JP2001196367A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a low dielectric constant film structure which is easy to process for use as an interlayer insulating film, has a small rise in dielectric constant due to moisture absorption, and has few problems such as film peeling, cracking, gas release, and low withstand voltage. A semiconductor device using the same and a method for manufacturing the same are provided. SOLUTION: On a low dielectric constant organic film, a SiOC film having a thickness of about 200 nm deposited at a substrate temperature surface temperature of 400 ° C. or lower is deposited in a reducing atmosphere. Using the SiOC film as a mask, the underlying organic film can be etched.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an insulating film structure of an interlayer insulating film in a semiconductor device and a method of manufacturing the same. Low dielectric constant SiOC with low dielectric constant
The present invention relates to an insulating film structure having a film formed thereon and a method for forming the same.

[0002]

2. Description of the Related Art Along with demands for miniaturization, low power consumption, and high speed of a semiconductor device, lowering the dielectric constant of an interlayer insulating film has been studied as one of means for realizing the demand. The demand for lowering the dielectric constant of the interlayer insulating film material is
As the miniaturization of ULSI advances, it is becoming stronger.

At present, as an insulating film material which is put into practical use, there is an inorganic SiOF film having a relative dielectric constant of about 3.5.
This material is silicon-oxygen-silicon (Si-OS)
i) The relative dielectric constant is lowered due to the fact that the density of the material is reduced by terminating the bond with a fluorine atom, and the polarizability of the fluorine atom itself is low. As a promising next-generation low-k film, there is a low-k film material containing carbon atoms, and an organic SOG (Spin)
on Glass), fluorocarbon polymer, polyimide, polyparaxylylene and the like are well known.
These materials have a low dielectric constant due to a reduction in the density of the material due to the inclusion of a carbon atom, a so-called alkyl group, and a low polarizability of the molecule itself.

However, an organic film formed using the above-described low-dielectric-constant material containing carbon atoms does not have such a good film quality that it can be used alone as an interlayer insulating film. For example, a fluorocarbon film has low oxidation resistance, heat resistance, pressure resistance, stress resistance, and the like, and is difficult to apply to a semiconductor device as it is. For this reason, the use of a conventionally used silicon oxide film or a SiOF film has been studied.

However, when a silicon oxide film is formed on a fluorocarbon film, the heat resistance and the oxidation resistance of the fluorocarbon film are poor, so that the silicon oxide film is formed by chemical vapor deposition (CVD) using general plasma. It is difficult to use film formation technology.

That is, since an organic film such as a fluorocarbon film has a structure similar to that of a photoresist, its resistance to oxygen plasma is very low. Therefore, when a silicon oxide film is formed on an organic film by a plasma CVD method, only a carbon component of the organic film is extracted by oxygen radicals or the like in the plasma at the time of film formation, and the tensile stress of the extracted portion is reduced. Become stronger. As a result, cracks are formed in the organic film, and the insulating function as an interlayer insulating film cannot be sufficiently performed.

[0007] Organic films generally have low heat resistance. For example, the decomposition temperature of a fluororesin, which is one of the organic films developed for a semiconductor process, is usually about 420 ° C. to 450 ° C. However, in general, when a high-temperature process is performed after forming an organic film such as a fluorocarbon film, a small amount of gas is generated from the organic film, which causes a problem that the silicon oxide film formed on the organic film is separated.

On the other hand, in order to increase the resistance of an organic film surface such as a fluorocarbon film to oxygen plasma, a method of forming a silicon nitride film or a film containing more silicon atoms than an ordinary silicon oxide film on an organic film has been proposed. Have been. However, the former silicon nitride film has a relative dielectric constant as high as about 7, and the latter silicon oxide film containing a large amount of silicon atoms has a relative dielectric constant as high as about 5 and contains a large amount of hydrogen. Degradation).

Furthermore, when a silicon oxide film is formed on a fluorocarbon (organic) film, the mechanical strength of the fluorocarbon (organic) film is much weaker than that of a conventional silicon oxide film. Need to be controlled. That is, when the stress of the silicon oxide film is large, a problem such as tearing of the fluorocarbon (organic) film occurs.

A method for forming an interlayer insulating film for solving the above-mentioned problem is disclosed in, for example, Japanese Patent Application Laid-Open No. 11-87342. In this formation method, a silicon-based (eg, silicon oxide, silicon fluoride oxide, silicon oxynitride, silicon nitride, silicon fluoride oxynitride, etc.) insulating film is formed on an organic film formed on a substrate by chemical vapor deposition. This is a method for forming an interlayer insulating film to be formed, wherein the chemical vapor deposition is performed in a reducing atmosphere. At that time, a silane-based gas is used as a source gas supplied to the chemical vapor deposition atmosphere, and nitrous oxide is used as a gas for oxidizing the silane-based gas.

