JP2002210700A - Machining device and method with scanning-type probe - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a machining device and a machining method with a scanning-type probe capable of preventing a probe from being damaged and stably executing the machining with a simple structure. SOLUTION: In this machining device or method with the scanning-type probe for machining a sample by relatively scanning the probe on the sample at a predetermined scanning speed corresponding to a machining pattern, an interval between the probe and the sample is controlled to allow the probe to be intermittently brought into contact with a surface of the sample by the vibration, and the working physical quantity is continuously applied in the intermittent contact state to execute the machining.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus for processing a sample using a principle of an SPM (scanning probe microscope) for acquiring information on the sample by relatively scanning the sample with a probe. It relates to a processing method.

[0002]

2. Description of the Related Art In recent years, a scanning tunneling microscope (hereinafter abbreviated as STM) capable of directly observing the electronic structure of a conductor has been developed [G. Binning et al. Phys. R
ev. Lett, 49, 57 (1982)]
M (atomic force microscope), SCM (scanning capacity microscope),
Microscope devices, such as NSOM (near field microscope), which obtain various information and its distribution by scanning a probe with a sharp tip, have been developed one after another. At present, these microscope groups are collectively referred to as scanning probe microscopes (SPM), and have been widely used as means for observing microstructures having resolution at the atomic and molecular levels.

Further, using the principle and apparatus configuration, a voltage is applied between the tip of the probe and the sample to perform anodic oxidation, the probe is pressed against the sample to perform cutting, and a N
Since processing with an accuracy close to the measurement resolution is possible by exposing the resist using an SOM probe, etc.
Its application is expected as a means for processing structures below the processing limit of photolithography, such as from about 100 nm to about 100 nm.

[0004] For example, Japanese Patent Application Laid-Open No. 9-172213 proposes an electronic device having a fine structure manufactured by locally modifying a conductive region using a scanning tunneling microscope. Also, Japanese Unexamined Patent Publication No. 6-09
No. 6,714, proposes a surface micromachining apparatus for processing a sample surface by making a probe surface of a scanning probe microscope conductive and applying a voltage between the probe tip and the sample surface. Also, JP-A-10-34070
No. 0 proposes a cutting method for processing a sample surface by relatively moving the probe and the sample surface while the probe supported by an elastic body is in contact with the sample surface.

[0005]

Since these SPM devices use a probe having a very sharp tip, a general problem is damage to the probe caused by contact between the sample and the probe. . An increase in the radius of curvature of the tip of the probe due to such damage causes a decrease in resolution as a microscope device and an increase in processing size as a processing device.

Conventionally, as a solution to these problems, particularly in an AFM observation apparatus, a probe is vibrated, and the sample is brought into contact with the tip of a probe by striking the sample surface.
The tapping method, which controls the distance so that the amplitude of the displacement of the probe is constant, or the atomic force acting between the probe tip and the sample surface in a non-contact state by making the probe resonate, A non-contact method or the like that detects a change in the amplitude or resonance frequency and controls the distance so as to keep the change constant has been proposed.

For example, in Japanese Patent Application Laid-Open No. 08-321085, this is applied to a processing apparatus, a short pulse voltage is applied between the probe samples at a distance suitable for processing by adjusting the oscillation cycle and timing, and the electric field evaporation is performed. A processing method has been proposed. However, in this method, it is difficult to adjust the timing, and the structure of the apparatus becomes complicated. In addition, since the probe receives an instantaneous force due to the application of the processing pulse, it is difficult to control the probe. There is a problem in that it is sensitive.

In the contact processing system as disclosed in Japanese Patent Application Laid-Open No. 6-097714, the relationship between the two parameters of the applied voltage and the applied charge is determined by the resistance between the probe and the sample. Therefore, they cannot be determined independently, and it is difficult to cope with a change in contact resistance during processing.

Accordingly, an object of the present invention is to provide a processing apparatus and a processing method using a scanning probe capable of solving the above-mentioned problems, preventing damage to a probe with a simple configuration, and performing stable processing. Is what you do.

