JP2001036123A - Solar cell module - Google Patents
Solar cell moduleInfo
- Publication number
- JP2001036123A JP2001036123A JP11207928A JP20792899A JP2001036123A JP 2001036123 A JP2001036123 A JP 2001036123A JP 11207928 A JP11207928 A JP 11207928A JP 20792899 A JP20792899 A JP 20792899A JP 2001036123 A JP2001036123 A JP 2001036123A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- power generation
- base material
- cell module
- reflectance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 50
- 238000010248 power generation Methods 0.000 claims description 49
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 14
- 230000031700 light absorption Effects 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000001782 photodegradation Methods 0.000 abstract description 4
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 39
- 238000006243 chemical reaction Methods 0.000 description 18
- 230000006866 deterioration Effects 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 7
- 238000006731 degradation reaction Methods 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920006327 polystyrene foam Polymers 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、非晶質半導体から
なる太陽電池素子を有する太陽電池モジュールに関し、
特に光劣化の少ない太陽電池モジュールを提供するため
の技術に関する。TECHNICAL FIELD The present invention relates to a solar cell module having a solar cell element made of an amorphous semiconductor.
In particular, the present invention relates to a technique for providing a solar cell module with less light deterioration.
【０００２】[0002]
【従来の技術】太陽電池を用いた太陽光発電システム
は、クリーンな電源システムであることから住宅用の電
源等への普及が進んでいる。太陽光発電システムは、一
般に、複数の太陽電池素子から構成される複数枚の太陽
電池モジュールが家屋の屋根上やビルの屋上或いは壁面
等に設置され、太陽電池モジュールの直流出力がインバ
ータにより交流出力に変換されて負荷に供給される。2. Description of the Related Art A photovoltaic power generation system using a solar cell is a clean power supply system, and is widely used as a power supply for houses. In a photovoltaic power generation system, generally, a plurality of solar cell modules composed of a plurality of solar cell elements are installed on a roof of a house, a roof of a building or a wall surface, and the DC output of the solar cell module is output by an inverter to an AC output. And supplied to the load.
【０００３】太陽電池素子を構成する材料としては、単
結晶シリコン或いは多結晶シリコン等の結晶系半導体
や、非晶質シリコン或いは非晶質シリコンゲルマニウム
等の非晶質半導体、或いはＧａＡｓやＣｄＴｅ等の化合
物半導体が用いられる。このうち、非晶質半導体を用い
た太陽電池素子は基板選択及び出力設計の自由度が高
く、また製造コストが安価である、といった特徴を有し
ている。然し乍ら、非晶質半導体からなる太陽電池素子
はこれらの特徴を有する一方で、長時間の光照射により
その光電変換特性が低下する、所謂光劣化という課題も
有している。[0003] Materials constituting a solar cell element include a crystalline semiconductor such as single crystal silicon or polycrystalline silicon, an amorphous semiconductor such as amorphous silicon or amorphous silicon germanium, or a material such as GaAs or CdTe. A compound semiconductor is used. Among them, a solar cell element using an amorphous semiconductor has such features that the degree of freedom in substrate selection and output design is high, and the manufacturing cost is low. However, while a solar cell element made of an amorphous semiconductor has these characteristics, it also has a problem of so-called photodeterioration, in which the photoelectric conversion characteristics are reduced by long-time light irradiation.
【０００４】そこで、従来斯かる光劣化の課題を解決す
るために、太陽電池素子の背面側に断熱材を設ける構成
が提案されている（特開平８−３０２９２６号）。図５
に示す断面図を参照して、斯かる従来技術においては、
非晶質半導体からなる太陽電池素子を有する太陽電池パ
ネル１０１の背面に、ポリスチレンフォーム、ポリエチ
レンフォーム、硬質ポリウレタンフォーム等の断熱性、
保温性、蓄熱性に優れた断熱材１０２が設けられてい
る。また、断熱材１０２の背面にはさらに金属板１０３
が設けられている。そして、断熱材１０２により太陽電
池パネル１０１の背面側からの放熱を防止して該太陽電
池パネル１０１の温度上昇を促進することにより、光劣
化による光電変換特性の低下を抑制している。Therefore, in order to solve the problem of light degradation, a configuration has been proposed in which a heat insulating material is provided on the back side of the solar cell element (Japanese Patent Laid-Open No. 8-302926). FIG.
Referring to the cross-sectional view shown in FIG.
On the back of the solar cell panel 101 having a solar cell element made of an amorphous semiconductor, heat insulation such as polystyrene foam, polyethylene foam, and rigid polyurethane foam,
A heat insulating material 102 having excellent heat retention and heat storage properties is provided. Further, a metal plate 103 is further provided on the back of the heat insulating material 102.
