JP2002203843A - Plasma processing method and apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma processing method and apparatus in which plasma is hardly spread to a region downstream of a substrate electrode, power efficiency is high, and maintenance work can be reduced. SOLUTION: A high frequency power supply for an antenna is performed while a predetermined gas is introduced from a gas supply device 2 into a vacuum vessel 1 and exhausted by a pump 3 as an exhaust device, and the inside of the vacuum vessel 1 is maintained at a predetermined pressure. An antenna 5 protruding into the vacuum vessel 1 with a high frequency power of 100 MHz by the
, Plasma is generated in the vacuum chamber 1. The vacuum vessel 1 is grounded, and the vacuum vessel 1 is
Are separated into a side with the substrate 7 and a side without the substrate 7 (hatched portion in FIG. 1).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a plasma processing method and apparatus used for manufacturing electronic devices such as semiconductors and micromachines.

[0002]

2. Description of the Related Art In the manufacture of electronic devices such as semiconductors and micromachines, the importance of thin film processing technology by plasma processing has been increasing more and more in recent years.

Hereinafter, as an example of a conventional plasma processing method, a plasma processing using a patch antenna type plasma source will be described with reference to FIG. In FIG.
While introducing a predetermined gas from the gas supply device 2 into the vacuum vessel 1, the gas is evacuated by the turbo-molecular pump 3 as an exhaust device. By supplying high-frequency power of 100 MHz to the antenna 5 protruding into the vacuum vessel 1, plasma is generated in the vacuum vessel 1 and plasma processing is performed on the substrate 7 placed on the substrate electrode 6. It can be carried out. Further, a high-frequency power supply 8 for the substrate electrode for supplying high-frequency power to the substrate electrode 6 is provided, so that the ion energy reaching the substrate 7 can be controlled. The high-frequency voltage supplied to the antenna 5 is supplied to the vicinity of the center of the antenna 5 by the power supply rod 9. Further, a plurality of portions different from the center and the periphery of the antenna 5 and the surface 1 ′ of the vacuum vessel 1 facing the substrate 7 are short-circuited by the short pins 10. A dielectric plate 11 is sandwiched between the antenna 5 and the vacuum vessel 1, and a feed rod 9 is provided.
The short pin 10 connects the antenna 5 and the high-frequency power source 4 for the antenna, and connects the antenna 5 and the vacuum vessel 1 ′ via through holes provided in the dielectric plate 11. The surface of the antenna 5 is covered by a cover 12. A groove-shaped space between the dielectric plate 11 and a dielectric ring 13 provided around the dielectric plate 11;
There is provided a plasma trap 15 comprising a groove-like space between the antenna ring and a conductor ring 14 provided on the periphery of the antenna 5.

[0004] The turbo molecular pump 3 and the exhaust port 16 are arranged directly below the substrate electrode 6. A pressure regulating valve 17 for controlling the vacuum vessel 1 to a predetermined pressure is connected to the substrate electrode 6.
And a lift valve located immediately below the turbo molecular pump 3. Further, the inner wall surface of the vacuum vessel 1 is covered by the inner chamber 18 to prevent the vacuum vessel 1 from being stained by the plasma processing. Predetermined number of substrates 7
After the processing, the dirty inner chamber 18 is replaced with a rotation part so that the maintenance work can be promptly performed.

[0005]

However, in the plasma processing described in the conventional example, there is a problem that the plasma spreads downstream of the substrate electrode 6 (hatched portion in FIG. 9) depending on the processing conditions.

[0006] Since the plasma spread to the downstream is completely unnecessary for processing the substrate 7, the processing efficiency is deteriorated with respect to the power supplied to the vacuum vessel 1 as a processing chamber. In addition, the contamination of the vacuum vessel 1 due to the processing also spreads downstream, resulting in an increase in maintenance work.

The present invention has been made in view of the above-mentioned conventional problems, and provides a plasma processing method and apparatus in which plasma does not easily spread to a region downstream of a substrate electrode, power efficiency is high, and maintenance work can be reduced. It is intended to be.

[0008]

According to a first aspect of the present invention, there is provided a plasma processing method, wherein the inside of a vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the inside of the vacuum vessel is controlled to a predetermined pressure.
Plasma processing in which plasma is generated in a vacuum container by applying high-frequency power having a frequency of 100 kHz to 3 GHz to an antenna provided opposite to a substrate placed on a substrate electrode in the vacuum container to process the substrate. A method in which a vacuum vessel is grounded, and a vacuum vessel is separated into a side without a substrate and a side without a substrate by a punched metal or a conductive mesh whose outer peripheral portion is substantially grounded. Is characterized in that the substrate is processed in a state where it does not go around.

In the plasma processing method according to the second aspect of the present invention, the inside of the vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the vacuum vessel is mounted on the substrate electrode in the vacuum vessel while controlling the pressure to a predetermined pressure. By applying high-frequency power having a frequency of 100 kHz to 3 GHz to an antenna provided to face the placed substrate, plasma is generated in the vacuum vessel,
A plasma processing method for processing a substrate, wherein the vacuum vessel is grounded, and the vacuum vessel is separated into a side with a substrate and a side without a substrate by a radio wave absorber provided with a number of holes, and a side without a substrate. The method is characterized in that the substrate is processed in a state where the plasma does not flow around the substrate.

The plasma processing method according to the first or second aspect of the present invention is effective even when a dielectric plate is sandwiched between an antenna and a vacuum container, and the antenna and the dielectric plate have a structure protruding into the vacuum container. It is a way.

In this case, preferably, a high-frequency voltage is supplied to the antenna through a through hole provided near the center of the dielectric plate, and the antenna is provided at a position different from the center and the periphery of the dielectric plate, and It is desirable that the antenna and the vacuum vessel be short-circuited by a short pin via a through-hole that is arranged approximately equally to the center of the antenna.

Preferably, the substrate is processed in a state where the plasma distribution on the substrate is controlled by an annular groove-shaped plasma trap provided between the antenna and the vacuum vessel.

In the plasma processing method according to the first or second aspect of the present invention, preferably, a turbo-molecular pump for evacuating the vacuum vessel is disposed immediately below the substrate electrode.
In addition, it is desirable that the exhaust port is located on the side of the vacuum container separated into two regions where no substrate is provided.

In this case, preferably, the pressure regulating valve for controlling the vacuum vessel to a predetermined pressure is an elevating valve located immediately below the substrate electrode and immediately above the turbo molecular pump. It is desirable that the pressure regulating valve be located on the side of the vacuum container separated into regions where no substrate is provided.

The plasma processing method according to the first or second aspect of the present invention is particularly effective when the pressure on one side of the substrate of the vacuum vessel separated into two regions is 10 Pa or less.

Further, this method is particularly effective when the pressure on one side of the substrate of the vacuum vessel separated into two regions is 1 Pa or less.

This is a particularly effective method when the frequency of the high-frequency power applied to the antenna is 50 MHz to 3 GHz.

In the plasma processing method of the first invention of the present application, preferably, a punching hole pitch or a mesh pitch of a punching metal or a conductive mesh is p, a frequency of a high frequency power applied to the antenna is f, and a light speed is c. , P <0.002 × c / f.

More preferably, if the punching hole pitch or mesh pitch of the punched metal or conductor mesh is p, the frequency of the high-frequency power applied to the antenna is f, and the light speed is c, p <0.0005 × c / It is desirable to satisfy the relational expression f.

In the plasma processing method according to the second aspect of the present invention, preferably, the pitch of the holes provided in the radio wave absorber is p, the frequency of the high-frequency power applied to the antenna is f, and the speed of light is c. It is desirable to satisfy the relational expression of <0.02 × c / f.

More preferably, if the pitch of the holes provided in the radio wave absorber is p, the frequency of the high-frequency power applied to the antenna is f, and the speed of light is c, p <0.005 × c / f. It is desirable to satisfy the relational expression.

In the plasma processing method according to the first or second aspect of the present invention, preferably, the inner wall of the vacuum chamber is covered by the inner chamber, and the vacuum chamber is separated into two regions from the opening of the inner chamber. It is desirable to ground the downstream side from the opening of the inner chamber so that the electromagnetic wave does not leak to the side of the container where the substrate does not exist.

A plasma processing apparatus according to a third aspect of the present invention includes a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and A pressure regulating valve for controlling the pressure of the substrate, a substrate electrode for placing the substrate in the vacuum vessel, an antenna provided opposite to the substrate electrode, and a frequency of 100
A plasma processing apparatus comprising: a high-frequency power supply capable of supplying a high-frequency power of kHz to 3 GHz, wherein the vacuum vessel is grounded and a punched metal or a conductive mesh whose outer peripheral portion is substantially grounded is provided. Are separated into a side with a substrate and a side without a substrate.

A plasma processing apparatus according to a fourth aspect of the present invention includes a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and A pressure regulating valve for controlling the pressure of the substrate, a substrate electrode for placing the substrate in the vacuum vessel, an antenna provided opposite to the substrate electrode, and a frequency of 100
A plasma processing apparatus comprising: a high-frequency power supply capable of supplying high-frequency power of kHz to 3 GHz, wherein the vacuum vessel is grounded, and the vacuum vessel has a substrate by a radio wave absorber provided with a number of holes. It is characterized in that it is separated into a side and a side without a substrate.

The plasma processing apparatus according to the third or fourth aspect of the present invention is effective even when a dielectric plate is sandwiched between an antenna and a vacuum container, and the antenna and the dielectric plate have a structure protruding into the vacuum container. Device.

In this case, preferably, a high-frequency voltage is supplied to the antenna through a through hole provided near the center of the dielectric plate, and the antenna is provided at a part different from the center and the periphery of the dielectric plate; It is desirable that the antenna and the vacuum vessel be short-circuited by a short pin via a through-hole that is arranged approximately equally to the center of the antenna.

Preferably, an annular and groove-shaped plasma trap provided between the antenna and the vacuum vessel is provided.

