JP2002043587A - Mesa type diode and its manufacturing method - Google Patents
Mesa type diode and its manufacturing methodInfo
- Publication number
- JP2002043587A JP2002043587A JP2000228103A JP2000228103A JP2002043587A JP 2002043587 A JP2002043587 A JP 2002043587A JP 2000228103 A JP2000228103 A JP 2000228103A JP 2000228103 A JP2000228103 A JP 2000228103A JP 2002043587 A JP2002043587 A JP 2002043587A
- Authority
- JP
- Japan
- Prior art keywords
- mesa
- terminal
- solder
- diode
- connection terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 238000005476 soldering Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 229910000679 solder Inorganic materials 0.000 abstract description 15
- 230000002093 peripheral effect Effects 0.000 abstract description 8
- 238000005530 etching Methods 0.000 description 8
- 239000011800 void material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4007—Shape of bonding interfaces, e.g. interlocking features
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/8434—Bonding interfaces of the connector
- H01L2224/84345—Shape, e.g. interlocking features
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- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】 本発明はメサ型ダイオード
及びその製造方法に関し、特に面実装用のメサ形ダイオ
ード及びその製造方法に関するものである。The present invention relates to a mesa diode and a method of manufacturing the same, and more particularly, to a mesa diode for surface mounting and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】メサ型ダイオードは比較的小規模の生産
にも適した構造であり、かつベベル面の距離を長くとる
ことにより、高耐圧のダイオードを得るにも好適な構造
である。図４に、従来のメサ型ダイオードの断面図の一
例を示す。メサ型の形状とは、円錐の途中を水平面で切
断して、上面に小主面である小径円１２が形成される円
錐台状の形状をいう。このメサ型のダイオードチップ１
は、底の小主面である大径円１３の部分と小径円１２の
部分とベベル部１１とを有している。小径円１２の部分
には、その小径円１２の直径に対応した凹面を有する接
続端子２がハンダ付けされている。その接続端子２の延
長先端は端子フレーム３２に再度ハンダ付けされて所定
の端子としてプリント基板等に接続される。また、底の
大径円１３は、同様に端子フレーム３１にハンダ付けさ
れて所定の端子としてプリント基板等に接続される。2. Description of the Related Art A mesa diode has a structure suitable for relatively small-scale production, and also has a structure suitable for obtaining a diode having a high withstand voltage by increasing a distance of a bevel surface. FIG. 4 shows an example of a cross-sectional view of a conventional mesa diode. The shape of the mesa has a truncated cone shape in which a small diameter circle 12, which is a small main surface, is formed on the upper surface by cutting the middle of the cone along a horizontal plane. This mesa type diode chip 1
Has a large-diameter circle 13, a small-diameter circle 12, and a bevel portion 11, which are small main surfaces at the bottom. A connection terminal 2 having a concave surface corresponding to the diameter of the small diameter circle 12 is soldered to the small diameter circle 12. The extended end of the connection terminal 2 is soldered again to the terminal frame 32 and connected to a printed board or the like as a predetermined terminal. The large-diameter circle 13 at the bottom is similarly soldered to the terminal frame 31 and connected to a printed board or the like as a predetermined terminal.
【０００３】[0003]
【発明が解決しようとする課題】 しかしながら、この
ような従来のメサ形ダイオードにあっては、小径円側の
ハンダ接続時に周囲の気体を巻き込み、いわゆるボイド
９と呼ばれるハンダ内の微小気泡が内包される例が極め
て小さい確率ではあるが認められた。このボイド９が存
在すると、例えば周囲温度が上昇したときに、ボイド９
内の空気が膨張したり、またボイド９内にエッチング時
の薬品の液が微少量封じ込められていてそれによる作用
があり、これら空気の膨張や薬品液の作用がダイオード
の特性に悪影響が及ぼすことになり得る。本発明は、こ
のような構造において、メサ形ダイオードチップと接続
端子をハンダ接続する際のボイドをより完璧になくする
ことにより、メサ形ダイオードの信頼性をより一層向上
させることを課題とする。However, in such a conventional mesa diode, when the solder is connected to the small-diameter circular side, the surrounding gas is entrained, and so-called voids 9 in the solder are included. In some cases, a very small probability was recognized. When the void 9 exists, for example, when the ambient temperature rises, the void 9
The air inside expands, and a small amount of the chemical solution at the time of etching is sealed in the void 9 and has an effect due to this. The expansion of the air and the effect of the chemical solution adversely affect the characteristics of the diode. Can be It is an object of the present invention to further improve the reliability of a mesa diode by eliminating a void when soldering a mesa diode chip to a connection terminal in such a structure.
