JP2001168004A - Wafer treating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wafer treating device capable of efficiently conveying a wafer and further to prevent liquid treatment unit from being affected by the heat of a heat treatment unit. SOLUTION: A wafer treating device 1 is provided with a first treatment unit group U1 for applying a first treatment process to a wafer W, a second treatment unit group U2 for applying a second treatment process to the wafer W, and conveying means 81 and 82 for conveying the wafer W to these first and second treatment unit groups U1 and U2. The first treatment unit group U1 is located along with a first conveyance route 21, and the second treatment unit group U2 is located along with a second conveyance route 22. Besides, concerning the first and second treatment unit groups U1 and U2, the liquid treatment unit is located so as not to be affected by the heat of the heat treatment unit.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a substrate processing apparatus for processing a substrate such as a semiconductor wafer or an LCD substrate.

[0002]

2. Description of the Related Art For example, in a lithography technique for manufacturing a semiconductor device, a semiconductor wafer (hereinafter, referred to as "wafer") is used.
That. ) Is transferred to a resist coating unit, and a resist liquid is applied to the surface of the wafer to form a resist film. The wafer is then transferred to an exposure device to expose a predetermined pattern. Next, the wafer on which the pattern has been exposed by the exposure device is transported to a developing unit, and a developing solution is supplied to the surface of the wafer for developing. In performing such a series of processing steps, a substrate processing apparatus has conventionally been used.

Here, a schematic configuration of a conventional substrate processing apparatus will be described. As shown in FIG. 7, a substrate processing apparatus 200 includes a cassette station 201 which can carry in and out a wafer W in units of a cassette C, and a wafer W. Between the processing station 202 that performs a series of processing steps on the wafer W, and the processing station 202 and an exposure apparatus (not shown).
And an interface unit 203 for transmitting and receiving the information. At the center of the processing station 202, a transfer means 204 capable of transferring the wafer W is provided. Around the transfer means 204, for example, heat treatment units 205 and 2 for heating the wafer W at a predetermined temperature.
06 and liquid processing units 207 and 208 for supplying a processing liquid such as a resist liquid or a developing liquid to the wafer W for processing.

[0004] The wafer W extracted from the cassette C in the cassette station 201 is appropriately transferred to the heat treatment units 205 and 206 and the liquid processing units 207 and 208 by the transfer means 204 of the processing station 202 to perform predetermined processing. After that, it is carried into an exposure apparatus (not shown) via the interface unit 203 and subjected to exposure processing. The wafer W subjected to the exposure processing by the exposure device (not shown) is reloaded into the processing station 202 via the interface unit 203, and the heat treatment unit 205,
After being appropriately conveyed to the liquid processing units 206 and the liquid processing units 207 and 208 and subjected to predetermined processing, the cassette station 20
The wafer W is stored in the upper cassette C, and a series of processes on the wafer W is completed.

[0005]

However, in the conventional substrate processing apparatus 200, the heat treatment units 205, 20
When the wafer W is transferred to the liquid processing units 6 and the liquid processing units 207 and 208, the transfer of the wafer W before the exposure processing and the transfer of the wafer W after the exposure processing may intersect, and the transfer of the wafer W may not be performed smoothly. . Therefore, it is not always possible to efficiently transfer the wafer W, and there is a possibility that the transfer of the wafer W is delayed and the number of processed wafers W is reduced.

In the conventional substrate processing apparatus 200, the heat generated from the heat treatment units 205 and 206 may be transmitted to the liquid processing units 207 and 208, so that the liquid processing unit 207 may perform, for example, a temperature-sensitive resist coating process. In the case of a unit or a development processing unit, the thickness of a resist film or the like formed on the surface of the wafer W cannot be accurately controlled by the influence of heat generated from the heat treatment units 205 and 206, or the development processing is affected. May be exerted.

Accordingly, an object of the present invention is to provide a substrate processing apparatus capable of efficiently transporting a substrate, and further, in such a substrate processing apparatus, to prevent the heat of the heat treatment unit from affecting the liquid processing unit. It is in.

[0008]

According to a first aspect of the present invention, there is provided a first processing unit group for performing a first processing step on a substrate, and a second processing unit group for performing a first processing step on the substrate. A second processing unit group for performing the above-mentioned processing steps, and a transfer means for transferring a substrate to the first processing unit group and the second processing unit group. The processing unit group is arranged along a first transport path, and the second processing unit group is arranged along a second transport path.

