JP2001332383A - Method of manufacturing organic EL display, method of arranging semiconductor element, method of manufacturing semiconductor device - Google Patents

Abstract

(57) Abstract: An active matrix organic EL display using a transistor with small variation in characteristics (a transistor having a single crystal semiconductor as an active layer) is manufactured at low cost on a large-area transparent substrate. A plurality of microstructure units are formed in parallel on a silicon wafer. This unit is an organic EL element (pixel)
35 drive elements (switching transistor 34, driving transistor 37, capacitor 36). The silicon wafer is divided to form a unit block 39.
This unit block 39 is connected to a glass substrate (display substrate) 52.
At a predetermined position. The driving elements for each pixel 35 are connected by a signal line 31, a power supply line 32, a scanning line 33, and a capacitance line 38.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing an organic EL (electroluminescence) display and a method for arranging semiconductor elements.

[0002]

2. Description of the Related Art An organic EL display device provided with an organic EL element corresponding to a pixel must be capable of emitting light at high luminance, capable of being driven at a low DC voltage, and having a high response.
Since light is emitted by the solid organic film, it has excellent display performance, and can be made thinner, lighter, and lower in power consumption. Therefore, it is expected to replace the liquid crystal display in the future.

In particular, an active matrix type organic EL display in which the driving method is an active matrix method is provided with a transistor and a capacitor for each pixel, so that high brightness and high definition can be achieved and multi-gradation can be achieved. And the size of the display can be increased. FIG. 19 shows an example of an active matrix type organic EL display that has been proposed so far. This figure shows one pixel and driving elements and the like of this pixel arranged around the pixel. In this active matrix type organic EL display, a pixel 3 composed of an organic EL element is used.
The switching transistor 34, the driving transistor 37, and the capacitor 36 are provided for every five. These elements include a signal line 31, a power supply line 32, a scanning line 33, and a capacitance line 38.
Is connected to the drive circuit. Reference numeral 19 denotes the pixel 3
5 electrode. The purpose of using a plurality of transistors is to improve reliability such as improvement of off-state current and reduction of characteristic deterioration due to application of a high voltage to the transistors.

In this active matrix type organic EL display, a pixel is selected by a switching transistor 34, and an organic EL element as a pixel 35 emits light at a set luminance by a driving transistor 37. As these transistors, it has been proposed to use a thin film transistor having a low-temperature polycrystalline silicon film that can be formed on a glass substrate as an active layer in order to form an organic EL display on a transparent large-area substrate. .

The conductance control method (T.S.
himoda, M. Kimura, et al., Proc. Asia Display 98, 2
17, M. Kimura, et al., IEEE Trans. Elec. Dev., 46,
2282 (1999), M. Kimura, et al., Proc.IDW 99, 17
In the organic EL display of 1), the emission intensity of the organic EL element is controlled by changing the electric conductivity of the polycrystalline silicon layer forming the thin film transistor.

In the organic EL display of this type, since the characteristics of the thin film transistor vary, the current supplied to the organic EL element varies, and the uniformity of the light emission luminance may be deteriorated. In order to realize a luminance level of, for example, 256 gradations in a large-area display body by changing the current value of the thin film transistor, the current value of the organic EL element is accurately controlled within 0.5% by a switching element such as a thin film transistor. Need to be controlled by However, in the current transistor using a low-temperature polycrystalline silicon thin film as an active layer, it is difficult to sufficiently control the luminance level of 256 gradations because of a large variation in current value when an intermediate voltage is applied.

On the other hand, a transistor using a single crystal semiconductor as an active layer has little variation in characteristics.
Since it is manufactured by a high-temperature process of 600 ° C. or more, it is difficult to form a large-area transparent substrate on a glass substrate or the like that can be used at present. In addition, an opaque single crystal semiconductor substrate such as a single crystal silicon substrate cannot be used as a substrate of an organic EL display requiring transparency.

In the active matrix type organic EL display having the structure shown in FIG.
Since light from the element is blocked by the four wirings 31 to 33 and 38, the two transistors 34 and 37, and the capacitor 36, the aperture ratio is as small as about 10%. Therefore,
In order to improve the aperture ratio of the active matrix type organic EL display, it is necessary to reduce the area of the thin film transistor or the wiring.

Further, regarding the increase in the area of the display body, the size of a current active matrix type liquid crystal display mounted with an amorphous silicon transistor is limited to about 1 m × 1 m. In the active matrix type organic EL display, a thin film transistor using a low-temperature polycrystalline silicon film as an active layer is used. However, in the conventional manufacturing technology, the size of a manufacturing apparatus such as a vacuum apparatus is limited.
It is considered that the limit is about 1 m × 1 m as in the case of the liquid crystal display.

On the other hand, in an organic EL display having a thin film transistor having a polycrystalline silicon thin film as an active layer, the thin film transistor and the organic EL element are manufactured as follows. First, by the steps shown in FIGS.
A thin film transistor is formed on a glass substrate 11.

The thin film transistor manufacturing process includes:
First, on a glass substrate 11, SiH _FourPECV using
D method and Si_TwoH₆By LPCVD method using
A film of fac silicon is formed. Next, excimer laser
Laser irradiation method or solid-phase growth method
Recrystallize amorphous silicon to make polycrystalline silicon
Film 12. FIG. 20A shows this state. Next
After patterning the polycrystalline silicon film 12,
A gate insulating film 13 is formed, and a film is further formed thereon.
The gate electrode 14 is formed by patterning. FIG.
0 (b) indicates this state.

Next, impurities such as phosphorus and boron are self-aligned with the polycrystalline silicon film 12 using the gate electrode 14.
Type in. As a result, source / drain regions 15 are formed on both sides of the gate electrode 14, and a CMOSFET is formed. Next, a first interlayer insulating film 16 is formed, and after forming a contact hole in the insulating film, a source / drain electrode 17 is formed by film formation and patterning. FIG.
0 (c) indicates this state. Next, the second interlayer insulating film 18
After forming a contact hole in this insulating film,
An ITO electrode (pixel electrode) 19 is formed by film formation and patterning. FIG. 20D shows this state.