Is provided. The heat insulating material 102 prevents heat radiation from the back side of the solar cell panel 101 and promotes a rise in the temperature of the solar cell panel 101, thereby suppressing a decrease in photoelectric conversion characteristics due to light deterioration.
【０００５】[0005]
【発明が解決しようとする課題】然し乍ら、上記従来の
構成においては太陽電池パネル１０１の背面に断熱材１
０２を設ける必要があるために、構成部品の点数が増加
し、製造コストの増大を招くと共に、重量が増大するた
めに設置の際の作業性が低下する、という課題がある。However, in the above-mentioned conventional structure, the heat insulating material 1 is provided on the back of the solar cell panel 101.
02, the number of components increases, which leads to an increase in manufacturing cost, and a problem that the workability at the time of installation decreases due to an increase in weight.
【０００６】そこで、本発明は斯かる従来の課題を解決
し、製造コストの増大や重量の増大を招くことなく、光
劣化による特性低下の少ない太陽電池モジュールを提供
することを目的とする。Accordingly, an object of the present invention is to solve the above-mentioned conventional problems and to provide a solar cell module in which characteristics are not deteriorated due to light deterioration without increasing manufacturing cost and weight.
【０００７】[0007]
【課題を解決するための手段】本発明太陽電池モジュー
ルは、熱伝導性を有する下地材と、該下地材の発電領域
上に載置された太陽電池部と、を有すると共に、前記下
地材は、その表面に前記太陽電池部から露出する非発電
領域を有し、且つ前記太陽電池部は、前記非発電領域か
ら熱伝達可能に載置されていることを特徴とする。A solar cell module according to the present invention includes a base material having thermal conductivity, and a solar cell portion mounted on a power generation region of the base material. And a non-power generation area exposed from the solar cell section on the surface thereof, and the solar cell section is placed so as to be able to transfer heat from the non-power generation area.
【０００８】また、前記非発電領域は、前記太陽電池部
と略同程度の光吸収特性を有することを特徴とする。Further, the non-power generation region has substantially the same light absorption characteristics as the solar cell portion.
【０００９】さらには、波長４００ｎｍ〜７５０ｎｍに
おける前記非発電領域表面の反射率と前記太陽電池部表
面の反射率との比の平均値が、０．７以上、１．３以下
の範囲であることを特徴とする。この平均値は、０．９
以上、１．１以下の範囲とすることがより好ましい。Further, the average value of the ratio of the reflectance of the surface of the non-power generation region to the reflectance of the surface of the solar cell portion at a wavelength of 400 nm to 750 nm is in a range of 0.7 or more and 1.3 or less. It is characterized by. This average is 0.9
More preferably, the range is 1.1 or less.
【００１０】加えて、前記太陽電池部が、非晶質半導体
からなる太陽電池素子を有することを特徴とする。In addition, the solar cell section has a solar cell element made of an amorphous semiconductor.
【００１１】さらには、前記太陽電池素子が、非晶質シ
リコンゲルマニウムからなる発電層を含むことを特徴と
し、前記発電層中のゲルマニウム量が、１０原子％以
上、４５原子％未満の範囲であることを特徴とする。Further, the solar cell element includes a power generation layer made of amorphous silicon germanium, and the amount of germanium in the power generation layer is in a range of 10 atomic% or more and less than 45 atomic%. It is characterized by the following.
【００１２】[0012]
【発明の実施の形態】本発明の実施の形態について以下
に説明する。Embodiments of the present invention will be described below.
【００１３】図１は本発明の実施の形態に係る太陽電池
モジュールの斜視図であり、同図（Ａ）は本発明太陽電
池モジュールに係る下地材の斜視図、同図（Ｂ）はこの
下地材上に太陽電池部を載置した状態の斜視図を夫々示
している。また、図２は図１におけるＣ−Ｃ線の断面図
である。FIG. 1 is a perspective view of a solar cell module according to an embodiment of the present invention. FIG. 1A is a perspective view of a base material of the solar cell module of the present invention, and FIG. The perspective views of the state where the solar cell unit is placed on the material are shown. FIG. 2 is a sectional view taken along line CC in FIG.