In the substrate processing apparatus according to the first aspect, the substrate is, for example, a semiconductor wafer or an LCD substrate. In addition, a first processing step of performing a first processing step on the substrate is performed.
The processing unit group includes, for example, various heat treatment units and various liquid processing units for forming a resist film or the like on the surface of the substrate. The second processing unit group for performing the second processing step on the substrate includes, for example, various heat treatment units and various liquid processing units for developing the resist film on the surface of the substrate.

In the substrate processing apparatus according to the first aspect, first, the substrate is transported along the first transport path.
The first processing step is performed on the substrate in the processing unit group. Then, the substrate that has completed the first processing step is transported along the second transport path, and the second processing unit group performs the second processing step on the substrate. In this case, the substrate that has been subjected to the first processing step in the first processing unit group is carried into, for example, an exposure apparatus or the like and subjected to exposure processing. May be performed.

According to the substrate processing apparatus of the first aspect, the first processing unit group for performing the first processing step on the substrate and the second processing unit for performing the second processing step on the substrate. Since the processing unit group is separately arranged along the first transfer path and the second transfer path, the transfer of the substrate performing the first processing step and the second processing step are performed. The transfer of the existing substrate is not mixed, and the transfer of the substrate is performed smoothly, so that the transfer can be performed efficiently.

In the substrate processing apparatus according to the present invention, the first processing unit group and / or the second processing unit group supply a processing liquid to the substrate. And a heat treatment unit for heating the substrate at a predetermined temperature, and the liquid treatment unit is preferably arranged at a position not affected by the heat of the heat treatment unit. By doing so, the influence of heat from the heat treatment unit on the liquid processing unit can be prevented. For example, when a resist film or the like is formed on the substrate surface by the liquid processing unit, the thickness of the resist film or the like can be accurately adjusted. Be able to control. In this case, the liquid processing unit may be disposed separately from the heat treatment unit as described in claim 3, or the liquid processing unit and the heat treatment unit may be disposed as described in claim 4. A heat insulating plate may be provided between the liquid processing unit and the heat treatment unit, and a processing unit other than the liquid processing unit and the heat treatment unit may be disposed between the liquid processing unit and the heat treatment unit. good.

According to a sixth aspect of the present invention, the transfer means includes a first transfer means for transferring the substrate along the first transfer path, and a transfer means for transferring the substrate along the second transfer path. It may be composed of a second transport means for causing the second transport means. Then, the substrate is transported along the first transport path by the first transport means, and the substrate is transported to the second transport means by the second transport means.
The first transfer path and the second transfer path are used to transfer the substrate by different transfer means, thereby achieving the transfer of the substrate in the first processing step. The transfer of the substrate in the second processing step is less likely to intersect, and the transfer of the substrate is performed more smoothly and efficiently.

According to a seventh aspect of the present invention, the first
A space may be formed between the second transfer path and the transfer path. In this case, as described in claim 8, the first transport path and the second transport path sandwich the space.
May be arranged in parallel. Further, as described in claim 9, it is preferable that the space can be freely entered and exited. Then, the operator can enter the space to inspect and maintain the first and second processing unit groups and the substrate transporting means arranged along the first and second transport paths, respectively. And maintenance becomes easier.

[0015]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a schematic plan view of a substrate processing apparatus 1 according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of the processing station 3 viewed from the cassette station 2 side in the PP section in FIG. 1, and FIG. 3 is a processing station 3 viewed from the interface section 4 side in the QQ section in FIG. FIG.

The substrate processing apparatus 1 includes a cassette station 2 for loading and unloading wafers W into and from a cassette C containing a plurality of (for example, 25) wafers W, and extracting from a cassette C placed in the cassette station 2. Processing station 3 for performing a predetermined process on the wafer W
And an interface unit 4 for receiving and transferring the wafer W between an exposure apparatus (not shown) adjacent to the processing station 3.