Next, as shown in FIG. 21A, an adhesion layer 21 is formed on the second interlayer insulating film 18, and an opening is formed in a pixel region above the ITO electrode (pixel electrode) 19. To form Next, an interlayer 22 is formed on the adhesion layer 21, and an opening is formed on the opening of the adhesion layer 21. Next, a plasma process using oxygen plasma, CF ₄ plasma or the like is performed, so that the ITO electrode (pixel electrode) 19 is formed.
Improves the wettability of the surface of the upper opening. After that, a hole injection layer 23 and a light emitting layer 24 constituting the organic EL element are formed in the opening. These layers are spin-coated,
Liquid phase processes such as squeegee coating method and inkjet method,
Alternatively, it is formed by a vacuum process such as a sputtering method or an evaporation method. JP-A-10-12377 discloses that
It is described that by forming and arranging an organic EL material by an ink-jet method, an organic light-emitting layer having emission colors of red, blue, and green can be arbitrarily patterned for each pixel.

Next, as shown in FIG. 21B, after a metal thin film forming the cathode 25 is formed on the light emitting layer 24, it is sealed with a sealant 26. As the metal for the cathode 25, a metal to which an alkali metal or an alkaline earth metal is added for the purpose of reducing the work function is used. In addition, the adhesion layer 21
Is provided for the purpose of improving the adhesion between the substrate and the interlayer 22 and obtaining an accurate light emitting area. One of the purposes of providing the interlayer layer 22 is that the gate electrode 1
4. To reduce the parasitic capacitance by keeping the cathode 25 away from the source / drain electrodes 17. Another purpose of providing the interlayer layer 22 is to control the wettability of the surface when forming the hole injection layer 23 and the light emitting layer 24 by a liquid phase process so that accurate patterning can be performed. is there.

As described above, in the conventional method of manufacturing an organic EL display element, in order to form a transistor, the formation of a thin film over the entire display substrate and the removal of an unnecessary portion of the thin film forming material by patterning are repeated. I have. In particular, since the thin film forming material of the organic EL element portion and the wiring portion is largely removed, there is room for improvement in effective use of resources.

[0016]

SUMMARY OF THE INVENTION The present invention has been made in view of the problems of the prior art as described above.
A first object of the present invention is to obtain an organic EL display in which a transistor with small variation in characteristics (a transistor using a single crystal semiconductor as an active layer) is formed over a large-sized transparent substrate.

A second object of the present invention is to improve the aperture ratio of an active matrix type organic EL display. A third object of the present invention is to reduce the amount of a thin film forming material removed in a process of manufacturing an organic EL display. A fourth object of the present invention is to provide a large organic EL of 1 m × 1 m or more.
The purpose is to make it possible to easily obtain a display body.

[0018]

In order to solve the above problems, the present invention provides a method of manufacturing an organic EL display having an organic EL element and a semiconductor element for driving the organic EL element on a display substrate. , A step of arranging a unit block having the semiconductor element at a predetermined position on a display substrate is provided. This unit block, for example, by forming a plurality of the semiconductor elements in parallel on a single crystal semiconductor substrate or other substrate,
It is formed by dividing this substrate. Or,
A commercially available unit block may be purchased and used.

In this method, a semiconductor element for driving an organic EL element is not formed directly on a display substrate, but a unit block having the semiconductor element is arranged at a predetermined position on the display substrate. Therefore, by using a unit block in which a semiconductor element is formed over a single crystal semiconductor substrate, a transistor including a single crystal semiconductor as an active layer (a transistor with small variation in characteristics) can be formed over a glass substrate or the like with low heat resistance. Can be arranged. As a result, an organic EL display in which a transistor with small variations in characteristics is formed on a large-area transparent substrate can be obtained.

According to this method, the prepared unit blocks are inspected, and only non-defective products are arranged on the display substrate except for defective products, thereby improving the throughput after the display is formed. This makes it possible to efficiently obtain a highly reliable organic EL display. Further, the size of a transistor using a single crystal semiconductor as an active layer can be smaller than that of a transistor using a low-temperature polycrystalline silicon thin film as an active layer. As a result, the area occupied by the semiconductor element is reduced, and the active matrix organic EL
The aperture ratio of the display body can be improved. In addition, since it is not necessary to use a large-area substrate in the unit block manufacturing process, the size of an apparatus used in a thin film forming process, an etching process, or the like can be reduced.

Further, since the semiconductor element is not formed on the display substrate since the semiconductor element is formed in the unit block, the organic EL element portion and the like for the semiconductor element formation needlessly be used as in the conventional method. The thin film that has been formed and removed is not formed from the beginning. Therefore, the amount of the thin film forming material removed in the manufacturing process of the organic EL display is reduced as compared with the conventional method.

As described above, since the manufacturing apparatus can be reduced in size and the material used in the manufacturing process can be saved, the manufacturing cost of the organic EL display can be reduced. In the present invention, the following three methods can be cited as a method of arranging the unit block at a predetermined position on the display substrate. Further, two or more of these methods may be used in combination. In the first method, a concave portion having a shape conforming to the shape of the unit block is provided at a predetermined position on the display substrate, and the unit block is fitted into the concave portion in the liquid, so that the unit block is moved to the predetermined position on the display substrate. To place.

In the second method, a hole penetrating in the thickness direction is provided at a predetermined position on the display substrate, and the pressure on one surface of the display substrate is set higher than the pressure on the other surface or the hole is formed in the hole. By guiding the unit block to the position of the hole on one surface of the display substrate through the fluid, the unit block is arranged at a predetermined position on the display substrate. In the third method, the unit blocks are guided and arranged at predetermined positions on the display substrate by Coulomb attraction. At this time, a predetermined position of the display substrate is charged by charging the predetermined position of the display substrate and the unit block to electric charges of opposite signs, or by charging one of the predetermined position of the display substrate and the unit block. A Coulomb attraction is generated between the block and the unit block.

In the method of the present invention, it is preferable that the material of the organic EL element is arranged by the ink jet method so as to correspond to the pixel position on the display substrate. Further, it is preferable that the wiring formed over the display substrate be formed by an inkjet method. The ink jet method, as realized in the printing field, can easily arrange a liquid material at a predetermined position even for a display body of, for example, 1 mx 1 m by expanding a movable area of an ink jet head. . On the other hand, in a method of forming an organic EL element and forming a wiring by film formation and patterning by etching or the like, the size of a display body that can be manufactured depends on the size of a vacuum device or the like required for a manufacturing process. Is limited.

The method of the present invention is suitably applied to a case where the driving system is an active matrix system, that is, an active matrix type organic EL display.
In the case of an active matrix type organic EL display, each organic EL element forming a pixel is connected by wiring such as a scanning line, a signal line, and a power supply line. In this case, on the display substrate, scanning lines, signal lines, and power supply lines and terminals for connecting these wirings to the wiring in the unit block are formed in advance, and the unit block is provided on the display substrate. It is preferable that after the terminals for connection to the wiring on the display substrate are formed in advance at the positions where they contact with these terminals when they are arranged, the unit blocks are arranged at predetermined positions on the display substrate. This makes it possible to omit the wiring step after the unit blocks are arranged on the display substrate.