【００１４】図１（Ａ）を参照して、本発明太陽電池モ
ジュールにおいて用いる下地材１は、中央部に太陽電池
部２が載置される発電領域Ａと、この発電領域Ａを囲繞
するように枠状に設けられた非発電領域Ｂとを有してい
る。斯かる下地材１は、例えば鉄板、ステンレス鋼鈑、
メッキ鋼鈑、銅板、アルミニウム合金板等の良好な熱伝
導性を有する金属材料から構成される。そして、同図
（Ｂ）に示す如く、本発明太陽電池モジュールにあって
は上記下地材１の発電領域Ａ上に太陽電池部２が載置さ
れ、そして非発電領域Ｂは太陽電池部２から外部に露出
せしめられている。Referring to FIG. 1A, a base material 1 used in the solar cell module of the present invention has a power generation area A in which a solar cell section 2 is placed at a central portion and a power generation area A surrounding the power generation area A. And a non-power generation area B provided in a frame shape. Such a base material 1 is, for example, an iron plate, a stainless steel plate,
It is composed of a metal material having good thermal conductivity, such as a plated steel plate, a copper plate, and an aluminum alloy plate. Then, as shown in FIG. 3B, in the solar cell module of the present invention, the solar cell unit 2 is placed on the power generation region A of the base material 1, and the non-power generation region B is separated from the solar cell unit 2. It is exposed to the outside.
【００１５】太陽電池部２は、図２に示す如く、ガラ
ス、プラスチック等の透光性を有する材料からなる基板
２１と、該基板２１の裏面側に形成された太陽電池素子
２２と、該太陽電池素子２２の表面を覆って設けられた
保護層２３とから構成される。太陽電池素子２２は、例
えば基板２１側から順に、ＳｎＯ2，ＩＴＯ或いはＺｎ
Ｏ等の透光性導電材からなる第１電極３１、非晶質半導
体からなり内部にｐｉｎ接合を有する光電変換層３２、
及びＡｇ，Ａｌ等の高反射性金属からなる第２電極３３
が順次積層されて構成される。As shown in FIG. 2, the solar cell section 2 includes a substrate 21 made of a light-transmitting material such as glass or plastic, a solar cell element 22 formed on the back side of the substrate 21, And a protective layer 23 provided to cover the surface of the battery element 22. The solar cell element 22 is made of, for example, SnO 2 , ITO, or Zn in order from the substrate 21 side.
A first electrode 31 made of a light-transmitting conductive material such as O, a photoelectric conversion layer 32 made of an amorphous semiconductor and having a pin junction inside,
And a second electrode 33 made of a highly reflective metal such as Ag or Al
Are sequentially laminated.
【００１６】本実施形態にあっては、例えば太陽電池部
２が複数の太陽電池素子２２を備えており、相隣接する
太陽電池素子２２における一方の太陽電池素子２２の第
２電極３３が、他方の太陽電池素子２２の第１電極３１
にまで延在することにより互いに電気的に直列接続され
ている。尚、本発明においては、斯様に太陽電池部２が
複数の太陽電池素子２２を備えるものに限らず、単一の
太陽電池素子２２を備えたものであっても良い。In the present embodiment, for example, the solar cell section 2 includes a plurality of solar cell elements 22, and the second electrode 33 of one of the solar cell elements 22 in the adjacent solar cell element 22 is connected to the other. First electrode 31 of the solar cell element 22
And are electrically connected to each other in series. In the present invention, the solar cell unit 2 is not limited to the one including the plurality of solar cell elements 22, and may be a single solar cell element 22.
【００１７】上記光電変換層３２としては、例えば第１
電極３１側から順に、ｐ型の非晶質シリコンカーバイド
からなるｐ層、真性の非晶質シリコンからなる発電層及
びｎ型の非晶質シリコンからなるｎ層を積層したものを
用いることができる。或いは、第１電極３１側から上記
ｎ層、発電層及びｐ層を順次積層したものを用いても良
い。さらには、第１電極３１側から上記ｐ，ｉ及びｎ層
を積層し、このｎ層上にさらにｐ型の非晶質シリコンか
らなる第２ｐ層、非晶質シリコンゲルマニウムからなる
第２発電層及び非晶質シリコンからなる第２ｎ層を積層
した、所謂積層型の構成のものを用いても良い。斯かる
積層型の構成によれば、各発電層の膜厚を単一の発電層
を用いたものよりも薄膜化することができるため、発電
層中の内部電界強度を増大でき、光劣化による特性低下
を抑制することができる。As the photoelectric conversion layer 32, for example, the first
A layer in which a p-layer made of p-type amorphous silicon carbide, a power generation layer made of intrinsic amorphous silicon, and an n-layer made of n-type amorphous silicon can be used in this order from the electrode 31 side. . Alternatively, a layer in which the n layer, the power generation layer, and the p layer are sequentially stacked from the first electrode 31 side may be used. Further, the p, i, and n layers are stacked from the first electrode 31 side, and a second p layer made of p-type amorphous silicon and a second power generation layer made of amorphous silicon germanium are further formed on the n layer. Also, a so-called stacked type structure in which a second n-layer made of amorphous silicon is stacked may be used. According to such a stacked configuration, since the thickness of each power generation layer can be made thinner than that using a single power generation layer, the internal electric field strength in the power generation layer can be increased, It is possible to suppress deterioration in characteristics.
