JP2002307007A - Rotating coating method - Google Patents
Rotating coating methodInfo
- Publication number
- JP2002307007A JP2002307007A JP2001117132A JP2001117132A JP2002307007A JP 2002307007 A JP2002307007 A JP 2002307007A JP 2001117132 A JP2001117132 A JP 2001117132A JP 2001117132 A JP2001117132 A JP 2001117132A JP 2002307007 A JP2002307007 A JP 2002307007A
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- coating liquid
- coating
- substrate
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 192
- 239000011248 coating agent Substances 0.000 claims abstract description 188
- 239000007788 liquid Substances 0.000 claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000004528 spin coating Methods 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 56
- 238000007599 discharging Methods 0.000 claims description 14
- 239000000725 suspension Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 238000009826 distribution Methods 0.000 description 10
- 230000002265 prevention Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000009471 action Effects 0.000 description 4
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000005484 gravity Effects 0.000 description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 102100028780 AP-1 complex subunit sigma-2 Human genes 0.000 description 1
- 101100055680 Homo sapiens AP1S2 gene Proteins 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体ウェハ、液
晶表示パネル用のガラス基板、半導体製造用のマスク基
板などの基板(以下、単に「基板」という)を水平に支
持しつつ回転させて、基板の表面にフォトレジスト液な
どの塗布液を塗布する回転塗布方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate, such as a semiconductor wafer, a glass substrate for a liquid crystal display panel, or a mask substrate for manufacturing a semiconductor (hereinafter simply referred to as a "substrate"), which is rotated while being horizontally supported. The present invention relates to a spin coating method for coating a coating liquid such as a photoresist liquid on a surface of a substrate.
【0002】[0002]
【従来の技術】従来の回転塗布方法は、回転チャック上
に基板を固定し、この基板表面にレジスト液などの塗布
液を供給した後、あるいは供給しながら、基板を載置し
た状態で回転チャックを回転し、塗布液を基板表面に広
げて塗布するものである。この従来の回転塗布方法を、
図を用いて説明する。2. Description of the Related Art In a conventional spin coating method, a substrate is fixed on a spin chuck, and after a coating solution such as a resist solution is supplied to the surface of the spin plate, or while the spin plate is mounted while the spin solution is being supplied, the spin chuck is rotated. Is rotated to spread the coating liquid on the substrate surface and apply the coating liquid. This conventional spin coating method,
This will be described with reference to the drawings.
【0003】図4は、従来の回転塗布方法による、塗布
液の基板への塗布を模式的に示す図である。図4におい
て、1は基板、2は塗布液、3はノズル、4は回転チャ
ック、5は吐出終了後の塗膜、6は高速回転塗布後の塗
膜である。FIG. 4 is a view schematically showing the application of a coating solution to a substrate by a conventional spin coating method. In FIG. 4, reference numeral 1 denotes a substrate, 2 denotes a coating liquid, 3 denotes a nozzle, 4 denotes a rotary chuck, 5 denotes a coating film after completion of discharge, and 6 denotes a coating film after high-speed rotation coating.
【0004】まず、回転チャック4上に固定され、停止
あるいは低速で回転している基板1の表面にノズル3か
ら塗布液2を吐出する(a)。吐出中は塗布液2に吐出
圧力が加わっており、吐出された塗布液2は基板1表面
を略円状に広がる(b)。吐出が終了すると塗布液2の
供給がなくなるので、塗布液2の粘性とつりあったとこ
ろで、塗布液2の広がりが停止し、塗膜5を形成する
(c)。次に、回転チャック4を高速で回転し、余分な
塗布液2を離散させ所定の膜厚の塗膜6を形成する
(d)。First, a coating liquid 2 is discharged from a nozzle 3 onto the surface of a substrate 1 fixed on a rotary chuck 4 and stopped or rotating at a low speed (a). During the discharge, a discharge pressure is applied to the coating liquid 2, and the discharged coating liquid 2 spreads in a substantially circular shape on the surface of the substrate 1 (b). When the ejection is completed, the supply of the coating liquid 2 is stopped, so that when the viscosity of the coating liquid 2 is balanced, the spreading of the coating liquid 2 is stopped and the coating film 5 is formed (c). Next, the rotating chuck 4 is rotated at a high speed, and the excess coating liquid 2 is dispersed to form a coating film 6 having a predetermined thickness (d).
【0005】[0005]
【発明が解決しようとする課題】しかし、従来の回転塗
布方法では、吐出終了とともに、塗布液2に加わる吐出
圧力がなくなるので、吐出最終に供給された塗布液2が
基板1の中央部に滞留し、吐出終了後の塗膜5は中央部
が厚くなる。そして、回転チャック4の高速回転による
基板1表面の余分な塗布液2の離散においても、基板1
の周辺部は、周速が速いので、大きな遠心力の作用によ
り塗布液2は十分に離散し、塗膜が薄くなる。しかし、
基板1の中央部は周速が遅く、遠心力が小さいので塗布
液2の離散が少なく、高速回転塗布後も塗膜は厚いまま
である。すなわち、従来の回転塗布方法では、塗膜は基
板中央部が厚く基板周辺部が薄くなり、基板表面全体に
わたって均一な膜厚の塗膜を形成できないとの問題があ
った。However, in the conventional spin coating method, the discharge pressure applied to the coating liquid 2 disappears at the end of the discharge, so that the coating liquid 2 supplied at the end of the discharge stays in the center of the substrate 1. However, the coating film 5 after the end of the discharge becomes thick at the center. Even when the excess coating liquid 2 on the surface of the substrate 1 is separated by the high-speed rotation of the rotary chuck 4,
Since the peripheral speed is high, the coating liquid 2 is sufficiently dispersed by the action of a large centrifugal force, and the coating film becomes thin. But,
The central portion of the substrate 1 has a low peripheral speed and a small centrifugal force, so that the coating liquid 2 is less dispersed, and the coating film remains thick even after high-speed spin coating. In other words, the conventional spin coating method has a problem that the coating film is thick at the center of the substrate and thin at the periphery of the substrate, so that a coating film having a uniform thickness cannot be formed over the entire surface of the substrate.
