JP2001202027A - Drive substrate with color filter and method for manufacturing the same as well as liquid crystal display element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a drive substrate with color filters which is capable of forming the color filters having excellent surface smoothness and uniform and sufficient coloring density directly on a substrate having electronic circuit materials at high resolution by utilizing its driving voltage without depending upon the combinations of TFT drive substrates and the color filters. SOLUTION: This method for manufacturing the drive substrate with the color filters consists in forming colored electrodeposition films on the substrate having the electronic circuit materials and light transparent electrode parts connected to data wiring via the electronic circuit materials by bringing the substrate into contact with an aqueous electrolyte containing an electrodeposition material containing color materials and impressing the sum total energy of the energy supplied from the data wiring and the compensation energy different from this energy to the electrode parts to electrochemically deposit the electrodeposition material on the electrode parts. The form in which the compensation energy is the photovoltaic force obtained by irradiating the light transparent optical semiconductor layers disposed on the electrode parts with light is more preferable.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to various display devices such as a CCD camera and a liquid crystal display device, a driving device used for a color image sensor, a method of manufacturing the same, and a liquid crystal display device. )
The present invention relates to a method for directly forming a colored film (color filter) on a substrate provided with an electronic circuit material such as a liquid crystal display device, a driving element having the color filter, and a liquid crystal display element having the driving element.

[0002]

2. Description of the Related Art A liquid crystal display panel has a driving substrate on which driving elements such as thin film transistors (hereinafter sometimes referred to as "TFTs") and pixel electrodes are regularly arranged in a matrix, and a color filter and a filter on the surface. The mainstream is manufactured by aligning the filter-side substrate on which the common electrode is formed with each other via a spacer so as to face each other, and then enclosing and disposing the liquid crystal material in the gap formed by the spacer. ing.

When a color filter is formed in manufacturing the above filter substrate, a method of forming the color filter by repeating a photolithography method for each of red (R), green (G), and blue (B) is mainly used. . But,
In this method, a process of exposing a film to be patterned to an exposure mask using a predetermined pattern and further performing a development process, a cleaning process, and the like to pattern the film to be patterned must be repeated three times. Requires a lot of time. Further, since three types of exposure masks for patterning are required, the manufacturing cost of the filter-side substrate also increases. Further, if there is an error in the alignment accuracy between the exposure mask and the substrates on the driving side and the filter side, the arrangement position of the color filters is shifted, which causes a problem of lowering the display quality and the yield.

In order to solve the above-mentioned problem, in recent years, a technique has been proposed in which a color filter itself is directly formed integrally with the driving substrate. In order to form a color filter directly on the driving substrate, a method of forming a general pigment dispersion film by a photolithography method as described above (pigment dispersion method) has been proposed. However, when a photolithography method is used, The above problems have not been solved.

As another method, a method has been proposed in which a color filter film is formed directly on a driving element side corresponding to the driving side substrate by using an electrodeposition method. For example,
Japanese Patent Publication No. 3-45804 describes a technique of forming a colored layer directly on a transparent electrode as a driving electrode of a driving substrate having an active element by an electrodeposition method. The transparent electrodes (pixel electrodes) are integrated with the drain electrodes of the individual TFTs arranged in a matrix, and the potential (current) required for electrodeposition of the colored layer is determined by the transparent potential for forming the colored layer. It is obtained from the drive voltage when the TFT corresponding to the electrode is selectively driven. Therefore, in the electrolyte of each color,
By driving the TFT corresponding to each color, a colored layer of a desired hue is formed at a desired position. Further, JP-A-5-5874 and JP-A-7-72
No. 473 and Japanese Patent Application Laid-Open No. 9-288281 also disclose the same technology.

In the above-mentioned method, there is a description that an electrodeposition potential necessary for forming a colored film on a pixel electrode is obtained from a driving voltage of a TFT.
A voltage of 00V is required. On the other hand, since the withstand voltage performance of the TFT itself is about 20 V, a material capable of forming an electrodeposition film even under such a low voltage is extremely limited. In general, a smooth electrodeposition film is formed by a driving voltage of the TFT. It is practically impossible to form it stably. In addition, the present inventors,
An electrodeposition liquid composition capable of forming a colored film even when the electrodeposition potential is about 5 V has been proposed.
It is difficult to form a colored film on the pixel electrode only by using the driving voltage of T.

This is because a TFT as a driving element during electrodeposition is used.
When a voltage is applied to the pixel electrode through the TFT, the internal resistance of a semiconductor such as amorphous silicon (a-Si) or polysilicon (poly-Si) constituting the TFT, and an electrodeposition liquid that comes into contact with the pixel electrode This is because the resistance value of the (electrolyte solution) cannot be ignored. That is, when a voltage is applied to the pixel electrode via the TFT, an electrodeposition potential required for electrodeposition cannot be supplied to the pixel electrode. In particular, the internal resistance value of the amorphous silicon (a-Si) is about three orders of magnitude higher than that of polysilicon (poly-Si), and the potential required for electrodeposition cannot be secured only by the driving voltage of the TFT. The reason is considered as follows.

First, the above electrodeposition solution (electrolyte solution) used for electrodeposition
Using water as a solvent, a pigment dispersed in the water, a pigment dispersant, a water-soluble polymer substance as an electrodeposition film forming substance,
It is an electrochemically isotropic aqueous mixed solution prepared by mixing an aqueous solution with a supporting salt and the like, and has a resistance value of about several kΩ. Next, the voltage applied to the surface of the pixel electrode forming an interface with the electrolytic solution is modeled by taking the above-described a-Si and poly-Si of high internal resistance as examples, as shown in FIG. In the case of having a plurality of pixels, it can be described as follows.

That is, if the potential (applied voltage) applied to the pixel electrode is V _ITO , the resistance value of the electrolytic solution itself is R _lq , the internal resistance value of the TFT is R _ON , and the source voltage of the TFT is V _S ,
The applied voltage V _ITO can be represented by the following equation (1). V _ITO = (R _lq / (R _ON + R _lq )) × V _S (1) Here, it is assumed that the resistance R _lq of the electrolyte is 1 KΩ, and
Amorphous silicon thin film transistor (a-Si TF
T), the internal resistance R _ON of the a-Si TFT
Is approximately 1 MΩ, the above-mentioned V _ITO can be represented by the following equation (2). V _ITO = (1KΩ / (1MΩ + 1KΩ)) × V _S = (1/1001) × V _S (2) This is because the voltage applied to the pixel electrode is 1 / the source voltage.
1000 or less, meaning that almost no voltage is applied to the pixel electrode. That is, current is limited by the internal resistance value of the TFT, and the amount of electricity required for forming the colored electrodeposition film cannot be obtained.

On the other hand, a polysilicon thin film transistor (p
In the case where an (oli-Si TFT) is used, the above-mentioned a-Si TFT is used.
Its internal resistance is lower than that of a TFT (R _ON = 10
It is estimated that a practical level of applied voltage can be obtained by using a low potential electrodeposition material, but the internal resistance value is still large and the allowable range in which electrodeposition is possible is extremely large. It is considered narrow.

On the other hand, when a high voltage is applied to the transparent electrode, not only does it exceed the breakdown voltage range of the TFT itself, but also
This also promotes the electrolysis of water in the vicinity of the electrode, generating excessive protons (hydrogen ions) on the electrode surface, causing the dehydrogenation reaction to proceed rapidly, and generating oxygen generated by the dehydrogenation reaction as bubbles. This causes a so-called bubbling phenomenon. Then, the formed film may be peeled off on the bubble generating surface, and may become a non-smooth and defective film including voids (voids).

As described above, when a substrate provided with a driving element such as a TFT is used as an electrodeposition substrate, a sufficient electrodeposition potential actually required for film formation is obtained only by a driving voltage obtained by driving the TFT. It is impossible to supply (applied voltage) to the pixel electrode. Therefore, a method for stably forming a colored electrodeposition film (color filter film) having a smooth surface, a uniform color density, and a sufficient color density is required. At present, it has not been provided yet.

[0013]

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional problems and achieve the following objects. That is, the present invention relates to a thin film transistor (TF
T), using a driving voltage of the electronic circuit material, a color electrodeposition film having high resolution, excellent surface smoothness, and uniform and sufficient color density on a substrate provided with the electronic circuit material (T). It is an object of the present invention to provide a method of manufacturing a driving substrate with a color filter, which can form a color filter film. Further, the present invention is provided with a color filter which is inexpensive, has high resolution, is excellent in surface smoothness, and is uniform and has a sufficient coloring density without using a TFT drive substrate and a color filter which are separately manufactured. An object of the present invention is to provide a driving substrate with a color filter. Still another object of the present invention is to provide an inexpensive liquid crystal display device having a fine and high-resolution pixel pattern.

[0014]

Means for solving the above problems are as follows. That is, <1> a substrate having an electronic circuit material and a light-transmissive electrode portion connected to data wiring via the electronic circuit material on a light-transmissive substrate, and an electrodeposition material containing a coloring material. And contacting the electrode portion with an aqueous electrolyte solution, applying a total energy of an energy supplied from a data wiring and a compensation energy different from the energy to the electrode portion, and electrochemically deposits the electrode on the electrode portion. A method for manufacturing a driving substrate with a color filter, comprising forming a colored electrodeposition film by depositing a material.

<2> The color filter with the color filter according to <1>, wherein the compensation energy is a photoelectromotive force obtained by irradiating the light transmitting optical semiconductor layer provided on the light transmitting electrode with light. This is a method for manufacturing a drive substrate. The light-transmitting optical semiconductor layer is provided at least on an electrode portion of the substrate, and forms a colored electrodeposition film on the optical semiconductor layer.

<3> The method of manufacturing a driving substrate with a color filter according to <2>, wherein a photovoltaic force is generated only in a light-irradiated portion of the optical semiconductor layer on the electrode portion excluding a region having an electronic circuit material of the substrate. It is.

<4> The substrate is irradiated with light using the electronic circuit material as a mask from the side of the light-transmitting substrate where the optical semiconductor layer is not provided, and the photovoltaic is applied only to the light-irradiated portion of the optical semiconductor layer. <2> or <3>, wherein the drive substrate with a color filter is manufactured.

<5> The method according to <1>, wherein the compensation energy is supplied by a power supply line connected to the light-transmitting electrode and different from the data wiring.

<6> An electrode capable of supplying a drive current for liquid crystal display is further provided on the colored electrodeposition film.
> The method for manufacturing a driving substrate with a color filter according to any one of the above items. <7> The method for manufacturing a drive substrate with a color filter according to <6>, further including the step of electrically connecting the electrode and the light-transmitting electrode portion.

