to Au, a reflective film having a fine crystal structure regardless of sputtering conditions. In addition to the above, it is possible to prevent the crystal structure of the reflective film from coarsening during the subsequent manufacturing process or use. Further, by adding at least one of the above-mentioned elements to Au, the crystal structure of the sputtering target is miniaturized and the sputtering rate is made uniform, and further the adhesion between the reflective film and the plastic substrate is improved. To do. That is, according to the gold alloy of the present invention, since it has excellent corrosion resistance and prevents coarsening of the crystal structure in the film, it has high reflectance and high thermal conductivity, and there is no local reduction in reflectance. A homogeneous reflective film can be obtained.
【００１１】本発明においては、前記元素の添加量を、
全合金重量に対し、０．０００５〜０．０５重量％、好
ましくは０．００１〜０．０１重量％とする。元素の添
加量が前記範囲より少なくなると、十分な添加効果が得
られないので好ましくなく、一方、前記範囲より多くな
ると、反射膜の耐食性が急激に低下するので好ましくな
い。反射膜の反射率は、高Ｃ／Ｎ比を得て記録速度を向
上させるために８０％以上とすることが好ましい。In the present invention, the addition amount of the above elements is
The amount is 0.0005 to 0.05% by weight, preferably 0.001 to 0.01% by weight, based on the total weight of the alloy. If the addition amount of the element is less than the above range, a sufficient addition effect cannot be obtained, which is not preferable, while if it is more than the above range, the corrosion resistance of the reflective film sharply decreases, which is not preferable. The reflectance of the reflective film is preferably 80% or more in order to obtain a high C / N ratio and improve the recording speed.
【００１２】また、本発明においては、金合金の製造コ
ストを低下させるために、前記金合金中のＡｕの一部を
Ａｇに置き換えることができる。この場合、Ａｇの添加
量は、全合金重量に対し、通常０．１〜２０重量％、好
ましくは０．１〜１０重量％、より好ましくは０．１〜
５重量％とする。Ａｇの添加量が前記範囲より少なくな
ると、十分な添加効果が得られないので好ましくなく、
一方、前記範囲より多くなると、反射膜の熱伝導性や耐
食性が極端に低下するので好ましくない。反射膜の熱伝
導率は、通常６０Ｗ／ｍ・Ｋ以上、好ましくは１００Ｗ
／ｍ・Ｋ以上、より好ましくは１５０Ｗ／ｍ・Ｋ以上で
ある。熱伝導率が前記範囲より低くなると、放熱機能が
十分に発揮されないので好ましくない。Further, in the present invention, in order to reduce the production cost of the gold alloy, a part of Au in the gold alloy can be replaced with Ag. In this case, the amount of Ag added is usually 0.1 to 20% by weight, preferably 0.1 to 10% by weight, more preferably 0.1 to 10% by weight, based on the total weight of the alloy.
5% by weight. If the addition amount of Ag is less than the above range, it is not preferable because a sufficient addition effect cannot be obtained.
On the other hand, if the amount exceeds the above range, the thermal conductivity and corrosion resistance of the reflective film are extremely lowered, which is not preferable. The thermal conductivity of the reflective film is usually 60 W / m · K or more, preferably 100 W
/ M · K or more, more preferably 150 W / m · K or more. When the thermal conductivity is lower than the above range, the heat dissipation function is not sufficiently exhibited, which is not preferable.
【００１３】本発明の金合金を製造する方法としては、
従来公知の方法が使用でき、例えば、純度９９．９９％
以上のＡｕと前記元素とを特定の割合で配合した後、ア
ルミナルツボ、黒鉛ルツボ等に充填し、高真空又は不活
性ガス雰囲気中で約１２００℃で溶解し、さらに真空又
は不活性ガス雰囲気中で鋳造することによりＡｕ合金鋳
塊を製造することができる。The method for producing the gold alloy of the present invention includes:
A conventionally known method can be used, for example, a purity of 99.99%
After mixing the above Au and the above elements in a specific ratio, the mixture is filled in an alumina crucible, a graphite crucible, etc., melted at about 1200 ° C. in a high vacuum or an inert gas atmosphere, and further in a vacuum or an inert gas atmosphere. It is possible to manufacture an Au alloy ingot by casting with.
