JP2001144569A - Branching filter and layered high frequency component using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a small-sized branching filter with excellent branching filter and insertion loss characteristics and to provide a layered high frequency component. SOLUTION: In the branching filter with a branching circuit consisting of a layered element assembly resulting from layering and integrating insulator layers and conductor layers which configure inductive elements and capacitive elements and also consisting of a 1st notch circuit where the 1st inductive element and the 1st capacitive element are connected in parallel and of a 2nd notch circuit where the 2nd inductive element and the 2nd capacitive element are connected in parallel while one terminal of the 1st notch circuit and one terminal of the 2nd notch circuit are connected, and consisting of the 1st capacitive element while subjecting the conductor layer consisting of the 1st inductive element to locate nearly oppositely to the conductor layer consisting of the 2nd capacitive element in the layered direction via the insulation layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency circuit used in a microwave band, which has a function of distributing or combining a plurality of different frequency signals, and is particularly used for a dual-band portable telephone. The present invention relates to a duplexer and a laminated high-frequency component using the same.

[0002]

2. Description of the Related Art In recent years, the spread of mobile phones has been remarkable, and the functions of mobile terminals have been improved. As one of them, there has been proposed a multi-band mobile phone that enables a single mobile terminal to communicate in two or more frequency bands. In order to construct this portable terminal at low cost,
A function of distributing or combining a high-frequency signal of a frequency corresponding to each system is required.

FIG. 7 shows a circuit diagram of a conventional duplexer. This conventional example has a structure in which an LPF (low-pass filter) and an HPF (high-pass filter) are combined. Japanese Patent Application Laid-Open No. Hei 3-216002 discloses a duplexer having the block diagrams shown in FIGS. The splitter in FIG.
The LPF is connected to the HPF of the circuit of FIG. 7 and the LPF is connected to the HPF of the circuit of FIG.
And a REJ (rejection filter). These filters generally use a dielectric coaxial resonator. This has a structure in which electrodes are formed on the inner and outer peripheral surfaces of a cylindrical body made of dielectric porcelain, and is not suitable for miniaturization in terms of shape.

[0004]

In order to constitute the multi-band portable telephone, a function of selecting a plurality of frequencies is required. In addition, a small duplexer is required for use in a portable terminal. Need to be configured. The present invention has been made to solve the above problems, and an object of the present invention is to provide a small and high-performance duplexer having a novel structure and a multilayer high-frequency component using the same.

[0005]

