JP2002064166A - Semiconductor device and manufacturing method thereof, and resin sealing device for semiconductor device - Google Patents
Semiconductor device and manufacturing method thereof, and resin sealing device for semiconductor deviceInfo
- Publication number
- JP2002064166A JP2002064166A JP2001169343A JP2001169343A JP2002064166A JP 2002064166 A JP2002064166 A JP 2002064166A JP 2001169343 A JP2001169343 A JP 2001169343A JP 2001169343 A JP2001169343 A JP 2001169343A JP 2002064166 A JP2002064166 A JP 2002064166A
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- resin
- semiconductor device
- bonding wire
- connection terminal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
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- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
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- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
(57)【要約】
【課題】 ワイヤの短絡を有効に防止するとともに、手
間がかからず効率のよい製造工程を実現する半導体装置
およびその製造方法、ならびに半導体装置の樹脂封止装
置を提供する。
【解決手段】 半導体チップ１のチップ電極１ａと外部
回路に対する接続用端子２とがボンディングワイヤ３を
介して接続される。ボンディングワイヤ３の少なくとも
一部もしくは全部が第１の樹脂４により絶縁コーティン
グされ、前記半導体チップ１、ボンディングワイヤ３お
よび接続用端子２を含む領域が第２の樹脂５により絶縁
コーティングされる。第１の樹脂４は、第２の樹脂５の
端面５ａ内側領域にある接続用端子２にコーティングさ
れる。
PROBLEM TO BE SOLVED: To provide a semiconductor device, a manufacturing method thereof, and a resin sealing device for a semiconductor device, which effectively prevent a short circuit of a wire, and realizes an efficient manufacturing process without labor. . SOLUTION: A chip electrode 1a of a semiconductor chip 1 and a connection terminal 2 for an external circuit are connected via a bonding wire 3. At least a part or all of the bonding wire 3 is insulatively coated with the first resin 4, and a region including the semiconductor chip 1, the bonding wire 3 and the connection terminal 2 is insulatively coated with the second resin 5. The first resin 4 is coated on the connection terminal 2 in the region inside the end face 5 a of the second resin 5.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、特にリードフレー
ム等を用いて構成される樹脂封止型の半導体装置および
その製造方法ならびに半導体装置の樹脂封止に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device formed by using a lead frame and the like, a method of manufacturing the same, and a resin seal of the semiconductor device.
【０００２】[0002]
【従来の技術】半導体装置の製造工程で用いられるボン
ディングワイヤは、たとえば金、銅あるいはアルミニウ
ム等でなる導電性のワイヤがそのまま使用されていた。
このように裸のボンディングワイヤで接続していたが、
高密度の接続によりボンディングワイヤ間等で短絡現象
が生じる場合があった。特に高密度化が進むほどワイヤ
間ピッチが小さくなり、この問題が大きくなる。2. Description of the Related Art As a bonding wire used in a manufacturing process of a semiconductor device, a conductive wire made of, for example, gold, copper or aluminum has been used as it is.
Although it was connected with a bare bonding wire like this,
Due to the high-density connection, a short-circuit phenomenon may occur between the bonding wires. In particular, as the density increases, the pitch between wires becomes smaller, and this problem becomes greater.
【０００３】ワイヤ同士あるいはワイヤと他の導電部と
の接触による短絡を防止すべく、予め絶縁材料をコーテ
ィングしたワイヤを用いて接続する方法が考案されてい
る。ところが、予め被覆したワイヤを接合するのは極め
て難しく、必ずしも十分な接合強度を確保することがで
きない。[0003] In order to prevent a short circuit due to contact between the wires or between the wires and another conductive portion, a method of connecting using wires coated with an insulating material in advance has been devised. However, it is extremely difficult to join wires that have been coated in advance, and it is not always possible to secure sufficient joining strength.
【０００４】そこで、たとえば、特開昭５２−７０６５
７号公報に記載のワイヤボンディング装置のように、キ
ャピラリーの案内部に所定の粘着度を有する液状絶縁材
を供給する絶縁材供給器を備えたものが知られている。
また、特開昭５５−３８０１４号公報に記載のワイヤボ
ンディング装置では、電極間を接続するワイヤの周囲を
液状の樹脂で被覆する被覆手段を備えている。Therefore, for example, Japanese Patent Application Laid-Open No. 52-7065 discloses
As a wire bonding apparatus described in Japanese Patent Application Laid-Open No. 7-107, there is known a device provided with an insulating material supply device for supplying a liquid insulating material having a predetermined adhesiveness to a guide portion of a capillary.
Further, the wire bonding apparatus described in Japanese Patent Application Laid-Open No. 55-38014 is provided with a coating means for coating the periphery of the wire connecting between the electrodes with a liquid resin.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、この種
の半導体装置あるいはその製造装置であるワイヤボンデ
ィング装置において、前述したように絶縁被覆を施した
ワイヤは接合が困難である。また、ワイヤボンディング
の際、あるいはワイヤボンディング後にワイヤのみコー
ティングする方法は極めて手間がかかり、工程数の増加
をもたらす。However, in a semiconductor device of this type or a wire bonding apparatus which is an apparatus for manufacturing the same, it is difficult to bond a wire coated with an insulation as described above. In addition, the method of coating only the wire at the time of wire bonding or after the wire bonding is extremely troublesome, resulting in an increase in the number of steps.
【０００６】本発明は、かかる実情に鑑み、ワイヤの短
絡を有効に防止するとともに、手間がかからず効率のよ
い製造工程を実現する半導体装置およびその製造方法並
びに半導体装置の樹脂封止装置を提供することを目的と
する。In view of the above circumstances, the present invention provides a semiconductor device, a method for manufacturing the same, and a resin sealing device for the semiconductor device, which effectively prevent a short circuit of a wire and realizes an efficient manufacturing process without labor. The purpose is to provide.
【０００７】[0007]
【課題を解決するための手段】本発明の半導体装置は、
半導体チップのチップ電極と外部回路に対する接続用端
子とがボンディングワイヤを介して接続される半導体装
置であって、前記ボンディングワイヤの少なくとも一部
もしくは全部が第１の樹脂により絶縁コーティングさ
れ、前記半導体チップ、前記ボンディングワイヤおよび
前記接続用端子を含む領域が第２の樹脂により絶縁コー
ティングされることを特徴とする。According to the present invention, there is provided a semiconductor device comprising:
A semiconductor device in which a chip electrode of a semiconductor chip and a connection terminal for an external circuit are connected via a bonding wire, wherein at least a part or all of the bonding wire is insulated and coated with a first resin, and the semiconductor chip A region including the bonding wire and the connection terminal is insulated and coated with a second resin.
【０００８】また、本発明の半導体装置において、前記
第１の樹脂は、前記第２の樹脂の端面内側領域にある前
記接続用端子にコーティングされることを特徴とする。Further, in the semiconductor device according to the present invention, the first resin is coated on the connection terminal in a region inside an end face of the second resin.
