JP2001351436A - Conductive paste composition and electronic components using same - Google Patents
Conductive paste composition and electronic components using sameInfo
- Publication number
- JP2001351436A JP2001351436A JP2000168371A JP2000168371A JP2001351436A JP 2001351436 A JP2001351436 A JP 2001351436A JP 2000168371 A JP2000168371 A JP 2000168371A JP 2000168371 A JP2000168371 A JP 2000168371A JP 2001351436 A JP2001351436 A JP 2001351436A
- Authority
- JP
- Japan
- Prior art keywords
- group
- powder
- paste composition
- weight
- conductive paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 41
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000002245 particle Substances 0.000 claims abstract description 32
- 239000000843 powder Substances 0.000 claims abstract description 26
- 229920005992 thermoplastic resin Polymers 0.000 claims abstract description 9
- 239000003960 organic solvent Substances 0.000 claims abstract description 6
- 125000003118 aryl group Chemical group 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 125000003545 alkoxy group Chemical group 0.000 claims description 5
- 125000005843 halogen group Chemical group 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 claims description 4
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims description 4
- 125000003368 amide group Chemical group 0.000 claims description 3
- 125000004185 ester group Chemical group 0.000 claims description 3
- 125000001033 ether group Chemical group 0.000 claims description 3
- 125000005462 imide group Chemical group 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract description 16
- 238000000576 coating method Methods 0.000 abstract description 16
- 238000013508 migration Methods 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 3
- 239000004615 ingredient Substances 0.000 abstract 1
- -1 aromatic tricarboxylic acid Chemical class 0.000 description 18
- 230000005012 migration Effects 0.000 description 12
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 7
- 150000004985 diamines Chemical class 0.000 description 7
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 5
- 239000007822 coupling agent Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 4
- 239000001273 butane Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 4
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- BJINVQNEBGOMCR-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethyl acetate Chemical compound COCCOCCOC(C)=O BJINVQNEBGOMCR-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 2
- NJMOHBDCGXJLNJ-UHFFFAOYSA-N trimellitic anhydride chloride Chemical compound ClC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 NJMOHBDCGXJLNJ-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- SDXVLJIIPGSHLW-UHFFFAOYSA-N 2-(2-phenylphenoxy)aniline Chemical group NC1=CC=CC=C1OC1=CC=CC=C1C1=CC=CC=C1 SDXVLJIIPGSHLW-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- MTVRACIHAHWZEW-UHFFFAOYSA-N 2-phenoxycarbonylterephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(=O)OC=2C=CC=CC=2)=C1 MTVRACIHAHWZEW-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 1
- XUSNPFGLKGCWGN-UHFFFAOYSA-N 3-[4-(3-aminopropyl)piperazin-1-yl]propan-1-amine Chemical compound NCCCN1CCN(CCCN)CC1 XUSNPFGLKGCWGN-UHFFFAOYSA-N 0.000 description 1
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 1
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 1
- WMZNGTSLFSJHMZ-UHFFFAOYSA-N 3-methoxycarbonylbenzoic acid Chemical compound COC(=O)C1=CC=CC(C(O)=O)=C1 WMZNGTSLFSJHMZ-UHFFFAOYSA-N 0.000 description 1
- WBDYQJGGWYVVHQ-UHFFFAOYSA-N 3-methoxycarbonylpyridine-2,6-dicarboxylic acid Chemical compound COC(=O)C1=CC=C(C(O)=O)N=C1C(O)=O WBDYQJGGWYVVHQ-UHFFFAOYSA-N 0.000 description 1
- SGEWZUYVXQESSB-UHFFFAOYSA-N 3-methylheptane-1,7-diamine Chemical compound NCCC(C)CCCCN SGEWZUYVXQESSB-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- WVDRSXGPQWNUBN-UHFFFAOYSA-N 4-(4-carboxyphenoxy)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C=C1 WVDRSXGPQWNUBN-UHFFFAOYSA-N 0.000 description 1
- NEQFBGHQPUXOFH-UHFFFAOYSA-N 4-(4-carboxyphenyl)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C=C1 NEQFBGHQPUXOFH-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- KWOIWTRRPFHBSI-UHFFFAOYSA-N 4-[2-[3-[2-(4-aminophenyl)propan-2-yl]phenyl]propan-2-yl]aniline Chemical compound C=1C=CC(C(C)(C)C=2C=CC(N)=CC=2)=CC=1C(C)(C)C1=CC=C(N)C=C1 KWOIWTRRPFHBSI-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- NFLVPFYEUUKWTB-UHFFFAOYSA-N 4-[4-[1-[4-(4-aminophenoxy)phenyl]cyclopentyl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C2(CCCC2)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 NFLVPFYEUUKWTB-UHFFFAOYSA-N 0.000 description 1
- LDFYRFKAYFZVNH-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 LDFYRFKAYFZVNH-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 229920002614 Polyether block amide Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- AMNPXXIGUOKIPP-UHFFFAOYSA-N [4-(carbamothioylamino)phenyl]thiourea Chemical compound NC(=S)NC1=CC=C(NC(N)=S)C=C1 AMNPXXIGUOKIPP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 125000005336 allyloxy group Chemical group 0.000 description 1
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 1
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- FDQSRULYDNDXQB-UHFFFAOYSA-N benzene-1,3-dicarbonyl chloride Chemical compound ClC(=O)C1=CC=CC(C(Cl)=O)=C1 FDQSRULYDNDXQB-UHFFFAOYSA-N 0.000 description 1
- LSDYQEILXDCDTR-UHFFFAOYSA-N bis[4-(4-aminophenoxy)phenyl]methanone Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 LSDYQEILXDCDTR-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010332 dry classification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- CNEKKZXYBHKSDC-UHFFFAOYSA-N ethyl acetate;propane-1,2-diol Chemical compound CC(O)CO.CCOC(C)=O CNEKKZXYBHKSDC-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 1
- 229940011051 isopropyl acetate Drugs 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- RMHJJUOPOWPRBP-UHFFFAOYSA-N naphthalene-1-carboxamide Chemical compound C1=CC=C2C(C(=O)N)=CC=CC2=C1 RMHJJUOPOWPRBP-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- BYOIQYHAYWYSCZ-UHFFFAOYSA-N prop-2-enoxysilane Chemical compound [SiH3]OCC=C BYOIQYHAYWYSCZ-UHFFFAOYSA-N 0.000 description 1
- NQSMDRQSCOCSKD-UHFFFAOYSA-N pyridine-2,3,6-tricarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=N1 NQSMDRQSCOCSKD-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 235000003441 saturated fatty acids Nutrition 0.000 description 1
- 150000004671 saturated fatty acids Chemical class 0.000 description 1
- ONVGIJBNBDUBCM-UHFFFAOYSA-N silver;silver Chemical compound [Ag].[Ag+] ONVGIJBNBDUBCM-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- TXXHDPDFNKHHGW-ZPUQHVIOSA-N trans,trans-muconic acid Chemical compound OC(=O)\C=C\C=C\C(O)=O TXXHDPDFNKHHGW-ZPUQHVIOSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 1
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Conductive Materials (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、新規な導電性ペー
スト組成物およびこれを用いた電子部品に関する。さら
に詳しくは、耐マイグレーション性に優れた導電性ペー
スト組成物とこれを用いた耐湿信頼性に優れた電子部品
に関する。[0001] The present invention relates to a novel conductive paste composition and an electronic component using the same. More specifically, the present invention relates to a conductive paste composition having excellent migration resistance and an electronic component having excellent moisture resistance reliability using the same.
