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JP2002202514A - Liquid crystal panel, method for manufacturing the same, and apparatus for manufacturing the same - Google Patents

Liquid crystal panel, method for manufacturing the same, and apparatus for manufacturing the same

Info

Publication number
JP2002202514A
JP2002202514A JP2000400379A JP2000400379A JP2002202514A JP 2002202514 A JP2002202514 A JP 2002202514A JP 2000400379 A JP2000400379 A JP 2000400379A JP 2000400379 A JP2000400379 A JP 2000400379A JP 2002202514 A JP2002202514 A JP 2002202514A
Authority
JP
Japan
Prior art keywords
liquid crystal
sealing material
substrate
crystal panel
ultraviolet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000400379A
Other languages
Japanese (ja)
Inventor
Satoshi Yamada
聡 山田
Yoshiteru Yamada
佳照 山田
Hideki Matsukawa
秀樹 松川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2000400379A priority Critical patent/JP2002202514A/en
Publication of JP2002202514A publication Critical patent/JP2002202514A/en
Pending legal-status Critical Current

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

(57)【要約】 (修正有) 【課題】 カラー反射型液晶パネルにおけるシール材の
紫外線硬化を容易にする。 【解決手段】 対向する2枚の基板2−1,2−3を接
着し、液晶2−6を封入するための紫外線硬化型シール
材2−8を形成する工程と、シール材2−8を形成した
基板と対向する基板の位置合わせを行ったあと2枚の基
板を貼り合わせる工程と、所定のギャップとなるように
貼り合わせた基板を加圧する工程と、シール部分以外を
遮光し、基板の温度を40℃以上80℃以下の温度範囲
内で調整しシール部分に紫外線を照射する工程と、必要
な端子部分を残して割断し液晶セルを作成する工程とを
有することを特徴とする液晶パネルの製造方法。
(57) [Summary] (with correction) [PROBLEMS] To facilitate ultraviolet curing of a sealing material in a color reflective liquid crystal panel. SOLUTION: A step of bonding two opposing substrates 2-1 and 2-3 to form an ultraviolet-curable sealing material 2-8 for enclosing a liquid crystal 2-6, and a method of forming the sealing material 2-8. After aligning the formed substrate and the opposing substrate, bonding the two substrates, pressing the bonded substrates so as to have a predetermined gap, shielding the portions other than the seal portion from light, A liquid crystal panel comprising: a step of adjusting the temperature within a temperature range of 40 ° C. or more and 80 ° C. or less and irradiating a seal portion with ultraviolet rays; and a step of forming a liquid crystal cell by cutting and leaving a necessary terminal portion. Manufacturing method.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液晶パネルの製造
方法に関する。
The present invention relates to a method for manufacturing a liquid crystal panel.

【0002】[0002]

【従来の技術】2枚の電極付き基板の間隙に液晶を封入
してなる液晶パネルの製造方法に関しては2枚の基板を
接着し、液晶を封入する目的で使用されているシール材
には1液タイプの熱硬化型エポキシ樹脂(三井東圧化学
工業製“ストラクトボンドXN−21−S”、協立化学
産業株式会社製“ワールドロック780−B−B”がよ
く知られている。
2. Description of the Related Art With respect to a method of manufacturing a liquid crystal panel in which liquid crystal is sealed in a gap between two substrates with electrodes, one sealing material is used for bonding two substrates and sealing the liquid crystal. Liquid-type thermosetting epoxy resins (“Structobond XN-21-S” manufactured by Mitsui Toatsu Chemicals, Inc., and “World Lock 780-BB” manufactured by Kyoritsu Chemical Industries Co., Ltd.) are well known.

【0003】この熱硬化型エポキシ樹脂を成分とするシ
ール材は、基盤を貼り合せた後に行う熱硬化の工程で、
過熱の初期の段階でシール材のシール材の粘度が低下す
ることから基板の位置合わせ精度の低下、シールの線切
れ、シールの浮き上がりによるギャップ不良といった課
題が発生する。また、熱硬化には1時間程度必要なこと
から生産効率の低下,、さらにはマザー基板の大型化に
伴い熱硬化設備の大型化が発生する。
[0003] The sealing material containing the thermosetting epoxy resin as a component is subjected to a thermosetting process performed after the substrates are bonded together.
Since the viscosity of the sealing material decreases in the initial stage of the overheating, problems such as a decrease in the positioning accuracy of the substrate, breakage of the seal line, and gap failure due to the floating of the seal occur. In addition, since about one hour is required for thermosetting, the production efficiency is reduced, and the size of the thermosetting equipment is increased due to the increase in the size of the mother substrate.

【0004】こうした課題を解決するにあたり紫外線硬
化型のシール材を採用する方法が考えられる。紫外線硬
化型シール材に関しては、一般的にカチオン重合とラジ
カル重合の2種類がある。前者のカチオン重合はエポキ
シ樹脂の硬化機構であり、ラジカル重合はメタクリル、
あるいはアクリル樹脂の硬化機構である。ここでカチオ
ン重合であるエポキシ樹脂は、接着性、体質性に関して
優れているが、光開始剤にカチオン系のイオン性の高い
ものを使用するため、液晶への信頼性が低い。従って、
カチオン重合であるエポキシ樹脂を成分とした紫外線硬
化型シール剤の使用は困難である。この紫外線硬化型エ
ポキシ樹脂に対し、紫外線硬化型メタクリル、アクリル
系樹脂はラジカル重合体であり、使用する光開始剤のイ
オン性が低いことから、前記滴下工法での使用も可能で
ある。従って一般的に紫外線硬化型シール材としてはこ
のラジカル重合体のメタクリル、アクリル樹脂を使用す
る。
In order to solve such a problem, a method using an ultraviolet-curable sealing material is considered. In general, there are two types of UV-curable sealing materials: cationic polymerization and radical polymerization. The former cationic polymerization is a curing mechanism of epoxy resin, and the radical polymerization is methacryl,
Or it is a curing mechanism of an acrylic resin. Here, the epoxy resin, which is a cationic polymerization, is excellent in adhesiveness and constitutional properties, but has low reliability in liquid crystal since a photoinitiator of high cationic ionicity is used. Therefore,
It is difficult to use an ultraviolet-curable sealant containing an epoxy resin that is a cationic polymerization as a component. In contrast to this UV-curable epoxy resin, UV-curable methacrylic and acrylic resins are radical polymers, and the ionicity of the photoinitiator used is low, so that they can be used in the dropping method. Therefore, in general, methacryl or acrylic resin of this radical polymer is used as an ultraviolet-curable sealing material.

