JP2001226469A - New polymer, luminescent element material and luminescent element using the same - Google Patents
New polymer, luminescent element material and luminescent element using the sameInfo
- Publication number
- JP2001226469A JP2001226469A JP2000370319A JP2000370319A JP2001226469A JP 2001226469 A JP2001226469 A JP 2001226469A JP 2000370319 A JP2000370319 A JP 2000370319A JP 2000370319 A JP2000370319 A JP 2000370319A JP 2001226469 A JP2001226469 A JP 2001226469A
- Authority
- JP
- Japan
- Prior art keywords
- light
- polymer
- layer
- emitting element
- substituted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- 239000004743 Polypropylene Substances 0.000 description 1
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- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000006069 Suzuki reaction reaction Methods 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 238000007239 Wittig reaction Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- CWRYPZZKDGJXCA-UHFFFAOYSA-N acenaphthene Chemical compound C1=CC(CC2)=C3C2=CC=CC3=C1 CWRYPZZKDGJXCA-UHFFFAOYSA-N 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 125000004390 alkyl sulfonyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229920005603 alternating copolymer Polymers 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000008425 anthrones Chemical class 0.000 description 1
- 229940058303 antinematodal benzimidazole derivative Drugs 0.000 description 1
- 125000005161 aryl oxy carbonyl group Chemical group 0.000 description 1
- 125000004391 aryl sulfonyl group Chemical group 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 125000004104 aryloxy group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- IZALUMVGBVKPJD-UHFFFAOYSA-N benzene-1,3-dicarbaldehyde Chemical compound O=CC1=CC=CC(C=O)=C1 IZALUMVGBVKPJD-UHFFFAOYSA-N 0.000 description 1
- 125000003785 benzimidazolyl group Chemical class N1=C(NC2=C1C=CC=C2)* 0.000 description 1
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical class C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000001716 carbazoles Chemical class 0.000 description 1
- 150000001718 carbodiimides Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229940125833 compound 23 Drugs 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- TXCDCPKCNAJMEE-UHFFFAOYSA-N dibenzofuran Chemical compound C1=CC=C2C3=CC=CC=C3OC2=C1 TXCDCPKCNAJMEE-UHFFFAOYSA-N 0.000 description 1
- QDGONURINHVBEW-UHFFFAOYSA-N dichlorodifluoroethylene Chemical group FC(F)=C(Cl)Cl QDGONURINHVBEW-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229920000578 graft copolymer Polymers 0.000 description 1
- 125000005549 heteroarylene group Chemical group 0.000 description 1
- 229940083761 high-ceiling diuretics pyrazolone derivative Drugs 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 229920006270 hydrocarbon resin Polymers 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- ZLTPDFXIESTBQG-UHFFFAOYSA-N isothiazole Chemical compound C=1C=NSC=1 ZLTPDFXIESTBQG-UHFFFAOYSA-N 0.000 description 1
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- FGGAOQTXQHKQOW-UHFFFAOYSA-N n,n-diphenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=CC=C1 FGGAOQTXQHKQOW-UHFFFAOYSA-N 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical class C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- AODWRBPUCXIRKB-UHFFFAOYSA-N naphthalene perylene Chemical class C1=CC=CC2=CC=CC=C21.C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 AODWRBPUCXIRKB-UHFFFAOYSA-N 0.000 description 1
- 125000004957 naphthylene group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 description 1
- AICOOMRHRUFYCM-ZRRPKQBOSA-N oxazine, 1 Chemical compound C([C@@H]1[C@H](C(C[C@]2(C)[C@@H]([C@H](C)N(C)C)[C@H](O)C[C@]21C)=O)CC1=CC2)C[C@H]1[C@@]1(C)[C@H]2N=C(C(C)C)OC1 AICOOMRHRUFYCM-ZRRPKQBOSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical class C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 150000004986 phenylenediamines Chemical class 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 230000036314 physical performance Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920006112 polar polymer Polymers 0.000 description 1
- 229920001490 poly(butyl methacrylate) polymer Polymers 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 1
- 238000012673 precipitation polymerization Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- PMWXGSWIOOVHEQ-UHFFFAOYSA-N pyridine-2,6-dicarbaldehyde Chemical compound O=CC1=CC=CC(C=O)=N1 PMWXGSWIOOVHEQ-UHFFFAOYSA-N 0.000 description 1
- 150000005255 pyrrolopyridines Chemical class 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- 125000006836 terphenylene group Chemical group 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- NZFNXWQNBYZDAQ-UHFFFAOYSA-N thioridazine hydrochloride Chemical class Cl.C12=CC(SC)=CC=C2SC2=CC=CC=C2N1CCC1CCCCN1C NZFNXWQNBYZDAQ-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Abstract
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【0001】[0001]
【発明の属する技術分野】本発明は、高い電子親和力を
有するポリマーおよび電気エネルギーを光に変換して発
光できる発光素子用材料および発光素子に関し、表示素
子、ディスプレイ、バックライト、電子写真、照明光
源、記録光源、読み取り光源、標識、看板、インテリア
等の分野に好適に使用できる発光素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polymer having a high electron affinity, a material for a light emitting device capable of converting electric energy into light and emitting light, and a display device, a display, a backlight, an electrophotograph, and an illumination light source. The present invention relates to a light emitting element which can be suitably used in fields such as a recording light source, a reading light source, a sign, a signboard, and an interior.
【0002】[0002]
【従来の技術】今日、種々の表示素子に関する研究開発
が活発であり、中でも有機発光素子は、低電圧で高輝度
の発光を得ることができるため、有望な表示素子として
注目されている。例えば、有機化合物の蒸着により有機
薄膜を形成する発光素子が知られている(アプライド
フィジックス レターズ、51巻、913頁、1987
年)。しかしながら、有機化合物の蒸着操作を伴う発光
素子作製は、生産性に問題があり、製造工程の簡略化、
加工性、大面積化の観点から、塗布方式の素子作製が望
ましい。2. Description of the Related Art At present, research and development on various display elements are active. Among them, organic light-emitting elements have attracted attention as promising display elements because they can obtain high-luminance light emission at a low voltage. For example, a light emitting device that forms an organic thin film by vapor deposition of an organic compound is known (Applied
Physics Letters, 51, 913, 1987
Year). However, the production of a light-emitting element involving an organic compound vapor deposition operation has a problem in productivity, and simplification of the production process,
From the viewpoint of processability and a large area, it is desirable to manufacture a device by a coating method.
【0003】生産性に有利な塗布方式の発光素子作製で
使用される発光素子材料としては、例えばポリパラフェ
ニレンビニレン(PPV)に代表されるπ共役系ポリマ
ーが知られているが、色調、発光強度、耐久性等、実用
に供するには多くの問題があった。同じく、塗布方式を
用いる発光素子として、例えば、ポリ(N−ビニルカル
バゾール)中に低分子量蛍光性化合物を分散する素子
(特開平4−212286号等)がある。この方式では
蛍光性化合物種を任意に変更できるため、色調、発光強
度の調整が比較的容易であるが、駆動電圧が高く、また
長時間経時した後駆動した場合や連続駆動した場合に、
輝度の低下が起きやすいなど耐久性面でも問題があっ
た。[0003] As a light emitting device material used for producing a light emitting device of a coating method which is advantageous in productivity, for example, a π-conjugated polymer represented by polyparaphenylenevinylene (PPV) is known. There are many problems for practical use, such as strength and durability. Similarly, as a light-emitting element using a coating method, for example, there is an element in which a low-molecular-weight fluorescent compound is dispersed in poly (N-vinylcarbazole) (JP-A-4-212286). In this method, since the kind of the fluorescent compound can be arbitrarily changed, it is relatively easy to adjust the color tone and the emission intensity.However, when the driving voltage is high, and when driving after a long time lapse or when driving continuously,
There was also a problem in terms of durability, such as a tendency for luminance to drop.
【0004】これらの問題は一つには陰極からの電子注
入性、電子輸送性が乏しいことに原因があると考えられ
ており、種々の電子注入性、電子輸送性ポリマーの開発
が試みられているが、未だ満足な物性、性能を示してい
ない。例えば、電子輸送性(導電性)ポリマーで有名な
ポリアセチレン等は溶解性、製膜性に問題があり、塗布
プロセスによる素子作成に適していない。また、J.P
hys.:Condens.Matter10(199
8)5171−5178に報告されているようなポリ
(2,5−ピリジンジイル)や、Synthetic
Metals 85(1997)1179−1182に
報告されているようなポリ(p−ピリジルビニレン)等
のポリマーでは、電子輸送材料としてバンドギャップが
狭く青色発光素子、緑色発光素子に使用できない、電子
親和力(電子注入性)が足りない、導電性に乏しい、汎
用の有機溶媒に難溶性で蟻酸等の特殊な溶媒にしか溶け
ない等、従来の問題を解決するまでには至らなかった。It is believed that these problems are due in part to poor electron injecting and electron transporting properties from the cathode, and attempts have been made to develop various electron injecting and electron transporting polymers. However, it has not yet shown satisfactory physical properties and performance. For example, polyacetylene or the like, which is famous for an electron-transporting (conductive) polymer, has problems in solubility and film-forming properties, and is not suitable for element production by a coating process. Also, J.I. P
hys. : Condens. Matter 10 (199
8) Poly (2,5-pyridinediyl) as reported in 5171-5178, Synthetic
In a polymer such as poly (p-pyridylvinylene) as reported in Metals 85 (1997) 1179-1182, the electron transporting material has a narrow band gap and cannot be used for a blue light emitting element and a green light emitting element. The conventional problems such as insufficient injectability, poor conductivity, poor solubility in general-purpose organic solvents, and solubility only in special solvents such as formic acid, etc. were not reached.
【0005】[0005]
【発明が解決しようとする課題】本発明の目的は、良好
な電子輸送性を有し、塗布プロセスによる発光素子作成
に適し、低電圧駆動が可能かつ発光特性が良好であり、
広範な波長領域に適応が可能で、また繰り返し使用時で
の安定性に優れた発光素子用材料および発光素子の提供
にある。SUMMARY OF THE INVENTION An object of the present invention is to provide a light emitting device having a good electron transporting property, suitable for producing a light emitting device by a coating process, capable of being driven at a low voltage, and having good light emitting characteristics.