In the plasma processing apparatus according to the third or fourth aspect of the present invention, preferably, a turbo-molecular pump for evacuating the vacuum vessel is disposed immediately below the substrate electrode.
In addition, it is desirable that the exhaust port is located on the side of the vacuum container separated into two regions where no substrate is provided.

In this case, preferably, the pressure regulating valve for controlling the vacuum vessel to a predetermined pressure is an elevating valve located immediately below the substrate electrode and immediately above the turbo molecular pump. It is desirable that the pressure regulating valve be located on the side of the vacuum container separated into regions where no substrate is provided.

In the plasma processing apparatus according to the third or fourth aspect of the present invention, the frequency of the high-frequency power applied to the antenna is 5
This is a particularly effective device when the frequency is from 0 MHz to 3 GHz.

In the plasma processing apparatus according to the third aspect of the present invention, preferably, the punching hole pitch or the mesh pitch of the punching metal or the conductor mesh is p, the frequency of the high-frequency power applied to the antenna is f, and the light speed is c. , P <0.002 × c / f.

Further, preferably, when the punching hole pitch or mesh pitch of the punching metal or the conductor mesh is p, the frequency of the high-frequency power applied to the antenna is f, and the light speed is c, p <0.0005 × c / It is desirable to satisfy the relational expression f.

In the plasma processing apparatus according to the fourth aspect of the present invention, preferably, the pitch of the holes provided in the radio wave absorber is p, the frequency of the high-frequency power applied to the antenna is f, and the speed of light is c. It is desirable to satisfy the relational expression of <0.02 × c / f.

More preferably, when the pitch of the holes provided in the radio wave absorber is p, the frequency of the high-frequency power applied to the antenna is f, and the speed of light is c, p <0.005 × c / f. It is desirable to satisfy the relational expression.

In the plasma processing apparatus according to the third or fourth aspect of the present invention, preferably, the inner wall of the vacuum chamber is covered by the inner chamber, and the vacuum chamber is separated into two regions from the opening of the inner chamber. It is desirable to ground the downstream side from the opening of the inner chamber so that the electromagnetic wave does not leak to the side of the container where the substrate does not exist.

In the plasma processing method according to the fifth invention of the present application, the inside of the vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the vacuum vessel is mounted on the substrate electrode in the vacuum vessel while controlling the pressure in the vacuum vessel to a predetermined pressure. By applying high-frequency power having a frequency of 100 kHz to 3 GHz to an antenna provided to face the placed substrate, plasma is generated in the vacuum vessel,
A plasma processing method for processing a substrate, wherein the vacuum container is grounded, and the outer periphery is substantially completely grounded. The method is characterized in that the substrate is processed in a state where the plasma does not flow to the side.

The plasma processing method of the fifth invention of the present application is an effective method even when a dielectric plate is sandwiched between an antenna and a vacuum vessel, and the antenna and the dielectric plate have a structure protruding into the vacuum vessel. is there.

In this case, preferably, a high-frequency voltage is supplied to the antenna through a through hole provided near the center of the dielectric plate, and the antenna is provided at a position different from the center and the periphery of the dielectric plate, and It is desirable that the antenna and the vacuum vessel be short-circuited by a short pin via a through-hole that is arranged approximately equally to the center of the antenna.

Preferably, the substrate is processed in a state in which the plasma distribution on the substrate is controlled by an annular and groove-shaped plasma trap provided between the antenna and the vacuum vessel.

In the plasma processing method according to the fifth aspect of the present invention, preferably, a turbo-molecular pump for evacuating the vacuum vessel is disposed immediately below the substrate electrode, and is separated into two regions. It is desirable that the exhaust port is located on the side of the container without the substrate.

In this case, preferably, the pressure regulating valve for controlling the vacuum vessel to a predetermined pressure is an elevating valve located immediately below the substrate electrode and immediately above the turbo molecular pump. It is desirable that the pressure regulating valve be located on the side of the vacuum container separated into regions where no substrate is provided.

The plasma processing method of the fifth invention of the present application
This is a particularly effective method when the pressure on one side of the substrate of the vacuum vessel separated into two regions is 10 Pa or less.

This is a particularly effective method when the pressure on one side of the substrate of the vacuum vessel separated into two regions is 1 Pa or less.

This is a particularly effective method when the frequency of the high-frequency power applied to the antenna is 50 MHz to 3 GHz.

In the plasma processing method of the fifth invention of the present application, preferably, when the hole pitch of the porous conductor is p, the frequency of the high-frequency power applied to the antenna is f, and the light speed is c, p <0.002 × It is desirable to satisfy the relational expression of c / f.

Further, preferably, when the hole pitch of the porous conductor is p, the frequency of the high-frequency power applied to the antenna is f, and the speed of light is c, the relational expression of p <0.0005 × c / f is satisfied. Is desirable.

In the plasma processing method according to the fifth aspect of the present invention, preferably, the inner wall surface of the vacuum chamber is covered by the inner chamber, and the substrate of the vacuum chamber separated into two regions from the opening of the inner chamber. It is desirable to ground the downstream side from the opening of the inner chamber so that the electromagnetic wave does not leak to the side where there is no gap.

The plasma processing apparatus according to the sixth aspect of the present invention includes a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and A pressure regulating valve for controlling the pressure of the substrate, a substrate electrode for placing the substrate in the vacuum vessel, an antenna provided opposite to the substrate electrode, and a frequency of 100
A plasma processing apparatus comprising: a high-frequency power supply capable of supplying a high-frequency power of kHz to 3 GHz, wherein the vacuum container is grounded, and the entire outer peripheral portion is grounded by a porous conductor. It is characterized in that it is separated into a certain side and a side without a substrate.

The plasma processing apparatus according to the sixth aspect of the present invention is an apparatus effective even when a dielectric plate is sandwiched between an antenna and a vacuum vessel, and the antenna and the dielectric plate have a structure protruding into the vacuum vessel. is there.

In this case, preferably, a high-frequency voltage is supplied to the antenna through a through hole provided near the center of the dielectric plate, and the antenna is provided at a position different from both the center and the periphery of the dielectric plate. It is desirable that the antenna and the vacuum vessel be short-circuited by a short pin via a through-hole that is arranged approximately equally to the center of the antenna.

Preferably, an annular and groove-shaped plasma trap provided between the antenna and the vacuum vessel is provided.

In the plasma processing apparatus according to the sixth aspect of the present invention, preferably, a turbo-molecular pump for evacuating the vacuum vessel is disposed immediately below the substrate electrode, and is separated into two regions. It is desirable that the exhaust port is located on the side of the container without the substrate.

In this case, preferably, the pressure regulating valve for controlling the vacuum vessel to a predetermined pressure is an elevating valve located immediately below the substrate electrode and immediately above the turbo molecular pump. It is desirable that the pressure regulating valve be located on the side of the vacuum container separated into regions where no substrate is provided.

The plasma processing apparatus according to the sixth aspect of the present invention is particularly effective when the frequency of the high-frequency power applied to the antenna is 50 MHz to 3 GHz.

In the plasma processing apparatus according to the sixth aspect of the present invention, preferably, when the hole pitch of the porous conductor is p, the frequency of the high-frequency power applied to the antenna is f, and the light speed is c, p <0.002 × It is desirable to satisfy the relational expression of c / f.

Further, preferably, when the hole pitch of the porous conductor is p, the frequency of the high-frequency power applied to the antenna is f, and the light speed is c, the relational expression of p <0.0005 × c / f is satisfied. Is desirable.

In the plasma processing apparatus according to the sixth aspect of the present invention, preferably, the inner wall of the vacuum chamber is covered with the inner chamber, and the substrate of the vacuum chamber is separated into two regions from the opening of the inner chamber. It is desirable to ground the downstream side from the opening of the inner chamber so that the electromagnetic wave does not leak to the side where there is no gap.

In the plasma processing method according to the seventh aspect of the present invention, the gas inside the vacuum vessel is evacuated while supplying gas to the grounded vacuum vessel, and the pressure inside the vacuum vessel is controlled to a predetermined pressure. A plasma processing method for generating plasma in a vacuum vessel by applying high-frequency power having a frequency of 100 kHz to 3 GHz to an antenna provided to face a substrate mounted on an electrode and processing the substrate, A vacuum vessel is separated into a side with a substrate and a side without a substrate by a plurality of layers of porous conductors, almost all of the outer periphery of which is grounded, and the substrate is processed in a state where plasma does not flow around to the side without the substrate. Features.

In the plasma processing method according to the seventh aspect of the present invention, preferably, a turbo molecular pump for evacuating the vacuum vessel is disposed immediately below the substrate electrode, and the vacuum molecular pump is separated into two regions. It is desirable that the exhaust port is located on the side of the container without the substrate.

In this case, preferably, the pressure regulating valve for controlling the vacuum vessel to a predetermined pressure is an elevating valve located immediately below the substrate electrode and immediately above the turbo molecular pump. It is desirable that the pressure regulating valve be located on the side of the vacuum container separated into regions where no substrate is provided.

The plasma processing method of the seventh invention of the present application
This is a particularly effective method when the pressure on one side of the substrate of the vacuum vessel separated into two regions is 10 Pa or less.

This is a particularly effective method when the frequency of the high-frequency power applied to the antenna is 50 MHz to 3 GHz.

In the plasma processing method according to the seventh aspect of the present invention, preferably, the inner wall surface of the vacuum vessel is covered by the inner chamber, and the substrate of the vacuum vessel is separated into two regions from the opening of the inner chamber. It is desirable to ground the downstream side from the opening of the inner chamber so that the electromagnetic wave does not leak to the side where there is no gap.

Preferably, the distance between the porous conductors of the plurality of layers is 3 mm to 20 mm.

Preferably, the aperture ratio of each of the plurality of layers of the porous conductor is 50% or more.