According to a first aspect of the present invention, a branching circuit is constituted by an inductance element and a capacitance element formed of the conductor layer in a laminated body in which an insulator layer and a conductor layer are laminated and integrated. A branching circuit, wherein the branching circuit includes a first notch circuit in which a first inductance element and a first capacitance element are connected in parallel, and a second inductance element and a second capacitance element. A second notch circuit connected in parallel;
One ends of a second notch circuit are connected to each other, and a first capacitance element of the first notch circuit is connected to the first notch circuit.
And a conductor layer constituting the inductance element and a conductor layer constituting the second capacitance element are substantially opposed to each other in the laminating direction via an insulator layer. . According to a second aspect of the present invention, there is provided a duplexer in which a duplexer is configured by an inductance element and a capacitance element formed of the conductor layer in a laminated body in which an insulator layer and a conductor layer are integrated. One end of a first notch circuit connecting a first inductance element and a first capacitance element in parallel, and a second notch circuit connecting a second inductance element and a second capacitance element in parallel. A branching circuit connected to one end, wherein the first capacitance element of the branching circuit is configured by dividing a conductor layer forming the first inductance element into at least two insulator layers;
This is a duplexer formed by using a capacitance component obtained by causing the separately formed conductor layers to substantially face each other in the stacking direction. According to a third aspect of the present invention, there is provided a duplexer in which a duplexer is configured by an inductance element and a capacitance element formed of the conductor layer in a laminated body in which an insulator layer and a conductor layer are integrated. , Connecting a first inductance element and a first capacitance element in parallel.
And a second notch circuit that connects a second inductance element and a second capacitance element in parallel with each other, wherein the first notch circuit is connected to one end of the first notch circuit. The capacitance element obtained by dividing the conductor layer forming the first inductance element into at least two insulator layers and making the divided conductor layers substantially oppose in the laminating direction. And a capacitance component obtained by substantially opposing a conductor layer forming the first inductance element and a conductor layer forming the second capacitance element in the laminating direction via an insulator layer. It is a duplexer. In a fourth aspect based on the above invention, a low-pass filter circuit is provided by disposing a capacitance element between the other end of the first notch circuit and a ground formed by the conductor layer. Preferably, an inductance element is arranged between the end and the ground, and a capacitance element is connected in series to form a high-pass filter circuit. The fifth invention is
A laminated high-frequency component in which a plurality of land electrodes are arranged on one or both surfaces of a laminated element provided with the above-described duplexer, and electronic components are connected to the land electrodes. As the electronic components, chip components such as chip resistors and chip capacitors,
It is appropriately selected from high-frequency components such as diodes and transistors.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A duplexer according to the present invention will be described with reference to FIGS. FIG. 1 is an equivalent circuit diagram of a duplexer according to one embodiment of the present invention, and FIG. 2 is a block circuit diagram of a high-frequency laminated component according to one embodiment of the present invention. This duplexer includes an inductance element and a capacitance element formed of a line-shaped or planar conductor layer (hereinafter referred to as a pattern electrode) inside a laminated body formed by laminating and integrating insulator layers made of a dielectric. One end of the first notch circuit and the other end of the second notch circuit are connected to each other to form a first terminal P1 for connection to an antenna, and the other ends to a second terminal P2 and a third terminal P3, respectively. This is a duplexer that is a wave signal branching circuit. The demultiplexing circuit includes a second notch circuit in which a second inductance element L2 and a second capacitance element C2 are connected in parallel, and a first inductance element L1 and a first capacitance element C1 connected in parallel. And a method of configuring the first capacitance element C1. That is,
Rather than forming a conductor layer facing only in the laminating direction only for the first capacitance element C1, a conductor layer for the first inductance element and / or a conductor layer for the second capacitance element C2 is used. Make up. As a result, the number of electrode patterns can be reduced, space and size can be reduced, and the demultiplexing circuit can also satisfy the characteristics. In this branching circuit, when a specific frequency f1 is passed through the first terminal P1 and the second terminal P2, the insertion loss of the second notch circuit is configured to be the maximum at the frequency f1. When a specific frequency f2 is passed through the first terminal P1 to the third terminal P3, the insertion loss of the first notch circuit is maximized at the frequency f2. And a signal is not output to the second terminal P2, and the signal is split. Further, a capacitance element C3 is arranged between the second terminal P2 and the ground formed by the conductor layer to form a low-pass filter circuit, and an inductance element L3 is arranged between the third terminal P3 and the ground. It is desirable that a capacitance element C4 be connected in series to the third terminal P3 to improve the demultiplexing characteristics as a high-pass filter circuit.

In the laminated high-frequency device using the duplexer of the present invention, the second terminal P2 of the duplexer is connected to a first transmitting / receiving system including a diode switch with a built-in low-pass filter, and a third terminal P3. Is connected to a second transmission / reception system including a diode switch with a built-in low-pass filter. When a capacitance element C4 is connected in series to the third terminal P3 to form a high-pass filter circuit as described above, the second transmission / reception system is connected to the capacitance element C4.

【Example】

FIG. 3 is an exploded perspective view showing one embodiment of a laminated high-frequency component using the duplexer according to the present invention. This laminated high-frequency component is a laminated high-frequency component having a built-in duplexer formed by using a sheet laminating method. First, the insulator layer 12 on which the ground pattern electrode 41 is formed is disposed below. Hereinafter, the insulator layer is a ceramic green sheet using a ceramic dielectric material having a dielectric constant of 8 that can be fired at a low temperature of 950 ° C. or lower, and the pattern electrode is formed by printing a conductive material mainly composed of Ag paste. ing. Conductive layers constituting an antenna switch circuit are formed on the upper insulating layers 8 to 11. An insulator layer 7 having a ground electrode 40 formed thereon is disposed thereon, and the ground electrode 40 is connected to external terminals 61, 63, 65, 67, 6.
9, 71, 73, and 75 are provided so as to be connected thereto.

