JP2001353682A - Electrostatic attraction device, substrate conveyor and evacuation process device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide techniques related to an electrostatic attraction device capable of electrostatically attracting a substrate, particularly when the substrate is deflected. SOLUTION: The electrostatic attraction device 33 has a rectangular support 40, driveshafts 211 to 214 arranged at the four corners of the support, and oscillatable plate-shaped electrostatic attracting parts 231 to 234 mounted at the ends of the driveshafts. Since the surface of each of the attracting parts 231 to 234 can be tilted in all directions, even if the substrate 11 is deflected and no longer flat, the surface of each of the attracting parts 231 to 234 is tilted along the surface of the deflected substrate 11 and the surface of the substrate 11 becomes parallel with the surface of each of the attracting parts 231 to 234 resulting in the contact of the overall surface of each of the attracting parts 231 to 234 with the surface of the substrate 11. Thus, the area of contact with the surface of the substrate 11 increases and an electrostatic attracting force also increases, ensuring that the device electrostatically attracts and retains the deflected substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic attraction device, a substrate transfer device, and a vacuum processing device, and more particularly to an electrostatic attraction device capable of electrostatically attracting a substrate having an uneven flat surface.
The present invention relates to a substrate transfer device and a vacuum processing device having the electrostatic suction device.

[0002]

2. Description of the Related Art Conventionally, a substrate transfer robot has been used to carry a substrate in and out of a vacuum apparatus. Reference numeral 110 in FIG. 10A denotes a vacuum processing apparatus (sputtering apparatus), which has a vacuum chamber 112 and a substrate transfer apparatus 120. A cathode electrode 113 is disposed on the ceiling side in the vacuum chamber 112, and a substrate suction device 114 is disposed on the bottom wall side.

[0003] The substrate transfer device 120 includes a driving device 121.
And an arm 122 attached to the driving device 121;
And a holding portion 123 attached to a tip of the arm portion 122.

FIGS. 11A and 11B show the structure of the holding section 123. FIG. FIG. 13A corresponds to a cross-sectional view taken along line XX of FIG. The holding portion 123 includes a metal plate 124 and the metal plate 1.
24 has a dielectric layer 125 disposed thereon. This dielectric layer 125 is made of ceramics,
First and second electrodes 127 _{1 made of} conductive carbon,
127 ₂ are formed.

FIG. 1B is a plan view of the first and second electrodes 127 ₁ and 127 ₂ . First and second electrodes 127 ₁ , 12
7 ₂ is formed into a comb-like portions of the teeth are arranged to mesh with each other. First and second electrodes 127
₁ and 127 ₂ are connected to a power source provided outside the vacuum chamber 112, and when the power source is driven, the first and second power sources are connected.
DC voltage can be applied between the electrodes 127 ₁ and 127 ₂ . On the first and second electrodes 127 ₁ and 127 ₂ ,
A protective film 130 is formed so as to cover the first and second electrodes 127 ₁ and 127 ₂ and the surface of the dielectric layer 125.

In order to form a film on the surface of the substrate in the above-described vacuum chamber 112, first, the surface of the substrate
Are placed on the first and second electrodes 127 ₁ and 127 ₂
During this time, a DC voltage is applied.

In general, when a dielectric having a polarizability α is placed in an inhomogeneous electric field E, a gradient force expressed by the following equation acts on the dielectric per unit area. f = · α · grad (E ² ) In the holding unit 123 described above, the first and second
The distance between the electrodes 127 ₁ and 127 ₂ is very small. As a result, when the substrate made of a dielectric is placed on the surface, grad (E ² ) in the above equation is large.

As a result, the substrate 111 receives the above-mentioned gradient force in the surface direction of the holding portion 123, and
1 is electrostatically attracted to the surface of the holding section 123. FIG. 12 is a diagram schematically showing the state. 12, reference numeral 122 denotes first and second electrodes 127 ₁ , 12 ₁
Shows a DC power supply for applying a DC voltage between 7 _2, reference symbol E denotes an electric field. The symbol f indicates the direction of the gradient force acting on the substrate 111.

