JP2001101930A - Oxide superconducting laminated substrate, method for producing the same, and method for producing superconducting integrated circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an oxide superconducting crystal substrate or a dielectric substrate having high flatness and high crystallinity used as an electronic device substrate on which an insulating film or a conductive film for a circuit is formed. It is possible to prevent cracks from being generated in the oxide superconducting crystal substrate due to heat treatment when forming an insulating film or a conductive film, and to easily form electrodes and wirings formed on upper and lower substrates. An object is to solve at least one of the problems that can be connected. SOLUTION: An oxide superconducting laminated substrate 1 in which an oxide superconducting crystal substrate 3 having high flatness and high crystallinity and a high-strength reinforcing crystal substrate 5 are thermocompression-bonded.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an oxide superconducting laminated substrate which can be used as a substrate material for electronic devices such as superconducting devices, a method for producing the same, and a method for producing a superconducting integrated circuit.

[0002]

2. Description of the Related Art Generally, when a superconductor is used, high-frequency surface resistance can be reduced, and when a superconducting tunnel effect element is used, high-speed functional operation can be performed with low power consumption.
Attempts have been made to apply a superconductor having such characteristics to an electronic device having a high-frequency circuit. An example of a superconducting device using a superconductor is a superconducting integrated circuit. This superconducting integrated circuit is roughly represented by Y-Ba-Cu-
A wiring made of a superconducting thin film is formed on a superconducting crystal substrate made of an O-based oxide superconducting single crystal or an oxide superconducting polycrystal via an insulating layer.

A conventional method of manufacturing a superconducting integrated circuit having such a structure is as follows: a Y-Ba-Cu
A rod made of a -O-based oxide superconducting single crystal or an oxide superconducting polycrystal is formed, and then this rod is cut to produce a plate-shaped oxide superconducting crystal substrate. A target superconducting integrated circuit has been obtained by forming an insulating film and a superconducting thin film by a thin film multilayering technique using a film forming technique such as a phase deposition method, and forming a superconducting circuit pattern by photolithography. Further, the substrate is heated as needed to improve superconducting characteristics such as critical current density of a superconducting thin film constituting a superconducting circuit.

[0004]

However, in the conventional method for manufacturing a superconducting integrated circuit, a heat treatment for heating a substrate when forming an insulating film or a superconducting thin film for a circuit on an oxide superconducting crystal substrate, or In addition, since heat treatment for heating the substrate is performed in order to improve the superconducting characteristics, cracks and the like are generated in the superconducting substrate due to thermal stress due to the heat treatment, and there is a problem that the yield is deteriorated. In the case of manufacturing a large superconducting integrated circuit, the above-mentioned problem was more remarkable. In addition, when two oxide superconducting crystal substrates, each of which is made of a thin film such as an electrode made of a superconducting thin film or an insulating film formed by a thin film multilayer technology, are opposed to each other, and the electrodes of the upper and lower oxide superconducting crystal substrates are connected to each other. On the other hand, if the surface of the oxide superconducting crystal substrate has irregularities, it has been difficult to bond and connect electrodes and wiring made of superconducting thin films provided on the upper and lower oxide superconducting substrates. that is,
The thickness of the thin film deposited on the oxide superconducting crystal substrate is limited to a few mm or less due to the crystallinity of the thin film or the film forming conditions. Is caused.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has been made of an oxide superconducting crystal having high flatness and high crystallinity which is used as an insulating film or a substrate for an electronic device on which a conductive film for a circuit is formed. A substrate or a dielectric substrate, which prevents cracks from being generated in the oxide superconducting crystal substrate due to heat treatment when forming an insulating film or a conductive film, and is formed on upper and lower substrates. It is an object of the present invention to solve at least one of the problems of easily connecting electrodes and wirings.

[0006]

In order to achieve the above object, an oxide superconducting crystal substrate made of an oxide superconducting single crystal or an oxide superconducting crystal and a reinforcing crystal substrate are thermocompression-bonded. The oxide superconducting laminated substrate is adopted. As a means for producing the oxide superconducting laminated substrate having the above-mentioned structure, an oxide superconducting crystal substrate made of an oxide superconducting single crystal or an oxide superconducting polycrystal produced by a pulling method and a reinforcing crystal substrate are brought into contact with each other to perform heat treatment. To fix the contact interface between the oxide superconducting crystal substrate and the reinforcing crystal substrate, thereby adopting a method for manufacturing an oxide superconducting laminated substrate. In addition, as a method for manufacturing the oxide superconducting laminated substrate having the above structure, both surfaces of an oxide superconducting crystal substrate made of an oxide superconducting single crystal or an oxide superconducting polycrystal prepared by a pulling method are sandwiched between reinforcing crystal substrates. Thereafter, a heat treatment is performed, the reinforcing crystal substrate is fixed to both surfaces of the oxide superconducting crystal substrate, and the oxide superconducting crystal substrate is cut in parallel with the surface direction. Is adopted.

Further, in order to solve the above-mentioned object, an oxide superconducting crystal substrate made of an oxide superconducting single crystal or an oxide superconducting polycrystal, and a reinforcing crystal substrate having an oxide superconducting thin film formed on the surface are provided. An oxide superconducting laminated substrate characterized in that the oxide superconducting thin film and the oxide superconducting crystal substrate are thermocompression-bonded.
As a method of manufacturing the oxide superconducting laminated substrate having the above configuration, an oxide superconducting crystal substrate made of an oxide superconducting single crystal or an oxide superconducting polycrystal prepared by a pulling method, and an oxide superconducting thin film are formed on the surface. An oxide superconducting laminated substrate characterized by fixing the contact interface between the oxide superconducting crystal substrate and the oxide superconducting thin film by subjecting the oxide superconducting thin film of the reinforcing crystal substrate to heat treatment by contacting the same. Is adopted.

In the method for manufacturing an oxide superconducting laminated substrate having any one of the above structures, the heat treatment is preferably performed under a load. Further, the load applied during the heat treatment is preferably 5 to 1000 g / cm ² . Further, in the method for manufacturing an oxide superconducting laminated substrate having any one of the above structures, the surface roughness of at least one contact surface among the contact surfaces between the oxide superconducting crystal substrate and the reinforcing crystal substrate is set to 0.01. It is preferable to set the thickness to 50 μm. Still further, in the method for manufacturing an oxide superconducting multilayer substrate having any one of the above structures, the heat treatment temperature at the time of performing the heat treatment may be an oxide superconducting single crystal or an oxide superconducting polycrystal constituting the oxide superconducting crystal substrate. Preferably, a temperature lower than the melting point (M _p ) and higher than M _p -100 (K) is employed. The heat treatment temperature at the time of performing the heat treatment is a temperature lower than the decomposition temperature of the oxide superconducting single crystal or the oxide superconducting polycrystal constituting the oxide superconducting crystal substrate and higher than the decomposition temperature −100 (K). May be adopted.

