JP2001185038A - Substrate for plasma display - Google Patents
Substrate for plasma displayInfo
- Publication number
- JP2001185038A JP2001185038A JP36551999A JP36551999A JP2001185038A JP 2001185038 A JP2001185038 A JP 2001185038A JP 36551999 A JP36551999 A JP 36551999A JP 36551999 A JP36551999 A JP 36551999A JP 2001185038 A JP2001185038 A JP 2001185038A
- Authority
- JP
- Japan
- Prior art keywords
- partition
- partition wall
- substrate
- surface roughness
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims description 53
- 238000005192 partition Methods 0.000 claims abstract description 150
- 230000003746 surface roughness Effects 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims description 21
- 230000007547 defect Effects 0.000 abstract description 17
- 239000011521 glass Substances 0.000 description 20
- 239000000203 mixture Substances 0.000 description 20
- 239000000843 powder Substances 0.000 description 19
- 238000000465 moulding Methods 0.000 description 15
- 239000011230 binding agent Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 230000002159 abnormal effect Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000002270 dispersing agent Substances 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000006259 organic additive Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000005361 soda-lime glass Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- YCLAMANSVUJYPT-UHFFFAOYSA-L aluminum chloride hydroxide hydrate Chemical compound O.[OH-].[Al+3].[Cl-] YCLAMANSVUJYPT-UHFFFAOYSA-L 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- -1 manganese, alkali salt Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Gas-Filled Discharge Tubes (AREA)
Abstract
(57)【要約】
【課題】PDPにおいて、隔壁欠陥、表示欠陥を無くす
ことを可能とする。
【解決手段】隔壁2の頂上部の表面粗さRmaxを2μ
m〜20μmとし、また、誘電体層7の表面粗さRma
xを10μm以下とする。
(57) [Problem] To eliminate partition wall defects and display defects in a PDP. A top surface of a partition wall has a surface roughness Rmax of 2 μm.
m to 20 μm, and the surface roughness Rma of the dielectric layer 7
x is set to 10 μm or less.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、高精度かつ安価な
薄型の大画面用カラー表示装置等に用いられるプラズマ
アドレス表示装置(PALC)、プラズマディスプレイ
(PDP)、電界放出素子(FED)などに用いられる
プラズマ表示装置用基板(以下PDP用基板)に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma address display (PALC), a plasma display (PDP), a field emission device (FED), and the like used for a high-precision, inexpensive, thin, large-screen color display, etc. The present invention relates to a plasma display device substrate (hereinafter, a PDP substrate) to be used.
【0002】[0002]
【従来の技術】従来から画像表示装置として多用されて
きたCRTは、容積及び重量が大きい等の欠点から、近
年のマルチメディアの浸透に伴い、情報のインターフェ
イスとして発光ダイオード(LED)や液晶(LC
D)、あるいは、電界放出素子(FED)、プラズマデ
ィスプレイ(PDP)、プラズマアドレス表示装置(P
ALC)等の大型画面で高画質、その上、軽量薄型で設
置場所を選ばない等の特長を有する平面画像表示装置が
開発され、これらの利用範囲が拡大しつつある。かかる
要求に応える平面画像表示装置としては、とりわけプラ
ズマ発光を利用したPDPが大型画面用カラー画像表示
装置の発光素子として将来性が注目されている。2. Description of the Related Art CRTs, which have been widely used as image display devices, have disadvantages such as large volume and large weight. Due to the recent spread of multimedia, light emitting diodes (LED) and liquid crystal (LC) have been used as information interfaces.
D) or field emission device (FED), plasma display (PDP), plasma address display (P
A flat image display device having features such as high image quality with a large screen such as ALC), light weight, and thinness, and which can be installed anywhere, has been developed, and the range of use thereof has been expanding. As a flat panel image display device that meets such demands, PDPs utilizing plasma emission are attracting attention as light-emitting elements of color image display devices for large screens.
【0003】これらの表示装置においては、各種放電現
象を利用するため、絶縁性基板を一定間隔で対向して配
置し、放電空間を形成し、ここへ放電ガスを充填させた
り、高真空に保つ必要から、放電空間を仕切る隔壁構造
が必要となるため、絶縁基板として用いるガラス基板と
熱膨張係数の近似したガラス成分を主成分とした隔壁材
料の成形により隔壁構造を形成している。[0003] In these display devices, in order to utilize various discharge phenomena, insulating substrates are arranged opposite to each other at regular intervals to form a discharge space, in which a discharge gas is filled or a high vacuum is maintained. Since a partition structure for partitioning the discharge space is required from the necessity, the partition structure is formed by molding a partition material mainly containing a glass component having a thermal expansion coefficient similar to that of a glass substrate used as an insulating substrate.
【0004】このような構造を有する画像表示装置とし
てPDPを例に説明する。PDPは、図4に示すよう
に、背面板1と正面板5をなす一対の平坦な透明絶縁基
板間の微少な表示セル4と呼ばれる隔壁2で囲まれた空
間に、対向する放電電極3とアドレス電極8、アドレス
電極8を覆うように誘電体層7を設け、前記空間に希ガ
ス等の放電可能なガスを封入した構造をなしており、放
電電極3間の維持放電により表示セル4内に設けた蛍光
体6を発光させて画面の表示素子として利用するもので
ある。従って、隔壁構造は放電の漏れなどで隣接する表
示セル4が発光してしまわないよう、その気密性、バリ
アー性が重要視される。A PDP will be described as an example of an image display device having such a structure. As shown in FIG. 4, the PDP is provided with a discharge electrode 3 and a discharge electrode 3 in a space surrounded by partition walls 2 called minute display cells 4 between a pair of flat transparent insulating substrates forming a back plate 1 and a front plate 5. An address electrode 8, a dielectric layer 7 is provided so as to cover the address electrode 8, and a structure in which a dischargeable gas such as a rare gas is filled in the space is formed. Is used to emit light by emitting the phosphor 6 provided on the screen. Therefore, the airtightness and barrier properties of the partition structure are regarded as important so that adjacent display cells 4 do not emit light due to leakage of discharge or the like.
【0005】また、隔壁構造の製造方法としてはスクリ
ーン印刷法、サンドブラスト法、感光性ペースト法、プ
レス成形法、樹脂埋め込み法など各種の成形方法が提案
されている。[0005] As a method of manufacturing the partition wall structure, various molding methods such as a screen printing method, a sand blast method, a photosensitive paste method, a press molding method, and a resin embedding method have been proposed.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、従来の
技術では、例えばスクリーン印刷法やサンドブラスト法
で隔壁を形成した場合では、隔壁頂上部には凹凸が多
く、表面粗さに不具合を持つため、正面板との接合部に
間隙が発生し、隔壁としての機能が十分に働かず、ま
た、正面板との接合、パネル封止時に隔壁頂部が欠け、
プラズマ放電のリークが発生し、隣のセルを発光させ、
結果として異常点灯となるといった問題があった。ま
た、同様の手法で隔壁を形成した場合、誘電体層の厚み
バラツキが生じやすいため、プラズマ放電が不安定にな
り、結果として異常点灯となる問題もあった。However, according to the prior art, when a partition is formed by, for example, a screen printing method or a sand blast method, there are many irregularities on the top of the partition and there is a problem in the surface roughness. A gap is generated at the joint with the face plate, the function as a partition does not work sufficiently, and the junction with the front plate, the top of the partition is missing at the time of panel sealing,
Leakage of plasma discharge occurs, causing adjacent cells to emit light,
As a result, there is a problem that abnormal lighting occurs. Further, when the partition walls are formed by the same method, the thickness of the dielectric layer tends to vary, so that the plasma discharge becomes unstable, resulting in abnormal lighting.
