JP2001148568A - Manufacturing method of ceramic circuit board - Google Patents
Manufacturing method of ceramic circuit boardInfo
- Publication number
- JP2001148568A JP2001148568A JP32894599A JP32894599A JP2001148568A JP 2001148568 A JP2001148568 A JP 2001148568A JP 32894599 A JP32894599 A JP 32894599A JP 32894599 A JP32894599 A JP 32894599A JP 2001148568 A JP2001148568 A JP 2001148568A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- brazing material
- metal
- ceramic substrate
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 102
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 144
- 239000002184 metal Substances 0.000 claims abstract description 144
- 238000005219 brazing Methods 0.000 claims abstract description 87
- 239000000463 material Substances 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 239000000843 powder Substances 0.000 claims abstract description 46
- 230000008018 melting Effects 0.000 claims abstract description 32
- 238000002844 melting Methods 0.000 claims abstract description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000005304 joining Methods 0.000 claims abstract description 18
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 10
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 150000004678 hydrides Chemical class 0.000 claims abstract description 7
- 239000010936 titanium Substances 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000000945 filler Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 abstract description 5
- 239000000155 melt Substances 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 26
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 229910052759 nickel Inorganic materials 0.000 description 13
- 238000007747 plating Methods 0.000 description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 4
- 229910052863 mullite Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Combinations Of Printed Boards (AREA)
Abstract
(57)【要約】
【課題】セラミック基板に金属回路板をロウ付けするロ
ウ材が熔け広がって、隣接する金属回路板間に電気的な
短絡が生じる。
【解決手段】銀粉末と銅粉末および/または銀−銅合金
粉末から成るロウ材粉末と、チタン、ジルコニウム、ハ
フニウムおよびこれらの水素化物の少なくとも1種より
成る活性金属粉末とから成る活性金属ロウ材と、融点が
1200℃以上の高融点金属粉末を点接合で接合して成
る凝集体2aとを含有するロウ材ペーストを作製すると
ともに該活性金属ロウ材を用いてセラミック基板1上に
金属回路板3をロウ付けする。
(57) Abstract: A brazing material for brazing a metal circuit board to a ceramic substrate melts and spreads, causing an electrical short circuit between adjacent metal circuit boards. An active metal brazing material comprising a brazing material powder comprising silver powder, copper powder and / or silver-copper alloy powder, and an active metal powder comprising at least one of titanium, zirconium, hafnium and hydrides thereof. And a solder paste containing an agglomerate 2a formed by joining a high melting point metal powder having a melting point of 1200 ° C. or more by point joining, to produce a metal circuit board on a ceramic substrate 1 using the active metal brazing material. 3 is brazed.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、セラミック基板に
金属回路板を活性金属ロウ材により接合したセラミック
回路基板の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a ceramic circuit board in which a metal circuit board is joined to a ceramic substrate by an active metal brazing material.
【0002】[0002]
【従来の技術】近年、パワーモジュール用基板やスイッ
チングモジュール用基板等の回路基板として、セラミッ
ク基板上に銀−銅合金にチタン、ジルコニウム、ハフニ
ウムおよびこれらの水素化物の少なくとも1種を添加し
た活性金属ロウ材を介して銅等から成る金属回路板を直
接接合させたセラミック回路基板が用いられている。2. Description of the Related Art In recent years, as a circuit substrate such as a power module substrate or a switching module substrate, an active metal obtained by adding at least one of titanium, zirconium, hafnium and a hydride thereof to a silver-copper alloy on a ceramic substrate. A ceramic circuit board is used in which a metal circuit board made of copper or the like is directly joined via a brazing material.
【0003】かかるセラミック回路基板は、一般に酸化
アルミニウム質焼結体、窒化アルミニウム質焼結体、窒
化珪素質焼結体、ムライト質焼結体等の電気絶縁性のセ
ラミックス材料から成っており、例えば、酸化アルミニ
ウム質焼結体から成る場合には、具体的には以下の方法
によって製作される。Such a ceramic circuit board is generally made of an electrically insulating ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, and a mullite sintered body. When it is made of an aluminum oxide sintered body, it is specifically manufactured by the following method.
【0004】即ち、 (1)まず、銀−銅合金にチタン、ジルコニウム、ハフ
ニウムおよびこれらの水素化物の少なくとも1種を添加
した活性金属粉末に有機溶剤、溶媒を添加混合してロウ
材ペーストを作製する。 (2)次に、酸化アルミニウム、酸化珪素、酸化マグネ
シウム、酸化カルシウム等のセラミック原料粉末に適当
な有機バインダー、可塑剤、溶剤等を添加混合して泥漿
状と成すとともにこれを従来周知のドクターブレード法
やカレンダーロール法等のテープ成形技術を採用して複
数のセラミックグリーンシートを得た後、所定寸法に形
成し、次に前記セラミックグリーンシートを必要に応じ
て上下に積層するとともに還元雰囲気中、約1600℃
の温度で焼成し、セラミックグリーンシートを焼結一体
化させて酸化アルミニウム質焼結体から成るセラミック
基板を形成する。 (3)次に、前記セラミック基板上に前記ロウ材ペース
トを間に挟んで銅等から成る金属回路板を載置させる。 (4)そして最後に、前記セラミック基板と金属回路板
との間に配されているロウ材ペーストを非酸化性雰囲気
中で約900℃の温度に加熱し、セラミック基板に活性
金属粉末を介して銀−銅合金から成るロウ材を接合させ
るとともに該ロウ材を金属回路板に接合させることによ
ってセラミック回路基板が製作される。[0004] (1) First, an organic solvent and a solvent are added to an active metal powder obtained by adding at least one of titanium, zirconium, hafnium and a hydride thereof to a silver-copper alloy to prepare a brazing material paste. I do. (2) Next, a ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide and calcium oxide is mixed with an appropriate organic binder, plasticizer, solvent and the like to form a slurry, which is then formed into a well-known doctor blade. After obtaining a plurality of ceramic green sheets by employing a tape forming technique such as a method or a calendar roll method, forming a predetermined size, and then laminating the ceramic green sheets up and down as necessary, and in a reducing atmosphere, About 1600 ° C
And the ceramic green sheets are sintered and integrated to form a ceramic substrate made of an aluminum oxide sintered body. (3) Next, a metal circuit board made of copper or the like is placed on the ceramic substrate with the brazing material paste interposed therebetween. (4) Finally, the brazing material paste disposed between the ceramic substrate and the metal circuit board is heated to a temperature of about 900 ° C. in a non-oxidizing atmosphere, and the active metal powder is applied to the ceramic substrate via the active metal powder. A ceramic circuit board is manufactured by joining a brazing material made of a silver-copper alloy and joining the brazing material to a metal circuit board.
