JP2001044410A - Solid-state image pickup device and drive method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid-state image pickup device, capable of immediately segmenting a detecting only the signal charge of a required region and in an image-pickup region, and drive method thereof. SOLUTION: In a solid-state image pickup device comprising light-receiving aprts arranged in a matrix in an image-pickup region 1, a transfer means consisting a vertical transfer part and a transfer means which consists of a horizontal transfer part are provided in each light-receiving part. A final horizontal transfer part 3 successively connected to a final transfer electrode constituting the vertical transfer part and a final vertical transfer part 4, successively connected to a final transfer electrode constituting the horizontal transfer part, are provided outside the image-pickup region 1. A charge discharge parts 5 and 6 for selectively sweeping out the signal charge are provided adjacent to each other, in the final horizontal transfer part 3 and the final vertical transfer region 4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device and a method of driving the same, and more particularly, to a solid-state imaging device and a method of driving the same which can quickly extract only signal charges in a necessary area in an imaging region.

[0002]

2. Description of the Related Art FIG. 9 is an enlarged view of a main part of a solid-state imaging device. The solid-state imaging device shown in FIG.
And a horizontal drive area 300. Imaging area 10
0, the light receiving units 101 are arranged in a matrix form, and the first layer of the first layer constituting the vertical transfer unit for each light receiving unit 101 is provided.
The transfer electrode 102 and the second transfer electrode 103 of the second layer are arranged. The first transfer electrode 102 and the second transfer electrode 103 are connected to the light receiving sections 10 arranged in a matrix.
1 are arranged alternately with an overlap at the vertical ends thereof, and are arranged horizontally with the light receiving portion 101 interposed therebetween.
The transfer electrodes 102 and the second transfer electrodes 103 are connected to each other. Also, the second transfer electrode 103
Serves also as a gate electrode of a read gate for reading signal charges accumulated in a lower layer of the light receiving unit 101 to the first diffusion layer 105 arranged on one side of the light receiving unit 101. Below the first transfer electrode 102 and the second transfer electrode 103 thus configured, an N-type first diffusion layer 105 is extended.

[0006] A horizontal drive area 300 is provided so as to be continuous with the first transfer electrode 102 or the second transfer electrode 103 which is the last stage of the vertical transfer section. In the horizontal drive region 300, a third transfer electrode 301 of the first layer and a fourth transfer electrode 302 of the second layer are arranged, and an N-type second diffusion layer 303 is provided below some of the transfer electrodes. Is provided. These third transfer electrode 301 and fourth transfer electrode 30
Reference numerals 2 are alternately arranged with an overlap at the horizontal end, and a charge detection unit (not shown) is connected to the electrode constituting the last stage.

In order to drive the solid-state imaging device having such a configuration, first, a readout pulse is applied to the second transfer electrode 103 so that the signal charges accumulated in the light receiving unit 101 are transferred to the second transfer electrode 103 under the second transfer electrode 103. The readout signal charges are sequentially transferred to the horizontal drive region 300 by reading out to the one diffusion layer 105 and applying four-phase drive pulses (V1 to V4) to the first transfer electrode 102 and the second transfer electrode 103. . In the horizontal drive region 300, the adjacent third transfer electrode 301 and fourth transfer electrode 302 are set as one set, and two-phase drive pulses (H1, H2) are applied to each set, so that the horizontal drive region The signal charge transferred to 300 is transferred to the charge detection unit.

[0005]

However, in the solid-state imaging device having such a configuration, since only the vertical transfer section is arranged in the imaging area 100, there are the following problems. That is, for example, when it is desired to cut out only the image of the central portion by cutting off both ends in the horizontal direction of the imaging area 100, the light receiving section It is necessary to horizontally transfer and transfer the signal charges read from 101 to the charge detection unit from the horizontal drive region 300, and perform a process of thinning out the signal charges in the charge detection unit. For this reason, all the signal charges including the signal charges read from the light receiving unit 101 in the unnecessary region must be temporarily transferred to the charge detection unit once, which requires a processing time.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a solid-state imaging device capable of quickly cutting out and detecting only signal charges in a necessary region in an imaging region and a driving method thereof.

