JP2001172473A - Epoxy resin composition for sealing semiconductor and semiconductor apparatus using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an epoxy resin composition for sealing semiconductor, having a reduced relative permittivity for dealing with rise in frequency and a short gelation time in a situation of progress of rise in frequency of semiconductor element. SOLUTION: This epoxy resin composition for sealing semiconductor comprises (A) an epoxy resin, (B) a phenol resin, (C) a polyfunctional cyanate ester compound, (D) a cur promoter and (E) an inorganic filler as essential components. The equivalent ratio of hydroxyl group of the component (B) to 1 equivalent of epoxy group of the component (A) is set to 1.02 to 1.20 equivalent and the equivalent ratio of cyanate ester group of the component (C) to 1 equivalent of epoxy group of the component (A) to 0.10 to 1.00 equivalent, respectively.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-dielectric constant epoxy resin composition for semiconductor encapsulation having a significantly reduced relative dielectric constant, and a semiconductor device in which a semiconductor element is resin-encapsulated using the same. .

[0002]

2. Description of the Related Art Conventionally, transistors, IC, LS
A resin-encapsulated semiconductor device in which a semiconductor element such as I is resin-molded by transfer molding using an encapsulating material such as an epoxy resin composition is excellent in terms of reliability, mass productivity, low cost, and the like. Therefore, it is widely used together with a ceramic sealing type semiconductor device.

[0003]

However, in recent years, the functions and performance of semiconductor devices such as microprocessors have been improved and the operating frequency has tended to further increase. In the field of information and communication, small electronic devices such as mobile phones and PHSs have come to use frequency bands close to gigahertz with respect to their frequency bands, and further use gigahertz bands of two digits. At present, communications are also being developed.

As described above, as semiconductors become higher in frequency, semiconductor-encapsulated semiconductor devices having excellent high-frequency characteristics are often used for semiconductor devices that require high reliability. However, on the other hand, in reality, adoption of a low-cost resin-encapsulated semiconductor device excellent in mass productivity and various reliability as described above is being considered. For this reason, development of a low dielectric constant epoxy resin composition for a mold used in a resin-sealed semiconductor device is required.

As a low dielectric constant epoxy resin composition used for encapsulating a semiconductor device, for example, Japanese Patent Application Laid-Open No. 9-52
No. 941 discloses a cured product comprising a specific epoxy resin and a cyanate ester compound. However, this epoxy resin composition has a long gelling time,
It is very complicated in use, such as requiring long-time transfer molding, or the need to accurately mix and disperse a curing accelerator in order to adjust to a desired gel time. Japanese Patent Application Laid-Open No. 63-90531 discloses an epoxy resin comprising an epoxy resin, a polyvalent cyanate ester compound and a phenol novolak resin in a specific ratio, and having a good balance of heat resistance, water resistance and electric properties. A resin composition is disclosed. However, this epoxy resin composition does not mention anything about the dielectric properties, and it is hard to say that a suitable composition system and formulation for the epoxy resin composition exhibiting a low dielectric constant are clearly shown. Met.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and in a situation where the frequency of a semiconductor device is increasing, the relative dielectric constant corresponding to the increase in the frequency is reduced and the semiconductor encapsulation time is short. It is an object of the present invention to provide an epoxy resin composition for stopping and a semiconductor device resin-sealed using the same.

[0007]

In order to achieve the above object, the present invention provides an epoxy resin composition for semiconductor encapsulation containing the following components (A) to (E) as essential components: The hydroxyl group of the component (B) is used in an amount of 1.02 to 1.20 equivalents with respect to 1 equivalent of the epoxy group of the component (A), and the above-mentioned (C) is used with respect to 1 equivalent of the epoxy group of the component (A).
A first subject matter is an epoxy resin composition for semiconductor encapsulation in which the cyanate ester group of the component is set at an equivalent ratio of 0.10 to 1.00 equivalent. (A) Epoxy resin. (B) a phenolic resin. (C) Polyvalent cyanate ester compound. (D) a curing accelerator. (E) an inorganic filler.

[0008] A second aspect of the present invention is a semiconductor device in which a semiconductor element is encapsulated by using the epoxy resin composition for encapsulating a semiconductor.