[0010]

SUMMARY OF THE INVENTION The present invention provides a processing apparatus and a processing method using a scanning probe configured as described in the following (1) to (20) in order to achieve the above object. (1) In a processing apparatus using a scanning probe for processing a sample by relatively scanning a sample at a predetermined scanning speed on a probe according to a processing pattern, vibrating means for vibrating the probe, and the probe And an interval control means for controlling an interval between the probe and the sample, and a processing physical quantity applying means for applying a processing physical quantity between the probe and the sample, wherein the probe is intermittently applied to the surface of the sample by the vibration. The distance between the probe and the sample is controlled so as to contact the sample, and processing is performed by continuously applying the processing physical quantity between the probe and the sample. Processing equipment using a scanning probe. (2) The processing apparatus using a scanning probe according to the above (1), further including a scanning speed calculating unit that calculates the scanning speed using the frequency of the vibration and the processing size. (3) The scanning speed calculating means, when a size of a portion to be processed of the sample at a limit point where the probe and the sample come into contact with each other is a diameter R and a frequency of the vibration is f, The processing apparatus using the scanning probe according to the above (2), wherein the maximum value _VP-max is configured to satisfy the following conditional expression. V _P-max = R · f (4) The scanning speed calculating means sets the size of the processed portion of the sample to a diameter R, sets the frequency of the vibration to f, and calculates the overlapping ratio between the adjacent processed portions. when in the length of the scanning direction and a%, the scanning speed V _P is, the processing apparatus using a scanning probe according to the above (2), characterized in that it is configured to satisfy the following condition . V _P ≦ R · f · (1-a / 100) (5) The interval control means detects a physical quantity input to the processing by application of the processing physical quantity applying means, and an input physical quantity detection The apparatus according to any one of (1) to (4), further including an interval control amount calculating unit that calculates an interval control amount between the probe and the sample based on the physical amount detected by the unit. Processing equipment with a scanning probe. (6) The interval control means detects an interval between the probe and the sample, and calculates an interval control amount between the probe and the sample based on the distance detected by the interval detection means. (1) an interval control amount calculating means for calculating, and an interval control amount switching means for switching a control amount used for interval control to another control amount when the distance becomes equal to or smaller than a predetermined value. A processing apparatus using the scanning probe according to any one of (1) to (4). (7) The processing apparatus using a scanning probe according to any one of (1) to (6), wherein the processing physical quantity applying unit is a voltage applying unit. (8) The above (1), wherein the processing physical quantity applying means is a physical quantity applying means such as near-field light or a magnetic field.
A processing apparatus using the scanning probe according to any one of (1) to (6). (9) The processing apparatus using a scanning probe according to any one of (1) to (8), wherein the input physical quantity detection unit is a current detection unit. (10) The processing apparatus using a scanning probe according to any one of (1) to (9), wherein the processing is performed by anodic oxidation. (11) In a processing method using a scanning probe for processing a sample by relatively scanning a sample on a sample at a predetermined scanning speed according to a processing pattern, the probe intermittently intermittently oscillates on the surface of the sample by the vibration. Controlling the distance between the probe and the sample so that the probe is in contact with the sample, and performing the processing by continuously applying the processing physical quantity in a state where the probe and the sample are intermittently contacted. Processing method. (12) The processing method using a scanning probe according to (11), wherein the scanning speed is calculated using the frequency of the vibration and the processing size. (13) When the scanning speed calculation determines that the size of the portion to be processed of the sample at the limit point where the probe and the sample come into contact with each other is a diameter R and the frequency of the vibration is f, the maximum of the scanning speed is The processing method using the scanning probe according to the above (12), wherein the value _VP-max is set so as to satisfy the following conditional expression. _VP-max = R · f (14) In the scanning speed calculation, the size of the processed portion of the sample is set to a diameter R, the frequency of the vibration is set to f, and the overlapping ratio between the adjacent processed portions is scanned. when the a% in the direction of the length, the scanning speed V _P is a processing method using a scanning probe according to the above (12), characterized in that it is carried out so as to satisfy the following conditional expression. _VP ≦ R · f · (1−a / 100) (15) The control of the interval detects a physical quantity input to processing by application of the processing physical quantity applying unit, and based on the detected physical quantity, (11) to (11) to (10), wherein the distance control amount is calculated by calculating a distance control amount between the probe and the sample.
A processing method using the scanning probe according to any one of (14). (16) The interval control detects an interval between the probe and the sample, and calculates an interval control amount between the probe and the sample based on the detected distance so that the distance is constant. When the value becomes equal to or less than the value, the control amount used for the interval control is switched to another control amount, and the control is performed.
A processing method using the scanning probe according to any one of (14). (17) The processing method using a scanning probe according to any one of (11) to (16), wherein a voltage is applied as the application of the processing physical quantity. (18) As the application of the processing physical quantity, a physical quantity such as near-field light or a magnetic field is applied.
A processing method using the scanning probe according to any one of 1) to (16). (19) The processing method using a scanning probe according to any one of (11) to (18), wherein the input physical quantity to be detected is a current value. (20) The processing method using a scanning probe according to any one of (11) to (19), wherein the processing is performed by anodic oxidation.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In an embodiment of the present invention,
By applying the above configuration and continuously applying a processing physical quantity in a state where the probe is vibrated and intermittently brought into contact with the sample surface, processing with a simple configuration and less damage to the probe can be performed. Is possible. Further, by setting the scanning speed at the time of processing to a certain value or less, it is possible to form a continuously processed portion. In addition, by controlling the relative distance between the probe and the sample to change the contact time between them, the physical quantity input per fixed time is controlled, and the resistance between the probe and the sample during processing is reduced. Stable processing is possible even in the case of change. Furthermore, when the distance between the probe and the sample becomes less than a certain value, switching to control using the distance between the two causes processing of the sample including the part where the input physical quantity cannot be detected. Can be prevented.

