JP2002009316A - Solar battery and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-output solar battery that can reliably fix a spherical cell even if it is not a full sphere, prevents an etching agent from leaking, solves the problem of continuity between inner and outer electrodes in high-density packaging, and improves reliability and working efficiency, and to provide the solar battery. SOLUTION: This manufacturing method of a solar battery includes a process for preparing the spherical cell where a second-conductivity-type semiconductor layer is formed so that one portion of a first-conductivity-type semiconductor layer is exposed on the surface of a spherical body substrate having the first-conductivity-type semiconductor layer, a process for forming a conductive substrate having a projecting part on the surface, a process for forming an insulating resin member on the projection, a process for electrically connecting the exposed part of the first-conductivity-type semiconductor layer to the conductive substrate by placing the spherical cell for pressurization so that the exposed part of the first-conductivity-type semiconductor layer of the spherical body cell comes into contact with the insulating resin member, a process that prepares an electrode plate that has an opening mating with the arrangement of the spherical body cell and forms the edge part of the opening in a saw tooth shape, fits the opening to the spherical body cell for fixation, and electrically connects the second-conductivity-type semiconductor layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method of manufacturing a solar cell and a solar cell, and more particularly to a method of manufacturing a solar cell using spherical cells and a solar cell.

[0002]

2. Description of the Related Art An internal electric field is generated at a pn junction of a semiconductor. When light is applied to the pn junction to generate an electron-hole pair, the generated electrons and holes are separated by the internal electric field.
Electrons are collected on the n side and holes are collected on the p side. When a load is connected to the outside, a current flows from the p side to the n side. Utilizing this effect, solar cells have been put into practical use as elements for converting light energy into electric energy.

In recent years, a technique has been developed in which a semiconductor element is manufactured by forming a circuit pattern on a spherical semiconductor (Ball Semiconductor) having a diameter of 1 mm or less, such as single crystal or polycrystalline silicon.

As one of the methods, there has been proposed a method of manufacturing a solar array in which a large number of semiconductor particles are connected by using an aluminum foil (JP-A-6-13633). In this method, as shown in FIG. 10, a semiconductor particle 207 having an n-type skin portion and a p-type interior is placed in an aluminum foil opening through an aluminum foil 201.
209 so that it protrudes from both sides of the
Is removed, and an insulating layer 221 is formed. Next, the p-type interior 21
1 and the insulating layer 221 thereon are removed, and a second aluminum foil 219 is bonded to the removed region 217.
The flat area 217 is the second aluminum foil 2 as a conductive part.
19 to provide a good ohmic contact.

[0005]

In the conventional method of manufacturing a solar cell (solar array) as described above, when the internal core of a spherical cell (semiconductor particle) is a p-type semiconductor layer,
In order to take an electrode of an n-type semiconductor layer formed on the surface, an aluminum foil is used as an n-type electrode by punching an aluminum foil with a punch or the like and embedding the spherical cell in the punched opening. However, in practice, it is very difficult to fix the spherical cell embedded in the punched opening. In addition, when the spherical cell is not a true sphere (spherical shape or diameter is not constant), it is very difficult to embed and fix such a spherical cell in an opening of the same diameter, and a gap between the edge of the opening and the spherical cell Can be done. Therefore, at the time of etching for exposing the p-type diffusion layer region after the embedding,
If there is a gap between the edge of the opening and the spherical cell, the etching agent leaks to the opposite side of the exposed surface of the p-type semiconductor layer, and the surface of the opposite spherical cell, which should not be etched, is also etched. The reliability of the system will be impaired.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and secures fixation even when a spherical cell is not a true sphere (spherical shape or diameter is not constant), so that an etching agent does not leak during etching. To provide a method of manufacturing a high-output solar cell and a solar cell, which can solve the problem of conduction between an inner electrode and an outer electrode in high-density mounting, improve reliability, workability is good, and have high output. With the goal.