【0002】[0002]
【従来の技術】電子部品の分野では、金属をはじめとす
る導電性物質を樹脂に練りこみペースト状とし、これを
電気回路や電極の形成に利用することが一般に行われて
いる。銀はその中でも最も代表的な導電性物質である
が、高湿度条件下で電圧を負荷した場合、非常にイオン
化しやすく、マイグレーションと称する銀の移行現象が
しばしば観察される。マイグレーションが発生すると電
極間で短絡が起こり、電子部品における耐湿信頼性の低
下原因となる。上記の問題点を解決するために銀粉の代
わりにニッケル粉末、パラジウム粉末、あるいは銅粉末
を添加する検討や各種の添加剤を添加する検討がなされ
てきたが、いずれも電極材としての抵抗値が高く抜本的
な対策となっていない。また、数種の材料を重ね合わせ
て電極を形成した場合、導電性粉末が球状粉やアトマイ
ズ粉であると接触抵抗が増大するという問題点が挙げら
れる。2. Description of the Related Art In the field of electronic components, it is common practice to paste a conductive substance such as a metal into a resin and form it into a paste, which is used for forming an electric circuit or an electrode. Silver is the most typical conductive substance among them. However, when a voltage is applied under high humidity conditions, silver is very easily ionized, and a silver migration phenomenon called migration is often observed. When migration occurs, a short circuit occurs between the electrodes, which causes a decrease in the moisture resistance reliability of the electronic component. In order to solve the above problems, studies have been made to add nickel powder, palladium powder, or copper powder instead of silver powder, and to add various additives. It is not a high sweeping measure. Further, when an electrode is formed by laminating several kinds of materials, there is a problem that the contact resistance increases when the conductive powder is a spherical powder or an atomized powder.
【0003】[0003]
【発明が解決しようとする課題】本発明は、これらの問
題点を解決するためになされたものであり、ペースト塗
布乾燥後良好な導電性を示し、しかも高温・高湿度下で
の安定性(耐マイグレーション特性)に優れる導電性ペ
ースト組成物およびこれを用いた電子部品を提供するも
のである。すなわち、本発明者らは上記問題点を解決す
る為に種々検討を重ねた結果、使用する導電性粉末に鱗
片状銀粉と鱗片状鍍銀銅粉の混合導電性粉末を用いるこ
とにより、塗布乾燥後の導電性に優れ、かつ耐マイグレ
ーション特性に優れる導電性ペースト組成物を見いだし
本発明に至った。SUMMARY OF THE INVENTION The present invention has been made to solve these problems, and shows good conductivity after paste application and drying, and stability under high temperature and high humidity. An object of the present invention is to provide a conductive paste composition excellent in migration resistance) and an electronic component using the same. That is, the present inventors have conducted various studies to solve the above problems, and as a result, using a mixed conductive powder of flaky silver powder and flaky silver-plated copper powder as the conductive powder to be used, coating and drying. The present inventors have found a conductive paste composition which is excellent in later conductivity and excellent in anti-migration properties, and have reached the present invention.
【0004】[0004]
【課題を解決するための手段】本発明は、(A)導電性
粉末、(B)熱可塑性樹脂及び(C)有機溶剤を必須成
分とする導電性ペースト組成物であって、導電性粉末が
平均粒径0.5μm〜12μmの鱗片状銀粉と平均粒径
0.5μm〜12μmの鱗片状鍍銀銅粉の混合導電性粉
末である導電性ペースト組成物およびこれを用いた電子
部品に関する。The present invention provides a conductive paste composition comprising (A) a conductive powder, (B) a thermoplastic resin and (C) an organic solvent as essential components, wherein the conductive powder is The present invention relates to a conductive paste composition which is a mixed conductive powder of a flaky silver powder having an average particle size of 0.5 μm to 12 μm and a flaky silver-plated copper powder having an average particle size of 0.5 μm to 12 μm, and an electronic component using the same.
【0005】[0005]
【発明の実施の形態】次に、本発明の導電性ペースト組
成物およびこれを用いた電子部品について詳しく説明す
る。本発明に使用される導電性粉末としては、平均粒径
が0.5μm〜12μmの鱗片状銀粉と平均粒径0.5
μm〜12μmの鱗片状鍍銀銅粉の混合導電性粉末とさ
れ、なかでも平均粒径が4μm〜9μmの鱗片状銀粉と
平均粒径が4μm〜9μmの鱗片状鍍銀銅粉の混合導電
性粉末が好ましい。銀粉および鍍銀銅粉の平均粒径が
0.5μm未満であるとペースト中で導電性粉末の凝集
が起こりやすく、平均粒径が12μmより大きいと形成
塗膜の不均一性の要因となる。また、混合導電性粉末の
銀粉と鍍銀銅粉の平均粒径の差は8μm以下であること
が好ましく、4μm以下であることがより好ましい。混
合導電性粉末の平均粒径の差が8μmより大きいと、ペ
ースト中で導電性粉末の分離が起こり、ペーストの安定
性および形成塗膜特性の低下の要因となる。また、本発
明に用いられる混合導電性粉末の鱗片状銀粉と鍍銀銅粉
の混合割合は、銀粉100重量部に対して鍍銀銅粉が1
0重量部〜235重量部であることが好ましく、銀粉1
00重量部に対して鍍銀銅粉60重量部〜150重量部
であることがより好ましい。鍍銀銅粉の混合割合が銀粉
100重量部に対して10重量部未満であると形成塗膜
の耐マイグレーション性が、235重量部を超えると導
電性が低下する傾向がある。さらに、本発明に用いられ
る鍍銀銅粉の鍍銀量は銅粉100重量部に対して0.5
〜20重量部が好ましく、1.5〜5重量部がより好ま
しい。鍍銀銅粉の鍍銀量が銅粉100重量部に対して、
0.5重量部より少ないと導電性が十分でなく、20重
量部より多いと、耐マイグレーション特性の効果が低下
する傾向がある。Next, the conductive paste composition of the present invention and an electronic component using the same will be described in detail. As the conductive powder used in the present invention, flaky silver powder having an average particle size of 0.5 μm to 12 μm and an average particle size of 0.5
Mixed conductive powder of flaky silver-plated copper powder of μm to 12 μm, especially mixed conductive of flaky silver powder having an average particle size of 4 μm to 9 μm and flaky silver-plated copper powder having an average particle size of 4 μm to 9 μm Powders are preferred. When the average particle diameter of the silver powder and the silver-plated copper powder is less than 0.5 μm, aggregation of the conductive powder easily occurs in the paste, and when the average particle diameter is larger than 12 μm, it causes a non-uniformity of the formed coating film. Further, the difference between the average particle diameters of the silver powder and the silver-plated copper powder of the mixed conductive powder is preferably 8 μm or less, more preferably 4 μm or less. If the difference in the average particle size of the mixed conductive powder is larger than 8 μm, the conductive powder is separated in the paste, which causes a decrease in the stability of the paste and the characteristics of the formed coating film. The mixing ratio of the flaky silver powder and the silver-plated copper powder of the mixed conductive powder used in the present invention is such that the silver-plated copper powder is 1 to 100 parts by weight of the silver powder.
0 parts by weight to 235 parts by weight.
More preferably, the amount is 60 parts by weight to 150 parts by weight based on 00 parts by weight. If the mixing ratio of the silver-plated copper powder is less than 10 parts by weight with respect to 100 parts by weight of the silver powder, the migration resistance of the formed coating film tends to decrease if it exceeds 235 parts by weight. Further, the silver plating amount of the silver-plated copper powder used in the present invention is 0.5 to 100 parts by weight of the copper powder.