【0005】液晶パネルの製造方法に関しては、一対の
電極を形成した基板に、ポリイミド樹脂からなる配向膜
を形成し、ラビングといわれる、布で配向膜表面をこす
ることにより液晶の配向方向を決定する工程を行う。こ
うして配向処理を施した基板に前記紫外線硬化型シール
材を、スクリーン印刷、及びディスペンサーによる描画
塗布によって、所定のパターンとなるよう形成する。そ
して他方の基板には基板間のギャップを形成するための
スペーサー材を配置する。このスペーサー材は樹脂製の
ビーズが主に使用されているが、最近では基板上に樹脂
製の柱を形成したものも使用されている。この2枚の基
板の位置合わせを行い貼り合せ、2枚の基板間が所定の
ギャップとなるまで加圧する。その後、シール部分以外
の領域を遮光してシール部分のみ紫外線を照射しシール
の硬化を行う。そして貼り合せし接着した2枚の基板の
中で不必要な部分を割断し液晶セルを作成する。なお、
基板を貼り合せる前に液晶材料をシール材で囲まれた領
域内に必要量だけ滴下供給し、2枚の基板を0.8To
rr以下の減圧下で位置合せを行い貼り合せる滴下工法
も液晶セルの製造方法としてはよく知られている。
With respect to a method of manufacturing a liquid crystal panel, an orientation film made of a polyimide resin is formed on a substrate on which a pair of electrodes are formed, and the orientation direction of the liquid crystal is determined by rubbing the surface of the orientation film with a cloth called rubbing. Is performed. The ultraviolet-curable sealing material is formed on the substrate subjected to the orientation treatment in a predetermined pattern by screen printing and drawing application using a dispenser. Then, a spacer material for forming a gap between the substrates is arranged on the other substrate. As the spacer material, resin beads are mainly used, but recently, resin pillars formed on a substrate are also used. The two substrates are aligned and bonded, and pressure is applied until a predetermined gap is formed between the two substrates. After that, an area other than the seal portion is shielded from light, and only the seal portion is irradiated with ultraviolet rays to cure the seal. Unnecessary portions are cut off between the two substrates bonded together to form a liquid crystal cell. In addition,
Before bonding the substrates, the required amount of the liquid crystal material is dropped and supplied into the area surrounded by the sealing material, and the two substrates are set to 0.8 Ton.
A dropping method of performing alignment and bonding under a reduced pressure of rr or less is also well known as a method of manufacturing a liquid crystal cell.

【0006】[0006]

【発明が解決しようとする課題】これまで紫外線硬化型
のシール材を使用する場合、シール部分には紫外線が照
射されなければならない。従って、必然的に電極部はI
TOのような透明電極で形成された基板、もしくは、カ
ラーフィルターが形成された基板では、そのブラックマ
トリクスの外周部にシールが形成されたパネルでなけれ
ば不可能であった。現在では、TFTが形成された液晶
パネルが安価に製造できることから市場での要求が増加
している。また、このTFTを形成した液晶パネルも用
途の多様化に伴い、周辺部の狭額縁化が通常化してい
る。さらに、STNでも携帯用の省電力液晶パネルとし
てカラーで反射型の液晶パネルの要求が増加している。
こうした液晶パネルのニーズの中で、TFT、及びST
Nカラー反射型の液晶パネルでは、電極がAlで形成さ
れ紫外線を完全に遮光してしまう。またカラー化と狭額
縁化に伴い、シールの形成位置はカラーフィルターのブ
ラックマトリクス上となってしまう。こうした液晶パネ
ル構成の中でシール材の紫外線硬化が非常に困難とな
る。
In the case where an ultraviolet-curable sealing material has been used, the sealing portion must be irradiated with ultraviolet light. Therefore, the electrode part is inevitably I
In the case of a substrate formed of a transparent electrode such as TO, or a substrate formed with a color filter, it was not possible unless the panel had a seal formed on the outer periphery of the black matrix. At present, demands on the market are increasing because liquid crystal panels on which TFTs are formed can be manufactured at low cost. Also, with the diversification of uses of liquid crystal panels on which the TFTs are formed, the frame of the peripheral portion is usually narrowed. Further, in STN, there is an increasing demand for a color reflective liquid crystal panel as a portable power saving liquid crystal panel.
Among these needs for liquid crystal panels, TFT and ST
In an N-color reflection type liquid crystal panel, the electrodes are formed of Al, which completely shields ultraviolet rays. In addition, with the colorization and narrowing of the frame, the position where the seal is formed will be on the black matrix of the color filter. In such a liquid crystal panel configuration, it is very difficult to cure the sealant with ultraviolet light.

【0007】この場合、Alの電極側から紫外線をシー
ル部分に照射しシール材を硬化しなければならない。現
状でAlの電極の幅は50μmから100μm程度であ
り、電極間のスペース部分は5μmから20μm程度で
ある。こうしたパターンのもと配線の影になる部分でも
十分シール材の重合が行われるための紫外線照射条件、
及びシール材料が必要となる。
In this case, the sealing material must be cured by irradiating ultraviolet rays to the sealing portion from the Al electrode side. At present, the width of the Al electrode is about 50 μm to 100 μm, and the space between the electrodes is about 5 μm to 20 μm. UV irradiation conditions for sufficiently polymerizing the sealing material even in the shadow of the wiring under such a pattern,
And a sealing material is required.

