JP2002302516A - New polymer and light-emitting element using the same - Google Patents
New polymer and light-emitting element using the sameInfo
- Publication number
- JP2002302516A JP2002302516A JP2001104580A JP2001104580A JP2002302516A JP 2002302516 A JP2002302516 A JP 2002302516A JP 2001104580 A JP2001104580 A JP 2001104580A JP 2001104580 A JP2001104580 A JP 2001104580A JP 2002302516 A JP2002302516 A JP 2002302516A
- Authority
- JP
- Japan
- Prior art keywords
- group
- polymer
- light emitting
- monomer unit
- derivatives
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 62
- 239000000178 monomer Substances 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims description 61
- 125000004432 carbon atom Chemical group C* 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 51
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 17
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 16
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 16
- 229930192474 thiophene Natural products 0.000 claims description 8
- 125000005842 heteroatom Chemical group 0.000 claims description 6
- 125000000623 heterocyclic group Chemical group 0.000 claims description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 6
- 229920002554 vinyl polymer Polymers 0.000 claims description 5
- 125000004122 cyclic group Chemical group 0.000 claims description 4
- -1 Hydrazone compounds Chemical class 0.000 description 51
- 239000010410 layer Substances 0.000 description 51
- 150000001875 compounds Chemical class 0.000 description 43
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 239000013078 crystal Substances 0.000 description 17
- 239000000203 mixture Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 11
- 235000019557 luminance Nutrition 0.000 description 11
- 238000006116 polymerization reaction Methods 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 125000003118 aryl group Chemical group 0.000 description 10
- 125000001072 heteroaryl group Chemical group 0.000 description 10
- 238000002347 injection Methods 0.000 description 10
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- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 150000004696 coordination complex Chemical class 0.000 description 8
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- 239000002861 polymer material Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
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- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 5
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- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 4
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical class C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- TXCDCPKCNAJMEE-UHFFFAOYSA-N dibenzofuran Chemical compound C1=CC=C2C3=CC=CC=C3OC2=C1 TXCDCPKCNAJMEE-UHFFFAOYSA-N 0.000 description 4
- IYYZUPMFVPLQIF-UHFFFAOYSA-N dibenzothiophene Chemical compound C1=CC=C2C3=CC=CC=C3SC2=C1 IYYZUPMFVPLQIF-UHFFFAOYSA-N 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
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- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 229920000620 organic polymer Polymers 0.000 description 4
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 4
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 3
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 3
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 3
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 3
- 238000003618 dip coating Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 3
- 150000004866 oxadiazoles Chemical class 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229920000123 polythiophene Polymers 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 125000001302 tertiary amino group Chemical group 0.000 description 3
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 3
- 150000003852 triazoles Chemical class 0.000 description 3
- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 125000004397 aminosulfonyl group Chemical group NS(=O)(=O)* 0.000 description 2
- 125000004104 aryloxy group Chemical group 0.000 description 2
- RFRXIWQYSOIBDI-UHFFFAOYSA-N benzarone Chemical compound CCC=1OC2=CC=CC=C2C=1C(=O)C1=CC=C(O)C=C1 RFRXIWQYSOIBDI-UHFFFAOYSA-N 0.000 description 2
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical class C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- QDGONURINHVBEW-UHFFFAOYSA-N dichlorodifluoroethylene Chemical group FC(F)=C(Cl)Cl QDGONURINHVBEW-UHFFFAOYSA-N 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 125000004185 ester group Chemical group 0.000 description 2
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- 150000002222 fluorine compounds Chemical class 0.000 description 2
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- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine hydrate Chemical compound O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
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- 238000007733 ion plating Methods 0.000 description 2
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- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
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- 239000003446 ligand Substances 0.000 description 2
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- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
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- 125000001624 naphthyl group Chemical group 0.000 description 2
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
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- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
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- 239000000047 product Substances 0.000 description 2
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- 238000006862 quantum yield reaction Methods 0.000 description 2
- JWVCLYRUEFBMGU-UHFFFAOYSA-N quinazoline Chemical compound N1=CN=CC2=CC=CC=C21 JWVCLYRUEFBMGU-UHFFFAOYSA-N 0.000 description 2
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical class C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 2
- 238000010526 radical polymerization reaction Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
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- 125000001424 substituent group Chemical group 0.000 description 2
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- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
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- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical class C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
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- VERMWGQSKPXSPZ-BUHFOSPRSA-N 1-[(e)-2-phenylethenyl]anthracene Chemical class C=1C=CC2=CC3=CC=CC=C3C=C2C=1\C=C\C1=CC=CC=C1 VERMWGQSKPXSPZ-BUHFOSPRSA-N 0.000 description 1
- 125000006017 1-propenyl group Chemical group 0.000 description 1
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- AAQTWLBJPNLKHT-UHFFFAOYSA-N 1H-perimidine Chemical compound N1C=NC2=CC=CC3=CC=CC1=C32 AAQTWLBJPNLKHT-UHFFFAOYSA-N 0.000 description 1
- SULWTXOWAFVWOY-PHEQNACWSA-N 2,3-bis[(E)-2-phenylethenyl]pyrazine Chemical class C=1C=CC=CC=1/C=C/C1=NC=CN=C1\C=C\C1=CC=CC=C1 SULWTXOWAFVWOY-PHEQNACWSA-N 0.000 description 1
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- YCMLQMDWSXFTIF-UHFFFAOYSA-N 2-methylbenzenesulfonimidic acid Chemical group CC1=CC=CC=C1S(N)(=O)=O YCMLQMDWSXFTIF-UHFFFAOYSA-N 0.000 description 1
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
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- LGLDSEPDYUTBNZ-UHFFFAOYSA-N 3-phenylbuta-1,3-dien-2-ylbenzene Chemical class C=1C=CC=CC=1C(=C)C(=C)C1=CC=CC=C1 LGLDSEPDYUTBNZ-UHFFFAOYSA-N 0.000 description 1
- CQQSQBRPAJSTFB-UHFFFAOYSA-N 4-(bromomethyl)benzoic acid Chemical compound OC(=O)C1=CC=C(CBr)C=C1 CQQSQBRPAJSTFB-UHFFFAOYSA-N 0.000 description 1
- DENKGPBHLYFNGK-UHFFFAOYSA-N 4-bromobenzoyl chloride Chemical compound ClC(=O)C1=CC=C(Br)C=C1 DENKGPBHLYFNGK-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- ZYASLTYCYTYKFC-UHFFFAOYSA-N 9-methylidenefluorene Chemical class C1=CC=C2C(=C)C3=CC=CC=C3C2=C1 ZYASLTYCYTYKFC-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910016569 AlF 3 Inorganic materials 0.000 description 1
- KXDAEFPNCMNJSK-UHFFFAOYSA-N Benzamide Chemical group NC(=O)C1=CC=CC=C1 KXDAEFPNCMNJSK-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
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- 229910000799 K alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- 125000000738 acetamido group Chemical group [H]C([H])([H])C(=O)N([H])[*] 0.000 description 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 1
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
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- 125000005129 aryl carbonyl group Chemical group 0.000 description 1
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- 125000005521 carbonamide group Chemical group 0.000 description 1
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- 239000011651 chromium Substances 0.000 description 1
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- 125000004093 cyano group Chemical group *C#N 0.000 description 1
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- 125000004705 ethylthio group Chemical group C(C)S* 0.000 description 1
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- 239000000706 filtrate Substances 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229940083761 high-ceiling diuretics pyrazolone derivative Drugs 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 229920006270 hydrocarbon resin Polymers 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 150000002443 hydroxylamines Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 125000001841 imino group Chemical group [H]N=* 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- HOBCFUWDNJPFHB-UHFFFAOYSA-N indolizine Chemical compound C1=CC=CN2C=CC=C21 HOBCFUWDNJPFHB-UHFFFAOYSA-N 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 1
- ZLTPDFXIESTBQG-UHFFFAOYSA-N isothiazole Chemical compound C=1C=NSC=1 ZLTPDFXIESTBQG-UHFFFAOYSA-N 0.000 description 1
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 125000000400 lauroyl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- HNQIVZYLYMDVSB-UHFFFAOYSA-N methanesulfonimidic acid Chemical group CS(N)(=O)=O HNQIVZYLYMDVSB-UHFFFAOYSA-N 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 1
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- 238000002156 mixing Methods 0.000 description 1
- NCCHARWOCKOHIH-UHFFFAOYSA-N n-methylbenzamide Chemical group CNC(=O)C1=CC=CC=C1 NCCHARWOCKOHIH-UHFFFAOYSA-N 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical class C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- AODWRBPUCXIRKB-UHFFFAOYSA-N naphthalene perylene Chemical group C1=CC=CC2=CC=CC=C21.C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 AODWRBPUCXIRKB-UHFFFAOYSA-N 0.000 description 1
- 125000001038 naphthoyl group Chemical group C1(=CC=CC2=CC=CC=C12)C(=O)* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000001715 oxadiazolyl group Chemical group 0.000 description 1
- 125000002971 oxazolyl group Chemical group 0.000 description 1
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- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical class C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 125000006678 phenoxycarbonyl group Chemical group 0.000 description 1
- 150000004986 phenylenediamines Chemical class 0.000 description 1
- 150000005359 phenylpyridines Chemical class 0.000 description 1
- 125000003356 phenylsulfanyl group Chemical group [*]SC1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 125000003170 phenylsulfonyl group Chemical group C1(=CC=CC=C1)S(=O)(=O)* 0.000 description 1
- LFSXCDWNBUNEEM-UHFFFAOYSA-N phthalazine Chemical compound C1=NN=CC2=CC=CC=C21 LFSXCDWNBUNEEM-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 125000005936 piperidyl group Chemical group 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001490 poly(butyl methacrylate) polymer Polymers 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Chemical class 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
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- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 125000001501 propionyl group Chemical group O=C([*])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002568 propynyl group Chemical group [*]C#CC([H])([H])[H] 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 150000005255 pyrrolopyridines Chemical class 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
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- 230000006798 recombination Effects 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 125000000565 sulfonamide group Chemical group 0.000 description 1
- 125000005420 sulfonamido group Chemical group S(=O)(=O)(N*)* 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 125000003718 tetrahydrofuranyl group Chemical group 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- QKTRRACPJVYJNU-UHFFFAOYSA-N thiadiazolo[5,4-b]pyridine Chemical class C1=CN=C2SN=NC2=C1 QKTRRACPJVYJNU-UHFFFAOYSA-N 0.000 description 1
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical compound S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 1
- NZFNXWQNBYZDAQ-UHFFFAOYSA-N thioridazine hydrochloride Chemical class Cl.C12=CC(SC)=CC=C2SC2=CC=CC=C2N1CCC1CCCCN1C NZFNXWQNBYZDAQ-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、新規ポリマー、及
び該ポリマーを含有した高輝度発光および高発光効率、
耐久性に優れる発光素子に関する。[0001] The present invention relates to a novel polymer, and high-luminance and high luminous efficiency containing the polymer.
The present invention relates to a light-emitting element having excellent durability.
【0002】[0002]
【従来の技術】今日、種々の表示素子に関する研究開発
が活発であり、中でも、有機エレクトロルミネッセンス
(EL)素子は、低電圧で高輝度の発光を得ることができ、
有望な表示素子として注目されている。例えば、有機化
合物の蒸着により有機薄膜を形成するEL素子が知られて
いる(Applied Physics Letters, 51,p.913〜,(1987))。
該文献記載の有機EL素子は電子輸送材料と正孔輸送材料
の積層構造を有し、従来の単層型素子に比べてその発光
特性が大幅に向上している。2. Description of the Related Art At present, research and development on various display elements are active.
(EL) element can obtain high-brightness light emission at low voltage,
It is attracting attention as a promising display element. For example, an EL element that forms an organic thin film by vapor deposition of an organic compound is known (Applied Physics Letters, 51, p. 913-, (1987)).
The organic EL device described in the document has a laminated structure of an electron transporting material and a hole transporting material, and its light emitting characteristics are greatly improved as compared with the conventional single-layer type device.
【0003】この積層型素子では、素子材料として低分
子有機材料を蒸着することにより素子を形成している。
有機EL素子に用いられているような薄膜を形成する技術
としては、上記の文献にあるような真空蒸着法、スパッ
タ法、CVD、PVD、溶剤を用いた塗布法等、種々の方法を
使用することができる。この詳細については、いくつか
の成書にもその内容が記述されている。その一例を挙げ
ると、ORGANIC ELECTROLUMINESCENT MATERIALS AND DEV
ICES (OPA,Amsterdam,1997)、有機EL素子とその工業化
最前線(エヌ・ティー・エス,1998)等がある。発明者
は薄膜形成技術として、有機化合物、特に有機高分子材
料を溶液塗布する方法について検討を行ってきた。有機
高分子材料の場合、素材単独で欠陥の少ない薄膜を形成
することが可能であり、形成された薄膜の物理的、化学
的堅牢性にも優れるという特徴を有する。[0003] In this laminated element, an element is formed by evaporating a low molecular organic material as an element material.
