JP2002001100A - Plasma treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus wherein the exchange of a vacuum chamber can be facilitated. SOLUTION: The vacuum chamber 1 is divided into two chambers, and gas passage 3 extending from the lower chamber 12 to the upper chamber 4 is formed in the side wall. The surface where the chamber 12 and the chamber 4 join to each other is sealed with an O ring. According to this structure, for example, the position of a nozzle 22 can be easily changed by merely exchanging upper chamber 4 for another.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention
(Chemical Vapor Deposition) equipment and RIE (Reactiv
The present invention relates to a structure of a vacuum chamber used for an e-ion etching (e-Ion Etching) apparatus and the like, and particularly to a plasma processing apparatus capable of easily replacing a vacuum chamber.

[0002]

2. Description of the Related Art FIG. 14 is a sectional view showing an example of a conventional plasma CVD apparatus. FIG. 15 is an explanatory diagram of the plasma CVD apparatus shown in FIG. This plasma CVD
The apparatus 900 has a configuration in which a substrate support table 902 is installed in a cylindrical vacuum chamber 901, and an upper lid 903 is provided on the substrate support table 902. A horizontal magnetic field coil 904 for generating a horizontal magnetic field in the vacuum chamber 901 is arranged around the vacuum chamber 901. Also, the upper lid 90
A high frequency antenna 905 that excites plasma is installed on the upper part of 3.

An annular gas pipe 906 is provided around the vacuum chamber 901.
A plurality of introduction pipes 907 extend in the inner diameter direction. The introduction pipe 907 is connected to a nozzle 908 provided on a side wall of the vacuum chamber 901. The gas pipe 906 is connected to a gas supply system (not shown). When a film is formed on a substrate by the plasma CVD apparatus 900, the inside of the vacuum chamber is evacuated, and then a gas pipe 906, an inlet pipe 907, and a nozzle 9
08, a source gas is supplied into the vacuum chamber 901.

[0004] When a high frequency is applied to the high frequency antenna 905 in this state, the source gas is excited and plasma P is generated. Further, a horizontal magnetic field is generated in the vacuum chamber 901 by the horizontal magnetic field coil 904 to confine the generated plasma P. When a predetermined bias is applied to the substrate support 902, the charged particles are transported to the substrate surface. On the substrate surface, the charged particles promote a chemical reaction.

[0005]

In the above-mentioned plasma CVD apparatus 900, when it is necessary to change the position of the nozzle 908 or change the volume of the vacuum chamber 901 depending on the film forming conditions, it is prepared separately from the vacuum chamber 901. The vacuum chamber 901 of a different size is completely replaced as it is. However, when the entire vacuum chamber 901 is replaced, there is a problem that the operation becomes large. Further, since it is necessary to remove the gas pipe 906 attached to the vacuum chamber 901, there is a problem that it takes time to disassemble at the time of replacement.

Accordingly, the present invention has been made in view of the above, and an object of the present invention is to provide a plasma processing apparatus capable of easily performing a vacuum chamber replacement operation.

[0007]

According to a first aspect of the present invention, there is provided a plasma processing apparatus comprising: a cylindrical vacuum chamber having a plasma generation region therein; And the lower chamber are stacked to form the vacuum chamber with a joining surface, and an annular gas passage is formed in the side wall of the lowermost chamber and in the circumferential direction thereof. A gas passage is formed, the gas passage constitutes a nozzle extending from the lower chamber to the upper chamber through the joint surface, and an end thereof is directed to a plasma generation region in the upper chamber, and further introduces gas into the annular gas passage. And a gate passage connected to an external gas system for supplying a raw material gas, and a ring-shaped around the gas passage on the joint surface. It was subjected to seal.

In this plasma processing apparatus, the raw material gas supplied from the gas system enters through the gate passage of the lower chamber and reaches the inside of the annular gas passage. Subsequently, the raw material gas passes through a gas passage formed upward from the annular gas passage and is discharged into the upper chamber via a nozzle. Even when the gas passes through the gas passage on the joint surface between the upper chamber and the lower chamber, the gas does not leak because the joint surface is sealed. Note that an O-ring or a metal gasket can be used for the seal. The seal is
The upper chamber may be sealed by its own weight, or may be pressurized by a bolt or the like.