【0006】本発明は、上記のような課題を解決するた
めになされたものであり、塗布液を効率的に基板の広い
面積に均一な厚さに塗布する回転塗布方法を提供するこ
とを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and has as its object to provide a spin coating method for efficiently applying a coating liquid to a large area of a substrate to a uniform thickness. And
【0007】[0007]
【課題を解決するための手段】本発明に係わる第1の回
転塗布方法は、基板の表面の略中心に向けて塗布液を加
圧して吐出し、上記基板を回転させて塗布液を塗布する
回転塗布方法において、第1の吐出圧力で上記塗布液を
吐出した後、上記第1の吐出圧力より高い第2の吐出圧
力で塗布液を1秒以内吐出し、第2の吐出圧力で吐出を
開始してから2秒以内に吐出を終了することである。According to a first spin coating method according to the present invention, a coating liquid is applied under pressure to a substantially center of the surface of a substrate and discharged, and the coating liquid is coated by rotating the substrate. In the spin coating method, after the coating liquid is discharged at a first discharge pressure, the coating liquid is discharged within one second at a second discharge pressure higher than the first discharge pressure, and the discharge is performed at a second discharge pressure. That is, the ejection is completed within 2 seconds after the start.
【0008】本発明に係わる第2の回転塗布方法は、本
発明の第1の回転塗布方法において、第2の吐出圧力を
第1の吐出圧力の1.3〜3倍にすることである。[0008] A second spin coating method according to the present invention is that in the first spin coating method of the present invention, the second discharge pressure is 1.3 to 3 times the first discharge pressure.
【0009】本発明に係わる第3の回転塗布方法は、基
板を回転させ、この基板の表面の略中心に向けて塗布液
を加圧して吐出し、塗布液を塗布する回転塗布方法にお
いて、上記塗布液の吐出を中断し、その後上記塗布液の
2秒以内の再吐出を行い、吐出を終了することである。A third spin coating method according to the present invention is the spin coating method of rotating a substrate, applying and discharging a coating liquid toward a substantially center of the surface of the substrate, and applying the coating liquid. Discharging of the coating liquid is interrupted, and then the coating liquid is re-discharged within 2 seconds, and the discharge is terminated.
【0010】本発明に係わる第4の回転塗布方法は、本
発明の第3の回転塗布方法において、塗布液の、吐出の
中断と再吐出とを複数回行うことである。In a fourth spin coating method according to the present invention, in the third spin coating method of the present invention, the application liquid is interrupted and re-ejected a plurality of times.
【0011】本発明に係わる第5の回転塗布方法は、本
発明の第3または4の回転塗布方法において塗布液の吐
出を中断する時間を2秒以内とすることである。[0011] A fifth spin coating method according to the present invention is that in the third or fourth spin coating method of the present invention, the time during which the discharge of the coating liquid is interrupted is set within 2 seconds.
【0012】[0012]
【発明の実施の形態】実施の形態1.図1は、実施の形
態1の回転塗布方法に用いる回転塗布装置の模式図であ
る。図1において、1は基板、3はノズル、4は回転チ
ャック、7は液ダレ防止弁、8はシリンジ、9はコネク
ターチューブ、10は吐出制御装置である。図1に示す
ように、ノズル3は液ダレ防止弁7を介して塗布液2を
充填したシリンジ8に接続されており、さらに、シリン
ジ8はコネクターチューブ9を介して吐出制御装置10
に接続されている。この吐出制御装置10はシリンジ8
内の塗布液2に加える圧力および塗布液2を吐出してい
る時間を制御でき、塗布液2の吐出量を制御できる。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a schematic diagram of a spin coating apparatus used in the spin coating method according to the first embodiment. In FIG. 1, 1 is a substrate, 3 is a nozzle, 4 is a rotary chuck, 7 is a liquid dripping prevention valve, 8 is a syringe, 9 is a connector tube, and 10 is a discharge control device. As shown in FIG. 1, the nozzle 3 is connected to a syringe 8 filled with the coating liquid 2 via a liquid dripping prevention valve 7, and the syringe 8 is connected to a discharge control device 10 via a connector tube 9.
It is connected to the. The discharge control device 10 includes a syringe 8
The pressure applied to the coating liquid 2 and the time during which the coating liquid 2 is discharged can be controlled, and the discharge amount of the coating liquid 2 can be controlled.
【0013】図2は、実施の形態1の回転塗布方法にお
ける、塗布液の基板への塗布を模式的に示す図である。
まず、吐出制御装置10によりシリンジ8内の塗布液2
に液ダレ防止弁7のバネ圧以上の第1の吐出圧力を加え
る。この時、シリンジ8は液ダレ防止弁7を介してノズ
ル3に接続されているので、塗布液2は基板1の略中心
の上方に配置したノズル3から、回転チャック4に載置
し固定した基板1表面上に、吐出される(a)。次に、
液ダレ防止弁7は圧力が加えられ一度弁が開くと、圧力
が加わっている間、弁は開いたままになるので、吐出制
御装置10により、第1の吐出圧力をシリンジ8内の塗
布液2に継続して加えると、ノズル3から基板1表面に
塗布液2が一定速度で吐出されるようになる。吐出した
塗布液2は自重及び吐出圧力の作用により、基板1上を
略円状に広がっていく。この時、回転チャック4は停止
していても、あるいは、例えば100〜300rpmの低
速で回転していても良い(b)。FIG. 2 is a diagram schematically showing the application of the coating liquid to the substrate in the spin coating method according to the first embodiment.
First, the ejection control device 10 controls the application liquid 2 in the syringe 8.
