JP2001278612A - Method of recovering silicon - Google Patents
Method of recovering siliconInfo
- Publication number
- JP2001278612A JP2001278612A JP2000096957A JP2000096957A JP2001278612A JP 2001278612 A JP2001278612 A JP 2001278612A JP 2000096957 A JP2000096957 A JP 2000096957A JP 2000096957 A JP2000096957 A JP 2000096957A JP 2001278612 A JP2001278612 A JP 2001278612A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- dispersant
- powder
- abrasive grains
- solid content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 57
- 239000010703 silicon Substances 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 76
- 239000002002 slurry Substances 0.000 claims abstract description 55
- 239000007787 solid Substances 0.000 claims abstract description 49
- 239000002270 dispersing agent Substances 0.000 claims abstract description 35
- 239000006061 abrasive grain Substances 0.000 claims abstract description 33
- 238000005406 washing Methods 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 239000000843 powder Substances 0.000 claims abstract description 26
- 239000010802 sludge Substances 0.000 claims abstract description 25
- 238000005520 cutting process Methods 0.000 claims abstract description 22
- 239000002253 acid Substances 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 19
- 239000003960 organic solvent Substances 0.000 claims abstract description 17
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002699 waste material Substances 0.000 claims description 34
- 238000000926 separation method Methods 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 6
- 238000004804 winding Methods 0.000 claims description 3
- 238000001914 filtration Methods 0.000 abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- 238000001035 drying Methods 0.000 abstract description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 4
- 150000007522 mineralic acids Chemical class 0.000 abstract description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052580 B4C Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000011149 sulphuric acid Nutrition 0.000 description 2
- 229910003556 H2 SO4 Inorganic materials 0.000 description 1
- 229910003638 H2SiF6 Inorganic materials 0.000 description 1
- 101000627861 Homo sapiens Matrix metalloproteinase-28 Proteins 0.000 description 1
- 102100026799 Matrix metalloproteinase-28 Human genes 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- -1 for example Substances 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 1
- 229910000359 iron(II) sulfate Inorganic materials 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002480 mineral oil Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 238000003828 vacuum filtration Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Separating Particles In Gases By Inertia (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、例えばワイヤソー
にてシリコンを切断する際に生じる廃スラリからシリコ
ンの含有率の高い粉体を回収する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for recovering a powder having a high silicon content from waste slurry generated when cutting silicon with a wire saw, for example.
【0002】[0002]
【従来の技術】シリコン単結晶やシリコン多結晶のイン
ゴットからIC用ウエーハ、太陽電池用ウエーハ等の薄
状板を得る手法の一つとして、ワイヤソーと呼ばれる装
置が用いられている。この装置は、例えば1本のワイヤ
を複数のローラ間に所定ピッチで巻き付けてなるワイヤ
群を構成し、ローラの回転によりワイヤを高速走行させ
ながらインゴットをワイヤに押し付けると共に砥粒を含
むスラリをインゴットとワイヤとの接触部に供給して、
シリコン結晶をスライスしウエーハを得るものである。2. Description of the Related Art An apparatus called a wire saw is used as one of the techniques for obtaining thin plates such as wafers for ICs and wafers for solar cells from ingots of silicon single crystal or silicon polycrystal. This device constitutes a wire group formed by winding a single wire between a plurality of rollers at a predetermined pitch, for example, and presses the ingot against the wire while rotating the wire at a high speed by rotating the rollers, and also forms a slurry containing abrasive grains on the ingot. To the contact part with the wire
A wafer is obtained by slicing a silicon crystal.
【0003】前記スラリは循環して用いられるが、プロ
セスを繰り返し行うと、シリコンの切り粉や破砕砥粒の
混入量が多くなって(ワイヤーの磨耗片である金属粉も
微量に含まれる)切削性能が低下し、スライス精度が悪
くなるため、適宜スラリの一部を排出すると共に新しい
スラリを補給して、スラリ中の切り粉などの固形分濃度
を下げることによりスライス精度を保持している。また
ワイヤソーから排出される廃スラリは分散剤の分解処理
をして廃棄されるかあるいは自燃処理されるが、回収装
置において砥粒を回収し更に残りの固形分をスラッジと
して取り出して廃棄されることもある。[0003] The above-mentioned slurry is used in a circulating manner. However, if the process is repeated, the amount of silicon chips and crushed abrasive particles increases, and cutting (including a small amount of metal powder which is a worn piece of wire) is performed. Since the performance is reduced and the slicing accuracy is degraded, the slicing accuracy is maintained by discharging a part of the slurry as needed and replenishing a new slurry to reduce the solid content concentration of chips and the like in the slurry. The waste slurry discharged from the wire saw is either disposed of by dissolving the dispersant or discarded, or is treated by self-combustion.However, the abrasives must be collected in a collection device, and the remaining solids must be removed as sludge and discarded. There is also.
【0004】[0004]
【発明が解決しようとする課題】ところで、上述の廃ス
ラリやスラッジ中には、不足しつつある貴重なシリコン
が含まれているにもかかわらず無駄に捨てられているの
が現状である。The waste slurry and sludge described above contain wasteful silicon, which is becoming scarce, but is wastefully discarded.