In this manner, the substrate 111 is
While the arm 122 is horizontally moved,
The substrate 111 is stopped on the substrate suction device 114. Next, the elevating mechanism 106 disposed at the bottom of the vacuum chamber 112 is operated to move the substrate 111 from above the holding unit 123 to the elevating mechanism 10.
6 and lower the elevating mechanism 106 so that the substrate 11
1 is placed on the substrate suction device 114 (FIG. 10B), the arm 122 and the holding unit 123 are extracted from the vacuum chamber 112, and
The vacuum chamber 112 is sealed, a sputtering gas is introduced,
A target disposed on the cathode electrode 113 is sputtered to form a predetermined thin film on the surface of the substrate 111.

When a thin film having a predetermined thickness is formed, the vacuum chamber 1
12 is opened, the lifting mechanism 106 is raised, and the substrate 111
Is raised to a predetermined position, and the arm portion 122 and the holding portion 123
Is loaded into the vacuum chamber 112 and the holding unit 123 is
After moving the substrate 111 onto the holding unit 123 by lowering the elevating mechanism 106, the holding unit 123
It is electrostatically adsorbed on the top. Then, the holding part 123 and the arm part 1
22 is taken out of the vacuum chamber 112, and the substrate 111 is taken out of the apparatus.

In the above-described holding section 123, since the substrate is electrostatically attracted by the gradient force, it is possible to electrostatically attract an insulating substrate such as a glass substrate. Further, since the substrate 111 is held by the electrostatic attraction force, even if the holding unit 123 is moved at a high speed, the substrate 111 does not easily slide down from the holding unit 123, and the substrate 111 can be moved at a high speed.

However, after the film forming process, the substrate 111
May be warped by the stress generated during film formation. Since the surface of the holding portion 123 is formed flat, when the substrate 111 is warped, as shown in FIG. Therefore, the contact area between the surface of the holding portion 123 and the substrate 111 becomes extremely small. For this reason, the electrostatic attraction force is smaller than when the substrate 111 is not warped, and the substrate 111 cannot be reliably electrostatically attracted and held, and the substrate 111 slides down from the holding portion 123 during transportation. And other problems have occurred.

[0013]

SUMMARY OF THE INVENTION The present invention has been made in order to meet the demands of the prior art described above, and its object is to reliably hold a warped substrate by electrostatic attraction. It is to provide a possible technology.

[0014]

According to a first aspect of the present invention, there is provided an electrostatic attraction device comprising: a plurality of mounting members; a plurality of mounting members; Has an electrostatic attraction unit configured to be able to freely tilt with respect to the, the electrostatic attraction unit, the carrier,
And a first electrode and a second electrode provided on the carrier. According to a second aspect of the present invention, there is provided the electrostatic attraction device according to the first aspect, wherein the electrostatic attraction unit is disposed at least at a vertex of a quadrilateral. The invention according to claim 3 is the electrostatic attraction device according to any one of claims 1 and 2, wherein a protective film is formed on a surface of the first and second electrodes. Features. The invention according to claim 4 is a substrate transfer device including an arm configured to be movable, and a holding unit provided on the arm and configured to be movable by movement of the arm. The holding unit includes the electrostatic attraction device according to any one of claims 1 to 3. The invention according to claim 5 has a vacuum chamber capable of evacuating and an electrostatic suction device arranged in the vacuum chamber, wherein the substrate is electrostatically suctioned to the electrostatic suction device, A vacuum processing apparatus configured to be able to perform vacuum processing of the electrostatic suction apparatus, wherein the electrostatic suction apparatus is configured by the electrostatic suction apparatus according to any one of claims 1 to 4. Features.

The electrostatic attraction device of the present invention has a plurality of mounting members and an electrostatic attraction portion attached to each of the mounting portions. You can tilt freely.

For this reason, when the substrate is warped and its surface is inclined with respect to the horizontal plane, the electrostatic attraction portion is brought into contact with the substrate surface when the electrostatic attraction portion is brought into contact with the substrate surface. And the entire surface of the electrostatic attraction portion is in contact with the inclined surface of the substrate.