, A first discharge pressure equal to or higher than the spring pressure of the liquid dripping prevention valve 7 is applied. At this time, since the syringe 8 is connected to the nozzle 3 via the liquid dripping prevention valve 7, the coating liquid 2 is placed and fixed on the rotary chuck 4 from the nozzle 3 disposed substantially above the center of the substrate 1. It is discharged onto the surface of the substrate 1 (a). next,
When the pressure is applied to the liquid dripping prevention valve 7 and the valve is opened once, the valve remains open while the pressure is applied, so that the first discharge pressure is applied by the discharge control device 10 to the coating liquid in the syringe 8. 2 continuously, the coating liquid 2 is discharged from the nozzle 3 onto the surface of the substrate 1 at a constant speed. The discharged coating liquid 2 spreads substantially circularly on the substrate 1 by the action of its own weight and the discharge pressure. At this time, the rotary chuck 4 may be stopped or rotating at a low speed of, for example, 100 to 300 rpm (b).
【0014】次に、吐出圧力を上記第1の吐出圧力の
1.3〜3倍である第2の吐出圧力にして、1秒以内塗
布液2を吐出する(c)。予め設定した、第2の吐出圧
力での吐出開始後2秒以内に、シリンジ8内の塗布液2
への加圧を停止し、吐出を終了する(d)。すなわち、
第2の吐出圧力による1秒以内の吐出後は、直ちに吐出
を終了しても良いし、第1の吐出圧力に戻してもよい。
第1の吐出圧力で吐出する時間、第2の吐出圧力で吐出
する時間、第1の吐出圧力および第2の吐出圧力につい
ては、吐出制御装置10で予め設定する。次に、回転チ
ャック4を、例えば1500〜6000rpmの高速で回
転し、基板1表面の余分な塗布液2を離散させ所定の膜
厚の塗膜6を形成する(e)。Next, the coating liquid 2 is discharged within one second by setting the discharge pressure to a second discharge pressure 1.3 to 3 times the first discharge pressure (c). Within 2 seconds after the start of the discharge at the preset second discharge pressure, the coating liquid 2 in the syringe 8
Is stopped, and the ejection is terminated (d). That is,
After the ejection by the second ejection pressure for one second or less, the ejection may be terminated immediately or the pressure may be returned to the first ejection pressure.
The discharge time at the first discharge pressure, the discharge time at the second discharge pressure, the first discharge pressure, and the second discharge pressure are set in advance by the discharge control device 10. Next, the rotating chuck 4 is rotated at a high speed of, for example, 1500 to 6000 rpm, and the excess coating liquid 2 on the surface of the substrate 1 is dispersed to form a coating film 6 having a predetermined thickness (e).
【0015】次に、本実施の形態の回転塗布方法におい
て、基板1に均一な塗膜が形成される機構を説明する。
吐出が終了する前に吐出圧力を第2の吐出圧力に上げて
おり、大きな吐出圧力で塗布液2が基板1の中央部に吐
出されるので、図2のcに示すように、基板1の中央部
の塗布液2が一時的に周囲に押しやられ、中央部に塗布
液2が溜まるのが防止される。すなわち、塗膜5は、図
2のdに示すように、中央部が、周囲部分より薄くな
る。そして、第2の吐出圧力で吐出開始後2秒以内に吐
出を終了することにより、周囲に押しやられた塗布液が
重力の作用で基板中央部に戻る前に、基板1が回転チャ
ック4により高速回転される。従って、回転チャック4
を高速回転させ、基板1表面の余分な塗布液2を離散さ
せる時、高速回転時の周速が速い外周部の塗布液の離散
が中央部より多くても吐出終了後の基板1表面の塗膜の
中央部が、その外側より薄いので、図2のeに示すよう
に、高速回転塗布後の塗膜6の膜厚は均一となる。Next, a mechanism for forming a uniform coating film on the substrate 1 in the spin coating method of the present embodiment will be described.
Before the end of the discharge, the discharge pressure is raised to the second discharge pressure, and the coating liquid 2 is discharged to the central portion of the substrate 1 at a large discharge pressure. Therefore, as shown in FIG. The coating liquid 2 in the central part is temporarily pushed to the periphery, and the coating liquid 2 is prevented from accumulating in the central part. That is, as shown in FIG. 2D, the center of the coating film 5 is thinner than the peripheral portion. By stopping the discharge within 2 seconds after the start of the discharge at the second discharge pressure, the substrate 1 is rotated at a high speed by the rotary chuck 4 before the coating liquid pushed to the periphery returns to the center of the substrate by the action of gravity. Rotated. Therefore, the rotating chuck 4
Is rotated at a high speed, and the excess coating liquid 2 on the surface of the substrate 1 is dispersed. Since the central portion of the film is thinner than the outside, the film thickness of the coating film 6 after the high-speed spin coating becomes uniform as shown in FIG.
【0016】本実施の形態において、吐出時に、回転チ
ャック4を低速で回転(例えば100〜300rpm)す
ると、基板1表面での塗布液2の広がりが速くなり、塗
布プロセスを短くできるという効果がある。本実施の形
態の回転塗布方法は、従来の回転塗布方法では、基板中
央に塗布液2が溜まり易い粘度が500mPa・s以上の高
粘度の塗布液2を均一に塗布するのに、より効果的であ
る。In the present embodiment, when the rotating chuck 4 is rotated at a low speed (for example, 100 to 300 rpm) at the time of discharge, the spread of the coating liquid 2 on the surface of the substrate 1 is increased, and the coating process can be shortened. . The spin coating method of the present embodiment is more effective than the conventional spin coating method in that the coating liquid 2 that easily accumulates at the center of the substrate uniformly applies the high-viscosity coating liquid 2 having a viscosity of 500 mPa · s or more. It is.
【0017】本実施の形態の回転塗布方法においては、
第2の吐出圧力で吐出する時間が1秒以内なので、塗布
液2の吐出量の多い時間が短く、必要以上の塗布液2が
吐出されず、多量の塗布液が使用されることによる塗膜
形成コストの増大が防止できる。In the spin coating method of the present embodiment,
Since the discharge time at the second discharge pressure is within 1 second, the time when the discharge amount of the coating liquid 2 is large is short, the coating liquid 2 is not discharged more than necessary, and the coating film is used because a large amount of the coating liquid is used. An increase in formation cost can be prevented.
