JP2002026714A - High withstand voltage level shift circuit for high withstand voltage IC - Google Patents

Abstract

(57) Abstract: A voltage generated by a current flowing through first or second voltage generating means reduces a gate-source voltage of a high breakdown voltage n-channel or p-channel transistor,
Reduce the heat generated by the transistor. A high voltage level shift circuit diagram is shown. A constant current source such as a resistor or a depletion mode MOSFET is preferably used for R _N1 and R _P1 as voltage generating means and R _N2 and R _P2 as load means. Although the voltage limiting means Z _N1 and Z _P1 may use a Zener diode,
It is better to use a MOS diode (a diode in which the source and gate of the MOSFET are short-circuited and used as a diode) because the Zener voltage can be suppressed low. R _N3 and R _{P3 as} current limiting means are resistors. In this case, they are added to limit the current flowing through the MOS diodes Z _N1 and Z _P1 , but if there is no need to limit the flowing current, Of course, this resistor need not be added.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high withstand voltage IC used for controlling and driving a power device and the like, and relates to a high withstand voltage IC formed on a semiconductor substrate different from the power device or on the same semiconductor substrate.

[0002]

2. Description of the Related Art Here, since there are many references, the names of the documents are numbered collectively and described at the end of the section [Problems to be Solved by the Invention].
]. The contents in parentheses after the USP No in the reference are brief descriptions of the patent contents.

The power devices [1] to [4] are widely used in many fields such as inverters and converters for motor control, inverters for lighting, various power supplies, and switches for driving solenoids and relays. The drive and control of this power device has traditionally been performed by electronic circuits [5] and [6] that are configured by combining individual semiconductor elements and electronic components.
In recent years LSI (highly integrated IC, IC is an integrated circuit)
Tens of volt class low-voltage ICs using technology [7], [8] and hundreds of volts
Class high withstand voltage ICs [9] and [10] have been put to practical use, and power ICs [11] and [12] in which drive / control circuits and power devices are integrated on the same semiconductor substrate are used. 2. Description of the Related Art Converters such as converters have been reduced in size and higher in reliability.

FIG. 6 is a circuit diagram mainly illustrating a power portion of a motor control inverter. Three-phase motor Mo
Power device (here, IG
BTs Q1 to Q6 and diodes D1 to D6) constitute a bridge circuit and have a structure of a power module [13] housed in the same package. Where I
GBT is an insulated gate bipolar transistor. The main power supply V _CC is normally a high voltage of 100 to 400 VDC. When the high potential side of the main power supply V _CC is represented by V _CCH and the low potential side is represented by V _CCL , the IGBT Q1 connected to V _CCH
To drive Q3, the potential of the gate electrode of the IGBT becomes higher than this, so that the drive circuit includes a photocoupler (PC) or a high voltage IC (HVIC: High Voltage I).
integrated circuit) is used.
Input / output terminal I / O (Input / Output) of the drive circuit
t) is usually connected to a microcomputer, which controls the entire inverter.

FIG. 7 shows a high breakdown voltage IC (HV) used in FIG.
2 shows a block diagram of an internal configuration unit of IC). Its structure
The operation will be described below. Microphone through input / output terminal I / O
Exchanges signals with the computer, which IGBT
To generate a control signal to turn on and turn off
Control circuit CU (Control Unit)
Signals from control circuit CU are received on input lines SIN4 to SIN6.
IGBT gate drive output line OUT4
6 to IGBT, and the overcurrent of IGBT
Output terminal [14] OC4 ~ 6, overheat the temperature terminal [15] OT4 ~
6 and an abnormal signal is output on output lines SOUT4-6.
And the main power supply V of FIG._CCLow potential side V of_{CC L} I connect to
Gate drive circuit GDU for driving GBTs Q4 to Q6
(GateDrive Unit) 4-6 and GDU4
Main power supply V with the same function as_CCHigh potential side V of_CCH Connect to
Gate driving circuits GDU1 to GDU3 for driving Q1 to Q3
And V_CCL Level control circuit CU signal and V_CCH level
And V_CCLGDU1-3 signals that go back and forth between levels
(SIN1-3, SOUT1-3)
Level shift circuit LSU (Level Shi
ft Unit). GDU1-3
Drive power supply V_DD1 ~ V_DD3 (See Fig. 8)
V on the high potential side of_DDH1~ V_DDH3, Low potential side V_DDL1~ V
_DDL3From the drive power supply in GDUs 4-6.
Common power supply is V_DDC (Also omitted in FIG. 8),
This common power supply V_DDC V on the high potential side of_DDHC, Low potential side V
_DDLCIndicated by GDU 4-6 and CU
Eve common power supply V_DDC Is about 10 to 20 V.
Power supply V_DDC Low potential side V of_DDLCIs the main power supply V in FIG._CCLow
Potential side V_CCL Connect to