[0009] The upper chamber can be separated from the lower chamber. Here, since only the relative positional relationship between the upper chamber and the lower chamber is described, the vacuum chamber may be divided into three or more. However, the annular gas passage is provided in the lowermost chamber. This is because, if provided in the upper chamber, it takes time to disassemble the gas pipe and the like. On the other hand, the upper chamber in which the nozzle is provided is not necessarily the uppermost chamber.

By removing this upper chamber, another upper chamber can be attached. Even if the upper chamber is replaced, the gas passage from the lower chamber and the gas passage of the replaced upper chamber are connected in a sealed state. Raw material gas can be supplied. In addition, if the vacuum chamber is cylindrical,
The cross section may be not only circular but also square. This plasma processing apparatus includes a plasma CVD apparatus and an RIE apparatus.

According to a second aspect of the present invention, in the plasma processing apparatus, a cylindrical vacuum chamber having a plasma generation region therein is vertically divided, and the upper chamber and the lower chamber are stacked and joined to form a vacuum chamber. And an annular gas pipe is provided around the lowermost chamber, and a pipe is connected to the annular gas pipe from each of the gate passages radially provided in the lowermost chamber, and a gas passage is formed from each of the gate passages. Constitutes a nozzle from the lower chamber to the upper chamber through the bonding surface and the end of which faces the plasma generation region in the upper chamber,
Further, a gas system for introducing a gas into the annular gas pipe and supplying a raw material gas is connected to the outside, and a ring-shaped seal is provided around a gas passage on the joint surface.

This plasma processing apparatus has a configuration in which a pipe is provided around a conventional vacuum chamber and the vacuum chamber has a divided structure, and the same pipe as described above is passed through the inside. According to such a configuration, it is not necessary to form an annular gas passage in the lowermost chamber, and therefore, it can be easily manufactured. Further, by forming the vacuum chamber in a divided structure, the same effect as described above can be obtained.

According to a third aspect of the present invention, in the above-mentioned plasma processing apparatus, an O-ring is used for the seal and a plurality of O-rings are provided. A seal is provided on the joint surface between the upper chamber and the lower chamber to keep the gas passage airtight. To ensure reliable airtightness by using an O-ring for this seal and using a multi-stage structure Can be. For example, by making the O-ring a double configuration, it is possible to effectively prevent leakage at the joint surface.

According to a fourth aspect of the present invention, in the plasma processing apparatus, a projection is provided at a lower end of the upper chamber other than the gas passage, and the projection is provided at an upper end of the lower chamber. Is provided with a stepped portion that engages with.

By providing a projection at the lower end of the upper chamber, it is possible to prevent the gas passage from being grounded when the upper chamber is removed and placed on the floor. Thereby, it is possible to prevent the state of the sealing surface from being deteriorated. Although not essential for the protection of the sealing surface, by engaging the protrusion of the lower chamber with the step,
Positioning when stacked can be easily performed.

According to a fifth aspect of the present invention, there is provided the plasma processing apparatus according to the above-mentioned plasma processing apparatus, further comprising: a substrate support in the vacuum chamber; The above-mentioned vacuum chamber is divided.

The plasma is generated at a position above the mounting surface of the substrate support. For this reason, since the source gas mainly adheres to the inner wall of the chamber located on the substrate support, it is convenient if the vacuum chamber can be separated at the portion where the material gas adheres. Therefore, in this plasma processing apparatus, the vacuum chamber is divided near the mounting surface of the substrate support table so that the upper chamber can be removed for cleaning.

According to a sixth aspect of the present invention, in the above plasma processing apparatus, an upper lid is further provided in the upper chamber, and a gas passage formed in the upper chamber is passed through a joint surface between the upper lid and the upper chamber. A nozzle formed at the end of this gas passage toward the plasma generation region in the vacuum chamber, and a ring-shaped seal is provided around the gas passage at the joint surface between the upper lid and the upper chamber. It is.