[0011]

However, a silicon-based (eg, silicon oxide, silicon fluoride oxide, silicon oxynitride, silicon nitride, etc.) insulating film is formed on the organic film formed on the substrate by chemical vapor deposition. In the structure and method of forming an interlayer insulating film, the effect of lowering the dielectric constant of the interlayer insulating film is small. For example, even when a fluoropolyallyl ether-based resin having a relative permittivity of about 2.7 is used as the organic film, the silicon-based insulating film formed thereover has a relative permittivity of not containing fluorine. About 3
Depending on the film thickness ratio between the organic film and the silicon-based insulating film, 2
The composite dielectric constant of the insulating film of the layer is about 3.5 and is inorganic SiOF.
Little difference from membrane.

Further, if an inorganic SiOF film is formed on the organic film, it is possible to lower the composite dielectric constant of the two-layer insulating film. However, the inorganic SiOF film easily absorbs moisture, and if it absorbs moisture, the relative dielectric constant is reduced. Is 4.3 or more, there is a problem that the combined dielectric constant is higher than when a silicon-based insulating film is used as an upper layer.

[0013] Recently, a SiOC film having a property intermediate between a conventional organic film and a silicon oxide film has been studied, but this film has a problem that dry etching is difficult. This is because the organic film and the inorganic film must be processed under conditions that can be etched because of the intermediate properties of the organic film and the inorganic film, so a silicon oxide hard mask can be used like an organic film. This is because the selectivity of the resist is as low as about 2. Therefore, it is difficult to apply to a single-layer insulating film having a thickness of about 500 nm.

The present invention has been made in view of the above, and has no problems such as the above-described oxidization and peeling of the surface of the low dielectric constant film, cracks due to stress, gas release, and low withstand voltage, and is excellent in workability. It is another object of the present invention to provide an insulating film structure capable of obtaining a sufficiently low low dielectric constant, and to provide a semiconductor device having such a structure and a method of manufacturing the same.

[0015]

Means taken to solve the above-mentioned problems according to the present invention is that an insulating organic film has an etching selectivity with respect to the organic film and a relative dielectric constant of 3 or more. The following is an insulating film structure in which a non-hygroscopic insulating film is formed. Specifically, the structure is such that an SiOC film is provided on an organic film as an insulating film structure. The manufacturing method includes a step of forming an organic film on the substrate and a step of forming an SiOC film on the organic film by plasma CVD in a reducing atmosphere using a methylsilane-based gas and dinitrogen monoxide. It has.

In the conventional CVD of a SiOC film, the substrate temperature generally exceeds 400 ° C. This is 50
This is because, when a SiOC film having a thickness of about 0 nm is formed, if the substrate temperature is low, there are problems such as an increase in tensile film stress and generation of cracks and a problem of poor uniformity of the film thickness. The present invention is characterized in that the temperature of the substrate surface is set to 400 ° C. or lower. However, since the film thickness is as thin as about 200 nm, the above-mentioned problem does not occur even in this case. Also, because of the temperature range of 400 ° C. or less,
There is no problem such as thermal decomposition of the underlying organic film.

Since the present invention has an insulating film structure in which an SiOC film is provided on an organic film, the surface of the organic film is oxidized, peeled off, cracks due to stress, gas, etc. Problems such as emission and low withstand voltage can be avoided. Further, since the SiOC film is thin, workability is improved as compared with the insulating film structure in which the entire structure is formed of the SiOC film. Further, since the SiOC film itself is a low dielectric constant film, it is possible to obtain an insulating film structure having a sufficiently low composite dielectric constant.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment according to the present invention will be described with reference to FIG.

FIG. 1 is a sectional view showing a first embodiment according to the insulating film structure of the present invention. As shown in FIG.
The insulating film 6 is formed thereon, and the lower wiring 5 is formed on the insulating film 6. The organic film 2 is formed so as to cover the insulating film 6 and the lower wiring 5. Further, an organic film 2 is further formed thereon.
, A non-hygroscopic film 3 having a relative dielectric constant of 3 or less is formed. The organic film 2 is an organic film having a relative dielectric constant of 3 or less. The film 3 is made of, for example, SiO
C film. The SiOC film has a dielectric constant of 3 or less by changing the concentration of C, and is a non-hygroscopic film. Further, for example, selectivity in dry etching can be obtained with respect to the organic film. Further, this SiOC film has a carbon concentration of 10 atomic% (hereinafter, at%
Or more) and at most 50 at%. As shown in FIG. 2, when the carbon concentration is in this range, the SiOC film functions as a low dielectric constant film. If the carbon concentration exceeds 50 at%, cracks occur due to film shrinkage due to release of carbon in the film when exposed to plasma of a mixed gas of nitrogen and oxygen.