Further, in the method for manufacturing an oxide superconducting laminated substrate having any one of the above structures, means may be employed in which the rate of temperature rise and fall during the heat treatment is in the range of 10 to 500 K / hour. preferable. Further, in the method for producing an oxide superconducting laminated substrate having any one of the above configurations,
It is preferable to employ means for setting the heat treatment time in the range of 1 to 300 hours.

A method of manufacturing a superconducting integrated circuit according to the present invention comprises forming a dielectric thin film and an oxide superconducting thin film on an oxide superconducting laminated substrate produced by the method for producing an oxide superconducting laminated substrate having any one of the above constitutions. After forming the film, the oxide superconductor thin film is patterned into a wiring shape to form an oxide superconductor wiring. Further, the method for manufacturing a superconducting integrated circuit according to the present invention comprises a first and a second oxide superconducting layer formed by forming an oxide superconducting wiring made of an oxide superconducting single crystal or an oxide superconducting polycrystal on a dielectric substrate. After forming an insulating film and an oxide superconductor thin film on at least one of the laminated substrates, the oxide superconductor thin film is patterned into a wiring shape to form an oxide superconductor circuit. The oxide superconductors of the first and second oxide superconducting laminated substrates are subjected to a heat treatment by bringing the oxide superconducting wires of the second oxide superconducting laminated substrate into contact with each other directly or via an oxide superconducting thin film. Wirings are fixed to each other. The oxide superconducting thin film, oxide superconducting single crystal, and oxide superconducting polycrystal in the present invention mean not only those having superconducting properties but also those capable of producing superconducting properties by heat treatment.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of the oxide superconducting laminated substrate of the present invention and a method for manufacturing the same will be described. FIG. 1 is a sectional view showing a first embodiment of an oxide superconducting laminated substrate according to the present invention. This oxide superconducting laminated substrate 1
The oxide superconducting crystal substrate 3 and the reinforcing crystal substrate 5 are thermocompression-bonded.

The oxide superconducting crystal substrate 3 is composed of an oxide superconducting single crystal or an oxide superconducting polycrystal,
These crystals are crystals of the oxide superconducting compound represented by the following chemical formula (1). R _{1 + x} Ba _2−x Cu ₃ O _y (1) (where R is Y, Nd, Sm, Gd, Eu, Yb, P
r is one or more elements selected from r, y is 6 to 7, and x is 0 to 1. )

The material forming the reinforcing crystal substrate 5 has a melting point higher than the melting point M _p (peritectic temperature; T _p ) of the oxide superconducting single crystal or the oxide superconducting polycrystal constituting the oxide superconducting crystal substrate 3. A dielectric having a higher strength than the oxide superconducting crystal substrate 3 is preferable. For example, MgO, SrTiO ₃ , yttrium-stabilized zirconia (YSZ), or the like is used. Among them, it is preferable to use an MgO single crystal having a larger thermal expansion coefficient than the oxide superconducting crystal substrate 3.

Next, a first method for manufacturing the oxide superconducting laminated substrate 1 of the first embodiment will be described with reference to FIGS. First, a rod made of an oxide superconducting single crystal or an oxide superconducting polycrystal having the above composition is produced by a pulling method, and then the rod is cut to produce a plate-shaped oxide superconducting crystal substrate 3a. Here, the plate-shaped oxide superconducting crystal substrate 3a is set to be thicker because it is divided into two in a later-described step, and in this embodiment, the thickness of the target oxide superconducting crystal substrate 3 is twice or more. The thickness is set. The rod made of oxide superconducting polycrystal may be manufactured by a method other than the pulling method. The plate-shaped oxide superconducting crystal substrate 3a produced as described above
Among the surfaces described above, the surface to be bonded to the reinforcing crystal substrate 3 should have a surface roughness within the range of 0.01 μm to 50 μm by rough polishing to improve the adhesiveness with the reinforcing crystal substrate 3. This is preferable because the surface flatness of the oxide superconducting crystal substrate 3 of the oxide superconducting multilayer substrate 1 can be improved. Further, the plate-shaped oxide superconducting crystal substrate 3a
It is preferable that the surface on which the wiring and the insulating film are formed is finely polished from the viewpoint that the surface flatness can be improved. When cutting the rod here,
Cutting such that the cleavage plane of the oxide superconducting single crystal or the oxide superconducting polycrystal becomes the surface of the substrate 3 can improve the adhesiveness to the reinforcing crystal substrate 3 and provide an oxide having good surface flatness. It is more preferable in that a superconducting crystal substrate 3 can be obtained.

Next, a laminated body 25 is prepared by sandwiching both surfaces of the oxide superconducting crystal substrate 3a between the reinforcing crystal substrates 5 and 5. The surface roughness of each of the reinforcing crystal substrates 5 used here is adjusted to be in the range of 0.01 μm to 50 μm by polishing, in that the adhesiveness to the oxide superconducting crystal substrate 3a can be improved. preferable. Then, the laminate 25
Is subjected to a heat treatment under load. For the heat treatment here, a heating furnace 20 as shown in FIG. 2 is used. This heating furnace 20
A processing vessel 21 made of alumina, a heater 22 for heating the processing vessel from the outside, and a thermocouple 23 for measuring the temperature inside the processing vessel 21 are schematically configured.

