JP2001232599A - Three-dimensional structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a three-dimensional structure useful as a hardened resist (recessed) for forming a partition or a column such as FED or PDP and expectedly useful as parts of a micromachine or its casting mold. SOLUTION: A striped hardened resist having a height of 200 μm or more is provided on a substrate. Further, the striped hardened resist is provided with a reinforcing hardened resist in contact with its side face and the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fine three-dimensional structure, and more particularly to a three-dimensional structure useful for forming a partition or a pillar of an FED (field emission display) or the like, or for forming a micromachine.

[0002]

2. Description of the Related Art In recent years, with the development of communication devices and computers, display devices have been rapidly developed, and flat panel displays have been actively developed.

As such a flat panel type display, a liquid crystal panel, a plasma display panel (PDP), a field emission display (FED) and the like can be cited. Among them, the FED is a conventional one in principle. While emitting light by electron beam excitation like a CRT,
This is a display system that has advantages such as a screen display without distortion, a self-luminous type, a display quality comparable to a CRT, a wide viewing angle, and a fast response time.

In the FED, a phosphor provided on one of the substrates emits an electron beam from the other substrate to emit light. The cell (between the substrates) is filled with a gas and a phosphor to apply a voltage. Different from PDP that emits light by several meters
m (usually about 1 to 3 mm), and at this time, about 1 mm is also required for the partition walls and the columns that constitute the cell.

[0005] In order to form such a partition or a support, a device is required.

That is, in a method of forming a pattern (concave type) with a photosensitive resin composition, embedding a material for partition walls and columns (usually a glass paste) in the pattern, and solidifying and removing the pattern after solidification, It is also necessary to increase the height of the pattern even when the glass paste having a height of several mm is buried and fixed in the recess instead of the glass paste. Therefore, it is necessary to devise measures such as stacking the layers of the photosensitive resin composition to secure the height.

For example, Japanese Patent Application Laid-Open No. 3-219910 describes a method in which a plurality of layers of the photosensitive resin composition are laminated and then exposed and developed to form a pattern.

[0008]

However, the above-mentioned method is disadvantageous in terms of work because it takes time and labor to laminate many layers, and much more time is required for forming a pattern having a height of about 1 mm. Even if the pattern is formed with a lot of trouble, the pattern may not be stable because the height of the pattern is high, and precise pattern formation may not be possible. Therefore, improvement is desired.

Under such a background, an object of the present invention is to provide a stable pattern which is easy to form and has a height of about 1 mm.

[0010]

The inventors of the present invention have conducted intensive studies in order to solve such a problem. As a result, a cured resist having a stripe shape having a height of 200 μm or more is provided on a substrate. It has been found that the three-dimensional structure formed by providing the reinforcing cured resist portion in contact with the side surface and the base material of the striped cured resist matches the above-mentioned target pattern, and completed the present invention. Was.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described specifically.

The three-dimensional structure of the present invention is obtained by providing (forming) a cured resist on a base material. Examples of such a base material include a glass substrate such as an FED and a PDP, and a Si substrate. Further, a glass substrate and a plastic substrate (including a film) on which a metal thin film of gold, polycrystalline Si, Cr, or the like is formed, and the like are not particularly limited.

The cured resist is obtained by curing a photosensitive resin composition with light or heat such as ultraviolet rays or a laser beam. The photosensitive resin composition comprises a base polymer (A), an ethylenically unsaturated compound. (B) and a photopolymerization initiator (C), wherein the base polymer (A)
As the resin, an acrylic resin, a polyester resin, a polyurethane resin, and the like are used. Among these, (meth) acrylate is a main component, and an ethylenically unsaturated carboxylic acid or another copolymerizable resin can be used as necessary. Acrylic copolymers obtained by copolymerizing monomers are preferably used. Also,
An acetoacetyl group-containing acrylic copolymer can also be used.

Here, the (meth) acrylic acid ester includes methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, hexyl (meth) acrylate,
-Ethylhexyl (meth) acrylate, cyclohexyl (meth) acrylate, benzyl (meth) acrylate, dimethylaminoethyl (meth) acrylate, hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, glycidyl (meth) acrylate, and the like. You.

