JP2001348268A - Low temperature sintered dielectric material and dielectric - Google Patents
Low temperature sintered dielectric material and dielectricInfo
- Publication number
- JP2001348268A JP2001348268A JP2000167773A JP2000167773A JP2001348268A JP 2001348268 A JP2001348268 A JP 2001348268A JP 2000167773 A JP2000167773 A JP 2000167773A JP 2000167773 A JP2000167773 A JP 2000167773A JP 2001348268 A JP2001348268 A JP 2001348268A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- dielectric material
- low
- temperature
- mass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003989 dielectric material Substances 0.000 title claims abstract description 28
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- NWXHSRDXUJENGJ-UHFFFAOYSA-N calcium;magnesium;dioxido(oxo)silane Chemical compound [Mg+2].[Ca+2].[O-][Si]([O-])=O.[O-][Si]([O-])=O NWXHSRDXUJENGJ-UHFFFAOYSA-N 0.000 description 13
- 229910052637 diopside Inorganic materials 0.000 description 13
- 239000013078 crystal Substances 0.000 description 9
- 238000010304 firing Methods 0.000 description 8
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 239000004014 plasticizer Substances 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- IRIAEXORFWYRCZ-UHFFFAOYSA-N Butylbenzyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCC1=CC=CC=C1 IRIAEXORFWYRCZ-UHFFFAOYSA-N 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000006112 glass ceramic composition Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920001490 poly(butyl methacrylate) polymer Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- SIXWIUJQBBANGK-UHFFFAOYSA-N 4-(4-fluorophenyl)-1h-pyrazol-5-amine Chemical compound N1N=CC(C=2C=CC(F)=CC=2)=C1N SIXWIUJQBBANGK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- RLRMXWDXPLINPJ-UHFFFAOYSA-N dioctan-2-yl benzene-1,2-dicarboxylate Chemical compound CCCCCCC(C)OC(=O)C1=CC=CC=C1C(=O)OC(C)CCCCCC RLRMXWDXPLINPJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920001483 poly(ethyl methacrylate) polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は多層配線基板や回路部品
の作製に用いられ、１０００℃以下の低温で焼結できる
低温焼結誘電体材料と、これを用いて作製した誘電体に
関するものであり、特に高周波回路に十分対応できる低
い誘電率と誘電損失を有する低温焼結誘電体材料と、こ
れを用いて作製した誘電体に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-temperature sintered dielectric material used for producing multilayer wiring boards and circuit components, which can be sintered at a low temperature of 1000.degree. C. or less, and a dielectric material produced using the same. In particular, the present invention relates to a low-temperature sintered dielectric material having a low dielectric constant and a dielectric loss that can sufficiently cope with a high-frequency circuit, and a dielectric material manufactured using the same.
【０００２】[0002]
【従来の技術】配線基板や回路部品の誘電体材料等とし
て従来広く使用されているアルミナセラミックは、焼成
温度が１６００℃と高く、同時焼成できる内部導体材料
としてはモリブデン、タングステン等の高融点金属のみ
である。これらの金属は導体抵抗が高く、伝送損失が大
きくなるという欠点がある。それゆえアルミナセラミッ
ク自身は低誘電損失材料であるものの、銀や銅を内部導
体材料として使用して同時焼成することができないた
め、近年需要が急激に伸びている高周波部品等の用途に
は不向きである。2. Description of the Related Art Alumina ceramic, which has been widely used as a dielectric material for wiring boards and circuit parts, has a high firing temperature of 1600 ° C., and its internal conductor material which can be simultaneously fired is a high melting point metal such as molybdenum and tungsten. Only. These metals have the disadvantage that the conductor resistance is high and the transmission loss increases. Therefore, although alumina ceramic itself is a low dielectric loss material, it cannot be co-fired using silver or copper as an internal conductor material, and is not suitable for applications such as high-frequency components whose demand has rapidly increased in recent years. is there.
【０００３】この欠点を補うために１０００℃以下の温
度で焼成可能なガラスセラミックス材料が開発され実用
化されている。このガラスセラミックス材料は、ガラス
粉末とフィラー粉末からなり、１０００℃以下の温度で
焼成できるので、導体損失の低い銀や銅を内部導体とし
て使用できるという長所がある。In order to make up for this disadvantage, a glass ceramic material which can be fired at a temperature of 1000 ° C. or less has been developed and put into practical use. This glass-ceramic material is composed of a glass powder and a filler powder and can be fired at a temperature of 1000 ° C. or less. Therefore, there is an advantage that silver or copper having low conductor loss can be used as the internal conductor.