【００１４】本発明の金合金を加工してスパッタリング
用ターゲットを作製する方法としては、従来公知の方法
が使用でき、例えば、前記合金鋳塊を熱間加工（鍛造・
圧延）した後、機械加工することによりスパッタリング
用ターゲットを作製することができる。As a method of processing the gold alloy of the present invention to prepare a sputtering target, a conventionally known method can be used. For example, the alloy ingot is hot worked (forged
After the rolling, the target for sputtering can be manufactured by machining.
【００１５】また、前記ターゲットを用いて反射膜を作
製する方法としては、従来公知の方法が使用でき、例え
ば、ターゲットを冷却板にはんだ付けした後、直流マグ
ネトロンスパッタリング装置に取り付け、ガラス基板、
Ｓｉ基板、あるいはプラスチック製基板上に合金薄膜を
形成することにより反射膜を作製することができる。As a method for producing a reflective film using the target, a conventionally known method can be used. For example, after the target is soldered to a cooling plate, it is attached to a DC magnetron sputtering device, and a glass substrate,
The reflection film can be prepared by forming an alloy thin film on a Si substrate or a plastic substrate.
【００１６】[0016]
【実施例】以下に、実施例及び比較例を挙げて本発明を
さらに詳細に説明するが、本発明はこれらの実施例によ
り限定されるものではない。EXAMPLES The present invention will be described in more detail below with reference to Examples and Comparative Examples, but the present invention is not limited to these Examples.
【００１７】（膜特性の試験・評価方法）
（１）反射率反射率は、分光光度計（波長６５０ｎｍ）
を用い、１つの試料中で場所を変えて３０点測定し、そ
の平均値と最小値で評価した。スパッタ後に５００℃で
１０秒間の熱処理を施した試料と、１０％硫酸水溶液に
１０秒間浸漬した試料についても、同様にして反射率を
測定し、膜の耐熱性と耐食性を評価した。
（２）熱伝導率
熱伝導率は、４点端子法で電気伝導度σを測定し、次の
関係式（Ｗｉｄｅｍａｎｎ−Ｆｒａｎｚの法則）から計
算した。
熱伝導率＝ＬσＴ（Ｌ：ローレンツ数、Ｔ：絶対温度）
（３）表面粗さ
表面粗さは、表面粗さが２０Å以下となるように加工さ
れたＳｉ基板上に膜を形成し、スパッタ後の膜と、さら
に５００℃で１０秒間熱処理した後の膜について、Ｔｏ
ｐｏ Ｍｅｔｒｉｘ社製のＡＦＭ（原子間力顕微鏡）を
用いて測定した。(Testing / Evaluation Method of Film Characteristics) (1) Reflectance The reflectance is measured by a spectrophotometer (wavelength 650 nm).
Was measured at 30 points in one sample at different locations, and the average value and the minimum value were evaluated. The reflectance of the sample which was heat-treated at 500 ° C. for 10 seconds after sputtering and the sample which was immersed in a 10% sulfuric acid aqueous solution for 10 seconds was measured in the same manner to evaluate the heat resistance and corrosion resistance of the film. (2) Thermal conductivity Thermal conductivity was calculated from the following relational expression (Widemann-Franz's law) by measuring the electrical conductivity σ by the 4-point terminal method. Thermal conductivity = LσT (L: Lorentz number, T: absolute temperature) (3) Surface roughness As for surface roughness, a film is formed on a Si substrate processed so that the surface roughness is 20 Å or less, and sputtering is performed. For the latter film and the film after heat treatment at 500 ° C. for 10 seconds, To
The measurement was performed using an AFM (atomic force microscope) manufactured by po Metrix.