[0012]

Embodiments of the present invention will be described below. [Embodiment 1] FIG. 1 shows the configuration of a processing apparatus using a scanning probe according to Embodiment 1 of the present invention. First, the device of this embodiment and its operation will be described. As shown in FIG.
A probe 111 including a conductive elastic body 109 and a probe 110 is disposed so as to face the surface of the sample 112. The probe 111 is attached to a vibration actuator 114, the sample 112 is attached to a z drive stage 107, and the z drive stage 107 is attached to an xy drive stage 108. The vibration circuit 101 has a vibration actuator 11 with a predetermined frequency and amplitude.
4 is driven to excite the probe 111. This allows
The probe 110 comes into contact with the sample 112 by hitting the surface.

The scanning amount instructing circuit 104 outputs a scanning control amount to the xy control circuit 106 in accordance with a previously prepared processing pattern and a scanning speed. The xy control circuit 106 controls the xy drive stage 108 according to the instructed control amount, and relatively scans the probe 110 and the sample 112. During scanning, the voltage application circuit 113 applies a voltage between the probe 110 and the sample 112 to process the surface of the sample 112. The processing pattern can be appropriately determined in a desired shape, and the scanning speed is determined as follows.

In FIG. 2, it is assumed that the probe 110 and the sample 112 are in contact with each other in a linear probe contact section 205 in the probe tip trajectory 204, and that processing is performed in this state. Probe 11
Considering the case where the distance between 0 and the sample 112 is increased and the limit of contact between them, that is, the case where the probe contact section 205 has a point shape, and the size of the portion to be processed at this time is a diameter R, the two are adjacent to each other. If the interval between the probe contact sections 205 is within R, the processed portion is continuous and can be processed in a linear shape. Assuming that the excitation frequency of the excitation circuit 101 is f, the maximum value of the scanning speed for performing such linear processing is _VP-max, and _VP-max = R · f. In order to further ensure the processing, if the overlapping ratio between adjacent processed parts is set to a% in the length in the scanning direction, the processing speed _VP is as follows: _VP ≦ R · f · (1−a / 100 ). In practice, it is possible to simplify the strict calculation of R and calculate the processing line width as R.

The displacement sensor 116 is a four-division photodiode, receives the reflected light of the laser light emitted from the laser 115 to the elastic body 109, converts the reflected light into an electric signal, and outputs the electric signal to the displacement detection circuit 102. The displacement detection circuit 102 detects the input electric signal as the displacement amount of the probe 110 and outputs it to the interval control amount calculation circuit 103.

The signal waveform input from the displacement detection circuit 102 is obtained by adding the influence of the contact between the probe 110 and the sample 112 to the vibration caused by the vibration. The amplitude is detected, a control amount for making the amplitude constant is calculated, and the calculated control amount is output to the Z control circuit 105.
The Z control circuit 105 drives the Z drive stage 107 using the input control amount, and controls the distance between the probe 110 and the sample 112 to be constant.

Next, an example of a processing method using the apparatus having the configuration described above will be described. First, as the probe 111, an elastic body 109 and a probe 110, both made of Si,
It is formed by a semiconductor process, and Pt is deposited to a thickness of 50 nm on the surface and used to add conductivity. Sample 11
As No. 2, a 4 nm Ti film is formed on a surface of an insulating Si substrate having a thermal oxide film having a thickness of about 500 nm on the surface by high frequency sputtering. The scanning speed at the time of processing uses R = 30 nm from an empirical line width, f = 100 kHz, a = 50%, and V _P = 1.5 mm / s from the above-mentioned calculation formula.