[0007]

According to a first aspect of the present invention, there is provided a solid-state imaging device including a light-receiving unit arranged in a matrix in an imaging region.
For each light receiving unit, each transfer stage constituting a vertical transfer unit,
Each transfer stage constituting a horizontal transfer unit is provided. Further, outside the imaging region, a final horizontal transfer section that is continuous with the final transfer electrode that forms the vertical transfer section, and a final vertical transfer section that is continuous with the last transfer electrode that forms the horizontal transfer section are provided. Further, the final horizontal transfer unit and the final vertical transfer unit are provided adjacent to a charge discharging unit for selectively sweeping out signal charges.

Further, according to the driving method of the solid-state imaging device of the present invention, the light receiving sections are arranged in a matrix in the imaging area, and each transfer stage and the vertical transfer section constituting the horizontal transfer section for each of the light receiving sections. Wherein the driving of the horizontal transfer section and the driving of the vertical transfer section are performed independently. Then, of the signal charges transferred to the final horizontal transfer section by driving the vertical transfer section, the signal charges transferred from an unnecessary area in the imaging area are transferred to the charge discharging section provided adjacent to the final horizontal transfer section. Selectively sweep away from. On the other hand, of the signal charges transferred to the final vertical transfer unit by driving the horizontal transfer unit, the signal charges transferred from an unnecessary area in the imaging region are transferred from a charge discharging unit provided adjacent to the final horizontal transfer unit. Selectively sweep away.

In the solid-state imaging device having such a configuration and the method of driving the same, the signal charges accumulated in each of the light receiving units are driven vertically by driving either the vertical transfer unit or the horizontal transfer unit in the imaging region. Transferred in the horizontal or horizontal direction. For this reason, the processing of the signal charges stored in the respective light receiving units arranged in a matrix is performed in any one of the horizontal column order and the vertical column order. Unnecessary signal charges among the signal charges transferred from the vertical transfer unit to the final horizontal transfer unit in the horizontal column order are not transferred to the charge detection unit, but are discharged to the charge discharge unit adjacent to the final horizontal transfer unit. Is selectively swept out of every horizontal row. On the other hand, unnecessary signal charges among the signal charges transferred from the horizontal transfer section to the final vertical transfer section in the vertical column order are not transferred to the charge detection section, and the unloading sections adjacent to the final vertical transfer section are not transferred. From each vertical column. Therefore, it is not necessary to transfer all of the signal charges transferred from the imaging region to the charge transfer unit, and the signal charges in the partial region in the vertical column direction and the partial region in the horizontal column direction in the imaging region are quickly cut out. .

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a solid-state imaging device and a driving method thereof according to the present invention will be described below with reference to the drawings.
FIG. 1 is a configuration diagram of a solid-state imaging device according to an embodiment of the present invention, and FIG. 2 is an enlarged view of a main part of FIG.

The solid-state imaging device shown in these figures has an imaging area 1, an optical black 2 provided to surround the imaging area 1, a final horizontal transfer unit 3 and a final vertical transfer unit provided outside the optical black 2. 4, charge discharging units 5 and 6 provided adjacent to the final horizontal transfer unit 3 and the final vertical transfer unit 4, respectively, and the charge detection unit 7 connected to the final horizontal transfer unit 3 and the final vertical transfer unit 4. A timing generator 8 for generating various timing signals for driving the charge transfer units and the charge discharging units 5 and 6, and a mode switching unit 9 for selecting a drive mode by the timing generator 8.

In the imaging area 1, a plurality of light receiving sections 11 are arranged in a matrix, and a first transfer electrode 12, a second transfer electrode 13, and a third transfer electrode 14 are provided for each of the light receiving sections 11. ing. Here, the first transfer electrode 12 and the second transfer electrode 13 constitute a vertical transfer unit, and the second transfer electrode 13
And the third transfer electrode 14 constitute a horizontal transfer unit.

Although not shown here, the light receiving section 11 includes an upper layer of a first conductivity type (for example, a P type in this case) and a lower layer of a second conductivity layer (for example, an N type in this case). It consists of a configured photodiode.