【０００９】また、本発明の半導体装置において、前記
第１の樹脂の前記第２の樹脂に対する体積率が１０パー
セント以下であることを特徴とする。Further, in the semiconductor device according to the present invention, a volume ratio of the first resin to the second resin is 10% or less.
【００１０】また、本発明の半導体装置において、第２
の樹脂がその樹脂中にセラミックスフィラーを含む半導
体封止樹脂であり、第１の樹脂中にはセラミックスフィ
ラーが含まれないか、含有率が第２の樹脂中よりも低い
ことを特徴とする。In the semiconductor device of the present invention, the second
The first resin is a semiconductor sealing resin containing a ceramic filler in the resin, and the first resin does not contain the ceramic filler or has a lower content than the second resin.
【００１１】また、本発明の半導体装置において、前記
第1の樹脂がエポキシ樹脂、ポリアリレート樹脂、ポリ
イミド樹脂、アクリル樹脂およびポリウレタン樹脂のい
ずれかの中から選ばれることを特徴とする。Further, in the semiconductor device according to the present invention, the first resin is selected from any one of an epoxy resin, a polyarylate resin, a polyimide resin, an acrylic resin and a polyurethane resin.
【００１２】また、本発明の半導体装置において、前記
接続用端子は、基板またはリードフレームにより形成さ
れることを特徴とする。Further, in the semiconductor device according to the present invention, the connection terminal is formed by a substrate or a lead frame.
【００１３】また、本発明の半導体装置において、前記
第1の樹脂が隣接するワイヤ間を連接していることを特
徴とする。Further, in the semiconductor device according to the present invention, the first resin is connected between adjacent wires.
【００１４】また、本発明の半導体装置の製造方法は、
半導体チップのチップ電極と外部回路に対する接続用端
子とがボンディングワイヤを介して接続される半導体装
置の製造方法であって、前記チップ電極と前記接続用端
子を前記ボンディングワイヤにより接続する工程と、前
記ボンディングワイヤの特定部分を第1の樹脂により絶
縁コーティングする工程と、前記半導体チップ、前記ボ
ンディングワイヤおよび前記接続用端子を含む領域を第
2の樹脂により絶縁コーティングする工程と、を備えた
ことを特徴とする。Further, a method of manufacturing a semiconductor device according to the present invention
A method of manufacturing a semiconductor device in which a chip electrode of a semiconductor chip and a connection terminal to an external circuit are connected via a bonding wire, wherein the step of connecting the chip electrode and the connection terminal with the bonding wire; A step of insulatingly coating a specific portion of the bonding wire with a first resin; and forming a region including the semiconductor chip, the bonding wire and the connection terminal in a first resin.
(2) a step of insulating coating with a resin.
【００１５】また、本発明の半導体装置の製造方法にお
いて、前記ボンディングワイヤの特定部分として、凸状
湾曲郡を含んでいることを特徴とする。Further, in the method of manufacturing a semiconductor device according to the present invention, the specific portion of the bonding wire includes a convexly curved group.
【００１６】また、本発明の半導体装置の製造方法にお
いて、第１の樹脂により絶縁コーティングする際、前記
ボンディングワイヤが下側に位置するようにして、その
特定部分を第１の樹脂の樹脂溶液に浸漬することを特徴
とする。In the method of manufacturing a semiconductor device according to the present invention, when performing insulating coating with the first resin, the bonding wire is positioned on the lower side, and a specific portion thereof is placed in a resin solution of the first resin. It is characterized by immersion.
【００１７】また、本発明の製造方法において、第１の
樹脂により絶縁コーティングする際、前記ボンディング
ワイヤの特定部分を樹脂噴霧雰囲気中に保持することを
特徴とする。Further, in the manufacturing method of the present invention, when insulating coating is performed with the first resin, a specific portion of the bonding wire is held in a resin spray atmosphere.
【００１８】また、本発明の半導体装置の製造方法にお
いて、前記樹脂噴霧雰囲気を樹脂溶液に超音波振動を与
えることにより、生成させることを特徴とする。In the method of manufacturing a semiconductor device according to the present invention, the resin spray atmosphere is generated by applying ultrasonic vibration to a resin solution.
【００１９】また、本発明の半導体装置の製造方法にお
いて、第１の樹脂により絶縁コーティングする際、第１
の樹脂が隣接するボンディングワイヤ間を連接すること
を特徴とする。Further, in the method of manufacturing a semiconductor device according to the present invention, when the insulating coating is performed with the first resin,
Is characterized by connecting adjacent bonding wires.
【００２０】また、本発明の半導体装置の樹脂封止装置
は、半導体チップのチップ電極と外部回路に対する接続
用端子とがボンディングワイヤを介して接続される半導
体装置を樹脂封止する装置であって、前記半導体装置を
保持するステージ部と、前記ボンディングワイヤの少な
くとも一部または全部に第１の樹脂を絶縁コーティング
する第1樹脂供給部または樹脂供給ノズルと、前記ボン
ディングワイヤおよび前記接続用端子を含む領域に第２
の樹脂を絶縁コーティングする第２樹脂供給部と、前記
樹脂を成型する樹脂成型部とを有することを特徴とす
る。The resin sealing device for a semiconductor device according to the present invention is a device for resin sealing a semiconductor device in which a chip electrode of a semiconductor chip and a terminal for connection to an external circuit are connected via a bonding wire. A stage portion for holding the semiconductor device, a first resin supply portion or a resin supply nozzle for insulatingly coating at least a part or all of the bonding wire with a first resin, and the bonding wire and the connection terminal. Second to region
A second resin supply section for insulatingly coating the resin and a resin molding section for molding the resin.
【００２１】本発明によれば、樹脂封止型半導体装置に
おいて樹脂封止の前にボンディングワイヤの特定部分を
第１の樹脂により絶縁コーティングしておくことで、ボ
ンディングワイヤ相互間、ボンディングワイヤおよびチ
ップ間などの短絡を防止することができる。According to the present invention, in a resin-encapsulated semiconductor device, a specific portion of a bonding wire is insulated and coated with a first resin before resin encapsulation, so that the bonding wires and the bonding wire and the chip are separated. A short circuit such as a short circuit can be prevented.
【００２２】[0022]
【発明の実施の形態】以下、図面に基づき、本発明によ
る半導体装置およびその製造方法、ならびに半導体装置
の樹脂封止装置の好適な実施の形態を説明する。図１
は、この実施形態における半導体装置の構成例を示して
いる。図１において、半導体チップ１のチップ電極１ａ
と外部回路に対する接続用端子２とがボンディングワイ
ヤ３を介して接続されている。ボンディングワイヤ３の
少なくとも一部もしくは全部が第１の樹脂４(一点鎖線
により示されている)により絶縁コーティングされ、半
導体チップ１、ボンディングワイヤ３および接続用端子
２を含む領域が第２の樹脂５により絶縁コーティングさ
れている。DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a semiconductor device according to the present invention, a method of manufacturing the same, and a resin sealing device for a semiconductor device will be described below with reference to the drawings. FIG.