【００１８】また、上記保護層２３はエポキシ樹脂等の
絶縁性を有する材料から構成することができる。そし
て、太陽電池部２は図示しないＥＶＡ等からなる接着層
により、下地材１の発電領域Ａ上に、該下地材１の非発
電領域Ｂから熱伝達可能に載置されている。The protective layer 23 can be made of an insulating material such as epoxy resin. The solar cell section 2 is mounted on the power generation area A of the base material 1 by an adhesive layer made of EVA or the like (not shown) so that heat can be transferred from the non-power generation area B of the base material 1.
【００１９】そして、斯かる構成を有する本発明太陽電
池モジュールにあっては、光は図中矢印で示す方向か
ら、太陽電池部２及び下地材１における非発電領域Ｂに
入射する。このため、光の入射により太陽電池部２及び
非発電領域Ｂにおける下地材１の両方の温度が上昇する
こととなる。ここで、本発明においては前述の通り、下
地材１が良好な熱伝導性を有する材料から構成されてお
り、太陽電池部２は非発電領域Ｂから熱伝達可能に載置
されている。従って、非発電領域Ｂにおける下地材１の
温度が上昇すると、この熱は発電領域Ａにおける下地材
１にも伝播し、そして裏側から太陽電池部２を保温する
ために、太陽電池部２の放熱が抑制され該太陽電池部２
を高い温度に維持することが可能となる。このため、本
発明によれば従来の様に断熱材を備えることなく太陽電
池部２を高い温度に維持することが可能となり、光劣化
により生じる光電変換特性の低下を抑制することができ
る。In the solar cell module according to the present invention having such a configuration, light enters the non-power-generating region B in the solar cell section 2 and the base material 1 from the direction indicated by the arrow in the figure. For this reason, the temperature of both the solar cell unit 2 and the base material 1 in the non-power generation region B increases due to the incidence of light. Here, in the present invention, as described above, the base material 1 is made of a material having good thermal conductivity, and the solar cell unit 2 is placed so as to be able to transfer heat from the non-power generation region B. Therefore, when the temperature of the base material 1 in the non-power generation region B rises, this heat also propagates to the base material 1 in the power generation region A, and the heat of the solar cell portion 2 Is suppressed and the solar cell unit 2
Can be maintained at a high temperature. Therefore, according to the present invention, it is possible to maintain the solar cell unit 2 at a high temperature without providing a heat insulating material as in the related art, and it is possible to suppress a decrease in photoelectric conversion characteristics caused by photodegradation.
【００２０】ところで、斯かる本発明太陽電池モジュー
ルにおいては、上述の様に非発電領域Ｂにおける下地材
１及び太陽電池部２の両方で光が吸収される。このと
き、下地材１と太陽電池部２とで夫々吸収される光の量
が異なると、下地材１と太陽電池部２との温度上昇の割
合が異なってくる。このように下地材１と太陽電池部２
とで温度上昇の割合が異なると、太陽電池部２における
温度分布が不均一となる。By the way, in the solar cell module of the present invention, light is absorbed by both the base material 1 and the solar cell section 2 in the non-power generation region B as described above. At this time, if the amounts of light absorbed by the base material 1 and the solar cell unit 2 are different, the rate of temperature rise between the base material 1 and the solar cell unit 2 is different. Thus, the base material 1 and the solar cell unit 2
If the rate of temperature rise is different between the two, the temperature distribution in the solar cell unit 2 becomes non-uniform.
【００２１】例えば、下地材１における光吸収が太陽電
池部２における光吸収よりも大きな場合、下地材１の方
が太陽電池部２よりも高温となる。そして、前述の通り
下地材１の熱が太陽電池部２に伝わるために、太陽電池
部２の外周部が中央部よりも温度が高くなる。このよう
な温度分布が生じると、太陽電池部２の中央部に位置す
る太陽電池素子２２の光劣化は外周部に位置する太陽電
池素子２２ほどには抑制されない。このため、中央部に
位置する太陽電池素子２２の光電変換特性は外周部に位
置する太陽電池素子２２よりも低い特性となり、この結
果太陽電池部２全体の出力は、特性の低い中央部に位置
する太陽電池素子２２の特性に律束されて低い値しか得
られない。For example, when the light absorption in the base material 1 is larger than the light absorption in the solar cell unit 2, the temperature of the base material 1 is higher than that of the solar cell unit 2. Then, as described above, since the heat of the base material 1 is transmitted to the solar cell unit 2, the temperature of the outer peripheral portion of the solar cell portion 2 becomes higher than that of the central portion. When such a temperature distribution occurs, photodeterioration of the solar cell element 22 located at the center of the solar cell unit 2 is not suppressed as much as the solar cell element 22 located at the outer peripheral part. For this reason, the photoelectric conversion characteristics of the solar cell element 22 located in the central part are lower than those of the solar cell element 22 located in the outer peripheral part. Only a low value can be obtained depending on the characteristics of the solar cell element 22.
