JP2002100827A - Semiconductor laser - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser of a structure such that, during works of a wire-bonding of a semiconductor laser chip and a wire boding of a light-receiving element, the operations of a change in the approaching direction of a capillary and the like are dispensed with, moreover, the output of the light-receiving element can be increased, and at the same time, a miniaturization of the whole laser is contrived. SOLUTION: A semiconductor laser is formed in a constitution that the laser is at least provided with a semiconductor laser chip 5 and a light-receiving element 6 for detecting the light output of the chip 5, by monitoring light emitter from the end surface on the side opposite to the laser beam emitting surface of the chip 5. The monitored light emitted from the chip 5 is received by the side surface of the element 6 which intersects orthogonally the carrier diffusion surface of the element 6 and has a microscopic roughened structure. The thickness of the side surface of the element 6 from the mounting surface of the chip 5 is thicker than the thickness of the chip 5 from the mounting surface of the chip 5.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device, and more particularly to a semiconductor laser device used as a light source of an optical disk device and a hologram laser type having a function of receiving reflected light modulated by a disk and outputting a modulation signal. The present invention relates to a semiconductor laser device, an LD-pumped solid-state laser, and a semiconductor laser device used as a displacement measuring device or a pointer.

[0002]

2. Description of the Related Art A conventional technique will be described with reference to FIGS. 9 (a) and 9 (b). 9A and 9B are a perspective view of a semiconductor laser device according to a conventional example and a cross-sectional view of the perspective view taken along a plane including the YZ axes. This conventional example shows an example of a structure having a circular stem about the optical axis.

As shown in FIGS. 9A and 9B, in this semiconductor laser device, a semiconductor laser chip 102 and a light output detecting light receiving element 103 (hereinafter, referred to as a light receiving element) are provided on a stem 101. , At substantially right angles. Then, the light receiving element 103 has its carrier diffusion surface 1
04 is disposed so as to face the light 105 emitted from behind the semiconductor laser chip 102. That is,
The light receiving element 103 monitors the light 105 emitted from behind the semiconductor laser chip 102 and
02 is for detecting the light output of the light emitting device. Laser light 106 is emitted from the front surface of the semiconductor laser chip 102.

In the figure, reference numeral 107 denotes an electrode for outputting an electric signal of the light receiving element 103, and reference numeral 108 denotes a semiconductor laser chip 1.
02 electrode. Reference numerals 109 and 110 denote lead terminals, respectively.
In addition, a lead terminal 110 is connected to the electrode 107 of the light receiving element 103 by a gold wire 111. Stem 1
The size of 01 has a diameter of, for example, φ5.6 mm.

FIGS. 10 (a) and 10 (b) are perspective views of another conventional semiconductor laser device and YZ diagrams thereof.
It is sectional drawing cut | disconnected by the plane containing an axis | shaft.

[0006] As shown in FIGS. 10A and 10B, a metal plate 202 provided in a resin package 201 is placed on a metal plate 202.
An i-sub mount 203 is provided. And Si
A semiconductor laser chip 204 is mounted on the upper surface of the end of the submount 203, and a light detecting light receiving element 205 (hereinafter, referred to as light receiving element 205) is provided in the other end direction. Here, the light receiving element 205 and the semiconductor laser chip 2
The position of the light 20 in the hatched portion in the monitor light 207 emitted from the rear surface of the semiconductor laser chip 204
Only 7 'is incident on the light receiving element 205.

On the other hand, light 208 emitted from the front surface of the semiconductor laser chip 204 in the Y direction is reflected by the prism 206 and rises in the Z direction.

In the figure, 209 is a carrier diffusion surface of the light receiving element 205, 210 is an electrode for outputting an electric signal of the light receiving element 205, 211 is an electrode provided on the semiconductor laser chip 204, 212 to 215 are lead terminals, Lead terminal 2
Reference numeral 12 is connected to the metal plate 202 and grounded.