The inventor of the present invention first obtained an epoxy resin, a phenol resin and an essential component in order to obtain an epoxy resin composition which is excellent in high-frequency characteristics and has a low dielectric constant and a short gelling time. Paying attention to each compounding amount of the polyvalent cyanate ester compound, the epoxy group of each component,
The research was repeated focusing on the equivalent ratio of hydroxyl group and cyanate ester group. As a result, the hydroxyl group of the phenol resin was set to 1.02 to 1.
It has been found that the above object is achieved when the cyanate ester group of the polyvalent cyanate ester compound is used in an equivalent ratio of 0.10 to 1.00 equivalent in 2 equivalents, and the present invention has been achieved.

Further, when an epoxy resin and a phenol resin are used in combination such that the sum of the epoxy equivalent of the epoxy resin and the hydroxyl equivalent of the phenol resin is a specific value or more, an epoxy resin composition having a lower dielectric constant can be obtained. Is obtained.

That is, although it is well known that an inexpensive resin encapsulation of a semiconductor element is performed by using an epoxy resin composition, it is not easy to simply use an epoxy resin and a phenol resin which have been used conventionally. It has been found that the dielectric constant is relatively high due to the high polarity of the secondary alcoholic hydroxyl group generated after the curing reaction in the cured product.
The present inventor has found that by reducing the concentration of the secondary alcoholic hydroxyl group generated after the curing reaction, the polarity can be reduced as a result, and the relative dielectric constant of the cured product can be reduced. is there.

In particular, the specific epoxy resin represented by the formula (1) is used as the epoxy resin as the component (A), and the phenol resin as the component (B) is used as the epoxy resin as the component (B). When the specific phenolic resin represented is used in combination, the total value of the epoxy equivalent and the hydroxyl equivalent is particularly high, and the relative permittivity of the obtained cured epoxy resin composition is further reduced, which is particularly preferable.

[0013]

Next, embodiments of the present invention will be described in detail.

The epoxy resin composition for semiconductor encapsulation of the present invention comprises an epoxy resin (component A), a phenol resin (component B), a polyvalent cyanate ester compound (component C),
It is obtained using a curing accelerator (D component) and an inorganic filler (E component), and is usually in the form of a powder or a tablet obtained by compressing the powder. Alternatively, the epoxy resin composition is melt-kneaded and then formed into a substantially columnar granule.

The epoxy resin (component A) is not particularly limited as long as it is solid at normal temperature (25 ° C.), and various conventionally known epoxy resins are used. For example, cresol novolak type epoxy resin, allylphenol novolak type epoxy resin, phenol novolak type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, bisphenol A type novolak type epoxy resin, phenol aralkyl type epoxy resin, fluorene type epoxy resin, diene Various epoxy resins such as a cyclopentadiene-based epoxy resin, a biphenyl-based epoxy resin obtained by reacting epichlorohydrin with a reaction product of a phenol and a biphenyl-based condensing agent, and derivatives thereof. These epoxy resins can be used alone or
Used in combination of more than one species. More preferably, it is preferable to use an epoxy resin in which the total value of the epoxy equivalent of the epoxy resin and the hydroxyl equivalent of the phenol resin described later is a specific value or more, and as a result, the epoxy resin is formed after the reaction of the cured product. The concentration of secondary alcoholic hydroxyl groups can be reduced. Specific examples of such an epoxy resin include an epoxy resin represented by the following formula (1), an epoxy resin represented by the following formula (3), and an epoxy resin represented by the following formula (4). Examples of the resin include an epoxy resin represented by the following formula (5).

[0016]

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[0017]

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[0018]

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[0019]

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The phenol resin (component B) acts as a curing agent for the epoxy resin (component A), and is not particularly limited as long as it is solid at normal temperature (25 ° C.). Resin is used. For example, phenol novolak, cresol novolak,
Examples include various phenolic resins such as bisphenol A type novolak, naphthol novolak, phenol aralkyl resin, fluorene novolak, dicyclopentadiene novolak, and novolak composed of a reaction product of a phenol and a biphenyl condensing agent, and derivatives thereof. These phenolic resins may be used alone or
Used in combination of more than one species. More preferably, it is preferable to use a phenol resin such that the total value of the hydroxyl equivalent of the phenol resin and the epoxy equivalent of the above-mentioned epoxy resin is equal to or more than a specific value, and as a result, it is generated after the reaction of the cured product. The concentration of secondary alcoholic hydroxyl groups can be reduced. As such a phenol resin, specifically, a phenol resin represented by the following formula (2), a phenol resin represented by the following formula (6), and a phenol represented by the following formula (7) Resins, and phenolic resins represented by the following formula (8).