That is, if the gas passage is formed to the upper lid, the source gas can be injected from the lower surface of the upper lid. The number of nozzles is 1 for one gas passage.
Not limited to one. When the number of nozzles is increased, it becomes possible to uniformly inject the source gas. The joint surface between the upper lid and the upper chamber is kept airtight by a seal, as described above. The attachment / detachment replacement of the upper lid can be easily performed as described above.

Further, in the plasma processing apparatus according to the third aspect, a cylindrical vacuum chamber having a plasma generation region therein is vertically divided, an upper chamber and a lower chamber are stacked, and the vacuum chamber is formed with a joint surface. In addition to the configuration, a pipe is connected from an external gas system to a gate passage radially provided in the lowermost chamber, and the gas passage from the gate passage reaches the upper chamber through the joint surface from the lower chamber, and further, the uppermost chamber An upper lid is provided, and the gas passage extends from the upper chamber to the upper lid through the bonding surface, and the upper lid is provided with a plurality of nozzles dispersed toward a plasma generation region in the upper chamber, and these nozzles are provided with a source gas. Is formed around the gas passage at the joint surface. It was subjected to seal.

In this configuration, the source gas is introduced from the lower chamber, and the source gas is once introduced to the upper lid through the lower chamber and the upper chamber. And
The raw material gas is transported to a plurality of nozzles provided in the upper lid by an upper lid gas passage formed in the upper lid, and injected into a vacuum chamber. It is to be noted that the nozzles are provided in a dispersed manner so that the processing of the substrate can be performed uniformly.
With such a configuration, the number of gas passages in the chamber can be reduced, so that the manufacture of the vacuum chamber is simplified.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings. The present invention is not limited by the embodiment.

(First Embodiment) FIG. 1 is a schematic configuration diagram showing a plasma CVD apparatus according to a first embodiment of the present invention. FIG. 2 is a partial sectional view of the plasma CVD apparatus shown in FIG. FIG. 3 shows the plasma CVD shown in FIG.
It is an assembly drawing of an apparatus. This plasma CVD apparatus 100
Has a configuration in which a cylindrical vacuum chamber 1 made of aluminum or stainless steel is divided into two parts, and a substrate support base 2 is provided in the vacuum chamber 1. Also,
In the vacuum chamber 1, three gas passages 3 are formed. A horizontal magnetic field coil 5 is disposed around the upper chamber 4. The upper chamber 4 is provided with a sintered upper cover 6 made of alumina. A high frequency antenna 7 is provided on the upper surface of the upper lid 6. The high-frequency antenna 7 includes a matching unit 8
Is connected to the RF power supply 9 via the.

On the other hand, a matching device 10 is
Is connected to the bias low-frequency power supply 11. The lower chamber 12 is provided with an exhaust pipe 13 connected to a vacuum exhaust system. The exhaust pipe 13 is provided with an automatic pressure control valve 14. In addition, the substrate support 2 is provided with a heater and an electrostatic chuck (not shown). In the lower chamber 12, as shown in FIG.
A gate passage 20 for introducing a gas from an external gas supply system is formed. The gas passage 3 is connected to the upper chamber 4
It passes through a joint surface 21 between the upper chamber 4 and the lower chamber 12 to reach a nozzle 22 opened toward the inside of the upper chamber 4. The upper chamber 4 has a jacket structure for circulating high-temperature refrigerant, and this jacket is formed on the back or front surface of the nozzle 22 (not shown). When it is formed on the front surface of the nozzle, a part of the nozzle 22 is formed into a tube so as to pass through the jacket (not shown).

As shown in FIG. 2 and FIG.
Surface 2 between upper chamber 4 and lower chamber 12
1 is provided with an O-ring 23. O-ring 23
Since the ambient temperature rises to about 120 to 150 ° C., a heat-resistant material is used. The O-ring 23 is incorporated in an annular O-ring groove 24 provided on the upper surface of the lower chamber 12. The lower end of the upper chamber 4 has a protrusion 2
5 is formed, and a step 26 is formed at the upper end of the lower chamber 12.
Are formed. When the upper chamber 4 is placed on the lower chamber 12, the projection 25 and the step 26 are engaged with each other to fix their positions. Further, the O-ring 23 is crushed by the weight of the upper chamber 4 and performs a sealing function. Note that a metal gasket may be used instead of the O-ring 23 (not shown). The protruding portion 25 prevents the sealing surface 27 from coming into contact with the floor surface when the upper chamber 4 is removed and placed on the floor surface. For this reason, it is possible to prevent a decrease in the sealing function.