As the ethylenically unsaturated carboxylic acid, monocarboxylic acids such as acrylic acid, methacrylic acid and crotonic acid are preferably used, and in addition, dicarboxylic acids such as maleic acid, fumaric acid and itaconic acid, or Their anhydrides and half esters can also be used. Of these, acrylic acid and methacrylic acid are particularly preferred.

When the photosensitive resin composition is of a dilute alkali developing type, the above ethylenically unsaturated carboxylic acid is contained in an amount of about 15 to 30% by weight (acid value of 100 to 200 mg KOH).
/ G) copolymerization is required. Examples of other copolymerizable monomers include acrylamide, methacrylamide, acrylonitrile, methacrylonitrile, styrene, α-methylstyrene, vinyl acetate, and alkyl vinyl ether.

As the ethylenically unsaturated compound (B),
Ethylene glycol di (meth) acrylate, diethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, butylene glycol di (meth) acrylate, neopentyl Glycol di (meta)
Acrylate, 1,6-hexane glycol di (meth)
Acrylate, trimethylolpropane tri (meth) acrylate, glycerin di (meth) acrylate, pentaerythritol di (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol penta (meth) acrylate, 2,2-bis (4 -(Meth) acryloxydiethoxyphenyl) propane, 2,2-bis- (4- (meth) acryloxypolyethoxyphenyl) propane, 2-hydroxy-3-
(Meth) acryloyloxypropyl (meth) acrylate, ethylene glycol diglycidyl ether di (meth) acrylate, diethylene glycol diglycidyl ether di (meth) acrylate, diglycidyl phthalate di (meth) acrylate, glycerin triacrylate, glycerin poly Examples include polyfunctional monomers such as glycidyl ether poly (meth) acrylate.

An appropriate amount of a monofunctional monomer can be used together with these polyfunctional monomers. Examples of such a monofunctional monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, -Hydroxybutyl (meth) acrylate, 2-
Phenoxy-2-hydroxypropyl (meth) acrylate, 2- (meth) acryloyloxy-2-hydroxypropyl phthalate, 3-chloro-2-hydroxypropyl (meth) acrylate, glycerin mono (meth)
Acrylate, 2- (meth) acryloyloxyethyl acid phosphate, half (meth) acrylate of a phthalic acid derivative, N-methylol (meth) acrylamide and the like can be mentioned.

Examples of the photopolymerization initiator (C) include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin n
-Butyl ether, benzoin phenyl ether, benzyl diphenyl disulfide, benzyl dimethyl ketal, dibenzyl, diacetyl, anthraquinone, naphthoquinone, 3,3'-dimethyl-4-methoxybenzophenone, benzophenone, 4,4'-bis (dimethylamino) benzophenone, , 4'-bis (diethylamino) benzophenone, pivaloin ethyl ether, 1,
1-dichloroacetophenone, pt-butyldichloroacetophenone, hexaarylimidazole dimer (eg, 2,2′-bis (o-chlorophenyl) 4
5,4 ′, 5′-tetraphenyl-1,2-biimidazole), 2,4-diethylthioxanthone, 9-phenylacridine and the like.

The mixing ratio of the above (A) to (C) is not particularly limited, but the base polymer (A) 100
75 parts by weight of ethylenically unsaturated compound (B)
It is preferred that the compound be contained in an amount of from 500 to 500 parts by weight (more preferably from 150 to 450 parts by weight).
If the amount is less than 5 parts by weight, poor curing of the photosensitive resin composition or a delay in the developing speed will be caused. On the other hand, if it exceeds 500 parts by weight, the peeling speed of the cured resist of the photosensitive resin composition will be undesirably reduced. Further, the photopolymerization initiator (C) has a total amount of 10% of the base polymer (A) and the ethylenically unsaturated compound (B).
It is preferably 0.1 to 20 parts by weight with respect to 0 parts by weight, and if the photopolymerization initiator (C) is less than 0.1 part by weight, curing will be insufficient and sufficient strength of the three-dimensional structure will not be obtained. Conversely, if the amount exceeds 20 parts by weight, the width of the stripe of the three-dimensional structure may be disturbed, or the structure may collapse during development, which is not preferable.