【0005】なお、前記ロウ材および金属回路板の露出
表面には酸化腐食を有効に防止すると同時に金属回路板
に半導体素子等の電子部品を接着固定する半田等の接着
材との接合を強固にするため、ニッケル等の金属がメッ
キ法等の技術を用いることによって被着されている。Incidentally, the brazing material and the exposed surface of the metal circuit board are effectively prevented from being oxidized and corroded and, at the same time, are firmly bonded to an adhesive such as solder for bonding and fixing electronic components such as semiconductor elements to the metal circuit board. For this purpose, a metal such as nickel is applied by using a technique such as a plating method.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、この従
来のセラミック回路基板の製造方法においては、セラミ
ック基板への金属回路板の接合はセラミック基板上にロ
ウ材ペーストを挟んで銅等から成る所定パターンの金属
回路板を載置させた後、これを還元雰囲気中、約900
℃の温度に加熱することによって行われており、前記ロ
ウ材ペーストは液相線温度以上の温度で加熱されること
から、大きく熔け広がり、この熔け広がったロウ材ペー
ストによって隣接する金属回路板間が電気的に短絡する
という欠点を有していた。However, in this conventional method of manufacturing a ceramic circuit board, the joining of the metal circuit board to the ceramic substrate is performed by forming a predetermined pattern made of copper or the like with a brazing material paste interposed on the ceramic substrate. After placing the metal circuit board, place it in a reducing atmosphere for about 900
° C, and since the brazing material paste is heated at a temperature equal to or higher than the liquidus temperature, it is greatly melted and spread. Had the drawback of being electrically short-circuited.
【0007】そこで上記欠点を解消するためにロウ材ペ
ーストの厚みを、例えば、10μm未満に薄くすること
が考えられる。Therefore, it is conceivable to reduce the thickness of the brazing material paste to, for example, less than 10 μm in order to solve the above-mentioned disadvantage.
【0008】しかしながら、ロウ材ペーストの厚みを薄
くすると、セラミック基板上に金属回路板を取着する
際、セラミック基板と金属回路板との間に発生する両者
の熱膨張係数の相違に起因する応力を前記ロウ材が有効
に吸収することができなくなり、その結果、前記応力に
よってセラミック基板にクラックや割れが発生するとい
う欠点が誘発されてしまう。However, when the thickness of the brazing material paste is reduced, when the metal circuit board is mounted on the ceramic substrate, a stress generated between the ceramic substrate and the metal circuit board due to a difference in thermal expansion coefficient between the two. Cannot be effectively absorbed by the brazing material. As a result, cracks and cracks are generated in the ceramic substrate due to the stress.
【0009】本発明は上記欠点に鑑み案出されたもの
で、その目的はセラミック基板上に金属回路板を、隣接
する金属回路板間に電気的短絡を発生することなく、ま
たセラミック基板に割れ等を発生することなく強固に接
着させることができるセラミック回路基板の製造方法を
提供することにある。The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to form a metal circuit board on a ceramic substrate without causing an electrical short between adjacent metal circuit boards and breaking the metal circuit board. It is an object of the present invention to provide a method for manufacturing a ceramic circuit board which can be firmly bonded without generating any problem.
【0010】[0010]
【課題を解決するための手段】本発明のセラミック回路
基板の製造方法は、(1)銀粉末と銅粉末および/また
は銀−銅合金粉末から成るロウ材粉末と、チタン、ジル
コニウム、ハフニウムおよびこれらの水素化物の少なく
とも1種より成る活性金属粉末とから成る活性金属ロウ
材と、融点が1200℃以上の高融点金属粉末を点接合
で接合して成る凝集体とを含有するロウ材ペーストを作
製する工程と、(2)セラミック基板上に前記ロウ材ペ
ーストを間に挟んで金属回路板を載置させる工程と、
(3)前記セラミック基板と金属回路板との間に配され
ているロウ材ペーストを非酸化性雰囲気中で加熱し、セ
ラミック基板に活性金属粉末を介して凝集体を含有する
銀−銅合金から成るロウ材を接合させるとともに該ロウ
材を金属回路板に接合させる工程と、から成ることを特
徴とするものである。The method of manufacturing a ceramic circuit board according to the present invention comprises: (1) a brazing filler metal powder comprising silver powder, copper powder and / or silver-copper alloy powder, titanium, zirconium, hafnium and the like. Of an active metal brazing material comprising an active metal powder comprising at least one of the following hydrides, and an agglomerate obtained by joining points of a high melting point metal powder having a melting point of 1200 ° C. or more by point joining. (2) placing a metal circuit board on the ceramic substrate with the brazing material paste interposed therebetween;
(3) A brazing material paste disposed between the ceramic substrate and the metal circuit board is heated in a non-oxidizing atmosphere, and a silver-copper alloy containing an aggregate is formed on the ceramic substrate via an active metal powder. And joining the brazing material to the metal circuit board.