【0005】本発明はこのような事情に基づいてなされ
たものであり、その目的は、切削、研磨といったシリコ
ン結晶の加工にて発生する廃棄物からシリコンを回収す
る方法を提供することにある。The present invention has been made in view of such circumstances, and an object of the present invention is to provide a method for recovering silicon from waste generated by processing silicon crystals such as cutting and polishing.
【0006】[0006]
【課題を解決するための手段】本発明に係るシリコンの
回収方法は、砥粒を分散剤に分散させてなるスラリを供
給しながらシリコンの単結晶または多結晶を切断または
研磨する処理にて排出される廃スラリに対して固液分離
した後の固形分を用い、この固形分を有機溶剤により洗
浄し、固形分に含まれる分散剤を除去する有機溶剤洗浄
工程と、分散剤の除去が行われた後の固形分から酸化シ
リコン及び砥粒を除去して、シリコンを主成分とする粉
体を得る分離工程と、を含むことを特徴とする。According to a method of recovering silicon according to the present invention, a slurry formed by dispersing abrasive grains in a dispersing agent is supplied while discharging a single crystal or polycrystal of silicon by cutting or polishing. The solid content after solid-liquid separation of the waste slurry to be used is used, the solid content is washed with an organic solvent, and an organic solvent washing step of removing a dispersant contained in the solid content and a dispersant removal are performed. And removing a silicon oxide and abrasive grains from the solid content after the separation to obtain a powder containing silicon as a main component.
【0007】このような方法によれば、シリコンの単結
晶または多結晶を切断(スライス)する際、または前記
スライス後のウエーハに対して研磨を行う際に生じる廃
スラリから高純度のシリコン粉体を回収することができ
る。According to such a method, high-purity silicon powder is obtained from waste slurry generated when cutting (slicing) a single crystal or polycrystal of silicon or polishing a wafer after slicing. Can be recovered.
【0008】具体的には、シリコンの単結晶または多結
晶からなるインゴットを金属製の切断手段例えば多数の
ワイヤを平行に張設したワイヤ群で切断して多数のウエ
ーハを得る際に生じる廃スラリ、またはこの廃スラリか
ら砥粒を回収しかつ分散剤を除去した後のスラッジを対
象として高純度のシリコン粉体が回収できる。Specifically, waste slurry generated when a large number of wafers are obtained by cutting an ingot made of single crystal or polycrystal of silicon with a metal cutting means, for example, a group of wires in which a number of wires are stretched in parallel. Alternatively, high-purity silicon powder can be collected from the sludge after the abrasive grains have been collected from the waste slurry and the dispersant has been removed.
【0009】前記分離工程は、前記固形分に酸溶液を供
給して少なくとも酸化シリコンを除去するための酸洗浄
工程と、前記固形分に対し分級処理を行ってシリコン粉
と砥粒とを分離するための分級工程とを含めることがで
きる。酸洗浄工程では酸溶液として弗化水素を用いるこ
とが好ましく、このようにすることで廃スラリから分離
される固形分またはスラッジ中に含まれる酸化シリコン
を溶解、除去することができる。また分級工程では例え
ば気流分級装置を用いることができる。The separating step includes an acid washing step for supplying an acid solution to the solid content to remove at least silicon oxide, and a classification process for the solid content to separate silicon powder and abrasive grains. And a classifying step. In the acid washing step, it is preferable to use hydrogen fluoride as the acid solution, and by doing so, it is possible to dissolve and remove the solid oxide separated from the waste slurry or the silicon oxide contained in the sludge. In the classification step, for example, an airflow classification device can be used.
【0010】[0010]
【発明の実施の形態】以下に述べる本発明の実施の形態
は、シリコンの単結晶または多結晶をワイヤソーにより
スライスする際に生じる廃スラリやスラッジからシリコ
ンを粉体として回収する方法である。先ず回収方法につ
いて述べる前に、ワイヤソーを用いて処理対象である廃
スラリを得るまでの工程について図1を参照しながら簡
単に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention described below is a method for recovering silicon as a powder from waste slurry or sludge generated when a single crystal or polycrystal of silicon is sliced by a wire saw. First, before describing a recovery method, a process of obtaining a waste slurry to be treated using a wire saw will be briefly described with reference to FIG.