The photosensitive resin composition used in the present invention comprises:
As described above, the resin composition comprises (A) to (C), but in the present invention, a dye (colored or colored), an adhesion-imparting agent, a plasticizer, an antioxidant is used as long as the object of the present invention is not impaired. Agents, solvents, surface tension modifiers, stabilizers, chain transfer agents,
Additives such as an antifoaming agent, a flame retardant, and an inhibitor can also be appropriately added.

In producing the three-dimensional structure of the present invention, a layer of a photosensitive resin composition having a height (thickness) of 200 μm or more is formed on a substrate, and then a pattern mask is placed thereon.
The cured resist is formed by exposing it to active energy rays such as ultraviolet rays and laser beams, and then the photosensitive resin composition in the unexposed portion (uncured portion) is removed (developed).
In the present invention, in addition to the hardened resist formed in a stripe shape, the hardened resist in the striped shape has a reinforcing hardened resist portion (hereinafter simply referred to as a reinforcing portion) in contact with the side surface and the base material. The main feature is that the reinforcing portion is provided, and the reinforcing portion can be formed after the formation of the stripe-shaped cured resist. In this method, it is easy to produce the reinforcing portion at the same time as producing the stripe-shaped cured resist, and such a method will be further described.

Simultaneous production of such a striped cured resist and a reinforcing portion can be achieved by using a pattern mask as shown in FIGS.

That is, in addition to the stripe pattern, the stripes are connected to the stripe at an angle perpendicular to the stripe or at an arbitrary angle (an angle formed with the stripe is preferably 10 to 90 degrees, more preferably 45 to 90 degrees). By using a pattern mask having a patterned portion (integrated), a reinforcing portion can be manufactured at the same time.

The shape of the pattern mask of the pattern portion (reinforcing portion) connected to the stripe is not particularly limited, and may be a rectangle, a square, a parallelogram, a rhombus, etc., and is not particularly limited. Further, the width (length of c ′) of the pattern having such a shape cannot be unconditionally determined due to the width and interval of the stripe pattern, the height of the target three-dimensional structure, and the like. c ′) is 50 μ
m or more (more preferably 50 to 500 μm, especially 75 to 450 μm)
μm) is preferable, and if the width is less than 50 μm, the mechanical strength of the obtained cured striped resist is undesirably reduced. Further, the length (d ′) of the pattern is not particularly limited, and may be shorter than the width (b ′) of the stripe as shown in FIG. 2, and further, as shown in FIG. May be connected in a grid pattern (or a staggered grid pattern). Also, the pattern part
The stripe and the reinforcing portion (pattern) may be patterned so as to form a polygon such as a hexagon. still,
The intended three-dimensional structure can be obtained by using the above-mentioned pattern mask, and usually, the width and length of the pattern of the pattern mask and the width and length of the putter of the obtained cured resist are almost the same. (A = a ', b = b', c
= C ', d = d'). When the pattern has a lattice shape, b = d.

Thus, the three-dimensional structure of the present invention can be obtained. There is no particular limitation on the height of the striped cured resist as long as it is 200 μm or more. Assuming 500μ
m to 5 mm (more preferably 1 to 3 mm). Further, the width and interval of the stripe-shaped resist are determined by the shape of the above-mentioned pattern mask, and a pattern mask suitable for the intended width and interval may be used.

The production of the three-dimensional structure of the present invention will be described in more detail. To form a layer of the photosensitive resin composition on a substrate, the photosensitive resin composition is coated to a predetermined thickness. In this case, it is possible to repeat the coating a plurality of times. However, it is preferable to reduce the number of coating by performing thick coating as much as possible from the viewpoint of operability. In addition, in forming the layer of the photosensitive resin composition, considering the simplicity of the operation that the coating and drying step can be omitted, the ease of handling, the uniformity of the resist layer thickness, the thick film moldability, etc., It is sometimes advantageous to use a dry film before use. A known method is used for forming the photosensitive resin composition into a dry film, that is, a laminate for a dry film resist. For example, the photosensitive resin composition may be a base film such as a polyester film, a polypropylene film, and a polystyrene film. After coating on the surface, a method of coating a protective film such as a polyethylene film and a polyvinyl alcohol-based film from above the coated surface to form a laminate for a dry film resist, but is not limited thereto. .