An object of the present invention is to provide a light-emitting element material and a light-emitting element which can be applied to a wide wavelength range and have excellent stability upon repeated use.
【0006】[0006]
【課題を解決するための手段】この課題は下記手段によ
って達成された。 [1]下記一般式(I)で表される構造を少なくとも一
つ有する重合体。This object has been achieved by the following means. [1] A polymer having at least one structure represented by the following general formula (I).
【0007】[0007]
【化3】 Embedded image
【0008】(式中、Arは共役不飽和基を表す。ただ
し、窒素原子を2個以上有する含窒素ヘテロ環は除く。
mおよびnはポリマー中のモル分率を表し、m+n=1
00である。nは0以上100未満の数値を表す。Rは
水素原子又は置換基を表す。ただし、Arが置換フルオ
レン環、アルコキシ置換ベンゼン環の場合はnが50の
値をとることはない。) [2]一般式(I)において、Arが窒素原子を2個以
上有する含窒素ヘテロ環、置換フルオレン環、およびア
ルコキシ置換ベンゼン環以外の共役不飽和基であること
を特徴とする上記[1]記載の新規重合体。 [3]下記一般式(I)で表される構造を少なくとも一
つ有する重合体であることを特徴とする発光素子材料。(In the formula, Ar represents a conjugated unsaturated group, provided that a nitrogen-containing heterocyclic ring having two or more nitrogen atoms is excluded.
m and n represent the mole fraction in the polymer, and m + n = 1
00. n represents a numerical value of 0 or more and less than 100. R represents a hydrogen atom or a substituent. However, when Ar is a substituted fluorene ring or an alkoxy-substituted benzene ring, n does not take a value of 50. [2] In the general formula (I), Ar is a conjugated unsaturated group other than a nitrogen-containing heterocyclic ring having two or more nitrogen atoms, a substituted fluorene ring, and an alkoxy-substituted benzene ring. ] The novel polymer as described above. [3] A light emitting device material comprising a polymer having at least one structure represented by the following general formula (I).
【0009】[0009]
【化4】 Embedded image
【0010】(式中、Arは共役不飽和基を表す。ただ
し、窒素原子を2個以上有する含窒素ヘテロ環は除く。
mおよびnはポリマー中のモル分率を表し、m+n=1
00である。nは0以上100未満の数値を表す。Rは
水素原子又は置換基を表す。ただし、Arが置換フルオ
レン環、アルコキシ置換ベンゼン環の場合はnが50の
値をとることはない。) [4]一般式(I)において、Arが窒素原子を2個以
上有する含窒素ヘテロ環、置換フルオレン環、およびア
ルコキシ置換ベンゼン環以外の共役不飽和基であること
を特徴とする上記[3]記載の発光素子材料。 [5]一対の電極間に発光層もしくは発光層を含む複数
の有機化合物薄層を形成した発光素子において、少なく
とも一層が上記[3]記載の重合体を少なくとも一つ含
有することを特徴とする発光素子。 [6]一対の電極間に発光層もしくは発光層を含む複数
の有機化合物薄層を形成した発光素子において、少なく
とも一層が上記[3]記載の重合体を少なくとも一つ塗
布することにより成膜した層であることを特徴とする発
光素子。 [7]一対の電極間に発光層もしくは発光層を含む複数
の有機化合物薄層を形成した発光素子において、少なく
とも一層が上記[4]記載の重合体を少なくとも一つ含
有することを特徴とする発光素子。 [8]一対の電極間に発光層もしくは発光層を含む複数
の有機化合物薄層を形成した発光素子において、少なく
とも一層が上記[4]記載の重合体を少なくとも一つ塗
布することにより成膜した層であることを特徴とする発
光素子。(In the formula, Ar represents a conjugated unsaturated group, provided that a nitrogen-containing heterocyclic ring having two or more nitrogen atoms is excluded.
m and n represent the mole fraction in the polymer, and m + n = 1
00. n represents a numerical value of 0 or more and less than 100. R represents a hydrogen atom or a substituent. However, when Ar is a substituted fluorene ring or an alkoxy-substituted benzene ring, n does not take a value of 50. [4] In the general formula (I), Ar is a conjugated unsaturated group other than a nitrogen-containing heterocycle having two or more nitrogen atoms, a substituted fluorene ring, and an alkoxy-substituted benzene ring. ] The light emitting device material according to the above. [5] A light-emitting element having a light-emitting layer or a plurality of organic compound thin layers including the light-emitting layer formed between a pair of electrodes, wherein at least one layer contains at least one polymer according to the above [3]. Light emitting element. [6] In a light-emitting element in which a light-emitting layer or a plurality of organic compound thin layers including a light-emitting layer is formed between a pair of electrodes, at least one film is formed by applying at least one polymer described in the above [3]. A light-emitting element, which is a layer. [7] A light-emitting element having a light-emitting layer or a plurality of organic compound thin layers including a light-emitting layer formed between a pair of electrodes, wherein at least one layer contains at least one polymer according to the above [4]. Light emitting element. [8] In a light-emitting element in which a light-emitting layer or a plurality of organic compound thin layers including a light-emitting layer are formed between a pair of electrodes, at least one layer is formed by applying at least one polymer described in the above [4]. A light-emitting element, which is a layer.
【0011】[0011]
【発明の実施の形態】以下、本発明について詳細に説明
する。本発明の重合体は、一般式(I)で表される構造
を少なくとも一つ含む化合物であり、好ましくは一般式
(I)で表される構造をポリマー主鎖および/または側
鎖に有したものである。一般式(I)で表される構造を
少なくとも有する重合体は高い電子親和力、水、有機溶
媒に対する良好な溶解性を有し、電子注入、電子輸送、
塗布プロセスによる発光素子作成に対して極めて有効で
ある。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. The polymer of the present invention is a compound containing at least one structure represented by the general formula (I), and preferably has the structure represented by the general formula (I) in a polymer main chain and / or a side chain. Things. The polymer having at least the structure represented by the general formula (I) has high electron affinity, good solubility in water and an organic solvent, and has good electron injection, electron transport,
This is extremely effective for producing a light emitting device by a coating process.
【0012】一般式(I)中、Arはその共役系に二重
結合、三重結合、および/または芳香環を有していても
よく、ポリマー化した際の各種の物性によって選択され
る。Arはまた2種類以上の骨格を有していてもよく、
ポリマー全体として多元共重合体であってもよい。Ar
としては、置換または無置換の総原子数20までのアリ
ーレン基、窒素原子を2個以上有することのない置換ま
たは無置換の総原子数20までのヘテロアリーレン基、
および3級アリールアミンが好ましく、この中で、フェ
ニレン、ビフェニレン、ターフェニレン、ナフチレン、
フルオレン、アセナフテン、フェナンスレン、アンスラ
セン、フルオランテン、ピレン、ペリレン、ルブレン、
クリセン、フラン、チオフェン、ピロール、オキサゾー
ル、イソオキサゾール、チアゾール、イソチアゾール、
イミダゾール、ピリジン、ベンズオキサゾール、ベンズ
チアゾール、キノリン、イソキノリン、フェナンスリジ
ン、アクリジン、カルバゾール、ジフェニレンオキシ
ド、トリフェニルアミン、N,N'−ジフェニルベンジ
ジン、N,N'−ジフェニル−1,4−フェニレンジア
ミン、ジフェニルナフチルアミン、テトラアリールシラ
ン、ジアリールジビニルシラン、ジアルキルジアリール
シラン、ジアルキルジビニルシランが更に好ましく、フ
ェニレン、ビフェニレン、フルオレン、アンスラセン、
ピロール、オキサゾール、ピリジン、キノリンが特に好
ましく、これらは一つ以上の置換基を有していてもよ
い。この置換基の例としては、炭素数20までのアルキ
ル基、炭素数20までのアリール基、炭素数20までの
アラルキル基、炭素数20までの(チオ)アルコキシ
基、炭素数20までの(チオ)アリールオキシ基、シア
ノ基、フルオロ基、クロロ基、炭素数20までのアルコ
キシカルボニル基、炭素数20までのアリールオキシカ
ルボニル基、ポリアルキレンオキシ基、アルキルスルホ
ニル基、アリールスルホニル基が好ましく、この中で、
アルキル基、アルコキシ基、ポリアルキレンオキシ基、
シアノ基が特に好ましく、アルキル基、アルコキシ基が
更に好ましい。Rの例としては、水素原子、炭素数20
までのアルキル基、炭素数20までのアリール基、炭素
数20までのアラルキル基、炭素数20までのポリアル
キレンオキシ基が好ましく、この中で、アルキル基、ポ
リアルキレンオキシ基がより好ましく、C1〜C6のアル
キル基(メチル、エチル、プロピル、n-ブチル、n-ヘ
キシル)が特に好ましい。In the general formula (I), Ar may have a double bond, a triple bond, and / or an aromatic ring in its conjugated system, and is selected depending on various physical properties when polymerized. Ar may also have two or more skeletons,
The entire polymer may be a multi-component copolymer. Ar
As a substituted or unsubstituted arylene group having up to 20 total atoms, a substituted or unsubstituted heteroarylene group having up to 20 total atoms having no more than 2 nitrogen atoms,
And tertiary arylamines are preferred, among which phenylene, biphenylene, terphenylene, naphthylene,
Fluorene, acenaphthene, phenanthrene, anthracene, fluoranthene, pyrene, perylene, rubrene,
Chrysene, furan, thiophene, pyrrole, oxazole, isoxazole, thiazole, isothiazole,
Imidazole, pyridine, benzoxazole, benzothiazole, quinoline, isoquinoline, phenanthridine, acridine, carbazole, diphenylene oxide, triphenylamine, N, N'-diphenylbenzidine, N, N'-diphenyl-1,4-phenylene Diamine, diphenylnaphthylamine, tetraarylsilane, diaryldivinylsilane, dialkyldiarylsilane, dialkyldivinylsilane are more preferred, phenylene, biphenylene, fluorene, anthracene,
Particularly preferred are pyrrole, oxazole, pyridine and quinoline, which may have one or more substituents. Examples of the substituent include an alkyl group having up to 20 carbon atoms, an aryl group having up to 20 carbon atoms, an aralkyl group having up to 20 carbon atoms, a (thio) alkoxy group having up to 20 carbon atoms, and a (thio) up to 20 carbon atoms. A) an aryloxy group, a cyano group, a fluoro group, a chloro group, an alkoxycarbonyl group having up to 20 carbon atoms, an aryloxycarbonyl group having up to 20 carbon atoms, a polyalkyleneoxy group, an alkylsulfonyl group, and an arylsulfonyl group; so,
Alkyl group, alkoxy group, polyalkyleneoxy group,
A cyano group is particularly preferred, and an alkyl group and an alkoxy group are more preferred. Examples of R include a hydrogen atom and carbon number 20.