【0007】この問題を解決する方法として、特開平7
−176267号公報や特開平8−304804号公報
の記載事項によれば、隔壁頂上部を研磨することによ
り、隔壁頂上部前後の表面粗さ不具合によるプラズマリ
ーク現象を回避し、隔壁頂上部を平坦化、具体的にはR
maxが1μm以下とする方法が提案されている。As a method for solving this problem, Japanese Patent Application Laid-Open
According to JP-A-176267 and JP-A-8-304804, the top of the partition is polished to avoid a plasma leak phenomenon due to a surface roughness problem before and after the top of the partition, and the top of the partition is flattened. , Specifically, R
A method in which max is set to 1 μm or less has been proposed.
【0008】しかし、既存の製造方法に付け加えて、新
たに研磨等の別途処理工程を設けなければ隔壁頂上部の
平坦化ができないということと、新たな処理工程を追加
することにより製造工程が複雑化し工程歩留まりが低下
するといった問題が発生した。However, in addition to the existing manufacturing method, the flattening of the top of the partition wall cannot be performed without a separate processing step such as polishing, and the manufacturing step is complicated by adding a new processing step. And the process yield decreases.
【0009】この問題を解決する方法として、特開平9
−134676号公報の記載事項によれば、隔壁材粉体
とバインダーの混合物を成形型に充填して得た成形体を
基板に接合一体化させることで、隔壁頂上部を平坦化
し、Rmaxを2μm以下とする事が可能とされてい
る。As a method for solving this problem, Japanese Patent Application Laid-Open
According to the description of JP-A-134676, a molding obtained by filling a mixture of a partition material powder and a binder into a mold is joined and integrated with a substrate, thereby flattening the top of the partition and making Rmax 2 μm. It is possible to:
【0010】しかしながら、この場合、微粒の隔壁材粉
体が必要とされ、コスト的に非常に問題となる。また、
微粒の隔壁材粉体の為、凝集性が強く、バインダーとの
均一混練に多くの工数がかかり、また収量も少なくな
る。更に、隔壁材粉体同士の再凝集が起こり、隔壁形成
に支障をきたすといった問題がある。However, in this case, fine partition wall material powder is required, which is very problematic in terms of cost. Also,
Because of the fine partition wall material powder, the cohesiveness is strong, and the uniform kneading with the binder requires a lot of man-hours, and the yield is low. Further, there is a problem that reagglomeration of the partition wall material powders occurs and hinders formation of the partition walls.
【0011】本発明の目的は、上記課題に鑑みてなされ
たもので、二次的な処理を実施することなく、隔壁と正
面板の接合部でのプラズマ放電のリークによる異常点灯
を発生さないような、隔壁に沿った頂上部の表面粗さが
高精度であり、パネル封止時に欠けが発生しにくい隔壁
で構成され、且つ、誘電体層の表面粗さが高精度である
ことにより、放電安定性に優れたプラズマ表示装置用基
板を歩留まり良く提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and does not cause abnormal lighting due to leakage of plasma discharge at a junction between a partition and a front plate without performing secondary processing. Such, the surface roughness of the top along the partition wall is high precision, is configured with partition walls that are not easily chipped at the time of panel sealing, and the surface roughness of the dielectric layer is high precision, An object of the present invention is to provide a plasma display device substrate having excellent discharge stability with a high yield.
【0012】[0012]
【課題を解決するための手段】本発明者は前記課題に鑑
み鋭意研究検討した結果、二次的な処理を実施すること
なく、隔壁に沿った頂上部の表面粗さが高精度であり、
パネル封止時に欠けが発生しにくい隔壁で構成され、且
つ、誘電体層の表面粗さが高精度であることにより、放
電安定性に優れたプラズマ表示装置用基板を歩留まり良
く製造できることを見出し、本発明に至った。Means for Solving the Problems The present inventor has conducted intensive studies and studies in view of the above-mentioned problems, and as a result, without performing secondary processing, the surface roughness of the top along the partition walls has high accuracy,
It has been found that a plasma display device substrate having excellent discharge stability can be manufactured with high yield by being composed of partition walls in which chipping is unlikely to occur at the time of panel sealing, and having a highly accurate surface roughness of the dielectric layer. The present invention has been reached.
【0013】即ち、背面板上に、複数のアドレス電極と
これを覆う誘電体層を備えるとともに、各アドレス電極
間に配置された複数の隔壁を備えてなるプラズマ表示装
置用基板において、隔壁の頂上部の表面粗さRmaxを
2〜20μmの範囲としたことを特徴とするものであ
る。That is, in a plasma display device substrate comprising a plurality of address electrodes and a dielectric layer covering the plurality of address electrodes on a back plate, and a plurality of partition walls arranged between the address electrodes, The surface roughness Rmax of the portion is in the range of 2 to 20 μm.
【0014】また、上記誘電体層の表面粗さRmaxが
10μm以下となることを特徴とするものである。Further, the surface roughness Rmax of the dielectric layer is 10 μm or less.
【0015】また、隔壁の頂上部が、少なくとも20μ
mの幅の平坦部と、該平坦部の両端に備えた角度20°
〜70°の面取り部あるいは曲率半径10μm以上のR
面部からなることを特徴とするものである。Further, the top of the partition wall is at least 20 μm.
a flat part having a width of m and an angle of 20 ° provided at both ends of the flat part
Chamfered area of up to 70 ° or radius of curvature of 10 μm or more
It is characterized by comprising a surface portion.
【0016】[0016]
【作用】 本発明のプラズマ表示装置用基板によれば、
隔壁に沿った頂上部の表面粗さが小さいため、正面板と
の接合部において隔壁頂上部の接触が面接触となるため
プラズマ放電のリークによる隣接セルの異常点灯が起こ
らなくなり、表示欠陥が発生しにくいプラズマ表示装置
用背面基板になる。According to the plasma display device substrate of the present invention,
Due to the small surface roughness of the top along the partition, the top of the partition is in surface contact at the junction with the front plate, so that abnormal lighting of adjacent cells due to plasma discharge leakage does not occur and display defects occur A rear substrate for a plasma display device that is difficult to perform.
【0017】また、本発明のプラズマ表示装置用基板に
よれば、複数のアドレス電極を覆う誘電体層の表面粗さ
が小さいため、誘電体層厚みバラツキが小さくなり、プ
ラズマ放電安定性に優れ、表示欠陥が発生しにくいプラ
ズマ表示装置用基板になる。Further, according to the substrate for a plasma display device of the present invention, since the surface roughness of the dielectric layer covering the plurality of address electrodes is small, the thickness variation of the dielectric layer is small, and the plasma discharge stability is excellent. This is a substrate for a plasma display device in which display defects hardly occur.