【0018】本実施の形態の回転塗布方法において、第
2の吐出圧力を第1の吐出圧力の1.3〜3倍とした。
第2の吐出圧力が第1の吐出圧力の1.3倍未満である
と、塗布液2の粘度が高い場合、塗布液2の吐出により
基板1中央部の塗布液2を周囲に押しやるのが少なく、
中央部に塗布液2が溜まるのが防止されないことがあ
る。第2の吐出圧力が第1の吐出圧力の3倍以上である
と、吐出時にノズル3の先端で、塗布液2が飛散し、塗
布液2を塗布ムラなく良好に吐出することができなくな
る。In the spin coating method of the present embodiment, the second discharge pressure is set to 1.3 to 3 times the first discharge pressure.
When the second discharge pressure is less than 1.3 times the first discharge pressure, when the viscosity of the coating liquid 2 is high, the discharge of the coating liquid 2 pushes the coating liquid 2 at the center of the substrate 1 to the periphery. Less,
In some cases, the accumulation of the coating liquid 2 at the center is not prevented. If the second discharge pressure is at least three times the first discharge pressure, the coating liquid 2 is scattered at the tip of the nozzle 3 during discharge, and the coating liquid 2 cannot be discharged properly without uneven coating.
【0019】本実施の形態の回転塗布方法では、特別な
機構や複数のノズルの設置が不要であり、従来の回転塗
布装置により、基板に塗布液を均一な膜厚で塗布でき、
装置コストを安価にできる。In the spin coating method of the present embodiment, no special mechanism or the installation of a plurality of nozzles is required, and the coating liquid can be applied to the substrate with a uniform thickness by a conventional spin coating apparatus.
Equipment cost can be reduced.
【0020】実施の形態2.本発明の実施の形態2にお
ける回転塗布方法は、図1に示す回転塗布装置を用い、
塗布液2に、液ダレ防止弁7のバネ圧以上の圧力を加
え、基板1の表面に塗布液2の吐出を開始する。予め設
定した所定の吐出時間後に、塗布液2に加える圧力をな
くして吐出を中断する。一定時間後に、吐出開始時と同
じ圧力を加え、吐出を再開し、吐出再開後2秒以内に塗
布液2の再吐出を終了する。塗布液2の再吐出が終了後
直ちに、回転チャック4を高速(例えば1500〜60
00rpm)で回転し、余分な塗布液2を離散させ所定の
膜厚の塗膜6を形成する。Embodiment 2 The spin coating method according to the second embodiment of the present invention uses the spin coating apparatus shown in FIG.
A pressure equal to or higher than the spring pressure of the liquid dripping prevention valve 7 is applied to the coating liquid 2 to start discharging the coating liquid 2 onto the surface of the substrate 1. After a predetermined discharge time set in advance, the pressure applied to the application liquid 2 is eliminated, and the discharge is interrupted. After a certain period of time, the same pressure as at the start of the discharge is applied to restart the discharge, and the re-discharge of the coating liquid 2 is completed within 2 seconds after the restart of the discharge. Immediately after the re-discharge of the coating liquid 2 is completed, the rotating chuck 4 is rotated at a high speed (for example, 1500 to 60).
(00 rpm), and the excess coating solution 2 is dispersed to form a coating film 6 having a predetermined thickness.
【0021】次に、本実施の形態の回転塗布方法におい
て、基板1に均一な塗膜が形成される機構を説明する。
図3は、実施の形態2の回転塗布方法における、塗布液
2の吐出速度の経時変化を示す図である。まず、吐出開
始時は、液ダレ防止弁7のバネ圧以上の圧力が塗布液2
に加えられる(イ)。この時、シリンジ8内に閉じ込め
られていた塗布液2が圧力開放されてノズル3より流出
するため、一時的に吐出速度が大きくなる。その後、吐
出圧力、塗布液2の粘度、およびノズル3の形状によっ
て決まる一定の吐出速度(ロ)で塗布液2の吐出が継続
される。所定時間後、塗布液2の吐出を中断(ハ)する
と、塗布液2の吐出速度は0となる。再吐出開始時は、
吐出開始時と同様に塗布液2の吐出速度が一時的に大き
くなるので(ニ)、吐出される塗布液2により、基板1
の中央部には一時的に大きい力が作用する。その後、吐
出中断前の一定の吐出速度(ホ)で塗布液2が吐出され、
最後は塗布液2に加える圧力が0となり吐出が終了する
(ヘ)。Next, a mechanism for forming a uniform coating film on the substrate 1 in the spin coating method of the present embodiment will be described.
FIG. 3 is a diagram illustrating a change over time of the discharge speed of the coating liquid 2 in the spin coating method according to the second embodiment. First, at the start of discharge, a pressure equal to or higher than the spring pressure of the liquid dripping prevention valve 7 is applied to the coating liquid 2.
(A). At this time, the coating liquid 2 trapped in the syringe 8 is released from the pressure and flows out of the nozzle 3, so that the discharge speed temporarily increases. Thereafter, the discharge of the coating liquid 2 is continued at a constant discharge speed (b) determined by the discharge pressure, the viscosity of the coating liquid 2, and the shape of the nozzle 3. When the discharge of the coating liquid 2 is interrupted (C) after a predetermined time, the discharge speed of the coating liquid 2 becomes zero. At the start of re-discharge,
Since the discharge speed of the coating liquid 2 is temporarily increased as in the start of the discharge (d), the discharged coating liquid 2
A large force temporarily acts on the center of the. Thereafter, the coating liquid 2 is discharged at a constant discharge speed (e) before the discharge is interrupted,
Finally, the pressure applied to the coating liquid 2 becomes 0, and the discharge ends (f).