In FIG. 1, the thickness of the organic film 2 is 500 n.
m, the relative dielectric constant is 2.7, and the thickness of the SiOC film 3 is 200 n.
Assuming that m and the relative permittivity are 2.9, the combined relative permittivity is about 2.84. This value has a sufficient effect on low power consumption and high speed of the semiconductor device.

By providing the structure described in the first embodiment of the present invention, it is possible to avoid the problem that the low dielectric constant film has low oxidation resistance, heat resistance, withstand voltage, stress resistance and the like.

Although the thickness of the SiOC film 3 is set to 200 nm, the thickness of the organic film 2 and the thickness of the organic film 2 are set to 200 nm.
This value is determined in consideration of the etching selectivity of the C film or the etching selectivity of the SiOC film 3 and the resist. For example, if the thickness of the organic film 2 is 500 nm, Si
The OC film may have a thickness of 100 to 300 nm.

Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 3 is a sectional view showing a third embodiment according to the insulating film structure of the present invention. This is an example used for wiring having a so-called damascene structure. In FIG. 3, a lower wiring 5 is formed on an insulating film 6 formed on a substrate 1. The organic film 2 is formed so as to cover the insulating film 6 and the lower wiring 5, and the SiOC film 3 is further formed thereon. The organic film 2 and the SiOC film 3 are processed to form a contact plug opening 7a and a wiring groove 8a.
In addition, an upper wiring 8 is formed.

In a recent semiconductor device, multilayer wiring is used, and the configuration shown in the second embodiment of the present invention is used by stacking several layers.

Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 4 is a sectional view showing a third embodiment according to the insulating film structure of the present invention. In FIG. 4, a lower wiring 5 is formed on an insulating film 6 formed on a substrate 1. The wiring 5 may be a wiring formed by normal etching as shown in FIG.
An embedded wiring formed in the insulating film 6 by using a so-called damascene method as shown in FIG. A first organic film 2a is formed on the insulating film 6 and the wiring 5;
A first SiOC film 3a is formed thereon. Further, a second organic film 2b and a second SiOC film 3b are formed thereon. First organic film 2a and first SiOC
A contact plug 7 is formed in the film 3a. An embedded wiring 8 is formed in the second organic film 2b and the second SiOC film 3b. The use of such a configuration facilitates the formation of the contact plug 7 and the wiring 8 as described later.

Further, a multilayer wiring is used in a recent semiconductor device, and the configuration shown in the third embodiment of the present invention is used by stacking several layers.

In the semiconductor device having the first to third insulating film structures of the present invention, high-speed operation is possible because the relative permittivity of the insulating film between wirings and between layers is sufficiently low.

As a fourth embodiment of the present invention, a method of manufacturing a semiconductor device according to the present invention will be described with reference to FIG. The lower wiring 5 is formed on the insulating film 6 formed on the substrate. Next, the organic film 2 is formed on the lower wiring 5. Here, as the organic film 2, a fluorinated polyallyl ether-based resin is formed to a thickness of, for example, 500 nm. First, a solution obtained by dissolving a fluorinated polyallyl ether-based resin in a fluorocarbon-based solvent is applied onto the substrate 1 by a spin coating method. Thereafter, baking is performed at 100 ° C. for 2 minutes in an atmosphere of, for example, nitrogen gas at 1 atm as an inert atmosphere.

Subsequently, annealing is performed at 350 ° C. in an inert atmosphere such as a nitrogen gas atmosphere.

Next, for example, a film having a film thickness of 20
A 0 nm SiOC film 3 is formed. At this time, by using a strongly reducing gas such as trimethylsilane, the film formation atmosphere is kept in a reducing atmosphere.

As a result, the surface of the organic film 2 is
Oxidation hardly occurs even in D. Note that the reason why the film formation atmosphere is kept in the reducing atmosphere even when nitrous oxide, which is an oxidizing gas, is added is because nitrous oxide mainly reacts with trimethylsilane. Therefore, since the surface of the organic film 2 is hardly oxidized, the surface of the organic film 2 is not roughened, and the SiO 2 film formed on the organic film 2 is formed.
There is no problem that the C film 3 is peeled off.