FIG. 8 shows a more detailed connection diagram between GDU1 and IGBTQ1 in FIG. Here are the other GDUs and I
GBT is omitted. Drive power supply V _{DD1 for} GDU1
Is about 10 to 20 V, and the lower potential side V _DDL1 is IG.
The collector terminal C of the IGBT Q1 is connected to the emitter terminal E of the BTQ1, that is, to the U phase of the inverter output.
Connected to the high potential side V _CCH of _CC . For this reason, IG
When BTQ1 is turned on, the potential of V _DDL1 becomes substantially equal to the potential of V _CCH , and when IGBTQ1 is turned off, V _DDL1 becomes V
The potential of _DDL1 becomes substantially equal to the potential of V _CCL . Therefore,
A higher withstand voltage than the voltage of the main power supply V _CC is required between the GDU 1 and the other circuit units, and the same is true for the GDUs 2 and 3. The level shift circuit LSU itself must have a high breakdown voltage.
In the figure, the IGBT Q1 includes a current detection terminal [16] M, a temperature detection element θ and a temperature detection terminal [17] Temp, and the gate drive circuit GDU1 detects an abnormality of the IGBT Q1 by the current detection terminal OC1 and the temperature detection terminal OT1, An abnormal signal is output from the output line SOUT1. OUT1 is a gate drive terminal.

FIG. 9 is a block diagram of the same circuit as that of FIG. 6 using a product called an intelligent power module [18]. In this case, the gate drive circuits GDU1 to GD
U6 is composed of a low-voltage IC, an individual electronic component, and a semiconductor element, and is provided in a package on the power device side together with the power devices (Q1 to Q6, D1 to D6). Even in this case, a photocoupler (PC) or a high withstand voltage IC (HVIC) is used as an external drive circuit.

FIG. 10 shows IGBT Q1 and GDU of FIG.
1 shows the circuit around 1 in detail. SIN1
And SOUT1 are connected to an externally configured PC or HVIC. As another configuration example, GDU1 and Q
Also disclosed are power IC technologies [19] and [20] that integrate 1 on one chip (same semiconductor substrate) and power IC technologies [11] and [12] that integrate all circuits in FIG. 9 on one chip. Have been.

FIG. 11 shows a high voltage IC (HVI) shown in FIG.
C) shows a plan view of the chip, and shows the arrangement of each circuit unit.
It is drawn so that it can be understood. High withstand voltage from other circuit units
GDU1 that needs to be separated by the splicing separation [21], [22],
[10] and dielectric isolation [23], [11], [12]
Is formed in a closed island, and its periphery is
Termination structure [11], [21] HVJT (High voltage to insulate
The structure of the end of the applied junction)
I have. The main power supply V is included in the level shift circuit LSU._CCLow
The potential V on the potential side_CCL Drive signal V level signal_DD1
Potential V on the lower potential side of_DDL1Level signal (input line SI
N1 channel)
A MOSFET (HVN) is provided. This high endurance
A central drain electrode D
_N HVJT is set around the high voltage junction termination structure [10], [11].
Have been killed. Also, VDU is in the isolated island of GDU1.
_{DD L1}The level signal (the signal of the output line SOUT1) is
_CCLHigh voltage p-ch for level shift to level signal
A channel MOSFET (HVP) is provided.
Drain electrode D_P High-voltage junction termination structure H
VJT is provided. Then, the input line of GDU1 is
SIN1 and the output line SOUT1 are connected to a high-voltage junction termination.
Pass it over the structure HVJT and between GDU1 and LSU
They are wired over each other. Each GDU is shown in FIG.
OUT terminal, OC terminal, and OT terminal shown in FIG.
V for DU1 to GDU3_DDH1~ V_DDH3Terminal, V_DDL1~
V_DDL3Are arranged, and GDU4 to GDU6 are
V_DDHCTerminal and V_DDLCTerminals are arranged. In the figure
Gives a detailed description of GDU1 and GDU4, and other GDUs
Detailed description of the arrangement is omitted.