【0022】すなわち、吐出を再開した直後には、大き
な吐出速度で吐出される塗布液2により一時的に大きい
力が基板1の中央部へ加わり、基板1の中央部に溜まっ
た塗布液2が周囲に押しやられ、基板1の中央部の塗膜
が、周囲部分の塗膜より薄くなる。そして、吐出再開後
2秒以内に吐出を終了するため、周囲に押しやられた塗
布液が重力の作用で基板中央部に戻る前に、基板1を回
転チャック4により高速(例えば1500〜6000rp
m)で回転させることができる。そのため、余分な塗布
液を離散させる際、周速の速い基板周辺部での塗布液の
離散が中央部より多くても、塗布後の塗膜の膜厚は均一
となる。That is, immediately after the discharge is resumed, a large force is temporarily applied to the central portion of the substrate 1 by the coating liquid 2 discharged at a high discharge speed, and the coating liquid 2 accumulated in the central portion of the substrate 1 is removed. As a result, the coating film in the center of the substrate 1 becomes thinner than the coating film in the peripheral portion. Then, in order to finish the discharge within 2 seconds after the discharge is resumed, the substrate 1 is rotated by the rotary chuck 4 at a high speed (for example, 1500 to 6000 rp) before the coating solution pushed to the periphery returns to the center of the substrate by the action of gravity.
m) can be rotated. Therefore, when the excess coating liquid is dispersed, the thickness of the applied coating film is uniform even if the dispersion of the coating liquid in the peripheral portion of the substrate having a high peripheral speed is larger than that in the central portion.
【0023】本実施の形態の回転塗布方法では、吐出を
中断する時間は2秒以内であるので、中断時間において
基板1に塗布された塗布液2に含まれる溶媒の揮発がほ
とんどなく、塗布液2の粘度上昇を抑制でき、高粘度の
塗布液を塗布する場合でも、高速回転時に塗布液の離散
がしにくくなり塗膜が不均一になるのを防止できる。In the spin coating method of the present embodiment, since the time for interrupting the ejection is within 2 seconds, the solvent contained in the coating liquid 2 applied to the substrate 1 during the interruption time hardly volatilizes, and 2 can be suppressed, and even when a high-viscosity coating liquid is applied, the coating liquid is less likely to be separated during high-speed rotation, and the coating film can be prevented from becoming uneven.
【0024】実施の形態3.塗布液2の吐出の中断と再
吐出とを複数回繰り返した以外、実施の形態2と同様に
して、基板の表面に塗布液を回転塗布し、所定の膜厚の
塗膜6を形成する。Embodiment 3 FIG. The coating liquid is spin-coated on the surface of the substrate to form a coating film 6 having a predetermined thickness in the same manner as in the second embodiment, except that the interruption and the re-discharge of the coating liquid 2 are repeated a plurality of times.
【0025】[0025]
【実施例】次に、本発明を実施例により、さらに詳細に
説明する。Next, the present invention will be described in more detail by way of examples.
【0026】実施例1.塗布液2としての粘度が190
0mPa・sのアニソールに溶解したシリコンラダーポリマ
を100ccのシリンジ8に充填する。シリンジ8に
は、バネ圧9.8kPaの液ダレ防止弁7を介して内径
1.99mmのノズル3が接続されている。吐出制御装置
10より、30kPaの第1の吐出圧力(P1)をシリン
ジ内の塗布液2に加え、ノズル3から塗布液2を、回転
チャック4に載置し固定され、200rpmで回転してい
る基板1である5インチのシリコンウェハの表面に吐出
を開始する。吐出開始から8秒後に、吐出圧力を39kP
aの第2の吐出圧力(P2)に切替えて塗布液2を1秒
間吐出した後、吐出を終了する。第1の吐出圧力(P
1)、第2の吐出圧力(P2)、第1の吐出圧力で吐出
する時間(T1)、第2の吐出圧力で吐出する時間(T
2)、第2の吐出圧力で吐出を開始してから吐出を終了
するまでの時間(T3)は、吐出制御装置で予め決め
る。Embodiment 1 FIG. The viscosity as the coating liquid 2 is 190
A 100 cc syringe 8 is filled with a silicone ladder polymer dissolved in 0 mPa · s anisole. The nozzle 3 having an inner diameter of 1.99 mm is connected to the syringe 8 via a liquid dripping prevention valve 7 having a spring pressure of 9.8 kPa. The discharge control device 10 applies a first discharge pressure (P1) of 30 kPa to the coating liquid 2 in the syringe, places the coating liquid 2 from the nozzle 3 on the rotary chuck 4, is fixed, and rotates at 200 rpm. Discharge is started on the surface of a 5-inch silicon wafer that is the substrate 1. Eight seconds after the start of discharge, the discharge pressure is 39 kP
After the application liquid 2 is discharged for 1 second while switching to the second discharge pressure (P2) in a, the discharge is terminated. The first discharge pressure (P
1), the second discharge pressure (P2), the discharge time at the first discharge pressure (T1), and the discharge time at the second discharge pressure (T
2) The time (T3) from the start of discharge at the second discharge pressure to the end of discharge is predetermined by the discharge control device.
【0027】吐出終了後、回転チャック4を高速の19
00rpmで回転し、余分な塗布液を離散させ、平均膜厚
が約6μmの塗膜を形成する。次の(1)式から、塗膜
の膜厚の面内分布(D)を求め表1に示した。 D=(最大膜厚−最小膜厚)/(最大膜厚+最小膜厚)×100(%) ・・(1)After the end of the discharge, the rotating chuck 4 is moved
Rotating at 00 rpm, the excess coating solution is dispersed to form a coating film having an average thickness of about 6 μm. From the following equation (1), the in-plane distribution (D) of the film thickness of the coating film was determined and is shown in Table 1. D = (maximum thickness−minimum thickness) / (maximum thickness + minimum thickness) × 100 (%) (1)
【0028】実施例2.〜4.第2の吐出圧力で吐出す
る時間(T2)、第2の吐出圧力で吐出を開始してから
吐出を終了するまでの時間(T3)、第2の吐出圧力
(P2)を表1に示す値を用いた以外、実施例1と同様
の回転塗布方法により基板であるシリコンウェハの表面
に塗膜を形成し、(1)式から形成された塗膜の面内分
布(D)を求め表1に示した。Embodiment 2 FIG. ~ 4. Table 1 shows the time (T2) of discharge at the second discharge pressure, the time (T3) from the start of discharge at the second discharge pressure to the end of discharge, and the second discharge pressure (P2) shown in Table 1. A coating film was formed on the surface of a silicon wafer as a substrate by the same spin coating method as in Example 1 except for using, and the in-plane distribution (D) of the coating film formed from the formula (1) was obtained. It was shown to.