In order to heat-treat the laminate 25 under a load using the heating furnace 20 configured as described above, the laminate 25 manufactured as described above is placed in a processing vessel 21 and then the laminate 25 is heated. The weight 30 is placed on the upper surface 25, the temperature is raised from room temperature to the heat treatment temperature by the heater 22, the temperature is kept at the heat treatment temperature for a predetermined time (heat treatment time), and then the temperature is lowered to room temperature.
FIG. 3 is a diagram showing a heat pattern when the laminate 25 is subjected to a heat treatment. The horizontal axis represents time, and the vertical axis represents temperature.
In FIG. 3, the solid line indicates the temperature inside the processing container 21. This temperature can be measured by the thermocouple 23. The broken line indicates the temperature (M _p ) obtained by subtracting 100 ° C. from the melting point M _p (or peritectic temperature; T _p ) of the oxide superconducting single crystal or the oxide superconducting polycrystal constituting the oxide superconducting crystal substrate 3a. -1
00), the broken line indicates the melting point M of the oxide superconducting single crystal or the oxide superconducting polycrystal constituting the oxide superconducting crystal substrate 3a.
_p (peritectic temperature; T _p ) and the broken line indicate the melting point of the material constituting the reinforcing crystal substrate. Alternatively, the dashed line indicates the temperature obtained by subtracting 100 ° C. from the decomposition temperature of the oxide superconducting single crystal or the oxide superconducting polycrystal constituting the oxide superconducting crystal substrate 3a, and the dashed line indicates the oxidation forming the oxide superconducting crystal substrate 3a. It may be the decomposition temperature of the superconducting single crystal or oxide superconducting polycrystal.

The load applied during the heat treatment is preferably 5 to 1000 g / cm ² . Load is 5
is not preferable because the bond strength is less than g / cm ² is insufficient, undesirably like cracks exceeds 1000 g / cm ² is generated. The heat treatment temperature here is the melting point M _p (or peritectic temperature; T _p ) of the oxide superconducting single crystal or the oxide superconducting polycrystal constituting the oxide superconducting crystal substrate 3a.
Lower, and it is preferable to set the M _p -100 temperature higher than (K). If the heat treatment temperature is higher than the melting point M _p, is not preferable because the oxide superconductor will be melted, Below the M _p -100 (K), it is not preferred because the bonding strength is insufficient. Also, the heat treatment temperature here is
The temperature may be lower than the decomposition temperature of the oxide superconducting single crystal or the oxide superconducting polycrystal constituting the oxide superconducting crystal substrate 3a and higher than the decomposition temperature −100 (K).

The rate of temperature rise up to the heat treatment temperature during the heat treatment is preferably in the range of 1 to 500 K / hour, more preferably in the range of 10 to 50 K / hour. If the heating rate up to the heat treatment temperature is less than 1 K / hour, twin formation becomes remarkable in an oxygen atmosphere,
In addition, the processing time is too long, which is not preferable. If the heating rate exceeds 500 K / hour, cracks occur frequently due to thermal stress, which is not preferable.

The heat treatment time is preferably in the range of 1 to 300 hours, more preferably 10 to 1 hour.
Within 50 hours. If the heat treatment time is less than 1 hour, welding becomes insufficient, which is not preferable. If it exceeds 300 hours, the processing time becomes too long, which is not preferable.

Cooling rate when cooling from the above heat treatment temperature
Is preferably in the range of 1 to 500 K / hour
And more preferably in the range of 10 to 50 K / hour.
You. When the cooling rate is less than 1 K / hour, the processing time is long.
It is preferable because it becomes too thick and twin generation increases
When the cooling rate exceeds 500K / hour,
Many cracks occur due to stress due to difference, thermal stress, etc.
Not preferred. Atmosphere when performing the above heat treatment
Can be performed in the atmosphere, but performed in a low oxygen atmosphere
And the above oxide superconducting single crystal or oxide superconducting polycrystal
Melting point M _p(Or peritectic temperature; T_p) Or decomposition temperature
Can be lowered, and the heat treatment temperature can be lowered
It is preferred in that respect.

When the above-described heat treatment is applied to the laminate 25 under a load, the reinforcing crystal substrates 5 and 5 can be fixed to both surfaces of the oxide superconducting crystal substrate 3a. This is because when the laminate 25 is subjected to a heat treatment under a load, the constituent particles of the oxide superconducting crystal substrate 3a near the contact interface and the reinforcing crystal substrate 5
The air existing in the gaps between the constituent particles is activated and moves, so that the molecules forming the constituent particles of the oxide superconducting crystal substrate 3a and the molecules forming the constituent particles of the reinforcing crystal substrate 5 have an intermolecular force. Works to bond the oxide superconducting crystal substrate 3a to the reinforcing crystal substrates 5 and 5. Then
When the stacked body 25 is taken out of the processing container 21 and the oxide superconducting crystal substrate 3a of the stacked body 25 is cut parallel to the surface direction as shown in FIG. 4, two oxide superconducting stacked substrates 1 are obtained at one time. . Here, the oxide superconducting crystal substrate 3a
When cutting is performed, it is possible to improve the surface flatness by cutting so that the cleavage plane of the oxide superconducting single crystal or the oxide superconducting polycrystal becomes the surface of the oxide superconducting crystal substrate 3 of the laminated substrate 1 where the cleavage plane is obtained. It is preferred in that respect. Further, the surface of the oxide superconducting crystal substrate 3 of the oxide superconducting laminated substrate 1 obtained as described above is further finely polished as necessary, so that the surface flatness can be improved. preferable.

If the superconducting properties of the oxide superconducting crystal substrate 3 of the thus obtained oxide superconducting laminated substrate 1 are insufficient, the substrate 1 is placed in an oxygen atmosphere for 500 hours.
An annealing process of heating to ゜ C to 600 ゜ C is performed.
This annealing treatment may be performed during a temperature lowering step of a heat treatment for bonding the oxide superconducting crystal substrate 3 and the reinforcing crystal substrate 5. Further, in the above embodiment, the case where the heat treatment for bonding the oxide superconducting crystal substrate 3a and the reinforcing crystal substrate 5 is performed under a load has been described.
By increasing the heat treatment temperature within the above-mentioned range, bonding can be performed without a special load, that is, by its own weight.

Next, the oxide superconducting laminated substrate 1 of the embodiment
The second manufacturing method will be described. The reinforcing crystal substrate 5 is laminated on one side of the oxide superconducting crystal substrate 3a manufactured in the same manner as the first manufacturing method described above, and heat-treated in the same manner as in the first manufacturing method. When the contact interface between crystal substrate 3a and reinforcing crystal substrate 5 is fixed, oxide superconducting laminated substrate 1 as shown in FIG. 1 is obtained. In the second manufacturing method, since the step of cutting the oxide superconducting crystal substrate 3a in the plane direction is not required, the thickness of the substrate 3a is smaller than that used in the first manufacturing method.