The problems of the above-mentioned conventional high-voltage IC and power IC are that it is difficult to increase the withstand voltage exceeding 600 V, and the manufacturing cost is high. The more detailed description is as follows. (1) Problems Regarding Separation Technology As described above, a separation technology for electrically separating a circuit unit (for example, GDU1, 2, 3 in FIG. 11) having a significantly different potential from other portions with high withstand voltage electrically from other portions. Has dielectric isolation [11], [12], [23], junction isolation [10], [21], [22], self isolation
There are technologies such as [20] and [24]. However, dielectric isolation and junction isolation have a complicated isolation structure and a high manufacturing cost, and the higher the breakdown voltage, the higher the manufacturing cost. Although self-isolation can keep the manufacturing cost low, a technology for increasing the withstand voltage has not yet been developed in the CMOS (complementary MOSFET) configuration, while an analog circuit has been developed in the NMOS (n-channel MOSFET) configuration capable of increasing the breakdown voltage. It is extremely difficult to improve the accuracy of the current detection circuit and the temperature detection circuit described above. (2) Issues related to high-breakdown-voltage junction termination structure HVJT The high-breakdown-voltage junction termination structure is for vertical power devices [2
5], [26] for horizontal high voltage devices [27], [28], [29]
For example, various structures are disclosed for individual uses. However, in the HVIC which is a high breakdown voltage IC or a high breakdown voltage power IC in which a power device is integrated, a high breakdown junction termination structure between the integrated circuit units (GDU1 to GDU1 in FIG. 11).
3), a high-breakdown-voltage junction termination structure for a high-breakdown-voltage lateral n-channel MOSFET (around _DN of HVN in FIG. 11), and a high-breakdown-voltage junction termination structure for a high-breakdown-voltage lateral p-channel MOSFET (D of HVP in FIG. 11). _It is necessary to form a high-breakdown-voltage junction termination structure for many applications such as a high-breakdown-voltage junction termination structure for a vertical power device on the same chip. In order to realize a high breakdown voltage IC or a power IC with a structure having less versatility as in the related art, many different high breakdown voltage junction termination structures HVJT must be formed on the same chip, and the manufacturing cost increases.

[0011]

Problems relating to the high-breakdown-voltage junction termination structure under the signal wiring include the following. In the high-withstand voltage IC, signals are exchanged between integrated circuit units (for example, GDU1 and LSU in FIG. 11) having greatly different potentials, and therefore, it is necessary to pass signal wiring over the high-breakdown-voltage junction termination structure HVJT. However, when a signal wiring is passed over the high-breakdown-voltage junction termination structure HVJT, there is a problem that the withstand voltage of the high-breakdown-voltage junction termination structure HVJT decreases due to the influence of the potential of the signal wiring [30]. In order to solve this problem, several structures [10], [11], [12], [31] have been proposed, but the cost is high due to the complicated structure. Further, these proposed structures cannot eliminate the influence of the signal wiring at all, and have a length that reduces the degree of reduction in withstand voltage.
Although a voltage withstand voltage of about 00 V can be put to practical use, a voltage withstand voltage higher than that has not yet been realized.

The present invention provides a high-breakdown-voltage junction termination structure HVJT.
To solve the above-mentioned problem that the withstand voltage of the high-breakdown-voltage junction termination structure HVJT is reduced due to the influence of the potential of the signal line when the signal wire passes therethrough, a low-cost high-breakdown-voltage IC and a high-breakdown-voltage level shift circuit used therefor The purpose is to provide. References [1] USP 4,364,073 (related to IGBTs) [2] USP 4,893,165 (related to non-punch-through IGBTs) [3] USP 5,008,725 (related to power MOSFETs) [4] Compliant with EP 0,071,916 and JP-A-58-39065 (high speed) [5] USP 5,091,664 (drive circuit related) [6] USP 5,287,023 (drive circuit related) [7] USP 4,947,234 (low voltage IC and power device related) [8] USP 4,937,646 (low voltage IC and (Power device related)