Alkyl group of up to, aryl groups of up to 20 carbon atoms, an aralkyl group having up to 20 carbon atoms or a polyalkyleneoxy group of up to 20 carbon atoms is preferable, in this, an alkyl group, polyalkyleneoxy groups are more preferred, C 1 alkyl group -C 6 (methyl, ethyl, propyl, n- butyl, n- hexyl) is particularly preferred.
【0013】本発明の一般式(I)で表される構造を少
なくとも有する新規重合体は導電性重合体、電子輸送性
重合体、電子注入性重合体として有用である。The novel polymer having at least the structure represented by the general formula (I) of the present invention is useful as a conductive polymer, an electron transporting polymer, and an electron injecting polymer.
【0014】本発明の一般式(I)で表される構造を少
なくとも有する重合体は、ホモポリマーであっても良い
し、他のモノマーとの共重合体であっても良い。また、
ランダム共重合体であっても、交互共重合体であっても
よいし、ブロック共重合体であっても、グラフト共重合
体であってもよい。また、スターバースト型のホモポリ
マーあるいは共重合体であってもよい。また、前述の様
にArが2種類の骨格を有する多元共重合体であっても
よい。本発明における発光を司る物質は一般式(I)で
表される構造を少なくとも有する重合体でもよいし、そ
の他の発光性ポリマーや発光性低分子化合物でもよい。
また、本発明の重合体は化合物内に正孔輸送機能、電子
輸送機能または発光機能を有する骨格部分を含んでもよ
い。The polymer of the present invention having at least the structure represented by the general formula (I) may be a homopolymer or a copolymer with another monomer. Also,
The copolymer may be a random copolymer, an alternating copolymer, a block copolymer, or a graft copolymer. Further, a star burst type homopolymer or copolymer may be used. As described above, Ar may be a multi-component copolymer having two types of skeletons. The substance that controls light emission in the present invention may be a polymer having at least the structure represented by the general formula (I), or may be another light-emitting polymer or a light-emitting low-molecular compound.
Further, the polymer of the present invention may include a skeleton portion having a hole transporting function, an electron transporting function, or a light emitting function in the compound.
【0015】一般式(I)中、nは0〜70の数値が好
ましく、0〜50がより好ましく、0〜30の数値が特
に好ましい。Arが置換フルオレン環のみの場合、また
はアルコキシ置換ベンゼン環のみの場合はnが50付近
の値をとると、ポリマー物性に寄与するピリジン環の効
果をアルキル置換フルオレン環、アルコキシ置換ベンゼ
ン環部分が相殺し、ポリマーの電子構造、塗布適性、成
膜性、素子特性の点で好ましくないばかりではなく、低
極性化するため、ポリフルオレン等の発光材料の上に積
層塗布することができなくなる。In the general formula (I), n is preferably a numerical value of 0 to 70, more preferably 0 to 50, and particularly preferably a numerical value of 0 to 30. In the case where Ar is only a substituted fluorene ring or only an alkoxy-substituted benzene ring, when n takes a value near 50, the effect of the pyridine ring contributing to the polymer properties is offset by the alkyl-substituted fluorene ring and the alkoxy-substituted benzene ring portion. However, not only is it undesirable in terms of the polymer electronic structure, applicability, film formability, and device characteristics, but also because it has low polarity, it cannot be laminated and applied on a luminescent material such as polyfluorene.
【0016】一般式(I)で表される構造を少なくとも
有する重合体の平均分子量は置換基の種類により異なる
ので一律ではないが、好ましくは500から10000
00、より好ましくは700〜700000、更に好ま
しくは1000〜500000である。The average molecular weight of the polymer having at least the structure represented by the general formula (I) is not uniform since it varies depending on the type of the substituent, but is preferably from 500 to 10,000.
00, more preferably 700 to 700,000, still more preferably 1,000 to 500,000.
【0017】以下に一般式(I)で表される構造を少な
くとも有する重合体の具体例を示すが、本発明はこれら
に限定されるものではない。Specific examples of the polymer having at least the structure represented by the general formula (I) are shown below, but the present invention is not limited thereto.
【0018】[0018]
【化5】 Embedded image
【0019】[0019]
【化6】 Embedded image
【0020】[0020]
【化7】 Embedded image
【0021】[0021]
【化8】 Embedded image
【0022】[0022]
【化9】 Embedded image
【0023】[0023]
【化10】 Embedded image
【0024】[0024]
【化11】 Embedded image
【0025】[0025]
【化12】 Embedded image
【0026】[0026]
【化13】 Embedded image
【0027】[0027]
【化14】 Embedded image
【0028】[0028]
【化15】 Embedded image
【0029】[0029]
【化16】 Embedded image
【0030】[0030]
【化17】 Embedded image
【0031】[0031]
【化18】 Embedded image
【0032】[0032]
【化19】 Embedded image
【0033】[0033]
【化20】 Embedded image
【0034】[0034]
【化21】 Embedded image
【0035】[0035]
【化22】 Embedded image
【0036】[0036]
【化23】 Embedded image
【0037】[0037]
【化24】 Embedded image
【0038】[0038]
【化25】 Embedded image
【0039】[0039]
【化26】 Embedded image
【0040】[0040]
【化27】 Embedded image
【0041】本発明の重合体の重合法は問わないが、例
えばビスハロメチルアリーレンの塩基存在化での反応、
ジメチルアリーレンとジホルミルアリーレンとの縮合反
応、Wittig反応、スズキカップリング等が挙げら
れる。重合例として例えば、WO94/20589の方
法、Polymer,1994,vol.35,No.
2,p391の方法、特開平7−300580の方法等
が挙げられる。これらの重合法を用いる場合は、ラジカ
ル重合と異なり、数百から数千の比較的低分子量の重合
体が得られることがある。Although the polymerization method of the polymer of the present invention is not limited, for example, a reaction in the presence of a base of bishalomethylarylene,
Examples include a condensation reaction of dimethyl arylene and diformyl arylene, a Wittig reaction, a Suzuki coupling, and the like. Examples of polymerization are described in, for example, the method of WO94 / 20589, Polymer, 1994, vol. 35, No.
2, p391, the method of JP-A-7-300580, and the like. When these polymerization methods are used, hundreds to thousands of relatively low molecular weight polymers may be obtained, unlike radical polymerization.
【0042】重合溶媒は特に問わないが、例えば芳香族
炭化水素系(例えばベンゼン、トルエンなど)、ハロゲ
ン化炭化水素系(例えばジクロロエタン、クロロホルム
など)、エーテル系(例えばテトラヒドロフラン、ジオ
キサンなど)、アミド系(例えばジメチルホルムアミ
ド、ジメチルアセトアミドなど)、エステル系(例えば
酢酸エチルなど)、アルコール系(例えばメタノールな
ど)、ケトン系(例えばアセトン、シクロヘキサノンな
ど)、ニトロメタン、水、および二相系溶媒を含むこれ
らの混合溶媒などが挙げられる。溶媒の選択により、均
一系で重合する溶液重合、生成したポリマーが沈殿する
沈殿重合を行うこともできる。本発明の重合体を溶解す
る溶媒および塗布溶媒は、重合体の構造により自由に選
択することが可能である。例えば例示化合物1の様な高
極性のポリマーの場合だと水、メタノールおよび他のア
ルコール類、、蟻酸、酢酸、セロソルブ系溶媒、グリコ
ール系溶媒、ジオキサン等の種々の高極性溶媒およびこ
れらの混合溶媒に溶解させることが出来る。一方、例示
化合物2の様な低極性のポリマーの場合だと、テトラヒ
ドロフラン、ハロゲン系炭化水素溶媒、芳香族系炭化水
素系溶媒等の種々の低極性溶媒に溶解させる事が出来
る。この利点を生かし、例えば(置換)フェニレンビニ
レン系(コ)ポリマー、(置換)フルオレン系(コ)ポ
リマー、(置換)フェニレン系(コ)ポリマー等の低極
性発光ポリマーの上に高極性溶媒に溶解した本発明の重
合体を層間の混合なく、塗布プロセスのみにより積層す
ることが可能である。また、PEDOT−PSS膜(ポ
リエチレンジオキシチオフェン−ポリスチレンスルホン
酸ドープ体)の様な水系塗布した薄膜の上にクロロホル
ム等に溶解した本発明の重合体を層間の混合なく、塗布
プロセスのみにより積層することも同様に可能である。
好ましい塗布溶媒としては水、メタノール、エタノー
ル、プロパノール、イソプロパノール、ブタノール、蟻
酸、酢酸、メチルセロソルブ、エチルセロソルブ、エチ
レングリコール、プロピレングリコール、ジオキサン、
ベンゼン、トルエン、キシレン、クロロホルム、ジクロ
ロメタン、ジクロロエタン、テトラヒドロフラン及びこ
れらの混合溶媒が好ましく、水、メタノール、エタノー
ル、プロパノール、イソプロパノール、酢酸、メチルセ
ロソルブ、エチルセロソルブ、エチレングリコール、ジ
オキサン、トルエン、クロロホルム、ジクロロメタン、
ジクロロエタン、テトラヒドロフラン及びこれらの混合
溶媒が特に好ましい。Although the polymerization solvent is not particularly limited, for example, aromatic hydrocarbons (eg, benzene, toluene, etc.), halogenated hydrocarbons (eg, dichloroethane, chloroform, etc.), ethers (eg, tetrahydrofuran, dioxane, etc.), amides (Eg, dimethylformamide, dimethylacetamide, etc.), esters (eg, ethyl acetate, etc.), alcohols (eg, methanol, etc.), ketones (eg, acetone, cyclohexanone, etc.), nitromethane, water, and those containing two-phase solvents. A mixed solvent and the like can be mentioned. Depending on the selection of the solvent, solution polymerization in which polymerization is performed in a homogeneous system and precipitation polymerization in which the generated polymer precipitates can also be performed. The solvent for dissolving the polymer of the present invention and the coating solvent can be freely selected depending on the structure of the polymer. For example, in the case of a highly polar polymer such as Exemplified Compound 1, various highly polar solvents such as water, methanol and other alcohols, formic acid, acetic acid, cellosolve-based solvents, glycol-based solvents, dioxane and the like, and mixed solvents thereof Can be dissolved. On the other hand, in the case of a low-polarity polymer such as Exemplified Compound 2, it can be dissolved in various low-polarity solvents such as tetrahydrofuran, a halogenated hydrocarbon solvent, and an aromatic hydrocarbon solvent. Taking advantage of this advantage, it is dissolved in a highly polar solvent on a low-polarity light-emitting polymer such as a (substituted) phenylene vinylene (co) polymer, a (substituted) fluorene (co) polymer, and a (substituted) phenylene (co) polymer. The polymer of the present invention can be laminated only by a coating process without mixing between layers. Further, a polymer of the present invention dissolved in chloroform or the like is laminated on a water-based coated thin film such as a PEDOT-PSS film (polyethylenedioxythiophene-polystyrenesulfonic acid-doped material) only by a coating process without mixing between layers. It is equally possible.