In this state, when a voltage is applied to the first and second electrodes and the substrate is electrostatically attracted to the surface of the electrostatic attraction portion by a gradient force, the electrostatic attraction portion and the substrate surface are compared with the prior art. Contact area increases, and the electrostatic attraction force increases,
Even when the substrate is warped, the substrate can be reliably held by electrostatic attraction.

In the present invention, the electrostatic attraction unit may be arranged so as to be located at least at the apex of a quadrilateral. When a rectangular substrate is electrostatically attracted, the size and shape of the quadrilateral are made the same as the substrate in advance, so that the electrostatic attracting portion abuts the four corners of the substrate and electrostatically attracts the four corners of the substrate. To hold the substrate.

Further, a protective film may be formed on the surfaces of the first and second electrodes of each electrostatic attracting portion. With this configuration, since the first and second electrodes do not directly contact the substrate, when the first and second electrodes are made of a material having low wear resistance, the life thereof is prolonged. .

Further, since the substrate transfer device of the present invention has the electrostatic suction device of the present invention, even if the substrate is warped, the substrate is reliably held by electrostatic suction. , Can be conveyed at high speed.

Further, since the vacuum processing apparatus of the present invention has the electrostatic suction device of the present invention, even if the substrate is warped, the substrate is reliably held by electrostatic suction. Vacuum processing can be performed in the state.

[0022]

Embodiments of the present invention will be described below with reference to the drawings. Reference numeral 10 in FIG. 1 indicates a vacuum processing apparatus (sputtering apparatus) according to an example of the present invention. The vacuum processing device 10 has a vacuum chamber 12 and a transfer chamber 15. The cathode electrode 1 is provided on the ceiling side in the vacuum chamber 12.
3 is disposed, and a substrate suction device 14 is disposed on the bottom wall side.

In the transfer chamber 15, a substrate transfer device 36 is disposed. The substrate transfer device 36 includes a driving device 31
And an arm 32 attached to the driving device 31, and an electrostatic attraction device 33 attached to a tip of the arm 32. A motor (not shown) is arranged in the drive device 31. One end of the arm 32 is connected to the motor, and is configured to be able to expand and contract in a horizontal plane and move in a vertical direction.

The electrostatic attraction device 33 is provided at the other end of the arm 32 and is configured to be able to move in the horizontal and vertical directions as the arm 32 moves. FIG. 2A shows an example of the configuration of the electrostatic suction device 33. The electrostatic suction device 33 includes a rectangular frame-shaped support 40 and four support shafts 21.
_{1 to} 21 ₄ , joint portions 22 _{1 to} 22 ₄ , and plate-shaped electrostatic attraction portions 23 ₁ to 23 ₄ .

[0025] 4 support shaft 21 ₁ to 21 ₄ of the present, each one end fixed to the four corners of the support 40 are respectively fixed to the electrostatic adsorption unit 23 ₁ to 23 ₄ is the other end, the support 40 It is arranged to be perpendicular to the surface.

[0026] Each support shaft 21 ₁ to 21 _4, the joint portion 22 ₁ to 22 ₄ are provided, each of the support shaft 21 ₁ to 21 ₄
Is about the joint portion 22 ₁ to 22 _4, which is configured to be able to bend freely in any direction, the surface 28 _{1-28 4} electrostatic attraction portion 23 _{1-23 4}
Can tilt in any direction.

[0027] Figure 3 the structure of the electrostatic adsorption unit 23 ₁ to 23 ₄
(a) and (b) show. FIG (b) Each electrostatic adsorption unit 23 21 _to
3 shows a plan view of _4, FIG. (A) is the figure (b) A-
This corresponds to a sectional view taken along line A.

These electrostatic attracting portions 23₁~ 23_FourIs a metal
A plate 24 and a dielectric layer 25 disposed on the metal plate 24;
And a plate-shaped carrier 26 made of. The dielectric layer 25
Al _TwoO_ThreeMade of ceramics whose main component is
Face 28₁~ 28_FourThe first and second electrodes 2 made of carbon
7₁, 27_TwoAre formed.

FIG. 3B is a plan view of the first and second electrodes 27 ₁ and 27 ₂ . The first and second electrodes 27 ₁ and 27 ₂ are formed in a comb shape, and are arranged so that their tooth portions mesh with each other.

