JP2001284677A - Piezoelectric/electrostrictive element and manufacturing method thereof - Google Patents
Piezoelectric/electrostrictive element and manufacturing method thereofInfo
- Publication number
- JP2001284677A JP2001284677A JP2000098728A JP2000098728A JP2001284677A JP 2001284677 A JP2001284677 A JP 2001284677A JP 2000098728 A JP2000098728 A JP 2000098728A JP 2000098728 A JP2000098728 A JP 2000098728A JP 2001284677 A JP2001284677 A JP 2001284677A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric
- substrate
- electrostrictive
- film
- electrode film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 63
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical group O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000010304 firing Methods 0.000 claims description 21
- 238000001816 cooling Methods 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 16
- 229910009474 Y2O3—ZrO2 Inorganic materials 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- HEPLMSKRHVKCAQ-UHFFFAOYSA-N lead nickel Chemical compound [Ni].[Pb] HEPLMSKRHVKCAQ-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、各種トランスデュ
ーサ、各種アクチュエータ、フィルタ等の周波数領域機
能部品、またディスプレイ等の各種表示デバイス、スピ
ーカ等の発音体、更にマイクロフォン及び超音波センサ
等の広範囲な分野において使用することができる圧電/
電歪素子、及びその製造方法に関する。The present invention relates to a wide range of fields such as frequency domain functional parts such as various transducers, various actuators and filters, various display devices such as displays, sounding bodies such as speakers, and microphones and ultrasonic sensors. Piezo that can be used in
The present invention relates to an electrostrictive element and a method for manufacturing the same.
【0002】[0002]
【従来の技術】圧電/電歪素子は上記のように様々な分
野で使用することが可能であるが、その開示例として
は、振動板として作用するセラミック基板と、その基板
上に設けられた第1の電極膜、圧電/電歪膜及び第2の
電極膜からなる膜型の圧電/電歪作動部から構成される
もの(特開平3−128681号公報)の他、セラミッ
ク基板がキャビティを有し、そのキャビティの底部が薄
肉厚部とされた構造で、圧電/電歪作動部をその薄肉外
表面上に一体化したものが開示されている(特開平5−
49270号公報)。2. Description of the Related Art Piezoelectric / electrostrictive elements can be used in various fields as described above. The disclosed examples include a ceramic substrate acting as a diaphragm and a ceramic substrate provided on the substrate. In addition to a film-type piezoelectric / electrostrictive operating portion comprising a first electrode film, a piezoelectric / electrostrictive film, and a second electrode film (Japanese Patent Laid-Open No. 3-128681), a ceramic substrate has a cavity. Japanese Patent Application Laid-Open No. H05-205686 discloses a structure in which a bottom portion of a cavity has a thin-walled portion and a piezoelectric / electrostrictive operating portion is integrated on the thin outer surface.
No. 49270).
【0003】そのような圧電/電歪素子を構成するセラ
ミック基板としては、一般に酸化イットリウムにて部分
安定化した酸化ジルコニウムを用いたものが知られ(特
開平5−29675号公報、特開平5−97437号公
報、特開平5−270912号公報)ており、圧電/電
歪素子は、基板を例えば上記の酸化ジルコニウムと酸化
イットリウムとの混合物からなる焼結体で形成すると共
に、圧電/電歪膜を例えばジルコン酸チタン酸鉛を主成
分とする材料で形成し、基板の所定位置に下部電極膜、
圧電/電歪膜、上部電極膜の順に各々印刷、焼成して形
成される。そして、圧電/電歪膜を形成する材料として
は、前記ジルコン酸チタン酸鉛を主成分とする材料以外
に、マグネシウムニオブ酸鉛を主成分とする材料、ニッ
ケルニオブ酸鉛を主成分とする材料等がある。また、セ
ラミック基板としては、酸化イットリウム以外に酸化カ
ルシウム、酸化マグネシウム、酸化セリウム等の添加物
により部分安定化させた酸化ジルコニウム基板も使用さ
れる。As a ceramic substrate constituting such a piezoelectric / electrostrictive element, a substrate using zirconium oxide partially stabilized with yttrium oxide is generally known (JP-A-5-29675, JP-A-5-29675). 97437, JP-A-5-270912). In the piezoelectric / electrostrictive element, a substrate is formed of a sintered body made of a mixture of zirconium oxide and yttrium oxide, for example, and a piezoelectric / electrostrictive film is formed. Is formed of a material containing, for example, lead zirconate titanate as a main component, a lower electrode film at a predetermined position on the substrate,
The piezoelectric / electrostrictive film and the upper electrode film are formed by printing and firing in this order. As a material for forming the piezoelectric / electrostrictive film, in addition to the above-mentioned material mainly containing lead zirconate titanate, a material mainly containing lead magnesium niobate and a material mainly containing lead nickel niobate Etc. Further, as the ceramic substrate, a zirconium oxide substrate partially stabilized by additives such as calcium oxide, magnesium oxide, and cerium oxide other than yttrium oxide is also used.