The plasma processing method according to the eighth aspect of the present invention is a method of evacuating a vacuum vessel while supplying gas to a grounded vacuum vessel, and controlling the substrate electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. A plasma processing method for generating plasma in a vacuum vessel and processing a substrate by applying high-frequency power having a frequency of 100 kHz to 3 GHz to an antenna provided opposite to a substrate mounted on the substrate, comprising: The vacuum vessel is separated into the side with the substrate and the side without the substrate by the porous conductor whose whole part is grounded and the porous electromagnetic wave absorber, and the substrate is processed in a state where the plasma does not flow around to the side without the substrate. It is characterized by the following.

In the plasma processing method according to the eighth aspect of the present invention, preferably, the porous conductor is divided into two regions, and the porous electromagnetic wave absorber is divided into two regions. It is desirable to face the side of the vacuum vessel without the substrate.

Preferably, a turbo molecular pump for evacuating the vacuum vessel is disposed immediately below the substrate electrode, and is evacuated to the side of the vacuum vessel separated into two regions where no substrate is provided. Desirably the mouth is located.

In this case, preferably, the pressure regulating valve for controlling the vacuum vessel to a predetermined pressure is an elevating valve located immediately below the substrate electrode and immediately above the turbo molecular pump. It is desirable that the pressure regulating valve be located on the side of the vacuum container separated into regions where no substrate is provided.

The plasma processing method according to the eighth aspect of the present invention
This is a particularly effective method when the pressure on one side of the substrate of the vacuum vessel separated into two regions is 10 Pa or less.

This is a particularly effective method when the frequency of the high-frequency power applied to the antenna is 50 MHz to 3 GHz.

In the plasma processing method according to the eighth aspect of the present invention, preferably, the inner wall of the vacuum chamber is covered with the inner chamber, and the substrate of the vacuum chamber is separated into two regions from the opening of the inner chamber. It is desirable to ground the downstream side from the opening of the inner chamber so that the electromagnetic wave does not leak to the side where there is no gap.

Preferably, the distance between the porous conductor and the porous electromagnetic wave absorber is 3 mm to 20 mm.

Preferably, the aperture ratios of the porous conductor and the radio wave absorber are each 50% or more.

The plasma processing apparatus according to the ninth aspect of the present invention includes a grounded vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a vacuum container. Pressure regulating valve for controlling the inside pressure to a predetermined pressure, a substrate electrode for placing the substrate in a vacuum vessel, an antenna provided opposite to the substrate electrode, and a high-frequency power of 100 kHz to 3 GHz applied to the antenna And a high-frequency power supply capable of supplying a vacuum container, wherein a vacuum vessel is separated into a side with a substrate and a side without a substrate by a plurality of layers of porous conductors whose outer peripheral portions are almost all grounded. It is characterized by having.

In the plasma processing apparatus according to the ninth aspect of the present invention, preferably, a turbo molecular pump for evacuating the vacuum vessel is disposed immediately below the substrate electrode, and the vacuum molecular pump is separated into two regions. It is desirable that the exhaust port is located on the side of the container without the substrate.

In this case, preferably, the pressure regulating valve for controlling the vacuum vessel to a predetermined pressure is an elevating valve located immediately below the substrate electrode and immediately above the turbo molecular pump. It is desirable that the pressure regulating valve be located on the side of the vacuum container separated into regions where no substrate is provided.

The plasma processing apparatus according to the ninth aspect of the present invention is particularly effective when the frequency of the high frequency power applied to the antenna is 50 MHz to 3 GHz.

In the plasma processing apparatus according to the ninth aspect of the present invention, preferably, the inner wall surface of the vacuum chamber is covered by the inner chamber, and the substrate of the vacuum chamber separated into two regions from the opening of the inner chamber. It is desirable to ground the downstream side from the opening of the inner chamber so that the electromagnetic wave does not leak to the side where there is no gap.

Preferably, the distance between a plurality of layers of porous conductors is 3 mm to 20 mm.

Preferably, the aperture ratio of each of the plurality of layers of the porous conductor is 50% or more.

The plasma processing apparatus according to the tenth aspect of the present invention
Grounded vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a pressure regulating valve for controlling the inside of the vacuum container to a predetermined pressure, A substrate electrode for placing the substrate in a vacuum vessel,
What is claimed is: 1. A plasma processing apparatus comprising: an antenna provided to face a substrate electrode; and a high-frequency power supply capable of supplying high-frequency power having a frequency of 100 kHz to 3 GHz to the antenna. Conductor and
The vacuum vessel is separated into a side with the substrate and a side without the substrate by the porous electromagnetic wave absorber.

In the plasma processing apparatus according to the tenth aspect of the present invention, preferably, the porous conductor is divided into two regions, and the porous radio wave absorber is divided into two regions. It is desirable to face the side of the vacuum vessel without the substrate.

In the plasma processing apparatus according to the tenth aspect of the present invention, preferably, a turbo-molecular pump for evacuating the vacuum vessel is disposed directly below the substrate electrode, and
It is desirable that the exhaust port is located on the side of the vacuum vessel separated into two regions without the substrate.

In this case, preferably, the pressure regulating valve for controlling the vacuum vessel to a predetermined pressure is an elevating valve located immediately below the substrate electrode and immediately above the turbo molecular pump. It is desirable that the pressure regulating valve be located on the side of the vacuum container separated into regions where no substrate is provided.

This is a particularly effective method when the frequency of the high-frequency power applied to the antenna is 50 MHz to 3 GHz.

In the plasma processing apparatus according to the tenth aspect of the present invention, preferably, the inner wall of the vacuum chamber is covered with the inner chamber, and the inner wall of the vacuum chamber is opened from the opening of the inner chamber.
It is desirable to ground the downstream side from the opening of the inner chamber so that the electromagnetic wave does not leak to the side of the vacuum vessel separated into two regions without the substrate.

Preferably, the distance between the porous conductor and the porous electromagnetic wave absorber is 3 mm to 20 mm.

Preferably, the aperture ratio of each of the porous conductor and the porous electromagnetic wave absorber is 50% or more.

[0090]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of the present invention will be described with reference to FIGS.

FIG. 1 is a sectional view of a plasma processing apparatus used in the first embodiment of the present invention. In FIG.
While introducing a predetermined gas from the gas supply device 2 into the vacuum vessel 1, the gas is evacuated by the turbo-molecular pump 3 as an exhaust device. By supplying high-frequency power of 100 MHz to an antenna 5 provided to protrude into the vacuum vessel 1, plasma is generated in the vacuum vessel 1 and plasma processing is performed on the substrate 7 placed on the substrate electrode 6. It can be carried out. Further, a high-frequency power supply 8 for substrate electrodes for supplying high-frequency power to the substrate electrodes 6 is provided so that ion energy reaching the substrate 7 can be controlled. The high-frequency voltage supplied to the antenna 5 is supplied to the vicinity of the center of the antenna 5 by the power supply rod 9. Further, a plurality of portions different from the center and the periphery of the antenna 5 and the surface 1 ′ of the vacuum vessel 1 facing the substrate 7 are short-circuited by the short pins 10. A dielectric plate 11 is sandwiched between the antenna 5 and the vacuum vessel 1, and a feed rod 9 is provided.
The short pin 10 connects the antenna 5 to the high-frequency power source 4 for the antenna, and connects the antenna 5 to the vacuum vessel 1 ′ via a through hole provided in the dielectric plate 11. The surface of the antenna 5 is covered with a cover 12. A groove-shaped space between the dielectric plate 11 and a dielectric ring 13 provided around the dielectric plate 11;
There is provided a plasma trap 15 comprising a groove-like space between the antenna ring and a conductor ring 14 provided on the periphery of the antenna 5.

The turbo molecular pump 3 and the exhaust port 16 are disposed immediately below the substrate electrode 6, and a pressure regulating valve 17 for controlling the vacuum vessel 1 to a predetermined pressure is provided with the substrate electrode 6.
And a lift valve located immediately below the turbo molecular pump 3. Further, the inner wall surface of the vacuum vessel 1 is covered by the inner chamber 18 to prevent the vacuum vessel 1 from being stained by the plasma processing. Predetermined number of substrates 7
After the processing, the dirty inner chamber 18 is replaced with a rotation part so that the maintenance work can be promptly performed. The substrate electrode 6 is fixed to the vacuum vessel 1 by four columns 19.

The vacuum vessel 1 is grounded, and the vacuum vessel 1 is separated into a side with the substrate 7 and a side without the substrate 7 (a hatched portion in FIG. 1) by a punching metal 20 whose outer peripheral portion is almost entirely grounded. ing. As shown in the plan view of the plasma processing apparatus of FIG.
Has a punching hole pitch of 1.2 mm. For the sake of simplicity, FIG. 2 shows the size of the punched holes large, and the number of punched holes is actually larger. Typically, the diameter of the substrate electrode 6 is 220 mm, the inner diameter of the inner chamber 18 is 450 mm, and (450−220) / (2 × 1.2) ≒ 95 punching holes are provided in the radial direction. The opening 2 of the inner chamber 18
1 (a gate for taking a wafer in and out of the vacuum chamber 1 and a viewing port for observing plasma emission) from the electromagnetic wave to the side of the vacuum vessel 1 separated into two regions without the substrate 7 Is grounded at a grounding point 22 (FIG. 1) downstream of the opening 21 of the inner chamber 18 so as not to leak.

FIG. 3 is a plan view of the antenna 5. In FIG. 3, the short pins 10 are provided at three places.
Each short pin 10 is equally arranged with respect to the center of the antenna 5.

In the plasma processing apparatus shown in FIGS. 1 to 3, the substrate with the iridium film was etched. The etching conditions are argon / chlorine = 260/20 sccm,
Pressure = 0.3 Pa, antenna power = 1500 W, substrate electrode power = 400 W. When etching was performed under such conditions, plasma did not spread to a region downstream of the substrate electrode 6 (hatched portion in FIG. 1), and a favorable discharge state could be obtained.

