JP2001226586A - Method for manufacturing reinforced wafer and electronic part - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a reinforced wafer that furnishes little wafer breakage, excellent processability and excellent yield in the manufacturing steps of wafers and chips as well as in the transportation steps of the chips, and to provide an electronic part having high reliability, excellent productivity (tact) and good yield. SOLUTION: According to this method for manufacturing a reinforced wafer, an organic or inorganic viscous material is applied to location on the rear surface of a thin wafer, the locations corresponding to the patterns formed on the front surface of the wafer. An electronic part can be manufactured by applying the organic or inorganic viscous material to the locations according to the above method.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a reinforced wafer and an electronic component.

[0002]

2. Description of the Related Art In recent years, with the spread of portable devices, electronic components have been increasingly reduced in size and weight. Correspondingly, the thickness of the wafer has been rapidly reduced. Thin wafers are liable to be broken, and have a problem that workability and product yield in a wafer manufacturing process, a semiconductor device manufacturing process from a wafer, and a manufacturing process for packaging the same are extremely poor.

Conventionally, thin wafers (for example, having a thickness of 15
In order to transport wafers (0 μm or less), the wafers are attached to a dicing tape with an adhesive and transported to prevent cracking. However, after the wafer is diced, chips are separated from the tape. Chip breakage due to the adhesive strength of the steel has become a problem. In particular, in the case where a plurality of grooves are formed on the wafer surface, the wafer thickness at the bottom of the groove is 100%.
It has been pointed out that there is a problem that cracks are generated from the groove portion even when a very small force is applied because the thickness becomes extremely thinner than μm. In addition, when a thin wafer is coated with a heat-resistant resin such as a polyimide resin as a buffer coat film, an adhesive, an insulating film, or a stress relaxation material on the surface, the wafer is warped due to stress generated in these materials. Therefore, there is a problem that the wafer is easily cracked.

[0004]

An object of the present invention is to provide a method of manufacturing a reinforced wafer which is free from cracks in a wafer manufacturing, chip manufacturing or transfer process, has excellent workability, and has an excellent product yield. Is what you do. A second aspect of the present invention provides a method of manufacturing a reinforcing wafer suitable for an electronic component using a groove-formed wafer, in addition to the effects of the first aspect of the present invention. The third aspect of the present invention provides a method of manufacturing a reinforced wafer which further facilitates cutting of a scribe line and has higher productivity in addition to the effects of the first aspect of the present invention.

[0005] The invention described in claim 4 has the effect of further increasing the coating efficiency in addition to the effects of the invention described in claim 1, 2, or 3.
An object of the present invention is to provide a method of manufacturing a reinforced wafer which is excellent in continuous coating property, suppresses bleeding by a simple process and non-contact coating, and can obtain a thick film with reduced bubbles and contamination at low cost. The invention according to claim 5 is the invention according to claims 1, 2,
It is another object of the present invention to provide a method for manufacturing a reinforced wafer having higher productivity (tact) in addition to the effects of the invention described in 3 or 4. The invention according to claim 6 provides, in addition to the effects of the invention according to claim 1, 2, 3, 4, or 5, further applicability, resolution,
An object of the present invention is to provide a method for manufacturing a reinforced wafer having excellent thick film forming properties.

The invention according to claim 7 is based on claims 1 and 2,
Another object of the present invention is to provide a method for producing a reinforced wafer having more excellent applicability in addition to the effects of the invention described in 3, 4, 5 or 6. The invention according to claim 8 is the invention according to claims 1, 2, 3, 4,
In addition to the effects of the invention described in 5, 6 or 7, more resolution,
An object of the present invention is to provide a method for manufacturing a reinforced wafer having excellent thick film forming properties.

[0007] The invention according to claim 9 is based on claims 1, 2,
In addition to the effects of the invention described in 3, 4, 5, 6, 7 or 8,
Another object of the present invention is to provide a method for producing a reinforced wafer having excellent heat resistance. According to a tenth aspect of the present invention, in addition to the effects of the ninth aspect, there is provided a method of manufacturing a reinforced wafer having further excellent mechanical properties, dielectric strength, and the like. The invention according to claim 11 has high reliability and productivity (tact).
It is intended to provide an electronic component which is excellent in product yield and product yield.

[0008]

According to the present invention, there is provided a method of manufacturing a reinforced wafer, which comprises applying an organic or inorganic viscous material to a back surface of a wafer corresponding to a pattern formed on the surface of a thin wafer. About. Further, according to the present invention, the pattern formed on the thin wafer surface is a groove,
The present invention relates to a method for manufacturing the reinforcing wafer, wherein an organic or inorganic viscous material is applied to a rear surface portion of a thinner groove bottom. The present invention also relates to a method for manufacturing the reinforcing wafer, wherein the pattern formed on the thin wafer surface is a scribe line, and an organic or inorganic viscous material is applied to a portion other than the scribe line.

The present invention also relates to a method of applying an organic or inorganic viscous material, wherein the discharge speed of the organic or inorganic viscous material from a nozzle is changed by changing the pressure of a gas applied to the organic or inorganic viscous material. The present invention relates to a method for manufacturing the reinforcing wafer to be applied in a non-contact manner while adjusting the thickness of the wafer. In addition, the present invention relates to a method for manufacturing the reinforcing wafer, in which an organic or inorganic viscous material is continuously applied in one stroke. In the present invention, the nozzle is a hole-shaped nozzle, and the ratio of the diameter (D1) of the columnar organic or inorganic viscous material discharged from the nozzle to the inner diameter (D2) of the hole-shaped nozzle [(D1)
/ (D2)] is 4 or less.

[0010] The present invention also relates to a method for producing the reinforcing wafer, wherein the viscosity of the organic or inorganic viscous material is 1 to 1000 Pa · s. Further, the present invention relates to a method for producing the reinforcing wafer, wherein the organic or inorganic viscous material exhibits thixotropic properties.

[0011] The present invention also relates to the method of manufacturing a reinforcing wafer, wherein the organic viscous material contains a heat-resistant resin having an amide bond, an imide bond, an ester bond or an ether bond. Further, the present invention provides that the organic viscous material comprises (I) heat-resistant resin A, (II) heat-resistant resin B and (II)
I) Contains a solvent and (II) heat-resistant resin B before heating and drying
Is present as a heterogeneous phase with respect to the homogeneous phase composed of (I) heat-resistant resin A and (III) solvent, and after heating and drying, (I) heat-resistant resin A, (II) heat-resistant resin B and (III) )
The present invention relates to a method for producing the reinforcing wafer, which is a paste of a heat-resistant resin in which a solvent exists as a uniform phase. Further, the present invention provides a method for manufacturing the reinforcing wafer on the back surface of the wafer corresponding to the pattern formed on the surface of the thin wafer,
The present invention relates to an electronic component formed by applying an organic or inorganic viscous material.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a reinforced wafer according to the present invention is characterized in that an organic or inorganic viscous material is applied to the back surface of a wafer corresponding to a pattern formed on the surface of a thin wafer. It is.