【００１８】実施例１〜２２、比較例１〜３
９９．９〜９９．９９９重量％の純度を有するＡｕ、
Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｓｍ、Ｅｕ、Ｃａ、Ｓ
ｒ、Ｂａ、Ａｇを、表１に示す組成が得られるように配
合して黒鉛ルツボ中に装填し、アルゴンガス雰囲気中で
約１２００℃で溶解し、さらにアルゴンガス雰囲気中で
鋳造してＡｕ合金鋳塊を作製した。次に、この合金鋳塊
を鍛造・圧延した後、機械加工することによりスパッタ
リング用ターゲットを作製した。次に、このターゲット
を用い、日本真空技術社製のマグネトロンスパッタリン
グ装置により、スパッタガス：５ｍｍＴｏｒｒのＡｒガ
ス、直流電力：１ｋｗなる条件で、ガラス基板上あるい
はＳｉ基板上に３０００Åの厚さの合金薄膜を形成した
後、前記方法で膜の特性を評価した。尚、形成された薄
膜の組成は、スパッタリング用ターゲットの組成とほぼ
同等であった。表１にターゲットの組成、表２に反射率
と熱伝導率、表３に表面粗さを示す。Examples 1 to 22, Comparative Examples 1 to 9 Au having a purity of 99.9 to 99.999% by weight,
Y, La, Ce, Pr, Nd, Sm, Eu, Ca, S
r, Ba, and Ag were blended so that the composition shown in Table 1 was obtained, charged into a graphite crucible, melted at about 1200 ° C. in an argon gas atmosphere, and further cast in an argon gas atmosphere to form an Au alloy. An ingot was prepared. Next, this alloy ingot was forged and rolled, and then machined to prepare a sputtering target. Next, using this target, a magnetron sputtering device manufactured by Nippon Vacuum Technology Co., Ltd. is used to sputter gas: Ar gas of 5 mmTorr, DC power: 1 kw, and an alloy thin film with a thickness of 3000 Å on a glass substrate or a Si substrate. After forming the film, the characteristics of the film were evaluated by the above method. The composition of the formed thin film was almost the same as the composition of the sputtering target. Table 1 shows the composition of the target, Table 2 shows the reflectance and thermal conductivity, and Table 3 shows the surface roughness.
【００１９】[0019]
【表１】 [Table 1]
【００２０】[0020]
【表２】 [Table 2]
【００２１】[0021]
【表３】 [Table 3]
【００２２】表２、３の結果から明らかなように、本発
明の金合金によれば、耐食性に優れると共に膜中の結晶
組織の粗大化が防止されるため、高い反射率と高い熱伝
導性を有し、局所的な反射率の低下がない均質な反射膜
を得ることができる。As is clear from the results of Tables 2 and 3, the gold alloy of the present invention is excellent in corrosion resistance and prevents coarsening of the crystal structure in the film, so that high reflectance and high thermal conductivity are obtained. It is possible to obtain a homogeneous reflection film having the above-mentioned characteristics and having no local decrease in reflectance.
【００２３】[0023]
【発明の効果】以上説明した通り、本発明の金合金によ
れば、耐食性に優れると共に膜中の結晶組織の粗大化が
防止されるため、光ディスクの高記録密度化に対応可能
な、高い反射率と高い熱伝導性を有し、局所的な反射率
の低下がない均質な反射膜を得ることができる。As described above, according to the gold alloy of the present invention, the corrosion resistance is excellent and the crystal structure in the film is prevented from being coarsened. It is possible to obtain a uniform reflective film having high efficiency and high thermal conductivity, and having no local decrease in reflectance.
Claims (2)
あって、Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｓｍ、Ｅｕ、Ｃ
ａ、Ｓｒ、及びＢａからなる群より選ばれる少なくとも
１種の元素を０．０００５〜０．０５重量％含有し、残
部がＡｕからなることを特徴とする光記録ディスク反射
膜形成用金合金。1. A gold alloy for forming a reflective film of an optical recording disk, comprising Y, La, Ce, Pr, Nd, Sm, Eu and C.
A gold alloy for forming a reflective film on an optical recording disk, comprising 0.0005 to 0.05% by weight of at least one element selected from the group consisting of a, Sr, and Ba, and the balance being Au.
項１に記載の光記録ディスク反射膜形成用金合金。2. The gold alloy for forming a reflective film of an optical recording disk according to claim 1, which contains 0.1 to 20% by weight of Ag.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001189488A JP2003006927A (en) | 2001-06-22 | 2001-06-22 | Gold alloy for forming reflection film of optical recording disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001189488A JP2003006927A (en) | 2001-06-22 | 2001-06-22 | Gold alloy for forming reflection film of optical recording disk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003006927A true JP2003006927A (en) | 2003-01-10 |
Family
ID=19028396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001189488A Pending JP2003006927A (en) | 2001-06-22 | 2001-06-22 | Gold alloy for forming reflection film of optical recording disk |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003006927A (en) |
-
2001
- 2001-06-22 JP JP2001189488A patent/JP2003006927A/en active Pending
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