Shows a configuration example of a semiconductor device in this embodiment. In FIG. 1, a chip electrode 1a of a semiconductor chip 1 is shown.
And a connection terminal 2 for an external circuit are connected via a bonding wire 3. At least a part or all of the bonding wire 3 is insulated and coated with a first resin 4 (indicated by a dashed line), and a region including the semiconductor chip 1, the bonding wire 3 and the connection terminal 2 is formed of a second resin 5. Insulated coating.
【００２３】ここで、本実施形態では接続用端子２は、
図２に示したようにリードフレーム１０の一部に形成さ
れる。リードフレーム１０はたとえば図示例のように、
タイバー１１で結合された多数のリード端子１２を有
し、各リード端子１２の中央部に位置するパッド１３上
に半導体チップ１が搭載固定される。すなわち、この例
では接続用端子２はリード端子１２により構成される。Here, in this embodiment, the connection terminal 2 is
As shown in FIG. 2, it is formed on a part of the lead frame 10. The lead frame 10 is, for example, as shown in FIG.
The semiconductor chip 1 has a large number of lead terminals 12 connected by tie bars 11 and is mounted and fixed on a pad 13 located at the center of each lead terminal 12. That is, in this example, the connection terminal 2 is constituted by the lead terminal 12.
【００２４】なお、半導体チップ１はこの例ではたとえ
ば５ｍｍ角の寸法を有し、その上面周縁部に沿って２０
０個のチップ電極１ａが配設されている。そして、各チ
ップ電極１ａに対応して２００個のリード端子１２が構
成されている。The semiconductor chip 1 has a size of, for example, 5 mm square in this example, and has a size of 20 mm along the periphery of the upper surface.
Zero chip electrodes 1a are provided. And 200 lead terminals 12 are formed corresponding to each chip electrode 1a.
【００２５】第１の樹脂４は、第２の樹脂５よりもコー
ティング時には低粘度である。具体的には、その粘度
は、３０００〜７０００ｃＰ、好ましくは２０００〜５
０００ｃＰの範囲である。また、図１のように第１の樹
脂４は、好適にはボンディングワイヤ３の凸状の湾曲部
まわりにコーティングされる。なお、図示のように半導
体チップ１の上面にコーティングされてもよい。The first resin 4 has a lower viscosity at the time of coating than the second resin 5. Specifically, its viscosity is 3000-7000 cP, preferably 2000-5 cP.
000 cP. Further, as shown in FIG. 1, the first resin 4 is preferably coated around the convex curved portion of the bonding wire 3. Note that the upper surface of the semiconductor chip 1 may be coated as shown.
【００２６】この場合、第２の樹脂５の端面５ａを限度
として、その内側領域の接続用端子２(リード端子１２)
がコーティングされるようにしてもよい。つまり、リー
ド端子１２の第２の樹脂５から突出する部分は、その後
メッキ処理等が行われるため、そのような突出部分に第
１の樹脂４が付着しないようにする。また、第１の樹脂
４は必要以上に厚くしないようにし、好適には少なくと
も絶縁耐圧を確保し得る０．２μｍから２０μｍ程度が
好ましい。第１の樹脂４と第２の樹脂５の量を体積比率
でみると、第１の樹脂４の第２の樹脂５に対する体積率
が１０パーセント以下であることが好ましい。In this case, the connection terminal 2 (lead terminal 12) in the inner area of the end face 5a of the second resin 5 is limited.
May be coated. That is, the portion of the lead terminal 12 protruding from the second resin 5 is subjected to a plating process or the like, so that the first resin 4 does not adhere to such a protruding portion. Further, the first resin 4 is not thickened more than necessary, and preferably has a thickness of about 0.2 μm to 20 μm, which can ensure at least a withstand voltage. In terms of the volume ratio of the first resin 4 and the second resin 5, the volume ratio of the first resin 4 to the second resin 5 is preferably 10% or less.
【００２７】この実施形態において、第１の樹脂４がエ
ポキシ樹脂、ポリアリレート樹脂、ポリイミド樹脂、ア
クリル樹脂およびポリウレタン樹脂のいずれかの中から
選ばれる。第２の樹脂５は樹脂中にセラミックスフィラ
ーを含む半導体封止樹脂、好適にはエポキシ樹脂とす
る。第１の樹脂中にはセラミックスフィラーが含まれな
いほうが、ワイヤとの密着性があがるので好ましく、ま
た、セラミックスフィラーが含まれる場合でも含有率が
第２の樹脂中よりも低いことで、密着性が確保される。In this embodiment, the first resin 4 is selected from any of an epoxy resin, a polyarylate resin, a polyimide resin, an acrylic resin, and a polyurethane resin. The second resin 5 is a semiconductor sealing resin containing a ceramic filler in the resin, preferably an epoxy resin. It is preferable that the first resin does not contain the ceramic filler because the adhesion to the wire is increased, and even when the ceramic filler is included, the content is lower than that in the second resin, so that the adhesion is low. Is secured.
【００２８】さらに、本発明の変形例を説明する。上述
の実施形態で、この第１の樹脂４が隣接するボンディン
グワイヤ間を連接しても構わない。図３にワイヤ間に樹
脂が連接した例を示している。Further, a modified example of the present invention will be described. In the above embodiment, the first resin 4 may connect adjacent bonding wires. FIG. 3 shows an example in which the resin is connected between the wires.
【００２９】図３に示すように、半導体のチップ１の電
極は、リードフレーム１０のリード端子１２とボンディ
ングワイヤ３で接続されている。このボンディングワイ
ヤの中央部付近を第１の樹脂４でコーティングし、ワイ
ヤ間を樹脂で連接している。ワイヤ間に樹脂が存在する
ことで、第２の樹脂５でコーティングされる際に、第２
の樹脂の流動によるワイヤの変形を防止し、ワイヤ間の
絶縁性を確実に確保することができる。ここで、第１の
樹脂４のコーティングは、ワイヤの上面のみでもよく、
連接する樹脂によって、ワイヤが一定の間隔を保って、
絶縁されるものであれば、必ずしもワイヤの全周をコー
ティングする必要はない。As shown in FIG. 3, the electrodes of the semiconductor chip 1 are connected to the lead terminals 12 of the lead frame 10 by the bonding wires 3. The vicinity of the center of the bonding wire is coated with the first resin 4, and the wires are connected with the resin. Due to the presence of the resin between the wires, the second resin 5
The deformation of the wires due to the flow of the resin can be prevented, and the insulation between the wires can be reliably ensured. Here, the coating of the first resin 4 may be only on the upper surface of the wire,
With the connecting resin, the wire keeps a certain interval,
It is not necessary to coat the entire circumference of the wire as long as it is insulated.