Examples of the thin wafer in the present invention include a silicon wafer having a thickness of 300 μm or less, particularly 150 μm or less, and a compound semiconductor wafer such as Ga / As. These thin wafers have patterns formed on the surface. Examples of the pattern formed on the surface of the thin wafer include a groove and a scribe line. The thickness from the bottom of the groove or the scribe line to the back surface of the thin wafer is usually 200 μm or less, particularly 100 μm or less. The lower limit of the thickness from the bottom to the back surface of the thin wafer is usually 5 to 10 μm. Also,
The scribe line does not need to be thinner than the thin wafer, and may have the same thickness as the thin wafer itself (for example, marking printing).

The shape of the groove in the present invention may be any shape, for example, a round or polygonal independent groove or a continuous lattice-like groove. The groove is usually formed by a chemical etching method or a mechanical cutting method.
The dimensions of the groove are arbitrary, but usually the width is 5
Those having a depth of 0 to 1000 μm and a depth of 5 to 200 μm are used. Further, the center interval (pitch) between the grooves is arbitrary, but usually, 50 to 20,000 μm is used.

In applying the organic or inorganic viscous material in the present invention, a preferable atmosphere is a dry gas atmosphere. The preferred relative humidity of this dry gas atmosphere is 50%
Or less, more preferably 30% or less, particularly preferably 10% or less.
% Or less. When the relative humidity exceeds 50%, particularly in the case of a viscous material having a strong hygroscopic property, the viscosity change and solidification of the organic or inorganic viscous material tend to easily occur due to moisture absorption from the atmosphere.

As the method of applying the organic or inorganic viscous material in the present invention, any method may be used. However, in consideration of environmental aspects, application efficiency and cost, a screen printing method or a method of applying a nozzle of the organic or inorganic viscous material through a nozzle is used. It is preferable to use a method of applying in a non-contact manner while adjusting the discharge speed of the liquid by changing the pressure of the gas applied to the organic or inorganic viscous material. Use a method with higher application efficiency, excellent continuous application properties, simple process and non-contact application to suppress bleeding, reduce bubbles and contamination, and obtain a thick film at low cost. Is more preferred.

In this method, the organic or inorganic viscous material is discharged from an appropriate nozzle, and the pressure of the gas applied at this time depends on the shape and size of the nozzle opening,
It is determined in consideration of the viscosity of the viscous material, the application speed, the film thickness, and the like, and is usually preferably selected from the range of 0.001 to 1 MPa (gauge pressure). In addition, air, nitrogen gas, or the like is used as the gas to be used.

In the present invention, the organic or inorganic viscous material is applied to the back surface of the wafer corresponding to the pattern formed on the surface of the thin wafer, and if necessary, heated or dried to form a film.

In the case where the pattern formed on the surface of the thin wafer is a groove, and the surface or the back surface of the thin wafer other than the groove portion is used for an electronic component (including a semiconductor device) used as an electrode surface, it becomes more difficult. It is preferable to apply an organic or inorganic viscous material to only the back surface portion of the thin groove bottom or the entire or a part other than the portion used as an electrode.

In particular, in a process of manufacturing a mesa-type power device (for example, a diode, a transistor, a thyristor, etc.) in which a lattice-shaped or independent-shaped groove is formed at a wafer level, before or after forming the groove. The method of applying an organic or inorganic viscous material only to the back surface of the groove bottom not only secures the electrode surface required as a device, but also reinforces the wafer and eliminates cracks, resulting in poor workability, productivity, and product yield. It is preferable in that it greatly improves.

In addition, since a thick inorganic or organic junction coat film is formed as an insulating film in the mesa groove of the mesa type power device, the wafer is warped by stress generated in these materials, and thereby the wafer is broken. However, if a material having the same composition as the junction coat film is applied to the back surface of the groove bottom as an inorganic or organic viscous material, the warpage is reduced by offsetting the stress generated on the groove side. Can be. This coating method has a remarkable effect as the size of the wafer increases.

When an inorganic or organic viscous material is applied only to the back surface of the wafer, it is useful to use a low-modulus inorganic or organic viscous material to reduce the warpage of the wafer.
In addition, a method of applying an inorganic or organic viscous material to portions other than the scribe lines on the back surface of the wafer is preferably used because the life of the blade of the dicing blade can be improved and the cost can be reduced.

The inorganic or organic viscous material of the present invention is applied to the back surface of a thin wafer to reinforce the wafer and reduce the warpage of the wafer, and is used for electronic parts such as semiconductor devices and wiring boards. In the present invention, the temperature at the time of heating or drying of the inorganic or organic viscous material is 4 in the case of the organic viscous material.
The temperature is preferably set to 00 ° C. or lower. When the temperature exceeds 400 ° C., thermal decomposition of the organic viscous material tends to easily occur. In addition, in the case of using an inorganic viscous material, when firing to form a pattern film, it is preferably performed at a temperature equal to or higher than the thermal decomposition temperature of an organic substance, and a temperature range of 500 to 1500 ° C. is usually used. When only drying the solvent is carried out, usually 50 to
A temperature range of 500 ° C. is used.

The organic or inorganic viscous material in the present invention is not particularly limited as long as it is preferably an organic or inorganic compound of 1 to 1000 Pa · s (25 ° C.). When the viscosity is less than 1 Pa · s, the organic or inorganic viscous material easily flows out of the discharge port spontaneously, so the end of the discharge port must be reduced, and a thick film tends to be difficult to obtain. film,
High resolution tends to be difficult to obtain. When the viscosity exceeds 1000 Pas, bubbles mixed in the organic or inorganic viscous material are difficult to be removed, so that a pressure loss is likely to occur when the organic or inorganic viscous material is discharged, and a pattern film without continuous defects is formed. The viscosity tends to be too high, and the workability tends to be poor because the viscosity is too high.

As the organic or inorganic viscous material in the present invention, those exhibiting thixotropic properties are preferably used. When a solution is used for an organic or inorganic viscous material in the present invention, it is preferably 1 to 1000 Pa · s, and 10 to 300 Pa More preferably, s.

When a paste is used as the organic or inorganic viscous material in the present invention, the thixotropy coefficient is preferably 1.5 or more, considering the workability and the film thickness at the time of application. More preferably, it is from 10 to 10. Further, the viscosity is preferably from 10 Pa · s to 800 Pa · s, more preferably from 50 Pa · s to 500 Pa · s. Paste with high viscosity and high thixotropy coefficient has a large viscosity drop due to the high shear force received when ejected from the nozzle and has excellent coatability, and the paste applied to the wafer immediately recovers viscosity and forms Is preferably used for forming a thick film with good resolution. Here, the thixotropy coefficient was measured using an E-type viscometer (EHD-U type, manufactured by Tokimec Co., Ltd.) at a sample amount of 0.4 g and a measurement temperature of 25 ° C., and the number of rotations was 1 min.
^-1 and 10 min ^-1 apparent viscosity ratio of η1 and η10, η1 /
Expressed as η10.