It is preferably from 20 to 20 parts by weight, more preferably from 1.5 to 5 parts by weight. The amount of silver plated copper powder is based on 100 parts by weight of copper powder.
If the amount is less than 0.5 part by weight, the conductivity is not sufficient, and if the amount is more than 20 parts by weight, the effect of the migration resistance tends to decrease.
【0006】本発明の熱可塑樹脂としては、アクリル樹
脂、スチレン系樹脂、ポリアミド樹脂、ポリカーボネー
ト樹脂、ポリアミドイミド樹脂、ポリエーテルアミド樹
脂等があり、特にこれらに限定されるものではないが、
アミド基、エステル基、イミド基またはエーテル基を有
する樹脂が好ましく、この熱可塑性樹脂は、下記一般式
(I)または(II)で表される繰り返し単位を有する樹
脂であることがより好ましい。As the thermoplastic resin of the present invention, there are acrylic resin, styrene resin, polyamide resin, polycarbonate resin, polyamideimide resin, polyetheramide resin and the like, but not particularly limited thereto.
A resin having an amide group, an ester group, an imide group or an ether group is preferable, and the thermoplastic resin is more preferably a resin having a repeating unit represented by the following general formula (I) or (II).
【0007】[0007]
【化8】 Embedded image
【0008】(式中、R1、R2、R3およびR4はそれぞ
れ独立に水素原子、低級アルキル基、低級アルコキシ基
またはハロゲン原子を表し、Xは化学結合、−O−、(Wherein R 1 , R 2 , R 3 and R 4 each independently represent a hydrogen atom, a lower alkyl group, a lower alkoxy group or a halogen atom, X represents a chemical bond, —O—,
【0009】[0009]
【化9】 Embedded image
【0010】または[0010] or
【0011】[0011]
【化10】 Embedded image
【0012】を表し、ここでR5およびR6はそれぞれ独
立して水素原子、低級アルキル基、トリフルオロメチル
基、トリクロロメチル基またはフェニル基を表す。)Wherein R 5 and R 6 each independently represent a hydrogen atom, a lower alkyl group, a trifluoromethyl group, a trichloromethyl group or a phenyl group. )
【0013】[0013]
【化11】 Embedded image
【0014】またはOr
【0015】[0015]
【化12】 Embedded image
【0016】ここで、Arは、芳香族の2価の基を、A
r′は芳香族の3価の基を表す。Here, Ar is an aromatic divalent group represented by A
r 'represents an aromatic trivalent group.
【0017】[0017]
【化13】 Embedded image
【0018】(式中、Xは−O−または(Wherein X is -O- or
【0019】[0019]
【化14】 Embedded image
【0020】を表し、ここでR10およびR11はそれぞれ
独立に水素原子、低級アルキル基、トリフルオロメチル
基、トリクロロメチル基またはフェニル基を表し、
R7、R8およびR9はそれぞれ独立して低級アルキル
基、低級アルコキシ基またはハロゲン原子を表し、x、
yおよびzはそれぞれ置換基数を示す0〜4の整数であ
り、2個のXは同一でも異なっていてもよく、R7、R8
およびR9はそれぞれ複数個結合しているときは、各々
において、同一でも異なってもよい)Wherein R 10 and R 11 each independently represent a hydrogen atom, a lower alkyl group, a trifluoromethyl group, a trichloromethyl group or a phenyl group;
R 7 , R 8 and R 9 each independently represent a lower alkyl group, a lower alkoxy group or a halogen atom;
y and z is 0 to 4 integer indicating the number of substituents, respectively, two X may be the same or different, R 7, R 8
And when a plurality of R 9 are bonded to each other, they may be the same or different.
【0021】上記の繰り返し単位を有する樹脂は、芳香
族ジカルボン酸、芳香族トリカルボン酸またはこれらの
反応性酸誘導体と以下に説明するジアミンとを反応させ
て製造される。上記の一般式(I)で表される繰り返し
単位は、ジアミンとして例えば、2,2−ビス[4−
(4−アミノフェノキシ)フェニル]プロパン、2,2
−ビス[3−メチル−4−(4−アミノフェノキシ)フ
ェニル]プロパン、2,2−ビス[4−(4−アミノフ
ェノキシ)フェニル]ブタン、2,2−ビス[3−メチ
ル−4−(4−アミノフェノキシ)フェニル]ブタン、
2,2−ビス[3,5−ジメチル−4−(4−アミノフ
ェノキシ)フェニル]ブタン、2,2−ビス[3,5−
ジブロモ−4−(4−アミノフェノキシ)フェニル]ブ
タン、1,1,1,3,3,3−ヘキサフルオロ−2,
2−ビス[3−メチル−4−(4−アミノフェノキシ)
フェニル]プロパン、1,1−ビス[4−(4−アミノ
フェノキシ)フェニル]シクロヘキサン、1,1−ビス
[4−(4−アミノフェノキシ)フェニル]シクロペン
タン、ビス[4−(4−アミノフェノキシ)フェニル]
スルフォン、ビス[4−(4−アミノフェノキシ)フェ
ニル]エーテル、ビス[4−(3−アミノフェノキシ)
フェニル]スルフォン、4,4′−カルボニルビス(p
−フェニレンオキシ)ジアニリン、4,4′−ビス(4
−アミノフェノキシ)ビフェニル等のジアミンを用いて
製造することが好ましい。これらの中では、2,2−ビ
ス[4−(4−アミノフェノキシ)フェニル]プロパン
が特に好ましい。上記の一般式(II)で表される繰り返
し単位はジアミンとして、例えば、1,3−ビス(3−
アミノフェノキシ)ベンゼン、1,3−ビス(4−アミ
ノフェノキシ)ベンゼン、1,4−ビス(4−アミノフ
ェノキシ)ベンゼン、4,4′−[1,3−フェニレン
ビス(1−メチルエチリデン)]ビスアニリン、4,
4′−[1,4−フェニレンビス(1−メチルエチリデ
ン)]ビスアニリン、3,3′−[1,3−フェニレン
ビス(1−メチルエチリデン)]ビスアニリン等のジア
ミンを用いて製造される。また上記反応性成分以外に
も、4,4′−ジアミノジフェニルエーテル、4,4′
−ジアミノジフェニルメタン、4,4′−ジアミノ−
3,3′,5,5′−テトラメチルジフェニルエーテ
ル、4,4′−ジアミノ−3,3′,5,5′−テトラ
メチルジフェニルメタン、4,4′−ジアミノ−3,
3′,5,5′−テトラエチルジフェニルエーテル、
2,2′−[4,4′−ジアミノ−3,3′,5,5′
−テトラメチルジフェニル]プロパン、メタフェニレン
ジアミン、パラフェニレンジアミン、3,3′−ジアミ
ノジフェニルスルフォン、ピペラジン、ヘキサメチレン
ジアミン、ヘプタメチレンジアミン、テトラメチレンジ
アミン、p−キシレンジアミン、m−キシレンジアミ
ン、3−メチルヘプタメチレンジアミン、1,3−ビス
(3−アミノプロピル)テトラメチルジシロキサン等を
使用でき、これらを組み合わせて用いることもできる。The resin having the above repeating unit is produced by reacting an aromatic dicarboxylic acid, an aromatic tricarboxylic acid or a reactive acid derivative thereof with a diamine described below. The repeating unit represented by the above general formula (I) is, for example, 2,2-bis [4-
(4-aminophenoxy) phenyl] propane, 2,2
-Bis [3-methyl-4- (4-aminophenoxy) phenyl] propane, 2,2-bis [4- (4-aminophenoxy) phenyl] butane, 2,2-bis [3-methyl-4- ( 4-aminophenoxy) phenyl] butane,
2,2-bis [3,5-dimethyl-4- (4-aminophenoxy) phenyl] butane, 2,2-bis [3,5-
Dibromo-4- (4-aminophenoxy) phenyl] butane, 1,1,1,3,3,3-hexafluoro-2,
2-bis [3-methyl-4- (4-aminophenoxy)