【0004】[0004]
【発明が解決しようとする課題】このように、印刷によ
り形成された圧電/電歪素子は図2の横断面図に示すよ
うに、圧電/電歪パターンをその下部に設けた電極膜パ
ターンより広く形成すると素子の作成が容易であるため
行われているが、このように形成することで、図2
(b)に示すように周囲が下部電極膜からはみ出して基
板との接触部7を形成し、焼成工程において双方の組成
物が互いに反応して、基板1の接触部7の強度に影響を
及ぼし強度低下を生じせしめ、歩留まり向上を妨げる要
因となる。As described above, the piezoelectric / electrostrictive element formed by printing, as shown in the cross-sectional view of FIG. 2, has a structure in which a piezoelectric / electrostrictive pattern is provided below the electrode film pattern. When the element is formed widely, it is easy to manufacture the element.
As shown in (b), the periphery protrudes from the lower electrode film to form a contact portion 7 with the substrate, and in the firing step, both compositions react with each other to affect the strength of the contact portion 7 of the substrate 1. This causes a decrease in strength, which hinders an improvement in yield.
【0005】そこで、本発明はそのような問題点に鑑
み、基板とその上部に印刷形成した圧電/電歪膜とが接
触した状態で焼成しても、基板に影響の出ない圧電/電
歪素子の製造方法を提供し、また振動板として働く基板
の中で最も応力のかかりやすい下部電極膜に覆われてい
ない部位の信頼性を向上させた圧電/電歪素子を提供す
ることを課題とする。In view of the above problems, the present invention provides a piezoelectric / electrostrictive device which does not affect the substrate even if the substrate is fired in a state where the substrate is in contact with the piezoelectric / electrostrictive film printed thereon. An object of the present invention is to provide a method for manufacturing an element, and to provide a piezoelectric / electrostrictive element in which the reliability of a portion of the substrate that functions as a diaphragm that is not covered by the lower electrode film, where stress is most likely to be applied, is improved. I do.