In this embodiment, a methylsilane-based gas is used as a reducing source gas, but the general formula SiR1R
Any organic silane-based gas represented by 2R3R4 (at least one of R1 to R4 is an alkyl group and the other is hydrogen) may be used. For example, an ethylsilane-based gas can be used as such a gas. The oxidizing gas may be any oxidizing gas except oxygen and ozone.

The carbon concentration of the SiOC film is 20 at%.
It is preferable that the film is formed under the condition of not less than 50 at% and not more than 50 at%. The temperature of the film formation surface is set to be higher than the temperature at which the SiOC film 3 grows and lower than 400 ° C. At a temperature higher than 400 ° C., a gas that causes the formed SiOC film to peel off (a portion where a heat-resistant structure cannot be formed in the thermosetting process of the fluoroallyl ether-based resin gradually becomes a gas) Is released from the organic film 2. At a temperature higher than 400 ° C., the organic film 2 may be thermally decomposed. The temperature at which the SiOC film 3 grows is 0 ° C. or higher, but preferably 300 ° C. or higher.

In this embodiment, a fluorinated polyallyl ether resin is used as the organic film.
G, a fluorocarbon polymer, polyimide, polyparaxylylene, or other low dielectric constant organic materials may be used. As the fluorinated polyallyl ether resin, for example, FLA
RE (product name) has been put to practical use.

Next, a method of manufacturing a semiconductor device according to the present invention will be described.

As a fifth embodiment of the present invention, a method of manufacturing a semiconductor device according to the present invention will be described with reference to FIG. As shown in FIG. 5A, on a silicon substrate 1 which is a semiconductor substrate as a substrate (an insulating film on the substrate is not shown),
According to the method described in the fourth embodiment, the organic film 2, SiO 2
The C film 3 is formed, and the opening pattern 7a is formed by the resist pattern 9. The method for forming the organic film 2 and the SiOC film 3 may be the method described in the fourth embodiment. Next, as shown in FIG. 5B, the SiOC film 3 is dry-etched using the resist pattern 9 as a mask. Si
The condition for dry-etching the OC film 3 may be, for example, a condition for etching a normal silicon oxide film using a CF-based gas and oxygen. In this case, the etching rate ratio of the SiOC film to the resist film is as small as about 2;
When the thickness of the OC film 3 is, for example, 200 nm, the resist does not disappear during the dry etching if the resist film thickness is 100 nm or more. Further, due to over-etching when etching the SiOC film 3, the organic film 2 under the opening pattern 7a may be etched by about 50 nm at the maximum.

Next, as shown in FIG.
Is removed. At this time, if ashing is performed by ordinary oxygen plasma, the organic film 2 below the opening pattern 7a may be etched. Therefore, it is possible to use a method of removing the resist by cleaning with a chemical solution capable of selectively removing the resist from the organic film 2, for example, EKC.

Next, as shown in FIG. 5D, the organic film 2 is dry-etched using the SiOC film 3 as a mask to form a connection hole 7b. This dry etching
For example, a high-density plasma source such as an inductively coupled plasma (ICP) is used with a mixed gas of nitrogen and oxygen. Thereafter, a metal is buried in the connection hole 7b, and the contact plug 7 is formed.

In this embodiment, the thickness of the SiOC film is 20
Since it is as thin as about 0 nm, dry etching is easy. Further, since the organic film is etched using the SiOC film as a mask, a selectivity can be easily obtained, and a good pattern can be formed.

Next, a first modification of the fifth embodiment of the present invention.
Will be described with reference to FIG. As shown in FIGS. 6A and 6B, a laminated structure including the organic film 2 and the SiOC film 3 is formed by the method described in the fifth embodiment, and the SiOC film 3 is opened by the resist pattern 9. I do. Next, as shown in FIG. 6C, the organic film 2 is etched without removing the resist 9. That is, the organic film 2 is etched using the resist 9 and the SiOC film 3 as a mask. Etching is performed by, for example, ICP plasma etching using a mixed gas of nitrogen and oxygen. At this time, the etching may be performed by switching the gas in the same apparatus as the etching of the SiOC film 3, or may be performed by another apparatus.

Next, as shown in FIG. 6D, the remaining resist film is removed. The removal method described in the fifth embodiment may be used.

