JP2001274152A - Film formation process evaluating apparatus and method, computer-readable recording medium with film formation process evaluating program stored thereon, and method of manufacturing semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film formation process evaluating apparatus which can accurately determine film formation process conditions for formation of a deposited film in a semiconductor element or the like, and also to provide an evaluation program thereof. SOLUTION: Information about surface shape and film formation process time at a given measurement time on a deposited film is input to a velocity vector extraction part 113 via an input part 121. In a surface shape extracting part 114 and a film-formation event contribution rate extracting part 115, a contribution rate of each event is calculated on the basis of a physical event model associated with the film formation at a given point and kept in a storage part 116, together with its coordinate values. The surface shape extracting part 114 creates a surface shape, based on a set of given points, and a control part 112 sets a process time and outputs information on the latest contribution rate of the storage part 116 to an output part 122. The user sets film formation process conditions in a manufacturing conditions determination part 117 by referring to the last information, and sends the determination conditions to a semiconductor element manufacturing apparatus 123 to manufacture a semiconductor element on the basis of the conditions.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming process evaluation apparatus and a film forming process evaluating method for evaluating the shape of a deposited film formed in a film forming process for a semiconductor device or a liquid crystal.
The present invention relates to a computer-readable recording medium storing a film formation process evaluation program and a semiconductor device manufacturing method for manufacturing a semiconductor device based on film formation process conditions determined by the evaluation process, and more particularly, to a plurality of physical devices related to a film formation process. By extracting the contribution rate of the phenomenon to the deposition film formation for each phenomenon, and evaluating the film quality of the deposition film based on the extracted contribution rate, the manufacturing process conditions of the semiconductor device are accurately determined, and the yield of the semiconductor device production process is improved. Related to improving technology.

[0002]

2. Description of the Related Art Generally, CVD (Chemical Vapor Depos) is used.
ition: chemical vapor deposition) In the film forming process, a plurality of film forming species such as ions and radicals (neutral active species), HDP-
It is known that a plurality of phenomena contribute to the formation of a deposited film in a film formation process, such as a sputter etching phenomenon caused by argon ions in a CVD (High Density Plasma-CVD) film formation process.

[0003] From such a background, in recent years, a film formation shape simulation (hereinafter, referred to as a model) for modeling a plurality of physical phenomena related to a film formation process and evaluating the shape of a deposited film formed by the film formation process based on the physical model. (Referred to as a film forming process evaluation apparatus) has been actively used.

[0004]

However, in conventional film forming process evaluation apparatuses, the deposited film formed by the film forming process is treated as having uniform properties regardless of the position of the substrate. Non-uniformity of film quality, etc.
The quality of the deposited film cannot be evaluated.

In general, in the film forming process, since the behavior of the film forming species in the gas phase and the reaction probability on the substrate surface are different for each phenomenon, in the case of the film forming process for a substrate having irregularities such as a trench, The ratio of each phenomenon that contributes to the formation of a deposited film (hereinafter referred to as a contribution ratio) differs depending on the location, and the film quality of the deposited film varies depending on the location. Such a change in film quality may affect the electrical characteristics of the semiconductor device, such as a change in the dielectric constant when the deposited film is an insulating film, thereby further improving the yield of the semiconductor device manufacturing process. In order to do so, evaluation of the film quality of the deposited film is indispensable.

The present invention has been made in view of the above problems, and has as its object to provide a film forming process evaluating apparatus, a film forming process evaluating method, and a film forming process evaluating method for improving the yield of a semiconductor device manufacturing process. It is an object of the present invention to provide a computer-readable recording medium storing a program and a semiconductor element manufacturing method.

[0007]

The present invention has the following features as means for solving the above technical problems.

A first feature of the present invention is a film forming process evaluation apparatus for modeling a plurality of physical phenomena related to a film forming process and evaluating the shape of a deposited film formed by the film forming process based on the physical model. Another object of the present invention is to provide a film forming process evaluation apparatus including a contribution ratio extracting unit that extracts a ratio of each physical phenomenon that contributes to the formation of a deposited film at a point on the surface of the deposited film.

As a result, information inside the deposited film is collected,
Information for evaluating the film quality of the deposited film can be obtained.