【0006】[0006]
【課題を解決するための手段】本発明者は、歩留まり向
上阻害要因が焼成工程において圧電/電歪材料に含有さ
れる鉛やニオブやチタンが基板に入り込むと共に、基板
外(主に圧電/電歪膜内)に部分安定化に用いられる添
加材料が流出する事により、例えば、添加材料がY2O
3の場合には、基板当接部の組成が当初の組成よりY2
O3が減少し、Y2O3の組成が2.5mol%以下と
なっており、焼成後の冷却過程で正方晶から単斜晶に変
化するT/M変態を起こすことが原因であること、及び
Y2O3組成が2.5mol%以下のときの単斜相率と
基板強度低下の関係を突き止め、この相変態を焼成温度
特性を操作することで無くすことが可能であること、及
びY2O3組成が2.5mol%以下のときのクラック
等が発生しない単斜相率の範囲を見いだしたもので、上
記課題を解決するために、請求項1の発明に係る圧電/
電歪素子の製造方法は、下部電極膜、圧電/電歪膜及び
上部電極膜をジルコニアを主成分とする基板上に順に形
成してなり、該圧電/電歪膜が下部電極膜より広く形成
され、基板に接触している圧電/電歪素子の焼成工程に
おいて、温度を下降する際に強制冷却し、少なくとも3
00℃から150℃までの降温速度を0.5℃/分以上
とすることを特徴とする。尚、この降温速度の制御は添
加材料が酸化カルシウム、酸化マグネシウム、酸化セリ
ウム等の場合でも同様に有効である。このように降温速
度を急峻にすることで、基板と圧電/電歪膜とが接触し
た状態で焼成しても、基板にT/M変態が発生すること
が無く、基板の強度低下を防ぐことができる。The inventor of the present invention has found that the factors that hinder the improvement of the yield include lead, niobium, and titanium contained in the piezoelectric / electrostrictive material entering the substrate during the firing step, and the outside of the substrate (mainly, the piezoelectric / electrolyte). When the additive material used for the partial stabilization flows out into the strained film), for example, the additive material becomes Y2O
In the case of No. 3, the composition of the substrate contact portion is Y2 from the initial composition.
O3 is reduced and the composition of Y2O3 is 2.5 mol% or less, which is caused by T / M transformation from tetragonal to monoclinic in a cooling process after firing, and Y2O3 composition Is less than 2.5 mol%, the relationship between the monoclinic phase ratio and the decrease in substrate strength can be ascertained, and this phase transformation can be eliminated by manipulating the firing temperature characteristics, and the Y 2 O 3 composition is 2.5 mol%. The present invention has found a range of the monoclinic phase ratio in which cracks and the like do not occur in the following cases.
In the method of manufacturing an electrostrictive element, a lower electrode film, a piezoelectric / electrostrictive film, and an upper electrode film are sequentially formed on a substrate containing zirconia as a main component, and the piezoelectric / electrostrictive film is formed wider than the lower electrode film. Then, in the firing step of the piezoelectric / electrostrictive element in contact with the substrate, when the temperature is lowered, forced cooling is performed so that at least 3
The cooling rate from 00 ° C to 150 ° C is 0.5 ° C / min or more. This control of the temperature decreasing rate is similarly effective even when the additive material is calcium oxide, magnesium oxide, cerium oxide or the like. By making the temperature drop rate steep in this way, even if firing is performed in a state where the substrate and the piezoelectric / electrostrictive film are in contact with each other, no T / M transformation occurs in the substrate, and a reduction in the strength of the substrate is prevented. Can be.
【0007】また、請求項2の発明は、請求項1の発明
において、基板の組成を2.5〜3.5mol%Y2O
3−ZrO2として構成される。ここで、基板の組成は
焼成前の当初の組成を意味するが、Y2O3添加量が
2.5mol%を下回る場合にはY203の減少量を考
慮すると添加量が少ないために降温速度を急峻にしても
基板の強度低下を防ぐことはできず、また、3.5mo
l%を上回る場合には、Y2O3減少量を考慮しても添
加量が多すぎるため所望の基板特性を得ることができな
い。According to a second aspect of the present invention, in the first aspect, the composition of the substrate is 2.5 to 3.5 mol% Y2O.
It is configured as 3-ZrO2. Here, the composition of the substrate means the initial composition before firing, but when the added amount of Y2O3 is less than 2.5 mol%, the temperature drop rate is made steep because the added amount is small in consideration of the reduced amount of Y203. Can not prevent the strength of the substrate from decreasing,
If it exceeds 1%, the desired amount of substrate cannot be obtained because the amount of addition is too large even when the amount of Y2O3 reduction is considered.
【0008】更に、請求項3の発明は、請求項1又は2
の発明において、300℃〜150℃までの平均降温速
度が0.7℃/分以上であることを特徴とする。なお好
ましくは275℃から175℃で効果が顕著である。[0008] Further, the invention of claim 3 is based on claim 1 or 2
In the invention, the average cooling rate from 300 ° C. to 150 ° C. is 0.7 ° C./min or more. The effect is more preferably at 275 ° C. to 175 ° C.
