JP2002056511A - Combined magnetic head and method of manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a clear recording pattern onto a magnetic recording medium, to eliminate bad influence on an adjacent track and to enhance recording density. SOLUTION: In a combined magnetic head 20 in which a magnetoresistive reproducing head part 22 for reproducing a signal recorded on the magnetic recording medium and an inductive recording head part 23 for recording a signal onto the magnetic recording medium are combined, magnetoresistive element parts 29, 30 and 31 have step parts at their both end parts and the upper surface of an upper layer gap layer 28 formed thereon is flattened.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite magnetic head in which a read-only head for reproducing a signal on a magnetic recording medium and a recording-only head for recording a signal on a magnetic recording medium are combined, and its manufacture. About the method.

[0002]

2. Description of the Related Art In recent years, a so-called thin-film magnetic head, in which components are stacked on a substrate by a so-called thin-film forming technique, has attracted attention as a magnetic head corresponding to high recording density. In this thin-film magnetic head, since each component such as a magnetic core and a coil is formed by a thin-film forming technique such as a plating method or a sputtering method, it is easy to make fine dimensions such as narrow track and narrow gap. It has the advantage that recording and reproduction at high resolution is possible. For this reason, thin-film magnetic heads are used in high-density recording and reproducing devices such as hard disk drives and tape streamers.

For example, in a hard disk drive, a magnetoresistive magnetic head (hereinafter referred to as an MR head) using a magnetoresistive effect as a read-only head, and an inductive magnetic head using electromagnetic induction as a write-only head. A so-called merge-type thin film magnetic head (hereinafter, referred to as a merge-type head) that is combined has been put to practical use.

Here, an example of the configuration of a merge type head is shown in FIG.
6 is shown. FIG. 66 is a schematic end view of the merge type head as viewed from the medium sliding surface side.

[0005] This merge type head is mounted on a substrate 100
A lower gap layer 103 and an upper gap layer 1 are provided between the lower shield layer 101 and the upper shield layer 102, respectively.
04, and a recording head in which a lower core layer 102 and an upper core layer 106 are arranged on the reproducing head to oppose each other with a magnetic gap layer 107 interposed therebetween. And a protective layer 108 is formed on the recording head.

Note that the upper shield layer 102 and the lower core layer 102 are the same member, and in the read head section,
A pair of magnetic shields is formed together with the lower shield layer 101, and in the recording head portion, the upper core layer 106
Together form a pair of magnetic cores.

[0007] The reproducing head has an MR element 105.
And a pair of permanent magnet films 109a and 109b for applying a bias magnetic field to the MR element 105, and for supplying a sense current to the MR element 105 on the pair of permanent magnet films 109a and 109b. A pair of conductive films 11
0a and 110b are provided, and the width between them is the reproduction track width S1.

On the other hand, the lower core layer 10
2 and an upper core layer 106, a thin film coil (not shown) for generating a magnetic field is provided, and a magnetic gap is formed by disposing the upper core layer 106 to face the lower core layer 102. The width of the upper core layer 106 is the recording track width S2.

In the merge type head configured as described above, the constituent elements of the reproducing head unit and the recording head unit are stacked on the substrate 100 by the thin film forming technique, so that the magnetic recording medium has a high resolution. This makes it possible to cope with a further increase in the density of the magnetic recording medium.

[0010]

By the way, the above-mentioned merge type head is mounted on, for example, a rotating drum, and is also used in a magnetic tape device which records and reproduces a signal on and from a magnetic tape by a helical scan method.

In this case, the merge type head is disposed on the outer peripheral surface of the rotating drum so as to be oblique to the direction substantially perpendicular to the running direction of the magnetic tape according to the azimuth angle. In the merge type head, the recording head unit records signals on the magnetic tape while sliding at high speed with the magnetic tape, and the reproducing head unit reproduces signals recorded on the magnetic tape. .

By the way, in the merge type head described above,
A pair of permanent magnet films 109a, 109b and conductive films 110a, 110b provided at both ends of the MR element 105 form a step, and a lower core layer constituting a recording head is formed on such a step. 102, magnetic gap layer 10
7 and the upper core layer 106 are sequentially laminated.

Therefore, in the conventional merge type head, as shown in FIG. 67, a step is finally generated in the magnetic gap of the recording head portion, and as a result, the recording pattern S2 ′ recorded on the magnetic tape is reduced. Also, a step occurs at both ends. In FIG. 67, the same parts as those of the merge type head shown in FIG. 66 are denoted by the same reference numerals.

That is, normally, both ends of the MR element 105 are not flat unless special processing is performed.
A step is formed at both ends of the R element 105. In particular, in the case of the merge type head, when the recording track width S2 of the recording head portion with respect to the magnetic tape is set to be larger than the reproducing track width S1 of the reproducing head portion with respect to the magnetic tape, the center of each track coincides with the position directly above the reproducing head portion. Since the recording head is arranged so as to perform
The magnetic gap of the recording head protrudes from both ends of the element 105. For this reason, in the conventional merge type head, a step occurs in the magnetic gap of the recording head portion, and as a result, the recording pattern S recorded on the magnetic tape is reduced.
2 'also has a step at both ends.

As described above, the step generated in the magnetic gap of the recording head portion is directly reflected on the recording pattern S2 'recorded on the magnetic tape, and both ends of the recording pattern S2' are bent. .

On the other hand, in the merge type head, even if such a recording pattern S2 'having both bent ends is scanned by a reproducing head having a substantially linear reproducing gap, it cannot be read. Also, in this merge type head, if a step occurs in the magnetic gap of the recording head, a useless area is formed on the magnetic tape,
It becomes very difficult to improve the recording density.

Further, the step generated in such a magnetic gap disturbs an adjacent normal recording pattern.
Further, when the linear recording density with respect to the magnetic tape is increased, the recording patterns S2 'before and after indicated by an encircled portion E in FIG. 68 interfere at both ends in the track width direction as shown in FIG. There is a problem that the recording pattern S2 'is disturbed.

In the merge type head, in a system in which backward compatibility is allowed in the same format, the recording track width S2 of the recording head is equal to the reproducing track width S of the reproducing head.
Since it is sufficiently conceivable that the value may be larger than 1, a design that does not cause a step in the magnetic gap of the recording head described above is desired.

In view of the foregoing, the present invention has been proposed in view of such a conventional situation, and it has been made possible to make a magnetic gap of a recording head section disposed on a reproducing head section substantially linear, It is an object of the present invention to provide a composite magnetic head capable of forming a clear recording pattern on a magnetic recording medium, eliminating adverse effects on adjacent tracks, and improving recording density, and a method of manufacturing the same.

[0020]

To achieve this object, a composite magnetic head according to the present invention comprises a magneto-resistance effect type reproducing head for reproducing a signal recorded on a magnetic recording medium, and a magnetic recording medium. A composite magnetic head formed by combining an inductive recording head unit for recording a signal with a first soft magnetic film serving as a lower shield layer formed on a substrate; A first nonmagnetic nonconductive film serving as a lower gap layer formed on the magnetic film, a magnetoresistive element portion formed on the first nonmagnetic nonconductive film, and a magnetoresistive element portion formed on the first nonmagnetic nonconductive film; A second non-magnetic non-conductive film formed on the second non-magnetic non-conductive film, and a second soft magnetic film formed on the second non-magnetic non-conductive film as the upper shield layer and the lower core layer. Magnetic gap formed on the second soft magnetic film And a third non-magnetic non-conductive film, the third soft magnetic film made of a third non-magnetic non-conductive upper core layer formed on the membrane to be. The magnetoresistive element has a step at both ends thereof, and the upper surface of a second non-magnetic non-conductive film formed thereon is flattened.

In this composite magnetic head, the magnetoresistive element has a step at both ends thereof, and the upper surface of the second non-magnetic non-conductive film formed thereon is flattened. Therefore, the second head constituting the recording head portion formed on the second non-magnetic non-conductive film having the upper surface flattened is formed.
The soft magnetic film, the third non-magnetic non-conductive film, and the third soft magnetic film are also flattened. Thereby, in the composite magnetic head, the magnetic gap of the recording head portion can be made substantially linear.

Further, a composite magnetic head according to the present invention for achieving the above object has a magneto-resistance effect type reproducing head for reproducing a signal recorded on a magnetic recording medium and a signal for recording a signal on the magnetic recording medium. A composite magnetic head, which is combined with an inductive type recording head section,
At least a first soft magnetic film serving as a lower shield layer formed on the substrate, a first nonmagnetic non-conductive film serving as a lower gap layer formed on the first soft magnetic film, A magnetoresistive element portion formed on a nonmagnetic nonconductive film of
A second nonmagnetic nonconductive film serving as an upper gap layer formed on the magnetoresistive element, and an upper shield layer and a lower core layer serving as a lower core layer formed on the second nonmagnetic nonconductive film; 2 soft magnetic film, a third non-magnetic non-conductive film serving as a magnetic gap layer formed on the second soft magnetic film, and an upper core formed on the third non-magnetic non-conductive film A third soft magnetic film serving as a layer. The magnetoresistive element has a step at both ends thereof, and the upper surface of a second soft magnetic film formed thereon via a second nonmagnetic nonconductive film is flattened. It is characterized by being.

In this composite magnetic head, the magnetoresistive element has a step at both ends thereof, and a second nonmagnetic and nonconductive film is formed thereon. Since the upper surface of the soft magnetic film is flattened, the third non-magnetic non-conductive film and the third non-magnetic film forming the recording head portion formed on the second soft magnetic film having the flattened upper surface are formed. Is also flattened. Thereby, in the composite magnetic head, the magnetic gap of the recording head portion can be made substantially linear.

Further, a method of manufacturing a composite magnetic head according to the present invention, which achieves this object, comprises a magneto-resistance effect type reproducing head for reproducing a signal recorded on a magnetic recording medium, and a magnetic recording medium. What is claimed is: 1. A method of manufacturing a composite magnetic head in which an inductive recording head unit for recording a signal is combined, wherein at least a first step of forming a first soft magnetic film serving as a lower shield layer on a substrate A second step of forming a first non-magnetic non-conductive film serving as a lower gap layer on the first soft magnetic film; and forming a magnetoresistive element on the first non-magnetic non-conductive film. A third step of forming;
A fourth step of forming a second non-magnetic non-conductive film to be an upper gap layer on the magnetoresistive element, and forming an upper shield layer and a lower core layer on the second non-magnetic non-conductive film A fifth step of forming a second soft magnetic film, a sixth step of forming a third non-magnetic non-conductive film serving as a magnetic gap layer on the second soft magnetic film, and a third step of forming a third non-magnetic film. Forming a third soft magnetic film to be an upper core layer on the magnetic non-conductive film. The magnetoresistive element portion formed in the third step has step portions at both ends thereof. In the fourth step, after forming the second non-magnetic non-conductive film, The step formed on the upper surface of the second non-magnetic non-conductive film according to the step of the magnetoresistive effect element portion is removed, and the upper surface of the second non-magnetic non-conductive film is flattened. And

In this method of manufacturing a composite magnetic head, the magnetoresistive element formed in the third step has steps at both ends, and in the fourth step,
After forming the second non-magnetic non-conductive film, the step formed on the upper surface of the second non-magnetic non-conductive film according to the step of the magnetoresistive element is removed, and the second non-magnetic non-conductive film is removed. Since the upper surface of the non-magnetic non-conductive film is flattened, the second soft magnetic film and the second soft magnetic film constituting the recording head portion formed on the second non-magnetic non-conductive film having this flattened upper surface are formed. The third non-magnetic non-conductive film and the third soft magnetic film can be flattened. Thus, according to the present method, a composite magnetic head in which the magnetic gap of the recording head section is made substantially linear can be easily manufactured.