Preferred coating solvents are water, methanol, ethanol, propanol, isopropanol, butanol, formic acid, acetic acid, methyl cellosolve, ethyl cellosolve, ethylene glycol, propylene glycol, dioxane,
Benzene, toluene, xylene, chloroform, dichloromethane, dichloroethane, tetrahydrofuran and mixed solvents thereof are preferable, and water, methanol, ethanol, propanol, isopropanol, acetic acid, methyl cellosolve, ethyl cellosolve, ethylene glycol, dioxane, toluene, chloroform, dichloromethane, dichloromethane,
Dichloroethane, tetrahydrofuran and their mixed solvents are particularly preferred.
【0043】本発明の発光素子は陽極、陰極の一対の電
極間に発光層もしくは発光層を含む複数の有機化合物薄
膜を形成した素子であり、発光層のほか正孔注入層、正
孔輸送層、電子注入層、電子輸送層、保護層などを有し
てもよく、またこれらの各層はそれぞれ他の機能を備え
たものであっても良い。各層の形成にはそれぞれ種々の
材料を用いることができる。The light-emitting device of the present invention is a device in which a light-emitting layer or a plurality of organic compound thin films including the light-emitting layer are formed between a pair of anode and cathode electrodes. , An electron injection layer, an electron transport layer, a protective layer, and the like, and each of these layers may have another function. Various materials can be used for forming each layer.
【0044】陽極は正孔注入層、正孔輸送層、発光層な
どに正孔を供給するものであり、金属、合金、金属酸化
物、導電性化合物、またこれらの混合物などを用いるこ
とが出来、好ましくは仕事関数が4eV以上の材料であ
る。具体例としては酸化スズ、酸化亜鉛、酸化インジウ
ム、酸化インジウムスズ(ITO)等の導電性金属酸化
物、あるいは金、銀、クロム、ニッケル等の金属、さら
にこれらの金属と導電性金属酸化物との混合物または積
層物、沃化銅、硫化銅などの無機導電性物質、ポリアニ
リン、ポリチオフェン、ポリピロールなどの有機導電性
材料、およびこれらとITOとの積層物などが挙げら
れ、好ましくは、導電性金属酸化物であり、特に生産
性、高導電性、透明性等の点からITOが好ましい。陽
極の膜厚は材料により適宜選択可能であるが、通常10
nm〜5μmの範囲のものが好ましく、より好ましく
は、50nm〜1μmであり、さらに好ましくは100
nm〜500nmである。The anode supplies holes to the hole injection layer, the hole transport layer, the light emitting layer, etc., and can be made of a metal, an alloy, a metal oxide, a conductive compound, or a mixture thereof. , Preferably a material having a work function of 4 eV or more. Specific examples include conductive metal oxides such as tin oxide, zinc oxide, indium oxide, and indium tin oxide (ITO), or metals such as gold, silver, chromium, and nickel, and furthermore, these metals and conductive metal oxides. Mixtures or laminates, inorganic conductive substances such as copper iodide and copper sulfide, organic conductive materials such as polyaniline, polythiophene and polypyrrole, and laminates of these with ITO, and the like. It is an oxide, and ITO is particularly preferable in terms of productivity, high conductivity, transparency, and the like. The thickness of the anode can be appropriately selected depending on the material.
It is preferably in the range of nm to 5 μm, more preferably 50 nm to 1 μm, and still more preferably 100 nm to 1 μm.
nm to 500 nm.
【0045】陽極は通常、ソーダライムガラス、無アル
カリガラス、透明樹脂基板などの上に層形成したものが
用いられる。ガラスを用いる場合、その材質について
は、ガラスからの溶出イオンを少なくするため、無アル
カリガラスを用いることが好ましい。また、ソーダライ
ムガラスを用いる場合、シリカなどのバリアコートを施
したものを使用する事が好ましい。基板の厚みは、機械
的強度を保つのに十分であれば特に制限はないが、ガラ
スを用いる場合には、通常0.2mm以上、好ましくは
0.7mm以上のものを用いる。陽極の作成には材料に
よって種々の方法が用いられるが、例えばITOの場
合、電子ビーム法、スパッタリング法、抵抗加熱蒸着
法、化学反応法(ゾル−ゲル法など)、酸化インジウム
スズの分散物の塗布などの方法で膜形成される。陽極は
洗浄その他の処理により、素子の駆動電圧を下げたり、
発光効率を高めることも可能である。例えばITOの場
合、UV−オゾン処理、プラズマ処理などが効果的であ
る。As the anode, a layer formed on a soda lime glass, an alkali-free glass, a transparent resin substrate or the like is usually used. When glass is used, it is preferable to use non-alkali glass in order to reduce ions eluted from the glass. When soda lime glass is used, it is preferable to use a glass coated with a barrier coat such as silica. The thickness of the substrate is not particularly limited as long as it is sufficient to maintain the mechanical strength. When glass is used, the thickness is usually 0.2 mm or more, preferably 0.7 mm or more. Various methods are used to form the anode depending on the material. For example, in the case of ITO, an electron beam method, a sputtering method, a resistance heating evaporation method, a chemical reaction method (such as a sol-gel method), and a dispersion of indium tin oxide are used. The film is formed by a method such as coating. The anode can be cleaned or otherwise treated to lower the device's drive voltage,
It is also possible to increase the luminous efficiency. For example, in the case of ITO, UV-ozone treatment, plasma treatment and the like are effective.
【0046】陰極は電子注入層、電子輸送層、発光層な
どに電子を供給するものであり、電子注入層、電子輸送
層、発光層などの負極と隣接する層との密着性やイオン
化ポテンシャル、安定性等を考慮して選ばれる。陰極の
材料としては金属、合金、金属ハロゲン化物、金属酸化
物、電気伝導性化合物、またはこれらの混合物を用いる
ことができ、具体例としてはアルカリ金属(例えばL
i、Na、K等)及びそのフッ化物、アルカリ土類金属
(例えばMg、Ca等)及びそのフッ化物、金、銀、
鉛、アルニウム、ナトリウム−カリウム合金またはそれ
らの混合金属、リチウム−アルミニウム合金またはそれ
らの混合金属、マグネシウム−銀合金またはそれらの混
合金属、インジウム、イッテリビウム等の希土類金属等
が挙げられ、好ましくは仕事関数が4eV以下の材料で
あり、より好ましくはアルミニウム、リチウム−アルミ
ニウム合金またはそれらの混合金属、マグネシウム−銀
合金またはそれらの混合金属等である。陰極は、上記化
合物及び混合物の単層構造だけでなく、上記化合物及び
混合物を含む積層構造を取ることもできる。陰極の膜厚
は材料により適宜選択可能であるが、通常10nm〜5
μmの範囲のものが好ましく、より好ましくは50nm
〜1μmであり、更に好ましくは100nm〜1μmで
ある。陰極の作製には電子ビーム法、スパッタリング
法、抵抗加熱蒸着法、コーティング法などの方法が用い
られ、金属を単体で蒸着することも、二成分以上を同時
に蒸着することもできる。さらに、複数の金属を同時に
蒸着して合金電極を形成することも可能であり、またあ
らかじめ調整した合金を蒸着させてもよい。陽極及び陰
極のシート抵抗は低い方が好ましく、15Ω/□以下が
好ましい。The cathode supplies electrons to the electron injection layer, the electron transport layer, the light-emitting layer, and the like. The cathode has good adhesion, ionization potential, and the like between the negative electrode such as the electron injection layer, the electron transport layer, and the light-emitting layer. It is selected in consideration of stability and the like. As a material for the cathode, a metal, an alloy, a metal halide, a metal oxide, an electrically conductive compound, or a mixture thereof can be used. Specific examples thereof include an alkali metal (for example, L
i, Na, K, etc.) and their fluorides, alkaline earth metals (eg, Mg, Ca, etc.) and their fluorides, gold, silver,
Lead, alnium, sodium-potassium alloy or a mixed metal thereof, lithium-aluminum alloy or a mixed metal thereof, magnesium-silver alloy or a mixed metal thereof, indium, rare earth metals such as ytterbium, and the like, preferably a work function Is 4 eV or less, more preferably aluminum, a lithium-aluminum alloy or a mixed metal thereof, a magnesium-silver alloy or a mixed metal thereof or the like. The cathode can have not only a single-layer structure of the compound and the mixture, but also a stacked structure including the compound and the mixture. The thickness of the cathode can be appropriately selected depending on the material, but is usually from 10 nm to 5 nm.