According to the processing pattern 601 shown in FIG. 6, scanning is performed at a speed V _P = 1.5 mm / s. During scanning, by applying a DC voltage of 4 V between the probe 110 and the sample 112, the Ti layer on the surface of the sample 112 is anodized, and a continuous insulating film having a shape of a processing pattern 601 and having a width of about 30 nm. A part is formed. Note that the displacement amount of the probe 110 may be detected by other displacement detecting means such as a heterodyne method. Further, in the present embodiment, voltage application is used as a processing physical quantity, and an application example of an anodization method is particularly shown. However, other processing methods using voltage application, such as dielectric breakdown, may be used. The present invention is also applicable to a processing apparatus that applies other physical quantities such as a magnetic field.

[Embodiment 2] FIG. 3 shows the configuration of a processing apparatus using a scanning probe according to Embodiment 2 of the present invention. First, the device of the present embodiment and its operation will be described. As shown in FIG. 3, the elastic body 109 having conductivity and the probe 1
A probe 111 made of 10 is arranged so as to face the surface of the sample 112. The probe 111 is attached to a vibration actuator 114, and the sample 112 is attached to a z-drive stage 107.
Is attached to the xy drive stage 108. The vibration circuit 101 drives the vibration actuator 114 at a preset frequency and amplitude, and vibrates the probe 111. As a result, the probe 110 comes into contact with the sample 112 so as to strike the surface.

The scanning amount instructing circuit 104 outputs a scanning control amount to the xy control circuit 106 in accordance with a previously prepared processing pattern and a scanning speed. The xy control circuit 106 controls the xy drive stage 108 according to the instructed control amount, and relatively scans the probe 110 and the sample 112. During scanning, the voltage application circuit 113 applies a voltage between the probe 110 and the sample 112 to process the surface of the sample 112. The processing pattern can be appropriately determined in a desired shape, and the scanning speed is determined as follows.

In FIG. 4, it is assumed that the probe 110 and the sample 112 are in contact with each other in a linear probe contact section 205 in the probe tip trajectory 204, and processing is performed in this state. Probe 11
Considering the case where the distance between 0 and the sample 112 is increased and the limit of contact between them, that is, the case where the probe contact section 205 has a point shape, and the size of the portion to be processed at this time is a diameter R, the adjacent portions are adjacent. If the interval between the probe contact sections 205 is within R, the processed portion is continuous and can be processed in a linear shape. Assuming that the excitation frequency of the excitation circuit 101 is f, the maximum value of the scanning speed for performing such linear processing is _VP-max, and _VP-max = R · f. In order to further ensure the processing, if the overlapping ratio between adjacent processed portions is set to a% in the scanning direction, the processing speed _VP is as follows: _VP ≦ R · f · (1−a / 100 ). In practice, it is possible to simplify the strict calculation of R and calculate the processing line width as R.

The current detection circuit 301 detects the value of the current flowing between the probe 110 and the sample 112 and outputs the value to the interval control amount calculation circuit 103. The displacement sensor 116 is a four-divided photodiode, receives the reflected light of the laser light emitted from the laser 115 to the elastic body 109, converts the reflected light into an electric signal, and outputs the electric signal to the displacement detection circuit 102. Displacement detection circuit 10
2 detects the input electric signal as the displacement amount of the probe 110 and outputs it to the interval control amount calculation circuit 103.

FIG. 5 is a diagram in which the scanning is performed while increasing the distance between the probe 110 and the sample 112 from the state shown in FIG.
The length of the probe contact section 205 in each figure is d
₁ and d ₂ , d ₁ > d ₂ , and the probe 110 and the sample 1
It can be seen that if the scanning speed is kept constant by increasing the interval between the two, the contact time between them becomes shorter. That is, by controlling the distance between the two, it is possible to control the amount of charge applied by processing per fixed time.