【0018】さらに、二次的な処理工程を導入すること
なく、隔壁に沿った頂上部の表面粗さと誘電体層の表面
粗さが小さくでき、同時に隔壁損傷を低減できる隔壁形
状を具備できることにより、製品の高品質化と製造工程
の簡略化が同時に可能となった。Furthermore, without introducing a secondary treatment step, the surface roughness of the top and the dielectric layer along the partition can be reduced, and the partition can be provided with a partition shape capable of reducing damage to the partition. Thus, it has become possible to simultaneously improve the quality of products and simplify the manufacturing process.
【0019】[0019]
【発明の実施の形態】以下、本発明の実施形態を図によ
って説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings.
【0020】図1(a)(b)は本発明のプラズマ表示
装置用基板の概要断面図である。背面板1はソーダライ
ムガラスや各種セラミックスからなる絶縁基板であり、
背面板1には複数のアドレス電極7が形成される。そし
てアドレス電極8は、誘電体層7と隔壁2からなる構造
物により覆われ、各隔壁2により表示セル4が形成され
る。FIGS. 1A and 1B are schematic sectional views of a substrate for a plasma display device according to the present invention. The back plate 1 is an insulating substrate made of soda lime glass or various ceramics,
A plurality of address electrodes 7 are formed on the back plate 1. The address electrodes 8 are covered with a structure composed of the dielectric layer 7 and the barrier ribs 2, and the display cells 4 are formed by the barrier ribs 2.
【0021】ここで、本発明においては、隔壁2の頂上
部に、平坦部12とその両端に備えた面取り部13又は
R面部14を備えており、これら頂上部の表面粗さRm
axを2〜20μm以下としてある。これは、隔壁2が
プラズマ放電のリークを防ぐために十分な機能を果たす
ために必要な表面粗さであり、表面粗さRmaxが20
μmを超えると正面板5との接合部に間隙が発生し、隔
壁2としての機能が十分に働かず、プラズマ放電のリー
クが発生するため隣のセルを発光させ、結果として異常
点灯となる。一方、Rmaxが2μm未満ではプラズマ
放電リークの対策には十分効果的であるが、隔壁材料の
1次粉体自体を微粒子化しなければならず、また微粒子
化を行うことによって1次粒子同士の凝集が起こり隔壁
形成に支障をきたす場合があり、コスト、生産性の面で
問題となる。Here, in the present invention, a flat portion 12 and a chamfered portion 13 or an R-face portion 14 provided at both ends thereof are provided at the top of the partition 2, and the surface roughness Rm of the top is provided.
ax is set to 2 to 20 μm or less. This is a surface roughness necessary for the partition wall 2 to perform a sufficient function to prevent leakage of plasma discharge, and the surface roughness Rmax is 20%.
If it exceeds μm, a gap is generated at the joint with the front plate 5, the function as the partition wall 2 does not work sufficiently, and a leak of plasma discharge occurs, causing the adjacent cell to emit light, resulting in abnormal lighting. On the other hand, if Rmax is less than 2 μm, it is sufficiently effective to prevent plasma discharge leak. However, the primary powder itself of the partition wall material must be finely divided, and the primary particles are aggregated by the fineness. May occur, which may hinder the formation of the partition walls, which is a problem in terms of cost and productivity.
【0022】また、隔壁2の頂上の平坦部12は少なく
とも20μmの幅Wを有する必要がある。これは、隔壁
2がプラズマ放電リークを防ぐために十分な機能を果た
すと同時に正面板5との接合、パネル封止時に隔壁2が
損傷しない為に必要な幅である。The flat portion 12 on the top of the partition 2 must have a width W of at least 20 μm. This is a width necessary for the partition walls 2 to perform a sufficient function to prevent plasma discharge leakage and to prevent the partition walls 2 from being damaged at the time of joining with the front plate 5 and sealing the panel.
【0023】更に、隔壁2の平坦部12の両端には、図
1(a)に示す面取り部13又は図1(b)に示すR面
部14を備える。これは、隔壁2の頂端部が切り立った
形状であると、正面板5との接合、パネル封止時に隔壁
2頂端部に応力集中が起こり、そこを基点に欠け等の損
傷が起き易くなる為である。Further, at both ends of the flat portion 12 of the partition 2, a chamfered portion 13 shown in FIG. 1A or an R surface portion 14 shown in FIG. 1B is provided. This is because if the top end of the partition wall 2 has a steep shape, stress concentration occurs at the top end portion of the partition wall 2 at the time of joining with the front plate 5 and sealing the panel, and damage such as chipping is likely to occur at the base point. It is.
【0024】ここで、面取り部13の場合は平坦部12
に対して、角度θが20°から70°の範囲が好適であ
る。これは隔壁頂端部の欠けを防ぐのに有効な面取り形
状の角度であり、この範囲外では、例えば20°未満で
は面取り部13下側が欠け易くなり、例えば70°以上
では面取り部13上側が欠け易くなる。また、R面部1
4の場合は、R面部14の曲率半径rが10μm以上の
範囲が好適であり、この範囲外では、例えば、半径rが
10μm未満では、隔壁頂端部に欠けが発生し易くな
る。Here, in the case of the chamfered portion 13, the flat portion 12
Is preferably in the range of 20 ° to 70 °. This is an angle of the chamfered shape effective for preventing chipping of the top end of the partition wall. Outside this range, for example, if the angle is less than 20 °, the lower side of the chamfered portion 13 is easily chipped, and if the angle is 70 ° or more, the upper side of the chamfered portion 13 is chipped. It will be easier. Also, the R surface 1
In the case of No. 4, a range where the radius of curvature r of the R surface portion 14 is 10 μm or more is preferable. If the radius r is less than 10 μm, for example, chipping easily occurs at the top end of the partition wall.
【0025】また、図1に示す誘電体層7上の表面粗さ
Rmaxは10μm以下としてある。これは、安定した
プラズマ放電を得るために必要な表面粗さの値であり、
表面粗さRmaxが10μmを超えると、アドレス電極
8上の誘電体層7厚みバラツキによりプラズマ放電が不
安定になり、結果として点灯遅れ等の点灯欠陥となる。The surface roughness Rmax on the dielectric layer 7 shown in FIG. 1 is set to 10 μm or less. This is the value of the surface roughness required to obtain a stable plasma discharge,
If the surface roughness Rmax exceeds 10 μm, the plasma discharge becomes unstable due to a variation in the thickness of the dielectric layer 7 on the address electrode 8, resulting in lighting defects such as lighting delay.
【0026】次に本発明のPDP用基板の製造方法を説
明する。Next, a method of manufacturing a PDP substrate according to the present invention will be described.
【0027】図2は隔壁成形型に隔壁形成用組成物を充
填した後、背面板に転写させる方法である。FIG. 2 shows a method in which a partition wall forming mold is filled with a partition wall forming composition and then transferred to a back plate.