An insulator layer 6 on which pattern electrodes 22 and 23 for forming a capacitance element are formed is laminated thereon. This pattern electrode 22 is connected to an upper-layer pattern electrode 31 for forming an inductor by a through-hole electrode. The pattern electrode 23 is connected to the uppermost pattern electrode 51 by a through hole. The capacitance element C3 of the equivalent circuit of FIG. 1 is configured between the pattern electrode 22 for forming the capacitor and the ground electrode 40. An insulator layer 5 on which a pattern electrode 24 for forming a capacitor is formed is laminated thereon. The capacitance element C4 of the equivalent circuit is formed between the capacitor forming pattern electrodes 23 and 24. An insulator layer 4 on which a pattern electrode 25 for forming a capacitance element is formed is laminated thereon. This pattern electrode 2
5 has a lead portion connected to an external terminal 62 (represented as P1 in FIG. 1). The pattern electrodes 24 and 25 for forming the capacitance element constitute a capacitance element C2 of the equivalent circuit. The pattern electrodes 31, 32, 3 for forming the inductance element
The insulator layer 3 on which the layer 3 is formed is laminated. Further, the insulator layer 2 on which the pattern electrodes 34 and 35 for inductance formation are formed is laminated thereon. The pattern electrodes 31, 34 are connected by through holes. These pattern electrodes 31, 3
4 forms the inductance element L1 of the equivalent circuit. Further, the pattern electrodes 32 and 35 are connected by through-hole electrodes, and one end of the pattern electrode 35 and the pattern electrode 34 are connected to each other and have a lead portion so as to be connected to the external terminal 62 (P1). These pattern electrodes 32 and 35 form an inductance element L2 of an equivalent circuit. Further, the pattern electrode 33 has a lead portion so as to be connected to an external terminal. The pattern element 33 forms the inductance element L3 of the equivalent circuit. Further, the pattern electrode 25 and the pattern electrodes 31 and 34 are configured to be substantially opposed to each other in the laminating direction with an insulating layer interposed therebetween, thereby forming the capacitance element C1 of the equivalent circuit. Here, the capacitance C1 is constituted by a capacitance formed between the pattern electrodes 25 and 31, and a capacitance formed between the pattern electrodes 31 and 34. Depending on the required capacitance, these structures may be composed of, for example, only the capacitance formed between the pattern electrodes 25 and 31, or only the capacitance formed between the pattern electrodes 31 and 34. Also, the electrode pattern for the inductance element may be divided into three or more layers, and the capacitance between them may be used.

The pattern electrode forming the inductance element can be appropriately selected from a meander line, a spiral line, etc., and may be formed on one layer, or may be formed on two or more layers and connected by through holes or the like. May be. The pattern electrode for forming the capacitance element may be formed by facing two electrodes, but may be formed by facing three or more electrodes. Further, the insulator layer is not limited to a material having a dielectric constant of 8. The preferred dielectric constant is 5-15. Then, the insulator layer 1 on which the pattern electrode 51 corresponding to P3 of the equivalent circuit and the pattern electrode 52 corresponding to P2 of the equivalent circuit are laminated thereon. The laminated body is integrally fired at about 900 ° C., the external electrodes are formed on the side surfaces, and the pattern electrodes (land electrodes) formed on the outer surface of the laminated body are connected to diodes 101a, 101b, 101c, 101d, chip capacitors 100a, 100b, 100c, and 100d, and the first frequency band f1 shown in FIG.
MHz, the second frequency band f2 is 1710 to 1880 MH
Thus, a 6750-size laminated high-frequency component used for a dual-band mobile phone was constructed. Further, a conventional multilayer high-frequency component in which the capacitance element C1 of the first notch circuit was formed by a pair of planar electrode patterns was also prepared.

FIG. 5 shows a frequency characteristic diagram of the microwave branching circuit portion, and FIG. 6 shows a frequency characteristic diagram of the branching circuit portion of the conventional laminated high-frequency component. As shown in FIG. 6, in the conventional device, the return loss characteristic has a frequency peak at a desired frequency 9.
It is lower than 60 MHz. For this reason, the insertion loss characteristic also shifts to a low frequency range, and is 0.5 to 960 MHz.
It can be seen that the insertion loss characteristic is inferior to about 0.6 dB. In this embodiment, as shown in FIG. 5, the peak frequency of the return loss characteristic is located at a frequency higher by about 100 MHz than the peak frequency of the attenuation characteristic. For this reason, the insertion loss characteristic at 0.1% at 960 MHz is lower than that of the conventional example.
It can be seen that the value is as good as about 0.2 dB.
Also, excellent insertion loss characteristics were obtained as a laminated high-frequency component. In the present embodiment, the first frequency band f1 is 880 to 960 MHz, and the second frequency band f2 is 1710 MHz.
Although the duplexer and the laminated high-frequency component using the same are also used according to the present invention, for example, the second frequency band f2 is 1850 to 1990 MHz, and the first and second frequencies are other frequency bands. Even if there is, it can be carried out similarly.