[0007]

According to a first method of manufacturing a solar cell of the present invention, a part of the first conductive type semiconductor layer is exposed on the surface of a spherical substrate having the first conductive type semiconductor layer. A step of preparing a spherical cell formed by forming a second conductivity type semiconductor layer; a step of forming a conductive substrate having a projection on the surface; and a step of forming an insulating resin member on the projection.
The spherical cell is placed so that the exposed portion of the first conductive semiconductor layer of the spherical cell is in contact with the insulating resin member, and is pressed to thereby expose the exposed portion of the first conductive semiconductor layer. And a step of electrically connecting the conductive substrate, comprising an opening corresponding to the arrangement of the spherical cells, preparing an electrode plate having an edge of the opening formed in a saw-tooth shape, Fitting the opening to the spherical cell and fixing the opening, and electrically connecting the opening to the second conductive type semiconductor layer. According to this method, since the edge of the opening is formed in a saw-tooth shape, even a spherical cell that is not a true sphere (spherical shape and diameter is not constant) can be reliably fixed to the electrode plate. Further, the fixing between the conductive substrate and the spherical cell can be reliably performed by bonding the insulating resin member by pressing, and at the same time, an insulating layer for insulating and separating the external electrode and the internal electrode can be formed.

In a second method of manufacturing a solar cell according to the present invention, a step of preparing a spherical cell having a second conductive type semiconductor layer formed on a spherical substrate surface having a first conductive type semiconductor layer; A step of preparing an electrode plate having an opening corresponding to the arrangement of cells, an edge of the opening being formed in a sawtooth shape, and fitting and fixing a spherical cell to the opening; A step of exposing a part of the first conductivity type semiconductor layer by covering a part of the cell with an etching prevention film and performing etching, a step of forming a conductive substrate having a projection on the surface, Forming an insulating resin member on the portion, and placing and pressing the spherical cell such that the exposed portion of the first conductive semiconductor layer of the spherical cell contacts the insulating resin member. As a result, the exposed portion of the first conductivity type semiconductor layer , Characterized in that it comprises a and a step of electrically connecting the conductive substrate. According to this method, since the edge of the opening of the electrode plate is formed in a saw-tooth shape, even a spherical cell that is not a true sphere (spherical shape or diameter is not constant) can be securely fixed to the electrode plate. Can be.
In addition, by covering a part of the spherical cell with an etching prevention film and performing etching, leakage of the etching agent to the opposite surface of the spherical cell can be prevented. Further, the fixing between the conductive substrate and the spherical cell can be surely performed by bonding by pressing the insulating resin member, and at the same time, an insulating layer for insulating and separating the external electrode and the internal electrode can be formed. further,
Since the edge of the sawtooth-shaped opening penetrates (bites into) the inside of the insulating resin member and is fixed, the electrode plate, the spherical cell, and the conductive substrate can be firmly fixed.

A third method for manufacturing a solar cell according to the present invention is the method for manufacturing a solar cell according to claim 1 or 2,
The step of forming the conductive substrate includes a step of forming an insulating film on the surface of the conductive substrate and a step of forming a projection by punching. According to this method, the inner electrode (conductive substrate) and the outer electrode (electrode plate) can be electrically insulated by forming an insulating film by, for example, pasting a polyimide tape or the like on the conductive substrate. it can.

A fourth method for manufacturing a solar cell according to the present invention is the method for manufacturing a solar cell according to claim 3, wherein the insulating film is formed on the entire surface of the conductive substrate. According to such a method, the inner electrode (conductive substrate) and the outer electrode (electrode plate) can be more reliably electrically insulated.

A fifth method of manufacturing a solar cell according to the present invention is the method of manufacturing a solar cell according to claim 3, wherein the insulating film is formed on a surface of the conductive substrate other than the protrusion. And According to this method, the inner electrode (conductive substrate) and the outer electrode (electrode plate) can be electrically insulated more efficiently.