For forming a thick film, it is preferable to use a viscous material having a high solid content concentration. In an organic viscous material containing a solvent (for example, a polyimide resin or a precursor thereof),
Usually, 10 to 50% is used.

In the present invention, the discharge speed of the organic or inorganic viscous material from the nozzle is adjusted by changing the pressure of the gas applied to the organic or inorganic viscous material.
When a non-contact coating method uses a hole-shaped nozzle, the ratio of the diameter (D1) of the columnar organic or inorganic viscous material discharged from the nozzle to the inner diameter (D2) of the hole-shaped nozzle [(D1) / (D2)] is preferably 4 or less. If (D1) / (D2) exceeds 4, the organic or inorganic viscous material discharged from the nozzle tends to bead at the tip of the nozzle, and it tends to be difficult to obtain a stable coating amount and resolution. In particular, when the nozzle is a hole nozzle and the nozzle diameter is 0.3 mm or less, (D1)
/ (D2) is preferably 3 or less, particularly preferably 2.5 or less.

(D1) / (D2) are the characteristics (viscosity, thixotropic coefficient, etc.) of an organic or inorganic viscous material,
It is controlled by optimizing the application conditions (application speed, distance between nozzle and substrate surface, application pressure, etc.).

As the organic viscous material in the present invention,
A resin containing a heat-resistant resin is preferably used. As the heat-resistant resin, for example, a 1% weight loss starting temperature is 2%.
It is preferably at least 50 ° C, more preferably at least 300 ° C, particularly preferably at least 350 ° C.
If the 1% weight loss start temperature is less than 250 ° C., outgas is likely to be generated during a heat treatment step at a high temperature, for example, during solder reflow or wire bonding, and the reliability of electronic components tends to be reduced. The 1% weight loss starting temperature is, for example, TG-DT manufactured by Seiko Electronic Industry Co., Ltd.
It can be measured in the air at a rate of temperature rise of 10 ° C./min by using Model A300. The sample amount is preferably 10 mg.

Examples of the heat-resistant resin include those having an amide bond, an imide bond, an ester bond or an ether bond. Specifically, epoxy resin,
Phenol resin, phenoxy resin, polyphenylene ether resin, polyester resin, polyimide resin, polyamide imide resin, polyamide resin and the like can be mentioned. As for the polyimide resin and the polyamideimide resin, a polyamic acid resin or a partially imidized resin thereof which is a precursor thereof may be used. The viscous material containing the heat-resistant resin may be thermoplastic or thermosetting.

In consideration of heat resistance, dielectric strength and cost for use as a semiconductor material, a polyimide resin obtained by reacting an aromatic tetracarboxylic dianhydride with an aromatic diamine compound (polyamic acid resin as a precursor) Is preferable.

As the aromatic tetracarboxylic dianhydride, for example, pyromellitic dianhydride, 3,3′4,
4'-biphenyltetracarboxylic dianhydride, 2,
2 ', 3,3'-biphenyltetracarboxylic dianhydride, 2,3,3', 4'-biphenyltetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride Anhydride, 2,2-bis (2,3-dicarboxyphenyl) propane dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane dianhydride,
1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, bis (2,3-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl)
Sulfone dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, benzene-1,2,3,4-
Tetracarboxylic dianhydride, 3,4,3 ', 4'-benzophenonetetracarboxylic dianhydride, 2,3,2',
3'-benzophenonetetracarboxylic dianhydride, 2,
3,3, ', 4'-benzophenonetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, , 2,4,5-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,
4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-tetrachloronaphthalene-
1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis ( 3,4-dicarboxyphenyl)
Methylphenylsilane dianhydride, bis (3,4-dicarboxyphenyl) diphenylsilane dianhydride, 1,4-
Bis (3,4-dicarboxyphenyldimethylsilyl)
Benzene dianhydride, 1,3-bis (3,4-dicarboxyphenyl) -1,1,3,3-tetramethyldicyclohexane dianhydride, p-phenylene bis (trimellitic acid monoester anhydride) 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis [4- (3,4-dicarboxyphenoxy) phenyl] hexafluoropropane dianhydride,
2,2-bis [4- (3,4-dicarboxyphenoxy) phenyl] propane dianhydride, 4,4-bis (3
4-dicarboxyphenoxy) diphenylsulfide dianhydride, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitate anhydride), 1,3-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitate) Anhydride),
1,2- (ethylene) bis (trimellitate anhydride),
1,3- (trimethylene) bis (trimellitate anhydride), 1,4- (tetramethylene) bis (trimellitate anhydride), 1,5- (pentamethylene) bis (trimellitate anhydride), 1,6- (hex Methylene) bis (trimellitate anhydride), 1,7- (heptamethylene) bis (trimellitate anhydride), 1,8- (octamethylene) bis (trimellitate anhydride), 1,9-
(Nonamethylene) bis (trimellitate anhydride), 1,
10- (decamethylene) bis (trimellitate anhydride), 1,12- (dodecamethylene) bis (trimellitate anhydride), 1,16- (hexadecamethylene) bis (trimellitate anhydride), 1,18- (octadeca Methylene) bis (trimellitate anhydride) and the like,
These are used alone or in combination of two or more.

The above-mentioned aromatic tetracarboxylic dianhydride may, if desired, be prepared by adding a tetracarboxylic dianhydride other than the aromatic tetracarboxylic dianhydride to 50 mol% of the aromatic tetracarboxylic dianhydride. Can be used within a range not exceeding.

As such a tetracarboxylic dianhydride, for example, ethylene tetracarboxylic dianhydride,
1,2,3,4-butanetetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride,
Thiophene-2,3,4,5-tetracarboxylic dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,
5,6,7-hexahydronaphthalene-1,2,5,6
Tetracarboxylic dianhydride, cyclopentane-1,
2,3,4-tetracarboxylic dianhydride, pyrrolidine-
2,3,4,5-tetracarboxylic dianhydride, 1,2,2
3,4-cyclobutanetetracarboxylic dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-
Dicarboxylic anhydride) sulfone, bicyclo- (2,2,
2) -Oct (7) -ene-2,3,5,6-tetracarboxylic dianhydride, 5- (2,5-dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1,2
-Dicarboxylic anhydride, tetrahydrofuran-2,3
4,5-tetracarboxylic dianhydride and the like can be mentioned.