In the first modification of the fifth embodiment, SiO
It is used as an etching mask for the organic film 2 without removing the resist film having the C film 3 opened. Therefore, the SiOC film 3 can be formed thinner than in the fifth embodiment. If the SiOC film 3 is thin, workability of the SiOC film 3 is improved.

Next, a second modification of the fifth embodiment of the present invention.
Will be described with reference to FIG. As shown in FIGS. 7A and 7B, the SiOC film 3 is opened by the resist pattern 9 by the method described in the fifth embodiment. Next, the organic film 2 is etched without removing the resist pattern 9. At this time, if the resist film is thin, the resist film is removed during the etching as shown in FIG. Thereafter, as shown in FIG.
The organic film 2 is etched using the OC film 3 as a mask, and a connection hole 7 is opened.

In the second modification of the fifth embodiment, the resist film thickness is adjusted so that the resist film disappears during the etching of the organic film 2. Therefore, the effect that the removal of the resist becomes unnecessary is obtained. When a resist removing step is present after etching the organic film, there are the following problems.

That is, the resist sometimes reacts with an etching gas or the like during the etching to form an altered layer on the surface. In some cases, this deteriorated layer cannot be sufficiently removed even by using a chemical such as EKC. In particular, when the surface of a large-area resist film is altered, it is difficult to remove it with a chemical solution. On the other hand, in the second modification of the fifth embodiment, since the resist is removed during the etching of the organic film, the resist removing step becomes unnecessary, and such a problem is eliminated.

Next, as a sixth embodiment of the present invention, a method for manufacturing a semiconductor device according to the present invention will be described with reference to FIG. As shown in FIGS. 8A and 8B, the fourth
According to the method described in the embodiment, the organic film 2 and the SiOC
A laminated structure including the film 3 is formed, and the SiOC film 3 and the organic film 2 are opened by the first resist pattern 9a to form an opening pattern 7a. Next, as shown in FIG. 8C, a second resist pattern 9b is formed on the SiOC film 3. Next, as shown in FIG. 8D, the SiOC film 3 and the organic film 2 are formed using the second resist pattern 9b as a mask.
Is etched to form a wiring groove pattern 8. The etching conditions described in Embodiment Mode 5 may be used. Thereafter, a metal film is buried in the opening pattern 7a and the groove pattern 8a to form a wiring.

Next, as a seventh embodiment of the present invention, a method for manufacturing a semiconductor device according to the present invention will be described with reference to FIG. As shown in FIG. 9A, a laminated structure including the organic film 2a and the SiOC film 3a is formed on the substrate on which the lower wiring 5 is formed by the method described in the fourth embodiment. Next, as shown in FIG.
a and the organic film 2a are opened by the first resist pattern to form an opening pattern 7a. The etching conditions described in Embodiment Mode 5 may be used. Next, FIG.
As shown in (c), the organic film 2b and the SiOC film 3b are formed again by the method described in the fourth embodiment. Further, as shown in FIG. 9D, the SiOC film 3b and the organic film 2b are opened by the second resist pattern, and the opening patterns 7a and 8a are simultaneously formed.

At this time, since the SiOC film 3a serves as an etching mask, the opening pattern 7a is formed to have almost the same shape as the opening shown in FIG. 9B. In addition, since the SiOC film 3a is used, the etching of the opening pattern 8a to be a wiring later is stopped at the SiOC film 3a, so that the depth control of the opening pattern 8a becomes easy. Here, the etching conditions may be the same as those described in the fifth embodiment.
Thereafter, as shown in FIG. 9E, a metal film is buried in the opening pattern 7a and the groove pattern 8a to form the plug 7 and the wiring 8.

Although the organic film 2a is also opened in FIG. 9B, only the SiOC film 3a may be opened. In this case, the organic film 2a is etched in the etching step shown in FIG. 9D, and the opening pattern 7a is formed. In this method, the opening pattern 7a is etched by 1
Since the number of times is sufficient, the problem that the side wall of the opening pattern 7a is deteriorated by etching can be reduced.

[0050]

According to the semiconductor device of the present invention, it is possible to solve the problem of the insulating film structure using only an organic film, such as low oxidation resistance, heat resistance, withstand voltage, and stress resistance. In addition, since the SiOC film is used, the relative dielectric constant of the entire insulating film structure is about 2.7 to 3, and the relative dielectric constant of the entire insulating film structure can be kept low. Speed and speed can be achieved.

According to the method of manufacturing a semiconductor device of the present invention, the surface of the organic film is not oxidized in the step of forming a structure in which the SiOC film is formed on the organic film, and the surface of the film is not oxidized. There is no rough surface.