Each of the _first and second electrodes 27 ₁ and 27 ₂ is connected to a DC power source (not shown). When the DC power source is driven, a direct current is applied between the _first and _second electrodes 27 ₁ and 27 _2. It is configured so that a voltage can be applied.

The first and second electrodes 27 ₁ and 27 ₂ are made of silicon nitride so as to cover the first and second electrodes 27 ₁ and 27 ₂ and the surface of the dielectric layer 25. A protective film 30 is formed.

A transfer chamber (not shown) is connected to the transfer chamber 15. When the surface of a glass substrate is formed by sputtering using the vacuum processing apparatus 10 having the above-described configuration, an insulating substrate to be formed is placed on a mounting table (not shown) in the loading / unloading chamber, and the vacuum processing is performed. The tank 12, the transfer chamber 15, and the loading / unloading chamber are kept in a vacuum atmosphere.

Next, the substrate transfer device 36 is operated, the arm portion 32 and the electrostatic attraction device 33 are put into the loading / unloading chamber from the transfer chamber 15, and the electrostatic attraction device 33 is positioned above the substrate. Support of an electrostatic adsorption device 33 40 is almost the same size as the substrate 11, the alignment so as to be positioned substantially four corners of the electrostatic chuck portion 23 disposed at the four corners _{1-23 4} substrate 11 Then, the support 40 is lowered.

Then, each electrostatic chuck 23₁~ 23_FourIs the board
Contact four corners of 11 The state is shown in FIG. This
In this case, the substrate 11 has no warp, and the surface of the substrate 11 is
Where each electrostatic attraction portion 23 is flat.₁
~ 23_FourAre the respective surfaces 28₁~ 28_FourAll of the board
Contact the four corner surfaces of the eleventh corner. In this state, the first and second
Electrode 27₁, 27_TwoWhen a voltage is applied between the first and second
Electrode 27₁, 27_TwoOf the substrate 11
Each electrostatic attraction part 23 whose surface is in contact with each surface₁~ 23_FourTable
Face 28 ₁~ 28_FourThe substrate 1 receives the gradient force in the direction
The four corners of one surface are₁~ 23_FourElectrostatic adsorption
Is done.

Thereafter, the arm 32 is horizontally moved to take out the electrostatic suction device 33 from the loading / unloading chamber, and is carried into the vacuum chamber 12 via the transfer chamber 15, and then the substrate 11 is stopped on the substrate suction device 14. (FIG. 5 (a)).

Next, the lifting pins 6 arranged at the bottom of the vacuum chamber 12 are raised, and when the back surface of the substrate 11 abuts on the tip thereof, the application of voltage to the _first and _second electrodes 27 ₁ and 27 ₂ is stopped. Then, the electrostatic attraction state of the substrate 11 is released. Then, the substrate 11 rides on the tip of the lifting pin 6, and the substrate 11 is transferred from the electrostatic suction device 33 to the lifting pin 6.

Thereafter, when the lifting pins 6 are lowered, the substrate 11 is placed on the substrate suction device 14 (FIG. 5B). After being placed, the substrate 11 is electrostatically attracted onto the substrate attracting device 14. Next, the arm 32 and the electrostatic chuck 33 are connected to the vacuum chamber 1.
2, the vacuum chamber 12 is sealed, a sputtering gas is introduced, a target placed on the cathode electrode 13 is sputtered, and a film forming process is performed on the surface of the substrate 11.

When a thin film having a predetermined thickness is formed, the substrate 11 is raised to a predetermined position by raising the elevating pins 6, the vacuum chamber 12 is connected to the transfer chamber 15, the arm 22 and the electrostatic chuck 33. Is transported into the vacuum chamber 12, and the electrostatic chuck 33 is positioned above the substrate 11.

FIG. 4A shows this state. Here, it is assumed that the substrate 11 has been warped due to stress during film formation. In the state shown in FIG. 4A, the lifting pins 6 are raised, and the substrate 11 is raised. Then, each electrostatic suction part 2
3 _{1-23 4} is in contact with the surface of the substrate 11.