In a sixth solar cell according to the present invention, a first conductive type semiconductor layer is formed on a sheet-shaped conductive substrate, and
A solar cell in which spherical cells made of a conductive semiconductor layer are spread, wherein a part of the first conductive semiconductor layer inside the spherical cell is exposed, and the exposed portion and the conductive substrate are electrically connected. Electrically connected to the inner electrode, the second conductive semiconductor layer, and an electrode plate having an opening corresponding to the arrangement of the spherical cells and having an edge formed in a sawtooth shape. And an outer electrode formed. According to this configuration, since the edge of the opening is formed in a saw-tooth shape, a solar cell securely fixed to the electrode plate can be used even for a spherical cell that is not a true sphere (spherical shape or diameter is not constant). realizable.

[0013] A seventh solar cell according to the present invention is the solar cell according to claim 6, wherein the conductive substrate, the spherical cell, and the electrode plate are bonded by an insulating resin member. Features. According to this configuration, the conductive substrate and the spherical cell are securely bonded and fixed by the insulating resin member, and the insulating resin member also functions as an insulating layer for insulating and separating the external electrode and the internal electrode. Solar cell can be realized.

An eighth solar cell according to the present invention is the solar cell according to the sixth or seventh aspect, wherein the saw-toothed portion at the edge of the opening is formed upward. According to this configuration, since the edge of the opening is formed in a saw-tooth shape, a solar cell securely fixed to the electrode plate can be used even for a spherical cell that is not a true sphere (spherical shape or diameter is not constant). realizable.

A ninth solar cell according to the present invention is the solar cell according to claim 6 or 7, wherein the saw-toothed portion at the edge of the opening is formed downward, and the saw-toothed portion is formed. It is characterized by being penetrated and fixed inside the insulating resin member. According to this configuration, since the edge of the opening is formed in a saw-tooth shape, even a spherical cell that is not a true sphere (spherical shape and diameter is not fixed) is securely fixed to the electrode plate, and Strong fixation of a plate, a spherical cell, and a conductive substrate can be realized.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a solar cell and a method for manufacturing the solar cell according to the present invention will be described in detail with reference to the accompanying drawings.

(First Embodiment) FIG. 1 shows a first embodiment of the present invention.
FIG. 4 is a perspective view of a main part of the solar cell according to the embodiment of FIG.
FIG. 3 is a schematic cross-sectional view of a part thereof, and FIG. 3 is a perspective view of a main part of an electrode plate serving as an external electrode and a diagram schematically showing an AA cross section. The solar cell according to the first embodiment of the present invention includes a sheet-shaped conductive substrate 17 as shown in FIGS.
An electrode plate 16 on which spherical cells 10 serving as solar cells are spread and provided with openings 18 corresponding to the arrangement of the spherical cells, and edges 18a of the openings 18 are formed in a sawtooth shape, The saw-toothed edge portion 18a is fitted and fixed to the spherical cell 10 so that it faces upward.

The p-type semiconductor layer 1 inside the spherical cell 10
Spherical cell 1 having n-type semiconductor layer 12 (second conductivity type semiconductor layer) forming a pn junction with 1 (first conductivity type semiconductor layer)
0 is pressure-bonded to the conductive substrate 17, and the internal p-type semiconductor layer 11 and the conductive substrate 17 are electrically connected. Thus, the conductive substrate 17 serves as an inner electrode of the solar cell.

The electrode plate 16 (see FIG. 3) in which the edge 18a of the opening 18 is formed in a saw-tooth shape is used for the n-type semiconductor layer 1
2 and is an outer electrode of the solar cell. In addition, the conductive substrate 17 and the spherical cell 10 are bonded and fixed by the insulating resin member 14.

Further, the insulating resin member 14 around the spherical cell 10 and the insulating film 15 made of a polyimide tape or the like affixed on the conductive substrate 17 between the spherical cells 10 form the conductive substrate 17 (inside). Electrode) and opening edge 1
8a is electrically insulated from the electrode plate 16 (outer electrode) formed in a sawtooth shape.