【0008】本発明は、基板の貼り合せ精度、及び生産
性の向上を図ることが可能な紫外線硬化型のシール材を
使用する液晶パネルの製造方法に関し、狭額縁化したカ
ラーTFT液晶パネルや反射型カラーSTNパネルに対
応できる液晶パネルの製造方法を提供することを目的と
する。
The present invention relates to a method of manufacturing a liquid crystal panel using an ultraviolet-curable sealing material capable of improving the bonding accuracy of a substrate and the productivity, and relates to a color TFT liquid crystal panel having a narrow frame and a reflective TFT. It is an object of the present invention to provide a method of manufacturing a liquid crystal panel that can support a color STN panel.

【0009】[0009]

【課題を解決するための手段】上記課題を解決するにあ
たり、本発明の液晶パネルの製造方法の中で,特にシー
ル材の紫外線硬化工程に関して、紫外線を照射する際の
基板の温度を調整することにより達成できる。このとき
基板の温度は40℃以上80℃以下で適宜選択する。通
常紫外線照射時の基板温度が高いほどシールの重合は促
進される。しかし滴下工法を採用する際には、紫外線照
射時の温度が高いと十分に硬化していないシール材から
液晶中にシール組成分の溶出による表示品位の低下、及
びギャップ高やシール切れによる歩留まりの低下が起こ
る。
In order to solve the above-mentioned problems, in the method of manufacturing a liquid crystal panel of the present invention, the temperature of the substrate when irradiating ultraviolet rays is adjusted, particularly in the step of curing the sealing material with ultraviolet rays. Can be achieved by At this time, the temperature of the substrate is appropriately selected from 40 ° C. to 80 ° C. In general, the higher the substrate temperature during ultraviolet irradiation, the more the polymerization of the seal is promoted. However, when adopting the dripping method, if the temperature at the time of UV irradiation is high, the display quality is degraded due to the elution of the sealing composition from the sealing material that is not sufficiently cured into the liquid crystal, and the yield due to the gap height and the breakage of the seal is reduced. A drop occurs.

【0010】この場合は、基板の温度を時間とともに上
昇させるか、ステージを2段階に分割し、第1のステー
ジで低温度でシールに紫外線照射を行い、第2のステー
ジで高い温度で紫外線照射を行い十分にシールを硬化す
る方法を採用すれば解決できる。
In this case, the temperature of the substrate is increased with time, or the stage is divided into two stages, the first stage is irradiated with ultraviolet rays at a low temperature to the seal, and the second stage is irradiated with ultraviolet rays at a high temperature. This can be solved by adopting a method in which the seal is sufficiently cured.

【0011】この紫外線照射時の基板の温度を調整する
方法としては、ホットプレート、温風循環、紫外線吸収
によるマスク基板の温度上昇のいずれを採用してもよ
い。
As a method of adjusting the temperature of the substrate during the irradiation of the ultraviolet rays, any of a hot plate, circulation of warm air, and an increase in the temperature of the mask substrate due to absorption of the ultraviolet rays may be employed.

【0012】つぎに、上記条件のもと使用する紫外線硬
化方シール材に関して、樹脂成分にはメタクリル、アク
リル系いずれかの樹脂を主材とする。主にエポキシアク
リレートのオリゴマーと粘度調整用のモノマーを適宜配
合した成分を使用することが望ましい。この主材に対し
て光開始剤を1wt%から3wt%の範囲内で適宜配合
する。また、光開始剤としてチオキサンソン系のものを
1wt%から3wt%の範囲内で適宜配合する。ここで
光開始剤としては、アセトフェノン系、ベンゾイン系、
ベンゾフェノン系のいずれかから選択すればよいが、特
にベンゾイン系の光開始剤が望ましい。なお、シール材
に関しては粘度調整用としてフィラー材、基板との密着
性向上のためにシラン系カップリング材を適宜配合する
ことが望ましい。
Next, with respect to the ultraviolet-curing sealing material used under the above conditions, the resin component is mainly made of either methacryl or acrylic resin. It is desirable to use a component obtained by appropriately mixing an epoxy acrylate oligomer and a viscosity adjusting monomer. A photoinitiator is appropriately added to the main material in a range of 1 wt% to 3 wt%. Also, a thioxanthone-based photoinitiator is appropriately blended within a range of 1 wt% to 3 wt%. Here, as a photoinitiator, acetophenone type, benzoin type,
Any one of benzophenone-based photoinitiators may be selected, but a benzoin-based photoinitiator is particularly desirable. In addition, as for the sealing material, it is desirable to appropriately mix a filler material for adjusting the viscosity and a silane coupling material for improving the adhesion to the substrate.

【0013】本発明による液晶パネルの製造方法に関し
て、紫外線硬化型のメタクリル、アクリル系シール材の
紫外線照射工程で、紫外線照射時の基板の温度を調整す
ることにより、狭額縁設計のTFT液晶パネル、反射型
カラーSTNパネルといった電極成分がAlのような遮
光される材質で形成された液晶パネルでもシール材の紫
外線硬化が可能であり、今後のパネル設計に大きな負担
をかけることなく液晶パネルの生産が可能となる。
In the method of manufacturing a liquid crystal panel according to the present invention, in a step of irradiating an ultraviolet curable methacrylic or acrylic sealing material with an ultraviolet ray, the temperature of the substrate at the time of irradiating the ultraviolet ray is adjusted, whereby a TFT liquid crystal panel having a narrow frame design can be obtained. Even a liquid crystal panel such as a reflective color STN panel whose electrode component is formed of a light-shielding material such as Al can cure the sealant with ultraviolet light, and the production of the liquid crystal panel can be performed without imposing a large burden on future panel design. It becomes possible.

