JP2002164573A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2002164573A5 JP2002164573A5 JP2001319395A JP2001319395A JP2002164573A5 JP 2002164573 A5 JP2002164573 A5 JP 2002164573A5 JP 2001319395 A JP2001319395 A JP 2001319395A JP 2001319395 A JP2001319395 A JP 2001319395A JP 2002164573 A5 JP2002164573 A5 JP 2002164573A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- semiconductor layer
- layer
- light emitting
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 claims 34
- 239000004065 semiconductor Substances 0.000 claims 34
- 239000012535 impurity Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001319395A JP4954407B2 (ja) | 1997-11-18 | 2001-10-17 | 窒化物半導体発光素子 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9-317421 | 1997-11-18 | ||
JP31742197 | 1997-11-18 | ||
JP1997317421 | 1997-11-18 | ||
JP2001319395A JP4954407B2 (ja) | 1997-11-18 | 2001-10-17 | 窒化物半導体発光素子 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP34897397A Division JP3275810B2 (ja) | 1997-06-11 | 1997-12-18 | 窒化物半導体発光素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002164573A JP2002164573A (ja) | 2002-06-07 |
JP2002164573A5 true JP2002164573A5 (fr) | 2005-07-28 |
JP4954407B2 JP4954407B2 (ja) | 2012-06-13 |
Family
ID=26569011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001319395A Expired - Lifetime JP4954407B2 (ja) | 1997-11-18 | 2001-10-17 | 窒化物半導体発光素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4954407B2 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006049848A (ja) * | 2004-06-30 | 2006-02-16 | Showa Denko Kk | n型III族窒化物半導体積層構造体 |
KR101745996B1 (ko) * | 2011-01-03 | 2017-06-12 | 엘지이노텍 주식회사 | 발광소자 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2828002B2 (ja) * | 1995-01-19 | 1998-11-25 | 松下電器産業株式会社 | 半導体発光素子およびその製造方法 |
JP3598591B2 (ja) * | 1995-07-17 | 2004-12-08 | 住友化学工業株式会社 | 3−5族化合物半導体の製造方法 |
JPH0997921A (ja) * | 1995-07-21 | 1997-04-08 | Sumitomo Chem Co Ltd | 3−5族化合物半導体の製造方法 |
JP2900990B2 (ja) * | 1995-11-24 | 1999-06-02 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
-
2001
- 2001-10-17 JP JP2001319395A patent/JP4954407B2/ja not_active Expired - Lifetime
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2004031770A5 (fr) | ||
JP2004087908A5 (fr) | ||
KR100803102B1 (ko) | 질화물 반도체소자 | |
JP2006324685A5 (fr) | ||
CA2444273A1 (fr) | Dispositif semi-conducteur a base de nitrure de gallium | |
WO2000076004A1 (fr) | Dispositif a semiconducteur au nitrure | |
EP2075855A3 (fr) | Structure de diode électroluminescente à base de nitrure de groupe III avec un super réseau | |
JP2005507155A5 (fr) | ||
JP2009260398A5 (fr) | ||
JP2001168385A5 (fr) | ||
JP2007081180A (ja) | 半導体発光素子 | |
JP2005136177A (ja) | Iii−v族窒化物半導体素子 | |
JP2003101154A5 (fr) | ||
JP2000133883A5 (fr) | ||
JP2002026384A (ja) | 集積型窒化物半導体発光素子 | |
JP2004343147A5 (fr) | ||
JP2004087763A5 (fr) | ||
JP2010040838A5 (fr) | ||
JP2003060234A5 (fr) | ||
JP5388469B2 (ja) | 発光素子 | |
JP2002164573A5 (fr) | ||
JP2005328080A5 (fr) | ||
JP2005093578A (ja) | Iii族窒化物系化合物半導体素子 | |
CN101290957B (zh) | 发光元件 | |
JP2009076864A5 (fr) |