【0011】ワイヤソーは、切断手段である1本のワイ
ヤを複数本例えば3本のローラ12間に所定ピッチで巻
回し張設してなり、ローラ12の回転により走行するワ
イヤ群11に、例えば炭化珪素(SiC)からなる砥粒
を水溶性あるいは油性の分散剤に分散させてスラリ化し
たものを、スラリ槽13からポンプP及びバルブVが介
設された供給管14とスラリ供給手段15とを介して循
環供給し、ワイヤ群11の上方側から被切削体である単
結晶シリコンや多結晶シリコンのインゴット16をワイ
ヤ群11を通過するように下降させることにより、該イ
ンゴット16を切削(スライス)し、多数のウエーハを
同時に得るように構成されている。ここで水溶性の分散
剤とは例えば水をベースとしてグリコール、界面活性
剤、高級脂肪酸等が添加されたものを挙げることがで
き、また油性の分散剤とは例えば鉱物油などのオイルに
潤滑剤等が添加されたものを挙げることができる。The wire saw is formed by winding and stretching a single wire as a cutting means at a predetermined pitch between a plurality of, for example, three rollers 12. A slurry obtained by dispersing abrasive grains made of silicon (SiC) in a water-soluble or oil-based dispersant is supplied from a slurry tank 13 to a supply pipe 14 provided with a pump P and a valve V, and a slurry supply means 15. The ingot 16 is circulated and supplied from the upper side of the wire group 11, and the ingot 16 of the single crystal silicon or the polycrystalline silicon, which is the object to be cut, is lowered so as to pass through the wire group 11 to cut (slice) the ingot 16 In addition, it is configured to simultaneously obtain a large number of wafers. Here, the water-soluble dispersant includes, for example, those based on water to which glycols, surfactants, higher fatty acids and the like are added, and the oil-based dispersants include, for example, lubricants for oils such as mineral oils. And the like can be mentioned.
【0012】この切削処理の際には、スラリ供給管15
からワイヤ群11に供給されたスラリは、受槽17を介
してスラリ槽13に貯溜されるが、インゴット16をス
ライスすると既述のようにスラリ中にインゴット16の
切り粉、破砕砥粒及びワイヤの摩耗片である金属粉が混
入し、これらの固形分量が多くなるとスライス精度が悪
くなる。このため、適宜スラリの一部を廃スラリとして
排出管18を介して廃スラリ槽19に排出している。こ
こで生じる廃スラリは、主成分として50重量%前後の
分散剤を含むほか、例えば10〜30μmの大きさの砥
粒、切削処理により破砕された5〜15μmの大きさの
破砕砥粒、数μmの大きさのインゴットの切り粉、ワイ
ヤから出る金属粉等を含んでいる。なおこの廃スラリ
は、例えばデカンタ等により砥粒を回収し、その残渣分
に対して例えば不織布等のフィルタ等により切り粉、破
砕砥粒及び金属粉をスラッジと、分散剤とに分離するよ
うにしても良い。During the cutting process, the slurry supply pipe 15
The slurry supplied to the wire group 11 is stored in the slurry tank 13 via the receiving tank 17, but when the ingot 16 is sliced, the chips of the ingot 16, the crushed abrasive particles and the Slicing accuracy deteriorates when metal powders, which are wear pieces, are mixed in and the amount of these solids increases. For this reason, a part of the slurry is appropriately discharged as waste slurry to a waste slurry tank 19 via a discharge pipe 18. The waste slurry generated here contains, as a main component, about 50% by weight of a dispersing agent, for example, abrasive grains having a size of 10 to 30 μm, crushed abrasive grains having a size of 5 to 15 μm crushed by cutting, Includes cutting powder of ingot having a size of μm, metal powder coming out of a wire, and the like. In addition, this waste slurry, for example, to collect the abrasive grains by a decanter or the like, and to separate the cuttings, crushed abrasive grains and metal powder into a sludge and a dispersant by a filter such as a nonwoven fabric for the residue. May be.
【0013】次に上述のようにして得られた廃スラリ及
びスラッジからシリコンを回収する工程について、図2
及び図3を参照しながら説明する。先ず、廃スラリは前
述のように分散剤を多量に含み量が多いため、固液分離
工程例えば遠心分離機からなる第1の濾過装置2にて濾
過を行って粘土状の固形分(ケーキ)を分離する。ここ
で本実施の形態で用いられる濾過装置について述べてお
くと、第1の濾過装置及び後工程で用いられる濾過装置
では同様のものが用いられるものとし、前記遠心分離機
以外にも例えばプレスフィルター、真空濾過装置及びデ
カンタ等が利用できる。Next, a process of recovering silicon from waste slurry and sludge obtained as described above will be described with reference to FIG.
This will be described with reference to FIG. First, since the waste slurry contains a large amount of the dispersant as described above, it is filtered in the solid-liquid separation step, for example, the first filtration device 2 composed of a centrifugal separator to obtain a clay-like solid content (cake). Is separated. Here, the filtering device used in the present embodiment will be described. The same filtering device is used as the first filtering device and the filtering device used in the subsequent process. , A vacuum filtration device and a decanter can be used.