【0014】ここでシール材への紫外線照射時の基板温
度は、40℃から80℃の範囲で任意に選択すればよ
い。通常シール材の紫外線硬化のみであれば基板の温度
を高く設定すればよりシール材の硬化は促進される。た
だ滴下工法を採用した場合、シール材への紫外線照射時
の基板温度が80℃を超えると、液晶の相転移温度以上
となり、液晶が等方相となりシール材成分の溶解性が高
くなる。また液晶の体積も増加することからシール材の
高さも変化する。よって紫外線照射時の基板の温度は8
0度以下が望ましい。
Here, the substrate temperature when irradiating the sealing material with ultraviolet rays may be arbitrarily selected within a range of 40 ° C. to 80 ° C. Usually, if only the ultraviolet curing of the sealing material is performed, the curing of the sealing material is further promoted by setting the temperature of the substrate high. However, when the dropping method is adopted, if the substrate temperature at the time of irradiating the sealing material with ultraviolet rays exceeds 80 ° C., the temperature becomes higher than the phase transition temperature of the liquid crystal, the liquid crystal becomes an isotropic phase, and the solubility of the sealing material component increases. In addition, since the volume of the liquid crystal increases, the height of the sealing material also changes. Therefore, the temperature of the substrate at the time of ultraviolet irradiation is 8
It is desirably 0 degrees or less.

【0015】また、シール硬化に使用する紫外線は31
0nm以下の波長をカットする必要性がある。これは紫
外線による液晶へのダメージを防止するためである。従
ってシール硬化に使用する紫外線としては、波長領域が
310nm以上400nm以下で、照度が10mw/c
2以上で、積算光量として3000mJ/cm2以上が
必要となる。この条件範囲の中で照度が最も大きい30
mw/cm2で積算光量3000mJ/cm2 を達成す
る場合照射時間が100秒となる。このとき設定した基
板温度のキープ時間は100秒から基板が上昇するまで
の時間を引き算した時間となる。基板の面積が約250
000mm2から約640000mm2で、基板の厚みが
約1mmから約0.5mmのとき、この基板を2枚重ね
て基板の温度が80℃まで達するのに約10秒から約2
0秒しかかからないことから十分所定の温度での紫外線
照射が可能である。
The ultraviolet light used for curing the seal is 31.
There is a need to cut wavelengths below 0 nm. This is to prevent the liquid crystal from being damaged by ultraviolet rays. Therefore, the ultraviolet light used for curing the seal has a wavelength range of 310 nm to 400 nm and an illuminance of 10 mw / c.
m 2 or more, an integrated light amount of 3000 mJ / cm 2 or more is required. In this condition range, the illuminance is the largest 30.
mw / cm 2 in achieving irradiation time the accumulated quantity of light 3000 mJ / cm 2 at is 100 seconds. At this time, the keeping time of the set substrate temperature is a time obtained by subtracting the time required for the substrate to rise from 100 seconds. The substrate area is about 250
000 mm 2 to about 640000 mm 2 , and when the thickness of the substrate is about 1 mm to about 0.5 mm, it is required that the two substrates are stacked and the temperature of the substrate reaches 80 ° C. for about 10 seconds to about 2 seconds.
Since it takes only 0 seconds, it is possible to sufficiently irradiate ultraviolet rays at a predetermined temperature.

【0016】以上、本発明によるシール材の紫外線硬化
方法によりアライメント精度が高く、電極部が遮光され
た場合でもシール材の十分な硬化が可能になることか
ら、表示品位の高い液晶パネルを生産できる液晶パネル
の製造方法を提供できる。
As described above, the ultraviolet curing method for a seal material according to the present invention has high alignment accuracy and allows the seal material to be sufficiently cured even when the electrode portion is shielded from light, so that a liquid crystal panel with high display quality can be produced. A method for manufacturing a liquid crystal panel can be provided.

【0017】[0017]

【実施の形態】本発明の液晶パネルの製造方法に関し
て、液晶を封入するとともに2枚の基板を接着するため
のシール材が紫外線硬化型で、このシール材を紫外線照
射すると同時に加熱することが特徴である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a liquid crystal panel according to the present invention is characterized in that a sealing material for enclosing liquid crystal and bonding two substrates is an ultraviolet curing type, and this sealing material is heated simultaneously with irradiation of ultraviolet light. It is.

【0018】ここで使用した紫外線硬化型シール材の組
成に関して説明すると、主材としてエポキシアクリレー
トオリゴマーと3官能アクリレートモノマー、フィラー
材にタルクとシリカ系微粉末、シランカップリング剤、
光開始剤としてベンゾイン系を1から3wt%配合した
ものを使用した。
The composition of the ultraviolet-curable sealing material used here will be described. The main components are epoxy acrylate oligomer and trifunctional acrylate monomer, talc and silica fine powder as filler material, silane coupling agent,
A photoinitiator containing 1 to 3 wt% of a benzoin compound was used.

【0019】基板は、面積が約250000mm2から
約640000mm2で、基板の厚みが約1mmから約
0.5mmの形状の範囲であればよいが、本実施例で
は、基板の寸法が、550mm×670mmで、基板の
厚みが0.7mmである。
The substrate may have an area of about 250,000 mm 2 to about 640000 mm 2 and a thickness of the substrate in a range of about 1 mm to about 0.5 mm. In this embodiment, the size of the substrate is 550 mm × 670 mm and the thickness of the substrate is 0.7 mm.

【0020】次に上記シール剤を硬化するための紫外線
照射方法を図面を用いて説明する。
Next, an ultraviolet irradiation method for curing the sealant will be described with reference to the drawings.