【０００４】[0004]
【発明が解決しようとする課題】しかしながらガラスセ
ラミックス材料は、ガラスを高温で溶融し、成形した後
に微粉末化するという複雑なプロセスを経なければなら
ないため、製造コストが高いという問題がある。However, the glass-ceramic material has a problem that the production cost is high because the glass must be subjected to a complicated process of melting glass at a high temperature, forming and then pulverizing the glass.
【０００５】本発明の目的は、１０００℃以下の温度で
焼成できるとともに安価に供給でき、高周波部品用途に
使用可能な低温焼結誘電体材料と、この材料を用いて作
製した誘電体を提供することである。An object of the present invention is to provide a low-temperature sintered dielectric material which can be fired at a temperature of 1000 ° C. or less and can be supplied at a low cost, and which can be used for high-frequency components, and a dielectric material produced using this material. That is.
【０００６】[0006]
【課題を解決するための手段】本発明の低温焼結誘電体
材料は、酸化物に換算して、質量百分率でＳｉＯ2 ２０
〜８０％、ＣａＯ ５〜４０％、ＭｇＯ ５〜３０％、Ｂ
2Ｏ3 １〜１５％、Ａｌ2Ｏ3 ０〜１０％の組成を有し、
本質的にアルカリ金属酸化物を含まないことを特徴とす
る。SUMMARY OF THE INVENTION The low-temperature sintered dielectric material of the present invention is expressed as SiO 2 20 in terms of mass percentage in terms of oxide.
~ 80%, CaO 5 ~ 40%, MgO 5 ~ 30%, B
2 O 3 1~15%, Al 2 O 3 has a 0-10% composition,
It is characterized by containing essentially no alkali metal oxide.
【０００７】また本発明の誘電体は、酸化物に換算し
て、質量百分率でＳｉＯ2 ２０〜８０％、ＣａＯ ５〜
４０％、ＭｇＯ ５〜３０％、Ｂ2Ｏ3 １〜１５％、Ａｌ
2Ｏ3 ０〜１０％の組成を有し、基本的にアルカリ金属
酸化物を含まない低温焼結誘電体用材料粉末を焼結させ
てなり、ディオプサイドが析出してなることを特徴とす
る。The dielectric of the present invention, when converted to oxides, contains, by mass percentage, 20 to 80% of SiO 2 and 5 to 50% of CaO.
40%, 5~30% MgO, B 2 O 3 1~15%, Al
It is characterized in that diopside is deposited by sintering a low-temperature-sintering dielectric material powder having a composition of 2 O 3 0 to 10% and containing essentially no alkali metal oxide. I do.
【０００８】[0008]
【作用】本発明の低温焼結誘電体材料は、セラミックス
原料粉末の混合物であり、１０００℃以下の温度で焼結
する。また焼成すると、ディオプサイド（ＣａＯ・Ｍｇ
Ｏ・２ＳｉＯ2）が析出した誘電体となる。本発明の誘
電体材料の組成を限定した理由を以下に述べる。The low-temperature sintered dielectric material of the present invention is a mixture of ceramic raw material powders and is sintered at a temperature of 1000 ° C. or less. When firing, diopside (CaO.Mg
O.2SiO 2 ) results in a deposited dielectric. The reason for limiting the composition of the dielectric material of the present invention will be described below.
【０００９】ＳｉＯ2は主結晶相であるディオプサイド
の主成分となる。ＳｉＯ2が８０質量％より多いと焼結
温度が１０００℃以上となる。また２０質量％より少な
いとディオプサイド結晶が析出せず、低誘電率、低誘電
損失の誘電体が得られないため、高周波用回路部品に使
用できない。なおＳｉＯ2の好ましい範囲は３０〜５０
％である。SiO 2 is a main component of diopside, which is a main crystal phase. When the content of SiO 2 is more than 80% by mass, the sintering temperature becomes 1000 ° C. or higher. If the content is less than 20% by mass, diopside crystals do not precipitate, and a dielectric having a low dielectric constant and low dielectric loss cannot be obtained, so that it cannot be used for high-frequency circuit components. The preferred range of SiO 2 is 30 to 50.