[0009] A gold wire 216 is used for wire bonding between the electrode 210 of the light receiving element 205 and the lead terminal 214 and between the electrode 211 of the semiconductor laser chip 204 and the lead terminal 213. Also, the lead terminal 215
Is in an electrically floating state.

The size of the resin package 201 is, for example, about φ8.2 mm × t4.8 mm. 9 and 10, the depth of the diffusion layer of the light receiving element is about 1 μm.

[0011]

By the way, in the conventional example shown in FIG. 9, the surface of the semiconductor laser chip 102 including the electrode 108 and the surface of the light receiving element 103 including the electrode 107 are arranged at substantially right angles. Have been. For this reason, the following inconveniences occur during manufacturing.

That is, the electrode 1 of the semiconductor laser chip 102
08 and the lead terminal 109, the capillary is connected to the electrode 108 and the lead terminal 109 from the Y-axis direction.
It is necessary to be done close to. On the other hand, wire bonding between the electrode 107 of the light receiving element 103 and the lead terminal 110 must be performed with the capillary approached from the Z-axis direction.

In other words, once the device is set at a certain position, only one wire bonding can be performed. In the end, the wire bonding of the semiconductor laser chip 102 and the light bonding of the light receiving element 103 are not performed.
It was necessary to rotate the entire device in a direction required for each wire bonding.

On the other hand, in the conventional example shown in FIG. 10, the surface including the electrode 211 of the semiconductor laser chip 204 and the surface including the electrode 210 of the light receiving element 205 are parallel to each other. Also, the capillary may be approached from the Z-axis direction, and there is no problem as shown in FIG. 9 as far as the workability of wire bonding is concerned. However, the conventional example of FIG. 10 has the following problems.

That is, in the structure shown in FIG.
5 is formed on the Si submount 203 while the same S
Since the semiconductor laser chip 201 is die-bonded to the i-submount 203 in the horizontal direction with respect to the light receiving element 205, as is apparent from FIG.
5 can receive only a part of the monitor light 207 emitted from the rear surface of the semiconductor laser chip 204.
Therefore, the electric signal output from the light receiving element 205 has a very small level.

On the other hand, as a method of increasing the output of the light receiving element 205, it is conceivable to enlarge the diffusion surface 209 of the light receiving element 205 in the direction A in the figure. Resin package 201
Leads to an increase in the outer shape of the. Increasing the output of the light receiving element 205 requires the APC (Au) of the laser chip.
Although it is desirable for the operation of the PDP, an increase in the outer shape of the package for that purpose has a trade-off relationship with the miniaturization of the semiconductor laser device, and there remains a problem.

Accordingly, an object of the present invention is to provide a semiconductor laser device which does not require an operation such as changing the approach direction of a capillary during wire bonding work, can increase the output of a light receiving element, and can reduce the size of the entire device. Is to make it happen.

[0018]

In order to achieve the above object, the present invention is directed to a semiconductor laser chip and a method of monitoring light emitted from an end face of the semiconductor laser chip opposite to a laser light emitting surface. A light-receiving element for detecting an optical output of the semiconductor laser chip, wherein the monitor light emitted from the semiconductor laser chip is provided with a fine uneven structure orthogonal to the carrier diffusion surface of the light-receiving element. The side surface of the semiconductor laser chip, the thickness of the side surface of the light receiving element from the mounting surface of the semiconductor laser chip is greater than the thickness of the semiconductor laser chip from the mounting surface of the semiconductor laser chip. I do. The distance between the semiconductor laser chip and the light receiving element may be 300 to 500 μm.

The present invention also provides a semiconductor laser chip,
A light-receiving element that monitors light emitted from an end surface of the semiconductor laser chip opposite to the laser light emission surface and detects light output of the semiconductor laser chip. Monitor light emitted from the light-receiving element is received by a side surface having a fine uneven structure perpendicular to the carrier diffusion surface of the light-receiving element, and the distance between the semiconductor laser chip and the light-receiving element is 300 to 500 μm. It is characterized by being.