<8> The method according to any one of <1> to <7>, wherein the electrodeposition material contains a compound having a carboxyl group. <9> The compound having a carboxyl group is a polymer having a hydrophobic domain and a hydrophilic domain, and 50% or more of the number of the hydrophilic domains is changed from water-soluble to water-insoluble due to a change in pH, or vice versa. <8> The method for manufacturing a driving substrate with a color filter according to <8>, wherein the driving substrate is capable of changing reversibly.

<10> The acid value of the polymer is from 60 to 20.
<9> The method according to <9>, wherein the driving substrate is provided with a color filter. <11> The polymer as described in <9>, wherein the number of hydrophobic domains is 30 to 85% of the total number of hydrophobic domains and hydrophilic domains.
Or a method for manufacturing a drive substrate with a color filter according to <10>.

<12> The above-mentioned <9> to <9>, wherein the hydrophobic domain in the polymer is styrene or a styrene derivative.
11> The method for manufacturing a driving substrate with a color filter according to any one of the above items. <13> The number average molecular weight of the polymer is 6,000 to 250.
The method for manufacturing a drive substrate with a color filter according to any one of the items <9> to <12>, which is 00.

<14> The pH of the aqueous electrolyte is within a range of ± 1.5 of the pH at which the electrodeposition material starts to precipitate, and
The method according to any one of <1> to <13>, wherein the number is 5 or less.

<15> A plurality of thin film transistors regularly arranged on a light-transmitting substrate, a scanning wiring for commonly connecting a gate electrode layer of the thin film transistor, and a common connection of a source electrode layer of the thin film transistor A data line, a light-transmitting electrode portion connected to the drain electrode layer of the thin film transistor, a light-transmitting optical semiconductor layer provided on at least the light-transmitting electrode portion, and the light semiconductor layer. A driving substrate with a color filter, comprising: a colored electrodeposition film formed only on the upper surface; and an electrode provided on the colored electrodeposition film so as to be connected to the electrode portion.

<16> At least the drive substrate with a color filter according to the item <15>, a light-transmissive counter electrode substrate disposed to face the drive substrate with a color filter, and the drive substrate with a color filter And a liquid crystal material sealed between the substrate and a counter electrode substrate.

[0026]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In a method of manufacturing a driving substrate with a color filter according to the present invention, a thin film transistor (hereinafter referred to as a "TF") connected to a data wiring and a scanning wiring which are provided.
T ". ), And a substrate having at least an electrode portion connected to data wiring via the electronic circuit material is used as an electrodeposition substrate, and an electrodeposition potential (applied voltage) required for electrodeposition is applied to the electrode portion. The colored electrodeposition film is formed by applying the total energy of the energy supplied from the data wiring through the electronic circuit material and the compensation energy supplied from another supply source different from the energy. Hereinafter, the method of manufacturing the drive substrate with a color filter of the present invention will be described in detail, and through the description, the details of the drive substrate with a color filter of the present invention and a liquid crystal display device having the same will be clarified.

<Method of Manufacturing Drive Substrate with Color Filter>
The method of manufacturing a driving substrate with a color filter of the present invention includes, on a light-transmitting substrate, a substrate having an electronic circuit material and a light-transmitting electrode portion connected to data wiring via the electronic circuit material. A step of bringing into contact with an aqueous electrolyte solution containing an electrodeposition material containing a coloring material (hereinafter, sometimes referred to as a “contact step”), and energy supplied from the data wiring to the electrode unit via an electronic circuit material And applying a total energy of compensation energy different from the energy to electrochemically deposit the electrodeposition material on the electrode portion to form a colored electrodeposition film (hereinafter, this step is referred to as “ A colored electrodeposition film forming step ”), and, if necessary, a step of forming a black matrix (hereinafter, sometimes referred to as a“ black matrix forming step ”), heat treatment, and the like. Do Comprising a further step such as a film-forming process.

-Contacting step- In the contacting step, the data wiring and the scanning wiring, the electronic circuit material, and the optically transparent material connected to the data wiring via the electronic circuit material are formed on the light transmitting substrate. The substrate having the electrode portion is brought into contact with an aqueous electrolyte containing an electrodeposition material containing a coloring material (hereinafter, may be simply referred to as “electrolyte”). Details of the aqueous electrolyte, the substrate, and the like will be described later.

When the substrate is brought into contact with the aqueous electrolytic solution, any positional relationship of the substrate with respect to the aqueous electrolytic solution can be appropriately selected. For example, the entire substrate is immersed in the aqueous electrolytic solution. Alternatively, they may be arranged so that only a part of the substrate, for example, a region where a colored film is to be formed is in contact.

When contacting with an aqueous electrolyte, electrodes such as electronic circuit materials provided on the substrate are likely to be deteriorated when contacted with water and short-circuited when driving the TFT. Is preferred. However, if the electronic circuit material itself has been subjected to insulation treatment, it is not always necessary to separately perform the insulation treatment as described above.

As a method of the insulation treatment, a resin solution in which an ultraviolet curable resin is dissolved in an appropriate solvent is applied, only the optical semiconductor thin film portion is masked, and the entire surface is irradiated with an ultraviolet lamp to be cured. The method of dissolving and developing to dissolve and remove the resin solution on the unnecessary part, the surface of the negative photoresist solution is coated with a coating device such as a spinner, and after prebaking, the optical semiconductor thin film is exposed, and is decomposed with a solvent.
A method of developing and curing the non-exposed portion by host baking may be used. When performing the insulation treatment as described above,
A black matrix may be formed by including a black coloring material in an insulating material to be used and forming a black insulating film. In this case, examples of the black coloring material that can be used include carbon black and insulating pigments. However, since the portion where the electronic circuit material is arranged is light non-transmissive, the formation of the black matrix is optional.

—Colored Electrodeposition Film Forming Step— In the colored film formation step, as described above, the energy (first energy) supplied from the data wiring to the electrode portion of the substrate, that is, the color electrodeposition film is selectively applied. The total energy of the voltage (current) supplied to the electrode portion on which a film is to be formed and the compensation energy (second energy) different from the energy and supplied to the electrode portion by another means. By applying, the electrodeposited material is electrochemically deposited on the electrode portion to form a colored electrodeposited film having a desired hue. As described above, the colored electrodeposition film forming step is based on a film forming technique using an electrodeposition technique, and oxidizes water-soluble molecules,
It utilizes the principle of allowing movement between neutral and reduced states.

However, in order to form a colored electrodeposition film, it is necessary to apply a voltage (energy) higher than a certain threshold value, and even if a current simply flows, the film is not necessarily formed. Therefore, even if the voltage level obtained by driving the TFT is small by applying other energy that supplements the TFT driving voltage, a colored electrodeposition film having excellent film properties can be formed. In the formation of the colored electrodeposition film, the TF
The drive of T can be used for ON / OFF switching of electrodeposition.

That is, as described above, a solution (hereinafter, referred to as “aqueous electrolyte” or “electrolyte”) in which an electrodeposition material containing a pigment, a dye, or the like whose solubility greatly changes due to a change in liquid properties is dissolved and dispersed. Prepare an electrolyte tank containing
By driving the TFT on the driving substrate in a state where the driving substrate provided with the TFT is in contact with or dipped in the electrolytic solution in the tank, and applying compensation energy to the driving substrate, the electrodeposition material in the electrolytic solution is Is deposited on the substrate, and a monochromatic colored electrodeposition film (color filter) having a desired image pattern can be formed directly on the driving substrate. This is red, green,
By repeatedly using each of the blue electrolytes, a multi-color filter can be formed. Therefore, an arbitrary image pattern can be formed smoothly and at high resolution at a low cost without using a photolithography process and without using an exposure mask. Further, when a conductive electrodeposition material is used as the electrodeposition material in the electrolytic solution, a conductive color filter formed of a conductive color filter film can be formed.

In the present invention, as a method of forming a colored electrodeposition film by applying a voltage (total energy) above a certain threshold value to a substrate on which a colored electrodeposition film is to be formed, It is as follows. That is, on the substrate,
A data line and a scan line, an electronic circuit material arranged at the intersection, and an electrode portion connected to the data line via the electronic circuit material are provided, and a first energy (voltage) supplied from the data line is provided. ) Indicates that the scanning wiring (gate line) is O only in the electrode portion where the colored electrodeposition film is to be formed.
N is selectively applied through an electronic circuit material corresponding to the electrode portion when N is applied, and when the compensation energy is further applied to the electrode portion, the electrode portion to which the first energy from the data wiring is applied , The total energy was applied, and a colored electrodeposition film was formed only on this electrode portion. As described above, only the TFT driving voltage (voltage from the data wiring) when driving the electronic circuit material is:
Although it was difficult to form a color filter having excellent film properties, by supplying compensation energy through another means together with the TFT driving voltage, high resolution, excellent surface smoothness, and uniformity were obtained. A color filter (colored electrodeposition film) having a sufficient coloring density can be formed. In particular, when an amorphous silicon TFT or the like having a high internal resistance value is used, it is useful in that a decrease in electrodeposition potential (energy required for electrodeposition) supplied to the pixel electrode can be sufficiently compensated.

As described above, the first energy supplied from the data wiring has a function of selecting an electrode portion on which a colored electrodeposition film is to be formed (Addressing function), and selectively corresponds to the electrode portion. By driving the electronic circuit material, the first energy can be supplied only to a desired electrode portion. Therefore, the compensation energy, which is the second energy, does not need to be applied in the form of a pixel pattern, but may be applied to the entire substrate, and a region to be electrodeposited is simply selected to form a colored electrodeposition film. The required total energy can be applied to a desired area. Further, any of the first and second energies may be supplied first.

The compensation energy is energy supplied to the electrode portion by means different from the means via the electronic circuit material.
Either mode may be used and may be appropriately selected according to the purpose. For example, it may be energy supplied from the following means (first or second mode).

The first aspect is obtained by forming an optical semiconductor layer on an electrode portion provided on a substrate so as to cover at least the electrode portion, and irradiating the optical semiconductor layer with light. In this embodiment, photovoltaic power is supplied as compensation energy. The optical semiconductor layer is made of an optical semiconductor material described below, and has a property of generating a photoelectromotive force mainly by irradiation with ultraviolet rays.

