JP2002249400A - Method for producing compound semiconductor single crystal and use thereof - Google Patents

Abstract

(57) [Problem] To provide a method for manufacturing a nitride semiconductor single crystal having a low dislocation density by a simple method. SOLUTION: The general formula In is provided on a semiconductor silicon substrate provided with a mask having a through hole having a circle-converted diameter of 1 μm or less.
xGayAlzN (where x + y + z = 1, 0 ≦ x ≦
1. A method for producing a compound semiconductor single crystal, characterized by selectively growing a compound semiconductor single crystal represented by the following formula: 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to the general formula InxGa
yAlzN (however, x + y + z = 1, 0 ≦ x ≦ 1, 0
≦ y ≦ 1, 0 ≦ z ≦ 1) Method for producing compound semiconductor (hereinafter sometimes simply referred to as “nitride semiconductor”), compound semiconductor single crystal produced by the method, and compound semiconductor single crystal And a semiconductor device having:

[0002]

2. Description of the Related Art Nitride semiconductors are used as light-emitting devices and optical devices such as photodetectors and high-mobility transistors in the ultraviolet to yellow range. A light emitting diode or a laser diode using a compound semiconductor represented by the above general formula.
In general, a compound or a UV detector has a different composition (x, y, z values) of the compound semiconductor grown on a sapphire or silicon carbide (SiC) substrate.
It is manufactured using a laminated structure of a plurality of thin films. However, the quality of a semiconductor single crystal obtained by a usual method is not sufficient due to a large lattice constant difference and a difference in thermal expansion coefficient existing between a substrate material and a semiconductor material constituting an element, and the quality required for practical use is not sufficient. In order to obtain device characteristics, two main methods have been proposed. The first method is a multi-stage growth method in which a different kind of thin film is inserted during growth to prevent dislocation extension. For example, to realize a laser diode, a thin film serving as a mask is inserted to reduce dislocations generated near the interface with the substrate, and the effect of reducing dislocations by lateral growth is used. In spite of such industrial difficulties, the reason that the compound semiconductor having the above-mentioned general formula was produced on the substrate was that no other suitable substrate was found.

As the only method for solving such a technical problem, it has been proposed to use a material given by the above general formula such as GaN as a substrate. It is practically difficult to obtain a substrate having the same, and it is difficult to stably supply the device.

It is a well-known fact that a semiconductor integrated circuit using silicon has a plurality of elements monolithically integrated and mounted on a single substrate to improve its characteristics. If an optical device can be manufactured by growing a compound semiconductor on a silicon substrate by crystal growth, it is expected to contribute to advancement of optical technology such as optical communication. Attempts to establish such techniques have been made for a long time, but no successful examples have been found. This is mainly because the lattice constant and physical properties of the compound semiconductor and silicon, which are frequently used as optical semiconductors, are significantly different from each other, and there is no method for obtaining a practically high-quality compound semiconductor crystal on a silicon substrate. For example, GaAs grown on a silicon substrate by a conventional method has cracks and is not suitable for device fabrication.

The general formula InxGayAlzN (where x
+ Y + z = 1, 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1)
In the nitride semiconductor represented by the formula, by applying an appropriate mask to the surface of the substrate during crystal growth, and by performing appropriate treatment of the interface during crystal growth, the dislocation generated at the interface with the substrate can be reduced. A high-quality single crystal free of cracks can be selectively produced. Although the dislocation density is about 10 ¹⁰ / cm ^{2 in the} usual method, the dislocation density can be reduced to about 10 ⁸ / cm ² by subjecting the silicon surface to aluminum treatment before crystal growth. The main reason for the introduction of cracks is that the difference in the coefficient of thermal expansion is mainly caused by defects such as dislocations at the interface with the substrate. However, even with the above method, if the semiconductor given by the above general formula contains about 10 ⁸ dislocations / cm ^2, it greatly affects the performance of the semiconductor element. For this reason, it has not been possible to provide a device having a lifetime sufficient for practical use even when a semiconductor laser is manufactured.