【０００４】[0004]
【課題を解決するための手段】 この課題を解決するた
めに、本発明では以下の手段を提案するものである。す
なわち、メサ型シリコンチップに接続端子をハンダ付け
してなるメサ型ダイオードであって、前記接続端子につ
いては、そのメサ型シリコンチップの小主面側のわずか
に内側の位置に対応する先端環状部とこの先端環状部に
囲まれる上方に開放している穴部を有してなることを特
徴とするメサ型ダイオードを提案するものである。Means for Solving the Problems To solve this problem, the present invention proposes the following means. That is, a mesa diode formed by soldering a connection terminal to a mesa silicon chip, wherein the connection terminal has a tip annular portion corresponding to a position slightly inside the small main surface side of the mesa silicon chip. And a hole which is open upward and is surrounded by the annular portion at the tip.
【０００５】 また、第２の手段として、メサ型シリコ
ンチップに接続端子をハンダ付けする工程については、
還元ガス雰囲気、又は空気中でハンダ付けする工程を有
することを特徴とする上記メサ型ダイオードの製造方法
を提案するものである。この製造方法により、接続端子
のハンダ付けに際して酸化を防ぎ、ダイオード完成後の
信頼性を高く保つことでがきる。As a second means, a step of soldering a connection terminal to a mesa-type silicon chip is described as follows.
It is another object of the present invention to provide a method for manufacturing the above-mentioned mesa diode, comprising a step of soldering in a reducing gas atmosphere or air. With this manufacturing method, oxidation can be prevented when soldering the connection terminals, and the reliability after completion of the diode can be kept high.
【０００６】 また、第３の手段として、メサ型シリコ
ンチップに接続端子をハンダ付けされた後にエッチング
処理することを特徴とする上記メサ型ダイオードの製造
方法を提案するものである。この製造方法により、エッ
チング処理の後にダイオードの特性に影響を与える工程
が存在しないという効果がある。As a third means, the present invention proposes a method for manufacturing the above-mentioned mesa-type diode, characterized in that a connection terminal is soldered to a mesa-type silicon chip and then an etching process is performed. According to this manufacturing method, there is an effect that there is no step that affects the characteristics of the diode after the etching process.
【０００７】[0007]
【発明の実施の形態】 図１は、本発明に係るメサ形ダ
イオードの実施の形態の側面断面図であり、図２はその
上面図である。以下両図を参照して説明する。。まずメ
サ形シリコンチップ１は、ベベル部１１と上面の小主面
である小径円部１２と底面の大径円部１３とからなる。
接続端子２の形状は、全体を薄い無酸素銅の銅板で作
り、環状の水平部２４と、この水平部２４の環の内側に
下方にすりばち状の内周面２２と、穴部２３と、すりば
ち状の外周面２８と、先端環状部２９とを形成する。ま
た、水平部２４の一端には短冊状の傾斜延長部２５とそ
の先端にふたたび水平の外部接続部２６とが形成され
る。メサ形シリコンチップ１の上面の小径円部１２の上
には、ハンダ４を介して接続端子２が近接してハンダ付
けされる。このとき、ハンダ４は、その溶融状態のとき
に、接続端子２の先端環状部２９付近から図１の矢印方
向に従って、すりばち状の内周面２２と穴部２３との方
向にハンダがぬれる。穴部２３は上方向に文字どおり穴
が明いているので、ハンダ４が溶融状態のときにも、か
りにボイドが発生しても、その穴部２３により、ボイド
は消滅してしまう。また、すりばち状の外周面２８の方
向にもハンダがぬれる。メサ形シリコンチップ１と接続
端子２とがこのように一体化した後に、端子フレーム３
１、３２の上におく。これら端子フレーム３１、３２
は、図示を省いた場所で多数個連結されており、この端
子フレーム３１の上にメサ形シリコンチップ１の大主面
である大径円部１３をハンダ４を介してハンダ付けされ
る。また、接続端子２の外部接続部２６は端子フレーム
３２の上にハンダ付けされる。この後、エッチング処理
を行う。FIG. 1 is a side sectional view of an embodiment of a mesa diode according to the present invention, and FIG. 2 is a top view thereof. Hereinafter, description will be given with reference to both figures. . First, the mesa-shaped silicon chip 1 includes a bevel portion 11, a small-diameter circular portion 12 which is a small main surface on the upper surface, and a large-diameter circular portion 13 on the bottom surface.