It is considered that the reason why the downstream discharge can be suppressed is that the high-frequency electromagnetic wave is shielded by the punching metal 20 and the electromagnetic wave does not reach the downstream. Since the plasma does not spread to the downstream, the processing efficiency with respect to the power supplied to the vacuum chamber 1 as the processing chamber is improved as compared with the conventional example, and the etch rate is improved by 9% when compared under the same etching conditions (conventionally. (Example: 79 nm / min, the first embodiment of the present invention: 86 nm / min). In addition, vacuum vessel 1 by processing
Dirt did not spread to the downstream, reducing the burden of maintenance work.

Next, a second embodiment of the present invention will be described with reference to FIGS.

FIG. 4 is a sectional view of a plasma processing apparatus used in the second embodiment of the present invention. In FIG.
While introducing a predetermined gas from the gas supply device 2 into the vacuum vessel 1, the gas is evacuated by the turbo-molecular pump 3 as an exhaust device. By supplying high-frequency power of 100 MHz to the antenna 5 protruding into the vacuum vessel 1, plasma is generated in the vacuum vessel 1 and plasma processing is performed on the substrate 7 placed on the substrate electrode 6. It can be carried out. Further, a high-frequency power supply 8 for the substrate electrode for supplying high-frequency power to the substrate electrode 6 is provided, so that the ion energy reaching the substrate 7 can be controlled. The high-frequency voltage supplied to the antenna 5 is supplied to the vicinity of the center of the antenna 5 by the power supply rod 9. Further, a plurality of portions different from the center and the periphery of the antenna 5 and the surface 1 ′ of the vacuum vessel 1 facing the substrate 7 are short-circuited by the short pins 10. A dielectric plate 11 is sandwiched between the antenna 5 and the vacuum vessel 1, and a feed rod 9 is provided.
The short pin 10 connects the antenna 5 and the high-frequency power source 4 for the antenna, and connects the antenna 5 and the vacuum vessel 1 ′ via through holes provided in the dielectric plate 11. The surface of the antenna 5 is covered by a cover 12. A groove-shaped space between the dielectric plate 11 and a dielectric ring 13 provided around the dielectric plate 11;
There is provided a plasma trap 15 comprising a groove-like space between the antenna ring and a conductor ring 14 provided on the periphery of the antenna 5.

The turbo molecular pump 3 and the exhaust port 16 are arranged directly below the substrate electrode 6. A pressure regulating valve 17 for controlling the vacuum vessel 1 to a predetermined pressure is provided with the substrate electrode 6.
And a lift valve located immediately below the turbo molecular pump 3. Further, the inner wall surface of the vacuum vessel 1 is covered by the inner chamber 18 to prevent the vacuum vessel 1 from being stained by the plasma processing. Predetermined number of substrates 7
After the processing, the dirty inner chamber 18 is replaced with a rotation part so that the maintenance work can be promptly performed. The substrate electrode 6 is fixed to the vacuum vessel 1 by four columns 19.

The vacuum vessel 1 is grounded, and the vacuum vessel 1 is separated by a radio wave absorber 23 into a side with the substrate 7 and a side without the substrate 7 (hatched portion in FIG. 4). As the radio wave absorber 23, one using eddy current loss such as ferrite can be used. Further, as shown in the plan view of the plasma processing apparatus of FIG. 5, the pitch of the holes provided in the radio wave absorber 23 is 12 mm. For the sake of simplicity, the size of the holes is drawn larger in FIG. 5, and the number of holes is actually larger. Typically, the diameter of the substrate electrode 6 is 220 mm, and the inner diameter of the inner chamber 18 is 450 mm
The number of holes provided in the radio wave absorber 23 is (450-220) / (2 × 12) ≒ 9 in the radial direction. Further, the vacuum chamber 1 separated into two regions from an opening 21 of the inner chamber 18 (a gate for taking a wafer into and out of the vacuum chamber 1 and a viewing port for observing plasma emission). In order to prevent electromagnetic waves from leaking to the side where the substrate 7 is not provided, the grounding is performed at a grounding point 22 (FIG. 4) downstream of the opening 21 of the inner chamber 18.

Since the plan view of the antenna 5 is the same as that of FIG. 3, the description is omitted here.

In the plasma processing apparatus shown in FIGS. 4 and 5, the substrate with the platinum film was etched. The etching conditions were argon / chlorine = 260/20 sccm, pressure =
0.3 Pa, antenna power = 1500 W, substrate electrode power = 400 W. When etching was performed under such conditions, plasma did not spread to a region downstream of the substrate electrode 6 (hatched portion in FIG. 4), and a favorable discharge state could be obtained.

It is considered that the reason why the downstream discharge was suppressed as described above is that the radio wave absorber 23 shielded the high-frequency electromagnetic waves and stopped the electromagnetic waves from reaching the downstream. In the first embodiment of the present invention, high-frequency electromagnetic waves are reflected by the punching metal 20, but in the second embodiment of the present invention, there is a difference in that electromagnetic waves are absorbed and attenuated by the radio wave absorber 23. In the second embodiment of the present invention, there is no need to ground the outer peripheral portion of the radio wave absorber 23, and there is an advantage that the degree of freedom in design increases. On the other hand, since the electromagnetic wave is absorbed and attenuated, the first embodiment of the present invention is superior in power efficiency.

In the second embodiment of the present invention, since the plasma does not spread to the downstream, the processing efficiency with respect to the power supplied to the vacuum chamber 1 as the processing chamber is improved as compared with the conventional example, and the same etching conditions are used. By comparison,
Etch rate improved by 4% (conventional example: 82 nm / mi)
n, the second embodiment of the present invention: 85 nm / min). Also, the contamination of the vacuum vessel 1 due to the processing does not spread to the downstream,
The burden of maintenance work has been reduced.

Next, a third embodiment of the present invention will be described with reference to FIG.

FIG. 6 is a sectional view of a plasma processing apparatus used in the third embodiment of the present invention. In FIG.
While introducing a predetermined gas from the gas supply device 2 into the vacuum vessel 1, the gas is evacuated by the turbo-molecular pump 3 as an exhaust device. By supplying high-frequency power of 100 MHz to the antenna 5 protruding into the vacuum vessel 1, plasma is generated in the vacuum vessel 1 and plasma processing is performed on the substrate 7 placed on the substrate electrode 6. It can be carried out. Further, a high-frequency power supply 8 for the substrate electrode for supplying high-frequency power to the substrate electrode 6 is provided, so that the ion energy reaching the substrate 7 can be controlled. The high-frequency voltage supplied to the antenna 5 is supplied to the vicinity of the center of the antenna 5 by the power supply rod 9. Further, a plurality of portions different from the center and the periphery of the antenna 5 and the surface 1 ′ of the vacuum vessel 1 facing the substrate 7 are short-circuited by the short pins 10. A dielectric plate 11 is sandwiched between the antenna 5 and the vacuum vessel 1, and a feed rod 9 is provided.
The short pin 10 connects the antenna 5 and the high-frequency power source 4 for the antenna, and connects the antenna 5 and the vacuum vessel 1 ′ via through holes provided in the dielectric plate 11. The surface of the antenna 5 is covered by a cover 12. A groove-shaped space between the dielectric plate 11 and a dielectric ring 13 provided around the dielectric plate 11;
There is provided a plasma trap 15 comprising a groove-like space between the antenna ring and a conductor ring 14 provided on the periphery of the antenna 5.

The turbo molecular pump 3 and the exhaust port 16 are disposed immediately below the substrate electrode 6, and a pressure regulating valve 17 for controlling the vacuum vessel 1 to a predetermined pressure is connected to the substrate electrode 6.
And a lift valve located immediately below the turbo molecular pump 3. Further, the inner wall surface of the vacuum vessel 1 is covered by the inner chamber 18 to prevent the vacuum vessel 1 from being stained by the plasma processing. Predetermined number of substrates 7
After the processing, the dirty inner chamber 18 is replaced with a rotation part so that the maintenance work can be promptly performed. The substrate electrode 6 is fixed to the vacuum vessel 1 by four columns 19.

The vacuum vessel 1 is grounded, and the vacuum vessel 1 is separated by a plurality of porous conductors 20 and 26 into a side with the substrate 7 and a side without the substrate 7 (hatched portion in FIG. 6). The plan views of the porous conductors 20 and 26 are almost the same as those shown in FIG. 2, but the hole pitch is as large as 5 mm and the aperture ratio is as large as 65%. The distance between the porous conductors 20 and 26 was 10 mm. Further, the vacuum chamber 1 separated into two regions from an opening 21 of the inner chamber 18 (a gate for taking a wafer into and out of the vacuum chamber 1 and a viewing port for observing plasma emission). In order to prevent electromagnetic waves from leaking to the side where the substrate 7 is not provided, a grounding point 22 (FIG. 6) downstream of the opening 21 of the inner chamber 18 is provided.

Since the plan view of the antenna 5 is the same as that of FIG. 3, the description is omitted here.

In the plasma processing apparatus shown in FIG. 6, the substrate with the platinum film was etched. The etching conditions are argon / chlorine = 260/20 sccm, pressure = 0.3 P
a, antenna power = 1500 W, substrate electrode power = 400
W. When the etching treatment was performed under such conditions, the plasma did not spread to a region downstream of the substrate electrode 6 (hatched portion in FIG. 6), and a favorable discharge state could be obtained. Further, the decrease in the exhaust speed is smaller than that in the first embodiment of the present invention.
When the nitrogen gas of 00 sccm was introduced, the pressure on the side of the vacuum vessel 1 where the substrate 7 was located was 1.2 Pa (in the first embodiment of the present invention, the pressure regulating valve 17 was fully opened and 1000 sc
When nitrogen gas of 1 cm was introduced, the pressure of the vacuum vessel 1 on the side of the substrate 7 was 1.4 Pa).