In the oxide superconducting laminated substrate 1 of the first embodiment, an oxide superconducting crystal substrate 3 having high flatness and high crystallinity and a high-strength reinforcing crystal substrate 5 are thermocompression-bonded. Therefore, the strength of the oxide superconducting crystal substrate 3 can be improved, and even if heat treatment is performed when an insulating film or a conductive film is formed on the laminated substrate 1, cracks generated in the oxide superconducting crystal substrate 3 can be obtained. Can be greatly reduced, and the yield in the electronic device process can be significantly improved. Further, since the oxide superconducting crystal substrate 3 of the oxide superconducting laminated substrate 1 has high flatness and high crystallinity, an insulating film, a superconducting wiring and an electrode formed on the oxide superconducting crystal substrate 3 are formed. The surface of the substrate is unlikely to have irregularities. Therefore, after preparing two oxide superconducting laminated substrates on which such an insulating film, a superconductor wiring and an electrode are formed, these are opposed to each other, and heat treatment is performed. Electrodes and wiring can be easily connected. In the above embodiment, the case where the substrate 3 made of the oxide superconducting single crystal or the oxide superconducting polycrystal is manufactured by the pulling method has been described, but the oxide superconducting single crystal or the oxide having a certain thickness is described. A substrate manufactured by another method may be used as long as a substrate made of superconducting polycrystal can be manufactured. In addition, the case where the weight 30 is placed on the laminate 25 as a load when heat treatment for thermocompression bonding the oxide superconducting crystal substrate 3 and the reinforcing crystal substrate 5 is described.
The heat treatment may be performed while pressing the laminate 25 from both sides with a spring member such as a stainless spring.

Next, a second embodiment of the oxide superconducting laminate substrate of the present invention will be described. FIG. 5 is a sectional view showing an oxide superconducting multilayer substrate according to the second embodiment. The oxide superconducting laminated substrate 31 includes an oxide superconducting crystal substrate 33 made of an oxide superconducting single crystal or an oxide superconducting polycrystal,
A reinforcing crystal substrate (dielectric thin plate) 35 having an oxide superconducting thin film 44 formed on the surface thereof is formed by thermocompression bonding of the oxide superconducting thin film 44 and the oxide superconducting crystal substrate 33. The oxide superconducting crystal substrate 33 is particularly different from the oxide superconducting crystal substrate 3 used in the first embodiment in that a section of the surface of the plate-shaped oxide superconducting crystal substrate manufactured by the pulling method is partially cut away. It is trapezoidal. Although the plane orientation of the substrate 33 can be arbitrarily determined,
A c-plane substrate having a short magnetic field penetration length is the best in reducing the wiring inductance.

The reinforcing crystal substrate 35 differs from the reinforcing crystal substrate 5 used in the first embodiment in that a fitting hole 35a for receiving the oxide superconducting crystal substrate 33 is formed. The fitting hole 35a is formed to have a larger diameter from the upper surface side to the lower surface side. An oxide superconductor thin film 44 is formed on the surface of the fitting hole 35a. The oxide superconducting crystal substrate 33 is fitted into the fitting hole 35a in which the oxide superconducting thin film 44 of the reinforcing crystal substrate 35 is formed, and is thermocompression-bonded.

Next, a method for manufacturing the oxide superconducting laminated substrate 31 of the second embodiment will be described. First, a plate-shaped oxide superconducting crystal substrate prepared in the same manner as described above is formed by using a machining method using ultrasonic waves, a laser, a lathe, or the like, or a chemical etching method such as dry etching or wet etching. The oxide superconducting crystal substrate 33 is manufactured by cutting into a trapezoidal cross section. On the other hand, a reinforcing substrate 35 having a fitting hole 35a for fitting the oxide superconducting crystal substrate 33 formed by machining is prepared.
An oxide superconductor thin film 34 made of oxide superconducting polycrystal is formed on the surface of the substrate by a film forming technique such as a vapor deposition method.

Next, after the oxide superconducting crystal substrate 33 is fitted in the fitting hole 35a of the reinforcing substrate 35, the first
A heat treatment is performed in the same manner as in the method of manufacturing the oxide superconducting laminated substrate of the embodiment, and the oxide superconducting crystal substrate 33 and the oxide superconducting thin film 34 are bonded by sintering. The superconducting multi-layer substrate 31 is obtained. Note that the surface of the oxide superconducting multilayer substrate 31 thus obtained is preferably polished and flattened in the same manner as described above.

Oxide superconducting laminated substrate 31 of second embodiment
In this, an oxide superconducting crystal substrate 33 having high flatness and high crystallinity and an oxide superconducting thin film 34 formed on the surface of a high-strength reinforcing crystal substrate 35 are thermocompression-bonded. Therefore, the strength of the oxide superconducting crystal substrate 33 can be improved, and even if heat treatment is performed when an insulating film or a conductive film is formed on the laminated substrate 31, cracks generated in the oxide superconducting crystal substrate 33 are significantly reduced. And the yield in the electronic device process can be significantly improved. In the first and second embodiments, the oxide superconducting crystal substrate 3 is made of R—Ba—Cu—O (where R is Y, Nd,
1 selected from Sm, Gd, Eu, Yb, and Pr
(Or two or more kinds of elements) -based oxide superconducting single crystal or polycrystal has been described,
In the present invention, the substrate 3 is made of AB-Cu-O (where A is L
a, Ce, Y, Sc, Yb, etc., represents at least one group IIIa element in the periodic table, and B represents periodic table IIa, such as Sr, Br, etc.
The present invention can also be applied to a case where it is composed of an oxide superconducting single crystal or a polycrystal of the oxide superconducting type (which indicates at least one group element).

Next, a method for manufacturing a superconducting integrated circuit according to the present invention.
The embodiment will be described. FIG. 6 shows an embodiment of the present invention.
Superconductor integrated manufactured by manufacturing method of conductive integrated circuit
It is a figure which shows a circuit, (A) is a side view, (B) is a top view.
It is. This superconductor integrated circuit 50 has a copper cavity.
The oxide superconducting laminate of the second embodiment shown in FIG.
A substrate 31 is accommodated, and MgO or the like is placed on the laminated substrate 31.
And a dielectric thin film 53 is formed.
YBa on 53_TwoCu_ThreeO _yOxide superconductor arrangement consisting of
A wire 54 is formed, and a central conductor 56 is connected to the wire 54.
That's what you get.

