JP2002171193A - High frequency module substrate - Google Patents

Abstract

(57) Abstract: Provided is a high-frequency module substrate that constitutes a transmission circuit unit that realizes a small and inexpensive mobile communication device with little loss. A power amplification unit (AMP1, AMP2) and / or a high-frequency switch (SW) and a power amplification unit (AMP1, AM) are provided.
A high-frequency module substrate having couplers COP1 and COP2 for monitoring a high-frequency input signal from P2, wherein the couplers COP1 and COP2 are connected to a main strip line 33 through which a high-frequency input signal is transmitted, and Electromagnetically coupled sub-strip line 37
And a terminating resistor 35 connected to one end of the sub-strip line 37 and mounted on the substrate surface, and the other end of the sub-strip line 37 is connected to an end face electrode 65 of the substrate. I do.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency module substrate, and more particularly to a high-frequency module substrate used in a high-frequency portion in a mobile communication device.

[0002]

2. Description of the Related Art In recent years, the spread of mobile communication devices, for example, mobile phones has been remarkable, and the functions and services of mobile phones have been improved. As a new mobile phone, a dual-band mobile phone has been proposed.
This dual-band mobile phone handles two transmission / reception systems while a normal mobile phone handles only one transmission / reception system. As a result, the user can select and use a convenient transmission / reception system.

In recent years in Europe, a GSM / DCS dual-band mobile phone having a plurality of transmission / reception systems having different pass bands has been studied.

FIG. 7 shows a circuit block diagram of the GSM / DCS dual band system. GSM / DC shown in FIG.
In the case of the S dual band system, at the time of transmission,
After being amplified by the power amplifier AMP100 or AMP200 on the Tx side, the coupler COP100 or COP200 is amplified.
, A radio wave is transmitted from the antenna ANT via the high-frequency switch module ASM1 including a high-frequency switch and a demultiplexing circuit.

On the other hand, at the time of reception, a radio wave is received from the antenna ANT and the high-frequency switch module ASM
1 and is sent to the power amplifier AMP300 or AMP400 on the receiving circuit (Rx) side.

[0006] Coupler COP100 or COP200
Has a main stripline through which a high-frequency input signal is transmitted, and a substripline electromagnetically coupled to the mainstripline and having one end terminated by a resistor. The monitored output is supplied to a separately provided automatic gain control circuit to control the gain of the power amplifier AMP100 or AMP200.

[0007]

However, in the related art, although some modules are typified by, for example, a dual-band high-frequency switch module, each of a high-frequency switch module, a coupler, and a power amplifier is used. Since the components are mounted on the printed wiring board, there is a problem that it is difficult to further reduce the size and weight.

The high-frequency switch module, the coupler, and the power amplifier each have a certain insertion loss. However, when these components are configured and connected as individual components, the signal path as a whole increases and the loss increases. . Further, when a line or a circuit for adjusting the matching between components is separately required, the loss further increases. An increase in loss causes an increase in power consumption, which is a problem in a mobile communication device having a limited battery capacity.

Further, there is a demand for further miniaturization of the mobile communication device, and there is an increasing demand to reduce the area occupied by the component group as much as possible. It is desirable to reduce the area occupied by the component group also from the viewpoint of substrate cost.

It is an object of the present invention to provide a high-frequency module substrate which constitutes a transmission circuit for realizing a small and inexpensive mobile communication device with little loss.

[0011]

A high-frequency module substrate according to the present invention has a high-frequency semiconductor element, a power amplifier for amplifying a high-frequency input signal, and / or a plurality of transmission / reception systems having different pass bands. And a high-frequency switch for switching between a transmission system and a reception system, and a coupler for monitoring a high-frequency input signal from the power amplification unit, wherein the coupler transmits a high-frequency input signal. A main strip line, a sub-strip line electromagnetically coupled to the main strip line, and a terminating resistor connected to one end of the sub-strip line and mounted on a substrate surface. Is connected to an end surface electrode of the substrate.

By adopting such a configuration, the coupler is built in the multilayer substrate together with other high-frequency amplifiers and / or high-frequency switches constituting the transmission circuit unit, and compared with a case where the coupler is configured as an individual component. As a result, the signal path as a whole can be shortened, and the loss can be reduced.