[0021]

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[0022]

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[0023]

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[0024]

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As the polyvalent cyanate ester compound (component C) used together with the epoxy resin (component A) and the phenol resin (component B), conventionally known polyvalent cyanate ester compounds can be used. Is bis (3,5-dimethyl-4-cyanatephenyl) methane, bis (4-cyanatephenyl) methane,
Bis (3-ethyl-4-cyanatephenyl) methane,
Bis (4-cyanatephenyl) -1,1-ethane, bis (4-cyanatephenyl) -2,2-propane, di (4-cyanatephenyl) ether, di (4-cyanatephenyl) thioether, 4,4 ′ -{1,3-phenylenebis (1-methylethylidene)} biphenyl cyanate, 2,2-bis (4-cyanatophenyl)-
Divalent cyanate ester compounds such as 1,1,1,3,3,3-hexafluoropropane, tris (4-cyanatephenyl) -1,1,1-ethane, bis (3,5-dimethyl-4-cyanate) Phenyl) -4-cyanate phenyl-1,1,1-ethane and other trivalent cyanate ester compounds, phenol novolak-type cyanate ester, cresol novolak-type cyanate ester and other polyhydric phenol polycyanate esters, and partial trimerization thereof Various polyvalent cyanate ester compounds ranging from liquid to solid, such as polyhydric cyanate ester oligomer resins, which are compounds. These polyvalent cyanate ester compounds may be used alone or in combination of two or more.

The mixing ratio of the epoxy resin (component A), the phenol resin (component B) and the polyvalent cyanate ester compound (component C) is such that the phenol resin is equivalent to one equivalent of the epoxy group of the epoxy resin (component A). The hydroxyl group of the (B component) is 1.02 to 1.20 equivalents, and the cyanate ester group of the polyvalent cyanate ester compound (C component) is 0.10 to 1 equivalent to 1 equivalent of the epoxy group of the epoxy resin (A component). It is necessary to set the equivalent ratio to a ratio of 1.00 equivalent. Particularly preferably, the hydroxyl group of the phenol resin (component B) is 1.02 to 1.10 equivalents and the epoxy group of the epoxy resin (component A) is equivalent to 1 equivalent of the epoxy group of the epoxy resin (component A). On the other hand, it is to set the cyanate ester group of the polyvalent cyanate ester compound (component C) to an equivalent ratio of 0.20 to 0.80 equivalent. That is, when the hydroxyl group of the phenol resin (component B) and the cyanate ester group of the polyvalent cyanate ester compound (component C) are out of the above range, for example, when the cyanate ester group is less than 0.10 equivalent, the object of the present invention is achieved. This is because the effect of reducing the relative dielectric constant cannot be obtained, and if the cyanate ester group exceeds 1.00 equivalent, the gelation time suitable for low-pressure transfer molding becomes longer.

As described above, by containing a cyanate ester group in the epoxy resin composition, the concentration of hydroxyl groups contained in the cured epoxy resin composition can be reduced, and as a result, low dielectric constant can be obtained. Although the efficiency can be improved, it is difficult to control the curing reactivity as a molding material. It is generally known that an epoxy group, a cyanate ester group and a phenolic hydroxyl group react with each other in the presence of a reaction accelerator (reaction catalyst). In particular, a cyanate ester group easily reacts with a compound having active hydrogen, and easily forms an imidocarbonate bond with a phenolic resin having a phenolic hydroxyl group. Since the above-mentioned reaction is easy to react before the reaction between the epoxy group and the cyanate ester group, the reaction between the epoxy group and the phenolic hydroxyl group, or the trimerization reaction between the cyanate ester groups, the respective raw materials to be compounded It is difficult to control the three-dimensional curing reaction (delaying the curing time, accelerating the curing time, etc.) depending on the inappropriate use ratio of the epoxy resin, and it is difficult to control the curing reactivity of the epoxy resin composition. The present inventor has developed the epoxy resin composition for semiconductor encapsulation of the present invention from such circumstances, and sets the epoxy resin, the phenol resin, and the polyvalent cyanate ester compound at the appropriate ratio as described above. As a result, it has been found that the gelation time can be shortened as well as the dielectric constant is reduced.