【0011】また、本発明のセラミック回路基板の製造
方法は、前記凝集体が活性金属ロウ材に対して3乃至2
0重量%含有されていることを特徴とするものである。Further, in the method of manufacturing a ceramic circuit board according to the present invention, the aggregate is preferably 3 to 2 with respect to the active metal brazing material.
It is characterized by containing 0% by weight.
【0012】更に、本発明のセラミック回路基板の製造
方法は、前記凝集体の平均径が10乃至100μmの平
均径であること特徴とするものである。Further, in the method for manufacturing a ceramic circuit board according to the present invention, the aggregate has an average diameter of 10 to 100 μm.
【0013】本発明のセラミック回路基板の製造方法に
よれば、セラミック基板への金属回路板の接合は、セラ
ミック基板上に融点が1200℃以上の高融点金属粉末
を点接合で接合して成る平均径が10乃至100μmの
凝集体を活性金属ロウ材に対して3乃至20重量%含有
したロウ材ペーストを挟んで銅等から成る所定パターン
の金属回路板を載置させた後、これを還元雰囲気中、約
900℃の温度に加熱することによって行われることか
ら、前記ロウ材ペーストがロウ材の液相線温度以上の温
度で加熱されたとしても、前記凝集体がセラミック基板
と金属回路板との間でスペーサの役目を果たして前記ロ
ウ材ペーストが大きく熔け広がることはなく、その結
果、隣接する金属回路板間に電気的な短絡が発生するの
が有効に防止される。According to the method for manufacturing a ceramic circuit board of the present invention, the bonding of the metal circuit board to the ceramic substrate is performed by bonding a high melting point metal powder having a melting point of 1200 ° C. or more on the ceramic substrate by point bonding. A metal circuit board having a predetermined pattern made of copper or the like is placed with a brazing material paste containing 3 to 20% by weight of an agglomerate having a diameter of 10 to 100 μm based on the active metal brazing material, and then placed in a reducing atmosphere. Medium, since the heating is performed by heating to a temperature of about 900 ° C., even if the brazing material paste is heated at a temperature equal to or higher than the liquidus temperature of the brazing material, the agglomerate forms a ceramic substrate and a metal circuit board. The solder paste does not greatly melt and spread as a spacer between the metal plates, and as a result, an electrical short circuit between adjacent metal circuit boards is effectively prevented from occurring.
【0014】また同時に、融点が1200℃以上の高融
点金属粉末を点接合で接合させた凝集体によって金属回
路板とセラミック基板との間に所定厚みのスペースが確
保され、該スペースに所定量のロウ材が介在することか
ら金属回路板とセラミック基板の熱膨張係数の相違によ
って発生する応力は前記ロウ材に吸収され、セラミック
基板にクラックや割れ等が発生するのを有効に防止する
ことができる。At the same time, a space having a predetermined thickness is secured between the metal circuit board and the ceramic substrate by an aggregate obtained by joining high melting point metal powders having a melting point of 1200 ° C. or higher by point bonding. Since the brazing material is interposed, the stress generated due to the difference in the coefficient of thermal expansion between the metal circuit board and the ceramic substrate is absorbed by the brazing material, and it is possible to effectively prevent the ceramic substrate from being cracked or broken. .
【0015】[0015]
【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図1及び図2は、本発明の製造方法に
よって作製した配線基板の一実施例を示す断面図であ
り、1はセラミック基板、2はロウ材層、3は金属回路
板である。Next, the present invention will be described in detail with reference to the accompanying drawings. 1 and 2 are cross-sectional views showing one embodiment of a wiring board manufactured by the manufacturing method of the present invention, wherein 1 is a ceramic substrate, 2 is a brazing material layer, and 3 is a metal circuit board.
【0016】前記セラミック基板1は酸化アルミニウム
質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化
アルミニウム質焼結体、窒化珪素質焼結体等の電気絶縁
材料からなり、その上面に金属回路板3が活性金属ロウ
材層2を介してロウ付けされている。The ceramic substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, and a silicon nitride sintered body. On the upper surface, a metal circuit board 3 is brazed via an active metal brazing material layer 2.
【0017】前記セラミック基板1はその上面にロウ付
けされる金属回路板3を支持する支持部材として作用す
る。The ceramic substrate 1 functions as a supporting member for supporting the metal circuit board 3 brazed on the upper surface thereof.
【0018】また前記セラミック基板1の上面にロウ付
けされている金属回路板3は銅等の金属材料から成り、
セラミック回路基板に実装される半導体素子等に電気信
号や電力を供給する作用をなす。The metal circuit board 3 brazed to the upper surface of the ceramic substrate 1 is made of a metal material such as copper.
It functions to supply electric signals and electric power to semiconductor elements and the like mounted on the ceramic circuit board.
【0019】更に前記セラミック基板1の上面に金属回
路板3をロウ付けするロウ材は活性金属ロウ材からな
り、ロウ材自身が活性を有していることからセラミック
基板1上に直接取着することになる。Further, the brazing material for brazing the metal circuit board 3 to the upper surface of the ceramic substrate 1 is made of an active metal brazing material, and is directly attached onto the ceramic substrate 1 because the brazing material itself has activity. Will be.
【0020】かくして上述のセラミック回路基板によれ
ば、セラミック基板1上面の金属回路板3に半田等の接
着材を介して半導体素子等の電子部品を電気的に接続さ
せるとともに金属回路板3を外部電気回路に接続すれば
半導体素子等の電子部品は金属回路板3を介して外部電
気回路に電気的に接続されることとなる。Thus, according to the above-mentioned ceramic circuit board, electronic components such as semiconductor elements are electrically connected to the metal circuit board 3 on the upper surface of the ceramic substrate 1 via an adhesive such as solder, and the metal circuit board 3 is externally connected. When connected to an electric circuit, electronic components such as semiconductor elements are electrically connected to an external electric circuit via the metal circuit board 3.
