JP2001023437A - Polyaniline paste, manufacture of solid electrolytic capacitor using it and solid electrolyte capacitor - Google Patents
Polyaniline paste, manufacture of solid electrolytic capacitor using it and solid electrolyte capacitorInfo
- Publication number
- JP2001023437A JP2001023437A JP11195184A JP19518499A JP2001023437A JP 2001023437 A JP2001023437 A JP 2001023437A JP 11195184 A JP11195184 A JP 11195184A JP 19518499 A JP19518499 A JP 19518499A JP 2001023437 A JP2001023437 A JP 2001023437A
- Authority
- JP
- Japan
- Prior art keywords
- polyaniline
- acid
- electrolytic capacitor
- paste
- solid electrolytic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000767 polyaniline Polymers 0.000 title claims abstract description 125
- 239000003990 capacitor Substances 0.000 title claims description 92
- 239000007787 solid Substances 0.000 title claims description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000007784 solid electrolyte Substances 0.000 title description 3
- 239000003792 electrolyte Substances 0.000 claims abstract description 66
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims abstract description 34
- 229920000642 polymer Polymers 0.000 claims abstract description 34
- 239000002904 solvent Substances 0.000 claims abstract description 23
- 238000001035 drying Methods 0.000 claims abstract description 22
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- 229920002647 polyamide Polymers 0.000 claims abstract description 18
- 239000004952 Polyamide Substances 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 239000002019 doping agent Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 62
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N N-phenyl amine Natural products NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims description 60
- -1 aniline compound Chemical class 0.000 claims description 58
- 239000000243 solution Substances 0.000 claims description 48
- 239000002245 particle Substances 0.000 claims description 40
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 31
- 239000012935 ammoniumperoxodisulfate Substances 0.000 claims description 31
- 239000007864 aqueous solution Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 150000004985 diamines Chemical class 0.000 claims description 13
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 claims description 7
- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 claims description 5
- 229940044654 phenolsulfonic acid Drugs 0.000 claims description 5
- ZMPRRFPMMJQXPP-UHFFFAOYSA-N 2-sulfobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1S(O)(=O)=O ZMPRRFPMMJQXPP-UHFFFAOYSA-N 0.000 claims description 4
- JXBUOZMYKQDZFY-UHFFFAOYSA-N 4-hydroxybenzene-1,3-disulfonic acid Chemical compound OC1=CC=C(S(O)(=O)=O)C=C1S(O)(=O)=O JXBUOZMYKQDZFY-UHFFFAOYSA-N 0.000 claims description 4
- HWTDMFJYBAURQR-UHFFFAOYSA-N 80-82-0 Chemical compound OS(=O)(=O)C1=CC=CC=C1[N+]([O-])=O HWTDMFJYBAURQR-UHFFFAOYSA-N 0.000 claims description 3
- 230000009477 glass transition Effects 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 17
- 239000002253 acid Substances 0.000 abstract description 13
- 239000011521 glass Substances 0.000 abstract description 6
- 239000003960 organic solvent Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 33
- 239000000126 substance Substances 0.000 description 30
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 21
- 239000003153 chemical reaction reagent Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000003786 synthesis reaction Methods 0.000 description 16
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 15
- 238000005470 impregnation Methods 0.000 description 14
- 239000007788 liquid Substances 0.000 description 13
- 229910052715 tantalum Inorganic materials 0.000 description 13
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 12
- 230000007423 decrease Effects 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 239000004332 silver Substances 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 8
- 238000006116 polymerization reaction Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 125000003118 aryl group Chemical group 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 229920001940 conductive polymer Polymers 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 7
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- 239000008188 pellet Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000004962 Polyamide-imide Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229920002312 polyamide-imide Polymers 0.000 description 5
- 229920000128 polypyrrole Polymers 0.000 description 5
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000012153 distilled water Substances 0.000 description 4
- 150000002430 hydrocarbons Chemical group 0.000 description 4
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 4
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- DIZBQMTZXOUFTD-UHFFFAOYSA-N 2-(furan-2-yl)-3h-benzimidazole-5-carboxylic acid Chemical compound N1C2=CC(C(=O)O)=CC=C2N=C1C1=CC=CO1 DIZBQMTZXOUFTD-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000004984 aromatic diamines Chemical class 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 238000010296 bead milling Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 229920005573 silicon-containing polymer Polymers 0.000 description 2
- 150000003460 sulfonic acids Chemical class 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 2
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 2