The shape of the connection terminal 2 is made entirely of a thin oxygen-free copper plate, and includes an annular horizontal portion 24, an inner peripheral surface 22, which is rubbed downward inside the ring of the horizontal portion 24, and a hole portion 23. A slash-shaped outer peripheral surface 28 and a tip annular portion 29 are formed. At one end of the horizontal portion 24, a strip-shaped inclined extension portion 25 and a horizontal external connection portion 26 are formed again at the end. The connection terminal 2 is soldered close to the small-diameter circular portion 12 on the upper surface of the mesa-shaped silicon chip 1 via the solder 4. At this time, when the solder 4 is in the molten state, the solder is wet from the vicinity of the distal end annular portion 29 of the connection terminal 2 in the direction of the inner peripheral surface 22 and the hole 23 in the direction of the arrow in FIG. Since the hole 23 has a hole literally upward, even when the solder 4 is in a molten state and a void is generated in the scale, the void disappears due to the hole 23. In addition, the solder is also wet in the direction of the outer peripheral surface 28 having a rubbed shape. After the mesa-shaped silicon chip 1 and the connection terminal 2 are integrated in this way, the terminal frame 3
Place on 1 and 32. These terminal frames 31, 32
Are connected at a place not shown in the figure, and a large-diameter circular portion 13 which is a large main surface of the mesa-type silicon chip 1 is soldered on the terminal frame 31 via a solder 4. The external connection part 26 of the connection terminal 2 is soldered on the terminal frame 32. Thereafter, an etching process is performed.
【０００８】 接続端子２の形状は、メサ型シリコンチ
ップ１の小径円部１２の形状寸法のわずかに内側の位置
に対応する先端環状部２９を有することが望ましい。そ
して、小径円部１２から先端環状部２９に接続されて流
れる電流は、すりばち状の内周面２２および外周面２８
に一様に流れて、順次に水平部２４、傾斜延長部２５、
外部接続部２６へと伝達される。この間の電流経路は、
充分な導電容量と、さらには電熱容量を有する。この構
成は、メサ型シリコンチップ１のチップ径の大小、チッ
プ母材、極性の如何にかかわらず有効である。It is desirable that the shape of the connection terminal 2 has a tip annular portion 29 corresponding to a position slightly inside the shape and size of the small-diameter circular portion 12 of the mesa-type silicon chip 1. The current flowing from the small-diameter circular portion 12 to the tip annular portion 29 flows through the inner peripheral surface 22 and the outer peripheral surface
And the horizontal portion 24, the inclined extension portion 25,
The signal is transmitted to the external connection unit 26. The current path during this is
It has sufficient conductive capacity and even electric heat capacity. This configuration is effective regardless of the size of the chip diameter of the mesa-type silicon chip 1, the chip base material, and the polarity.
【０００９】 図３は、エッチングと表面処理後の断面
図である。メサ形シリコンチップ１のベベル部１１は、
エッチングの作用により外形の変化がわずかに表れてい
る。このベベル部１１の外表面を中心に付近にはジャン
クションコーティングレジン５が塗布されて、表面の保
護に寄与する。この状態が同時に多数個完成するもので
あり、そして、図示しないトラスファーモールド工程を
行い、図示を省いた場所で多数個連結されている端子フ
レーム３１、３２は、その連結部において、切断分離さ
れる。さらに、その端子フレーム３１、３２の成形工程
を経て、メサ型ダイオード１０が完成する。FIG. 3 is a cross-sectional view after etching and surface treatment. The bevel portion 11 of the mesa-shaped silicon chip 1
A slight change in the outer shape appears due to the action of the etching. A junction coating resin 5 is applied near the outer surface of the bevel portion 11 to contribute to protection of the surface. In this state, a large number of terminal frames 31 and 32 are completed at the same time, and a transfer molding process (not shown) is performed. You. Further, the mesa diode 10 is completed through a step of forming the terminal frames 31 and 32.
【００１０】 なお、本発明においてメサ型チップの断
面形状は円に限らず、正方形や多角形であっても、同様
に適用することができる。[0010] In the present invention, the cross-sectional shape of the mesa chip is not limited to a circle, but can be similarly applied to a square or a polygon.
【００１１】[0011]
【発明の効果】 以上述べたように本発明によれば、メ
サ形チップに中央部に穴をあけた接続端子をハンダ付け
することにより、ハンダ内のボイドをより完璧になくす
ことが可能となり、その後のエッチング処理のハンダ内
ボイドへの薬品などの侵入がなくなることから、実装時
のガス化によるチップ汚染による不良誘発を回避して製
品の信頼性向上に大きく寄与できる。As described above, according to the present invention, it is possible to more completely eliminate voids in the solder by soldering the connection terminal having a hole at the center to the mesa chip. Since the invasion of chemicals and the like into the voids in the solder in the subsequent etching process is eliminated, induction of defects due to chip contamination due to gasification during mounting can be avoided, thereby greatly contributing to improvement in product reliability.