As the aromatic diamine compound, for example,
o-phenylenediamine, m-phenylenediamine, p
Phenylenediamine, 3,3'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether,
3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,
3'-diaminodiphenyldifluoromethane, 4,4 '
-Diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone, 3,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfide, 3,
4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl ketone, 3,4'-diaminodiphenyl ketone,
4,4'-diaminodiphenyl ketone, 2,2-bis (3-aminophenyl) propane, 2,2- (3,4 '
-Diaminodiphenyl) propane, 2,2-bis (4-
Aminophenyl) propane, 2,2-bis (3-aminophenyl) hexafluoropropane, 2,2- (3
4'-diaminodiphenyl) hexafluoropropane,
2,2-bis (4-aminophenyl) hexafluoropropane, 1,3-bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene,
3,3 '-[1,4-phenylenebis (1-methylethylidene)] bisaniline, 3,4'-[1,4-phenylenebis (1-methylethylidene)] bisaniline,
4,4 '-[1,4-phenylenebis (1-methylethylidene)] bisaniline, 2,2-bis [4- (3-aminophenoxy) phenyl] propane, 2,2-bis [4- (4- Aminophenoxy) phenyl] propane,
2,2-bis [4- (3-aminophenoxy) phenyl] hexafluoropropane, 2,2-bis [4- (4
-Aminophenoxy) phenyl] hexafluoropropane, bis [4- (3-aminophenoxy) phenyl] sulfide, bis [4- (4-aminophenoxy) phenyl] sulfide, bis [4- (3-aminophenoxy)
Phenyl] sulfone, bis [4- (4-aminophenoxy) phenyl] sulfone, and the like, which are used alone or in combination of two or more. .

The above-mentioned aromatic diamine compound may be, depending on the purpose, a diamine compound other than the aromatic diamine compound.
It can be used in a range not exceeding 50 mol% of the aromatic diamine compound. Examples of such a diamine compound include 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, and 1,7-diamino Heptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-
Examples thereof include diaminoundecane, 1,3-bis (3-aminopropyl) tetramethyldisiloxane, and 1,3-bis (3-aminopropyl) tetramethylpolysiloxane.

In the present invention, it is preferable that the aromatic tetracarboxylic dianhydride and the aromatic diamine compound are reacted in substantially equimolar from the viewpoint of film properties.

The reaction between the aromatic tetracarboxylic dianhydride and the aromatic diamine compound is usually performed in an organic solvent. Examples of the organic solvent include N-methylpyrrolidone, dimethylacetamide, dimethylformamide, 1,3-dimethyl-3,4,5,6-tetrahydro-2 (1H)-
Pyrimidinone, nitrogen-containing compounds such as 1,3-dimethyl-2-imidazolidinone, sulfur compounds such as sulfolane and dimethyl sulfoxide, γ-butyrolactone, γ-valerolactone, γ-caprolactone, γ-heptalactone, α
Lactones such as -acetyl-γ-butyrolactone, ε-caprolactone, dioxane, 1,2-dimethoxyethane, diethylene glycol dimethyl (or diethyl, dipropyl, dibutyl) ether, triethylene glycol (or diethyl, dipropyl, dibutyl) ether;
Ethers such as tetraethylene glycol dimethyl (or diethyl, dipropyl, dibutyl) ether, ketones such as methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, acetophenone, butanol, octyl alcohol, ethylene glycol, glycerin, diethylene glycol monomethyl (or monoethyl) ether; Alcohols such as triethylene glycol monomethyl (or monoethyl) ether and tetraethylene glycol monomethyl (or monoethyl) ether; phenols such as phenol, cresol and xylenol; ethyl acetate, butyl acetate, ethyl cellosolve acetate;
Esters such as butyl cellosolve acetate, hydrocarbons such as toluene, xylene, diethylbenzene and cyclohexane, trichloroethane, tetrachloroethane,
Halogenated hydrocarbons such as monochlorobenzene are used. These are used alone or in combination of two or more. In consideration of solubility, low hygroscopicity, low-temperature curability, environmental safety, and the like, it is preferable to use lactones, ethers, ketones, and the like.

The reaction temperature of the aromatic tetracarboxylic dianhydride with the aromatic diamine compound is preferably performed at 80 ° C. or lower, more preferably at 0 to 50 ° C. As the reaction proceeds, the reaction solution gradually thickens. In this case, a polyamic acid resin which is a precursor of the polyimide resin is generated. This polyamic acid resin may be partially imidized, which is also included in the precursor of the polyimide resin.

The polyimide resin is obtained by dehydrating and ring-closing the above reaction product (polyamic acid resin). The dehydration ring closure is 12
It can be carried out by a method of heat treatment at 0 ° C. to 250 ° C. (thermal imidization) or a method of using a dehydrating agent (chemical imidization). In the case of a method of performing heat treatment at 120 ° C. to 250 ° C., the heat treatment is preferably performed while removing water generated in the dehydration reaction outside the system. At this time, water may be azeotropically removed using benzene, toluene, xylene, or the like. In the method of performing dehydration ring closure using a dehydrating agent, it is preferable to use an acid anhydride such as acetic anhydride, propionic anhydride, or benzoic anhydride, or a carbodiimide compound such as dicyclohexylcarbodiimide as the dehydrating agent. At this time, if necessary, a dehydration catalyst such as pyridine, isoquinoline, trimethylamine, aminopyridine, imidazole and the like may be used. The dehydrating agent or dehydrating catalyst is
It is preferable to use 1 to 8 moles of each for 1 mole of aromatic tetracarboxylic dianhydride.

In the present invention, the polyamideimide resin or a precursor thereof may be replaced with an aromatic tetracarboxylic dianhydride in the production of the polyimide or a precursor thereof.
It can be produced by using a trivalent tricarboxylic anhydride such as trimellitic anhydride or a trimellitic anhydride derivative such as trimellitic anhydride chloride or a derivative thereof. Further, instead of the aromatic diamine compound and the other diamine compound, a diisocyanate compound having a residue other than an amino group corresponding to the diamine compound can be used. Examples of the diisocyanate compound that can be used include those that can be obtained by reacting the aromatic diamine compound or another diamine compound with phosgene or thionyl chloride.

The polyamide resin of the present invention comprises an aromatic dicarboxylic acid such as terephthalic acid, isophthalic acid or phthalic acid, a derivative such as dichloride or acid anhydride thereof and the above aromatic diamine compound or other diamine compound. It can be produced by reacting.

The heat-resistant resin in the present invention is preferably dissolved in an organic solvent to form a viscous material. As the organic solvent, for example, a solvent described in “Solvent Handbook” (Kodansha, published in 1976), pp. 143 to 852 is used.
For example, N-methylpyrrolidone, dimethylacetamide, dimethylformamide, 1,3-dimethyl-3,
Nitrogen-containing compounds such as 4,5,6-tetrahydro-2 (1H) -pyrimidinone, 1,3-dimethyl-2-imidazolidinone, sulfur compounds such as sulfolane and dimethylsulfoxide, γ-butyrolactone, γ-valerolactone; γ
Lactones such as caprolactone, γ-heptalactone, α-acetyl-γ-butyrolactone, ε-caprolactone, dioxane, 1,2-dimethoxyethane, diethylene glycol dimethyl (or diethyl, dipropyl,
Ethers such as dibutyl) ether, triethylene glycol dimethyl (or diethyl, dipropyl, dibutyl) ether and tetraethylene glycol dimethyl (or diethyl, dipropyl, dibutyl) ether; ketones such as methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, acetophenone; Alcohols such as butanol, octyl alcohol, ethylene glycol, glycerin, diethylene glycol monomethyl (or monoethyl) ether, triethylene glycol monomethyl (or monoethyl) ether, tetraethylene glycol monomethyl (or monoethyl) ether, and phenols such as phenol, cresol, and xylenol , Ethyl acetate, butyl acetate, ethyl cellosolve acetate,
Esters such as butyl cellosolve acetate, hydrocarbons such as toluene, xylene, diethylbenzene and cyclohexane, trichloroethane, tetrachloroethane,
Halogenated hydrocarbons such as monochlorobenzene, and carbonates such as ethylene carbonate and propylene carbonate are used.