%.
【００１０】ＣａＯも同じくディオプサイドの主成分と
なる。ＣａＯが４０質量％より多いと焼結温度が１００
０℃以上となる。また５質量％より少ないとディオプサ
イド結晶が析出しない。なおＣａＯの好ましい範囲は１
０〜３０％である。[0010] CaO is also a main component of diopside. If the content of CaO is more than 40% by mass, the sintering temperature becomes 100
It becomes 0 degreeC or more. If less than 5% by mass, diopside crystals do not precipitate. The preferred range of CaO is 1
0 to 30%.
【００１１】ＭｇＯも同じくディオプサイドの主成分と
なる。ＭｇＯが３０質量％より多いと焼結温度が１００
０℃以上となる。また５質量％より少ないとディオプサ
イド結晶が析出しない。なおＭｇＯの好ましい範囲は１
０〜２０％である。MgO is also a main component of diopside. If the content of MgO is more than 30% by mass, the sintering temperature becomes 100
It becomes 0 degreeC or more. If less than 5% by mass, diopside crystals do not precipitate. The preferred range of MgO is 1
0 to 20%.
【００１２】Ｂ2Ｏ3は低温焼結させるための焼結助剤の
役割を果たす。Ｂ2Ｏ3が１５質量％よりも多いと誘電損
失が高くなり好ましくない。また、１質量％よりも少な
いと１０００℃以下で焼結できなくなる。なおＢ2Ｏ3の
好ましい範囲は５〜１２％である。B 2 O 3 serves as a sintering aid for sintering at a low temperature. If B 2 O 3 is more than 15% by mass, the dielectric loss increases, which is not preferable. On the other hand, if the amount is less than 1% by mass, sintering cannot be performed at 1000 ° C. or lower. The preferred range of B 2 O 3 is 5 to 12%.
【００１３】Ａｌ2Ｏ3はディオプサイド結晶に固溶する
成分であり、少量であれば焼結温度を低くする効果があ
る。しかしながら１０質量％を超えると焼結温度が１０
００以上となり、好ましくない。なおＡｌ2Ｏ3の好まし
い範囲は５〜８％である。[0013] Al 2 O 3 is a component that is solid-solved in a diopside crystal, has the effect of lowering the sintering temperature, if a small amount. However, if it exceeds 10% by mass, the sintering temperature becomes 10
00 or more, which is not preferable. The preferred range of Al 2 O 3 is 5 to 8%.
【００１４】また上記組成の他にも、例えば焼結温度を
さらに下げる目的でＺｎＯを２０％まで、耐酸性を向上
させる目的でＴｉＯ2を１０％まで、強度を向上させる
目的でＺｒＯ2を１０％まで添加可能である。In addition to the above composition, for example, ZnO is reduced to 20% in order to further reduce the sintering temperature, TiO 2 is reduced to 10% in order to improve acid resistance, and ZrO 2 is reduced to 10% in order to improve strength. % Can be added.
【００１５】なお本発明の低温焼結誘電体材料は、誘電
損失の値を低く抑えるために、本質的にアルカリ金属酸
化物を含有しないことが重要である。It is important that the low-temperature sintered dielectric material of the present invention essentially does not contain an alkali metal oxide in order to keep the value of dielectric loss low.
【００１６】上記特徴を有する本発明の材料は、グリー
ンシートの形態で使用することができる。The material of the present invention having the above characteristics can be used in the form of a green sheet.
【００１７】グリーンシートとして使用する場合、上記
組成を有するように調合されたセラミックス原料粉末の
混合物からなる誘電体材料と共に、バインダー、可塑剤
等を使用する。When used as a green sheet, a binder, a plasticizer and the like are used together with a dielectric material composed of a mixture of ceramic raw material powders prepared to have the above composition.
【００１８】誘電体材料のグリーンシート中の含有量
は、６０〜８０質量％程度が一般的である。The content of the dielectric material in the green sheet is generally about 60 to 80% by mass.