- NJMOHBDCGXJLNJ-UHFFFAOYSA-N trimellitic anhydride chloride Chemical compound ClC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 NJMOHBDCGXJLNJ-UHFFFAOYSA-N 0.000 description 2
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- QYGBYAQGBVHMDD-XQRVVYSFSA-N (z)-2-cyano-3-thiophen-2-ylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C/C1=CC=CS1 QYGBYAQGBVHMDD-XQRVVYSFSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- LDMOEFOXLIZJOW-UHFFFAOYSA-N 1-dodecanesulfonic acid Chemical compound CCCCCCCCCCCCS(O)(=O)=O LDMOEFOXLIZJOW-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- 229940015297 1-octanesulfonic acid Drugs 0.000 description 1
- BWRJIDMRILXEDW-UHFFFAOYSA-N 2,3,4-trichlorobenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=C(Cl)C(Cl)=C1Cl BWRJIDMRILXEDW-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- AWFYPPSBLUWMFQ-UHFFFAOYSA-N 2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]-1-(1,4,6,7-tetrahydropyrazolo[4,3-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CC2=C(CC1)NN=C2 AWFYPPSBLUWMFQ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- JHWIEAWILPSRMU-UHFFFAOYSA-N 2-methyl-3-pyrimidin-4-ylpropanoic acid Chemical compound OC(=O)C(C)CC1=CC=NC=N1 JHWIEAWILPSRMU-UHFFFAOYSA-N 0.000 description 1
- OORBHYFTTSLSRU-UHFFFAOYSA-N 2-methyl-5-propan-2-ylbenzenesulfonic acid Chemical compound CC(C)C1=CC=C(C)C(S(O)(=O)=O)=C1 OORBHYFTTSLSRU-UHFFFAOYSA-N 0.000 description 1
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 1
- WBDYQJGGWYVVHQ-UHFFFAOYSA-N 3-methoxycarbonylpyridine-2,6-dicarboxylic acid Chemical compound COC(=O)C1=CC=C(C(O)=O)N=C1C(O)=O WBDYQJGGWYVVHQ-UHFFFAOYSA-N 0.000 description 1
- UJBOOUHRTQVGRU-UHFFFAOYSA-N 3-methylcyclohexan-1-one Chemical compound CC1CCCC(=O)C1 UJBOOUHRTQVGRU-UHFFFAOYSA-N 0.000 description 1
- SGEWZUYVXQESSB-UHFFFAOYSA-N 3-methylheptane-1,7-diamine Chemical compound NCCC(C)CCCCN SGEWZUYVXQESSB-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- WVDRSXGPQWNUBN-UHFFFAOYSA-N 4-(4-carboxyphenoxy)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C=C1 WVDRSXGPQWNUBN-UHFFFAOYSA-N 0.000 description 1
- NEQFBGHQPUXOFH-UHFFFAOYSA-N 4-(4-carboxyphenyl)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C=C1 NEQFBGHQPUXOFH-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- KWOIWTRRPFHBSI-UHFFFAOYSA-N 4-[2-[3-[2-(4-aminophenyl)propan-2-yl]phenyl]propan-2-yl]aniline Chemical compound C=1C=CC(C(C)(C)C=2C=CC(N)=CC=2)=CC=1C(C)(C)C1=CC=C(N)C=C1 KWOIWTRRPFHBSI-UHFFFAOYSA-N 0.000 description 1
- HESXPOICBNWMPI-UHFFFAOYSA-N 4-[2-[4-[2-(4-aminophenyl)propan-2-yl]phenyl]propan-2-yl]aniline Chemical compound C=1C=C(C(C)(C)C=2C=CC(N)=CC=2)C=CC=1C(C)(C)C1=CC=C(N)C=C1 HESXPOICBNWMPI-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- DJQPGZPKGHRJOK-UHFFFAOYSA-N 4-[4-[1-[4-(4-aminophenoxy)phenyl]cyclohexyl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C2(CCCCC2)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 DJQPGZPKGHRJOK-UHFFFAOYSA-N 0.000 description 1
- NFLVPFYEUUKWTB-UHFFFAOYSA-N 4-[4-[1-[4-(4-aminophenoxy)phenyl]cyclopentyl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C2(CCCC2)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 NFLVPFYEUUKWTB-UHFFFAOYSA-N 0.000 description 1
- MUDNCBUJHBRRME-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)-3,5-dibromophenyl]butan-2-yl]-2,6-dibromophenoxy]aniline Chemical compound C=1C(Br)=C(OC=2C=CC(N)=CC=2)C(Br)=CC=1C(C)(CC)C(C=C1Br)=CC(Br)=C1OC1=CC=C(N)C=C1 MUDNCBUJHBRRME-UHFFFAOYSA-N 0.000 description 1
- UCGUBZDRPKFHQJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)-3,5-dimethylphenyl]butan-2-yl]-2,6-dimethylphenoxy]aniline Chemical compound C=1C(C)=C(OC=2C=CC(N)=CC=2)C(C)=CC=1C(C)(CC)C(C=C1C)=CC(C)=C1OC1=CC=C(N)C=C1 UCGUBZDRPKFHQJ-UHFFFAOYSA-N 0.000 description 1
- URSHIKLCCZNPFO-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)-3-methylphenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-methylphenoxy]aniline Chemical compound CC1=CC(C(C=2C=C(C)C(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)=CC=C1OC1=CC=C(N)C=C1 URSHIKLCCZNPFO-UHFFFAOYSA-N 0.000 description 1
- BVDPIHNAIJHQJK-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)-3-methylphenyl]butan-2-yl]-2-methylphenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C(C)=CC=1C(C)(CC)C(C=C1C)=CC=C1OC1=CC=C(N)C=C1 BVDPIHNAIJHQJK-UHFFFAOYSA-N 0.000 description 1
- ALFOPRUBEYLKCR-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)-3-methylphenyl]propan-2-yl]-2-methylphenoxy]aniline Chemical compound CC1=CC(C(C)(C)C=2C=C(C)C(OC=3C=CC(N)=CC=3)=CC=2)=CC=C1OC1=CC=C(N)C=C1 ALFOPRUBEYLKCR-UHFFFAOYSA-N 0.000 description 1
- LDFYRFKAYFZVNH-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 LDFYRFKAYFZVNH-UHFFFAOYSA-N 0.000 description 1
- HYDATEKARGDBKU-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]phenoxy]aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 1
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 1
- RJWBTWIBUIGANW-UHFFFAOYSA-N 4-chlorobenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=C(Cl)C=C1 RJWBTWIBUIGANW-UHFFFAOYSA-N 0.000 description 1
- KWXICGTUELOLSQ-UHFFFAOYSA-N 4-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=C(S(O)(=O)=O)C=C1 KWXICGTUELOLSQ-UHFFFAOYSA-N 0.000 description 1
- ZDTXQHVBLWYPHS-UHFFFAOYSA-N 4-nitrotoluene-2-sulfonic acid Chemical compound CC1=CC=C([N+]([O-])=O)C=C1S(O)(=O)=O ZDTXQHVBLWYPHS-UHFFFAOYSA-N 0.000 description 1
- MSOTUIWEAQEETA-UHFFFAOYSA-N 4-octylbenzenesulfonic acid Chemical compound CCCCCCCCC1=CC=C(S(O)(=O)=O)C=C1 MSOTUIWEAQEETA-UHFFFAOYSA-N 0.000 description 1