【図１】 本発明に係るメサ型ダイオードの断面図であ
って、ハンダ付け後の断面図である。FIG. 1 is a cross-sectional view of a mesa diode according to the present invention, which is a cross-sectional view after soldering.
【図２】 本発明に係るメサ型ダイオードの断面図であ
って、ハンダ付けとエッチングと表面処理後の断面図で
ある。FIG. 2 is a cross-sectional view of the mesa diode according to the present invention, which is a cross-sectional view after soldering, etching, and surface treatment.
【図３】 本発明に係るメサ型ダイオードの上面図であ
る。FIG. 3 is a top view of the mesa diode according to the present invention.
【図４】 従来のメサ型ダイオードの一例の断面図を示
す。FIG. 4 shows a cross-sectional view of an example of a conventional mesa diode.
１…メサ型シリコンチップ ２…接続端子
４…ハンダ ５…ジャンクションコーティングレジン １０…メサ
型ダイオード ３１、３２…端子フレーム1. Mesa silicon chip 2. Connection terminal
4 solder 5 junction coating resin 10 mesa diode 31 32 terminal frame
Claims (3)
付けしてなるメサ型ダイオードであって、前記接続端子
については、そのメサ型シリコンチップの小主面側のわ
ずかに内側の位置に対応する先端環状部とこの先端環状
部に囲まれる上方に開放している穴部を有してなること
を特徴とするメサ型ダイオード。1. A mesa-type diode in which a connection terminal is soldered to a mesa-type silicon chip, wherein the connection terminal corresponds to a position slightly inside the small main surface of the mesa-type silicon chip. A mesa diode comprising: a tip annular portion; and a hole that is open upward and is surrounded by the tip annular portion.
をハンダ付けする工程については、還元ガス雰囲気、又
は空気中でハンダ付けする工程を有することを特徴とす
る請求項１記載のメサ型ダイオードの製造方法。2. The mesa-type diode according to claim 1, wherein the step of soldering the connection terminal to the mesa-type silicon chip includes a step of soldering in a reducing gas atmosphere or air. Production method.
をハンダ付けされた後にエッチング処理することを特徴
とする請求項１記載のメサ型ダイオードの製造方法。3. The method for manufacturing a mesa diode according to claim 1, wherein said connection terminal is soldered to said mesa silicon chip and then etched.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000228103A JP2002043587A (en) | 2000-07-28 | 2000-07-28 | Mesa type diode and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000228103A JP2002043587A (en) | 2000-07-28 | 2000-07-28 | Mesa type diode and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002043587A true JP2002043587A (en) | 2002-02-08 |
Family
ID=18721462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000228103A Pending JP2002043587A (en) | 2000-07-28 | 2000-07-28 | Mesa type diode and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002043587A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009170596A (en) * | 2008-01-15 | 2009-07-30 | Nissan Motor Co Ltd | Power converter and manufacturing method thereof |
| JP2010010173A (en) * | 2008-06-24 | 2010-01-14 | Denso Corp | Electronic device and method of manufacturing the same |
| JP2011086743A (en) * | 2009-10-15 | 2011-04-28 | Mitsubishi Electric Corp | Power semiconductor device and method for manufacturing the power semiconductor device |
| JP2012094923A (en) * | 2012-02-15 | 2012-05-17 | Denso Corp | Electronic device |
| JP2016167480A (en) * | 2015-03-09 | 2016-09-15 | 三菱電機株式会社 | Power semiconductor device |
-
2000
- 2000-07-28 JP JP2000228103A patent/JP2002043587A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009170596A (en) * | 2008-01-15 | 2009-07-30 | Nissan Motor Co Ltd | Power converter and manufacturing method thereof |
| JP2010010173A (en) * | 2008-06-24 | 2010-01-14 | Denso Corp | Electronic device and method of manufacturing the same |
| JP2011086743A (en) * | 2009-10-15 | 2011-04-28 | Mitsubishi Electric Corp | Power semiconductor device and method for manufacturing the power semiconductor device |
| JP2012094923A (en) * | 2012-02-15 | 2012-05-17 | Denso Corp | Electronic device |
| JP2016167480A (en) * | 2015-03-09 | 2016-09-15 | 三菱電機株式会社 | Power semiconductor device |
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