At this time, the thickness of the photosensitive resin composition layer may be determined in consideration of the height of the finally formed striped cured resist. In some cases, it may be considered to laminate two or more layers of the laminate.

Hereinafter, a method using such a laminate for a dry film resist will be described step by step, but the present invention is not limited to this method. [Formation and exposure of layer of photosensitive resin composition] In order to form a layer of a photosensitive resin composition on a substrate by a laminate for dry film resist, first, the base film of the laminate for dry film resist is used Compare the adhesive strength with the layer of the photosensitive resin composition and the adhesive strength between the protective film and the layer of the photosensitive resin composition, and peel the lower adhesive strength film from the layer of the photosensitive resin composition. After the side is adhered to the surface of the base material on which a cured resist is to be formed, the above-mentioned specific pattern mask is brought into close contact with the other film and exposed. When the photosensitive resin composition has no tackiness, the other film may be peeled off, and then the pattern mask may be brought into direct contact with the photosensitive resin composition layer for exposure.

The laminate may be preliminarily laminated so as to have a required thickness depending on the desired height of the cured resist, and this laminate may be used as a laminate for a dry film resist. In this case, it is desirable to remove the base film or the protective film so that the laminated photosensitive resin compositions are in direct contact with each other.

When the photosensitive resin composition is applied directly to the substrate surface without using the above-mentioned laminate, a pattern mask is brought into contact with the applied surface directly or via a polyester film or the like, and the substrate is exposed to light. do it.

Exposure is usually carried out by irradiation with ultraviolet rays, and as a light source at that time, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a carbon arc lamp, a xenon lamp, a metal halide lamp, a chemical lamp or the like is used. After irradiation with ultraviolet rays, heating can be performed as necessary to complete the curing. [Development] After exposure, the film on the resist is peeled off and then developed.

When the photosensitive resin composition is a dilute alkali developing type, development after exposure is carried out using a dilute aqueous solution of about 0.1 to 2% by weight of an alkali such as sodium carbonate or potassium carbonate. .

It is also possible to increase the pattern accuracy by performing sandblasting after alkali development.

By this developing treatment, the desired three-dimensional structure is obtained on the base material.

In the present invention, a treatment such as a heat treatment can be performed if necessary.

The three-dimensional structure thus obtained is also very useful as a cured resist for forming high barrier ribs such as FEDs.
A method for manufacturing a partition wall and a support for D will be described.

In order to manufacture such partition walls and columns, the cured resist (stripe-shaped cured resist and reinforcing portion) is filled after filling the material of the partition walls and columns (usually a ceramic material) into the recesses of the three-dimensional structure obtained above. By removing, a desired partition wall or support can be formed.

The ceramic material is not particularly limited, but is usually a low-melting glass frit, an aggregate,
An organic paste material in which a heat-resistant pigment or the like is dispersed in an organic binder resin or a water glass containing sodium silicate (1)
No. 3 to No. 3 can be used), and as the skeleton, silica, alumina, zirconia, SiC, BN, S
US, mica, and the like, and heat-resistant pigments include chromium oxide, iron oxide, cobalt oxide, titanium oxide, copper oxide, and aluminum. Further, additives such as a curing agent, a stabilizer, and a dispersant may be added to the paste material. As the binder resin used for the ceramic material, epoxy resin, novolak resin, polyimide resin, acrylic resin, phenol resin,
Cellulose-based resins, vinyl acetate-based resins and the like can be mentioned.

As a method of filling the ceramic material, the ceramic material is poured into the concave (opening) portion,
A squeegee or scraper made of rubber, metal, or the like is moved in parallel with the substrate while being in contact with the upper part of the cured resist to remove the excess ceramic material that has protruded, and at the same time, fill the opening without excess or shortage. ~
Drying is performed at about 120 ° C. to remove a solvent or moisture in the ceramic material. This filling step may be repeated a plurality of times as necessary.

As a method for forming the glass partition walls and the glass pillars, a small amount of a low-melting glass frit or water glass is poured into the above-mentioned concave portion, and a thin glass sheet prepared beforehand (the thickness is several μm thinner than the width of the concave portion). ) Or a bar-shaped glass (having a cross-sectional shape that can be inserted into such a concave portion), and then subjected to the following firing.