The unit block is composed of a plurality of adjacent organic ELs.
It is preferable to have a plurality of semiconductor elements for driving the elements. As a result, the number of unit blocks arranged in one organic EL display can be reduced, and the cost is reduced. Further, since the number of locations of the unit blocks is reduced, it is possible to reduce erroneous arrangement of the unit blocks and wiring errors when connecting the terminals on the unit block side and the terminals on the display substrate side by wiring.

Further, by setting the positional relationship of a plurality of terminals of a unit block having a plurality of semiconductor elements to line symmetry or point symmetry, wiring errors can be reduced. The following method can be used as a method for arranging the terminals. Each organic block is formed such that the plane shape of the unit block is a polygon, and the rotation is symmetric about the center of the polygon.
A plurality of terminals for the L element are arranged. The planar shape of the unit block is a regular polygon, and a plurality of terminals for each organic EL element are arranged so as to be rotationally symmetric about the center of the regular polygon as a rotation center.

In the method described above, the rotation angle at which the terminal arrangement does not change even when rotated and moved is a value obtained by dividing 360 ° by n (360 ° / n), where n is the number of sides of the regular polygon. That is, for example, when the unit block is rotated by 90 ° when the plane shape of the unit block is square, when rotated by 72 ° when the unit block is a regular pentagon, and 60 ° when the unit block is rotated by 72 °.
When rotated, the terminals are arranged at the same position.

The planar shape of the unit block is rectangular,
A plurality of terminals for each organic EL element are arranged so as to be symmetric with respect to both the center line parallel to the long side and the center line parallel to the short side of the rectangle. The plane shape of the unit block is a rectangle, and the center of this rectangle is the center of rotation and 1
A plurality of terminals for each organic EL element are arranged so that the terminals are arranged at the same position when rotated by 80 °.

The planar shape of the unit block is a polygon, a plurality of terminals for each organic EL element are arranged along each diagonal of the polygon, and the terminal positions on each diagonal are the same for the same terminal. To be placed. The planar shape of the unit block is a regular polygon, a plurality of terminals for each organic EL element are arranged along each diagonal of the regular polygon, and the terminal positions on each diagonal are the same for the same terminal. So that

According to the methods (1) and (2), when the unit block is fitted into the recess formed on the substrate side corresponding to the planar shape of the unit block, the sides of the regular polygon forming the unit block form the regular polygon forming the recess. , The same terminal arrangement is obtained on the substrate. That is, it is not necessary to determine in advance the sides of the regular polygon to be made to correspond to the unit block and the recess, and if the unit block fits in the recess, the terminal arrangement is always matched.

According to the methods (1) and (2), when the unit block is fitted into the recess formed on the substrate side corresponding to the planar shape of the unit block, the long side and the short side of the rectangle forming the unit block form the recess. Regardless of the long side or short side of the rectangle, the same terminal arrangement is provided on the substrate. That is, it is not necessary to determine in advance the sides to be made to correspond to the unit block and the concave portion, and if the unit block fits in the concave portion, the terminal arrangement always matches.

FIGS. 22 (a) to 22 (d) show examples of terminal arrangement by the methods (1) to (4). FIGS. 22 (e) and (f) show
An example of terminal arrangement according to the above method will be described. FIG.
In (e) and (f), an alternate long and short dash line L1 indicates a center line parallel to the long side of the rectangle, and an alternate long and short dash line L2 indicates a center line parallel to the short side of the rectangle. FIG. 22A is also an example of the terminal arrangement according to the method or. In FIG. 22, reference numeral 39 denotes a unit block, and reference numeral T denotes a terminal.

As a method of arranging the unit blocks, a plurality of sets of three adjacent organic EL elements of red light emission, blue light emission, and green light emission are arranged on a display substrate, and three organic EL elements are arranged. There is a method of arranging a unit block having a semiconductor element for driving the element at a position which is the center of three organic EL elements for each set. As a method of arranging the unit blocks, a plurality of sets of six adjacent organic EL elements, two each for red light emission, blue light emission, and green light emission, are arranged on the display substrate as one set. A method of arranging a unit block having a semiconductor element for driving the organic EL element of each of the groups in a position between the six organic EL elements for each set.

According to the number n of organic EL elements (pixels) driven by the semiconductor elements in the unit block, the number of unit blocks arranged in one organic EL display can be reduced to 1 / n. The greater the number n, the greater the effect of reducing the cost, the effect of reducing the arrangement error of the unit blocks, and the effect of reducing the wiring error. The present invention also provides a method of arranging a unit block having a semiconductor element at a predetermined position on a substrate, wherein a hole penetrating in a thickness direction is provided at a predetermined position on the substrate, and a pressure on one side of the substrate is reduced. The pressure is higher than the pressure on the other surface side or a fluid is passed through the hole to guide the unit block to the position of the hole on one surface of the substrate.

According to the present invention, there is also provided a method of arranging a unit block having a semiconductor element at a predetermined position on a substrate, wherein the unit block is guided to a predetermined position on the substrate by Coulomb attraction. Provide a way. At this time, the predetermined position of the substrate and the unit block are charged with electric charges of opposite signs to each other, or the predetermined position of the substrate and one of the unit blocks are charged, so that the predetermined position of the substrate and the unit block are charged. To generate Coulomb attraction.

According to the present invention, there is also provided a method of manufacturing a semiconductor device having a step of arranging a unit block having a semiconductor element at a predetermined position on a substrate, wherein the wiring formed on the substrate is formed by an ink jet method. An apparatus manufacturing method is provided. The present invention also relates to a method for manufacturing a semiconductor device, comprising a step of arranging a unit block having a semiconductor element at a predetermined position on a substrate, wherein a connection terminal between the wiring and the wiring in the unit block of the wiring is provided on the substrate. Are formed in advance, and a unit block is formed in advance at a position in contact with a terminal on the substrate when placed on the substrate, and a unit block is then formed at a predetermined position on the substrate after connection terminals for wiring with the substrate are formed. And a method for manufacturing a semiconductor device, wherein

According to the present invention, there is also provided a method of manufacturing a semiconductor device having a step of arranging a unit block having a plurality of semiconductor elements at a predetermined position on a substrate, wherein the planar shape of the unit block is a polygon, and the center of the polygon is Provided is a method of manufacturing a semiconductor device in which a plurality of terminals for each semiconductor element are arranged so as to be rotationally symmetric about a rotation center. using this method,
Preferably, the polygon is a regular polygon.