【0021】図1は今回採用した紫外線照射装置の概略
図で、ランプ1−1は高圧水銀ランプを使用し、310
nm以下をカットするガラス1−2を挿入することによ
りカットした。そして、ランプの波長領域が310nm
から400nmの範囲での照度が10から13mw/c
2となるように設定した。そして照射時間を10分、
つまり照射エネルギーとして6000から7800mJ
cm2とした。さらにシール部分以外には紫外線が照射
されないようマスク1−3をランプ1と基板1−4の間
にクリラランスが1mmとなるよう挿入した。使用する
マスク1−3の材質はテンパックスガラスで紫外線領域
の照度ロスは殆どない。そして基板の下には温度を調節
するためのホットプレート1−5を設置した。
FIG. 1 is a schematic view of the ultraviolet irradiation apparatus adopted this time. The lamp 1-1 uses a high-pressure mercury lamp,
Cutting was performed by inserting a glass 1-2 that cuts a size of nm or less. The wavelength range of the lamp is 310 nm
Illuminance in the range from to 400 nm is from 10 to 13 mw / c
m 2 . And the irradiation time is 10 minutes,
In other words, the irradiation energy is 6000 to 7800 mJ
cm 2 . Further, a mask 1-3 was inserted between the lamp 1 and the substrate 1-4 so that the clearance was 1 mm so that ultraviolet rays were not irradiated to portions other than the seal portion. The material of the mask 1-3 used is Tempax glass, and there is almost no illuminance loss in the ultraviolet region. Then, a hot plate 1-5 for adjusting the temperature was provided below the substrate.

【0022】[0022]

【実施例】以下、本発明の具体的な実施例と比較例を図
面を用いて説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Specific embodiments of the present invention and comparative examples will be described below with reference to the drawings.

【0023】まず図2にて今回作成した液晶パネルの断
面図を示す。一対の基板のうち、上野紫外線照射される
側の基板2−1には、スリット状に多層Cr層2−2が
設けられている。なお、下の基板2−3にはこの多層C
r2−2は形成していない。このスリットのパターンは
遮光部分が40μmと50μmの2種類、スペース部分
が5μm、10μm、20μmの3種類合計6種類のパ
ターンを準備した。そして上下の基板に対向するように
ITOによる透明電極2−4を設置する。そしてこの電
極上のポリイミド性の配向膜2−5を形成する。そして
この配向膜2−5はラビングによって液晶2−6のネジ
レ角度が90度となるように配向処理が施されている。
さらに2枚の基板のギャップを形成するためのスペーサ
ー用の樹脂ビーズ2−7が配置されている。今回このビ
ーズ2−7は粒径が4.5μmで密度が100個/mm
2となるように配置した。そして液晶2−6を封入し2
枚の基板を接着するためのアクリル系の紫外線硬化型シ
ール材2−8が多層Crの下部に設置されている。
FIG. 2 is a sectional view of the liquid crystal panel prepared this time. Of the pair of substrates, the substrate 2-1 on the side irradiated with Ueno ultraviolet rays is provided with a multilayer Cr layer 2-2 in a slit shape. The lower substrate 2-3 has this multilayer C
r2-2 is not formed. A total of six types of slit patterns were prepared, two types of light shielding portions of 40 μm and 50 μm, and three types of space portions of 5 μm, 10 μm and 20 μm. Then, a transparent electrode 2-4 made of ITO is provided so as to face the upper and lower substrates. Then, a polyimide alignment film 2-5 on this electrode is formed. The alignment film 2-5 is subjected to an alignment process by rubbing so that the twist angle of the liquid crystal 2-6 becomes 90 degrees.
Further, spacer resin beads 2-7 for forming a gap between the two substrates are arranged. This time, the beads 2-7 have a particle size of 4.5 μm and a density of 100 beads / mm.
Arranged to be 2 . Then, the liquid crystal 2-6 is sealed and 2
An acrylic UV-curable sealing material 2-8 for bonding two substrates is provided below the multilayer Cr.

【0024】次に、前記液晶パネルの評価結果を1に示
す。評価項目としてはシール材の配向異常の幅と5Vで
30Hzのパルス波を液晶に印加したときの液晶の電圧
保持を表す電圧保持率を採用した。
Next, the evaluation result of the liquid crystal panel is shown in FIG. As the evaluation items, the width of the abnormal orientation of the sealing material and the voltage holding ratio representing the voltage holding of the liquid crystal when a pulse wave of 5 V and 30 Hz was applied to the liquid crystal were adopted.

【0025】まず従来例1としてエポキシ系の熱硬化型
シール材(三井東圧化学工業株式会社製“ストラクトボ
ンドXN−21−S”を使用した。さらに比較例1とし
て前記アクリル系紫外線硬化型シール材を用いて、紫外
線照射時の基板の温度が25℃、実施例1として基板の
温度が40℃、実施例2として60℃、実施例3として
80度の場合の結果を示す。なお、基板はホットプレー
トの温度を目的の温度に設定しその上にそのまま置い
た。従って基板は40℃には約5秒、60℃には約10
秒、80℃には約15秒で達する。ここで所定の温度の
保持時間は十分同等である。
First, as a conventional example 1, an epoxy thermosetting sealing material ("Stract Bond XN-21-S" manufactured by Mitsui Toatsu Chemicals, Inc.) was used. Using a material, the results are shown for the case where the temperature of the substrate during ultraviolet irradiation is 25 ° C., the temperature of the substrate is 40 ° C. for Example 1, 60 ° C. for Example 2, and 80 ° C. for Example 3. Set the temperature of the hot plate to the desired temperature and left it there, so the substrate was about 5 seconds at 40 ° C and about 10 seconds at 60 ° C.
Seconds, reaching 80 ° C. in about 15 seconds. Here, the holding time at the predetermined temperature is sufficiently equivalent.