【0021】次に上記セラミック回路基板の製造方法に
ついて説明する。 (1)先ず、セラミック基板1を製作する。前記セラミ
ック基板1は酸化アルミニウム質焼結体、ムライト質焼
結体、炭化珪素質焼結体、窒化アルミニウム質焼結体、
窒化珪素質焼結体等の電気絶縁材料からなり、例えば、
酸化アルミニウム質焼結体から成る場合には、酸化アル
ミニウム、酸化珪素、酸化マグネシウム、酸化カルシウ
ム等の原料粉末に適当な有機バインダー、可塑剤、溶剤
を添加混合して泥漿状となすとともに該泥漿物を従来周
知のドクターブレード法やカレンダーロール法を採用す
ることによってセラミックグリーンシート(セラミック
生シート)を形成し、しかる後、前記セラミックグリー
ンシートに適当な打ち抜き加工を施すとともにこれを複
数枚積層し、約1600℃の高温で焼成することによっ
て製作される。 (2)次に、金属回路板3を製作する。前記金属回路板
3は銅等の金属材料から成り、例えば、銅等のインゴッ
ト(塊)に圧延加工法や打ち抜き加工法等、従来周知の
金属加工法を施すことによって、厚さが500μmの所
定パターンに形状される。Next, a method of manufacturing the above ceramic circuit board will be described. (1) First, the ceramic substrate 1 is manufactured. The ceramic substrate 1 is made of an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body,
It is made of an electrically insulating material such as a silicon nitride sintered body, for example,
When it is made of an aluminum oxide-based sintered body, an appropriate organic binder, a plasticizer, and a solvent are added to raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide to form a slurry, and the slurry is formed. A ceramic green sheet (ceramic green sheet) is formed by employing a conventionally known doctor blade method or calender roll method, and thereafter, the ceramic green sheet is subjected to an appropriate punching process and a plurality of the ceramic green sheets are laminated. It is manufactured by firing at a high temperature of about 1600 ° C. (2) Next, the metal circuit board 3 is manufactured. The metal circuit board 3 is made of a metal material such as copper. For example, a predetermined well-known metal processing method such as a rolling method or a punching method is applied to an ingot (lumps) of copper or the like to obtain a predetermined thickness of 500 μm. Shaped into a pattern.
【0022】なお、前記金属回路板3はこれを無酸素銅
で形成しておくと、該無酸素銅はロウ付けの際に銅の表
面が銅中に存在する酸素により酸化されることなく活性
金属ロウ材との濡れ性が良好となり、セラミック基板1
へのロウ材層2を介しての接合が強固となる。従って、
前記金属回路板3はこれを無酸素銅で形成しておくこと
が好ましい。 (3)次に、活性金属ロウ材ペーストを製作する。前記
活性金属ロウ材ペーストは、銀粉末と銅粉末および/ま
たは銀−銅合金粉末から成るロウ材粉末と、チタン、ジ
ルコニウム、ハフニウムおよびこれらの水素化物の少な
くとも1種より成る活性金属粉末とから成る活性金属ロ
ウ材に、融点が1200℃以上の高融点金属粉末を点接
合で接合して成る平均径が10乃至100μmの凝集体
2aを3乃至20重量%と適当な有機溶剤、溶媒を添加
混合し、混練することによって製作される。 (4)次に、前記セラミック基板1上面に前記活性金属
ロウ材ペーストを従来周知のスクリーン印刷技法を用い
て、例えば、30乃至50μmの厚さで所定パターに印
刷塗布するとともに該所定パターに印刷塗布された活性
金属ロウ材ペースト上に前記金属回路板3を載置する。When the metal circuit board 3 is formed of oxygen-free copper, the oxygen-free copper is activated without the surface of copper being oxidized by the oxygen existing in the copper during brazing. The wettability with the metal brazing material is improved, and the ceramic substrate 1
Bonding through the brazing material layer 2 is strengthened. Therefore,
It is preferable that the metal circuit board 3 is formed of oxygen-free copper. (3) Next, an active metal brazing material paste is manufactured. The active metal brazing material paste comprises a brazing material powder composed of silver powder, copper powder and / or silver-copper alloy powder, and an active metal powder composed of at least one of titanium, zirconium, hafnium and hydrides thereof. 3-20% by weight of agglomerates 2a having an average diameter of 10-100 μm, which are obtained by joining high melting point metal powders having a melting point of 1200 ° C. or more by spot joining to an active metal brazing material, and an appropriate organic solvent and solvent are added and mixed. It is manufactured by kneading. (4) Next, the active metal brazing material paste is applied to a predetermined pattern with a thickness of, for example, 30 to 50 μm on the upper surface of the ceramic substrate 1 using a well-known screen printing technique, and is printed on the predetermined pattern. The metal circuit board 3 is placed on the applied active metal brazing material paste.