In the inclined portion of the reinforcing crystal substrate 35,
It has a tapered structure in which the wiring width changes depending on the position. Further, since the characteristic impedance of the superconducting microstrip wiring is determined by the ratio of the thickness of the dielectric to the wiring pattern, in order to achieve impedance matching, the pattern of the wiring 54 is thick on the reinforcing crystal substrate 35 made of the dielectric. ,
Above the reinforcing crystal substrate 35, that is, on the oxide superconducting crystal substrate 33, the pattern of the wiring 54 is thin. With such a structure, the impedance of the wiring 54 made of a superconductor is kept constant,
External peripheral connector and superconductor wiring (superconducting circuit) 5
4 can be easily performed.

In order to manufacture such a superconductor integrated circuit 50, first, a dielectric made of the same material as the reinforcing crystal substrate 35 is placed on the oxide superconducting laminated substrate 31 manufactured by the above-described manufacturing method. A thin film 53 and an oxide superconductor thin film made of oxide superconducting polycrystal are formed by laser vapor deposition (PLD).
After forming a film by a vapor deposition method such as the above, the oxide superconductor thin film is patterned into a wiring shape by photolithography to form an oxide superconductor wiring 54. Here, when the dielectric thin film 53 and the oxide superconducting thin film are formed, the superconductivity of the oxide superconducting crystal substrate 33 is not deteriorated.
It is preferable to form a film while controlling the heating temperature and the oxygen partial pressure during the film formation. Next, the end of the center conductor 56 is led out from the copper cavity 52 onto the oxide superconductor wiring 54, and these are electrically connected. This way,
A superconductor integrated circuit 50 as shown in FIG. 6 is obtained.

This superconductor integrated circuit (superconducting integrated circuit)
By adopting the above configuration, the connection 50 can realize a connection with a small signal loss due to high-frequency reflection, and can mount a superconducting circuit that operates at high speed. Further, this superconductor integrated circuit 50 uses the oxide superconducting laminated substrate 31 manufactured as described above,
Even if heat treatment is performed when forming the dielectric thin film 53 and the oxide superconducting thin film on the laminated substrate 31, cracks generated in the oxide superconducting crystal substrate 33 can be significantly reduced, and the yield in the electronic device process can be reduced. Can be significantly improved.

Next, another embodiment of the method for manufacturing a superconducting integrated circuit of the present invention will be described. 7A and 7B are diagrams illustrating a superconductor integrated circuit manufactured by a method of manufacturing a superconducting integrated circuit according to another embodiment, where FIG. 7A is a side view and FIG. 7B is a bottom view. This superconductor integrated circuit 60
Are formed on a dielectric substrate 65 by forming an oxide superconducting wiring 64 of an oxide superconducting polycrystal having the above-described composition on the opposing first and second oxide superconducting laminated substrates 6.
An insulating film (interlayer insulating film) 66 and an oxide superconducting circuit 67 are formed on a first oxide superconducting laminated substrate 61 located on the lower side of the first and second oxide superconducting substrates 61 and 62, and the first and second oxide superconducting circuits The oxide superconductor wirings 64, 64 of the laminated substrates 61, 62 are fixed to each other, and the central conductor 76 is connected to the oxide superconductor wiring 64 of the second oxide superconducting laminated substrate 62. First oxide superconducting laminated substrate 6 located on the lower side
1 is a second oxide superconducting laminated substrate 62 located on the upper side.
Smaller ones are used. Dielectric substrate 65
Is made of the same material as the above-mentioned reinforcing crystal substrate 5, SrTiO ₃ having a high dielectric constant, and the like.

By adopting such a structure, the inductance of the connecting portion has an area but has almost no thickness, that is, a length, and therefore, the wiring inductance of the connecting portion is extremely small. The superconductor integrated circuit (superconducting integrated circuit) 60 has the same junction residual resistance as the above-described superconducting integrated circuit 50, but the impedance matching between the external circuit and the oxide superconducting circuit 67 is achieved. Connection can be made easily. Therefore, according to the superconductor integrated circuit 60, the above-described configuration can realize connection with a small signal loss due to high-frequency reflection.

In order to manufacture such a superconductor integrated circuit 60, as shown in FIG. 8A, an oxide made of oxide superconducting polycrystal is formed on a dielectric substrate 65 by LPE (Liquid Phase Epitaxy). After forming the superconductor thin film 64a, the oxide superconductor thin film 64 is formed as shown in FIG.
a is removed by photolithography except for a portion to be an electrode pad, an oxide superconductor wiring 64 as an electrode pad is formed, and a first oxide superconducting laminated substrate 61 is manufactured. Here, the size of the electrode pad is, for example, about 0.5 mm in diameter. Next, as shown in FIG. 8C, a superconducting ground plane 68 is formed on the surface of the dielectric substrate 65 on which the oxide superconducting wiring 64 is formed by a vapor phase growth method.

Next, the superconducting ground plane 68 is patterned as shown in FIG. At this time,
The superconducting ground plane 68 around the oxide superconductor wiring 64 connected to the electrode (upper electrode) of the upper second oxide superconducting laminated substrate 62 is removed, and the electrical connection is cut off. In addition, a moat structure for weakening the effect of the magnetic flux trap is provided. Next, as shown in FIG. 8E, an interlayer insulating film 66 is formed on the superconducting ground plane 68 between the oxide superconducting wires 64, 64, and then on the superconducting ground plane 68 and the interlayer insulating film 66. After an oxide superconductor thin film is formed by a laser deposition method or the like, the oxide superconductor thin film is patterned to form an oxide superconductor circuit (oxide superconductor circuit) 67 as shown in FIG. I do.

On the other hand, the oxide superconductor wiring 64 is formed on the dielectric substrate 65 in the same manner as in the steps of FIGS. 8A and 8B, and the second oxide superconducting laminated substrate 62 is manufactured.
Next, the first and second oxide superconducting laminated substrates 61, 62
The oxide superconductor wirings 64, 64 are brought into contact with each other via an oxide superconductor circuit (oxide superconductor thin film) 67, and heat treatment is performed in the same manner as in the method of manufacturing a superconducting integrated circuit of the above-described embodiment. Then, the oxide superconductor wirings 64, 64 of the first and second oxide superconducting laminated substrates 61, 62 are connected to each other by sintering. Thereafter, when the oxide superconductor wiring 64 of the second oxide superconducting laminate substrate 62 is connected to the central conductor 76, a superconductor integrated circuit 60 as shown in FIG. 7 is obtained. According to the method for manufacturing a superconducting integrated circuit as described above,
With the above configuration, the wirings 64, 64 of the upper and lower oxide superconducting laminated substrates 61, 62 can be easily connected to each other.