As described above, the discharge at the downstream can be suppressed, and the decrease in the exhaust speed can be suppressed. This effect can be explained as follows. The electric field intensity due to the electromagnetic wave leaking to the side of the vacuum vessel separated into two regions without the substrate is reduced to about 1/10 by one layer of the porous conductor having an aperture ratio of 65%.
Pumping speed is about 2 /
It drops to 3. The electric field intensity due to the electromagnetic wave leaking to the side of the vacuum vessel separated into two regions without the substrate by the two-layer porous conductor having an aperture ratio of 65% is (1/10) ² = 1/1.
00, the pumping speed is reduced to (2/3) ² = 4/9 by the porous conductor of one layer having an aperture ratio of 65%. On the other hand, the aperture ratio of the porous conductor needs to be 20% in order to reduce the electric field intensity due to electromagnetic waves leaking to the non-substrate side of the vacuum vessel separated into two regions by one layer of the porous conductor to 1/100. There is. At this time, the pumping speed decreases to about 1/5. Therefore, the use of a two-layer porous conductor having a high aperture ratio can effectively prevent the electromagnetic wave from wrapping around while minimizing the reduction in the pumping speed.

In the third embodiment of the present invention, a case where two layers of porous conductors are used has been described. However, three or more layers of porous conductors can be used. In addition, it is possible to suppress the downstream discharge by using both the porous conductor and the radio wave absorber. The radio wave absorber is generally made of ferrite,
Since it contains iron, there is a risk of heavy metal contamination on the substrate. However, the porous conductor is located on the side of the vacuum vessel where the substrate is separated into two regions, and the porous electromagnetic wave absorber is located on the two regions. By adopting a structure in which the separated vacuum vessel faces the side where no substrate is provided, the occurrence of contamination can be suppressed.
Therefore, by using the porous conductor and the porous electromagnetic wave absorber, it is possible to effectively prevent the electromagnetic wave from wrapping around while minimizing the decrease in the pumping speed.

Further, in the third embodiment of the present invention,
Although the case where the distance between the porous conductors is 10 mm has been described, the distance between the porous conductors of the plurality of layers is 3 mm to 30 m.
m is desirable. If it is less than 3 mm, the wraparound of the electromagnetic wave on the side where no substrate is liable to increase, and if it exceeds 30 mm, discharge may occur in the space between the layers of the porous conductor. Further, it is desirable that the aperture ratio of each of the plurality of layers of the porous conductor is 50% or more. 50
%, The evacuation speed is remarkably reduced, and the effect of multilayering is small. When a porous conductor and a radio wave absorber are used, the distance between the porous conductor and the radio wave absorber is 3 m.
It is desirable that the length be from m to 30 mm. If it is less than 3 mm, the wraparound of the electromagnetic wave to the side without the substrate tends to increase, while if it exceeds 30 mm, discharge may occur in the space between the porous conductor and the porous electromagnetic wave absorber.

Further, the aperture ratio of the porous conductor and the radio wave absorber is
It is desirable that each is 50% or more. If it is less than 50%, the evacuation speed is significantly reduced, and the effect of multilayering is small.

In the third embodiment of the present invention, since the plasma does not spread to the downstream, the processing efficiency with respect to the power supplied to the vacuum vessel 1 as the processing chamber is improved as compared with the conventional example, and the same etching conditions are used. By comparison,
Etch rate improved by 5% (conventional example: 80 nm / mi)
n, the third embodiment of the present invention: 84 nm / min). Also, the contamination of the vacuum vessel 1 due to the processing does not spread to the downstream,
The burden of maintenance work has been reduced.

In the embodiment of the present invention described above,
In the applicable range of the present invention, only a part of various variations regarding the shape of the vacuum vessel, the shape and the arrangement of the antenna, and the like are illustrated. In applying the present invention, it goes without saying that various variations other than those exemplified here are possible.

In the embodiment of the present invention described above,
A high-frequency voltage is supplied to the antenna through a through hole provided near the center of the dielectric plate. The high-frequency voltage is supplied to a part different from the center and the periphery of the dielectric plate, and is substantially equidistant from the center of the antenna. Although the case where the antenna and the vacuum vessel are short-circuited by the short pin via the through hole has been described, the isotropy of the plasma can be further improved by adopting such a configuration. If the board is small,
It goes without saying that a sufficiently high in-plane uniformity can be obtained without using a short pin.

In the embodiment of the present invention described above, the substrate is processed in a state where the plasma distribution on the substrate is controlled by the annular and groove-shaped plasma trap provided between the antenna and the vacuum vessel. Although the description has been given of the case where the plasma processing is performed, the uniformity of the plasma can be further improved by adopting such a configuration. If the board is small,
It goes without saying that sufficiently high in-plane uniformity can be obtained without using a plasma trap.

The present invention is also effective when the coil 24 in the inductively coupled plasma source shown in FIG. 7 or the electromagnetic wave radiation antenna 25 in the surface wave plasma source shown in FIG. 8 is used as the antenna.

In the embodiment of the present invention described above, the turbo molecular pump for evacuating the vacuum vessel is disposed immediately below the substrate electrode, and the substrate of the vacuum vessel is divided into two regions. The exhaust port is located on the side with no, and a pressure regulating valve for controlling the vacuum vessel to a predetermined pressure is an elevating valve located immediately below the substrate electrode and immediately above the turbo molecular pump. Although the case where the pressure regulating valve is located on the side of the vacuum vessel separated into two regions where no substrate is provided has been described, as shown in FIG. 9, the turbo molecular pump 3 is disposed immediately below the substrate electrode 6. Pressure regulator 17
The present invention is effective even when the pressure control valve 17 is not disposed immediately below the substrate electrode 6 and the pressure regulating valve 17 is not a lift valve.

Also, the case where the pressure in the vacuum vessel is 0.3 Pa has been described. However, the lower the pressure in the vacuum vessel, the more easily plasma is generated in the downstream. Is 10 Pa or less. Furthermore, this is a particularly effective method when the pressure in the vacuum vessel is 1 Pa or less.

Further, the case where the frequency of the high-frequency power applied to the antenna is 100 MHz has been described.
100kHz to 3G for plasma processing at low pressure
Hz high frequency power can be used, and the present invention is effective in all the regions. However, as the frequency of the high-frequency power is higher, the electromagnetic wave tends to spread in a wider range, so that plasma is easily generated downstream. Therefore, the present invention is an effective method when the frequency of the high frequency power is high, particularly when the frequency is 50 MHz to 3 GHz.

Further, in the first embodiment of the present invention, the case where a punching metal is used has been described. However, a metal mesh formed by performing a wet etching process on a conductive mesh or a thin metal plate provided with an etching mask, Even if various porous conductors such as a conductor plate manufactured by machining are used, the same effect can be obtained.

Further, in the first embodiment of the present invention, the case where the punching hole pitch of the punching metal is 1.2 mm has been described. It must be sufficiently smaller than the wavelength. Generally, when it is desired to prevent leakage of electromagnetic waves in the atmosphere, the wavelength of the electromagnetic waves in a vacuum (= c /
It is known that a sufficient shielding effect can be obtained by a porous conductor such as a punched metal or a mesh having a pitch smaller than about 0.03 times that of f), but the wavelength of the electromagnetic wave in plasma is larger than that in vacuum. Special phenomena that the size becomes smaller. According to our experiments, when the hole pitch or mesh pitch of a porous conductor such as a punched metal or a conductor mesh is p, the frequency of the high-frequency power applied to the antenna is f, and the speed of light is c, p <0.002 × c It has been found that when the relational expression / f is satisfied, plasma generation downstream can be suppressed under a considerably wide range of discharge conditions. However, in order to more reliably suppress downstream plasma generation, the punching hole pitch or mesh pitch of a porous conductor such as a punching metal or a conductor mesh is p, the frequency of the high-frequency power applied to the antenna is f, and the speed of light is c. Then, it is desirable to satisfy the relational expression of p <0.0005 × c / f.

Further, in the second embodiment of the present invention, the case where the pitch of the holes provided in the radio wave absorber is 12 mm has been described. It is necessary to have a small hole pitch. Unlike using a punched metal or conductor mesh, when using a radio wave absorber, the electromagnetic wave penetrates into the radio wave absorber itself rather than through the holes and attenuates inside the radio wave absorber. May be larger than in the case of using a punched metal or a conductor mesh. The larger the hole pitch, the more advantageous in terms of exhaust characteristics. According to our experiment, when the pitch of the holes provided in the radio wave absorber is p, the frequency of the high frequency power applied to the antenna is f, and the speed of light is c, the relational expression of p <0.02 × c / f is obtained. It has been found that when satisfies, the plasma generation downstream can be suppressed under a fairly wide range of discharge conditions. However, in order to more reliably suppress the downstream plasma generation, when the pitch of the holes provided in the radio wave absorber is p, the frequency of the high-frequency power applied to the antenna is f, and the speed of light is c, p <0 It is desirable to satisfy the relational expression of .005 × c / f.

Further, in the embodiment of the present invention, the inner wall of the vacuum chamber is covered with the inner chamber, and the electromagnetic wave is transmitted from the opening of the inner chamber to the side of the vacuum chamber separated into two regions without the substrate. Although the case where the downstream side is grounded from the opening of the inner chamber has been described so as not to leak, generation of plasma downstream can be more effectively prevented by adopting such a structure. However, in some cases, even without such a structure, generation of plasma downstream can be prevented.

[0127]

As is clear from the above description, according to the plasma processing method of the first invention of the present application, the inside of the vacuum vessel is evacuated while supplying the gas into the vacuum vessel, and the inside of the vacuum vessel is maintained at a predetermined pressure. While controlling the antenna at a frequency of 10
A plasma processing method for processing a substrate by generating plasma in a vacuum vessel by applying a high-frequency power of 0 kHz to 3 GHz, wherein the vacuum vessel is grounded and almost all of the outer peripheral portion is grounded. The vacuum vessel is separated into the side with and without the substrate by the metal or conductor mesh, and the substrate is processed in a state where the plasma does not flow around the side without the substrate. A plasma processing method that can be reduced can be realized.