A second feature of the present invention is a film forming process evaluation method for modeling a plurality of physical phenomena related to a film forming process and evaluating the shape of a deposited film formed by the film forming process based on the physical model. Another object of the present invention is to provide a method for evaluating a film forming process including a contribution ratio extracting step of extracting a ratio of each physical phenomenon contributing to formation of a deposited film at a point on the surface of the deposited film.

Thus, information inside the deposited film is collected,
Information for evaluating the film quality of the deposited film can be obtained.

A third feature of the present invention is that a film forming process evaluation program for modeling a plurality of physical phenomena related to a film forming process and evaluating the shape of a deposited film formed by the film forming process based on the physical model is provided. In a stored computer-readable recording medium, a contribution ratio extraction process for extracting a ratio of each physical phenomenon contributing to the formation of the deposited film at a point on the surface of the deposited film is included, and the computer is caused to execute these processes. It is a computer-readable recording medium storing a film process evaluation program.

Thus, information inside the deposited film is collected,
Information for evaluating the film quality of the deposited film can be obtained.

A fourth feature of the present invention is that a plurality of physical phenomena related to the film forming process are modeled, and the shape of the deposited film formed by the film forming process is evaluated based on the physical model.
In a semiconductor device manufacturing method for manufacturing a semiconductor device under a film forming process condition determined based on an evaluation result, a contribution ratio for extracting a ratio of each physical phenomenon contributing to formation of a deposited film at a point on a surface of the deposited film Having an extraction step,
The present invention is a method for manufacturing a semiconductor device, wherein the film forming process conditions are determined with reference to the extracted ratio.

As a result, the yield of the semiconductor device manufacturing process can be improved.

Here, the recording medium is, for example, a computer-readable medium capable of recording a program, such as a semiconductor memory, a magnetic disk, an optical disk, a magneto-optical disk, a magnetic tape, a digital video disk, and communication of signals. Shall mean the medium.

It should be noted that among the plurality of physical phenomena, two different
It is desirable that a film formation phenomenon due to more than one kind of film formation, a film formation phenomenon due to one or more kinds of film formation, and at least one kind of etching phenomenon be modeled. Chemical etching, RIE, and the like can be considered.

The contribution ratio (ratio) of each physical phenomenon to the film formation may be extracted as a ratio of the rate of each physical phenomenon to the sum of the film formation rates for each phenomenon, or may be extracted from a plurality of physical phenomena. May be extracted as the ratio of the film formation rate of each physical phenomenon to the film formation rate of the phenomenon selected from. Also,
At this time, when the physical phenomenon is an etching phenomenon, it is desirable to extract the ratio assuming that the etching phenomenon contributes in the negative direction to the formation direction of the deposited film.

Thus, information on the ratio can be easily extracted.

Further, it is preferable that the coordinate value of the point and the ratio of each physical phenomenon are stored for each point on the surface of the deposited film.

Thus, the information on the ratio can be effectively used even after the evaluation is completed.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to FIGS.
The configuration and operation of a film formation process evaluation apparatus, a film formation process evaluation method, a computer-readable recording medium storing a film formation process evaluation program, and a semiconductor element manufacturing method according to an embodiment of the present invention will be described in detail.
In the following description, a velocity vector for deriving a shape change point of a deposited film is extracted based on a string model, but the technical scope of the present invention is not limited to this. Any model may be used as long as a vector can be extracted. For example, the present invention can be applied to a model using a level set method.

(Deposition Process Evaluation Apparatus) FIG. 1 is a block diagram showing a configuration of a deposition process evaluation apparatus according to an embodiment of the present invention.

As shown in FIG. 1, a film forming process evaluation apparatus 110 according to an embodiment of the present invention includes an input / output interface unit 111 for controlling the input and output of signals from the outside,
A control unit 112 for controlling various processes of the constituent elements in 0, a velocity vector extracting unit 113 for extracting a velocity vector at a point on the surface of the deposited film formed by the film forming process, a shape of the surface of the deposited film accompanying the film forming process A surface shape extraction unit 114 for extracting a change, a physical phenomenon contribution ratio extraction unit 115 for extracting a contribution ratio for each physical phenomenon relating to the film formation process at each mesh point in the deposited film, and coordinates for each mesh point in the deposited film. The storage unit 116 stores a value and a contribution ratio for each physical phenomenon, and a manufacturing condition determination unit 117 that determines a manufacturing condition of a semiconductor element with reference to the final shape after the film forming process and the contribution ratio for each physical phenomenon.