As a technique for forming a thin film as used in an organic EL element, various methods such as a vacuum deposition method, a sputtering method, a CVD method, a PVD method, and a coating method using a solvent as described in the above-mentioned documents are used. be able to. The details are described in several publications. One example is ORGANIC ELECTROLUMINESCENT MATERIALS AND DEV
ICES (OPA, Amsterdam, 1997), and organic EL devices and the forefront of industrialization (NTS, 1998). The inventor has studied a method of applying a solution of an organic compound, particularly an organic polymer material, as a thin film forming technique. In the case of an organic polymer material, it is possible to form a thin film with few defects by using the material alone, and the formed thin film has excellent physical and chemical robustness.
【0004】しかしながら、電子輸送性、電子注入性、
正孔輸送性、正孔注入性、発光性など種々の機能を有す
る材料を複数発光素子に使用する場合、有機高分子材料
では、混合時に相分離などが起きることが多く、性能に
問題のあることがわかった。また、低分子化合物をポリ
マー材料と混合して使用した場合でも、耐久性の面で問
題があることがわかってきた。However, the electron transporting property, the electron injecting property,
When a material having various functions such as a hole transporting property, a hole injecting property, and a light emitting property is used for a plurality of light emitting elements, in an organic polymer material, phase separation or the like often occurs at the time of mixing, and there is a problem in performance. I understand. Also, it has been found that there is a problem in terms of durability even when a low-molecular compound is used in a mixture with a polymer material.
【0005】上記の欠点を改良する試みとして、種々の
機能を有するモノマー同士を共重合する方法が考えられ
るが、発明者がこの方法を種々検討してみたところ、単
純な共重合体では十分な性能が得られないことがわかっ
た。[0005] In an attempt to improve the above drawbacks, a method of copolymerizing monomers having various functions can be considered. The inventors of the present invention have studied various methods and found that a simple copolymer is not sufficient. It turned out that performance could not be obtained.
【0006】一般に発光素子では、正孔輸送性化合物と
電子輸送性化合物を積層もしくは同一層に使用して、発
光効率を向上させることが可能である。発明者は、塗布
型有機EL素子において材料を複数使用する素子の検討を
行ってきた。塗布型の発光素子に使用する発光素子材料
としては、正孔輸送性化合物としてピロール、チオフェ
ン、フランなどの電子過剰性へテロ芳香族化合物が有効
である。また、電子輸送性化合物としてはヘテロ含子を
複数含む電子欠損性ヘテロ芳香族化合物が有効である。
しかしながら、先述の通り、複数の機能性材料を発光素
子に使用する場合、有機高分子材料同士では、低い発光
性能しか得られないことがわかった。また、低分子化合
物をポリマー材料と混合して使用した場合には、耐久性
の面で問題があることがわかった。In general, in a light emitting device, it is possible to improve the luminous efficiency by using a hole transporting compound and an electron transporting compound in a laminated or the same layer. The inventor has studied an element using a plurality of materials in a coating type organic EL element. As a light-emitting element material used for a coating type light-emitting element, an electron-rich heteroaromatic compound such as pyrrole, thiophene, or furan is effective as a hole-transporting compound. Further, as the electron transporting compound, an electron-deficient heteroaromatic compound containing a plurality of heteroconstituents is effective.
However, as described above, it has been found that when a plurality of functional materials are used in a light-emitting element, only low emission performance can be obtained between organic polymer materials. It was also found that when a low molecular compound was used in a mixture with a polymer material, there was a problem in durability.
【0007】[0007]
【発明が解決しようとする課題】本発明の目的は、第1
に新規なポリマーを開発することにある。そして第2
に、それを使用した高輝度で、かつ良好な発光効率で発
光し、耐久性に優れた発光素子を開発することにある。SUMMARY OF THE INVENTION The object of the present invention is as follows.
To develop new polymers. And the second
Another object of the present invention is to develop a light-emitting element which emits light with high luminance and good luminous efficiency and has excellent durability.
【0008】[0008]
【課題を解決するための手段】本発明は、下記に記載の
ポリマーおよび発光素子によって達成された。 1. 下記一般式(1)で表されるポリマー。Means for Solving the Problems The present invention has been achieved by the following polymer and light emitting device. 1. A polymer represented by the following general formula (1).
【0009】[0009]
【化2】 Embedded image
【0010】(式中、Aは同一モノマーユニット内にホ
ール輸送性の部分構造と電子輸送性の部分構造を含むモ
ノマーユニットを表す。Bはそれ以外の構造を有するモ
ノマーユニットを表す。mは1以上の整数を表し、nは0
以上の整数を表す。p及びqはそれぞれモル分率(%)を
意味し、pは1〜100(%)を表し、qは0〜99
(%)を表す。p+q=100(%)である。) 2. 一般式(1)中のA中に含まれる、ホール輸送性
の部分構造の少なくとも1つがピロール、チオフェン、
フラン、もしくはその縮合環誘導体を含むモノマーユニ
ットであることを特徴とする前記1に記載のポリマー。 3. 一般式(1)中のA中に含まれる、電子輸送性の
部分構造の少なくとも1つが、1つの環系に2つ以上の
ヘテロ原子を含有するヘテロ環誘導体を含むモノマーユ
ニットであることを特徴とする前記1に記載のポリマ
ー。 4. 一般式(1)中のAまたはBで表されるモノマー
ユニットの少なくとも1つが炭素数4以上のバラスト基
を含有することを特徴とする前記1〜3に記載のポリマ
ー。 5. 一般式(1)中のモノマーユニットがビニルモノ
マーユニットであることを特徴とする前記1〜4に記載
のポリマー。 6. 陽極、陰極間に、少なくとも1種以上のポリマー
を塗設して成る発光素子において、該ポリマーの少なく
とも1つが前記1〜5に記載のポリマーを含有すること
を特徴とする発光素子。 7. 発光材料として三重項励起子からの発光が可能な
発光材料を、少なくとも1種使用することを特徴とする
前記1〜6に記載の発光素子。Wherein A represents a monomer unit having a hole transporting partial structure and an electron transporting partial structure in the same monomer unit, B represents a monomer unit having another structure, and m represents 1 Where n is 0
Represents the above integer. p and q each represent a mole fraction (%), p represents 1 to 100 (%), and q represents 0 to 99.
(%). p + q = 100 (%). ) 2. At least one of the hole transporting partial structures contained in A in the general formula (1) is pyrrole, thiophene,
2. The polymer according to the above item 1, which is a monomer unit containing furan or a fused ring derivative thereof. 3. At least one of the electron-transporting partial structures contained in A in the general formula (1) is a monomer unit containing a heterocyclic derivative containing two or more heteroatoms in one ring system. 2. The polymer according to the above 1, wherein 4. 4. The polymer according to any one of the above items 1 to 3, wherein at least one of the monomer units represented by A or B in the general formula (1) contains a ballast group having 4 or more carbon atoms. 5. The polymer according to any one of the above 1 to 4, wherein the monomer unit in the general formula (1) is a vinyl monomer unit. 6. A light-emitting device comprising at least one polymer coated between an anode and a cathode, wherein at least one of the polymers contains the polymer described in any one of (1) to (5). 7. 7. The light-emitting device according to any one of 1 to 6, wherein at least one light-emitting material capable of emitting light from a triplet exciton is used as the light-emitting material.
【0011】[0011]
【発明の実施の形態】以下、本発明について詳細に説明
する。なお本明細書において「〜」はその前後に記載さ
れる数値を、それぞれ最小値および最大値として含む範
囲を示す。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. In this specification, “to” indicates a range including numerical values described before and after it as a minimum value and a maximum value, respectively.
【0012】はじめに一般式(1)で表されるポリマー
について説明する。式中、Aは同一モノマーユニット内
にホール輸送性の部分構造と電子輸送性の部分構造を含
むモノマーユニットを表す。本発明におけるモノマーユ
ニットとは、繰り返し単位を意味する。本発明のモノマ
ーユニット内にホール輸送性の部分構造と電子輸送性の
部分構造が存在するが、ポリマー主鎖からの2つの部分
構造の順序および距離は特に制限されない。ホール輸送
性の部分構造の代表的な化合物群としては、第一に1〜
3級窒素原子を有する化合物、すなわちアミン誘導体が
挙げられる。その中でも、芳香族炭化水素あるいはヘテ
ロ芳香族化合物が置換したアミンが好ましく、特にその
中でも、置換基のすべてが芳香族炭化水素、あるいはヘ
テロ芳香族化合物である3級アミンが好ましい。First, the polymer represented by the general formula (1) will be described. In the formula, A represents a monomer unit having a hole transporting partial structure and an electron transporting partial structure in the same monomer unit. The monomer unit in the present invention means a repeating unit. Although the hole transporting partial structure and the electron transporting partial structure exist in the monomer unit of the present invention, the order and distance of the two partial structures from the polymer main chain are not particularly limited. As a representative group of compounds having a hole transporting partial structure,
A compound having a tertiary nitrogen atom, that is, an amine derivative is exemplified. Among them, amines substituted by an aromatic hydrocarbon or a heteroaromatic compound are preferable, and particularly, a tertiary amine in which all of the substituents are an aromatic hydrocarbon or a heteroaromatic compound is preferable.
【0013】次に、電子過剰なヘテロ芳香族化合物につ
いて説明する。例として、ヘテロ原子が環構造の中に1
つ含まれる5員環型のヘテロ芳香族、並びにこれら同
士、あるいは芳香族炭化水素と縮合したタイプの化合物
を挙げることができる。その一例を列挙すると、例えば
ピロール、チオフェン、フラン、インドール、カルバゾ
ール、ベンゾチオフェン、ベンゾフラン、ジベンゾチオ
フェン、ジベンゾフラン、インドリジンなどを挙げるこ
とができる。さらに、窒素原子を有する化合物として、
ヒドラゾン化合物、ピラゾロン化合物、ヒドロキシルア
ミン化合物、アルコキシアミン化合物なども正孔輸送性
の基として使用可能である。Next, an electron-excess heteroaromatic compound will be described. As an example, if the heteroatom has 1
And a five-membered heteroaromatic, and a compound condensed with each other or with an aromatic hydrocarbon. To list one example, for example, pyrrole, thiophene, furan, indole, carbazole, benzothiophene, benzofuran, dibenzothiophene, dibenzofuran, indolizine and the like can be mentioned. Further, as a compound having a nitrogen atom,
Hydrazone compounds, pyrazolone compounds, hydroxylamine compounds, alkoxyamine compounds and the like can also be used as the hole transporting group.
【0014】上記の環構造群の中でも、本発明において
はピロール、チオフェン、フランならびにその芳香族お
よびヘテロ芳香族縮合環誘導体を含むものが好ましい。
ピロール、チオフェン、フランはπ電子過剰ヘテロ芳香
族環と称される一群の構造に属する化合物群であり、本
発明ではその誘導体を含むモノマーユニットを使用す
る。Among the above-mentioned ring structures, those containing pyrrole, thiophene, furan and their aromatic and heteroaromatic condensed ring derivatives are preferred in the present invention.
Pyrrole, thiophene, and furan are a group of compounds belonging to a group of structures called a π-electron-rich heteroaromatic ring, and the present invention uses a monomer unit containing a derivative thereof.
【0015】上記誘導体としては、ピロール、チオフェ
ン、フランのベンゾ縮合体(例えばインドール、カルバ
ゾール、ベンゾチオフェン、ジベンゾチオフェン、ベン
ゾフラン、ジベンゾフラン等)を挙げることができる。
その他に、インドリジン、チエノチオフェン、チエノピ
ロール、イソインドールなどを挙げることができる。こ
れらの中でも、本発明ではピロール誘導体を含むモノマ
ーユニットが好ましく、特にカルバゾールが好ましく使
用される。Examples of the above derivatives include benzo condensates of pyrrole, thiophene, and furan (eg, indole, carbazole, benzothiophene, dibenzothiophene, benzofuran, dibenzofuran, etc.).
Other examples include indolidine, thienothiophene, thienopyrrole, and isoindole. Among these, in the present invention, a monomer unit containing a pyrrole derivative is preferable, and carbazole is particularly preferably used.
【0016】電子輸送性の部分構造について述べる。電
子輸送性を有する基としては、当該分野では種々の構造
の化合物が公知であり、特にヘテロ芳香族環が有効な基
として使用される。The electron transporting partial structure will be described. As the group having an electron transporting property, compounds having various structures are known in the art, and a heteroaromatic ring is particularly used as an effective group.