【００１９】バインダーは、乾燥後の膜強度を高め、ま
た柔軟性を付与する成分であり、その含有量は、５〜３
０質量％程度が一般的である。バインダーとしてはポリ
ブチルメタアクリレート、ポリビニルブチラール、ポリ
メチルメタアクリレート、ポリエチルメタアクリレー
ト、エチルセルロース等が使用可能であり、これらを単
独あるいは混合して使用する。The binder is a component that increases the strength of the film after drying and imparts flexibility.
Generally, it is about 0% by mass. As the binder, polybutyl methacrylate, polyvinyl butyral, polymethyl methacrylate, polyethyl methacrylate, ethyl cellulose and the like can be used, and these can be used alone or in combination.
【００２０】可塑剤は、乾燥速度をコントロールすると
共に、乾燥膜に柔軟性を与える成分であり、その含有量
は０．１〜１０質量％程度が一般的である。可塑剤とし
てはブチルベンジルフタレート、ジオクチルフタレー
ト、ジイソオクチルフタレート、ジカプリルフタレー
ト、ジブチルフタレート等が使用可能であり、これらを
単独あるいは混合して使用する。The plasticizer is a component that controls the drying speed and imparts flexibility to the dried film. The content of the plasticizer is generally about 0.1 to 10% by mass. As the plasticizer, butylbenzyl phthalate, dioctyl phthalate, diisooctyl phthalate, dicapryl phthalate, dibutyl phthalate, and the like can be used, and these can be used alone or in combination.
【００２１】グリーンシートを作製する一般的な方法と
しては、誘電体材料粉末、バインダー及び可塑剤を用意
し、これらに、トルエン等の主溶媒や、イソプロピルア
ルコール等の補助溶媒を添加してスラリーとし、このス
ラリーをドクターブレード法によって、ポリエチレンテ
レフタレート（ＰＥＴ）等のフィルムの上にシート成形
する。シート成形後、乾燥させることによって溶媒や溶
剤を除去し、グリーンシートとすることができる。As a general method for producing a green sheet, a dielectric material powder, a binder and a plasticizer are prepared, and a main solvent such as toluene and an auxiliary solvent such as isopropyl alcohol are added thereto to form a slurry. The slurry is formed into a sheet on a film such as polyethylene terephthalate (PET) by a doctor blade method. After forming the sheet, the solvent and the solvent are removed by drying to obtain a green sheet.
【００２２】次に本発明の誘電体を説明する。Next, the dielectric of the present invention will be described.
【００２３】本発明の誘電体は、上記グリーンシート等
の形態で提供される誘電体材料粉末を９００〜１０００
℃の温度で２０〜１２０分間焼成して焼結させたもので
あり、多層配線基板や回路部品用途で使用される。また
ディオプサイドが主結晶相として析出し、２．４ＧＨｚ
で誘電率が７〜８程度、誘電損失が４〜１２×１０-4程
度と低誘電率、低誘電損失という特徴を有しているた
め、高周波回路部品の誘電体材料として好ましいもので
ある。The dielectric material according to the present invention is obtained by mixing the dielectric material powder provided in the form of the green sheet or the like with 900 to 1000.
It is fired and sintered at a temperature of ° C for 20 to 120 minutes, and is used for multilayer wiring boards and circuit parts. In addition, diopside precipitates as a main crystal phase, and 2.4 GHz
It has a low dielectric constant and a low dielectric loss of about 7 to 8 and a dielectric loss of about 4 to 12 × 10 −4, so that it is preferable as a dielectric material for high-frequency circuit components.
【００２４】[0024]
【実施例】以下、実施例に基づいて本発明を説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below based on embodiments.
【００２５】表１は本発明の実施例（試料Ｎｏ．１〜
５）を、表２は比較例（試料Ｎｏ．６〜８）をそれぞれ
示している。Table 1 shows examples of the present invention (samples No. 1 to No. 1).
5) and Table 2 shows comparative examples (samples Nos. 6 to 8).