【0028】まず、図2(a)に示すように、隔壁2と
誘電体層7の形状に合致した凹部を有する成形型9を用
意する。この時、成形型9の凹部底面、つまりは隔壁2
頂上部に合致する面には面取り若しくはR面形状を有し
ておく。この成形型9の凹部にセラミックまたはガラス
粉末と溶媒および有機性添加物からなる隔壁形成用組成
物10を充填する。尚、この時用いるセラミックまたは
ガラス粉末は、特に微粉化処理を行う必要はなく、一般
的な粒径のものでよい。具体的には平均粒径が2〜5μ
mのものでよい。これらを背面板1に押し当て、前記隔
壁形成用組成物10に応じた硬化方法によって隔壁形成
用組成物10を硬化させる。First, as shown in FIG. 2A, a molding die 9 having a concave portion conforming to the shape of the partition 2 and the dielectric layer 7 is prepared. At this time, the bottom surface of the concave portion of the molding die 9, that is, the partition wall 2
The surface corresponding to the top has a chamfered or rounded surface. Into the concave portion of the molding die 9, a composition 10 for forming a partition wall comprising ceramic or glass powder, a solvent and an organic additive is filled. The ceramic or glass powder used at this time does not need to be particularly subjected to pulverization, and may have a general particle size. Specifically, the average particle size is 2 to 5 μm.
m. These are pressed against the back plate 1 and the composition 10 for forming a partition is cured by a curing method corresponding to the composition 10 for forming a partition.
【0029】次に図2(b)に示すように、その後、成
形型9を離型せしめ、背面板1上に隔壁2と誘電体層7
を転写する。かくして得られた隔壁成形体を所定温度に
て加熱して脱バインダー処理した後、焼成工程を経るこ
とで本発明の隔壁2と誘電体層7を有するプラズマ表示
装置用基板を容易に製造することができる。Next, as shown in FIG. 2B, the mold 9 is released, and the partition wall 2 and the dielectric layer 7 are formed on the back plate 1.
Transcribe The thus-obtained partition wall molded body is heated at a predetermined temperature to remove the binder, and then subjected to a baking step to easily manufacture the plasma display device substrate having the partition wall 2 and the dielectric layer 7 of the present invention. Can be.
【0030】図3は背面板上の隔壁形成用組成物からな
る隔壁形成層を、隔壁および誘電体層の形状に合致する
凹部を有する成形型を加圧して、該隔壁形成層を塑性変
形せしめ、背面板に隔壁及び誘電体層を形成する方法で
ある。FIG. 3 shows that the partition wall forming layer composed of the partition wall forming composition on the back plate is pressed against a mold having a concave portion conforming to the shape of the partition wall and the dielectric layer to plastically deform the partition wall forming layer. And forming a partition and a dielectric layer on the back plate.
【0031】まず、図3(a)に示すように背面板1上
に隔壁形成用組成物10を隔壁2および誘電体層7を形
成する部分に塗布して隔壁形成層11を形成する。この
時、隔壁形成組成物10を構成するセラミックやガラス
粉末は、特に微粉化処理を行う必要はなく、一般的な粒
径のものでよい。具体的には平均粒径が2〜5μmのも
のでよい。次に図3(b)に示すように、これを隔壁2
および誘電体層7の形状に合致する凹部を有する成形型
9により加圧し、該隔壁形成層11を塑性変形せしめ、
隔壁2および誘電体層7の形状を付与する。この時、成
形型9の凹部底面、つまりは隔壁2頂上部に合致する面
には面取り若しくはR面形状を有しておく。First, as shown in FIG. 3A, a partition-forming composition 10 is applied on a portion of the rear plate 1 where the partition 2 and the dielectric layer 7 are to be formed, to form a partition-forming layer 11. At this time, the ceramic or glass powder constituting the partition wall forming composition 10 does not need to be particularly subjected to pulverization treatment, and may have a general particle size. Specifically, those having an average particle size of 2 to 5 μm may be used. Next, as shown in FIG.
And pressurizing with a molding die 9 having a concave portion conforming to the shape of the dielectric layer 7 to plastically deform the partition wall forming layer 11,
The shapes of the partition 2 and the dielectric layer 7 are provided. At this time, the bottom surface of the concave portion of the mold 9, that is, the surface corresponding to the top of the partition 2 has a chamfered or rounded surface.
【0032】その後、図3(c)に示すように、成形型
9を離型して、隔壁2および誘電体層7を背面板1上に
成形することができる。この時、隔壁形成組成物10に
は一般的な粒径のセラミックやガラス粉末を用いている
ので、隔壁2の表面粗さは2〜20μm、誘電体層7の
表面粗さは10μm以下となる。かくして得られた隔壁
成形体を所定温度にて加熱して脱バインダー処理した
後、焼成工程を経ることで、本発明の隔壁2と誘電体層
7を有するプラズマ表示装置用基板を容易に製造するこ
とができる。Thereafter, as shown in FIG. 3C, the mold 9 is released, and the partition walls 2 and the dielectric layer 7 can be formed on the back plate 1. At this time, since the partition wall forming composition 10 uses ceramic or glass powder having a general particle size, the surface roughness of the partition walls 2 is 2 to 20 μm, and the surface roughness of the dielectric layer 7 is 10 μm or less. . The thus-obtained partition wall molded body is heated at a predetermined temperature to remove the binder, and then subjected to a firing step, whereby a substrate for a plasma display device having the partition walls 2 and the dielectric layer 7 of the present invention can be easily manufactured. be able to.
【0033】本発明に使用できる隔壁形成用組成物10
としては焼成後にガラス質となり、気密性を保持でき
る、一次原料としてセラミックまたはガラス粉末から成
るガラス材料であれば何れでも良く、たとえば、低融点
ガラス粉末と酸化物セラミック粉末の混合物等を無機成
分として使用することができ、該無機成分と溶媒および
有機性添加物の混合物を適宜、隔壁2および誘電体層7
の成形条件に応じて調整して使用することができる。The composition 10 for forming a partition wall usable in the present invention.
Any material may be used as long as it becomes glassy after firing and can maintain airtightness, as long as it is a glass material composed of ceramic or glass powder as a primary material, for example, a mixture of a low melting point glass powder and an oxide ceramic powder as an inorganic component. The mixture of the inorganic component, the solvent, and the organic additive may be appropriately mixed with the partition wall 2 and the dielectric layer 7.
Can be adjusted according to the molding conditions.
【0034】前記低融点ガラス粉末としては、ケイ酸塩
を主成分とし、鉛、亜鉛、硫黄、セレン、明礬、マンガ
ン、アルカリ塩、酸化ビスマス等の一種以上を含有した
各種ガラス材料を用いることができる。なお、前記セラ
ミックスまたはガラス粉末の平均粒径は、数十ミクロン
からサブミクロンのものが好適に用いることができ、好
ましくは2〜5ミクロンの範囲が望ましい。As the low melting point glass powder, various glass materials containing a silicate as a main component and one or more of lead, zinc, sulfur, selenium, alum, manganese, alkali salt, bismuth oxide and the like can be used. it can. The average particle size of the ceramic or glass powder is preferably several tens of microns to sub-micron, and is preferably in the range of 2 to 5 microns.
【0035】前記溶媒としては、前記有機性添加物と相
溶するものであれば特に限定するものではない。The solvent is not particularly limited as long as it is compatible with the organic additive.