The cassette C is carried into and out of the cassette station 2 by a transport means such as an AGV (not shown). On the cassette mounting table 5 provided in the cassette station 2, the cassette C is mounted with the entrance of the wafer W facing the processing station 3. In this embodiment, a plurality of cassettes C are mounted on the cassette mounting table 5. Can be placed side by side in the X direction (vertical direction in FIG. 1). In the cassette C, a plurality of wafers W in a horizontal posture are arranged in parallel in a vertical direction (Z direction) at predetermined regular intervals. Further, the wafer carrier 6 which can move up and down to each height of the wafers W stored in the cassette C and which can move back and forth is arranged in the direction of the cassette C (X direction).
(Direction) can be moved along the transport rail 7 provided in the direction (1). Then, the wafer carrier 6 is selectively moved in front of each cassette C placed on the cassette mounting table 5, and the wafer carrier 6 is moved forward and backward and ascends and descends appropriately, so that one wafer W is loaded from the cassette C. The wafers W can be taken out one by one and stored in the cassette C one by one. The wafer carrier 6 is also configured to be rotatable in the θ direction (rotational direction about the Z direction), and an extension unit 53 of the heat treatment unit 30, an extension cooling unit 60 and an extension unit of the heat treatment unit 39 described later. The wafer W can also be carried in and out of the wafer 61.

At the center of the processing station 3 is a space 2
0 is formed, and the space 20 has a size that allows an operator to enter, for example. In the processing station 3, a first transfer path 21 from the cassette station 2 to the interface section 4 and a second transfer path 22 from the interface section 4 to the cassette station 2 are formed with the space 20 interposed therebetween. I have. Then, in the processing station 3, a first processing unit group U1 in which a heat treatment unit 30, a cooling treatment unit 31, a film forming unit 32, a cooling treatment unit 33, and a heat treatment unit 34 are sequentially arranged along the first transfer path 21, Along the second transport path 22, the heat treatment section 35, the cooling processing section 36, the development processing section 3
7, a second processing unit group U2 in which cooling processing sections 38 and heat treatment sections 39 are sequentially arranged is formed.

As shown in FIG. 1, in the first processing unit group U1, the heat treatment sections 30 and 34 are both arranged at positions away from both sides of the film formation section 32, and A cooling section 31 is disposed between the heat treatment section 30 and the heat treatment section 30, and a cooling section 33 is disposed between the film forming section 32 and the heat treatment section 34. Similarly, in the second processing unit group U2, both of the heat treatment sections 35 and 39 are disposed at positions away from both sides of the development processing section 37, and the development processing section 37
A cooling processing unit 36 is disposed between the heat treatment unit 36 and the heat treatment unit 36, and a cooling processing unit 38 is disposed between the development processing unit 37 and the heat treatment unit 39.

The film forming section 32 includes an antireflection film forming unit 41 for forming an antireflection film on the surface of the wafer W accommodated in the cup CP, and a resist coating for forming a resist film on the wafer W accommodated in the cup CP. A processing unit 42 is provided. The anti-reflection film forming units 41 are stacked in three stages on the cassette station 2 side, and the resist coating processing units 42 are stacked in three stages on the interface unit 4 side. . On the other hand, the development processing unit 37
Has a configuration in which a development processing unit 43 for supplying a developer to the surface of the wafer W accommodated in the cup CP for processing is provided, and the development processing units 43 are stacked in two stages and arranged in two rows.

The heat treatment section 30 provided on the cassette station 2 side in the first processing unit group U1
An extension cooling unit 50 for cooling the wafer W in a standby state, an adhesion unit 51 for hydrophobizing the wafer W, an alignment unit 52 for aligning the wafer W, an extension unit 53 for waiting the wafer W, 53 and pre-baking units 54, 54, 54, 54, 54 for heating the wafer W after the resist coating processing are stacked in ten stages from the bottom. The heat treatment section 39 provided on the cassette station 2 side in the second processing unit group U2 includes extension cooling units 60, 60 and extension units 61, 61.
And post-baking units 62, 62, 62, 62, 62, 62 for heating the wafer W after the development processing are stacked in ten stages from the bottom.

In the first processing unit group U1, the heat treatment section 34 provided on the interface section 4 side includes extension cooling units 65, 65, 65.
, Extension units 66, 66, and pre-baking units 67, 67, 67, 67, 67 are stacked in ten stages from the bottom. In the second processing unit group U2, the heat treatment section 35 provided on the interface section 4 side includes extension units 70, 70 and post-exposure baking units 71, 71 for heating the exposed wafer W.
71, 71, 71 and a post-baking unit 72,
72, 72 are stacked in ten stages from the bottom.

