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JP2002353267A - ワイヤボンディング方法 - Google Patents

ワイヤボンディング方法

Info

Publication number
JP2002353267A
JP2002353267A JP2001153526A JP2001153526A JP2002353267A JP 2002353267 A JP2002353267 A JP 2002353267A JP 2001153526 A JP2001153526 A JP 2001153526A JP 2001153526 A JP2001153526 A JP 2001153526A JP 2002353267 A JP2002353267 A JP 2002353267A
Authority
JP
Japan
Prior art keywords
light emitting
bonding
wedge
electrode pattern
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001153526A
Other languages
English (en)
Inventor
Shigehisa Oonakahara
繁壽 大中原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001153526A priority Critical patent/JP2002353267A/ja
Publication of JP2002353267A publication Critical patent/JP2002353267A/ja
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
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  • Led Device Packages (AREA)

Abstract

(57)【要約】 【課題】 電極パターン上にマウントする複数の発光ダ
イオード等の半導体発光素子間の接合を強化することで
組立信頼性を向上させた半導体発光装置を得ること。 【解決手段】 Ａｕワイヤ５は、まず始めに電極パター
ン１上の一方の共通端子１ａ上にボールボンディングに
よって接合し、そのまま隣の発光ダイオード３の上面電
極３ａにウェッジボンディングする。そして、パッケー
ジ２上にマウントした複数の発光ダイオード３上に順次
ウェッジボンディングおよびこのウェッジボンディング
部６ａの上から重ねてボールボンディングし、最後に電
極パターン１上のもう一方の共通端子１ｂ上にウェッジ
ボンディングし、さらにこの共通端子１ｂのウェッジボ
ンディング部６ｂの上から重ねてボールボンディングす
る。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、電極パターン上に
マウントする複数の半導体発光素子間をワイヤ接合する
際のワイヤボンディング方法に関する。
【０００２】
【従来の技術】例えば、図２に示す半導体発光装置は、
電極パターン１を形成したパッケージ２上に複数の発光
ダイオード３をＡｇペースト４によりマウントし、発光
ダイオード３の上面電極３ａおよび電極パターン１上の
共通端子１ａ，１ｂ間をＡｕワイヤ５によって接続した
ものである。ここで、Ａｕワイヤ５は、一方の共通端子
１ａから始めてもう一方の共通端子１ｂまで各発光ダイ
オード３の上面電極３ａに順次押し付けながら連続的に
圧着していくいわゆるステッチボンド法により接合する
のが一般的である。
【０００３】
【発明が解決しようとする課題】ところが、このような
ステッチボンド法によれば、図２（ｂ）の拡大図に示す
ようにステッチボンド部７のＡｕワイヤ５の肉厚が薄く
なる。したがって、後の工程である樹脂封止時の熱応力
やこれに基づく内部応力の変化等によってＡｕワイヤ５
に引張りが生じると、ステッチボンド部７でＡｕワイヤ
５が破断したり、剥離したりすることがある。
【０００４】そこで、本発明では、電極パターン上にマ