Therefore, in order to obtain a high quality semiconductor having a low dislocation density, a multi-step growth process such as introducing a buffer layer has been attempted. However, the dislocations generated at the growth interface originate from the coalescence of multiple growth nuclei created by the introduction of the buffer layer, and cannot be avoided in the case of one-sided growth in which the lattice constant with the substrate is significantly different. It is a phenomenon. According to the conventional technology, the generation and coalescence of the growth nuclei can be controlled, and the dislocation density is 10 ⁷ / c.
It was difficult to keep it below m ² .

As another method of growing a high-quality nitride semiconductor, a method of obtaining a thick-film gallium nitride can be considered. Examples of a method for growing the nitride semiconductor represented by the general formula include a molecular beam epitaxy method, a metal organic chemical vapor deposition method, and a hydride vapor phase epitaxy method. The hydride vapor phase epitaxy is suitable as a method for obtaining a thick film sample. As a method for growing a nitride semiconductor on a silicon substrate, a molecular beam epitaxial method or a metal organic chemical vapor deposition method has been used. This is because hydride vapor phase epitaxy has strong reactivity between silicon substrate and atmospheric gas,
This is because the stability of the substrate is not guaranteed. For this reason, there is no example in which a nitride semiconductor thick film was successfully formed on a silicon substrate. Conventionally, a thick film is grown on a sapphire substrate, and a special method such as laser irradiation has been used for separation from the substrate. This is because there was no method for mechanically or chemically removing sapphire.

[0008]

SUMMARY OF THE INVENTION In view of the above-mentioned problems of the prior art, the present invention relates to the general formula Inx having a low dislocation density.
GayAlzN (where x + y + z = 1, 0 ≦ x ≦
It is an object to provide a method for easily forming a nitride semiconductor single crystal represented by (1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1) on a silicon substrate. The dislocation density is 10 ⁷ / cm ²
It is another object of the present invention to form a nitride semiconductor film that can be used for the following practical applications without performing multi-stage growth. Still another object is to provide a method for forming a relatively thick nitride semiconductor crystal by an efficient method.

[0009]

Means for Solving the Problems The present inventors have limited a region where a nitride semiconductor is deposited on a silicon substrate in a vapor phase growth method by using a mask manufactured by using a semiconductor microfabrication technique, and located in the same place. It has been found that if the number of generated growth nuclei is reduced, the number density of seed crystals can be reduced, and a nitride semiconductor single crystal having a low dislocation density can be obtained on a silicon substrate.

That is, according to the present invention, the general formula InxGayAlzN (where x + y +) is formed on a semiconductor silicon substrate provided with a mask having a through hole having a circle-converted diameter of 1 μm or less.
A method for producing a compound semiconductor single crystal, characterized by selectively growing a compound semiconductor single crystal represented by z = 1, 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1). provide.

As a preferred embodiment of the production method of the present invention,
A mode in which the compound semiconductor single crystal grown in the through-hole is further grown laterally on the mask; a semiconductor silicon substrate provided with a mask having a plurality of through-holes having a circular equivalent diameter of 1 μm or less as the semiconductor silicon substrate. An embodiment using a mask in which the number of the through holes is 1 × 10 ⁷ / cm ² or less; a plurality of compound semiconductor single crystals grown in the through holes and grown laterally on the mask; A mode in which the cells are further integrated and united;
An embodiment in which a crystal is grown by metalorganic vapor phase epitaxy until the film thickness becomes 1 μm or more, and then a crystal is grown by hydride vapor phase epitaxy at a temperature of 400 ° C. or more. Can be mentioned.

The present invention also provides a compound semiconductor single crystal manufactured using the above manufacturing method and separated from a silicon substrate. In particular, the general formula InxGayAlzN having a side of 1 mm square or more and a thickness of 50 μm or more (provided that x + y + z = 1, 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z
≦ 1) can be provided.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a semiconductor device of the present invention will be described in detail. In this specification, “to” means a range including the numerical values described before and after it as a minimum value and a maximum value, respectively.