Phenyl] propane, 1,1-bis [4- (4-aminophenoxy) phenyl] cyclohexane, 1,1-bis [4- (4-aminophenoxy) phenyl] cyclopentane, bis [4- (4-aminophenoxy) ) Phenyl]
Sulfone, bis [4- (4-aminophenoxy) phenyl] ether, bis [4- (3-aminophenoxy)
Phenyl] sulfone, 4,4'-carbonylbis (p
-Phenyleneoxy) dianiline, 4,4'-bis (4
It is preferable to use a diamine such as (-aminophenoxy) biphenyl. Among these, 2,2-bis [4- (4-aminophenoxy) phenyl] propane is particularly preferred. The repeating unit represented by the general formula (II) may be a diamine such as 1,3-bis (3-
Aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 4,4 '-[1,3-phenylenebis (1-methylethylidene)] Bisaniline, 4,
It is produced using a diamine such as 4 '-[1,4-phenylenebis (1-methylethylidene)] bisaniline and 3,3'-[1,3-phenylenebis (1-methylethylidene)] bisaniline. In addition to the above reactive components, 4,4'-diaminodiphenyl ether, 4,4 '
-Diaminodiphenylmethane, 4,4'-diamino-
3,3 ', 5,5'-tetramethyldiphenyl ether, 4,4'-diamino-3,3', 5,5'-tetramethyldiphenylmethane, 4,4'-diamino-3,
3 ', 5,5'-tetraethyldiphenyl ether,
2,2 '-[4,4'-diamino-3,3', 5,5 '
-Tetramethyldiphenyl] propane, metaphenylenediamine, paraphenylenediamine, 3,3'-diaminodiphenylsulfone, piperazine, hexamethylenediamine, heptamethylenediamine, tetramethylenediamine, p-xylenediamine, m-xylenediamine, 3- Methylheptamethylenediamine, 1,3-bis (3-aminopropyl) tetramethyldisiloxane and the like can be used, and these can be used in combination.
【0022】芳香族ジカルボン酸としては、芳香族環に
2個のカルボキシル基が結合したものであり、芳香族ト
リカルボン酸は芳香族環に3個のカルボキシル基が結合
し、かつ3個のカルボキシル基のうち2個は隣接炭素原
子に結合しているものが好ましい。また上記の芳香族環
はヘテロ原子が導入されたものでもよく、あるいは芳香
族環同士がアルキレン基、酸素またはカルボニル基を介
して結合されてもよい。さらに、上記の芳香族環はアル
コキシ基、アリルオキシ基、アルキルアミノ基、ハロゲ
ン等の縮合反応に関与しない置換基が導入されていても
よい。The aromatic dicarboxylic acid is one having two carboxyl groups bonded to an aromatic ring, and the aromatic tricarboxylic acid is one having three carboxyl groups bonded to an aromatic ring and three carboxyl groups. Are preferably bonded to adjacent carbon atoms. Further, the aromatic ring may have a heteroatom introduced therein, or the aromatic rings may be bonded to each other via an alkylene group, oxygen or a carbonyl group. Further, a substituent which does not participate in the condensation reaction such as an alkoxy group, an allyloxy group, an alkylamino group, and a halogen may be introduced into the aromatic ring.
【0023】芳香族ジカルボン酸としては、例えばテレ
フタル酸、イソフタル酸、4,4′−ジフェニルエーテ
ルジカルボン酸、4,4′−ジフェニルスルホンジカル
ボン酸、4,4′−ジフェニルジカルボン酸、1,5−
ナフタレンジカルボン酸等を挙げることができるが、テ
レフタル酸とイソフタル酸が入手容易で廉価であるから
好ましい。なお、芳香族ジカルボン酸の反応性誘導体と
は、上記の芳香族ジカルボン酸のジハイドライド、ジブ
ロマイド、ジエステル等を意味する。芳香族トリカルボ
ン酸としては、トリメリット酸、3,3′,4−ベンゾ
フェノントリカルボン酸、2,3,4′−ジフェニルト
リカルボン酸、2,3,6−ピリジントリカルボン酸、
3,4,4′−ベンズアニリドトリカルボン酸、1,
4,5−ナフタリントリカルボン酸、2′−クロロベン
ズアニリド−3,4,4′−トリカルボン酸等が好まし
い。また、上記芳香族トリカルボン酸の反応性誘導体と
は、上記の芳香族トリカルボン酸の酸無水物、ハライ
ド、エステル、アミド、アンモニウム塩などを意味す
る。Examples of the aromatic dicarboxylic acid include terephthalic acid, isophthalic acid, 4,4'-diphenyl ether dicarboxylic acid, 4,4'-diphenyl sulfone dicarboxylic acid, 4,4'-diphenyl dicarboxylic acid, 1,5-
Although naphthalenedicarboxylic acid and the like can be mentioned, terephthalic acid and isophthalic acid are preferred because they are easily available and inexpensive. The reactive derivative of the aromatic dicarboxylic acid means the above-mentioned aromatic dicarboxylic acid dihydride, dibromide, diester and the like. As aromatic tricarboxylic acids, trimellitic acid, 3,3 ′, 4-benzophenone tricarboxylic acid, 2,3,4′-diphenyltricarboxylic acid, 2,3,6-pyridine tricarboxylic acid,
3,4,4'-benzanilide tricarboxylic acid, 1,
Preferred are 4,5-naphthalenetricarboxylic acid, 2'-chlorobenzanilide-3,4,4'-tricarboxylic acid and the like. The reactive derivative of the aromatic tricarboxylic acid means an acid anhydride, a halide, an ester, an amide, an ammonium salt, or the like of the aromatic tricarboxylic acid.
【0024】芳香族トリカルボン酸の酸無水物として
は、トリメリット酸無水物、トリメリット酸無水物モノ
クロライド、1,4−ジカルボキシ−3−N,N−ジメ
チルカルバモイルベンゼン、1,4−ジカルボメトキシ
−3−カルボキシベンゼン、1,4−ジカルボキシ−3
−カルボフェノキシベンゼン、2,6−ジカルボキシ−
3−カルボメトキシピリジン、1,6−ジカルボキシ−
5−カルバモイルナフタリン、上記芳香族トリカルボン
酸塩類とアンモニア、ジメチルアミン、トリメチルアミ
ン等からなるアンモニウム塩などが好ましい。これらの
うち、トリメリット酸無水物およびトリメリット酸無水
物モノクロライドが入手が容易で廉価であるため好まし
い。The acid anhydrides of aromatic tricarboxylic acids include trimellitic anhydride, trimellitic anhydride monochloride, 1,4-dicarboxy-3-N, N-dimethylcarbamoylbenzene, 1,4-dicarboxylic acid Carbomethoxy-3-carboxybenzene, 1,4-dicarboxy-3
-Carbophenoxybenzene, 2,6-dicarboxy-
3-carbomethoxypyridine, 1,6-dicarboxy-
Preferred are 5-carbamoylnaphthalene, an ammonium salt of the above aromatic tricarboxylates and ammonia, dimethylamine, trimethylamine and the like. Of these, trimellitic anhydride and trimellitic anhydride monochloride are preferred because they are easily available and inexpensive.