As described above, each of the electrostatic attraction portions 23 ₁ to 23 2
Since 3 surface 28 _{1-28 4 4} can be inclined in all directions, the substrate 11 is warped, even its surface is inclined relative to a horizontal plane, each of the electrostatic adsorption unit 23 ₁ to 23 ₄ of the substrate 11 Incline so that it is parallel to the inclined surface. This allows
As shown in FIG. 4 (b), the surface 28 _{1-28 4} each electrostatic adsorption unit 23 ₁ to 23 ₄ are in contact in parallel with the four corners of the surface of the substrate 11, as a result, surface 28 ₁ - almost all of the 28 ₄ is in contact with the surface of the substrate 11.

In this state, the first and second electrodes 27 ₁ , 2
When a voltage is applied between the 7 _2, first, second electrodes 27 _1, 2
The electric field generated between the 7 _2, each of the electrostatic adsorption unit 23 _1-23
4 contact with the four corners of the surface of the substrate 11, the respective electrostatic attraction portion 2
3 _{1-23 4} directions subjected to gradient forces, are electrostatically attracted to each of the electrostatic adsorption unit 23 ₁ to 23 _4.

As described above, each of the electrostatic attraction portions 23 ₁ to 23 2
Substantially all of the 3 ₄ surface, by contacting the surface of the substrate 11, only a small portion of the holding portion 123 as compared with the conventional case where in contact with the substrate 111, the contact area with the substrate 11 is increased. For this reason, the electrostatic attraction force becomes larger than before, and even when the substrate 11 warps, the substrate 11 can be reliably electrostatically attracted and held.

Thereafter, the lifting pins 6 are lowered to move the substrate 11
Is transferred onto the electrostatic suction device 33 (FIG. 6). Thereafter, the electrostatic chuck 33 and the arm 22 are taken out of the vacuum chamber 12, and the substrate 11 is taken out of the apparatus.

Incidentally, the above-mentioned electrostatic attraction portions 23 ₁ to 23 _1
4 has a structure in which the first and second electrodes 27 ₁ and 27 ₂ are formed on the surface of the dielectric layer 25 and the protective film 30 is formed. However, for example, as shown by reference numerals 41 to 44 in FIGS. 7A to 7D, concave portions are formed on the surface of the dielectric layer 25, and first and second electrodes are formed in each concave portion. 27 ₁ and 27 ₂ may be arranged so that the protective film is not provided.

In the electrostatic chuck 41 shown in FIG. 9A, the upper ends of the first and second electrodes 27 ₁ and 27 ₂ protrude from above the dielectric layer 25. The surface of the substrate 11 contacts the upper ends of the electrodes 27 ₁ and 27 ₂ , and a gap is formed between the substrate surface and the dielectric layer 25.

In the electrostatic attraction part 42 shown in FIG. 4B, the upper ends of the _first and _second electrodes 27 ₁ and 272 are formed at the same height as the surface of the dielectric layer 25. That is, the surface of the dielectric layer 25 and the upper ends of the _first and second electrodes 27 ₁ and 27 ₂ are formed flush with each other, and the surface of the substrate 11 is
7 _1, in contact with both the 27 _second upper portion and the dielectric layer 25 of the surface.

In the electrostatic chuck 43 shown in FIG. 9C, the upper ends of the _first and _second electrodes 27 ₁ and 27 ₂ are formed lower than the surface of the dielectric layer 25. That is, the first and second electrodes 2
The upper ends of 7 ₁ and 27 ₂ are located in the recessed portions in the recesses, and a projection formed by the surface portion of the dielectric layer 25 is provided between the _first and _second electrodes 27 ₁ and 27 _2. 29 are formed.

In the electrostatic chuck 34, when the substrate 11 is disposed on the surface, the surface of the substrate 11 comes into contact with the upper end of the projection 29, but does not come into contact with the first and second electrodes 27 ₁ and 27 _2. It has become. Accordingly, the first lower substrate 11 is a relatively wear-resistant, since the second electrode 27 _1, 27 ₂ and not in direct contact, the first, second electrodes 27 _1, 27 ₂ of the service life becomes longer.

Further, in the electrostatic attraction unit 44 of FIG.
The first electrode 27 ₁ is arranged inside the recess, the second electrode 27 ₂ is disposed in the upper portion of the projection 29. When configured in this manner, the substrate 1 to the upper end portion of the second electrode 27 ₂
1 comes into contact with each other.