【0014】このようにして得られる固形分の組成につ
いて説明をしておくと、例えば70〜50重量%の固形
分に対して分散剤が30〜50重量%含まれており、こ
の固形分中における主な物質の組成はシリコンの切り粉
であるシリコン(Si)及び酸化シリコン(SiO2)
が10〜30重量%、金属分が5〜10%、砥粒である
炭化シリコン(SiC)が85〜60重量%となってい
る。シリコンの切り粉に含まれるSiO2はシリコン粉
の表面を覆っている物質であり、これはシリコンが切削
処理時、高温に晒されるために生じるものである。また
金属粉は例えばワイヤ群31に用いられる金属であり、
鉄(Fe)、銅(Cu)、アルミニウム(Al)等が含
まれることが考えられるが、便宜上、本実施の形態では
鉄粉及び銅粉により構成されているものとして説明を行
う。The composition of the solid obtained in this way will be described. For example, a solid content of 70 to 50% by weight contains a dispersant in an amount of 30 to 50% by weight. The composition of the main substances in silicon is silicon (Si) and silicon oxide (SiO2)
Is 10 to 30% by weight, a metal content is 5 to 10%, and silicon carbide (SiC) as abrasive grains is 85 to 60% by weight. SiO2 contained in the silicon powder is a substance covering the surface of the silicon powder, which is generated because silicon is exposed to a high temperature during the cutting process. The metal powder is a metal used for the wire group 31, for example.
Although iron (Fe), copper (Cu), aluminum (Al), and the like are considered to be included, for the sake of convenience, the present embodiment will be described as being formed of iron powder and copper powder.
【0015】そして、この固形分を攪拌機31の設けら
れた洗浄槽32に投入し、ここに固形分と等量以上の有
機溶剤例えばアセトンを供給する。そして洗浄槽32内
で攪拌を行うことで有機溶剤洗浄工程である固形分の洗
浄が行われ、該固形分に含まれる分散剤及び増粘剤がア
セトンに溶解して固形分は砂状となる。なお有機溶剤は
アセトンに限られず、灯油、エーテルまたはトルエン等
であってもよい。Then, the solid content is put into a washing tank 32 provided with a stirrer 31, and an organic solvent such as acetone, which is equal to or more than the solid content, is supplied thereto. The solid content is washed in the organic solvent washing step by stirring in the washing tank 32. The dispersant and the thickener contained in the solid content are dissolved in acetone, and the solid content becomes sandy. . The organic solvent is not limited to acetone, but may be kerosene, ether, toluene, or the like.
【0016】また既述のようにワイヤソーの設備側で廃
スラリから砥粒を回収した後、分散剤を除去してスラッ
ジを得る場合もあるが、このスラッジを出発原料として
有機溶剤洗浄工程にて洗浄処理を行うようにしてもよい
し、第1の濾過装置2で分離された固形分と混合しても
よい。なお廃スラリから砥粒を回収するとはいっても破
砕されていない砥粒を回収するのであり、スラッジ中に
は、既述のように主に破砕されている砥粒が例えば40
重量%程度含まれる。As described above, after the abrasive grains are collected from the waste slurry on the wire saw equipment side, the dispersant may be removed to obtain sludge. In some cases, the sludge is used as a starting material in an organic solvent washing step. The washing treatment may be performed, or the solid matter separated by the first filtration device 2 may be mixed. Although the abrasive grains are recovered from the waste slurry, the uncrushed abrasive grains are collected. In the sludge, the abrasive grains mainly crushed as described above are, for example, 40%.
% By weight.
【0017】固形分の洗浄後、洗浄槽32内の砂状固形
分とアセトンとの混合した液を第2の濾過装置33へ送
り、固液分離が行われる(固液分離工程)。ここで固形
分中の分散剤等がアセトンと共に液分として取り出され
るため、固形分は主としてシリコンの切り粉(Si、S
iO2)、金属粉(Fe、Cu)、砥粒(SiC)によ
り構成される。この固形分は水洗槽34内にて水洗さ
れ、該固形分中に残留付着している分散剤及び有機溶剤
が洗い流される。水洗された固形分は第3の濾過装置3
5を経てケーキとして取り出され、次工程(図3の※)
へと送られる。After the solid content is washed, the mixed liquid of the sandy solid content and acetone in the washing tank 32 is sent to the second filtration device 33 to perform solid-liquid separation (solid-liquid separation step). Here, since the dispersant and the like in the solid content are taken out as a liquid component together with acetone, the solid content is mainly silicon chips (Si, S).
iO2), metal powder (Fe, Cu), and abrasive grains (SiC). This solid content is washed with water in the washing tank 34, and the dispersant and the organic solvent remaining in the solid content are washed away. The solids washed with water are supplied to a third filtration device 3
After 5 the cake is taken out and the next process (* in Fig. 3)
Sent to.
【0018】一方、前記第2の濾過装置33にて分離し
た液分は蒸留装置36に送られ、蒸留によりアセトンを
回収すると共にこのアセトンを洗浄槽32に供給して固
形分の洗浄に再利用する。この蒸留において当該液分に
溶解している分散剤は高沸点分として取り出され、廃棄
処分される。On the other hand, the liquid fraction separated by the second filtration device 33 is sent to a distillation device 36, where acetone is recovered by distillation and the acetone is supplied to a washing tank 32 to be reused for washing solids. I do. In this distillation, the dispersant dissolved in the liquid component is taken out as a component having a high boiling point and discarded.