According to the present invention, there is provided the semiconductor laser device, wherein the semiconductor laser chip and the light receiving element are arranged in a package, and at least one electrode of the semiconductor laser chip is connected to a lead terminal in the package. And at least one electrode of the light receiving element is wire-bonded to a lead terminal.

According to the present invention, as described above, the monitor light of the semiconductor laser chip is received on the side surface orthogonal to the carrier diffusion surface of the light receiving element.
Both the semiconductor laser chip and the light receiving element can be die-bonded in parallel on the same mounting surface. Therefore, in the related art, since the two elements are installed at right angles to each other, it is sometimes necessary to approach the capillaries from different directions at the time of wire bonding of the respective elements. Since the capillary may be approached from the direction and wire-bonded, it is not necessary to perform the conventional work.

Further, since the monitor light is received on the side surface of the light receiving element, the area of the carrier diffusion surface of the light receiving element only needs to be provided for the provision of the electrodes, and the size can be reduced remarkably as compared with the conventional case (about 1/5). ). Also, at this time, if the structure is as it is, the output of the light receiving element cannot be sufficiently obtained as compared with the related art,
The present invention solves this problem and provides a structure capable of obtaining a larger output.

Further, for example, in a structure in which the carrier diffusion surface of the light receiving element is above and the opposite surface is die-bonded, the depth of the carrier diffusion layer is deeper than in the prior art.
Provided at least 10 times, for example, at least 10 μm. Thus, even with a structure in which monitor light is incident from the side, a sufficient light output can be obtained to improve the photoelectric conversion efficiency and drive the APC circuit.

Further, for example, in a structure in which the carrier diffusion surface side of the light receiving element is die-bonded, the depth of the carrier diffusion layer of the light receiving element is provided at least at a distance from the mounting surface of the semiconductor laser chip to the light emitting point. Then, the emission point of the monitor light of the semiconductor laser chip and the carrier diffusion layer of the light receiving element are substantially opposed to each other, and the monitor light is effectively photoelectrically converted, and a large optical output is obtained.

[0025]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described.
This will be described with reference to FIG.

FIGS. 1A to 1C are an external perspective view, a main part sectional view, and an enlarged view of a diffusion portion of the semiconductor laser chip of the semiconductor laser device according to the present embodiment, respectively.

The major feature of this embodiment is that light (monitor light) emitted from the rear surface of the semiconductor laser chip is incident on the side surface (surface perpendicular to the carrier diffusion surface) of the light receiving element. The point is that the diffusion of the light receiving element is deepened.
The details will be described below with reference to the drawings.

As shown in FIG. 1A, a lead frame type resin mold package 1 (hereinafter simply referred to as package 1) is used.
), A stem 3 and a laser beam rising prism 4 on a metal plate 2 (integrated with a lead terminal described later) provided therein.
(Hereinafter simply referred to as prism 4). Then, the semiconductor laser chip 5 and the light receiving element 6 are placed on the stem 3.
Is die-bonded.

Here, the monitor light 15 from the rear surface of the semiconductor laser chip 5 is arranged to enter the side surface of the light receiving element 6. Further, the emitted light 16 from the front surface of the semiconductor laser chip 5 is arranged so as to hit the slope of the prism 4.

Reference numerals 7 to 10 denote lead terminals for external connection. The semiconductor laser chip 5 is wire-bonded to the lead terminal 7 and the light receiving element 6 is wire-bonded to the lead terminal 9 by a gold wire 11, respectively. Metal plate 2 is lead terminal 8
And are formed integrally with it. The lead terminal 10 is in an electrically floating state.