First transfer electrode 12 constituting vertical transfer section
Is formed, for example, of a first layer of polysilicon (hereinafter, referred to as 1 ps), and the second transfer electrode 13 is formed of, for example, a second layer of polysilicon (hereinafter, referred to as 2 ps). The first transfer electrodes 12 and the second transfer electrodes 13 are alternately arranged on the side in the horizontal direction of the light receiving units 11 arranged in a matrix with the ends in the vertical direction overlapping.
Then, the first array arranged in the horizontal direction with the light receiving unit 11 interposed therebetween
The transfer electrodes 12 and the second transfer electrodes 13 are connected to each other.

Below the first transfer electrode 12 and the second transfer electrode 13, an N-type first diffusion layer 15 extends in the vertical direction. The first transfer electrode 12, the second transfer electrode 13, and the first diffusion layer 15 constitute a vertical transfer section. Beside each light receiving section 11, each transfer stage constituting the vertical transfer section is provided horizontally. Each will be arranged. Here, the second transfer electrode 13 also serves as a gate electrode for reading out signal charges accumulated in the light receiving unit 11 to the first diffusion layer 15.

On the other hand, the second transfer electrode 13 constituting the horizontal transfer section also serves as the second transfer electrode 13 constituting the vertical transfer section. The third transfer electrode 14 constituting the horizontal transfer portion is formed of, for example, a third-layer polysilicon (hereinafter, 3p).
s), and is disposed on the side of the light receiving unit 11 in the vertical direction. The second transfer electrodes 13 and the third transfer electrodes 14 are alternately arranged with their horizontal ends overlapping. Then, the third transfer electrodes 14 arranged in the horizontal direction with the second transfer electrode 13 interposed therebetween are in a state of being connected to each other.

An N-type second diffusion layer 16 is provided below the third transfer electrode 14 on the side of the final vertical transfer section 4. The second diffusion layer 16 is disposed between the first diffusion layer 15 and the first diffusion layer 15 via a P-type region below the second transfer electrode 13 (for example, a P-well region not shown here). Further, the remaining portion below the third transfer electrode 14 is a P-well region (not shown). That is, below the second transfer electrode 13, the N-type first
A diffusion layer 15 and a P-well region are arranged in this order, and an N-type second diffusion layer 16 and a P-well region are arranged below the third transfer electrode 14 from the final vertical transfer unit 4 side to form a horizontal transfer unit. Each transfer stage constituting the horizontal transfer unit is arranged on the side of each light receiving unit 11 in the vertical direction.

A light receiving section 11 and a first light receiving section 11 disposed on one side (left side in the drawing) of the light receiving section 11 in the horizontal direction.
A P-type channel stop layer is provided between the diffusion layer 15 and the light-receiving section 11 and the third transfer electrode 14 disposed on one side (lower side in the drawing) of the light-receiving section 11 in the vertical direction. 17 are provided. However, the channel stop layer 17 is not provided between the light receiving section 11 and the second transfer electrode 13 serving as a gate electrode.

The final first part of the vertical transfer unit
The final horizontal transfer unit 3 is provided in a state where the final horizontal transfer unit 3 is connected to the transfer electrode 12 or the second transfer electrode 13. The final horizontal transfer section 3 is provided with a fourth transfer electrode 31 made of, for example, 1 ps.
And a second transfer electrode 32 of 2 ps provided on the fourth transfer electrode 31 with both edges overlapped.
These fourth transfer electrodes 31 and fifth transfer electrodes 32 are alternately arranged along the horizontal direction of the light receiving units 11 arranged in a matrix. An N-type fourth diffusion layer 33 is provided below the fourth transfer electrode 31.
Below P, a P-type fifth diffusion layer (for example, a P-well region not shown) is provided.

A final vertical transfer section 4 is provided in a state where the final vertical transfer section 4 is connected to the last second transfer electrode 13 or third transfer electrode 14 constituting the horizontal transfer section. The final vertical transfer section 4 is, for example, a sixth transfer electrode 41 of 1 ps.
And a 7 ps transfer electrode 42 of 2 ps provided on the sixth transfer electrode 41 with both edges overlapped.
The sixth transfer electrodes 41 and the seventh transfer electrodes 42 are alternately arranged along the vertical direction of the light receiving units 11 arranged in a matrix. An N-type sixth diffusion layer 43 is provided below the sixth transfer electrode 41 and the seventh transfer electrode 42 in the vertical direction.

