JP2001272433A - Method and apparatus for test of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and an apparatus, for the test of a semiconductor device, in which the temperature of the semiconductor device during an electrification test can be measured with good accuracy. SOLUTION: A bias power supply which applies a bias voltage to the semiconductor device is installed. A heater which heats the semiconductor device is installed. In order to measure the temperature of the semiconductor device, a metal wire 24 whose resistance value is changed by a temperature is installed in parallel with a gate electrode 23.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device testing method and apparatus for testing a semiconductor device while being heated and energized.

[0002]

2. Description of the Related Art As one test method for evaluating the reliability of a semiconductor device such as a field-effect transistor, a high-temperature conduction test has conventionally been used. The high-temperature energization test is performed in a state where the semiconductor device is heated and a bias voltage is applied to the semiconductor device.

Here, a conventional method for testing a semiconductor device will be described with reference to FIG. 3 taking a high-temperature conduction test as an example. Reference numeral 31 denotes a heater.
2 are connected. A holding plate 33 is arranged on the heater 31, and a device under test such as a semiconductor device 34 is placed on the holding plate 33.
Is arranged. Terminals T1 to T3 connected to, for example, three electrodes of the semiconductor device 34 are connected to a bias power supply 35, respectively.

In the above configuration, the heater power supply 32
When a current flows from the heater 31 to the heater 31, the heater 31 generates heat. The heat of the heater 31 is transmitted to the semiconductor device 34 via the holding plate 33, and the semiconductor device 34 rises to a temperature higher than room temperature. At the same time, a bias voltage is supplied from a bias power supply 35 to the semiconductor device 34.

As described above, the semiconductor device 34 is heated,
At the same time, a high-temperature energization test for supplying a bias voltage is performed for a desired time, and the reliability of the semiconductor device is estimated from, for example, a change in the characteristics of the semiconductor element before and after the test.

[0006]

The conventional method of testing a semiconductor device is performed while the semiconductor device is heated. In this case, it is important to accurately measure the temperature of the semiconductor device during the high-temperature conduction test in order to evaluate the reliability of the semiconductor device.

Generally, the temperature of a semiconductor device during a high-temperature energization test is represented by the following equation: temperature of semiconductor device = temperature of external heater + self-heating temperature of semiconductor device.

The self-heating temperature of the semiconductor device is theoretically a temperature at which the self-heating generated by the semiconductor device due to energization and the heat flowing from the semiconductor device to the holding plate 303 (FIG. 3) are balanced.

The self-heating temperature of the semiconductor device of the formula (1), that is, the self-heating temperature in a state in which a bias is applied, is measured for several semiconductor devices by using an IR method or the like before performing a test. Will be Using the value measured by this method, the actual temperature of the semiconductor device during the test is estimated.

However, the amount of heat generated by the semiconductor device varies depending on variations in characteristics. Further, there is a difference in the self-heating temperature due to a difference between a state in which the self-heating temperature is measured by using the IR method or the like and a surrounding state in the high-temperature energization test. Further, the heater also has a temperature distribution, and the heating temperature differs depending on the location. Due to such a difference, a discrepancy occurs between the estimated temperature of the semiconductor device and the temperature at the time of the actual test, which causes an error in the test result.

SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned drawbacks and to provide a semiconductor device test method and a test apparatus capable of accurately measuring the temperature of a semiconductor device during a conduction test.

[0012]

A method of testing a semiconductor device according to the present invention includes a first step of applying a bias voltage to each electrode of the semiconductor device, a second step of heating the semiconductor device,
Applying a bias voltage to the semiconductor device, measuring the resistance value of a metal wire having a resistance value that changes with temperature while heating the semiconductor device, and measuring the temperature of the semiconductor device. I have.

According to the present invention, in a test apparatus for a semiconductor device having a bias power supply for applying a bias voltage to the semiconductor device and a heater for heating the semiconductor device, a metal wire whose resistance value changes with temperature is provided. It is characterized by.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the circuit diagram of FIG.