In the present embodiment, the first energy is applied by selectively irradiating the optical semiconductor layer on the substrate with light while applying the first energy only to the desired electrode selectively from the data wiring as described above. The state where the total energy is applied to the surface of the optical semiconductor layer on the formed electrode is formed. The light irradiation may be performed from the surface on either side of the substrate. Here, the light irradiation does not need to be performed in a pattern, but may be performed on the entire substrate. Therefore, there is no need for an individual exposure mask corresponding to the hue, a device or control for imagewise exposure, and the like. Can be manufactured at low cost by using the apparatus configured as described above.

In addition, when the optical semiconductor layer is irradiated with light, as described above, the light may be irradiated from any side of the substrate regardless of the presence or absence of the TFT or the optical semiconductor layer. By irradiating the optical semiconductor layer with light through the electronic circuit material, that is, by irradiating the substrate with light using the electronic circuit material as a mask from the side of the light-transmitting substrate where the optical semiconductor layer is not provided, As shown in FIG. 8 and the like, it is possible to form a colored electrodeposition film of a certain size only in a region on the optical semiconductor layer 13 of the pixel electrode portion 11 where an image is actually displayed. That is, as shown in FIG.
After the formation of 4, when forming the driving electrode layer 15 as a current-carrying portion capable of supplying a driving current for liquid crystal display, it is not necessary to remove the colored electrodeposition film in an unnecessary portion, thereby further reducing the cost. Can be planned.

As the optical semiconductor material constituting the optical semiconductor layer, for example, Si, GaN, aC, BN, Si
C, ZnSe, titanium oxide (TiO, TiO ₂ ), Ga
As-based compounds, CuS, Zn ₃ P ₂ , phthalocyanine pigment-based materials, perylene pigment-based materials, azo pigment-based materials, various organic photoconductive materials, and the like, and those having a single-layer or multiple-layer structure can be used. . However, a high-purity substance or a single-crystal substance is required for the material, but a mixed substance or the like can also be used.

Among them, metal oxides such as TiO ₂ are excellent in stability at the time of electrodeposition and excellent in light irradiation efficiency, and thus are suitable for repeated use. Also, TiO
₂ sol - gel method, a sputtering method, when a film by an electron beam evaporation method, etc. Various methods, that good n-type optical semiconductor thin film is obtained has been clarified by recent studies. In order to increase the conversion efficiency of the photocurrent, a reduction treatment is effective. Usually, heating is performed at about 550 ° C. in hydrogen gas. For example, it can be achieved by heating at about 300 ° C. for 10 minutes while flowing a flow rate of 1 L (liter) per minute using a 3% hydrogen mixed nitrogen gas.

The optical semiconductor layer is formed by a conventionally known sol-gel method,
It can be formed on the conductive film by a sputtering method, an electron beam evaporation method, an ion coating method, a glow discharge deposition method, or the like.

The average particle diameter of the optical semiconductor material is as follows:
From the viewpoint of photovoltaic power, 10 nm to 2.5 μm is preferable. When the average particle diameter is less than 10 nm, the particles are too small, the light absorption efficiency is reduced, and the photovoltaic current with respect to the input light amount may be reduced.
In some cases, the optical semiconductor layer may be non-uniform, and the formed colored electrodeposition film may be non-uniform.

The thickness of the optical semiconductor layer is preferably from 0.04 to 3.0 μm from the viewpoint that good characteristics can be obtained.
When the layer thickness is less than 0.04 μm, the obtained photovoltaic power is too weak, which may cause a problem in forming a colored electrodeposition film. And the light hysteresis phenomenon becomes too large to cause a problem in the formation of the colored electrodeposition film.

The structure of the optical semiconductor layer is made of a single semiconductor, and is made of resin or the like from the viewpoint of easily obtaining the electric power necessary for forming the colored electrodeposition film in consideration of the power generation efficiency by light irradiation. It is necessary that no insulating material is mixed or contained. Insulating material such as resin is mixed in the optical semiconductor layer,
When it is contained, it also causes a large light hysteresis phenomenon.

As the optical semiconductor material, there are an n-type semiconductor and a p-type semiconductor. In the present invention, any of these semiconductors can be used. Further, by forming a laminated structure using a pn junction or a pin junction, As a result that more current flows and an electromotive force can be obtained with certainty, it is also advantageous in terms of improvement in contrast.

Next, a combination of an optical semiconductor and an electrodeposition material described later will be described. In the present invention, a Schottky barrier generated at an interface in contact with an optical semiconductor or a barrier of a pn junction or a pin junction is used to form a photoelectromotive force. FIG. 2 schematically shows a Schottky barrier generated at the interface between the n-type optical semiconductor and the electrodeposition liquid, and FIG. 3 schematically shows an energy band of the pin junction. For example, when an n-type optical semiconductor is used, when the n-type optical semiconductor side is made negative, current flows because the current flows in the forward direction, but conversely, when the n-type optical semiconductor side is made positive. In the method, a Schottky junction between the n-type optical semiconductor and the electrolyte forms a barrier, and no current flows. However, even in a state where the current does not flow with the n-type optical semiconductor side being positive, when light is irradiated, electron-hole pairs are generated from the n-type optical semiconductor thin film, the holes move to the solution side, and the current flows. In this case, the material to be electrodeposited must be an anionic molecule because the n-type optical semiconductor is brought to a positive potential. Therefore, a combination of an n-type optical semiconductor and an anionic molecule is formed, and conversely, a cation is electrodeposited in a p-type optical semiconductor. In particular, it is preferable to use a colored electrodeposition material containing a cationic molecule having an anionic molecule having a carboxyl group when using an n-type optical semiconductor and an amino group or an imino group when using a p-type semiconductor. .

The light source used for light irradiation may be any light in a wavelength range capable of generating a photovoltaic force with respect to the optical semiconductor thin film. Examples of the light source include a mercury lamp, a mercury xenon lamp, a high-pressure mercury lamp, a He-Cd laser, A conventionally known light source such as a gas laser, an excimer laser, a He-Ne laser, a semiconductor laser, and an infrared laser can be widely used, and among them, a high-pressure mercury lamp and a mercury xenon lamp that outputs DeepUV are preferable.

According to the second aspect, a power supply line different from the data wiring, which is connected to the electrode portion provided on the substrate, is provided, and another energy (current) is independently supplied as compensation energy from the electrode portion. It is. The power supply line may be provided by any method. For example, the power supply line may be provided to be connected to the pixel electrode on the side of the substrate constituting the substrate on which the TFT is formed, or may be provided on the opposite surface. It may be provided so as to be connected to the pixel electrode. In the case where the substrate is connected to the pixel electrode, an insulating layer may be further provided on the side of the substrate where the TFT is formed, and may be provided via the insulating layer. The power supply line may be configured to be connected to the pixel electrode only when the colored electrodeposition film of each color is formed, or may be configured to be disconnected and removed after the formation of the colored electrodeposition film. You may.

In the present embodiment, the first energy is supplied from the power supply line to the pixel electrode while the first energy is applied to only the desired electrode selectively from the data wiring as described above. A state is formed in which the total energy is applied to the surface of the optical semiconductor layer on the applied electrode. The other end of the power supply line connected to the pixel electrode is connected to an independent power supply, and desired energy is applied from the power supply.

The power supply lines include Cu, Ni, Cr,
It may be a wire made of a material such as Al, Mo, Ta, or the like, or may be a transparent electrode made of a material such as ITO.

The amount of energy supplied from the power supply line may be an amount that can secure the energy required for forming the colored electrodeposition film, but is preferably a voltage lower than the withstand voltage of the TFT.

As the compensation energy, the photovoltaic power obtained by the means of the first aspect is preferable in terms of simplification of the apparatus and cost reduction.

Next, a description will be given of a change in the pH of the electrolytic solution occurring near the substrate and the accompanying mechanism of the formation of the colored electrodeposition film. Generally, when donating soaked current or voltage a platinum electrode in an aqueous solution, OH in the aqueous solution in the anode vicinity ^- ions become O ₂ is consumed, pH is lowered by increasing the hydrogen ions. This is because the hole (p) and OH near the anode
^- because the less reactive the lead and the ions occurs. 2OH ⁻ + 2p ⁺ → 1/2 (O ₂ ) + H ₂ O However, in order for this reaction to occur, the potential of the substrate needs to exceed a certain value (threshold potential). The reaction proceeds only after exceeding the threshold potential, and the pH in the aqueous solution changes (the pH decreases near the anode and increases near the cathode). In the case of forming a colored electrodeposition film in the present invention, the above-described compensation energy is supplied while driving the TFT connected to the electrode portion, so that only the electrode portion connected to the selectively driven TFT has a threshold potential. And the above reaction proceeds only in the electrolytic solution near the electrode portion. As a result of the progress of the reaction, the pH of the electrolytic solution near the surface of the electrode portion changes, and accordingly, the solubility of the electrodeposition material changes and a colored electrodeposition film is formed.

Among the compensation energies, in the case of the embodiment using the photoelectromotive force obtained by using the optical semiconductor layer, a voltage higher than the threshold value can be applied only to the light irradiation portion, and The pH of the electrolyte near the surface changes,
The solubility of the electrodeposition material will be reduced. For example, when a TiO ₂ layer is formed as an optical semiconductor layer, the photovoltaic power of the TiO ₂ is about 0.6 V. Therefore, if the electrodeposition material is electrodeposited at 2.0 V, it is obtained by driving the TFT. TFT driving voltage (first energy: effective voltage of electrodeposition) is 1.7 V
, The potential of the light-irradiated portion of the substrate (optical semiconductor layer) is 0.6
V + 1.7 V = 2.3 V, which exceeds the threshold potential required for electrodeposition, and a colored electrodeposition film is formed only on the light irradiation part.

The pH value of the aqueous electrolytic solution before electrodeposition is within +2.5 from the pH value at which the state of the electrodeposition material used changes in the case of anodic electrodeposition, and the electrode value used in the case of cathodic electrodeposition. The pH is preferably set within a range of -2.5 from a pH value at which a change in the state of the material to be deposited occurs, and the pH is preferably 8.5 or less. That is, while the electrodeposited material shows sufficient solubility in the aqueous solvent used for the electrolytic solution, a change in the pH of the electrolytic solution from the dissolved or dispersed state to the formation of a supernatant and the precipitation causes the pH to fall within the range of 3.0. It is preferably within the range. More preferably, it is within 1.5.

If the pH value of the aqueous electrolyte is set in the above range, the dissolution of the electrodeposition material in the aqueous solvent becomes saturated before the colored electrodeposition film is formed. As a result, once the colored electrodeposition film is formed, it is difficult to redissolve in the aqueous electrolyte after the film is formed, and a stable and highly transparent colored electrodeposition film can be formed. On the other hand, at the time of forming the colored electrodeposition film, when the electrodeposition material is in an unsaturated state, that is, when the pH value of the electrolytic solution is not in the above range, the deposition rate is reduced, or Is formed, the film may be redissolved as soon as the supply of current or the like is stopped. In addition, p of electrolyte solution
To adjust the H value, an acidic or alkaline substance that does not affect the electrodeposition characteristics can be used.