【0026】この結果から比較例1では、シール材の配
向異常の幅が0.5mm以上で電圧保持率が90%程度
と従来例に比べ程度が低い。特にシール材の配向異常の
幅に関しては、液晶パネル構成によりシールからアクテ
ィブの距離が短くなっている。もし、この距離が最も短
くしても0.1mm程度となる。これはカラーフィルタ
ーのダミーパターンが必要でありこの幅が0.1mm程
度は必要なことからである。したがってシール材の配向
異常幅は0.1mm未満が必要となる。次に保持率に関
してであるが、液晶パネルの構成により程度の差はある
が、電圧保持率が90%以下となると、面内の焼き付
き、フリッカーといった表示品位に悪影響を及ぼす。従
って電圧保持率は90%以上が必要となる。また面内で
の輝度むらに関しても90%以上であれば問題ない。
From these results, in Comparative Example 1, the width of the abnormal orientation of the sealing material was 0.5 mm or more, and the voltage holding ratio was about 90%, which is lower than the conventional example. In particular, regarding the width of the orientation abnormality of the seal material, the active distance from the seal is reduced due to the liquid crystal panel configuration. If this distance is the shortest, it is about 0.1 mm. This is because a dummy pattern of a color filter is required, and the width is required to be about 0.1 mm. Therefore, the abnormal orientation width of the sealing material needs to be less than 0.1 mm. Next, with respect to the holding ratio, although the degree varies depending on the configuration of the liquid crystal panel, when the voltage holding ratio is 90% or less, display quality such as in-plane burn-in and flicker is adversely affected. Therefore, the voltage holding ratio needs to be 90% or more. Also, there is no problem with regard to in-plane luminance unevenness as long as it is 90% or more.

【0027】ここで、図3に紫外線照射時の各温度に対
する電極のスリット下のシール材重合度合いに関してラ
マン分光法により分析した結果を示す。このラマン分光
法での重合度合いの算出方法は、未硬化シール材の“C
=C”結合部分の吸収と紫外線照射時の温度が80℃で
照射エネルギーが6000mJ/cm2のときのシール
材の“C=C”結合部分の吸収との差を100として、
各ポジションのシール材の“C=C”結合部分の吸収の
割合を百分率で表した。
FIG. 3 shows the results of analysis by Raman spectroscopy on the degree of polymerization of the sealing material under the slit of the electrode with respect to each temperature at the time of ultraviolet irradiation. The method of calculating the degree of polymerization by Raman spectroscopy is based on “C
Assuming that the difference between the absorption of the “C = C” bonding portion and the absorption of the “C = C” bonding portion of the sealing material when the temperature at the time of ultraviolet irradiation is 80 ° C. and the irradiation energy is 6000 mJ / cm 2 ,
The percentage of absorption at the "C = C" bonded portion of the seal material at each position was expressed as a percentage.

【0028】この結果から、配線により影となっている
部分は、スペース部分に比べシールの重合度合いは20
%程度低いが、距離には大きく依存しない。ただし、照
射時の温度に対しては、スペース部分のシール材の重合
度合いが低下していくが、配線影とスペース部分とのシ
ール材重合度合いの差は大きく影響されない。表1での
実パネル評価からこのラマン分光法の重合度合いの求め
方から60%以上であれば使用上の問題はない。
From this result, it can be seen that the part shaded by the wiring has a degree of polymerization of the seal of 20 compared to the space part.
%, But does not largely depend on the distance. However, although the degree of polymerization of the sealing material in the space decreases with respect to the temperature at the time of irradiation, the difference in the degree of polymerization of the sealing material between the wiring shadow and the space is not significantly affected. From the evaluation of the actual panel in Table 1, the degree of polymerization obtained by Raman spectroscopy shows that there is no problem in use if the polymerization degree is 60% or more.

【0029】次に、表2に紫外線ランプの照度が30m
v/cm2の場合のシール材配向異常、電圧保持率の結
果を示す。ここで前記実施例3と、実施例4として基板
温度が40℃で照射時間が200秒、実施例5として基
板温度が40℃で照射時間が600秒、実施例6として
80℃で照射時間が200秒、実施例7として80℃で
照射時間が600秒の場合の結果を示す。なお、比較例
2として25℃で照射時間が200秒、比較例3として
25℃で照射時間が600秒の場合を示す。ここで照射
時間が200秒のとき照射エネルギーが6000mJ/
cm、600秒のとき18000mJ/cm2となる。
Next, Table 2 shows that the illuminance of the ultraviolet lamp is 30 m.
The results of the abnormal orientation of the sealing material and the voltage holding ratio in the case of v / cm 2 are shown. Here, the irradiation time was 200 seconds at a substrate temperature of 40 ° C. as Example 3 and Example 4, the irradiation time was 600 seconds at a substrate temperature of 40 ° C. as Example 5, and the irradiation time was 80 ° C. at Example 6 The results when the irradiation time is 200 seconds and the irradiation time is 600 seconds at 80 ° C. as Example 7 are shown. In addition, the irradiation time at 25 ° C. is 200 seconds as Comparative Example 2, and the irradiation time is 600 seconds at 25 ° C. as Comparative Example 3. Here, when the irradiation time is 200 seconds, the irradiation energy is 6000 mJ /
cm, 600 seconds, 18000 mJ / cm 2 .

【0030】この結果から基板温度が40℃で200秒
の場合でも周辺の配向状態は問題ない。しかし基板温度
が25℃の場合は照射時間が長くなると、若干の効果が
見られるが品質を満足させるだけのものではない。従っ
て紫外線照射時の基板の温度がシール材の硬化に大きな
影響を与えている。
From this result, even when the substrate temperature is 40 ° C. for 200 seconds, there is no problem in the peripheral orientation state. However, when the substrate temperature is 25 ° C., if the irradiation time is long, some effects can be obtained, but the quality is not merely satisfied. Therefore, the temperature of the substrate at the time of ultraviolet irradiation has a great influence on the curing of the sealing material.