Here, the film forming process evaluation apparatus 110
Connecting to a semiconductor device manufacturing apparatus 123 for manufacturing a semiconductor device based on the determined film forming process conditions of the semiconductor device,
A semiconductor device manufacturing system, and an apparatus 1
Reference numeral 10 denotes an input unit 121 for inputting control parameters related to the film formation process evaluation apparatus 110 such as a film formation time, and an output unit 122 for outputting output information and error information from the film formation process evaluation apparatus 110 such as contribution rate information. Is connected to Note that a keyboard or a mouse pointer may be used as the input unit 121, and a display or a printer may be used as the output unit 122.

The input / output interface unit 111
It is desirable to use a graphical user interface so that a user can control components in the film forming process evaluation apparatus 110 through information displayed on the output unit 21.

(Method of Evaluating Film-Forming Process, Method of Manufacturing Semiconductor Device) FIG. 2 is a flowchart showing a method of manufacturing a semiconductor device according to an embodiment of the present invention.

When a semiconductor device manufacturing process is performed by the semiconductor device manufacturing method according to the embodiment of the present invention, the following processing steps are executed.

(1) Surface shape information Φ (t) representing the shape of the substrate surface on which a film is to be formed is input to the velocity vector extracting unit 113 via the input unit 121 (surface shape information input step, S201).

(2) Setting information such as a film forming process time T_depo and a time step Δt for film forming shape simulation is input to the speed vector extracting unit 113 via the input unit 121 (setting information input step, S202).

(3) The velocity vector extraction unit 113 sets the end point of the input surface shape information Φ (t) to the point P (setting step (I), S203).

(4) The speed vector extraction unit 113 extracts the speed vector at the point P at the time t (speed vector extraction step, S204).

Here, the velocity vector means a vector extending from the point P to the point P 'after the shape change, as shown in FIG. It is determined by calculating the film forming rate of each physical phenomenon and obtaining the sum of the film forming rates.

(5) The surface shape extraction unit 114 extracts a point P ′ on the surface of the deposited film at time t + Δt using the extracted velocity vector (shape change point extraction step, S
205).

(6) The film formation phenomenon contribution ratio extraction unit 115 extracts the contribution ratio of each phenomenon related to the film formation process at the point P, and stores the coordinate value of the point P and the contribution ratio of each phenomenon in the storage unit 116. (Contribution ratio extraction, storage step, S206). In general, in a calculation method using a string model, when the surface shape of a deposited film changes, information on the surface shape of the previous deposited film is lost. However, according to this processing, the coordinate values before the shape change and the contribution of each phenomenon are reduced. Since the ratio is stored, even after the shape change, the user can know the contribution ratio of the film formation phenomenon at each mesh point 40 in the deposited film, as shown in FIG. 4B.

In this embodiment, the contribution rate of each phenomenon is extracted using the rate for each physical phenomenon in the film forming process, as shown in FIG. That is, the ratio of the rate of each physical phenomenon to the total sum of the film forming rates is extracted, and the value is used as the contribution rate of each physical phenomenon to the film forming process. Here, the magnitude of the deposition rate calculated from the model of each phenomenon at an arbitrary point on the surface is simply expressed as the deposition rate. Even if another expression such as a film formation rate, a growth rate, a speed function, a speed vector, and a speed is used instead of the film formation rate, it means that if the contribution ratio of each phenomenon is extracted from the ratio of the magnitude. However, it is the same as the present embodiment.

Here, in the equations shown in FIGS. 5A and 5B, R (Di) and R (Ej) are rates of a film forming phenomenon Di and an etching phenomenon Ej, which are one of physical phenomena, respectively. And both are positive values. Further, the subscripts i and j indicate a film formation type and an etching type, respectively. Further, as the etching phenomenon, phenomena such as sputter etching, chemical dry etching, and RIE are considered. In the case of the etching phenomenon, the etching phenomenon contributes to the direction of decreasing the thickness of the deposited film (reverse direction). Is given as the contribution ratio.