【0017】上記ヘテロ芳香族環として、2つ以上のヘ
テロ原子を有する含窒素5員環型ヘテロ芳香族化合物が
挙げられる。その例として、ピラゾール、イミダゾー
ル、オキサゾール、チアゾール、トリアゾール(1,2,3-
および1,2,4-)、テトラゾール、オキサジアゾール(1,2,
4-, 1,2,5-および1,3,4-)、チアジアゾール(1,2,4-, 1,
2,5-および1,3,4-)、などを挙げることができる。これ
ら同士、あるいは芳香族炭化水素と縮合したタイプの化
合物も同様に使用可能である。The heteroaromatic ring includes a nitrogen-containing 5-membered heteroaromatic compound having two or more heteroatoms. Examples include pyrazole, imidazole, oxazole, thiazole, triazole (1,2,3-
And 1,2,4-), tetrazole, oxadiazole (1,2,
4-, 1,2,5- and 1,3,4-), thiadiazole (1,2,4-, 1,
2,5- and 1,3,4-). Compounds condensed with each other or with an aromatic hydrocarbon can be used in the same manner.
【0018】また同様に上記ヘテロ芳香族環として、環
電子不足の含窒素6員環型ヘテロ芳香族化合物が挙げら
れる。その例として、ピリジン、ピリダジン、ピリミジ
ン、ピリダジン、トリアジンなどを挙げることができ
る。これらの化合物についても、これら同士、あるいは
芳香族炭化水素、5員並びに6員環型のヘテロ芳香族と
縮合したタイプの化合物も同様に使用可能である。その
一例としては、例えばキナゾリン、キノキサリンなどを
挙げることができる。Similarly, examples of the heteroaromatic ring include nitrogen-containing 6-membered heteroaromatic compounds lacking ring electrons. Examples thereof include pyridine, pyridazine, pyrimidine, pyridazine, triazine and the like. As for these compounds, compounds which are condensed with each other or with aromatic hydrocarbons, 5-membered and 6-membered heteroaromatics can also be used. Examples thereof include quinazoline and quinoxaline.
【0019】本発明では、上記ヘテロ芳香族環としてそ
の中でも、1つの環系に2つ以上のヘテロ原子を含有す
るヘテロ環誘導体を含むものが好ましい。このようなヘ
テロ環としては、イミダゾール、ピラゾール、ピリダジ
ン、ピリミジン、ピラジン、オキサゾール、チアゾー
ル、イソオキサゾール、イソチアゾール、トリアゾー
ル、テトラゾール、オキサジアゾール、チアジアゾール
等、およびその縮合環を挙げることができる。本発明で
はこの中でも特に1,3,4-オキサジアゾール誘導体が好ま
しく使用される。In the present invention, the heteroaromatic ring is preferably a heteroaromatic ring containing a heterocyclic derivative containing two or more heteroatoms in one ring system. Examples of such a hetero ring include imidazole, pyrazole, pyridazine, pyrimidine, pyrazine, oxazole, thiazole, isoxazole, isothiazole, triazole, tetrazole, oxadiazole, thiadiazole, and the like, and a condensed ring thereof. In the present invention, among these, 1,3,4-oxadiazole derivatives are particularly preferably used.
【0020】本発明において、上記のようなホール輸送
性と電子輸送性という2つの性質を有する構造が、同一
ユニット内に含有されるモノマーから誘導されるポリマ
ーを使用する。In the present invention, the polymer having the two properties of the hole transporting property and the electron transporting property described above uses a polymer derived from a monomer contained in the same unit.
【0021】一般式(1)におけるBは、A以外の構造
を有するモノマーユニットを表す。ポリマーを形成する
際のモノマーユニットの重合様式はビニル重合、縮重
合、開環重合、アリールカップリング重合等、種々の重
合反応によるポリマー形成を行うことができるが、本発
明では特にビニル重合モノマーの重合によるポリマー形
成反応が好ましい。Bのモノマーユニットとして、ビニ
ル重合モノマー(例えばスチレン、アクリル酸エステ
ル、メタクリル酸エステル、ビニルエーテル、置換アリ
ル等)が好ましい。B in the general formula (1) represents a monomer unit having a structure other than A. The polymerization mode of the monomer unit when forming the polymer can be formed by various polymerization reactions such as vinyl polymerization, polycondensation, ring-opening polymerization, and aryl coupling polymerization. A polymer forming reaction by polymerization is preferred. As the monomer unit of B, a vinyl polymerized monomer (for example, styrene, acrylate, methacrylate, vinyl ether, substituted allyl, etc.) is preferable.
【0022】また、Bのユニットとして、ホール輸送性
のみを有するモノマーユニットや、電子輸送性のみを有
するモノマーユニットを用いることも可能である。As the B unit, a monomer unit having only a hole transporting property or a monomer unit having only an electron transporting property can be used.
【0023】本発明のポリマーでは、A,Bの少なくと
も1つのモノマーユニット中に、炭素数4以上のバラス
ト基が置換されているものが好ましく用いられる。バラ
スト基とは、炭素数4以上の油溶性基のことを表し、本
発明のポリマーを有機溶媒に可溶化させるために導入さ
れる。 該バラスト基としては、アルキル基、アルコキ
シ基、エステル基、アミド基、スルホンアミド基等を挙
げることができる。また、これらが2つ以上の結合手を
持ち、連結している場合も含まれる。本発明で使用され
るバラスト基として好ましくはアルキル基、アルコキシ
基であり、その炭素数は4以上、好ましくは8以上20
以下であって、直鎖状および分岐のいずれも使用可能で
ある。In the polymer of the present invention, a polymer in which at least one monomer unit of A and B is substituted with a ballast group having 4 or more carbon atoms is preferably used. The ballast group refers to an oil-soluble group having 4 or more carbon atoms, and is introduced to solubilize the polymer of the present invention in an organic solvent. Examples of the ballast group include an alkyl group, an alkoxy group, an ester group, an amide group, and a sulfonamide group. In addition, the case where these have two or more bonds and are connected is also included. The ballast group used in the present invention is preferably an alkyl group or an alkoxy group, and has 4 or more carbon atoms, preferably 8 to 20 carbon atoms.
In the following, both linear and branched ones can be used.
【0024】一般式(1)中、mは1以上の整数を表
し、nは0以上の整数を表す。pは1〜100の整数を表
し、qは0〜99の整数を表す。p+q=100である。m
として好ましくは1〜3、nとして好ましくは0〜2であ
り、さらに好ましくはmが1〜2、nが0である。pとして
好ましくは10〜100、qとして好ましくは0〜90
であり、さらに好ましくはpが50〜100、qが0〜5
0である。In the general formula (1), m represents an integer of 1 or more, and n represents an integer of 0 or more. p represents an integer of 1 to 100, and q represents an integer of 0 to 99. p + q = 100. m
Are preferably 1 to 3, and n is preferably 0 to 2, and more preferably m is 1 to 2 and n is 0. p is preferably 10 to 100, and q is preferably 0 to 90.
And more preferably p is 50 to 100 and q is 0 to 5
0.
【0025】本発明のモノマーユニットには、バラスト
基としての機能のもの以外にも種々の置換基が置換可能
である。その例を以下に列挙する。ハロゲン原子(例え
ばフッ素原子、塩素原子、臭素原子、ヨウ素原子)、シ
アノ基、ホルミル基、もしくは置換あるいは無置換のア
ルキル基(好ましくは炭素数1〜30、より好ましくは炭
素数1〜15である。例えば、メチル基、t−ブチル基、
シクロヘキシル基などが挙げられる。)、アルケニル基
(好ましくは炭素数2〜30、より好ましくは炭素数2〜15
である。例えば、ビニル基、1-プロペニル基、1-ブテン
-2-イル基、シクロヘキセン-1-イル基などが挙げられ
る。)、アルキニル基(好ましくは炭素数2〜30、より
好ましくは炭素数2〜15である。例えばエチニル基、1-
プロピニル基などが挙げられる。)、アリール基(好ま
しくは炭素数6〜30、より好ましくは炭素数6〜15であ
る。例えば、フェニル基、トリル基、キシリル基、ナフ
チル基、ビフェニリル基、ピレニル基などが挙げられ
る。)、The monomer unit of the present invention can be substituted with various substituents other than those having a function as a ballast group. Examples are listed below. Halogen atom (for example, fluorine atom, chlorine atom, bromine atom, iodine atom), cyano group, formyl group, or substituted or unsubstituted alkyl group (preferably having 1 to 30 carbon atoms, more preferably having 1 to 15 carbon atoms) For example, a methyl group, a t-butyl group,
And a cyclohexyl group. ), An alkenyl group (preferably having 2 to 30 carbon atoms, more preferably having 2 to 15 carbon atoms)
It is. For example, vinyl group, 1-propenyl group, 1-butene
-2-yl group, cyclohexen-1-yl group and the like. ), An alkynyl group (preferably having 2 to 30 carbon atoms, more preferably having 2 to 15 carbon atoms. For example, an ethynyl group, 1-
And a propynyl group. ), An aryl group (preferably having 6 to 30 carbon atoms, more preferably having 6 to 15 carbon atoms, such as phenyl, tolyl, xylyl, naphthyl, biphenylyl, and pyrenyl).
【0026】ヘテロ環基(好ましくは5または6員環で
あり、他の環と縮合しても良い。ヘテロ原子としては、
例えば窒素原子、酸素原子、硫黄原子が挙げられる。好
ましくは炭素数2〜30、より好ましくは炭素数2〜15であ
る。例えば、ピリジル基、ピペリジル基、オキサゾリル
基、オキサジアゾリル基、テトラヒドロフリル基、チエ
ニル基などが挙げられる。)、1〜3級アミノ基(アミ
ノ基、アルキルアミノ基、アリールアミノ基、ジアルキ
ルアミノ基、ジアリールアミノ基、アルキルアリールア
ミノ基、ヘテロ環アミノ基、ビスヘテロ環アミノ基な
ど。好ましくは3級アミノ基であり、炭素数1〜30、よ
り好ましくは炭素数1〜16である。例えばジメチルアミ
ノ基、ジフェニルアミノ基、フェニルナフチルアミノ基
などが挙げられる。)、イミノ基(-CR11=NR12または-N
=CR13R14で表される基。ここでR11〜R14は水素原子、ア
ルキル基、アリール基、ヘテロ環基、アルコキシ基、ア
リールオキシ基、1〜3級アミノ基から選ばれる基であ
る。好ましくは炭素数1〜30、より好ましくは炭素数1〜
15である。)、A heterocyclic group (preferably a 5- or 6-membered ring, which may be condensed with another ring.
Examples include a nitrogen atom, an oxygen atom, and a sulfur atom. It preferably has 2 to 30 carbon atoms, more preferably 2 to 15 carbon atoms. For example, a pyridyl group, a piperidyl group, an oxazolyl group, an oxadiazolyl group, a tetrahydrofuryl group, a thienyl group and the like can be mentioned. ), Primary to tertiary amino groups (amino group, alkylamino group, arylamino group, dialkylamino group, diarylamino group, alkylarylamino group, heterocyclic amino group, bisheterocyclic amino group, etc., preferably tertiary amino group , and the 1 to 30 carbon atoms, more preferably 1 to 16 carbon atoms. such as dimethylamino group, diphenylamino group, and a phenyl naphthyl amino group.), an imino group (-CR 11 = NR 12 or -N
= Group represented by CR 13 R 14 . Here, R 11 to R 14 are groups selected from a hydrogen atom, an alkyl group, an aryl group, a heterocyclic group, an alkoxy group, an aryloxy group and a primary to tertiary amino group. Preferably 1 to 30 carbon atoms, more preferably 1 to 30 carbon atoms
It is 15. ),
【0027】アルコキシ基(好ましくは炭素数1〜30、
より好ましくは炭素数1〜15である。例えば、メトキシ
基、エトキシ基、シクロヘキシルオキシ基などが挙げら
れる。)、アリールオキシ基(好ましくは炭素数6〜3
0、より好ましくは炭素数6〜15である。例えば、フェノ
キシ基、1-ナフトキシ基、4-フェニルフェノキシ基シな
どが挙げられる。)、アルキルチオ基(好ましくは炭素
数1〜30、より好ましくは炭素数1〜15である。例えば、
メチルチオ基、エチルチオ基、シクロヘキシルチオ基な
どが挙げられる。)、アリールチオ基(好ましくは炭素
数6〜30、より好ましくは炭素数6〜15である。例えば、
フェニルチオ基、トリルチオ基などが挙げられる。)カ
ルボンアミド基(好ましくは炭素数1〜30、より好まし
くは炭素数1〜15である。例えば、アセトアミド基、ベ
ンゾイルアミド基、N-メチルベンゾイルアミド基などが
挙げられる。)、スルホンアミド基(好ましくは炭素数
1〜30、より好ましくは炭素数1〜15である。例えば、メ
タンスルホンアミド基、ベンゼンスルホンアミド基、p-
トルエンスルホンアミド基などが挙げられる。)、カル
バモイル基(好ましくは炭素数1〜30、より好ましくは
炭素数1〜15である。例えば、無置換のカルバモイル
基、メチルカルバモイル基、ジメチルカルバモイル基、
フェニルカルバモイル基、ジフェニルカルバモイル基、
ジオクチルカルバモイル基などが挙げられる。)、An alkoxy group (preferably having 1 to 30 carbon atoms;
More preferably, it has 1 to 15 carbon atoms. For example, a methoxy group, an ethoxy group, a cyclohexyloxy group and the like can be mentioned. ), An aryloxy group (preferably having 6 to 3 carbon atoms)
It has 0, more preferably 6 to 15 carbon atoms. For example, a phenoxy group, a 1-naphthoxy group, a 4-phenylphenoxy group and the like can be mentioned. ), An alkylthio group (preferably having 1 to 30 carbon atoms, more preferably having 1 to 15 carbon atoms.