[9] A. Wegener and M. Amato "A HIGH VOLTAGE INTERF
ACE IC FOR HALF-BRIDGECIRCUITS "Electrochemical So
ciety Extended Abstracts, vol. 89-1, pp. 476-478 (1989) [10] T. Terashima et al "Structure of 600V IC an
d A New Voltage Sensing Device "IEEE Proceeding of
the 5th International Symposium on Power Semicond
uctor Devices and ICs, pp.224-229 (1993) [11] K. Endo et al "A 500V 1A 1-chip Inverter IC
with a New Electric Field Reduction Structure "IE
EE Proceeding of the 6th International Symposium o
n Power Semiconductor Devices and ICs, pp.379-383 (1
994) [12] N. Sakurai et al "A three-phase inverter IC
for AC220V with a drasticall small chip size and
highly intelligent functions "IEEE Proceeding of T
he 5th International Symposium on Power Semiconduc
tor Devices and ICs, pp. 310-315 (1993) [13] M. Mori et al "A HIGH POWER IGBT MODULE FOR
TRACTION MOTOR DRIVE "IEEE Proceeding of the 5th I
nternational Symposium on Power Semiconductor Devi
ces and ICs, pp.287-289 (1993) [14] USP 5,159,516 (related to current detection method) [15] USP 5,070,322 (related to temperature detection method) [16] USP 5,097,302 (related to current detection element) [17] USP 5,304,837 (related to temperature detection element) [18] K. Reinmuth et al "Intelligent Power Module
s for Driving Systems "IEEE Proceeding of the 6th I
nternational Symposium on Power Semiconductor Devi
ces and ICs, pp. 93-97 (1994) [19] USP 4,677,325 (IPS related) [20] USP 5,053,838 (IPS related) [21] R. Zambrano et al "A New Edge Structure for
2kVolt Power IC Operation "IEEE Proceeding of the
6th International Symposium on Power Semiconducto
r Devices and ICs, pp. 373-378 (1994) [22] MFChang et al "Lateral HVIC with 1200-V
Bipolar and Field-Effect Devices "IEEE Transactions
on Electron devices, vol.ED-33, No.12, pp.1992-2001
(1986) [23] T. Ohoka et al "A WAFER BONDED SOI STRUCTUR
E FOR INTELLIGENT POWER ICs "IEEE Proceeding of th
e 5th International Symposium on Power Semiconduct
or Devices and ICs, pp.119-123 (1993) [24] JPMILLER "A VERY HIGH VOLTAGE TECHNOLOGY
(up to 1200V) FOR VERTICAL SMART POEWR ICs "Electr
ochemical Society Extended Abstracts, vol.89-1, pp.4
03-404 (1989) [25] USP 4,399,449 (HVJT related to power devices) [26] USP 4,633,292 (HVJT related to power devices) [27] USP 4,811,075 (HVJT related to horizontal MOSFETs) [28] USP 5,258,636 (Horizontal MOSFETs) [29] USP 5,089,871 (Horizontal MOSFET HVJT related) [30] PKTMOK and CATSALAMA "Interconnect I
nduced Breakdown in HVIC's "Electrochemical Societ
y Extended Abstracts, vol.89-1, pp.437-438 (1989) [31] USP 5,043,781 (Power IC related)

[0013]