- NRZONFZDVPNEHO-UHFFFAOYSA-N 5-carbamoylnaphthalene-1,6-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)N)=C(C(O)=O)C=CC2=C1C(O)=O NRZONFZDVPNEHO-UHFFFAOYSA-N 0.000 description 1
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 description 1
- DEXFNLNNUZKHNO-UHFFFAOYSA-N 6-[3-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-3-oxopropyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)C(CCC1=CC2=C(NC(O2)=O)C=C1)=O DEXFNLNNUZKHNO-UHFFFAOYSA-N 0.000 description 1
- 102100024406 60S ribosomal protein L15 Human genes 0.000 description 1
- 239000001741 Ammonium adipate Substances 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- 102100029203 F-box only protein 8 Human genes 0.000 description 1
- 101001117935 Homo sapiens 60S ribosomal protein L15 Proteins 0.000 description 1
- 101100334493 Homo sapiens FBXO8 gene Proteins 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000019293 ammonium adipate Nutrition 0.000 description 1
- JOSWYUNQBRPBDN-UHFFFAOYSA-P ammonium dichromate Chemical compound [NH4+].[NH4+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O JOSWYUNQBRPBDN-UHFFFAOYSA-P 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 1
- FDQSRULYDNDXQB-UHFFFAOYSA-N benzene-1,3-dicarbonyl chloride Chemical compound ClC(=O)C1=CC=CC(C(Cl)=O)=C1 FDQSRULYDNDXQB-UHFFFAOYSA-N 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- LSDYQEILXDCDTR-UHFFFAOYSA-N bis[4-(4-aminophenoxy)phenyl]methanone Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 LSDYQEILXDCDTR-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 125000000392 cycloalkenyl group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- OYLGLPVAKCEIKU-UHFFFAOYSA-N diazanium;sulfonato sulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OS([O-])(=O)=O OYLGLPVAKCEIKU-UHFFFAOYSA-N 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- UBPGILLNMDGSDS-UHFFFAOYSA-N diethylene glycol diacetate Chemical compound CC(=O)OCCOCCOC(C)=O UBPGILLNMDGSDS-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- IQXFLWAUTHUOQK-UHFFFAOYSA-N dihydrobromide dihydrochloride Chemical compound Cl.Cl.Br.Br IQXFLWAUTHUOQK-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000003411 electrode reaction Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- CJMZLCRLBNZJQR-UHFFFAOYSA-N ethyl 2-amino-4-(4-fluorophenyl)thiophene-3-carboxylate Chemical compound CCOC(=O)C1=C(N)SC=C1C1=CC=C(F)C=C1 CJMZLCRLBNZJQR-UHFFFAOYSA-N 0.000 description 1
- QEGNUYASOUJEHD-UHFFFAOYSA-N gem-dimethylcyclohexane Natural products CC1(C)CCCCC1 QEGNUYASOUJEHD-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- SSILHZFTFWOUJR-UHFFFAOYSA-N hexadecane-1-sulfonic acid Chemical compound CCCCCCCCCCCCCCCCS(O)(=O)=O SSILHZFTFWOUJR-UHFFFAOYSA-N 0.000 description 1
- FYAQQULBLMNGAH-UHFFFAOYSA-N hexane-1-sulfonic acid Chemical compound CCCCCCS(O)(=O)=O FYAQQULBLMNGAH-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- WUOSYUHCXLQPQJ-UHFFFAOYSA-N n-(3-chlorophenyl)-n-methylacetamide Chemical compound CC(=O)N(C)C1=CC=CC(Cl)=C1 WUOSYUHCXLQPQJ-UHFFFAOYSA-N 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- DDHQTWZKAJOZQL-UHFFFAOYSA-N naphthalene-1,4,5-tricarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1C(O)=O DDHQTWZKAJOZQL-UHFFFAOYSA-N 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- WLGDAKIJYPIYLR-UHFFFAOYSA-N octane-1-sulfonic acid Chemical compound CCCCCCCCS(O)(=O)=O WLGDAKIJYPIYLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- NQSMDRQSCOCSKD-UHFFFAOYSA-N pyridine-2,3,6-tricarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=N1 NQSMDRQSCOCSKD-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- NLVXSWCKKBEXTG-UHFFFAOYSA-N vinylsulfonic acid Chemical compound OS(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Polyamides (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Paints Or Removers (AREA)
- Conductive Materials (AREA)
- Secondary Cells (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明はポリアニリン系ペー
スト、これを用いた固体電解コンデンサの製造法及び固
体電解コンデンサに関する。The present invention relates to a polyaniline paste, a method for manufacturing a solid electrolytic capacitor using the same, and a solid electrolytic capacitor.
【0002】[0002]
【従来の技術】従来の固体電解コンデンサは、弁金属と
呼ばれるタンタルペレットや、アルミニウムの拡面され
た成形体を陽極体とし、その表面に酸化皮膜を形成して
誘電体とし、二酸化マンガンや7,7′,8,8′−テ
トラシアノキノジメタン錯塩(TCNQ)等を電解質層
とする構造を有している。しかしながら、二酸化マンガ
ン(MnO2)は導電率が0.1S/cmと不充分であるた
め、高周波数域でのインピーダンスが大きく、また、高
い工程温度を必要とするMnO2電解質を多数回重ね塗
りする必要があるために、本質的に漏れ電流不良が発生
しやすいという欠点があり、これを避けるために、Mn
O2を一層形成するごとに誘電体である酸化皮膜の補修
を行うための再化成処理を行う必要があるので、電解質
形成行程が複雑であった。さらにMnO2は酸化作用を
もつため故障時に発火しやすい欠点があった。2. Description of the Related Art A conventional solid electrolytic capacitor uses a tantalum pellet called a valve metal or a molded body obtained by enlarging aluminum as an anode body, forms an oxide film on the surface thereof to form a dielectric, and forms manganese dioxide or manganese dioxide. , 7 ', 8, 8'-tetracyanoquinodimethane complex salt (TCNQ) or the like as an electrolyte layer. However, since manganese dioxide (MnO 2 ) has an insufficient conductivity of 0.1 S / cm, the impedance in a high frequency range is large, and the MnO 2 electrolyte, which requires a high process temperature, is repeatedly applied many times. Therefore, there is a disadvantage that a leakage current defect is liable to occur essentially.
Each time O 2 is formed, it is necessary to carry out a re-chemical treatment for repairing the oxide film as a dielectric, so that the electrolyte forming process is complicated. Further, MnO 2 has a drawback that it easily ignites at the time of failure due to its oxidizing action.