[0050] Further, in the electrostatic chuck 33 described above, it is assumed that electrostatic adsorption unit 23 ₁ to 23 ₄ are disposed at the four corners of the rectangular support 40, respectively, but the present invention is not limited thereto Alternatively, as shown by reference numeral 53 in FIG. 8A, a configuration may be adopted in which the electrostatic attraction unit 23 that can be tilted in any direction is disposed not only at the four corners of the support body 40 but also almost over the entire surface. With this configuration, the warped substrate 11
The surface of each electrostatic attraction portion 23 is in parallel contact over substantially the entire surface of the device. For this reason, since the contact area between the electrostatic attraction unit 23 and the substrate 11 is larger than that of the electrostatic attraction device 33 of FIG. 4A, the electrostatic attraction force is increased, and the substrate 11 is held more securely. be able to. Similarly, the electrostatic attraction unit 23 may be configured to be arranged only around the support 40. Even when configured in this manner, as compared with the case where only arranged electrostatic adsorption unit 23 ₁ to 23 ₄ at the four corners, the electrostatic adsorption force is increased.

Further, in the present invention, the substrate which can be electrostatically attracted is not limited to this, but may be applied to a conductive substrate such as a silicon substrate. Further, in the above-mentioned electrostatic chucking device, the first and second electrodes 27 ₁ , 27 ₂
Is made of conductive carbon, the first of the present invention,
The material of the second electrodes 27 ₁ and 27 ₂ is not limited to this, and may be made of a metal such as aluminum, tungsten, copper, or titanium.

Further, the material of the above-described protective film 30 is
Although silicon nitride was used, the protective film of the present invention
Is not limited to, for example, AlN, TaN, W
Nitride such as N, GaN, BN, InN, SiAlON
Or SiO_Two, Al_TwoO_Three, Cr_TwoO _Three, TiO_Two, TiO,
An oxide such as ZnO may be used. Furthermore, diamond
Or carbides such as TiC, TaC, SiC, etc.
Good, such as polyimide, polyurea, silicone rubber
An organic polymer may be used.

In the present embodiment, each of the electrostatic attraction portions 23
_{1-23 4} are each freely folded bendable support shaft 2
Although it is assumed that is attached to the 1 ₁ to 21 _4, the present invention is not limited to this, the electrostatic adsorption unit 23 ₁ to 23 _4, in all directions if it is configured to be able to tilt freely I just need.

[0054] Further, each of the electrostatic adsorption unit 23 ₁ to 23 _4, first, second electrodes 27 _1, 27 ₂ are formed surface faces downward, the electrostatic adsorption of the surface of the substrate from above However, the electrostatic chuck 33 of the present invention is not limited to this, and the first and second electrodes 27 ₁ , 27 ₂
The surface on which is formed may face upward, and the back surface of the substrate may be electrostatically attracted from below.

In the above-described embodiment, the description has been made assuming that the electrostatic suction device 33 is used for the substrate transfer device 36.
For example, reference numeral 7 in FIG.
1 may be used for the sputtering apparatus.

The sputtering apparatus 71 is provided with a vacuum chamber 7
Two. A cathode electrode 73 is disposed on the ceiling side in the vacuum chamber 72, and a substrate holding device 74 is disposed on the bottom wall side.
Is arranged. The substrate holding device 74 includes the above-described electrostatic suction device 33, and the substrate 1 to be processed is
When the substrate 1 is carried into the vacuum chamber 72, the side surface of the substrate 11 can be electrostatically attracted and held.

In such a sputtering apparatus 71 as well, since the substrate 11 is electrostatically attracted by the above-mentioned electrostatic attracting apparatus 33, even if the substrate 11 is warped, the electrostatic force is reliably applied. Sputtering treatment can be performed in a state of being sucked and held.

[0058]

According to the present invention, even if the substrate is warped, the electrostatic attraction can be reliably performed. In addition, even if the substrate has a curvature, it is possible to reliably perform electrostatic attraction.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a substrate transfer device according to an embodiment of the present invention.