The final horizontal transfer unit 3 configured as described above
In addition, adjacent to the final vertical transfer section 4, charge discharging sections 5 and 6 are provided, respectively. These charge discharging units 5, 6
Are overflow gates 51 and 61 provided adjacent to the final horizontal transfer unit 3 and the final vertical transfer unit 4 in the transfer direction, and the overflow gates 5 and
The overflow drains 52 and 62 are provided through the transfer directions of the final horizontal transfer unit 3 and the final vertical transfer unit 4 through the transfer drains 1 and 61.

The charge detecting section 7 connected to the final horizontal transfer section 3 and the final vertical transfer section 4 outputs
And the final vertical transfer unit 4. The charge detection unit 7 includes a final horizontal transfer unit 3 and a final vertical transfer unit 4
A floating diffusion 71 adjacent via each output gate (not shown), a reset gate 72 adjacent to the floating diffusion 71,
It comprises a reset drain 73 adjacent to the reset gate 72.

Then, as shown in the timing chart of FIG. 3, the timing generator 8 applies four phases to the first transfer electrode 12 and the second transfer electrode 13 constituting the vertical transfer section in the imaging region 1 at a predetermined timing. Drive pulses V1 to V
4 and the sixth transfer electrode 41 and the seventh transfer electrode 41 of the final vertical transfer section 4.
Four-phase drive pulses V11 to V14 are applied to the transfer electrode 42 at a predetermined timing. At this time, the driving pulses V1 to V
4, V11 to V14 are middle (M) levels (for example, 0
V) and a low (L) level (for example, -8.5 V).

By applying four-phase drive pulses V1 to V4 to the vertical transfer section in the image pickup area 1, the first diffusion layer 15
Are transferred toward the final horizontal transfer unit 3. By applying the four-phase drive pulses V11 to V14 to the final vertical transfer unit 4, the signal charges transferred to the final vertical transfer unit 4 are transferred to the charge detection unit 7.

Further, the timing generator 8 is configured as shown in FIG.
As shown in the timing chart of FIG. 2, the second transfer electrode 13 and the third transfer electrode 1 forming the horizontal transfer portion in the imaging region 1
4, two-phase driving pulses H1 and H at predetermined timing.
Give 2. However, the drive pulse H2 applied to the second transfer electrode 13 composed of 2 ps is at the M level (for example, 0 V).
And the third transfer electrode 14 composed of 3 ps.
Is supplied with a drive pulse H1 having a potential difference between a high (H) level (for example, +5 V) and an L level (for example, -8.5 V).

By applying such driving pulses H1 and H2 to the horizontal transfer section in the imaging region 1, the signal charges read out to the first diffusion layer 15 are
From the second diffusion layer 16 provided below the third transfer electrode 14 to the final vertical transfer section 4, to the first diffusion layer 15. At this time, the N-type first diffusion layer 15 and the second diffusion layer 1
The backflow of the signal charges is prevented by the P-well region provided between the first and second P-wells.

Further, although not shown in the timing chart, the timing generator 8 supplies a fourth transfer electrode 31 and its charge detection section 7 to the final horizontal transfer section 3.
The fifth transfer electrode 32 disposed on the side is set as one set, and two-phase drive pulses H11 and H12 are applied to each set.
Thus, the signal charges transferred to the final horizontal transfer unit 3 are transferred to the charge detection unit 7.

In addition to the above, the timing generator 8
Are the overflow gates 51,
Gate voltages G1 and G2 are applied to 61, a read pulse VT (for example, 15 V) is applied to the second transfer electrode 12 also serving as a read gate electrode in the imaging region 1, and a gate voltage is applied to the reset gate 72 of the charge detection unit 7.

The mode switching unit 9 is provided, for example, as shown in FIG.
As shown in the figure, an effective area 1a for detecting signal charges in the imaging area 1 and other swept-out areas 1b and 1b '.
And the timing generator 8 is controlled such that only the signal charges accumulated in the light receiving unit 11 in the effective area 1a are output.