The curing accelerator (component D) used together with the above components A to C is not particularly limited, and is a conventionally known curing accelerator, specifically, 1,8-diazabicyclo (5,4,0). ) Tertiary amines such as undecene-7 and triethylenediamine; imidazoles such as 2-methylimidazole; and phosphorus-based curing accelerators such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate. On the other hand, organic metal salts such as cobalt octylate, zinc octylate, manganese naphthenate, copper naphthenate, zinc naphthenate, tin naphthenate, nickel naphthenate and iron naphthenate, copper acetylacetonate, cobalt acetylacetonate and the like Metal chelate compounds such as acetylacetonate can also be used. These curing accelerators can be used alone or in combination of two or more.

The content of the curing accelerator (component D) is 0.1 to 100 parts by weight of the phenol resin (component B).
It is preferable to set in the range of 5 to 10 parts by weight.

As the inorganic filler (component E) used together with the above components A to D, various inorganic fillers conventionally used are used. For example, silica powder such as fused silica, alumina, silicon nitride, aluminum nitride,
Examples include boron nitride, magnesia, calcium silicate, magnesium hydroxide, titanium white, and the like. Among them, spherical silica powder, milled silica powder, crushed silica powder and the like are preferably used. In particular, it is preferable to use spherical fused silica powder. And it is preferable to use a thing with a maximum particle diameter of 100 micrometers or less as said inorganic filler. Further, the average particle size is 1 to 20 together with the maximum particle size.
It is preferable to use one in the range of μm. The maximum particle size and the average particle size can be measured using, for example, a laser diffraction / scattering type particle size distribution analyzer.

The content ratio of the inorganic filler (component E) is preferably set in the range of 50 to 90% by weight in the whole epoxy resin composition. More preferably 60 to 8
0% by weight. That is, when the content ratio of the inorganic filler exceeds 90% by weight, the ratio of the relative dielectric constant of the inorganic filler such as silica powder of the cured epoxy resin composition for sealing increases, so that the present invention This is because there is a tendency to be incompatible with the lowering of the dielectric constant which is the object of the above.

The epoxy resin composition for semiconductor encapsulation of the present invention comprises the above-mentioned epoxy resin (component A), phenol resin (component B), polyvalent cyanate ester compound (component C), curing accelerator (component D) ) And an inorganic filler (component E), if necessary, a low-stressing agent, a pigment, a release agent,
Various additives such as a flame retardant and a coupling agent can be appropriately blended.

Examples of the stress reducing agent include silicone compounds such as side chain ethylene glycol type dimethylsiloxane, acrylonitrile-butadiene rubber and the like.

Examples of the pigment include carbon black and titanium oxide. Further, as the release agent,
Examples include polyethylene wax, carnauba wax, and fatty acid salts.

Examples of the flame retardant include a halogen-based flame retardant such as a brominated epoxy resin, and a flame retardant auxiliary such as antimony trioxide.

Further, in addition to the halogen-based flame retardant, a polyhedral composite metal hydroxide represented by the following general formula (9) can be used. This composite metal hydroxide has a polyhedral crystal shape and has a conventional hexagonal plate shape, or a so-called thin plate-like crystal shape such as a scale-like shape. Rather, the crystal growth in the thickness direction (c-axis direction) is large both vertically and horizontally. Crystal shape, for example, approximately dodecahedron, approximately octahedron,
A composite metal hydroxide having a shape such as a substantially tetrahedron.

[0037]

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Regarding the composite metal hydroxide represented by the general formula (9), M representing the metal element in the formula (9) is represented by Al, Mg, Ca, Ni, Co, Sn, Zn, C
u, Fe, Ti, B and the like.

The Q representing another metal element in the composite metal hydroxide represented by the general formula (9) is, for example, Fe, Co, Ni, Pd, Cu, Zn or the like. Selected alone or in combination of two or more.