【００２２】また、太陽電池部２における光吸収が下地
材１における光吸収よりも大きな場合には、太陽電池部
２の方が下地材１よりも高温となる。このため、太陽電
池部２の熱が下地材１に伝わって放熱され、特に太陽電
池部２の外周部が中央部よりも温度が低くなる。斯様な
場合には、前述の場合とは逆に、外周部に位置する太陽
電池素子２２の光電変換特性が中央部に位置する太陽電
池素子２２の特性よりも低い特性となる。このため、太
陽電池部２全体の出力は、特性の低い外周部に位置する
太陽電池素子２２の特性に律束されて、低い値しか得ら
れない。When the light absorption in the solar cell section 2 is larger than the light absorption in the base material 1, the temperature of the solar cell section 2 becomes higher than that of the base material 1. For this reason, the heat of the solar cell unit 2 is transmitted to the base material 1 and dissipated, and the temperature of the outer peripheral part of the solar cell part 2 is lower than that of the central part. In such a case, contrary to the above-described case, the photoelectric conversion characteristics of the solar cell element 22 located at the outer peripheral part are lower than those of the solar cell element 22 located at the central part. Therefore, the output of the entire solar cell unit 2 is limited by the characteristics of the solar cell element 22 located on the outer peripheral portion having low characteristics, and only a low value is obtained.
【００２３】以上の次第から、下地材１の光吸収特性と
太陽電池部２の光吸収特性とは略同程度とすることが好
ましい。下地材１の光吸収特性と太陽電池部２の光吸収
特性とが略等しい場合には、下地材１と太陽電池部２の
温度が略同程度となる。従って、上記のような温度分布
が生じることがなく、太陽電池部２の全体に亘って光劣
化の抑制効果を略同程度とすることができ、良好な光電
変換特性を得ることができる。From the above, it is preferable that the light absorption characteristics of the base material 1 and the light absorption characteristics of the solar cell unit 2 be substantially the same. When the light absorption characteristics of the base material 1 and the light absorption characteristics of the solar cell unit 2 are substantially equal, the temperatures of the base material 1 and the solar cell unit 2 are substantially the same. Therefore, the temperature distribution as described above does not occur, and the effect of suppressing light degradation can be made substantially the same over the entire solar cell unit 2, and good photoelectric conversion characteristics can be obtained.
【００２４】（実施例１）以下に、本発明の実施例につ
いて説明する。まず、下地材としてアルミニウム合金板
を用い、４０ｃｍ×４０ｃｍの大きさの下地材の中央部
に位置する発電領域上に、２０ｃｍ×２０ｃｍの大きさ
の太陽電池部２を、ＥＶＡからなる接着層を介して載置
した。(Embodiment 1) An embodiment of the present invention will be described below. First, an aluminum alloy plate was used as a base material, and a solar cell unit 2 having a size of 20 cm × 20 cm was formed on a power generation region located in the center of the base material having a size of 40 cm × 40 cm by bonding an adhesive layer made of EVA. Placed via.