According to the present invention, there is also provided a method of manufacturing a semiconductor device, comprising the step of arranging a unit block having a plurality of semiconductor elements at a predetermined position on a substrate, wherein the planar shape of the unit block is rectangular and parallel to a long side of the rectangle. Provided is a method of manufacturing a semiconductor device in which a plurality of terminals for each semiconductor element are arranged so as to be line-symmetric with respect to both a center line and a center line parallel to a short side.

The present invention also relates to a method of manufacturing a semiconductor device, comprising a step of arranging a unit block having a plurality of semiconductor elements at a predetermined position on a substrate, wherein the planar shape of the unit block is a polygon, and each diagonal of the polygon is And a method of manufacturing a semiconductor device in which a plurality of terminals for each semiconductor element are arranged along the same direction, and the terminal positions on each diagonal line are the same for the same terminal. In this method, the polygon is preferably a regular polygon.

As the “semiconductor device” in these methods of manufacturing a semiconductor device, for example, a memory cell and a liquid crystal display are exemplified. Further, the above-described terminal arrangement method described above as a method of manufacturing an organic EL display body can also be applied as a terminal arrangement method of a semiconductor element in this method of manufacturing a semiconductor device. The present invention also provides a method of manufacturing an active matrix type organic EL display in which a light emitting layer sandwiched between at least two electrodes is formed for each pixel, and the light emitting layer is driven by the semiconductor element. Manufacturing the active matrix type organic EL display body, wherein the semiconductor element is cut off from the substrate, divided into unit blocks, and the unit blocks of the semiconductor element are arranged on another substrate. Provide a way.

[0042]

Embodiments of the present invention will be described below. A method of manufacturing an organic EL display according to an embodiment of the present invention will be described with reference to FIGS. FIG.
FIG. 1 is a plan view showing a part of an active matrix type organic EL display manufactured by the method of this embodiment.
FIG. 2 is a sectional view taken along line AA of FIG. 1, and FIG.
It is a B sectional view. FIG. 4 is a diagram illustrating a method for manufacturing a unit block. FIG. 5 is a diagram for explaining a method of arranging unit blocks. FIG. 6 is a sectional view taken along line CC of FIG.

In this display, a pixel 35 composed of an organic EL element and a pixel electrode 19 are arranged at each pixel position.
For each pixel 35, a switching transistor 34, a driving transistor 3
7, a capacity 36 is provided. These elements are connected by a signal line 31, a power supply line 32, a scanning line 33, and a capacitance line 38.
It is connected to a drive circuit arranged on the periphery of the display.

As shown below, this display body is placed in a unit block 39 at a predetermined position on a glass substrate (display substrate) 52.
It is manufactured through the process of arranging. Further, this display has one unit block 39 for each pixel 35. As shown in FIGS. 2 and 3, this unit block 39 includes a switching transistor 3 as a semiconductor element.
4, a driving transistor 37 and a capacitor 36 are formed. Both transistors 34 and 37 are MOSFETs having a gate electrode 1, a gate oxide film 2, and a source / drain region 3. The source / drain region 3
The single crystal silicon substrate 41a is formed of an impurity diffusion layer. The capacitor 36 is composed of the conductive layer 4 formed of an impurity diffusion layer of the single crystal silicon substrate 41a and the insulating layer 5 formed on the conductive layer 4.
And an electrode 6 formed on the insulating layer 5.

In the unit block 39, a wiring 58 connecting the transistors 34 and 37 is also formed. Further, the unit block 39 includes a terminal 39C for connection to the scanning line 33 and a terminal 3C for connection to the signal line 31.
9D, a terminal 39A for connection to the power supply line 32, and a terminal 39B for connection to the capacitance line 38 are formed. Reference numeral 57 denotes an insulating film.

First, as shown in FIG. 4, a plurality of microstructures of the unit block 39 are formed on a silicon wafer (single crystal semiconductor substrate) 41 in parallel. Next, a large number of unit blocks 39 are obtained by dividing the silicon wafer 41 by dividing lines 51. Next, the obtained unit blocks 39 are inspected to remove defective products. On the other hand, FIG.
As shown in (1), the glass substrate (display substrate) 52 is provided with a depression (recess) 54 at a position where the unit block 39 is to be disposed by a process such as etching. The end face of the unit block 39 obtained by the above-described method is obliquely cut along the cleavage plane of the silicon single crystal. Therefore, the inner wall surface of the depression 54 of the glass substrate 52 is formed in a shape conforming to the slope of the unit block 39. Also, the unit block 39
Is cut such that the upper surface (semiconductor element formation surface) side of the wafer is wider than the opposite surface side, and the shape of the depression 54 is adjusted so as to expand toward the upper surface side, so that the unit block 39 fits into the depression 54. It becomes easy to fit.

The glass substrate 52 and the unit block 39 are placed in a liquid 53, and the unit block 39 is placed on the glass substrate 52.
The unit block 39 fits into the recess 54 by flowing along the surface (the surface on which the recess 54 is formed). Thereby, the unit block 39 is arranged at a predetermined position on the glass substrate 52. Next, by forming and patterning a conductive film on the entire surface of the glass substrate 52 including the unit block 39, the signal line 31, the power supply line 32, the scanning line 33, and the capacitor line 38 are formed. Next, an ITO electrode (pixel electrode) 19 is formed.

The unit block 39 includes a peripheral driver circuit for a display such as a shift register and a driver, a memory, and the like.
Functional elements such as an arithmetic logic unit may be formed.
Next, the wirings 31 to 33 and 38 and the pixel electrode 19 are formed.
6 is formed on the entire upper surface of the glass substrate 52 in a state where
After forming the insulating film 20, patterning is performed to form a hole 20a in the pixel region on the pixel electrode 19 as shown in FIG. The hole injection layer 23 and the light emitting layer 24 are formed in the hole 20a. The hole injection layer 23 and the light emitting layer 24 form a pixel (organic EL element) 35.

The hole injection layer 23 is formed, for example, by applying polytetrahydrothiophenylphenylene, which is a precursor of polyphenylvinylene, and then heating it to form polyphenylvinylene. Examples of the material of the light emitting layer 24 include cyanopolyphenylene vinylene as a red light emitting material, polyphenylene vinylene as a blue light emitting material, and polyalkylphenylene as a green light emitting material.