【0025】本発明においては、芳香族ジカルボン酸、
芳香族トリカルボン酸またはこれらの反応性誘導体は、
ジアミンの総量100モル%に対して総量で80〜12
0モル%使用するのが好ましく、95〜105モル%使
用するのがより好ましい。ジアミン100モル%に対し
て芳香族ジカルボン酸、芳香族トリカルボン酸またはこ
れらの反応性誘導体が80モル%未満または120モル
%を超えると、分子量、機械強度、耐熱性などが低下す
る傾向がある。In the present invention, an aromatic dicarboxylic acid,
Aromatic tricarboxylic acids or reactive derivatives thereof,
80 to 12 in total with respect to 100 mol% of diamine in total
It is preferably used in an amount of 0 mol%, more preferably 95 to 105 mol%. When the amount of the aromatic dicarboxylic acid, the aromatic tricarboxylic acid, or the reactive derivative thereof is less than 80 mol% or more than 120 mol% with respect to 100 mol% of the diamine, the molecular weight, mechanical strength, heat resistance and the like tend to decrease.
【0026】本発明に使用される有機溶剤としては、ベ
ンゼン、トルエン、キシレン等の芳香族溶剤;アセト
ン、メチルエチルケトン、メチルイソブチルケトン、シ
クロヘキサノン等のケトン系溶剤;ジエチルエーテル、
イソプロピルエーテル、テトラヒドロフラン、ジオキサ
ン、エチレングリコールジメチルエーテル、エチレング
リコールジエチルエーテル、ジエチレングリコールジメ
チルエーテル、ジエチレングリコールジエチルエーテル
等のエーテル系溶剤;酢酸エチル、酢酸−n−プロピ
ル、酢酸イソプロピル、酢酸−n−ブチル、エチレング
リコールモノメチルエーテルアセタート、エチレングリ
コールモノエチルエーテルアセタート、エチレングリコ
ールモノブチルエーテルアセタート、ジエチレングリコ
ールモノメチルエーテルアセタート、ジエチレングリコ
ールモノメチルエーテルアセタート、プロピレングリコ
ールモノメチルエーテルアセタート、プロピレングリコ
ールモノメチルエーテルアセタート、プロピレングリコ
ールモノエチルエーテルアセタート、γ−ブチロラクト
ン等のエステル系溶剤;ジメチルホルムアミド、ジメチ
ルアセトアミド、N−メチルピロリドン等のアミド系溶
剤が挙げられる。これらの溶剤は、ペースト作製時の樹
脂の溶解またはペーストの粘度調整に用いられる。ま
た、ペーストを作製する際には、これらの有機溶剤を単
独でまたは2種以上組み合わせた溶剤として用いられ
る。The organic solvent used in the present invention includes aromatic solvents such as benzene, toluene and xylene; ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone; diethyl ether;
Ether solvents such as isopropyl ether, tetrahydrofuran, dioxane, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether; ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate, ethylene glycol monomethyl ether Acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl acetate Ruasetato, ester solvents such γ- butyrolactone; dimethylformamide, dimethylacetamide, amides solvents such as N- methylpyrrolidone. These solvents are used for dissolving the resin when preparing the paste or adjusting the viscosity of the paste. In preparing a paste, these organic solvents are used alone or in combination of two or more.
【0027】有機溶剤の添加量は、熱可塑性樹脂100
重量部に対して、75〜4600重量部の範囲で用いる
ことが好ましく、より好ましくは125〜3060重量
部とされる。溶剤の添加量が75重量部未満では樹脂が
溶解しにくく、4600重量部を超えると、樹脂粘度が
著しく低下し、ペーストとした場合に塗膜形成能が低下
する傾向がある。本発明の導電性ペースト組成物は、例
えば、(A)導電性粉末200〜2400重量部、
(B)熱可塑性樹脂100重量部及び(C)溶剤75〜
4600重量部を混合し、らいかい機、3本ロール、ボ
ールミル、ディスパー等で混練分散することにより製造
することができる。The amount of the organic solvent added is 100
It is preferably used in the range of 75 to 4600 parts by weight, more preferably 125 to 3060 parts by weight with respect to parts by weight. If the amount of the solvent is less than 75 parts by weight, the resin is difficult to dissolve, and if it exceeds 4600 parts by weight, the viscosity of the resin is remarkably reduced, and when a paste is used, the ability to form a coating film tends to be reduced. The conductive paste composition of the present invention comprises, for example, (A) 200 to 2400 parts by weight of a conductive powder,
(B) 100 parts by weight of thermoplastic resin and (C) solvent 75 to
It can be manufactured by mixing 4600 parts by weight and kneading and dispersing the mixture with a mill, a three-roll mill, a ball mill, a disper or the like.
【0028】本発明の導電性ペースト組成物を製造する
際に、フィラの分散性および塗布性を向上させるために
分散剤やカップリング剤を添加使用してもよい。分散剤
としては、飽和脂肪酸としては炭素数16〜20のパル
チミン酸、ステアリン酸等が、不飽和脂肪酸としては、
炭素数16〜18のオレイン酸、リノレン酸等が用いら
れ、これらの金属塩として、ナトリウム、カリウム、カ
ルシウム、亜鉛、銅等の金属との塩が用いられる。これ
らの分散剤の配合量は、樹脂100重量部に対して通常
0.2〜240重量部とされ、2〜120重量部の範囲
が好ましい。分散剤の配合量が0.2重量部未満であれ
ば、導電性粉末の分散性が低下し、240重量部を超え
ると、塗膜の導電性が低下し、基材との密着性が低下す
る傾向がある。In producing the conductive paste composition of the present invention, a dispersing agent or a coupling agent may be added to improve the dispersibility and coating property of the filler. As the dispersant, saturated fatty acids such as palmitic acid and stearic acid having 16 to 20 carbon atoms, and unsaturated fatty acids as
Oleic acid, linolenic acid and the like having 16 to 18 carbon atoms are used, and as these metal salts, salts with metals such as sodium, potassium, calcium, zinc and copper are used. The amount of these dispersants is usually 0.2 to 240 parts by weight, preferably 2 to 120 parts by weight, based on 100 parts by weight of the resin. If the amount of the dispersant is less than 0.2 parts by weight, the dispersibility of the conductive powder decreases, and if it exceeds 240 parts by weight, the conductivity of the coating film decreases, and the adhesion to the substrate decreases. Tend to.