【0031】さらに滴下工法で液晶パネルを作成する際
に、紫外線照射時の基板温度を上昇させる場合の課題
は、シール材の硬化が不十分な状態で高温の液晶と接す
ることである。従って、紫外線照射時に基板の温度を上
昇させて放置した際に液晶パネルのシール材の配向状態
と電圧保持率がどうなるかの結果を<表3>に示す。こ
のとき、紫外線照射時の条件は、基板温度が80℃で紫
外線ランプの照度が10mw/cm2、照射時間が60
0秒で行った。実施例8として基板貼り合せから紫外線
照射までの放置時間が室温で1分、実施例9として放置
時間が室温で2分、実施例10として基板温度が40℃
で放置時間1分、実施例11として基板温度60℃で放
置時間1分、実施例12として基板温度80℃放置時間
1分、比較例4として基板温度100℃で放置時間1分
間を行った。実際の基板の上昇温度は80℃で室温から
約15秒なので1分は十分長い時間となる。
Further, when a liquid crystal panel is prepared by the dropping method, a problem when raising the substrate temperature during irradiation with ultraviolet rays is that the sealing material is brought into contact with a high-temperature liquid crystal in an insufficiently cured state. Therefore, Table 3 shows the results of the orientation of the sealing material of the liquid crystal panel and the voltage holding ratio when the temperature of the substrate is increased and the substrate is left at the time of ultraviolet irradiation. At this time, the conditions at the time of ultraviolet irradiation are as follows: the substrate temperature is 80 ° C., the illuminance of the ultraviolet lamp is 10 mw / cm 2 , and the irradiation time is 60 minutes.
Performed at 0 seconds. In Example 8, the standing time from bonding of the substrate to the irradiation of the ultraviolet rays was 1 minute at room temperature. In Example 9, the leaving time was 2 minutes at room temperature. In Example 10, the substrate temperature was 40 ° C.
In Example 11, the substrate temperature was 60 ° C. for 1 minute. In Example 12, the substrate temperature was 80 ° C. for 1 minute. In Comparative Example 4, the substrate temperature was 100 ° C. for 1 minute. Since the actual temperature rise of the substrate is 80 ° C. and about 15 seconds from room temperature, one minute is a sufficiently long time.

【0032】表3から、滴下工法でも、紫外線照射時の
基板温度が80℃までなら表示品位への影響はない。し
かし基板温度が100℃の場合、シール材での配向異常
の幅が0.5mmと程度が悪い。このことは液晶材料の
相転移温度が85℃で、100℃では液晶材料が等方相
となりシール材の溶解性を高めるためと考えられる。実
際の液晶材料で相転移温度が80℃より低くなることは
ないので、滴下工法の場合でも紫外線照射時の基板の温
度が80℃までなら問題なくシール材の十分な硬化が得
られる。
As can be seen from Table 3, even in the dropping method, the display quality is not affected if the substrate temperature at the time of ultraviolet irradiation is up to 80 ° C. However, when the substrate temperature is 100 ° C., the width of the orientation abnormality in the sealing material is as poor as 0.5 mm. This is considered to be because the phase transition temperature of the liquid crystal material is 85 ° C., and at 100 ° C., the liquid crystal material becomes an isotropic phase to enhance the solubility of the sealing material. Since the phase transition temperature does not become lower than 80 ° C. in an actual liquid crystal material, sufficient curing of the sealing material can be obtained without any problem if the temperature of the substrate at the time of ultraviolet irradiation is up to 80 ° C. even in the case of the dropping method.

【0033】以上から、電極部分の配線影がある液晶パ
ネルでも、シール材を硬化するための紫外線条件とし
て、基板の温度を80℃、照度が10〜30mw/cm
2、照射エネルギーが6000mJ/cm2以上であれば
表示品位の良好な液晶パネルを提供できる。
As described above, even in a liquid crystal panel having a wiring shadow on an electrode portion, the temperature of the substrate is set to 80 ° C. and the illuminance is set to 10 to 30 mw / cm.
2. If the irradiation energy is 6000 mJ / cm 2 or more, a liquid crystal panel having good display quality can be provided.

【0034】その際に紫外線硬化型シール材料として
は、メタクリル、及びアクリル系の樹脂を主材とし、光
開始剤にアセトフェノン、ベンゾフェノン、ベンゾイン
系のものを1wt%以上3wt%以下の範囲で配合し、
光開始剤としてチオキサンソン系のものを1wt%以上
3wt%以下の範囲で配合し、粘度調整用のフィラー
材、シラン系のカップリング剤を配合したものを使用す
ることが必要である。
At this time, the UV-curable sealing material is mainly composed of methacrylic or acrylic resin, and acetophenone, benzophenone, or benzoin-based photoinitiator is compounded in a range of 1 wt% to 3 wt%. ,
It is necessary to use a thioxanthone-based photoinitiator in a range of 1% by weight or more and 3% by weight or less, and a filler for viscosity adjustment and a silane-based coupling agent.

【0035】また、今回の実施例の中では電極の配線幅
を50μmまで検討したが、ラマン分光法の結果から電
極幅が100μmの場合でも使用可能である。またスリ
ット幅に関しては5μm以上あれば問題ない。
Further, in the present embodiment, the wiring width of the electrode was examined up to 50 μm. However, from the result of Raman spectroscopy, it is possible to use even when the electrode width is 100 μm. There is no problem if the slit width is 5 μm or more.

【0036】[0036]

【表1】 [Table 1]

【0037】[0037]

【表2】 [Table 2]

【0038】[0038]

【表3】 [Table 3]

【0039】[0039]

【発明の効果】以上のように、本発明は、基板の貼り合
せ精度、及び生産性の向上を図ることが可能な紫外線硬
化型のシール材を使用すル液晶パネルの製造方法に関
し、狭額縁化したカラーTFT液晶パネルや反射型カラ
ーSTNパネルに対応できる液晶パネルの製造方法を提
供することができる。
As described above, the present invention relates to a method of manufacturing a liquid crystal panel using a UV-curable sealing material capable of improving the bonding accuracy of a substrate and the productivity, and relates to a method for manufacturing a narrow frame. It is possible to provide a method of manufacturing a liquid crystal panel that can correspond to a color TFT liquid crystal panel or a reflection type color STN panel.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明による紫外線照射方法を示す概略図FIG. 1 is a schematic diagram showing an ultraviolet irradiation method according to the present invention.