The contribution ratio of each phenomenon may be extracted as the ratio of the film formation rate of each physical phenomenon to the film formation rate of the phenomenon selected from a plurality of physical phenomena.

(7) The controller 112 generates the surface shape information Φ
(T) It is determined whether or not the contribution rates have been extracted for all the points on (t) (determination step (I), S207).

As a result of the discrimination, when the contribution ratio has been extracted for all the points on the surface shape information Φ (t), the process proceeds to (surface shape creation step, S209). (II), the process proceeds to S208).

(8) A point adjacent to the point P from which no contribution rate has been extracted is set as the next point P (setting step (II), S
208), (speed vector extraction step, S205).

(9) The surface shape extraction unit 114 uses the set of extracted points P ′ to calculate the surface shape Φ at time t + Δt.
(T + Δt) (Surface shape creation step, S2
09).

(10) The controller 112 determines whether or not the time t + Δt is equal to or longer than the set film forming process time T_depo (determination step (II), S210).

As a result of the determination, the film forming process time T_dep
If it is greater than or equal to o (final shape, contribution information output step, S212), on the other hand, the film forming process time T_de
If it is not more than po (time increment step, S211).

(11) The control unit 112 sets the time t + Δt to t (time increment step, S21
1) Return to (setting step (I), S203) again.

(12) The control unit 112 causes the final shape Φ (T_de
po) and the contribution information are output to the output unit 122 (final shape, contribution information output step, S212).

(13) Final shape Φ output by user
With reference to (T_depo) and the contribution ratio information, the film forming process conditions of the semiconductor element are determined (manufacturing condition determining step, S213).

(14) The manufacturing condition determining unit 117 sends the determined film forming process conditions to the semiconductor device manufacturing apparatus 123, and the semiconductor element manufacturing apparatus 123 manufactures a semiconductor device based on the manufacturing process conditions (manufacturing process). Steps,
S214).

Here, it is conceivable that the output processing of the contribution rate information is performed by the processing shown in FIG. 3, for example. Hereinafter, the output processing of the contribution rate information will be described with reference to FIG.

When outputting the contribution rate information by the output processing according to the embodiment of the present invention, the following processing steps are executed.

(1) The user operates the input unit 121 to
A desired phenomenon output from the storage unit 116 to the control unit 112 is selected (phenomenon selection step, S301).

(2) The user inputs the
The step width d of the contribution ratio C of the physical phenomenon output from the storage unit 116 is input to the control unit 112 (step width setting step, S
302).

(3) The control unit 112 generates a mesh point based on the coordinate information in the storage unit 116 (mesh generation step, S303).

(4) The control unit 112 sets the counter of the contribution ratio C to 0 (counter setting step, S304).

(5) The control unit 112 extracts a coordinate point whose contribution ratio is C (coordinate extraction step, S305).

Here, the contribution ratio C to be extracted is stored in the storage unit 116.
In the case where there is a value between the values stored in, for example, as shown in FIG. 5, the coordinate value may be extracted by a linear interpolation process or the like.

(6) The control unit 112 connects the points where the extracted contribution rate is C, creates a boundary line, and outputs the boundary line to the output unit 122 as shown in FIG. Display step, S306).

(7) The controller 112 increments the value of the contribution ratio C by the step width d (increment step, S307).

(8) The control unit 112 determines that the value of the contribution ratio C is 1
It is determined whether it is not less than 00 (determination step, S30
8).

If the result of the determination is 100 or more, the contribution rate information output processing ends, while if it is less than 100 (coordinate extraction step, S305).

As described above, according to this output process, the process of obtaining the boundary line of the contribution ratio is repeated in accordance with the step width d of the contribution ratio C, whereby the distribution state of the contribution ratio (contour map, etc.)
Can be output, and the distribution state of the contribution of the film formation phenomenon by ions, which is one of the physical phenomena related to the film formation process, as shown in FIG. 7B, can be easily known. is there. In the process of forming an oxide film by plasma CVD, a region having a low film density may be formed inside the trench, and this region having a low film density is considered to have a correlation with a region having a low ion contribution rate. (B)
Can provide guidance for process improvement.