【0036】前記有機性添加物としては、熱可塑性樹
脂、あるいは紫外線硬化樹脂、光硬化樹脂、熱硬化性樹
脂等を用いることができる。その他としては、分散剤、
離型剤、硬化剤、滑剤、可塑剤等の各種有機物を挙げる
ことができる。As the organic additive, a thermoplastic resin, an ultraviolet curable resin, a photocurable resin, a thermosetting resin, or the like can be used. Others include dispersants,
Examples include various organic substances such as a release agent, a curing agent, a lubricant, and a plasticizer.
【0037】次に本発明で使用できる成形型9は、セラ
ミックス、金属、樹脂、ゴム等の何れの材質でも良く、
特に限定するものではない。また、成形型9の形状は、
平板に限るわけではなく、隔壁2と同一形状の溝あるい
は誘電体層7の形状を具備する形状なら、いずれの形状
であってもい。Next, the molding die 9 that can be used in the present invention may be made of any material such as ceramics, metal, resin and rubber.
There is no particular limitation. The shape of the mold 9 is
The shape is not limited to a flat plate, and may be any shape as long as it has a groove having the same shape as the partition 2 or the shape of the dielectric layer 7.
【0038】また、本発明の背面板1に用いる基板とし
ては、ソーダライムガラスや低ソーダガラス、鉛アルカ
リケイ酸ガラス、ホウケイ酸塩ガラス等の透明ガラス基
板を用いることができ、隔壁材料と熱膨張係数が近似し
ていることが望ましい。As the substrate used for the back plate 1 of the present invention, a transparent glass substrate such as soda lime glass, low soda glass, lead alkali silicate glass and borosilicate glass can be used. It is desirable that the expansion coefficients are similar.
【0039】また、背面板1のアドレス電極8として
は、Ag、Ni、Al、Pt、Au、Pd、Cu等の導
体金属、あるいはこれらの合金、または前記導体金属や
その合金に少量のガラスフリットを混合した導電性ペー
ストを用いて形成することができる。The address electrodes 8 of the back plate 1 are made of a conductive metal such as Ag, Ni, Al, Pt, Au, Pd, Cu, or an alloy thereof, or a small amount of glass frit on the conductive metal or its alloy. Can be formed by using a conductive paste in which is mixed.
【0040】また、前記背面板1上に隔壁形成用組成物
10からなる隔壁形成層11を形成する手段は特に限定
するものではないが、たとえば、ロールコーター、ドク
ターブレード、スクリーン印刷、グラビア印刷等を用い
ることができ、最終的に均一な膜厚で形成できればよ
い。The means for forming the partition wall forming layer 11 composed of the partition wall forming composition 10 on the back plate 1 is not particularly limited. For example, a roll coater, a doctor blade, screen printing, gravure printing, etc. Can be used as long as it can be finally formed with a uniform film thickness.
【0041】[0041]
【実施例】次に、本発明のプラズマ表示装置用基板につ
いて以下のようにして評価した。 (実施例1)先ず、厚さ2.8mmの42インチサイズ
のソーダライムガラスから成る背面板1上に、厚膜印刷
法によりAgを主成分とする電極ペーストを用いて幅8
0μmのアドレス電極8をストライプ状に360μmピ
ッチで全面に形成して焼き付け、アドレス電極8付き背
面板1を作製した。一方、隔壁頂上平坦部幅50μm、
隔壁頂上平坦部との成す角度45°、幅20μmの面取
り形状で、高さが200μm、ピッチが360μmに相
当する隔壁形状の溝を多数有し、且つ誘電体層7の厚さ
20μmを考慮した成形型9を準備した。次に、成形型
9に低融点ガラス粉末と反応硬化性樹脂、溶媒、分散剤
から成る隔壁成形用組成物10を充填後、アドレス電極
8付き背面板1を成形型9に押しつけ、隔壁成形用組成
物10を反応硬化せしめ、隔壁2および誘電体層7形状
を付与した後、成形型9を離型して背面板1上に隔壁成
形体を形成した。次いで、隔壁成形体を密着した背面板
1を所定温度に保持して脱バインダーした後、550〜
600℃の温度で10分間焼成して背面板1と一体化し
た評価用のPDP用基板を作製した。Next, the substrate for a plasma display device of the present invention was evaluated as follows. (Example 1) First, on a back plate 1 made of soda-lime glass having a thickness of 2.8 mm and 42 inches in size, an electrode paste mainly composed of Ag was used to form a width 8 using a thick film printing method.
Address electrodes 8 of 0 μm were formed on the entire surface in a stripe pattern at a pitch of 360 μm and baked to produce back plate 1 with address electrodes 8. On the other hand, the flat part width at the top of the partition wall is 50 μm,
A chamfered shape having an angle of 45 ° with the flat portion on the top of the partition wall, a width of 20 μm, a large number of partition-shaped grooves having a height of 200 μm and a pitch of 360 μm, and the thickness of the dielectric layer 7 of 20 μm were taken into consideration. Mold 9 was prepared. Next, after filling a mold 10 with a partition wall forming composition 10 comprising a low melting glass powder, a reaction curable resin, a solvent, and a dispersant, the back plate 1 with the address electrodes 8 is pressed against the mold 9 to form a partition wall. After the composition 10 was cured by reaction to give the shape of the partition 2 and the dielectric layer 7, the mold 9 was released to form a partition molded body on the back plate 1. Next, after the rear plate 1 on which the partition wall molded body is in close contact is removed at a predetermined temperature to remove the binder, 550 to 550
It was baked at a temperature of 600 ° C. for 10 minutes to produce a PDP substrate for evaluation integrated with the back plate 1.