【図2】本実施例で使用した液晶パネルの断面図FIG. 2 is a sectional view of a liquid crystal panel used in the present embodiment.

【図3】ラマン分光法での電極影部のシール材重合度合
を示すグラフ
FIG. 3 is a graph showing the degree of polymerization of a sealing material at the shadow of an electrode in Raman spectroscopy.

【符号の説明】[Explanation of symbols]

1−1 高圧水銀ランプ 1−2 310nm以下の波長をカットするガラス 1−3 遮光マスク 1−4 液晶パネル 1−5 ホットプレート 2−1 多層Crスリット付き基板 2−2 多層Crスリット 2−3 基板 2−4 透明電極 2−5 配向膜 2−6 液晶 2−7 樹脂ビーズ 2−8 アクリル系紫外線硬化型シール材 1-1 High-pressure mercury lamp 1-2 Glass that cuts a wavelength of 310 nm or less 1-3 Light-shielding mask 1-4 Liquid crystal panel 1-5 Hot plate 2-1 Substrate with multilayer Cr slit 2-2 Multilayer Cr slit 2-3 Substrate 2-4 Transparent electrode 2-5 Alignment film 2-6 Liquid crystal 2-7 Resin beads 2-8 Acrylic UV curable sealing material

───────────────────────────────────────────────────── フロントページの続き (72)発明者 松川 秀樹 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Fターム(参考) 2H089 MA04Y MA05Y NA22 NA24 NA37 NA44 QA12 RA10 TA01 TA09 TA12 TA13 TA17 2H091 FA02Y FA14Z FA34Y HA10 LA12 5G435 AA17 BB12 CC09 CC12 EE09 KK02 KK05 KK10  ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hideki Matsukawa 1006 Kazuma Kadoma, Kadoma-shi, Osaka Matsushita Electric Industrial Co., Ltd. F-term (reference) 2H089 MA04Y MA05Y NA22 NA24 NA37 NA44 QA12 RA10 TA01 TA09 TA12 TA13 TA17 2H091 FA02Y FA14Z FA34Y HA10 LA12 5G435 AA17 BB12 CC09 CC12 EE09 KK02 KK05 KK10

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 少なくとも一方の基板の電極が遮光性の
ある材質で形成されていて、他方の基板はカラーフィル
ターと、ブラックマトリクスとが形成されている液晶パ
ネルの製造方法であって、前記一方の基板には、2枚の
基板を接着し、液晶を封入するための紫外線硬化型シー
ル材を形成する工程と、前記シール材を形成した基板と
対向する基板の位置合わせを行ったあと2枚の基板を貼
り合わせる工程と、所定のギャップとなるように前記貼
り合わせた基板を加圧する工程と、シール部分以外を遮
光し、基板の温度を40℃以上80℃以下の温度範囲内
で調整しシール部分に紫外線を照射する工程と、必要な
端子部分を残して割断し液晶セルを作成する工程とを有
することを特徴とする液晶パネルの製造方法。
1. A method of manufacturing a liquid crystal panel, wherein at least one of the electrodes of the substrate is formed of a material having a light-shielding property, and the other substrate is provided with a color filter and a black matrix. A step of bonding two substrates to each other to form an ultraviolet-curable sealing material for enclosing liquid crystal, and after positioning the substrate facing the sealing material and two substrates, Bonding the substrates, pressing the bonded substrates so as to have a predetermined gap, and shielding the portions other than the seal portion from light, and adjusting the substrate temperature within a temperature range of 40 ° C. or more and 80 ° C. or less. A method for manufacturing a liquid crystal panel, comprising: a step of irradiating an ultraviolet ray to a seal portion; and a step of forming a liquid crystal cell by cutting while leaving a necessary terminal portion.
【請求項2】 請求項1に記載の液晶パネルの製造方法
であって、前記シール材を形成する工程と、前記2枚の
基板を貼り合わせる工程との間に、液晶を滴下供給する
工程を含むことを特徴とする液晶パネルの製造方法。
2. The method for manufacturing a liquid crystal panel according to claim 1, wherein a step of supplying liquid crystal dropwise is performed between the step of forming the sealing material and the step of bonding the two substrates. A method for manufacturing a liquid crystal panel, comprising:
【請求項3】 前記紫外線硬化型のシール材が、メタク
リルまたはアクリル性の樹脂で構成されており、光開始
剤の成分がアセトフェノン系、ベンゾイン系、またはベ
ンゾフェノン系のいずれかであり、その配合比が1wt
%以上3wt%以下で、光開始助剤としてチオキサンソ
ン系でその配合比が1wt%以上3wt%以下であるこ
とを特徴とする請求項1、または2のいずれかに記載の
液晶パネルの製造方法。
3. The ultraviolet-curable sealing material is composed of methacrylic or acrylic resin, and the photoinitiator component is any one of acetophenone-based, benzoin-based, and benzophenone-based. Is 1wt
The method according to claim 1, wherein the photoinitiator is a thioxanthone-based photoinitiator and the compounding ratio thereof is 1 wt% or more and 3 wt% or less. 4.
【請求項4】 前記シールに照射する紫外線の有効波長
領域は310nm以上400nm以下であり、前記波長
領域での照度が10mw/cm2、30mw/cm2以下
で、積算光量が3000mJ/cm2以上10000m
J/cm2であることを特徴とする請求項1から3のい
ずれかに記載の液晶パネルの製造方法。
Wherein the effective wavelength region of ultraviolet to be irradiated to the sealing is at 400nm inclusive 310 nm, illuminance at said wavelength range at 10mw / cm 2, 30mw / cm 2 or less, integrated light quantity 3000 mJ / cm 2 or more 10,000m
4. The method for manufacturing a liquid crystal panel according to claim 1, wherein J / cm 2 is J / cm 2 .
JP2000400379A 2000-12-28 2000-12-28 Liquid crystal panel, method for manufacturing the same, and apparatus for manufacturing the same Pending JP2002202514A (en)

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