In order to achieve the above object, as a solution, one of the main terminals is connected to the high potential side of the high voltage power supply, and the other of the main terminals is connected to the load.
A high-voltage level shift circuit of a high-voltage IC for driving gates of at least two power devices, wherein a low-voltage side low-voltage voltage is supplied by a low-voltage power supply based on a low-potential side of a high-voltage power supply. A level shift circuit for converting a signal of a circuit portion into a signal to a high-potential-side low-withstand-voltage circuit portion to which a current is supplied from a low-voltage power supply with reference to one of the main terminals of the power device; One terminal of the first load means and one terminal of the first voltage limit means are connected to the drain (collector) electrode of the withstand voltage n-channel transistor, and the other terminals of the first load means and the first voltage limit means are connected to a high potential. The first voltage generating means is connected to the high-potential side of the low-voltage power supply of the low-voltage circuit portion of the low-voltage circuit portion and the source (emitter) electrode of the high-voltage n-channel transistor. A second voltage limiting means connected between the gate (base) electrode of the high-breakdown-voltage n-channel transistor and the low-potential side of the low-voltage power supply in the low-potential-side low-breakdown-voltage circuit portion; A signal from the low-potential-side low-withstand-voltage circuit portion is input to the gate (base) electrode of the high-withstand-voltage n-channel transistor, and a signal is output from the drain (collector) electrode of the high-withstand-voltage n-channel transistor to the high-potential-side low-withstand voltage circuit portion. Shall be done. Preferably, the second voltage limiting means comprises an n-channel MOS diode having a gate (base) and a drain (collector) connected to each other. Alternatively, a high withstand voltage level shift circuit of a high withstand voltage IC for driving the gate of one or more power devices in which one of the main terminals is connected to the high potential side of the high voltage power supply and the other of the main terminals is connected to the load And
A signal of a high-potential-side low-withstand-voltage circuit portion to which a current is supplied by a low-voltage power supply with reference to one of the main terminals of the power device is connected to a low-voltage power supply with reference to the low-potential side of the high-voltage power supply. A level shift circuit for converting a signal to a low-potential-side low-withstand-voltage circuit portion to which a current is supplied, wherein a second load means and a third voltage-limiting means are provided at a drain (collector) electrode of a high-withstand-voltage p-channel transistor. And the other terminals of the second load means and the third voltage limiting means are connected to the low potential side of the low voltage power supply of the low potential side low withstand voltage circuit portion, and the second voltage generating means Is high withstand voltage p
The fourth voltage limiting means is connected between the source (emitter) electrode of the channel transistor and the high-potential side of the low-voltage power supply in the high-potential-side low-withstand-voltage circuit portion, and the fourth voltage limiting means is connected to the gate (base) electrode of the high-withstand-voltage p-channel transistor. It is connected between the high-potential side of the low-voltage power supply and the high-voltage
A signal from the high-potential-side low-withstand-voltage circuit portion is input to the gate (base) electrode of the channel transistor, and a signal from the drain (collector) electrode of the high-withstand-voltage p-channel transistor is output to the high-potential-side low-withstand voltage circuit portion. And
Further, it is preferable that the fourth voltage limiting means is constituted by a p-channel MOS diode in which a gate (base) and a drain (collector) are connected.

[0014] In the text, "high-potential-side low-withstand-voltage circuit portion to which current is supplied by a low-voltage power supply with reference to one of the main terminals of the power device" If the power device on the high potential side is an n-channel device, the load side is the reference, and if the power device is a p-channel device, the power supply side is the reference. Here, "becoming a reference" means that the source (emitter) electrode of the power device becomes a reference potential point (commonly called a ground point). According to the first to fourth aspects, the voltage generated by the current flowing through the first or second voltage generating means has a high withstand voltage n.
Since the voltage between the gate (base) and source (emitter) of the channel or p-channel transistor is reduced,
The current flowing through the high-breakdown-voltage n-channel or p-channel transistor is suppressed low, and the heat generation of the transistor is reduced, so that the reliability is improved.