Further, it is preferable that the organic or inorganic viscous material in the present invention is given an appropriate thixotropic property. As an organic or inorganic viscous material provided with a suitable thixotropic property, an organic solvent, a heat-resistant resin dissolved therein and a heat-resistant resin paste containing inorganic fine particles or organic fine particles dispersed in a solution. There is something consisting of. By containing inorganic fine particles or organic fine particles, thixotropic properties can be imparted. As the organic solvent, those described above can be used. The inorganic fine particles or the organic fine particles are preferably blended in an amount of 1 to 70 parts by weight of the inorganic fine particles or the organic fine particles with respect to 30 to 99 parts by weight of the heat-resistant resin so that the total amount of both is 100 parts by weight. When the amount of the inorganic fine particles or the organic fine particles is less than 1 part by weight, the thixotropic property becomes insufficient and the resolution tends to be hardly obtained. If it exceeds 70 parts by weight, applicability and workability tend to decrease.

As the inorganic fine particles, for example, silica, alumina, titania, tantalum oxide, zirconia, silicon nitride, barium titanate, barium carbonate, lead titanate, lead zirconate titanate, lanthanum lead zirconate titanate,
Insulating inorganic fine particles such as gallium oxide, spinel, mullite, cordierite, talc, aluminum titanate, yttria-containing zirconia, barium sulfate, and barium silicate.

The heat-resistant resin which is the main component of the heat-resistant resin paste is soluble in an organic solvent, whereas the organic fine particles are insoluble in the organic solvent before heating and drying. Is done. As the organic fine particles, heat-resistant resin fine particles having an amide bond, an imide bond, an ester bond or an ether bond are preferable. As the heat-resistant resin, from the viewpoint of heat resistance and mechanical properties, polyimide resin or a precursor thereof, polyamideimide resin or a precursor thereof, or fine particles of a polyamide resin are preferably used.

The inorganic fine particles and the organic fine particles are used singly or in combination of two or more as required. Further, inorganic fine particles and organic fine particles may be used as a mixture.

As the inorganic fine particles and the organic fine particles, those having an average particle diameter of 40 μm or less are preferably used.
The above-mentioned amide bond, imide bond, ester bond or ether bond having an average particle diameter of 20 μm or less from the viewpoint that damage to the wafer when applying a heat-resistant resin paste having thixotropic properties is small and the ionic impurity concentration can be reduced. Fine particles of a heat-resistant resin having the following are more preferably used. These average particle diameters are preferably 0.1 to
Those having a size of 10 μm are used.

The paste containing inorganic fine particles has a drawback that the nozzle tip is liable to be worn by the inorganic fine particles when repeatedly applied and the nozzle life is shortened. Therefore, organic fine particles are used as the thixotropic agent. preferable.

The heat-resistant resin paste contains (I) a heat-resistant resin A, (II) a heat-resistant resin B, and (III) a solvent,
Before heat drying, (II) heat resistant resin B exists as a heterogeneous phase with respect to the homogeneous phase comprising (I) heat resistant resin A and (III) solvent, and after heat drying, (I) heat resistant resin Resin A,
A heat-resistant resin paste in which (II) the heat-resistant resin B and (III) the solvent are present as a homogeneous phase is preferably used. This paste forms a uniform film after heating and drying,
Since no filler fine particles are present in the film, the film has excellent mechanical strength and dielectric strength, and is useful for electronic components such as semiconductors and wiring boards. Here, the heat drying means drying at the time of forming a film on a wafer, and the drying temperature is 50 to 350 ° C.
Is preferred.

In order to form a uniform phase containing (I) heat-resistant resin A and (II) heat-resistant resin B as essential components after drying by heating, (I) heat-resistant resin A,
(II) Those having the property of being compatible with the heat-resistant resin B are preferably used. Specifically, a combination of (I) preferably having a solubility parameter difference of 2.0 or less, more preferably 1.5 or less, is used. . Where the solubility parameter is Po
Fed described in lym.Eng.Sci., Vol. 14, pp. 147-154.
Value calculated according to the method of ors [unit: (MJ / m ³ ) ^1/2 ]
It is. Such a heat-resistant resin paste is disclosed in, for example, JP-A-2-289646, JP-A-4-248871.
And Japanese Patent Application Laid-Open No. 4-85379 can be used. Any of the above homogeneous phases may contain an organic solvent remaining after drying by heating.

Next, the discharge speed of the organic or inorganic viscous material from the nozzle, which is preferably used as a method for applying the organic or inorganic viscous material in the present invention, is determined by the pressure of the gas applied to the organic or inorganic viscous material. An apparatus for applying in a non-contact manner while adjusting by changing the value will be described in detail with reference to the drawings.

FIG. 1 is a schematic view showing an example of a coating apparatus preferably used in the present invention. FIG. 2 is a pressure valve control chart in the coating apparatus. The substrate 1 is a wafer and is fixed on a θ-axis rotating table 2. The θ-axis rotating table 2 is disposed on the X-axis moving device 3 and the Y-axis moving device 4, and the θ-axis rotating table 2, the X-axis moving device 3,
The axis moving device 4 is computer-controlled. The XY-θ coordinates of the position to be applied can be arbitrarily determined by programming in advance. When a plurality of patterns are formed on one substrate, the shape of each pattern is programmed in advance as coordinate data.
The dimensions, shapes, and film thicknesses of the plurality of patterns can be set arbitrarily. In addition, recording of a number of pattern groups is performed using an auxiliary storage device such as a floppy disk, for example.
If created in advance, it is possible to easily change varieties. This moving device (the θ-axis rotating table 2, the X-axis moving device 3,
The ejection position can be moved at high speed and with high accuracy by giving the axis moving device 4) an accuracy of, for example, 1 micron and a moving speed of, for example, 20 mm / sec.

At least one dispenser nozzle 5 is disposed on the substrate 1 and connected via a pipe to at least one cylindrical container 6 filled with a viscous material. The nozzle 5 and the cylindrical container 6 are connected to a Z-axis elevator 7. Fix it. The accuracy of the Z-axis elevator 7 is, for example, 1 micron,
By providing a movement speed of, for example, 100 mm / sec or more, the ejection height can be moved with high speed and high accuracy. Depending on the application, a coating device that moves one or both of the nozzle or the wafer that discharges the viscous material in parallel or in rotation can be used.