[0039]

EXAMPLES Hereinafter, the present invention will be described specifically with reference to examples, but the present invention is not limited to the examples described below. (Experimental Example 1) After a rod made of a single crystal of YBa ₂ Cu ₃ O _y (decomposition temperature: 1010 ° C.) was prepared by a pulling method, this rod was cut, polished, and 8 mm long and 8 m wide.
A plate-shaped YBa ₂ Cu ₃ O _y crystal substrate having a thickness of 2.0 mm and a thickness of 2.0 mm was produced. Next, a laminate was prepared in which a plate-like MgO crystal substrate (melting point: 2830 ° C.) was sandwiched on both sides of a YBa ₂ Cu ₃ O _y crystal substrate.

Next, after placing the laminate in a processing vessel 21 as shown in FIG. 2, a weight 30 is placed on the laminate, and a heating rate of 100 ° C. is applied by the heater 22 while applying a load of 100 gf. Per hour, the temperature was raised from room temperature to 995 ° C., and the temperature was maintained for 20 hours.
By lowering the temperature from 995 ° C. to room temperature at 00 ° C./hour, the MgO crystal substrate was bonded to both surfaces of the YBa ₂ Cu ₃ O _y crystal substrate. Then, the YBa ₂ Cu ₃ O _y crystal substrate was cut in parallel with the surface direction to obtain two laminated substrates (Example 1). Next, the obtained laminated substrate of Example 1 was used as a comparative example 1, and the MgO crystal substrate was not bonded to Y.
A Ba ₂ Cu ₃ O _y crystal substrate (length 8 mm, width 8 mm, thickness 1.0 mm) is raised at 750 K / h as a heat history similar to that when forming an insulating film or a conductive film for a circuit. After heating at 750 ° C. for 3 hours, the temperature was lowered to room temperature at 750 K / h, and the density of cracks generated was examined. As a result, the density of cracks generated in the laminated substrate of Example 1 was:
1 / of the substrate of Comparative Example 1 not reinforced with the MgO crystal substrate
It turned out to be as low as 10. Therefore, it was clarified that the laminated substrate of Example 1 was excellent in the effect of preventing the occurrence of cracks due to the heat treatment when forming the insulating film and the conductive film, and that the strength was significantly improved.

(Experimental example 2)
The holding temperature when heat treating the laminated body under load is 950 °
Experimental Example 1 except that the temperature was changed from C to 1000 ° C.
Various laminated substrates were obtained in the same manner as described above. Next, the obtained product
YBa of layer substrate_TwoCu_ThreeO_yCrystal substrate and MgO crystal substrate
When the adhesion temperature was examined, the holding temperature was 990 ° C.
Those within the range of ~ 997 ° C have good adhesion,
In addition, when the holding temperature is 1000 ° C., YBa_TwoCu_ThreeO _y
The crystal substrate partially melts and the holding temperature is 950 ° C.
Thing is YBa_TwoCu_ThreeO_yCrystal substrate and MgO crystal substrate
It was found that it did not stick at all. From this, YBa
_TwoCu_ThreeO_ySubstrate made of single crystal and MgO crystal substrate
The heat treatment temperature for thermocompression bonding is from 990 ° C
A range of 997 ° C. has been found to be preferred.

(Experimental example 3) Y produced by the pulling-up method
Ba_TwoCu_ThreeO_yBy cutting a rod made of single crystal,
YBa_TwoCu_ThreeO_yWhen manufacturing a crystal substrate, YBa_TwoCu_Three
O_yCut or cut so that the cleavage plane of the single crystal becomes the surface
Is YBa_TwoCu_ThreeO_yMg crystal group on the surface of the crystal substrate
Polishing of the surface to be bonded to the plate is changed to rough polishing or mirror polishing.
Various laminated substrates were obtained in the same manner as in Experimental Example 1 except for the above.
Was. Next, the YBa of the obtained laminated substrate was_TwoCu_ThreeO_yCrystal base
When the adhesion between the plate and the MgO crystal substrate was examined,
The order in which the effect of improving adhesion is large is cleavage plane, rough polishing
Polishing (surface roughness 10μm), mirror polishing (surface roughness 1μm or less)
Bottom) and YBa _TwoCu_ThreeO_yRod made of single crystal
When cutting, YBa_TwoCu_ThreeO_yThe cleavage plane of the single crystal is
Is cut so that YBa has the best adhesion.
_TwoCu_ThreeO_yIt was found that a crystal substrate was obtained.

(Experimental Example 4) Y produced by the pulling-up method
When manufacturing a plate-like YBa ₂ Cu ₃ O _y crystal substrate by cutting a rod made of Ba ₂ Cu ₃ O _y single crystal, YBa ₂ Cu ₃
Cutting the cleavage plane of the O _y single crystal so as to be the surface, and setting the holding temperature when performing heat treatment under a load at 997 ° C.
A long-term pressure test was performed by preparing a laminated substrate in the same manner as in Experimental Example 1 except that the holding time was 140 hours and the load was 0.25 g / mm ² . Then, it was examined for adhesion to the substrate and the MgO crystal substrate made of YBa ₂ Cu ₃ O _y single crystals of the obtained multilayer substrate, YBa ₂ Cu ₃
It was found that the O _y crystal substrate and the MgO crystal substrate were in good contact with each other.

(Experimental example 5)
0.3mm thick YBa_TwoCu_ThreeO_yCross section of crystal substrate
It is cut into a shape, and YBa similar to FIG._TwoCu_ThreeO_ycrystal
A substrate was prepared. On the other hand, this YBa_TwoCu_ThreeO_yCrystal substrate
0.3mm thick with a fitting hole for fitting
A MgO crystal substrate is prepared and YBa is provided on the surface of the fitting hole.
_TwoCu_ThreeO _yOf polycrystalline thin film by laser evaporation
Was. The film forming condition here is 200 mToo at 740 ° C.
r, O_TwoThe film was formed in the inside.