【0019】ここで図3に移り※から後の工程の説明を
行う。先の工程で得られたケーキは攪拌機41を備える
洗浄槽42に投入され、ここに酸溶液を供給して該ケー
キの洗浄(酸洗浄工程)が行われる。この酸洗浄工程は
例えば当該ケーキ中のシリコン切り粉(SiO2)と金
属粉(Fe,Cu)とを溶解してこれらを液分として分
離することを目的として行われるものであり、前記酸溶
液にはSiO2を溶解するための例えば1〜5重量%の
弗化水素酸(フッ酸:HF)と、金属分を溶解するため
の無機酸例えば1〜5重量%の硫酸(H2SO4)との混
合溶液を使用することができる。ケーキと酸溶液との反
応は例えば以下に示す(1)〜(3)式のように進行す
る。なおここで用いる無機酸は硫酸に限られず、硝酸ま
たは塩酸等を用いることも可能である。 SiO2+6HF→H2SiF6+2H2O …(1) Fe+H2SO4→FeSO4+H2 …(2) Cu+H2SO4→CuSO4+H2 …(3) しかる後、第3の濾過装置43にて固液分離を行い、上
述のように酸溶液に溶解したSiO2、Fe及びCuが
除去される。こうして得られる残留物(固形分)は主と
してシリコンの切り粉(Si)と砥粒(SiC)であ
る。Turning now to FIG. 3, the steps after * will be described. The cake obtained in the previous step is put into a washing tank 42 provided with a stirrer 41, and an acid solution is supplied thereto to wash the cake (acid washing step). This acid washing step is performed for the purpose of, for example, dissolving the silicon powder (SiO2) and the metal powder (Fe, Cu) in the cake and separating them into liquid components. Is a mixed solution of 1 to 5% by weight of hydrofluoric acid (hydrofluoric acid: HF) for dissolving SiO2 and an inorganic acid for dissolving metal components, for example, 1 to 5% by weight of sulfuric acid (H2 SO4) Can be used. The reaction between the cake and the acid solution proceeds, for example, as shown in the following equations (1) to (3). The inorganic acid used here is not limited to sulfuric acid, and nitric acid or hydrochloric acid can also be used. SiO2 + 6HF → H2SiF6 + 2H2O (1) Fe + H2SO4 → FeSO4 + H2 (2) Cu + H2SO4 → CuSO4 + H2 (3) Thereafter, solid-liquid separation was performed in the third filtration device 43, and SiO2 and Fe dissolved in the acid solution as described above. And Cu are removed. The residue (solid content) thus obtained is mainly silicon chips (Si) and abrasive grains (SiC).
【0020】そして最後に、この固形分からシリコン
(Si)を主成分とする粉体を取り出す工程の説明を行
うと、前記固形分は水洗槽51内にて水洗された後、第
5の濾過装置52へと送られて水分が飛ばされ、その後
乾燥機53により乾燥され、固形分の各粒子が結合して
塊状となる。乾燥機53としては例えば加熱空気の気流
中に乾燥対象(固形分)を乗せ、配管中を輸送している
間に当該対象を乾燥させる気流乾燥機が用いられるが、
乾燥対象を直接加熱管や加熱壁に接触させる乾燥機を用
いてもよく、このような乾燥機としては例えば乾燥対象
を移動させる方法が異なるドラム型、スクリュー型、パ
ドル・ディスク型などがある。ドラム型乾燥機はドラム
本体を傾けて、またスクリュー型及びパドル・ディスク
型の各乾燥機はスクリューまたはパドルを回転させるこ
とで、乾燥基本体内の加熱管や加熱壁に接触する乾燥対
象を移動させるものである。Finally, the step of extracting a powder containing silicon (Si) as a main component from the solid content will be described. After the solid content is washed with water in a washing tank 51, a fifth filtration device is used. It is sent to 52 and the water is blown off, and then dried by the dryer 53, and the solid particles are combined to form a lump. As the dryer 53, for example, a flash dryer that puts an object to be dried (solid content) in a stream of heated air and dries the object while transporting the pipe is used.
A dryer may be used in which the object to be dried is brought into direct contact with a heating tube or a heating wall. Examples of such a dryer include a drum type, a screw type, and a paddle-disk type in which the method of moving the object to be dried is different. Drum type dryers tilt the drum body, and screw type and paddle / disk type dryers rotate the screw or paddle to move the drying object that comes into contact with the heating tube or heating wall in the drying basic body. Things.
【0021】こうして得た塊状固形分を粉砕機54に入
れて、解砕翼55を回転させると、塊状固形分は粉砕機
54の内壁面に衝突して粉末状となる(解砕工程)の
で、この粉状体に対して、シリコン粉と砥粒との分離を
行う。シリコン(Si)の密度は2.3、砥粒(Si
C)の密度は3.2であるので、この密度差を利用して
例えば気流分級装置56にて該粉状体の分級を行い(分
級工程)、シリコン成分と砥粒成分とに分離する。気流
分級装置とは、一定速度以上で流れる気流中に粉体を投
入すると重い粒子は速く落下し、軽い粒子ほど遠くへ飛
ぶ現象を利用して粉体の分級を行う装置である。The lump solids thus obtained are put into the pulverizer 54 and the crushing blades 55 are rotated. The lump solids collide with the inner wall surface of the pulverizer 54 and become powdery (crushing step). Separation of silicon powder and abrasive grains is performed on the powder. The density of silicon (Si) is 2.3, and the abrasive grains (Si
Since the density of C) is 3.2, the powdery material is classified by using, for example, an airflow classification device 56 using the density difference (classification step), and separated into a silicon component and an abrasive component. An airflow classification device is a device that classifies powders by using a phenomenon that, when powder is put into an airflow flowing at a certain speed or more, heavy particles fall quickly, and lighter particles fly farther.