According to the second and fourth aspects, the voltage of the MOS diode is lower than the voltage of the normally used zener diode. Therefore, the current can be further reduced, the heat generation of the transistor is further reduced, and the reliability is reduced. Further improve.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The reference numerals in the following drawings are the same as those described above, and the description is omitted. 1A and 1B show a first reference example. FIG. 1A shows a plan view, and FIG. 1B shows a side view. GDU in which the high-voltage junction termination structure HVJT is a high-potential-side low-voltage circuit
1 to GDU3 and a high withstand voltage n-channel MOSFET (HV
N) and a high withstand voltage p-channel MOSFET (HVP). High withstand voltage n-channel MOSFE
T (HVN) and high withstand voltage p-channel MOSFET (H
VP) means that the drain electrode has a high withstand voltage junction termination structure HVJT
, The source electrode and the gate electrode are arranged outside the loop of the high-breakdown-voltage junction termination structure HVJT. And a high-breakdown-voltage n-channel MOSFET (HVN)
Drain electrode _DN and GDU1, high breakdown voltage p-channel MO
Drain electrode D _P and the LSU and the S of the SFET (HVP)
They are connected at IN1 and SOUT1, respectively. This S
IN1 and SOUT1 are formed by bonding wires such as gold wires. In addition, the space between the outer end of each of the high-breakdown-voltage junction termination structures HVJT of GDU1 to GDU3 and the outside end of each of the high-breakdown-voltage junction termination structures HVJT of HVN and HVP and the bonding wire are separated by 100 μm or more, so that the space capacity (floating) is increased. Capacity) can be reduced by an order of magnitude. The larger the distance, the smaller the space capacity can be, but practically the maximum is about 5 mm, and usually about 1 mm is good. Here, the outer end means a portion in contact with the low-potential-side low-voltage circuit in the case of each of the high-voltage junction termination structures HVJT and HVN of GDU1 to GDU3, and a portion in contact with the high-potential-side low-voltage circuit in the case of HVP.

2A and 2B show a second reference example. FIG. 2A is a plan view, and FIG. 2B is a side view. High withstand voltage junction termination structure H
VJT is composed of GDU4 to GDU6, CU and LSU, low potential side low withstand voltage circuit, GDU1 to GDU3, high withstand voltage n-channel MOSFET (HVN) and high withstand voltage p
Provided in each channel MOSFET (HVP),
High withstand voltage n-channel MOSFET (HVN) and GDU1,
A high-breakdown-voltage p-channel MOSFET (HVP) and LSU are connected at SIN1 and SOUT1. This SIN
1, SOUT1 is a bonding wire such as a gold wire. Also, each of the high-breakdown-voltage junction termination structures H of GDU1 to GDU3
The same effect as described above can be obtained by separating the bonding wire from the outer end of the VJT and the outer end of the HVN, HVP high-breakdown-voltage junction termination structure HVJT by at least 100 μm.

3A and 3B show a third reference example, wherein FIG. 3A is a plan view and FIG. 3B is a side view. High withstand voltage junction termination structure H
VJT is at the chip periphery, GDU1 to GDU3, high withstand voltage n
The channel MOSFET (HVN) and the high-breakdown-voltage p-channel MOSFET (HVP) are provided respectively, and the high-breakdown-voltage n-channel MOSFET (HVN) and GDU1, and the high-breakdown-voltage p-channel MOSFET (HVP) and LSU are SIN.
1 and SOUT1. This SIN1, SO
UT1 is a bonding wire such as a gold wire. G
DU1 to GDU3, the outer end of each high-breakdown-voltage junction termination structure HVJT, and the HVN, HVP high-breakdown-voltage junction termination structure H
The outer edge of the VJT and the bonding wire are 100 μm
With the above separation, the same effect as described above can be obtained.

FIG. 4 is a plan view of the fourth reference example. G which is a gate drive unit IC included in the high breakdown voltage IC of FIG.
DUIC1 to GDUIC6 are manufactured by individual bare chips (naked chips), and the other components HV
High withstand voltage IC composed of N, HVP, LSU, CU
(HV-IC) is manufactured with another bare chip,
These bare chips are arranged on a printed circuit board PCB.
Is connected at one end with a bonding wire of the drain electrode D _N and SIN1 of HVN, the source electrode S _P output HVP, is connected at one end and the bonding wires each of the gate electrode G _P and V _DDH1, SOUT1. In the HVN, the drain electrode is inside the high breakdown voltage junction termination structure HVJT, and the source electrode and the gate electrode are outside. In the HVP, the drain electrode is outside the high breakdown voltage junction termination structure HVJT, and the source electrode and the gate electrode are inside. In addition, the arcs in the figures indicate connections by bonding wires. The bonding wire and the high-voltage junction termination structure HVJT are 100 μm.
m or more to reduce space capacity. Instead of the bare chip, a chip assembled in a package may of course be used. GDUIC1 to individual chip
GDUIC6 is connected to an intelligent power module (I
High-voltage IC integrated into PM) and excluding this function
(HV-IC) may be mounted on the IPM case.