【0042】得られた基板を無作為に抽出した測定点
で、隔壁頂上平坦部の表面粗さを測定したところ、表面
粗さRmaxが5.33μmであった。また、誘電体層
7の表面粗さを測定したところ、表面粗さRmaxは
4.52μmであった。また、走査型電子顕微鏡(SE
M)で形状測定を行ったところ、隔壁頂上平坦部幅は4
5μm、面取り形状は角度45°、幅18μmであっ
た。 (実施例2)実施例1と同様にアドレス電極8付き背面
板1を作製した。一方、隔壁頂上平坦部幅が50μm、
隔壁頂端部半径50μm、高さが200μm、ピッチが
360μmに相当する隔壁形状の溝を多数有し、且つ誘
電体層7の厚さ20μmを考慮した成形型9を準備し
た。次に、アドレス電極8付き背面板1上に低融点ガラ
ス粉末と結合剤、溶媒、分散剤から成る隔壁成形用組成
物10をドクターブレードにて均一に塗布、乾燥して隔
壁形成層11を形成した。その後、成形型9を隔壁形成
層11が形成された背面板1に加圧圧着し、隔壁成形用
組成物10から成る隔壁形成層11を塑性変形させて隔
壁2および誘電体層7形状を付与した後、成形型9を離
型して背面板1上に隔壁成形体を形成した。その後、背
面板1を所定温度に保持して脱バインダーした後、55
0〜600℃の温度で10分間焼成して背面板1と一体
化した評価用のPDP用基板を作製した。When the surface roughness of the flat portion on the top of the partition wall was measured at a measurement point at which the obtained substrate was randomly extracted, the surface roughness Rmax was 5.33 μm. When the surface roughness of the dielectric layer 7 was measured, the surface roughness Rmax was 4.52 μm. Scanning electron microscope (SE
When the shape was measured in M), the flat part width at the top of the partition was 4
The chamfer shape was 5 μm, the angle was 45 °, and the width was 18 μm. (Example 2) A back plate 1 with address electrodes 8 was produced in the same manner as in Example 1. On the other hand, the flat portion width at the top of the partition is 50 μm,
A molding die 9 having many partition-shaped grooves corresponding to a partition top end radius of 50 μm, a height of 200 μm, and a pitch of 360 μm and considering the thickness of the dielectric layer 7 of 20 μm was prepared. Next, a partition wall forming composition 10 composed of a low melting glass powder, a binder, a solvent, and a dispersant is uniformly applied on the back plate 1 with the address electrodes 8 using a doctor blade and dried to form a partition wall forming layer 11. did. Thereafter, the mold 9 is press-bonded to the back plate 1 on which the partition wall forming layer 11 is formed, and the partition wall forming layer 11 made of the partition wall forming composition 10 is plastically deformed to give the shape of the partition wall 2 and the dielectric layer 7. After that, the molding die 9 was released to form a partition wall molded body on the back plate 1. Thereafter, the back plate 1 is maintained at a predetermined temperature to remove the binder, and
It was baked at a temperature of 0 to 600 ° C. for 10 minutes to produce a PDP substrate for evaluation integrated with the back plate 1.
【0043】得られた基板の隔壁頂上平坦部の表面粗さ
を測定したところ、表面粗さRmaxが4.92μm、
誘電体層7の表面粗さRmaxは4.27μmであり、
隔壁頂上平坦部幅は45μm、隔壁頂端部は半径45μ
mのR面を有していた。 (実施例3)実施例1と同様にアドレス電極8付き背面
板1を作製した。一方、隔壁頂上平坦部幅50μm、隔
壁頂上平坦部との成す角度10°、幅20μmの面取り
形状で、高さが200μm、ピッチが360μmに相当
する隔壁形状の溝を多数有し、且つ誘電体層7の厚さ2
0μmを考慮した成形型9を準備した。その後、実施例
2と同様の手法にて評価用PDP用基板を作製した。When the surface roughness of the flat portion on the top of the partition wall of the obtained substrate was measured, the surface roughness Rmax was 4.92 μm.
The surface roughness Rmax of the dielectric layer 7 is 4.27 μm,
The flat part width at the top of the partition is 45 μm, and the radius at the top end of the partition is 45 μm
m-plane. Example 3 A back plate 1 with address electrodes 8 was produced in the same manner as in Example 1. On the other hand, the partition top flat portion width is 50 μm, the chamfered shape formed by the angle of 10 ° with the partition top flat portion, the width is 20 μm, the height is 200 μm, the pitch is 360 μm, the partition shape has many grooves, and the dielectric is Layer 7 thickness 2
A mold 9 considering 0 μm was prepared. Thereafter, a PDP substrate for evaluation was produced in the same manner as in Example 2.
【0044】得られた基板の隔壁頂上平坦部の表面粗さ
を測定したところ、表面粗さRmaxが4.22μm、
誘電体層7の表面粗さRmaxは4.77μmであり、
隔壁頂上平坦部幅は45μm、面取り形状は角度10
°、幅18μmであった。 (実施例4)実施例1と同様にアドレス電極8付き背面
板1を作製した。一方、隔壁頂上平坦部幅が50μm、
隔壁頂端部半径10μm、高さが200μm、ピッチが
360μmに相当する隔壁形状の溝を多数有し、且つ誘
電体層7の厚さ20μmを考慮した成形型9を準備し
た。その後、実施例2と同様の手法にて評価用PDP用
基板を作製した。得られた基板の隔壁頂上平坦部の表面
粗さを測定したところ、表面粗さRmaxが5.12μ
m、誘電体層7の表面粗さRmaxは4.97μmであ
り、隔壁頂上平坦部幅は45μm、隔壁頂端部半径は8
μmのR面を有していた。 (実施例5)実施例1と同様にアドレス電極8付き背面
板1を作製した。次に、アドレス電極8付き背面板1上
に低融点ガラス粉末と結合剤、溶媒、分散剤から成る隔
壁成形用組成物10をドクターブレードにて均一に塗
布、乾燥して厚み200μmの隔壁形成層11を形成し
た。その後、隔壁形成層11上に感光性樹脂を貼り付
け、ライン幅90μm、ピッチ360μmでパターンニ
ングを行った後、サンドブラストで不要部を削り取り、
背面板1上に隔壁成形体を形成した。その後、背面板1
を所定温度に保持して脱バインダーした後、550〜6
00℃の温度で10分間焼成して背面板1と一体化した
評価用のPDP用基板を作製した。When the surface roughness of the flat portion on the top of the partition wall of the obtained substrate was measured, the surface roughness Rmax was 4.22 μm,
The surface roughness Rmax of the dielectric layer 7 is 4.77 μm,
The width of the flat portion at the top of the partition wall is 45 μm, and the chamfer shape is at an angle of 10.
° and a width of 18 μm. Example 4 A back plate 1 with address electrodes 8 was produced in the same manner as in Example 1. On the other hand, the flat portion width at the top of the partition is 50 μm,
A molding die 9 having a large number of partition-shaped grooves corresponding to a radius of the partition top end of 10 μm, a height of 200 μm, and a pitch of 360 μm, and considering the thickness of the dielectric layer 7 of 20 μm was prepared. Thereafter, a PDP substrate for evaluation was produced in the same manner as in Example 2. When the surface roughness of the flat part on the top of the partition wall of the obtained substrate was measured, the surface roughness Rmax was 5.12 μm.
m, the surface roughness Rmax of the dielectric layer 7 is 4.97 μm, the flat width at the top of the partition is 45 μm, and the radius at the top end of the partition is 8
It had a μm R-plane. Example 5 A back plate 1 with address electrodes 8 was produced in the same manner as in Example 1. Next, a partition wall forming composition 10 comprising a low melting glass powder, a binder, a solvent, and a dispersant is uniformly applied on a back plate 1 with an address electrode 8 with a doctor blade, and dried to form a 200 μm thick partition wall forming layer. 11 was formed. After that, a photosensitive resin was stuck on the partition wall forming layer 11 and patterning was performed at a line width of 90 μm and a pitch of 360 μm.
A partition wall molded body was formed on the back plate 1. Then, back plate 1
After the binder is removed at a predetermined temperature,
It was baked at a temperature of 00 ° C. for 10 minutes to produce a PDP substrate for evaluation integrated with the back plate 1.