An annular gas pipe 28 is formed in the lower chamber 12 along the circumferential direction of the cylinder. The annular gas pipe 28 is formed by temporarily dividing the lower chamber 12 into two parts, machining the gas pipe 28 and the gate passage 20, and then welding the divided pieces again. TIG welding or MIG welding is used for welding. A pipe 29 for receiving a source gas from an external gas supply system is connected to an entrance of the gate passage 20.

The raw material gas supplied from the gas supply section enters the annular gas pipe 28 from the gate passage 20 and rises through the plurality of gas pipes 3 extending upward from the gas pipe 28. Here, the joint surface 21 between the lower chamber 12 and the upper chamber 4 is kept airtight by an O-ring 23. For this reason, the raw material gas is transported from the lower chamber 12 to the upper chamber 4 without leakage, and is injected from the nozzle 22 into the vacuum chamber 1.

Next, when replacing the upper chamber 4, the upper lid 6 is removed as shown in FIG. 4A, and the upper chamber 4 is lifted as it is as shown in FIG. I just need. Next, as shown in FIG. 2C, another upper chamber 4 having the same configuration at the lower end.
and carried on the lower chamber 12. For example, the upper chamber 4s has a low height, and the position of the nozzle 22 is lower than that before replacement. The O-ring 23 is crushed by the weight of the upper chamber 4s, and airtightness is maintained between the upper chamber 4s and the lower chamber 12.

The dividing position of the vacuum chamber 1 is a position slightly below the substrate support 2. This is because the components of the raw material gas adhere to the inner wall of the upper chamber 4 because the plasma is generated above the substrate support 2. If the dividing position is slightly lower than the upper surface of the substrate support 2 in this manner, only the upper chamber 4 needs to be removed and mechanical cleaning can be performed, so that maintenance can be easily performed.

Next, the O-ring 23 may have a double O-ring structure. FIG. 5A shows a partial assembly view,
(B) shows a cross-sectional view. Thus, the lower chamber 1
The O-ring grooves 24 and 30 are formed in a double ring shape on the second joint surface 21, and two O-rings 23 and 31 having different diameters are fitted into the respective O-ring grooves 24 and 30. In this way, the gas tightness of the gas passage 3 can be sufficiently improved. Further, of the gas passages 3 shown in FIG. 3, only the gas passage 3 of the raw material gas which is not preferable to leak may have a double O-ring structure.

FIG. 6 is a partial sectional view showing a modification of the gas passage. In the above-described embodiment, one gas passage 3 is provided in the radial direction of the vacuum chamber 1. However, when the number of gas systems increases, as shown in the drawing, three gas passages 3a to 3c are provided in the radial direction. May be formed. Joint surface 2
1, the circumference of each gas passage 3a to 3c is O
Sealing is performed with the ring 23. In addition, the annular gas passage 28
When three a to 28c are formed in the radial direction, the gate passages 20a to 20c leading to the gas passages 3a to 3c are formed at different heights as shown in FIG. It is formed so as to be shifted (not shown). When the annular gas passages 3a to 3c are provided in a triple ring shape, the outer peripheral portions are joined by welding, but the gas passages 3a to 3c are formed.
It is preferable to provide a seal between O to 3c by an O-ring 32.

As described above, according to the plasma CVD apparatus 100, since the vacuum chamber 1 has a divided structure and the gas passage 3 is formed in the side wall of the vacuum chamber 1, the position of the nozzle 22 can be changed by replacing the upper chamber 4. Since the volume of the vacuum chamber 1 can be adjusted and the lower chamber 12 is kept as it is, the pipe 29 from the gas supply system
There is no need to disassemble. For this reason, the replacement operation of the vacuum chamber 1 can be easily performed.