Next, on the light emitting layer 24, Al containing Li
Is formed by performing film formation and patterning, and the entire upper surface of the glass substrate 52 is sealed with a sealant. In FIG. 1, the cathode 25 is omitted. The active matrix type organic EL display obtained in this manner includes a transistor using an active layer of single crystal silicon with little variation in characteristics, and thus includes a transistor using a low-temperature polycrystalline silicon thin film as an active layer. Compared with the conventional display, the variation of the current value when the intermediate voltage is applied is small, and the luminance level of 256 gradations can be sufficiently controlled.

Further, this active matrix type organic EL display has a larger numerical aperture due to a smaller area occupied by semiconductor elements than a conventional display having a transistor using a low-temperature polycrystalline silicon thin film as an active layer. Become. Further, according to the method of this embodiment, a thin film which has been formed and removed in an organic EL element portion and the like for forming a semiconductor element by a conventional method is not formed from the beginning. Therefore, the amount of the thin film forming material removed in the manufacturing process of the organic EL display is reduced as compared with the conventional method.

The hole injection layer 23 and the light emitting layer 24
May be formed by any method of a liquid phase process such as a spin coating method, a squeegee coating method, an inkjet method, or a vacuum process such as a sputtering method or an evaporation method.
It is preferably formed by an inkjet method. As shown in FIG. 7, in the ink jet method, the ink filled area 64 is used.
Is partitioned by the frame 63, and then the ink 62 is ejected from the head 61 toward the ink filling area 64 while moving the head 61 of the ink jet device.
The ink filling region 64 is filled with the ink 62.

When filling the ink-filled area 64 with hydrophilic ink (such as the material of the light-emitting layer 24), the upper part of the frame 63 is made water-repellent, so that the positioning of the head 61 with respect to the ink-filled area 64 is performed. Even if the accuracy is not so high, it is possible to easily fill the ink filling region 64 with the ink 62. As a material of the frame 63, for example, polyimide is used. Frame 63 made of this polyimide
By performing a plasma treatment using oxygen or a fluorocarbon gas, the surface of the frame 63 can be made water-repellent.

The signal line 31, the power supply line 32, the scanning line 3
It is also possible to form wiring such as 3 by an ink jet method. In this case, as the ink 62, a material that is a liquid containing a conductive material and can be solid in the ink filling region 64 due to evaporation of a solvent, heat curing, or the like is used. Such conductive materials include organometallic compounds,
Examples include a metal complex, a conductive organic polymer, a precursor of a conductive organic polymer, a liquid metal, and fine metal particles.

As described above, the hole injection layer 23 and the light emitting layer 24 forming the organic EL element, the signal line 31, the power line 32,
By forming the wiring such as the scanning line 33 by the inkjet method, a large active matrix type organic EL display having a size of 1 m × 1 m or more can be easily obtained. According to the method described below, the unit block 3
The wiring step after arranging 9 on the display substrate 52 can be omitted.

In this method, as shown in FIG. 8, a scanning line 33, a signal line 31, and a power supply line 3 are previously placed on a display substrate 52.
2, and terminals 33a, 31a, and 32 for connection between the capacitance line 38 and the wiring in the unit block 39 of these wirings.
a and 38a are formed in advance. The unit block 39 includes these terminals 33a and 33a when placed on the display substrate 52.
Terminals 39A to 39D for connection with the respective wirings on the display substrate 52 are formed in advance at respective positions that come into contact with 31a, 32a, and 38a. Reference numeral 19A denotes the pixel electrode 19
Terminal.

Thus, when the unit block 39 is arranged at a predetermined position on the display substrate 52 using the unit block 39 and the display substrate 52, the terminals 33a, 31a, 32a, and 38a of the display substrate 52 are Unit block 3
Nine terminals 39A to 39D are in contact with the corresponding terminals. Thus, the unit block 39 is simply disposed at a predetermined position on the display substrate 52, and the unit block 3
The connection between the semiconductor element No. 9 and the wiring of the display substrate 52 is completed.

A method for arranging unit blocks at predetermined positions on a display substrate, which is different from the method shown in FIG. 5, will be described with reference to FIGS. In the method shown in FIG. 9, similarly to the method shown in FIG. 5, the display substrate 52 is provided with a depression 54 having a shape corresponding to the shape of the unit block 39 at the position where the unit block 39 is arranged. In addition, a hole 55 penetrating the display substrate 51 in the thickness direction is provided at the center of the depression 54.

The display substrate 52 and the unit block 39 are placed in a liquid or a predetermined gas atmosphere, and the unit block 39 is dropped on the surface of the display substrate 52 (the surface on which the depression 54 is formed). By raising the display substrate 52 toward the unit block 39, the unit block 39 fits into the recess 54. Thereby, the unit block 39 is arranged at a predetermined position on the glass substrate 52.

In the method shown in FIG. 10, similarly to the method shown in FIG. 5, the display substrate 52 has a depression 5 having a shape corresponding to the shape of the unit block 39 at the position where the unit block 39 is arranged.
4 is provided. In addition to this, at the center of this depression 54,
A hole 55 penetrating the display substrate 51 in the thickness direction is provided.
The display substrate 52 and the unit block 39 are placed in a liquid or an atmosphere of a predetermined gas, and the depression 5 is
By suctioning a liquid or a gas with a vacuum pump from the side opposite to the side where the surface 4 is formed, the pressure on the side where the depression 54 is formed is made higher than the pressure on the side opposite to the side. Thereby, each unit block 39 is guided to the position of the hole 55 and is arranged at a predetermined position on the glass substrate 52.

Further, in the display body formed by the method of FIG. 9 and the method of FIG. 10, since the holes 55 exist at each position where the unit block 39 of the display substrate 52 is arranged,
The wiring from the semiconductor element of the unit block 39 is
From the back. Thus, the area of the wiring existing on the surface (pixel forming surface) side of the organic EL display can be reduced, so that the amount of light emission cutoff by the wiring of the organic EL element can be reduced. Further, the light emitting area of the organic EL element can be increased.

In the method shown in FIG. 11, an electrode 59 is formed at each position of the display substrate 52 where the unit block 39 is to be disposed, and the positively charged unit block 39 is disposed above the display substrate 52. By negatively charging each electrode 59 of the display substrate 52, the unit block 39 is guided to the position of each electrode 59 by Coulomb attraction. Thereby, each unit block 39 is arranged at a predetermined position on the glass substrate 52.