μm is preferable, and more preferably 50 nm
To 1 μm, and more preferably 100 nm to 1 μm. A method such as an electron beam method, a sputtering method, a resistance heating evaporation method, or a coating method is used for manufacturing the cathode, and a metal can be evaporated alone or two or more components can be simultaneously evaporated. Further, an alloy electrode can be formed by depositing a plurality of metals at the same time, or an alloy prepared in advance may be deposited. The sheet resistance of the anode and the cathode is preferably low, and is preferably 15Ω / □ or less.
【0047】発光層の材料は、電界印加時に陽極または
正孔注入層、正孔輸送層から正孔を注入することができ
ると共に陰極または電子注入層、電子輸送層から電子を
注入することができる機能や、注入された電荷を移動さ
せる機能、正孔と電子の再結合の場を提供して発光させ
る機能を有する層を形成することができるものであれば
何でもよい。好ましくは発光層に共役系不飽和化合物を
含有するものであるが、本発明の重合体を用いても他の
発光材料を用いてもよい。例えばベンゾオキサゾール誘
導体、ベンゾイミダゾール誘導体、ベンゾチアゾール誘
導体、スチリルベンゼン誘導体、ポリフェニル誘導体、
ジフェニルブタジエン誘導体、テトラフェニルブタジエ
ン誘導体、ナフタルイミド誘導体、クマリン誘導体、ペ
リレン誘導体、ペリノン誘導体、オキサジアゾール誘導
体、アルダジン誘導体、ピラリジン誘導体、シクロペン
タジエン誘導体、ビススチリルアントラセン誘導体、キ
ナクリドン誘導体、ピロロピリジン誘導体、チアジアゾ
ロピリジン誘導体、シクロペンタジエン誘導体、スチリ
ルアミン誘導体、芳香族ジメチリディン化合物、8−キ
ノリノール誘導体の金属錯体や希土類錯体に代表される
各種金属錯体等、(置換)ポリチオフェン、(置換)ポ
リフェニレン、(置換)ポリフルオレン、(置換)ポリ
フェニレンビニレン等のポリマー化合物等が挙げられ
る。発光層の膜厚は特に限定されるものではないが、通
常1nm〜5μmの範囲のものが好ましく、より好まし
くは5nm〜1μmであり、更に好ましくは10nm〜
500nmである。The material of the light emitting layer is capable of injecting holes from an anode or a hole injection layer or a hole transport layer and applying electrons from a cathode or an electron injection layer or an electron transport layer when an electric field is applied. Any material can be used as long as it can form a layer having a function, a function of transferring injected charges, and a function of providing a field of recombination of holes and electrons to emit light. Preferably, the light emitting layer contains a conjugated unsaturated compound, but the polymer of the present invention or another light emitting material may be used. For example, benzoxazole derivatives, benzimidazole derivatives, benzothiazole derivatives, styrylbenzene derivatives, polyphenyl derivatives,
Diphenylbutadiene derivative, tetraphenylbutadiene derivative, naphthalimide derivative, coumarin derivative, perylene derivative, perinone derivative, oxadiazole derivative, aldazine derivative, pyrazine derivative, cyclopentadiene derivative, bisstyrylanthracene derivative, quinacridone derivative, pyrrolopyridine derivative, (Substituted) polythiophene, (substituted) polyphenylene, (substituted), etc., such as asiazolopyridine derivatives, cyclopentadiene derivatives, styrylamine derivatives, aromatic dimethylidin compounds, various metal complexes represented by 8-quinolinol derivatives and rare earth complexes. Polymer compounds such as polyfluorene and (substituted) polyphenylenevinylene are exemplified. The thickness of the light emitting layer is not particularly limited, but is usually preferably in the range of 1 nm to 5 μm, more preferably 5 nm to 1 μm, and still more preferably 10 nm to 1 μm.
500 nm.
【0048】発光層の形成方法は、特に限定されるもの
ではないが、抵抗加熱蒸着、電子ビーム、スパッタリン
グ、分子積層法、コーティング法(スピンコート法、キ
ャスト法、ディップコート法など)、インクジェット
法、印刷法、LB法などの方法が用いられ、好ましくは
抵抗加熱蒸着、コーティング法である。The method for forming the light emitting layer is not particularly limited, but includes resistance heating evaporation, electron beam, sputtering, molecular lamination, coating (spin coating, casting, dip coating, etc.), and ink jetting. , A printing method, an LB method and the like, and preferably a resistance heating evaporation and a coating method.
【0049】正孔注入層、正孔輸送層の材料は、陽極か
ら正孔を注入する機能、正孔を輸送する機能、陰極から
注入された電子を障壁する機能のいずれか有しているも
のであればよく、本発明の重合体を用いても他の材料を
用いてもよい。その具体例としては、カルバゾール誘導
体、トリアゾール誘導体、オキサゾール誘導体、オキサ
ジアゾール誘導体、イミダゾール誘導体、ポリアリール
アルカン誘導体、ピラゾリン誘導体、ピラゾロン誘導
体、フェニレンジアミン誘導体、アリールアミン誘導
体、アミノ置換カルコン誘導体、スチリルアントラセン
誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチ
ルベン誘導体、シラザン誘導体、芳香族第三級アミン化
合物、スチリルアミン化合物、芳香族ジメチリディン系
化合物、ポルフィリン系化合物、ポリシラン系化合物、
ポリ(N−ビニルカルバゾール)誘導体、アニリン系共
重合体、チオフェンオリゴマー、ポリチオフェン、(置
換)ポリチオフェン−ポリスチレンスルホン酸混合物等
の導電性高分子オリゴマー等が挙げられる。正孔注入
層、正孔輸送層の膜厚は特に限定されるものではない
が、通常1nm〜5μmの範囲のものが好ましく、より
好ましくは5nm〜1μmであり、更に好ましくは10
nm〜500nmである。正孔注入層、正孔輸送層は上
述した材料の1種または2種以上からなる単層構造であ
ってもよいし、同一組成または異種組成の複数層からな
る多層構造であってもよい。The material of the hole injection layer and the hole transport layer has any of a function of injecting holes from the anode, a function of transporting holes, and a function of blocking electrons injected from the cathode. Any material may be used, and the polymer of the present invention or another material may be used. Specific examples thereof include carbazole derivatives, triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, and styryl anthracene derivatives , Fluorenone derivative, hydrazone derivative, stilbene derivative, silazane derivative, aromatic tertiary amine compound, styrylamine compound, aromatic dimethylidin compound, porphyrin compound, polysilane compound,
Conductive polymer oligomers such as poly (N-vinylcarbazole) derivatives, aniline-based copolymers, thiophene oligomers, polythiophenes, (substituted) polythiophene-polystyrenesulfonic acid mixtures, and the like. The thickness of the hole injection layer and the hole transport layer is not particularly limited, but is usually preferably in the range of 1 nm to 5 μm, more preferably 5 nm to 1 μm, and still more preferably 10 nm to 1 μm.
nm to 500 nm. The hole injection layer and the hole transport layer may have a single-layer structure composed of one or more of the above-described materials, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions.
【0050】正孔注入層、正孔輸送層の形成方法として
は、真空蒸着法やLB法、インクジェット法、印刷法、
前記正孔注入輸送剤を溶媒に溶解または分散させてコー
ティングする方法(スピンコート法、キャスト法、ディ
ップコート法など)が用いられる。コーティング法の場
合、樹脂成分と共に溶解または分散することができ、樹
脂成分としては例えば、ポリ塩化ビニル、ポリカーボネ
ート、ポリスチレン、ポリメチルメタクリレート、ポリ
ブチルメタクリレート、ポリエステル、ポリスルホン、
ポリフェニレンオキシド、ポリブタジエン、ポリ(N−
ビニルカルバゾール)、炭化水素樹脂、ケトン樹脂、フ
ェノキシ樹脂、ポリアミド、エチルセルロース、酢酸ビ
ニル、ABS樹脂、ポリウレタン、メラミン樹脂、不飽
和ポリエステル樹脂、アルキド樹脂、エポキシ樹脂、シ
リコン樹脂などが挙げられる。As a method for forming the hole injection layer and the hole transport layer, a vacuum deposition method, an LB method, an ink jet method, a printing method,
A method of coating by dissolving or dispersing the hole injecting and transporting agent in a solvent (spin coating, casting, dip coating, etc.) is used. In the case of the coating method, it can be dissolved or dispersed together with the resin component.Examples of the resin component include polyvinyl chloride, polycarbonate, polystyrene, polymethyl methacrylate, polybutyl methacrylate, polyester, and polysulfone.
Polyphenylene oxide, polybutadiene, poly (N-
Vinyl carbazole), hydrocarbon resin, ketone resin, phenoxy resin, polyamide, ethyl cellulose, vinyl acetate, ABS resin, polyurethane, melamine resin, unsaturated polyester resin, alkyd resin, epoxy resin, silicone resin, and the like.
【0051】電子注入層、電子輸送層の材料は、陰極か
ら電子を注入する機能、電子を輸送する機能、陽極から
注入された正孔を障壁する機能のいずれか有しているも
のであればよい。その具体例としては、本発明の化合物
またはトリアゾール誘導体、オキサゾール誘導体、オキ
サジアゾール誘導体、フルオレノン誘導体、アントラキ
ノジメタン誘導体、アントロン誘導体、ジフェニルキノ
ン誘導体、チオピランジオキシド誘導体、カルビジイミ
ド誘導体、フルオレニリデンメタン誘導体、ジスチリル
ピラジン誘導体、ナフタレンペリレン等の複素環テトラ
カルボン酸無水物、フタロシアニン誘導体、8−キノリ
ノール誘導体の金属錯体やメタルフタロシアニン、ベン
ゾオキサゾールやベンゾチアゾールを配位子とする金属
錯体に代表される各種金属錯体等が挙げられる。電子注
入層、電子輸送層の膜厚は特に限定されるものではない
が、通常1nm〜5μmの範囲のものが好ましく、より
好ましくは5nm〜1μmであり、更に好ましくは10
nm〜500nmである。電子注入層、電子輸送層は上
述した材料の1種または2種以上からなる単層構造であ
ってもよいし、同一組成または異種組成の複数層からな
る多層構造であってもよい。The material of the electron injecting layer and the electron transporting layer is not limited as long as it has a function of injecting electrons from the cathode, a function of transporting electrons, and a function of blocking holes injected from the anode. Good. Specific examples thereof include a compound of the present invention or a triazole derivative, an oxazole derivative, an oxadiazole derivative, a fluorenone derivative, an anthraquinodimethane derivative, an anthrone derivative, a diphenylquinone derivative, a thiopyrandioxide derivative, a carbodiimide derivative, a fluorenide derivative. Representative metal complexes of heterocyclic tetracarboxylic anhydrides such as redenemethane derivatives, distyrylpyrazine derivatives, and naphthalene perylene, phthalocyanine derivatives, and 8-quinolinol derivatives, and metal complexes having metal phthalocyanine, benzoxazole, and benzothiazole as ligands Metal complexes to be used. The thickness of the electron injecting layer and the electron transporting layer is not particularly limited, but is usually preferably in the range of 1 nm to 5 μm, more preferably 5 nm to 1 μm, and still more preferably 10 nm to 1 μm.
nm to 500 nm. The electron injection layer and the electron transport layer may have a single layer structure composed of one or more of the above-mentioned materials, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions.