Further, by incorporating the coupler in the substrate, it becomes possible to use the end face electrode of the substrate as a monitor signal output electrode of the coupler. For this reason, the area of the end face electrode of the coupler which has been separately formed as a single unit in the related art becomes unnecessary, and the occupied area of the entire high-frequency module substrate can be reduced.

Further, by incorporating the coupler in the board, the terminating resistor constituting a part of the coupler can be constituted as one of the surface mount components of the board. Therefore, unlike the case where the mounting components on the printed circuit board are conventionally arranged in a plane, the components can be vertically stacked and arranged, so that the occupied area of the entire high-frequency module substrate can be reduced.

The high-frequency module substrate of the present invention has a ground electrode inside the substrate and a capacitor electrode for forming a capacitance between the input / output electrodes at both ends of the main strip line and the ground electrode. It is desirable that an LC low-pass filter be constituted by the capacitance of a capacitor constituted by the ground electrode and the capacitor electrode and the inductance of the main strip line.

By adopting such a configuration, the main strip line of the coupler also has a function as an inductance element of the LC low-pass filter, and a circuit of the low-pass filter is separately formed in a portion different from the coupler in the substrate. This eliminates the necessity, and the area occupied by the high-frequency module substrate can be reduced. Further, the number of signal paths is reduced, and loss can be suppressed.

In the high-frequency module substrate according to the present invention, the ground electrode is provided inside the substrate, and the parasitic capacitance of a capacitor formed by the input / output electrodes at both ends of the main strip line and the ground electrode; It is desirable to form an LC low-pass filter with the inductance of the strip line. In particular, this is effective when the dielectric constant of the insulator layer forming the substrate is high.

By adopting such a configuration, as described above, the main strip line of the coupler also has a function as an inductance element of the LC low-pass filter, and it is not necessary to separately configure a circuit of the low-pass filter. Thus, the occupied area can be reduced, the signal path can be reduced, and the loss can be suppressed. Furthermore, when a low-pass filter function is added to the coupler, it is not necessary to newly form a capacitor electrode for forming a capacitance between the coupler and the ground electrode, and the area occupied by the coupler in the substrate can be further reduced.

Further, in the high-frequency module substrate of the present invention, it is desirable to have a capacitor electrically connected in parallel to the main strip line. Thereby, the inductance of the main strip line and the capacitor connected in parallel to the main strip line constitute a parallel resonance circuit, and it is possible to attenuate a desired component of harmonics generated in the transmission power amplifier. .

In the high-frequency module substrate of the present invention, it is desirable that only the electromagnetic coupling portion of the main strip line and the sub-strip line is formed on the same plane. That is,
It is desirable that the portion not involved in the electromagnetic coupling is formed on an insulating layer different from the electromagnetic coupling. This allows
As long as the line width forming accuracy of the strip line is good, the positional relationship between the main strip line and the sub-strip line in the electromagnetic coupling portion is invariable even if the lamination accuracy of the substrate slightly varies. Since the portions that do not affect the monitor output and that do not contribute to the coupling are arranged vertically stacked on the multilayer substrate, the occupied area can be minimized.

In the high-frequency module board of the present invention, it is desirable to provide therein at least two couplers having different operating frequencies. With this, when a plurality of systems using high-frequency signals having different frequencies are mixed in one mobile communication device, the couplers corresponding to the respective systems are built into one substrate, as in the related art. The signal path can be shortened, the occupied area can be reduced, and the loss can be suppressed as compared with the case where each coupler is individually configured.

[0022]

FIG. 1 is a block diagram showing a high-frequency module substrate according to the present invention. The high-frequency module substrate according to the present invention is a multi-band having a branching circuit DIP1 for dividing a plurality of transmission / reception systems having different passbands into respective transmission / reception systems, and diode switch circuits SW1 and SW2 for switching the transmission / reception systems to the respective transmission / reception systems. High frequency switch SW, amplifying units AMP1 and AMP2, and amplifying unit AM
In order to monitor the outputs of P1 and AMP2, they are connected to the Tx terminals of the diode switch circuits SW1 and SW2,
Couplers COP1 and COP corresponding to each pass frequency
And 2. Coupler COP1, COP2
Also has the function of a low-pass filter for removing harmonic signals.