【0029】カップリング剤としては、ビニルメトキシ
シラン、ビニルトリエトキシシラン、ビニルトリス(β
−メトキシエトキシ)シラン、β−(3,4−エポキシ
シクロヘキシル)エチルトリメトキシシラン、γ−グリ
シドキシプロピルトリメトキシシラン、γ−グリシドキ
シプロピルメチルジエトキシシラン、N−β−(アミノ
エチル)−γ−アミノプロピルメチルジメトキシシラ
ン、γ−アミノプロピルトリエトキシシラン、N−フェ
ニル−γ−アミノプロピルトリメトキシシラン、γ−メ
ルカプトプロピルトリメトキシシラン等のシランカップ
リング剤や、チタネート系カップリング剤、アルミネー
ト系カップリング剤、ジルコアルミネート系カップリン
グ剤等が使用でき、上記の熱可塑性樹脂100重量部に
対して30重量部以下の添加量で添加することが好まし
い。本発明の導電性ペースト組成物を用いた電子部品と
しては、アルミ電解コンデンサ、タンタル固体電解コン
デンサ、セラミックコンデンサ等の電極材料、スクリー
ン印刷によって各種基板上に形成される導電回路、IC
カード内に形成されるアンテナ用回路等の導電回路形成
部品などがある。本発明の導電性ペースト組成物により
形成された塗膜は、耐マイグレーション特性に優れ、使
用される電子部品は耐湿信頼性に富む特長を有する。As coupling agents, vinylmethoxysilane, vinyltriethoxysilane, vinyltris (β
-Methoxyethoxy) silane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, N-β- (aminoethyl) Silane coupling agents such as -γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, and titanate-based coupling agents; An aluminate-based coupling agent, a zirco-aluminate-based coupling agent, or the like can be used, and it is preferable to add it in an amount of 30 parts by weight or less based on 100 parts by weight of the thermoplastic resin. Electronic components using the conductive paste composition of the present invention include electrode materials such as aluminum electrolytic capacitors, tantalum solid electrolytic capacitors, and ceramic capacitors, conductive circuits formed on various substrates by screen printing, and ICs.
There is a conductive circuit forming part such as an antenna circuit formed in the card. The coating film formed from the conductive paste composition of the present invention has excellent migration resistance properties, and the electronic components used have features of high moisture resistance reliability.
【0030】[0030]
【実施例】次に本発明を実施例により更に詳しく説明す
るが、本発明はこれらに限定されるものではない。 合成例 温度計、攪拌機、窒素導入管および冷却管を装着した1
000mlの四つ口フラスコ中に窒素ガス雰囲気下でジ
アミンとしてBAPP(2,2−ビス[4−(4−アミ
ノフェノキシ)フェニル]プロパン)100g(0.2
4モル)をN−メチル−2−ピロリドン400gに溶解
した。この溶液を−10℃に冷却し、この温度でイソフ
タル酸ジクロライド49.5g(0.24モル)を温度
が−5℃を超えないように添加した。その後プロピレン
オキシド56.6gを添加し室温で3時間攪拌を続け
た。反応液を純水中に投入して重合体を単離した。これ
を乾燥した後、再びN−メチル−2−ピロリドンに溶解
し、これを純水中に投入してポリアミド重合体を精製し
た。EXAMPLES Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples. Synthesis example 1 equipped with thermometer, stirrer, nitrogen introduction pipe and cooling pipe
BAPP (2,2-bis [4- (4-aminophenoxy) phenyl] propane) as a diamine 100 g (0.2
4 mol) was dissolved in 400 g of N-methyl-2-pyrrolidone. The solution was cooled to −10 ° C. and at this temperature 49.5 g (0.24 mol) of isophthalic dichloride were added so that the temperature did not exceed −5 ° C. Thereafter, 56.6 g of propylene oxide was added, and stirring was continued at room temperature for 3 hours. The reaction solution was put into pure water to isolate the polymer. After drying, it was dissolved again in N-methyl-2-pyrrolidone, and this was poured into pure water to purify the polyamide polymer.
【0031】実施例1 合成例で得たポリアミド重合体100重量部にジエチレ
ングリコールジメチルエーテル1110重量部を加え溶
解したワニスに銀粉(徳力化学社製 製品名TC−20
V,TC−25A,TCG−7V,TCG−1,TCG
−5,TCG−131及びデグサジャパン製 製品名
SF67,SF69,SF7,SF7A,SFR−Ag
を用い乾式分級混合し平均粒径9μmに調整)および鍍
銀銅粉(日立化成工業社製 MA05K(鍍銀量;銅粉
100重量部に対して銀2重量部)を乾式分級し平均粒
径9μmに調整)を表1に示す割合で配合し、30分間
ディスパーで分散しペーストを得た。また、分散直後に
目視によりフィラーの凝集・分離があるかどうか確認し
た。得られた組成物を脱泡した後、ペーストをスクリー
ン印刷法にて一定量スライドガラス上に塗布し(塗布面
積:1cm×7.5cm 塗布圧:40±10μm)、
バッチ式乾燥炉で180℃、1時間乾燥させて乾燥塗膜
を得た。得られた乾燥塗膜についてダブルブリッジ式抵
抗測定器(横河電気社製)により、体積抵抗率の測定を
行った。また、体積抵抗率の測定に用いた乾燥塗膜を用
いてマイグレーション測定を行った。マイグレーション
特性は乾燥塗膜の中央に間隔2mmの電極を形成し、電
極全体を覆うように純水を滴下した後、両端に7Vの電
圧を印加し、銀が移行して電極間が短絡するまでの時間
を測定した。体積抵抗率とマイグレーション特性結果を
表2に示す。次に、この導電性ペースト組成物を陰極に
用いてタンタルコンデンサを作製し、耐湿信頼性試験
(PCT試験:121℃2atmの飽和水蒸気圧下に4
8時間放置、試験素子数20)を行いコンデンサの特性
(静電容量;Cap、誘電正接;tanδ、等価直列抵
抗;ESR、漏れ電流;LC)を測定した。その結果を
表2に示す。Example 1 To 100 parts by weight of the polyamide polymer obtained in the synthesis example, 1110 parts by weight of diethylene glycol dimethyl ether was added and dissolved, and varnish was dissolved in silver powder (product name: TC-20, manufactured by Tokuri Chemical Co., Ltd.).
V, TC-25A, TCG-7V, TCG-1, TCG
-5, TCG-131 and product name made by Degussa Japan
SF67, SF69, SF7, SF7A, SFR-Ag
And dry-classifying the mixture to adjust the average particle size to 9 μm and silver-plated copper powder (MA05K manufactured by Hitachi Chemical Co., Ltd. (silver plating amount: 2 parts by weight of silver with respect to 100 parts by weight of copper powder)). (Adjusted to 9 μm) in the proportions shown in Table 1 and dispersed with a disper for 30 minutes to obtain a paste. In addition, immediately after the dispersion, it was visually confirmed whether or not the filler was aggregated or separated. After defoaming the obtained composition, a predetermined amount of the paste was applied on a slide glass by a screen printing method (application area: 1 cm × 7.5 cm, application pressure: 40 ± 10 μm),
The coating was dried at 180 ° C. for 1 hour in a batch drying oven to obtain a dried coating film. The volume resistivity of the obtained dried coating film was measured with a double bridge resistance meter (manufactured by Yokogawa Electric Corporation). In addition, migration was measured using the dried coating film used for measuring the volume resistivity. The migration characteristics are as follows. An electrode with a spacing of 2 mm is formed in the center of the dried coating film, pure water is dropped so as to cover the entire electrode, and a voltage of 7 V is applied to both ends. Was measured. Table 2 shows the results of volume resistivity and migration characteristics. Next, a tantalum capacitor was prepared using this conductive paste composition as a cathode, and subjected to a humidity resistance test (PCT test: 121 ° C. under a saturated steam pressure of 2 atm.
After leaving for 8 hours, the number of test elements was 20), and the characteristics (capacitance; Cap, dielectric loss tangent; tan δ, equivalent series resistance; ESR, leakage current; LC) of the capacitor were measured. Table 2 shows the results.