【００２５】太陽電池部は、図２に示す如く基板上にお
いて複数の太陽電池素子を直列接続させた構成を有して
いる。まず、ガラスからなる基板の表面に、熱ＣＶＤ法
を用いて厚さ約８０００ÅのＳｎＯ2膜を形成し、この
ＳｎＯ2膜をレーザスクライブ法を用いて複数の第１電
極に分割した。次に、この複数の第１電極上を含んで基
板の全面に、プラズマＣＶＤ法を用いて膜厚約１００Å
のｐ型非晶質シリコンカーバイドからなる第１ｐ層、膜
厚約８００Åの真性の非晶質シリコンからなる第１発電
層、膜厚約３００Åのｎ型微結晶シリコンからなる第１
ｎ層、膜厚約１００Åのｐ型シリコンからなる第２ｐ
層、膜厚約１５００Åの真性の非晶質シリコンゲルマニ
ウムからなる第２発電層、及び膜厚約２００Åのｎ型非
晶質シリコンからなる第２ｎ層を積層し、非晶質半導体
の積層膜を形成した。そして、この積層膜をレーザスク
ライブ法により複数の光電変換層に分割した。次いで、
この複数の光電変換層上を含んで基板上にスパッタ法を
用いてＡｇ膜を形成した。そして、このＡｇ膜をレーザ
スクライブ法により複数の第２電極に分割した。以上の
工程により、本実施例における太陽電池素子を形成し
た。そして、この太陽電池素子の表面を、エポキシ樹脂
からなる保護層で被覆することにより太陽電池部を作製
した。最後に、この太陽電池部をＥＶＡからなる接着層
により下地材の発電領域上に載置した。The solar cell section has a configuration in which a plurality of solar cell elements are connected in series on a substrate as shown in FIG. First, the surface of a substrate made of glass, using a thermal CVD method to form an SnO 2 film having a thickness of about 8000 Å, and divides the SnO 2 film to a plurality of first electrodes by using a laser scribing method. Next, over the entire surface of the substrate including the plurality of first electrodes, a film thickness of about 100
A first p-layer made of p-type amorphous silicon carbide, a first power generation layer made of intrinsic amorphous silicon having a thickness of about 800 °, and a first p-layer made of n-type microcrystalline silicon having a thickness of about 300 °
The second p layer made of p-type silicon having an n-layer and a thickness of about 100 °
A second power generation layer made of intrinsic amorphous silicon germanium having a thickness of about 1500 °, and a second n-layer made of n-type amorphous silicon having a thickness of about 200 °. Formed. Then, the laminated film was divided into a plurality of photoelectric conversion layers by a laser scribe method. Then
An Ag film was formed on the substrate including the plurality of photoelectric conversion layers by using a sputtering method. Then, the Ag film was divided into a plurality of second electrodes by a laser scribe method. Through the above steps, the solar cell element of this example was formed. Then, the surface of the solar cell element was covered with a protective layer made of an epoxy resin to produce a solar cell section. Finally, the solar cell unit was mounted on the power generation region of the base material with an adhesive layer made of EVA.
【００２６】そして、以上の構成において、下地材表面
を様々な色に着色し、下地材表面の反射率を変化させた
太陽電池モジュールを作製し、光劣化率を調べた。その
結果を図３の特性図に示す。尚、同図において横軸は波
長４００ｎｍ〜７５０ｎｍにおける下地材の反射率と太
陽電池部の反射率との比（下地材の反射率／太陽電池部
の反射率）の平均値であり、縦軸は光劣化率（１−光劣
化後の光電変換効率／光劣化前の光電変換効率）であ
る。尚、光劣化は、太陽電池モジュールを１ヶ月間屋外
で暴露することにより行った。Then, in the above configuration, the surface of the base material was colored in various colors, and a solar cell module in which the reflectance of the base material surface was changed was manufactured, and the light deterioration rate was examined. The results are shown in the characteristic diagram of FIG. In the figure, the horizontal axis is the average value of the ratio of the reflectance of the base material to the reflectance of the solar cell unit (reflectivity of the base material / reflectivity of the solar cell unit) at a wavelength of 400 nm to 750 nm, and the vertical axis is Is the light deterioration rate (1−photoelectric conversion efficiency after light deterioration / photoelectric conversion efficiency before light deterioration). The light deterioration was performed by exposing the solar cell module outdoors for one month.
【００２７】図３に示す如く、波長４００ｎｍ〜７５０
ｎｍにおける下地材の反射率と太陽電池部の反射率との
比の平均値を０．７以上、１．３以下の範囲とすること
で、光劣化率を５％以下とすることができた。より好ま
しくは、前記反射率の比の平均値を０．９以上、１．１
以下の範囲とすることで、光劣化率を３％以下とするこ
とができた。これは、反射率の比を上記特定の範囲とす
ることによって、下地材における非発電領域の光吸収特
性と、太陽電池部の光吸収特性とを略同程度とすること
ができ、従って太陽電池部に生じる温度分布を小さくす
ることができたことによるものと考えられる。As shown in FIG. 3, the wavelength is from 400 nm to 750.
By setting the average value of the ratio of the reflectance of the base material to the reflectance of the solar cell part in nm in the range of 0.7 or more and 1.3 or less, the light deterioration rate could be 5% or less. . More preferably, the average value of the reflectance ratio is 0.9 or more, and
With the following range, the light degradation rate could be reduced to 3% or less. This is because the light absorption characteristic of the non-power generation region in the base material and the light absorption characteristic of the solar cell portion can be made substantially the same by setting the reflectance ratio to the above specific range, and therefore, the solar cell It is considered that the temperature distribution generated in the portion could be reduced.