Reference numeral 11 denotes a heater to which a heater power supply 12 is connected. Holding plate 1 on heater 11
3, and a device under test, for example, a semiconductor device 14 such as a field effect transistor is disposed on the holding plate 13. In the case of FIG. 2, the semiconductor device 14 is shown in a state where elements such as a field effect transistor are housed in a package.

In the semiconductor device 14, for example, in the case of a field effect transistor, a gate lead terminal G connected to its gate electrode, a source lead terminal S connected to a source electrode, and a drain lead terminal D connected to a drain electrode are provided. Is provided. The gate lead terminal G and the source lead terminal S are connected to a bias power supply 15a, and the source lead terminal S and the drain lead terminal D are connected to a bias power supply 15b.

The semiconductor device 14 includes the semiconductor device 1.
4, temperature measuring lead terminals t1 and t2 connected to a temperature measuring element, for example, a metal wire (not shown) whose resistance changes with temperature are provided. A measuring device 16 for measuring the resistance value of the metal wire is provided at the lead terminals t1 and t2.
Is connected.

Power supply 12 for heater and bias power supply 15
The a, 15b, and the measuring device 16 are formed as independent circuits that are not electrically connected to each other, and each circuit does not affect other circuits.

Here, the structure of the semiconductor device 14 will be described with reference to the plan view of FIG. The semiconductor device 14 is formed of, for example, a field-effect transistor,
A source electrode 21 and a drain electrode 22 are arranged on both sides, and a gate electrode 23 is located at the center between the source electrode 21 and the drain electrode 22. Source electrode 21
Is connected to the source lead terminal S (FIG. 1), the drain electrode 22 is connected to the drain lead terminal D (FIG. 1), and the gate electrode 23 is connected to the gate lead terminal G (FIG. 1) via the electrode pad 23a. ing.

A temperature measuring element, for example, a resistance depending on temperature, crosses a region between the source electrode 21 and the drain electrode 22 from one side to the other side substantially in parallel with the gate electrode 23 of the semiconductor device 14. A changing metal line 24 is arranged. Both ends of the metal wire 24 are connected to the electrodes 25a and 25b for temperature measurement.
a and 25b are lead terminals t1 and t for temperature measurement, respectively.
2 (FIG. 1).

The semiconductor device 14 and the metal wires 24 having the above-described configurations are housed in a package (not shown), for example.

In the above configuration, the power supply 12 for the heater
From the heater 11 to the heater 11. At this time, the heater 11 generates heat, and this heat is transmitted through the holding plate 13 to the semiconductor device 1.
4 to raise the temperature of the semiconductor device 14 to a temperature higher than room temperature. At the same time, a bias voltage is supplied from a bias power supply 15a, 15b to each electrode of a semiconductor element constituting the semiconductor device 14, for example, a field effect transistor.

As described above, the semiconductor device 14 is heated, and at the same time, a high-temperature energization test for supplying a bias voltage is performed for a desired time. For example, the reliability of the semiconductor device 14 is estimated from a change in characteristics of the semiconductor device 14 before and after the test. Is done. In this case, the resistance value of the metal wire 24 (FIG. 2) is measured with the measuring device 16 (FIG. 1).
And the temperature of the semiconductor device 14 is measured.

According to the above configuration, for example, the resistance value of the metal wire incorporated in the package forming the semiconductor device is measured by the measuring device, and the amount of change in the resistance value of the metal wire from room temperature is determined. The temperature is measured directly. Therefore, when there is a difference in characteristics between semiconductor devices, when there is a temperature distribution in the heater, and when there is a difference between the estimated temperature of the semiconductor device and the actual test temperature, the temperature of the semiconductor device is correctly Measured. As a result, a highly accurate reliability test can be performed.

The circuit to which the measuring device 16 is connected is formed as an independent circuit that is not electrically connected to the heater power supply 12 or the bias power supplies 15a and 15b. Therefore, the measuring device 16 is not affected by the ON / OFF operation of the heater power supply 12 or the power supply voltage of the bias power supply 15, and a good measurement result can be obtained.