Next, an example of a specific method for manufacturing a solar cell according to an embodiment of the present invention will be described below. First, an example of a method of forming the spherical cell 10 used in the present embodiment will be described. A p-type polycrystalline silicon particle having a diameter of 1 mm is dropped while being heated in a vacuum to form a p-type polycrystalline silicon sphere (p-type semiconductor layer) 11 having good crystallinity.
CV using mixed gas such as silane containing phosphine
According to Method D, n-type polycrystalline silicon layer (n-type semiconductor layer) 1
Form 2 Here, in the CVD process, a thin film is formed by supplying and discharging a gas heated to a desired reaction temperature while conveying a silicon ball in a thin tube.

In this step, the p-type polycrystalline silicon grains are heated in a vacuum and dropped to form a sphere to form a p-type polycrystalline silicon sphere (p-type semiconductor layer) 11. By contact with the gas of
It is also possible to form the type polycrystalline silicon layer (n-type semiconductor layer) 12.

Next, a method of manufacturing a solar cell using the above-described spherical cell 10 will be described with reference to FIGS. FIG. 6 is a schematic cross-sectional view of a step of processing a spherical cell, FIG. 7 is a schematic cross-sectional view of a step of processing a conductive substrate, and FIG. It is a schematic sectional drawing of the process of forming a solar cell.

The process of processing a spherical cell will be described with reference to FIG. First, a tray T having a depression provided for arranging spherical cells at equal intervals in the vertical and horizontal directions is prepared. FIG. 6A is a schematic sectional view of the tray T.

Next, as shown in FIG. 6B, the spherical cell 10 is placed in the recess of the tray T.

Next, as shown in FIG. 6C, the fixing member 13 made of a brazing agent (for example, electron wax such as paraffin) is heated to a melting temperature (100 in case of paraffin) so that the spherical cell 10 is filled. (200 ° C. to 200 ° C.), melted and poured, and the temperature is lowered to cure.

Next, as shown in FIG. 6D, the spherical cell 10 fixed by the fixing member 13 is taken out of the tray T and turned upside down.

Next, as shown in FIG. 6E, the portion of the spherical cell 10 not covered by the fixing member 13 is etched or the like to remove the n-type semiconductor layer 12 on the surface. The internal p-type semiconductor layer 11 is exposed. Alternatively, a portion not covered with the fixing member 13 may be ground by grinding or the like to expose the internal p-type semiconductor layer 11.

Next, a process of processing a substrate will be described with reference to FIG. First, as shown in FIG. 7A, a conductive substrate 17 made of an aluminum sheet or the like is prepared.

Next, as shown in FIG. 7B, an insulating film 15 is formed on the conductive substrate 17 (for example, a polyimide tape is applied). As shown in the figure, the insulating film 15 is formed by punching a portion where a through hole is to be provided in a later step with a punch or the like in advance, but is attached so as to cover the entire surface of the conductive substrate 17 without making a hole. Is also good.

Next, as shown in FIG. 7C, a through hole 17a having a spike-like projection 17b is formed in the conductive substrate 17 by using a punch or the like.

Next, as shown in FIG. 7D, the insulating resin member 14 (for example,
Epoxy resin).

In the step of FIG. 7C,
The through hole 17a does not necessarily have to be opened. In this case, the projection 17c may not be in a spike shape but may be in a convex shape as shown in FIG. Then, an appropriate amount of the insulating resin member 14 (for example, epoxy resin) is applied onto the protruding protrusion 17c (FIG. 7F), and the through-hole 17a is formed.
As in the case where there is, it can be manufactured by the subsequent steps.

Next, a process of mounting the processed spherical cell on the processed conductive substrate will be described with reference to FIG. First, as shown in FIG. 8 (a), a spherical cell (FIG. 6 (c)) processed as described above is placed on a conductive substrate (FIG. 7 (d)) processed as described above. The exposed p-type semiconductor layer 11 is in contact with the insulating resin member 14 and is positioned and mounted so that the center of the spherical cell 10 matches the center of the through hole.