A method of manufacturing a composite magnetic head according to the present invention, which achieves the above object, comprises a magneto-resistance effect type reproducing head for reproducing signals recorded on a magnetic recording medium, and a magnetic recording medium. What is claimed is: 1. A method of manufacturing a composite magnetic head in which an inductive recording head unit for recording a signal is combined, wherein at least a first step of forming a first soft magnetic film serving as a lower shield layer on a substrate A second step of forming a first non-magnetic non-conductive film serving as a lower gap layer on the first soft magnetic film; and forming a magnetoresistive element on the first non-magnetic non-conductive film. A third step of forming;
A fourth step of forming a second non-magnetic non-conductive film to be an upper gap layer on the magnetoresistive element, and forming an upper shield layer and a lower core layer on the second non-magnetic non-conductive film A fifth step of forming a second soft magnetic film, a sixth step of forming a third non-magnetic non-conductive film serving as a magnetic gap layer on the second soft magnetic film, and a third step of forming a third non-magnetic film. Forming a third soft magnetic film to be an upper core layer on the magnetic non-conductive film. The magnetoresistive element portion formed in the third step has step portions at both ends thereof. In the fifth step, after forming the second soft magnetic film, the magnetoresistive effect element is formed. The step formed on the upper surface of the second soft magnetic film is removed via the second non-magnetic non-conductive film according to the step of the element portion, and the upper surface of the second soft magnetic film is flattened. It is characterized by the following.

In this method for manufacturing a composite magnetic head, the magnetoresistive element formed in the third step has steps at both ends thereof.
After the second soft magnetic film is formed, the step formed on the upper surface of the second soft magnetic film is removed through the second non-magnetic non-conductive film according to the step of the magnetoresistive element. Then, since the upper surface of the second soft magnetic film is flattened, the third non-magnetic non-conductive film constituting the recording head portion formed on the flattened second soft magnetic film, and The third soft magnetic film can be flattened. Thus, according to the present method, a composite magnetic head in which the magnetic gap of the recording head section is made substantially linear can be easily manufactured.

[0028]

Embodiments of the present invention will be described below in detail with reference to the drawings.

In the drawings used in the following description, a characteristic portion may be enlarged for easy understanding of the characteristics, and the dimensional ratio of each component may not be the same as the actual one. Not exclusively.

As an embodiment of the present invention, a magnetic tape device 1 shown in FIG. 1 includes a magnetic head device 3 for recording and reproducing signals on and from a magnetic tape 2 by a so-called helical scan method. While rotating in the direction of arrow A in FIG. 1 with the take-up reel 5, the rotating drum 6 of the magnetic head device 3 is driven to rotate in the direction of arrow B in FIG. The magnetic heads 7 and 8 record or reproduce signals while sliding on the magnetic tape 2.

The magnetic tape device 1 has rolls 9a to 9g for winding the magnetic tape 2 between the supply reel 4 and the take-up reel 5. Of these, the roll 9
The magnetic tape 2 is slid on the rotary drum 6 between the c and the roll 9d, and the magnetic tape 2 hung on the roll 9f is rotationally driven while the magnetic tape 2 is sandwiched by the capstan 10. The paper is sent out by a capstan motor 10a.

The magnetic head device 3, as shown in FIG.
A drive motor 11 for rotating the rotary drum 6 in the direction of arrow B in FIG. 2 is provided. A pair of magnetic heads 7 and 8 are mounted on the outer peripheral surface 6a of the rotating drum 6. The pair of magnetic heads 7 and 8
They are arranged facing each other with a phase difference of 180 °. The pair of magnetic heads 7 and 8 are arranged such that the magnetic gap is oblique to the direction substantially perpendicular to the running direction of the magnetic tape 2 according to the azimuth angle.

The magnetic head device 3 includes a rotating drum 6
2 is provided with a fixed drum 12 forming an outer peripheral surface 12a continuous with the outer peripheral surface 6a of the magnetic drum 2 along a lead guide portion 12b of the fixed drum 12.
The outer circumferential surface 1 of the fixed drum 12 while running obliquely in the direction
2a and the outer peripheral surface 6a of the rotary drum 6 are slid over, for example, approximately 180 °.

The magnetic tape device 1 configured as described above
During recording, one magnetic head 7 forms a recording track with a predetermined track width on the magnetic tape 2 while applying a magnetic field corresponding to a recording signal to the magnetic tape 2, and the other magnetic head 8 A recording track is formed at a predetermined track width while applying a magnetic field corresponding to a recording signal to a position adjacent to the recording track. When the magnetic heads 7 and 8 repeatedly form recording tracks on the magnetic tape 2, signals are continuously recorded on the magnetic tape 2.

On the other hand, in the magnetic tape device 1, during reproduction,
With respect to the magnetic tape 2, one magnetic head 7 detects a signal magnetic field from a recording track, and the other magnetic head 8
A signal magnetic field is detected from a recording track adjacent to the recording head. When the magnetic heads 7 and 8 repeatedly detect the signal magnetic field from the recording track, the signal recorded on the magnetic tape 2 is continuously reproduced.

In the magnetic head device 3, the pair of magnetic heads 7, 8 is a composite magnetic head to which the present invention is applied, as shown in FIGS. This is a so-called merge-type thin-film magnetic head (hereinafter, referred to as a merge-type head) 20, which is a combination of a reproduction head unit for recording a signal on the magnetic tape 2 and a recording head unit for recording a signal on the magnetic tape 2. Note that FIG.
FIG. 4 is a schematic perspective view showing a part of the merge type head 20 in a see-through manner, and FIG. 4 is a schematic end view of the merge type head 20 viewed from the medium sliding surface side.

In the merge type head 20, since the components of the reproducing head portion and the recording head portion are laminated on the substrate by a thin film forming technique such as a plating method or a sputtering method, the track width can be reduced. It has an advantage that it is easy to make fine dimensions such as narrowing the gap and that recording and reproduction with high resolution is possible.

More specifically, the merge type head 20 has a magneto-resistance effect type magnetic head (hereinafter referred to as an MR head) 22 utilizing a magneto-resistance effect as a reproducing head on a first substrate 21. On the MR head 22, an inductive magnetic head (hereinafter, referred to as an inductive head) 23 using electromagnetic induction is stacked as a recording head. Further, a first substrate 21 on which the MR head 22 and the inductive head 23 are sequentially laminated is provided.
Has a structure in which a second substrate 24 is bonded.

In the merge type head 20, the plane shape of the medium sliding surface 20a that slides on the magnetic tape 2 is substantially rectangular, and the medium sliding surface 20a is formed as shown in FIG.
It is a substantially arc-shaped curved surface along the running direction of the magnetic tape 2 indicated by the middle arrow A. In the merge type head 20, the MR head 22 and the inductive head 23
Constitute substantially the same end surface facing outward from the medium sliding surface 20a.

The MR head 22 has a magnetoresistive effect element (hereinafter, referred to as a magnetoresistive element) between a lower shield layer 25 and an upper shield layer 26 via a lower gap layer 27 and an upper gap layer 28.
It is called an MR element. ) This is a so-called shield type MR head in which 29 is sandwiched.

In this MR head 22, the lower shield layer 25 and the upper shield layer 26 have a width sufficient to magnetically shield the MR element 29, and the lower shield layer 25 and the upper shield layer 26 MR element 2
9 functions to prevent the magnetic field outside the reproduction target from the signal magnetic field from the magnetic tape 2 from being drawn into the MR element 29. That is, in the MR head 22, the signal magnetic field that is not to be reproduced with respect to the MR element 29 is guided to the lower shield layer 25 and the upper shield layer 26, and only the signal magnetic field to be reproduced is guided to the MR element 29. Thereby, in the MR head 22, the frequency characteristics and the reading resolution of the MR element 29 are improved.

Lower gap layer 27 and upper gap layer 2
8 magnetically isolates the lower shield layer 25, the upper shield layer 26, and the MR element 29 from each other, and the gap between the lower shield layer 25, the upper shield layer 26, and the MR element 29 is a so-called gap. It is long.

The MR element 29 utilizes the so-called magnetoresistive effect in which the electric resistance changes according to the change in the external magnetic field. By detecting a change, a signal recorded on the magnetic tape 2 is read.

In order to stabilize the operation of the MR element 29, M
A pair of permanent magnet films 30a and 30b for applying a bias magnetic field to the R element 29 are provided, and the width of a portion sandwiched between the pair of permanent magnet films 30a and 30b is
A reproduction track width Tw ₁ of the MR head 22.

On the MR element 29, a pair of conductors 31 for supplying a sense current to the MR element 29 is provided.
a and 31b are provided such that one ends thereof are connected to a pair of permanent magnet films 30a and 30b, respectively, and the other ends of the pair of conductors 31a and 31b are connected to an external circuit. External connection terminals 32a and 32b are provided. Note that a resistance lowering film (not shown) for lowering the resistance value of the MR element 29 is provided on the pair of permanent magnet films 30a and 30b.

Although the MR element 29 is shown in FIG. 3 and FIG. 4 in an enlarged manner for easy understanding of the characteristics, the MR element 29 is actually formed on the first substrate. It is very fine as compared with 21 and the second substrate 24. The length of the first substrate 21 in the direction in which the magnetic tape 2 runs is, for example, about 0.8 mm.
The length in the traveling direction of the magnetic tape 2 is, for example, 5 μm
Degree. Therefore, in the merge type head 20, the medium sliding surface 20a is almost only the upper end surfaces of the first substrate 21 and the second substrate 24.

On the other hand, the inductive head 23 has a structure in which a lower core layer 26 and an upper core layer 33 are stacked via a magnetic gap layer 34. Note that the lower core layer 26 and the upper shield layer 26 are the same member, and constitute a pair of magnetic shields together with the lower shield layer 25 in the read head section.
Together with the upper core layer 33, a pair of magnetic cores is formed.

Further, a magnetic gap is formed by arranging the lower core layer 26 and the upper core layer 33 at predetermined intervals on the medium sliding surface 20a. Furthermore, the upper core layer 33 is formed to have a predetermined width on the medium sliding surface 20a side, and this width is the recording track width Tw ₂ of the inductive head 23.

The inductive head 23 is provided between the lower core layer 26 and the upper core layer 33 with a thin-film coil (not shown) wound around a back gap. A pair of lead wires 35a and 35b for supplying a current for generating a magnetic field to the thin-film coil are provided at the inner peripheral end and the outer peripheral end of the thin-film coil.
Are provided, and these lead wires 35a, 35b
The external connection terminal 3 connected to the external circuit
6a and 36b are provided.

On the upper core layer 33, the external connection terminals 32 a and 32 of the MR head 22 are provided from the first substrate 21.
b and the external connection terminal 36 of the inductive head 23
The protective layer 37 is formed except for the portions where a and 36b are exposed to the outside, and the conductor portions 31a and 31b, the thin-film coils, and the lead wires 35a and 35b are protected.

The merge type head 2 configured as described above
0 denotes the rotary drum 6 as the magnetic heads 7 and 8 described above.
The magnetic gap is arranged on the outer peripheral surface 6a so as to be oblique to the direction substantially perpendicular to the running direction of the magnetic tape 2 according to the azimuth angle θ. And this merge type head 2
0 indicates that the inductive head 23 serving as a recording head unit records a signal on the magnetic tape 2 while sliding obliquely with respect to the magnetic tape 2, while the reproducing head unit M
The R head 22 reproduces the signal recorded on the magnetic tape 2.

Specifically, when recording a signal on the magnetic tape 2 using the inductive head 23, a current corresponding to the signal to be recorded is supplied to the thin film coil. At this time, the inductive head 23 includes the thin film coil 3
Due to the generated magnetic field, a magnetic flux flows through the magnetic core, and a leakage magnetic field is generated from the magnetic gap. Then, by applying this leakage magnetic field to the magnetic tape 2, a recording track corresponding to a signal to be recorded on the magnetic tape 2 is formed.

On the other hand, when reproducing signals from the magnetic tape 2 using the MR head 22, a predetermined voltage is applied to the MR element 29. At this time, the conductance of the sense current flowing through the MR element 29 changes according to the signal magnetic field recorded on the recording track of the magnetic tape 2.
Therefore, in the MR head 22, the voltage value of the sense current flowing through the MR element 29 changes, and the signal recorded on the recording track is detected by detecting the change in the voltage value of the MR element 29. Will be.

By the way, such a merge type head 20
Then, the MR element 29, a pair of permanent magnet films 30a and 30b and a low resistance film provided at both ends of the MR element 29, and a pair of conductor portions 31a and 31b provided in a form connected to these. Constitute a magnetoresistive element portion.

At both ends of the magnetoresistive element portion, a thin film for an MR element, which will be described later, serving as the MR element 29, and a pair of permanent magnet films 30a, 30b provided at both ends of the MR element 29, A step portion is formed due to a difference in film thickness between the resistive film and the pair of conductor portions 31a and 31b provided so as to be connected to the resistive film, and the recording head is formed on such a step portion. Lower Core Layer 26, Magnetic Gap Layer 34, and Upper Core Layer 35
Are sequentially laminated.