In removing the above cured resist,
Although not particularly limited, a firing method capable of simultaneously binding a ceramic material on a substrate is desirable. In such baking, it is possible to use a mesh belt furnace or the like in which the peak temperature is set to about 500 to 700 ° C. to eliminate the hardened resist and bind the above ceramic material onto the substrate to form partition walls and columns. it can.

[0043]

The present invention will be specifically described below with reference to examples.

In the examples, “parts” and “%” are based on weight unless otherwise specified.

Example 1 (Preparation of photosensitive resin composition) Tetraethylene glycol di (meth) acrylate (B) 2 was added to 59 parts of a 50% methyl ethyl ketone solution of the following base polymer (A).
After adding 5 parts, 2.4 parts of benzyldimethyl ketal (C) and 0.05 part of leuco crystal violet, methyl ethyl ketone was further added to prepare a photosensitive resin composition (dope) having a solid concentration of 50%.

Base polymer (A) methyl methacrylate / n-butyl methacrylate / 2
-A copolymer having a copolymerization ratio of ethylhexyl acrylate / methacrylic acid / hydroxyethyl (meth) acrylate of 15/30/15/20/20 (acid value: 130, glass transition point: 40 ° C, weight average molecular weight: 8) 10,000) Using the photosensitive resin composition obtained above, a three-dimensional structure was produced in the following steps. [Formation and exposure of layer of photosensitive resin composition] The obtained dope is applied on a polyester film having a thickness of 20 µm using an applicator, and left at room temperature for 1 minute and 30 seconds.
After drying in an oven at 90 ° C. for 10 minutes, a resist thickness of 15
A dry film resist laminate having a thickness of 0 μm (a polyethylene film having a thickness of 30 μm was provided as a protective film) was obtained.

After laminating this on a glass substrate preheated to 60 ° C., the cover film (polyester film) of the laminate was peeled off, and the newly prepared dry film resist laminate was peeled off the protective film. This surface was laminated, and this operation was repeated seven times to provide a layer of a photosensitive resin composition having a height of 1200 μm.

Next, a pattern mask having a pattern shape as shown in FIG. 2 [stripe width: 300 μm, stripe interval: 250 μm, directly connected pattern portion (reinforcement portion) is formed on the surface of the laminate for dry film resist. Width: 300 μm, directly connected pattern part (reinforcement part)
And the distance between directly connected pattern portions (reinforcement portions): 26000 μm], and exposure was performed at 1200 mJ / cm ² with a 5-kw short arc lamp using a parallel exposure machine “EXM1201” manufactured by Oak Manufacturing Co., Ltd. [Development] After taking a hold time of 15 minutes after the above exposure, a 1% aqueous solution of Na ₂ CO ₃ was sprayed at a pressure of 1.5 kg /
Development was performed at 30 ° C. for 700 seconds under the condition of cm ² to obtain a three-dimensional structure of the present invention as shown in FIG.

When the three-dimensional structure was observed with a scanning electron microscope, it was found that the cured resist had good adhesion to the substrate, and no deformation or inclination of the striped cured resist was observed.

Example 2 A pattern mask having a pattern shape as shown in FIG. 3 [stripe width: 400 μm, stripe interval:
250 μm, width of directly connected pattern portion (reinforcement portion): 25
0 μm, length of directly connected pattern part (reinforcement part): 250
μm, interval between directly connected pattern portions (reinforcement portions): 1000
μm, the pattern of the reinforcing portion is directly connected to the adjacent stripe, and a lattice-like structure] was used to fabricate a three-dimensional structure in the same manner as in Example 1. However, as in Example 1, adhesion to the base material was good. As a result, no deformation or inclination of the stripe-shaped cured resist was observed, and a good cured resist was formed.

Example 3 A pattern mask having a pattern shape as shown in FIG. 4 [stripe width: 250 μm, stripe interval:
400 μm, width of directly connected pattern portion (reinforcement portion): 25
0 μm, spacing between directly connected pattern portions (reinforcement portions): 700
μm, the pattern directly connected to the stripe forms a hexagon]
Was used to produce a three-dimensional structure in the same manner as in Example 1,
As in Example 1, the adhesion to the substrate was good, and no deformation or inclination of the stripe-shaped cured resist was observed, and a good cured resist was formed.