Such a composite metal hydroxide having a polyhedral crystal shape can be obtained, for example, by controlling various conditions in the production process of the composite metal hydroxide.
Obtaining a composite metal hydroxide having a desired polyhedral shape, such as a substantially dodecahedral, a substantially octahedral, or a substantially tetrahedral shape, in which crystal growth in the thickness direction (c-axis direction) is large both vertically and horizontally. And usually consists of these mixtures.

Specific examples of the composite metal hydroxide having the polyhedral shape include hydrates of magnesium oxide / nickel oxide, hydrates of magnesium oxide / zinc oxide, and hydrates of magnesium oxide / copper oxide. Japanese products.

The composite metal hydroxide having the polyhedral shape includes a particle size distribution (α) shown below.
It is preferable to have (γ). In addition, a laser type particle size analyzer is used for the measurement of the particle size distribution shown below. (Α) 10 to 35% by weight having a particle size of less than 1.3 μm. (Β) 50 to 65 particles having a particle size of less than 1.3 to 2.0 μm
weight%. (Γ) 10 to 30% by weight having a particle size of 2.0 μm or more.

The aspect ratio of the composite metal hydroxide having the polyhedral shape is usually 1 to 8, preferably 1 to 8.
To 7, particularly preferably 1 to 4. The term “aspect ratio” as used herein refers to the ratio of the major axis to the minor axis of the composite metal hydroxide. That is, when the aspect ratio exceeds 8, the effect of lowering the viscosity when the epoxy resin composition containing the composite metal hydroxide is melted becomes poor. When used as a component of the epoxy resin composition for semiconductor encapsulation of the present invention, one having an aspect ratio of 1 to 4 is generally used.

The coupling agent may be γ-
Glycidoxypropyltrimethoxysilane, β- (3,
Silane coupling agents such as 4-epoxycyclohexyl) ethyltrimethoxysilane.

In the epoxy resin composition for semiconductor encapsulation of the present invention, the total value (X + Y) of the epoxy equivalent X of the epoxy resin (component A) and the hydroxyl equivalent Y of the phenol resin (component B) is 350 or more. As such, it is preferable to use a combination of an epoxy resin and a phenol resin. In particular, a combination in which the total value (X + Y) of the epoxy equivalent X and the hydroxyl equivalent Y is 400 or more is preferable. The upper limit of the total value (X + Y) of the epoxy equivalent X and the hydroxyl equivalent Y is usually about 2000. That is,
This is because the effect of further reducing the relative dielectric constant of the cured epoxy resin composition can be obtained by using a combination such that the total value (X + Y) becomes 350 or more. In the combination of the epoxy resin (component A) and the phenol resin (component B), the total value of the epoxy equivalent and the hydroxyl equivalent is particularly high, and a sufficient effect of reducing the relative dielectric constant can be obtained. It is preferable to use a combination of the epoxy resin represented by the formula (1) and the phenol resin represented by the formula (2). When two or more epoxy resins as the component A are used in combination, the weight average value of the epoxy equivalents of the plurality of epoxy resins becomes the epoxy equivalent X, and two or more of the phenol resins as the component B are used in combination. In this case, the weight average value of the hydroxyl equivalents of the plurality of phenol resins is the above-mentioned hydroxyl equivalent Y. The epoxy equivalent and the hydroxyl equivalent are each represented by g / eq. In the present invention, the total value (X + Y) of the epoxy equivalent X and the hydroxyl equivalent Y does not include the epoxy equivalent of the epoxy resin used as a flame retardant such as the brominated epoxy resin described above.

The epoxy resin composition for semiconductor encapsulation of the present invention can be produced, for example, as follows. That is, the epoxy resin (A component), the phenol resin (B component), and the polyvalent cyanate ester compound (C
Component), a curing accelerator (D component) and an inorganic filler (E
Component) and, if necessary, other additives in a predetermined amount, and after sufficiently melting and dispersing using a hot roll, an extruder, a kneader or the like, cooling, pulverizing, and optionally compression-molding into a tablet. , A desired epoxy resin composition can be produced.

The encapsulation of the semiconductor element using the epoxy resin composition thus obtained is not particularly limited, and can be performed by a known molding method such as ordinary low pressure transfer molding.