FIG. 2A is a perspective view illustrating an example of an electrostatic chucking device according to an embodiment of the present invention. FIG. 2B is a diagram illustrating a state where the electrostatic chucking device according to an embodiment of the present invention electrostatically holds a substrate. Perspective view explaining

FIG. 3A is a cross-sectional view illustrating an electrostatic attraction unit according to an embodiment of the present invention. FIG. 3B is a plan view illustrating an electrostatic attraction unit according to an embodiment of the present invention.

FIG. 4A is a first diagram illustrating a process of electrostatically adsorbing a warped substrate by the electrostatic chuck according to one embodiment of the present invention; FIG. 4B is an electrostatic chuck according to one embodiment of the present invention; FIG. 2 is a second diagram illustrating a process of electrostatically adsorbing the warped substrate by the apparatus.

5A is a first diagram illustrating the operation of the substrate transfer device of the present invention; FIG. 5B is a second diagram illustrating the operation of the substrate transfer device of the present invention;

FIG. 6 is a third diagram illustrating the operation of the substrate transfer apparatus according to the present invention.

FIG. 7A is a first cross-sectional view illustrating an electrostatic chuck according to another embodiment of the present invention. FIG. 7B is a second cross-sectional view illustrating an electrostatic chuck according to another embodiment of the present invention. Cross-sectional view (c): Third cross-sectional view illustrating an electrostatic attraction unit according to another embodiment of the present invention (d): Fourth cross-sectional view illustrating an electrostatic attraction unit according to another embodiment of the present invention

FIG. 8A is a first diagram illustrating a step of electrostatically adsorbing a substrate by an electrostatic attraction device according to another embodiment of the present invention. FIG. 8B is an electrostatic attraction according to another embodiment of the present invention. FIG. 2 is a second diagram illustrating a process in which the apparatus electrostatically attracts a substrate.

FIG. 9 illustrates a vacuum processing apparatus of the present invention.

10A is a first diagram illustrating the operation of a conventional vacuum processing device. FIG. 10B is a second diagram illustrating the operation of a conventional vacuum processing device.

11A is a cross-sectional view illustrating a configuration of a conventional electrostatic attraction device. FIG. 11B is a plan view illustrating a configuration of a conventional electrostatic attraction device.

FIG. 12 is a diagram illustrating a gradient force.

FIG. 13 is a diagram illustrating a problem of a conventional electrostatic attraction device.

[Explanation of symbols]

11 ... board 21 _{1 to} 21 ₄ ... support shaft (mounting member)
23 _{1-23 4} ...... electrostatic adsorption unit 26 ...... carrier 2
7 ₁ ... First electrode 27 ₂ ... Second electrode 33... Electrostatic attraction device 36.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3F061 AA01 CA00 CB05 CB14 5F031 CA05 FA02 FA07 FA12 FA15 GA30 GA32 GA33 GA49 HA05 HA18 HA33 MA29 NA05 PA13

Claims (5)

[Claims] 1. An electrostatic attraction unit, comprising: a plurality of attachment members; and an electrostatic attraction unit provided on each of the attachment members and configured to be able to freely tilt with respect to the attachment member. Is a carrier, the first provided on the carrier,
An electrostatic chuck comprising: a second electrode; 2. The electrostatic attraction device according to claim 1, wherein the electrostatic attraction unit is arranged at least at a vertex of a quadrilateral. 3. The electrostatic attraction device according to claim 1, wherein a protective film is formed on surfaces of the first and second electrodes. 4. A substrate transfer apparatus comprising: an arm configured to be movable; and a holding unit provided on the arm, configured to be movable by movement of the arm, wherein the holding unit includes: A substrate transfer device comprising the electrostatic suction device according to any one of claims 1 to 3. 5. A vacuum processing apparatus, comprising: a vacuum chamber capable of evacuating; and an electrostatic suction device disposed in the vacuum chamber, wherein the substrate is vacuum-processed while the substrate is electrostatically suctioned to the electrostatic suction device. A vacuum processing apparatus configured to be able to perform the operation, wherein the electrostatic suction apparatus is configured by the electrostatic suction apparatus according to any one of claims 1 to 4. Vacuum processing equipment.