In the method of manufacturing a compound semiconductor single crystal according to the present invention, a semiconductor silicon substrate (1) provided with a mask (2) having a through hole having a circular equivalent diameter of 1 μm or less is used (see FIG. 1). The type of the semiconductor silicon substrate is not particularly limited, and the general formula InxGayAlzN (where x + y + z
= 1, 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1) A silicon substrate generally used for growing a compound semiconductor single crystal represented by (1) can be widely used. In the following description of the present specification, a case where a semiconductor silicon substrate having a (111) plane is used as a plane orientation will be described as an example, but a silicon substrate that can be used in the present invention is not limited to this. is not.

A mask (2) formed on a silicon substrate
Has at least one through hole having a circle-converted diameter of 1 μm or less. A plurality of through holes may be formed. When the through holes are used to form quantum dots, the through holes may be provided at positions corresponding to the dots to be formed.
In addition, when it is used for producing a layered compound semiconductor single crystal, it is preferable that the through holes are regularly opened. At this time, the interval between the through holes is 0.5 to 30.
μm, more preferably 1 to 15 μm, even more preferably 3 to 10 μm.

The circle-converted diameter of the through hole formed in the mask is preferably 20 to 450 nm, and 30 to 3 nm.
More preferably 50 nm, 50 to 250 nm
Is more preferable. The thickness of the mask is 1
Preferably it is 0 to 1000 nm, and 20 to 500 nm
nm, more preferably 30 to 100 nm.

The material of the mask is not particularly limited as long as it can function as a mask when a nitride semiconductor is selectively grown on a silicon substrate. For example, an amorphous material such as silicon nitride or silicon dioxide, or a crystal growth temperature of a nitride semiconductor (usually 100
(Approximately 0 ° C.) and a high melting point material such as a tungsten-based material that can withstand the atmosphere.

The method for forming the mask on the silicon substrate is not particularly limited, and a commonly used method can be employed. For example, a silicon nitride film or a silicon dioxide film (2) is deposited on the silicon substrate (1) by sputtering or CVD. Next, a circular or rectangular through hole is formed in the film by a method such as photolithography or electron beam lithography. When a through hole having a circle-equivalent diameter of 200 nm or less is formed, a photolithography method can be used in addition to the electron beam exposure method. When the size of the through-hole is as small as about 200 nm, the shape of the through-hole has almost no effect on the subsequent crystal growth, and thus the shape of the through-hole may be arbitrary. This is because the growth form of the nitride semiconductor depends on facets.

In the manufacturing method of the present invention, a nitride semiconductor is selectively grown on the masked silicon substrate thus manufactured. Specifically, the crystal can be grown by introducing the masked silicon substrate into a nitride semiconductor crystal growth furnace, for example. As a method of crystal growth, it is preferable to use a metal organic chemical vapor deposition method capable of selective growth. As a raw material, trimethylgallium, trimethylindium, trimethylaluminum, ammonia, or the like is used, and the growth temperature is usually set to about 800 ° C to 1200 ° C. The composition of the compound semiconductor represented by the general formula InxGayAlzN, that is, the values of x, y, and z are controlled by the supply ratio of the raw material. When a p-type or n-type semiconductor is used, separate raw materials are prepared for adding Mg or Si. When producing a pn junction, raw materials to be added are sequentially supplied.

Crystal growth does not occur on the mask material, but only on silicon single crystals exposed in through holes formed in the mask. When the nitride semiconductor single crystal thus produced on the silicon substrate is grown in a growth atmosphere, lateral growth on the mask occurs, and the single crystal is enlarged, and the single crystal exceeds the size of the through hole. Become. This single crystal does not contain dislocations in principle, and generally becomes a dislocation-free crystal. Dislocations that occur accidentally in the through-holes bend on the in-plane lateral mask in the film, resulting in a crystal with virtually no dislocations above the crystal. A light emitting diode fabricated using this crystal
The internal quantum efficiency of the semiconductor laser can be improved by one digit or more compared with the conventional method, and the lifetime of the semiconductor laser can be improved by two orders or more as compared with the conventional method.

The nitride semiconductor crystal (3) to be formed is usually hexagonal, and is generally a hexagonal frustum-shaped single crystal on a (111) silicon substrate (FIG. 3). The hexagonal truncated pyramid has six (1-101) facet faces (3
0) is a side surface, and a (0001) plane, that is, a C plane (31) is a top surface. Since this growth is an epitaxial growth, the crystal orientation of the hexagonal pyramid-shaped single crystal thus obtained is almost independent of the shape of the through hole, and is determined by the crystal orientation of the silicon substrate.