The interval control amount calculation circuit 103 integrates the input value from the current detection circuit 301 for a certain period of time, calculates a control amount for making this constant, and outputs the calculated control amount to the Z control circuit 105. The Z control circuit uses the input control amount to control the Z drive stage 1
07 is driven to control the input charge amount between the probe 110 and the sample 112 per fixed time to be constant. Such a control method is used, for example, when the resistance value between the probe 110 and the sample 112 is unstable during processing, such as processing on a surface damaged by a previous semiconductor process or processing of a metal that is easily oxidized. It is particularly suitable for

The signal waveform input from the displacement detection circuit 102 is changed by the vibration caused by the vibration to the probe 110 and the sample 11.
2, the interval control amount calculation circuit 103 detects the amplitude of the signal waveform, and when it reaches a predetermined constant value, calculates a control amount for making this constant. The signal output to the Z control circuit 105 is switched to this. The Z control circuit 105 drives the Z drive stage 107 using the input control amount, and
The distance between 10 and the sample 112 is controlled to be constant. By using such a control method, damage to the probe 110 can be prevented even when processing is performed across an insulating portion, for example, when processing patterns cross or when an electrode pattern is formed in a previous process. Can be prevented.

Next, an example of a processing method using the apparatus having the configuration described above will be described. First, as the probe 111, an elastic body 109 and a probe 110, both made of Si,
It is formed by a semiconductor process, and Pt is deposited to a thickness of 50 nm on the surface and used to add conductivity. Sample 11
2, here, on a Si substrate surface having an insulating surface with a thermal oxide film having a thickness of about 500 nm on the surface,
A 4 nm-thick Ti film is formed by a high frequency sputtering method, and an insulating portion is formed by photolithography processing, leaving the electrode 701 shown in FIG.

The scanning speed at the time of processing is determined by R from the empirical line width.
= 30 nm, f = 100 kHz, a = 50%, and V _P = 1.5 mm / s from the above formula. Since the response frequency of the control system used is 4 kHz, the integration time of the interval control amount calculation circuit 103 with respect to the input value from the current detection circuit 301 is set to 0.25.
ms. This is the time for integrating the input charge amount during the past 25 contacts.

Scanning is performed at a speed V _P = 1.5 mm / s according to a processing pattern 601 shown in FIG. During scanning, by applying a DC voltage of 4 V between the probe 110 and the electrode 701, the Ti layer on the surface of the electrode 701 is anodized, and a continuous insulating portion having a width of about 30 nm crossing the electrode 701 is formed.
The book is formed. In addition, in detecting the displacement amount of the probe 110,
Of course, other displacement detecting means such as a heterodyne method may be used. In this embodiment, the application of voltage is used as the processing physical quantity, and an application example of the anodic oxidation method is particularly shown. However, another processing method using voltage application such as dielectric breakdown may be used. The present invention is also applicable to a processing device that applies other physical quantities such as.

[0029]

As described above, according to the present invention, it is possible to carry out processing with a simple structure with less damage to the probe, and to obtain a resistance value between the probe and the sample during the processing. A processing device and a processing method using a scanning probe that can perform stable processing even when the value changes, and can prevent damage to the probe even when processing a sample including a part where the input physical quantity cannot be detected. can do.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a configuration of a processing apparatus using a scanning probe according to a first embodiment of the present invention.

FIG. 2 is a diagram for explaining the operation of the device according to the first embodiment of the present invention.

FIG. 3 is a diagram illustrating a configuration of a processing apparatus using a scanning probe according to a second embodiment of the present invention.

FIG. 4 is a diagram for explaining the operation of the device according to the second embodiment of the present invention.

FIG. 5 is a diagram for explaining another operation of the device according to the second embodiment of the present invention.

FIG. 6 is a diagram illustrating an application example according to the first embodiment of the present invention.

FIG. 7 is a diagram illustrating an application example according to the second embodiment of the present invention.

[Explanation of symbols]

 101: Exciting circuit 102: Displacement detecting circuit 103: Interval control amount calculating circuit 104: Scanning amount instruction circuit 105: Z control circuit 106: xy control circuit 107: z drive stage 108: xy drive stage 109: elastic body 110: search Needle 111: Probe 112: Sample 113: Voltage application circuit 114: Vibration actuator 115: Laser 116: Displacement sensor 201: Vibration direction 202: Scanning direction 203: Interval control direction 204: Probe tip trajectory 205: Probe contact section 301: current detection circuit 601: processing pattern 701: electrode

Claims (20)