Further, from the viewpoint of forming a sharp and sharp colored electrodeposition film at the edge portion, the temperature of the electrolytic solution used at the time of electrodeposition is maintained at a constant temperature, and the color electrodeposition is performed at a constant electrodeposition speed. Preferably, a film is formed.

In the electrolytic solution, in order to increase the electrodeposition speed,
In addition to the electrodeposition material, an ion dissociating salt which does not affect the electrodeposition properties may be added, and the addition of the salt increases the conductivity of the solution. The conductivity in the aqueous liquid is correlated with the electrodeposition speed (in other words, the amount of electrodeposition). The higher the conductivity, the thicker the electrodeposition film deposited in a certain period of time, and the higher the conductivity. Saturation is reached at about 100 mS / cm ² (corresponding to 10 Ω · cm). Therefore, ions that do not affect the formation of a colored electrodeposition film in the electrolyte, for example, Na ⁺ , NH ₄ ⁺ , C
_{^{l -, PO 4 -, SO}} 4 - be added to the like, it is possible to control the electrodeposition rate.

When adjusting the volume resistivity in the electrolytic solution by adding a salt, the volume resistivity is preferably from 10 ⁰ to 10 ⁵ [Ω · cm] from the viewpoint of favorably forming a film. preferable. The specific volume resistivity is less than 10 ⁰ Ω · cm, it may be impossible to control the film deposition quantity adsorbed, exceeding 10 ⁵ Ω · cm, a sufficient current can not be obtained, sufficient In some cases, it is not possible to obtain a colored film having a large deposition amount.

The thickness of the colored electrodeposition film is 0.3 to 4.0.
5 μm is preferable, and 0.6 to 1.9 μm is more preferable. When the film thickness is less than 0.4 μm, a smooth film cannot be formed, or a defect may occur in the film,
If it exceeds 4.5 μm, the film thickness controllability may be reduced.

The volume electric resistance value of the colored electrodeposition film is 1
0 ^-3 to 10 ¹² Ω · cm is preferable, and 10 ⁻¹ to 10 ⁵ Ω · cm is preferable.
cm is more preferred. The volume electric resistance value is 10 ⁻³ Ω ·
If it is less than 10 cm, it may not be possible to form a film stably during electrodeposition, and if it exceeds 10 ¹² Ω · cm, it may be difficult to control the film thickness, and it may be difficult to make the film thick. The volume electric resistance value can be adjusted by including a conductive material in the electrolytic solution as described later.

(Aqueous Electrolyte) Examples of the aqueous electrolyte include:
An aqueous electrolyte solution in which an electrodeposition material containing a coloring material is dispersed or dissolved in an aqueous solvent may be used, and may further contain other components such as a conductive material, a pH adjuster, and a salt, if necessary.

(Electrodeposition Material) As the electrodeposition material, at least an ionic molecule whose solubility changes in response to a pH change of a solution, a dye for coloring the electrodeposition film into a desired color,
Pigments, containing coloring materials such as pigments, if necessary,
It contains other components. Furthermore, a conductive material may be contained to form a conductive electrodeposition material, and the conductive material may be contained, or the conductive material may not be contained, and the conductive material may be used as the coloring material. It is also possible to use a coloring material.

The coloring material itself does not necessarily have to have an electrodeposition ability. When the ionic molecules are electrodeposited, the coloring material may be taken in, aggregated and precipitated to form a colored film or the like. Further, when the coloring material itself is an ionic molecule and has an electrodeposition ability, the electrodeposition material may be composed of only the coloring material. Here, it is particularly preferable to use an electrodeposition material containing a pigment and an ionic polymer as a coloring material, since the light resistance of the formed colored film can be improved. The ionic molecule may be an anionic molecule having an anion dissociable group or a cationic molecule having a cation dissociable group.

Which ionic molecule is to be selected as the electrodeposition material can be determined based on the change characteristic of the solubility corresponding to the change of the pH of the ionic molecule. The electrodeposition material used in the present invention depends on the pH change of the solution,
Those having the property of rapidly changing the solubility are preferred.
For example, it is preferable that the solution changes its state (dissolved state → precipitated or precipitated → dissolved state) in response to a pH change of ± 2.0 of the solution, more preferably, in response to a pH change of ± 1.0. If ionic molecules having such solubility characteristics are used as an electrodeposition material, an electrodeposition film can be produced more quickly, and an electrodeposition film having excellent water resistance due to strong cohesion can be produced. Further, the ionic molecules used as the electrodeposition material preferably exhibit hysteresis in a state change (dissolution state → change in precipitation and change in precipitation → dissolution state) corresponding to a change in pH. That is, the change to the precipitation state corresponding to the decrease or increase of the pH is steep, and the change to the dissolved state corresponding to the increase or decrease of the pH is slow, so that the stability of the colored film is improved, which is preferable. .

Examples of the ionic molecule include an anionic polymer compound having a carboxyl group or the like as an anionic dissociating group; and a cationic polymer compound having an amino group or an imino group as a cationic dissociating group. And the like. In the present invention, the ionic molecule used as the electrodeposition material is preferably a compound having a carboxy group, and the compound having a carboxyl group is preferably a polymer having a hydrophobic domain and a hydrophilic domain. Among the above polymers, a hydrophilic monomer having an ionic dissociating group (hydrophilic domain) and a hydrophobic monomer (hydrophobic domain)
Are preferred, among which block copolymers,
A random copolymer, a graft copolymer, or a mixture of a block copolymer and a graft copolymer or a random copolymer is more preferable. Further, from the viewpoint of improving the dispersibility of the coloring material, a block copolymer or a mixture of a block copolymer and a graft copolymer is most preferable.

When the hydrophobic monomer is represented by A and the hydrophilic monomer is represented by B, the block portion composed of the hydrophobic monomer A and The diblock copolymer represented by AAA-BBB and the triblock copolymer represented by BBB-AAA-BBB are particularly preferred. As the graft copolymer, BBBB is added to the polymer main chain represented by AAAAAAA.
A graft copolymer in which a plurality of side chains represented by BB are bonded is particularly preferred.

In this method, a pigment is mainly used as a coloring material. The hydrophobic block portion A functions as an adsorbing group for the hydrophobic pigment surface, and at the same time, the polymer chains are appropriately entangled on the pigment surface. It is considered that aggregation of the adjacent pigments can be prevented by covering with a polymer having an appropriate thickness. At this time, B
The hydrophilic block portion consisting of has an affinity for water as a solvent,
It acts to assist the dispersion stability of the pigment in the aqueous electrolyte. Therefore, the water-insoluble pigments are kept in a state of being stably dispersed without aggregating with each other.

Examples of the hydrophilic monomer having an anionic dissociation group as a hydrophilic domain include, for example, methacrylic acid, acrylic acid, hydroxyethyl methacrylate, acrylamide, maleic anhydride, trimellitic anhydride, phthalic anhydride, hemi-meritic acid Monomers having a carboxyl group such as acid, succinic acid, adipic acid, propiolic acid, propionic acid, fumaric acid, itaconic acid, crotonic acid, and derivatives thereof. Above all, methacrylic acid, acrylic acid, and derivatives thereof are preferable because ionic polymers using these as monomers have a sharp change in state due to a change in pH and a high hydrophilicity to an aqueous liquid.

Examples of the monomer having a cationic dissociating group include primary amines, secondary amines, tertiary amines,
Monomers having an amino group or an imino group, such as a secondary amine, oxazoline, alkylamine, alkylimine, polyamine, and polyimine. Further, the cationic polymer having a cationic dissociating group may be a polymer having a cationic dissociating group such as an amino group or an imino group introduced into the polymer. The hydrophilic monomer has 30 in its molecular structure.
Those containing an ion dissociable group in a proportion of about 75% by weight are preferred. Further, two or more hydrophilic monomers may be used in combination.

As the hydrophobic monomer (hydrophobic domain), a polymer material having an aromatic group such as an alkyl group, a phenyl group or a substituted phenyl group, a heterocyclic group, or a substituted or unsubstituted long-chain hydrocarbon group is preferred. A polymer material having an aromatic group including an alkyl group is more preferable, and a polymer material having a styrene structure or a substituted styrene structure as a hydrophobic domain is most preferable. For example, ethylene, olefins such as butadiene, styrene, α-methylstyrene, α
-Ethyl styrene, methyl methacrylate, ethyl methacrylate, butyl methacrylate, acrylonitrile, methyl acrylate, ethyl acrylate, butyl acrylate,
Lauryl methacrylate and the like, and derivatives thereof, phenylene derivatives, naphthalene derivatives and the like can be mentioned. Among them, styrene, α-methylstyrene and derivatives thereof are preferable in that they have high hydrophobicity and good electrodeposition deposition efficiency and high controllability at the time of copolymerization with a hydrophilic monomer. In addition, you may use a hydrophobic monomer in combination of 2 or more types.

When the ionic polymer is used together with the coloring material, the ionic polymer which can form a transparent electrodeposited film is preferable because it does not hinder the coloring of the coloring material. For example, a water-soluble acrylic resin is preferable. From the above, a styrene- (meth) acrylic copolymer is particularly preferable among the above ionic molecules from the viewpoint that the state change due to a pH change is steep and the hydrophilicity is high.

The ionic polymer must have an appropriate hydrophilicity from the viewpoint of the liquid stability of the electrolytic solution, while the ionic polymer must have an appropriate hydrophilicity from the viewpoint of the film strength and the water resistance of the electrodeposited film. ,
It is necessary to have appropriate hydrophobicity. The balance between hydrophobicity and hydrophilicity required for an ionic polymer used as an electrodeposition material can be represented by, for example, the number of hydrophobic domains and the number of hydrophilic domains of the monomer unit as described below. That is, when the ionic polymer is a copolymer of a hydrophobic monomer and a hydrophilic monomer, the number of hydrophobic domains with respect to the sum of the number of hydrophobic domains and the number of hydrophilic domains in the monomer unit is low potential. From the viewpoint that a strong polymer film can be formed, 30 to 85% is preferable, and 60 to 80% is more preferable. In particular, in the case of a copolymer composed of a hydrophobic domain having a styrene structure or a substituted styrene structure and a hydrophilic domain such as acrylic acid or a derivative thereof, the number of the hydrophobic domains is 55 to 85%. Is preferred. If the ratio of the number of the hydrophobic domains is less than 30%, a redissolved phenomenon of the deposited film is likely to occur, and the water resistance and the film strength of the electrodeposited film may be insufficient, and may exceed 85%. In addition, the affinity of the ionic polymer for the aqueous solvent is reduced, so that an appropriate amount cannot be dissolved, or precipitation occurs, or the viscosity of the electrolytic solution becomes too high to form a uniform electrodeposition film. is there. On the other hand, when the number of hydrophobic domains is in the above range, the affinity with the aqueous solvent is high, the liquidity of the electrolytic solution is stabilized, and the electrodeposition efficiency is high.