The size of the single crystal obtained at the initial stage of growth depends on the size of the through hole formed on the mask. In the initial studies by the present inventors, in order to make this crystal a single crystal without dislocations, the size of the through hole had to be 200 nm or less. This is because the size of the seed growth nucleus is 2
It means that it is not more than 00 nm. However, subsequent studies have shown that this condition can be relaxed by changing the growth conditions. For example, when a through-hole having a circle-equivalent diameter larger than 200 nm was formed, the height of the truncated hexagonal crystal in which a dislocation-free region was obtained was about the same as the size of the through-hole. For example, when a through hole with a circle-converted diameter of 500 nm is opened, the height is 500 nm.
Until then, dislocations were sometimes included. That is, when growth was performed to a thickness of 500 nm or more, it was possible to obtain a portion without dislocation.

The epitaxial growth of a nitride semiconductor on a silicon substrate is a typical type of heteroepitaxial growth on a different kind of material, and the condition for forming a growth nucleus at the initial stage of growth affects the result. That is, if ammonia supplied as a nitride semiconductor raw material reacts with silicon to form a silicon nitride film on a clean surface, a nitride semiconductor crystal cannot be obtained. Before the silicon nitride film can be formed, it is necessary to time the nitride semiconductor crystal. Normally, if trimethyl aluminum is supplied before supplying ammonia, the strongest reactivity of aluminum causes the outermost surface of the silicon substrate to be covered with aluminum and nucleation proceeds smoothly, and subsequent crystal growth of the nitride semiconductor single crystal is smooth. Done in The surface treatment (pretreatment) technique using aluminum is extremely important for realizing the present invention. If this pretreatment is not appropriate, the crystal orientation of the obtained growth nucleus differs depending on the through hole, the uniformity of the device characteristics is impaired, and when the growth time is lengthened and the microcrystals are combined, the nitride semiconductor becomes A grain structure composed of a plurality of single crystals may be obtained.

The crystal growth according to the present invention is a selective epitaxial growth, in which a nitride semiconductor is not directly grown on a mask, but depending on the growth conditions (temperature, atmosphere gas), polycrystals may be deposited on the mask. is there. Such polycrystal deposition on the mask may hinder the process in which the truncated hexagonal pyramidal crystal grows on the mask in the horizontal direction. Precipitation of polycrystals on the mask can be prevented by shortening the time for supplying aluminum in general. According to the study of the present inventors, if the supply time of aluminum is 4 minutes or more, polycrystals may be deposited on the mask, so the supply time of aluminum is preferably within 4 minutes.

When a long period of growth is performed using a silicon substrate provided with a mask formed by arranging a plurality of through-holes, the hexagonal pyramids grow large, and then the adjacent hexagonal pyramids unite with each other. The time required for the coalescence is determined by the growth rate and the distance between the through holes. For example, when the distance between the through holes is 2 μm, the samples are united by growth for 20 minutes, and a sample in which the entire surface of the substrate is covered with the nitride semiconductor is obtained by growth for 30 minutes. In this sample, the dislocations are seen at the coalesced part, but the density is roughly determined by the number of through holes. Therefore, if crystal growth is performed using a mask having a through-hole density of 10 ⁷ / cm ² or less, a single crystal having a dislocation density of 10 ⁷ / cm ² or less can be obtained. There has been no example in which a single crystal having such a low transition density has been formed on a silicon substrate so far, and conventionally, it was not possible to obtain a single crystal without performing multi-stage growth.

The present inventors attempted to grow GaN using this sample by hydride vapor phase epitaxy, which can provide a higher growth rate than metalorganic vapor phase epitaxy.
aN was obtained. For example, a single crystal having a thickness of 200 μm was obtained on a silicon substrate by growth for 2 hours. When the silicon substrate was removed by chemical etching, a thickness of 20
A 0 μm GaN single crystal was obtained. The quality of this crystal was better than that of a conventional one fabricated on a silicon substrate. For example, the X-ray diffraction line (000
4) The peak half width was 400 seconds, which was narrower than that obtained on a sapphire substrate.