The high-frequency switch SW is a GSM / D
In the CS dual-band mobile phone, for switching the connection between the transmission circuit Tx corresponding to each system and the demultiplexing circuit DIP1 which is a common circuit, and the connection between the reception circuit Rx and the demultiplexing circuit DIP1 which is a common circuit. Used for

The couplers COP1 and COP on the Tx side
Reference numeral 2 plays a role in extracting a part of the transmission signal amplified by each of the amplifiers AMP1 and AMP2 and transmitting a feedback signal to the APC circuit.

FIG. 2 shows a specific configuration of the high-frequency switch SW of FIG. 1 and the couplers COP1 and COP2. The first port P1 of the diode switch circuit SW1 connected to the coupler COP1 on the Tx side has a diode D
It is connected to the anode of AG1. The anode of the diode DAG1 is grounded via the inductor LAG2 and the capacitor CAG4.

Further, a connection point between the inductor LAG2 and the capacitor CAG4 is connected to a control terminal VG1 via a control resistor RG1. Also, the diode DAG1
Is connected to the second port P2 of the branching circuit DIP1.

The transmission line STL is connected to the second port P2.
1 is connected to the other end of the transmission line STL1.
It is connected to a third port P3 which is an Rx signal output terminal. The other end of the transmission line STL1 is connected to a diode DA.
It is connected to the anode of G2, and the cathode of diode DAG2 is grounded via capacitor CAG2 and inductor LAG1. Here, the parallel resonance circuit formed by the capacitor CAG2 and the inductor LAG1 has a role of controlling the isolation between the first port P1 and the third port P3.

Similarly, the fourth port P4 of the diode switch circuit SW2 connected to the coupler COP2 on the Tx side.
Is connected to the anode of the diode DAD1.

The anode of the diode DAD1 is
It is grounded via the inductor LAD2 and the capacitor CAD4. Further, a connection point between the inductor LAD2 and the capacitor CAD4 is connected to the control terminal VD1 via the control resistor RD1. Also, the diode DA
The cathode of D1 is connected to the fifth port P5 of the branching circuit DIP1.
It is connected to the.

The fifth port P5 has a transmission line S
One end of TL2 is connected, and the other end of the transmission line STL2 is connected to a sixth port P6 which is an Rx signal output terminal. The other end of the transmission line STL2 is connected to the anode of the diode DAD2, and the cathode of the diode DAD2 is connected to the capacitor CAD2 and the inductor LAD1.
Grounded. Here, the capacitor CAD2,
The parallel resonance circuit formed by the inductor LAD1 has a role of controlling the isolation between the fourth port P4 and the sixth port P6.

The antenna terminal ANT is connected to a branching circuit DI.
The second port P2 and the fifth port P5 via P1
It is connected to the. This demultiplexing circuit DIP1 has two different
It has a role of separating the transmission / reception signal of the 900 MHz band and the transmission / reception signal of the 1800 MHz band of two systems.

Here, the demultiplexing circuit DIP1 is, for example, 180
A high-pass filter HPF1 for passing a 0 MHz band;
It is composed of a capacitor C2, an inductor L2, a low-pass filter LPF1 that allows the 900 MHz band to pass, a capacitor C1, and an inductor L1.

Then, the demultiplexing circuit DIP1, the diode switch circuits SW1 and SW2, and the coupler COP1,
At least a part of COP2 is built in the substrate. For example, the high-pass filter H configuring the branching circuit DIP1
PF1, a low-pass filter LPF1, and transmission lines STL1, STL2 forming a diode switch circuit.
In addition, the couplers COP1 and COP2 are built in a substrate formed by laminating an electrode pattern and a dielectric layer. Further, a demultiplexing circuit DIP1, a diode switch circuit SW
1, a chip element such as a diode, which constitutes a part of SW2, low-pass filter LPF2, and couplers COP1 and COP2, is mounted on a substrate.

FIG. 3 shows the amplifiers AMP1 and AMP2 of FIG.
FIG. 4 shows a specific configuration of FIG.

For example, G which is a mobile phone system in Europe
In the dual system of the SM / DCS, one is a high-frequency power amplifier AMP1 for GSM and the other is a high-frequency power amplifier AMP2 for DCS, and these are combined to form an amplifier AMP.

The amplifying unit AMP includes high-frequency semiconductor elements (hereinafter, also referred to as high-frequency MMICs) 3a, 3b
Input matching circuits 2a and 2b connected to these high-frequency MMICs 3a and 3b for matching input impedance of high-frequency input signals;
and output matching circuits 5a and 5b connected to voltage supply lines 6a and 6b for supplying voltages to a and 3b, respectively, for matching desired output characteristics.