【0032】実施例2 用いた銀粉の平均粒径の調整を0.5μm、鍍銀銅粉の
平均粒径の調整を0.5μmとした以外は、実施例1と
同様とした。 実施例3 用いた銀粉の平均粒径の調整を4μm、鍍銀銅粉の平均
粒径の調整を4μmとした以外は、実施例1と同様とし
た。 実施例4 用いた銀粉の平均粒径の調整を12μm、鍍銀銅粉の平
均粒径の調整を12μmとした以外は、実施例1と同様
とした。 実施例5 用いた銀粉の平均粒径の調整を5μm、鍍銀銅粉の平均
粒径の調整を9μmとした以外は、実施例1と同様とし
た。Example 2 The procedure of Example 1 was repeated except that the average particle size of the silver powder used was adjusted to 0.5 μm, and the average particle size of the silver-plated copper powder was adjusted to 0.5 μm. Example 3 The same operation as in Example 1 was performed except that the adjustment of the average particle diameter of the used silver powder was 4 μm and the adjustment of the average particle diameter of the silver-plated copper powder was 4 μm. Example 4 Same as Example 1 except that the adjustment of the average particle size of the used silver powder was 12 μm and the adjustment of the average particle size of the silver-plated copper powder was 12 μm. Example 5 Example 5 was the same as Example 1 except that the adjustment of the average particle size of the used silver powder was 5 μm and the adjustment of the average particle size of the silver-plated copper powder was 9 μm.
【0033】実施例6 用いた銀粉の平均粒径の調整を4μm、鍍銀銅粉の平均
粒径の調整を12μmとした以外は、実施例1と同様と
した。 実施例7 用いた鍍銀銅粉の鍍銀量が、銅粉100重量部に対して
銀が0.5重量部であること以外は実施例1と同様とし
た。 実施例8 用いた鍍銀銅粉の鍍銀量が、銅粉100重量部に対して
銀が20重量部であること以外は実施例1と同様とし
た。 実施例9 導電性粉末の混合比が銀粉1424重量部に対して鍍銀
銅粉が143重量部であること以外は、実施例1と同様
とした。 実施例10 導電性粉末の混合比が銀粉468重量部に対して鍍銀銅
粉が1099重量部であること以外は、実施例1と同様
とした。Example 6 The procedure of Example 1 was repeated except that the average particle size of the silver powder used was adjusted to 4 μm and the average particle size of the silver-plated copper powder was adjusted to 12 μm. Example 7 Example 7 was the same as Example 1 except that the amount of silver of the silver-plated copper powder used was 0.5 part by weight of silver with respect to 100 parts by weight of copper powder. Example 8 The procedure of Example 1 was repeated except that the amount of silver of the silver-plated copper powder used was 20 parts by weight of silver with respect to 100 parts by weight of copper powder. Example 9 Example 9 was the same as Example 1 except that the mixing ratio of the conductive powder was 143 parts by weight of the silver-plated copper powder with respect to 1424 parts by weight of the silver powder. Example 10 The procedure of Example 1 was repeated except that the mixing ratio of the conductive powder was 468 parts by weight of silver powder and 1099 parts by weight of the silver-plated copper powder.
【0034】比較例1 用いた銀粉の平均粒径の調整を0.3μm、鍍銀銅粉の
平均粒径の調整を0.3μmとした以外は、実施例1と
同様とした。 比較例2 用いた銀粉の平均粒径の調整を15μm、鍍銀銅粉の平
均粒径の調整を15μmとした以外は、実施例1と同様
とした。 比較例3 用いた銀粉の平均粒径の調整を3μm、鍍銀銅粉の平均
粒径の調整を18μmとした以外は、実施例1と同様と
した。 比較例4 鍍銀銅粉(ジャパンエナジー社製 商品名 CuAg1
0使用)の形状が球状で、鍍銀量が銅粉100重量部に
対して10重量部であること以外は、実施例1と同様と
した。 比較例5 銀粉を用いず、鍍銀銅粉(三井金属鉱山社製 商品名A
gコートCu powderを使用)の形状が球状で、
鍍銀量が銅粉100重量部に対して2重量部であり配合
量が1566重量部であること以外は、実施例1と同様
とした。Comparative Example 1 The procedure of Example 1 was repeated except that the average particle size of the silver powder used was adjusted to 0.3 μm and the average particle size of the silver-plated copper powder was adjusted to 0.3 μm. Comparative Example 2 The procedure of Example 1 was repeated except that the average particle size of the silver powder used was adjusted to 15 μm and the average particle size of the silver-plated copper powder was adjusted to 15 μm. Comparative Example 3 The procedure of Example 1 was repeated except that the average particle size of the silver powder used was adjusted to 3 μm and the average particle size of the silver-plated copper powder was adjusted to 18 μm. Comparative Example 4 Silver-plated copper powder (product name: CuAg1 manufactured by Japan Energy Co., Ltd.)
0) was spherical, and the amount of silver was 10 parts by weight with respect to 100 parts by weight of copper powder. Comparative Example 5 A silver-plated copper powder (trade name A manufactured by Mitsui Kinzoku Mining Co., Ltd.) was used without using silver powder.
g coat Cu powder) is spherical.
Example 1 was repeated except that the amount of silver plating was 2 parts by weight and the amount of silver was 1566 parts by weight based on 100 parts by weight of copper powder.
【0035】比較例6 銀粉及び鍍銀銅粉を用いず銅粉(三井金属社製 商品名
MFP1300A平均粒径2μm)を用い配合量が1
566重量部であること以外は実施例1と同様とした。COMPARATIVE EXAMPLE 6 Copper powder (trade name: MFP1300A, average particle size: 2 μm, manufactured by Mitsui Kinzoku Co., Ltd.) was used without using silver powder and silver-plated copper powder, and the compounding amount was 1
Except that the amount was 566 parts by weight, it was the same as in Example 1.
【0036】[0036]
【表1】 [Table 1]
【0037】[0037]
【表2】 [Table 2]
【0038】[0038]
【発明の効果】本発明になる導電性ペースト組成物は、
良好な塗布性を有し、その乾燥塗膜は、導電性に優れ、
かつ耐マイグレーション特性に優れ、高い耐湿信頼性の
必要な、電子部品の電極回路等の形成材料として好適で
ある。The conductive paste composition according to the present invention comprises:
Having good coatability, the dried coating film has excellent conductivity,
Further, it is suitable as a material for forming an electrode circuit or the like of an electronic component, which is excellent in migration resistance and requires high moisture resistance reliability.
フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) C08L 79/08 C08L 79/08 Z 81/02 81/02 81/06 81/06 101/00 101/00 H01B 1/00 H01B 1/00 C J Fターム(参考) 4J002 CH071 CH091 CL001 CM041 CN011 CN031 DA076 DA077 EA058 ED028 EE038 EH158 EL058 EP018 EU028 FA016 FA017 FD116 FD117 FD208 GQ02 HA08 5G301 DA03 DA06 DA42 DD01 Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (reference) C08L 79/08 C08L 79/08 Z 81/02 81/02 81/06 81/06 101/00 101/00 H01B 1 / 00 H01B 1/00 CJF term (reference) 4J002 CH071 CH091 CL001 CM041 CN011 CN031 DA076 DA077 EA058 ED028 EE038 EH158 EL058 EP018 EU028 FA016 FA017 FD116 FD117 FD208 GQ02 HA08 5G301 DA03 DA06 DA42 DD01
Claims (6)
及び(C)有機溶剤を必須成分とする導電性ペースト組
成物であって、導電性粉末が平均粒径0.5μm〜12
μmの鱗片状銀粉と平均粒径0.5μm〜12μmの鱗
片状鍍銀銅粉の混合導電性粉末である導電性ペースト組
成物。1. A conductive paste composition comprising (A) a conductive powder, (B) a thermoplastic resin and (C) an organic solvent as essential components, wherein the conductive powder has an average particle size of 0.5 μm to 12 μm.