【００３０】つぎに、この実施形態における半導体装置
の製造方法の例を説明する。まず、前述のように半導体
チップ１は、リードフレーム１０のパッド１３上に搭載
固定される(図２)。つぎに、リードフレーム１０に搭載
された半導体チップ１は、ボンディングによってボンデ
ィングワイヤ３のワイヤボンディングが行われる。Next, an example of a method for manufacturing a semiconductor device according to this embodiment will be described. First, as described above, the semiconductor chip 1 is mounted and fixed on the pads 13 of the lead frame 10 (FIG. 2). Next, the semiconductor chip 1 mounted on the lead frame 10 is subjected to wire bonding of the bonding wires 3 by bonding.
【００３１】図４は、このボンディング工程を示してい
る。ボンディングワイヤ３は、まず、図４（Ａ）のよう
に、ボンデイング装置１００のキャピラリ１０１から給
送され、半導体チップ１のチップ電極１ａ(ファースト
側)にボンディングされる。続いて、チップ電極１ａに
対応するリード端子１２(セカンド側)にボンディングさ
れる。この例では、半導体チップ１(の上面)とリード端
子１２(の接合面)の段差ｈ１は３５０μｍ程度である。
また、ボンディングされたボンディングワイヤ３のワイ
ヤ長は６ｍｍ、半導体チップ１の上面からのループ高さ
(凸状湾曲部)ｈ２は約２００μｍである。FIG. 4 shows this bonding step. First, as shown in FIG. 4A, the bonding wire 3 is fed from the capillary 101 of the bonding apparatus 100 and is bonded to the chip electrode 1a (first side) of the semiconductor chip 1. Subsequently, bonding is performed to the lead terminal 12 (second side) corresponding to the chip electrode 1a. In this example, the step h1 between (the upper surface of) the semiconductor chip 1 and (the bonding surface of) the lead terminal 12 is about 350 μm.
The wire length of the bonded bonding wire 3 is 6 mm, and the loop height from the upper surface of the semiconductor chip 1 is
(Convex curved portion) h2 is about 200 μm.
【００３２】すべてのチップ電極１ａとそれらに対応す
るリード端子１２に対してボンディングが行われ図３
（Ｂ）のように半導体チップ１の周囲にボンディングワ
イヤ３が接続される。Bonding is performed on all the chip electrodes 1a and the corresponding lead terminals 12, and FIG.
A bonding wire 3 is connected around the semiconductor chip 1 as shown in FIG.
【００３３】ボンディングの完了後、図５（Ａ）に示す
ように、ボンディングワイヤ３が下側になるように、半
導体チップ１を搭載するリードフレーム１０を上下反転
させる。そして、図示のように第１の樹脂４の樹脂溶液
４′を溜めた樹脂容器１０２の上方にて、リードフレー
ム１０を水平に保持する。この場合、リードフレーム１
０の側縁部の適所を支持し、樹脂容器１０２の上方で昇
降可能に構成された昇降装置１０３を用いることができ
る。After the completion of the bonding, as shown in FIG. 5A, the lead frame 10 on which the semiconductor chip 1 is mounted is turned upside down so that the bonding wires 3 are on the lower side. Then, as shown in the figure, the lead frame 10 is horizontally held above the resin container 102 in which the resin solution 4 'of the first resin 4 is stored. In this case, lead frame 1
An elevating device 103 configured to support an appropriate position of the side edge portion of 0 and to be able to ascend and descend above the resin container 102 can be used.
【００３４】この例では、第１の樹脂４としてポリイミ
ド樹脂が選ばれる。樹脂容器１０２にはオーバフロー管
１０２ａが付設されており、ポリイミド樹脂の樹脂溶液
４′の液面高さは、常に一定に保持されている。In this example, a polyimide resin is selected as the first resin 4. The resin container 102 is provided with an overflow pipe 102a, and the liquid level of the resin solution 4 'of the polyimide resin is always kept constant.
【００３５】つぎに、昇降装置１０３によってリードフ
レーム１０を水平に保持したまま、すなわち樹脂溶液
４′の液面と平行に降下させる。そして、図５（Ｂ）の
ように、少なくともボンディングワイヤ３の一部または
全部を一旦浸漬させる。この例では、半導体チップ１の
上面（図５（Ｂ）においては下側）が樹脂溶液４′の液
面と接触するように、昇降装置１０３により高さを位置
決め制御する。Next, the lead frame 10 is lowered while being held horizontally by the elevating device 103, that is, parallel to the liquid surface of the resin solution 4 '. Then, as shown in FIG. 5B, at least part or all of the bonding wire 3 is temporarily immersed. In this example, the height of the semiconductor chip 1 is controlled by the elevation device 103 so that the upper surface (the lower side in FIG. 5B) is in contact with the liquid surface of the resin solution 4 ′.
【００３６】図示例からも分かるように、半導体チップ
１とリード端子１２の間に段差ｈ１が設定されているた
め(図３参照)、ボンディングワイヤ３を樹脂溶液４′に
浸漬した際、リ一ド端子１２は浸漬されないようにする
ことができる。As can be seen from the illustrated example, since the step h1 is set between the semiconductor chip 1 and the lead terminal 12 (see FIG. 3), when the bonding wire 3 is immersed in the resin solution 4 ', The terminal 12 can be prevented from being immersed.
【００３７】つぎに、半導体チップ１の上面およびボン
ディングワイヤ３が均一に樹脂溶液４′で濡れたことを
確認した後、昇降装置１０３によってリードフレーム１
０を上昇させる。ボンディングワイヤ３から樹脂溶液
４′の液滴が完全に落ちきるまで、たとえば１０〜６０
秒間程度リードフレーム１０を静止して保持する。そし
て、半導体チップ１を搭載するリードフレーム１０は、
図示しない加熱乾燥炉内で保持される。この乾燥によ
り、ボンディングワイヤ３にコートされた樹脂溶液４′
は硬化し、これにより第１の樹脂４が形成される。な
お、このときの乾燥、硬化条件は、たとえば２２０℃、
４５分間程度が好適である。Next, after confirming that the upper surface of the semiconductor chip 1 and the bonding wires 3 are uniformly wetted by the resin solution 4 ′, the lifting device 103 moves the lead frame 1.
Increase 0. Until the droplet of the resin solution 4 ′ is completely dropped from the bonding wire 3, for example, 10 to 60
The lead frame 10 is held stationary for about seconds. And the lead frame 10 on which the semiconductor chip 1 is mounted is
It is held in a heating and drying furnace (not shown). By this drying, the resin solution 4 ′ coated on the bonding wire 3 is formed.
Is cured, whereby the first resin 4 is formed. The drying and curing conditions at this time are, for example, 220 ° C.
About 45 minutes is suitable.