【0003】また、TCNQを電解質層とするものは、
TCNQがはんだ温度以下の温度で融解するために耐熱
性に劣っていた。また、TCNQの導電率は1S/cm程度
が限界であるので、より高周波特性の優れたコンデンサ
への要求には答えられるものではなかった。そのため、
MnO2やTCNQよりも導電率が高く、TCNQより
も耐熱性に優れた導電性高分子を電解質層とする固体電
解コンデンサが提案されている。例えば、特開昭60−
37ll4号公報にはドープした複素五員環式化合物重
合体からなる導電性高分子を電解質層とするコンデンサ
が開示されている。また、特開昭63−80517号公
報には複素五員環式化合物重合体の揮発性溶剤溶液の塗
布による薄膜層が形成され、かつドーピングされたもの
を電解質層とするコンデンサが開示されてる。特開昭6
4−24410号公報には酸化皮膜上にアニリンを液相
で導入した後、プロトン酸及び酸化剤の溶液を導入して
ポリアニリンからなる固体電解質層を形成する電解コン
デンサの製造方法が開示されている。[0003] Further, when TCNQ is used as an electrolyte layer,
TCNQ was inferior in heat resistance because it melted at a temperature lower than the solder temperature. Further, since the conductivity of TCNQ is limited to about 1 S / cm, it cannot meet the demand for a capacitor having more excellent high frequency characteristics. for that reason,
A solid electrolytic capacitor has been proposed in which a conductive polymer having higher conductivity than MnO 2 or TCNQ and having higher heat resistance than TCNQ is used as an electrolyte layer. For example, JP-A-60-
Japanese Patent No. 37114 discloses a capacitor in which a conductive polymer composed of a doped five-membered heterocyclic polymer is used as an electrolyte layer. Japanese Patent Application Laid-Open No. 63-80517 discloses a capacitor in which a thin film layer is formed by applying a volatile solvent solution of a polymer of a five-membered heterocyclic compound and a doped one is used as an electrolyte layer. JP 6
Japanese Patent Application Laid-Open No. 4-24410 discloses a method for manufacturing an electrolytic capacitor in which aniline is introduced in a liquid phase onto an oxide film, and then a solution of a protonic acid and an oxidizing agent is introduced to form a solid electrolyte layer made of polyaniline. .
【0004】しかし、特開昭60−37ll4号公報に
記載される導電性高分子からなる電解質形成方法は、電
解重合法であるため、工程が複雑であり、特にタンタル
固体電解コンデンサのように、コンデンサ素子が小さい
ものへ形成するのは量産性に劣っている。また、絶縁性
であるコンデンサの誘電体表面でこのような電極反応を
実施するのは、通常かなりの困難を伴う。また、特開昭
63−80517号公報に示されているように、絶縁状
態の導電性高分子の揮発性溶剤溶液の塗布による方法で
は、コンデンサ素子の表面の微細な凹凸の内部まで前記
溶液がしみ込まず、充分な厚みで導電性高分子層を形成
する事ができないのでコンデンサの耐熱性が劣り、ま
た、導電性高分子皮膜が緻密すぎるために工程上のスト
レスによる変化が大きく、外装をモールドするなどした
後の特性が低下する傾向があった。However, the method of forming an electrolyte comprising a conductive polymer described in Japanese Patent Application Laid-Open No. 60-37114 is an electrolytic polymerization method, so the steps are complicated, and particularly, like a tantalum solid electrolytic capacitor, Forming a small capacitor element is inferior in mass productivity. Also, conducting such electrode reactions on the dielectric surface of a capacitor that is insulative usually involves considerable difficulty. Further, as disclosed in JP-A-63-80517, in the method of applying a volatile solvent solution of an insulated conductive polymer, the solution is filled into the fine irregularities on the surface of the capacitor element. Since the conductive polymer layer cannot be formed with a sufficient thickness without being soaked, the heat resistance of the capacitor is inferior, and since the conductive polymer film is too dense, the change due to stress in the process is large, and the exterior is molded. There was a tendency that the properties after the operation were reduced.
【0005】特開昭64−24410号公報の方法で
は、工程上のストレスにも強い電解質層を得ることが可
能であるが、充分な厚みで導電性高分子層を形成するた
めには、多数回重ね塗りする必要があり、工程が長くな
る欠点を有していた。また、特開平7−94368号公
報には、ポリピロールを化学酸化重合で形成した後にポ
リピロールの粉末を付着させてコンデンサ素子表面に凹
凸を形成した後に化学酸化重合で第二のポリピロール層
を形成する手法が開示されているが、この方法では、凹
凸形成してカーボンペーストや銀ペーストとの接着力は
向上するが、ポリピロール層の厚みを稼げないために、
十分な厚みのポリピロール層を得るには多数回重ね塗り
する必要があり、工程が長くなる欠点を有していた。According to the method disclosed in Japanese Patent Application Laid-Open No. 64-24410, it is possible to obtain an electrolyte layer that is resistant to process stress. However, in order to form a conductive polymer layer with a sufficient thickness, a large number of electrolyte layers are required. It has to be repeatedly applied, which has the disadvantage of lengthening the process. Japanese Patent Application Laid-Open No. 7-94368 discloses a method of forming polypyrrole by chemical oxidative polymerization, then adhering polypyrrole powder to form irregularities on the capacitor element surface, and then forming a second polypyrrole layer by chemical oxidative polymerization. Although, in this method, the unevenness is formed to improve the adhesive force with the carbon paste or the silver paste, but since the thickness of the polypyrrole layer cannot be increased,
In order to obtain a polypyrrole layer having a sufficient thickness, it is necessary to repeatedly apply the coating many times, which has a disadvantage that the process becomes long.
【0006】[0006]
【発明が解決しようとする課題】請求項1及び2記載の
発明は、塗布乾燥しただけで導電性を有する膜が形成で
き、この膜は、例えば、電解質等の用途に好適であり、
低周波数から高周波数まで容量、内部抵抗、誘電損失、
インピーダンスが優れ、工程上のストレスに強く、耐熱
性に優れた固体電解コンデンサを短い工程で作製できる
ポリアニリン系ペーストを提供するものである。請求項
3記載の発明は、請求項1又は2記載の発明の効果に加
え、さらに耐熱性に優れた固体電解コンデンサを作製で
きるポリアニリン系ペーストを提供するものである。According to the first and second aspects of the present invention, a conductive film can be formed only by coating and drying, and this film is suitable for applications such as electrolytes.