On the other hand, as the hydrophilic group, at least 50% of the number of the hydrophilic groups is a hydrophilic group which can be changed from water-soluble to water-insoluble or, conversely, reversibly changed by a change in pH. preferable. If the number of the hydrophilic groups is less than 50%, the solubility in water may be too low to be insoluble in water.

The balance between hydrophobicity and hydrophilicity of an ionic polymer can be indicated by an acid value when an anionic polymer is used. The acid value of the anionic polymer is preferably from 60 to 200, and more preferably from 70 to
130 is particularly preferred. If the acid value of the anionic polymer is less than 60, the affinity for the aqueous solvent is low, the anionic polymer is precipitated, and the viscosity of the electrolyte solution is too high, so that a uniform electrodeposition film is formed. May not be formed, and if it exceeds 200, the water resistance of the formed electrodeposition film may be reduced, and the electrodeposition efficiency may be reduced.

The molecular weight of the ionic molecule is 6.0 × 10 3 from the viewpoint of the film properties of the electrodeposited film.
^{3 to} 2.5 × 10 ⁴ is preferred, and 9.0 × 10 ^{3 to} 2.0
× 10 ⁴ is more preferred. The number average molecular weight is 6.0
If it is less than × 10 ³ , the film becomes non-uniform and the water resistance is reduced. As a result, cracks are generated in the electrodeposited film or the electrodeposited film is powdered to obtain an electrodeposited film having high robustness. If it exceeds 2.5 × 10 ⁴ , the affinity with the aqueous solvent may be reduced, and precipitation may occur, or the viscosity of the electrolytic solution may be too high, resulting in an uneven electrodeposition film.

When the ionic polymer has a glass transition point of 100 ° C. or less, a flow starting point of 180 ° C. or less, and a decomposition point of 150 ° C. or more, preferably 220 ° C. or more, the substrate will This is preferable since the electrodeposition film made of an ionic polymer formed on the substrate has good film properties, and is unlikely to be deteriorated by a subsequent film deposition or the like.

(Coloring Material) Examples of the coloring material include coloring materials such as dyes and pigments. Pigments are preferred from the viewpoints of light resistance and the ability to stably form a film having a uniform thickness. Examples of the pigment include general-purpose known pigments, such as azo pigments, phthalocyanine pigments, quinacridone pigments, perylene pigments, and anthraquinone pigments. The number average particle diameter of the pigment is preferably from 0.2 to 200 nm, more preferably from 40 to 60 nm. When the number average particle diameter is less than 0.2 nm, the cost during production is increased, and stable quality may not be obtained.
If it exceeds 0 nm, the hue is likely to shift and turbidity may occur.

When the electrodeposition material contains an ionic coloring material, examples of the ionic coloring material include triphenylmethanephthalide, phenosazine, phenothiazine, fluorescein, indolylphthalide, and the like. Spiropyran, azaphthalide, diphenylmethane, chromenopyrazole, leuco auramine, azomethine, rhodamine lactal, naphtholactam, triazene,
Examples include triazole azo, thiazole azo, azo, oxazine, thiazine, benzothiazole azo, and quinone imine dyes, and hydrophilic dyes having a carboxyl group, an amino group, or an imino group.

However, it is particularly preferable to use a pigment from the viewpoint that a film having a uniform thickness can be formed stably. Examples of the pigment include general-purpose known pigments, such as azo pigments, phthalocyanine pigments, quinacridone pigments, perylene pigments, and anthraquinone pigments.

(Conductive Material) It is also possible to form a conductive polymer film. In order to further improve the conductivity, it is preferable to include a conductive material in the aqueous electrolyte solution. Specifically, a conductive electrodeposition material containing a conductive material or a conductive coloring material can be used. Examples of the conductive material include a light-transmitting conductive material, a light-transmitting conductive polymer compound, a salt, and a conductive coloring material.

As the light transmitting conductive material, IT
Examples thereof include transparent conductive materials such as O and SnO ₂ , and mixtures thereof. Examples of the conductive coloring material include carbon black and the like in addition to the ionic coloring material.

Examples of the salt include salts that do not affect the electrodeposition properties, such as inorganic salts such as NaCl, KCl and NH ₄ Cl, and organic salts such as tetraethylammonium chloride and tetraethylammonium perchlorate. There are various combinations of salt types, and the cations include alkali metal ions, ammonium ions, and quaternary salts.
Examples of the anion include a halogen ion, a sulfate ion, a perchlorate ion, a nitrate ion, a sulfonate ion, BF ⁴⁻ , and PF ⁴⁻ . Among them, ions that are less susceptible to oxidation and reduction are preferred in terms of imparting conductivity, and further, in terms of solubility in water, halogen ions, nitrate ions, sulfate ions,
Ammonium salts and quaternary ammonium salts of sulfonic acid ions are more preferred. On the other hand, a thin film transistor (TF
From the viewpoint of not impairing the effect of the present invention of not adversely affecting T), it is better to avoid alkali metals.

The aqueous electrolyte solution is used by dissolving or dispersing the electrodeposition material in an aqueous solvent. The aqueous solvent is mainly composed of water and, if desired, contains alcohol or the like as long as the effects of the present invention are not impaired. It refers to a solvent to which other solvents having an affinity for water or various salts and additives are added. In the aqueous electrolyte solution, the content of the aqueous solvent (component weight ratio)
It is preferably 65 to 96% by weight based on the total weight of the aqueous electrolyte.

After the step of forming a colored electrodeposition film of each color or the step of forming a black matrix described later, the substrate may be subjected to liquid cleaning in order to remove the electrolytic solution adhered to the substrate and used in each step. . As a cleaning liquid to be used, a transparent and highly safe inert liquid is preferable. Further, it is more preferable to use a cleaning liquid that promotes solidification of the colored electrodeposition film because the film strength of the colored electrodeposition film is improved. As such a washing liquid, an aqueous liquid which is adjusted to a pH at which the electrodeposition material contained therein is more likely to precipitate than the pH value at which the electrolytic solution starts to be deposited is preferable. When the substrate on which the colored electrodeposition film is formed is washed with such a pH adjusting solution, the electrolytic solution and the like used in the previous step adhered to the substrate can be removed, and the film strength of the colored electrodeposition film can be improved. Can be. By such washing, for example, when an electrodeposition material having an anionic dissociation group such as carboxyl group is used, the pH value of the washing solution is lower than the pH value at the start of the deposition of the electrodeposition material, In the case of an electrodeposition material having a cationic dissociating group, the pH of the washing solution
By setting the value higher than the pH value at the start of the deposition of the electrodeposited material, the robustness of the electrodeposited film is improved, and as a result, a color filter with high resolution can be produced. In order to further enhance the cleaning effect of the cleaning liquid and the effect of hardening the film, the pH value should be set to a value that is 1.0 to 2.5 less than the pH value at which the aqueous electrolyte solution starts to precipitate. preferable.

-Hardening step- From the viewpoint of improving the film strength and solvent resistance of the formed film, after the colored electrodeposition film forming step and the black matrix forming step described below, the formed polymer film is irradiated with light. And a hardening step of heating or the like may be provided. In this case, a radical generator or an acid generator can be contained in the aqueous electrodeposition solution. Among them, a heat-reactive one is preferable because a radical or an acid can be uniformly generated in the film.

This hardening step may be provided sequentially after forming the colored electrodeposition films of the respective colors, may be provided after forming the three color RGB electrodeposition films, or may be provided after the black matrix is provided. They may be provided collectively. However, from the viewpoint of sufficiently improving the film properties of each film, it is preferable to sequentially perform the hardening step after forming the colored electrodeposition film of each color. When the black matrix is provided first by the photoelectric deposition method, the black matrix may be provided only after the black matrix is formed.

Examples of the heating method for heating the film include a method in which the film is heated in an oven, a vacuum heater or the like adjusted to a desired temperature, a method in which a heating gas is sprayed on the surface, and the like. The heating temperature is preferably from 50 to 250 ° C, more preferably from 90 to 200 ° C.

In the method of manufacturing a driving substrate with a color filter according to the present invention, a colored electrodeposition film (color filter) is formed on the electrode portion or the optical semiconductor layer provided on the electrode portion as described above. Thereafter, since the colored electrodeposition film is generally a non-conductive film, a driving current for liquid crystal display is formed on the colored electrodeposition film from the viewpoint of not hindering the driving of the liquid crystal material disposed on the color filter. (Supply path) that can supply air
It is preferable to have a step of forming This electrode is
Electric current is applied to the light-transmitting electrode portion through a through hole or the like, and a TFT drive voltage is applied to the electrode.

As the material for forming the current path portion, the same material as that usable for forming the electrode portion can be used, and can be formed by a known method such as a photolithography method and an etching method. . The thickness of the current path is preferably 0.01 to 1000 μm.

-Substrate-As a substrate, a data wiring and a scanning wiring, an electronic circuit material located at an intersection thereof, and an optical circuit connected to the data wiring via the electronic circuit material are formed on a light-transmitting substrate. A substrate having a transmissive electrode portion may be used, and if necessary, another layer such as an optical semiconductor layer or an insulating layer may be provided. The data wiring is a source line commonly connected to a source electrode (source electrode layer) of an electronic circuit material, and a light transmitting electrode portion (pixel electrode) by arbitrarily controlling a voltage applied from the source line to the source electrode. ) Can control the voltage to. The scanning wiring is a gate line for commonly connecting a gate electrode (gate electrode layer) of an electronic circuit material, and the on / off of a voltage from the scanning wiring controls whether or not a driving voltage is applied to a TFT. I do. That is, when a voltage is applied from the scanning wiring, a current flows between the source electrode and the drain electrode. In the present invention, a substrate having the optical semiconductor layer is particularly preferable.