【００３８】乾燥、硬化条件を設定する場合、半導体チ
ップ１のチップ電極１ａにボンディングされたボンディ
ングワイヤ３(金ボール状部分)とチップ電極１ａのアル
ミニウムの拡散が進み過ぎて、ボンディングの接合信頼
性を低下させない範囲に設定することが重要である。す
なわち、温度Ｔ（℃）と時間ｔ（秒）の関係は、つぎの
（１）式により与えられる条件を満足し、樹脂が十分に
硬化していることが好ましい。 １５０００×√ｔｅｘｐ｛−５１００／（２７３＋Ｔ）｝＜１ （１）When the drying and curing conditions are set, the bonding wire 3 (gold ball portion) bonded to the chip electrode 1a of the semiconductor chip 1 and the aluminum of the chip electrode 1a diffuse too much, and the bonding reliability of the bonding is increased. It is important to set the value within a range that does not lower the value. That is, the relationship between the temperature T (° C.) and the time t (second) preferably satisfies the condition given by the following equation (1), and the resin is preferably sufficiently cured. 15000 × {exp} -5100 / (273 + T)} <1 (1)
【００３９】つぎに、第１の樹脂４のコーティング後、
リードフレーム１０に搭載された半導体チップ１は図６
のように、成形用金型１０４のキャビティ１０４ａ内に
セットされる。キャビティ１０４ａ内に第２の樹脂５の
樹脂溶液が注入され、所定時間経過後に金型１０４を離
型することにより、図１に示したように第２の樹脂５で
モールドされた半導体装置が得られる。第２の樹脂５と
しては、セラミックスフィラーを含むエポキシ樹脂が好
適である。Next, after coating the first resin 4,
The semiconductor chip 1 mounted on the lead frame 10 is shown in FIG.
Is set in the cavity 104a of the molding die 104 as shown in FIG. A resin solution of the second resin 5 is injected into the cavity 104a, and after a predetermined time has elapsed, the mold 104 is released, thereby obtaining a semiconductor device molded with the second resin 5 as shown in FIG. Can be As the second resin 5, an epoxy resin containing a ceramic filler is preferable.
【００４０】上述したように本発明の樹脂封止型半導体
装置を製造する際、第２の樹脂５による樹脂封止の前に
ボンディングワイヤ３の特定部分を第１の樹脂４により
絶縁コーティングしておく。これにより特にキャビティ
１０４ａ内に第２の樹脂５の樹脂溶液を注入するとき、
その樹脂流れでボンディングワイヤ３が変形し、あるい
は接触してもボンディングワイヤ３相互間、ボンディン
グワイヤ３およびチップ間などの短縮事故を防止するこ
とができる。As described above, when manufacturing the resin-encapsulated semiconductor device of the present invention, a specific portion of the bonding wire 3 is insulated and coated with the first resin 4 before the resin encapsulation with the second resin 5. deep. Thereby, particularly when the resin solution of the second resin 5 is injected into the cavity 104a,
Even if the bonding wires 3 are deformed or contacted by the resin flow, it is possible to prevent a shortening accident between the bonding wires 3 and between the bonding wires 3 and the chip.
【００４１】ここで、本発明の変形例を説明する。上述
の実施形態ではリードフレーム１０を用いて外部回路に
対する接続用端子２を形成する例を説明したが、図７に
示すような構成の半導体装置（たとえばＢＧＡ（Ball G
rid Array）等）に本発明を適用することができる。Here, a modified example of the present invention will be described. In the above-described embodiment, an example in which the connection terminal 2 for an external circuit is formed using the lead frame 10 has been described. However, a semiconductor device having a configuration as shown in FIG.
rid Array) etc.).
【００４２】図７において、外部回路に対する接続用端
子２は、ガラスエポキシ等でなる基板６上に形成された
端子電極７により構成される。半導体チップ１のチップ
電極１ａは、ボンディングワイヤ３を介して端子電極７
と接続されている。端子電極７は、基板６の貫通孔に形
成された導電部８を介して、該基板６の裏側で導電性金
属ボール９と接続される。In FIG. 7, a connection terminal 2 for an external circuit is constituted by a terminal electrode 7 formed on a substrate 6 made of glass epoxy or the like. The chip electrode 1a of the semiconductor chip 1 is connected to the terminal electrode 7 via the bonding wire 3.
Is connected to The terminal electrode 7 is connected to a conductive metal ball 9 on the back side of the substrate 6 via a conductive portion 8 formed in a through hole of the substrate 6.
【００４３】この例でも、ボンディングワイヤ３の少な
くとも一部もしくは全部が第１の樹脂４(一点鎖線によ
り示されている)により絶縁コーティングされ、半導体
チップ１、ボンディングワイヤ３および接続用端子２
(端子電極７)を含む領域が第２の樹脂５により絶縁コー
ティングされている。ボンディングワイヤ３の特定部分
を第１の樹脂４により絶縁コーティングしておくこと
で、上述の実施形態と同様にボンディングワイヤ３の短
絡を防止することができる。ワイヤの一部をコーティン
グする場合、ワイヤの長さ方向における一部分のコーテ
ィングの場合と、周方向の一部たとえば、ワイヤの上部
または側部のみの場合、また、長さ方向と周方向の両方
の場合がある。Also in this example, at least a part or the whole of the bonding wire 3 is insulated and coated with the first resin 4 (indicated by a dashed line), and the semiconductor chip 1, the bonding wire 3 and the connection terminal 2 are formed.
The region including the (terminal electrode 7) is insulated and coated with the second resin 5. By insulating a specific portion of the bonding wire 3 with the first resin 4, a short circuit of the bonding wire 3 can be prevented as in the above-described embodiment. When coating a part of the wire, a part of the wire in the longitudinal direction is coated, and a part in the circumferential direction, for example, only at the top or the side of the wire, and in both the longitudinal direction and the circumferential direction. There are cases.
【００４４】ここで、本発明の第１の樹脂のコーティン
グについての変形例を説明する。上述の実施形態では、
コーティングは樹脂溶液に浸漬して行ったが、樹脂噴霧
中にコーティングするべき特定部分を一定時間保持する
ことで、均一なコーティングを行うことができる。Here, a modified example of the first resin coating of the present invention will be described. In the above embodiment,
The coating was performed by dipping in a resin solution. However, by holding a specific portion to be coated during resin spraying for a certain period of time, uniform coating can be performed.
【００４５】図８は、樹脂噴霧噴霧雰囲気中でコーティ
ングする工程を示している。図において、樹脂容器１０
２の下部に超音波印加装置１０６が取り付けられ、樹脂
溶液１０７の上部に樹脂噴霧雰囲気１０５が形成され
る。リードフレームもしくは基板上に半導体チップ１が
固定され、ワイヤボンディングされた状態で、特定部分
のみが、樹脂噴霧雰囲気１０５に一定時間保持される。FIG. 8 shows a step of coating in a resin spray atomizing atmosphere. In the figure, a resin container 10
The ultrasonic wave applying device 106 is attached to the lower part of the resin solution 2, and the resin spray atmosphere 105 is formed above the resin solution 107. In a state where the semiconductor chip 1 is fixed on a lead frame or a substrate and wire-bonded, only a specific portion is held in the resin spray atmosphere 105 for a certain time.