【００２６】[0026]
【表１】 [Table 1]
【００２７】[0027]
【表２】 [Table 2]
【００２８】各試料は次のようにして調製した。まず表
の酸化物組成を有するように、酸化物や炭酸塩の原料粉
末を調合し混合した。この混合物を７５０〜８５０℃で
仮焼した後、アルコール中で粉砕した。これを１２０℃
で乾燥させて誘電体材料粉末とした。Each sample was prepared as follows. First, raw material powders of oxides and carbonates were prepared and mixed so as to have the oxide compositions shown in the table. This mixture was calcined at 750 to 850 ° C. and then ground in alcohol. 120 ° C
To obtain a dielectric material powder.
【００２９】次にこの誘電体材料粉末にバインダー（ポ
リブチルメタアクリレート）、可塑剤（ブチルベンジル
フタレート）、溶剤（トルエン）を加え、混練してスラ
リーとし、ドクターブレード法により厚さ０．２ｍｍの
グリーンシートに成形した。さらに作製したグリーンシ
ート６枚を積層圧着して脱脂後、焼成することにより誘
電体を得た。なお焼成温度は、種々の温度で焼成した焼
結体にインクを塗布した後に拭き取り、インクが残らな
い（＝緻密に焼結した）試料のうち最低の温度で焼成し
たものの焼成温度を記載した。また得られた焼結体につ
いて、析出結晶、誘電損失及び誘電率を評価した。結果
を各表に示す。Next, a binder (polybutyl methacrylate), a plasticizer (butylbenzyl phthalate), and a solvent (toluene) are added to the dielectric material powder, kneaded to form a slurry, and a slurry having a thickness of 0.2 mm is formed by a doctor blade method. It was molded into a green sheet. Further, six green sheets thus produced were laminated and pressed, degreased, and then fired to obtain a dielectric. The firing temperature is described as the firing temperature of the sample fired at the lowest temperature among the samples in which the ink is applied to the sintered body fired at various temperatures and then wiped off to leave no ink (= sintered densely). The obtained sintered body was evaluated for precipitated crystals, dielectric loss and dielectric constant. The results are shown in each table.
【００３０】表から明らかなように、実施例の各試料
は、９００〜９８０℃の低温で焼成可能であり、焼成後
にディオプサイド結晶を析出していることが確認され
た。また２．４ＧＨｚの周波数で誘電率が７．０〜７．
８、誘電損失が４〜１２×１０-4であった。As is clear from the table, it was confirmed that each of the samples of the examples could be fired at a low temperature of 900 to 980 ° C., and that diopside crystals were precipitated after firing. The dielectric constant is 7.0 to 7.0 at a frequency of 2.4 GHz.
8. The dielectric loss was 4 to 12 × 10 -4 .
【００３１】一方、比較例である試料Ｎｏ．６は、Ｂ2
Ｏ3成分を含有しないために、焼成温度が１１００℃と
高かった。試料Ｎｏ．７は、ＭｇＯ成分が少ないため
に、ディオプサイドが析出せず、誘電損失が高かった。
試料Ｎｏ．８は、アルカリ金属酸化物成分を含むために
誘電損失が高かった。On the other hand, the sample No. 6 is B 2
Since no O 3 component was contained, the firing temperature was as high as 1100 ° C. Sample No. In No. 7, since the MgO component was small, diopside did not precipitate and the dielectric loss was high.
Sample No. Sample No. 8 had a high dielectric loss because it contained an alkali metal oxide component.
【００３２】なお析出結晶は、焼結体を粉砕し、粉末Ｘ
線回折装置により同定した。誘電率及び誘電損失の測定
は次のようにして行った。まず原料粉末を７×７×７０
ｍｍの大きさにプレス成形し、９００〜１０００℃で焼
成して試料を作製した。この試料を用い、測定周波数
２.４ＧＨｚで空洞共振器摂動法により測定した。The precipitated crystals are obtained by pulverizing a sintered body,
It was identified by a line diffractometer. The measurement of the dielectric constant and the dielectric loss was performed as follows. First, 7 × 7 × 70
A sample was formed by press molding to a size of mm and firing at 900 to 1000 ° C. Using this sample, measurement was performed at a measurement frequency of 2.4 GHz by a cavity resonator perturbation method.