【0023】そして最後に、前記セラミック基板1と金
属回路板3との間に配されている活性金属ロウ材ペース
トを、前記金属回路板3に50乃至100gの荷重をか
けながら水素ガス雰囲気や水素・窒素ガス雰囲気の非酸
化性雰囲気中で、900℃に加熱し、前記活性金属ロウ
材ペーストの有機溶剤や溶媒を気散させるとともにロウ
材を溶融せしめセラミック基板1の上面と金属回路板3
の下面とに接合させることによって、セラミック基板1
の上面に金属回路板が取着されることとなる。この場
合、活性金属ロウ材ペーストの中には、融点が1200
℃以上の高融点金属粉末を点接合で接合して成る凝集体
2aが添加されていることからセラミック基板1と金属
回路板3との間に所定厚みのスペースが確保されてロウ
材が大きく熔け広がることはなく、その結果、隣接する
金属回路板間に電気的な短絡が発生するのが有効に防止
される。また同時に、融点が1200℃以上の高融点金
属粉末を点接合で接合させた凝集体2aによって金属回
路板3とセラミック基板1との間に所定厚みのスペース
が確保され、該スペースに所定量のロウ材が介在するこ
とから金属回路板3とセラミック基板1の熱膨張係数の
相違によって発生する応力は前記ロウ材に吸収され、セ
ラミック基板1にクラックや割れ等が発生するすること
はない。Finally, the active metal brazing material paste disposed between the ceramic substrate 1 and the metal circuit board 3 is applied to the metal circuit board 3 while applying a load of 50 to 100 g to a hydrogen gas atmosphere or a hydrogen gas atmosphere. Heating to 900 ° C. in a non-oxidizing atmosphere of a nitrogen gas atmosphere to diffuse the organic solvent and the solvent of the active metal brazing material paste and to melt the brazing material, so that the upper surface of the ceramic substrate 1 and the metal circuit board 3
By bonding to the lower surface of the ceramic substrate 1
A metal circuit board will be attached to the upper surface of. In this case, the active metal brazing material paste has a melting point of 1200.
Since agglomerates 2a formed by joining metal powders having a high melting point of not less than ° C. by point joining are added, a space of a predetermined thickness is secured between the ceramic substrate 1 and the metal circuit board 3, so that the brazing material is largely melted. It does not spread, thereby effectively preventing an electrical short circuit between adjacent metal circuit boards. At the same time, a space of a predetermined thickness is secured between the metal circuit board 3 and the ceramic substrate 1 by the agglomerate 2a in which high melting point metal powders having a melting point of 1200 ° C. or more are joined by point bonding. Since the brazing material is interposed, the stress generated due to the difference in the thermal expansion coefficient between the metal circuit board 3 and the ceramic substrate 1 is absorbed by the brazing material, so that cracks and cracks do not occur in the ceramic substrate 1.
【0024】なお、前記活性金属ロウ材の銀粉末と銅粉
末および/または銀−銅合金粉末から成るロウ材粉末は
前記セラミック基板1と金属回路板3とを接合する作用
をなし、例えば、共晶合金から成る場合は銀と銅がそれ
ぞれ72重量%と28重量%含有されている共晶合金で
形成されている。The active metal brazing filler metal powder composed of silver powder and copper powder and / or silver-copper alloy powder serves to join the ceramic substrate 1 and the metal circuit board 3. In the case of a eutectic alloy, it is formed of a eutectic alloy containing 72% by weight and 28% by weight of silver and copper, respectively.
【0025】また、前記ロウ材粉末の粒径は1μm未満
となるとロウ材粉末の比表面積が大きくなってロウ材粉
末表面に形成される酸化皮膜中に多くの酸素が存在し、
該酸素によって活性金属ロウ材のセラミック基板1や金
属回路板3に対する濡れ性が低下して、前記セラミック
基板1と金属回路板3との接合強度が低下してしまう危
険性がある。従って、前記ロウ材粉末はその粒径を1μ
m以上としておくことが好ましい。When the particle size of the brazing material powder is less than 1 μm, the specific surface area of the brazing material powder increases, so that a large amount of oxygen is present in an oxide film formed on the surface of the brazing material powder,
Due to the oxygen, the wettability of the active metal brazing material to the ceramic substrate 1 and the metal circuit board 3 is reduced, and there is a risk that the bonding strength between the ceramic substrate 1 and the metal circuit board 3 is reduced. Accordingly, the brazing powder has a particle size of 1 μm.
It is preferable to set m or more.
【0026】更に前記チタン、ジルコニウム、ハフニウ
ムおよびこれらの水素化物の少なくとも1種より成る活
性金属粉末はロウ材をセラミック基板1に強固に接着す
る作用をなし、活性金属粉末が2重量%未満となると活
性金属の絶対量が不足してロウ材をセラミック基板1に
強固に接着させることができなくなる危険性があり、ま
た5重量%を超えると活性金属とセラミック基板1との
間に脆弱な反応層が厚く形成され、結果的にロウ材とセ
ラミック基板1との接着強度が低下してしまう危険性が
ある。従って、前記活性金属の添加量は2乃至5重量%
の範囲にしておくことが好ましい。Further, the active metal powder comprising at least one of titanium, zirconium, hafnium and hydrides thereof has an effect of firmly bonding the brazing material to the ceramic substrate 1, and when the active metal powder is less than 2% by weight. There is a danger that the brazing material cannot be firmly bonded to the ceramic substrate 1 due to an insufficient amount of the active metal, and a fragile reaction layer between the active metal and the ceramic substrate 1 exceeds 5% by weight. Is formed thick, and as a result, there is a risk that the adhesive strength between the brazing material and the ceramic substrate 1 is reduced. Therefore, the addition amount of the active metal is 2 to 5% by weight.
It is preferable to keep the range.
【0027】また更に、前記凝集体2aはタングステ
ン、モリブデン、マンガン等の融点が1200℃以上の
高融点金属の粉末から形成されており、例えば、高融点
金属粉末がモリブデンの場合であれば還元雰囲気中で約
2000℃の温度に加熱し、約5分間保持することによ
り、粉体同士を点接合で接合した後、室温まで徐冷し、
所定の径に分級することによって製作される。Further, the agglomerate 2a is made of a powder of a high melting point metal such as tungsten, molybdenum, manganese or the like having a melting point of 1200 ° C. or more. For example, if the high melting point metal powder is molybdenum, a reducing atmosphere is used. By heating to a temperature of about 2000 ° C. and holding the powder for about 5 minutes, the powders are joined by point joining, and then gradually cooled to room temperature.
It is manufactured by classifying to a predetermined diameter.