【0022】ここで特許請求の範囲でいう「分離工程」
とは、この実施の形態では第3の濾過装置35よりも後
の各工程を表すものであり、有機溶剤洗浄工程等で分散
剤の除去された固形分(ケーキ)からシリコンの切り粉
(SiO2)、金属粉(Fe,Cu)、砥粒(SiC)
を分離する各工程がこれに相当する。Here, "separation step" referred to in the claims
In this embodiment, the term "steps" means steps after the third filtration device 35. Silicon powder (SiO2) is removed from a solid (cake) from which a dispersant has been removed in an organic solvent washing step or the like. ), Metal powder (Fe, Cu), abrasive (SiC)
Corresponds to this.
【0023】こうして廃スラリやスラッジから高純度の
シリコン粉が回収されるが、該シリコン粉は、例えばシ
リコン(Si)が95〜98重量%以上含まれており、
残部は炭化シリコン(SiC)及び不可避残留分である
例えば10ppm以下の微量な金属分である。In this way, high-purity silicon powder is recovered from waste slurry or sludge. The silicon powder contains, for example, silicon (Si) in an amount of 95 to 98% by weight or more.
The remainder is silicon carbide (SiC) and a trace amount of metal, for example, 10 ppm or less, which is an unavoidable residue.
【0024】このように本実施の形態によれば、シリコ
ンの単結晶または多結晶をワイヤソーを用いてスライス
した際に生じる廃スラリやスラッジに対して、有機溶剤
による分散剤の除去、酸による金属分及び酸化シリコン
の除去を行った後、シリコン粉と砥粒との密度差を利用
して分級処理を行っているため、スライス時のシリコン
の切り粉を回収し、高純度のシリコン粉体を得ることが
できる。この高純度のシリコン粉体は付加価値が高い原
料シリコンとなるものであり、例えば精製メーカに引き
渡して更に精製することによりシリコン結晶用あるいは
多結晶用の原料が得られる。従って、今まで廃棄されて
いた廃スラリやスラッジから、原料不足が問題になって
いるシリコンを回収できるので、資源の有効活用を図る
ことができる。As described above, according to the present embodiment, the waste slurry or sludge generated when a single crystal or polycrystal of silicon is sliced using a wire saw is used to remove a dispersant with an organic solvent and to remove a metal with an acid. After removing the silicon oxide and silicon oxide, the classification process is performed using the density difference between the silicon powder and the abrasive grains. Obtainable. This high-purity silicon powder is a raw material silicon having a high added value. For example, a raw material for silicon crystal or polycrystal can be obtained by handing over to a refiner for further purification. Accordingly, since silicon having a problem with a shortage of raw materials can be recovered from waste slurry or sludge that has been disposed up to now, resources can be effectively used.
【0025】上述実施の形態において、有機溶剤洗浄工
程などを終え、分散剤の除去されたスラッジ(ケーキ)
に対し、酸洗浄工程及び分級工程を行う順序は逆にして
もよく、即ち、例えば第3の濾過装置35で得られるケ
ーキを乾燥機53にて乾燥し、乾燥後の固形分に対して
解砕工程、分級工程を行い、こうして得られた粉体を洗
浄槽42へ送って酸洗浄工程を行うようにすることも可
能である。このようにすることで先に行う分級工程でS
iCがある程度取り除かれるため酸洗浄工程における負
荷が小さくなり、例えば供給する酸溶液の量が少なくて
済むという利点がある。In the above embodiment, sludge (cake) from which the organic solvent washing step and the like have been completed and from which the dispersant has been removed
On the other hand, the order of performing the acid washing step and the classifying step may be reversed, that is, for example, the cake obtained by the third filtration device 35 is dried by the dryer 53, and the solid content after drying is decomposed. It is also possible to perform the crushing step and the classifying step, and send the powder thus obtained to the washing tank 42 to perform the acid washing step. By doing so, S
Since iC is removed to some extent, the load in the acid washing step is reduced, and for example, there is an advantage that the amount of the supplied acid solution can be reduced.