【0045】得られた基板の隔壁頂上平坦部の表面粗さ
を測定したところ、表面粗さRmaxが5.01μm、
誘電体層7の表面粗さRmaxは12.98μmであ
り、隔壁頂上平坦部幅は83μm、隔壁頂端部は角度9
0°でR面は有していなかった。 (実施例6)実施例1と同様にアドレス電極8付き背面
板1を作製した。一方、隔壁頂上平坦部幅が20μm、
隔壁頂端部半径50μm、高さが200μm、ピッチが
360μmに相当する隔壁形状の溝を多数有し、且つ誘
電体層7の厚さ20μmを考慮した成形型9を準備し
た。その後、実施例2と同様の手法にて評価用PDP用
基板を作製した。得られた基板の隔壁頂上平坦部の表面
粗さを測定したところ、表面粗さRmaxが4.99μ
m、誘電体層7の表面粗さRmaxは4.45μmであ
り、隔壁頂上平坦部幅は18μm、隔壁頂端部半径は4
5μmのR面を有していた。 (比較例1)実施例1と同様にアドレス電極8付き背面
板1を作製した。次に、スクリーン印刷にて誘電体層7
を印刷、乾燥した。その後、ライン幅70μm、ピッチ
360μmのラインパターンを有するスクリーンにて、
10回厚膜積層印刷を繰り返し、背面板1上に隔壁成形
体を形成した。その後、背面板1を所定温度に保持して
脱バインダーした後、550〜600℃の温度で10分
間焼成して背面板1と一体化した評価用のPDP用基板
を作製した。得られた基板の隔壁頂上平坦部の表面粗さ
を測定したところ、表面粗さRmaxが21.11μ
m、誘電体層7の表面粗さRmaxは4.32μmであ
り、隔壁頂上平坦部幅は40μm、隔壁頂端部は半径5
0μmのR面を有していた。 (比較例2)実施例1と同様にアドレス電極8付き背面
板1を作製した。一方、隔壁頂上平坦部幅50μm、隔
壁頂上平坦部との成す角度45°、幅20μmの面取り
形状で、高さが200μm、ピッチが360μmに相当
する隔壁形状の溝を多数有し、且つ誘電体層7の厚さ2
0μmを考慮した成形型9を準備した。次に、アドレス
電極8付き背面板1上に、振動ミルにより微粉化処理を
行い平均粒径0.7μmとした低融点ガラス粉末と結合
剤、溶媒、分散剤から成る隔壁成形用組成物10をドク
ターブレードにて均一に塗布、乾燥して隔壁形成層11
を形成した。その後、実施例2と同様の手法にて評価用
PDP用基板を作製した。When the surface roughness of the flat portion on the top of the partition wall of the obtained substrate was measured, the surface roughness Rmax was 5.01 μm.
The surface roughness Rmax of the dielectric layer 7 is 12.98 μm, the width of the flat portion at the top of the partition is 83 μm, and the top end of the partition is at an angle of 9 μm.
At 0 °, there was no R-plane. (Example 6) A back plate 1 with address electrodes 8 was produced in the same manner as in Example 1. On the other hand, the flat portion width at the top of the partition wall is 20 μm,
A molding die 9 having many partition-shaped grooves corresponding to a partition top end radius of 50 μm, a height of 200 μm, and a pitch of 360 μm and considering the thickness of the dielectric layer 7 of 20 μm was prepared. Thereafter, a PDP substrate for evaluation was produced in the same manner as in Example 2. When the surface roughness of the flat part on the top of the partition wall of the obtained substrate was measured, the surface roughness Rmax was 4.99 μm.
m, the surface roughness Rmax of the dielectric layer 7 is 4.45 μm, the flat width at the top of the partition is 18 μm, and the radius at the top end of the partition is 4 μm.
It had an R-plane of 5 μm. Comparative Example 1 A back plate 1 with address electrodes 8 was produced in the same manner as in Example 1. Next, the dielectric layer 7 is screen-printed.
Was printed and dried. Then, on a screen having a line pattern with a line width of 70 μm and a pitch of 360 μm,
Thick film lamination printing was repeated 10 times to form a partition wall molded body on the back plate 1. Thereafter, the back plate 1 was held at a predetermined temperature to remove the binder, and then fired at a temperature of 550 to 600 ° C. for 10 minutes to produce a PDP substrate for evaluation integrated with the back plate 1. When the surface roughness of the flat portion on the top of the partition wall of the obtained substrate was measured, the surface roughness Rmax was 21.11 μm.
m, the surface roughness Rmax of the dielectric layer 7 is 4.32 μm, the flat portion width at the top of the partition is 40 μm, and the top end of the partition has a radius of 5 μm.
It had an R plane of 0 μm. Comparative Example 2 A back plate 1 with address electrodes 8 was produced in the same manner as in Example 1. On the other hand, the flat portion at the top of the partition has a chamfered shape with a width of 50 μm, an angle of 45 ° with the flat portion at the top of the partition, a width of 20 μm, a height of 200 μm, and a large number of partition-shaped grooves corresponding to a pitch of 360 μm. Layer 7 thickness 2
A mold 9 considering 0 μm was prepared. Next, on the back plate 1 with the address electrodes 8, a partitioning composition 10 composed of a low-melting glass powder having an average particle diameter of 0.7 μm, a binder, a solvent, and a dispersant was subjected to pulverization by a vibration mill. Uniformly apply and dry with a doctor blade to form partition wall forming layer 11
Was formed. Thereafter, a PDP substrate for evaluation was produced in the same manner as in Example 2.
【0046】得られた基板の隔壁頂上平坦部の表面粗さ
を測定したところ、表面粗さRmaxが1.88μm、
誘電体層7の表面粗さRmaxは2.05μmであり、
隔壁頂上平坦部幅は45μm、面取り形状は角度45
°、幅18μmであった。When the surface roughness of the flat portion on the top of the partition wall of the obtained substrate was measured, the surface roughness Rmax was 1.88 μm.
The surface roughness Rmax of the dielectric layer 7 is 2.05 μm,
The width of the flat part at the top of the partition wall is 45 μm, and the chamfered shape is an angle of 45.
° and a width of 18 μm.
【0047】かくして得られた実施例1〜2、比較例1
〜6の評価用のPDP用基板に蛍光体6を形成し、正面
板5と接合し、パネル化を行った。そして、作製したパ
ネルにおいて表示欠陥検査を行った。その後、それぞれ
のパネルより評価用PDP用基板を取り出し、画像処理
による外観検査装置を用いて隔壁の欠陥数を測定した。Examples 1 and 2 and Comparative Example 1 thus obtained
Phosphors 6 were formed on PDP substrates for evaluation of Nos. 6 to 6 and joined to the front plate 5 to form a panel. Then, a display defect inspection was performed on the manufactured panel. Thereafter, the substrate for evaluation PDP was taken out of each panel, and the number of defects of the partition walls was measured using an appearance inspection apparatus by image processing.
【0048】表1からも明らかなように、比較例1にお
いては隔壁頂上部表面粗さに起因する表示欠陥が68点
発生し、また、比較例2においては表面粗さ、隔壁形状
に起因する表示欠陥は発生しなかったが、表面粗さを小
さくする為にガラス粉体を微粉化したことで隔壁成形性
に影響を及ぼし表示欠陥が25点発生し、どちらも問題
であった。As is clear from Table 1, in Comparative Example 1, 68 display defects caused by the surface roughness on the top of the partition wall, and in Comparative Example 2, due to the surface roughness and the shape of the partition wall. No display defects occurred, but the fineness of the glass powder to reduce the surface roughness affected the partition wall formability, resulting in 25 display defects, both of which were problems.