Further, by keeping the temperature of the film formation surface within a certain range, it is possible to suppress the release of gas which causes the SiOC film to peel off from the organic film, and to cause thermal decomposition of the organic film. Not even. Therefore, the SiOC film is not easily peeled off from the organic film, and a stable film formation is possible.

Further, by reducing the thickness of the SiOC film formed on the organic film, the processing of the SiOC film is facilitated, and the semiconductor device can be miniaturized. Furthermore, a resist film and an SiOC film for opening the SiOC film are
Since the organic film is etched using the OC film as a mask, excellent workability can be obtained without damaging the surface of the organic film. Further, by using the method of removing the resist film during the etching of the organic film, the resist removing step can be omitted, so that damage to the organic film in the resist removing step can be avoided and the process cost can be reduced. .

[Brief description of the drawings]

FIG. 1 is a sectional view illustrating a first embodiment and a fourth embodiment of the present invention.

FIG. 2 is a diagram showing the relationship between the carbon concentration of a SiOC film and the relative dielectric constant.

FIG. 3 is a cross-sectional view illustrating a second embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a third embodiment of the present invention.

FIG. 5 is a process cross-sectional view illustrating a fifth embodiment of the present invention.

FIG. 6 is a process cross-sectional view illustrating a first modification of the fifth embodiment of the present invention.

FIG. 7 is a process sectional view illustrating a second modification of the fifth embodiment of the present invention.

FIG. 8 is a process cross-sectional view illustrating a sixth embodiment of the present invention.

FIG. 9 is a process cross-sectional view illustrating a seventh embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2, 2a, 2b Organic film 3, 3a, 3b SiOC film 5 Lower layer wiring 6 Insulating film 7 Contact plug 7a Opening pattern 7b Connection hole 8 Upper layer wiring 8a Wiring pattern 9 Resist pattern 9a Resist pattern 9b Resist pattern

Claims (13)

[Claims] A first insulating film made of an organic film;
An insulating film structure comprising a second insulating film formed on the insulating film, wherein the second insulating film has etching selectivity with respect to the first insulating film, and has a relative dielectric constant of 3 A semiconductor device having an insulating film structure characterized by the following non-hygroscopic insulating film. 2. The semiconductor device according to claim 1, wherein said second insulating film is a SiOC film. 3. A semiconductor device comprising two or more insulating film structures each having an SiOC film on an organic film. 4. The method according to claim 1, wherein the carbon concentration of the SiOC film is 10 atoms.
The semiconductor device according to claim 2, wherein the semiconductor device is not less than ic% and not more than 50 atomic%. 5. A method for manufacturing a semiconductor device having an insulating film structure in which an SiOC film is formed on an organic film formed on a substrate by a chemical vapor deposition method, wherein the chemical vapor deposition is performed by reduction. A method for manufacturing a semiconductor device, wherein the method is performed in a neutral atmosphere. 6. The method of manufacturing a semiconductor device according to claim 5, wherein the temperature of the film forming surface during said chemical vapor deposition is not lower than the temperature at which the SiOC film is grown and not higher than 400 ° C. 7. The chemical vapor deposition according to the general formula SiR1R
7. The method for manufacturing a semiconductor device according to claim 6, wherein an organic silane-based gas represented by 2R3R4 (at least one of R1 to R4 is an alkyl group and the others are hydrogen) is used. 8. The method according to claim 7, wherein an oxidizing gas (excluding oxygen and ozone) is added to said chemical vapor deposition. 9. A method of manufacturing a semiconductor device, comprising: a step of opening an SiOC film formed on an organic film on a substrate; and a step of etching the organic film using the opened SiOC film as a mask. Method. 10. A method comprising: forming an SiOC film on an organic film on a substrate; opening the SiOC film; and etching the organic film using the opened SiOC film as a mask. Manufacturing method of a semiconductor device. 11. A step of forming an SiOC film on an organic film on a substrate, a step of forming a resist pattern on the SiOC film, and using the resist pattern formed on the SiOC film as a mask. Opening step, the resist pattern and the opened SiOC
A method for manufacturing a semiconductor device, comprising a step of etching the organic film using the film as a mask. 12. The method according to claim 11, wherein the resist pattern is removed during the step of etching the organic film. 13. The method according to claim 10, wherein the step of forming a SiOC film on the organic film uses the method according to claim 5. Description:
The manufacturing method of the semiconductor device described in the above.