Further, according to the plasma processing method of the second invention of the present application, the inside of the vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the inside of the vacuum vessel is controlled while controlling the inside of the vacuum vessel to a predetermined pressure. A plasma processing method for generating plasma in a vacuum vessel by applying high-frequency power having a frequency of 100 kHz to 3 GHz to an antenna provided to face a substrate mounted on a substrate electrode and processing the substrate. ,
The vacuum vessel is grounded, and the vacuum vessel is separated into a side with the substrate and a side without the substrate by a radio wave absorber provided with a number of holes, and the substrate is placed in a state where plasma does not flow around to the side without the substrate. Since the processing is performed, a plasma processing method with high power efficiency and capable of reducing maintenance work can be realized.

Further, according to the plasma processing apparatus of the third invention of the present application, a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, A pressure regulating valve for controlling the inside of the container to a predetermined pressure, and a substrate electrode for placing the substrate in the vacuum container,
What is claimed is: 1. A plasma processing apparatus comprising: an antenna provided to face a substrate electrode; and a high-frequency power supply capable of supplying high-frequency power having a frequency of 100 kHz to 3 GHz to the antenna, wherein a vacuum vessel is grounded and an outer peripheral portion is provided. The vacuum vessel is separated into the side with the substrate and the side without the substrate by punched metal or conductive mesh, which is almost entirely grounded. And a plasma processing apparatus capable of reducing maintenance work.

Further, according to the plasma processing apparatus of the fourth invention of the present application, a vacuum container, a gas supply device for supplying a gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, A pressure regulating valve for controlling the inside of the container to a predetermined pressure, and a substrate electrode for placing the substrate in the vacuum container,
A plasma processing apparatus comprising: an antenna provided to face a substrate electrode; and a high-frequency power supply capable of supplying high-frequency power having a frequency of 100 kHz to 3 GHz to the antenna. Since the vacuum vessel is separated into the side with the substrate and the side without the substrate by the radio wave absorber provided with holes, it is difficult for the plasma to spread to the area downstream of the substrate electrode, and the power efficiency is good, and In addition, a plasma processing apparatus that can reduce maintenance work can be realized.

Further, according to the plasma processing method of the fifth invention of the present application, the inside of the vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the inside of the vacuum vessel is controlled while maintaining the inside of the vacuum vessel at a predetermined pressure. A plasma processing method for generating plasma in a vacuum vessel by applying high-frequency power having a frequency of 100 kHz to 3 GHz to an antenna provided to face a substrate mounted on a substrate electrode and processing the substrate. ,
The vacuum vessel is grounded, and the vacuum vessel is separated into a side without the substrate and a side without the substrate by a porous conductor whose outer peripheral portion is almost entirely grounded. Therefore, a plasma processing method with good power efficiency and reduced maintenance work can be realized.

According to the plasma processing apparatus of the sixth aspect of the present invention, a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, A pressure regulating valve for controlling the pressure to a predetermined pressure, a substrate electrode for placing the substrate in a vacuum vessel, an antenna provided to face the substrate electrode, and a high-frequency power having a frequency of 100 kHz to 3 GHz to the antenna. A plasma processing apparatus comprising a high-frequency power supply capable of supplying a vacuum container, wherein the vacuum container is grounded, and the outer periphery is substantially grounded. Therefore, a plasma processing apparatus which has good power efficiency and can reduce maintenance work can be realized.

According to the plasma processing method of the seventh aspect of the present invention, the inside of the vacuum vessel is evacuated while supplying the gas into the grounded vacuum vessel, and the inside of the vacuum vessel is controlled to a predetermined pressure.
Plasma processing in which plasma is generated in a vacuum container by applying high-frequency power having a frequency of 100 kHz to 3 GHz to an antenna provided opposite to a substrate placed on a substrate electrode in the vacuum container to process the substrate. In a method, a vacuum vessel is separated into a side with a substrate and a side without a substrate by a plurality of layers of porous conductors, the outer periphery of which is almost entirely grounded, and the substrate is placed in a state where plasma does not flow around to the side without the substrate Therefore, a plasma processing method with good power efficiency and reduced maintenance work can be realized.

According to the plasma processing method of the eighth invention of the present application, the inside of the vacuum vessel is evacuated while supplying the gas into the grounded vacuum vessel, and the inside of the vacuum vessel is controlled to a predetermined pressure.
Plasma processing in which plasma is generated in a vacuum container by applying high-frequency power having a frequency of 100 kHz to 3 GHz to an antenna provided opposite to a substrate placed on a substrate electrode in the vacuum container to process the substrate. A method in which a vacuum vessel is separated into a side with a substrate and a side without a substrate by a porous conductor whose outer peripheral portion is almost entirely grounded and a porous radio wave absorber, and plasma does not flow around to the side without a substrate. Since the substrate is processed in the state, it is possible to realize a plasma processing method which has high power efficiency and can reduce maintenance work.

According to the plasma processing apparatus of the ninth invention of the present application, a grounded vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, A pressure regulating valve for controlling the inside of the vacuum vessel to a predetermined pressure, a substrate electrode for placing the substrate in the vacuum vessel, an antenna provided opposite to the substrate electrode, and an antenna having a frequency of 100 kHz to 3 GHz. A plasma processing apparatus provided with a high-frequency power supply capable of supplying high-frequency power, wherein a vacuum vessel is provided on a side with a substrate and a side without a substrate by a plurality of layers of porous conductors whose outer peripheral portions are almost all grounded. Because it is separated, power efficiency is good and
A plasma processing apparatus that can reduce maintenance work can be realized.

According to the plasma processing apparatus of the tenth aspect of the present invention, a grounded vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, A pressure regulating valve for controlling the inside of the vacuum vessel to a predetermined pressure, a substrate electrode for placing the substrate in the vacuum vessel, an antenna provided opposite to the substrate electrode, and an antenna having a frequency of 100 kHz to 3 GHz. A plasma processing apparatus provided with a high-frequency power supply capable of supplying high-frequency power, wherein a porous container having substantially the entire outer peripheral portion grounded, and a porous radio wave absorber, the vacuum container is connected to the side of the substrate and the substrate. Since it is separated on the non-existing side, it is possible to realize a plasma processing apparatus having good power efficiency and capable of reducing maintenance work.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a configuration of a plasma processing apparatus used in a first embodiment of the present invention.

FIG. 2 is a plan view showing a configuration of a plasma processing apparatus used in the first embodiment of the present invention.

FIG. 3 is a plan view of the antenna used in the first embodiment of the present invention.

FIG. 4 is a sectional view showing a configuration of a plasma processing apparatus used in a second embodiment of the present invention.

FIG. 5 is a plan view showing a configuration of a plasma processing apparatus used in a second embodiment of the present invention.

FIG. 6 is a sectional view showing a configuration of a plasma processing apparatus used in a third embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a configuration when the present invention is applied to an inductively coupled plasma source type plasma processing apparatus.

FIG. 8 is a cross-sectional view showing a configuration when the present invention is applied to a surface wave plasma source type plasma processing apparatus.

FIG. 9 is a sectional view showing a configuration of a plasma processing apparatus which is a modification of the first embodiment of the present invention.

FIG. 10 is a sectional view showing a configuration of a plasma processing apparatus used in a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Gas supply device 3 Turbo molecular pump 4 High frequency power supply for antenna 5 Antenna 6 Substrate electrode 7 Substrate 8 High frequency power supply for substrate electrode 9 Feeding rod 10 Short pin 11 Dielectric plate 12 Cover 13 Dielectric ring 14 Conductor ring 15 Plasma trap Reference Signs List 16 exhaust port 17 pressure regulating valve 18 inner chamber 19 column 20 punching metal 21 opening 22 grounding point

 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Matsuda Izumi 1006 Kadoma, Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. Terms (reference) 4G075 AA24 AA30 AA61 BC06 CA25 CA47 CA65 DA02 DA18 EB01 EC21 EC30 EE02 FA01 FC11 FC15 FC20 5F004 AA16 BA20 BB11

Claims (82)