For this reason, in the conventional merge type head, a step corresponding to the step of the magnetoresistive element is finally formed in the magnetic gap of the recording head, and as a result, the recording pattern recorded on the magnetic tape is changed. Also, there is a problem that a step is formed at both ends.

Therefore, the merge type head 20 is characterized in that the upper surface 28a of the upper gap layer 28 formed on such a step is flattened. That is, in the merge type head 20, the upper surface 28a of the upper gap layer 28 is flattened, so that the lower core layer 26, the magnetic gap layer 34, and the upper core layer 35 constituting the recording head portion formed thereon are formed. Is also flattened.

Thus, in the merge type head 20, the magnetic gap of the recording head portion can be made substantially linear, and the magnetic tape 2 has a clear recording pattern, that is, a substantially straight line over the entire width of the recording track. A shaped recording pattern can be formed.

Therefore, in the merge type head 20, it is possible to suppress the adverse effect on the adjacent track, and to improve the reliability of the recorded information and the recording density. Further, since the effective when the recording track width Tw ₂ of the recording head portion is larger than the read track width Tw ₁ of the reproducing head portion,
It is possible to support a system that allows backward compatibility in the same format.

Here, as shown in FIG. 5, the upper core layer 1
FIG. 6 shows the result of measurement of the relationship between the size d of the step formed at No. 06 and the output from the recording pattern S2 ′ recorded on the magnetic tape.

Here, the recording pattern S2 'is recorded on the magnetic tape by using the recording heads having different step size d, and then the reproduction is performed substantially equal to the recording track width S2 of the recording head. The magnitude of the output when the signal was reproduced from the magnetic tape by the reproducing head portion (MR element 111) having a track width was measured. However, here, since the measurement was performed with the recording wavelength set to 0.3 μm,
The measurement results may vary slightly depending on the system used. Also, in FIG. 5, the same parts as those of the merge type head shown in FIG. 67 are denoted by the same reference numerals.

From the measurement results shown in FIG. 6, the upper core layer 10
6, the output of the signal reproduced from the magnetic tape, that is, the output from the recording pattern S2 'recorded on the magnetic tape, decreases as the size d of the step formed in the magnetic tape 6 increases. When the size d of the step is 50 nm or less, it is possible to obtain an output substantially equivalent to a state where no step is formed. On the other hand, when the size d of the step portion is 100 nm or more, the portion of the recording pattern S2 'recorded on the magnetic tape where the step is formed is not read, and the linear portion where the step is not generated, that is, the recording portion is not recorded. Only an output corresponding to the reproduction track width S1 of the original MR element 105 smaller than the track width S2 can be obtained.

Such an output drop curve is similar to the azimuth loss calculation formula sinX / X. Further, depending on the frequency of the system used, for example, in a tape streamer to which the present invention is applied, the recording wavelength is rarely set to 0.3 μm or more, and even if the recording wavelength is set to 0.3 μm or more, the restriction tends to be loosened. is there.

As described above, the above-mentioned upper core layer 10
The allowable range of the size d of the step portion formed in 6 is as follows.
It is desirable that the thickness be 50 nm or less.

Next, a method for manufacturing the merge type head 20 described above will be described in detail.

The drawings used in the following description are similar to those shown in FIGS.
The characteristic portion may be shown in an enlarged manner, and the ratio of the dimensions of each member is not always the same as the actual one. Further, in the following description, specific examples of members constituting the merge type head 20 and their materials, sizes, film thicknesses, and the like will be described, but the present invention is not limited to the following examples. For example, in the following description, it has a structure similar to that practically used in a hard disk drive or the like.
Although an example using a so-called shield type SAL (Soft Adjacent Layer) bias type MR element will be described, the bias method is not limited to this example. Further, an MR element utilizing a giant magnetoresistance effect (GMR) such as a spin valve film, which can obtain a larger output, may be used.

When manufacturing the merge type head 20,
First, as shown in FIGS. 7 and 8, for example, about 4 inches
A disk-shaped substrate 40 is prepared, and the surface of the substrate 40 is
And perform mirror polishing. This substrate 40 is finally
The first substrate 21 of the storage type head 20,
As the material, a high-hardness soft magnetic material is used. Specifically
Is, for example, Al_TwoO_Three-TiC (Altic), α-Fe
_TwoO_Three(Α-hematite), Ni-Zn ferrite and the like are preferable.
Suitable. FIG. 8 shows a line segment X shown in FIG. ₁-X₁’
FIG.

Next, as shown in FIGS. 9 and 10, on the substrate 40, the first soft magnetic film 4 serving as the lower shield layer 25 is formed.
1 is formed by a lift-off method. FIG. 10 is a schematic sectional view taken along line X ₂ -X ₂ ′ shown in FIG.

Specifically, first, as shown in FIG.
A first resist pattern having an opening a corresponding to the lower shield layer 25 is formed on the main surface of the substrate. At this time, it is preferable that the first resist pattern 42 has an inverse tapered type in which the lower layer end is recessed from the upper layer end in the opening 42a.

When the opening 42a of the first resist pattern 42 is of a reverse taper type, a resist material for reverse taper, for example, ZPN-1100 (manufactured by Zeon Corporation) or AZ5214E (manufactured by Client Corporation) After performing pre-baking and exposure in the same manner as a normal resist film using, for example, heating is performed at a temperature of 110 ° C. to perform reverse baking, and excessive exposure (reverse exposure) is performed. Further, when forming the first resist pattern 42 of the reverse taper type, a method recommended for each resist material for reverse taper described above may be used.

When the first soft magnetic film 41 is formed, a two-layer structure as shown in FIG. 12 is used instead of the inversely tapered first resist pattern 42 as shown in FIG. The second resist pattern 43 may be formed on the substrate 40.

The second resist pattern 43 has the first resist pattern 43
The resist film 43a and the second resist film 43b are sequentially laminated to have an opening 43c corresponding to the lower shield layer 25. In this opening 43c,
The first resist film 43a has a shape recessed from the second resist film 43b formed thereon.

When forming the second resist pattern 43 having the two-layer structure, the first resist film 43a
For example, ARC (manufactured by Brewer Science), which is usually used as a material for an anti-reflection film, is used.
Is formed over the entire surface of the substrate 40. On the other hand, as the second resist film 43b, for example, AZ6108 (manufactured by Client Corporation), which is usually used as a resist material, is used.
Is formed on the first resist film 43a so as to have the opening 43c corresponding to the lower shield layer 25 described above. Then, pre-bake like a normal resist film,
After the exposure, development is performed for a longer time than usual. As a result, the second resist pattern 43
The first resist film 43a exposed from the opening 43c of the resist film 43b is removed, and the opening 4c is removed.
In 3c, the first resist film 43a has a shape recessed from the second resist film 43b formed thereon.

Next, using the first resist pattern 42 or the second resist pattern 43, a first soft magnetic film 41 is formed by sputtering or the like. The material of the first soft magnetic film 41 is, for example, FeAlS
It is not particularly limited as long as it shows i (sendust) and other excellent soft magnetism and is excellent in abrasion corrosion. Further, the first soft magnetic film 41 is formed on the MR head 22.
In order to function as a magnetic shield, it must support all wavelengths used in the system, and usually has the longest wavelength of 2 mm.
The film thickness needs to be twice or more. Here, Sendust is used as the first soft magnetic film 41, the thickness of the first soft magnetic film 41 shown in FIG. 9 is 2.5 μm, and the size t ₁ × t ₂ is 1
It was set to 00 μm × 80 μm.

Next, the first resist pattern 42 or the second resist pattern 43 is removed together with the first soft magnetic film 41 deposited on the first and second resist patterns 42, 43. Acetone or NMP may be used to remove the first and second resist patterns 42 and 43.
A solvent such as (N-methylpyrrolidone) is used.

9 and 1 on the substrate 40.
Lower shield layer 25 having a predetermined shape as shown in FIG.
A first soft magnetic film 41 is formed.

As described above, the first resist pattern 42
Alternatively, the second resist pattern 43 is removed together with the first soft magnetic film 41 deposited on the second resist pattern 43, and only the portions not covered by the first and second resist patterns 42 and 43 are covered with the first soft pattern. The method of forming the magnetic film 41 is described as
Although generally referred to as a lift-off method, in order to clearly separate the end of the first soft magnetic film 41 formed by the lift-off method, an inversely tapered first resist pattern 42 as shown in FIG. In addition, a second resist pattern 43 having a two-layer structure as shown in FIG. 12 is required. That is, by using a resist pattern having such a shape, a material to be formed thereon is divided at an edge portion of the resist pattern, and a solvent for removing the resist pattern from the divided portion enters. Thus, clear patterning of the film forming material becomes possible.

Further, by stripping the first resist pattern 42 or the second resist pattern 43 while oscillating the substrate 40 in the ultrasonic cleaning tank, the stripping time can be shortened.

Next, as shown in FIG. 13 and FIG.
Over the entire surface of the substrate 40 on which the soft magnetic film 41 is formed.
And, for example, Al_TwoO_ThreeNon-magnetic non-conductive film made of
After the film 44 is formed, the first
Polishing is performed until the soft magnetic film 41 is exposed. This allows the
Between the plate 40 and the first soft magnetic film 41, a first non-magnetic non-conductive
A first soft magnetic film on the substrate 40 in which the conductive film 44 is embedded;
No level difference from the portion where 41 is not formed and flattened
Is done. FIG. 14 shows a line segment X shown in FIG. _Three−
X_Three′ Is a schematic sectional view.

The thickness t of the first non-magnetic non-conductive film 44
_In the case of No. ₃ , since the first soft magnetic film 41 needs to be completely buried, the thickness of the first soft magnetic film 41 must be equal to or greater than the thickness of the first soft magnetic film 41. Here, the film is formed with a thickness of, for example, about 5 μm. The first non-magnetic non-conductive film 44 may be made of SiO ₂ or the like instead of Al ₂ O ₃ , and is formed by an arbitrary method such as a sputtering method or a vapor deposition.

The surface on which the first non-magnetic non-conductive film 44 is formed may be roughly polished with diamond abrasive grains, and then the surface may be conditioned by CMP (Chemical & Mechanical Polishing). May be polished by CMP. However, the first soft magnetic film 4 is formed over the entire surface of the substrate 40.
It is necessary to carry out until the surface of No. 1 is exposed.

Here, a heat treatment is performed on the first soft magnetic film 41. The heat treatment for the first soft magnetic film 41
It is necessary to perform a heat treatment according to the material to be the first soft magnetic film 41. Here, since sendust is used for the first soft magnetic film 41, a heat treatment temperature of about 550 ° C. is required. For example, after heating to 550 ° C. in one hour, the heat treatment is performed for one hour at the same temperature. And then allowed to cool naturally. When a material other than Sendust is used for the first soft magnetic film 41, the material is subjected to an optimal heat treatment.

Next, as shown in FIGS. 15 and 16, a second non-magnetic non-conductive film 45 serving as the lower gap layer 27 is formed on the planarized substrate 40 by sputtering or the like.
Is formed. FIG. 16 shows a line segment X ₄ shown in FIG.
It is a schematic sectional view taken along -X ₄ '.

As the material of the second non-magnetic non-conductive film 45, Al ₂ O ₃ is preferable from the viewpoint of insulation properties, wear resistance and the like. Note that the thickness t ₄ of the second non-magnetic non-conductive film 45 may be set to an appropriate value according to the frequency of a signal recorded on the magnetic tape 2. Here, the thickness t ₄ of the second non-magnetic non-conductive film 45 is, for example, about 100 nm.

Next, as shown in FIGS. 17 and 18, on the second non-magnetic non-conductive film 45, for example, a thin film constituting the SAL bias type MR element 29 (hereinafter, referred to as an MR element thin film). ) 46 is formed by sputtering or the like. Incidentally, FIG. 19 is a schematic sectional view taken along the line X ₅ -X ₅ 'shown in Figure 18.

The MR element thin film 46 includes, for example, a Ta layer having a thickness of about 5 nm as a lower layer, a NiFeNb layer having a thickness of about 24 nm as a SAL bias layer, and a Ta layer having a thickness of about 5 nm as an intermediate insulating layer. About 20n film thickness as MR layer
An NiFe layer having a thickness of m and a Ta layer having a thickness of about 1 nm as an upper layer are formed by sequentially laminating in this order by sputtering or the like. In the MR element thin film 46, the NiFe layer is a soft magnetic film having a magnetoresistance effect, and serves as a magnetically sensitive portion of the MR element 29. In the MR element thin film 46, the NiFeNb layer is a so-called SAL film that applies a bias magnetic field to the NiFe layer.