The light receiving element 6 is not a special element specific to the present invention, but may have a general structure. For example, the carrier concentration on the diffusion surface is as follows.
1) When B (boron) is diffused into an N-type Si substrate, 10
¹⁸ to 10 ¹⁹ / cm ² , 2) When P (phosphorus) is diffused into a Si P-type substrate, the density is 10 ¹⁹ to 10 ²⁰ / cm ² .
The concentration of the substrate is generally 10 ¹⁴ to 10 ¹⁵ / cm ^2.
It is.

Next, the semiconductor laser chip 5 and the light receiving element 6
Will be described in detail with reference to FIG. In FIG. 1B, 12 is an electrode on the semiconductor laser chip 5, 13 is a carrier diffusion layer in the light receiving element 6, and 14 is an electrode for outputting an electric signal of the light receiving element 6.
Note that the gold wire 11 is omitted. As described with reference to FIG. 1A, the monitor light 15 from the rear surface of the semiconductor laser chip 5 is incident on the side surface of the light receiving element 6 (the surface perpendicular to the carrier diffusion surface). Light 16 emitted from the front surface of the semiconductor laser chip 5 is reflected by the prism 4 and rises upward.

In this structure, the diffusion surface 13 corresponds to the electrode 1
1 only needs to be wide enough to form the first and second regions of FIG.
The length of a in (b) is about 1/5 or less of the conventional length,
It can be about 100 μm. Therefore, the distance in the direction connecting the semiconductor laser chip 5 and the light receiving element 6 can be reduced, and the size of the semiconductor laser device can be reduced.

When the light from the semiconductor laser chip 5 is received on the surface perpendicular to the diffusion surface of the light receiving element 6 as described above, the level of the output electric signal becomes higher than that of the related art simply with the structure. Become smaller. In contrast, the present embodiment has the following structure, so that a sufficient output signal can be obtained.

That is, in the present embodiment, the light receiving element 6
Is diffused 10 times or more deeper than a normal light receiving element. Here, f = 10 μm.
With such a structure, the carrier density contributing to photoelectric conversion can be increased about 10 times.

Further, the distance b between the side surface of the light receiving element 6 and the diffusion layer 13 'is set to not more than 1/2 of the conventional structure and about 50 μm. By thus narrowing the space between the side surface and the diffusion layer 13 ′, the monitor light incident on the side surface can be easily diffused.
The light output reaches 3 'and effective photoelectric conversion is performed, so that the light output can be further improved.

The depth f of the diffusion layer 13 'can be increased by a process such as increasing the diffusion time. However, the deeper the diffusion layer 13' is, the more the diffusion layer 1 'is formed.
The shape of 3 ′ changes. FIG. 1C shows an enlarged view of the diffusion portion of the light receiving element 6. As shown in FIG. 1C, the diffusion layer 13 ′ has a feature of diffusing in a bathtub shape, so that the diffusion surface 13 spreads by a length of 0.8 with respect to the diffusion layer depth 1. Therefore, when determining the actual depth of the diffusion layer, it is necessary to take this bathtub type into consideration in designing.
Here, the dimensions of each part are shown with f = 10 μm.

The semiconductor laser chip 5 and the light receiving element 6
The distance c between them is 300 to 500 μm. In the conventional structure in which the monitor light of the semiconductor laser chip is received by the carrier diffusion surface of the light receiving element, the distance between the semiconductor laser chip and the light receiving element is about 1 mm. On the other hand, the distance between the two elements can be made shorter for the following reason.

That is, generally, the carrier diffusion surface is close to the mirror surface, and therefore, if the distance between the two elements is short in the conventional structure, the monitor light from the semiconductor laser chip is reflected on the light receiving element surface and is again reflected on the semiconductor laser chip. And the oscillation becomes unstable as a result. For this reason, a distance of about 1 mm has conventionally been provided.

On the other hand, in the case of the present embodiment, the monitor light is incident on the side surface of the light receiving element 6. However, since the side surface of the light receiving element 6 is a surface which is usually cut by dicing cut, the The surface has a fine uneven structure. Therefore, since the light is not a mirror surface such as a carrier diffusion surface, light is easily incident on the surface. For this reason,
It can be close to the above-mentioned distance.