ウントする複数の発光ダイオード等の半導体発光素子間
の接合を強化することで組立信頼性を向上させた半導体
発光装置を得るためのワイヤボンディング方法を提供す
る。
【０００５】
【課題を解決するための手段】上記課題を解決するため
本発明のワイヤボンディング方法は、複数の半導体発光
素子間をワイヤ接合する際、半導体発光素子の上部電極
上および電極パターンの端子上にウェッジボンディング
したワイヤ上から重ねてボールボンディングを行うこと
を特徴とする。
【０００６】本発明によれば、半導体発光素子の上部電
極上および電極パターンの端子上にウェッジボンディン
グによって肉厚の薄くなったワイヤをボールボンディン
グによって接合強化することができ、組立信頼性を向上
させた半導体発光装置が得られる。
【０００７】
【発明の実施の形態】請求項１に記載の発明は、電極パ
ターン上に複数の半導体発光素子をマウントし前記電極
パターンおよび複数の半導体発光素子間をワイヤ接合す
るワイヤボンディング方法において、前記電極パターン
上の一方の端子から始めて半導体発光素子の上部電極上
にウェッジボンディングし、前記上部電極のウェッジボ
ンディング部の上から重ねてボールボンディングし、順
次半導体発光素子の上部電極上へのウェッジボンディン
グおよびこのウェッジボンディング部の上から重ねてボ
ールボンディングし、最後に前記電極パターン上のもう
一方の端子上にウェッジボンディングし、さらにこのウ
ェッジボンディング部の上から重ねてボールボンディン
グすることを特徴とするワイヤボンディング方法であ
り、半導体発光素子の上部電極上および電極パターンの
端子上にウェッジボンディングによって肉厚の薄くなっ
たワイヤをボールボンディングによって接合強化するこ
とができる。
【０００８】以下、本発明の実施の形態について図面を
参照して説明する。
【０００９】図１は本発明の実施の形態における半導体
発光装置を示し、（ａ）は平面図、（ｂ）は側面図であ
る。
【００１０】図１において、本実施の形態における半導
体発光装置は、電極パターン１を形成したパッケージ２
上には複数の半導体発光素子としての発光ダイオード３
がＡｇペースト４によりマウントしてある。そして、こ
れら複数の発光ダイオード３の上面電極３ａおよび電極
パターン１上の共通端子１ａ，１ｂ間をＡｕワイヤ５に
よって接合する。
【００１１】ここで、Ａｕワイヤ５は、まず始めに電極
パターン１上の一方の共通端子１ａ上にボールボンディ
ングによって接合し、そのまま隣の発光ダイオード３の
上面電極３ａにウェッジボンディングする。そして、こ
の上面電極３ａのウェッジボンディング部６ａの上から
重ねてボールボンディングし、さらに隣の発光ダイオー
ド３の上面電極３ａにウェッジボンディングする。
【００１２】このようにパッケージ２上にマウントした
複数の発光ダイオード３上に順次ウェッジボンディング
およびこのウェッジボンディング部６ａの上から重ねて
ボールボンディングし、最後に電極パターン１上のもう
一方の共通端子１ｂ上にウェッジボンディングし、さら
にこの共通端子１ｂのウェッジボンディング部６ｂの上
から重ねてボールボンディングする。
【００１３】このようなボンディング方法によってパッ
ケージ２上にマウントした複数の発光ダイオード３およ
び電極パターン１間をワイヤ接合すれば、発光ダイオー
ド３の上部電極３ａ上および電極パターン１の共通端子
１ａ，１ｂ上のウェッジボンディング部６ａ，６ｂを強
化することができ、組立信頼性を向上させた半導体発光
装置が得られる。
【００１４】
【発明の効果】本発明によれば、半導体発光素子の上部
電極上および電極パターンの端子上にウェッジボンディ
ングによって肉厚の薄くなったワイヤをボールボンディ
ングによって接合強化することができ、組立信頼性を向
上させた半導体発光装置が得られる。
【図面の簡単な説明】
【図１】本発明の実施の形態における半導体発光装置を
示し、 （ａ）は平面図 （ｂ）は側面図
【図２】従来の半導体発光装置を示し、 （ａ）は平面図 （ｂ）は側面図
【符号の説明】
１ 電極パターン １ａ，１ｂ 共通端子 ２ パッケージ ３ 発光ダイオード ３ａ 上面電極 ４ Ａｇペースト ５ Ａｕワイヤ ６ａ，６ｂ ウェッジボンディング部