【0049】一方、実施例3、4においては隔壁頂端部
の形状に起因する表示欠陥が5〜7点の発生、実施例5
においては隔壁頂端部の形状及び誘電体層部表面粗さに
起因する表示欠陥が16点の発生、実施例6においては
隔壁頂部幅に起因する表示欠陥が19点の発生に留まり
良好な結果であった。実施例1〜2については、隔壁欠
陥、表示欠陥とも発生しておらず、最適な結果であっ
た。尚、表示欠陥数が無いものを○、20点未満のもの
を△、20点以上のものを×と判定した。On the other hand, in Examples 3 and 4, 5 to 7 display defects caused by the shape of the top end of the partition wall were observed.
In the above, 16 points of display defects caused by the shape of the top end of the partition wall and the surface roughness of the dielectric layer portion occurred, and in Example 6, only 19 points of display defects caused by the width of the top of the partition wall occurred. there were. In Examples 1 and 2, neither a partition wall defect nor a display defect occurred, and the results were optimal. In addition, those having no display defects were evaluated as ○, those having less than 20 points as △, and those with 20 or more points as x.
【0050】尚、本発明は前記詳述した実施例に何等限
定されるものではない。The present invention is not limited to the above-described embodiment.
【0051】[0051]
【表1】 [Table 1]
【0052】[0052]
【発明の効果】以上のように、本発明のプラズマ表示装
置用基板によれば、隔壁に沿った頂上部の表面粗さが小
さいため、正面板との接合部において隔壁頂上部の接触
が面接触となるためプラズマ放電のリークによる隣接セ
ルの異常点灯が起こらなくなり、更に、誘電体層厚みバ
ラツキが小さくなり、プラズマ放電安定性に優れ、表示
欠陥が発生しにくくなる。また同時に、隔壁損傷を低減
できる隔壁形状を具備できることにより製品の高品質化
と製造工程の簡略化が同時に可能となった。As described above, according to the plasma display device substrate of the present invention, since the surface roughness of the top along the partition is small, the top of the partition is in contact with the front plate at the joint with the front plate. Because of the contact, abnormal lighting of adjacent cells due to plasma discharge leakage does not occur, and furthermore, variation in the thickness of the dielectric layer is reduced, plasma discharge stability is excellent, and display defects are less likely to occur. At the same time, by providing a partition shape that can reduce partition damage, it is possible to simultaneously improve the quality of products and simplify the manufacturing process.
【図1】(a)(b)は本発明に係るプラズマ表示装置
用基板の概略断面図である。FIGS. 1A and 1B are schematic cross-sectional views of a substrate for a plasma display device according to the present invention.
【図2】(a)(b)は本発明のプラズマ表示装置用基
板の転写成形法を示す工程図である。FIGS. 2A and 2B are process diagrams showing a transfer molding method for a substrate for a plasma display device of the present invention.
【図3】(a)(b)(c)は本発明のプラズマ表示装
置用基板の加圧成形法を示す工程図である。3 (a), 3 (b) and 3 (c) are process diagrams showing a pressure molding method for a plasma display device substrate of the present invention.
【図4】一般的なプラズマ表示装置用基板の断面図であ
る。FIG. 4 is a cross-sectional view of a general plasma display device substrate.
1:背面板 2:隔壁 3:放電電極 4:表示セル 5:正面板 6:蛍光体 7:誘電体層 8:アドレス電極 9:成形型 10:隔壁形成用組成物 11:隔壁形成層 12:平坦部 13:面取り部 14:R面部 W:平坦部の幅 θ:面取り部の角度 r:R面部の曲率半径 1: Back plate 2: Partition wall 3: Discharge electrode 4: Display cell 5: Front plate 6: Phosphor 7: Dielectric layer 8: Address electrode 9: Mold 10: Partition forming composition 11: Partition forming layer 12: Flat portion 13: chamfered portion 14: R surface portion W: width of flat portion θ: angle of chamfered portion r: radius of curvature of R surface portion
Claims (4)
誘電体層と複数の隔壁を備えてなるプラズマ表示装置用
基板において、前記隔壁の頂上部の表面粗さRmaxを
2〜20μmとしたことを特徴とするプラズマ表示装置
用基板。1. A plasma display device substrate comprising a plurality of electrodes, a dielectric layer covering the plurality of electrodes, and a plurality of partitions on a main surface of a back plate, wherein the top surface of the partitions has a surface roughness Rmax of 2 to 2. A substrate for a plasma display device having a thickness of 20 μm.
m以下としたことを特徴とする請求項1記載のプラズマ
表示装置用基板。2. The dielectric layer having a surface roughness Rmax of 10 μm.
2. The substrate for a plasma display device according to claim 1, wherein m is equal to or less than m.
の幅の平坦部と、該平坦部の両端に備えた角度20°〜
70°の面取り部からなることを特徴とする請求項1記
載のプラズマ表示装置用基板。3. The method according to claim 1, wherein the top of the partition wall is at least 20 μm.
A flat portion having a width of 20 ° and an angle of 20 ° provided at both ends of the flat portion.
2. The substrate for a plasma display device according to claim 1, wherein the substrate comprises a chamfer of 70 [deg.].
の幅の平坦部と、該平坦部の両端に備えた曲率半径10
μm以上のR面部からなることを特徴とする請求項1記
載のプラズマ表示装置用基板。4. The method according to claim 1, wherein the top of the partition wall is at least 20 μm.
And a radius of curvature 10 provided at both ends of the flat portion.
2. The substrate for a plasma display device according to claim 1, wherein the substrate has an R-plane portion of not less than μm.
Priority Applications (1)
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JP36551999A JP2001185038A (en) | 1999-12-22 | 1999-12-22 | Substrate for plasma display |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP36551999A JP2001185038A (en) | 1999-12-22 | 1999-12-22 | Substrate for plasma display |
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JP2004297949A Division JP2005019423A (en) | 2004-10-12 | 2004-10-12 | Substrates for plasma display devices |
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ID=18484469
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007038302A1 (en) * | 2005-09-28 | 2007-04-05 | 3M Innovative Properties Company | Method of making barrier partitions and articles |
KR100777737B1 (en) * | 2006-04-14 | 2007-11-19 | 삼성에스디아이 주식회사 | Plasma display panel |
JP2012068264A (en) * | 2011-12-19 | 2012-04-05 | Hitachi High-Technologies Corp | Method for obtaining roughness of substrate and device for obtaining roughness of substrate |
-
1999
- 1999-12-22 JP JP36551999A patent/JP2001185038A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007038302A1 (en) * | 2005-09-28 | 2007-04-05 | 3M Innovative Properties Company | Method of making barrier partitions and articles |
KR100777737B1 (en) * | 2006-04-14 | 2007-11-19 | 삼성에스디아이 주식회사 | Plasma display panel |
JP2012068264A (en) * | 2011-12-19 | 2012-04-05 | Hitachi High-Technologies Corp | Method for obtaining roughness of substrate and device for obtaining roughness of substrate |
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