【0009】また、請求項4の発明に係る圧電/電歪素
子は、下部電極膜,圧電/電歪膜及び上部電極膜をジル
コニアを主成分とする基板上に順に形成してなり、該基
板がY2O3を含有し、該基板の下部電極膜に覆われて
いない部位のY2O3組成比が1.5〜2.5mol%
であり、且つ該基板の当該部位の単斜晶相率が2.0%
以下であることを特徴とするもので、当該組成範囲にお
いて、単斜相率が2.0%以下であるので、振動板とし
て働く基板の中で最も応力が掛かりやすい下部電極膜に
覆われていない当該部位の特性を硬度等の優れたものと
することができ、基板を強度低下することなく用いた圧
電/電歪素子を得ることができる。尚、好ましくは単斜
相率1.5%以下が効果が顕著である。According to a fourth aspect of the present invention, there is provided a piezoelectric / electrostrictive element in which a lower electrode film, a piezoelectric / electrostrictive film, and an upper electrode film are sequentially formed on a substrate mainly composed of zirconia. Contains Y2O3, and the portion of the substrate not covered by the lower electrode film has a Y2O3 composition ratio of 1.5 to 2.5 mol%.
And the monoclinic phase ratio of the site on the substrate is 2.0%.
In the composition range, the monoclinic phase ratio is 2.0% or less, so that the substrate is covered with the lower electrode film that is most likely to be stressed among the substrates that function as a diaphragm. The characteristics of such a portion can be made excellent in hardness and the like, and a piezoelectric / electrostrictive element used without reducing the strength of the substrate can be obtained. Preferably, the effect is remarkable at a monoclinic phase ratio of 1.5% or less.
【0010】[0010]
【発明の実施の形態】以下、本発明を具体化した実施の
形態を説明する。本発明に係る圧電/電歪素子の構成の
概略を図2(a)に示す。これは、従来の圧電/電歪素
子の構造と同様である。Embodiments of the present invention will be described below. FIG. 2A schematically shows the configuration of the piezoelectric / electrostrictive element according to the present invention. This is the same as the structure of the conventional piezoelectric / electrostrictive element.
【0011】基板1は3mol%Y2O3ーZrO2か
ら成るグリーンシートを複数枚重ね合わせ焼成して形成
される。圧電/電歪膜5はPbO、ZrO2、TiO2
を主成分とするジルコン酸チタン酸鉛で形成し、図2に
示すように基板1に面する下部及びその対向面である上
部にそれぞれ下部電極膜6a,上部電極膜6bが設けら
れ、圧電/電歪膜5は基板上に形成した下部電極膜6a
上に印刷形成され、1200℃〜1300℃で焼成して
形成される。The substrate 1 is formed by stacking and firing a plurality of green sheets composed of 3 mol% Y2O3-ZrO2. The piezoelectric / electrostrictive film 5 is made of PbO, ZrO2, TiO2
As shown in FIG. 2, a lower electrode film 6a and an upper electrode film 6b are respectively provided on a lower portion facing the substrate 1 and an upper portion facing the substrate 1 as shown in FIG. The electrostrictive film 5 has a lower electrode film 6a formed on the substrate.
It is formed by printing and firing at 1200 ° C. to 1300 ° C.
【0012】焼成工程を図1の焼成温度プロファイルを
基に説明すると、図1に示すように最高温度に達するま
でのプロファイルは従来の設定と変わらないが、最高温
度で所定時間焼成後、降温プロファイルを大きく変更
し、強制冷却により温度を下降させている。この強制冷
却は特に300℃から150℃までの平均降温時間を
0.5℃/分以上とすると良く、更に、300℃〜15
0℃までの平均降温速度を0.7℃/分以上とすると後
述する図3に示すように単斜相率を小さくでき効果的で
ある。尚、強制冷却を行う温度領域を特に275℃〜1
75℃にするとより顕著な効果がある。The firing process will be described with reference to the firing temperature profile shown in FIG. 1. As shown in FIG. 1, the profile until the maximum temperature is reached is not different from the conventional setting. Is greatly changed, and the temperature is lowered by forced cooling. In this forced cooling, it is particularly preferable that the average temperature drop time from 300 ° C. to 150 ° C. is 0.5 ° C./min or more.