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】 電極パターン上に複数の半導体発光素子
    をマウントし前記電極パターンおよび複数の半導体発光
    素子間をワイヤ接合するワイヤボンディング方法におい
    て、前記電極パターン上の一方の端子から始めて半導体
    発光素子の上部電極上にウェッジボンディングし、前記
    上部電極のウェッジボンディング部の上から重ねてボー
    ルボンディングし、順次半導体発光素子の上部電極上へ
    ウェッジボンディングおよびこのウェッジボンディング
    部の上から重ねてボールボンディングし、最後に前記電
    極パターン上のもう一方の端子上にウェッジボンディン
    グし、さらにこのウェッジボンディング部の上から重ね
    てボールボンディングすることを特徴とするワイヤボン
    ディング方法。
JP2001153526A 2001-05-23 2001-05-23 ワイヤボンディング方法 Pending JP2002353267A (ja)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008130863A (ja) * 2006-11-22 2008-06-05 Nichia Chem Ind Ltd 半導体装置及びその製造方法
US8476726B2 (en) 2009-04-30 2013-07-02 Nichia Corporation Semiconductor device and method of manufacturing the semiconductor device
FR2986372A1 (fr) * 2012-01-31 2013-08-02 Commissariat Energie Atomique Procede d'assemblage d'un element a puce micro-electronique sur un element filaire, installation permettant de realiser l'assemblage
WO2014049973A1 (ja) * 2012-09-26 2014-04-03 パナソニック株式会社 発光モジュール
US8759987B2 (en) 2009-10-09 2014-06-24 Nichia Corporation Semiconductor device and method of manufacturing the semiconductor device
CN108269792A (zh) * 2011-05-18 2018-07-10 晟碟半导体（上海）有限公司 瀑布引线键合

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JPS5626973U (ja) * 1979-08-03 1981-03-12
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JPS5944836A (ja) * 1982-09-07 1984-03-13 Sumitomo Metal Mining Co Ltd ワイヤ−ボンデイング方法
JPH01251627A (ja) * 1987-12-30 1989-10-06 Sanken Electric Co Ltd リード細線を有する電気装置の製造方法

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JPS5626973U (ja) * 1979-08-03 1981-03-12
JPS57168257U (ja) * 1981-04-17 1982-10-23
JPS5944836A (ja) * 1982-09-07 1984-03-13 Sumitomo Metal Mining Co Ltd ワイヤ−ボンデイング方法
JPH01251627A (ja) * 1987-12-30 1989-10-06 Sanken Electric Co Ltd リード細線を有する電気装置の製造方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8132709B2 (en) 2006-11-22 2012-03-13 Nichia Corporation Semiconductor device and method for manufacturing same
JP2008130863A (ja) * 2006-11-22 2008-06-05 Nichia Chem Ind Ltd 半導体装置及びその製造方法
US8476726B2 (en) 2009-04-30 2013-07-02 Nichia Corporation Semiconductor device and method of manufacturing the semiconductor device
US9281457B2 (en) 2009-04-30 2016-03-08 Nichia Corporation Semiconductor device and method of manufacturing the semiconductor device
US8759987B2 (en) 2009-10-09 2014-06-24 Nichia Corporation Semiconductor device and method of manufacturing the semiconductor device
CN108269792A (zh) * 2011-05-18 2018-07-10 晟碟半导体（上海）有限公司 瀑布引线键合
FR2986372A1 (fr) * 2012-01-31 2013-08-02 Commissariat Energie Atomique Procede d'assemblage d'un element a puce micro-electronique sur un element filaire, installation permettant de realiser l'assemblage
CN104170071A (zh) * 2012-01-31 2014-11-26 原子能和代替能源委员会 在配线元件上组装微电子芯片元件的方法及使得组装能进行的安装设备
US9953953B2 (en) 2012-01-31 2018-04-24 Commissariat à l'Energie Atomique et aux Energies Alternatives Method for assembling a microelectronic chip element on a wire element, and installation enabling assembly to be performed
WO2013114009A1 (fr) * 2012-01-31 2013-08-08 Commissariat à l'Energie Atomique et aux Energies Alternatives Procédé d'assemblage d'un élément à puce micro-électronique sur un élément filaire, installation permettant de réaliser l'assemblage
WO2014049973A1 (ja) * 2012-09-26 2014-04-03 パナソニック株式会社 発光モジュール
JPWO2014049973A1 (ja) * 2012-09-26 2016-08-22 パナソニックＩｐマネジメント株式会社 発光モジュール
US9634211B2 (en) 2012-09-26 2017-04-25 Panasonic Intellectual Property Management Co., Ltd. Light-emitting module

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