Next, in the state of FIG. 8 (a), it is heated to about 150 ° C., and is pressurized from above using a press device or the like for about 1 hour to obtain the state of FIG. 8 (b). Then, the insulating resin member 14 is cured while being pressed. At this time, sintering (sintering) can be performed in combination.
In this case, the heating temperature is preferably 200 ° C. to 300 ° C., and the pressing time is preferably 30 minutes to 1 hour.

Next, the pressure is released, and the fixing member 13 is removed using heat or a chemical (for example, acetone), and the state shown in FIG. 8C is obtained.

Next, as shown in FIG. 3A, an electrode plate (for example, a metal sheet of aluminum or the like) 16 provided with an opening 18 in accordance with the arrangement of the spherical cells 10 is prepared. The electrode plate 16 has an opening 18 at its edge 18a.
Are formed by punching with a punch or the like so as to have a sawtooth shape. FIG. 3B schematically shows the AA cross section. After the opening 18 of the electrode plate 16 is positioned on the spherical cell 10, the opening 18 of the electrode plate 16 is fitted and fixed from above the spherical cell 10. At this time, the projection of the saw-toothed edge portion 18a faces upward. Thus, the state shown in FIG. 8D is obtained.

(Second Embodiment) FIG. 2 shows a second embodiment of the present invention.
FIG. 5 is a perspective view of a main part of the solar cell according to the embodiment, and FIG.
FIG. 3 is a schematic cross-sectional view of a part thereof, and FIG. 3 is a perspective view of a main part of an electrode plate serving as an external electrode and a diagram schematically showing an AA cross section. The solar cell according to the second embodiment of the present invention has a sheet-like conductive substrate 17 as shown in FIGS.
A spherical cell 10 serving as a solar cell is spread over the electrode plate 16 in which an edge 18a of an opening 18 is formed in a sawtooth shape, and a spherical cell 10 is formed such that the sawtooth edge 18a faces downward. 10 and fixed.

The p-type semiconductor layer 1 inside the spherical cell 10
Spherical cell 1 having n-type semiconductor layer 12 (second conductivity type semiconductor layer) forming a pn junction with 1 (first conductivity type semiconductor layer)
0 is pressure-bonded to the conductive substrate 17, and the internal p-type semiconductor layer 11 and the conductive substrate 17 are electrically connected. Thus, the conductive substrate 17 serves as an inner electrode of the solar cell.

The electrode plate 16 (see FIG. 3) in which the edge 18a of the opening 18 is formed in a saw-tooth shape is used for the n-type semiconductor layer 1.
2 and is an outer electrode of the solar cell. Also, the conductive substrate 17, the spherical cell 10, and the electrode plate 16
Are bonded and fixed by the insulating resin member 14. Further, the saw-toothed edge portion 18 a of the electrode plate 16 penetrates (bits into) the inside of the insulating resin member 14 and is fixed.

Further, an insulating resin member 14 around the spherical cell 10 and an insulating film 15 made of polyimide tape or the like affixed on the conductive substrate 17 between the spherical cells 10 form the conductive substrate 17 (inside). Electrode) and an electrode plate 16 (outer electrode) in which the edge 18a of the opening 18 is formed in a saw-tooth shape.
And are electrically insulated.

Next, a specific method for manufacturing a solar cell according to the second embodiment of the present invention will be described below. First, the spherical cell 10 used in the present embodiment is formed in the same manner as in the first embodiment.

Next, a method of manufacturing a solar cell using the above-described spherical cell 10 will be described with reference to FIG. FIG. 9 is a schematic cross-sectional view illustrating steps of a method for manufacturing a solar cell according to the second embodiment of the present invention.

Next, as in the first embodiment, FIG.
(A), an electrode plate (for example, a metal sheet of aluminum or the like) 16 provided with openings in accordance with the arrangement of the spherical cells is prepared. This electrode plate has an opening 18.
Is punched out with a punch or the like so that the edge 18a has a saw-tooth shape. FIG. 3B shows the A-
The A section is shown typically. After the opening 18 of the electrode plate 16 is positioned on the spherical cell 10, the spherical cell 10
Is fixed from above the opening 18 of the electrode plate 16.
Alternatively, the spherical cell 10 is previously arranged so as to match the arrangement of the opening 18 of the electrode plate 1, the electrode plate 1 is fitted from above, the spherical cell 10 is fixed, and the spherical cell 10 is turned upside down. In this way, as shown in FIG. 9A, the projection of the saw-toothed edge portion 18a is in a state of projecting downward.