(Embodiment 2) FIG. 7 is a sectional view showing a plasma CVD apparatus according to Embodiment 2 of the present invention. FIG. 8 is a partial cross-sectional view of the plasma CVD apparatus shown in FIG. FIG. 9 is a plan view of the upper lid shown in FIG. This plasma CVD apparatus 200 has substantially the same configuration as the plasma CVD apparatus 100 shown in FIG. 1 except that the gas passage 3 extends to the upper lid 6. The other configuration is the same as that of the first embodiment, and the description thereof is omitted. An O-ring groove 201 is formed at the upper end of the upper chamber 4. An O-ring 202 similar to the above is fitted into the O-ring groove 201. Further, a protruding portion 203 is formed on the periphery of the upper lid 6. At the upper end of the upper chamber 4, there is formed a step portion 204 which engages with the protruding portion 203.

The upper lid 6 is positioned with respect to the upper chamber 4 by the engagement between the projecting portion 203 and the step portion 204. Also, by placing the upper lid 6 on the upper chamber 4, the O-ring 2
02 is collapsed, and the airtightness of the gas passage 3 is maintained. As shown in FIG. 9, the gas passages 205 formed in the upper lid 6 are formed radially, and each of the gas passages 205 is provided with a plurality of nozzles 206. By uniformly disposing the nozzles 206, film formation can be performed uniformly. When the upper lid 6 is made of metal, the gas passage 205 is formed by machining. In the case of alumina, it may be formed by putting a core into a portion to be the gas passage 205 and taking it out after sintering.

The raw material gas is supplied from the gas supply system and reaches the annular gas passage 28 via the gate passage 20. Subsequently, the gas passes through the gas passage 3 extending upward from the gas passage 28 to reach the gas passage 205 of the upper lid 6, and the plurality of nozzles 2
From step 06, the source gas is jetted into the vacuum chamber 1. At this time, the upper lid 6, upper chamber 4, lower chamber 1
2, the O-ring 23,
Since the airtightness is maintained by 202, the source gas does not leak.

The upper lid 6 can be replaced similarly to the upper chamber 4. For example, by exchanging the upper lid 6 with a different arrangement pattern of the nozzles 206, it is possible to adjust the ejection form of the source gas. In addition, the replacement operation itself is possible only by lifting and replacing the upper lid 6, and by simply placing a new upper lid 6 on the upper chamber 4, the gas passages 3 and 20 are replaced.
5 airtightness can be ensured. Note that it is also possible to adopt a double O-ring configuration as described above. Although only one gas system is shown in FIG. 7, the present invention is not limited to this, and a plurality of gas systems may be provided.

(Embodiment 3) FIG. 10 is a sectional view showing a plasma CVD apparatus according to Embodiment 3 of the present invention. This plasma CVD apparatus 300 is similar to that of the first embodiment.
Has substantially the same configuration as the plasma CVD apparatus 100 of
The present embodiment is characterized in that an annular gas pipe 301 as used in a conventional plasma CVD apparatus is used instead of the annular gas passage 28. That is, an annular gas pipe 301 is provided around the lower chamber 12, and the gas pipe 301 is provided with the gate passage 20 of the lower chamber 12.
The pipe 302 radially extending from the pipe 302 is connected. An external gas supply system is connected to the annular gas pipe 301. The other configuration is the same as that of the first embodiment, and the description thereof is omitted.

According to the plasma CVD apparatus 300 having such a configuration, the annular gas passage 28 is formed in the lower chamber 12.
Since there is no need to process and form, the manufacturing is simple. Note that the above-described configuration can also be used in the case where the nozzle 206 is provided on the upper lid 6 described in the second embodiment (not shown).

(Embodiment 4) FIG. 11 is a sectional view showing a plasma CVD apparatus according to Embodiment 4 of the present invention. The plasma CVD apparatus 400 has a configuration in which a plurality of nozzles 401 are provided on the upper lid 6 and the number of gas passages 3 in the side wall of the vacuum chamber 1 is small, for example, one for each gas system. The other configuration is the same as that of the second embodiment.
The description is omitted here. Lower chamber 12
The raw material gas introduced from the gate passage 20 passes through the gas passage 3 extending upward from the gate passage 20 and reaches the gate passage 402 of the upper lid 6. In this configuration, since the gate passage 20 is directly connected to the gate passage 402, the annular gas passage 28 in the lower chamber 12 is unnecessary.