The material of each layer constituting the MR element thin film 46 and the thickness thereof are not limited to the above examples, and an appropriate material may be selected according to the purpose of use of the MR head 22 and the like. What is necessary is just to set it to an appropriate film thickness.

Here, the film thickness t ₄ of the second non-magnetic non-conductive film 45 shown in FIG. 16 is obtained when the distance between shields (so-called reproduction gap) finally required for the system is G.
t ₄ = G / 2− (Ta layer thickness 5 nm + NiFeNb layer thickness 24 nm + Ta layer thickness 5 nm + NiFe layer thickness 20 nm / 2). As a result, the MR element 29 is connected to the lower and upper shield layers 2.
It will be accurately arranged at the center position between 5 and 26.

Next, as shown in FIG. 19 to FIG.
In order to stabilize the operation of the R element 29, a pair of rectangular permanent magnet films 30a and 30b are formed on the MR element 29 by using a photolithography technique.
Embed in 6. FIG. 20 is an enlarged schematic plan view showing the encircled portion C shown in FIG. 19, and FIG.
Is a schematic sectional view taken along the line X ₆ -X ₆ 'shown in the 0.

The two permanent magnet films 30a and 30b are
For example, the length t ₅ in the long side direction is about 50 μm, and the length t ₆ in the short side direction is about 10 μm, so that the two permanent magnet films 30a,
Interval t ₇ of 30b is formed to be about 5 [mu] m.
Then, these two permanent magnet film 30a, the interval t ₇ of 30b is finally a reproduction track width Tw ₁ of the MR element 29. That is, in the MR head 22, the reproduction track width of the MR element 29 is about 5 μm. The reproduction track width Tw ₁ of the MR element 29 is not limited to the above example, it may be set to an appropriate value depending on the intended use of the MR head 22.

The permanent magnet films 30a, 30b
Need to be disposed on the first soft magnetic film 41 to be the lower shield layer 25. Here, these permanent magnet films 3
The center positions of the first and second soft magnetic films 41a and 30b coincide with the center position of the first soft magnetic film 41 in the track width direction, and are arranged at a position about 30 μm vertically apart from the upper end of the first soft magnetic film 41. ing. The arrangement of the permanent magnet films 30a, 30b is not limited to the above example, as long as the portions finally left as the lower and upper shield layers 25, 26 are at least about 5 times the width of the MR element 29 in the depth direction. It is not something to be done.

Further, on the permanent magnet films 30a and 30b,
In order to reduce the resistance value of the MR element 29 and the MR element 29, a low-resistance film having a lower resistance value is formed.

When embedding the permanent magnet films 30a and 30b and the low-resistance film in the MR element thin film 46, first, the M
On the R element thin film 46, two rectangular openings 47a are formed in portions to be MR elements 29 as shown in FIGS.
In addition, in the opening 47a, an inverse tapered third resist pattern 47 in which the lower layer end is recessed from the upper layer end is formed. FIG. 22 is an enlarged schematic plan view showing the encircled portion C shown in FIG. 19, and FIG. 23 is a schematic sectional view taken along line X ₇ -X ₇ ′ shown in FIG.

Alternatively, instead of such a reversely tapered third resist pattern 47, a first resist film 48a and a second resist film 48b as shown in FIGS. 24 and 25 are sequentially laminated. In the portion to be the MR element 29, there are two rectangular openings 48c, and in the openings 48c, the first resist film 48a is recessed from the second resist film 48b formed thereon. A fourth resist pattern 48 having a layer structure may be formed. FIG. 24 is a diagram illustrating the encircled portion C shown in FIG.
25 is an enlarged schematic plan view, and FIG. 25 is a schematic sectional view taken along line X ₈ -X ₈ ′ shown in FIG.

The third and fourth resist patterns 47 and 48 are formed in the same manner as the above-described inverted tapered first resist pattern 42 and the second resist pattern 43 having a two-layer structure. Therefore, the description of the forming method and the like will be omitted.

Next, by using the third and fourth resist patterns 47 and 48 as a mask, etching is performed to remove the MR element thin film 46 exposed from the openings 47a and 48c. Note that the etching here may be a dry method or a wet method, but ion etching is preferable in consideration of ease of processing and the like.

Next, on the MR element thin film 46 on which the third and fourth resist patterns 47 and 48 are formed,
The permanent magnet films 30a and 30b are formed by sputtering or the like. The material of the permanent magnet films 30a and 30b is preferably a material having a coercive force of 1000 [Oe] or more, such as CoNiPt or CoCrPt. The thicknesses of the permanent magnet films 30a and 30b were substantially the same as those of the MR element thin film 46.

Next, a low-resistance film is formed on the permanent magnet films 30a and 30b by sputtering or the like. In addition,
As a material of the low resistance film, for example, Cr, Ta, or the like is preferable. The thickness of the low resistance film was set to about 60 nm.

Next, the third and fourth resist patterns 4
7 and 48 are used as the third and fourth resist patterns 4.
The permanent magnet films 30a, 30b and the low resistance film formed on the layers 7, 48 are removed. Thereby, the permanent magnet film 30 having a predetermined shape as shown in FIGS.
a, 30b and the low-resistance film are embedded in the MR element thin film 46.

Next, using photolithography technology,
A mask having an opening is formed in a portion serving as the MR element 29 and a portion serving as the conductor portions 31a and 31b for supplying a sense current to the MR element 29. Then, etching is performed to remove the MR element thin film 46 exposed in the opening. Note that the etching here may be a dry method or a wet method, but ion etching is preferable in consideration of ease of processing and the like. Then, the photoresist used as the mask is removed. Thus, the MR element thin film 46 as shown in FIGS.
Of these, the portion 46a that will eventually become the MR element 29 and the portion 46b that will become the conductor portions 31a and 31b are left. FIG. 26 is an enlarged schematic plan view showing the encircled portion C shown in FIG. 19, and FIG. 27 is a schematic sectional view taken along line X ₉ -X ₉ ′ shown in FIG.

Here, the width of the portion 46a to be the MR element 29, that is, the width t _{8 of the} MR element 29 and the conductor portions 31a, 3
Portion 46b length t ₉ and the width t ₁₀ of the 1b, further conductor section 31a, the interval t ₁₁ parts 46b serving as 31b is, M
What is necessary is just to set it to an optimal value according to the environment used by the R head 22. Here, the width t ₈ of the MR element 29 is set to about 7 μm. Width t ₈ of the MR element 29, ultimately from the end of the medium sliding surface 20a side to the other side length, i.e. corresponding to the depth length. Therefore, the MR element 29
Has a depth of about 7 μm. Also, the conductors 31a,
The length t ₉ of each of the portions 46b to be 31b is about 1.
And 5 mm, the respective widths t ₁₀ to about 80 [mu] m, and the distance between each of t ₁₁ to about 40 [mu] m.

Next, as shown in FIGS. 28 and 29, the conductor portions 31a and 31b are formed by photolithography.
To form FIG. 28 is an enlarged schematic plan view showing the encircling portion C shown in FIG. 19, and FIG.
Is a schematic sectional view taken along line X ₁₀ -X ₁₀ 'shown in.

Specifically, first, a mask having an opening in a portion 46b to be the conductor portions 31a and 31b is formed by photoresist. Next, perform etching,
Portions exposed in the openings, that is, conductor portions 31a, 3
The thin film 4 for the MR element left in the portion 46b to be 1b
6 is removed. Next, a conductive film is formed thereon while the photoresist mask is left as it is. Here, the conductive film is formed, for example, by sequentially laminating a 10-nm-thick Ti film, a 90-nm-thick Cu film, and a 10-nm-thick Ti film in this order by sputtering or the like. Thereafter, the photoresist serving as the mask is removed together with the conductive film formed on the photoresist, thereby forming conductor portions 31a and 31b having a predetermined shape.

Thus, the portion 46a of the thin film 46 for the MR element to be the MR element 29, the pair of permanent magnet films 30a and 30b and the low resistance film provided at both ends thereof are connected to each other. A pair of conductor portions 31 provided
a, 31b are formed.

Next, as shown in FIGS. 30 to 32, a third non-magnetic non-conductive film 49 to be the upper gap layer 28 is formed on the magnetoresistive element by sputtering or the like. Note that FIG. 30 shows the encircled portion C shown in FIG.
31 is an enlarged schematic plan view, and FIG. 31 is a schematic sectional view taken along line X ₁₁ -X ₁₁ ′ shown in FIG. FIG.
FIG. 2 is a schematic sectional view taken along line X ₁₂ -X ₁₂ ′ shown in FIG.

The material of the third non-magnetic non-conductive film 49 is
Therefore, from the viewpoint of insulation properties and wear resistance,_TwoO_ThreeIs good
Suitable. The third non-magnetic non-conductive film 49
Thickness t ₁₂Corresponds to the frequency of the signal recorded on the magnetic recording medium, etc.
An appropriate value may be set accordingly. Also, this third non-
Thickness t of magnetic non-conductive film 49₁₂Will eventually be added to the system
The required distance between shields (so-called reproduction gap) is G
When t₁₂= G / 2- (film thickness of NiFe layer 20 nm
/ 2 + Ta layer thickness 1 nm)
Is done. As a result, the MR element 29 has a lower layer and an upper layer.
Accurately positioned at the center between the shield layers 25 and 26
It will be.

Here, the upper surface 49a of the third non-magnetic non-conductive film 49 is flattened.

That is, at both ends of the above-described magnetoresistive effect element portion, a portion 46a to be the MR element 29 of the MR element thin film 46, and a pair of permanent magnet films 30a and 30b provided at both ends thereof. Resistive films, and a pair of conductors 31a and 31b provided in a form connected to them
Is formed due to the difference in film thickness between the steps. Since the third non-magnetic non-conductive film 49 is formed on the magnetoresistive element having such a step, the upper surface 49a of the third non-magnetic non-conductive film 49 has A step corresponding to the step of the effect element section is generated.
Therefore, the upper surface 49a of the third non-magnetic non-conductive film 49 having such a step is flattened.

By the way, the thickness t ₁₂ of the third non-magnetic non-conductive film 49 described above is determined by the thickness of the etching means used in addition to the final thickness of the upper gap layer 28 obtained by calculation at the time of film formation. Although it depends on the performance, it is necessary to set the thickness in consideration of an etching amount for flattening the upper surface 49a of the third nonmagnetic nonconductive film 49. here,
An etching amount of 20 nm was added so that the final thickness of the upper gap layer 28 became 100 nm, and the overall thickness was set to 120 nm.

However, since the thickness t ₁₂ of the third non-magnetic non-conductive film 49 finally becomes the gap length of the reproducing head portion, it is difficult to finish with a polishing machine with low accuracy. It must be avoided because it causes a non-uniform distribution of the layer 28.

Therefore, the third non-magnetic non-conductive film 49
When the upper surface 49a is flattened, first, as shown in FIG. 33, the undercut shape in which the lower layer side is located directly above the MR element 29 and the lower layer side bites inwardly from the upper layer side is formed.
Is formed. The fifth resist pattern 50 is formed in the same manner as the above-described inverted tapered first resist pattern 42 and the second resist pattern 43 having a two-layer structure. A resist film 50a is formed on the second
An approximately T-shaped fifth resist pattern 50 having a two-layer structure receded from the resist film 50b of FIG.

Next, using the fifth resist pattern 50 as a mask, a step formed on the upper surface 49a of the third non-magnetic non-conductive film 49 is removed by ion etching or the like.

What is important here is not only the etching rate but also the inclination angle of the substrate with respect to the incident direction of the ion particles (etching particles) (hereinafter referred to as the etching angle). That is, at the end of the fifth resist pattern 50, the portion formed in the undercut shape becomes negative due to the etching angle, and the progress of the etching becomes slow. By utilizing this, it is necessary to select an etching angle at which the step portion of the third nonmagnetic nonconductive film 49 is just etched.

In addition, the above-described permanent magnet films 30a, 30b
In the case where the same etching apparatus as that used when forming the above is used, the etching angle is set to the permanent magnet films 30a and 30b.
Although the etching angle is substantially the same as that at the time of formation, even when a different apparatus is used, only the step portion of the third non-magnetic non-conductive film 49 can be etched by adjusting the etching angle. Can be.

