JP2002261210A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2002261210A5 JP2002261210A5 JP2001054935A JP2001054935A JP2002261210A5 JP 2002261210 A5 JP2002261210 A5 JP 2002261210A5 JP 2001054935 A JP2001054935 A JP 2001054935A JP 2001054935 A JP2001054935 A JP 2001054935A JP 2002261210 A5 JP2002261210 A5 JP 2002261210A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- electrode body
- support electrode
- heat sink
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 230000017525 heat dissipation Effects 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Description
熱膨張緩和体を中間に介して半導体チップの一方の面を高温半田を用いて接合支持する支持電極体と、前記支持電極体を圧入する穴部を有する放熱板とを備え、前記半導体チップに発生した熱を前記放熱板を介して放熱する半導体装置において、前記支持電極体が、ジルコニウムを含有する銅合金製であって、前記支持電極体の硬度が前記放熱板の硬度よりも大きく、前記支持電極体が前記半導体チップを前記熱膨張緩和体を介して収容する凹部を有する柱状体であって、該支持電極体の凹部の底面が前記放熱板の上面と下面との間に位置する。 The semiconductor chip includes: a support electrode body for joining and supporting one surface of the semiconductor chip using high temperature solder with the thermal expansion relaxation body interposed therebetween, and a heat sink having a hole for press-fitting the support electrode body; In the semiconductor device which radiates the generated heat through the heat sink, the support electrode is made of a copper alloy containing zirconium, and the hardness of the support electrode is larger than the hardness of the heat sink, The support electrode body is a columnar body having a recess that accommodates the semiconductor chip via the thermal expansion relaxation body, and the bottom surface of the recess of the support electrode body is located between the upper surface and the lower surface of the heat sink.
Claims (9)
前記支持電極体を圧入する穴部を有する放熱板とを備え、前記半導体チップに発生した熱を前記放熱板を介して放熱する半導体装置において、
前記支持電極体が、ジルコニウムを含有する銅合金製であって、前記支持電極体の硬度が前記放熱板の硬度よりも大きく、前記支持電極体が前記半導体チップを前記熱膨張緩和体を介して収容する凹部を有する柱状体であって、該支持電極体の凹部の底面が前記放熱板の上面と下面との間に位置していることを特徴とする半導体装置。A supporting electrode body for joining and supporting one surface of the semiconductor chip with high temperature solder with the thermal expansion relaxation body interposed therebetween;
And a heat sink having a hole into which the support electrode body is press-fitted, wherein the heat generated in the semiconductor chip is dissipated through the heat sink.
The support electrode body, which is made of copper alloy containing zirconium, the hardness of the support electrode body much larger than the hardness of the heat radiating plate, the support electrode body said semiconductor chip through the thermal expansion buffer member 2. A semiconductor device according to claim 1, wherein the bottom surface of the recess of the support electrode body is located between the upper surface and the lower surface of the heat sink .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001054935A JP2002261210A (en) | 2001-02-28 | 2001-02-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001054935A JP2002261210A (en) | 2001-02-28 | 2001-02-28 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002261210A JP2002261210A (en) | 2002-09-13 |
| JP2002261210A5 true JP2002261210A5 (en) | 2005-05-19 |
Family
ID=18915196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001054935A Pending JP2002261210A (en) | 2001-02-28 | 2001-02-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002261210A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4479577B2 (en) | 2005-04-28 | 2010-06-09 | 株式会社日立製作所 | Semiconductor device |
| JP2007042765A (en) * | 2005-08-02 | 2007-02-15 | Cmk Corp | Multilayer printed wiring board and manufacturing method thereof |
| JP2009043925A (en) * | 2007-08-08 | 2009-02-26 | Sanken Electric Co Ltd | Semiconductor device and fitting method thereof |
| JP5331322B2 (en) | 2007-09-20 | 2013-10-30 | 株式会社日立製作所 | Semiconductor device |
| US10201872B2 (en) | 2011-12-20 | 2019-02-12 | Esab Ab | Contact tip for use in gas metal-arc welding |
| JP5992485B2 (en) * | 2014-10-24 | 2016-09-14 | 三菱電機株式会社 | In-vehicle DCDC converter |
| JP6377783B2 (en) * | 2017-01-18 | 2018-08-22 | エサブ・アーベー | Contact tips for gas metal arc welding |
-
2001
- 2001-02-28 JP JP2001054935A patent/JP2002261210A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6256201B1 (en) | Plate type heat pipe method of manufacturing same and cooling apparatus using plate type heat pipe | |
| US7408204B2 (en) | Flip-chip packaging structure for light emitting diode and method thereof | |
| EP1195746A3 (en) | Semiconductor device, semiconductor module and hard disk | |
| JP2002261210A5 (en) | ||
| JP2008016551A (en) | Semiconductor device | |
| TW201541569A (en) | Electronic package structure and ceramic substrate thereof | |
| TW201017837A (en) | Metal thermal interface materials and packaged semiconductors comprising the materials | |
| JP2007150329A (en) | Multi-layer light emitting device with integrated thermoelectric chip | |
| US11765861B2 (en) | Vapor chamber structure | |
| EP1199746A3 (en) | Resin-moulded semiconductor device with heat radiating electrode | |
| JPWO2007141851A1 (en) | Semiconductor package and electronic device | |
| JP4737436B2 (en) | Thermoelectric conversion module assembly | |
| TWI231613B (en) | Package structure of enhanced power light emitting diode | |
| JPH1168360A (en) | Cooling structure for semiconductor element | |
| TW200805696A (en) | Illuminating equipment of high-power and clustered light-emitting diodes coupled to high efficiency heat-spreading and heat-dissipating module | |
| TW200845349A (en) | Thermally enhanced single inline package (SIP) | |
| JP2002261210A (en) | Semiconductor device | |
| TWI258871B (en) | Improved structure for LED package | |
| JPS6092642A (en) | Forced cooling device for semiconductor device | |
| TWM458666U (en) | Heat dissipation lead frame structure | |
| JPS5823462A (en) | Cooling method for semiconductor device | |
| JPS6252949A (en) | Laminated type ceramic package | |
| JP2005045105A (en) | module | |
| JPH02187058A (en) | Semiconductor device package | |
| KR20240030767A (en) | Heat dissipation structure for high-power LED lighting |