Next, as shown in FIG. 9B, an etching prevention film 19 such as a thermoplastic back coat resin is applied to the spherical cell surface on the upper surface of the fitted electrode plate.

Next, as shown in FIG. 9C, etching is performed to remove the portion of the n-type semiconductor layer 12 that is not covered with the etching prevention film 19, and to remove the internal p-type semiconductor layer 11. Expose.

Next, as shown in FIG. 9D, the etching prevention film 19 is removed by heat and a solution.

Next, as shown in FIG. 9E, the conductive substrate 17 was processed in the same manner as in the first embodiment (the step of processing the conductive substrate of FIG. 4). The p-type semiconductor layer 11 exposing the spherical cell processed as described above is in contact with the insulating resin member 14, and is positioned and mounted so that the center of the spherical cell 10 matches the center of the through hole.

Next, in the state of FIG. 9 (e), it is heated to about 150 ° C., and is pressed from above by using a press device or the like for about 1 hour to obtain the state of FIG. 9 (f). Then, the insulating resin member 14 is cured while being pressed. At this time, sintering (sintering) can be performed in combination.
In this case, the heating temperature is preferably 200 ° C. to 300 ° C., and the pressing time is preferably 30 minutes to 1 hour.

In each of the above embodiments, the first conductivity type has been described as p-type and the second conductivity type has been described as n-type. However, the first conductivity type has been described as n-type, and the second conductivity type has been described as p-type. Can be similarly manufactured. Although a spherical cell using a p-type polycrystal as a spherical substrate is used, a p-type single crystal or p-type amorphous silicon may be used.

Further, in each of the above-described embodiments, a thin transparent conductive film (for example, ITO) may be deposited on the outside of the electrode plate 16 by a sputtering method or the like. Furthermore, by a sputtering method or the like outside the transparent conductive film,
An anti-reflection film may be formed.

[0052]

As described above in detail, according to the method for manufacturing a solar cell and the solar cell according to the present invention, since the edge of the opening is formed in a saw-tooth shape, the opening is not a true sphere (spherical or spherical). Even a spherical cell (of which the diameter is not constant) can be reliably fixed to the electrode plate, a low resistance and stabilization of the joint can be realized, and a high output solar cell can be manufactured. In addition, by covering a part of the spherical cell with an etching prevention film and performing etching, leakage of the etching agent to the opposite surface of the spherical cell can be prevented. Further, since the fixing between the conductive substrate and the spherical cell can be reliably fixed by bonding by pressing the insulating resin member, and at the same time, an insulating layer for insulating and separating the external electrode and the internal electrode can be formed. Stable high-density mounting of the spherical cells can be realized, and the reliability of the solar cell can be improved. In addition, since all members except for the spherical cell part can be formed of thin members, a sheet-shaped solar cell having a high degree of freedom in workability can be manufactured.

[Brief description of the drawings]

FIG. 1 is a perspective view of a main part of a solar cell according to a first embodiment of the present invention.

FIG. 2 is a perspective view of a main part of a solar cell according to a second embodiment of the present invention.

FIG. 3 is a perspective view of a main part of an electrode plate serving as an external electrode according to the present invention and a view schematically showing a cross section taken along line AA.

FIG. 4 is a schematic cross-sectional view illustrating a solar cell according to the first embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view illustrating a solar cell according to a second embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view illustrating a processing step of a spherical cell in the method of manufacturing a solar cell according to the first embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view of a step of processing a conductive substrate in the method for manufacturing a solar cell according to the first embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view of a step of mounting a processed spherical cell on a processed conductive substrate and forming a solar cell in the method for manufacturing a solar cell according to the first embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view illustrating steps of a method for manufacturing a solar cell according to the second embodiment of the present invention.