【００２８】（実施例２）本実施例においては、前述の
実施例１において第２発電層中のゲルマニウム量を種々
変化させ、太陽電池部の光吸収特性を変化させた太陽電
池モジュールを作製した。また、同時に下地材表面に着
色することにより該下地材の反射率も変化させ、波長４
００ｎｍ〜７５０ｎｍにおける下地材と太陽電池部の反
射率の比の平均値が０．９〜１．１の範囲となるように
調整した。尚、その他の工程は実施例１と同一である。(Example 2) In this example, a solar cell module was produced in which the amount of germanium in the second power generation layer was changed variously in Example 1 described above to change the light absorption characteristics of the solar cell part. . At the same time, by coloring the surface of the base material, the reflectance of the base material is also changed.
The average value of the reflectance ratio between the base material and the solar cell portion in the range of 00 nm to 750 nm was adjusted to be in the range of 0.9 to 1.1. The other steps are the same as in the first embodiment.
【００２９】そして、以上のようにして作製した実施例
２の太陽電池モジュールについて、光劣化後の光電変換
特性を調べた。その結果を図４の特性図に示す。尚、同
図において横軸は第２発電層中のゲルマニウム量であ
り、縦軸は光劣化後の光電変換効率である。尚、光劣化
の条件は実施例１と同一である。Then, the photovoltaic conversion characteristics of the solar cell module of Example 2 manufactured as described above after light degradation were examined. The results are shown in the characteristic diagram of FIG. In the figure, the horizontal axis represents the amount of germanium in the second power generation layer, and the vertical axis represents the photoelectric conversion efficiency after photodegradation. The conditions for light degradation are the same as in the first embodiment.
【００３０】同図に示す如く、第２発電層中のゲルマニ
ウム量を１０原子％以上、４５原子％未満とすること
で、光劣化後も９％以上の高い光電変換効率を得ること
ができた。一般に、第２発電層中のゲルマニウム量を増
加させると太陽電池素子における光の吸収量が増大す
る。従って、第２発電層中のゲルマニウム量を１０原子
％以上とすることにより光電変換効率が９％以上に向上
した理由は、ゲルマニウム量の増加により太陽電池素子
における光の吸収量が増大し、出力電流が向上したこと
に因るものと考えられる。また、ゲルマニウム量が４５
原子％よりも多くなると、このゲルマニウム原子に起因
する欠陥が増大するために、光電変換効率が低下したも
のと考えられる。従って、第２発電層中のゲルマニウム
量は１０原子％以上、４５原子％以下の範囲とすること
が好ましい。As shown in the figure, by setting the amount of germanium in the second power generation layer to 10 atomic% or more and less than 45 atomic%, a high photoelectric conversion efficiency of 9% or more was obtained even after photodegradation. . In general, increasing the amount of germanium in the second power generation layer increases the amount of light absorbed by the solar cell element. Therefore, the reason why the photoelectric conversion efficiency was improved to 9% or more by setting the germanium content in the second power generation layer to 10 atomic% or more is that the amount of germanium increases the light absorption amount in the solar cell element, and the output power increases. It is considered that the current was improved. In addition, the germanium content is 45
It is considered that when the content is more than atomic%, the number of defects caused by the germanium atoms increases, so that the photoelectric conversion efficiency decreases. Therefore, it is preferable that the amount of germanium in the second power generation layer be in the range of 10 at% to 45 at%.
【００３１】以上説明した如く、本発明によれば簡単な
構造で光劣化後に良好な特性を有する太陽電池モジュー
ルを提供することができる。As described above, according to the present invention, it is possible to provide a solar cell module having a simple structure and excellent characteristics after light deterioration.
【００３２】尚、本発明は以上の実施形態で説明した太
陽電池モジュールの構成に限定されるものではない。例
えば、太陽電池部としてガラス、プラスチックからなる
透光性の基板上に、単一のｐ，ｉ，ｎ層を有するもの、
２つのｐ，ｉ，ｎ層を有するものに限らず、３つ以上の
ｐ，ｉ，ｎ層を備えたものについても本発明を適用する
ことができる。また、基板として金属板、プラスチック
板等を用い、この基板の光入射面側にｐ，ｉ，ｎ層を夫
々有するものであっても構わない。The present invention is not limited to the configuration of the solar cell module described in the above embodiment. For example, a solar cell unit having a single p, i, n layer on a translucent substrate made of glass or plastic,
The present invention can be applied not only to those having two p, i, n layers but also to those having three or more p, i, n layers. Alternatively, a metal plate, a plastic plate, or the like may be used as the substrate, and the substrate may have p, i, and n layers on the light incident surface side.