When the average temperature drop rate to 0 ° C. is 0.7 ° C./min or more, the monoclinic phase ratio can be reduced as shown in FIG. The temperature range in which the forced cooling is performed is particularly 275 ° C to 1 ° C.
A temperature of 75 ° C. has a more remarkable effect.
【0013】次に圧電/電歪素子の具体的製造過程と特
性を示す。まず、基板1をZrO2−3mol%Y2O
3から成るグリーンシートを複数重ね合わせ、1400
〜1500℃で焼成してジルコニア基板を得る。次に圧
電/電歪素子を形成する。下部電極膜6aとして、Pt
ペーストをジルコニア基板上にスクリーン印刷で形成
し、焼成する。そして、PbO、ZrO2、TiO2、
Nb205を主成分とする圧電粉末を含むペーストを下
部電極膜6a上にスクリーン印刷し、1200〜130
0℃で焼成することで圧電/電歪素子5の下部電極膜6
aと圧電/電歪膜5を形成する。そして、この焼成工程
の冷却過程でエアーを炉内温度500℃付近から炉内へ
送り込むことで、300℃から150℃までの通過時間
を192分(0.78℃/分)とした。Next, specific manufacturing processes and characteristics of the piezoelectric / electrostrictive element will be described. First, the substrate 1 is made of ZrO2-3 mol% Y2O.
3 green sheets 1400
Firing at ~ 1500C to obtain a zirconia substrate. Next, a piezoelectric / electrostrictive element is formed. Pt is used as the lower electrode film 6a.
The paste is formed on a zirconia substrate by screen printing and fired. And PbO, ZrO2, TiO2,
A paste containing a piezoelectric powder containing Nb205 as a main component is screen-printed on the lower electrode film 6a,
By firing at 0 ° C., the lower electrode film 6 of the piezoelectric / electrostrictive element 5 is formed.
a and the piezoelectric / electrostrictive film 5 are formed. Then, in the cooling process of the firing step, air was sent into the furnace from a temperature around 500 ° C. in the furnace, so that the passage time from 300 ° C. to 150 ° C. was 192 minutes (0.78 ° C./min).
【0014】冷却工程をこのように強制冷却すること
で、接触部7のジルコニア基板1のY2O3は3mol
から2.0mol%となっていたが、単斜相率(正方晶
に対する比率)は1.3%であり、クラックの発生はな
かった。因みに、実施例1の製造工程において、強制冷
却を実施しなかった場合、300℃から150℃までの
通過時間が556分(0.27℃/分)であり、単斜相
率が3.4%となり、クラックの発生が認められた。By forcibly cooling the cooling step in this manner, 3 mol of Y 2 O 3 of the zirconia
However, the monoclinic phase ratio (ratio to the tetragonal system) was 1.3%, and no crack was generated. Incidentally, when the forced cooling was not performed in the production process of Example 1, the passage time from 300 ° C. to 150 ° C. was 556 minutes (0.27 ° C./min), and the monoclinic phase ratio was 3.4. %, And cracks were observed.
【0015】図3は、このように降温速度を変えた場合
の単斜相率変化結果を示し、300℃から150℃の通
過時間が短いほど単斜相率が小さいこと、及び単斜相率
が2.0%以下、より好ましくは1.5%以下において
クラックが発生しないことがわかる。尚、単斜相率の測
定は、ジルコニア基板1の接触部7の反応部分を含む基
板をX線回折により、単斜晶(111)面ピーク高さ/
正方晶(101)面ピーク高さ(%)で求めた。上記の
様に、接触部7のジルコニア基板1のY2O3は当初の
組成から略1.0mol%減少するが、減少後の組成に
おいて、単斜相率が2.0%以下、より好ましくは1.