The semiconductor device obtained in this manner is characterized in that, in the epoxy resin composition used as the sealing resin composition, the hydroxyl group equivalent of the phenol resin and the polyvalent cyanate ester compound are equivalent to 1 equivalent of the epoxy group of the epoxy resin. Since the cyanate ester groups are blended so that each has a specific ratio, an epoxy resin composition having a short gelation time is obtained, and the epoxy resin composition has a low dielectric constant in which the relative dielectric constant is significantly reduced. The semiconductor device has high frequency characteristics.

Next, examples will be described together with comparative examples.

First, the following components were prepared.

[Epoxy resin a] An epoxy resin represented by the following formula (a) (epoxy equivalent: 195 g / eq, softening point: 74 ° C.)

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[Epoxy resin b] An epoxy resin represented by the following formula (b) (epoxy equivalent: 192 g / eq, melting point: 107 ° C.)

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[Epoxy resin c] An epoxy resin represented by the following formula (c) (epoxy equivalent: 273 g / eq, softening point: 61 ° C.)

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[Epoxy resin d] An epoxy resin represented by the following formula (d) (epoxy equivalent 290, softening point 95
℃)

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[Phenol resin a] A phenol resin represented by the following formula (a) (hydroxyl equivalent 106 g / eq, softening point 82 ° C.)

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[Phenol resin b] A phenol resin represented by the following formula (b) (hydroxyl equivalent 162 g / eq, softening point 60 ° C.)

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[Phenol resin c] A phenol resin represented by the following formula (c) (hydroxyl equivalent 170 g / eq, softening point 70 ° C.)

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[Phenol resin d] Phenol resin represented by the following formula (d) (hydroxyl equivalent 208 g / eq, softening point 69 ° C.)

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[Polyvalent cyanate ester compound] A partially trimerized compound of the compound represented by the following formula (e) [cyanate ester equivalent: 199, trimerization ratio: 30%, viscosity: 450
mPa · s (82 ° C)]

[0060]

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[Curing accelerator] Triphenylphosphine

[Silica Powder] Spherical fused silica powder (maximum particle size 96 μm, average particle size 15 μm)

[Flame retardant] Brominated phenol novolak type epoxy resin (epoxy equivalent: 280)

[Flame retardant aid] Antimony trioxide

[Release Agent] Carnauba Wax

[Pigment] Carbon black

[Silane coupling agent] β- (3,4-
Epoxycyclohexyl) ethyltrimethoxysilane

[0068]

Examples 1 to 6 and Comparative Examples 1 to 6 The respective raw materials shown in the following Tables 1 and 2 were simultaneously blended in the proportions shown in the same table, and were melted and kneaded for a short time with a hot roll heated to 95 ° C. The kneading time is shown in Tables 1 and 2 below).
A powdered epoxy resin composition having a mesh pass was obtained.

[0069]

[Table 1]

[0070]

[Table 2]

Using the powdered epoxy resin compositions of Examples and Comparative Examples thus obtained, gel time, relative dielectric constant and glass transition temperature were measured according to the following methods. The results are shown in Tables 3 and 4 below.

[Geling time] The gelling time of each of the above powdered epoxy resin compositions was measured as follows. That is, after kneading the above-mentioned powdered epoxy resin composition with a hot roll, cooling and pulverizing the mixture, 0.2 to 0.5 g of the powdered epoxy resin composition having a 10-mesh pass was added at 175 ± 1 ° C.
And then thinly stretched while melting. Then, the measurement by the stopwatch was started when the entire sample was melted, and when the fluidity disappeared, the measurement by the stopwatch was terminated, and the time during that period was read. The above operation was performed at least twice using the same sample, and the measurement was performed. The average value was defined as the gel time.

[Measurement of Relative Dielectric Constant] After transfer molding using the above-mentioned powdered epoxy resin compositions under the conditions of a molding pressure of 686 × 10 ⁴ Pa, a mold temperature of 175 ° C., and a molding time of 2 minutes, post-curing was performed. Was carried out at 175 ° C. for 5 hours to prepare a disc-shaped cured product having a thickness of 3 mm and a diameter of 50 mm. Then, the diameter of the main electrode is 30 m using silver paste.
m, guard electrode diameter 32 mm, counter electrode diameter 45 m
m, a measurement frequency of 1 MHz and a temperature of 2
The capacitance of the cured product was measured at 5 ° C., and the relative dielectric constant was calculated by the following equation.