If the thickness of a nitride semiconductor formed on a silicon substrate exceeds 1 μm, cracks occur in the conventional method. For this reason, it has been difficult to obtain a uniform thick film of 1 μm or more over a large area on a silicon substrate. For example, there is no report that a thick film having a side of 1 mm or more has been obtained. There are various theories as to the cause of cracks,
The main factors are (1) dislocations or defects generated at the silicon substrate interface due to lattice mismatch with the substrate, and (2) tensile strain due to the coefficient of thermal expansion with the substrate.
With the metal organic chemical vapor deposition method alone, the generation of dislocations and defects at the substrate interface was significantly suppressed compared to the conventional method, and the generation of cracks was suppressed. However, it was not possible to obtain a uniform thick film crystal having a side of 1 mm or more. could not.

As a method for obtaining a thick film of 100 μm or more, there is a hydride vapor phase epitaxy method. When an attempt is made to obtain a large-area uniform film having a thickness of 100 μm or more by hydride vapor phase epitaxy using a thick film of 1 μm or more obtained on a silicon substrate by the above method, the silicon substrate is damaged by a growth atmosphere from cracks. To obtain satisfactory results. Then, the influence of the difference in thermal expansion coefficient, which is the second cause of cracks, was examined. As a result, it was clarified that the growth by the metal organic chemical vapor deposition method was performed at a high temperature of 1000 ° C., and cracks occurred during the process of lowering the sample temperature to room temperature. Therefore, after the metal organic chemical vapor deposition is performed, the sample is transferred to a hydride vapor deposition reactor while maintaining the temperature of the sample at 400 ° C. or higher, preferably 500 ° C. or higher, more preferably 600 ° C. or higher, and continuously hydride vapor phase When growth was attempted, a uniform film having a thickness of 100 μm without cracks was obtained. In this case, needless to say, it is necessary to deposit a protective film such as a silicon oxide film on the back surface of the silicon substrate used for the hydride vapor phase epitaxy.

In the single crystal obtained by the above method, p
Points to keep in mind when fabricating an n-junction will be described. First, due to the mismatch between the lattice constants of silicon and the nitride semiconductor, the portion of the nitride semiconductor close to the silicon substrate is generally n-type and has low resistance. For this reason, it is often difficult to first produce a p-type as a conduction type. First,
It is preferable to form the p-type layer after forming the n-type layer. In the case where a p-type nitride semiconductor is grown after an n-type nitride semiconductor layer is formed, the growth rate in the C-axis direction is generally higher than the growth rate in the (1-101) facet plane direction when the C plane of the crystal appears. . With this in mind, a wide (0001) facet plane, that is, a C plane can be obtained by adjusting the growth conditions by selective growth. For example, the area of the C-plane tends to increase as the growth temperature increases or as the supply amount of a group III raw material such as trimethylgallium decreases. Taking these conditions into consideration, if the conduction type is changed after obtaining the C-plane of the required size, a good quality bonding surface can be obtained. At the time of crystal growth of a p-type semiconductor, a thin p-type layer is also formed on the (1-101) facet plane 30, and a pn junction is formed here.
1) The thickness of the p-type layer is smaller on the facet surface than on the C surface and does not significantly affect the results. If it is necessary to increase the thickness of the p-type layer, the growth region may be limited again by lithography and regrowth may be performed. By this method, a laser diode can be formed on a silicon substrate. If the group V source is supplied in a larger amount (for example, the ratio is 10,000 or more) than the group III source during the selective growth, (0001)
The growth rate of the surface increases, the (1-101) facet disappears, and the side surface becomes perpendicular to the substrate. This surface can be used as the end surface of the laser.

Next, a method for forming an electrode will be described. The junction surface such as the pn junction of the diode according to the present invention is parallel to the C-plane of the nitride semiconductor crystal. That is, the current flowing through the diode is often perpendicular to the C-plane. Diodes require two electrodes. A metal as an electrode cannot be inserted between the nitride semiconductor and silicon fabricated on the silicon substrate due to the principle of fabrication. However, if an n-type low-resistance material is used as the silicon substrate, the substrate itself can be used as a lower electrode. Available as For example, an electrode can be provided on the back surface of the silicon substrate.