In each of the cooling units 31, 33, 36, and 38, three cooling units 75 for cooling the wafer W are stacked.

Then, around the film forming section 32, the above-mentioned various heat treating units (adhesion unit 51, pre-baking unit 54 and pre-baking unit 67) provided in the heat-treating sections 30 and 34.
A heat insulating plate 45 is provided to block the transmission of heat generated from the heat sink. Similarly, the heat generated from the above-described various heat treatment units (post exposure baking unit 71, post baking unit 72, and post baking unit 62) provided in heat treatment unit 35 and heat treatment unit 39 around development processing unit 37. Is provided with a heat insulating plate 46 for blocking transmission.

On both sides of the space 20, the first transport means 8
The two transport mechanisms 81A and 81B as 1 and the two transport mechanisms 82A and 82B as the second transport unit 82
Each is arranged side by side. Each of the transport mechanisms 81A, 81B, which constitute these first and second transport means 81, 82,
Each of the transfer mechanisms 81A and 82B has basically the same structure. If the structure of the transfer mechanism 81A is described with reference to FIG. 4, the transfer mechanism 81A is connected at the upper end and the lower end to each other, and faces each other. Cylindrical support 8 composed of walls 85 and 86 of
7, a wafer transfer mechanism 88 that can move up and down in the vertical direction (Z direction) is provided. The cylindrical support 87 has a motor 89.
The rotation of the motor 89 causes the wafer transfer mechanism 8 to rotate about the rotation axis of the motor 89.
8 rotates integrally with the cylindrical support 87. As a result, the wafer transfer mechanism 88 can move up and down and rotate in the θ direction.

The transfer base 90 of the wafer transfer mechanism 88 has
Three tweezers 91, 92, 93 for holding the wafer W
Are provided at the top, middle, and bottom. These tweezers 91, 92, and 93 have basically the same configuration, and have a shape and size that allow them to pass through the side opening 94 of the cylindrical support 87. Also, tweezers 91 and 9
The motors 2 and 93 can be moved forward and backward by a motor (not shown) built in the transfer base 90.
Although the configuration of the transport mechanism 81A has been described as a representative, the other transport mechanisms 81B, 82A, and 82B have the same configuration as the transport mechanism 81A.

In the transfer mechanism 81A, the wafer transfer mechanism 88 is appropriately moved up and down and rotated in the θ direction, and the tweezers 91, 92 and 93 are moved forward and backward as appropriate, so that the heat treatment section 30 and the cooling processing section described above are performed. 31 and film forming part 32
Is configured to be able to transfer the wafer W. In the transport mechanism 81B, the film forming section 32 described above,
The wafer W is configured to be transferred to the cooling processing unit 33 and the heat treatment unit 34. Similarly, the transfer mechanism 82A is configured so that the wafer W can be transferred to the heat treatment section 35, the cooling processing section 36, and the development processing section 37 described above. Further, the transfer mechanism 82B is configured to be able to transfer the wafer W to the development processing unit 37, the cooling processing unit 38, and the heat treatment unit 39 described above.

In the first transport means 81, the transport mechanism 8
A wafer mounting table 95 on which the wafer W can be mounted is provided between 1A and the transfer mechanism 81B. Similarly, in the second transfer means 82, the transfer mechanism 82A and the transfer mechanism 8
2B, a wafer mounting table 96 similar to the wafer mounting table 95 is provided. The transfer mechanism 81A mounts the wafer W, which has been appropriately transferred and processed to the heat treatment unit 30, the cooling processing unit 31, and the film forming unit 32, on the wafer mounting table 95. Further, the transfer mechanism 81B receives the wafer W thus placed on the wafer mounting table 95, and appropriately transfers the wafer W to the film forming unit 32, the cooling unit 33, and the heat treatment unit 34. Similarly, the transfer mechanism 82 </ b> A mounts the wafer W that has been appropriately transferred and processed to the heat treatment unit 35, the cooling processing unit 36, and the development processing unit 37 on the wafer mounting table 96. Further, the transfer mechanism 82B receives the wafer W thus placed on the wafer mounting table 96, and executes the developing processing unit 37, the cooling processing unit 38, and the heat treatment unit 3.
9, the wafer W is appropriately transferred. As described above, the first transfer unit 81 includes the heat treatment unit 30 and the cooling unit arranged along the first transfer path 21 described above while appropriately inheriting the wafer W by the two transfer mechanisms 81A and 81B. 31, a film forming part 32, a cooling processing part 33, and a heat treatment part 34
The wafer W is transported to the wafer. In addition, the second transfer means 82 is provided with the heat treatment unit 35, the cooling processing unit 36, and the development unit arranged along the above-described second transfer path 22 while appropriately inheriting the wafer W by the two transfer mechanisms 82A and 82B. The wafer W is transferred to the processing section 37, the cooling processing section 38, and the heat treatment section 39.