The configuration of the substrate is not particularly limited. For example, the substrate may be configured as shown in FIG. 7B. That is, on the glass substrate 31,
A gate electrode layer 2 and a glass substrate 3 on the gate electrode layer 2
A gate insulating layer 3 formed over substantially the entire surface of
A channel layer 4 made of a semiconductor such as a-Si, formed on the gate insulating layer 3, a channel protective layer 5 formed on the channel layer 4, and an electrode portion on which a colored electrodeposition film is to be formed The drain electrode layer 6 connected to the source electrode layer 7
And a thin film transistor 1 in which a wiring electrode layer 9 connected to each of the drain electrode layer 6 and the source electrode layer 7 is connected. The gate electrode layer 2 is connected to the main substrate A (see FIG. 4). The source electrode layer 7 is connected to the wiring 2a, and is connected to the data wiring 9a, which is arranged to cross the scanning wiring 2a.

The scanning wiring 2a and the data wiring 9a are
The entire length excluding those terminal portions is covered with a passivation layer 10. The thin film transistor 1 also has a wiring electrode layer 9 connected to the drain electrode layer 6 and a pixel electrode 12.
The entire area except for the connection portion with is covered with the passivation layer 10. Further, a pixel electrode 12 serving as an electrode portion is formed so as to be connected to the wiring electrode layer 9 connected to the drain electrode layer 6 and to be exposed on the surface of the passivation layer 10, and further to cover the electrode portion. The optical semiconductor layer 13 is formed over the entire area of the passivation layer 10. In this case, a colored electrodeposition film is formed on the optical semiconductor layer 13.

Further, the substrate may be configured such that an electrode portion serving as a pixel electrode and an optical semiconductor layer are first provided on a glass substrate, and then a thin film transistor as an electronic circuit material is provided. Good. In this case, the manufacturing process can be further simplified, and an inexpensive and highly accurate color filter can be formed.

The data wirings and the scanning wirings are formed on a base constituting a substrate by, for example, a common electrode connected to a display portion (pixel) composed of an electronic circuit material and a pixel electrode, which is wired in a matrix shape so as to cross each other. In this case, a current supply state to each pixel is selectively set by the scanning wiring, and an applied voltage is arbitrarily controlled by the data wiring to selectively drive a desired electronic circuit material. The data wiring and the scanning wiring are made of Al, Cu, Cr, Ni, Mo, Ta, or the like.

(Electronic Circuit Material) The electronic circuit material includes, for example, a gate electrode layer connected to a scanning line, a source electrode layer connected to a data line, a channel layer made of a semiconductor,
A drain electrode layer connected to the source electrode layer through the channel layer, a wiring electrode layer respectively connected to the drain or source electrode layer, an insulating layer, a protective layer, and the like are combined and joined to the light-transmitting conductive film. Means an active element that performs a switching function when the color film is formed by electrodeposition, for example, a thin film transistor (TFT). The specific configuration of the electronic circuit material is not particularly limited, and can be appropriately selected from thin film transistors of a forward stagger type, an inverse stagger type, a planar type, and the like according to the purpose. For example, the thin film transistor 1 in FIG. (Inside).

As the semiconductor, amorphous silicon (a-Si), polysilicon (poly-Si), G
Examples thereof include an a-based compound and the like, and a mixture of these may be used, or a plurality of optical semiconductor thin films made of each material may be laminated.

The source electrode layer and the drain electrode layer are
Generally, it is made of aluminum, molybdenum, copper, tantalum, or the like, and the gate electrode layer is generally made of chromium, aluminum, molybdenum, or the like. Examples of the insulating layer include a silicon oxide (SiO ₂ ) film and silicon nitride (SiN _x ).

(Electrode part) The electrode part has conductivity,
In addition, as long as it is a light-transmitting material, it can be formed from widely known materials. For example, Al, Zn, Cu, Fe, Ni, Cr,
Metals such as Mo, ITO (indium-tin oxide),
And metal oxides such as tin dioxide. Alternatively, a conductive carbon material, a conductive ceramic material, or the like can be used. The electrode portion can be formed by a conventionally known method such as a vapor deposition method, a sputtering method, and a CVD method. The thickness of the electrode portion is preferably from 100 to 3 μm, more preferably from 300 to 3000 °.

(Substrate) As the substrate, a light-transmitting material is used from the viewpoint of use as a color filter. For example, glass, plastic, and the like are preferably mentioned.

-Black Matrix Forming Step-In the present invention, a black matrix forming step may be provided. In the black matrix forming step,
By the same photoelectric deposition process as the above-described colored electrodeposition film forming step, a black colored film, that is, a black matrix may be formed using an aqueous electrolyte containing a black coloring material, or as an aqueous electrolyte. Alternatively, a metal plating thin film may be formed using an aqueous electrolyte containing an electrodeposition material containing a metal.
Alternatively, photolithography can be used.

Also, on the colored electrodeposition film formed on the substrate,
A solution of an ultraviolet curable resin containing a black coloring material such as black carbon powder is applied, or the substrate on which the colored film is formed is brought into contact with the solution, and the resin thin film containing the black coloring material is irradiated with ultraviolet rays. By forming the black matrix, a black matrix may be formed.

As described above, the high light-shielding ability of the metal thin film and the high light absorption of the black pigment-dispersed resin-based thin film
Further, in order to form a black matrix layer satisfying further thinning, a black matrix layer having a layer structure in which a metal thin film and a black pigment-dispersed resin-based thin film are combined (laminated) can be formed. The black matrix forming step may be provided before the colored film forming step or may be provided after the colored film forming step.

Further, as shown in FIG. 4, the black matrix may be formed not on the drive substrate on which the electronic circuit material or the colored electrodeposition film is formed but on the counter electrode substrate.

The function of the black matrix layer is as follows.
Both light shielding properties and light reflection preventing properties are required. If the black matrix layer is not obtained as a thin film, it becomes difficult to form a fine pattern of the black matrix layer. That is, by forming a thin film having two functions such as high light transmissivity and absorption of incident light without reflection, high characteristics are exhibited.

As described above, using the substrate provided with the electronic circuit material and applying the total energy obtained by adding the compensation energy to the energy (TFT driving voltage) supplied from the data wiring and obtained by driving the TFT. As a result, a colored electrodeposition film (color filter film) having high resolution, excellent surface smoothness, uniform and sufficient coloring density can be formed at low cost, and a TFT drive substrate and a color filter separately manufactured There is no combination of In addition, as the compensation energy, light is irradiated in a state where the electronic circuit material is located between the light source and the optical semiconductor layer, and the photoelectromotive force generated only in the light irradiated portion of the optical semiconductor layer is used, so that the photolithography method and the exposure can be performed. A drive substrate having a color filter can be manufactured more easily and inexpensively without employing a mask.

<Driving Substrate with Color Filter> In the driving substrate with color filter of the present invention, a plurality of thin film transistors regularly arranged on a light-transmitting substrate and a gate electrode layer of the thin film transistor are commonly connected. A scanning wiring, a data wiring commonly connecting a source electrode layer of the thin film transistor, a light-transmitting electrode portion connected to a drain electrode layer of the thin-film transistor, and at least provided on the light-transmitting electrode portion. Further, a light-transmitting optical semiconductor layer having a photovoltaic function, a colored electrodeposition film formed only on the optical semiconductor layer, and provided on the colored electrodeposition film so as to be connected to the electrode portion. And an electrode (driving electrode layer), and can be obtained by the method for producing a driving substrate with a color filter of the present invention.

The structure is such that an electrode portion connected to a thin film transistor, an optical semiconductor layer provided at least over the electrode portion, and an optical semiconductor layer in a region on a substrate where the thin film transistor is not provided are provided. An electrode (drive electrode) connected to the electrode portion as a conductive path portion for supplying a drive current for liquid crystal display so as to cover the colored electrodeposition film formed only ) Are stacked on the base in this order, and the mode can be appropriately selected according to the purpose without any particular limitation. For example, even if the configuration is as shown in FIG. 9 or FIG. Good.

<Liquid Crystal Display Element> The liquid crystal display element of the present invention comprises at least the above-described drive substrate with a color filter of the present invention and a light-transmissive counter electrode substrate arranged to face the drive substrate with a color filter. And a liquid crystal material sealed between the driving substrate with a color filter and the counter electrode substrate. If necessary, an alignment film, a black matrix layer, and the like can be provided.

The alignment film has a function of defining the alignment direction of the liquid crystal compound in the liquid crystal phase, and can be formed of a polymer such as polyimide, polyvinyl alcohol, or gelatin. Is preferably subjected to an orientation treatment such as a rubbing treatment. In addition, the alignment film can be provided on the surface of the drive substrate with a color filter and the counter electrode substrate that are in contact with the liquid crystal material. Further, the black matrix layer can be formed in the same manner as described above.

The counter electrode substrate has at least an electrode layer on a light-transmitting substrate and, if necessary, other layers such as a black matrix layer and an alignment film.
The electrode layer can be formed by a similar method using a material similar to a material usable for forming the electrode portion, such as a metal or a metal oxide such as ITO. The same applies to the black matrix layer and the alignment film.

The configuration of the liquid crystal display element is slightly different depending on the aspect of the driving substrate with a color filter of the present invention described above, but other than that, there is no particular limitation, and it can be arbitrarily configured. For example, it may be configured in the mode shown in FIG. That is, the alignment film 16 is further formed on the surface of the driving substrate with color filters (main substrate A) of the present invention prepared as described above on which the colored electrodeposition film is formed. The liquid crystal material C
Are disposed so as to sandwich the same.

In the counter electrode substrate B, a black matrix layer 20 is formed on a glass substrate 21 except for a portion corresponding to the drive electrode layer 15 of the main substrate A, and further covers the black matrix layer 20. Glass substrate 21
A counter electrode layer 19 is formed on the entire upper surface as a single electrode. Further, an alignment film 18 is stacked on the counter electrode layer 19. In this case, it is not necessary to provide a black matrix layer on the side of the main substrate A, which is a driving substrate with a color filter.

The drive substrate with color filters (main substrate A) and the counter electrode substrate B are fixed by forming a space (gap) of a predetermined width through a spacer such as a resin ball, for example. By sealing after injecting the material, the liquid crystal display device of the present invention can be manufactured.
The liquid crystal material can be appropriately selected from known materials according to the purpose.

As described above, by providing the driving substrate with a color filter of the present invention, a liquid crystal display device having a fine and high-resolution pixel pattern can be manufactured at lower cost.