5%以下にするとクラック等の基板への影響は発生しな
い。FIG. 3 shows the results of the change in the monoclinic phase ratio when the cooling rate is changed as described above. The shorter the passage time from 300 ° C. to 150 ° C., the smaller the monoclinic phase ratio. It can be seen that cracks do not occur at 2.0% or less, more preferably at 1.5% or less. Incidentally, the monoclinic phase ratio was measured by X-ray diffraction of the substrate including the reaction part of the contact portion 7 of the zirconia substrate 1 by the monoclinic (111) plane peak height /
It was determined from the tetragonal (101) plane peak height (%). As described above, the Y2O3 of the zirconia substrate 1 at the contact portion 7 is reduced by about 1.0 mol% from the initial composition, but the monoclinic phase ratio is 2.0% or less, more preferably 1.
When the content is set to 5% or less, no influence on the substrate such as a crack occurs.
【0016】このように強制冷却することで、印刷した
圧電/電歪膜の縁部が基板に接触した状態で焼成して
も、基板当接部がT/M変態を起こしてクラック等が発
生するようなことが無く、良好な特性を維持することが
できる。尚、強制冷却の方法としては炉内に直接空気を
送り込む空冷としても良いが、炉体の断熱体内部に水の
配管を施して水冷とすると温度制御を容易に行うことが
できる。また、焼成炉の大きさや構造により自然冷却さ
せた場合の降温特性が異なるが、何れの炉であっても強
制冷却する事で基板特性を改善させることができる。By forced cooling as described above, even if the printed piezoelectric / electrostrictive film is baked in a state in which the edge is in contact with the substrate, the substrate contact portion undergoes T / M transformation to cause cracks and the like. And good characteristics can be maintained. The forced cooling may be performed by air cooling in which air is directly fed into the furnace. However, if water cooling is performed by providing a water pipe inside the heat insulator of the furnace, temperature control can be easily performed. In addition, although the temperature drop characteristics in the case of natural cooling differ depending on the size and structure of the firing furnace, the substrate characteristics can be improved by forced cooling in any furnace.
【0017】[0017]
【発明の効果】以上詳述したように、請求項1乃至3に
よれば、焼成前に圧電/電歪膜縁部が基板に接触してい
ても、圧電素子が基板に悪影響を及ぼすこと無く、双方
を良好に焼成することができる。また、請求項4によれ
ば、基板中で最も応力の掛かりやすい部位に、1.5〜
2.5mol%Y2O3で単斜相率を2.0%以下とす
ることで、より信頼性を向上した圧電/電歪素子を得る
ことができる。As described in detail above, according to the first to third aspects, even if the edge of the piezoelectric / electrostrictive film is in contact with the substrate before firing, the piezoelectric element does not adversely affect the substrate. And both can be sintered favorably. According to the fourth aspect, 1.5 to 1.5 are applied to the portion of the substrate where stress is most likely to be applied.
By setting the monoclinic phase ratio to 2.0% or less with 2.5 mol% Y 2 O 3, a more reliable piezoelectric / electrostrictive element can be obtained.
【図1】本発明の実施の形態の1例を示す圧電/電歪素
子の製造方法の要部である焼成工程の温度プロファイル
である。FIG. 1 is a temperature profile of a firing step, which is a main part of a method for manufacturing a piezoelectric / electrostrictive element, showing an example of an embodiment of the present invention.
【図2】本発明に係る圧電/電歪素子部の横断面説明図
を示し、(a)は焼成後の状態、(b)は圧電/電歪膜
の印刷後の状態である。FIGS. 2A and 2B are explanatory cross-sectional views of a piezoelectric / electrostrictive element according to the present invention, wherein FIG. 2A shows a state after firing and FIG. 2B shows a state after printing of a piezoelectric / electrostrictive film.