FIG. 10 is a schematic sectional view illustrating a conventional solar cell.

[Explanation of symbols]

 Reference Signs List 10 spherical cell 11 first conductivity type (p-type) semiconductor layer 12 second conductivity type (n-type) semiconductor layer 13 fixing member 14 insulating resin member 15 insulating film 16 electrode plate 17 conductive substrate 17a through hole 17b spike portion 18 Opening 18a Edge 19 Etch prevention film

 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Keisuke Kimoto Inventor 2-10-1 Komine, Yawatanishi-ku, Kitakyushu-shi, Fukuoka F-term in Mitsui High-Tech Co., Ltd. 5F051 AA02 AA03 BA11 CB21 FA13 FA15 FA16 FA17 FA30 GA01 GA20

Claims (9)

[Claims] 1. A step of preparing a spherical cell in which a second conductive type semiconductor layer is formed on a surface of a spherical substrate having a first conductive type semiconductor layer such that a part of the first conductive type semiconductor layer is exposed. Forming a conductive substrate having a projection on the surface; forming an insulating resin member on the projection; and exposing the exposed portion of the first conductivity type semiconductor layer of the spherical cell to the insulation. Placing the spherical cell in contact with the conductive resin member and applying pressure to electrically connect the exposed portion of the first conductivity type semiconductor layer to the conductive substrate; and An electrode plate having an opening corresponding to the cell arrangement is provided, and an edge of the opening is formed in a saw-tooth shape, and the opening is fitted and fixed in a spherical cell, and the second conductive plate is fixed. Electrically connecting to the mold semiconductor layer. Method of manufacturing a solar cell. 2. A process for preparing a spherical cell having a second conductive type semiconductor layer formed on a surface of a spherical substrate having a first conductive type semiconductor layer, and an opening adapted to the arrangement of the spherical cell. Preparing an electrode plate in which the edge of the opening is formed in a saw-tooth shape, fitting and fixing a spherical cell to the opening, and covering a part of the spherical cell with an etching prevention film; A step of exposing a portion of the first conductivity type semiconductor layer by performing etching; a step of forming a conductive substrate having a projection on the surface; and a step of forming an insulating resin member on the projection. And placing the spherical cell such that the exposed portion of the first conductive type semiconductor layer of the spherical cell is in contact with the insulating resin member and applying pressure to expose the first conductive type semiconductor layer. Electrical connection between the contacted portion and the conductive substrate. Method of manufacturing a solar cell which comprises a step of, the. 3. The method for manufacturing a solar cell according to claim 1, wherein the step of forming the conductive substrate includes forming an insulating film on a surface of the conductive substrate, and forming a protrusion by punching. And a method for producing a solar cell. 4. The method for manufacturing a solar cell according to claim 3, wherein the insulating film is formed on the entire surface of the conductive substrate. 5. The method for manufacturing a solar cell according to claim 3, wherein the insulating film is formed on a surface of the conductive substrate other than the protrusion. 6. A sheet-like conductive substrate having a first inside.
A solar cell in which a spherical semiconductor cell having a conductive type semiconductor layer and a surface of a second conductive type semiconductor layer is spread, a part of the first conductive type semiconductor layer inside the spherical cell is exposed, and the exposed portion and the conductive layer are exposed. An inner electrode electrically connected to the conductive substrate, the second conductivity type semiconductor layer, and an opening corresponding to the arrangement of the spherical cells, and the edge of the opening is formed in a sawtooth shape. A solar cell, comprising: an electrode plate; and an outer electrode electrically connected. 7. The solar cell according to claim 6, wherein the conductive substrate, the spherical cell, and the electrode plate are bonded by an insulating resin member. 8. The solar cell according to claim 6, wherein the saw-toothed portion at the edge of the opening is formed upward. 9. The solar cell according to claim 6, wherein a saw-tooth portion at an edge of the opening is formed downward, and the saw-tooth portion penetrates into the insulating resin member. A solar cell characterized in that it is fixed.