【0052】電子注入層、電子輸送層の形成方法として
は、真空蒸着法やLB法、インクジェット法、印刷法、
前記電子注入輸送剤を溶媒に溶解または分散させてコー
ティングする方法(スピンコート法、キャスト法、ディ
ップコート法など)などが用いられる。コーティング法
の場合、樹脂成分と共に溶解または分散することがで
き、樹脂成分としては例えば、正孔注入輸送層の場合に
例示したものが適用できる。The method for forming the electron injection layer and the electron transport layer includes a vacuum deposition method, an LB method, an ink jet method, a printing method, and the like.
For example, a method of dissolving or dispersing the electron injecting / transporting agent in a solvent and coating (eg, spin coating, casting, dip coating, etc.) is used. In the case of the coating method, it can be dissolved or dispersed together with the resin component. As the resin component, for example, those exemplified in the case of the hole injection transport layer can be applied.
【0053】保護層の材料としては水分や酸素等の素子
劣化を促進するものが素子内に入ることを抑止する機能
を有しているものであればよい。その具体例としては、
In、Sn、Pb、Au、Cu、Ag、Al、Ti、N
i等の金属、MgO、SiO、SiO2 、Al2 O3 、
GeO、NiO、CaO、BaO、Fe2 O3 、Y2O
3 、TiO2 等の金属酸化物、MgF2 、LiF、Al
F3 、CaF2 等の金属フッ化物、ポリエチレン、ポリ
プロピレン、ポリメチルメタクリレート、ポリイミド、
ポリウレア、ポリテトラフルオロエチレン、ポリクロロ
トリフルオロエチレン、ポリジクロロジフルオロエチレ
ン、クロロトリフルオロエチレンとジクロロジフルオロ
エチレンとの共重合体、テトラフルオロエチレンと少な
くとも1種のコモノマーとを含むモノマー混合物を共重
合させて得られる共重合体、共重合主鎖に環状構造を有
する含フッ素共重合体、吸水率1%以上の吸水性物質、
吸水率0.1%以下の防湿性物質等が挙げられる。As the material of the protective layer, any material may be used as long as it has a function of preventing a substance which promotes element deterioration such as moisture and oxygen from entering the element. As a specific example,
In, Sn, Pb, Au, Cu, Ag, Al, Ti, N
metal such as i, MgO, SiO, SiO 2 , Al 2 O 3 ,
GeO, NiO, CaO, BaO, Fe 2 O 3, Y 2 O
3, a metal oxide such as TiO 2, MgF 2, LiF, Al
F 3 , metal fluoride such as CaF 2 , polyethylene, polypropylene, polymethyl methacrylate, polyimide,
Polyurea, polytetrafluoroethylene, polychlorotrifluoroethylene, polydichlorodifluoroethylene, copolymer of chlorotrifluoroethylene and dichlorodifluoroethylene, copolymerizing a monomer mixture containing tetrafluoroethylene and at least one comonomer Copolymer obtained, a fluorine-containing copolymer having a cyclic structure in the copolymer main chain, a water-absorbing substance having a water absorption of 1% or more,
A moisture-proof substance having a water absorption of 0.1% or less can be used.
【0054】保護層の形成方法についても特に限定はな
く、例えば真空蒸着法、スパッタリング法、反応性スパ
ッタリング法、MBE(分子線エピタキシ)法、クラス
ターイオンビーム法、イオンプレーティング法、プラズ
マ重合法(高周波励起イオンプレーティング法)、プラ
ズマCVD法、レーザーCVD法、熱CVD法、ガスソ
ースCVD法、インクジェット法、印刷法、コーティン
グ法を適用できる。The method for forming the protective layer is not particularly limited. For example, a vacuum deposition method, a sputtering method, a reactive sputtering method, an MBE (molecular beam epitaxy) method, a cluster ion beam method, an ion plating method, a plasma polymerization method ( High-frequency excitation ion plating method), plasma CVD method, laser CVD method, thermal CVD method, gas source CVD method, inkjet method, printing method, and coating method can be applied.
【0055】[0055]
【実施例】以下に実施例を挙げて本発明を具体的に説明
するが、本発明はこれにより限定されるものではない。 実施例1(例示化合物1の合成) 200mlのフラスコに窒素気流下、乾燥したテトラヒ
ドロフラン(THF)60ml、tBuOK2.20g
(19.60mmol、6.9当量)を入れ攪拌して溶
解した。次いで2,6−ビス(クロロメチル)ピリジン
(0.5g、2.84mmol)のTHF溶液(10m
l)を20分かけて滴下した。その後、室温で20時間
攪拌した。次いで反応混合物を酢酸エチルとTHFの混
合溶媒中に滴下した。生じた沈殿を濾別し真空乾燥して
例示化合物1のポリマー0.19gを得た。収率65
%。このポリマーの分子量をゲルパーミエーションクロ
マトグラフィー(GPC)により測定した結果(ポリス
チレンスタンダード換算;MeOH/水エルーショ
ン)、重量平均分子量12000、数平均分子量980
0であった。またこのポリマーは水、MeOHに可溶で
あった。EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited thereto. Example 1 (Synthesis of Exemplified Compound 1) 60 ml of dried tetrahydrofuran (THF) and 2.20 g of tBuOK were placed in a 200 ml flask under a nitrogen stream.
(19.60 mmol, 6.9 equivalents) was added and dissolved by stirring. Then, a THF solution of 2,6-bis (chloromethyl) pyridine (0.5 g, 2.84 mmol) (10 m
l) was added dropwise over 20 minutes. Thereafter, the mixture was stirred at room temperature for 20 hours. Then, the reaction mixture was dropped into a mixed solvent of ethyl acetate and THF. The resulting precipitate was separated by filtration and vacuum dried to obtain 0.19 g of a polymer of Exemplified Compound 1. Yield 65
%. As a result of measuring the molecular weight of this polymer by gel permeation chromatography (GPC) (polystyrene standard conversion; MeOH / water aeration), the weight average molecular weight was 12,000, and the number average molecular weight was 980.
It was 0. This polymer was soluble in water and MeOH.
【0056】実施例2(例示化合物2の合成) 2,6−ビス(クロロメチル)ピリジン(0.5g、
2.84mmol)のTHF溶液を2,6−ビス(クロ
ロメチル)ピリジン(0.375g、2.13mmo
l)および2,5−ビス(クロロメチル)−1−(2−
エチルへキシルオキシ)−4−メトキシベンゼン(0.
237g、0.71mmol)のTHF溶液に換えた他
はすべて実施例1と同様にして例示化合物2のポリマー
0.35gを得た。収率70%。このポリマーの分子量
をGPCにより測定した結果(ポリスチレンスタンダー
ド換算;THFエルーション)、重量平均分子量130
00、数平均分子量11000であった。またこのポリ
マーはクロロホルムに可溶であった。Example 2 (Synthesis of Exemplified Compound 2) 2,6-bis (chloromethyl) pyridine (0.5 g,
(2.48 mmol) in THF was added to 2,6-bis (chloromethyl) pyridine (0.375 g, 2.13 mmol).
l) and 2,5-bis (chloromethyl) -1- (2-
Ethylhexyloxy) -4-methoxybenzene (0.
237 g (0.71 mmol) of a THF solution was obtained in the same manner as in Example 1 except for obtaining a polymer of Exemplified Compound 2 (0.35 g). Yield 70%. As a result of measuring the molecular weight of this polymer by GPC (in terms of polystyrene standard; THF aeration), the weight average molecular weight was 130.
The number average molecular weight was 11,000. This polymer was soluble in chloroform.
【0057】実施例3(例示化合物23の合成) 100mlの三つ口フラスコに、窒素気流下、2,5−
ビス(クロロメチル)−1,4−ジ−n―オクチルオキ
シベンゼンとトリフェニルフォスフィンとを反応させて
得られたフォスフォニウム塩0.956g、0.915
mmol、イソフタルアルデヒド0.0268g、0.
200mmol、2,6−ピリジンジカルボキシアルデ
ヒド0.108g、0.798mmol、エタノール2
5mlを入れ室温で攪拌した。次いでナトリウムエトキ
シドのエタノール溶液(ナトリウムエトキシド3mmo
l、エタノール5ml)を滴下し、室温で15時間攪拌
した。生成したガム状沈殿を取り出し、エタノールで洗
浄した後、沈殿をクロロホルムに溶解し、エタノール中
へ再沈殿して精製した。次いで真空乾燥して目的のポリ
マーが0.25gを得た。収率55%。重量平均分子量
7200、数平均分子量24500。Example 3 (Synthesis of Exemplified Compound 23) In a 100 ml three-necked flask, 2,5-
0.956 g of a phosphonium salt obtained by reacting bis (chloromethyl) -1,4-di-n-octyloxybenzene with triphenylphosphine, 0.915 g
mmol, 0.0268 g of isophthalaldehyde, 0.1.
200 mmol, 0.108 g of 2,6-pyridinedicarboxaldehyde, 0.798 mmol, ethanol 2
5 ml was added and the mixture was stirred at room temperature. Next, an ethanol solution of sodium ethoxide (sodium ethoxide 3 mmol)
1 and ethanol (5 ml) were added dropwise, followed by stirring at room temperature for 15 hours. The produced gummy precipitate was taken out and washed with ethanol, and the precipitate was dissolved in chloroform and reprecipitated into ethanol for purification. Then, it was dried under vacuum to obtain 0.25 g of the target polymer. 55% yield. Weight average molecular weight 7200, number average molecular weight 24500.