From low frequency to high frequency, capacitance, internal resistance, dielectric loss,
An object of the present invention is to provide a polyaniline-based paste capable of producing a solid electrolytic capacitor having excellent impedance, resistance to process stress, and excellent heat resistance in a short process. A third aspect of the present invention provides a polyaniline-based paste capable of producing a solid electrolytic capacitor having excellent heat resistance, in addition to the effects of the first or second aspect of the present invention.
【0007】請求項4記載の発明は、請求項1、2又は
3記載の発明の効果に加え、さらにカーボンペーストや
銀ペーストを形成した時に特性の低下がないポリアニリ
ン系ペーストを提供するものである。請求項5記載の発
明は、請求項1、2、3又は4記載の発明の効果に加
え、さらに樹脂モールドやはんだリフロー等のポリアニ
リン電解質層にストレスがかかる行程の前後で特性低下
がない固体電解コンデンサを作製できるポリアニリン系
ペーストを提供するものである。According to a fourth aspect of the present invention, in addition to the effects of the first, second or third aspect of the present invention, there is provided a polyaniline-based paste which does not deteriorate in properties when a carbon paste or a silver paste is formed. . The invention according to claim 5 provides, in addition to the effects of the invention according to claim 1, 2, 3 or 4, a solid electrolytic solution having no characteristic deterioration before and after a process in which a stress is applied to the polyaniline electrolyte layer such as resin molding or solder reflow. An object of the present invention is to provide a polyaniline-based paste from which a capacitor can be manufactured.
【0008】請求項6記載の発明は、耐熱性が高く、し
かも低周波数から高周波数まで容量、内部抵抗、誘電損
失、インピーダンスが優れた固体電解コンデンサを製造
できる固体電解コンデンサの製造法を提供するものであ
る。請求項7記載の発明は、耐熱性が高く、しかも低周
波数から高周波数まで容量、内部抵抗、誘電損失、イン
ピーダンスが優れた固体電解コンデンサを簡便に短い工
程で製造できる固体電解コンデンサの製造法を提供する
ものである。請求項8記載の発明は、耐熱性が高く、し
かも低周波数から高周波数まで容量、内部抵抗、誘電損
失、インピーダンスが優れた固体電解コンデンサを簡便
に作業性よく製造できる固体電解コンデンサの製造法を
提供するものである。請求項9記載の発明は、耐熱性が
高く、しかも低周波数から高周波数まで容量、内部抵
抗、誘電損失、インピーダンスが優れた固体電解コンデ
ンサを提供するものである。The invention described in claim 6 provides a method of manufacturing a solid electrolytic capacitor having high heat resistance and capable of manufacturing a solid electrolytic capacitor having excellent capacity, internal resistance, dielectric loss, and impedance from low to high frequencies. Things. The invention according to claim 7 provides a method for manufacturing a solid electrolytic capacitor which has high heat resistance and can easily produce a solid electrolytic capacitor excellent in capacity, internal resistance, dielectric loss, and impedance from low to high frequencies in a short process. To provide. The invention according to claim 8 provides a method for manufacturing a solid electrolytic capacitor which can easily produce a solid electrolytic capacitor having high heat resistance and excellent in capacity, internal resistance, dielectric loss, and impedance from low to high frequencies with good workability. To provide. The ninth aspect of the present invention is to provide a solid electrolytic capacitor having high heat resistance and having excellent capacity, internal resistance, dielectric loss, and impedance from low to high frequencies.
【0009】[0009]
【課題を解決するための手段】本発明は、導電性ポリア
ニリン系粒子、ポリアミド系重合体及び溶媒を含んでな
るポリアニリン系ペーストに関する。また、本発明は、
塗布及び乾燥して得た塗膜の導電率が0.1S/cmを超え
る前記ポリアニリン系ペーストに関する。また、本発明
は、導電性ポリアニリン系粒子のドーパントが、フェノ
ールスルホン酸、フェノールジスルホン酸、ニトロベン
ゼンスルホン酸、スルホ安息香酸及びスルホコハク酸か
らなる群より選ばれる少なくとも1種である前記ポリア
ニリン系ペーストに関する。The present invention relates to a polyaniline paste comprising conductive polyaniline particles, a polyamide polymer and a solvent. Also, the present invention
The present invention relates to the polyaniline-based paste, wherein the conductivity of the coating film obtained by coating and drying exceeds 0.1 S / cm. Further, the present invention relates to the polyaniline-based paste, wherein the dopant of the conductive polyaniline-based particles is at least one selected from the group consisting of phenolsulfonic acid, phenoldisulfonic acid, nitrobenzenesulfonic acid, sulfobenzoic acid, and sulfosuccinic acid.
【0010】また、本発明は、ポリアミド系重合体のガ
ラス転移温度が130℃以上である前記ポリアニリン系
ペーストに関する。また、本発明は、ポリアミド系重合
体を構成するジアミン成分が、一般式(I)[0010] The present invention also relates to the polyaniline-based paste, wherein the polyamide-based polymer has a glass transition temperature of 130 ° C or higher. Further, in the present invention, the diamine component constituting the polyamide-based polymer is represented by the general formula (I):
【化2】 (式中、Y1は二価の炭化水素基であり、Y2は一価の炭
化水素基を表し、2個のY1は同じでも異なっていても
良く、複数個のY2は互いに同一でも異なっていても良
く、mは1以上の整数である)で表されるジアミノシロ
キサンを含む前記ポリアニリン系ペーストに関する。Embedded image (Wherein, Y 1 is a divalent hydrocarbon group, Y 2 is a monovalent hydrocarbon group, two Y 1 s may be the same or different, and a plurality of Y 2 are the same And m may be an integer of 1 or more).