Examples thereof include a methylthio group, an ethylthio group, and a cyclohexylthio group. ), An arylthio group (preferably having 6 to 30 carbon atoms, more preferably having 6 to 15 carbon atoms.
Examples include a phenylthio group and a tolylthio group. ) Carbonamide group (preferably having 1 to 30 carbon atoms, more preferably having 1 to 15 carbon atoms, for example, acetamido group, benzoylamide group, N-methylbenzoylamide group, etc.), sulfonamido group ( Preferably carbon number
It has 1 to 30, more preferably 1 to 15 carbon atoms. For example, methanesulfonamide group, benzenesulfonamide group, p-
And a toluenesulfonamide group. ), A carbamoyl group (preferably having 1 to 30 carbon atoms, more preferably having 1 to 15 carbon atoms. For example, an unsubstituted carbamoyl group, a methylcarbamoyl group, a dimethylcarbamoyl group,
Phenylcarbamoyl group, diphenylcarbamoyl group,
And a dioctylcarbamoyl group. ),
【0028】スルファモイル基(好ましくは炭素数1〜3
0、より好ましくは炭素数1〜15である。例えば、無置換
のスルファモイル基、メチルスルファモイル基、ジメチ
ルスルファモイル基、フェニルスルファモイル基、ジフ
ェニルスルファモイル基、ジオクチルスルファモイル基
などが挙げられる。)、アルキルカルボニル基(好まし
くは炭素数1〜30、より好ましくは炭素数1〜15である。
例えば、アセチル基、プロピオニル基、ブチロイル基、
ラウロイル基などが挙げられる。)、アリールカルボニ
ル基(好ましくは炭素数6〜30、より好ましくは炭素数6
〜15である。例えば、ベンゾイル基、ナフトイル基など
が挙げられる。)、アルキルスルホニル基(好ましくは
炭素数1〜30、より好ましくは炭素数1〜15である。例え
ば、メタンスルホニル基、エタンスルホニル基などが挙
げられる。)、アリールスルホニル基(好ましくは炭素
数6〜30、より好ましくは炭素数6〜15である。例えば、
ベンゼンスルホニル基、p-トルエンスルホニル基、1-ナ
フタレンスルホニル基などが挙げられる。)、Sulfamoyl group (preferably having 1 to 3 carbon atoms)
It has 0, more preferably 1 to 15 carbon atoms. Examples include an unsubstituted sulfamoyl group, methylsulfamoyl group, dimethylsulfamoyl group, phenylsulfamoyl group, diphenylsulfamoyl group, dioctylsulfamoyl group, and the like. ), An alkylcarbonyl group (preferably having 1 to 30 carbon atoms, more preferably having 1 to 15 carbon atoms).
For example, an acetyl group, a propionyl group, a butyroyl group,
Lauroyl group and the like. ), An arylcarbonyl group (preferably having 6 to 30 carbon atoms, more preferably having 6 carbon atoms)
~ 15. Examples include a benzoyl group and a naphthoyl group. ), An alkylsulfonyl group (preferably having 1 to 30 carbon atoms, more preferably 1 to 15 carbon atoms, such as a methanesulfonyl group and an ethanesulfonyl group), and an arylsulfonyl group (preferably having 6 carbon atoms). -30, more preferably 6-15 carbon atoms.
Examples thereof include a benzenesulfonyl group, a p-toluenesulfonyl group, and a 1-naphthalenesulfonyl group. ),
【0029】アルコキシカルボニル基(好ましくは炭素
数1〜30、より好ましくは炭素数1〜15である。例えば、
メトキシカルボニル基、エトキシカルボニル基、ブトキ
シカルボニル基などが挙げられる。)、アリールオキシ
カルボニル基(好ましくは炭素数6〜30、より好ましく
は炭素数6〜15である。例えばフェノキシカルボニル
基、1-ナフトキシカルボニル基などが挙げられる。)、
アルキルカルボニルオキシ基(好ましくは炭素数1〜3
0、より好ましくは炭素数1〜15である。例えば、アセト
キシ基、プロピオニルオキシ基、ブチロイルオキシ基な
どが挙げられる。)、アリールカルボニルオキシ基(好
ましくは炭素数6〜30、より好ましくは炭素数6〜15であ
る。例えばベンゾイルオキシ基、1-ナフトイルオキシ基
などが挙げられる。)、ウレタン基(好ましくは炭素数
1〜30、より好ましくは炭素数1〜15である。例えば、メ
トキシカルボンアミド基、フェノキシカルボンアミド
基、メチルアミノカルボンアミド基などが挙げられ
る。)、ウレイド基(好ましくは炭素数1〜30、より好
ましくは炭素数1〜15である。例えば、メチルアミノカ
ルボンアミド基、ジメチルアミノカルボンアミド基、ジ
フェニルアミノカルボンアミド基などが挙げられ
る。)、炭酸エステル基(好ましくは炭素数1〜30、よ
り好ましくは炭素数1〜15である。例えば、メトキシカ
ルボニルオキシ基、フェノキシカルボニルオキシ基など
が挙げられる。)などである。以下に好ましいモノマー
ユニットの具体例、それに続いて具体的な合成反応例を
ルートともに示すが、本発明はもちろんこれによって限
定されるものではない。An alkoxycarbonyl group (preferably having 1 to 30 carbon atoms, more preferably having 1 to 15 carbon atoms. For example,
Examples thereof include a methoxycarbonyl group, an ethoxycarbonyl group, and a butoxycarbonyl group. ), An aryloxycarbonyl group (preferably having 6 to 30 carbon atoms, more preferably having 6 to 15 carbon atoms, such as a phenoxycarbonyl group and a 1-naphthoxycarbonyl group).
An alkylcarbonyloxy group (preferably having 1 to 3 carbon atoms)
It has 0, more preferably 1 to 15 carbon atoms. For example, an acetoxy group, a propionyloxy group, a butyroyloxy group and the like can be mentioned. ), An arylcarbonyloxy group (preferably having 6 to 30 carbon atoms, more preferably having 6 to 15 carbon atoms, such as a benzoyloxy group and a 1-naphthoyloxy group), a urethane group (preferably having number
It has 1 to 30, more preferably 1 to 15 carbon atoms. For example, a methoxycarbonamide group, a phenoxycarbonamide group, a methylaminocarbonamide group and the like can be mentioned. ), A ureido group (preferably having 1 to 30 carbon atoms, more preferably having 1 to 15 carbon atoms. Examples thereof include a methylaminocarbonamide group, a dimethylaminocarbonamide group, and a diphenylaminocarbonamide group). And a carbonic ester group (preferably having 1 to 30 carbon atoms, more preferably having 1 to 15 carbon atoms, such as a methoxycarbonyloxy group and a phenoxycarbonyloxy group). Hereinafter, specific examples of preferred monomer units and subsequent specific synthesis reaction examples are shown together with routes, but the present invention is of course not limited thereto.
【0030】[0030]
【化3】 Embedded image
【0031】[0031]
【化4】 Embedded image
【0032】(モノマーの具体的合成方法)(Specific method of synthesizing monomer)
【0033】[0033]
【化5】 Embedded image
【0034】1)モノマーA−1の合成 (化合物X-1の合成)温度計とリフラックスコンデンサ
ーを取り付けた1000mlの三つ口フラスコにテトラヒドロ
フラン300ml、カルバゾール50.1g(0.3mol)、4-ブロモメ
チル安息香酸メチルエステル68.9g(0.3mol)を仕込ん
だ。磁気撹拌子を用いて内容物を撹拌しながら、ここに
カリウム-t-ブトキシド33.6g(0.3mol)を内温が30℃を越
えないように徐々に添加した。添加終了後、室温で1時
間撹拌の後、還流条件下5時間反応させた。反応終了
後、反応混合物を5リットルの水に注ぐと結晶が析出し
た。この結晶をエタノールから再結晶して化合物X-1の
結晶85gを得た。1) Synthesis of Monomer A-1 (Synthesis of Compound X-1) In a 1000 ml three-necked flask equipped with a thermometer and a reflux condenser, 300 ml of tetrahydrofuran, 50.1 g (0.3 mol) of carbazole, 4-bromomethylbenzoate 68.9 g (0.3 mol) of acid methyl ester was charged. While stirring the contents using a magnetic stirrer, 33.6 g (0.3 mol) of potassium-t-butoxide was gradually added thereto so that the internal temperature did not exceed 30 ° C. After completion of the addition, the mixture was stirred at room temperature for 1 hour, and reacted under reflux condition for 5 hours. After completion of the reaction, the reaction mixture was poured into 5 liters of water to precipitate crystals. The crystals were recrystallized from ethanol to obtain 85 g of compound X-1 as crystals.
【0035】(化合物X-2の合成)温度計とリフラック
スコンデンサーを取り付けた1000mlの三つ口フラスコ
に、化合物X-1 126g(0.4mol)、エタノール350ml、ヒド
ラジン1水和物200mlNを仕込み、磁気撹拌子を用いて撹
拌しながら、還流条件下5時間反応させた。反応終了
後、反応混合物を5リットルの水に注ぐと結晶が析出し
た。この結晶をエタノールから再結晶して化合物X-2の
結晶110gを得た。(Synthesis of Compound X-2) In a 1000 ml three-necked flask equipped with a thermometer and a reflux condenser, 126 g (0.4 mol) of compound X-1, 350 ml of ethanol and 200 ml of hydrazine monohydrate were charged. The reaction was carried out for 5 hours under reflux conditions while stirring using a magnetic stirrer. After completion of the reaction, the reaction mixture was poured into 5 liters of water to precipitate crystals. The crystals were recrystallized from ethanol to obtain 110 g of compound X-2.
【0036】(化合物X-3の合成)温度計とリフラック
スコンデンサーを取り付けた2000mlの三つ口フラスコ
に、化合物X-2 126g(0.4mol)、N,N-ジメチルアセトア
ミド600mlを仕込んだ。磁気撹拌子を用いて内容物を撹
拌しながら、ここに氷−メタノール浴を取り付け、内温
を0℃まで低下させた。ここに、4-ブロモベンゾイルク
ロリド88g(0.4mol)を内温が20℃を越えないように徐々
に滴下した。反応は発熱的に瞬時に起こり、不溶性の白
色結晶が析出した。滴下終了後、室温でさらに30分反
応させた。反応終了後、アセトニトリル600mlを加えて
生成物の結晶を完全に析出させた。析出した結晶を、ヌ
ッチェを用いて減圧下濾別した。この結晶をアセトニト
リルで洗浄して、化合物X-3の結晶200gを得た。(Synthesis of Compound X-3) In a 2000 ml three-necked flask equipped with a thermometer and a reflux condenser, 126 g (0.4 mol) of Compound X-2 and 600 ml of N, N-dimethylacetamide were charged. While stirring the contents using a magnetic stirrer, an ice-methanol bath was attached thereto, and the internal temperature was lowered to 0 ° C. Here, 88 g (0.4 mol) of 4-bromobenzoyl chloride was gradually added dropwise so that the internal temperature did not exceed 20 ° C. The reaction exothermed instantaneously and insoluble white crystals precipitated. After the completion of the dropwise addition, the reaction was further performed at room temperature for 30 minutes. After completion of the reaction, 600 ml of acetonitrile was added to completely precipitate crystals of the product. The precipitated crystals were separated by filtration under reduced pressure using a Nutsche. The crystals were washed with acetonitrile to obtain 200 g of Compound X-3 as crystals.
【0037】(化合物X-4の合成)温度計とリフラック
スコンデンサーを取り付けた2000mlの三つ口フラスコ
に、化合物X-3の結晶200g、ポリリン酸1000gを仕込み、
油浴を用いて加熱した。始め内容物は粘稠だが、内温が
100℃を越えるあたりから流動性を持つようになる。こ
の混合物を、撹拌バネを用いて撹拌しながら、内温160
〜180℃の条件下5時間反応させた。反応終了後、内温
が100℃付近まで低下したところで、内容物を冷水に加
えた。温度が上昇するとともに、白色結晶が析出した。
この結晶をテトラヒドロフラン/エタノールの混合溶媒
から再結晶して、化合物X-4の結晶147gを得た。(Synthesis of Compound X-4) A 2000 ml three-necked flask equipped with a thermometer and a reflux condenser was charged with 200 g of the compound X-3 crystal and 1000 g of polyphosphoric acid.