【0028】前記高融点金属はその融点が1200℃と
ロウ材の液相線温度よりも充分に高い融点を有すること
から、ロウ材が液相温度以上の温度に加熱され場合でも
凝集体2aは溶融することなく前記セラミック基板1と
金属回路板3との間に所定厚みのスペーサを確実に確保
することができる。Since the high melting point metal has a melting point of 1200 ° C., which is sufficiently higher than the liquidus temperature of the brazing material, even when the brazing material is heated to a temperature higher than the liquidus temperature, the aggregates 2a remain A spacer having a predetermined thickness can be reliably secured between the ceramic substrate 1 and the metal circuit board 3 without melting.
【0029】前記凝集体2aはまたその径が10μm未
満となるとセラミック基板1と金属回路板3との間の所
定厚みのスペースを確保するのが困難となり、また10
0μmを超えると活性金属ロウ材ペーストをセラミック
基板1上面に従来周知のスクリーン印刷法等の印刷技術
を用いて印刷塗布する際、凝集体2aがスクリーンのメ
ッシュに引っかかって所定のパターンに印刷塗布するの
が困難となる。従って、前記凝集体2aはその径を10
乃至100μmの範囲に、より好適には20乃至50μ
mの範囲にしておくことが好ましい。If the diameter of the agglomerate 2a is less than 10 μm, it is difficult to secure a space of a predetermined thickness between the ceramic substrate 1 and the metal circuit board 3.
When the thickness exceeds 0 μm, when the active metal brazing material paste is printed and applied on the upper surface of the ceramic substrate 1 by using a printing technique such as a conventionally known screen printing method, the aggregates 2a are caught by a mesh of the screen and printed and applied in a predetermined pattern. It becomes difficult. Accordingly, the aggregate 2a has a diameter of 10
To 100 μm, more preferably 20 to 50 μm.
It is preferable to set it in the range of m.
【0030】更に、前記凝集体2aを形成するタングス
テン、モリブデン、マンガン等の高融点金属粉末はその
径が1μm未満となると比表面積が大きくなって、高融
点金属粉末表面に形成される酸化皮膜中に多くの酸素が
存在し、該酸素によって活性金属ロウ材のセラミック基
板1や金属回路板3に対する濡れ性が低下して、前記セ
ラミック基板1と金属回路板3との接合強度が低下して
しまう危険性があり、また6μmを超えると高融点金属
粉末間の接合点が少なくて凝集体2aの機械的強度が弱
くなり、セラミック基板1に金属回路板3をロウ付けす
る際に凝集体2aの高融点金属粉末間にばらけが発生し
てセラミック基板1と金属回路板3との間に所定厚みの
スペースを確保することが困難となってしまう。従っ
て、前記凝集体2aを形成する各高融点金属粉末はその
径を1乃至6μmの範囲としておくことが好ましい。Further, when the diameter of the high melting point metal powder such as tungsten, molybdenum, manganese or the like forming the aggregate 2a is less than 1 μm, the specific surface area increases, and the oxide film formed on the surface of the high melting point metal powder is reduced. And the oxygen reduces the wettability of the active metal brazing material to the ceramic substrate 1 and the metal circuit board 3, and reduces the bonding strength between the ceramic substrate 1 and the metal circuit board 3. There is a danger, and if it exceeds 6 μm, the number of bonding points between the high melting point metal powders is small, so that the mechanical strength of the aggregate 2a becomes weak, and when the metal circuit board 3 is brazed to the ceramic substrate 1, the aggregate 2a Variations occur between the high melting point metal powders, and it becomes difficult to secure a space of a predetermined thickness between the ceramic substrate 1 and the metal circuit board 3. Therefore, it is preferable that each high melting point metal powder forming the aggregate 2a has a diameter of 1 to 6 μm.
【0031】また更に、前記凝集体2aのロウ材への添
加量は3重量%未満となると、前記セラミック基板1と
金属回路板3との間に所定厚みのスペースを確保するの
が困難となり、また20重量%を超えるとセラミック基
板1及び金属回路板3に対するロウ材の接合面積が狭く
なってセラミック基板1への金属回路板3のロウ付け強
度が低下してしまう傾向にある。従って、前記凝集体2
aのロウ材への添加量は3乃至20重量%の範囲として
おくことが好ましい。Further, if the amount of the aggregate 2a added to the brazing material is less than 3% by weight, it becomes difficult to secure a space of a predetermined thickness between the ceramic substrate 1 and the metal circuit board 3, On the other hand, if the content exceeds 20% by weight, the bonding area of the brazing material to the ceramic substrate 1 and the metal circuit board 3 becomes narrow, and the brazing strength of the metal circuit board 3 to the ceramic substrate 1 tends to decrease. Therefore, the aggregate 2
The amount of a added to the brazing material is preferably in the range of 3 to 20% by weight.
【0032】なお、本発明は上述の実施例に限定される
ものではなく、本発明の趣旨を逸脱しない範囲であれば
種々の変更は可能であり、例えば、上述の実施例ではセ
ラミック基板1がアルミニウム質焼結体で形成された例
を示したが、電子部品が多量の熱を発し、この熱を効率
良く除去したい場合にはセラミック基板1を熱伝導率の
高い窒化アルミニウム質焼結体や窒化珪素質焼結体で形
成すれば良く、金属回路板3に高速で電気信号を伝播さ
せたい場合にはセラミック基板1を誘電率の低いムライ
ト質焼結体で形成すれば良い。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. Although an example in which the electronic component generates a large amount of heat and an efficient removal of this heat is described, the ceramic substrate 1 may be formed of an aluminum nitride sintered body having a high thermal conductivity or an aluminum nitride sintered body. The ceramic substrate 1 may be formed of a mullite sintered body having a low dielectric constant when an electric signal is to be propagated to the metal circuit board 3 at high speed.