The input matching circuits 2a and 2b have capacitors, inductors, and the like.

On the other hand, the output matching circuits 5a and 5b have output side microstrip line lines 7 and 10 for transmitting different signals. The output side direct current blocking capacitor C is connected between them. The output terminals 12 and 15 are connected to the Tx terminals in FIGS.

The output side microstrip line line 7,
Numeral 10 is used to optimize impedance matching with an external circuit connected to the output terminals 12 and 15 and to achieve matching so as to satisfy desired output characteristics, for example, output power and current consumption singly or simultaneously. The output side microstrip line lines 7 and 10 are grounded via output matching capacitors C21a and C31a.

Further, voltage supply lines 6a, 6b for applying a voltage to the high frequency MMICs 3a, 3b are connected to the output side microstrip line lines 7, 10, respectively. stub)
17a and 17b are connected in parallel with the voltage supply lines 6a and 6b.

The amplifying part AMP of the present invention is described in detail in FIG.
As shown in (2), the two amplifying units AMP1 and AMP2 are formed on a dielectric substrate having a specific dielectric constant of a predetermined value. Specifically, GSM /
In the DCS dual system, the lower part between A and B is GSM
High-frequency power amplifier AMP1 and the upper part between A and B is DC
This is the S high frequency power amplifier AMP2.

The amplification unit AMP is connected to the high frequency MMIC 3 (3
a, 3b), an input matching circuit 2 for matching input impedance of a high-frequency input signal, a bias circuit 4, and output matching circuits 5a and 5b for matching desired output characteristics. are doing. The input matching circuit 2
A capacitor, an inductor, and the like are connected.

In the output matching circuits 5a and 5b, desired output characteristics such as output power
Output-side microstrip line lines 7 and 10 which are distributed constant lines are connected in order to achieve matching so that current consumption and the like are satisfied independently or simultaneously. These output-side microstrip line lines 7 and 10 are connected to each other. Grounded via output matching capacitors C21a and C31a.

Further, open-ended distributed constant lines 17a and 17b are connected to the output side microstrip lines 7 and 10, respectively.

The frequency of the upper DCS high-frequency power amplifier AMP2 between A and B is 1800 MHz, which is twice the frequency of 900 MHz of the GSM high-frequency power amplifier AMP1. Although the harmonics on the GSM side, particularly the second harmonic, may affect the 1800 MHz harmonic signal, which is the fundamental wave on the DCS side, by interference, in the present invention, the output side microstrip line lines 7 and 10 By providing the open distributed constant lines 17a and 17b, harmonics can be reduced.

Then, in the output matching circuits 5a and 5b, the output microstrip line line 7 on the DCS side
And output side microstrip line 10 on the GSM side
Between them, the GND line 9 and the GND line 18 are arranged to reduce the interference between the output microstrip lines 7 and 10 on the GSM side and the DCS side. This G
The ND lines 9 and 18 are formed in parallel, and are connected to GND by a plurality of via-hole conductors.

The line lengths of the voltage supply lines 6a, 6b and the open-ended distributed constant lines 17a, 17b are shorter than １ ／ of the wavelength of the fundamental wave in the high-frequency input signal. Since the line length is not fixed to 1/4 wavelength of the fundamental wave but shorter than 1/4 wavelength, the phase of harmonics can be adjusted, and non-conjugate matching should be performed at any spurious frequency between the coupler and the amplifier. And a small high-frequency module substrate can be obtained.

Here, the power amplifier AMP and the coupler COP are designed to be matched with an impedance lower than 50Ω.

The power amplifier AMP and the coupler COP are the high-frequency semiconductor element MMIC3 in the power amplifier.
From the viewpoint that several Ω, which is a load at the end, is matched with the coupler with little load variation, it is desirable to perform impedance matching with 20 to 30 Ω. In order to perform matching with an impedance lower than 50Ω, the output side microstrip lines 7 and 10 of the power amplifying unit AMP may be shortened and matched.

FIG. 5 shows the couplers COP1 and COP of FIG.
2 and its vicinity are shown enlarged.

1 and 5, each of the couplers COP1 and COP2 has a main strip line 33 and a sub-strip line 37 having one end running parallel thereto and terminated by a terminating resistor 35.