Next, after removing the fifth resist pattern 50 from the third non-magnetic non-conductive film 49, the surface of the third non-magnetic non-conductive film 49 is further subjected to chemical polishing ( Finish the mirror surface by buffing. Thereby, as shown in FIG. 34, the third non-magnetic non-conductive film 49 is formed.
Can be flattened.

Next, as shown in FIGS. 35 and 36, the third non-magnetic non-conductive film 4 having its upper surface 49a flattened is formed.
9, a second soft magnetic film 51 to be the upper shield layer 26 and the lower core layer 26 is formed by a lift-off method. FIG. 35 is an enlarged schematic plan view showing the encircled portion C shown in FIG. 19, and FIG. 36 is a line segment X shown in FIG.
₁₃ is a schematic sectional view taken along -X ₁₃ '.

More specifically, first, as shown in FIGS. 37 and 38, a sixth resist pattern having an opening 52a corresponding to the upper shield layer 26 on the third nonmagnetic nonconductive film 49 is formed. 52 is formed. FIG. 38 is the same as FIG.
It is a schematic plan view which expands and shows the surrounding part C shown inside,
FIG. 39 is a schematic sectional view taken along line X ₁₄ -X ₁₄ ′ shown in FIG.

At this time, the sixth resist pattern 52
The opening 52a preferably has a reverse tapered shape in which the lower layer end is recessed from the upper layer end.

When the opening 52a of the sixth resist pattern 52 is of a reverse taper type, a resist material for reverse taper, for example, ZPN-1100 (manufactured by Zeon Corporation) or AZ5214E (manufactured by Client Company) After performing pre-baking and exposure in the same manner as a normal resist film using, for example, heating is performed at a temperature of 110 ° C. to perform reverse baking, and excessive exposure (reverse exposure) is performed. When forming the reverse tapered sixth resist pattern 52, a method recommended for each of the above-described reverse taper resist materials may be used.

When the second soft magnetic film 51 is formed, a reverse tapered sixth soft magnetic film 51 as shown in FIGS.
39 and 40 instead of the resist pattern 52 of FIG.
A seventh resist pattern 53 having a two-layer structure as shown in FIG. 7 may be formed on the third non-magnetic non-conductive film 49. Note that FIG. 39 is a schematic plan view showing the encircled portion C shown in FIG. 19 in an enlarged manner, and FIG. 40 is a schematic sectional view taken along line X ₁₅ -X ₁₅ ′ shown in FIG.

The seventh resist pattern 53 has the first
The resist film 53a and the second resist film 53b are sequentially laminated to have an opening 53c corresponding to the upper shield layer 26. In this opening 53c,
The first resist film 53a has a shape recessed from the second resist film 53b formed thereon.

When the seventh resist pattern 53 having this two-layer structure is formed, the first resist film 53a
For example, ARC (manufactured by Brewer Science), which is usually used as a material for an anti-reflection film, is used.
Is formed over the entire surface of the third non-magnetic non-conductive film 49. On the other hand, the second resist film 53b
For example, AZ6108 (manufactured by Client), which is usually used as a resist material, is used.
Is formed on the first resist film 53a so as to have the opening 53c corresponding to the upper shield layer 26 described above. Then, after performing prebaking and exposure in the same manner as a normal resist film, development is performed for a longer time than usual. Thereby, the seventh resist pattern 53 is formed such that the first resist film 53a exposed from the opening 53c of the second resist film 53b is removed, and the first resist film 53 is formed in the opening 53c.
a has a shape recessed from the second resist film 53b formed thereon.

Next, using such a sixth resist pattern 52 or a seventh resist pattern 53, a second soft magnetic film 51 to be the upper shield layer 26 is formed by sputtering or the like. As the material of the second soft magnetic film 51, since the MR element 29 has already been formed, the heat treatment at a high temperature performed on the first soft magnetic film 41 cannot be performed. There are naturally restrictions. For this reason, as the second soft magnetic film 51, a material exhibiting soft magnetism by performing a heat treatment at 350 ° C. or less, which is the heat resistant temperature of the MR element 29, or a material exhibiting soft magnetism without performing the heat treatment is used. There is a need.

Here, as the material of the second soft magnetic film 51, a Co-based amorphous material was used. Specifically, C
As an o-type amorphous material, for example, CoZrNbT
When a is used, when the composition ratio of Co, Zr, Nb, and Ta is a, b, c, and d (where a, b, c, and d are each atomic%), 68 ≦ a ≦ 90. , 0 ≦ b ≦ 1
0, 0 ≦ c ≦ 20, 0 ≦ d ≦ 10 (a + b + c + d = 1
(00 atomic%), excellent soft magnetic properties can be obtained. In particular, 79 ≦ a ≦ 83, 2 ≦ b ≦ 6, and 10 ≦ c ≦
14, excellent heat resistance and wear resistance can be obtained in the range of 1 ≦ d ≦ 5 (a + b + c + d = 100 atomic%).

As a result, the occurrence of uneven wear on the medium sliding surface 20a of the merge type head 20 can be reduced, the spacing loss can be reduced, a high reproduction output can be maintained, and the life of the head can be extended. it can. As a combination other than these compositions, Mo, Cr, Ti, Hf, Pd, W, V, etc., or a combination thereof can be considered instead of Ta.

Further, the second soft magnetic film 51 may be a laminated film in which soft magnetic films and non-magnetic films are alternately formed in order to enhance soft magnetic characteristics. In this case, magnetostatic coupling occurs between the soft magnetic films, and no domain wall is generated. For this reason, it is possible to suppress delay in response to a high frequency due to domain wall movement, generation of noise and the like. Here, the thickness of the soft magnetic film is set to 0.28 μm, the thickness of the nonmagnetic film is set to 5 μm, and the soft magnetic films are alternately formed until the soft magnetic film has 10 layers. . In addition, although SiO ₂ was used for the non-magnetic film, it is not limited to such a material, and any material may be used as long as it can electrically and magnetically insulate. In order to stabilize the characteristics of the amorphous magnetic film, the second soft magnetic film 51 is coated with a few nm
It is preferable to deposit them to a certain degree.

Next, the sixth resist pattern 52 or the seventh resist pattern 53 is removed together with the second soft magnetic film 51 deposited on the sixth and seventh resist patterns 52, 53. The stripping of the sixth and seventh resist patterns 52 and 53 may be performed using acetone or NMP.
A solvent such as (N-methylpyrrolidone) is used.

Thus, the third non-magnetic non-conductive film 49
A second soft magnetic film 51 serving as the upper shield layer 26 and the lower core layer 26 having a predetermined shape as shown in FIGS. 35 and 36 is formed thereon.

As described above, the sixth resist pattern 52
Alternatively, the seventh resist pattern 53 is removed together with the second soft magnetic film 51 deposited thereon, and only the portions not covered with the sixth and seventh resist patterns 52, 53 are covered with the second soft magnetic film 51. The method of forming the film 51 is referred to as the lift-off method as described above. In order for the end of the second soft magnetic film 51 formed by the lift-off method to be clearly separated, the method shown in FIG. An inverted tapered sixth resist pattern 52 as shown in FIG.
A seventh resist pattern 53 having a layer structure is required. That is, by using a resist pattern having such a shape, a material to be formed thereon is divided at an edge portion of the resist pattern, and a solvent for removing the resist pattern from the divided portion enters. Thus, clear patterning of the film forming material becomes possible.

Further, the peeling time can be reduced by peeling off the sixth resist pattern 52 or the seventh resist pattern 53 while oscillating the substrate 40 in the ultrasonic cleaning tank.

Next, on the second soft magnetic film 51, a photoresist is applied and cured to form a resist film. Then, after patterning the resist film into a predetermined shape by using a photolithography technique, a heat treatment at about 250 ° C. is performed to cure the resist film. As a result, the opening 54a is formed at the connection portion with the second soft magnetic film 51 as shown in FIGS.
An eighth resist pattern 54 having the following pattern is formed. FIG. 41 is an enlarged schematic plan view showing the encircling portion C shown in FIG. 19, and FIG. 42 is a line segment X shown in FIG.
₁₆ is a schematic sectional view taken along -X ₁₆ '.

This eighth resist pattern 54 is formed by the second resist pattern 54.
This is for flattening the surface on which the soft magnetic film 51 is formed, and at least 5 μm in the depth direction from the portion of the second soft magnetic film 51 that becomes the medium sliding surface 20a. The second soft magnetic film 51 is provided over a region that completely covers the second soft magnetic film 51, and its shape is arbitrary. Here, the second soft magnetic film 51 is shaped so as to cover the entire surface of the second soft magnetic film 51 from a position about 20 μm away from the portion serving as the medium sliding surface 20a, and has a size of t ₁₅ × t. ₁₆ was set to 100 μm × 120 μm. However, the lower core layer 26
The above-described opening 54a is formed in a connection portion with the second soft magnetic film 51 to be formed. The size of the opening 54a is arbitrary, and here, the size t ₁₇ × t _{18 is set} to 20.
μm × 30 μm.

Next, as shown in FIGS. 43 and 44, a fourth non-magnetic non-conductive film 55 to be the magnetic gap layer 34 of the inductive head 23 is formed by sputtering or the like. FIG. 43 is an enlarged schematic plan view showing the encircling portion C shown in FIG. 19, and FIG. 44 is a schematic sectional view taken along line X ₁₇ -X ₁₇ ′ shown in FIG.

The material of the fourth non-magnetic non-conductive film 55 is, for example, Al ₂ O ₃ or S ₂ from the viewpoint of insulation properties and wear resistance.
It is suitably iO _2, etc., but is not limited thereto. Further, the fourth non-magnetic non-conductive film 55 is formed by an arbitrary method such as a sputtering method and a vapor deposition. The thickness t ₁₉ of the fourth non-magnetic non-conductive film 55 corresponds to a gap length required as a magnetic gap, and is set to an appropriate value according to the frequency of a signal recorded on a magnetic recording medium. In this case, it is set to 0.3 μm.

Next, as shown in FIGS. 45 and 46, on the fourth non-magnetic non-conductive film 55, a thin-film coil and a lead wire 35a below the inductive head 23 are formed.
Is formed by plating. FIG. 45 is an enlarged schematic plan view showing the encircled portion C shown in FIG. 19, and FIG. 46 is a line segment X shown in FIG.
₁₈ is a schematic sectional view taken along -X ₁₈ '.

When the first conductive film 56 is formed, first, for example, a 20-nm-thick Ti film or a 100-nm-thick film is used as a base film as a plating electrode for improving adhesion.
Are formed in this order by sputtering or the like.
Next, a resist material is applied on the base film to form a resist film, and a resist pattern having openings corresponding to the lower-layer thin-film coil and the lead wire 35a is formed using photolithography technology. . Next, using this resist pattern, for example, a Cu
Is deposited by a plating method. Next, after removing the resist pattern, ion etching is performed over the entire surface,
Unnecessary portions of the base film are removed. Thus, a first conductive film 56 having a predetermined shape as shown in FIGS. 45 and 46 is formed. In this case, the number of turns of the lower layer side thin film coil is 10 turns, but in FIGS. 45 and 46, up to 2 turns are shown for convenience.
Further, the material, forming method, dimensions,
The number of turns and the like are arbitrary and are not limited to these.

Next, as shown in FIGS. 47 and 48, the first conductive film 56 has an opening 57a at a connection portion with the second soft magnetic film 51, and the first conductive film 56 5
No. 9 in which the tip 56a of the thin film coil side of No. 6 is exposed.
The resist pattern 57 is formed. Incidentally, FIG.
FIG. 48 is an enlarged schematic plan view showing a surrounding portion C shown in FIG. 19, and FIG. 48 is a schematic sectional view taken along line X ₁₉ -X ₁₉ ′ shown in FIG.

The ninth resist pattern 57 has the first
This is for flattening the surface on which the conductive film 56 is formed, and is formed by the same method as the eighth resist pattern 54 described above. Further, the ninth resist pattern 57 is provided over a region that completely covers at least a portion of the first conductive film 56 to be a thin film coil,
Its shape is arbitrary. However, an opening 5 corresponding to the opening 54 a of the eighth resist pattern 54 described above is provided at a connection portion with the second soft magnetic film 51 serving as the lower core layer 26.
7a are formed. The tip 56a of the first conductive film 56 on the side of the thin film coil is provided with a ninth resist pattern 5.
7 must be exposed. The shape of the exposed portion is arbitrary, and here, the size t ₂₀ × t _{21 is set} to 15 μm × 1.
The thickness was 5 μm.