【００４６】たとえば、ポリアリレート樹脂を１０％含
む溶液により噴霧雰囲気を形成して２分間保持すること
で、ワイヤを含む特定部分に０．２μｍ以上のコーティ
ングが可能であった。コーティング後は、加熱乾燥させ
た後、第２の樹脂で樹脂封止を行うことができる。ま
た、樹脂噴霧装置を用いて樹脂噴霧を発生させ、テフロ
ン（Ｒ）チューブなどの導管を介して導管の先端に取り
付けたノズルから、樹脂噴霧を噴出させ、ノズルを移動
させることにより、特定部分を順次コーティングするこ
とも可能である。また、樹脂噴霧雰囲気は、スプレーな
どにより発生させることも可能である。For example, by forming a spray atmosphere using a solution containing 10% of a polyarylate resin and maintaining the spray atmosphere for 2 minutes, it was possible to coat a specific portion including a wire of 0.2 μm or more. After the coating, the resin can be dried by heating and then sealed with a second resin. In addition, a resin spray is generated using a resin spray device, the resin spray is ejected from a nozzle attached to the tip of the conduit through a conduit such as a Teflon (R) tube, and the nozzle is moved to thereby specify a specific portion. It is also possible to coat sequentially. The resin spray atmosphere can be generated by spraying or the like.
【００４７】本発明の好適な実施形態を説明したが、本
発明はかかる実施形態にのみ限定されるものでなく、本
発明の範囲内で種々変形等が可能である。たとえば、ポ
リイミドフィルムを基板として、その基板上に接続用端
子を有するタイプの半導体装置の場合にも、上記実施形
態と同様に本発明を適用することができる。また、実施
形態で説明した具体的数値等は必要に応じて適宜変更す
ることができ、上記実施形態と同様な効果を得ることが
できる．Although the preferred embodiment of the present invention has been described, the present invention is not limited to only such an embodiment, and various modifications can be made within the scope of the present invention. For example, the present invention can be applied to a semiconductor device of a type in which a polyimide film is used as a substrate and a connection terminal is provided on the substrate, similarly to the above embodiment. Further, specific numerical values and the like described in the embodiment can be appropriately changed as needed, and the same effect as in the above embodiment can be obtained.
【００４８】つぎに、本発明の半導体装置の樹脂封止装
置の例を説明する。図９は、リードフレーム１０もしく
は基板上に半導体チップが固定され、半導体チップのチ
ップ電極とリードフレームもしくは基板のリード端子１
２がボンディングワイヤ３により接続された半導体装置
がステージ１１２上に保持された状態で、第１の樹脂４
をコーティングする樹脂供給ノズル１０８が設置されて
いる。この樹脂供給ノズル１０８から第１の樹脂４を吐
出して、ボンディングワイヤ３の一部分をコーティング
できるように、移動する移動機構１０９が設けられてい
る。第１の樹脂を硬化後、さらにステージからガイド１
１３上をリードフレーム１０もしくは基板が第２の樹脂
５によってコーティング成型する樹脂成型部１１０に移
動し、第２の樹脂の樹脂供給部１１１から樹脂成型部内
に樹脂が供給されることで、半導体装置がボンディング
ワイヤの短絡がない状態で樹脂成型される。Next, an example of a resin sealing device for a semiconductor device according to the present invention will be described. FIG. 9 shows that a semiconductor chip is fixed on a lead frame 10 or a substrate, and the chip electrodes of the semiconductor chip and the lead terminals 1 of the lead frame or the substrate.
In a state where the semiconductor device 2 is connected to the bonding wire 3 and held on the stage 112, the first resin 4
Is provided with a resin supply nozzle 108 for coating. A moving mechanism 109 that moves so that the first resin 4 is discharged from the resin supply nozzle 108 to coat a part of the bonding wire 3 is provided. After curing the first resin, guide 1
The lead frame 10 or the substrate moves to the resin molding unit 110 for coating and molding with the second resin 5 on the top 13, and the resin is supplied from the resin supply unit 111 of the second resin into the resin molding unit. Is molded with resin without a short circuit of the bonding wire.
【００４９】ここで、半導体装置の樹脂成型をおこなう
製造装置の好適な実施形態を示したが，上述の樹脂成型
部１１０の上部を開閉可能な構造とし、半導体装置を樹
脂成型部に固定した後、樹脂成型部１１０の上部を開い
た状態で、第１の樹脂供給ノズル１０８を樹脂成型部１
１０内に挿入して、上述のように第１の樹脂をコーティ
ング、硬化してから、ノズル１０８を退避した後、樹脂
成型部１１０の上部を閉じて、第２の樹脂５を樹脂成型
部内に供給することで、半導体装置の移動をすることな
く、樹脂成型することも可能である。樹脂成型部は、リ
ードフレームや基板の形状に合わせて、金型をそれぞれ
に作成して、金型内に樹脂を注入する方法が好ましい。
成型については、第１の樹脂、第２の樹脂の特性に応じ
て、最適な加熱温度と時間を選定することで、それぞれ
の効果を高めることができる。Here, a preferred embodiment of the manufacturing apparatus for performing resin molding of a semiconductor device has been described. The upper portion of the above-described resin molded portion 110 has a structure that can be opened and closed, and the semiconductor device is fixed to the resin molded portion. With the upper part of the resin molding unit 110 opened, the first resin supply nozzle 108 is connected to the resin molding unit 1.
After the first resin is coated and cured as described above, the nozzle 108 is retracted, the upper part of the resin molded part 110 is closed, and the second resin 5 is inserted into the resin molded part. By supplying the resin, resin molding can be performed without moving the semiconductor device. It is preferable that the resin molded portion be formed with a mold corresponding to the shape of the lead frame or the substrate, and to inject the resin into the mold.
As for the molding, the respective effects can be enhanced by selecting the optimal heating temperature and time according to the characteristics of the first resin and the second resin.
【００５０】[0050]
【発明の効果】以上説明したように本発明によれば、こ
の種の樹脂封止型半導体装置において、ボンディングワ
イヤの短絡を防止して品質性能に優れた半導体装置を提
供することができる。この場合、ボンディングワイヤの
コーティングに手間がかからず、簡単かつ効率的に所望
部分を絶縁し、樹脂成型することができる。As described above, according to the present invention, in this type of resin-encapsulated semiconductor device, it is possible to provide a semiconductor device excellent in quality performance by preventing a short circuit of a bonding wire. In this case, it is possible to easily and efficiently insulate the desired portion and perform resin molding without any trouble in coating the bonding wire.
【図１】本発明の実施形態における半導体装置の構成例
を示す図である。FIG. 1 is a diagram illustrating a configuration example of a semiconductor device according to an embodiment of the present invention.
【図２】本発明の実施形態に係る接続用端子を形成する
リードフレームの例を示す斜視図である。FIG. 2 is a perspective view showing an example of a lead frame forming a connection terminal according to the embodiment of the present invention.
【図３】本発明の実施形態における第1の樹脂がコーテ
ィングされた状態を示す図である。FIG. 3 is a diagram showing a state where a first resin is coated according to the embodiment of the present invention.
【図４】本発明の実施形態におけるチップ電極および接
続用端子間のボンディング工程とボンディング後の状態
を示す図である。FIG. 4 is a diagram illustrating a bonding step between a chip electrode and a connection terminal and a state after bonding according to the embodiment of the present invention.