Next, a mounting table 98 on which the wafer W can be mounted is provided substantially at the center of the interface section 4, and the first sub-transporting means 99 and the second sub-transporting means 99 are sandwiched by the mounting table 98. Transport means 100 is arranged. The first sub-transporting means 99 includes a heat treatment section 34 provided at the processing station 3.
In the extension unit 66, the mounting table 98, the peripheral exposure device 101 for exposing the peripheral portion of the wafer W provided in the interface section 4, and the cassette C arranged adjacent to the peripheral exposure device 101, W can be loaded and unloaded. On the other hand, the second sub-transporting means 100
The wafer W can be loaded and unloaded to and from the mounting table 98, the inspection device 102 that detects a defective wafer W such as an exposure abnormality, and the extension unit 70 of the heat treatment unit 35 provided in the processing station 3.

FIG. 5 is a side view of the interface unit 4 as viewed from the opposite side of the processing station 3. The interface section 4 includes a first sub-transporting means 99 and a second sub-transporting means 10.
Between 0 and 0, a tunnel passage portion 103 located below the mounting table 98 is formed. The tunnel passage section 103 has a size that allows a worker to pass through.
The worker can enter and exit the space 20 formed at the center of the space. Further, a door 104 that can be opened and closed is attached to the tunnel passage section 103.

In the substrate processing apparatus 1 according to the embodiment of the present invention configured as described above, for example, two
When a cassette C containing five unprocessed wafers W is placed, the wafer carrier 6 moves the wafer W from the cassette C
Take out one sheet. Then, the taken out wafer W
Is transported to the extension unit 53 of the heat treatment unit 30 provided in the processing station 3. The wafer W transferred to the processing station 3 in this manner is thereafter processed by the first transfer means 81, the heat treatment section 30, the cooling processing section 31, and the film formation section 3 arranged along the first transfer path 21.
2, transported appropriately to the cooling processing unit 33 and the heat treatment unit 34,
The processing is performed in the first processing unit group U1.

That is, the heat treatment section 3 is
The wafer W carried into the extension unit 53 of the heat treatment unit 30 is first carried into the alignment unit 52 of the heat treatment unit 30 by the transfer mechanism 81A and aligned, and then the adhesion unit 51 is transferred by the transfer mechanism 81A.
And subjected to a hydrophobic treatment. Next, the transport mechanism 8
1A, the wafer W is carried into the cooling processing unit 75 of the cooling processing unit 31 and subjected to the cooling processing.
A, the anti-reflection film forming unit 41 of the film forming section 32
And an anti-reflection film is formed on the surface of the wafer W in the cup CP.

Next, the wafer W on which the antireflection film is formed
Is the anti-reflection film forming unit 41 by the transport mechanism 81A.
Is transferred to the wafer mounting table 95 and mounted thereon. Thereafter, the wafer W mounted on the wafer mounting table 95 is transferred to the transfer mechanism 8.
1B, it is carried into the resist coating unit 42 of the film forming unit 32. Then, a resist liquid is applied to the surface of the wafer W in the cup CP of the resist coating unit 42, and a resist film is further formed on the upper surface of the antireflection film. The wafer W on which the resist film is formed is transferred to the transfer mechanism 8
1B, the pre-baking unit 6 of the heat treatment section 34
2 and heat-treated.

The wafer W that has been subjected to the heat treatment in the pre-baking unit 62 is transferred by the transfer mechanism 81B to the cooling processing unit 75 of the cooling processing section 33 and cooled to a predetermined temperature. After that, the wafer W is transferred by the transfer mechanism 81B to the extension cooling unit 65 or the extension unit 66 of the heat treatment unit 34, and stands by there.