The apparatus and method for evaluating a film forming process according to the embodiment of the present invention can also be applied to a process of embedding an oxide film in a trench using HDP-CVD. That is, in the HDP-CVD process, if the ratio (E / D ratio) of the etching rate by Ar ions to the oxide film deposition rate increases,
Although there is a report that the embedding property is deteriorated, according to the film forming process evaluation apparatus and the method thereof according to the embodiment of the present invention, E / E
By calculating the distribution of D ratio, a guide to process optimization from the integration standpoint can be obtained.

Further, the film forming process evaluation apparatus according to the embodiment of the present invention has, for example, an appearance as shown in FIG. That is, the film forming process evaluation apparatus according to the embodiment of the present invention is configured by incorporating each element of the film forming process evaluation apparatus in the computer system 80. The computer system 80 includes a floppy (registered trademark) disk drive 82 and an optical disk drive 84. Then, for the floppy disk drive 82, the floppy disk 83 and the optical disk drive 8
By inserting an optical disk 86 into each of the recording media 4 and performing a predetermined read operation, the film formation process evaluation program stored in these recording media can be installed in the computer system 80. Also,
By connecting a suitable drive device to the computer system 80, for example, the RO
M85 and cartridge 8 which plays the role of a magnetic tape device
6, the installation of the film formation process evaluation program can be executed.

The film forming process evaluation method according to the embodiment of the present invention may be programmed and stored in a computer-readable recording medium. When executing the film formation process evaluation program, the recording medium is read into a computer system, the film formation process evaluation program is stored in a recording unit such as a memory in the computer system, and the processing in the film formation process evaluation program is performed. By executing the above, the film forming process evaluation method and the apparatus thereof according to the embodiment of the present invention can be realized on a computer system. Here, the recording medium means a computer-readable medium or a communication medium such as a signal capable of recording a program, such as a semiconductor memory, a magnetic disk, an optical disk, a magneto-optical disk, a magnetic tape, and a digital video disk. I do.

Thus, it should be appreciated that the present invention covers various embodiments not described herein. Therefore, the present invention must be limited only by the matters specifying the invention according to the claims that are reasonable from this disclosure.

[0066]

As described above, according to the film formation process evaluation apparatus, the film formation process evaluation method, and the computer readable recording medium storing the film formation process evaluation program of the present invention, the formation of a deposited film can be achieved. Since the ratio (contribution ratio) of each contributing physical phenomenon can be extracted, the film quality of the deposited film can be evaluated.

Further, according to the semiconductor device manufacturing method of the present invention, the ratio (contribution ratio) of each physical phenomenon that contributes to the formation of the deposited film is extracted, and the film quality of the deposited film is evaluated based on the contribution ratio. Since the film forming process conditions can be determined with high accuracy based on the result, the yield of the semiconductor device manufacturing process can be improved.

[Brief description of the drawings]

FIG. 1 is a block diagram showing a configuration of a semiconductor device manufacturing system according to an embodiment of the present invention.

FIG. 2 is a flowchart illustrating a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 3 is a flowchart illustrating a contribution rate information output process according to the embodiment of the present invention.

FIG. 4 is a diagram for explaining a film forming process evaluation method according to an embodiment of the present invention.

FIG. 5 is a diagram for explaining a film forming process evaluation method according to an embodiment of the present invention.

FIG. 6 is a diagram for explaining a film forming process evaluation method according to an embodiment of the present invention.

FIG. 7 is a diagram for explaining a film forming process evaluation method according to the embodiment of the present invention.

FIG. 8 is a view showing an overview of a film forming process evaluation apparatus according to an embodiment of the present invention.

[Explanation of symbols]

 40, 60, 70 Mesh point 80 Computer system 81 Display 82 Floppy disk drive 83 Floppy disk 84 Optical disk drive 85 Keyboard 86 Optical disk 87 ROM 88 Cartridge 100 Semiconductor device manufacturing system 110 Film formation process evaluation device 111 Input / output interface unit 112 Control unit 113 Velocity vector extraction unit 114 Surface shape extraction unit 115 Physical phenomenon extraction unit 116 Storage unit 117 Manufacturing condition determination unit 121 Input unit 122 Output unit 123 Semiconductor device manufacturing apparatus

Claims (16)