【0058】実施例4 洗浄したITO基板上に、PPVプレカーサー溶液(ケ
ンブリッジディスプレイテクノロジー社製)をスピンコ
ートした後、150℃で2時間真空乾燥し、PPV膜を
作成した(膜厚約100nm)。この上に、例示化合物
1のポリマー20mgをメタノール2mlに溶かした溶
液をスピンコート(3000rpm、20秒)した(膜
厚約20nm)。次いでこの有機薄膜上にパターニング
したマスク(発光面積が5mm×5mmとなるマスク)
を設置し、蒸着装置内でマグネシウム:銀=10:1を
250nm共蒸着した後、銀300nmを蒸着した
(1.0×10-3Pa〜1.3×10-3Pa)。発光特
性は次の通り測定した。東陽テクニカ製ソースメジャー
ユニット2400型を用いて、ITOを陽極、Mg:A
gを陰極として直流定電圧をEL素子に印加し発光さ
せ、その輝度をトプコン社の輝度計BM−8、発光波長
を浜松フォトニクス社製スペクトルアナライザーPMA
−11を用いて測定した。また、作製した素子を60
℃、20%RHの条件下に3時間放置後発光させた相対
輝度(素子作製直後の輝度を100とした場合の経時後
の輝度を相対値で表した値(駆動電圧10V))を評価
した。その結果、3Vから発光が観測され、7Vで10
35mA/cm2の電流密度を示し、501Cd/sq
mの緑色発光を示した。発光波長λmaxは500nm
であった。経時後の相対輝度は78であった。Example 4 A PPV precursor solution (manufactured by Cambridge Display Technology Co., Ltd.) was spin-coated on a washed ITO substrate, followed by vacuum drying at 150 ° C. for 2 hours to form a PPV film (about 100 nm thick). A solution prepared by dissolving 20 mg of the polymer of Exemplified Compound 1 in 2 ml of methanol was spin-coated thereon (3000 rpm, 20 seconds) (film thickness: about 20 nm). Next, a mask patterned on this organic thin film (a mask having a light emitting area of 5 mm × 5 mm)
It was placed, magnesium in a vapor deposition apparatus: silver = 10: 1 was deposited 250nm co were deposited silver 300nm (1.0 × 10 -3 Pa~1.3 × 10 -3 Pa). The emission characteristics were measured as follows. Using Toyo Technica Source Measure Unit Model 2400, ITO as anode, Mg: A
g is used as a cathode, a DC constant voltage is applied to the EL element to emit light, the luminance of which is measured by a luminance meter BM-8 manufactured by Topcon, and the emission wavelength is measured by a spectrum analyzer PMA manufactured by Hamamatsu Photonics.
It measured using -11. In addition, the fabricated device was
The relative luminance (luminance after lapse of time assuming that the luminance immediately after device production was 100, expressed as a relative value (driving voltage: 10 V)) was evaluated after leaving the device for 3 hours under conditions of 20 ° C. and 20% RH. . As a result, light emission was observed from 3 V, and 10
It shows a current density of 35 mA / cm 2 and 501 Cd / sq
m emitted green light. The emission wavelength λmax is 500 nm
Met. The relative luminance after aging was 78.
【0059】実施例5 実施例4と同様にしてITO/PPV(100nm)/
例示化合物2(50nm)/Mg−Agの素子を作成し
た。発光特性は実施例4と同様に測定した。その結果、
16Vで300mA/cm2の電流密度を示し、953
Cd/sqmの緑色発光を示した。発光波長λmaxは
575nmおよび617nmであった。経時後の相対輝
度は82であった。Example 5 In the same manner as in Example 4, ITO / PPV (100 nm) /
A device of Exemplified Compound 2 (50 nm) / Mg-Ag was prepared. The light emission characteristics were measured in the same manner as in Example 4. as a result,
It shows a current density of 300 mA / cm 2 at 16 V and 953
It emitted Cd / sqm green light. The emission wavelengths λmax were 575 nm and 617 nm. The relative luminance after aging was 82.
【0060】実施例6 洗浄したITO基板上に、Baytron P(PED
OT−PSS溶液(ポリエチレンジオキシチオフェン−
ポリスチレンスルホン酸ドープ体)/バイエル社製)を
2000rpm、60秒でスピンコートした後、100
℃で1時間真空乾燥し、ホール輸送性膜を作成した(膜
厚約100nm)。この上にポリ(9,9−ジオクチル
フルオレン)20mgをクロロホルム2mlに溶かした
溶液をスピンコート(1000rpm、20秒)した
(膜厚約70nm)。この上に、例示化合物1のポリマ
ー20mgをメタノール2mlに溶かした溶液をスピン
コート(5000rpm、20秒)した(膜厚約10n
m)。次いでこの有機薄膜上にパターニングしたマスク
(発光面積が5mm×5mmとなるマスク)を設置し、
蒸着装置内でアルミニウムを400nm蒸着した。発光
特性は実施例4と同様に測定した。その結果、10Vで
657mA/cm2の電流密度を示し、5180Cd/
sqmの青色発光を示した。発光波長λmaxは430
nmであった。経時後の相対輝度は77であった。Example 6 Baytron P (PED) was placed on a cleaned ITO substrate.
OT-PSS solution (polyethylenedioxythiophene-
(Polystyrene sulfonic acid dope) / Bayer) was spin-coated at 2000 rpm for 60 seconds, and then 100
Vacuum drying was performed at 1 ° C. for 1 hour to form a hole transporting film (film thickness: about 100 nm). A solution obtained by dissolving 20 mg of poly (9,9-dioctylfluorene) in 2 ml of chloroform was spin-coated thereon (1000 rpm, 20 seconds) (film thickness: about 70 nm). A solution obtained by dissolving 20 mg of the polymer of Exemplified Compound 1 in 2 ml of methanol was spin-coated thereon (5000 rpm, 20 seconds) (film thickness: about 10 n).
m). Next, a mask (a mask having a light emitting area of 5 mm × 5 mm) patterned on the organic thin film is provided,
400 nm of aluminum was deposited in a deposition apparatus. The light emission characteristics were measured in the same manner as in Example 4. As a result, it showed a current density of 657 mA / cm 2 at 10 V and 5180 Cd /
It emitted blue light of sqm. The emission wavelength λmax is 430
nm. The relative luminance after aging was 77.
【0061】実施例7 実施例6と同様にしてITO/ポリ(9,9−ジオクチ
ルフルオレン)(100nm)/例示化合物9(30n
m)/Alの素子を作成した。発光特性は実施例4と同
様に測定した。その結果、5Vで200mA/cm2の
電流密度を示し、1126Cd/sqmの青色発光を示
した。発光波長λmaxは431nmであった。経時後
の相対輝度は85であった。Example 7 In the same manner as in Example 6, ITO / poly (9,9-dioctylfluorene) (100 nm) / Exemplified Compound 9 (30n)
m) / Al device was prepared. The light emission characteristics were measured in the same manner as in Example 4. As a result, it showed a current density of 200 mA / cm 2 at 5 V and emitted blue light of 1126 Cd / sqm. The emission wavelength λmax was 431 nm. The relative luminance after aging was 85.
【0062】比較例1 実施例4と同様にして、ITO/ポリフェニレンビニレ
ン(50nm)/Mg−Agの素子を作成し、発光特性
を測定した。その結果、4Vから発光が観測され、8V
の電圧をかけたところ、2025mA/cm2の電流値
を示し、120Cd/sqmの輝度を示したに過ぎなか
った。発光波長λmaxは500nmであった。経時後
の相対輝度は28であった。Comparative Example 1 In the same manner as in Example 4, an element of ITO / polyphenylenevinylene (50 nm) / Mg-Ag was prepared, and the light emission characteristics were measured. As a result, light emission was observed from 4 V and 8 V
When the voltage was applied, a current value of 2025 mA / cm 2 was exhibited, and only a luminance of 120 Cd / sqm was exhibited. The emission wavelength λmax was 500 nm. The relative luminance after aging was 28.
【0063】比較例2 実施例5と同様にして、ITO/ポリフェニレンビニレ
ン(50nm)/ポリ(2,5−ピリジンジイル)(3
0nm)/Mg−Agの素子を作成し、発光特性を測定
した。その結果、8Vの電圧をかけたところ、25mA
/cm2の電流値を示し、135Cd/sqmの輝度を
示したに過ぎなかった。発光波長λmaxは540nm
であり、ポリフェニレンビニレンのからの発光は得られ
なかった。経時後の相対輝度は28であった。Comparative Example 2 In the same manner as in Example 5, ITO / polyphenylenevinylene (50 nm) / poly (2,5-pyridinediyl) (3
0 nm) / Mg-Ag device was prepared, and the emission characteristics were measured. As a result, when a voltage of 8 V was applied, 25 mA
/ Cm 2 and a luminance of only 135 Cd / sqm. Emission wavelength λmax is 540 nm
No light emission from polyphenylenevinylene was obtained. The relative luminance after aging was 28.
【0064】比較例3 実施例6と同様にしてITO/ポリ(9,9−ジオクチ
ルフルオレン)(100nm)/比較化合物1(30n
m)/Alの素子を作成しようとしたが、ポリ(9,9
−ジオクチルフルオレン)の塗布溶媒系(ハロゲン系炭
化水素またはTHF)と比較化合物1の塗布溶媒系(ハ
ロゲン系炭化水素またはTHF)の極性が近似している
為、積層塗布の際に層混合が発生し、積層構成の素子が
作成出来なかった。また、この層混合した素子の発光特
性を上記実施例と同様に測定したが、全く発光しなかっ
た。Comparative Example 3 In the same manner as in Example 6, ITO / poly (9,9-dioctylfluorene) (100 nm) / Comparative compound 1 (30 n
m) / Al device, but poly (9, 9)
-Dioctylfluorene) is similar in polarity to the coating solvent system (halogenated hydrocarbon or THF) of Comparative Compound 1 because of the similarity in polarity between the coating solvent system (halogenated hydrocarbon or THF) and layer mixing occurs during lamination coating. However, an element having a laminated structure could not be produced. The light emitting characteristics of the device obtained by mixing the layers were measured in the same manner as in the above example, but no light was emitted.