FIG. 12 is a plan view of the upper lid shown in FIG. The gas passages 403 of the upper lid 6 are formed radially from a central portion 404 connected to the gate passages 402, and the gas passages 403 are provided with nozzles 401 at predetermined intervals. Note that the hole diameter of the nozzle 401 is preferably reduced toward the center. This is to make the source gas injected into the vacuum chamber 1 uniform. According to this configuration, since the source gas can be uniformly ejected from the upper lid 6, the film can be uniformly formed. Further, the gas passage 3 formed in the vacuum chamber 1 is simplified.

(Embodiment 5) FIG. 13 is a sectional view showing a plasma CVD apparatus according to Embodiment 5 of the present invention. This plasma CVD apparatus 500 has a three-piece structure of an upper chamber 501, a middle chamber 502, and a lower chamber 503. An upper lid 6 is attached to the upper chamber 501. A high-frequency antenna 7 is provided above the upper lid 6.
Are connected to a high-frequency power supply 9 via a matching unit 8.
A horizontal magnetic field coil 5 for generating a horizontal magnetic field is arranged around the upper chamber 501 and the middle chamber 502. The substrate support 2 is installed in the vacuum chamber 510, and a bias low-frequency power supply 11 is connected to the substrate support 2 via the matching device 10.

Upper chamber 501 and middle chamber 5
A gas passage 506 passes through a joint surface 504 between the gas chamber 50 and the second chamber 503 and a joint surface 505 between the middle chamber 502 and the lower chamber 503.
The periphery of 6 is sealed by an O-ring 23. The gate passage 20 is formed in the lower chamber 503. Further, an annular gas passage 28 is formed in the side wall of the lower chamber 503. This gas passage 28
Is formed by the same method as in the first embodiment. The gas passage 506 extending upward from the annular gas passage 28 includes:
Nozzles 507 and 508 are formed at the ends. The nozzles 507 and 508 are provided in the middle chamber 502 and the upper chamber 501.

In the plasma CVD apparatus 500 having this configuration, the middle chamber 502 or the upper chamber 501
Can be easily replaced. Further, by using only the middle chamber 502, the volume of the vacuum chamber 510 can be reduced. Further, in the fifth embodiment, the example in which the vacuum chamber 510 is divided into three is described. However, the vacuum chamber 510 can be divided into four or more. Further, the upper lid 6 as described in the second embodiment can be used.

Other Embodiments In the first to fifth embodiments, a plasma CVD apparatus has been described as an example. However, an etching apparatus having a gas supply system for introducing a source gas, a vacuum chamber, and the like. The configuration of the present invention can be applied to a sputtering apparatus or the like.

[0045]

As described above, in the plasma processing apparatus of the present invention (claim 1), a cylindrical vacuum chamber having a plasma generation region therein is vertically divided into an upper chamber and a lower chamber. The vacuum chamber is formed with the joining surfaces stacked together, and an annular gas passage is formed in the side wall of the lowermost chamber and in a circumferential direction thereof, and a plurality of gas passages are formed above the annular gas passage. The gas passage from the lower chamber to the upper chamber through the bonding surface to the upper chamber, constitutes a nozzle whose end is directed to the plasma generation region in the upper chamber, further introduces gas into the annular gas passage and simultaneously feeds the raw material gas. It has a gate passage connected to the external gas system to be supplied, and a ring-shaped seal is provided around the gas passage at the joint surface In, it can be easily performed replacement of the vacuum chamber.