[0074]

(Equation 1)

[Glass Transition Temperature] A cured product having a length of 20 mm × a width of 3 mm × a thickness of 3 mm was prepared by transfer molding in the same manner as described above using each of the above powdered epoxy resin compositions, and after 5 hours at 175 ° C. The glass transition temperature after curing was measured at a heating rate of 5 ° C./min using a thermomechanical analyzer (TMA device manufactured by Rigaku Corporation, model number: MG800GM). The results are shown in Tables 3 and 4 below.

[0076]

[Table 3]

[0077]

[Table 4]

As shown in Tables 3 and 4, all the products of Examples were short in gelation time and low in dielectric constant. In particular, in Examples 1 to 3 and 5 in which the total value of the epoxy equivalent and the hydroxyl equivalent was 350 or more, the effect of reducing the relative dielectric constant was remarkable. Also, the glass transition temperature was not a remarkably inferior value as a cured product of the epoxy resin composition for semiconductor encapsulation. On the other hand, the products of Comparative Examples 1 and 4 had a short gelation time, but had a high relative dielectric constant. In Comparative Examples 2, 3, 5, and 6, the relative permittivity was low, but the gelation time was long. As described above, in the comparative example, a product satisfying both the achievement of a short gelation time and the low dielectric constant was not obtained.

[0079]

As described above, the present invention sets the hydroxyl group of the phenolic resin and the cyanate ester group of the polyvalent cyanate ester compound to have a specific equivalent ratio with respect to one equivalent of the epoxy group of the epoxy resin. And an epoxy resin composition for semiconductor encapsulation. Therefore, a material having a low dielectric constant with a reduced relative dielectric constant and a short gelation time can be obtained. Therefore, a semiconductor device encapsulated with the epoxy resin composition for semiconductor encapsulation has excellent high-frequency characteristics corresponding to high frequencies.

Further, by setting the total value of the epoxy equivalent of the epoxy resin and the hydroxyl equivalent of the phenol resin to be a specific value or more, the relative dielectric constant can be further reduced.

When the specific epoxy resin represented by the formula (1) is used as the epoxy resin and the specific phenol resin represented by the formula (2) is used as the phenol resin in combination. The relative permittivity of the cured epoxy resin composition is further reduced.

Thus, the semiconductor device of the present invention has the conventional features of being excellent in various kinds of reliability and mass productivity and being inexpensive, and has a resin encapsulation that can handle a high frequency. Semiconductor device, which can be said to be an excellent alternative to the conventional ceramic encapsulated semiconductor device.

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Claims (4)

[Claims] 1. An epoxy resin composition for encapsulating a semiconductor, comprising the following components (A) to (E) as essential components, wherein said epoxy resin composition (B) is equivalent to 1 equivalent of the epoxy group of said component (A). The hydroxyl group of the component is adjusted to 1.02 to 1.20 equivalents, and the epoxy group of the component (A) is equivalent to 1 equivalent of the epoxy group.
An epoxy resin composition for encapsulating a semiconductor, wherein the cyanate ester group of the component is set at an equivalent ratio of 0.10 to 1.00 equivalent. (A) Epoxy resin. (B) a phenolic resin. (C) Polyvalent cyanate ester compound. (D) a curing accelerator. (E) an inorganic filler. 2. The total value (X + Y) of the epoxy equivalent X of the epoxy resin as the component (A) and the hydroxyl equivalent Y of the phenol resin as the component (B) is set to be 350 or more. 2. The epoxy resin composition for semiconductor encapsulation according to 1. 3. The epoxy resin as the component (A),
The semiconductor encapsulation according to claim 1 or 2, wherein the epoxy resin is represented by the following formula (1), and the phenol resin as the component (B) is a phenol resin represented by the following formula (2). Epoxy resin composition for use. Embedded image Embedded image 4. A semiconductor device comprising a semiconductor element encapsulated by using the epoxy resin composition for semiconductor encapsulation according to claim 1.