FIG. 5 is a diagram showing a high voltage level shift circuit according to the first embodiment. A constant current source such as a resistor or a depletion mode MOSFET is preferably used for R _N1 and R _P1 as voltage generating means and R _N2 and R _P2 as load means. Zener diodes may be used for the voltage limiting means Z _N1 and Z _P1 , but MOS diodes (MOSFETs)
(Which is used as a diode with its source and gate short-circuited) is superior since the Zener voltage can be kept low. R _N3 and R _P3 which are current limiting means are resistors,
In this case, the resistor is added to limit the current flowing through the MOS diodes Z _N1 and Z _P1. However, if it is not necessary to limit the flowing current, the resistor may be omitted as a matter of course.

In the text of "the high-potential-side low-withstand-voltage circuit portion to which a current is supplied by a low-voltage power supply with reference to one of the main terminals of the power device", one of them is a high potential. When the power device on the side is an n-channel element, the load side is the reference, and when the power device is a p-channel element, the power supply side is the reference. Here, "becoming a reference" means that the source (emitter) electrode of the power device becomes a reference potential point (commonly called a ground point).

MOSFETs are suitable for high-breakdown-voltage n-channel or p-channel transistors.
(Junction field effect transistor), bipolar transistor, IGBT (insulated gate transistor), SIT
(Electrostatic induction type transistor) or the like. Gold wires are used for the signal wires (SIN1, SOUT1, etc.), but aluminum wires may be used. High withstand voltage junction termination structure H
If the distance between the VJT and the signal wiring is largely different from the signal wiring and the distance between the VJT and the signal wiring is 100 μm or more, the influence of the potential of the signal wiring hardly affects the high-breakdown-voltage junction termination structure HVJT. Withstand voltage junction termination structure HVJT
No intervening discharge phenomenon occurs.

[0023]

According to the present invention, the effect of lowering the breakdown voltage of the high breakdown voltage junction termination structure due to the signal wiring is reduced, and a low-cost, high-performance IC with high breakdown voltage can be realized. Furthermore, a driving circuit for a high-performance power device at low cost can be realized by using these.

[Brief description of the drawings]

FIG. 1 is a first embodiment of the present invention, wherein (a) is a plan view,
(B) is a side view

2A is a plan view of a second embodiment of the present invention, FIG.
(B) is a side view

3A is a plan view of a third embodiment of the present invention, FIG.
(B) is a side view

FIG. 4 is a plan view of a fourth embodiment of the present invention;

FIG. 5 is a diagram showing a high voltage level shift circuit according to the first embodiment of the present invention;

FIG. 6 is a circuit configuration diagram mainly illustrating a power portion of a motor control inverter;

FIG. 7 is a block diagram of an internal configuration unit of a high withstand voltage IC (HVIC) used in FIG. 6;

FIG. 8 is a more detailed connection diagram of GDU1 and IGBTQ1 of FIG. 7;

FIG. 9 is a configuration diagram in which the same circuit as in FIG. 6 is configured using a product called an intelligent power module.

FIG. 10 is a diagram showing a circuit around IGBT Q1 and GDU1 of FIG. 9 in detail;

FIG. 11 is a plan view of the high-voltage IC (HVIC) chip shown in FIG. 7;

[Explanation of symbols]

HVIC High voltage IC HVJT High voltage junction termination structure V _DD1 Drive power supply S Source terminal D Drain terminal G Gate terminal Q1 Power device (IGBT) Q2 Power device (IGBT) Q3 Power device (IGBT) Q4 Power device (IGBT) Q5 Power device (IGBT) Q6 Power device (IGBT) D1 Power device (diode) D2 Power device (diode) D3 Power device (diode) D4 Power device (diode) D5 Power device (diode) D6 Power device (diode) Mo Motor V _CC main Power supply PC Photocoupler I / O I / O terminal CU control circuit LSU Level shift circuit GDU1 Gate drive circuit GDU2 Gate drive circuit GDU3 Gate drive circuit GDU4 Over gate drive circuit GDU5 gate drive circuit GDU6 gate drive circuit SIN input line SOUT output line V _DDC common power V _DDHC high potential side V _DDLC low potential side V _DD drive power V _DDH1 high potential side of the drive power of the common power of the common power V _{ddH 2} drive power of the high-potential side V _DDH3 drive power supply of the high-potential side V _DDL1 drive power supply on the low potential side V _DDL2 drive power supply on the low potential side V _DDL3 drive power supply on the low potential side OUT gate drive terminal OC current detection terminal OT temperature Detection terminal M Current detection terminal (IGBT side) Temp Temperature detection terminal (Temperature detection element side) θ Temperature detection element K Cathode A Anode U U-phase HVN High voltage n-channel MOSFET HVP High voltage p-channel MOSFET D _N drain electrode D _P drain Electrode _SP source electrode _GP gate electrode