Heated using an oil bath. Initially the contents are viscous, but the internal temperature
It becomes fluid from around 100 ° C. While stirring this mixture using a stirring spring, the internal temperature was 160
The reaction was carried out for 5 hours at ~ 180 ° C. After the completion of the reaction, when the internal temperature had dropped to around 100 ° C., the contents were added to cold water. As the temperature rose, white crystals precipitated.
The crystals were recrystallized from a mixed solvent of tetrahydrofuran / ethanol to obtain 147 g of compound X-4 as crystals.
【0038】(モノマーA−1の合成)温度計とリフラッ
クスコンデンサーを取り付けた2000mlの三つ口フラスコ
に、化合物X-4 72g(0.3mol)、重合禁止剤として、2,6-
ジ-t-ブチル-4-メチルフェノール7g、トリフェニルホス
フィン1g、10質量%パラジウム担持活性炭素触媒5g、4-
フェニルボロン酸74g(0.5mol)、炭酸ナトリウム106g
(1.0mol)、ジエチレングリコールジメチルエーテル50
0ml、水50mlを仕込み、撹拌バネを用いて撹拌しなが
ら、還流条件下5時間反応させた。反応終了後、ここに
ジエチレングリコールジメチルエーテル500mlをさらに
加え、熱時セライトを敷いたヌッチェを用いて減圧濾過
することにより、触媒を濾別した。濾液にメタノール1
リットルを加えると生成物の結晶が析出するので、冷却
後これを濾別した。この粗結晶をテトラヒドロフラン/
エタノールの混合溶媒から再結晶して、モノマーA−1
の結晶77gを得た。(Synthesis of Monomer A-1) In a 2000 ml three-necked flask equipped with a thermometer and a reflux condenser, 72 g (0.3 mol) of the compound X-4, 2,6-
7 g of di-t-butyl-4-methylphenol, 1 g of triphenylphosphine, 5 g of 10% by mass palladium-supported activated carbon catalyst, 4-g
74 g (0.5 mol) of phenylboronic acid, 106 g of sodium carbonate
(1.0 mol), diethylene glycol dimethyl ether 50
0 ml and 50 ml of water were charged and reacted under reflux conditions for 5 hours while stirring using a stirring spring. After the reaction was completed, 500 ml of diethylene glycol dimethyl ether was further added thereto, and the catalyst was removed by filtration under reduced pressure using a hot Nutsche lined with celite. Methanol 1 in the filtrate
Addition of 1 liter resulted in precipitation of product crystals, which were filtered off after cooling. This crude crystal is treated with tetrahydrofuran /
Recrystallization from a mixed solvent of ethanol gave monomer A-1.
77 g of crystals were obtained.
【0039】さらに上記モノマーの重合反応により形成
されるポリマー化合物(本発明に好ましく使用されるポ
リマー)の具体例を以下に例示する。この具体例によっ
て、本発明はもちろん限定されるものではない。下記に
示される化学構造式中において、ポリマー主鎖部分の括
弧右下の数字はモル分率(%)を意味し、明記されてい
ないものについては、100%すなわち1を意味する。Further, specific examples of polymer compounds (polymers preferably used in the present invention) formed by the polymerization reaction of the above monomers are shown below. The present invention is of course not limited by this specific example. In the chemical structural formulas shown below, the number at the lower right of the parenthesis of the polymer main chain part means a mole fraction (%), and unless otherwise specified, it means 100%, that is, 1.
【0040】[0040]
【化6】 Embedded image
【0041】[0041]
【化7】 Embedded image
【0042】[0042]
【化8】 Embedded image
【0043】[0043]
【化9】 Embedded image
【0044】(ポリマーの具体的合成方法)(Specific Method for Synthesizing Polymer)
【0045】[0045]
【化10】 Embedded image
【0046】(ポリマーP-1の合成)温度計、ガス導入
管とリフラックスコンデンサーを取り付けた500mlの三
つ口フラスコに、モノマーA−1 10g、トルエン200ml
を仕込み、窒素気流を通じた。磁気撹拌子を用いて内容
物を撹拌しながら、内温を70℃にコントロールした。こ
こに開始剤としてアゾビスイソブチロニトリル(AIBN)
を0.1gずつ、1時間おきに5回添加した。添加終了後さ
らに3時間重合反応を続けると、TLCプレートのチェッ
クでモノマーはすべて消失しているのが確認された。こ
のポリマー溶液を濾過後、3リットルのメタノール中に
投入してポリマーの沈殿精製を行い、析出したポリマー
を濾別、乾燥した。このようにして、ポリマーP-1をフ
レーク状の固体として、9.9g得た。(Synthesis of Polymer P-1) In a 500 ml three-necked flask equipped with a thermometer, a gas inlet tube and a reflux condenser, 10 g of monomer A-1 and 200 ml of toluene were placed.
And passed through a stream of nitrogen. While stirring the contents using a magnetic stirrer, the internal temperature was controlled at 70 ° C. Here azobisisobutyronitrile (AIBN) as initiator
Was added 5 times every 1 hour in 0.1 g portions. When the polymerization reaction was continued for another 3 hours after the addition, the TLC plate was checked to confirm that all the monomers had disappeared. After filtering the polymer solution, the polymer solution was poured into 3 liters of methanol to precipitate and purify the polymer, and the precipitated polymer was separated by filtration and dried. In this way, 9.9 g of polymer P-1 was obtained as a flake-like solid.
【0047】本発明に使用することができるポリマー
は、重合法として、ラジカル重合、イオン重合、縮重
合、開環重合などの重合方法によってポリマーに誘導可
能である。中でもラジカル重合やイオン重合のような、
ビニル重合により得られたポリマーが好ましく使用され
る。これら重合法については、「高分子合成の実験法」
大津・木下共著 化学同人刊(1972)に詳細が記載されて
いる。合成により生成するポリマーの質量平均分子量(M
w)としては、1000〜10000000、好ましくは2000〜100000
0、特に好ましくは5000〜500000である。また、本発明
のポリマーは、もちろん他の有機素材や無機素材と併用
して有機発光素子材料として使用可能である。併用する
有機素材としては低分子有機素材でもポリマーでもよ
い。The polymer that can be used in the present invention can be derived into a polymer by a polymerization method such as radical polymerization, ionic polymerization, polycondensation, or ring-opening polymerization. Among them, such as radical polymerization and ionic polymerization,
Polymers obtained by vinyl polymerization are preferably used. These polymerization methods are described in "Experimental Methods for Polymer Synthesis".
Details are described in Otsu-Kinoshita co-authored by Kagaku Dojin (1972). Weight average molecular weight (M
w) is 1000 to 10000000, preferably 2000 to 100000
0, particularly preferably 5,000 to 500,000. Further, the polymer of the present invention can be used as an organic light emitting device material in combination with other organic materials and inorganic materials. The organic material used in combination may be a low molecular organic material or a polymer.
【0048】本発明のモノマーから合成されるポリマー
は有機発光素子材料として、正孔注入材料、正孔輸送材
料、発光材料、電子輸送材料、電子注入材料いずれとし
ても使用可能である。The polymer synthesized from the monomer of the present invention can be used as an organic light emitting device material as any of a hole injecting material, a hole transporting material, a light emitting material, an electron transporting material, and an electron injecting material.
【0049】本発明で使用するポリマーは、単独で使用
しても、他のポリマーと混合して使用してもよい。さら
には、低分子化合物と混合して使用することも可能であ
る。The polymer used in the present invention may be used alone or as a mixture with another polymer. Furthermore, it is also possible to use a mixture with a low molecular weight compound.
【0050】本発明では、陽極、陰極間に2層以上の発
光素子材料が薄膜として塗設された、発光素子の製造方
法を与えるものである。その中でも、特に発光素子材料
として有機物を用いた有機発光素子の製造方法に関す
る。本発明の方法では、少なくとも2層以上の素子材料
を塗設後、それに物理または化学的後処理を施すことに
より、塗設された薄膜の素子材料を変性させ、発光素子
材料としての機能を向上させるものである。The present invention provides a method for manufacturing a light emitting device in which two or more light emitting device materials are applied as a thin film between an anode and a cathode. In particular, the present invention relates to a method for manufacturing an organic light emitting device using an organic material as a light emitting device material. According to the method of the present invention, after applying at least two or more layers of element material, the element material of the applied thin film is modified by applying physical or chemical post-treatment to improve the function as a light emitting element material. It is to let.
【0051】塗設される発光素子材料としては、正孔注
入材料、正孔輸送性材料、正孔ブロッキング材料、電子
注入材料、電子輸送材料、電子ブロッキング材料、発光
材料等、発光素子材料として使用する材料であればいず
れのものでもよい。本発明では、上記種々の発光素子材
料として有機化合物を好ましく使用する。As the light emitting device material to be coated, a hole injecting material, a hole transporting material, a hole blocking material, an electron injecting material, an electron transporting material, an electron blocking material, a light emitting material, and the like are used. Any material may be used as long as the material is suitable. In the present invention, organic compounds are preferably used as the above various light emitting element materials.
【0052】本発明のポリマーを有機発光素子材料とし
て使用する場合、有機発光素子としては発光材料が一重
項励起子から発光するもの、三重項励起子から発光する
もの(りん光発光性化合物)、両者から発光するもの、
いずれの発光材料においても使用可能であるが、特に三
重項励起子からの発光が含まれる発光材料との組み合わ
せが、発光効率という観点から好ましく用いられる。When the polymer of the present invention is used as an organic light emitting device material, the organic light emitting device emits light from a singlet exciton, emits light from a triplet exciton (phosphorescent compound), One that emits light from both,
Although any of the light emitting materials can be used, a combination with a light emitting material containing light emission from a triplet exciton is particularly preferably used from the viewpoint of light emission efficiency.
【0053】本発明で用いられる発光材料は、りん光発
光性化合物であるオルトメタル化金属錯体およびポルフ
ィリン金属錯体の少なくとも一つが好ましく用いられ、
オルトメタル化金属錯体がより好ましく用いられる。As the luminescent material used in the present invention, at least one of an orthometalated metal complex and a porphyrin metal complex which are phosphorescent compounds is preferably used.
Orthometallated metal complexes are more preferably used.
【0054】本発明で用いられるオルトメタル化金属錯
体について説明する。オルトメタル化金属錯体とは、例
えば「有機金属化学−基礎と応用−」p150,232
裳華房社 山本明夫著 1982年発行、「Photochemis
try and Photophysics of Coordination Compounds」 p
71-p77,p135-p146 Springer-Verlag社 H.Yersin著19
87年発行等に記載されている化合物群の総称である。
前記金属錯体の中心金属としては、遷移金属であればい
ずれも使用可能であるが、本発明では、中でもロジウ
ム、白金、金、イリジウム、ルテニウム、パラジウム等
を好ましく用いることができる。この中でより好ましい
ものはイリジウムである。前記オルトメタル化金属錯体
の具体的な記載および化合物例は、特願2000-254171号
公報の段落番号0152から0180までに記載されて
いる。The orthometalated metal complex used in the present invention will be described. The ortho-metalated metal complex is described in, for example, "Organic Metal Chemistry-Fundamentals and Applications-", p.
Shokabosha, written by Akio Yamamoto 1982, Photochemis
try and Photophysics of Coordination Compounds '' p
71-p77, p135-p146 Springer-Verlag H. Yersin 19
It is a general term for a group of compounds described in 1987 and the like.
As the central metal of the metal complex, any transition metal can be used. In the present invention, among them, rhodium, platinum, gold, iridium, ruthenium, palladium and the like can be preferably used. Of these, iridium is more preferred. The specific description and the compound examples of the ortho-metalated metal complex are described in Japanese Patent Application No. 2000-254171, paragraphs 0152 to 0180.