【００３３】[0033]
【発明の効果】以上説明した如く、本発明によれば簡単
な構造で光劣化後に良好な特性を有する太陽電池モジュ
ールを提供することができる。従って、製造コストや重
量の増大を招くことなく、光劣化による特性低下の少な
い太陽電池モジュールを提供することができる。As described above, according to the present invention, it is possible to provide a solar cell module having a simple structure and excellent characteristics after light deterioration. Therefore, it is possible to provide a solar cell module in which characteristics are less deteriorated due to light degradation without increasing manufacturing cost and weight.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明の実施の形態に係る太陽電池モジュール
の斜視図である。FIG. 1 is a perspective view of a solar cell module according to an embodiment of the present invention.
【図２】図１（Ｂ）におけるＣ−Ｃ線の断面図である。FIG. 2 is a sectional view taken along line CC in FIG. 1 (B).
【図３】実施例１の太陽電池モジュールの劣化率を示す
特性図である。FIG. 3 is a characteristic diagram showing a deterioration rate of the solar cell module of Example 1.
【図４】実施例２の太陽電池モジュールの光劣化後の光
電変換効率を示す特性図である。FIG. 4 is a characteristic diagram showing a photoelectric conversion efficiency of the solar cell module of Example 2 after light degradation.
【図５】従来の太陽電池モジュールの断面図である。FIG. 5 is a cross-sectional view of a conventional solar cell module.
１…下地材、Ａ…発電領域、Ｂ…非発電領域、２…太陽
電池部、２１…基板、２２…太陽電池素子、２３…保護
層DESCRIPTION OF REFERENCE NUMERALS 1: base material, A: power generation region, B: non-power generation region, 2: solar cell unit, 21: substrate, 22: solar cell element, 23: protective layer
Claims (7)
発電領域上に載置された太陽電池部と、を有すると共
に、 前記下地材は、その表面に前記太陽電池部から露出する
非発電領域を有し、且つ前記太陽電池部は、前記非発電
領域から熱伝達可能に載置されていることを特徴とする
太陽電池モジュール。1. A base material having thermal conductivity, and a solar cell unit mounted on a power generation region of the base material, and the base material is exposed from the solar cell unit on a surface thereof. A solar cell module having a non-power generation area, and wherein the solar cell section is mounted so as to be able to transfer heat from the non-power generation area.
同程度の光吸収特性を有することを特徴とする請求項１
記載の太陽電池モジュール。2. The non-power generation region has substantially the same light absorption characteristics as the solar cell unit.
The solar cell module as described.
記非発電領域表面の反射率と前記太陽電池部表面の反射
率との比の平均値が、０．７以上、１．３以下の範囲で
あることを特徴とする請求項１又は２記載の太陽電池モ
ジュール。3. The average value of the ratio between the reflectance of the surface of the non-power generation region and the reflectance of the surface of the solar cell portion at a wavelength of 400 nm to 750 nm is in a range of 0.7 or more and 1.3 or less. The solar cell module according to claim 1 or 2, wherein
前記非発電領域表面の反射率と前記太陽電池部表面の反
射率との比の平均値が、０．９以上、１．１以下の範囲
であることを特徴とする請求項１乃至３のいずれかに記
載の太陽電池モジュール。4. An average value of the ratio of the reflectance of the surface of the non-power generation region to the reflectance of the surface of the solar cell unit at a wavelength of 400 nm to 750 nm in a range from 0.9 to 1.1. The solar cell module according to any one of claims 1 to 3, wherein:
る太陽電池素子を有することを特徴とする請求項１乃至
４のいずれかに記載の太陽電池モジュール。5. The solar cell module according to claim 1, wherein the solar cell section has a solar cell element made of an amorphous semiconductor.
ルマニウムからなる発電層を含むことを特徴とする請求
項５記載の太陽電池モジュール。6. The solar cell module according to claim 5, wherein the solar cell element includes a power generation layer made of amorphous silicon germanium.
原子％以上、４５原子％未満の範囲であることを特徴と
する請求項６記載の太陽電池モジュール。7. The amount of germanium in the power generation layer is 10
The solar cell module according to claim 6, wherein the content is in the range of at least atomic% and less than 45 atomic%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11207928A JP2001036123A (en) | 1999-07-22 | 1999-07-22 | Solar cell module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11207928A JP2001036123A (en) | 1999-07-22 | 1999-07-22 | Solar cell module |
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| Publication Number | Publication Date |
|---|---|
| JP2001036123A true JP2001036123A (en) | 2001-02-09 |
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| JP11207928A Pending JP2001036123A (en) | 1999-07-22 | 1999-07-22 | Solar cell module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2017056369A1 (en) * | 2015-09-30 | 2018-06-21 | パナソニックＩｐマネジメント株式会社 | Solar cell module |
-
1999
- 1999-07-22 JP JP11207928A patent/JP2001036123A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2017056369A1 (en) * | 2015-09-30 | 2018-06-21 | パナソニックＩｐマネジメント株式会社 | Solar cell module |
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