For example, as shown in FIG.
In the case where the effective area 1a is designated by the mode switching unit 8 so that the both ends in the vertical direction are swept away areas 1b and 1b 'and only the central part is the effective area 1a, the timing generator 8 uses the timing chart of FIG. The solid-state imaging device is driven as shown in FIG.

First, in the first stage, a readout pulse VT (= 15 V) is applied to the second transfer electrodes 13, and the signal charges accumulated in all the light receiving sections 11 in the imaging area 1 are transferred to each second transfer electrode 1.
3 to the first diffusion layer 15 below. After that, the drive pulses V1 to V are sequentially applied to the first transfer electrode 13 and the second transfer electrode 14.
4, the read signal charges are sequentially transferred to the final horizontal transfer unit 3.

Then, the signal charges sequentially and vertically transferred to the final horizontal transfer section 3 for each horizontal column are processed as follows.

First, in the first stage, the signal charges in the swept-out area 1b vertically transferred to the final horizontal transfer section 3 (the area closer to the final horizontal transfer section 3) are swept away. At this time, in the final horizontal transfer section 3, the application of the drive pulses H11 and H12 to the fourth transfer electrode 31 and the fifth transfer electrode 32 is stopped while the signal charges in the swept-out area 1b are vertically transferred. Keep it. On the other hand, during this time, the gate voltage G1 is applied to the gate electrode 51 of the charge discharging section 5, whereby the swept area 1 vertically transferred to the final horizontal transfer section 3 is applied.
The signal charge of “b” is swept to the overflow drain 52.

In the second stage, the swept-out area 1b
Are transferred vertically to the final horizontal transfer section 3, and then the signal charges in the effective area 1 a are transferred to the final horizontal transfer section 3.
Before the vertical transfer to the device, the signal charges of the final horizontal transfer unit 3 are completely swept away. Here, overflow gate 5
In the state where the application of the gate voltage G1 to the first horizontal transfer unit 3 is stopped and the floating diffusion 71 of the charge detection unit 7 is reset, the fourth transfer electrode 31 and the fifth transfer electrode 31
Drive pulses H11 and H12 are applied to the transfer electrode 32, and the signal charges remaining in the final horizontal transfer unit 3 are transferred to the charge detection unit 7 and swept away from the reset drain 73.

Thereafter, in the third stage, the final horizontal transfer unit 3
The signal charges in the effective region 1a which have been vertically transferred to the charge detection section 7 are horizontally transferred. Here, the final horizontal transfer unit 3
By applying drive pulses H11 and H12 to the fourth transfer electrode 31 and the fifth transfer electrode 32, the signal charges are sequentially transferred horizontally to the charge detection unit 7, and the horizontally transferred signal charges are sequentially detected for each pixel. .

Next, in the fourth stage, the signal charges in the sweep-out area 1b 'vertically transferred to the final horizontal transfer section 3 are swept away. Here, in the first stage, the swept area 1b
In the same manner as when the signal charges of
While the signal charge of b ′ is being transferred, the drive pulses H11 and H11 to the fourth transfer electrode 31 and the fifth transfer electrode 32 are
12 is stopped, a voltage is applied to the overflow gate 51 of the charge discharging unit 5, whereby the signal charges in the swept-out area 1 b ′ are removed.
Sweep to 2

As described above, the vertical end of the imaging region 1 can be thinned out and only the effective region 1a at the center in the vertical direction can be quickly cut out. After the fourth stage is completed, the signal charges of the final horizontal transfer unit 3 are completely swept out as necessary in the same manner as in the second stage.

When the above-described driving method is performed, the driving pulses H1 and H2 are applied to the second transfer electrode 13 and the third transfer electrode 14 in the imaging region 1 and the driving pulse is applied to the final vertical transfer unit 4. It is assumed that the application of V11 to V14 is stopped.

Next, as shown in FIG. 7, the mode switching section 9 sets the effective area 1a such that both horizontal edges of the image pickup area 1 are swept away areas 1c and 1c 'and only the central portion is the effective area 1a. A method of driving the solid-state imaging device when 1a is designated will be described with reference to the timing chart of FIG.

