JP2002314050A - Semiconductor thin-film manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor thin-film manufacturing device capable of simplifying a manufacturing process, so that a single-crystal thin film is formed on a substrate such as glass at a low cost and at a high throughput. SOLUTION: There are provided a laser radiation part 1 comprising a mechanism to project laser light to a prescribed region on the surface of a semiconductor crystal 6 into which a hydrogen ion is implanted, a substrate holding part 3 comprising a mechanism to align relative to the semiconductor crystal 6, a semiconductor crystal holding part 7 which comprises a mechanism to align relative to a substrate 5 forming a semiconductor thin film, and a pressure plate 4 for raising adhesion between the semiconductor crystal 6 and the substrate 5. Based on the semiconductor thin film formation principle, which is based on 'the method for forming semiconductor thin film' (patent application number 2000-398760), a laser light irradiation region 8 of the semiconductor single crystal 6 into which ions are implanted peels into a thin film, and a peeled semiconductor single crystal is bonded to the substrate 5 which is tightly contacted, and thus a semiconductor single crystal thin film is formed on the surface of the substrate 5.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor thin film for a thin film transistor used for a liquid crystal display device and an organic EL display device, and an SOI (silicon on insulator) for forming single crystal Si on an insulating film for high-speed operation. A) a semiconductor forming apparatus;

[0002]

2. Description of the Related Art A conventional semiconductor thin film for a thin film transistor is formed on a substrate such as glass by using a CVD method or a sputtering method.

[0003]

2. Description of the Related Art Conventional SOI semiconductors include a SIMOX method of forming a SiO2 layer by crystal growth on an insulating substrate such as sapphire, high-energy ion implantation of a large amount of oxygen inside the semiconductor, and then annealing the semiconductor wafer. It is formed by a wafer bonding method or the like in which a thin layer is formed by polishing or the like after being attached on a substrate.

[0004]

[Problem 1 to be Solved by the Invention] A semiconductor thin film formed by a conventional method such as a CVD method or a sputtering method is an amorphous film, and has a drawback that the operation speed is low even when a transistor is manufactured. To overcome this drawback, the amorphous semiconductor thin film formed by the conventional method has been improved by annealing and polycrystallizing it to increase the operation speed. However, compared to a transistor formed using a single crystal semiconductor, Then, performance such as operating speed and current driving capability is still inferior.

[0005]

The problem 2 to be solved by the present invention is that the SOI semiconductor according to the prior art 2 is manufactured by using a silicon thin film on a substrate holding a semiconductor thin film.
Expensive materials such as sapphire and quartz are used. Further, the manufacturing efficiency (throughput) of the process is low, and the cost is high.

[0006]

Means for Solving the Problems and Effects of the Invention In order to solve the above problems 1 and 2, a semiconductor thin film forming method based on Japanese Patent Application No. 2000-398760 "Method for Forming Semiconductor Thin Film" is used. The semiconductor thin film manufacturing apparatus according to the present invention is disclosed in Japanese Patent Application No. 2000-398.
It is an object of the present invention to provide means for forming a semiconductor thin film serving as a base material of an element in a region where a semiconductor element is required on a substrate by using a semiconductor thin film forming method based on No. 760 "Method of Forming Semiconductor Thin Film". By using the semiconductor thin film manufacturing apparatus according to the present invention, it is possible to form a semiconductor single crystal thin film in a required area on a substrate such as glass, metal, and ceramics in a simple, high-throughput, and low-cost process. Become.

[0007] Regarding the problem 1, by using a semiconductor thin film manufacturing apparatus according to the present invention to form a semiconductor thin film based on Japanese Patent Application No. 2000-398760 "Method of forming a semiconductor thin film",
A semiconductor single-crystal thin film can be formed in a necessary area on a low-cost, large-area substrate such as glass, and a transistor can be formed there. All the problems are solved and the cost is low.

[0008] Regarding the problem 2, by using a semiconductor thin film manufacturing apparatus according to the present invention to form a semiconductor thin film based on Japanese Patent Application No. 2000-398760 "Method of forming a semiconductor thin film",
A semiconductor single crystal thin film can be formed on a low-cost, large-area substrate such as glass by a simple, high-throughput, low-cost process.

The wavelength of the laser beam used in the semiconductor thin film manufacturing apparatus according to the present invention is transmitted through the substrate on which the semiconductor thin film is formed and adhered to the semiconductor crystal on which the semiconductor thin film is formed. In the case of a semiconductor thin film manufacturing apparatus, the surface is irradiated with a laser beam. In the case of a semiconductor thin film manufacturing apparatus, the wavelength is substantially equal to the band gap energy of the semiconductor crystal or the wavelength corresponding to the band gap energy of the semiconductor crystal. It is preferably shorter than the above.
On the other hand, through the semiconductor crystal described in claim 3,
In the case of a semiconductor thin-film manufacturing apparatus, a laser having a wavelength longer than the wavelength corresponding to the energy of the band gap of the semiconductor crystal is characterized by irradiating a laser beam to a substrate surface on which a semiconductor thin film in close contact with the semiconductor crystal is formed. Preferably, light is used.

[0010]

Next, an apparatus for manufacturing a semiconductor thin film according to the present invention will be described with reference to the drawings.