[0031]

According to the manufacturing method of the present invention, a high-quality nitride semiconductor can be obtained on a silicon substrate by a simple method, and the production cost of a nitride semiconductor device conventionally manufactured on a sapphire substrate can be reduced. Can be reduced. Further, by combining metalorganic vapor phase epitaxy and hydride vapor phase epitaxy, a thick-film nitride semiconductor crystal using a silicon substrate can be manufactured, and a nitride semiconductor for large-area homoepitaxial growth is provided. And its industrial value is extremely high.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating one embodiment of a silicon substrate provided with a mask having a through hole.

FIG. 2 is a diagram showing an example of a nitride semiconductor single crystal selectively grown according to the manufacturing method of the present invention.

FIG. 3 is a diagram showing details of a hexagonal frustum structure of a nitride semiconductor single crystal formed on a silicon substrate.

FIG. 4 is a cross-sectional view of a nitride semiconductor and a silicon substrate obtained by combining a plurality of hexagonal pyramids.

FIG. 5 is a cross-sectional view of a sample subjected to a hydride method.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Mask 3 Nitride semiconductor single crystal 30 (1-101) facet plane of nitride semiconductor 31 (0001) facet plane of nitride semiconductor 32 Nitride semiconductor obtained by metal organic chemical vapor deposition 33 hydride vapor phase Nitride semiconductor obtained by growth method

Continued on front page F term (reference) 4G077 AA03 BE11 DB05 DB08 EA01 ED06 EE07 EF01 TB03 TB05 TC01 TC06 TC13 TC19 5F041 AA40 CA23 CA33 CA34 CA40 CA65 CA67 CA74 5F045 AB18 AF03 BB12 BB13 CA10 DA67 DB02 DB04 5F073 DA75 EA29

Claims (11)

[Claims] 1. A semiconductor device according to claim 1, wherein a mask having a through hole with a circle-converted diameter of 1 μm or less is provided on a semiconductor silicon substrate.
xGayAlzN (where x + y + z = 1, 0 ≦ x ≦
1. A method for producing a compound semiconductor single crystal, characterized by selectively growing a compound semiconductor single crystal represented by the following formula: 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1). 2. The method of manufacturing a compound semiconductor single crystal according to claim 1, wherein the compound semiconductor single crystal grown in the through hole is further grown laterally on the mask. 3. The compound semiconductor unit according to claim 1, wherein a semiconductor silicon substrate provided with a mask having a plurality of through holes having a circle-equivalent diameter of 1 μm or less is used as said semiconductor silicon substrate. Method for producing crystals. 4. The compound semiconductor single crystal according to claim 3, wherein the number of through holes having a circle-converted diameter of 1 μm or less formed in said mask is 1 × 10 ⁷ / cm ² or less. Production method. 5. The method according to claim 1, wherein the plurality of compound semiconductor single crystals grown in the through-hole and grown laterally on the mask are further grown so as to be united and integrated on the mask. 5. The method for producing a compound semiconductor single crystal according to 3 or 4. 6. The method for producing a compound semiconductor single crystal according to claim 1, wherein the compound semiconductor is grown by a metal organic chemical vapor deposition method. 7. A film having a thickness of 1 μm by metal organic chemical vapor deposition.
The method for producing a compound semiconductor single crystal according to claim 6, wherein after the crystal is grown to the above, the crystal is further grown by a hydride vapor phase epitaxy at a temperature of 400 ° C. or more. 8. A compound semiconductor single crystal manufactured using the manufacturing method according to claim 1 and separated from a silicon substrate. 9. A 1 μm square or more side having a thickness of 50 μm, manufactured using the manufacturing method according to claim 1.
m or more of the general formula InxGayAlzN (where x
+ Y + z = 1, 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1)
A compound semiconductor single crystal represented by 10. A semiconductor device using a compound semiconductor single crystal manufactured by using the manufacturing method according to claim 1. 11. A quantum dot manufactured by using the manufacturing method according to claim 3 or 4.