【0055】オルトメタル化金属錯体の金属の価数は特
に限定しないが、イリジウムを用いる場合には3価が好
ましい。オルトメタル化金属錯体の配位子は、オルトメ
タル化金属錯体を形成しうるものであれば特に問わな
い。例えば、アリール基置換含窒素芳香族へテロ環誘導
体(アリール基の置換位置は含窒素芳香族へテロ環窒素
原子の隣接炭素上であり、アリール基としては例えばフ
ェニル基、ナフチル基、アントラセニル基、ピレニル基
などが挙げられ、含窒素芳香族へテロ環としては、例え
ば、ピリジン、ピリミジン、ピラジン、ピリダジン、キ
ノリン、イソキノリン、キノキサリン、フタラジン、キ
ナゾリン、ナフチリジン、シンノリン、ペリミジン、フ
ェナントロリン、ピロール、イミダゾール、ピラゾー
ル、オキサゾール、オキサジアゾール、トリアゾール、
チアジアゾール、ベンズイミダゾール、ベンズオキサゾ
ール、ベンズチアゾール、フェナントリジンなどが挙げ
られる)、The valence of the metal of the orthometalated metal complex is not particularly limited, but is preferably trivalent when iridium is used. The ligand of the orthometalated metal complex is not particularly limited as long as it can form an orthometallated metal complex. For example, an aryl group-substituted nitrogen-containing aromatic hetero ring derivative (the substitution position of an aryl group is on a carbon adjacent to a nitrogen-containing aromatic hetero ring nitrogen atom, and examples of the aryl group include a phenyl group, a naphthyl group, an anthracenyl group, Examples of the nitrogen-containing aromatic heterocycle include pyridine, pyrimidine, pyrazine, pyridazine, quinoline, isoquinoline, quinoxaline, phthalazine, quinazoline, naphthyridine, cinnoline, perimidine, phenanthroline, pyrrole, imidazole, and pyrazole. , Oxazole, oxadiazole, triazole,
Thiadiazole, benzimidazole, benzoxazole, benzothiazole, phenanthridine and the like),
【0056】ヘテロアリール基置換含窒素芳香族へテロ
環誘導体(ヘテロアリール基の置換位置は含窒素芳香族
へテロ環窒素原子の隣接炭素上であり、ヘテロアリール
基としては例えば前記の含窒素芳香族へテロ環誘導体を
含有する基、チオフェニル基、フリル基などが挙げられ
る)、7,8−ベンゾキノリン誘導体、ホスフィノアリ
ール誘導体、ホスフィノヘテロアリール誘導体、ホスフ
ィノキシアリール誘導体、ホスフィノキシヘテロアリー
ル誘導体、アミノメチルアリール誘導体、アミノメチル
ヘテロアリール誘導体等が挙げられる。このうちアリー
ル基置換含窒素芳香族ヘテロ環誘導体、ヘテロアリール
基置換含窒素芳香族ヘテロ環誘導体、7,8−ベンゾキ
ノリン誘導体が好ましく、フェニルピリジン誘導体、チ
オフェニルピリジン誘導体、7,8−ベンゾキノリン誘
導体がより好ましく、チオフェニルピリジン誘導体、
7,8−ベンゾキノリン誘導体が更に好ましい。Heteroaryl group-substituted nitrogen-containing aromatic heterocyclic derivative (the substitution position of the heteroaryl group is on the carbon adjacent to the nitrogen-containing aromatic heterocycle nitrogen atom. Group, thiophenyl group, furyl group, etc.), 7,8-benzoquinoline derivative, phosphinoaryl derivative, phosphinoheteroaryl derivative, phosphinoxyaryl derivative, phosphinoxyhetero An aryl derivative, an aminomethylaryl derivative, an aminomethylheteroaryl derivative and the like can be mentioned. Of these, aryl-substituted nitrogen-containing aromatic heterocyclic derivatives, heteroaryl-substituted nitrogen-containing aromatic heterocyclic derivatives, and 7,8-benzoquinoline derivatives are preferable, and phenylpyridine derivatives, thiophenylpyridine derivatives, and 7,8-benzoquinoline Derivatives are more preferred, thiophenylpyridine derivatives,
7,8-Benzoquinoline derivatives are more preferred.
【0057】本発明に用いるポルフィリン金属錯体とし
て好ましくは白金錯体であり、より好ましくは二価の白
金錯体である。The porphyrin metal complex used in the present invention is preferably a platinum complex, more preferably a divalent platinum complex.
【0058】三重項励起子からの発光が観測される有機
発光素子としては、イリジウム錯体(Ir(ppy)3:Tris-Or
tho-Metalated Complex of Iridium(III) with 2-Pheny
lpyridine)からの発光を利用した緑色発光素子が報告さ
れている(Applied PhysicsLetters 75,4(1999))。
本素子は外部量子収率8%を達しており、従来素子の限
界といわれていた外部量子収率5%を凌駕したことが報
告されている。As an organic light emitting device in which light emission from a triplet exciton is observed, an iridium complex (Ir (ppy) 3 : Tris-Or
tho-Metalated Complex of Iridium (III) with 2-Pheny
A green light-emitting device utilizing light emission from lpyridine) has been reported (Applied Physics Letters 75, 4 (1999)).
It has been reported that this device achieved an external quantum yield of 8%, surpassing the external quantum yield of 5%, which was said to be the limit of the conventional device.
【0059】次に、本発明の化合物を含有する発光素子
に関して説明する。本発明の化合物を含有する発光素子
の有機層の形成方法は、特に限定されるものではない
が、抵抗加熱蒸着、電子ビーム、スパッタリング、分子
積層法、コーティング法、インクジェット法などの方法
が用いられ、特性面、製造面で抵抗加熱蒸着、コーティ
ング法が好ましい。Next, a light emitting device containing the compound of the present invention will be described. The method for forming the organic layer of the light-emitting element containing the compound of the present invention is not particularly limited, and a method such as resistance heating evaporation, electron beam, sputtering, molecular lamination, coating, or an inkjet method is used. From the viewpoint of characteristics and production, resistance heating evaporation and coating are preferred.
【0060】本発明の発光素子は陽極、陰極の一対の電
極間に発光層もしくは発光層を含む複数の有機化合物薄
膜(有機化合物層)を形成した素子であり、発光層のほ
か正孔注入層、正孔輸送層、電子注入層、電子輸送層、
保護層などを有してもよく、またこれらの各層はそれぞ
れ他の機能を備えたものであってもよい。各層の形成に
はそれぞれ種々の材料を用いることができる。The light emitting device of the present invention is a device in which a light emitting layer or a plurality of organic compound thin films (organic compound layers) including the light emitting layer are formed between a pair of anode and cathode electrodes. , Hole transport layer, electron injection layer, electron transport layer,
It may have a protective layer or the like, and each of these layers may have another function. Various materials can be used for forming each layer.
【0061】本発明の発光素子は、一般式(1)で表さ
れるポリマーを、少なくとも1種以上の該ポリマーを塗
設して成る。高輝度発光および高発光効率、耐久性に優
れる発光素子を提供するには、発光素子の有機化合物層
において、 該ポリマーを0.01〜100質量%含有
するのが好ましく、より好ましくは1〜100質量%含
有する。The light emitting device of the present invention comprises a polymer represented by the general formula (1) and at least one kind of the polymer. In order to provide a light-emitting device having high luminance emission, high luminous efficiency, and excellent durability, the organic compound layer of the light-emitting device preferably contains the polymer in an amount of 0.01 to 100% by mass, more preferably 1 to 100% by mass. % By mass.
【0062】陽極は、正孔注入層、正孔輸送層、発光層
などに正孔を供給するものであり、金属、合金、金属酸
化物、電気伝導性化合物、またはこれらの混合物などを
用いることができ、好ましくは仕事関数が4eV以上の
材料である。具体例としては酸化スズ、酸化亜鉛、酸化
インジウム、酸化インジウムスズ(ITO)等の導電性
金属酸化物、あるいは金、銀、クロム、ニッケル等の金
属、さらにこれらの金属と導電性金属酸化物との混合物
または積層物、ヨウ化銅、硫化銅などの無機導電性物
質、ポリアニリン、ポリチオフェン、ポリピロールなど
の有機導電性材料、およびこれらとITOとの積層物な
どが挙げられ、好ましくは、導電性金属酸化物であり、
特に、生産性、高導電性、透明性等の点からITOが好
ましい。陽極の膜厚は材料により適宜選択可能である
が、通常10nm〜5μmの範囲のものが好ましく、よ
り好ましくは50nm〜1μmであり、更に好ましくは
100nm〜500nmである。The anode supplies holes to the hole injection layer, the hole transport layer, the light emitting layer, and the like. A metal, an alloy, a metal oxide, an electrically conductive compound, or a mixture thereof is used. And is preferably a material having a work function of 4 eV or more. Specific examples include conductive metal oxides such as tin oxide, zinc oxide, indium oxide, and indium tin oxide (ITO), or metals such as gold, silver, chromium, and nickel, and those metals and conductive metal oxides. Mixtures or laminates, inorganic conductive substances such as copper iodide and copper sulfide, organic conductive materials such as polyaniline, polythiophene, and polypyrrole, and laminates of these with ITO, and the like. Oxides,
In particular, ITO is preferable in terms of productivity, high conductivity, transparency, and the like. The thickness of the anode can be appropriately selected depending on the material, but is usually preferably in the range of 10 nm to 5 μm, more preferably 50 nm to 1 μm, and still more preferably 100 nm to 500 nm.
【0063】陽極は通常、ソーダライムガラス、無アル
カリガラス、透明樹脂基板などの上に層形成したものが
用いられる。ガラスを用いる場合、その材質について
は、ガラスからの溶出イオンを少なくするため、無アル
カリガラスを用いることが好ましい。また、ソーダライ
ムガラスを用いる場合、シリカなどのバリアコートを施
したものを使用することが好ましい。基板の厚みは、機
械的強度を保つのに十分であれば特に制限はないが、ガ
ラスを用いる場合には、通常0.2mm以上、好ましく
は0.7mm以上のものを用いる。As the anode, a layer formed on a soda lime glass, an alkali-free glass, a transparent resin substrate or the like is usually used. When glass is used, it is preferable to use non-alkali glass in order to reduce ions eluted from the glass. Further, when soda lime glass is used, it is preferable to use a glass coated with a barrier coat such as silica. The thickness of the substrate is not particularly limited as long as it is sufficient to maintain the mechanical strength. When glass is used, the thickness is usually 0.2 mm or more, preferably 0.7 mm or more.
【0064】陽極の作製には材料によって種々の方法が
用いられるが、例えばITOの場合、電子ビーム法、ス
パッタリング法、抵抗加熱蒸着法、化学反応法(ゾル−
ゲル法など)、酸化インジウムスズの分散物の塗布など
の方法で膜形成される。陽極は洗浄その他の処理によ
り、素子の駆動電圧を下げたり、発光効率を高めること
も可能である。例えばITOの場合、UV−オゾン処
理、プラズマ処理などが効果的である。Various methods are used for producing an anode depending on the material. For example, in the case of ITO, an electron beam method, a sputtering method, a resistance heating evaporation method, a chemical reaction method (sol-
The film is formed by a method such as a gel method) or coating a dispersion of indium tin oxide. The anode can be washed or otherwise treated to lower the driving voltage of the device or increase the luminous efficiency. For example, in the case of ITO, UV-ozone treatment, plasma treatment and the like are effective.
【0065】陰極は電子注入層、電子輸送層、発光層な
どに電子を供給するものであり、電子注入層、電子輸送
層、発光層などの負極と隣接する層との密着性やイオン
化ポテンシャル、安定性等を考慮して選ばれる。陰極の
材料としては金属、合金、金属ハロゲン化物、金属酸化
物、電気伝導性化合物、またはこれらの混合物を用いる
ことができ、具体例としてはアルカリ金属(例えばL
i、Na、K、Cs等)及びそのフッ化物、アルカリ土
類金属(例えばMg、Ca等)及びそのフッ化物、金、
銀、鉛、アルニウム、ナトリウム−カリウム合金または
それらの混合金属、リチウム−アルミニウム合金または
それらの混合金属、マグネシウム−銀合金またはそれら
の混合金属、インジウム、イッテリビウム等の希土類金
属等が挙げられ、好ましくは仕事関数が4eV以下の材
料であり、より好ましくはアルミニウム、リチウム−ア
ルミニウム合金またはそれらの混合金属、マグネシウム
−銀合金またはそれらの混合金属等である。The cathode supplies electrons to the electron injecting layer, the electron transporting layer, the light emitting layer and the like. The cathode has good adhesion and ionization potential between the negative electrode and the adjacent layer such as the electron injecting layer, the electron transporting layer and the light emitting layer. It is selected in consideration of stability and the like. As a material for the cathode, a metal, an alloy, a metal halide, a metal oxide, an electrically conductive compound, or a mixture thereof can be used. Specific examples thereof include an alkali metal (for example, L
i, Na, K, Cs, etc.) and their fluorides, alkaline earth metals (eg, Mg, Ca, etc.) and their fluorides, gold,
Silver, lead, alnium, sodium-potassium alloy or mixed metal thereof, lithium-aluminum alloy or mixed metal thereof, magnesium-silver alloy or mixed metal thereof, indium, rare earth metal such as ytterbium, and the like, preferably A material having a work function of 4 eV or less, more preferably aluminum, a lithium-aluminum alloy or a mixed metal thereof, a magnesium-silver alloy or a mixed metal thereof, or the like.
【0066】陰極は、上記化合物及び混合物の単層構造
だけでなく、上記化合物及び混合物を含む積層構造を取
ることもできる。陰極の膜厚は材料により適宜選択可能
であるが、通常10nm〜5μmの範囲のものが好まし
く、より好ましくは50nm〜1μmであり、更に好ま
しくは100nm〜1μmである。The cathode may have not only a single-layer structure of the above compound and mixture, but also a laminated structure containing the above compound and mixture. The thickness of the cathode can be appropriately selected depending on the material, but is usually preferably in the range of 10 nm to 5 μm, more preferably 50 nm to 1 μm, and still more preferably 100 nm to 1 μm.