FIG. 1 is a schematic diagram showing an example of a semiconductor thin film manufacturing apparatus according to the present invention.

The semiconductor thin-film manufacturing apparatus shown in FIG. 1 includes a laser irradiator 1 having a mechanism for irradiating a predetermined area of a semiconductor crystal surface with a laser beam, and a substrate having a relative positioning mechanism with respect to a semiconductor crystal 6. The holding unit 3 includes a semiconductor crystal holding unit 7 having a relative positioning mechanism with respect to a substrate 5 on which a semiconductor thin film is formed.
There is a case where a pressure plate 4 that transmits light is provided. The relative positioning mechanism between the semiconductor crystal and the substrate is controlled by the substrate holding unit 3.
Alternatively, at least one of the semiconductor crystal holding units 7 may be provided. Further, the substrate holder 3 and the semiconductor crystal holder 7
If both have a positioning mechanism, the laser irradiation unit 1
It is not necessary to provide a mechanism for irradiating a predetermined area with laser light.

In this case, according to the semiconductor thin film forming principle based on Japanese Patent Application No. 2000-398760, “Method of Forming Semiconductor Thin Film”, laser light irradiation region 8 of semiconductor single crystal 6 into which ions have been implanted is formed.
Is peeled into a thin film, and the peeled semiconductor single crystal is bonded to the substrate 5 to which the semiconductor single crystal adheres, and a semiconductor single crystal thin film is formed on the surface of the substrate 5.

FIG. 2 is a schematic diagram showing another example of the semiconductor thin film manufacturing apparatus according to the present invention.

The semiconductor thin film manufacturing apparatus shown in FIG. 2 has at least a laser irradiation unit 11 having a mechanism for irradiating a predetermined region of a semiconductor crystal surface with laser light, and a relative positioning with respect to a substrate 14 on which a semiconductor thin film is formed. A semiconductor crystal holding unit 16 having a mechanism, a substrate holding unit 13 having a relative positioning mechanism with respect to the semiconductor crystal, and a laser beam 12 for improving the adhesion between the semiconductor crystal 15 and the substrate 14 forming the semiconductor thin film. In some cases, a transmitting pressure plate 17 is provided. Also,
The relative positioning mechanism between the semiconductor crystal and the substrate may be provided in at least one of the substrate holding unit 13 and the semiconductor crystal holding unit 16. Further, when both the substrate holding unit 13 and the semiconductor crystal holding unit 16 have a positioning mechanism, it is not necessary to provide the laser irradiation unit 11 with a mechanism for irradiating a predetermined area with laser light.

In this case, according to the semiconductor thin film forming principle based on Japanese Patent Application No. 2000-398760, “Method for Forming Semiconductor Thin Film”, the heat of the laser irradiation area of substrate 14 heated by laser light irradiation is subjected to ion implantation. Conducted to semiconductor single crystal 16,
The laser beam irradiating section 18 of the semiconductor single crystal 16 peels off in a thin film shape, and the substrate 14 on which the peeled semiconductor single crystal adheres.
Then, a semiconductor single crystal thin film is formed on the surface of the substrate 14.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing a first example of a semiconductor thin film manufacturing apparatus according to the present invention.

FIG. 2 is a schematic view showing a second example of the semiconductor thin film manufacturing apparatus according to the present invention.

[Explanation of symbols]

1 A laser irradiation unit having a mechanism for irradiating a predetermined area on the semiconductor crystal surface with laser light 2 A laser beam 3 A substrate holding unit having a relative positioning mechanism with respect to the semiconductor crystal 4 For improving the adhesion between the semiconductor crystal and the substrate A pressure plate that transmits laser light 5 A substrate on which a semiconductor thin film is formed 6 A semiconductor single crystal on which ion implantation has been performed 7 A semiconductor crystal holding part having a relative positioning mechanism with respect to a substrate 8 A laser light irradiation area 11 A predetermined surface of the semiconductor crystal A laser irradiation unit having a mechanism for irradiating a region with a laser beam 12 a laser beam 13 a substrate holding unit having a relative positioning mechanism with respect to a semiconductor crystal 14 a substrate on which a semiconductor thin film is formed 15 a semiconductor crystal on which ion implantation has been performed 16 17 A semiconductor crystal holding unit having a relative positioning mechanism of the laser 17 A pressure plate that transmits laser light for improving the adhesion between the semiconductor crystal and the substrate 18 A laser light irradiation area

Claims (3)

[Claims] A semiconductor device has a relative positioning mechanism for positioning a semiconductor crystal and a substrate on which a semiconductor thin film is formed, and a mechanism for bringing the semiconductor crystal and the substrate on which the semiconductor thin film is formed into close contact with each other. An apparatus for manufacturing a semiconductor thin film having a mechanism for irradiating a predetermined area with a laser beam. 2. The semiconductor thin film manufacturing apparatus according to claim 1, wherein a laser beam is applied to a semiconductor crystal surface which is transmitted through a substrate on which the semiconductor thin film is formed and is in close contact with the substrate on which the semiconductor thin film is formed. . 3. The semiconductor thin film manufacturing apparatus according to claim 1, wherein a laser beam is applied to a surface of the substrate which forms the semiconductor thin film that passes through the semiconductor crystal and is in close contact with the semiconductor crystal.