【0033】また前記金属回路板3の表面にニッケルか
ら成る、良導電性で、かつ耐蝕性及びロウ材との濡れ性
が良好な金属をメッキ法により被着させておくと、金属
回路板3と外部電気回路との電気的接続を良好と成すと
ともに金属回路板3に半導体素子等の電子部品を強固に
接着させることができる。When a metal made of nickel and having good conductivity, good corrosion resistance and good wettability with the brazing material is applied to the surface of the metal circuit board 3 by plating, the metal circuit board 3 Good electrical connection between the metal circuit board 3 and an external electric circuit, and electronic components such as semiconductor elements can be firmly adhered to the metal circuit board 3.
【0034】更に前記ニッケルメッキ層は燐を8〜15
重量%含有させたニッケル−燐のアモルファス合金とし
ておくとニッケル層の表面酸化を良好に防止することが
でき、前記ニッケルメッキ層に含有される燐(P)が8
重量%未満となるとニッケルメッキ層は酸化しやすいニ
ッケル−燐の多結晶構造と成って金属回路板3に半導体
素子等の電子部品を半田等の接着材を介して強固に電気
的に接続することができず、また15重量%を超えると
ニッケルメッキ層を形成する際、燐が単独に、また優先
的に析出してニッケル−燐のアモルファス合金を形成す
ることができなくなる。従って、前記ニッケルメッキ層
の内部に含有される燐の量は8〜15重量%の範囲に特
定され、好適には10〜15重量%の範囲がよい。Further, the nickel plating layer contains 8 to 15 phosphorus.
If the nickel-phosphorus amorphous alloy is contained in the nickel plating layer, the surface oxidation of the nickel layer can be prevented well, and the phosphorous (P) contained in the nickel plating layer becomes 8%.
When the content is less than 5% by weight, the nickel plating layer has a polycrystalline structure of nickel-phosphorus which is easily oxidized, and electronic components such as semiconductor elements are firmly and electrically connected to the metal circuit board 3 through an adhesive such as solder. If the content exceeds 15% by weight, when forming a nickel plating layer, phosphorus is deposited alone and preferentially, making it impossible to form a nickel-phosphorus amorphous alloy. Therefore, the amount of phosphorus contained in the nickel plating layer is specified in the range of 8 to 15% by weight, and preferably in the range of 10 to 15% by weight.
【0035】また更に、前記金属回路板3の表面に被着
されるニッケルメッキ層は、その厚みが1.5μm未満
の場合、金属回路板3の表面をニッケルメッキ層で完全
に被覆することができず、金属回路板3の酸化腐蝕を有
効に防止することができなくなり、また3μmを超える
とニッケルメッキ層の内部に内在する内在応力が大きく
なってセラミック基板1に反りや割れ等が発生してしま
う。特にセラミック基板1の厚さが700μm以下の薄
いものになった場合にはこのセラミック基板1の反りや
割れ等が顕著となってしまう。従って、前記金属回路板
3の表面に被着されるニッケルメッキ層は、はその厚み
を1.5μm乃至3μmの範囲としておくことが好まし
い。Further, when the thickness of the nickel plating layer applied to the surface of the metal circuit board 3 is less than 1.5 μm, the surface of the metal circuit board 3 can be completely covered with the nickel plating layer. It is impossible to effectively prevent the metal circuit board 3 from being oxidized and corroded. If the thickness exceeds 3 μm, the internal stress inside the nickel plating layer becomes large and the ceramic substrate 1 may be warped or cracked. Would. In particular, when the thickness of the ceramic substrate 1 is as thin as 700 μm or less, warpage or cracking of the ceramic substrate 1 becomes remarkable. Therefore, it is preferable that the thickness of the nickel plating layer applied to the surface of the metal circuit board 3 be in the range of 1.5 μm to 3 μm.
【0036】[0036]
【発明の効果】本発明のセラミック回路基板の製造方法
によれば、セラミック基板への金属回路板の接合は、セ
ラミック基板上に融点が1200℃以上の高融点金属粉
末を点接合で接合して成る平均径が10乃至100μm
の凝集体を活性金属ロウ材に対して3乃至20重量%含
有したロウ材ペーストを挟んで銅等から成る所定パター
ンの金属回路板を載置させた後、これを還元雰囲気中、
約900℃の温度に加熱することによって行われること
から、前記ロウ材ペーストがロウ材の液相線温度以上の
温度で加熱されたとしても、前記凝集体がセラミック基
板と金属回路板との間でスペーサの役目を果たして前記
ロウ材ペーストが大きく熔け広がることはなく、その結
果、隣接する金属回路板間に電気的な短絡が発生するの
が有効に防止される。According to the method for manufacturing a ceramic circuit board of the present invention, a metal circuit board is bonded to a ceramic substrate by point bonding of a high melting point metal powder having a melting point of 1200 ° C. or more on the ceramic substrate. Has an average diameter of 10 to 100 μm
After placing a metal circuit board of a predetermined pattern made of copper or the like with a brazing material paste containing 3 to 20% by weight of the aggregate of the active metal brazing material with respect to the active metal brazing material, this is placed in a reducing atmosphere.
Since it is performed by heating to a temperature of about 900 ° C., even if the brazing material paste is heated at a temperature equal to or higher than the liquidus temperature of the brazing material, the agglomerates remain between the ceramic substrate and the metal circuit board. Thus, the brazing material paste does not melt and spread widely by acting as a spacer, thereby effectively preventing an electrical short circuit between adjacent metal circuit boards.
【0037】また同時に、融点が1200℃以上の高融
点金属粉末を点接合で接合させた凝集体によって金属回
路板とセラミック基板との間に所定厚みのスペースが確
保され、該スペースに所定量のロウ材が介在することか
ら金属回路板とセラミック基板の熱膨張係数の相違によ
って発生する応力は前記ロウ材に吸収され、セラミック
基板にクラックや割れ等が発生するのを有効に防止する
ことができる。At the same time, a space having a predetermined thickness is secured between the metal circuit board and the ceramic substrate by the aggregate obtained by joining the high melting point metal powder having a melting point of 1200 ° C. or more by point bonding. Since the brazing material is interposed, the stress generated due to the difference in the coefficient of thermal expansion between the metal circuit board and the ceramic substrate is absorbed by the brazing material, and it is possible to effectively prevent the ceramic substrate from being cracked or broken. .