【図3】焼成工程における降温速度を変えた場合の単斜
相率とクラックの発生状況を示し、(a)は測定結果デ
ータ表、(b)はそのグラフ化したデータである。FIGS. 3A and 3B show a monoclinic phase ratio and a state of occurrence of cracks when a cooling rate is changed in a firing step. FIG. 3A is a measurement result data table, and FIG. 3B is a graphed data thereof.
1・・基板、2・・流路、5・・圧電/電歪膜、6a・
・下部電極膜,6b・・上部電極膜。1. substrate, 2. flow path, 5. piezoelectric / electrostrictive film, 6a
· Lower electrode film, 6b · · · Upper electrode film.
Claims (4)
膜をジルコニアを主成分とする基板上に順に形成してな
り、該圧電/電歪膜が下部電極膜より広く形成され、基
板に接触している圧電/電歪素子の焼成工程において、
温度を下降する際に強制冷却し、少なくとも300℃か
ら150℃までの降温速度を0.5℃/分以上とするこ
とを特徴とする圧電/電歪素子の製造方法。A lower electrode film, a piezoelectric / electrostrictive film, and an upper electrode film are sequentially formed on a substrate containing zirconia as a main component, wherein the piezoelectric / electrostrictive film is formed wider than the lower electrode film; In the firing step of the piezoelectric / electrostrictive element in contact with
A method for manufacturing a piezoelectric / electrostrictive element, wherein forced cooling is performed when a temperature is lowered, and a rate of temperature decrease from at least 300 ° C. to 150 ° C. is 0.5 ° C./min or more.
%Y2O3−ZrO2とした請求項1記載の圧電/電歪
素子の製造方法。2. The composition of the substrate is 2.5-3.5 mol.
2. The method for producing a piezoelectric / electrostrictive element according to claim 1, wherein the composition is% Y2O3-ZrO2.
が0.7℃/分以上である請求項1又は2記載の圧電/
電歪素子の製造方法。3. The piezoelectric / cylinder according to claim 1, wherein an average temperature drop rate from 300 ° C. to 150 ° C. is 0.7 ° C./min or more.
A method for manufacturing an electrostrictive element.
膜をジルコニアを主成分とする基板上に順に形成してな
り、該基板がY2O3を含有し、該基板の下部電極膜に
覆われていない部位のY2O3組成比が1.5〜2.5
mol%であり、且つ該基板の当該部位の単斜晶相率が
2.0%以下であることを特徴とする圧電/電歪素子。4. A lower electrode film, a piezoelectric / electrostrictive film, and an upper electrode film are sequentially formed on a substrate containing zirconia as a main component, the substrate containing Y2O3, and covering the lower electrode film of the substrate. The Y2O3 composition ratio of the uncoated part is 1.5 to 2.5.
mol%, and the monoclinic phase ratio of the portion of the substrate is 2.0% or less.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7441317B2 (en) | 2004-12-02 | 2008-10-28 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive device and method for manufacturing the same |
EP2214221A2 (en) | 2009-01-29 | 2010-08-04 | NGK Insulators, Ltd. | Piezoelectric or electrostrictive element and manufacturing method of the same |
WO2018131600A1 (en) * | 2017-01-10 | 2018-07-19 | 京セラ株式会社 | Mounting member for heat treatment |
-
2000
- 2000-03-31 JP JP2000098728A patent/JP3921918B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7441317B2 (en) | 2004-12-02 | 2008-10-28 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive device and method for manufacturing the same |
EP2214221A2 (en) | 2009-01-29 | 2010-08-04 | NGK Insulators, Ltd. | Piezoelectric or electrostrictive element and manufacturing method of the same |
US8476805B2 (en) | 2009-01-29 | 2013-07-02 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive element having a specific coverage area of electrode on substrate, and manufacturing method of the same |
WO2018131600A1 (en) * | 2017-01-10 | 2018-07-19 | 京セラ株式会社 | Mounting member for heat treatment |
JPWO2018131600A1 (en) * | 2017-01-10 | 2019-11-07 | 京セラ株式会社 | Mounting member for heat treatment |
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