【0029】比較例1.吐出圧力を第1の吐出圧力から
第2の吐出圧力に切替えず、30kPaの第1の吐出圧力
(P1)で塗布液2を吐出した以外、実施例1と同様に
して、塗布液をシリコンウェハ表面に塗布し、塗膜を形
成し、(1)式から形成された塗膜の面内分布(D)を
求め表1に示した。Comparative Example 1 A coating liquid was applied to a silicon wafer in the same manner as in Example 1 except that the coating liquid 2 was discharged at a first discharging pressure (P1) of 30 kPa without switching the discharging pressure from the first discharging pressure to the second discharging pressure. It was applied to the surface to form a coating film, and the in-plane distribution (D) of the coating film formed from the formula (1) was determined and is shown in Table 1.
【0030】比較例2.〜4.表1に示すように、第2
の吐出圧力で吐出を開始してから吐出を終了するまでの
時間(T3)を3秒、第2の吐出圧力(P2)を第1の
吐出圧力(P1)の1.2倍の36kPaまたは第2の吐
出圧力(P2)を第1の吐出圧力(P1)の3.2倍の
96kPaのいずれかにした以外実施例1と同様にして、
塗布液をシリコンウェハ表面に塗布し、塗膜を形成し、
(1)式から形成された塗膜の面内分布(D)を求め表
1に示した。Comparative Example 2 ~ 4. As shown in Table 1, the second
The time (T3) from the start of discharge at the discharge pressure to the end of discharge is 3 seconds, and the second discharge pressure (P2) is 36 kPa or 1.2 times the first discharge pressure (P1). In the same manner as in Example 1 except that the discharge pressure (P2) of No. 2 was set to 96 kPa, which was 3.2 times the first discharge pressure (P1),
Apply the coating liquid to the silicon wafer surface to form a coating film,
The in-plane distribution (D) of the coating film formed from equation (1) was determined and is shown in Table 1.
【0031】表1から明らかなように、塗布液の回転塗
布方法において、第1の吐出圧力の1.3〜3倍の第2
の吐出圧力で1秒以内塗布液を吐出し、第2の吐出圧力
で吐出を開始してから2秒以内に吐出を終了するするこ
とにより、シリコンウェハ上に均一な膜厚の塗膜を形成
できる。As is clear from Table 1, in the method of spin-coating the coating liquid, the second discharge pressure is 1.3 to 3 times the first discharge pressure.
A coating film with a uniform thickness is formed on a silicon wafer by discharging the coating liquid within 1 second at a discharge pressure of 1 second and ending the discharge within 2 seconds after starting discharge at a second discharge pressure. it can.
【0032】[0032]
【表1】 [Table 1]
【0033】実施例5.実施例1と同様にして、30k
Paの吐出圧力(P3)でシリコンウェハ表面に塗布液の
吐出を開始する。吐出開始後も30kPaの一定圧力(P
3)で吐出を継続し、吐出開始から8秒後に塗布液2に
加える圧力をなくし、吐出を中断する。1秒後に30k
Pa吐出圧力を加え、吐出を再開し、2秒間吐出する。こ
の後は、実施例1と同様な工程で、シリコンウェハ表面
に塗膜を形成し、(1)式から形成された塗膜の面内分
布(D)を求め表2に示した。Embodiment 5 FIG. 30 k in the same manner as in the first embodiment.
The discharge of the coating liquid onto the silicon wafer surface is started at a discharge pressure of Pa (P3). 30kPa constant pressure (P
In 3), the discharge is continued, and after 8 seconds from the start of the discharge, the pressure applied to the coating liquid 2 is eliminated, and the discharge is interrupted. 30k after one second
Pa discharge pressure is applied, discharge is restarted, and discharge is performed for 2 seconds. Thereafter, a coating film was formed on the surface of the silicon wafer by the same process as in Example 1, and the in-plane distribution (D) of the coating film formed from the formula (1) was determined and shown in Table 2.
【0034】実施例6.〜8.吐出を中断するまでの吐
出時間(T4)、吐出を中断している時間(Ts)、再
吐出している時間(T5)を表2に示す値を用いた以
外、実施例5と同様にして、シリコンウェハ表面に塗膜
を形成し、(1)式から形成された塗膜の面内分布
(D)を求め表2に示した。Embodiment 6 FIG. ~ 8. The discharge time (T4) until the discharge was interrupted, the time during which the discharge was interrupted (Ts), and the time during which the discharge was re-discharged (T5) were the same as in Example 5 except that the values shown in Table 2 were used. Then, a coating film was formed on the surface of the silicon wafer, and the in-plane distribution (D) of the coating film formed from the formula (1) was determined and is shown in Table 2.
【0035】実施例9.吐出を中断するまでの吐出時間
(T4)を7秒、1秒間の吐出の中断と1秒間の再吐出
とを3回繰り返した以外実施例7と同様にして、シリコ
ンウェハ表面に塗膜を形成し、(1)式から形成された
塗膜の面内分布(D)を求め表2に示した。Embodiment 9 FIG. Forming a coating film on the silicon wafer surface in the same manner as in Example 7 except that the discharge time (T4) until the discharge is interrupted is 7 seconds, the discharge of 1 second is interrupted and the re-discharge of 1 second is repeated three times. Then, the in-plane distribution (D) of the coating film formed from equation (1) was determined and is shown in Table 2.