Next, as shown in FIGS. 49 and 50, on the ninth resist pattern 57, the thin film coil and the lead wire 35b on the upper layer side of the inductive head 23 are formed.
Is formed by plating. FIG. 49 is an enlarged schematic plan view of the encircling portion C shown in FIG. 19, and FIG. 50 is a line segment X shown in FIG.
It is a schematic cross-sectional view according to ₂₀ -X ₂₀ '.

The method of forming the second conductive film 58 is the same as that of the first conductive film 56 described above, and the description is omitted.
At this time, the tip 5 of the second conductive film 58 on the thin film coil side is used.
8a and a tip portion 56 of the first conductive film 56 on the thin film coil side.
a is electrically connected. In this case, the number of turns of the upper layer side thin film coil is set to 10 turns, but FIGS. 49 and 50 show up to 2 turns for convenience. Further, the material, the forming method, the size, the number of turns, and the like of the second conductive film 58 are arbitrary, and are not limited thereto.

Next, as shown in FIGS. 51 and 52, a tenth resist pattern 59 having an opening 59a at a connection portion with the upper core layer 33 is formed on the second conductive film 58.
To form FIG. 51 is an enlarged schematic plan view showing the encircling portion C shown in FIG. 19, and FIG.
Is a schematic sectional view taken along line X ₂₁ -X ₂₁ 'shown in.

The tenth resist pattern 59 is for flattening the surface on which the second conductive film 58 is formed, and is used for the above-mentioned eighth and ninth resist patterns 5.
4, 57. Further, the tenth resist pattern 59 is provided over a region that completely covers at least a portion of the second conductive film 58 that will become a thin film coil, and its shape is arbitrary. It should be noted that the above-described eighth and ninth resist patterns 54, 5 are provided at a connection portion with the second soft magnetic film 51 serving as the lower core layer 26.
An opening 59a corresponding to the openings 54a, 57a of the seventh is formed. In addition, it is not formed in a portion of the medium sliding surface 20a that becomes a recording gap.

Next, as shown in FIGS. 53 and 54, a third soft magnetic film 60 to be the upper core layer 33 is formed on the tenth resist pattern 59 by a lift-off method.
FIG. 53 is a schematic plan view showing the encircled portion C shown in FIG. 19 in an enlarged manner, and FIG. 54 is a schematic sectional view taken along line X ₂₂ -X ₂₂ ′ shown in FIG.

When the third soft magnetic film 60 is formed,
First, the lower core layer 26 described above is formed by photoresist.
Connecting portions with the second soft magnetic film 51, that is, the above-described eighth to tenth resist patterns 54, 57, 5
A mask having openings corresponding to the nine openings 54a, 57a, 59a is formed. Next, the fourth non-magnetic non-conductive film 55 exposed from this opening is removed by ion etching. As a result, a third soft magnetic film 60 and a second soft magnetic film 51, which will be described later, can come into contact with each other, and a magnetic path including the lower core layer 26 and the upper core layer 33 is formed.

Then, similarly to the above-described method for forming the second soft magnetic film 51, the third soft magnetic film 60 having a predetermined shape is formed by the lift-off method.

The third soft magnetic film 60 is formed on the medium sliding surface 2.
Has a tip portion 60a serving as 0a is narrowed shape (so-called figs shape), the width of the distal end portion 60a becomes the final recording track width Tw _2. Note that the recording track width Tw ₂ may be set to an appropriate value according to the system or the like, and is about 7 μm here. Also, this third
In the soft magnetic film 60, the shape, size, film thickness, etc. other than the tip portion 60a and its vicinity are arbitrary.
The thickness of the third soft magnetic film 60 was set to about 3 μm. Also,
The tip portion 60a of the third soft magnetic film 60 may have a shape shifted from the track center of the MR head 22 by a predetermined shift amount in the track width direction.

As the material of the third soft magnetic film 60, since the MR element 29 has already been formed, the above-described heat treatment at a high temperature performed on the first soft magnetic film 41 is performed. I can't do that, and there are limitations. For this reason, as the third soft magnetic film 60, a material exhibiting soft magnetism by performing a heat treatment at 350 ° C. or less, which is the heat resistant temperature of the MR element 29, or a material exhibiting soft magnetism without performing the heat treatment is used. There is a need. Although the same material as that of the second soft magnetic film 51 is used here, it is preferable to use a material having a high saturation magnetic flux density in order to further increase the recording efficiency.

Next, as shown in FIGS. 55 and 56, the external connection terminals 32a and 32b of the MR head 22 and the inductive head 2 are formed by using the photolithography technique.
3 are connected to the conductor portions 31a, 36b.
31b and the lead wires 35a, 35b. Figure 55 is a schematic plan view showing an enlarged part enclosed C shown in FIG. 19, FIG. 56 is a schematic sectional view taken along line X ₂₃ -X ₂₃ 'shown in FIG. 55.

Specifically, first, a mask having an opening in a portion to be the external connection terminals 32a, 32b, 36a, 36b is formed by photoresist. Next, the conductor portion 31 is removed from the opening by etching.
a, 31b and the lead wires 35a, 35b are exposed. Next, a conductive film is formed with the photoresist mask left as it is. Here, the conductive film is, for example,
Cu is formed to a thickness of about 6 μm by electrolytic plating using a copper sulfate solution. The conductive film may be formed by any method other than the electrolytic plating as long as it does not affect other films. After that, the photoresist serving as a mask is removed together with the conductive film formed on the photoresist. Thereby, the conductor portion 31
a, 31b and external connection terminals 32a, 32b of the MR head 22 on the ends of the lead wires 35a, 35b, respectively.
32b and external connection terminals 36a and 36b of the inductive head 23 are formed.

The external connection terminals 32a, 32
The length of b, 36a, 36b is, for example, about 50 μm. The external connection terminals 32a, 32b, 36
The widths of a and b are the same as the widths of the conductor portions 31a and 31b and the lead wires 35a and 35b, for example, 80 μm.
Degree.

Next, as shown in FIGS. 57 and 58, a protective film 61 serving as a protective layer 37 is formed on the entire surface in order to shield the entire merge type head 20 from the outside. Fig. 57
Is a schematic plan view showing an enlarged part enclosed C shown in FIG. 19, FIG. 58, the line segment X ₂₄ -X ₂₄ shown in FIG. 57 '
FIG.

Specifically, for example, Al ₂ O ₃ is formed to a thickness of about 4 μm by sputtering. As a material of the protective film 61, other than Al ₂ O ₃ can be used as long as it is a non-magnetic and non-conductive material.
In consideration of environmental resistance and wear resistance, Al ₂ O ₃ is preferable. The protective film 61 may be formed by a method other than sputtering, for example, may be formed by an evaporation method or the like.

Next, the external connection terminals 32a, 32b, 3
The protective film 61 formed on the entire surface is polished until the surfaces 6a and 36b are exposed. In this polishing step, for example, rough polishing is performed with diamond abrasive grains having a particle size of about 2 μm until the surfaces of the external connection terminals 32a, 32b, 36a, 36b are exposed. Then, buffing is performed with silicon abrasive grains to finish the surface to a mirror-like state. As a result, a first substrate 40 on which a number of head elements that finally become the merge type head 20 are formed is obtained.

Next, as shown in FIG. 59, the substrate 4 on which a number of head elements 62 to be the merge type head 20 are formed.
By dividing 0 into strips, a head block 63 in which the head elements 62 are arranged in the horizontal direction is formed. here,
The number of head elements 62 arranged in the horizontal direction is preferably as large as possible in consideration of productivity. In FIG. 59, for simplification, the head block 6 in which five head elements 62 are arranged is shown.
Although FIG. 3 is illustrated, actually, more head elements 62 may be arranged. Further, in this embodiment, the width t ₂₂ of the head block 63 is set to 2 mm.

[0155] Next, as shown in FIG. 60, on the head block 63, a second substrate 24 of the merge-type head 20, for example, the thickness t ₂₃ of approximately 0.7mm guard member 6
Paste 4 Polycrystalline ferrite or the like is used for the guard member 64. For bonding the guard member 64, for example, a resin-based adhesive or the like is used. In this case, the height t ₂₄ of the guard member 64 is lower than the height of the head blocks 63, the external connection terminals 32a formed on the head block 63, 32 b, 36a, to expose the 36b to the outside. Thus, the external connection terminals 32a, 3
2b, 36a, 36b can be electrically connected to the outside.

Next, as shown in FIG. 61, the surface to be the medium sliding surface 20a of the merge type head 20 is subjected to cylindrical polishing, and this surface is formed into an arc shape. Specifically, M
The front ends of the R head 22 and the inductive head 23 are exposed on the medium sliding surface 20a, and the cylindrical polishing is performed until their depth length reaches a predetermined length. As a result, the surface of the merge type head 20 that becomes the medium sliding surface 20a becomes an arc-shaped curved surface. The curved surface shape of the surface serving as the medium sliding surface 20a formed by this cylindrical polishing process may be an optimal shape according to the tape tension and the like, and is not particularly limited.

Next, as shown in FIG.
4 is connected to each head element 62.
Each time, it is divided along a cutting line DD ′ corresponding to the azimuth angle θ required by the system. Thereby, many individual merge type heads 20 as shown in FIG. 3 are obtained.

The merge type head 2 manufactured as described above
0, the merge type head 20 is attached to the chip base and the external connection terminals 32a, 3
2b, 36a, 36b are electrically connected to terminals provided on the chip base. And this merge type head 2
Numeral 0 is attached to a rotating drum 6 as shown in FIG.
Used as

As described above, in the merge type head 20 manufactured by applying the present invention, the upper surface 49a of the third non-magnetic non-conductive film 49 serving as the upper gap layer 28 is planarized, A second soft magnetic film 51 serving as the lower core layer 26 laminated thereon, a fourth non-magnetic non-conductive film 55 serving as the magnetic gap layer 34, and a third soft magnetic film 60 serving as the upper core layer 33 Can be flattened.

As a result, according to the present method, it is possible to easily manufacture the merge type head 20 in which the magnetic gap of the recording head section is made substantially linear, and a clear recording pattern, that is, a recording track of the magnetic tape 2 is formed. A high-quality merge type head 20 capable of forming a substantially linear recording pattern over the entire width can be manufactured.

In the merged head 20 manufactured by applying the present invention, the second soft magnetic film 51 serving as the upper shield layer 26 is flattened, so that the magnetic characteristics of the upper shield layer 26 are improved. In addition to the improvement, the generation of non-uniform magnetic domains can be suppressed.

Accordingly, the present invention is not limited to the merge type head 20 in which the above-described MR head 22 which is a read-only head and the inductive head 23 which is a write-only head are combined. It is also possible to apply to a shield type MR head.

Next, as another configuration example of the merge type head to which the present invention is applied, a merge type head 70 shown in FIG. 63 will be described. FIG. 63 is a schematic end view of the merge type head 70 viewed from the medium sliding surface side. Also,
In the following description, the description of the same parts as those of the merge type head 20 will be omitted, and the same reference numerals will be given in the drawings.

The merge type head 70 has a structure in which the upper surface 28a of the upper gap layer 28 formed on the step portion of the above-described magnetoresistive element portion is flattened. Upper surface 2 of upper shield layer (lower core layer) 26 formed through upper gap layer 28
6a is flattened. That is, in the merge type head 70, the upper surface 26a of the upper shield layer (lower core layer) 26 is flattened, so that the magnetic gap layer 34 and the upper core layer 35 constituting the recording head portion formed thereon are formed. Is flattened.

As a result, in the merge type head 70, the magnetic gap of the recording head portion can be made substantially linear, and a clear recording pattern, that is, a substantially straight line over the entire width of the recording track can be formed on the magnetic tape 2. A shaped recording pattern can be formed.

Therefore, in the merge type head 70, it is possible to suppress the adverse effect on the adjacent track, and to improve the reliability of the recorded information and the recording density. Further, since the effective when the recording track width Tw ₂ of the recording head portion is larger than the read track width Tw ₁ of the reproducing head portion,
It is possible to support a system that allows backward compatibility in the same format.

Next, the upper shield layer and the lower core layer 26
A method for flattening the upper surface 51a of the second soft magnetic film 51 will be described. Note that the method of manufacturing the merged head 70 is described with reference to the upper surface 51 a of the second soft magnetic film 51.
Except for the method of flattening the merged head 20 described above.
Since the manufacturing method is the same as that described above, a detailed description thereof will be omitted.