As described above, the monitor light 15 from the semiconductor laser chip 5 can be received by the light receiving element 6 at a close position, so that the efficiency of photoelectric conversion can be further improved.

In the semiconductor laser device having the structure shown in FIG. 1, the output current of the light receiving element was 0.02 mA when the laser output was 5 mW. As a result, the semiconductor laser device could be driven by APC. In the prototype, the diameter φ
Outer dimensions of 5.0 mm and thickness t2.8 mm were realized.
In the conventional structure, the diameter is 8.2 mm and the thickness is t4.8.
mm, it was possible to considerably reduce the size.

FIG. 2 is a circuit diagram showing an example of an APC drive circuit for a semiconductor laser.

The same functional portions as those in FIG. 1 are denoted by the same reference numerals. The dotted line part 20 is an APC drive circuit part, and the light receiving element 6 receives the monitor light 15 of the semiconductor laser chip 5 to detect the optical output of the semiconductor laser chip 5 and control so as to maintain a constant output.

As described above, according to the present embodiment, the light from the semiconductor laser chip 5 is received on the side surface perpendicular to the diffusion surface 13 of the light receiving element 6 so that downsizing can be realized. A high output electrical signal sufficient to APC drive the device can also be obtained.

FIG. 3 is a perspective view of a semiconductor laser device according to another embodiment of the present invention. In this embodiment, the arrangement relationship between the semiconductor laser chip and the light receiving element shown in FIG. 1 is applied to a semiconductor laser device using a circular metal eyelet type stem.

As shown in FIG. 3, a semiconductor laser chip 22 and a light receiving element 23 are mounted on a stem 21 provided on a circular metal plate 20. Reference numeral 24 denotes a prism, and reference numerals 25 to 27 denote lead terminals. The lead terminal 25 and the semiconductor laser chip 22, and the lead terminal 27 and the light receiving element 23 are wire-bonded with gold wires 24, respectively. The lead terminal 26 is integral with the stem 21. The positional relationship among the semiconductor laser chip 22, the light receiving element 23, and the prism 24 is the same as that in FIG.

According to the above structure, the semiconductor laser chip 2
At the time of wire bonding of the light receiving element 2 and the light receiving element 23, it is only necessary to bring the capillary closer than the Z direction, and there is no complicated step of changing the position of the apparatus for each wire bonding of each element as in the conventional example of FIG.

In this semiconductor laser device,
When the laser output is 5 mW, the output of the light receiving element is 0.0
2 mA was obtained. This allows the semiconductor laser device to be APC
Can be driven. The diameter of this semiconductor laser device is φ
4.5. The diameter of the device having the conventional structure, for example, as shown in FIG. 7, is φ5.6, and the size can be reduced as compared with the conventional example.

FIG. 4 is a sectional view of a semiconductor laser device according to still another embodiment of the present invention. Here,
Only the positional relationship between the semiconductor laser chip and the light receiving element will be described in an enlarged view.

Generally, the light emitting point of a semiconductor laser chip is
It is located very close to the die bonding surface of the chip. In particular, in the active layer lower type (Thin-Cap type) semiconductor laser chip, there is a light emitting point at a position of 1 to 10 μm from the die bonding surface. When such a semiconductor laser chip is used, the region contributing to the photoelectric conversion inside the light receiving element facing the semiconductor laser chip is located closer to the die bonding surface.
The photoelectric conversion efficiency is good, and the output signal level of the light receiving element increases.

In the present embodiment, taking the above points into consideration,
The carrier diffusion surface side is die-bonded to the stem. Specifically, as shown in FIG. 4, the active layer is located below the active layer (T
A (hin-Cap type) semiconductor laser chip 31 and a light receiving element 32 opposed thereto are mounted. In the light receiving element 32, the carrier diffusion layer 33 side is die-bonded to the stem 30. Here, the thickness of the diffusion layer 33 is about 10 μm.