Three pressure control valves for connecting the cylindrical container 6 to a pressurizing source, a vacuum source, and an air opening port through pipes, that is, a pressurizing source connection control valve 8, a vacuum source connection control valve 9, and an air opening control. By connecting to the valve 10 and performing high-speed pressure control on these valves as shown in FIG. 2, the pressure at the start and end of the discharge of the viscous material is adjusted, and the timing of the liquid running out is adjusted at the same time as the lifting operation. Good coating can be performed. The pressurizing source connection control valve 8 is connected to a pressurizing source (compressor,
The vacuum source connection control valve 9 is connected to a pressure reducing source (vacuum pump or the like) via a pipe, and the air release control valve 10 is opened to the atmosphere via a pipe or not. Has become. Preferably, three pressure control valves are independently provided in each container, and the discharge timing can be changed for each nozzle opening, so that various patterns can be formed.

After the viscous material has been put into the cylindrical container 6, it is preferably defoamed under reduced pressure. The control of the three pressure control valves is performed, for example, as follows. That is, at first,
The three pressure control valves are closed, the pressure source connection control valve 8 is opened to apply pressure to the viscous material, and the table is moved while discharging the material at a constant rate to form a coating film. The applied pressure usually reaches a predetermined pressure instantaneously. When the application is stopped, stopped, or interrupted, the pressure source connection control valve 8 is closed, the vacuum source connection control valve 9 is opened for a short time and then closed, and at the same time, the air release control valve 10 is opened. When the atmospheric pressure is reached, the atmosphere release control valve 10 is closed. This operation is so-called suckback. The suckback time is very short, for example, about 10 milliseconds.

FIGS. 3A and 3B show an example of a single control single nozzle, wherein FIG. 3A is a front view and FIG. 3B is a bottom view. This device can draw one thick line with a slit-shaped nozzle like a flat brush. The size of the nozzle outlet is 0.0 depth
The thickness is preferably 1 to 1 mm and the width is 0.1 to 50 mm. If the depth or width is too small, the applied pressure at the time of ejection becomes too large,
Further, the coating speed becomes slow. If the depth is too large, dripping of the viscous material tends to occur, and the liquid tends to run out poorly. If the width is too large, the ejection speed of the viscous material tends to be difficult to be uniform over the entire width.

FIGS. 4A and 4B show an example of a single control multipoint nozzle, wherein FIG. 4A is a front view and FIG. 4B is a bottom view. This device can simultaneously draw a plurality of patterns with a comb-shaped nozzle. The diameter of the nozzle hole is preferably 0.01 to 1 mm. If the diameter of the hole is too small, the applied pressure at the time of discharge becomes too large, and the coating speed tends to be slow. Also, if the diameter of the hole is too large, sagging of the viscous material is likely to occur, and the liquid tends to run out poorly. The distance between the holes is appropriately determined according to the purpose. The tip of the comb-shaped nozzle may have any shape depending on the purpose. When a line pattern is applied, each of the nozzle holes has an independent protruding tip, and its outer diameter is preferably three times or less the inner diameter. Suitable for applying multiple patterns at once.

FIG. 5 shows another example of the single control multi-point nozzle, in which three thick brushes can be used to draw three thick lines by one coating operation. In order to reduce the number of coating films to three instead of one, it is preferable that the interval between the nozzle holes is 0.01 mm or more.

FIGS. 6A and 6B show an example of a multipoint control multipoint nozzle, wherein FIG. 6A is a front view and FIG. 6B is a bottom view. In this apparatus, for example, a three-point nozzle shown in FIG. 5 is of a type that can individually control the pressure, and can efficiently apply a round wafer. The size of each nozzle is similar to that of the single control single nozzle of FIG.

FIGS. 7A and 7B show another example of the multi-point control multi-point nozzle. FIG. 7A is a front view, FIG. 7B is a bottom view, and FIG. 7C is a right side view. This apparatus is, for example, of a type in which the multi-point nozzles in FIG. 3 can be individually pressure-controlled. Since the discharge amount from each nozzle can be individually controlled, a complicated pattern can be drawn. The nozzle has a quadrangular shape, and it is preferable that the length of each piece is 0.01 to 1 mm. If the holes are too small, the applied pressure during discharge tends to be too high, and the coating speed tends to be slow. Also, if the pores are too large, the viscous material tends to sag and the liquid tends to run out.
The distance between the holes is appropriately determined according to the purpose. A very small spacing between the individual holes will have the same function as the single control single nozzle described above, and a large enough will allow one operation to apply the number of lines of nozzles at one time.

FIGS. 8A and 8B show another example of the multipoint control multipoint nozzle, wherein FIG. 8A is a front view and FIG. 8B is a bottom view. This device is, for example, one in which the width of the three-point nozzle in FIG. 6 is changed.
By adjusting the gap between the nozzles and the viscosity of the liquid, a plurality of patterns formed on a round wafer can be efficiently applied by one application operation.

As described above, various patterns can be drawn by mounting various nozzles. By using a plurality of dispense nozzles, higher-speed processing is possible. Since the applied film thickness is determined by the gap between the nozzle and the base material and the traveling speed, the provision of a distance sensor for measuring the gap in the nozzle portion enables application to a wafer having irregularities. In addition, if a positioning sensing function is added, positioning can be more easily performed. In addition, by adding a heating function to the tip of the nozzle, a varnish or paste having higher viscosity can be applied at a high speed. The above device is only an example and does not limit the invention.

In the present invention, when a continuous line pattern such as a lattice is applied to the back surface of the wafer, it is preferable to apply the continuous line pattern in one stroke. This method can reduce the time required for coating and improve the production efficiency (tact).

The reinforcing wafer having an organic or inorganic viscous material applied to the back surface of the thin wafer corresponding to the pattern formed on the front surface of the thin wafer in the present invention is a stacked C
It can be widely used as electronic components such as SP, semiconductor chips for three-dimensional mounting, and mesa-type power devices (eg, diodes, transistors, thyristors, etc.), and is extremely useful industrially.

[0067]

The present invention will be described below with reference to examples. Note that the solubility parameter value is abbreviated as Sp value.

Example 1 (1) Synthesis of Polyamic Acid Resin (Polyamic Acid-A) Solution In a 2000 ml four-necked flask equipped with a stirrer, a thermometer, a nitrogen gas inlet tube and a cooling tube with an oil / water separator, 4,
175.68 g (0.545 mol) of 3 ', 4'-benzophenonetetracarboxylic dianhydride, 54.58 g (0.273 mol) of 4,4'-diaminodiphenyl ether, 2,2-bis [4- (4 -Aminophenoxy) phenyl] propane 89.53 g (0.218 mol),
13.55 g (0.0545 mol) of 1,3-bis (aminopropyl) tetramethyldisiloxane, 544.43 g of γ-butyrolactone (hereinafter abbreviated as BL) and 1,3
-Dimethyl-3,4,5,6-tetrahydro-2 (1
H) -Pyrimidinone (hereinafter abbreviated as DMTP) 233.
34 g were charged while passing dry nitrogen gas. After stirring, the temperature was raised to 80 ° C., and the reaction was conducted at the same temperature for 2 hours.
After cooling to room temperature, a solution of a polyamic acid resin (polyamic acid-A) having a number average molecular weight of 75,000 (in terms of polystyrene) was obtained. The Sp value of this polyamic acid-A was 28.1.
It is.