The metal wire can be arranged at any position.
However, in the case where the semiconductor device has a temperature distribution, it is desirable to dispose the semiconductor device in a place where the temperature is high or a place close thereto. For example, when the semiconductor device is a field-effect transistor, the temperature near the gate electrode increases, so that a method of arranging the semiconductor device in parallel with the gate electrode as shown in FIG. 2 is effective.

In the above embodiment, the case where the semiconductor element constituting the semiconductor device is a field effect transistor is described. However, the present invention is not limited to a field-effect transistor, but is also applicable to semiconductor devices such as bipolar transistors and other integrated circuits (ICs, LSIs, etc.). Further, the case where the semiconductor device has a structure in which the semiconductor element is incorporated in a package has been described, but the present invention can also be applied to a state where the semiconductor element constituting the semiconductor device is in a wafer state. However, a structure in which a semiconductor device is incorporated in a package with a semiconductor element incorporated therein and a metal wire whose resistance value changes with temperature is also incorporated in the package has an advantage that the temperature of the semiconductor device can be measured more accurately.

[0028]

According to the present invention, a test method and a test apparatus for a semiconductor device capable of performing a high-precision high-temperature conduction test can be realized.

[Brief description of the drawings]

FIG. 1 is a schematic structural diagram for explaining an embodiment of the present invention.

FIG. 2 is a plan view showing a semiconductor device used in the present invention.

FIG. 3 is a schematic structural diagram for explaining a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 ... Heater 12 ... Heater power supply 13 ... Holding plate 14 ... Semiconductor device 15a, 15b ... Bias power supply 16 ... Measuring instrument 21 ... Source electrode 22 ... Drain electrode 23 ... Gate electrode 24 ... Metal wire

Claims (9)

[Claims] 1. A method of applying a bias voltage to each electrode of a semiconductor device, measuring a resistance value of a metal wire provided in the semiconductor device, the resistance value of which changes according to a temperature, while heating the semiconductor device, A method for testing a semiconductor device, comprising measuring a temperature of the semiconductor device. 2. A method for applying a bias voltage to each electrode of a semiconductor device, wherein the resistance value of a metal wire whose resistance value changes according to the temperature stored in a package forming the semiconductor device in a state where the semiconductor device is heated is determined. A method for testing a semiconductor device, comprising measuring. 3. A semiconductor device comprising: a bias power supply for applying a bias voltage to each electrode of the semiconductor device; a heater for heating the semiconductor device; and a metal wire provided in the semiconductor device and having a resistance value that changes with temperature. A testing device for a semiconductor device, comprising: 4. A semiconductor device comprising: a bias power supply for applying a bias voltage to each electrode of the semiconductor device; a heater for heating the semiconductor device; and a metal wire having a resistance value which varies depending on the temperature. A measuring device for measuring the temperature of the semiconductor device by measuring the resistance value of the semiconductor device. 5. The test apparatus for a semiconductor device according to claim 3, wherein the semiconductor device is a field-effect transistor, and wherein the metal line is arranged in parallel with a gate electrode of the field-effect transistor. . 6. The semiconductor device according to claim 1, wherein the semiconductor device is a field-effect transistor, and the metal line is arranged between a source electrode and a drain electrode of the field-effect transistor and parallel to a gate electrode. The semiconductor device test apparatus according to claim 3 or 4. 7. A semiconductor device, comprising: a bias power supply for applying a bias voltage to each electrode of the semiconductor device; a heater for heating the semiconductor device; and a metal wire provided in a package constituting the semiconductor device, the resistance of which changes depending on the temperature. A testing device for a semiconductor device, comprising: 8. A package comprising the semiconductor device, comprising: a bias power supply for applying a bias voltage to each electrode of the semiconductor device; a heater for heating the semiconductor device; and a metal wire having a resistance value which varies depending on the temperature. A measuring device for measuring the temperature of the semiconductor device by measuring a resistance value of the metal wire. 9. A circuit of a measuring means for measuring a temperature of the semiconductor device by measuring a resistance value of a metal wire, comprising: a circuit of a bias power supply for applying a voltage to each electrode of the semiconductor device; 9. The test apparatus for a semiconductor device according to claim 4, wherein the test apparatus is independent of a heater circuit for heating.