【0036】比較例5.再吐出している時間(T5)を
3秒とした以外実施例7と同様にしてシリコンウェハ表
面に塗膜を形成し、(1)式から形成された塗膜の面内
分布(D)を求め表2に示した。Comparative Example 5 A coating film was formed on the silicon wafer surface in the same manner as in Example 7 except that the re-discharge time (T5) was set to 3 seconds, and the in-plane distribution (D) of the coating film formed from the formula (1) was determined. The results are shown in Table 2.
【0037】実施例10.塗布液2として、粘度が25
00mPa・sのアニソールに溶解したシリコンラダーポリ
マを用いた以外実施例5と同様にしてシリコンウェハ表
面に塗膜を形成し、(1)式から形成された塗膜の面内
分布を求め表3に示した。Embodiment 10 FIG. The viscosity of the coating liquid 2 is 25
A coating film was formed on the surface of a silicon wafer in the same manner as in Example 5 except that a silicon ladder polymer dissolved in anisole of 00 mPa · s was used, and the in-plane distribution of the coating film formed by equation (1) was obtained. It was shown to.
【0038】比較例6.吐出を中断している時間(T
s)を4秒とした以外、実施例10と同様にしてシリコ
ンウェハ表面に塗膜を形成し、(1)式から形成された
塗膜の面内分布(D)を求め表3に示した。Comparative Example 6 Discharge time (T
A film was formed on the surface of the silicon wafer in the same manner as in Example 10 except that s) was set to 4 seconds, and the in-plane distribution (D) of the formed film was determined from the formula (1) and shown in Table 3. .
【0039】表2から明らかなように、実施の形態2の
回転塗布方法において、塗布液2の再吐出している時間
(Ts)を2秒以内とすることにより、シリコンウェハ
上に均一な膜厚の塗膜を形成できる。また、表2から明
らかなように、塗布液の、吐出の中断と再吐出とを複数
回繰り返しても、シリコンウェハ上に、均一な膜厚の塗
膜を形成できる。また、表3から明らかなように、実施
の形態2の回転塗布方法において、塗布液2の粘度が高
い場合においても、吐出を中断している時間(Ts)が
2秒以内であると、シリコンウェハ上に均一な膜厚の塗
膜を形成できる。As is clear from Table 2, in the spin coating method according to the second embodiment, by setting the re-discharge time (Ts) of the coating liquid 2 within 2 seconds, a uniform film can be formed on the silicon wafer. A thick coating film can be formed. Further, as is apparent from Table 2, even when the interruption and re-ejection of the application liquid are repeated a plurality of times, a coating film having a uniform film thickness can be formed on the silicon wafer. Further, as is clear from Table 3, in the spin coating method of the second embodiment, even when the viscosity of the coating liquid 2 is high, if the time (Ts) during which the ejection is interrupted is within 2 seconds, the silicon A coating film having a uniform thickness can be formed on a wafer.
【0040】[0040]
【表2】 [Table 2]
【0041】[0041]
【表3】 [Table 3]
【0042】[0042]
【発明の効果】本発明に係わる第1の回転塗布方法は、
基板の表面の略中心に向けて塗布液を加圧して吐出し、
上記基板を回転させて塗布液を塗布する回転塗布方法に
おいて、第1の吐出圧力で上記塗布液を吐出した後、上
記第1の吐出圧力より高い第2の吐出圧力で塗布液を1
秒以内吐出し、第2の吐出圧力で吐出を開始してから2
秒以内に吐出を終了することであり、回転塗布装置に特
別な機構や余分なノズルの設置が不要であり、装置コス
トを上げることなく従来の回転塗布装置を用いて、基板
上に均一な膜厚の塗膜を形成できる。また、吐出圧力を
上げて吐出する時間が短いので、塗布液の吐出量の多い
時間が短く、必要以上の塗布液が吐出されず、多量の塗
布液の使用が防止でき、塗膜形成コストを増加させず
に、基板上に均一な膜厚の塗膜を形成できる。According to the first spin coating method according to the present invention,
Pressurizes and discharges the coating liquid toward the approximate center of the substrate surface,
In the spin coating method of coating the coating liquid by rotating the substrate, the coating liquid is discharged at a first discharge pressure, and then the coating liquid is discharged at a second discharge pressure higher than the first discharge pressure.
Discharge within 2 seconds and start discharging at the second discharge pressure.
Dispensing is completed within seconds, no special mechanism or extra nozzles are required in the spin coating device, and a uniform film can be formed on the substrate using the conventional spin coating device without increasing the cost of the device. A thick coating film can be formed. In addition, since the time for discharging by raising the discharge pressure is short, the time for the large amount of the coating liquid is short, the coating liquid is not discharged more than necessary, the use of a large amount of the coating liquid can be prevented, and the cost of forming the coating film can be reduced. A coating film having a uniform thickness can be formed on the substrate without increasing the thickness.
【0043】本発明に係わる第2の回転塗布方法は、本
発明の第1の回転塗布方法において、第2の吐出圧力を
第1の吐出圧力の1.3〜3倍にすることであり、安価
な従来の回転塗布装置により、塗膜形成コストの増加も
なく、基板上に均一な膜厚の塗膜を形成できる。According to a second spin coating method of the present invention, in the first spin coating method of the present invention, the second discharge pressure is set to 1.3 to 3 times the first discharge pressure. An inexpensive conventional spin coating apparatus can form a coating film having a uniform thickness on a substrate without increasing the cost of forming a coating film.
【0044】本発明に係わる第3の回転塗布方法は、基
板を回転させ、この基板の表面の略中心に向けて塗布液
を加圧して吐出し、塗布液を塗布する回転塗布方法にお
いて、上記塗布液の吐出を中断し、その後上記塗布液の
2秒以内の再吐出を行い、吐出を終了することであり、
安価な従来の回転塗布装置により、塗膜形成コストの増
加もなく、基板上に均一な膜厚の塗膜を形成できる。A third spin coating method according to the present invention is the spin coating method of rotating a substrate, applying and discharging a coating liquid toward substantially the center of the surface of the substrate, and applying the coating liquid. Discharging of the coating liquid is interrupted, and then re-discharging of the coating liquid within 2 seconds is performed, thereby terminating the discharge.