【００３３】[0033]
【発明の効果】本発明の低温焼結誘電体材料を使用すれ
ば、１０００℃以下の焼成温度で緻密な誘電体が得られ
るため、銀、銅を内層導体とした積層セラミックデバイ
スが製造できる。さらにガラス粉末を使用しないため、
製造コストを低く抑えることができ、安価に提供でき
る。According to the low-temperature sintered dielectric material of the present invention, a dense dielectric can be obtained at a firing temperature of 1000 ° C. or less, so that a multilayer ceramic device using silver and copper as inner conductors can be manufactured. Since no glass powder is used,
The manufacturing cost can be kept low and can be provided at low cost.
【００３４】また本発明の誘電体は、ディオプサイドを
析出しており、低誘電損失、低誘電率であることから、
特にＲＦモジュール、マルチチップモジュール等の高周
波回路部品の誘電体として好適である。In the dielectric of the present invention, diopside is deposited and has a low dielectric loss and a low dielectric constant.
In particular, it is suitable as a dielectric for high frequency circuit components such as RF modules and multi-chip modules.
Claims (3)
2 ２０〜８０％、ＣａＯ ５〜４０％、ＭｇＯ ５〜３０
％、Ｂ2Ｏ3 １〜１５％、Ａｌ2Ｏ3 ０〜１０％の組成を
有し、本質的にアルカリ金属酸化物を含まないことを特
徴とする低温焼結誘電体材料。1. An oxide, expressed as a mass percentage of SiO
2 20-80%, CaO 5-40%, MgO 5-30
%, B 2 O 3 1~15% , Al 2 O 3 has a 0-10% composition, essentially low-temperature co-fired dielectric material characterized by containing no alkali metal oxide.
を特徴とする請求項１の低温焼結誘電体材料。2. The low-temperature sintered dielectric material according to claim 1, which is used in the form of a green sheet.
2 ２０〜８０％、ＣａＯ ５〜４０％、ＭｇＯ ５〜３０
％、Ｂ2Ｏ3 １〜１５％、Ａｌ2Ｏ3 ０〜１０％の組成を
有し、基本的にアルカリ金属酸化物を含まない低温焼結
誘電体材料粉末を焼結させてなり、ディオプサイドが析
出してなることを特徴とする誘電体。3. The amount of SiO 2 in terms of mass percentage in terms of oxide.
2 20-80%, CaO 5-40%, MgO 5-30
%, B 2 O 3 1 to 15%, Al 2 O 3 0 to 10%, and is obtained by sintering a low-temperature sintered dielectric material powder basically containing no alkali metal oxide. A dielectric material characterized by depositing a side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000167773A JP2001348268A (en) | 2000-06-05 | 2000-06-05 | Low temperature sintered dielectric material and dielectric |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000167773A JP2001348268A (en) | 2000-06-05 | 2000-06-05 | Low temperature sintered dielectric material and dielectric |
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| Publication Number | Publication Date |
|---|---|
| JP2001348268A true JP2001348268A (en) | 2001-12-18 |
Family
ID=18670885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004076380A1 (en) * | 2003-02-28 | 2004-09-10 | Taiyo Yuden Co., Ltd. | Ceramic composition and ceramic wiring board |
| US6897172B2 (en) | 2002-01-28 | 2005-05-24 | Kyocera Corporation | Dielectric ceramic composition and dielectric ceramics |
| US6939819B2 (en) | 2001-11-05 | 2005-09-06 | Asahi Glass Company, Limited | Glass ceramic composition |
-
2000
- 2000-06-05 JP JP2000167773A patent/JP2001348268A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6939819B2 (en) | 2001-11-05 | 2005-09-06 | Asahi Glass Company, Limited | Glass ceramic composition |
| US6897172B2 (en) | 2002-01-28 | 2005-05-24 | Kyocera Corporation | Dielectric ceramic composition and dielectric ceramics |
| WO2004076380A1 (en) * | 2003-02-28 | 2004-09-10 | Taiyo Yuden Co., Ltd. | Ceramic composition and ceramic wiring board |
| JPWO2004076380A1 (en) * | 2003-02-28 | 2006-06-01 | 太陽誘電株式会社 | Ceramic composition and ceramic wiring board |
| US7176154B2 (en) | 2003-02-28 | 2007-02-13 | Taiyo Yuden Co., Ltd. | Ceramic composition and ceramic wiring board |
| JP4637017B2 (en) * | 2003-02-28 | 2011-02-23 | 太陽誘電株式会社 | Ceramic composition and ceramic wiring board |
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