【0026】以上において、本実施の形態はワイヤソー
に限らず、例えば金属製の切削刃を用いて単結晶あるい
は多結晶シリコンを1枚ずつスライスする際に生じる廃
スラリやスラッジを処理対象としてもよいが、ワイヤソ
ーの場合には一括して多数枚のウエーハにスライスする
ので廃スラリやスラッジの生成量が多く、特に有効であ
る。また、スライス時に用いる砥粒はSiC以外の例え
ばBC(炭化ホウ素)やダイヤモンドなどであってもよ
い。更に本実施の形態は、スライス後のウエーハに対し
て例えばSiCよりなる砥粒と水とを含むスラリを供給
して例えばSiCよりなる砥石を用いて研磨を行ういわ
ゆるラッピング工程にて発生した廃スラリやスラッジを
処理対象としてもよく、この場合も既述の実施の形態と
同様の工程が行われる。In the above, the present embodiment is not limited to a wire saw, and may be used for processing waste slurry and sludge generated when, for example, a single crystal or polycrystalline silicon is sliced one by one using a metal cutting blade. However, in the case of a wire saw, since a large number of wafers are sliced at once, a large amount of waste slurry or sludge is generated, which is particularly effective. Further, the abrasive grains used at the time of slicing may be, for example, BC (boron carbide) or diamond other than SiC. Further, in this embodiment, a waste slurry generated in a so-called lapping process in which a slurry containing, for example, abrasive grains made of SiC and water is supplied to a wafer after slicing, and polishing is performed using, for example, a grindstone made of SiC. And sludge may be treated, and in this case, the same steps as those in the above-described embodiment are performed.
【0027】ラッピング工程にて排出された廃スラリ
(あるいはスラッジ)中には金属成分は含まれていない
が、研磨削であるシリコン粉の表面はSiO2で覆われ
るので、やはり酸洗浄工程を行う必要がある。The waste slurry (or sludge) discharged in the lapping process does not contain any metal component, but the surface of the silicon powder to be polished is covered with SiO2, so that the acid cleaning process is also performed. There is a need.
【0028】[0028]
【実施例】(実施例1)ワイヤソーを用いてIC用ウエ
ーハを製造し、ここで用いるスラリに油性の分散剤を用
いたところ、廃スラリの組成は、分散剤44.0重量
%、砥粒48.7重量%、シリコン6.4重量%、金属
分0.7重量%であった。一方、本実施の形態の図1に
おけるスラリ回収装置19にて分離されるスラッジの組
成は、分散剤30重量%、砥粒40重量%、シリコン2
5重量%、金属5重量%であった。これらを処理対象と
して本発明に係るシリコンの回収方法を試みたところ、
前記廃スラリ及びスラッジのどちらを用いた場合におい
てもシリコン(Si)98重量%、炭化珪素(SiC)
2重量%の組成の粉体が得られ、不可避残留分の金属分
が100ppm以下含まれていた。EXAMPLES (Example 1) A wafer for IC was manufactured using a wire saw, and an oil-based dispersant was used for the slurry used here. The composition of the waste slurry was 44.0% by weight of the dispersant, abrasive grains 48.7% by weight, silicon 6.4% by weight, and metal content 0.7% by weight. On the other hand, the composition of the sludge separated by the slurry collecting apparatus 19 in FIG. 1 of the present embodiment is as follows: 30% by weight of a dispersant, 40% by weight of abrasive grains,
5% by weight and 5% by weight of metal. When the method for recovering silicon according to the present invention was attempted with these as processing targets,
In both cases of using the waste slurry and the sludge, silicon (Si) 98% by weight, silicon carbide (SiC)
A powder having a composition of 2% by weight was obtained, and the metal content of the unavoidable residue was contained at 100 ppm or less.
【0029】[0029]
【発明の効果】以上のように本発明によれば、切削、研
磨といったシリコン結晶の加工にて発生する廃棄物か
ら、簡易な方法で純度の高いシリコンを回収することが
できる。As described above, according to the present invention, high-purity silicon can be recovered from waste generated by processing silicon crystals such as cutting and polishing by a simple method.
【図1】本発明の実施の形態における処理対象であるワ
イヤソーの廃スラリを回収するまでの工程を説明する説
明図である。FIG. 1 is an explanatory diagram illustrating a process up to collecting waste slurry of a wire saw to be processed according to an embodiment of the present invention.
【図2】本発明方法の実施の形態を説明する説明図であ
る。FIG. 2 is an explanatory diagram illustrating an embodiment of the method of the present invention.
【図3】本発明方法の実施の形態を説明する説明図であ
る。FIG. 3 is an explanatory view illustrating an embodiment of the method of the present invention.