Then, YBa was inserted into the fitting hole of the MgO crystal substrate.
_{After the 2} Cu ₃ O _y crystal substrate was fitted, the substrate was placed in a processing vessel 21 as shown in FIG. 2 in which the internal atmosphere was changed to an oxygen atmosphere. ° after the temperature was raised to C, after 2 hours at this temperature, by cooling from 920 ° C at a cooling rate of 100 ° C / time to room temperature, forming the YBa ₂ Cu ₃ O _y crystal substrate and the MgO crystal substrate The obtained polycrystalline thin film of YBa ₂ Cu ₃ O _y was sintered and bonded. After this, YBa ₂ Cu ₃ O
Of the surfaces of the _y- crystal substrate and the MgO crystal substrate, the surface on which the wiring was to be formed was polished and flattened to obtain the same laminated substrate as in FIG. 5 (Example 2). The holding temperature during heat treatment can be lowered by pressing the bonding surface of the YBa ₂ Cu ₃ O _y crystal substrate and the polycrystalline thin film of YBa ₂ Cu ₃ O _y from both sides, and when a stainless steel spring is used, Even at 900 ° C., bonding was possible. Further, the holding temperature during the heat treatment is 960.
When the temperature was increased to ゜ C or more, bonding was possible without a special load, that is, by its own weight.

Next, on the obtained laminated substrate of Example 2,
0.3 μm thick MgO thin film and 0.3 μm thick YB
A polycrystalline thin film of a ₂ Cu ₃ O _y was formed by a laser deposition method. Here, when forming the MgO thin film and the YBa ₂ Cu ₃ O _y thin film, 200 mTool at 740 ° C. (1 Torr is about 133 Pascal), O ₂ , so as not to deteriorate the superconductivity of the YBa ₂ Cu ₃ O _y crystal substrate. The film was formed in the inside. Then
The polycrystalline thin film of YBa ₂ Cu ₃ O _y was patterned into a wiring shape by photolithography to form a YBa ₂ Cu ₃ O _y wiring. The width of the YBa ₂ Cu ₃ O _y wiring is 0.3 μm at the center of the circuit and 0.3 m at the connection with the external circuit.
m. Next, a copper cavity 52 similar to that of FIG.
The end of the center conductor was led out onto the YBa ₂ Cu ₃ O _y wiring, and these were electrically connected to obtain a superconductor integrated circuit similar to that of FIG. By doing so, a K connector with good high-frequency transmission characteristics and good electrical connection characteristics could be obtained.

Next, the temperature dependence of the resistance between the connection surfaces of the obtained superconductor integrated circuit was examined. The resistance between the connection surfaces was measured by a four-terminal method. FIG. 9 shows the result. From the results shown in FIG. 9, it can be seen that the resistance sharply drops below 90K with the superconducting transition of the electrodes. However, looking at the electrode-voltage characteristics, the superconducting current does not flow, and a residual resistance remains between the electrodes. This is caused by the barrier layer at the grain boundary and does not affect the high frequency performance of the circuit. It can also be reduced by performing an appropriate surface treatment before bonding.

[0048]

As described above, according to the oxide superconducting laminated substrate of the present invention, the strength of the oxide superconducting crystal substrate having high flatness and high crystallinity can be improved by adopting the above structure. Even if a heat treatment is performed when an insulating film or a conductive film is formed on the laminated substrate, cracks generated in the oxide superconducting crystal substrate can be significantly reduced, and the yield in an electronic device process can be significantly improved. In addition, since the oxide superconducting crystal substrate of this oxide superconducting laminated substrate has high flatness and high crystallinity, the surface of the insulating film, wiring, or electrode formed on the oxide superconducting crystal substrate also Irregularities are unlikely to occur. Therefore, if two oxide superconducting laminated substrates on which such insulating films, wirings, and electrodes are formed are prepared, opposed, and heat-treated, the upper and lower electrodes and wirings can be easily connected.

Further, according to the method for manufacturing an oxide superconducting laminated substrate of the present invention, by adopting the above configuration, the oxide superconducting laminated substrate of the present invention can be suitably obtained. Further, according to the method for manufacturing a superconducting integrated circuit of the present invention, after forming a dielectric thin film and an oxide superconducting thin film on the oxide superconducting laminated substrate manufactured by the method for manufacturing an oxide superconducting laminated substrate of the present invention, By patterning the oxide superconductor thin film into a wiring shape to form an oxide superconductor wiring, even if heat treatment is performed when forming an insulating film or a conductive film,
Cracks generated in the oxide superconducting crystal substrate can be significantly reduced, and the yield in an electronic device process can be significantly improved. Further, according to the method of manufacturing a superconducting integrated circuit of the present invention, the first and second oxidations are performed by forming an oxide superconductor wiring made of an oxide superconducting single crystal or an oxide superconducting polycrystal on a dielectric substrate. After forming an insulating film and an oxide superconducting thin film on at least one of the material superconducting laminated substrates, the oxide superconducting thin film is patterned into a wiring shape to form an oxide superconducting circuit. The heat treatment is performed by bringing the oxide superconductor wirings of the first and second oxide superconducting laminated substrates into contact with each other directly or via the oxide superconducting thin film, and performing the heat treatment on the first and second oxide superconducting laminated substrates. By fixing the body wirings, the wirings of the first and second oxide superconducting laminated substrates can be easily connected.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a first embodiment of an oxide superconducting laminated substrate according to the present invention.

FIG. 2 is a diagram showing a schematic configuration of a heating furnace suitably used for carrying out the method for manufacturing an oxide superconducting multilayer substrate of the present invention.

FIG. 3 is a diagram showing an example of a heat pattern when performing a heat treatment in the method for manufacturing an oxide superconducting laminated substrate according to the embodiment of the present invention.

FIG. 4 is a diagram illustrating a method for manufacturing the oxide superconducting multilayer substrate according to the first embodiment of the present invention.

FIG. 5 is a cross-sectional view illustrating a second embodiment of the oxide superconducting multilayer substrate of the present invention.

FIG. 6 is a diagram showing a superconductor integrated circuit manufactured by an embodiment of the method for manufacturing a superconducting integrated circuit of the present invention;
(A) is a side view, (B) is a top view.

7A and 7B are diagrams illustrating a superconductor integrated circuit manufactured by another embodiment of the method for manufacturing a superconducting integrated circuit according to the present invention, wherein FIG. 7A is a side view and FIG. 7B is a bottom view.

FIG. 8 is a view showing another embodiment of the method of manufacturing a superconducting integrated circuit according to the present invention in the order of steps.

FIG. 9 is a diagram showing the temperature dependence of the resistance between the connection surfaces of the superconductor integrated circuit of the example.