The obtained three-dimensional structure is useful as a mold for molding a member of a micromachine.
It was also possible to use the three-dimensional structure as a member of a micromachine.

Comparative Example 1 A conventional stripe-shaped pattern mask as shown in FIG. 6 [stripe width: 400 μm, stripe interval:
250 μm], a three-dimensional structure was prepared in the same manner as in Example 1. However, floating was observed in the base material and a part of the cured resist, and deformation and inclination were also observed in the stripe-shaped cured resist.

Example 4 A small amount of water glass (sodium silicate) was poured into the concave (opening) portion of the three-dimensional structure obtained in Example 1, and thin glass (220 μm in thickness, 990 μm in length, 2,000 μm in width) was grid-shaped. Is inserted into the concave part of each lattice of the three-dimensional structure formed in (2) so that the height of the glass becomes 2000 μm,
After fixation, baking was performed by passing through a mesh belt furnace set at a peak temperature of 570 ° C. for 15 minutes to eliminate the remaining hardened resist and to increase the height to 2000 μm.
A partition of a thin glass plate of μm was formed.

When the shape of the ceramic pattern formed above was observed with a scanning electron microscope, it was found that the cross-sectional shape of the line (pattern) was good in a rectangular shape, and also had good mechanical strength. It was useful as.

Example 5 A pattern mask having a pattern shape as shown in FIG. 5 [stripe width: 400 μm, stripe interval:
250 μm, width of directly connected pattern portion (reinforcement portion): 25
0 μm, interval between directly connected pattern portions (reinforcement portions): 250
μm, the pattern directly connected to the stripe forms a lattice shape]
Was used to produce a three-dimensional structure in the same manner as in Example 1,
As in Example 1, the adhesion to the substrate was good, and no deformation or inclination of the stripe-shaped cured resist was observed, and a good cured resist was formed.

Next, a concave portion (opening) of the obtained three-dimensional structure was obtained.
A small amount of water glass (sodium silicate) is poured into the portion, and a glass column (200 μm × 200 μm square cross section, length 20)
00 μm) is inserted (standing) into the concave portion of each lattice of the three-dimensional structure formed in a lattice shape, and is fixed.
Firing was performed by passing through a mesh belt furnace set at 70 ° C. for 15 minutes to eliminate the remaining hardened resist and to form glass pillars having a height of 2000 μm.

The obtained glass support was useful as a spacer for a counter substrate for FED.

[0059]

The three-dimensional structure of the present invention can be used for FED and PDP.
It is also very useful as a cured resist (concave type) for forming partition walls such as a micromachine, and further, is used as a mold for obtaining a micromachine, or a three-dimensional structure itself composed of such a cured resist is also used as a component of a micromachine or the like. It is also possible.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram of a three-dimensional structure of the present invention.

FIG. 2 is a partial view of a pattern mask used for manufacturing a three-dimensional structure of the present invention.

FIG. 3 is a partial view of a pattern mask used for manufacturing a three-dimensional structure of the present invention.

FIG. 4 is a partial view of a pattern mask used for manufacturing a three-dimensional structure of the present invention.

FIG. 5 is a partial view of a pattern mask used for manufacturing a three-dimensional structure of the present invention.

FIG. 6 is a partial view of a conventional pattern mask.

[Explanation of symbols]

 1: hardened resist in stripe form 2: hardened resist part (reinforcement part) 3: base material a: width of stripe b: interval between stripes c: width of directly connected pattern part d: length of directly connected pattern part a ': Stripe width (pattern mask) b ': Stripe interval (pattern mask) c': Width of directly connected pattern part (pattern mask) d ': Length of directly connected pattern part (pattern mask) e': Directly connected pattern Part spacing (pattern mask)

Claims (2)

[Claims] 1. A striped cured resist having a height of 200 μm or more is provided on a base material, and a reinforcing hardened resist portion in contact with the side surface and the base material is provided on the striped cured resist. A three-dimensional structure characterized by comprising: 2. The method according to claim 1, wherein said partition is used to form a partition or a pillar of an FED (field emission display).
The three-dimensional structure as described.