[0012]

According to the present invention, a duplexer is formed by a laminated structure, and a simple circuit configuration in which two notch circuits of an inductance element and a capacitance element are combined. Since it is possible to reduce the number of pattern electrodes for forming the capacitance element constituting the notch circuit, it is possible to obtain a compact duplexer with good demultiplexing characteristics and insertion loss characteristics and a multilayer high-frequency component using the same. Can be done.

[Brief description of the drawings]

FIG. 1 is an equivalent circuit diagram of an embodiment according to the present invention.

FIG. 2 is a block diagram of one embodiment according to the present invention.

FIG. 3 is an exploded perspective view of one embodiment according to the present invention.

FIG. 4 is a perspective view of one embodiment according to the present invention.

FIG. 5 is a frequency characteristic diagram of one embodiment according to the present invention.

FIG. 6 is a frequency characteristic diagram of a conventional example.

FIG. 7 is an equivalent circuit diagram of a conventional example.

FIG. 8 is a block diagram of a conventional example.

FIG. 9 is a block diagram of a conventional example.

[Explanation of symbols]

1,2,3,4,5,6,7,8,9,10,11,1
2 Insulator layer 22, 23, 24, 25 Pattern electrode for forming a capacitance element 31, 32, 33, 34, 35 Pattern electrode for forming an inductance element

Continued on front page F term (reference) 5J103 AA05 AA21 CB00 CB07 DA00 DA14 DA16 DA17 EA03 EA05 5K011 AA00 DA00 DA27 JA01 KA00 KA18

Claims (5)

[Claims] 1. A duplexer in which an insulator layer and a conductor layer are stacked and integrated to form a duplexer with an inductance element and a capacitance element formed of the conductor layer in a laminated element body. One end of a first notch circuit that connects the first inductance element and the first capacitance element in parallel, and one end of a second notch circuit that connects the second inductance element and the second capacitance element in parallel Wherein the first capacitance element of the demultiplexer circuit is insulated from a conductor layer forming the first inductance element and a conductor layer forming the second capacitance element. A duplexer comprising a capacitance component obtained by being substantially opposed to a stacking direction via a body layer. 2. A duplexer in which an insulator layer and a conductor layer are stacked and integrated to form a duplexer with an inductance element and a capacitance element formed of the conductor layer in a laminated element body. One end of a first notch circuit that connects the first inductance element and the first capacitance element in parallel, and one end of a second notch circuit that connects the second inductance element and the second capacitance element in parallel Wherein the first capacitance element of the branching circuit is formed by dividing a conductor layer forming the first inductance element into at least two insulator layers. A duplexer characterized in that the duplexer is configured using a capacitance component obtained by substantially opposing conductive layers formed in the stacking direction. 3. A duplexer in which an insulator layer and a conductor layer are stacked and integrated to form a duplexer with an inductance element and a capacitance element formed by the conductor layer in a laminated element body. One end of a first notch circuit that connects the first inductance element and the first capacitance element in parallel, and one end of a second notch circuit that connects the second inductance element and the second capacitance element in parallel Wherein the first capacitance element of the branching circuit is formed by dividing a conductor layer forming the first inductance element into at least two insulator layers. Component obtained by causing the conductor layers formed by the above to substantially oppose in the laminating direction, the conductor layer constituting the first inductance element and the second conductor layer.
A duplexer characterized in that the duplexer is formed by using a capacitance component obtained by substantially opposing a conductor layer constituting the capacitance element in the laminating direction via an insulator layer. 4. A low-pass filter circuit in which a capacitance element is arranged between the other end of the first notch circuit and the ground formed by the conductor layer, and between the other end of the second notch circuit and the ground. Place an inductance element in the
The duplexer according to any one of claims 1 to 3, wherein a capacitance element is further connected in series to form a high-pass filter circuit. 5. A laminated element provided with any one of claims 1 to 4, wherein a plurality of land electrodes are arranged on one or both sides of the laminated body, and an electronic component is connected to the land electrodes. Laminated high frequency components.