[0118]

EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples. still,
All “%” in the examples represent “% by weight”. (Embodiment 1) A frame-shaped sealing material (not shown) is used to connect the main substrate A and the counter electrode substrate B which is paired with the main substrate A as follows.
Then, an active matrix liquid crystal display device having a cross-sectional structure similar to that of FIG. 4 was formed, in which liquid crystal C was sealed between the substrates A and B. As shown in FIG. 5, the main substrate A of the active matrix liquid crystal display element has a data wiring 9a and a scanning wiring 2a intersecting each other on a transparent insulating material 31 such as glass. A plurality of display units (pixels) each including a pixel electrode unit 11 connected to the thin film transistor 1 are regularly arranged in a matrix.
1 is provided with a color filter 14. FIG. 4 is a sectional view showing an example of the liquid crystal display device of the present invention in which the thin film transistor 1 is used as an active device. FIG.
FIG. 5 is a plan view showing a part of a main substrate A in FIG. 4.

-Main Substrate A- As shown in FIG. 6A, a transparent glass substrate 31 serving as a substrate constituting the main substrate A is prepared.
On top, an inverted staggered thin film transistor 1 and a scanning line 2
a, the data wiring 9a was collectively formed according to the following procedure. The thin film transistor 1 has an inverted staggered structure, and has a tantalum (T
a) and the like, a transparent gate insulating layer 3 made of silicon nitride (SiN _x ) and the like formed over the entire surface of the main substrate A on the gate electrode layer 2, and the gate insulating layer 3 A channel layer 4 made of amorphous silicon (a-Si) or the like formed thereon, a channel protection layer 5 made of silicon nitride (SiN _x ) or the like formed on the channel layer 4, an impurity such as phosphorus (donor ), A drain electrode layer 6 made of n ⁺ type amorphous silicon (a-Si) or the like, and a source electrode layer 7.

As shown in FIG. 5, the gate electrode layer 2 is connected to the scanning wiring 2a wired on the main substrate A, and the source electrode layer 7 is connected to the data wiring wired crossing the scanning wiring 2a. 9a. Further, the data wiring 9a has a silicon nitride (Si)
N _x) is covered with a passivation layer 10 composed of such, also, the thin film transistor 1 is also the entire region except for the connection end and its drain electrode layer 6 and the pixel electrode 12 and the driving electrode layer 15, the passivation layer 10 Covered with.

Next, as shown in FIG. 7B, after forming a contact hole in the passivation layer 10 on the wiring electrode 9 connected to the drain electrode layer 6 of the thin film transistor 1, a 100 nm I.P.
A film of TO was formed, and the pixel electrode 12 for photoelectric deposition was formed by general photolithography and an etching method (wet or dry). Thereafter, a titanium oxide (TiO ₂ ) film having a thickness of 150 nm is formed by a high frequency sputtering method, and the film is formed at 280 ° C. in a nitrogen atmosphere containing 3% hydrogen.
The titanium oxide (TiO ₂ ) film was subjected to a reduction treatment for 20 minutes to form the optical semiconductor layer 13, thereby obtaining a main substrate A as a driving substrate.

Next, the main substrate A obtained above was placed in a photoelectric deposition apparatus (not shown) such that the optical semiconductor layer of the main substrate A was in contact with the aqueous electrolyte. This photoelectric deposition apparatus is configured such that the surface of the optical semiconductor layer 13 of the main substrate A is brought into contact with an aqueous electrolyte containing an electrodeposition material containing a fine particle pigment, and the optical semiconductor layer 13 of the main substrate A is contacted. And a mechanism for irradiating ultraviolet light having a wavelength of 365 nm from the surface of the glass substrate on which the thin film transistor 1 and the like are not provided.
Further, the photoelectric deposition apparatus selectively connects a power supply terminal of the scanning wiring 2a and the data wiring 9a formed in advance on the main substrate A to a driving circuit, thereby selectively selecting a desired thin film transistor 1 through the scanning wiring 2a. And a mechanism that can arbitrarily control the surface potential of the optical semiconductor layer 13 on the pixel electrode 12 of each display unit via the data wiring 9a. The optical semiconductor layer 1 at this time
The surface potential of No. 3 is a potential based on the optoelectrodeposition electrode disposed in the electrophode device via the aqueous electrolyte.

The main substrate A is attached to the photoelectric wearing apparatus having the above mechanism.
Was arranged, and a red color filter was formed as shown in FIG. 8C as follows. As the aqueous electrolyte, a copolymer of styrene-acrylic acid-acrylate (number average molecular weight 16,000, molar ratio of hydrophobic group / (hydrophilic group + hydrophobic group) 70%, acid value 120) and anthraquinone red fine particle pigment And the solid content concentration of 5.
0% aqueous electrolyte solution for red (pH
7.9, volume resistivity 2 × 10Ω · cm), and the optical semiconductor layer 13 of the main substrate A was brought into contact with the aqueous electrolyte.

In this state, the surface potential of the optical semiconductor layer 13 of the display section (pixel) in which a red color filter is to be formed is set to 1. by the drive circuit connected to the power supply terminals of the scanning wiring 2a and the data wiring 9a. While maintaining the voltage at 7 V, ultraviolet light having a wavelength of 365 nm and an intensity of 50 mW / cm ² was irradiated for 10 seconds from the surface of the glass substrate 31 on the side where the optical semiconductor layer 13 and the thin film transistor 1 were not provided. A 2 μm red colored electrodeposition film (red color filter film) 14 could be formed. Upon irradiation with the ultraviolet light, the gate electrode layer 2, the drain electrode layer 6, the source electrode layer 7, and the wiring electrode 9 constituting the thin film transistor 1.
In the region where is disposed, the ultraviolet light is blocked, and no red color filter is formed in the region of the optical semiconductor layer on the thin film transistor 1, and as shown in FIG. A color filter of a predetermined size was formed only on the optical semiconductor layer in a substantially displayable region of the pixel electrode portion 11 (see FIG. 5). Thereafter, the main substrate A is taken out of the photoelectric deposition apparatus, washed with a pH adjusting solution having a pH value of 6.5, and provided with a red color filter having high resolution, excellent surface smoothness, and uniform density. Obtained. The optical transmission density of the formed red color filter was 1.2.

In the same manner as described above, a green aqueous electrolyte was prepared in the same manner as described above except that a phthalocyanine green ultrafine pigment was used in place of the red fine pigment in the aqueous electrolyte. In the same manner as in the case of the color filter described above, the film thickness of 1. is formed on the optical semiconductor layer of the display portion (pixel) of the main substrate A where the red color filter is not formed.
A 2 μm green colored electrodeposition film (green color filter film) is formed, and unnecessary aqueous electrodeposition liquid adhering to the main substrate A is washed away using cleaning water having a pH of 6.2, so that the surface is provided with high resolution. A green color filter having excellent smoothness and uniform density was formed. The formed green color filter is
As shown in FIG. 8C, a predetermined size is formed only on the optical semiconductor layer in a substantially displayable region of the pixel electrode portion 11 (see FIG. 5) with the end portion of the wiring electrode 9 as a boundary. The transmission density was 1.2.

In the same manner, an aqueous electrolyte solution for blue was prepared in the same manner as described above, except that an ultrafine pigment of phthalocyanine blue was used instead of the red fine particle pigment in the aqueous electrolyte solution for red. In the same manner as in the case of the red color filter described above, a 1.0 μm-thick blue color is formed on the optical semiconductor layer of the display portion (pixel) on which the red and green color filters of the main substrate A are not formed. An electrodeposition film (blue color filter film) is formed, and unnecessary aqueous electrodeposition liquid attached to the main substrate A is removed by washing using a washing water having a pH value of 6.0, and high resolution and excellent surface smoothness are obtained. A blue color filter having a uniform density was formed. The formed blue color filter is formed only on the optical semiconductor layer in a substantially displayable region of the pixel electrode portion 11 (see FIG. 5) with the end of the wiring electrode 9 as a boundary as shown in FIG. 8C. It was formed in a certain size, and its optical transmission density was 1.1.

Next, the red, green and blue color filters formed on the main substrate A were subjected to a heat treatment at 230 ° C. for 30 minutes to cure the color filter films of the respective colors. Thereafter, the optical semiconductor layer 1 existing outside the region where the three color filters are formed is formed by ordinary photolithography and etching (wet or dry).
3 is removed, and an ITO film having a thickness of 100 nm is formed on the removed portion by a magnetron sputtering method. Then, by a general photolithography and an etching method (wet or dry), as shown in FIG. The ITO film 12 is used as an energizing path for supplying a driving current for liquid crystal display.
To form a driving electrode layer 15. Thereafter, an alignment film 16 made of polyimide was further formed by lamination, thereby producing a drive substrate with a color filter of the present invention.

Note that, instead of the inverted staggered thin film transistor 1 formed on the main substrate A, a forward staggered type or planar type thin film transistor may be used, and the semiconductor layer of the channel layer 4 of the thin film transistor 1 may have many layers. Crystalline silicon (polysilicon; poly-Si) may be used, and a driving substrate with a color filter of the present invention was manufactured in the same manner as described above.

-Liquid crystal display element- As shown in FIG. 4, another transparent insulating material 21 such as a glass substrate is prepared, and the glass substrate 21 is formed on the main substrate A so as to correspond to the drive electrode layer 15. After the black matrix layer 20 made of chromium (Cr) or the like is formed except for the portion, the counter electrode layer 1 made of ITO or the like is formed as a single electrode over the entire surface of the glass substrate 21.
9 was formed, and an alignment film 18 made of polyimide was further laminated on the counter electrode layer 19 to obtain a counter electrode substrate B.

The counter electrode layer 19 of the obtained counter electrode substrate B
And the surface of the driving substrate with color filters on the side where the color filters are provided is disposed via resin ball spacers so as to face each other to form a space (gap) having a predetermined width. Fixed. After injecting a nematic liquid crystal material into the space, the space was closed, and a liquid crystal display device of the present invention was obtained.

As described above, a colored electrodeposition film (color filter film) can be formed directly on a substrate having an electronic circuit material, and a driving substrate having a color filter can be formed at a low cost by a simple process without using an exposure mask. Could be produced. The color filter on the drive substrate had high resolution, excellent surface smoothness, and had a uniform and sufficient coloring density. Also,
Without combining a separately manufactured TFT driving substrate and a color filter, a driving substrate with a color filter provided with a color filter having high resolution, excellent surface smoothness, and uniform and sufficient coloring density; A liquid crystal display device having a pixel pattern with high resolution could be obtained at lower cost.

Example 2 In the process shown in FIGS. 6 to 8, three colored (red, green, blue) colored electrodeposition films (color filter films) were formed on the optical semiconductor layer 13 in the same manner as in Example 1. ) Formed. As shown in FIG. 8C, the formed color filters of the respective colors are separated from the pixel electrode portion 1 by the end of the wiring electrode 9 as a boundary.
1 (see FIG. 5) was formed in a certain size only on the optical semiconductor layer in a substantially displayable region, and its optical transmission density was the same as in Example 1.