FIG. 5 shows a bonding state of the light receiving element 32 of FIG. 4 to the stem 30. In addition, the size of the light receiving element 32 is drawn relatively large.

4 and 5, reference numeral 34 denotes an SiO ₂ film, which is an insulating film for preventing the semiconductor substrate 35 of the light receiving element 32 from coming into electrical contact with the stem 30. Other distances between the side surface of the light receiving element 32 and the carrier diffusion layer 33, the width of the diffusion surface, the distance between the semiconductor laser chip 31 and the light receiving element 32, and the like are the same as those in the embodiments of FIGS. 36 is a monitor light, 37 is a semiconductor laser chip 31
Is a laser beam emitted from the front of the light receiving element, 38 is an upper electrode of the light receiving element 32, and 39 is an electrode formed on the entire diffusion surface of the diffusion layer 33 of the light receiving element 32.

In the semiconductor laser device having the above structure, when the laser output was 5 mW, the output current of the light receiving element 32 was 0.05 mA, and the APC drive was possible.

By the way, the depth f of the diffusion layer of the light receiving element 32 shown in FIGS. 4 and 5 is set to be equal to or greater than the distance between the light emitting point of the semiconductor laser chip 31 and the stem 30 so that the light receiving element 32 Can reliably receive the light from the semiconductor laser chip 31, and the photoelectric conversion efficiency can be sufficiently ensured.

Therefore, for example, as shown in FIG. 6, the position of the light emitting point of the semiconductor laser chip 40 is 5 from the die bonding surface.
When it is located at 0 μm, the light receiving element 4
It is desirable that the depth f of the first diffusion layer is also about 50 μm. 6, the distance from the side surface of the light receiving element 41 to the carrier diffusion layer 42, the width of the diffusion surface of the diffusion layer 42, the distance between the semiconductor laser chip 40 and the light receiving element 41, and the like are the same as those in FIGS. Is the same. The same functional portions as those in FIG. 4 are denoted by the same reference numerals.

In the embodiment shown in FIG.
At mW, the output current of the light receiving element was 0.07 mA.

FIG. 7 is a sectional view of still another embodiment of the present invention. Here, only the semiconductor laser chip and the light receiving element will be described. As shown in FIG. 6, a semiconductor laser chip 51 and a light receiving element 52 are mounted on a ceramic heat type substrate 50 (hereinafter simply referred to as a substrate 50). FIG. 4 shows the point at which light from the semiconductor laser chip 51 is incident on the side surface (surface perpendicular to the carrier diffusion surface) of the light receiving element 52 and the point at which the carrier diffusion surface side is die-bonded.
6 to FIG. FIG. 8 shows a state where the light receiving element 52 is mounted on the substrate 50. Here, the light receiving element 52 is drawn relatively large.

The feature of this embodiment is that patterns 53 and 54 are formed on the substrate 50 so as to be electrically connected to the anode and the cathode of the light receiving element 52, whereby the light receiving element 5 is formed.
2 is configured to take out the electric signal. In the figure,
55 is a film of SiO ₂ or the like, and this film 55
The light receiving element 52 is mounted so as to face the portion of the substrate 50 sandwiched between 3 and 34. Electrode 56 and circuit pattern 5
Reference numeral 4 denotes an insulating film that insulates the electrode 57 and the circuit pattern 53 so as not to contact each other. 58 is a diffusion layer of the light receiving element 52, 59 is an upper electrode, 60 and 61 are lower electrodes of the semiconductor laser chip 51, 62 is an upper electrode, 63
Is a monitor light, 64 is a laser beam from the front, and 65 is a wire.

According to the present embodiment, the output electric signal of the light receiving element 52 can be extracted from the electrode provided on the substrate 50, and the effect that wire bonding of the light receiving element 52 becomes unnecessary can be obtained.

This structure can be applied to both the lead frame type resin mold package shown in FIG. 1 and the metal eyelet type stem shown in FIG.