The sub-strip line 37 is electromagnetically coupled to the high-frequency signal transmitted through the main strip line 33, takes out a monitor output proportional thereto, and outputs
From the other end of 7, although not shown, it is supplied to an automatic gain control circuit. The automatic gain control circuit controls the gain of the transmission power amplifiers AMP1 and AMP2 using the monitor output.

At both ends of the main strip line 33, capacitors 39 and 41 are respectively formed between the main strip line 33 and the ground electrode, and a capacitor 43 is electrically connected to the main strip line 33 in parallel. Capacitors 39, 41
And the inductance of the main strip line 33 constitute an LC low-pass filter.

Also, with the capacitor 43 electrically connected in parallel to the main strip line 33, the inductance of the main strip line 33 and the capacitor 43 connected in parallel to the main strip line 33 constitute a parallel resonance circuit. Then, it is possible to attenuate a desired component among the harmonics generated in the transmission power amplifiers AMP1 and AMP2.

The high-frequency module substrate of the present invention is shown in FIG.
6 (a), the second insulating layer 55 from the top shown in FIG. 6 (b), the second insulating layer 57 from the bottom shown in FIG. 6 (c), FIG. 6 (d). And the lowermost insulating layer 59 shown in FIG. The second insulating layer 5 from the top
The insulating layer between the insulating layer 5 and the second insulating layer 57 from the bottom is omitted. Also, only the pattern of the circuit constituting the coupler is shown, and the other patterns of the transmission power amplifier and the high frequency switch are omitted.

The insulating layers 53 and 55 have cavities 8 for mounting the high-frequency semiconductor element MMIC3, respectively.
1, 82 are provided.

On the upper surfaces of the insulating layer 55 and the insulating layer 59, ground electrodes 61 and 63 indicated by oblique lines are formed, respectively. Then, a connection portion 66 for connecting to an end face electrode 65 formed on the side surface of the substrate is provided (a small circle in FIG. 6 indicates a via-hole conductor penetrating the insulating layer).

As shown in FIG. 6C, the insulating layer 5
7, the main strip lines 33 of the couplers COP1 and COP2 and the sub-strip line 37 running parallel to the main strip lines are formed, and the other end of the sub-strip line line 37 is connected to the end face electrode 65 of the substrate. .

Both ends of the main strip line 33 are connected to input / output electrodes 71 and 73 formed on the surface of the insulating layer 53 by via-hole conductors.
3 and the ground electrode 63 of the insulating layer 59 constitute capacitors 39 and 41 which form a parasitic capacitance, and a chip-shaped capacitor 43 is connected between the input / output electrodes 71 and 73. . Note that a capacitor electrode for forming the capacitors 39 and 41 may be formed between the ground electrode 61 and the ground electrode 63, and a capacitor may be formed between these capacitor electrodes and the input / output electrodes 71 and 73. good.

The portion 3b of the main strip line 33 other than the electromagnetic coupling portion 3a with the sub-strip line
May be formed on the surface of an insulating layer other than the insulating layer 57 via a via-hole conductor.

One end of the sub-strip line 37 is connected to a surface electrode 75 formed on the surface of the insulating layer 53 by a via-hole conductor. One end of the chip-shaped termination resistor 35 is connected to the surface electrode 75. The other end is connected to the ground electrode 61 of the insulator layer 55 via a via-hole conductor.
It is connected to the.

It is desirable to use a ceramic material which can be fired at a low temperature and has a relative dielectric constant of 20 or more as an insulator layer material of the high frequency module substrate. Thereby, the input / output electrode 7
The parasitic capacitance between the first and the third electrodes 73 and the ground electrode 61 of the insulating layer 55 can be increased. In order to form the capacitors 39 and 41, the capacitor electrodes are connected to the input / output electrodes 71 and 73 and the ground electrodes 61 and 63. There is no need to form them between them, and the occupied area can be reduced. Alternatively, a material having a high relative dielectric constant may be used only for some of the insulator layers. As the electrode material,
A material mainly composed of Ag or Cu is desirable.