【図1】本発明の製造方法によって製作されたセラミッ
ク回路基板の一実施例を示す断面図である。FIG. 1 is a sectional view showing one embodiment of a ceramic circuit board manufactured by a manufacturing method of the present invention.
【図2】図1の要部拡大断面図である。FIG. 2 is an enlarged sectional view of a main part of FIG.
1・・・・セラミック基板 2・・・・ロウ材層 2a・・・凝集体 3・・・・金属回路板 DESCRIPTION OF SYMBOLS 1 ... Ceramic substrate 2 ... Brazing material layer 2a ... Aggregate 3 ... Metal circuit board
Claims (3)
銅合金粉末から成るロウ材粉末と、チタン、ジルコニウ
ム、ハフニウムおよびこれらの水素化物の少なくとも1
種より成る活性金属粉末とから成る活性金属ロウ材と、
融点が1200℃以上の高融点金属粉末を点接合で接合
して成る凝集体とを含有するロウ材ペーストを作製する
工程と、(2)セラミック基板上に前記ロウ材ペースト
を間に挟んで金属回路板を載置させる工程と、(3)前
記セラミック基板と金属回路板との間に配されているロ
ウ材ペーストを非酸化性雰囲気中で加熱し、セラミック
基板に活性金属粉末を介して凝集体を含有する銀−銅合
金から成るロウ材を接合させるとともに該ロウ材を金属
回路板に接合させる工程と、から成るセラミック回路基
板の製造方法。(1) Silver powder and copper powder and / or silver
A brazing filler metal powder comprising a copper alloy powder and at least one of titanium, zirconium, hafnium and hydrides thereof;
An active metal brazing material comprising an active metal powder comprising a seed;
A step of producing a brazing material paste containing an agglomerate obtained by joining point melting points of a high melting point metal powder having a melting point of 1200 ° C. or more; and (2) forming a metal on a ceramic substrate with the brazing material paste interposed therebetween. (3) heating the brazing material paste disposed between the ceramic substrate and the metal circuit board in a non-oxidizing atmosphere, and setting the ceramic board on the ceramic substrate via active metal powder; Joining a brazing material made of a silver-copper alloy containing an aggregate and joining the brazing material to a metal circuit board.
至20重量%含有されていることを特徴とする請求項1
に記載のセラミック回路基板の製造方法。2. The method according to claim 1, wherein the agglomerates are contained in an amount of 3 to 20% by weight based on the active metal brazing material.
3. The method for manufacturing a ceramic circuit board according to item 1.
の平均径であること特徴とする請求項1に記載のセラミ
ック回路基板の製造方法。3. An aggregate having an average diameter of 10 to 100 μm.
2. The method for manufacturing a ceramic circuit board according to claim 1, wherein the average diameter of the ceramic circuit board is the average diameter of the ceramic circuit board.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32894599A JP4299421B2 (en) | 1999-11-19 | 1999-11-19 | Manufacturing method of ceramic circuit board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32894599A JP4299421B2 (en) | 1999-11-19 | 1999-11-19 | Manufacturing method of ceramic circuit board |
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Publication Number | Publication Date |
---|---|
JP2001148568A true JP2001148568A (en) | 2001-05-29 |
JP4299421B2 JP4299421B2 (en) | 2009-07-22 |
Family
ID=18215863
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JP32894599A Expired - Fee Related JP4299421B2 (en) | 1999-11-19 | 1999-11-19 | Manufacturing method of ceramic circuit board |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008023546A (en) * | 2006-07-19 | 2008-02-07 | Honda Motor Co Ltd | Method for joining members with different coefficients of thermal expansion |
JP2012115846A (en) * | 2010-11-29 | 2012-06-21 | Kyocera Corp | Brazing material, circuit board using the same, and electronic device |
CN114286529A (en) * | 2021-11-12 | 2022-04-05 | 江西昊光科技有限公司 | A kind of preparation method of ceramic circuit substrate and ceramic circuit substrate |
CN115870660A (en) * | 2021-09-29 | 2023-03-31 | 比亚迪股份有限公司 | Active metal soldering paste composition, soldering paste and method for soldering ceramic and metal |
TWI863823B (en) * | 2024-02-06 | 2024-11-21 | 同欣電子工業股份有限公司 | Method for producing active metal ceramic substrate |
JP7654451B2 (en) | 2020-04-28 | 2025-04-01 | 東洋アルミニウム株式会社 | Brazing paste composition and brazing method using same |
-
1999
- 1999-11-19 JP JP32894599A patent/JP4299421B2/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008023546A (en) * | 2006-07-19 | 2008-02-07 | Honda Motor Co Ltd | Method for joining members with different coefficients of thermal expansion |
JP2012115846A (en) * | 2010-11-29 | 2012-06-21 | Kyocera Corp | Brazing material, circuit board using the same, and electronic device |
JP7654451B2 (en) | 2020-04-28 | 2025-04-01 | 東洋アルミニウム株式会社 | Brazing paste composition and brazing method using same |
CN115870660A (en) * | 2021-09-29 | 2023-03-31 | 比亚迪股份有限公司 | Active metal soldering paste composition, soldering paste and method for soldering ceramic and metal |
CN114286529A (en) * | 2021-11-12 | 2022-04-05 | 江西昊光科技有限公司 | A kind of preparation method of ceramic circuit substrate and ceramic circuit substrate |
TWI863823B (en) * | 2024-02-06 | 2024-11-21 | 同欣電子工業股份有限公司 | Method for producing active metal ceramic substrate |
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