【図５】本発明の実施形態における第1の樹脂のコーテ
ィング工程を示す図である。FIG. 5 is a view showing a step of coating a first resin in the embodiment of the present invention.
【図６】本発明の実施形態における第2の樹脂の樹脂モ
ールド工程を示す図である。FIG. 6 is a view illustrating a resin molding step of a second resin according to the embodiment of the present invention.
【図７】本発明の変形例に係る半導体装置の例を示す図
である。FIG. 7 is a diagram showing an example of a semiconductor device according to a modification of the present invention.
【図８】本発明の実施形態における第1の樹脂のコーテ
ィング工程を示す図である。FIG. 8 is a view showing a step of coating a first resin in the embodiment of the present invention.
【図９】本発明の実施形態における半導体装置の樹脂成
型装置を示す図である。FIG. 9 is a diagram showing a resin molding device for a semiconductor device according to an embodiment of the present invention.
１ 半導体チップ １ａ チップ電極 ２ 接続用端子 ３ ボンディングワイヤ ４ 第１の樹脂 ５ 第２の樹脂 ６ ガラスエポキシ基板 ７ 端子電極 ８ 導電部 ９ 導電性金属ボール １０ リードフレーム １１ タイバー １２ リード端子 １３ パッド １００ ボンディング装置 １０１ キャピラリ １０２ 樹脂容器 １０３ 昇降装置 １０４ 成形用金型 １０４ａ キャビティ １０５ 樹脂噴霧雰囲気 １０６ 超音波印加装置(振動素子付き) １０７ 樹脂溶液 １０８ 樹脂供給ノズル １０９ 移動機構 １１０ 樹脂成型部 １１１ 樹脂供給部 １１２ ステージ １１３ ステージガイド DESCRIPTION OF SYMBOLS 1 Semiconductor chip 1a Chip electrode 2 Connection terminal 3 Bonding wire 4 First resin 5 Second resin 6 Glass epoxy board 7 Terminal electrode 8 Conductive part 9 Conductive metal ball 10 Lead frame 11 Tie bar 12 Lead terminal 13 Pad 100 Bonding Apparatus 101 Capillary 102 Resin container 103 Lifting device 104 Molding mold 104a Cavity 105 Resin spray atmosphere 106 Ultrasonic wave applying device (with vibration element) 107 Resin solution 108 Resin supply nozzle 109 Moving mechanism 110 Resin molding unit 111 Resin supply unit 112 Stage 113 Stage Guide
───────────────────────────────────────────────────── フロントページの続き (72)発明者 巽 宏平 富津市新富20−１ 新日本製鐵株式会社技 術開発本部内 (72)発明者 宇野 智裕 富津市新富20−１ 新日本製鐵株式会社技 術開発本部内 (72)発明者 後藤 英二 大分県速見郡日出町川崎高尾4260 日本テ キサス・インスツルメンツ株式会社内 (72)発明者 中村 邦夫 埼玉県入間市大字狭山ヶ原158番地１ 株 式会社日鉄マイクロメタル内 Ｆターム(参考） 4M109 AA02 BA01 BA03 CA05 CA07 CA10 EB12 5F061 AA02 CA04 CA07 CA10 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Kohei Tatsumi 20-1 Shintomi, Futtsu City Nippon Steel Corporation Technology Development Division (72) Inventor Tomohiro Uno 20-1 Shintomi, Futtsu City Nippon Steel Corporation Technology Development Division (72) Inventor Eiji Goto 4260 Takao Kawasaki, Hiji-machi, Hami-gun, Oita Prefecture Inside Texas Instruments Corporation (72) Inventor Kunio Nakamura 158-1, Sayamagahara, Oaza, Iruma-shi, Saitama F-term in Nippon Steel Micrometal (reference) 4M109 AA02 BA01 BA03 CA05 CA07 CA10 EB12 5F061 AA02 CA04 CA07 CA10
Claims (14)
対する接続用端子とがボンディングワイヤを介して接続
される半導体装置であって、 前記ボンディングワイヤの少なくとも一部もしくは全部
が第１の樹脂により絶縁コーティングされ、 前記半導体チップ、前記ボンディングワイヤおよび前記
接続用端子を含む領域が、第２の樹脂により絶縁コーテ
ィングされることを特徴とする半導体装置。1. A semiconductor device in which a chip electrode of a semiconductor chip and a terminal for connection to an external circuit are connected via a bonding wire, wherein at least a part or all of the bonding wire is insulated by a first resin. And a region including the semiconductor chip, the bonding wires, and the connection terminals is insulated and coated with a second resin.
面内側領域にある前記接続用端子にコーティングされる
ことを特徴とする請求項１に記載の半導体装置。2. The semiconductor device according to claim 1, wherein the first resin is coated on the connection terminals in an inner region of an end face of the second resin.
る体積率が１０パーセント以下であることを特徴とする
請求項１または２に記載の半導体装置。3. The semiconductor device according to claim 1, wherein a volume ratio of the first resin to the second resin is 10% or less.
クスフィラーを含む半導体封止樹脂であり、第１の樹脂
中にはセラミックスフィラーが含まれないか、含有率が
第２の樹脂中よりも低いことを特徴とする請求項１〜３
のいずれか１項に記載の半導体装置。4. The second resin is a semiconductor encapsulation resin containing a ceramic filler in the resin, and the first resin does not contain a ceramic filler or has a content higher than that of the second resin. Characterized in that it is also low.
The semiconductor device according to claim 1.
リレート樹脂、ポリイミド樹脂、アクリル樹脂およびポ
リウレタン樹脂のいずれかの中から選ばれることを特徴
とする請求項４に記載の半導体装置。5. The semiconductor device according to claim 4, wherein said first resin is selected from one of an epoxy resin, a polyarylate resin, a polyimide resin, an acrylic resin, and a polyurethane resin.
レームにより形成されることを特徴とする請求項１〜５
のいずれか１項に記載の半導体装置。6. The connection terminal according to claim 1, wherein the connection terminal is formed by a substrate or a lead frame.
The semiconductor device according to claim 1.
接していることを特徴とする請求項１〜５記載のいずれ
か１項に記載の半導体装置。7. The semiconductor device according to claim 1, wherein the first resin connects adjacent wires.
対する接続用端子とがボンディングワイヤを介して接続
される半導体装置の製造方法であって、 前記チップ電極と前記接続用端子を前記ボンディングワ
イヤにより接続する工程と、 前記ボンディングワイヤの特定部分を第１の樹脂により
絶縁コ−ティングする工程と、前記半導体チップ、前記
ボンディングワイヤおよび前記接続用端子を含む領域を
第2の樹脂により絶縁コーティングする工程と、を備え
たことを特徴とする半導体装置の製造方法。8. A method of manufacturing a semiconductor device in which a chip electrode of a semiconductor chip and a connection terminal for an external circuit are connected via a bonding wire, wherein the chip electrode and the connection terminal are connected by the bonding wire. A step of insulatingly coating a specific portion of the bonding wire with a first resin; and a step of insulatingly coating a region including the semiconductor chip, the bonding wire and the connection terminal with a second resin. And a method for manufacturing a semiconductor device.