An inexpensive conventional spin coating apparatus can form a coating film having a uniform thickness on a substrate without increasing the cost of forming a coating film.
【0045】本発明に係わる第4の回転塗布方法は、本
発明の第3の回転塗布方法において、塗布液の吐出の中
断と再吐出とを複数回行うことであり、安価な従来の回
転塗布装置により、塗膜形成コストの増加もなく、基板
上に均一な膜厚の塗膜を形成できる。A fourth spin coating method according to the present invention is the same as the third spin coating method according to the present invention, in which the discharge of the coating liquid is interrupted and re-discharged a plurality of times. By using the apparatus, a coating film having a uniform thickness can be formed on the substrate without increasing the cost of forming the coating film.
【0046】本発明に係わる第5の回転塗布方法は、本
発明の第3または4の回転塗布方法において、塗布液の
吐出を中断する時間を2秒以内とすることであり、吐出
中断時の溶媒の揮発による塗布液の粘度変化が少なく、
粘度の高い塗布液を用いても、基板上に均一な膜厚の塗
膜を形成できる。In a fifth spin coating method according to the present invention, in the third or fourth spin coating method of the present invention, the time during which the discharge of the coating liquid is interrupted is set to within 2 seconds. Little change in viscosity of coating solution due to evaporation of solvent,
Even when a coating solution having a high viscosity is used, a coating film having a uniform thickness can be formed on the substrate.
【図1】 実施の形態1の回転塗布方法に用いる回転塗
布装置の模式図である。FIG. 1 is a schematic diagram of a spin coating apparatus used in a spin coating method according to a first embodiment.
【図2】 実施の形態1の回転塗布方法における、塗布
液の基板への塗布を模式的に示す図である。FIG. 2 is a diagram schematically showing application of a coating liquid to a substrate in a spin coating method according to the first embodiment.
【図3】 実施の形態2の回転塗布方法における、塗布
液の吐出速度の経時変化を示す図である。FIG. 3 is a diagram showing a change over time of a discharge speed of a coating liquid in a spin coating method according to a second embodiment.
【図4】 従来の回転塗布方法による、塗布液の基板へ
の塗布を模式的に示す図である。FIG. 4 is a diagram schematically showing application of a coating liquid to a substrate by a conventional spin coating method.
1 基板、2 塗布液、3 ノズル、4 回転チャッ
ク、5 吐出終了後の塗膜、6 高速回転塗布後の塗
膜、7 液ダレ防止弁、8 シリンジ、9 コネクター
チューブ、10 吐出制御装置。1 substrate, 2 coating liquids, 3 nozzles, 4 rotating chucks, 5 coating films after completion of discharge, 6 coating films after high-speed rotation coating, 7 liquid dripping prevention valves, 8 syringes, 9 connector tubes, 10 discharge control devices.
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2H025 AB16 AB20 EA05 4D075 AC06 AC64 AC79 AC91 AC95 CA48 DA06 DB13 DB14 DC22 DC24 EA07 EA45 EB43 5F045 AA00 BB02 EB02 EB20 5F046 JA01 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H025 AB16 AB20 EA05 4D075 AC06 AC64 AC79 AC91 AC95 CA48 DA06 DB13 DB14 DC22 DC24 EA07 EA45 EB43 5F045 AA00 BB02 EB02 EB20 5F046 JA01
Claims (5)
圧して吐出し、上記基板を回転させて塗布液を塗布する
回転塗布方法において、第1の吐出圧力で上記塗布液を
吐出した後、上記第1の吐出圧力より高い第2の吐出圧
力で塗布液を1秒以内吐出し、第2の吐出圧力で吐出を
開始してから2秒以内に吐出を終了することを特徴とす
る回転塗布方法。In a rotary coating method for applying a coating liquid by applying a pressure to a substantially center of the surface of a substrate and discharging the coating liquid by rotating the substrate, the coating liquid is discharged at a first discharge pressure. After that, the application liquid is discharged within one second at a second discharge pressure higher than the first discharge pressure, and the discharge is completed within two seconds after starting the discharge at the second discharge pressure. Spin coating method.
3〜3倍にすることを特徴とする請求項1記載の回転塗
布方法。2. The method according to claim 1, wherein the second discharge pressure is set to be equal to the first discharge pressure.
2. The spin coating method according to claim 1, wherein said method is 3 to 3 times.
心に向けて塗布液を加圧して吐出し、塗布液を塗布する
回転塗布方法において、上記塗布液の吐出を中断し、そ
の後上記塗布液の2秒以内の再吐出を行い、吐出を終了
することを特徴とする回転塗布方法。3. A method of rotating a substrate, wherein the substrate is rotated and the application liquid is pressed and discharged toward substantially the center of the surface of the substrate, and the discharge of the application liquid is interrupted. A spin coating method, wherein the coating liquid is re-discharged within 2 seconds and the discharge is terminated.
回行うことを特徴とする請求項3に記載の回転塗布方
法。4. The spin coating method according to claim 3, wherein the suspension and re-discharge of the coating liquid are performed a plurality of times.
とすることを特徴とする請求項3または4に記載の回転
塗布方法。5. The spin coating method according to claim 3, wherein the time during which the discharge of the coating liquid is interrupted is set within 2 seconds.
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JP2001117132A JP2002307007A (en) | 2001-04-16 | 2001-04-16 | Rotating coating method |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9278373B2 (en) | 2012-09-07 | 2016-03-08 | Kabushiki Kaisha Toshiba | Spin coating apparatus and method |
-
2001
- 2001-04-16 JP JP2001117132A patent/JP2002307007A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9278373B2 (en) | 2012-09-07 | 2016-03-08 | Kabushiki Kaisha Toshiba | Spin coating apparatus and method |
US10549312B2 (en) | 2012-09-07 | 2020-02-04 | Toshiba Memory Corporation | Spin coating apparatus and method |
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