【0011】また、本発明は、前記ポリアニリン系ペー
ストを用いて電解質の少なくとも一部を形成することを
特徴とする固体電解コンデンサの製造法に関する。ま
た、本発明は、弁金属上に酸化皮膜を形成した素子にペ
ルオキソ二硫酸アンモニウム水溶液とアニリン化合物及
び有機スルホン酸を含有する溶液を交互に含浸させる工
程及び前記工程の後、前記ポリアニリン系ペーストを含
浸させ、乾燥する工程を含むことを特徴とする固体電解
コンデンサの製造法に関する。また、本発明は、弁金属
上に酸化皮膜を形成した素子にペルオキソ二硫酸アンモ
ニウム水溶液とアニリン化合物及び有機スルホン酸を含
有する溶液を含浸する工程及び前記工程の後、前記ポリ
アニリン系ペーストを含浸させ、乾燥する工程を含むこ
とを特徴とする固体電解コンデンサの製造法に関する。
また、本発明は、前記固体電解コンデンサの製造法によ
って製造された固体電解コンデンサに関する。The present invention also relates to a method for manufacturing a solid electrolytic capacitor, wherein at least a part of an electrolyte is formed using the polyaniline-based paste. Also, the present invention provides a step of alternately impregnating an element having an oxide film formed on a valve metal with an aqueous solution of ammonium peroxodisulfate and a solution containing an aniline compound and an organic sulfonic acid, and impregnating the polyaniline paste after the step. And a step of drying the solid electrolytic capacitor. Further, the present invention is a step of impregnating the element having an oxide film formed on the valve metal with a solution containing an aqueous solution of ammonium peroxodisulfate and an aniline compound and an organic sulfonic acid, and after the step, impregnated with the polyaniline-based paste, The present invention relates to a method for manufacturing a solid electrolytic capacitor, which comprises a step of drying.
Further, the present invention relates to a solid electrolytic capacitor manufactured by the method for manufacturing a solid electrolytic capacitor.
【0012】[0012]
【発明の実施の形態】本発明における導電性ポリアニリ
ン系粒子は、導電性のポリアニリン化合物の粒子であ
る。導電性のポリアニリン化合物は、ポリアニリン化合
物(導電性を有しない)に酸等をドーピングして導電性
を発現させたものである。本発明におけるポリアニリン
化合物は、特に制限なく公知のものを使用しうるが、ポ
リアニリン化合物が粒子状で得られる点から、アニリン
化合物を酸性溶液中で化学酸化重合することによって得
られるものが好ましい。BEST MODE FOR CARRYING OUT THE INVENTION The conductive polyaniline-based particles in the present invention are particles of a conductive polyaniline compound. The conductive polyaniline compound is obtained by doping an acid or the like into a polyaniline compound (having no conductivity) to exhibit conductivity. As the polyaniline compound in the present invention, a known one can be used without any particular limitation. However, from the viewpoint that the polyaniline compound is obtained in the form of particles, a compound obtained by chemically oxidizing and polymerizing the aniline compound in an acidic solution is preferable.
【0013】本発明におけるアニリン化合物としては、
一般式(II)The aniline compound in the present invention includes:
General formula (II)
【化3】 (式中、複数個のRは各々独立に、アルキル基、アルケ
ニル基、アルコキシ基、シクロアルキル基、シクロアル
ケニル基又はアルカノイル基を示し、nは0〜5の整数
である)で表される化合物が挙げられ、なかでもnが0
の置換基を有さないアニリンが、得られる電解質の導電
率が高くなる点や、安価等の点で好ましい。Embedded image (Wherein, a plurality of Rs each independently represent an alkyl group, an alkenyl group, an alkoxy group, a cycloalkyl group, a cycloalkenyl group or an alkanoyl group, and n is an integer of 0 to 5) Where n is 0
The aniline having no substituent is preferable in that the obtained electrolyte has high conductivity and is inexpensive.
【0014】化学酸化重合法で用いる酸化剤としては、
ペルオキソ二硫酸アンモニウム、塩化鉄(III)、二ク
ロム酸アンモニウム、二クロム酸ナトリウム、過酸化水
素等のアニリン化合物を重合可能なものを用いることが
できるが、導電率の点から、ペルオキソ二硫酸アンモニ
ウムが好ましい。The oxidizing agent used in the chemical oxidative polymerization method includes:
Any polymerizable aniline compound such as ammonium peroxodisulfate, iron (III) chloride, ammonium dichromate, sodium dichromate, and hydrogen peroxide can be used, but ammonium peroxodisulfate is preferred from the viewpoint of conductivity. .
【0015】本発明における導電性ポリアニリン系粒子
は、例えば、上記化学酸化重合法で得た粒子状のポリア
ニリン化合物を、必要に応じて水及び/又は有機溶剤で
洗浄して精製し、必要に応じてアルカリで洗浄して一旦
脱ドープし、次にこれに酸等をドーピングすることによ
って得られる。導電性ポリアニリン系粒子の形状は、特
に制限はなく、例えば、球状、フットボール状、角柱
状、円板状、小判状、角板状等の形状が挙げられる。形
成される電解質の導電率の点から、粒子形状がフットボ
ール状や角柱状であること、あるいは円板状、小判状、
角板状等の扁平状であることが好ましい場合がある。こ
のような場合の導電性ポリアニリン系粒子のアスペクト
比(粒子の表面をa点及びb点の2点で貫く任意の直線
により規定されるa点とb点との距離(粒子内)Lab
のうち最も長い距離Lab(max)最も短い距離Lab
(min)について、Lab(max)/Lab(min)とする)は
3〜30であることが好ましく、5〜20であることが
より好ましい。The conductive polyaniline-based particles in the present invention are obtained, for example, by purifying the particulate polyaniline compound obtained by the above-mentioned chemical oxidation polymerization method by washing it with water and / or an organic solvent, if necessary. And then undoped once with alkali and then doped with an acid or the like. The shape of the conductive polyaniline-based particles is not particularly limited, and examples thereof include a spherical shape, a football shape, a prism shape, a disc shape, an oval shape, and a square plate shape. In terms of the conductivity of the formed electrolyte, the particle shape is a football shape or a prismatic shape, or a disk shape, an oval shape,
In some cases, a flat shape such as a square plate shape is preferable. In such a case, the aspect ratio of the conductive polyaniline-based particles (the distance (in the particle) between points a and b defined by an arbitrary straight line penetrating the surface of the particle at two points a and b)
Longest distance Lab (max) shortest distance Lab
((min) = ( Lab (max) / Lab (min) )) is preferably from 3 to 30, more preferably from 5 to 20.