[Claims] 1. A film forming process evaluation apparatus for modeling a plurality of physical phenomena related to a film forming process and evaluating a shape of a deposited film formed by the film forming process based on the physical model. A film formation process evaluation apparatus comprising: a contribution ratio extraction unit that extracts a ratio of each physical phenomenon that contributes to the formation of the deposited film in the above point. 2. The composition according to claim 1, wherein the ratio is extracted as a ratio of a rate of each physical phenomenon to a sum of deposition rates of individual physical phenomena at a point on the surface of the deposited film. Membrane process evaluation equipment. 3. The method according to claim 1, wherein the ratio is extracted as a ratio of a film formation rate of each physical phenomenon to a film formation rate of a phenomenon selected from the plurality of physical phenomena at a point on the surface of the deposited film. The film forming process evaluation apparatus according to claim 1. 4. When the phenomenon is an etching phenomenon,
4. The film forming process evaluation apparatus according to claim 1, wherein the etching phenomenon contributes in a negative direction to the formation direction of the deposited film, and the ratio is extracted. 5. 5. The method according to claim 1, further comprising the step of storing, for each point on the surface of the deposited film, a coordinate value of the point and a ratio for each physical phenomenon. Item 5. A film forming process evaluation apparatus according to item 4. 6. A film forming process evaluation method for modeling a plurality of physical phenomena related to a film forming process, and evaluating a shape of a deposited film formed by the film forming process based on the physical model. A method for evaluating a film forming process, comprising: a contribution ratio extracting step of extracting a ratio for each physical phenomenon contributing to the formation of the deposited film in the above point. 7. The composition according to claim 6, wherein the ratio is extracted as a ratio of a rate of each physical phenomenon to a sum of film formation rates of individual physical phenomena at a point on the surface of the deposited film. Film process evaluation method. 8. The method according to claim 1, wherein the ratio is extracted as a ratio of a film formation rate of each physical phenomenon to a film formation rate of a phenomenon selected from the plurality of physical phenomena at a point on the surface of the deposited film. The method for evaluating a film forming process according to claim 6. 9. When the phenomenon is an etching phenomenon,
9. The film forming process evaluation method according to claim 6, wherein the etching phenomenon contributes in a negative direction to the formation direction of the deposited film, and the ratio is extracted. 10. The method according to claim 6, further comprising the step of storing, for each point on the surface of the deposited film, a coordinate value of the point and a ratio for each physical phenomenon.
Alternatively, the method for evaluating a film forming process according to claim 9. 11. A computer-readable recording storing a film formation process evaluation program for modeling a plurality of physical phenomena related to a film formation process and evaluating a shape of a deposited film formed by the film formation process based on the physical model. The medium includes a contribution ratio extraction process for extracting a ratio of each physical phenomenon contributing to the formation of the deposited film at a point on the surface of the deposited film, and causing a computer to execute these processes. A computer-readable recording medium storing a film process evaluation program. 12. The composition according to claim 11, wherein the ratio is extracted as a ratio of a rate of each physical phenomenon to a sum of film formation rates of individual physical phenomena at a point on the surface of the deposited film. A computer-readable recording medium storing a film process evaluation program. 13. The method according to claim 1, wherein the ratio is extracted as a ratio of a film formation rate of each physical phenomenon to a film formation rate of a phenomenon selected from the plurality of physical phenomena at a point on the surface of the deposited film. A computer-readable recording medium storing the film forming process evaluation program according to claim 11. 14. The method according to claim 11, wherein, when the phenomenon is an etching phenomenon, the ratio is extracted assuming that the etching phenomenon contributes in a negative direction to the formation direction of the deposited film. A computer-readable recording medium storing the film formation process evaluation program according to claim 12 or 13. 15. The method according to claim 11, further comprising the step of storing, for each point on the surface of the deposited film, a coordinate value of the point and a ratio for each physical phenomenon. Item 15. A computer-readable recording medium storing the film formation process evaluation program according to Item 14. 16. A plurality of physical phenomena related to a film forming process are modeled, a shape of a deposited film formed by the film forming process is evaluated based on the physical model, and film forming process conditions determined based on the evaluation result. A method of manufacturing a semiconductor device according to claim 1, further comprising: a contribution ratio extracting step of extracting a ratio of each physical phenomenon that contributes to the formation of the deposited film at a point on the surface of the deposited film. Wherein the film forming process conditions are determined by referring to FIG.