Next, the wafer W is taken out of the extension cooling unit 65 or the extension unit 66 of the heat treatment section 34 by the first sub-transporting means 99, carried into the peripheral exposure apparatus 101, and
Unnecessary resist film in the peripheral portion is removed. Next, the wafer W is transferred to an exposure apparatus (not shown) as another processing apparatus and then exposed.

The wafer W that has been subjected to predetermined exposure processing by an exposure device (not shown) is transferred to the mounting table 98 by the first sub-transfer means 99. Then, the wafer W mounted on the mounting table 98 is transferred by the second sub-transfer means 100 and is loaded into the extension unit 70 of the heat treatment section 35 provided in the processing station 3.

It is to be noted that the wafer W is extracted from the wafer W conveyed by the second sub-transfer means 102 at regular intervals, for example, and transferred to the inspection device 102 for inspection. As a result, the wafer W having an abnormality such as a pattern not formed in a predetermined line width is inspected by the inspection apparatus 1.
02, a spot inspection can be performed.

Next, the wafer W transported to the extension unit 70 of the thermal processing section 35 is then processed by the second transporting means 82 to the thermal processing section 35 and the cooling processing section arranged along the second transport path 22. 36, a developing section 37,
It is appropriately transported to the cooling processing unit 38 and the heat treatment unit 39,
Are processed in the processing unit group U2.

That is, first, the wafer W is transferred from the extension unit 70 of the heat treatment section 35 to the post-exposure baking unit 71 by the transfer mechanism 82A, and subjected to a heat treatment after the exposure processing. Thereafter, the wafer W is transferred from the post-exposure baking unit 71 to the cooling processing unit 75 of the cooling processing unit 36 by the transfer mechanism 82A, and is cooled to a predetermined temperature.

The wafer W cooled by the cooling unit 75 is transferred by the transfer mechanism 82A to the developing unit 43 provided in the developing unit 37, where a predetermined developing process is performed. Next, the wafer W is transferred to the transfer mechanism 82.
A transports and mounts the wafer on the wafer mounting table 96. Thereafter, the wafer W mounted on the wafer mounting table 96 is received by the transfer mechanism 82B and transferred to the post-baking unit 62 of the heat treatment section 39. Then, heat treatment is performed in the post-baking unit 62.

Next, the wafer W that has been subjected to the heat treatment in the post-baking unit 62 is carried into the cooling processing unit 75 of the cooling processing unit 38 by the transfer mechanism 82B and is cooled. The wafer W having completed the cooling process is transferred to the extension cooling unit 60 or the extension unit 61 of the heat treatment section 39 by the transfer mechanism 82B.

Thereafter, the wafer W is heated by the heat treatment section 39 by the wafer carrier 6 provided in the cassette station 2.
Is taken out of the extension cooling unit 60 or the extension unit 61 and transported, and is stored in the cassette C on the cassette mounting table 5. Thus, a series of substrate processing for the wafer W is completed.

Thus, in the substrate processing apparatus 1 of this embodiment, before the exposure processing, the heat treatment section 30, the cooling processing section 31, the film forming section 32, and the cooling section arranged along the first transport path 21. The wafer W is appropriately transferred to the processing unit 33 and the heat treatment unit 34 by the first transfer unit 81. On the other hand, after the completion of the exposure processing, the heat treatment units 35 arranged along the second transfer path 22 Since the wafer W is appropriately transferred to the processing unit 36, the development processing unit 37, the cooling processing unit 38, and the heat treatment unit 39 by the second transfer unit 82,
The transfer of the wafer W before the exposure processing and the transfer of the wafer W after the exposure processing are not complicated, and the wafer W can be transferred efficiently. Particularly, in this embodiment, the transport path 2
1 and a second transfer means 82 for transferring the wafer W along the second transfer path 22 are separately provided, so that the wafers W before and after the exposure processing are provided. The burden of the first and second transport means 81 and 82 can be reduced by separately burdening the transport.