[Claims] 1. A processing apparatus using a scanning probe for processing a sample by relatively scanning a sample at a predetermined scanning speed on a probe according to a processing pattern, comprising: a vibration means for vibrating the probe; An interval control unit for controlling an interval between the probe and the sample, and a processing physical quantity applying unit for applying a processing physical quantity between the probe and the sample, wherein the probe is caused by the vibration on the surface of the sample. Controlling the interval between the probe and the sample so as to make intermittent contact,
A processing apparatus using a scanning probe, wherein the processing physical quantity is continuously applied between the probe and the sample to perform processing. 2. The apparatus according to claim 1, further comprising scanning speed calculating means for calculating the scanning speed using the frequency of the vibration and the processing size. 3. The scanning speed calculating means, wherein the size of a portion to be processed of the sample at a limit point where the probe and the sample come into contact is a diameter R, and the frequency of the vibration is f, The processing apparatus according to claim 2, wherein the maximum value _{VP-max of the} speed is configured to satisfy the following conditional expression. V _P-max = R · f 4. The scanning speed calculating means sets a size of a portion to be processed of the sample to a diameter R, sets a frequency of the vibration to f, and sets an overlapping ratio between adjacent portions to be processed to a length in a scanning direction. when the a% Te, the scanning speed V _P is, the processing apparatus using a scanning probe according to claim 2, characterized in that it is configured to satisfy the following conditional expression. V _P ≦ R · f · (1-a / 100) 5. An input physical quantity detection means for detecting a physical quantity input to processing by application of said processing physical quantity application means, and said probe based on a physical quantity detected by said input physical quantity detection means. The processing apparatus according to any one of claims 1 to 4, further comprising an interval control amount calculating unit that calculates an interval control amount between the sample and the sample. 6. An interval detecting means for detecting an interval between the probe and the sample, and an interval control between the probe and the sample based on the distance detected by the interval detecting means. An interval control amount calculating means for calculating an amount, and an interval control amount switching means for switching a control amount used for the interval control to another control amount when the distance becomes equal to or less than a predetermined value. Item 5. A processing apparatus using the scanning probe according to any one of Items 1 to 4. 7. The processing apparatus using a scanning probe according to claim 1, wherein the processing physical quantity applying means is a voltage applying means. 8. The processing apparatus according to claim 1, wherein the processing physical quantity applying means is a physical quantity applying means such as near-field light or a magnetic field. 9. The apparatus according to claim 1, wherein said input physical quantity detecting means is a current detecting means. 10. The processing apparatus according to claim 1, wherein the processing is performed by anodic oxidation. 11. A processing method using a scanning probe for processing a sample by relatively scanning a sample at a predetermined scanning speed on a sample according to a processing pattern, wherein the probe is caused to oscillate on the surface of the sample by the vibration. Controlling the interval between the probe and the sample so as to make intermittent contact,
A processing method using a scanning probe, wherein the processing is performed by continuously applying the processing physical quantity in a state where these are intermittently contacted. 12. The apparatus according to claim 1, wherein the scanning speed is calculated using a frequency of the vibration and a processing size.
A processing method using the scanning probe according to 1. 13. The scanning speed calculation, wherein the size of a portion to be processed of the sample at a limit point where the probe and the sample come into contact is a diameter R, and the frequency of the vibration is f. 13. The processing method using a scanning probe according to claim 12, wherein the maximum value _VP-max is set so as to satisfy the following conditional expression. V _P-max = R · f 14. The method according to claim 1, wherein the scanning speed calculation is performed by setting a size of a portion to be processed of the sample to a diameter R, setting a frequency of the vibration to f, and setting an overlapping ratio of the adjacent portions to be processed to a length in a scanning direction. when the a%, the scanning speed V _P is a processing method using a scanning probe according to claim 12, characterized in that it is carried out so as to satisfy the following conditional expression. V _P ≦ R · f · (1-a / 100) 15. The control of the distance includes detecting a physical quantity input to the processing by applying the processing physical quantity applying means, and calculating a distance control amount between the probe and the sample based on the detected physical quantity. 2. The method according to claim 1, wherein
A processing method using the scanning probe according to any one of 1 to 14. 16. The distance control detects a distance between the probe and the sample, and calculates a distance control amount between the probe and the sample based on the detected distance to calculate the distance. The control amount used for the interval control is switched to another control amount when is smaller than or equal to a certain value.
A processing method using the scanning probe according to any one of 1 to 14. 17. The method according to claim 11, wherein a voltage is applied as the application of the processing physical quantity.
A processing method using the scanning probe described in the paragraph. 18. The processing method using a scanning probe according to claim 11, wherein a physical quantity such as near-field light or a magnetic field is applied as the application of the processing physical quantity. 19. The apparatus according to claim 11, wherein said detected physical quantity is a current value.
A processing method using the scanning probe described in the paragraph. 20. The processing method using a scanning probe according to claim 11, wherein the processing is performed by anodic oxidation.