[0063]

As described above, in the semiconductor laser device of the present invention, the monitor light of the semiconductor laser chip is received on the side surface of the light receiving element, so that both elements are die-bonded in parallel to the same mounting surface. it can. Therefore, in the related art, since the two elements are installed at right angles to each other, it is sometimes necessary to approach the capillaries from different directions at the time of wire bonding of the respective elements. Since the capillary may be approached from the direction and wire-bonded, it is not necessary to perform the conventional work.

Further, since the monitor light is received on the side surface of the light receiving element, the area of the carrier diffusion surface of the light receiving element only needs to be equal to the provision of the electrodes, and the size can be reduced remarkably as compared with the conventional case (about 1/5). ). Also, at this time, if the structure is as it is, the output of the light receiving element cannot be sufficiently obtained as compared with the related art,
The present invention provides a structure for solving this problem.

[Brief description of the drawings]

FIGS. 1A to 1C are a perspective view, a sectional view, and a partially enlarged view of a light receiving element of a semiconductor laser device according to an embodiment of the present invention, respectively.

FIG. 2 is a circuit diagram illustrating an example of an APC drive circuit;

FIG. 3 is a perspective view showing another embodiment of the present invention.

FIG. 4 is a sectional view showing still another embodiment of the present invention.

FIG. 5 is a diagram showing a device mounted state of the embodiment of FIG. 4;

FIG. 6 is a sectional view showing still another embodiment of the present invention.

FIG. 7 is a sectional view showing still another embodiment of the present invention.

FIG. 8 is a diagram showing a device mounted state of the embodiment of FIG. 7;

FIGS. 9A and 9B are a perspective view and a cross-sectional view, respectively, of a conventional semiconductor laser device.

10A and 10B are a perspective view and a cross-sectional view of a semiconductor laser device according to another conventional example, respectively.

[Explanation of symbols]

 3 stem (mounting surface) 5 semiconductor laser chip 6 light receiving element

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hideki Ichikawa 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka Inside Sharp Corporation (72) Inventor Katsue Masui 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka F-term (for reference) 5F073 AB25 BA06 BA09 EA15 FA27 FA30 GA01 GA12 5F088 BA01 BA16 BB10 JA03 JA10 JA20

Claims (4)

[Claims] 1. A semiconductor laser chip comprising: a semiconductor laser chip; and a light receiving element for monitoring light emitted from an end face of the semiconductor laser chip opposite to a laser light emitting surface and detecting a light output of the semiconductor laser chip. In the semiconductor laser device, monitor light emitted from the semiconductor laser chip is
Light is received by a side surface portion having a fine uneven structure perpendicular to the carrier diffusion surface of the light receiving element, and the thickness of the side surface portion of the light receiving element from the mounting surface of the semiconductor laser chip is equal to the mounting of the semiconductor laser chip. A semiconductor laser device having a thickness greater than a thickness of the semiconductor laser chip from a surface. 2. The semiconductor laser device according to claim 1, wherein a distance between the semiconductor laser chip and the light receiving element is 300 to 500 μm. 3. A semiconductor laser chip comprising: a semiconductor laser chip; and a light receiving element for monitoring light emitted from an end surface of the semiconductor laser chip opposite to a laser light emitting surface and detecting a light output of the semiconductor laser chip. In the semiconductor laser device, monitor light emitted from the semiconductor laser chip is
A semiconductor device, wherein light is received by a side surface orthogonal to a carrier diffusion surface of the light receiving element and having a fine uneven structure, and a distance between the semiconductor laser chip and the light receiving element is 300 to 500 μm. Laser device. 4. The semiconductor laser device according to claim 1, wherein the semiconductor laser chip and the light receiving element are arranged in a package, and the semiconductor laser chip is mounted in the package. At least one electrode is wire-bonded to a lead terminal, and at least one electrode of the light receiving element is wire-bonded to a lead terminal.