(2) Polyamic acid resin (polyamic acid-
Synthesis of B) 3, 4, 4 in a 2000 ml four-necked flask equipped with a stirrer, a thermometer, a nitrogen gas inlet tube and a cooling tube with an oil / water separator.
202.70 g (0.629 mol) of 3 ', 4'-benzophenonetetracarboxylic dianhydride, 13.61 g (0.126 mol) of p-phenylenediamine, 75.58 g of 4,4'-diaminodiphenyl ether (0.5%). 377 mol), 25.82 g (0.0629 mol) of 2,2-bis [4- (4-aminophenoxy) phenyl] propane,
15.63 g (0.0629 mol) of 1,3-bis (aminopropyl) tetramethyldisiloxane, BL54
4.45 g and 233.23 g of DMTP were charged while passing dry nitrogen gas. The temperature was raised to 80 ° C. under stirring, and the reaction was allowed to proceed at the same temperature for about 2 hours. When the reaction solution became slightly turbid, it was cooled to room temperature. This solution is
After standing for a while, the number average molecular weight is 60,000 (polystyrene equivalent), and the agar-like polyamic acid resin (polyamic acid-
B) was obtained. The Sp value of this polyamic acid-B was 29.2.
It is.

(3) Production of Polyamic Acid Resin Paste equipped with a stirrer, thermometer, nitrogen gas inlet tube and cooling tube
The agar-like polyamic acid resin (polyamic acid-B) 294.12 obtained in the above (2) is placed in a 000 ml four-necked flask.
g, while passing dry nitrogen gas, under stirring,
The temperature was raised to 80 ° C. to dissolve. Next, at the same temperature, 686.28 g of the solution of the polyamic acid resin (polyamic acid-A) obtained in the above (1) was charged and mixed with stirring to obtain a uniform solution. After cooling to 23 ° C in about 1 hour,
When left at ℃ for 1 month, it became a paste.

This was diluted with a small amount of DMTP and adjusted to have a viscosity of 330 Pa · s and a thixotropy coefficient (hereinafter referred to as T
A polyamic acid paste of 5.7 was obtained. The obtained polyamic acid paste is placed on a glass plate (about 2 m thick).
m) was coated with a bar coater so that the thickness after heating and drying was 20 μm, and was applied at 100 ° C. for 30 minutes and at 150 ° C. for 30 minutes.
The substrate was heated at 200 ° C. for 15 minutes, at 250 ° C. for 15 minutes, and at 350 ° C. for 60 minutes to obtain a glass plate with a polyimide film. The cured film was almost uniformly transparent. About the film which peeled the polyimide resin film from the glass plate,
Seiko Denshi Kogyo Co., Ltd. thermophysical testing machine TMA120
The glass transition temperature (hereinafter, abbreviated as Tg) was measured at 280 ° C. using a mold at a sample size of 3 mm × 20 mm, a load of 8 g, and a temperature rising rate of 5 ° C./min.

The above polyamic acid resin paste was applied to a thickness of 1
A 200 μm-wide grid for obtaining a 10 mm × 14 mm chip on the back of a 00 μm 8-inch silicon wafer by a precision coating apparatus as shown in FIG. 1 using a slit-type single control single nozzle as a nozzle. It was applied in a non-contact manner over the entire surface except for the scribe line. The dimensions of the slit type hole of the single control single nozzle are 0.4 mm × 10 mm. The coating was performed at a coating speed of 25 mm / s, a distance between the nozzle and the wafer of 70 μm, and an applied pressure of gas (air) of 85 Pa (gauge pressure). The suck-back time when the coating was stopped or interrupted was 10 milliseconds. As a result of observing the pattern to which the paste was applied with an optical microscope, stringing and dripping were not observed.

Further, the wafer on which the paste was applied
00 ° C for 30 minutes, 150 ° C for 30 minutes, 200 ° C for 1 minute
Heat treatment was performed for 5 minutes, at 250 ° C. for 15 minutes, and further at 350 ° C. for 60 minutes to obtain a silicon wafer with a cured polyimide resin film in which the entire surface other than the grid scribe lines was covered with the cured polyimide resin film. The film thickness of this cured polyimide resin film was 18 ± 2 μm, and the width of the scribe line that had escaped in a lattice shape was 180 μm. The silicon wafer with the polyimide resin cured film was adsorbed on an adsorption stage, and the scribe line was cut in full cut with a dicing blade. No cracking or chipping of the chip occurred.

Example 2 The polyamic acid resin paste described in Example 1 was
A 430 μm width and a 130 μm depth (a thickness of 70 μm from the bottom of the groove to the back surface of the wafer)
m) A single-control single-hole nozzle as a nozzle by a precision coating device as shown in FIG. 1 on the back surface of a 5-inch silicon wafer on which a lattice-like groove having a pitch of 1500 μm is formed in both the X-axis direction and the Y-axis direction. Was used to apply a lattice pattern corresponding to the groove pattern formed on the wafer surface.
The inside diameter of the hole of the single control single hole nozzle is 0.3 mm and the outside diameter is 0.4 mm. The application condition is that the application speed is 100
mm / s, the distance between the nozzle and the wafer was 70 μm, and the applied pressure of gas (air) was 0.35 MPa (gauge pressure).
The paste discharged from the nozzle has a columnar shape, and the ratio of the diameter (D1) to the inner diameter (D2) of the hole-shaped nozzle [(D1) /
(D2)] was about 2.0. As a result of observing the pattern to which the paste was applied with an optical microscope, stringing and dripping were not observed.

Further, the wafer on which the paste was applied was
00 ° C for 30 minutes, 150 ° C for 30 minutes, 200 ° C for 1 minute
Heat treatment for 5 minutes, 250 ° C. for 15 minutes, and further at 350 ° C. for 60 minutes to form a silicon wafer having a cured polyimide resin lattice pattern formed at the same position on the back surface of the wafer corresponding to the groove pattern on the wafer surface. Obtained. The thickness of the polyimide resin was 21 ± 2 μm, and the line width of the lattice pattern of the polyimide resin was 610 μm. The silicon wafer on which the cured polyimide resin lattice pattern was formed was adsorbed on the adsorption stage, and the scribe line was cut full-cut with a dicing blade. No cracking or chipping of the chip occurred.

Comparative Example 1 An 8-inch silicon wafer having a thickness of 100 μm as described in Example 1 was attached to a dicing tape having a tape thickness of 90 μm and an adhesive force of 2.0 N / 10 mm, and was adsorbed on an adsorption stage. The line was full-cut with a dicing blade. Although no chips were broken or chipped at the time of cutting, many chips were broken or chipped when the cut chips were picked up from a dicing tape with a pin holder.

Comparative Example 2 A 430 μm wide and 130 μm deep (70 μm thick from the bottom of the groove to the back surface of the wafer) a 200 μm thick silicon wafer described in Example 2 and a pitch in both the X-axis direction and the Y-axis direction A 5-inch silicon wafer on which a 1500-μm lattice-like groove was formed was placed on a 90-μm-thick tape having an adhesive strength of 2.0
The scribe line was attached to an N / 10 mm dicing tape, adsorbed on an adsorption stage, and the scribe line was cut full-cut with a dicing blade. Although no chips were broken or chipped at the time of cutting, many chips were broken or chipped when the cut chips were picked up from a dicing tape with a pin holder.