【0067】陰極の作製には電子ビーム法、スパッタリ
ング法、抵抗加熱蒸着法、コーティング法などの方法が
用いられ、金属を単体で蒸着することも、二成分以上を
同時に蒸着することもできる。さらに、複数の金属を同
時に蒸着して合金電極を形成することも可能であり、ま
たあらかじめ調整した合金を蒸着させてもよい。陽極及
び陰極のシート抵抗は低い方が好ましく、数百Ω/□以
下が好ましい。The cathode is manufactured by a method such as an electron beam method, a sputtering method, a resistance heating evaporation method, and a coating method. The metal can be evaporated alone or two or more components can be evaporated simultaneously. Further, an alloy electrode can be formed by depositing a plurality of metals at the same time, or an alloy prepared in advance may be deposited. The sheet resistance of the anode and the cathode is preferably low, and is preferably several hundred Ω / □ or less.
【0068】発光層の材料は、電界印加時に陽極または
正孔注入層、正孔輸送層から正孔を注入することができ
ると共に陰極または電子注入層、電子輸送層から電子を
注入することができる機能や、注入された電荷を移動さ
せる機能、正孔と電子の再結合の場を提供して発光させ
る機能を有する層を形成することができるものであれば
何でもよい。好ましくは発光層に本発明のアミン化合物
を含有するものであるが、他の発光材料を用いることも
できる。例えばベンゾオキサゾール誘導体、ベンゾイミ
ダゾール誘導体、ベンゾチアゾール誘導体、スチリルベ
ンゼン誘導体、ポリフェニル誘導体、ジフェニルブタジ
エン誘導体、テトラフェニルブタジエン誘導体、ナフタ
ルイミド誘導体、クマリン誘導体、ペリレン誘導体、ペ
リノン誘導体、オキサジアゾール誘導体、アルダジン誘
導体、ピラリジン誘導体、シクロペンタジエン誘導体、
ビススチリルアントラセン誘導体、キナクリドン誘導
体、ピロロピリジン誘導体、チアジアゾロピリジン誘導
体、シクロペンタジエン誘導体、スチリルアミン誘導
体、芳香族ジメチリディン化合物、8−キノリノール誘
導体の金属錯体や希土類錯体に代表される各種金属錯体
等、ポリチオフェン、ポリフェニレン、ポリフェニレン
ビニレン等のポリマー化合物等が挙げられる。発光層の
膜厚は特に限定されるものではないが、通常1nm〜5
μmの範囲のものが好ましく、より好ましくは5nm〜
1μmであり、更に好ましくは10nm〜500nmで
ある。The material of the light emitting layer is capable of injecting holes from an anode, a hole injection layer, or a hole transport layer and applying electrons from a cathode, an electron injection layer, or an electron transport layer when an electric field is applied. Any material can be used as long as it can form a layer having a function, a function of transferring injected charges, and a function of providing a field of recombination of holes and electrons to emit light. Preferably, the light emitting layer contains the amine compound of the present invention, but other light emitting materials can also be used. For example, benzoxazole derivatives, benzimidazole derivatives, benzothiazole derivatives, styrylbenzene derivatives, polyphenyl derivatives, diphenylbutadiene derivatives, tetraphenylbutadiene derivatives, naphthalimide derivatives, coumarin derivatives, perylene derivatives, perinone derivatives, oxadiazole derivatives, aldazine derivatives , Pyrazine derivative, cyclopentadiene derivative,
Bisstyrylanthracene derivatives, quinacridone derivatives, pyrrolopyridine derivatives, thiadiazolopyridine derivatives, cyclopentadiene derivatives, styrylamine derivatives, aromatic dimethylidin compounds, various metal complexes represented by 8-quinolinol derivative metal complexes and rare earth complexes, Polymer compounds such as polythiophene, polyphenylene, and polyphenylenevinylene are exemplified. Although the thickness of the light emitting layer is not particularly limited, it is usually 1 nm to 5 nm.
It is preferably in the range of μm, more preferably 5 nm to
It is 1 μm, and more preferably 10 nm to 500 nm.
【0069】発光層の形成方法は、特に限定されるもの
ではないが、抵抗加熱蒸着、電子ビーム、スパッタリン
グ、分子積層法、コーティング法(スピンコート法、キ
ャスト法、ディップコート法など)、LB法、インクジ
ェット法などの方法が用いられ、好ましくは抵抗加熱蒸
着、コーティング法である。The method for forming the light emitting layer is not particularly limited, but includes resistance heating evaporation, electron beam, sputtering, molecular lamination, coating (spin coating, casting, dip coating, etc.), and LB method. And a method such as an ink-jet method, and preferably a resistance heating evaporation and a coating method.
【0070】正孔注入層、正孔輸送層の材料は、陽極か
ら正孔を注入する機能、正孔を輸送する機能、陰極から
注入された電子を障壁する機能のいずれか有しているも
のであればよい。その具体例としては、カルバゾール誘
導体、トリアゾール誘導体、オキサゾール誘導体、オキ
サジアゾール誘導体、イミダゾール誘導体、ポリアリー
ルアルカン誘導体、ピラゾリン誘導体、ピラゾロン誘導
体、フェニレンジアミン誘導体、アリールアミン誘導
体、アミノ置換カルコン誘導体、スチリルアントラセン
誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチ
ルベン誘導体、シラザン誘導体、芳香族第三級アミン化
合物、スチリルアミン化合物、芳香族ジメチリディン系
化合物、ポルフィリン系化合物、ポリシラン系化合物、
ポリ(N−ビニルカルバゾール)誘導体、アニリン系共
重合体、チオフェンオリゴマー、ポリチオフェン等の導
電性高分子オリゴマー等が挙げられる。正孔注入層、正
孔輸送層の膜厚は特に限定されるものではないが、通常
1nm〜5μmの範囲のものが好ましく、より好ましく
は5nm〜1μmであり、更に好ましくは10nm〜5
00nmである。正孔注入層、正孔輸送層は上述した材
料の1種または2種以上からなる単層構造であってもよ
いし、同一組成または異種組成の複数層からなる多層構
造であってもよい。The material of the hole injection layer and the hole transport layer has one of a function of injecting holes from the anode, a function of transporting holes, and a function of blocking electrons injected from the cathode. Should be fine. Specific examples thereof include carbazole derivatives, triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, and styryl anthracene derivatives , Fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidin compounds, porphyrin compounds, polysilane compounds,
Examples thereof include poly (N-vinylcarbazole) derivatives, aniline-based copolymers, thiophene oligomers, and conductive polymer oligomers such as polythiophene. The thicknesses of the hole injection layer and the hole transport layer are not particularly limited, but are usually preferably in the range of 1 nm to 5 μm, more preferably 5 nm to 1 μm, and still more preferably 10 nm to 5 μm.
00 nm. The hole injection layer and the hole transport layer may have a single-layer structure composed of one or more of the above-described materials, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions.
【0071】正孔注入層、正孔輸送層の形成方法として
は、真空蒸着法やLB法やインクジェット法、前記正孔
注入輸送剤を溶媒に溶解または分散させてコーティング
する方法(スピンコート法、キャスト法、ディップコー
ト法など)が用いられる。コーティング法の場合、樹脂
成分と共に溶解または分散することができ、樹脂成分と
しては例えば、ポリ塩化ビニル、ポリカーボネート、ポ
リスチレン、ポリメチルメタクリレート、ポリブチルメ
タクリレート、ポリエステル、ポリスルホン、ポリフェ
ニレンオキシド、ポリブタジエン、ポリ(N−ビニルカ
ルバゾール)、炭化水素樹脂、ケトン樹脂、フェノキシ
樹脂、ポリアミド、エチルセルロース、酢酸ビニル、A
BS樹脂、ポリウレタン、メラミン樹脂、不飽和ポリエ
ステル樹脂、アルキド樹脂、エポキシ樹脂、シリコン樹
脂などが挙げられる。The hole injecting layer and the hole transporting layer may be formed by a vacuum deposition method, an LB method, an inkjet method, or a method of dissolving or dispersing the hole injecting / transporting agent in a solvent and coating (spin coating method, Casting method, dip coating method, etc.). In the case of the coating method, it can be dissolved or dispersed together with the resin component. Examples of the resin component include polyvinyl chloride, polycarbonate, polystyrene, polymethyl methacrylate, polybutyl methacrylate, polyester, polysulfone, polyphenylene oxide, polybutadiene, and poly (N -Vinyl carbazole), hydrocarbon resin, ketone resin, phenoxy resin, polyamide, ethyl cellulose, vinyl acetate, A
Examples include BS resin, polyurethane, melamine resin, unsaturated polyester resin, alkyd resin, epoxy resin, and silicone resin.
【0072】電子注入層、電子輸送層の材料は、陰極か
ら電子を注入する機能、電子を輸送する機能、陽極から
注入された正孔を障壁する機能のいずれか有しているも
のであればよい。その具体例としては、トリアゾール誘
導体、オキサゾール誘導体、オキサジアゾール誘導体、
フルオレノン誘導体、アントラキノジメタン誘導体、ア
ントロン誘導体、ジフェニルキノン誘導体、チオピラン
ジオキシド誘導体、カルビジイミド誘導体、フルオレニ
リデンメタン誘導体、ジスチリルピラジン誘導体、ナフ
タレンペリレン等の複素環テトラカルボン酸無水物、フ
タロシアニン誘導体、8−キノリノール誘導体の金属錯
体やメタルフタロシアニン、ベンゾオキサゾールやベン
ゾチアゾールを配位子とする金属錯体に代表される各種
金属錯体等が挙げられる。電子注入層、電子輸送層の膜
厚は特に限定されるものではないが、通常1nm〜5μ
mの範囲のものが好ましく、より好ましくは5nm〜1
μmであり、更に好ましくは10nm〜500nmであ
る。電子注入層、電子輸送層は上述した材料の1種また
は2種以上からなる単層構造であってもよいし、同一組
成または異種組成の複数層からなる多層構造であっても
よい。The material of the electron injecting layer and the electron transporting layer is not limited as long as it has a function of injecting electrons from the cathode, a function of transporting electrons, or a function of blocking holes injected from the anode. Good. Specific examples thereof include triazole derivatives, oxazole derivatives, oxadiazole derivatives,
Heterocyclic tetracarboxylic anhydrides such as fluorenone derivatives, anthraquinodimethane derivatives, anthrone derivatives, diphenylquinone derivatives, thiopyrandioxide derivatives, carbidiimide derivatives, fluorenylidenemethane derivatives, distyrylpyrazine derivatives, naphthalene perylene, and phthalocyanines And various metal complexes represented by metal complexes of derivatives, 8-quinolinol derivatives, metal phthalocyanines, and metal complexes having benzoxazole or benzothiazole as ligands. The thickness of the electron injection layer and the electron transport layer is not particularly limited, but is usually 1 nm to 5 μm.
m, more preferably 5 nm to 1
μm, and more preferably 10 nm to 500 nm. The electron injection layer and the electron transport layer may have a single layer structure composed of one or more of the above-mentioned materials, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions.
【0073】電子注入層、電子輸送層の形成方法として
は、真空蒸着法やLB法やインクジェット法、前記電子
注入輸送剤を溶媒に溶解または分散させてコーティング
する方法(スピンコート法、キャスト法、ディップコー
ト法など)などが用いられる。コーティング法の場合、
樹脂成分と共に溶解または分散することができ、樹脂成
分としては例えば、正孔注入輸送層の場合に例示したも
のが適用できる。The electron injecting layer and the electron transporting layer can be formed by a vacuum deposition method, an LB method, an ink-jet method, or a method of coating by dissolving or dispersing the electron injecting / transporting agent in a solvent (spin coating, casting, A dip coating method or the like is used. In the case of the coating method,
It can be dissolved or dispersed together with the resin component. As the resin component, for example, those exemplified for the hole injection / transport layer can be applied.