A conductive paste composition which is a mixed conductive powder of a flaky silver powder of μm and a flaky silver-plated copper powder having an average particle size of 0.5 μm to 12 μm.
鍍銀銅粉が10重量部〜235重量部である請求項1記
載の導電性ペースト組成物。2. The conductive paste composition according to claim 1, wherein the flaky silver-plated copper powder is present in an amount of 10 to 235 parts by weight based on 100 parts by weight of the flaky silver powder.
5〜20重量部である請求項1または2記載の導電性ペ
ースト組成物。3. A silver plating amount of 0.1 part by weight per 100 parts by weight of copper powder.
3. The conductive paste composition according to claim 1, wherein the amount is 5 to 20 parts by weight.
イミド基またはエーテル基を有する樹脂である請求項1
記載、2または3記載の導電性ペースト組成物。4. The method according to claim 1, wherein the thermoplastic resin is an amide group, an ester group,
2. A resin having an imide group or an ether group.
4. The conductive paste composition according to item 2, or 3.
エーテル基を有する熱可塑性樹脂が下記一般式(I)ま
たは(II)で表される繰り返し単位を有する樹脂である
請求項1、2、3または4記載の導電性ペースト組成
物。 【化1】 (式中、R1、R2、R3およびR4はそれぞれ独立に水素
原子、低級アルキル基、低級アルコキシ基またはハロゲ
ン原子を表し、Xは化学結合、−O−、 【化2】 または 【化3】 を表し、ここでR5およびR6はそれぞれ独立して水素原
子、低級アルキル基、トリフルオロメチル基、トリクロ
ロメチル基またはフェニル基を表す。) 【化4】 または 【化5】 (式中、Arは、芳香族の2価の基を、Ar′は芳香族
の3価の基を表す。) 【化6】 (式中、Xは−O−または 【化7】 を表し、ここでR10およびR11はそれぞれ独立に水素原
子、低級アルキル基、トリフルオロメチル基、トリクロ
ロメチル基またはフェニル基を表し、R7、R8およびR
9はそれぞれ独立して低級アルキル基、低級アルコキシ
基またはハロゲン原子を表し、x、yおよびzはそれぞ
れ置換基数を示す0〜4の整数であり、2個のXは同一
でも異なっていてもよく、R7、R8およびR9はそれぞ
れ複数個結合しているときは、各々において、同一でも
異なってもよい)5. The thermoplastic resin having an amide group, an ester group, an imide group or an ether group is a resin having a repeating unit represented by the following general formula (I) or (II). Or the conductive paste composition according to 4. Embedded image (In the formula, R 1 , R 2 , R 3 and R 4 each independently represent a hydrogen atom, a lower alkyl group, a lower alkoxy group or a halogen atom, and X represents a chemical bond, —O—, Or Wherein R 5 and R 6 each independently represent a hydrogen atom, a lower alkyl group, a trifluoromethyl group, a trichloromethyl group or a phenyl group. ) Or (In the formula, Ar represents an aromatic divalent group, and Ar ′ represents an aromatic trivalent group.) (Wherein X is -O- or Wherein R 10 and R 11 each independently represent a hydrogen atom, a lower alkyl group, a trifluoromethyl group, a trichloromethyl group or a phenyl group, and R 7 , R 8 and R
9 each independently represents a lower alkyl group, a lower alkoxy group or a halogen atom, x, y and z are each an integer of 0 to 4 representing the number of substituents, and two Xs may be the same or different , R 7 , R 8 and R 9 may be the same or different when a plurality of each are bonded)
電性ペースト組成物を用いた電子部品。6. An electronic component using the conductive paste composition according to claim 1, 2, 3, 4, or 5.
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003035739A1 (en) * | 2001-10-19 | 2003-05-01 | Hitachi Chemical Co., Ltd. | Electroconductive resin composition and electronic parts using the same |
JP2004168966A (en) * | 2002-11-22 | 2004-06-17 | Hitachi Chem Co Ltd | Conductive resin composition and electronic part by using the same |
JP2006059169A (en) * | 2004-08-20 | 2006-03-02 | Fujitsu Ltd | Touch panel device and manufacturing method thereof |
JP2007227156A (en) * | 2006-02-23 | 2007-09-06 | Sumitomo Electric Ind Ltd | Conductive paste and printed wiring board using the same |
JP2008300637A (en) * | 2007-05-31 | 2008-12-11 | E I Du Pont De Nemours & Co | Conductive paste for solid electrolytic capacitor electrode and method for producing electrode of solid electrolytic capacitor using the conductive paste |
EP1950767A4 (en) * | 2005-09-21 | 2009-10-21 | Nihon Handa Co Ltd | PASTENY SILVER PARTICLE COMPOSITION, PROCESS FOR PRODUCING SOLID SILVER, SOLID SILVER, COMPOUNDING METHOD AND PROCESS FOR MANUFACTURING A CONDUCTOR PLATE |
CN101950596A (en) * | 2010-09-27 | 2011-01-19 | 彩虹集团公司 | Halogen-free low temperature solidified silver paste and preparation method thereof |
KR101038033B1 (en) * | 2007-08-17 | 2011-05-31 | 후지쯔 가부시끼가이샤 | Wiring board, wiring pattern forming method, and manufacturing method of wiring board |
KR20140085732A (en) * | 2012-12-27 | 2014-07-08 | 코오롱글로텍주식회사 | Paste composition for forming electrode containing ag flake, method of preparing the same and electrode using the same |
-
2000
- 2000-06-06 JP JP2000168371A patent/JP2001351436A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003035739A1 (en) * | 2001-10-19 | 2003-05-01 | Hitachi Chemical Co., Ltd. | Electroconductive resin composition and electronic parts using the same |
JP2004168966A (en) * | 2002-11-22 | 2004-06-17 | Hitachi Chem Co Ltd | Conductive resin composition and electronic part by using the same |
JP2006059169A (en) * | 2004-08-20 | 2006-03-02 | Fujitsu Ltd | Touch panel device and manufacturing method thereof |
EP1950767A4 (en) * | 2005-09-21 | 2009-10-21 | Nihon Handa Co Ltd | PASTENY SILVER PARTICLE COMPOSITION, PROCESS FOR PRODUCING SOLID SILVER, SOLID SILVER, COMPOUNDING METHOD AND PROCESS FOR MANUFACTURING A CONDUCTOR PLATE |
JP2007227156A (en) * | 2006-02-23 | 2007-09-06 | Sumitomo Electric Ind Ltd | Conductive paste and printed wiring board using the same |
JP2008300637A (en) * | 2007-05-31 | 2008-12-11 | E I Du Pont De Nemours & Co | Conductive paste for solid electrolytic capacitor electrode and method for producing electrode of solid electrolytic capacitor using the conductive paste |
KR101038033B1 (en) * | 2007-08-17 | 2011-05-31 | 후지쯔 가부시끼가이샤 | Wiring board, wiring pattern forming method, and manufacturing method of wiring board |
CN101950596A (en) * | 2010-09-27 | 2011-01-19 | 彩虹集团公司 | Halogen-free low temperature solidified silver paste and preparation method thereof |
KR20140085732A (en) * | 2012-12-27 | 2014-07-08 | 코오롱글로텍주식회사 | Paste composition for forming electrode containing ag flake, method of preparing the same and electrode using the same |
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