When flattening the upper surface 51a of the second soft magnetic film 51, first, the third non-magnetic non-conductive film 49 is formed in accordance with the step of the magnetoresistive element as shown in FIG. The step formed on the upper surface 51a of the second soft magnetic film 51 through the step is removed by performing mechanical polishing using diamond abrasive grains. Then, the surface of the second soft magnetic film 51 is
Further, it is mirror-finished by chemical polishing (buff polishing).

Here, the thickness t of the second soft magnetic film 51
₂₅ is not as strict as the thickness t _{12 of} the third non-magnetic non-conductive film 49 serving as the above-described upper gap layer 28, so that the step formed on the upper surface 51 a of the second soft magnetic film 51 by an arbitrary method is reduced. It may be removed.

The step formed on the second soft magnetic film 51 is, for example, about 100 nm, and can be flattened by mechanical polishing for several minutes. is there. However, the second soft magnetic film 51
In this case, since the lower core layer 26 constituting the recording head portion is formed, if the thickness is too small, the amount of magnetic flux that can pass through may be saturated. Therefore, the thickness t ₂₅ of the second soft magnetic film 51 is not only the thickness of the final lower core layer 26 but also
It is necessary to consider the polishing amount for flattening the upper surface 51a of the second soft magnetic film 51, and it is necessary to secure a polishing amount of at least 2 μm. The conditions of chemical polishing after mechanical polishing of the second soft magnetic film 51 are also optional, but it is desirable that the surface of the second soft magnetic film 51 be mirror-finished as much as possible. Thereby, as shown in FIG. 65, the upper surface of the second soft magnetic film 51 can be flattened.

As described above, in the merge type head 70 manufactured by applying the present invention, the upper surface 51a of the second soft magnetic film 51 serving as the upper shield layer (lower core layer) 26 is flattened. The fourth non-magnetic non-conductive film 55 serving as the magnetic gap layer 34 and the third soft magnetic film 60 serving as the upper core layer 33 can be planarized.

As a result, according to the present method, the merge type head 70 in which the magnetic gap of the recording head portion is made substantially linear can be easily manufactured, and a clear recording pattern, that is, a recording track of the magnetic tape 2 can be formed. A high-quality merge-type head 70 capable of forming a substantially linear recording pattern over the entire width can be manufactured.

[0173]

As described in detail above, according to the composite magnetic head of the present invention, the magnetic gap of the recording head can be made substantially linear, and clear recording on the magnetic recording medium can be achieved. A pattern, that is, a substantially linear recording pattern over the entire width of the recording track can be formed.

Therefore, it is possible to suppress the adverse effect on the adjacent track, and to improve the reliability of the recorded information and the recording density. Also, since it is effective when the recording track width of the recording head section is larger than the reproducing track width of the reproducing head section,
It is possible to support a system that allows backward compatibility in the same format.

Further, according to the method of manufacturing a composite magnetic head according to the present invention, it is possible to easily manufacture a composite magnetic head in which the magnetic gap of the recording head section is made substantially linear, and the magnetic recording medium can be easily manufactured. It is possible to manufacture a high-quality merge type head capable of forming a clear recording pattern, that is, a recording pattern that is substantially linear over the entire width of a recording track.

[Brief description of the drawings]

FIG. 1 is a schematic plan view showing an example of a magnetic tape device.

FIG. 2 is a schematic perspective view illustrating a configuration of a magnetic head device.

FIG. 3 is a schematic perspective view showing one configuration example of a merge type head to which the present invention is applied.

FIG. 4 is a schematic end view of the merge type head as viewed from a medium sliding surface side.

FIG. 5 is a schematic cross-sectional view for explaining a method for measuring the relationship between the size of the step and the output from the recording pattern.

FIG. 6 is a characteristic diagram illustrating a relationship between a size of a step portion and an output from a recording pattern.

FIG. 7 is a diagram for explaining a manufacturing process of the MR head, and is a schematic plan view showing a substrate.

FIG. 8 is a diagram for explaining a manufacturing process of the merge type head, and is a schematic cross-sectional view along line X ₁ -X ₁ ′ shown in FIG. 7;

FIG. 9 is a diagram for explaining a manufacturing process of the merge type head, and is a schematic plan view showing a state where a first soft magnetic film is formed on a substrate.

FIG. 10 is a diagram for explaining a manufacturing process of the merge type head, and is a schematic cross-sectional view along line X ₂ -X ₂ ′ shown in FIG.

FIG. 11 is a view for explaining a manufacturing process of the merge type head, and is a cross-sectional view of a principal part showing a state where an inverse tapered first resist pattern is formed on a substrate.

FIG. 12 is a view for explaining a manufacturing process of the merge type head, and is a fragmentary cross-sectional view showing a state where a second resist pattern having a two-layer structure is formed on the substrate.

FIG. 13 is a view for explaining a manufacturing process of the merge type head, and is a schematic plan view showing a state in which a first non-magnetic non-conductive film is embedded between a substrate and a first soft magnetic film. FIG.

FIG. 14 is a view for explaining a manufacturing process of the merge type head, and is a schematic cross-sectional view along line X ₃ -X ₃ ′ shown in FIG.

FIG. 15 is a diagram for explaining a manufacturing process of the merge type head, and is a schematic plan view showing a state where a second non-magnetic non-conductive film is formed on a flattened substrate.

FIG. 16 is a view for explaining the manufacturing process of the merge type head, and is a schematic sectional view along line X ₄ -X ₄ ′ shown in FIG.

FIG. 17 is a view for explaining a manufacturing process of the merge type head, and is a schematic plan view showing a state in which a thin film for an MR element is formed on a second non-magnetic non-conductive film.

FIG. 18 is a view for explaining a manufacturing process of the merge type head, and is a schematic cross-sectional view along line X ₅ -X ₅ ′ shown in FIG. 17;

FIG. 19 is a view for explaining a manufacturing process of the merge type head, in which a pair of permanent magnet films and a low-resistance film are formed of MR.
It is a schematic plan view showing the state where it was embedded in the element thin film.

FIG. 20 is a diagram for explaining a manufacturing process of the merge type head, and is a schematic plan view showing an enlarged encircled portion C shown in FIG. 19;

FIG. 21 is a view for explaining the manufacturing process of the merge type head, and is a schematic cross-sectional view along line X ₆ -X ₆ ′ shown in FIG. 20;

FIG. 22 is a view for explaining a manufacturing process of the merge type head, and shows a reverse tapered type third thin film for MR element.
FIG. 3 is a schematic plan view showing a state where the resist pattern of FIG.

FIG. 23 is a view for explaining the manufacturing process of the merge type head, and is a schematic cross-sectional view along line X ₇ -X ₇ ′ shown in FIG. 22;

FIG. 24 is a view for explaining a manufacturing process of the merge type head, and is a schematic plan view showing a state where a fourth resist pattern having a two-layer structure is formed on the MR element thin film.

FIG. 25 is a view for explaining the manufacturing process of the merge type head, and is a schematic cross-sectional view along line X ₈ -X ₈ ′ shown in FIG. 24;

FIG. 26 is a diagram for explaining a manufacturing process of the merge type head, and is a schematic plan view showing a state where a thin film for an MR element other than a part to be an MR element and a part to be a conductor is removed.

FIG. 27 is a view for explaining the manufacturing process of the merge type head, and is a schematic sectional view along line X ₉ -X ₉ ′ shown in FIG. 26;

FIG. 28 is a view for explaining the manufacturing process of the merge type head, and is a schematic plan view showing a state where a conductor is formed.

FIG. 29 is a view for explaining the manufacturing process of the merge type head, and is a schematic cross-sectional view along line X ₁₀ -X ₁₀ ′ shown in FIG. 28;

FIG. 30 is a diagram for explaining the manufacturing process of the merge type head, and is a schematic plan view showing a state where a third non-magnetic non-conductive film is formed.

FIG. 31 is a view for explaining the manufacturing process of the merge type head, and is a schematic sectional view along line X ₁₁ -X ₁₁ ′ shown in FIG. 30;

FIG. 32 is a view for explaining the manufacturing process of the merge type head, and is a schematic cross-sectional view along line X ₁₂ -X ₁₂ ′ shown in FIG. 30;

FIG. 33 is a diagram for explaining the manufacturing process of the merge type head, and is a schematic cross-section showing a state where a fifth resist pattern having a two-layer structure is formed on the third non-magnetic non-conductive film. FIG.

FIG. 34 is a diagram for explaining the manufacturing process of the merge type head, and is a schematic cross-sectional view showing a state where the upper surface of the third non-magnetic non-conductive film is flattened.

FIG. 35 is a view for explaining the manufacturing process of the merge type head, and is a schematic plan view showing a state where the second soft magnetic film is formed on the planarized third non-magnetic non-conductive film. FIG.

FIG. 36 is a view for explaining the manufacturing process of the merged head, and is a schematic cross-sectional view along line X ₁₃ -X ₁₃ ′ shown in FIG. 35;

FIG. 37 is a view for explaining the manufacturing step of the merge type head, and is a schematic plan view showing a state where a reverse tapered sixth resist pattern is formed on the second non-magnetic non-conductive film; It is.

FIG. 38 is a view for explaining the manufacturing process of the merged head, and is a schematic sectional view along line X ₁₄ -X ₁₄ ′ shown in FIG. 37;

FIG. 39 is a view illustrating a manufacturing step of the merge type head, and is a schematic plan view showing a state where a seventh resist pattern having a two-layer structure is formed on the second non-magnetic non-conductive film; FIG.

40 is a view for explaining the manufacturing process of the merge type head, and is a schematic cross-sectional view along line X ₁₅ -X ₁₅ ′ shown in FIG. 39.

FIG. 41 is a view for explaining the manufacturing process of the merge type head, and is a schematic plan view showing a state where an eighth resist pattern is formed on the second soft magnetic film.

42 is a view for explaining the manufacturing process of the merged head, and is a schematic sectional view along line X ₁₆ -X ₁₆ ′ shown in FIG. 41.

FIG. 43 is a view for explaining the manufacturing process of the merge type head, and is a schematic plan view showing a state where a fourth non-magnetic non-conductive film is formed.

FIG. 44 is a view for explaining the manufacturing process of the merge-type head, and is a schematic cross-sectional view along line X ₁₇ -X ₁₇ ′ shown in FIG. 43;

FIG. 45 is a diagram for explaining the manufacturing process of the merge type head, and is a schematic plan view showing a state where the first conductive film is formed on the fourth non-magnetic non-conductive film.

46 is a view for explaining the manufacturing process of the merge type head, and is a schematic cross-sectional view along line X ₁₈ -X ₁₈ ′ shown in FIG. 45.

FIG. 47 is a view for explaining the manufacturing process of the merge type head, and is a schematic plan view showing a state where a ninth resist pattern is formed on the first conductive film.

FIG. 48 is a view for explaining the manufacturing process of the merge-type head, and is a schematic cross-sectional view along line X ₁₉ -X ₁₉ ′ shown in FIG. 47;

FIG. 49 is a view for explaining the manufacturing process of the merge type head, and is a schematic plan view showing a state where the second conductive film is formed.

50 is a view for explaining the manufacturing process of the merged head, and is a schematic cross-sectional view along line X ₂₀ -X ₂₀ ′ shown in FIG. 49.

FIG. 51 is a view for explaining the manufacturing process of the merge type head, and is a schematic plan view showing a state where a tenth resist pattern is formed on the second conductive film.

52 is a view for explaining the manufacturing process of the merged head, and is a schematic sectional view along line X ₂₁ -X ₂₁ ′ shown in FIG. 51.

FIG. 53 is a view for explaining the manufacturing process of the merge type head, and is a schematic plan view showing a state where the third soft magnetic film is formed on the tenth resist pattern.

FIG. 54 is a view for explaining the manufacturing process of the merge-type head, and is a schematic sectional view along line X ₂₂ -X ₂₂ ′ shown in FIG. 53;

FIG. 55 is a view for explaining the manufacturing process of the merge type head, and is a schematic plan view showing a state in which an external connection terminal of the MR head and an external connection terminal of the inductive head are formed.

FIG. 56 is a view for explaining the manufacturing process of the merge-type head, and is a schematic sectional view along line X ₂₃ -X ₂₃ ′ shown in FIG. 55;

FIG. 57 is a view for explaining the manufacturing process of the merge-type head, and is a schematic plan view showing a state where the protective film is formed.