[0078]

According to the method for manufacturing a reinforced wafer according to the first aspect of the invention, a thin wafer having excellent workability and excellent product yield can be obtained without wafer breakage in the wafer manufacturing, chip manufacturing or transporting steps. The method for manufacturing a reinforcing wafer according to the second aspect has the effect of the method for manufacturing a reinforcing wafer according to the first aspect, and a thin wafer suitable for an electronic component using a grooved wafer can be obtained. The method for manufacturing a reinforced wafer according to the third aspect has the effects of the method for manufacturing a reinforced wafer according to the first aspect, further facilitates cutting of the scribe line, and obtains a thin wafer having higher productivity.

A method for manufacturing a reinforcing wafer according to claim 4 is characterized in that:
The effect of the method for producing a reinforced wafer according to claim 1, 2 or 3 is exhibited, and further, the coating efficiency is high, the continuous coating property is excellent, the bleed is suppressed by a simple process and non-contact coating, and bubbles and contamination are suppressed. A reduced thickness allows a thin wafer to be obtained at low cost. The method for manufacturing a reinforcing wafer according to the fifth aspect has the effects of the method for manufacturing a reinforcing wafer according to the first, second, third, or fourth aspect, and a thin wafer having higher productivity (tact) can be obtained. The method for producing a reinforced wafer according to claim 6 has the effects of the method for producing a reinforced wafer according to claim 1, 2, 3, 4, or 5, and further has excellent coating properties, resolution, and thick film forming properties. A thin wafer is obtained.

The method for manufacturing a reinforcing wafer according to claim 7 is characterized in that:
The effect of the method for manufacturing a reinforced wafer according to the first, second, third, fourth, fifth or sixth aspect is exhibited, and a thin wafer having more excellent applicability can be obtained. The method for manufacturing a reinforced wafer according to claim 8 has the same effect as the method for manufacturing a reinforced wafer according to claim 1, 2, 3, 4, 5, 6, or 7, and has higher resolution, thick film forming property, and the like. An excellent thin wafer can be obtained.

The method for manufacturing a reinforced wafer according to claim 9 is as follows:
The effect of the method for manufacturing a reinforced wafer according to the first, second, third, fourth, fifth, sixth, seventh or eighth aspect is obtained, and a thin wafer having excellent heat resistance can be obtained. The method for producing a reinforced wafer according to the tenth aspect has the effects of the method for producing a reinforced wafer according to the ninth aspect, and a thin wafer having excellent mechanical properties, dielectric strength and the like can be obtained. The electronic component according to claim 11 is a highly reliable, high-productivity (tact), high-yield electronic component, and in particular, a mesa-type power device in which a lattice-shaped or independent-shaped groove is formed. For example, a diode,
Transistors, thyristors, etc.) at the wafer level.

[Brief description of the drawings]

FIG. 1 is a schematic view showing an example of a coating apparatus used in the present invention.

FIG. 2 is a pressure valve control chart in the coating apparatus of FIG.

FIG. 3 is an example of a single control single nozzle.

FIG. 4 is an example of a single control multi-point nozzle.

FIG. 5 is another example of a single control multi-point nozzle.

FIG. 6 is an example of a multipoint control multipoint nozzle.

FIG. 7 is another example of a multi-point control multi-point nozzle.

FIG. 8 is another example of the multipoint control multipoint nozzle.

[Explanation of symbols]

 Reference Signs List 1 substrate 2 θ-axis rotary table 3 X-axis moving device 4 Y-axis moving device 5 Dispenser nozzle 6 Cylindrical container 7 Z-axis elevator 8 Pressurized source connection control valve 9 Vacuum source connection control valve 10 Atmospheric release control valve

Continuation of the front page (72) Inventor Akira Kageyama F-term (reference) 4D075 AC08 AC96 CA03 CA18 DA06 DA31 DB11 DC22 EA14 EC33 4J002 CM04W CM04X FD206 GQ05 4J043 PA02 PA04 PA19 QB31 RA34 SA06 SB01 SB02 TA13 TA14 TA22 TB01 UA131 UA132 UB021 UB121 UB152 XA03 XA13 XA16 XA19 ZB50

Claims (11)

[Claims] 1. A method for manufacturing a reinforced wafer, comprising applying an organic or inorganic viscous material to a back surface of a wafer corresponding to a pattern formed on a front surface of a thin wafer. 2. The reinforcing wafer according to claim 1, wherein the pattern formed on the surface of the thin wafer is a groove, and an organic or inorganic viscous material is applied to the back surface of the thinner groove bottom. Manufacturing method. 3. A pattern formed on a thin wafer surface is a scribe line, and an organic or inorganic viscous material is applied to a portion other than the scribe line.
A method for manufacturing the reinforced wafer according to the above. 4. A method for applying an organic or inorganic viscous material, wherein a discharge speed of the organic or inorganic viscous material from a nozzle is adjusted by changing a pressure of a gas applied to the organic or inorganic viscous material. The method for producing a reinforcing wafer according to claim 1, 2 or 3, wherein the application is performed in a non-contact manner. 5. The method according to claim 1, wherein an organic or inorganic viscous material is continuously applied in one stroke. 6. The nozzle is a hole-shaped nozzle, and the ratio [(D1) of the diameter (D1) of the columnar organic or inorganic viscous material discharged from the nozzle to the inner diameter (D2) of the hole-shaped nozzle is obtained.
/ (D2)] is 4 or less, the method for producing a reinforced wafer according to claim 1, 2, 3, 4, or 5. 7. The organic or inorganic viscous material has a viscosity of 1 to 7.
7. The method for producing a reinforced wafer according to claim 1, wherein the pressure is 1000 Pa.s. 8. The method according to claim 1, wherein the organic or inorganic viscous material exhibits thixotropic properties.
8. The method for producing a reinforced wafer according to 6 or 7. 9. The organic viscous material contains a heat-resistant resin having an amide bond, an imide bond, an ester bond or an ether bond.
9. The method for producing a reinforced wafer according to 6, 7, or 8. 10. The organic viscous material contains (I) a heat-resistant resin A, (II) a heat-resistant resin B, and a (III) solvent. ) Heat resistant resin A
And (III) exists as a heterogeneous phase with respect to a homogeneous phase composed of a solvent, and after heating and drying, (I) heat-resistant resin A, (II)
The method for producing a reinforced wafer according to claim 9, wherein the heat-resistant resin B and the solvent (III) are a paste of a heat-resistant resin in which the solvent is present as a uniform phase. 11. An organic or inorganic viscous material is applied to the back surface of a wafer corresponding to the pattern formed on the surface of a thin wafer by the method of manufacturing a reinforcing wafer according to any one of claims 1 to 10. Electronic parts.