【0016】フットボール状や角柱状あるいは円板状、
小判状、角板状等の扁平状の形状の導電性ポリアニリン
系粒子は、例えば、溶媒中に本発明における導電性ポリ
アニリン系粒子を分散したものに、粉砕用のビーズを混
ぜ、撹拌するビーズミリング法等によって溶剤との混合
物として得ることができ、これから導電性ポリアニリン
系粒子のみを取り出すには、溶媒との混合物を乾燥すれ
ばよいが、ビーズミリングにより得られた溶媒との混合
物をそのまま本発明のポリアニリン系ペーストとして用
いることもできる。この混合物中のポリアニリン化合物
粉末の濃度は濃縮又は希釈によって更に調製することが
できる。A football shape, a prism shape or a disc shape,
The conductive polyaniline-based particles having a flat shape such as an oval shape and a square plate shape are, for example, bead milling in which the conductive polyaniline-based particles of the present invention are dispersed in a solvent, and beads for grinding are mixed and stirred. It can be obtained as a mixture with a solvent by a method or the like. From this, only the conductive polyaniline-based particles can be obtained by drying the mixture with the solvent, but the mixture with the solvent obtained by bead milling is directly used in the present invention. Can be used as a polyaniline-based paste. The concentration of the polyaniline compound powder in this mixture can be further adjusted by concentration or dilution.
【0017】本発明におけるポリアミド系重合体のTg
(ガラス転移温度)は、130℃以上が好ましく、さら
に好ましくは150℃以上であり、最も好ましくは16
0℃以上である。Tgが130℃以下であると、カーボ
ンペースト焼き付け工程や銀ペースト焼き付け工程やモ
ールド時の熱によるストレスでコンデンサの特性が低下
する傾向にある。Tg of the polyamide polymer in the present invention
(Glass transition temperature) is preferably 130 ° C. or higher, more preferably 150 ° C. or higher, and most preferably 16 ° C. or higher.
0 ° C. or higher. If the Tg is 130 ° C. or lower, the characteristics of the capacitor tend to be degraded due to stress caused by heat during the carbon paste baking step, the silver paste baking step, and molding.
【0018】本発明におけるポリアミド系重合体として
は、特に制限はないが、芳香族ジカルボン酸もしくはそ
の反応性誘導体とジアミノシロキサンを必須成分とする
ジアミンとを重縮合させて得られるポリアミドシリコン
重合体又は芳香族トリカルボン酸もしくはその反応性酸
誘導体とジアミノシロキサンを必須成分とするジアミン
とを重縮合させて得られるポリアミドイミドシリコン重
合体が好ましく用いられる。The polyamide polymer in the present invention is not particularly limited, but may be a polyamide-silicon polymer obtained by polycondensing an aromatic dicarboxylic acid or a reactive derivative thereof with a diamine containing diaminosiloxane as an essential component. A polyamideimide silicon polymer obtained by polycondensing an aromatic tricarboxylic acid or a reactive acid derivative thereof with a diamine containing diaminosiloxane as an essential component is preferably used.
【0019】芳香族ジカルボン酸としては、例えば、テ
レフタル酸、イソフタル酸、4,4′−ジフェニルエー
テルジカルボン酸、4,4′−ジフェニルジカルボン
酸、4,4′−ジフェニルスルホンジカルボン酸、1,
5′−ナフタレンジカルボン酸等が挙げられる。なかで
もテレフタル酸及びイソフタル酸が入手しやすく安価で
あること、生成する重合体の溶解性の点から好ましい。
なお、芳香族ジカルボン酸の反応性誘導体としては、前
記芳香族ジカルボン酸のジハライド、例えば、ジクロラ
イドジブロマイド、ジエステル等を意味する。Examples of the aromatic dicarboxylic acid include terephthalic acid, isophthalic acid, 4,4'-diphenyl ether dicarboxylic acid, 4,4'-diphenyl dicarboxylic acid, 4,4'-diphenyl sulfone dicarboxylic acid,
5'-naphthalenedicarboxylic acid and the like. Of these, terephthalic acid and isophthalic acid are preferred in that they are easily available and inexpensive, and that the resulting polymer has solubility.
The reactive derivative of the aromatic dicarboxylic acid means a dihalide of the aromatic dicarboxylic acid, for example, dichloride dibromide, diester and the like.
【0020】また、芳香族トリカルボン酸としては、ト
リメリット酸、3,3,4′−ベンゾフェノントリカル
ボン酸、2,3,4′−ジフェニルトリカルボン酸、
2,3,6−ピリジントリカルボン酸、3,4,4′−
ベンズアニリドトリカルボン酸、1,4,5−ナフタリ
ントリカルボン酸、2′−メトキシ−3,4,4′−ジ
フェニルエーテルトリカルボン酸、2′−クロロベンズ
アニリド−3,4,4′−トリカルボン酸などを挙げる
ことができる。The aromatic tricarboxylic acids include trimellitic acid, 3,3,4'-benzophenone tricarboxylic acid, 2,3,4'-diphenyltricarboxylic acid,
2,3,6-pyridinetricarboxylic acid, 3,4,4'-
Benzanilide tricarboxylic acid, 1,4,5-naphthalene tricarboxylic acid, 2'-methoxy-3,4,4'-diphenyl ether tricarboxylic acid, 2'-chlorobenzanilide-3,4,4'-tricarboxylic acid and the like. be able to.
【0021】また、上記芳香族トリカルボン酸の反応性
誘導体とは、前記芳香族トリカルボン酸の酸無水物、ハ
ライド、エステル、アミド、アンモニウム塩等を意味す
る。これらの例としては、トリメリット酸無水物、トリ
メリット酸無水物モノクロライド、1,4−ジカルボキ
シ−3−N、N′−ジメチルカルバモイルベンゼン、
1,4−ジカルボメトキシ−3−カルボフェノキシベン
ゼン、2,6−ジカルボキシ−3−カルボメトキシピリ
ジン、1,6−ジカルボキシ−5−カルバモイルナフタ
リン、上記芳香族トリカルボン酸類とアンモニア、ジメ
チルアミン、トリエチルアミン等からなるアンモニウム
塩などが挙げられる。これらのうち、トリメリット酸無
水物、トリメリット酸無水物モノクロライドが入手容易
で廉価であるから好ましい。The reactive derivative of the aromatic tricarboxylic acid means an acid anhydride, halide, ester, amide, ammonium salt, etc. of the aromatic tricarboxylic acid. Examples of these include trimellitic anhydride, trimellitic anhydride monochloride, 1,4-dicarboxy-3-N, N′-dimethylcarbamoylbenzene,
1,4-dicarbomethoxy-3-carbophenoxybenzene, 2,6-dicarboxy-3-carbomethoxypyridine, 1,6-dicarboxy-5-carbamoylnaphthalene, the above aromatic tricarboxylic acids and ammonia, dimethylamine, Examples include ammonium salts composed of triethylamine and the like. Of these, trimellitic anhydride and trimellitic anhydride monochloride are preferred because they are easily available and inexpensive.