In the first processing unit group U1,
The film forming unit 32 is disposed at a position away from any of the heat treatment units 30 and 34, and the film formation unit 32 and the heat treatment unit 3
Since the cooling processing unit 31 and the cooling processing unit 33 are arranged between 0 and 34, the film forming unit 32 includes
4 does not have to be affected by the heat generated from each heat treatment unit, and the anti-reflection film and the resist film are formed to a desired thickness in the anti-reflection film forming unit 41 and the resist coating unit 42 provided in the film forming unit 32. Can be formed. Similarly, in the second processing unit group U2, the development processing unit 37 includes the heat treatment units 35, 3
9 does not have to be affected by the heat generated from each of the heat treatment units, and the development processing unit 43 provided in the development processing unit 37 can suitably perform the development processing sensitive to a change in temperature. . In particular, in this embodiment, since the heat insulating plate 45 is provided around the film forming unit 32 and the heat insulating plate 46 is provided around the developing unit 37, the heat is supplied to the film forming unit 32 and the developing unit 37 from outside. It is possible to further eliminate the effects of heat.

Further, in the substrate processing apparatus 1 of this embodiment, an operator can enter the space 20 through the tunnel passage 103. For this reason, the worker is in the space 2
0, and from the inside of the processing station 3, the first and second transport units 81 and 82 and the first and second processing unit groups U1,
U2 and the like can be easily inspected and maintained.

Although the preferred embodiment of the present invention has been described above, the present invention is not limited to the above-described embodiment. FIG. 6 is a schematic plan view of a substrate processing apparatus 1 'according to another embodiment of the present invention. In this embodiment, the first transport path 21 and the second
Are formed in parallel with each other.

In this embodiment, the first transfer means 81 includes a transfer base 111 movable along a rail 110 arranged in parallel with the first transfer path 21. The heat treatment unit 30, the cooling processing unit 31, the film forming unit 32, the cooling processing unit 33, and the heat treatment unit 34, which can be moved up and down and are arranged along the first transport path 21, on the 111.
Tweezers 112 configured to be able to move forward and backward are mounted. The second transfer means 82 includes a transfer base 116 movable along a rail 115 arranged in parallel with the second transfer path 22. The transfer base 116 is movable up and down on the transfer base 116. The heat treatment section 35, the cooling processing section 36, the development processing section 37, and the heat treatment section 35 arranged along the second transport path 22
Tweezers 117 configured to be able to advance and retreat with respect to the cooling processing unit 38 and the heat treatment unit 39 are mounted. As a result, the first transfer means 81 moves the transfer base 111 to the rail 11.
0, and the tweezers 112 move up and down and move up and down as appropriate, so that the heat treatment unit 30, the cooling unit 31, and the film forming unit 3 arranged along the first transport path 21 are arranged.
2. The wafer W is transferred to the cooling processing unit 33 and the heat treatment unit 34. Similarly, the second transfer unit 82 is configured such that the transfer base 116 is appropriately moved along the rail 115, and the tweezers 117 is appropriately moved up and down and moved up and down. Thereby, the wafer W is transferred to the heat treatment unit 35, the cooling processing unit 36, the development processing unit 37, the cooling processing unit 38, and the heat treatment unit 39 arranged along the second transfer path 22.

It should be noted that the first transport path 21 and the second transport path 22 are formed in parallel,
The substrate processing apparatus 1 ′ shown in FIG. 6 is different from the substrate processing apparatus 1 ′ shown in FIG. 6 in that each of the transfer bases 111 and 116 is moved along one of the transfer bases 111 and 116 along the rails 110 and 115. Basically, it has a configuration substantially similar to that of the substrate processing apparatus 1 described above with reference to FIGS. Therefore, in the substrate processing apparatus 1 'shown in FIG. 6, the same components as those of the substrate processing apparatus 1 described in FIGS.

In the substrate processing apparatus 1 'shown in FIG. 6, similarly to the substrate processing apparatus 1 described above with reference to FIGS. 1 to 5, the transfer of the wafer W before the exposure processing and the transfer of the wafer W after the exposure processing are performed. The wafer W can be efficiently transferred without complicated transfer, and the film forming unit 32 and the developing unit 37
It is possible to eliminate the influence of heat from the outside on the surface.
Further, the worker can easily enter and inspect the first and second transport means 81 and 82 and the first and second processing unit groups U1 and U2 from the inside of the processing station 3 by entering the space portion 20. . In addition, according to the substrate processing apparatus 1 ′ shown in FIG. 6, the first and second transfer means 81 and 82 each use one of the transfer bases 111 and 116 for the rails 110 and 1.
15, the configuration of the first and second transfer means 81 and 82 can be simplified, and the wafer mounting table 9 can be moved.
5, 96 is also unnecessary.