First, the second transfer electrode 1 composed of 2 ps
3, a read pulse VT (= 15 V) is applied, and the signal charges accumulated in all the light receiving units 11 in the imaging region 1 are read out to the first diffusion layer 15 below each second transfer electrode 13. Next, as described with reference to FIG. 4, while the drive pulse H2 applied to the second transfer electrode 13 is fixed at a constant potential, the drive pulse H1 is applied to the third transfer electrode 14 to read out the signal charges. Are sequentially and horizontally transferred to the final vertical transfer unit 4.

The signal charges sequentially and horizontally transferred to the final vertical transfer unit 4 for each vertical column are processed as follows.

First, in the first stage, the signal charges in the sweep-out area 1c (the area closer to the final vertical transfer section 4) horizontally transferred to the final vertical transfer section 4 are swept away. At this time, in the final vertical transfer unit 4, the application of the drive pulses V 11 to V 14 to the sixth transfer electrode 41 and the seventh transfer electrode 42 is stopped while the signal charges in the swept-out area 1 c are being horizontally transferred. Keep it. On the other hand, during this time, the gate voltage G2 is applied to the overflow gate 61 of the charge discharging unit 6, whereby the signal charges of the swept-out area 1c horizontally transferred to the final vertical transfer unit 4 are transferred to the overflow drain 62.
Swept away.

In the second stage, the swept-out area 1c
Are horizontally transferred to the final vertical transfer section 4 after the horizontal transfer of the signal charges in the effective area 1a.
, The signal charges of the final vertical transfer section 4 are completely swept away. Here, the application of the gate voltage G2 to the overflow gate 61 is stopped, and the floating diffusion 71 of the charge detecting unit 7 is reset, and the sixth transfer electrode 41 and the seventh transfer electrode 42 of the final vertical transfer unit 4 are reset. The drive pulses V11 to V14 are applied to transfer the signal charges remaining in the final vertical transfer section 4 to the charge detection section 7 and to sweep them away from the reset drain 73.

Thereafter, in the third stage, the final vertical transfer section 4
The signal charges of the effective region 1a transferred to the charge detection section 6 are transferred to the charge detection section 6. Here, the drive pulses V11 to V11 are applied to the sixth transfer electrode 41 and the seventh transfer electrode 42 of the final vertical transfer unit 4.
By applying V14, the signal charges are sequentially vertically transferred to the charge detection unit 7, and the transferred signal charges are sequentially detected for each pixel.

Next, in the fourth stage, the signal charges in the sweep-out area 1c 'transferred to the final vertical transfer section 4 are swept away. Here, similarly to the case where the signal charges in the swept-out area 1c are swept away in the first stage, the swept-out area 1c ′ is used.
While the signal charges of the sixth transfer electrode 41 are being transferred,
In a state in which the application of the drive pulses V11 to V14 to the seventh transfer electrode 42 is stopped, a voltage is applied to the overflow gate 61 of the charge discharging unit 6, whereby the signal charges in the swept-out area 1c 'are transferred to the overflow drain 62. Swept away.

As described above, it is possible to thin out the horizontal end of the image pickup area 1 and quickly cut out only the effective area 1a at the center in the horizontal direction. After the end of the fourth stage, the signal charges of the final vertical transfer unit 4 are completely swept away as necessary in the same manner as in the second stage.

When the above-described driving method is performed, the driving pulses V1 to V4 are applied to the first transfer electrode 12 and the second transfer electrode 13 in the imaging region 1 and the driving pulse is applied to the final horizontal transfer unit 3. It is assumed that the application of H11 and H12 is stopped.

In this embodiment, the final vertical transfer section 4 is driven by four-phase drive pulses V11 to V14.
The case of phase driving has been described. However, the final vertical transfer unit 4 may be driven in two phases by a two-phase drive pulse, thereby enabling high-speed transfer. However, when the final vertical transfer unit 4 is driven by two phases, the final vertical transfer unit 4 has the same configuration as that of the final horizontal transfer unit 3, and the two-phase drive is performed in the same manner as when the final horizontal transfer unit 3 is driven. A pulse is given.