FIG. 58 is a view for explaining the manufacturing process of the merge-type head, and is a schematic cross-sectional view along line X ₂₄ -X ₂₄ ′ shown in FIG. 57;

FIG. 59 is a view for explaining the manufacturing process of the merged head, and is a schematic plan view showing a head block in which a large number of head elements are cut so as to be arranged in a horizontal direction.

FIG. 60 is a view for explaining the manufacturing process of the merged head, and is a schematic perspective view showing a state in which a guard member is attached to the head block.

FIG. 61 is a view for explaining the manufacturing process of the merged head, and is a schematic perspective view showing a state in which the surface of the merged head serving as the medium sliding surface has been subjected to cylindrical polishing;

FIG. 62 is a view for explaining the manufacturing process of the merged head, and is a schematic plan view showing a state where the head block to which the guard member is joined is divided into individual merged heads.

FIG. 63 is a schematic end view of another merge type head to which the present invention is applied, viewed from a medium sliding surface side.

FIG. 64 is a view for explaining the other manufacturing step of the merged head, and is a schematic sectional view showing a state where a step is formed on the upper surface of the second soft magnetic film.

FIG. 65 is a view for explaining the manufacturing process of the other merge type head, and is a schematic sectional view showing a state where the upper surface of the second soft magnetic film is flattened;

FIG. 66 is a schematic end view of a conventional merge type head viewed from a medium sliding surface side.

FIG. 67 is a diagram showing a state where a step is formed in a recording pattern recorded on a magnetic tape by the conventional merge type head.

FIG. 68 is a diagram showing a state where interference occurs in a recording pattern before and after recording on a magnetic tape by the conventional merge type head.

[Explanation of symbols]

Reference Signs List 1 magnetic tape device, 2 magnetic tape, 3 magnetic head device, 6 rotating drum, 7, 8 magnetic head, 12 fixed drum, 20 merge type head, 21 first substrate,
22 MR head, 23 Inductive head, 24
2nd substrate, 25 lower shield layer, 26 upper shield layer (lower core layer), 27 lower gap layer, 28
Upper gap layer, 29 MR element, 30a, 30b permanent magnet film, 31a, 31b conductor, 33 upper core layer, 34 magnetic gap layer, 35a, 35b lead-out wire, 36a, 36b external connection terminal, 37 protective layer, 40 Substrate, 41 first soft magnetic film (lower shield layer), 42 first resist pattern, 43 second resist pattern, 44 first non-magnetic non-conductive film, 45
Second non-magnetic non-conductive film (lower gap layer), 46 M
R element thin film (MR element), 47 third resist pattern, 48 fourth resist pattern, 49 third nonmagnetic non-conductive film (upper gap layer), 50 fifth resist pattern, 51 second Soft magnetic film (upper shield layer and lower core layer), 52 sixth resist pattern, 53
7th resist pattern, 54 8th resist pattern, 55 fourth non-magnetic non-conductive film (magnetic gap layer), 56 first conductive film, 57 ninth resist pattern, 58 second conductive film, 59 tenth resist pattern, 60 third soft magnetic film (upper core layer), 61 protective film (protective layer), 62 head element, 63 head block, 64 guard member

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Toru Katakura 6-7-35 Kita Shinagawa, Shinagawa-ku, Tokyo Sony Corporation F-term (reference) 5D033 BA12 BB43 DA07 DA31 5D034 BA04 BA08 BB12 CA05 CA08 DA07 5D111 AA01 AA16 AA19 AA23 DD06 HH16 JJ17 JJ22 KK04

Claims (16)

[Claims] 1. A composite comprising a magnetoresistive effect type reproducing head for reproducing signals recorded on a magnetic recording medium and an inductive type recording head for recording signals on the magnetic recording medium. At least a first soft magnetic film serving as a lower shield layer formed on a substrate, and a first nonmagnetic material serving as a lower gap layer formed on the first soft magnetic film. A non-conductive film; a magneto-resistance effect element formed on the first non-magnetic non-conductive film; and a second non-magnetic non-magnetic film serving as an upper gap layer formed on the magneto-resistance effect element. A conductive film; a second soft magnetic film serving as an upper shield layer and a lower core layer formed on the second nonmagnetic nonconductive film; and a magnetic film formed on the second soft magnetic film. A third non-magnetic non-conductive film serving as a gap layer; A third soft magnetic film serving as an upper core layer formed on a third non-magnetic non-conductive film, wherein the magnetoresistive element has a step at both ends thereof, A composite magnetic head, wherein the upper surface of the formed second non-magnetic non-conductive film is flattened. 2. The magneto-resistance effect element section includes: a magneto-resistance effect film serving as a magneto-resistance effect element; and a bias magnetic field for applying a bias magnetic field to the magneto-resistance effect element provided at both ends of the magneto-resistance effect film. A pair of permanent magnet films, and a pair of conductive films for supplying a sense current to the magnetoresistive element provided on the pair of permanent magnet films; 2. The composite magnetic head according to claim 1, wherein the pair of permanent magnet films and the conductive film provided at both ends of the magnetoresistive film have different thicknesses. 3. The composite magnetic head according to claim 1, wherein a track width of the recording head section with respect to the magnetic recording medium is larger than a track width of the reproducing head section with respect to the magnetic recording medium. . 4. The composite magnetic head according to claim 1, wherein the composite magnetic head is mounted on a rotating drum and records and / or reproduces signals on a tape-shaped magnetic recording medium by a helical scan method. 5. A composite comprising a combination of a magnetoresistive read head for reproducing signals recorded on a magnetic recording medium and an inductive write head for recording signals on said magnetic recording medium. At least a first soft magnetic film serving as a lower shield layer formed on a substrate, and a first nonmagnetic material serving as a lower gap layer formed on the first soft magnetic film. A non-conductive film; a magneto-resistance effect element formed on the first non-magnetic non-conductive film; and a second non-magnetic non-magnetic film serving as an upper gap layer formed on the magneto-resistance effect element. A conductive film; a second soft magnetic film serving as an upper shield layer and a lower core layer formed on the second nonmagnetic nonconductive film; and a magnetic film formed on the second soft magnetic film. A third non-magnetic non-conductive film serving as a gap layer; A third soft magnetic film serving as an upper core layer formed on a third non-magnetic non-conductive film, wherein the magnetoresistive element has a step at both ends thereof, A composite magnetic head, wherein an upper surface of the second soft magnetic film formed via the second non-magnetic non-conductive film is flattened. 6. The magneto-resistance effect element section includes a magneto-resistance effect film serving as a magneto-resistance effect element, and a bias magnetic field applied to the magneto-resistance effect element provided at both ends of the magneto-resistance effect film. A pair of permanent magnet films, and a pair of conductive films for supplying a sense current to the magnetoresistive element provided on the pair of permanent magnet films; 6. The composite magnetic head according to claim 5, wherein the pair of permanent magnet films and the conductive film provided at both ends of the magnetoresistive film have different thicknesses. 7. A composite magnetic head according to claim 5, wherein a track width of said recording head section with respect to said magnetic recording medium is larger than a track width of said reproducing head section with respect to said magnetic recording medium. . 8. The composite magnetic head according to claim 5, wherein the composite magnetic head is mounted on a rotary drum and records and / or reproduces signals on a tape-shaped magnetic recording medium by a helical scan method. 9. A composite comprising a magneto-resistance effect type reproducing head for reproducing a signal recorded on a magnetic recording medium and an inductive type recording head for recording a signal on the magnetic recording medium. At least a first step of forming a first soft magnetic film to be a lower shield layer on a substrate; and a first step of forming a lower gap layer on the first soft magnetic film. A second step of forming the first non-magnetic non-conductive film; a third step of forming a magneto-resistance effect element on the first non-magnetic non-conductive film; The second to be the upper gap layer
A fourth step of forming a non-magnetic non-conductive film, and a fifth step of forming a second soft magnetic film to be an upper shield layer and a lower core layer on the second non-magnetic non-conductive film A sixth step of forming a third non-magnetic non-conductive film serving as a magnetic gap layer on the second soft magnetic film; and an upper core layer on the third non-magnetic non-conductive film. The third
A seventh step of forming a soft magnetic film of the above. The magnetoresistive element section formed in the third step has a step at both ends thereof, and the fourth step In the above, after forming the second non-magnetic non-conductive film, the step formed on the upper surface of the second non-magnetic non-conductive film according to the step of the magneto-resistance effect element portion is removed, A method of manufacturing a composite magnetic head, comprising flattening an upper surface of the second non-magnetic non-conductive film. 10. The magnetoresistive element portion formed in the third step includes a magnetoresistive effect film serving as a magnetoresistive effect element, and the magnetoresistive effect films provided at both ends of the magnetoresistive effect film. A pair of permanent magnet films for applying a bias magnetic field to the element, and a pair of conductive films for supplying a sense current to the magnetoresistive element provided on the pair of permanent magnet films; The step portion is formed by different thicknesses of the magnetoresistive film and the pair of permanent magnet films and conductive films provided at both ends of the magnetoresistive film. Item 10. The method for manufacturing a composite magnetic head according to Item 9. 11. In the fourth step, when the upper surface of the second non-magnetic non-conductive film is flattened, the lower layer side is more inner than the upper layer side on the second non-magnetic non-conductive film. Forming a resist pattern having an undercut shape that penetrates into the side, and etching the second non-magnetic non-conductive film using the resist pattern as a mask, thereby forming a step in the magnetoresistive element portion. Removing a step formed on the upper surface of the second non-magnetic non-conductive film in accordance with the portion; removing the resist pattern from the second non-magnetic non-conductive film; And subjecting the upper surface of the non-magnetic non-conductive film to chemical polishing. 12. The composite magnetic head according to claim 9, wherein a track width of said recording head section with respect to said magnetic recording medium is larger than a track width of said reproducing head section with respect to said magnetic recording medium. Manufacturing method. 13. A composite comprising a combination of a magnetoresistive head for reproducing signals recorded on a magnetic recording medium and an inductive recording head for recording signals on said magnetic recording medium. At least a first step of forming a first soft magnetic film to be a lower shield layer on a substrate; and a first step of forming a lower gap layer on the first soft magnetic film. A second step of forming the first non-magnetic non-conductive film; a third step of forming a magneto-resistance effect element on the first non-magnetic non-conductive film; The second to be the upper gap layer
A fourth step of forming a non-magnetic non-conductive film, and a fifth step of forming a second soft magnetic film to be an upper shield layer and a lower core layer on the second non-magnetic non-conductive film A sixth step of forming a third non-magnetic non-conductive film serving as a magnetic gap layer on the second soft magnetic film; and an upper core layer on the third non-magnetic non-conductive film. The third
A seventh step of forming a soft magnetic film of the above. The magnetoresistive element section formed in the third step has a step at both ends thereof, and the fifth step And forming the second soft magnetic film on the upper surface of the second soft magnetic film via the second non-magnetic non-conductive film according to the step portion of the magnetoresistive element portion after forming the second soft magnetic film. A method of manufacturing a composite magnetic head, comprising: removing a step formed and flattening an upper surface of the second soft magnetic film. 14. The magnetoresistive element portion formed in the third step, wherein the magnetoresistive effect film serving as a magnetoresistive effect element and the magnetoresistive effect provided at both ends of the magnetoresistive effect film A pair of permanent magnet films for applying a bias magnetic field to the element, and a pair of conductive films for supplying a sense current to the magnetoresistive element provided on the pair of permanent magnet films; The step portion is formed by different thicknesses of the magnetoresistive film and the pair of permanent magnet films and conductive films provided at both ends of the magnetoresistive film. Item 14. The method for manufacturing a composite magnetic head according to Item 13. 15. In the fifth step, when the upper surface of the second soft magnetic film is flattened, the upper surface of the second soft magnetic film is subjected to mechanical polishing, whereby Removing a step formed on the upper surface of the second soft magnetic film via the second non-magnetic non-conductive film according to the step of the effect element portion; and upper surface of the second soft magnetic film 14. The method of manufacturing a composite magnetic head according to claim 13, further comprising a step of subjecting the composite magnetic head to chemical polishing. 16. The composite magnetic head according to claim 13, wherein a track width of said recording head section with respect to said magnetic recording medium is larger than a track width of said reproducing head section with respect to said magnetic recording medium. Manufacturing method.