[Explanation of symbols]

1, 31, 61, 62 ... oxide superconducting laminated substrate, 3,
3a, 33 ... oxide superconducting crystal substrate, 5, 35 ... crystal substrate for reinforcement, 20 ... heating furnace, 21 ... processing vessel, 22 ...
-Heater, 23 ... thermocouple, 25 ... laminated body, 34, 64
a ... oxide superconductor thin film, 35a ... fitting hole, 30 ...
Weight, 50, 60: superconductor integrated circuit, 52: copper cavity, 53: dielectric thin film, 54, 64: oxide superconductor wiring, 56: central conductor, 65 ... .Dielectric substrate, 6
6 ... insulating film, 67 ... oxide superconductor circuit, 68 ... superconducting ground plane, 76 ... central conductor.

Continued on the front page (71) Applicant 000002130 Sumitomo Electric Industries, Ltd. 4-33, Kitahama, Chuo-ku, Osaka-shi, Osaka (72) Inventor Teruo Izumi 1-1-3, Shinonome, Koto-ku, Tokyo Foundation International Superconductivity Technology Research Center, Superconductivity Engineering Laboratory (72) Inventor Satoshi Koyama 1-14-3, Shinonome, Koto-ku, Tokyo Foundation International Superconductivity Technology Research Center, Superconductivity Research Laboratory (72) Inventor Shiobara No. 1-14-3 Shinonome, Koto-ku, Tokyo Foundation International Research Institute for Superconducting Technology, Superconductivity Engineering Laboratory (72) Inventor Shoji Tanaka 1-14-3, Shinonome, Shintomo, Koto-ku, Tokyo Inside the Superconductivity Engineering Research Center, Industrial Technology Research Center (72) Inventor Yoichi Enomoto 1-14-3 Shinonome, Koto-ku, Tokyo Foundation International Superconductivity Technology Research Center Inside the Superconductivity Engineering Research Laboratory (72) Inventor Masahiro Egami 1 Shinonome, Koto-ku, Tokyo No. 14-3 Inside the Superconductivity Engineering Research Center, International Superconducting Technology Research Center, Japan (72) Hideo Suzuki, Inventor 1-14-3 Shinonome, Koto-ku, Tokyo Inside the research institute (72) Inventor Michiasa Iiyama 1-14-3 Shinonome, Koto-ku, Tokyo F-term in the Superconductivity Engineering Research Center, International Superconducting Technology Research Center (reference) 4M113 AD36 AD37 AD39 AD51 BA21 BA29 CA34 4M114 AA29 CC09 5G307 GA08 GC02

Claims (13)

[Claims] An oxide superconducting laminated substrate characterized in that an oxide superconducting crystal substrate made of an oxide superconducting single crystal or an oxide superconducting polycrystal and a reinforcing crystal substrate are thermocompression-bonded. 2. An oxide superconducting crystal substrate comprising an oxide superconducting single crystal or an oxide superconducting polycrystal, and a reinforcing crystal substrate having a surface formed with an oxide superconducting thin film,
An oxide superconducting laminated substrate, wherein the oxide superconducting thin film and the oxide superconducting crystal substrate are thermocompression-bonded. 3. An oxide superconducting crystal substrate made of an oxide superconducting single crystal or an oxide superconducting polycrystal produced by a pulling method and a reinforcing crystal substrate are brought into contact with each other and subjected to a heat treatment. A method for manufacturing an oxide superconducting laminated substrate, wherein a contact interface with the reinforcing crystal substrate is fixed. 4. An oxide superconducting crystal substrate made of an oxide superconducting single crystal or an oxide superconducting polycrystal produced by a pulling method, wherein both surfaces of the oxide superconducting crystal substrate are sandwiched between reinforcing crystal substrates, and a heat treatment is performed. Wherein the reinforcing crystal substrate is fixed to both surfaces of the substrate, and the oxide superconducting crystal substrate is cut in parallel with the surface direction. 5. An oxide superconducting crystal substrate made of an oxide superconducting single crystal or an oxide superconducting polycrystal produced by a pulling method and an oxide superconductor of a reinforcing crystal substrate having an oxide superconducting thin film formed on the surface. A method for producing an oxide superconducting laminated substrate, comprising: contacting a thin film with a thin film and performing a heat treatment to fix a contact interface between the oxide superconducting crystal substrate and the oxide superconducting thin film. 6. The method for manufacturing an oxide superconducting multilayer substrate according to claim 3, wherein the heat treatment is performed under a load. 7. The load applied during the heat treatment is 5
Method of manufacturing an oxide superconducting multilayer substrate according to claim 6, characterized in that to a 1000 g / cm ^2. 8. The surface roughness of at least one of contact surfaces between the oxide superconducting crystal substrate and the reinforcing crystal substrate is set to 0.01 to 50 μm. The method for producing an oxide superconducting multilayer substrate according to any one of the above. The heat treatment temperature of 9. When performing the heat treatment, the melting point of the oxide superconducting crystals constituting the substrate oxide superconducting single crystal or an oxide superconductor polycrystalline (M _p) from the lower, M _p
The method for manufacturing an oxide superconducting multilayer substrate according to any one of claims 3 to 8, wherein the temperature is higher than -100 (K). 10. The rate of temperature rise and fall when the heat treatment is performed,
The method for producing an oxide superconducting laminated substrate according to any one of claims 3 to 9, wherein the temperature is in the range of 10 to 500 K / hour. 11. The method according to claim 3, wherein the heat treatment time is in the range of 1 to 300 hours. 12. After forming a dielectric thin film and an oxide superconductor thin film on an oxide superconducting multilayer substrate manufactured by the method for manufacturing an oxide superconducting multilayer substrate according to claim 3, A method of manufacturing a superconducting integrated circuit, comprising forming an oxide superconductor wiring by patterning an oxide superconductor thin film into a wiring shape. 13. An insulated at least one of a first and a second oxide superconducting laminated substrate in which an oxide superconducting wiring made of an oxide superconducting single crystal or an oxide superconducting polycrystal is formed on a dielectric substrate. After forming the film and the oxide superconductor thin film, the oxide superconductor thin film is patterned into a wiring shape to form an oxide superconductor circuit, and then the first and second oxide superconductor laminate substrates Heat-treating the oxide superconductor wirings directly or through an oxide superconductor thin film, and fixing the oxide superconductor wirings of the first and second oxide superconducting laminate substrates. Of manufacturing a superconducting integrated circuit.