The unit block 39 is charged by using an electrostatic generator (a device that generates static electricity by rubbing a metal part with a belt or the like). Since the thickness of the unit block 39 is usually several μm to several hundred μm, it can be moved by electrostatic force. The atmosphere in which this arrangement is performed may be a vacuum, or may be in an insulating liquid or gas. In this method, if the Coulomb attraction between the unit block 39 and each electrode 59 is not greater than the gravity that causes the unit block 39 to fall freely, the unit block 3
Since 9 is not guided to each electrode 59, the specific gravity of the atmosphere needs to be set larger than a predetermined value.

In the method shown in FIG. 12, utilizing the principle of a laser printer, a unit block 3 is formed by Coulomb attraction.
9 is guided to each position of the display substrate 52 and arranged. That is, the roller R1 for the unit block 39 and the display substrate 5
The two rollers R2 are opposed to each other at a predetermined interval. On the roller R2 for the display substrate 52, electrodes are formed at respective positions corresponding to the respective positions where the unit blocks 39 of the display substrate 52 are arranged.

The roller R1 is positively charged, and the unit block 39 is moved along the roller R1. Each electrode provided on the roller R2 is negatively charged, and the display substrate 52 is moved along the roller R2. Thereby, at the position where both rollers R1 and R2 are closest,
The positively charged unit block 39 jumps to each negatively charged electrode position on the display substrate 52.

As a method of arranging the unit blocks at predetermined positions on the display substrate, in addition to these methods, a method of not forming the depression 54 by the method of FIG. 10, a method of FIG. 9 and a method of FIG.
10, a method combining the method of FIG. 5 and the method of FIG. 11 or FIG. 12, a method combining the method of FIG. 10 and the method of FIG. 11 or FIG. A method in which the method of not forming the depression 54 by the method and the method of FIG. 11 or FIG. 12 are combined.

In the organic EL display of FIG. 1, one pixel 3
5, one unit block 39 is provided.
As shown in FIG. 14, one unit block 39 may be provided for each of the plurality of pixels 35. In the organic EL display of FIG. 13, one unit block 39 is arranged at the center of the four pixel electrodes 19. In the organic EL display of FIG. 14, one unit block 39 is arranged at the center of three pixel electrodes 19.

In the organic EL display of FIG. 13, the plane shape of the unit block 39 is a square.
A plurality of terminals 72a to 72e for four organic EL elements are arranged along one diagonal line. The terminal 72a is a terminal for the signal line 31, the terminal 72b is a terminal for the scanning line 33, the terminal 72c is a terminal for the capacitor line 38, the terminal 72d is a terminal for the power supply line 32, and the terminal 72c.
e is a terminal for the pixel electrode 19. The terminals 72a to 72e on each diagonal line are the same terminals (terminals 72a to 72e).
(Every .about.72e) at the same distance from the intersection of the diagonals.

Therefore, for example, four unit blocks 39 arranged at four positions of the display substrate 52 are arranged in a state where they are rotated by 90 ° about the center of the unit block 39 (the intersection of diagonal lines) as the center of rotation. , The arrangement of the terminals 72a to 72e on the display substrate 52 is the same. Therefore, the signal line 31, the power supply line 32, the scanning line 3
3, when forming wiring such as the capacitance line 38, wiring errors can be reduced.

In the case of a color display, as shown in FIG. 15, for example, a pixel 81 composed of a red-emitting organic EL element, a pixel 82 composed of a green-emitting organic EL element, and a blue Pixel 83 composed of a light emitting organic EL element
Are set adjacent to each other, and many sets are arranged. In addition, the unit blocks 39 for the organic EL elements that form the three pixels 81 to 83 are arranged at a position that is the center of the pixels 81 to 83 for each group. Assuming that the three pixels 35 in FIG. 14 are pixels 81 to 83, FIG. 14 is equivalent to a diagram showing a set of pixels and a unit block for these pixels in FIG.

Also, as shown in FIG. 16, three pixels 81 to 83 are formed as a set of two each two, and six pixels 8 to 83 are formed.
The unit blocks 39 for the organic EL elements, which form 1 to 83,
For each set, the pixels may be arranged at the center of the six pixels 81 to 83. As described above, by forming the semiconductor elements for a plurality of organic EL elements (pixels) in one unit block, the organic EL display element is compared with a case where one unit block is formed for each pixel. It is possible to reduce the cost for fabricating the semiconductor device, reduce the arrangement error of the unit blocks, and reduce the wiring error.

In the above embodiment, the active matrix type organic EL display is described.
The method of the present invention in which a unit block in which a semiconductor element is formed is arranged on a display substrate is also applied to an organic EL display other than the active matrix type. Also, organic EL
In addition to the display, the present invention can be applied to a memory cell as shown in FIG. 17 and a liquid crystal display as shown in FIG.

As shown in FIG. 17, in the memory cell, unit block 3 in which transistor 91 and capacitor 36 are formed is provided.
9 is displayed on the display substrate 5 by any one of the methods shown in FIGS. 5 and 9 to 12 or a method in which these are appropriately combined.
By arranging the memory cell M on the predetermined substrate 50 instead of the memory cell M, the memory cell M can be manufactured. Further, if the same method as that of FIG. 8 is adopted, the wiring step after disposing the unit block 39 on the substrate 50 can be omitted.

In this case, terminals 38 a and 9 for connecting the capacitance line 38, the word line 92, and the bit line 93 to the wiring in the unit block 39 of these wirings are previously provided on the substrate 50.
2a and 93a are formed in advance. In the unit block 39,
When these terminals 38 are arranged on the display substrate 52,
a, 92a, 93a, the display substrate 5
Terminals 94A to 94C for connection with the respective wirings on 2 are formed in advance.

As shown in FIG. 18, in the liquid crystal display, the unit block 39 in which the switching transistor 34, the capacitor 36, and the terminal 96 for connecting the liquid crystal element are formed is replaced by any one of the above-described FIG. 5 and FIGS. The liquid crystal display body L can be manufactured by disposing the liquid crystal display body L on the display substrate 52 by the method described above or a method appropriately combining these. Further, if the same method as that of FIG. 8 is adopted, the wiring step after disposing the unit block 39 on the substrate 50 can be omitted.

In this case, on the display substrate 52 in advance,
Terminals 3 for connecting the scanning lines 33, the signal lines 31, and the capacitance lines 38 to the wirings in the unit block 39 of these wirings
3a, 31a and 38a are formed in advance. Unit block 3
In FIG. 9, terminals 95A to 95C for connecting to the respective wirings on the display substrate 52 are formed in advance at each position where they are in contact with these terminals 33a, 31a and 38a when arranged on the display substrate 52. Keep it.