[Claims] 1. While evacuating the inside of a vacuum vessel while supplying gas into the vacuum vessel and controlling the inside of the vacuum vessel to a predetermined pressure,
Plasma processing in which plasma is generated in a vacuum container by applying high-frequency power having a frequency of 100 kHz to 3 GHz to an antenna provided opposite to a substrate placed on a substrate electrode in the vacuum container to process the substrate. A method wherein a vacuum vessel is grounded, and the vacuum vessel is separated into a side without a substrate and a side without a substrate by a punching metal or a conductive mesh whose outer periphery is grounded almost entirely. A plasma processing method, wherein the substrate is processed in a state in which wraparound does not occur. 2. The method according to claim 1, further comprising evacuating the vacuum vessel while supplying gas into the vacuum vessel, and controlling the inside of the vacuum vessel to a predetermined pressure.
Plasma processing in which plasma is generated in a vacuum container by applying high-frequency power having a frequency of 100 kHz to 3 GHz to an antenna provided opposite to a substrate placed on a substrate electrode in the vacuum container to process the substrate. A method in which the vacuum vessel is grounded, and the vacuum vessel is separated into a side with the substrate and a side without the substrate by a radio wave absorber provided with a number of holes, and the plasma wraps around the side without the substrate. A plasma processing method characterized by processing a substrate in a state where the substrate is not present. 3. The plasma processing method according to claim 1, wherein a dielectric plate is sandwiched between the antenna and the vacuum container, and the antenna and the dielectric plate have a structure protruding into the vacuum container. . 4. A high-frequency voltage is supplied to the antenna through a through hole provided near the center of the dielectric plate, provided at a part different from the center and the periphery of the dielectric plate, and substantially with respect to the center of the antenna. 4. The plasma processing method according to claim 3, wherein the antenna and the vacuum vessel are short-circuited by a short pin via the equally arranged through holes. 5. The substrate is processed in a state where the plasma distribution on the substrate is controlled by an annular and groove-shaped plasma trap provided between the antenna and the vacuum vessel. The plasma processing method as described above. 6. A turbo-molecular pump for evacuating a vacuum vessel is disposed immediately below a substrate electrode, and an exhaust port is located on a side of the vacuum vessel separated into two regions, on which no substrate is provided. 3. The plasma processing method according to claim 1, wherein: 7. A pressure regulating valve for controlling a vacuum vessel to a predetermined pressure is an elevating valve located immediately below a substrate electrode and immediately above a turbo molecular pump, and a vacuum vessel divided into two regions. 7. The plasma processing method according to claim 6, wherein the pressure regulating valve is located on the side where no substrate is provided. 8. The plasma processing method according to claim 1, wherein the pressure on one side of the substrate of the vacuum vessel separated into two regions is 10 Pa or less. 9. The plasma processing method according to claim 1, wherein the pressure on one side of the substrate of the vacuum vessel separated into two regions is 1 Pa or less. 10. The plasma processing method according to claim 1, wherein the frequency of the high-frequency power applied to the antenna is 50 MHz to 3 GHz. 11. A relational expression of p <0.002 × c / f, where p is a punching hole pitch or mesh pitch of a punched metal or a conductive mesh, f is a frequency of high frequency power applied to the antenna, and c is a light speed. The plasma processing method according to claim 1, wherein the following condition is satisfied. 12. A relational expression of p <0.0005 × c / f, where p is a punching hole pitch or a mesh pitch of a punched metal or a conductor mesh, f is a frequency of a high-frequency power applied to an antenna, and c is a light speed. The plasma processing method according to claim 1, wherein the following condition is satisfied. 13. When the pitch of the holes provided in the radio wave absorber is p, the frequency of the high frequency power applied to the antenna is f, and the speed of light is c, the relational expression of p <0.02 × c / f is satisfied. 3. The plasma processing method according to claim 2, wherein: 14. When the pitch of the holes provided in the radio wave absorber is p, the frequency of the high frequency power applied to the antenna is f, and the speed of light is c, the relational expression of p <0.005 × c / f is satisfied. 3. The plasma processing method according to claim 2, wherein: 15. The inner chamber covers the inner wall surface of the vacuum vessel, and the inner chamber has an opening through the inner chamber.
3. The plasma processing method according to claim 1, wherein the downstream side of the opening of the inner chamber is grounded so that the electromagnetic wave does not leak to the side of the vacuum vessel separated into two regions where the substrate does not exist. 16. A vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a pressure regulating valve for controlling the inside of the vacuum container to a predetermined pressure. A substrate electrode for placing the substrate in a vacuum vessel, an antenna provided to face the substrate electrode, and a high-frequency power supply capable of supplying high-frequency power having a frequency of 100 kHz to 3 GHz to the antenna. A plasma processing apparatus, characterized in that a vacuum vessel is grounded, and that the vacuum vessel is separated into a side without a substrate and a side without a substrate by a punched metal or a conductive mesh whose outer peripheral portion is substantially grounded. Plasma processing apparatus. 17. A vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a pressure regulating valve for controlling the inside of the vacuum container to a predetermined pressure. A substrate electrode for placing the substrate in a vacuum vessel, an antenna provided to face the substrate electrode, and a high-frequency power supply capable of supplying high-frequency power having a frequency of 100 kHz to 3 GHz to the antenna. A plasma processing apparatus, wherein a vacuum vessel is grounded, and the vacuum vessel is separated into a side without a substrate and a side without a substrate by a radio wave absorber provided with a number of holes. apparatus. 18. The antenna according to claim 16, wherein a dielectric plate is sandwiched between the antenna and the vacuum container, and the antenna and the dielectric plate have a structure protruding into the vacuum container.
The plasma processing apparatus as described in the above. 19. A high-frequency voltage is supplied to the antenna via a through hole provided near the center of the dielectric plate, provided at a part different from the center and the periphery of the dielectric plate, and substantially with respect to the center of the antenna. Through the evenly arranged through holes,
19. The plasma processing apparatus according to claim 18, wherein the antenna and the vacuum vessel are short-circuited by a short pin. 20. The plasma processing apparatus according to claim 18, wherein an annular and groove-shaped plasma trap provided between the antenna and the vacuum vessel is provided. 21. A turbo-molecular pump for evacuating a vacuum vessel is disposed immediately below the substrate electrode, and
18. The plasma processing apparatus according to claim 16, wherein an exhaust port is located on a side of the vacuum container separated into two regions where no substrate is provided. 22. A pressure regulating valve for controlling a vacuum vessel to a predetermined pressure is an elevating valve located immediately below a substrate electrode and immediately above a turbo molecular pump, and a vacuum vessel divided into two regions. 22. The plasma processing apparatus according to claim 21, wherein the pressure regulating valve is located on the side where no substrate is provided. 23. The plasma processing apparatus according to claim 16, wherein the frequency of the high-frequency power applied to the antenna is 50 MHz to 3 GHz. 24. A relational expression of p <0.002 × c / f, where p is a punching hole pitch or mesh pitch of a punched metal or conductor mesh, f is a frequency of high frequency power applied to the antenna, and c is a light speed. 17. The plasma processing apparatus according to claim 16, wherein: 25. A relational expression of p <0.0005 × c / f, where p is a punching hole pitch or a mesh pitch of a punched metal or a conductor mesh, f is a frequency of high frequency power applied to the antenna, and c is a light speed. 17. The plasma processing apparatus according to claim 16, wherein: 26. When the pitch of the holes provided in the radio wave absorber is p, the frequency of the high frequency power applied to the antenna is f, and the speed of light is c, the relational expression of p <0.02 × c / f is satisfied. 18. The plasma processing apparatus according to claim 17, wherein: 27. When the pitch of the holes provided in the radio wave absorber is p, the frequency of the high frequency power applied to the antenna is f, and the speed of light is c, the relational expression of p <0.005 × c / f is satisfied. 18. The plasma processing apparatus according to claim 17, wherein: 28. The inner chamber covers the inner wall surface of the vacuum vessel, and the inner chamber has two openings through an opening of the inner chamber.
18. The plasma processing apparatus according to claim 16, wherein the downstream side of the opening of the inner chamber is grounded so that the electromagnetic wave does not leak to the side of the vacuum vessel separated into two regions where the substrate does not exist. 29. A vacuum vessel is evacuated while supplying gas into the vacuum vessel, and is provided to face a substrate mounted on a substrate electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. The antenna has a frequency of 100 kHz to 3 GHz.
A plasma processing method for processing a substrate by generating plasma in a vacuum vessel by applying a high-frequency power of z, wherein the vacuum vessel is grounded, and a porous conductor having substantially the entire outer periphery grounded. A plasma processing method, wherein a vacuum vessel is separated into a side with a substrate and a side without a substrate, and the substrate is processed in a state where plasma does not flow around the side without the substrate. 30. The plasma processing method according to claim 29, wherein a dielectric plate is sandwiched between the antenna and the vacuum container, and the antenna and the dielectric plate have a structure protruding into the vacuum container. 31. A high-frequency voltage is supplied to the antenna through a through hole provided near the center of the dielectric plate. The high frequency voltage is supplied at a part different from the center and the periphery of the dielectric plate. Through the evenly arranged through holes,
The plasma processing method according to claim 30, wherein the antenna and the vacuum vessel are short-circuited by a short pin. 32. The substrate is processed in a state where the plasma distribution on the substrate is controlled by an annular and groove-shaped plasma trap provided between the antenna and the vacuum vessel. The plasma processing method as described above. 33. A turbo-molecular pump for evacuating a vacuum container is disposed immediately below the substrate electrode, and
30. The plasma processing method according to claim 29, wherein an exhaust port is located on a side of the vacuum container separated into two regions where no substrate is provided. 34. A pressure regulating valve for controlling the vacuum vessel to a predetermined pressure is an elevating valve located immediately below the substrate electrode and immediately above the turbo molecular pump, and the vacuum vessel is divided into two regions. 34. The plasma processing method according to claim 33, wherein the pressure regulating valve is located on the side where no substrate is provided. 35. The plasma processing method according to claim 29, wherein the pressure on the side of the vacuum vessel separated into the two regions where the substrate is located is 10 Pa or less. 36. The plasma processing method according to claim 29, wherein the pressure on the side of the vacuum vessel separated into the two regions where the substrate is located is 1 Pa or less. 37. The plasma processing method according to claim 29, wherein the frequency of the high-frequency power applied to the antenna is 50 MHz to 3 GHz. 38. When the hole pitch of the porous conductor is p, the frequency of the high-frequency power applied to the antenna is f, and the light speed is c, the relational expression of p <0.002 × c / f is satisfied. The plasma processing method according to claim 29. 39. When the hole pitch of the porous conductor is p, the frequency of the high-frequency power applied to the antenna is f, and the speed of light is c, the relational expression of p <0.0005 × c / f is satisfied. The plasma processing method according to claim 29. 40. The inner wall of the vacuum chamber is covered with the inner chamber, and the inner chamber is opened from the opening of the inner chamber.