て、凸状湾曲部を含んでいることを特徹とする請求項８
に記載の半導体装置の製造方法。9. The method according to claim 8, wherein the specific portion of the bonding wire includes a convex curved portion.
13. The method for manufacturing a semiconductor device according to item 5.
る際、前記ボンディングワイヤが下側に位置するように
して、その特定部分を第１の樹脂の樹脂溶液に浸漬する
ことを特徴とする請求項８または９に記載の半導体装置
の製造方法。10. The method according to claim 8, wherein, when performing the insulation coating with the first resin, the bonding wire is positioned on the lower side, and a specific portion thereof is immersed in a resin solution of the first resin. Or a method for manufacturing a semiconductor device according to item 9.
る際、前記ボンディングワイヤの特定部分を樹脂噴霧雰
囲気中に保持することを特徴とする請求項８または９記
載の半導体装置の製造方法。11. The method according to claim 8, wherein a specific portion of the bonding wire is held in a resin spray atmosphere when the insulating coating is performed with the first resin.
波を与えることにより、生成させることを特徴とする請
求項１１に記載の半導体装置の製造方法。12. The method according to claim 11, wherein the resin spray atmosphere is generated by applying ultrasonic waves to a resin solution.
る際、第１の樹脂が隣接するボンディングワイヤ間を連
接することを特徴とする請求項８〜１２のいずれか１項
に記載の半導体装置の製造方法。13. The semiconductor device according to claim 8, wherein when the first resin is coated with the insulating resin, the first resin connects adjacent bonding wires. Method.
に対する接続用端子とがボンディングワイヤを介して接
続される半導体装置を樹脂封止する装置であって、前記
半導体装置を保持するステージ部と、前記ボンディング
ワイヤの少なくとも一部または全部に第１の樹脂をコー
ティングする第１樹脂供給部または樹脂供給ノズルと、
前記ボンディングワイヤおよび前記接続用端子を含む領
域に第２の樹脂をコーティングする第2樹脂供給部と、
前記樹脂を成型する樹脂成型部と、を有することを特徴
とする半導体装置の樹脂封止装置。14. A device for resin-sealing a semiconductor device in which a chip electrode of a semiconductor chip and a terminal for connection to an external circuit are connected via a bonding wire, wherein: a stage for holding the semiconductor device; A first resin supply unit or a resin supply nozzle for coating at least a part or all of the bonding wire with a first resin;
A second resin supply unit that coats a region including the bonding wire and the connection terminal with a second resin;
And a resin molding unit for molding the resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001169343A JP2002064166A (en) | 2000-06-06 | 2001-06-05 | Semiconductor device and manufacturing method thereof, and resin sealing device for semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000168745 | 2000-06-06 | ||
| JP2000-168745 | 2000-06-06 | ||
| JP2001169343A JP2002064166A (en) | 2000-06-06 | 2001-06-05 | Semiconductor device and manufacturing method thereof, and resin sealing device for semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| JP2002064166A true JP2002064166A (en) | 2002-02-28 |
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ID=26593394
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|---|---|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014187135A (en) * | 2013-03-22 | 2014-10-02 | Toyota Motor Corp | Semiconductor device |
| FR3058261A1 (en) * | 2016-11-03 | 2018-05-04 | Stmicroelectronics (Grenoble 2) Sas | METHOD FOR MAKING AN ELECTRICAL CONNECTION BETWEEN AN ELECTRONIC CHIP AND A SUPPORT PLATE AND ELECTRONIC DEVICE |
| JP2019009171A (en) * | 2017-06-21 | 2019-01-17 | スタンレー電気株式会社 | Semiconductor device |
| US10224306B2 (en) | 2016-11-03 | 2019-03-05 | Stmicroelectronics (Grenoble 2) Sas | Method for forming an electrical connection between an electronic chip and a carrier substrate and electronic device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02119147A (en) * | 1988-10-28 | 1990-05-07 | Hitachi Ltd | Manufacturing method for resin-encapsulated semiconductor devices |
| JPH03278550A (en) * | 1990-03-28 | 1991-12-10 | Nec Corp | Semiconductor device and its manufacture |
| JPH06349893A (en) * | 1993-06-02 | 1994-12-22 | Citizen Watch Co Ltd | Flip chip connection semiconductor package |
| JPH0745755A (en) * | 1991-11-27 | 1995-02-14 | Ricoh Co Ltd | Resin-sealed semiconductor device and manufacture thereof |
-
2001
- 2001-06-05 JP JP2001169343A patent/JP2002064166A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02119147A (en) * | 1988-10-28 | 1990-05-07 | Hitachi Ltd | Manufacturing method for resin-encapsulated semiconductor devices |
| JPH03278550A (en) * | 1990-03-28 | 1991-12-10 | Nec Corp | Semiconductor device and its manufacture |
| JPH0745755A (en) * | 1991-11-27 | 1995-02-14 | Ricoh Co Ltd | Resin-sealed semiconductor device and manufacture thereof |
| JPH06349893A (en) * | 1993-06-02 | 1994-12-22 | Citizen Watch Co Ltd | Flip chip connection semiconductor package |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014187135A (en) * | 2013-03-22 | 2014-10-02 | Toyota Motor Corp | Semiconductor device |
| FR3058261A1 (en) * | 2016-11-03 | 2018-05-04 | Stmicroelectronics (Grenoble 2) Sas | METHOD FOR MAKING AN ELECTRICAL CONNECTION BETWEEN AN ELECTRONIC CHIP AND A SUPPORT PLATE AND ELECTRONIC DEVICE |
| EP3319114A1 (en) * | 2016-11-03 | 2018-05-09 | STMicroelectronics (Grenoble 2) SAS | Process for making an electric connection between an electronic die and an support plate and electronic device |
| US10224306B2 (en) | 2016-11-03 | 2019-03-05 | Stmicroelectronics (Grenoble 2) Sas | Method for forming an electrical connection between an electronic chip and a carrier substrate and electronic device |
| US10643970B2 (en) | 2016-11-03 | 2020-05-05 | Stmicroelectronics (Grenoble 2) Sas | Method for forming an electrical connection between an electronic chip and a carrier substrate and electronic device |
| US11557566B2 (en) | 2016-11-03 | 2023-01-17 | Stmicroelectronics (Grenoble 2) Sas | Method for forming an electrical connection between an electronic chip and a carrier substrate and electronic device |
| US12170262B2 (en) | 2016-11-03 | 2024-12-17 | Stmicroelectronics (Grenoble 2) Sas | Method for forming an electrical connection between an electronic chip and a carrier substrate and electronic device |
| JP2019009171A (en) * | 2017-06-21 | 2019-01-17 | スタンレー電気株式会社 | Semiconductor device |
| JP7096649B2 (en) | 2017-06-21 | 2022-07-06 | スタンレー電気株式会社 | Semiconductor equipment |
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