In the high-frequency module substrate configured as described above, the coupler as well as the power amplifier and the high-frequency switch are built into the substrate, so that the area of the entire module can be reduced. In addition, a low-pass filter function can be added to the coupler by utilizing the parasitic capacitance between the main strip line of the coupler and the ground electrode, and it is not necessary to separately form a low-pass filter. Also, by adjusting the capacitance value of the capacitor formed electrically in parallel with the main strip line, a desired harmonic signal can be attenuated.

[0064]

As is apparent from the above description, according to the present invention, the coupler is built in the multilayer board together with other high-frequency amplifiers and / or high-frequency switches constituting the transmission circuit section, and the couplers are individually provided. Compared to the case where the components are configured as components, the signal path as a whole can be shortened, and the loss can be reduced.

Further, by incorporating the coupler in the substrate, it becomes possible to use the end face electrode of the substrate as a monitor signal output electrode of the coupler. For this reason, the area for the end face electrode of the coupler which has been separately formed as a single unit in the related art becomes unnecessary, and the area occupied by the entire high-frequency module substrate can be reduced.

Further, by incorporating the coupler into the board, the terminating resistor constituting a part of the coupler can be constituted as one of the surface mount components of the board, and conventionally, as a mount component on a printed board, Unlike the case in which the high-frequency module substrates are arranged in a vertical manner, they can be stacked in the vertical direction, so that the area occupied by the high-frequency module substrate as a whole can be reduced.

[Brief description of the drawings]

FIG. 1 is a block diagram illustrating the concept of a high-frequency module according to the present invention.

FIG. 2 is a circuit diagram of a high-frequency switch and a coupler in the high-frequency module of FIG. 1;

FIG. 3 is a circuit diagram of an amplification unit of the high-frequency module according to the present invention.

FIG. 4 is a pattern layout diagram of FIG. 3;

FIG. 5 is a circuit diagram of a coupler.

FIG. 6 is an exploded view showing an electrode pattern of the high-frequency module substrate.

FIG. 7 is a block diagram of a transmission / reception system having a conventional high-frequency switch, coupler, and power amplifier.

[Explanation of symbols]

 AMP1, AMP2 Power amplifier COP1, COP2 Coupler SW High frequency switch 3a, 3b High frequency semiconductor element 33 Main strip line 35 Terminating resistor 37 Sub-strip lines 39, 41, 43 ... capacitors 61, 63 ... ground electrodes 65 ... end face electrodes 71, 73 ... input / output electrodes

Continued on the front page F term (reference) 5J067 AA01 AA04 AA41 CA36 CA87 CA92 FA16 HA09 HA19 HA25 HA29 HA33 HA38 KA29 KA42 KA46 KA66 KA68 KS01 KS11 LS11 QA04 QS04 SA14 TA01 5J091 AA01 AA04 AA16 CA29 HA29 KA42 KA46 KA66 KA68 QA04 SA14 TA01 UW08 5K011 AA04 DA02 DA12 DA21 DA27 JA01 KA03

Claims (5)

[Claims] A power amplification unit having a high-frequency semiconductor element for amplifying a high-frequency input signal and / or a plurality of transmission / reception systems having different passbands are separated into respective transmission / reception systems;
A high-frequency module substrate having a high-frequency switch for switching between a transmission system and a reception system, and a coupler for monitoring a high-frequency input signal from the power amplification unit, wherein the coupler is a main stripline through which a high-frequency input signal is transmitted. A sub-strip line electromagnetically coupled to the main strip line, and one end of the sub-strip line,
Having a terminating resistor mounted on the substrate surface,
A high-frequency module substrate, wherein the other end of the sub-strip line is connected to an end face electrode of the substrate. And a capacitor electrode for forming a capacitance between an input / output electrode at both ends of a main strip line and the ground electrode, wherein the ground electrode and the capacitor are provided. 2. The high-frequency module substrate according to claim 1, wherein an LC low-pass filter is constituted by the capacitance of a capacitor constituted by electrodes and an inductance of the main strip line. 3. A parasitic capacitance of a capacitor having a ground electrode inside a substrate, comprising input / output electrodes at both ends of the main strip line and the ground electrode, and an inductance of the main strip line. LC
2. A low-pass filter is configured.
The high-frequency module substrate as described in the above. 4. The high-frequency module substrate according to claim 2, further comprising a capacitor electrically connected in parallel to the main strip line. 5. The high-frequency module substrate according to claim 1, wherein only the electromagnetic coupling portion of the main strip line and the sub-strip line is formed on the same plane.