[0049]

As described above, according to the present invention, the vertical transfer is provided by providing each transfer stage constituting the vertical transfer unit and each transfer stage constituting the horizontal transfer unit for each light receiving unit. The signal charge is transferred to one of a final horizontal transfer unit connected to the horizontal transfer unit and a final vertical transfer unit connected to the horizontal transfer unit. It is possible to selectively sweep out signal charges every time. Therefore, when a partial area in the vertical column direction or a partial area in the horizontal column direction in the imaging area is cut out and detected as an effective area, it is not necessary to transfer all of the signal charges to the charge detection unit, and the effective area can be quickly established. It becomes possible to cut out only signal charges.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a solid-state imaging device according to an embodiment of the present invention.

FIG. 2 is an enlarged view of a main part of FIG.

FIG. 3 is a timing chart for explaining driving of a vertical transfer unit and a final vertical transfer unit.

FIG. 4 is a timing chart illustrating driving of a horizontal transfer unit.

FIG. 5 is a diagram illustrating an example of an effective area cut out in an imaging area.

FIG. 6 is a timing chart illustrating a method of driving the solid-state imaging device for cutting out the effective area shown in FIG.

FIG. 7 is a diagram illustrating another example of an effective area cut out in an imaging area.

8 is a timing chart illustrating a method for driving the solid-state imaging device for cutting out the effective area shown in FIG.

FIG. 9 is a configuration diagram of a main part of a conventional solid-state imaging device.

[Description of Signs] 1 ... imaging area, 3 ... final horizontal transfer section, 4 ... final vertical transfer section, 5, 6 ... charge discharging section, 7 ... charge detecting section, 11 ... light receiving section, 12 ... first transfer electrode, 13 ... second transfer electrode, 14 ...
Third transfer electrode

Claims (8)

[Claims] 1. A solid-state imaging device in which light receiving units are arranged in a matrix in an imaging area, wherein each transfer stage constituting a vertical transfer unit is provided for each of the light receiving units.
A solid-state imaging device, comprising: a transfer unit that forms a horizontal transfer unit. 2. The solid-state imaging device according to claim 1, wherein a final horizontal transfer unit that is continuous with a final transfer electrode that forms the vertical transfer unit and a final horizontal transfer unit that forms the horizontal transfer unit, are provided outside the imaging region. And a final vertical transfer section continuous with the transfer electrode of (1). 3. The solid-state imaging device according to claim 2, wherein the final horizontal transfer unit and the final vertical transfer unit are provided adjacent to each other with a charge discharging unit for selectively sweeping out signal charges. Characteristic solid-state imaging device. 4. The solid-state imaging device according to claim 3, wherein a common charge detection unit is connected to the final horizontal transfer unit and the final vertical transfer unit. 5. The solid-state imaging device according to claim 1, wherein the transfer electrodes forming the vertical transfer unit and the horizontal transfer unit are configured by three or more electrode forming layers. apparatus. 6. The solid-state imaging device according to claim 5, wherein the vertical transfer unit is disposed beside the light receiving unit via a first transfer electrode and a readout gate unit, and is partially provided in the first transfer electrode. And a second transfer electrode disposed on the second transfer electrode, and the horizontal transfer section includes the second transfer electrode and a third transfer electrode partially disposed on the second transfer electrode. A solid-state imaging device characterized by the above-mentioned. 7. A light-receiving section is arranged in a matrix in an imaging area, and each transfer section forming a vertical transfer section and each transfer section forming a horizontal transfer section are provided for each light-receiving section. A method for driving a solid-state imaging device, wherein the driving of the horizontal transfer unit and the driving of the vertical transfer unit are performed independently. 8. The solid-state imaging device, further comprising: a final horizontal transfer unit that is continuous with a final transfer electrode constituting the vertical transfer unit;
A final vertical transfer unit that is continuous with a final transfer electrode that constitutes the horizontal transfer unit, and a charge discharging unit that is provided adjacent to the final horizontal transfer unit and the final vertical transfer unit. Of the signal charges transferred to the final horizontal transfer section by driving, the signal charges transferred from an unnecessary area in the imaging region are selectively transferred from the charge discharge section provided adjacent to the final horizontal transfer section. Of the signal charges transferred to the final vertical transfer unit by driving the horizontal transfer unit, the signal charges transferred from an unnecessary area in the imaging region are provided adjacent to the final horizontal transfer unit. 8. The method according to claim 7, wherein the charge discharging unit is selectively swept away.