[0077]

As described above, the organic EL of the present invention
According to the method for manufacturing a display body, an organic EL display body in which a transistor with small variation in characteristics (a transistor using a single crystal semiconductor as an active layer) is formed over a large-sized transparent substrate can be obtained. According to the method for manufacturing an organic EL display of the present invention, an active matrix organic EL display having a high aperture ratio can be obtained.

According to the method of manufacturing an organic EL display of the present invention, the amount of the thin film forming material removed in the process of manufacturing the organic EL display can be reduced, so that the resources can be effectively used and the manufacturing cost can be reduced. . According to the method for manufacturing an organic EL display of the present invention, a large organic EL display having a size of 1 m × 1 m or more can be easily obtained by employing an ink jet method or the like.

Further, according to the method of arranging semiconductor elements of the present invention, it is possible to arrange the unit blocks on the substrate more reliably and easily than the method of arranging the unit blocks in the concave portions of the substrate. Further, according to the method of manufacturing a semiconductor element of the present invention, a semiconductor device having a step of arranging a unit block having a semiconductor element at a predetermined position on a substrate can be easily obtained.

[Brief description of the drawings]

FIG. 1 is a plan view showing a part of an active matrix type organic EL display manufactured by a method for manufacturing an organic EL display according to an embodiment of the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a sectional view taken along line BB of FIG. 1;

FIG. 4 is a diagram illustrating a method of manufacturing an organic EL display according to one embodiment of the present invention, which illustrates a method of manufacturing a unit block.

FIG. 5 is a diagram illustrating a method of manufacturing an organic EL display according to an embodiment of the present invention, which illustrates a method of arranging unit blocks.

FIG. 6 is a sectional view taken along line CC of FIG. 1;

FIG. 7 is a diagram for explaining an inkjet method.

FIG. 8 is a diagram illustrating a method for manufacturing an organic EL display device according to one embodiment of the present invention, in which a wiring step after disposing a unit block on a display substrate can be omitted.

FIG. 9 is a diagram illustrating a method of manufacturing an organic EL display according to an embodiment of the present invention, which illustrates a method of arranging unit blocks.

FIG. 10 is a diagram illustrating a method of manufacturing an organic EL display according to an embodiment of the present invention, which illustrates a method of arranging unit blocks.

FIG. 11 is a diagram illustrating a method of manufacturing an organic EL display according to an embodiment of the present invention, which illustrates a method of arranging unit blocks.

FIG. 12 is a diagram illustrating a method of manufacturing an organic EL display according to an embodiment of the present invention, which illustrates a method of arranging unit blocks.

FIG. 13 is a plan view showing a part of an active matrix type organic EL display in which one unit block is arranged for every four pixels.

FIG. 14 is a plan view showing a part of an active matrix type organic EL display in which one unit block is arranged for every three pixels.

FIG. 15 is a diagram showing an example of the arrangement of pixels and unit blocks in the case of a color display.

FIG. 16 is a diagram showing an example of the arrangement of pixels and unit blocks in the case of a color display.

FIG. 17 is a diagram showing an example in which a method for arranging semiconductor elements according to an embodiment of the present invention is applied to a memory cell.

FIG. 18 is a diagram illustrating an example in which a method for arranging semiconductor elements according to an embodiment of the present invention is applied to a liquid crystal display.

FIG. 19 is a partial plan view showing an example of a conventional active matrix type organic EL display.

FIG. 20 is a diagram illustrating a method of forming a thin film transistor using a low-temperature polycrystalline silicon thin film as an active layer in a conventional method of manufacturing an active matrix type organic EL display.

FIG. 21 is a diagram illustrating a method of forming an organic EL element in a conventional method of manufacturing an active matrix type organic EL display.

FIG. 22 is a diagram illustrating an example of a method of arranging terminals with respect to a unit block.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Gate electrode 2 Gate oxide film 3 Source / drain region 4 Conductive layer 5 Insulating layer 6 Electrode 11 Glass substrate 12 Polycrystalline silicon film 13 Gate insulating film 14 Gate electrode 15 Source / drain region 16 First interlayer insulating film 17 Source / drain Electrode 18 Second interlayer insulating film 19 ITO electrode (electrode for pixel) 20 Insulating film 20a Hole in pixel region 21 Adhesive layer 22 Interlayer layer 23 Hole injection layer 24 Light emitting layer 25 Cathode 26 Sealant 31 Signal line 31a Signal line Terminal 32 Power line 32a Power line terminal 33 Scan line 33a Scan line terminal 34 Switching transistor 35 Pixel made of organic EL element 36 Capacitance 37 Driving transistor 38 Capacity line 38a Capacity line terminal 39 Unit block 39A For connection with power line Terminal 39B for connection with the capacitance line 39 C Terminal for connection with scanning line 39D Terminal for connection with signal line 41 Silicon wafer (single crystal semiconductor substrate) 41a Single crystal silicon substrate 50 Substrate 51 Line dividing semiconductor substrate 52 Glass substrate (display substrate) 53 Liquid 54 Depression (recess) 57 Insulating film 58 Wiring connecting both transistors 59 Electrode 61 Head part of ink jet device 62 Ink 63 Frame body 64 Ink filling area 72a Terminal for signal line 72b Terminal for scanning line 72c For capacitance line Terminal 72d Power line terminal 72e Pixel electrode terminal 81 Pixel (red) 82 Pixel (green) 83 Pixel (blue) 92 Word line 92a Word line terminal 93 Bit line 93a Bit line terminal 94A With capacitance line Connection terminal 94B Word line connection terminal 94C Bit line connection terminal 95A Capacitance line Terminal R1 roller R2 rollers T terminals for connecting terminal 96 the liquid crystal element connected between the connection terminal 95C signal line between the connection terminal 95B scan line

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/336 H05B 33/14 A H05B 33/12 H01L 29/78 627D 33/14 (72) Inventor Inoue Satoshi 3-3-5 Yamato, Suwa-shi, Nagano F-term (reference) in Seiko Epson Corporation 3K007 AB04 BA06 BB07 CA03 DA00 DB03 EB00 FA01 5C094 AA14 AA43 AA44 AA60 BA03 CA19 EA04 EA05 EB02 5F110 AA28 BB02 BB05 DD02 QQ16

Claims (26)