In the above embodiment, the wafer W is described as an example of the substrate. However, the substrate usable in the present invention is not limited to the wafer W, and may be, for example, an LCD substrate.

[0051]

According to the first to ninth aspects, the transfer of the substrate performing the first processing step and the transfer of the substrate performing the second processing step do not intersect, and the transfer of the substrate can be performed. It can be carried out smoothly and efficiently conveyed. In particular, claim 2
According to the method, the influence of heat from the heat treatment unit on the liquid processing unit can be prevented. For example, when a resist film or the like is formed on the substrate surface by the liquid processing unit, the thickness of the resist film or the like can be accurately adjusted. Be able to control. According to the sixth aspect, the substrate is transported by the first transport path and the second transport path by different transport means, thereby transporting the substrate performing the first processing step and performing the second processing. The transfer of the substrate in the process is less interlaced, and the transfer of the substrate is performed more smoothly and efficiently. According to the seventh aspect, the first and second processing unit groups and the substrate transfer means arranged along the first and second transfer paths are inspected and maintained by a worker entering the space. And maintenance becomes easier.

[Brief description of the drawings]

FIG. 1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of the processing station as viewed from the cassette station side in a cross section taken along line PP in FIG.

FIG. 3 is a cross-sectional view of the processing station as viewed from the interface section side in a QQ cross section in FIG. 1;

FIG. 4 is a perspective view of a transport mechanism.

FIG. 5 is a side view illustrating a configuration of an interface unit in the substrate processing apparatus of FIG. 1;

FIG. 6 is a schematic plan view of a substrate processing apparatus according to another embodiment of the present invention.

FIG. 7 is a schematic plan view of a conventional substrate processing apparatus.

[Explanation of symbols]

 C cassette W wafer U1 first processing unit group U2 second processing unit group 1 substrate processing apparatus 2 cassette station 3 processing station 4 interface section 5 cassette mounting table 6 wafer transfer body 20 space section 21 first transfer path 22 first 2 transfer path 30 heat treatment section 31 cooling processing section 32 film forming section 33 cooling processing section 34 heat processing section 35 heat processing section 36 cooling processing section 37 developing processing section 38 cooling processing section 39 heat processing section 81 first transfer means 82 second Transport means 95 Wafer mounting table 103 Tunnel passing section 104 Door

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5F031 CA02 CA05 FA01 FA15 GA03 GA47 GA48 GA49 GA50 MA01 MA06 MA26 MA27 MA30 5F046 CD01 CD05 DA29 JA22 KA07 LA18

Claims (9)

[Claims] A first processing step of performing a first processing step on the substrate;
And a second processing unit group for performing a second processing step on the substrate, and a transport unit for transporting the substrate to the first processing unit group and the second processing unit group. A substrate processing apparatus, wherein the first processing unit group is disposed along a first transport path,
A substrate processing apparatus, wherein the processing unit group is arranged along a second transport path. 2. The first processing unit group and / or the second processing unit group include a liquid processing unit that supplies a processing liquid to a substrate to perform processing, and a heat treatment unit that heats the substrate at a predetermined temperature. 2. The substrate processing apparatus according to claim 1, wherein the liquid processing unit is provided at a position not affected by heat of the heat treatment unit. 3. The substrate processing apparatus according to claim 2, wherein said liquid processing unit is disposed apart from said heat treatment unit. 4. A heat insulating plate is provided between the liquid processing unit and the heat treatment unit.
The substrate processing apparatus according to claim 2. 5. The substrate according to claim 2, wherein a processing unit other than the liquid processing unit and the heat treatment unit is disposed between the liquid processing unit and the heat treatment unit. Processing equipment. 6. The transporting means comprises: a first transporting means for transporting the substrate along the first transporting path; and a second transporting means for transporting the substrate along the second transporting path. 7. The method according to claim 1, wherein
Any one of the substrate processing apparatuses. 7. The substrate processing method according to claim 1, wherein a space is formed between said first transfer path and said second transfer path. apparatus. 8. The substrate processing apparatus according to claim 7, wherein the first transfer path and the second transfer path are arranged in parallel with the space portion interposed therebetween. 9. The substrate processing apparatus according to claim 7, wherein said substrate processing apparatus is capable of entering and exiting said space.