30. The plasma processing method according to claim 29, wherein the downstream side from the opening of the inner chamber is grounded so that the electromagnetic wave does not leak to the side of the vacuum vessel separated into two regions where the substrate does not exist. 41. A vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a pressure regulating valve for controlling the inside of the vacuum container to a predetermined pressure. A substrate electrode for placing the substrate in a vacuum vessel, an antenna provided to face the substrate electrode, and a high-frequency power supply capable of supplying high-frequency power having a frequency of 100 kHz to 3 GHz to the antenna. A plasma processing apparatus, characterized in that a vacuum vessel is grounded, and the vacuum vessel is separated into a side without a substrate and a side without a substrate by a porous conductor whose outer peripheral portion is almost entirely grounded. Processing equipment. 42. The plasma processing apparatus according to claim 41, wherein a dielectric plate is sandwiched between the antenna and the vacuum container, and the antenna and the dielectric plate have a structure protruding into the vacuum container. 43. A high-frequency voltage is supplied to the antenna through a through hole provided near the center of the dielectric plate, provided at a part different from the center and the periphery of the dielectric plate, and substantially with respect to the center of the antenna. Through the evenly arranged through holes,
43. The plasma processing apparatus according to claim 42, wherein the antenna and the vacuum vessel are short-circuited by a short pin. 44. The plasma processing apparatus according to claim 42, wherein an annular and groove-shaped plasma trap provided between the antenna and the vacuum vessel is provided. 45. A turbo-molecular pump for evacuating the vacuum vessel is disposed immediately below the substrate electrode, and
42. The plasma processing apparatus according to claim 41, wherein an exhaust port is located on a side of the vacuum container separated into two regions where no substrate is provided. 46. A pressure regulating valve for controlling a vacuum vessel to a predetermined pressure is an elevating valve located immediately below a substrate electrode and immediately above a turbo molecular pump, and a vacuum vessel divided into two regions. 46. The plasma processing apparatus according to claim 45, wherein the pressure regulating valve is located on the side where no substrate is provided. 47. The plasma processing apparatus according to claim 41, wherein the frequency of the high-frequency power applied to the antenna is 50 MHz to 3 GHz. 48. When the hole pitch of the porous conductor is p, the frequency of the high-frequency power applied to the antenna is f, and the speed of light is c, the relational expression of p <0.002 × c / f is satisfied. The plasma processing apparatus according to claim 41. 49. When the hole pitch of the porous conductor is p, the frequency of the high-frequency power applied to the antenna is f, and the speed of light is c, the relational expression p <0.0005 × c / f is satisfied. The plasma processing apparatus according to claim 41. 50. The inner wall of the vacuum chamber is covered with the inner chamber, and the inner chamber is opened from the opening of the inner chamber.
42. The plasma processing apparatus according to claim 41, wherein the downstream side from the opening of the inner chamber is grounded so that the electromagnetic wave does not leak to the side of the vacuum vessel separated into two regions without the substrate. 51. A vacuum vessel is evacuated while supplying gas into a grounded vacuum vessel, and the vacuum vessel is opposed to a substrate mounted on a substrate electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. A plasma processing method for generating plasma in a vacuum vessel and processing a substrate by applying high-frequency power having a frequency of 100 kHz to 3 GHz to an antenna provided as described above, wherein substantially all of the outer peripheral portion is grounded. The vacuum container is separated into a side with a substrate and a side without a substrate by a plurality of layers of porous conductors,
A plasma processing method, wherein a substrate is processed in a state where plasma does not flow around a side where no substrate is provided. 52. A turbo-molecular pump for evacuating a vacuum container is disposed immediately below the substrate electrode, and
52. The plasma processing method according to claim 51, wherein an exhaust port is located on a side of the vacuum vessel separated into two regions where no substrate is provided. 53. A pressure regulating valve for controlling a vacuum vessel to a predetermined pressure is an elevating valve located immediately below a substrate electrode and immediately above a turbo-molecular pump, and a vacuum vessel divided into two regions. 53. The plasma processing method according to claim 52, wherein the pressure regulating valve is located on the side where no substrate is provided. 54. The plasma processing method according to claim 51, wherein the pressure on the side where the substrate of the vacuum vessel is divided into two regions is 10 Pa or less. 55. The plasma processing method according to claim 51, wherein the frequency of the high-frequency power applied to the antenna is 50 MHz to 3 GHz. 56. The inner wall of the vacuum vessel is covered by the inner chamber, and the electromagnetic wave does not leak from the gap between the inner chamber and the inner wall of the vacuum vessel to the side of the vacuum vessel separated into two regions without the substrate. The ground downstream of the opening of the inner chamber is grounded.
2. The plasma processing method according to 1. 57. The plasma processing method according to claim 51, wherein a distance between the plurality of layers of the porous conductor is 3 mm to 20 mm. 58. Each of the plurality of porous conductors has an aperture ratio of 5
The plasma processing method according to claim 51, wherein the amount is 0% or more. 59. A vacuum vessel is evacuated while supplying gas to a grounded vacuum vessel, and the vacuum vessel is controlled to a predetermined pressure while facing a substrate placed on a substrate electrode in the vacuum vessel. A plasma processing method for generating plasma in a vacuum vessel and processing a substrate by applying high-frequency power having a frequency of 100 kHz to 3 GHz to an antenna provided as described above, wherein substantially all of the outer peripheral portion is grounded. A plasma processing method, wherein a vacuum vessel is separated into a side with a substrate and a side without a substrate by a porous conductor and a porous electromagnetic wave absorber, and the substrate is processed in a state where plasma does not flow around the side without the substrate. . 60. A porous conductor faces the side of the vacuum vessel divided into two regions where the substrate is located, and the porous electromagnetic wave absorber faces the side of the vacuum vessel divided into two regions and has no substrate. 60. The plasma processing method according to claim 59, wherein: 61. A turbo-molecular pump for evacuating a vacuum vessel is disposed immediately below the substrate electrode, and
60. The plasma processing method according to claim 59, wherein an exhaust port is located on a side of the vacuum container separated into two regions where no substrate is provided. 62. A pressure regulating valve for controlling the vacuum vessel to a predetermined pressure is an elevating valve located immediately below the substrate electrode and immediately above the turbo molecular pump, and the vacuum vessel is divided into two regions. 62. The plasma processing method according to claim 61, wherein the pressure regulating valve is located on the side where no substrate is provided. 63. The plasma processing method according to claim 59, wherein the pressure on the side of the vacuum vessel separated into the two regions where the substrate is located is 10 Pa or less. 64. The plasma processing method according to claim 59, wherein the frequency of the high frequency power applied to the antenna is 50 MHz to 3 GHz. 65. The inner wall of the vacuum vessel is covered with the inner chamber, and the electromagnetic wave does not leak from the gap between the inner chamber and the inner wall of the vacuum vessel to the side of the vacuum vessel separated into two regions without the substrate. The ground downstream of the opening of the inner chamber is grounded.
10. The plasma processing method according to item 9. 66. The plasma processing method according to claim 59, wherein a distance between the porous conductor and the porous electromagnetic wave absorber is 3 mm to 20 mm. 67. The aperture ratio of each of the porous conductor and the porous electromagnetic wave absorber is 50% or more.
10. The plasma processing method according to item 9. 68. A grounded vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a device for controlling the inside of the vacuum container to a predetermined pressure. A pressure regulating valve, a substrate electrode for mounting the substrate in a vacuum vessel, an antenna provided to face the substrate electrode, and a high-frequency power supply capable of supplying high-frequency power having a frequency of 100 kHz to 3 GHz to the antenna. A plasma processing apparatus, comprising: a vacuum container that is separated into a side with a substrate and a side without a substrate by a plurality of layers of porous conductors, the outer periphery of which is substantially grounded. apparatus. 69. A turbo-molecular pump for evacuating a vacuum vessel is disposed immediately below the substrate electrode, and
70. The plasma processing apparatus according to claim 68, wherein an exhaust port is located on a side of the vacuum vessel separated into two regions where no substrate is provided. 70. A pressure regulating valve for controlling the vacuum vessel to a predetermined pressure is an elevating valve located immediately below the substrate electrode and immediately above the turbo molecular pump, and the vacuum vessel is divided into two regions. 70. The plasma processing apparatus according to claim 69, wherein a pressure regulating valve is located on a side where no substrate is provided. 71. The plasma processing apparatus according to claim 68, wherein the frequency of the high-frequency power applied to the antenna is 50 MHz to 3 GHz. 72. The inner wall of the vacuum chamber is covered with the inner chamber, and the electromagnetic wave does not leak from the gap between the inner chamber and the inner wall of the vacuum chamber to the side of the vacuum vessel separated into two regions without the substrate. 7. The method according to claim 6, wherein the downstream side of the opening of the inner chamber is grounded.
9. The plasma processing apparatus according to 8. 73. The plasma processing apparatus according to claim 68, wherein the distance between the plurality of layers of the porous conductor is 3 mm to 20 mm. 74. A plurality of porous conductors each having an aperture ratio of 5
70. The plasma processing apparatus according to claim 68, wherein the value is 0% or more. 75. A grounded vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and a device for controlling the inside of the vacuum container to a predetermined pressure. A pressure regulating valve, a substrate electrode for mounting the substrate in a vacuum vessel, an antenna provided to face the substrate electrode, and a high-frequency power supply capable of supplying high-frequency power having a frequency of 100 kHz to 3 GHz to the antenna. Wherein the vacuum vessel is separated into a side with a substrate and a side without a substrate by a porous conductor having substantially the entire outer periphery grounded, and a porous radio wave absorber. Plasma processing equipment. 76. The porous conductor faces the side of the vacuum vessel separated into two regions with the substrate, and the porous electromagnetic wave absorber faces the side of the vacuum vessel separated into the two regions without the substrate. The plasma processing apparatus according to claim 75, wherein: 77. A turbo-molecular pump for evacuating the vacuum container is disposed immediately below the substrate electrode, and
76. The plasma processing apparatus according to claim 75, wherein an exhaust port is located on a side of the vacuum vessel separated into two regions where no substrate is provided. 78. A pressure regulating valve for controlling the vacuum vessel to a predetermined pressure is an elevating valve located immediately below the substrate electrode and immediately above the turbo molecular pump, and the vacuum vessel is divided into two regions. 78. The plasma processing apparatus according to claim 77, wherein the pressure regulating valve is located on the side where no substrate is provided. 79. The plasma processing apparatus according to claim 75, wherein the frequency of the high-frequency power applied to the antenna is 50 MHz to 3 GHz. 80. An electromagnetic wave does not leak from the gap between the inner chamber and the inner wall surface of the vacuum vessel to the side without the substrate of the vacuum vessel separated into two regions from the gap between the inner chamber and the inner wall surface of the vacuum vessel. 8. The method according to claim 7, wherein the downstream side of the opening of the inner chamber is grounded.
6. The plasma processing apparatus according to 5. 81. The plasma processing apparatus according to claim 75, wherein a distance between the porous conductor and the porous electromagnetic wave absorber is 3 mm to 20 mm. 82. The aperture ratio of each of the porous conductor and the porous electromagnetic wave absorber is 50% or more.
6. The plasma processing apparatus according to 5.