Next, as shown in FIG. 10, the drain electrode layer 6 of the thin film transistor 1 in the optical semiconductor layer 13 is formed.
A contact hole was opened only in the upper portion by ordinary photolithography and etching (wet or dry). Thereafter, an ITO film having a thickness of 100 nm is formed by magnetron sputtering, and is connected to the pixel electrode 12 connected to the drain electrode layer 6 by general photolithography and etching (wet or dry) to form a driving electrode layer. No. 15 was formed. Finally, an alignment film 16 made of polyimide was laminated to form a drive substrate with a color filter of the present invention.

As in the first embodiment, instead of the inverted staggered thin film transistor 1 formed on the main substrate A, a forward staggered or planar thin film transistor may be used.
The semiconductor layer of the channel layer 4 of the thin film transistor 1 is made of polycrystalline silicon (polysilicon; poly-Si).
May be used, and a drive substrate with a color filter of the present invention was produced in the same manner as described above.

-Liquid crystal display element- Using the counter electrode substrate B manufactured in Example 1, the surface of the counter electrode layer 19 of the counter electrode substrate B and the color filter of the driving substrate with a color filter obtained above are provided. A resin ball spacer was disposed so as to face the surface on the opposite side, and a space (gap) having a predetermined width was formed and fixed. After injecting a nematic liquid crystal material into the space, the space was closed, and a liquid crystal display device of the present invention was obtained.

As in the case of Example 1, a drive substrate having a color filter could be manufactured in a simple process at low cost without using an exposure mask. The color filter on the drive substrate had high resolution, excellent surface smoothness, and had a uniform and sufficient coloring density. Also, a separately manufactured TF
Without combining a T drive substrate and a color filter, a drive substrate with a color filter provided with a color filter having high resolution, excellent surface smoothness, and uniform and sufficient coloring density, and a fine and high resolution pixel pattern A liquid crystal display device having the same can be obtained at lower cost.

Example 3 The titanium oxide (Ti
In forming the optical semiconductor layer 13 made of O ₂ ), a low-temperature-curable coating material (Bistrate L, manufactured by Nippon Soda Co., Ltd.) is used instead of the TiO ₂ film forming method using the high frequency sputtering method. Coated with Ti
A method similar to that of Example 1 was adopted except that an O ₂ film was formed, and a reduction treatment was performed at 280 ° C. for 20 minutes in a nitrogen atmosphere containing 3% hydrogen to volatilize a solvent in the coating material. The drive substrate with a color filter of the present invention was manufactured. In addition, as a coating method, a film could be similarly formed by a dip coating method or a spray coating method instead of the spin coating method.

As in the first embodiment, instead of the inverted staggered thin film transistor 1 formed on the main substrate A, a forward staggered or planar thin film transistor may be used.
The semiconductor layer of the channel layer 4 of the thin film transistor 1 is made of polycrystalline silicon (polysilicon; poly-Si).
May be used, and a drive substrate with a color filter of the present invention was produced in the same manner as described above.

-Liquid crystal display element- Using the counter electrode substrate B manufactured in Example 1, the surface of the counter electrode layer 19 of the counter electrode substrate B and the color filter of the driving substrate with a color filter obtained above are provided. A resin ball spacer was disposed so as to face the surface on the opposite side, and a space (gap) having a predetermined width was formed and fixed. After injecting a nematic liquid crystal material into the space, the space was closed, and a liquid crystal display device of the present invention was obtained.

As in the case of Example 1, a drive substrate having a color filter could be manufactured in a simple process at low cost without using an exposure mask. The formed color filters of the respective colors can be formed in a fixed size only on the optical semiconductor layer in a substantially displayable region of the pixel electrode portion 11 with the end of the wiring electrode 9 as a boundary, as in the first embodiment. Was. The color filter on the drive board has high resolution and excellent surface smoothness,
And it had a uniform and sufficient coloring density. In addition, a drive substrate with a color filter provided with a color filter having high resolution, excellent surface smoothness, and uniform and sufficient coloring density without combining a separately manufactured TFT drive substrate and a color filter; Thus, a liquid crystal display device having a high-resolution pixel pattern could be obtained at lower cost.

[0141]

According to the present invention, a thin film transistor (T
On a substrate provided with an electronic circuit material such as FT), by using the driving voltage of the electronic circuit material, a colored electrodeposition film (high in resolution, excellent in surface smoothness, uniform and having a sufficient coloring concentration) (A color filter film) can be formed. In addition, a drive substrate with a color filter provided with a color filter having high resolution, excellent surface smoothness, and uniform and sufficient coloring density without combining a separately manufactured TFT drive substrate and a color filter; Thus, a liquid crystal display device having a high-resolution pixel pattern can be provided at lower cost.

[Brief description of the drawings]

FIG. 1 is a circuit diagram when a substrate having a plurality of display portions (pixels) is brought into contact with an electrolytic solution.

FIG. 2 is a diagram showing an energy band of an optical semiconductor having a Schottky junction.

FIG. 3 is a diagram showing an energy band of an optical semiconductor having a pin junction.

FIG. 4 is a cross-sectional view showing an example of a liquid crystal display element of the present invention using a thin film transistor as an active element.

FIG. 5 is a plan view showing a part of a main substrate A in FIG.

FIG. 6 is a view exemplifying a part of the steps of the method for manufacturing a driving substrate with a color filter of the present invention.

FIG. 7 is a view exemplifying a part of the steps of the method for manufacturing a driving substrate with a color filter of the present invention.

FIG. 8 is a diagram exemplifying a part of the steps of the method for manufacturing a driving substrate with a color filter of the present invention.

FIG. 9 is a view exemplifying a part of the steps of the method for manufacturing a driving substrate with a color filter of the present invention.

FIG. 10 is a view showing an example of a driving substrate with a color filter of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Thin-film transistor 2 Gate electrode layer 2a Scanning wiring 3 Gate insulating layer 4 Channel layer 6 Drain electrode layer 7 Source electrode layer 8 Interlayer insulating layer 9 Wiring electrode layer 9a Data wiring 10 Passivation layer 11 Display part (pixel) 12 Pixel electrode (electrode part) 13) optical semiconductor layer 14 colored electrodeposition film (color filter) 15 electrode (driving electrode layer) 16, 18 alignment film 17 liquid crystal layer 19 counter electrode layer 20 black matrix layer 21, 31 glass substrate

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G09F 9/30 349 G09G 3/36 G09G 3/36 G02F 1/136 500 (72) Inventor Takayuki Yamada Kanagawa 430 Nakai-cho, Nakai-cho, Ashigara-Kami-gun Green Tech Nakai Fuji Xerox Co., Ltd. (72) Inventor Yoshio Nishihara 430 Sakai-Nakai-cho, Ashigaruga-gun, Kanagawa Green Tech-Nakai Inside Fuji Xerox Co., Ltd. Tech Naka In Fuji Xerox Co., Ltd. (72) Inventor Shigemi Otsu 430 Nakai-cho, Ashigami-gun, Kanagawa Prefecture Green Tech Naka In Fuji Xerox Co., Ltd. (72) Takao Tomino 430 Sakai Nakai-cho, Ashigaruga-gun, Kanagawa Green Tech Naka Fuji Xerox (72) Inventor Keiji Shimizu 430 Border, Nakaicho, Ashigara-gun, Kanagawa Prefecture Green Tech Nakai Fuji Xerox Co., Ltd.

Claims (12)

[Claims] 1. A substrate having an electronic circuit material and a light-transmissive electrode portion connected to data wiring via the electronic circuit material on a light-transmissive substrate, and an electrodeposition material containing a coloring material. And contacting the electrode portion with an aqueous electrolyte solution, applying a total energy of an energy supplied from a data wiring and a compensation energy different from the energy to the electrode portion, and electrochemically deposits the electrode on the electrode portion. A method for manufacturing a driving substrate with a color filter, comprising forming a colored electrodeposition film by depositing a material. 2. The driving substrate with a color filter according to claim 1, wherein the compensation energy is a photoelectromotive force obtained by irradiating the light transmitting optical semiconductor layer provided on the light transmitting electrode with light. Manufacturing method. 3. The method of manufacturing a driving substrate with a color filter according to claim 2, wherein a photoelectromotive force is generated only in a light-irradiated portion of the optical semiconductor layer on the electrode portion excluding a region having an electronic circuit material of the substrate. 4. A substrate is irradiated with light using an electronic circuit material as a mask from a side of the light-transmitting substrate on which the optical semiconductor layer is not provided, and photoelectromotive force is applied only to a light-irradiated portion of the optical semiconductor layer. The method for manufacturing a drive substrate with a color filter according to claim 2, wherein the drive substrate is generated. 5. The method according to claim 1, wherein the compensation energy is supplied from a power supply line connected to the light-transmitting electrode portion and different from a data line. 6. The method for manufacturing a driving substrate with a color filter according to claim 1, wherein an electrode capable of supplying a driving current for liquid crystal display is further provided on the colored electrodeposition film. 7. The method for manufacturing a driving substrate with a color filter according to claim 6, further comprising the step of conducting the electrode and the light-transmitting electrode portion. 8. The method according to claim 1, wherein the electrodeposition material includes a compound having a carboxyl group. 9. The compound having a carboxyl group is a polymer having a hydrophobic domain and a hydrophilic domain, and 50% or more of the number of the hydrophilic domains is water-soluble to water-insoluble due to a change in pH, or 9. The method for manufacturing a driving substrate with a color filter according to claim 8, wherein the driving substrate can be changed reversibly. 10. The method according to claim 9, wherein the acid value of the polymer is from 60 to 200. 11. A plurality of thin film transistors regularly arranged on a light-transmitting substrate, a scanning wiring for commonly connecting a gate electrode layer of the thin film transistor, and a source electrode layer of the thin film transistor commonly connected. A data line, a light-transmitting electrode portion connected to the drain electrode layer of the thin film transistor, a light-transmitting optical semiconductor layer provided on at least the light-transmitting electrode portion, and A driving substrate with a color filter, comprising: a colored electrodeposition film formed only on the electrode member; and an electrode provided on the colored electrodeposition film so as to be connected to the electrode portion. 12. A driving substrate with a color filter according to claim 11, a light-transmissive counter electrode substrate disposed to face the driving substrate with a color filter, and an opposition to the driving substrate with a color filter. A liquid crystal material sealed between the electrode substrate and the electrode substrate.