In the plasma processing apparatus of the present invention (claim 2), a cylindrical vacuum chamber having a plasma generation region therein is vertically divided, and the upper chamber and the lower chamber are stacked and joined together. Along with forming the vacuum chamber, an annular gas pipe is provided around the lowermost chamber, and pipes are connected to the annular gas pipe from each of the gate passages radially provided in the lowermost chamber, and each of the gate passages is provided. A gas passage extends from the lower chamber to the upper chamber through the bonding surface to the upper chamber, and an end thereof is directed to a plasma generation region in the upper chamber. Further, a gas is introduced into the annular gas pipe and a source gas is supplied. The gas system was connected to the outside, and a ring-shaped seal was provided around the gas passage on the joint surface. For this reason, the exchange of the vacuum chamber is facilitated, and the vacuum chamber can be easily manufactured.

Further, in the plasma processing apparatus of the present invention (claim 3), since an O-ring is used for the seal and a plurality of O-rings are provided, gas leakage at the joint surface between the upper chamber and the lower chamber can be effectively prevented. Can be prevented.

In the plasma processing apparatus of the present invention (claim 4), a projection is provided at a lower end of the upper chamber other than the gas passage, and a step which engages with the projection at the upper end of the lower chamber. Since the portion is provided, the sealing surface is protected, so that leakage at the joint surface can be prevented.

Further, in the plasma processing apparatus according to the present invention (claim 5), the vacuum chamber is divided near the mounting surface of the substrate support provided in the vacuum chamber, so that only the upper chamber is removed. Cleaning is enough. For this reason, maintenance becomes easy.

In the plasma processing apparatus according to the present invention (claim 6), an upper lid is further provided in the upper chamber, and a gas passage formed in the upper chamber is formed to the inside of the upper lid through a joint surface between the upper lid and the upper chamber. At the same time, a nozzle facing the plasma generation region in the vacuum chamber was formed at the end of this gas passage, and a ring-shaped seal was applied around the gas passage at the joint surface between the upper lid and the upper chamber. From which the source gas can be injected. Therefore, the processing of the substrate can be made uniform.

Further, in the plasma processing apparatus of the present invention (claim 7), the cylindrical vacuum chamber having a plasma generation region therein is vertically divided, and the upper chamber and the lower chamber are stacked and joined to each other. Along with constituting a vacuum chamber, a pipe is connected from an external gas system to a gate passage radially provided in the lowermost chamber,
A gas passage extends from the gate passage to the upper chamber through the joint surface from the lower chamber, and further, an upper lid is provided in the uppermost chamber, and the gas passage extends from the upper chamber to the upper cover through the joint surface. A plurality of nozzles facing the plasma generation region in the inside are provided in a dispersed manner, and an upper gas passage for supplying a source gas to these nozzles is formed, and a ring-shaped seal is provided around the gas passage on the joint surface. This simplifies the manufacture of the vacuum chamber.

[Brief description of the drawings]

FIG. 1 is a plasma CV according to a first embodiment of the present invention.
It is a schematic structure figure showing D device.

FIG. 2 is a partial cross-sectional view of the plasma CVD apparatus shown in FIG.

FIG. 3 is an assembly view of the plasma CVD apparatus shown in FIG.

FIG. 4 is an explanatory view showing a replacement operation of an upper chamber.

FIG. 5 is an assembly view showing a configuration when a double O-ring is used.

FIG. 6 is a partial cross-sectional view showing a modification of the gas passage.

FIG. 7 is a plasma CV according to the second embodiment of the present invention.
It is sectional drawing which shows D apparatus.

FIG. 8 is a partial cross-sectional view of the plasma CVD apparatus shown in FIG.

FIG. 9 is a plan view of the upper lid shown in FIG. 7;

FIG. 10 shows a plasma C according to a third embodiment of the present invention.
It is sectional drawing which shows a VD apparatus.

FIG. 11 shows a plasma C according to a fourth embodiment of the present invention.
FIG. 2 is a cross-sectional configuration diagram illustrating a VD device.

FIG. 12 is a plan view of the upper lid shown in FIG.

FIG. 13 shows a plasma C according to a fifth embodiment of the present invention.
FIG. 2 is a cross-sectional configuration diagram illustrating a VD device.

FIG. 14 is a sectional view showing an example of a conventional plasma CVD apparatus.