11 ワイヤ群 13 スラリ槽 16 インゴット 2 第1の濾過装置 32、42 洗浄槽 33 第2の濾過装置 43 第4の濾過装置 53 乾燥機 54 粉砕機 56 気流分級装置 DESCRIPTION OF SYMBOLS 11 Wire group 13 Slurry tank 16 Ingot 2 1st filtration apparatus 32, 42 Cleaning tank 33 2nd filtration apparatus 43 4th filtration apparatus 53 Dryer 54 Crusher 56 Airflow classification apparatus
───────────────────────────────────────────────────── フロントページの続き (72)発明者 宮田 健章 神奈川県横須賀市神明町1番地 株式会社 日平トヤマ技術センター内 Fターム(参考) 4D031 AC04 4D066 AA06 AB10 BA05 BB10 BB21 BB23 4G072 AA01 BB05 GG03 HH01 JJ15 JJ18 MM22 MM23 MM24 MM28 MM31 UU01 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Kensho Miyata 1 Shinmeicho, Yokosuka-shi, Kanagawa F-term in Hihei Toyama Technical Center Co., Ltd. 4D031 AC04 4D066 AA06 AB10 BA05 BB10 BB21 BB23 4G072 AA01 BB05 GG03 HH01 JJ15 JJ18 MM22 MM23 MM24 MM28 MM31 UU01
Claims (7)
供給しながらシリコンの単結晶または多結晶を切断また
は研磨する処理にて排出される廃スラリに対して固液分
離した後の固形分を用い、この固形分を有機溶剤により
洗浄し、固形分に含まれる分散剤を除去する有機溶剤洗
浄工程と、 分散剤の除去が行われた後の固形分から酸化シリコン及
び砥粒を除去して、シリコンを主成分とする粉体を得る
分離工程と、を含むことを特徴とするシリコンの回収方
法。1. A solid after solid-liquid separation of waste slurry discharged in a process of cutting or polishing a silicon single crystal or polycrystal while supplying a slurry in which abrasive grains are dispersed in a dispersant. Using an organic solvent, the solid content is washed with an organic solvent, and an organic solvent washing step of removing the dispersant contained in the solid content, and removing the silicon oxide and abrasive grains from the solid content after the dispersant is removed. And obtaining a powder containing silicon as a main component.
供給しながらシリコンの単結晶または多結晶からなるイ
ンゴットを金属製の切断手段によりスライスする処理に
て排出される廃スラリを用い、この廃スラリに対して固
液分離を行って固形分を分離する固液分離工程と、 この工程にて得られた固形分を有機溶剤により洗浄し、
固形分に含まれる分散剤を除去する有機溶剤洗浄工程
と、 分散剤の除去が行われた後の固形分から金属分、酸化シ
リコン及び砥粒を除去して、シリコンを主成分とする粉
体を得る分離工程と、を含むことを特徴とするシリコン
の回収方法。2. A waste slurry discharged by a process of slicing an ingot made of silicon single crystal or polycrystal by a metal cutting means while supplying a slurry in which abrasive grains are dispersed in a dispersant, A solid-liquid separation step of performing solid-liquid separation on the waste slurry to separate solids, washing the solids obtained in this step with an organic solvent,
An organic solvent washing step for removing the dispersant contained in the solid content, and removing the metal component, silicon oxide and abrasive grains from the solid content after the dispersant removal has been performed, and forming a powder containing silicon as a main component. And a step of obtaining silicon.
供給しながらシリコンの単結晶または多結晶からなるイ
ンゴットを金属製の切断手段により切断する処理にて排
出される廃スラリから砥粒を回収しかつ分散剤を除去し
た後のスラッジを用い、このスラッジを有機溶剤により
洗浄し、スラッジに含まれる分散剤を除去する有機溶剤
洗浄工程と、 分散剤の除去が行われた後の固形分から金属分、酸化シ
リコン及び砥粒を除去して、シリコンを主成分とする粉
体を得る分離工程と、を含むことを特徴とするシリコン
の回収方法。3. A slurry from waste slurry discharged in a process of cutting a silicon single crystal or polycrystal ingot by a metal cutting means while supplying a slurry in which the abrasive is dispersed in a dispersant. Using the sludge after collecting and removing the dispersant, washing the sludge with an organic solvent to remove the dispersant contained in the sludge, and the solid after removing the dispersant. And removing a metal component, silicon oxide and abrasive grains from the component to obtain a powder containing silicon as a main component.
数のローラ間に所定ピッチで巻き付けてなるワイヤ群で
あることを特徴とする請求項2及び3記載のシリコンの
回収方法。4. The method for recovering silicon according to claim 2, wherein the metal cutting means is a group of wires formed by winding one wire between a plurality of rollers at a predetermined pitch.
して少なくとも酸化シリコンを除去するための酸洗浄工
程と、前記固形分に対し分級処理を行ってシリコン粉と
砥粒とを分離するための分級工程とを含むことを特徴と
する請求項1乃至4のいずれかに記載のシリコンの回収
方法。5. The separation step includes: an acid washing step for supplying an acid solution to the solid content to remove at least silicon oxide; and a classification process for the solid content to separate silicon powder and abrasive grains. The method for recovering silicon according to any one of claims 1 to 4, further comprising a classification step for performing the classification.
酸を含むことを特徴とする請求項5記載のシリコンの回
収方法。6. The method for recovering silicon according to claim 5, wherein the acid solution used in the acid washing step contains hydrofluoric acid.
気流中に粉体を投入して分離する気流分級装置により行
われることを特徴とする請求項5及び6記載のシリコン
の回収方法。7. The classifying step of removing abrasive grains from the solid content comprises:
7. The method for recovering silicon according to claim 5, wherein the method is performed by an airflow classifier that separates the powder by introducing the powder into the airflow.
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