【0065】[0065]
【化28】 Embedded image
【0066】比較例4 実施例6と同様にしてITO/ポリ(9,9−ジオクチ
ルフルオレン)(100nm)/比較化合物2(30n
m)/Alの素子を作成しようとしたが、ポリ(9,9
−ジオクチルフルオレン)の塗布溶媒系(ハロゲン系炭
化水素またはTHF)と比較化合物2の塗布溶媒系(ハ
ロゲン系炭化水素またはTHF)の極性が近似している
為、積層塗布の際に層混合が発生し、積層構成の素子が
作成出来なかった。また、この層混合した素子の発光特
性を上記実施例と同様に測定したが、全く発光しなかっ
た。Comparative Example 4 In the same manner as in Example 6, ITO / poly (9,9-dioctylfluorene) (100 nm) / Comparative compound 2 (30 n)
m) / Al device, but poly (9, 9)
-Dioctylfluorene) coating solvent system (halogenated hydrocarbon or THF) and Comparative Compound 2 coating solvent system (halogenated hydrocarbon or THF) have similar polarities, so layer mixing occurs during lamination coating. However, an element having a laminated structure could not be produced. The light emitting characteristics of the device obtained by mixing the layers were measured in the same manner as in the above example, but no light was emitted.
【0067】[0067]
【化29】 Embedded image
【0068】これらの結果より、本発明の化合物を用い
た素子では緑色発光および青色発光どちらの場合にも電
子輸送材料として機能できるばかりでなく、それ自身発
光材料としても有用であることが判る。また、ポリマー
の極性の差異を利用して塗布プロセスのみで積層膜を形
成することが可能である。更に最低駆動電圧が低く、か
つ高輝度発光が可能であり、高温保管後の輝度低下が小
さく耐久性に優れていることがわかる。From these results, it is understood that the device using the compound of the present invention can function not only as an electron transporting material in both green light emission and blue light emission, but also as a light emitting material itself. In addition, it is possible to form a laminated film only by a coating process using the difference in polarity between polymers. Further, it can be seen that the minimum driving voltage is low, high-luminance light emission is possible, and the luminance decrease after storage at high temperature is small and the durability is excellent.
【0069】[0069]
【発明の効果】本発明により、電子親和力の高いポリマ
ーを提供する事ができる。また塗布プロセスのみで低極
性発光ポリマーの上に層混合することなく電子輸送層を
積層し、高輝度発光が可能で耐久性良好な有機発光素子
を得る事ができる。特に通常輝度の低い塗布方式でも良
好な発光特性が得られ、製造コスト面等で有利な素子作
製が可能である。According to the present invention, a polymer having a high electron affinity can be provided. Further, the electron transport layer is laminated on the low-polarity light-emitting polymer without mixing the layers only by the coating process, so that an organic light-emitting device that can emit light with high luminance and has excellent durability can be obtained. In particular, good light-emitting characteristics can be obtained even by a coating method with low luminance, and an element can be produced which is advantageous in terms of manufacturing cost.
Claims (8)
くとも一つ有する重合体。 【化1】 (式中、Arは共役不飽和基を表す。ただし、窒素原子
を2個以上有する含窒素ヘテロ環は除く。mおよびnは
ポリマー中のモル分率を表し、m+n=100である。
nは0以上100未満の数値を表す。Rは水素原子又は
置換基を表す。ただし、Arが置換フルオレン環、アル
コキシ置換ベンゼン環の場合はnが50の値をとること
はない。)1. A polymer having at least one structure represented by the following general formula (I). Embedded image (In the formula, Ar represents a conjugated unsaturated group. However, a nitrogen-containing heterocyclic ring having two or more nitrogen atoms is excluded. M and n each represent a mole fraction in the polymer, and m + n = 100.)
n represents a numerical value of 0 or more and less than 100. R represents a hydrogen atom or a substituent. However, when Ar is a substituted fluorene ring or an alkoxy-substituted benzene ring, n does not take a value of 50. )
を2個以上有する含窒素ヘテロ環、置換フルオレン環、
およびアルコキシ置換ベンゼン環以外の共役不飽和基で
あることを特徴とする請求項1の新規重合体。2. In the general formula (I), Ar is a nitrogen-containing heterocyclic ring having two or more nitrogen atoms, a substituted fluorene ring,
And a conjugated unsaturated group other than an alkoxy-substituted benzene ring.
くとも一つ有する重合体であることを特徴とする発光素
子材料。 【化2】 (式中、Arは共役不飽和基を表す。ただし、窒素原子
を2個以上有する含窒素ヘテロ環は除く。mおよびnは
ポリマー中のモル分率を表し、m+n=100である。
nは0以上100未満の数値を表す。Rは水素原子又は
置換基を表す。ただし、Arが置換フルオレン環、アル
コキシ置換ベンゼン環の場合はnが50の値をとること
はない。)3. A light emitting device material comprising a polymer having at least one structure represented by the following general formula (I). Embedded image (In the formula, Ar represents a conjugated unsaturated group. However, a nitrogen-containing heterocyclic ring having two or more nitrogen atoms is excluded. M and n each represent a mole fraction in the polymer, and m + n = 100.)
n represents a numerical value of 0 or more and less than 100. R represents a hydrogen atom or a substituent. However, when Ar is a substituted fluorene ring or an alkoxy-substituted benzene ring, n does not take a value of 50. )
を2個以上有する含窒素ヘテロ環、置換フルオレン環、
およびアルコキシ置換ベンゼン環以外の共役不飽和基で
あることを特徴とする請求項3の発光素子材料。4. In the general formula (I), Ar is a nitrogen-containing heterocyclic ring having two or more nitrogen atoms, a substituted fluorene ring,
4. The light emitting device material according to claim 3, which is a conjugated unsaturated group other than an alkoxy-substituted benzene ring.
含む複数の有機化合物薄層を形成した発光素子におい
て、少なくとも一層が請求項3の重合体を少なくとも一
つ含有することを特徴とする発光素子。5. A light-emitting element in which a light-emitting layer or a plurality of organic compound thin layers including a light-emitting layer is formed between a pair of electrodes, wherein at least one layer contains at least one polymer according to claim 3. Light emitting element.
含む複数の有機化合物薄層を形成した発光素子におい
て、少なくとも一層が請求項3記載の重合体を少なくと
も一つ塗布することにより成膜した層であることを特徴
とする発光素子。6. A light-emitting element having a light-emitting layer or a plurality of organic compound thin layers including a light-emitting layer formed between a pair of electrodes, wherein at least one layer is formed by applying at least one polymer according to claim 3. A light-emitting element characterized in that it is a layer formed.
含む複数の有機化合物薄層を形成した発光素子におい
て、少なくとも一層が請求項4の重合体を少なくとも一
つ含有することを特徴とする発光素子。7. A light-emitting element in which a light-emitting layer or a plurality of organic compound thin layers including a light-emitting layer is formed between a pair of electrodes, wherein at least one layer contains at least one polymer according to claim 4. Light emitting element.
含む複数の有機化合物薄層を形成した発光素子におい
て、少なくとも一層が請求項4記載の重合体を少なくと
も一つ塗布することにより成膜した層であることを特徴
とする発光素子。8. A light-emitting element in which a light-emitting layer or a plurality of organic compound thin layers including a light-emitting layer is formed between a pair of electrodes, wherein at least one layer is formed by applying at least one polymer according to claim 4. A light-emitting element characterized in that it is a layer formed.
Priority Applications (1)
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Cited By (7)
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JP2003347063A (en) * | 2002-05-23 | 2003-12-05 | Toshiba Corp | Organic electroluminescent display element and manufacturing method therefor |
US6926973B2 (en) | 2001-12-19 | 2005-08-09 | Sumitomo Chemical Company, Limited | Copolymer, polymer composition and polymer light-emitting device |
JP2008001899A (en) * | 2001-04-27 | 2008-01-10 | Sumitomo Chemical Co Ltd | Block copolymer and polymer light emitting device |
DE112006002642T5 (en) | 2005-10-07 | 2008-08-21 | Sumitomo Chemical Company, Ltd. | Polymer and polymeric luminescent element using this |
KR101015032B1 (en) | 2002-10-30 | 2011-02-16 | 시바 홀딩 인크 | New Polymers for Optical Devices |
JP2011529975A (en) * | 2008-08-01 | 2011-12-15 | ケンブリッジ ディスプレイ テクノロジー リミテッド | Organic light emitting material and element |
JP2016504455A (en) * | 2012-12-18 | 2016-02-12 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | Semiconductor material based on naphthalene diimide-vinylene-oligothiophene-vinylene polymer |
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2000
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008001899A (en) * | 2001-04-27 | 2008-01-10 | Sumitomo Chemical Co Ltd | Block copolymer and polymer light emitting device |
US6926973B2 (en) | 2001-12-19 | 2005-08-09 | Sumitomo Chemical Company, Limited | Copolymer, polymer composition and polymer light-emitting device |
EP2033979A1 (en) | 2001-12-19 | 2009-03-11 | Sumitomo Chemical Company, Limited | Copolymer or polymer composition and polymer light-emitting device |
JP2003347063A (en) * | 2002-05-23 | 2003-12-05 | Toshiba Corp | Organic electroluminescent display element and manufacturing method therefor |
KR101015032B1 (en) | 2002-10-30 | 2011-02-16 | 시바 홀딩 인크 | New Polymers for Optical Devices |
DE112006002642T5 (en) | 2005-10-07 | 2008-08-21 | Sumitomo Chemical Company, Ltd. | Polymer and polymeric luminescent element using this |
JP2011529975A (en) * | 2008-08-01 | 2011-12-15 | ケンブリッジ ディスプレイ テクノロジー リミテッド | Organic light emitting material and element |
JP2016504455A (en) * | 2012-12-18 | 2016-02-12 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | Semiconductor material based on naphthalene diimide-vinylene-oligothiophene-vinylene polymer |
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