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H03K 19/018 F-term (Reference) 5F048 AB10 AC06 AC10 BH04 5J055 AX47 BX16 CX20 DX22 EX07 EY13 EZ20 EZ62 FX05 FX12 FX34 GX01 GX02 GX08 5J056 AA00 AA32 BB14 BB44 BB59 CC12 DD17 DD28 DD56 FF09 GG09 KK02

Claims (4)

[Claims] A high withstand voltage of a high withstand voltage IC for driving a gate of one or more power devices having one of main terminals connected to a high potential side of a high voltage power supply and the other of the main terminals connected to a load. A level shift circuit, wherein a signal of a low-potential-side low-withstand-voltage circuit portion supplied with current by a low-voltage power supply with reference to a low-potential side of a high-voltage power supply is referenced to one of the main terminals of the power device. A level shift circuit for converting a signal to a high-potential-side low-withstand-voltage circuit portion to which a current is supplied by a low-voltage power supply, wherein a first load means and a first load means are connected to a drain (collector) electrode of a high-withstand-voltage n-channel transistor. One terminal of the first voltage limiting means is connected, and the other terminal of the first load means and the other terminal of the first voltage limiting means are connected to the high potential side of the low voltage power supply in the high potential side low withstand voltage circuit portion. 1
Is connected between the source (emitter) electrode of the high-breakdown-voltage n-channel transistor and the low-potential side of the low-voltage power supply in the low-potential-side low-breakdown-voltage circuit portion, and the second voltage limiting means is connected to the high-breakdown-voltage n-channel transistor. It is connected between the gate (base) electrode of the transistor and the low-potential side of the low-voltage power supply in the low-potential-side low-withstand-voltage circuit portion. And a signal from the drain (collector) electrode of the high-breakdown-voltage n-channel transistor to a high-potential-side low-breakdown-voltage circuit portion is output. 2. The high withstand voltage IC according to claim 1, wherein said second voltage limiting means comprises an n-channel MOS diode having a gate (base) and a drain (collector) connected to each other. Level shift circuit. 3. A high withstand voltage of a high withstand voltage IC for driving a gate of one or more power devices having one of the main terminals connected to the high potential side of the high voltage power supply and the other of the main terminals connected to the load. A level shift circuit, wherein a signal of a high-potential-side low-withstand-voltage circuit portion to which a current is supplied from a low-voltage power supply based on one of the main terminals of the power device,
A level shift circuit for converting a signal to a low-potential-side low-withstand-voltage circuit portion to which a current is supplied from a low-voltage power supply with reference to a low-potential side of the high-voltage power supply, wherein a drain (collector) of a high-withstand-voltage p-channel transistor is provided. One terminal of the second load means and one terminal of the third voltage limit means is connected to the electrode, and the other terminals of the second load means and the third voltage limit means are connected to the low voltage of the low potential side low withstand voltage circuit portion. A second voltage generator connected between the source (emitter) electrode of the high-breakdown-voltage p-channel transistor and the high-potential side of the low-voltage power supply in the high-potential-side low-breakdown-voltage circuit portion; Fourth voltage limiting means is connected between the gate (base) electrode of the high-breakdown-voltage p-channel transistor and the high-potential side of the low-voltage power supply in the high-potential-side low-breakdown-voltage circuit portion. A high withstand voltage level characterized in that a signal from a high withstand voltage low withstand voltage circuit portion is input to the electrode, and a signal from the drain (collector) electrode of the high withstand voltage p-channel transistor to the high withstand voltage low withstand voltage circuit portion is output. Shift circuit. 4. The high voltage level shifter and circuit according to claim 3, wherein the fourth voltage limiting means comprises a p-channel MOS diode having a gate (base) and a drain (collector) connected.