[Claims] 1. A method of manufacturing an organic EL display body comprising an organic EL element and a semiconductor element for driving the organic EL element on a display substrate, wherein a unit block having the semiconductor element is provided on a display substrate. A method for producing an organic EL display, comprising a step of disposing the organic EL display at a position. 2. The method of manufacturing an organic EL display according to claim 1, wherein the unit block is formed by forming a plurality of the semiconductor elements in parallel on a single crystal semiconductor substrate and dividing the substrate. . 3. A concave portion having a shape conforming to the shape of the unit block is provided at a predetermined position of the display substrate, and the unit block is fitted into the concave portion in the liquid, so that the unit block is positioned at the predetermined position of the display substrate. The method for manufacturing an organic EL display according to claim 1, wherein the organic EL display is disposed. 4. A display device, wherein a hole penetrating in the thickness direction is provided at a predetermined position of the display substrate, and the pressure on one surface side of the display substrate is made higher than the pressure on the other surface side or a fluid is passed through the hole to display. 3. The method for manufacturing an organic EL display according to claim 1, wherein the unit block is arranged at a predetermined position on the display substrate by guiding the unit block to the position of the hole on one surface of the display substrate. 5. The method according to claim 4, wherein wiring is performed using the holes. 6. The method of manufacturing an organic EL display according to claim 1, wherein the unit block is guided to a predetermined position on the display substrate by Coulomb attraction. 7. The organic EL display according to claim 1, wherein a material of the organic EL element is arranged by an ink-jet method so as to correspond to a pixel position on the display substrate. Manufacturing method. 8. The method for manufacturing an organic EL display according to claim 1, wherein the wiring formed on the display substrate is formed by an inkjet method. 9. The organic EL device according to claim 1, wherein the driving system is an active matrix system.
Manufacturing method of display body. 10. A display substrate includes a scanning line, a signal line,
And a power supply line and terminals for connecting these wirings to the wiring in the unit block are formed in advance, and the unit block is provided with a display terminal at a position in contact with these terminals when placed on the display substrate. 10. The method for manufacturing an organic EL display according to claim 9, wherein the unit block is arranged at a predetermined position on the display substrate after the terminal for connection with the wiring on the substrate is formed in advance. 11. The method according to claim 9, wherein the unit block has a plurality of semiconductor elements for driving a plurality of adjacent organic EL elements. 12. The organic device according to claim 11, wherein the planar shape of the unit block is a polygon, and a plurality of terminals for each organic EL element are arranged so as to be rotationally symmetric about the center of the polygon. Manufacturing method of EL display. 13. A planar shape of a unit block is a rectangle, and each organic element is symmetric with respect to both a center line parallel to a long side and a center line parallel to a short side of the rectangle.
The method for manufacturing an organic EL display according to claim 11, wherein a plurality of terminals for an L element are arranged. 14. The planar shape of the unit block is a polygon, a plurality of terminals for each organic EL element are arranged along each diagonal of the polygon, and the terminal positions on each diagonal are the same. The method for manufacturing an organic EL display according to claim 11, wherein the organic EL display is arranged to be the same. 15. The polygon according to claim 1, wherein the polygon is a regular polygon.
15. The method for producing an organic EL display according to 2 or 14. 16. A plurality of sets of three adjacent organic EL elements of red light emission, blue light emission, and green light emission are arranged on a display substrate, and a plurality of sets are arranged for driving three organic EL elements. 12. The method of manufacturing an organic EL display according to claim 11, wherein the unit blocks having the semiconductor elements are arranged at a position which is the center of the three organic EL elements for each set. 17. A plurality of sets of six adjacent organic EL elements, two each for red light emission, blue light emission, and green light emission, are arranged on a display substrate, and six organic EL elements are provided. The method of manufacturing an organic EL display according to claim 11, wherein unit blocks each having a semiconductor element to be driven are arranged at positions between six organic EL elements for each set. 18. A method of arranging a unit block having a semiconductor element at a predetermined position on a substrate, wherein a hole penetrating in a thickness direction is provided at a predetermined position on the substrate, and a pressure on one surface side of the substrate is provided. A unit block is guided to a position of the hole on one surface of the substrate by making the pressure higher than the pressure on the other surface side or by passing a fluid through the hole. 19. A method for arranging a semiconductor element at a predetermined position on a substrate, wherein the unit block having a semiconductor element is guided to a predetermined position on the substrate by Coulomb attraction. 20. A method for manufacturing a semiconductor device, comprising a step of arranging a unit block having a semiconductor element at a predetermined position on a substrate, wherein the wiring formed on the substrate is formed by an inkjet method. Method. 21. A method of manufacturing a semiconductor device, comprising a step of arranging a unit block having a semiconductor element at a predetermined position on a substrate, wherein a terminal for connecting a wiring to a wiring of the wiring in the unit block is provided on the substrate. Are formed in advance, and the unit block is located at a position where the unit block contacts a terminal on the substrate when placed on the substrate.
A method for manufacturing a semiconductor device, comprising: forming a terminal for connection with a wiring on a substrate in advance, and then arranging a unit block at a predetermined position on the substrate. 22. A method of manufacturing a semiconductor device, comprising a step of arranging a unit block having a plurality of semiconductor elements at a predetermined position on a substrate, wherein the planar shape of the unit block is a polygon, and the center of the polygon is defined as a rotation center. A method of manufacturing a semiconductor device, in which a plurality of terminals for each semiconductor element are arranged so as to have rotational symmetry. 23. A method for manufacturing a semiconductor device, comprising the step of arranging a unit block having a plurality of semiconductor elements at a predetermined position on a substrate, wherein the planar shape of the unit block is rectangular, and a center line parallel to a long side of the rectangle. And a method of manufacturing a semiconductor device in which a plurality of terminals for each semiconductor element are arranged so as to be line-symmetric with respect to both a center line parallel to a short side. 24. A method of manufacturing a semiconductor device, comprising the step of arranging a unit block having a plurality of semiconductor elements at a predetermined position on a substrate, wherein the planar shape of the unit block is a polygon, and the diagonal line of the polygon is along A method of manufacturing a semiconductor device in which a plurality of terminals for each semiconductor element are arranged and the terminals on diagonal lines are arranged to be the same at the same terminal. 25. The polygon according to claim 2, wherein the polygon is a regular polygon.
25. The method for producing an organic EL display according to 2 or 24. 26. A light emitting layer sandwiched between at least two pixels for each pixel, wherein the light emitting layer is driven by a semiconductor element. Manufacturing the active matrix type organic EL display body, wherein the semiconductor element is cut off from the substrate, divided into unit blocks, and the unit blocks of the semiconductor element are arranged on another substrate. Method.