FIG. 15 is an explanatory view of the plasma CVD apparatus shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Substrate support 3 Gas passage 4 Upper chamber 5 Horizontal magnetic field coil 6 Upper lid 7 High frequency antenna 8 Matching device 9 High frequency power supply 10 Matching device 11 Bias low frequency power supply 12 Lower chamber 13 Exhaust pipe 14 Automatic pressure control valve 20 Gate passage 21 Joining surface 22 Nozzle 23 O-ring 24 Ring groove 25 Projection 26 Step 27 Sealing surface 28 Gas pipe 29 Piping

Continuation of the front page (72) Inventor Hitoshi Sakamoto 2-1-1 Shinhama, Arai-machi, Takasago-shi, Hyogo F-term in Takasago Research Laboratory, Mitsubishi Heavy Industries, Ltd. 4G075 AA24 AA51 BC02 BC04 BC06 BD14 CA47 CA65 DA02 EA06 EB15 EB41 EC02 EC06 EC26 EC30 EE13 FB02 FB04 4K030 EA06 FA04 KA10 KA30 5F045 AA08 BB10 EB02 EB06 EB10 EF01 EF08 EH02 EJ04 EJ09 EM05

Claims (7)

[Claims] 1. A cylindrical vacuum chamber having a plasma generation region therein is vertically divided, and an upper chamber and a lower chamber are stacked to form a vacuum chamber with a joining surface. An annular gas passage is formed in the side wall and in the circumferential direction thereof, and a plurality of gas passages are formed upward from the annular gas passage, and the gas passage extends from the lower chamber to the upper chamber through the joint surface. An end portion forming a nozzle facing a plasma generation region in the upper chamber, further having a gate passage connected to an external gas system for introducing a gas into the annular gas passage and supplying a raw material gas; 3. A plasma processing apparatus, wherein a ring-shaped seal is provided around a gas passage in the above. 2. A cylindrical vacuum chamber having a plasma generation region therein is vertically divided, and the upper chamber and the lower chamber are stacked to form a vacuum chamber with a joint surface. An annular gas pipe is provided around it, and for this annular gas pipe,
A pipe was connected from each gate passage radially provided in the lowermost chamber, and a gas passage from each gate passage reached the upper chamber through the joining surface from the lower chamber to the upper chamber, and its end was directed to the plasma generation region in the upper chamber. Forming a nozzle, further introducing a gas into the annular gas pipe and connecting a gas system for supplying a raw material gas to the outside, and forming a ring-shaped seal around a gas passage on the joint surface. Plasma processing equipment. 3. The plasma processing apparatus according to claim 1, wherein an O-ring is used for the seal, and a plurality of O-rings are provided. 4. The apparatus according to claim 1, wherein a projection is provided at a lower end of the upper chamber other than the gas passage, and a step is provided at an upper end of the lower chamber to engage with the projection. The plasma processing apparatus according to any one of claims 1 to 3. 5. The apparatus according to claim 1, wherein a substrate support is disposed in the vacuum chamber, and the vacuum chamber is divided near a lower surface of the mounting surface of the substrate support. 5. The plasma processing apparatus according to any one of 4. 6. An upper lid is provided in the upper chamber,
A gas passage formed in the upper chamber is formed through the joint surface between the upper lid and the upper chamber to the inside of the upper lid, and a nozzle is formed at an end of the gas passage toward a plasma generation region in the vacuum chamber. The plasma processing apparatus according to any one of claims 1 to 5, wherein a ring-shaped seal is provided around a gas passage at a joint surface with the upper chamber. 7. A vacuum chamber having a plasma generation region therein is vertically divided, and an upper chamber and a lower chamber are stacked to form a vacuum chamber with a joining surface. A pipe is connected to a gate passage provided from an external gas system, a gas passage from the gate passage extends from the lower chamber to the upper chamber through the joint surface, and further, an upper lid is provided in the uppermost chamber, and the gas passage is provided. From the upper chamber to the upper lid through the bonding surface, the upper lid is provided with a plurality of nozzles dispersed toward a plasma generation region in the upper chamber, and an upper lid gas passage for supplying a raw material gas to these nozzles is formed. And a ring-shaped seal is provided around the gas passage on the joint surface. Equipment.