【0074】保護層の材料としては水分や酸素等の素子
劣化を促進するものが素子内に入ることを抑止する機能
を有しているものであればよい。その具体例としては、
In、Sn、Pb、Au、Cu、Ag、Al、Ti、N
i等の金属、MgO、SiO、SiO2 、Al2O3、G
eO、NiO、CaO、BaO、Fe2O3、Y2O3、T
iO2等の金属酸化物、MgF2、LiF、AlF3、C
aF2等の金属フッ化物、ポリエチレン、ポリプロピレ
ン、ポリメチルメタクリレート、ポリイミド、ポリウレ
ア、ポリテトラフルオロエチレン、ポリクロロトリフル
オロエチレン、ポリジクロロジフルオロエチレン、クロ
ロトリフルオロエチレンとジクロロジフルオロエチレン
との共重合体、テトラフルオロエチレンと少なくとも1
種のコモノマーとを含むモノマー混合物を共重合させて
得られる共重合体、共重合主鎖に環状構造を有する含フ
ッ素共重合体、吸水率1%以上の吸水性物質、吸水率
0.1%以下の防湿性物質等が挙げられる。As the material of the protective layer, any material may be used as long as it has a function of preventing a substance that promotes element deterioration such as moisture or oxygen from entering the element. As a specific example,
In, Sn, Pb, Au, Cu, Ag, Al, Ti, N
metal such as i, MgO, SiO, SiO 2 , Al 2 O 3 , G
eO, NiO, CaO, BaO, Fe 2 O 3, Y 2 O 3, T
metal oxides such as iO 2 , MgF 2 , LiF, AlF 3 , C
aF 2 metal fluorides such as, polyethylene, polypropylene, polymethyl methacrylate, polyimide, polyurea, polytetrafluoroethylene, polychlorotrifluoroethylene, poly-dichloro-difluoroethylene, a copolymer of chlorotrifluoroethylene and dichlorodifluoroethylene, At least one with tetrafluoroethylene
A copolymer obtained by copolymerizing a monomer mixture containing a kind of comonomer, a fluorinated copolymer having a cyclic structure in the copolymer main chain, a water-absorbing substance having a water absorption of 1% or more, a water absorption of 0.1% The following moisture-proof substances are listed.
【0075】保護層の形成方法についても特に限定はな
く、例えば真空蒸着法、スパッタリング法、反応性スパ
ッタリング法、MBE(分子線エピタキシ)法、クラス
ターイオンビーム法、イオンプレーティング法、プラズ
マ重合法(高周波励起イオンプレーティング法)、プラ
ズマCVD法、レーザーCVD法、熱CVD法、ガスソ
ースCVD法、コーティング法、インクジェット法を適
用できる。The method for forming the protective layer is not particularly limited. For example, a vacuum deposition method, a sputtering method, a reactive sputtering method, an MBE (molecular beam epitaxy) method, a cluster ion beam method, an ion plating method, a plasma polymerization method ( High-frequency excitation ion plating method), plasma CVD method, laser CVD method, thermal CVD method, gas source CVD method, coating method, and inkjet method can be applied.
【0076】[0076]
【実施例】以下に本発明の実施例について説明するが、
本発明はこれらにより限定されるものでない。 実施例1 25mm×25mm×0.7mmのガラス基板上にITOを150nmの厚さ
で製膜したもの(東京三容真空(株)製)を透明支持基
板とした。この透明支持基板をエッチング、洗浄した。
この基板にポリ〔(3,4-エチレンジオキシ)-2,5-チオ
フェン〕・ポリスチレンスルホン酸分散物(Bayer社
製:Baytron P 固形分1.3%)をスピンコートした後、
150℃2時間真空乾燥して膜厚100nmの塗布層を形成し
た。この上に発光層としてポリ(N-ビニルカルバゾール
(PVK))40mg、PBD(2-(4'-t-ブチルフェニル)-5-(4''-
(フェニル)フェニル)-1,3,4-オキサジアゾール) 12mg、
発光材料としてクマリン-6 1mgを1,2-ジクロロエタン2m
lに溶解した溶液をスピンコートした。この塗布膜の膜
厚は約120nmであった。有機薄膜上にパターニングした
マスク(発光面積が5mm×5mmとなるマスク)を設置し、
蒸着装置内でマグネシウム:銀=10:1を250nm共蒸着し
た後、銀300nmを蒸着し、素子101を作製した。EXAMPLES Examples of the present invention will be described below.
The present invention is not limited by these. Example 1 A transparent support substrate was made of ITO having a thickness of 150 nm formed on a 25 mm × 25 mm × 0.7 mm glass substrate (manufactured by Tokyo Sanyo Vacuum Co., Ltd.). This transparent support substrate was etched and washed.
After spin-coating a poly [(3,4-ethylenedioxy) -2,5-thiophene] polystyrenesulfonic acid dispersion (Bayer: Baytron P solid content 1.3%) on this substrate,
Vacuum drying was performed at 150 ° C. for 2 hours to form a coating layer having a thickness of 100 nm. On top of this, a poly (N-vinyl carbazole)
(PVK)) 40mg, PBD (2- (4'-t-butylphenyl) -5- (4 ''-
(Phenyl) phenyl) -1,3,4-oxadiazole) 12 mg,
Coumarin-6 1mg as light emitting material, 1,2-dichloroethane 2m
The solution dissolved in l was spin-coated. The thickness of this coating film was about 120 nm. A mask patterned on the organic thin film (a mask with a light emitting area of 5 mm x 5 mm) is installed,
In a vapor deposition apparatus, magnesium: silver = 10: 1 was co-deposited at 250 nm, and then silver was vapor-deposited at 300 nm, whereby an element 101 was formed.
【0077】上記で得られた素子の発光特性を、東陽テ
クニカ製ソースメジャーユニット2400型を用いて、直流
定電圧をEL素子に印加し発光させ、その輝度をトプコン
社の輝度計BM-8、また発光波長については浜松ホトニク
ス社製スペクトルアナライザーPMA-11を用いて測定し
た。素子101の印可電圧19Vでの発光輝度は1500cd/m2、
さらに電圧を上昇させたときの最高輝度(Lmax)は3400cd
/m2であった。また、発光スペクトルを測定の上、その
全スペクトル領域の発光エネルギーを積分して得られた
値と、入力エネルギー値の比から換算した発光の外部量
子効率を評価したところ、入力エネルギーに対する最高
発光外部量子効率(Qexmax)は0.77%であった。The light emission characteristics of the device obtained above were measured using a source measure unit 2400 manufactured by Toyo Technica to apply a constant DC voltage to the EL device to emit light, and the luminance was measured by a luminance meter BM-8 manufactured by Topcon Corporation. The emission wavelength was measured using a spectrum analyzer PMA-11 manufactured by Hamamatsu Photonics. The emission luminance of the element 101 at an applied voltage of 19 V is 1500 cd / m 2 ,
The maximum brightness (Lmax) when the voltage is further increased is 3400 cd
/ m 2 . In addition, after measuring the emission spectrum, the external quantum efficiency of light emission calculated from the ratio of the input energy value to the value obtained by integrating the light emission energy of the entire spectral region was evaluated. The quantum efficiency (Qexmax) was 0.77%.
【0078】素子101に対して、表1に記載したように
発光層の発光材料、その他の素材を変更した以外は、10
1と全く同じ素子構成の素子102〜123を作製した。これ
らの素子の発光特性(表中では(初期)と明記)、なら
びに素子を窒素雰囲気下、60℃で1週間保存したあと
の発光特性を評価した結果(表中では(保存)と明記)
を表2に示す。With respect to the element 101, except that the light emitting material of the light emitting layer and other materials were changed as described in Table 1,
Elements 102 to 123 having exactly the same element configuration as 1 were produced. Evaluation results of the light emission characteristics of these devices (specified as (initial) in the table) and the light emission characteristics after the devices were stored at 60 ° C. for one week in a nitrogen atmosphere (specified as (storage) in the table)
Are shown in Table 2.
【0079】[0079]
【表1】 [Table 1]
【0080】[0080]
【表2】 [Table 2]
【0081】[0081]
【化11】 Embedded image
【0082】表より、クマリン-6を発光材料として用い
た発光素子101〜104と比較して、本発明のポリマーを用
いた105〜110の素子では、初期の発光輝度および加熱条
件下保存後の発光輝度両者ともに優れていることが分か
る。また、三重項励起状態から発光可能な発光材料を用
いた素子である111〜123の結果において、111〜116の比
較例と117〜123の本発明のポリマーを用いた素子とを比
較すると、発光輝度、発光効率ともクマリン-6の場合よ
りも各段に向上しており、三重項励起状態から発光可能
な発光材料を本発明のポリマーと合わせて用いること
は、発光輝度、発光効率にとって有効であることが分か
る。From the table, as compared with the light-emitting elements 101 to 104 using coumarin-6 as a light-emitting material, the elements 105 to 110 using the polymer of the present invention showed an initial light emission luminance and a light emission after storage under heating conditions. It can be seen that both light emission luminances are excellent. In addition, in the results of 111 to 123, which are devices using a light emitting material capable of emitting light from a triplet excited state, comparing the comparative examples 111 to 116 with the devices using the polymer of the present invention of 117 to 123, Luminance and luminous efficiency are both improved more than in the case of coumarin-6, and using a luminescent material that can emit light from a triplet excited state together with the polymer of the present invention is effective for luminous luminance and luminous efficiency. You can see that there is.
【0083】[0083]
【発明の効果】本発明のポリマーを含有することによ
り、高輝度、高発光効率の発光素子を作成できることが
明らかになった。更に、高温保管後の輝度低下が小さく
耐久性に優れた素子を提供できる。It has been clarified that a light emitting device having high luminance and high luminous efficiency can be produced by containing the polymer of the present invention. Further, it is possible to provide an element which has a small luminance reduction after high-temperature storage and excellent durability.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H05B 33/14 H05B 33/14 B Fターム(参考) 3K007 AB00 AB02 AB03 AB13 BB05 CA01 CB01 CB03 DB03 EB00 FA01 4J100 AB07P AB07Q AB07R AL03Q AQ06P AQ06Q AQ06R BC43P BC43Q BC43R BC44P BC65P BC65Q BC65R BC73P BC79P BC79Q BC79R BC83P ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (reference) H05B 33/14 H05B 33/14 BF term (reference) 3K007 AB00 AB02 AB03 AB13 BB05 CA01 CB01 CB03 DB03 EB00 FA01 4J100 AB07P AB07Q AB07R AL03Q AQ06P AQ06Q AQ06R BC43P BC43Q BC43R BC44P BC65P BC65Q BC65R BC73P BC79P BC79Q BC79R BC83P
Claims (7)
部分構造と電子輸送性の部分構造を含むモノマーユニッ
トを表す。Bはそれ以外の構造を有するモノマーユニッ
トを表す。mは1以上の整数を表し、nは0以上の整数を
表す。p及びqはそれぞれモル分率(%)を意味し、pは
1〜100(%)を表し、qは0〜99(%)を表す。p
+q=100(%)である。)1. A polymer represented by the following general formula (1). Embedded image (Wherein, A represents a monomer unit having a hole transporting partial structure and an electron transporting partial structure in the same monomer unit. B represents a monomer unit having another structure. M is an integer of 1 or more.) And n represents an integer of 0 or more, p and q each represent a mole fraction (%), p represents 1 to 100 (%), and q represents 0 to 99 (%).
+ q = 100 (%). )
ル輸送性の部分構造の少なくとも1つがピロール、チオ
フェン、フラン、もしくはその縮合環誘導体を含むモノ
マーユニットであることを特徴とする請求項1に記載の
ポリマー。2. A method according to claim 1, wherein at least one of the hole transporting partial structures contained in A in the general formula (1) is a monomer unit containing pyrrole, thiophene, furan, or a fused ring derivative thereof. The polymer of claim 1.
輸送性の部分構造の少なくとも1つが、1つの環系に2
つ以上のヘテロ原子を含有するヘテロ環誘導体を含むモ
ノマーユニットであることを特徴とする請求項1に記載
のポリマー。3. A method according to claim 1, wherein at least one of the electron-transporting partial structures contained in A in the general formula (1) has two ring structures in one ring system.
The polymer according to claim 1, which is a monomer unit containing a heterocyclic derivative containing one or more heteroatoms.
モノマーユニットの少なくとも1つが炭素数4以上のバ
ラスト基を含有することを特徴とする請求項1〜3に記
載のポリマー。4. The polymer according to claim 1, wherein at least one of the monomer units represented by A or B in the general formula (1) contains a ballast group having 4 or more carbon atoms.
ニルモノマーユニットであることを特徴とする請求項1
〜4に記載のポリマー。5. The method according to claim 1, wherein the monomer unit in the general formula (1) is a vinyl monomer unit.
The polymer according to any one of claims 1 to 4, wherein
ポリマーを塗設して成る発光素子において、該ポリマー
の少なくとも1つが請求項1〜5に記載のポリマーを含
有することを特徴とする発光素子。6. A light emitting device comprising at least one polymer coated between an anode and a cathode, wherein at least one of the polymers contains the polymer according to claim 1. Light emitting element.
が可能な発光材料を、少なくとも1種使用することを特
徴とする請求項1〜6に記載の発光素子。7. The light emitting device according to claim 1, wherein at least one light emitting material capable of emitting light from a triplet exciton is used as the light emitting material.
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JP2001104580A JP2002302516A (en) | 2001-04-03 | 2001-04-03 | New polymer and light-emitting element using the same |
Applications Claiming Priority (1)
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---|---|---|---|
JP2001104580A JP2002302516A (en) | 2001-04-03 | 2001-04-03 | New polymer and light-emitting element using the same |
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Publication Number | Publication Date |
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Family
ID=18957416
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