【0022】本発明におけるジアミン成分は、必須成分
として、一般式(I)The diamine component in the present invention is represented by the following general formula (I):
【化4】 (式中、Y1は二価の炭化水素基であり、Y2は一価の炭
化水素基を表し、2個のY1は同じでも異なっていても
良く、複数個のY2は互いに同一でも異なっていても良
く、mは1以上の整数である)で表されるジアミノシロ
キサンを含むことが好ましい。Embedded image (Wherein, Y 1 is a divalent hydrocarbon group, Y 2 is a monovalent hydrocarbon group, two Y 1 s may be the same or different, and a plurality of Y 2 are the same And m may be different, and m is an integer of 1 or more).
【0023】一般式(I)中、Y1は、好ましくは炭素
原子数1から5のアルキレン基、フェニレン基又はアル
キル置換フェニレン基であり、Y2は好ましくは炭素原
子数1から5のアルキル基もしくはアルコキシ基、フェ
ニル基又はアルキル置換フェニル基である。一般式
(I)中、mは100以下が好ましい。mが大きすぎる
と得られる重合体中のアミド結合及びイミド結合の比率
が低下し、耐熱性が低下し易くなる。一般式(I)で表
される化合物において、mが6以上のものを使用する
と、得られるポリアミドシリコン重合体又はポリアミド
イミドシリコン重合体が低弾性率を示すようになり、m
が16以上のものを使用すると該重合体が低弾性率を示
すとともに耐熱性の向上を示す。In the general formula (I), Y 1 is preferably an alkylene group having 1 to 5 carbon atoms, a phenylene group or an alkyl-substituted phenylene group, and Y 2 is preferably an alkyl group having 1 to 5 carbon atoms. Alternatively, it is an alkoxy group, a phenyl group or an alkyl-substituted phenyl group. In the general formula (I), m is preferably 100 or less. If m is too large, the ratio of the amide bond and the imide bond in the obtained polymer decreases, and the heat resistance tends to decrease. When a compound represented by the general formula (I) having m of 6 or more is used, the resulting polyamide silicone polymer or polyamide-imide silicone polymer exhibits a low elastic modulus,
When the polymer has a molecular weight of 16 or more, the polymer exhibits a low elastic modulus and an improved heat resistance.
【0024】一般式(I)で表されるジアミノシロキサ
ンとしては、例えば、The diaminosiloxane represented by the general formula (I) includes, for example,
【化5】 等の化合物があげられる。上記の式中、mは1から10
0の範囲の数である。Embedded image And the like. In the above formula, m is 1 to 10
A number in the range 0.
【0025】ジアミノシロキサンのうち、上記一般式
(I)中、mが1のもの、平均10のもの、平均20の
もの、平均38のもの及び平均50のものは、各々、L
P−7100、X−22−161AS、X−22−16
1A、X−22−161B及びX−22−161−C
(いずれも信越化学工業(株)商品名)として市販されて
いる。これらのジアミノシロキサンを1種又は2種以上
用いることができる。Among the diaminosiloxanes, in the above general formula (I), those wherein m is 1, those having an average of 10, those having an average of 20, those having an average of 38 and those having an average of 50 are each represented by L
P-7100, X-22-161AS, X-22-16
1A, X-22-161B and X-22-161-C
(All are trade names of Shin-Etsu Chemical Co., Ltd.). One or more of these diaminosiloxanes can be used.
【0026】ジアミノシロキサンは、分子量の低下を効
果的に防ぐことができ、また、テトラヒドロフラン、ジ
オキサン、ジエチレングリコールジメチルエーテル、ト
リエチレングリコールジメチルエーテル、テトラエチレ
ングリコールジメチルエーテル等のエーテル化合物、及
びシクロヘキサン、4−メチルシクロヘキサン等の脂環
式ケトン化合物などの汎用低沸点有機溶剤への溶解性が
良好である点から、ジアミン成分の総量に対して0.1
〜40モル%使用されるのが好ましく、密着性、耐熱
性、分子量、弾性率の点からジアミノシロキサンはジア
ミンの総量に対して0.2〜15モル%使用されるのが
より好ましい。Diaminosiloxane can effectively prevent a decrease in molecular weight, and can be an ether compound such as tetrahydrofuran, dioxane, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, and cyclohexane, 4-methylcyclohexane. The solubility in general-purpose low-boiling organic solvents such as alicyclic ketone compounds is good.
The diaminosiloxane is preferably used in an amount of 0.2 to 15 mol% based on the total amount of the diamine from the viewpoints of adhesion, heat resistance, molecular weight, and elastic modulus.
【0027】ジアミノシロキサンと併用しうるその他の
ジアミン成分としては、特に制限はないが、芳香族ジア
ミンを使用することが耐熱性の点で好ましく、例えば、
2,2−ビス[4−(4−アミノフェノキシ)フェニ
ル]プロパン、2,2−ビス[3−メチル−4−(4−
アミノフェノキシ)フェニル]プロパン、2,2−ビス
[4−(4?アミノフェノキシ)フェニル]ブタン、
2,2−ビス[3−メチル−4−(4−アミノフェノキ
シ)フェニル]ブタン、2,2−ビス[3,5−ジメチ
ル−4−(4−アミノフェノキシ)フェニル]ブタン、
2,2−ビス[3,5−ジブロモ−4−(4−アミノフ
ェノキシ)フェニル]ブタン、1,1,1,3,3,3
−ヘキサフルオロ−2,2−ビス[3−メチル−4−
(4−アミノフェノキシ)フェニル]プロパン、1,1
−ビス[4−(4−アミノフェノキシ)フェニル]シク
ロヘキサン、1,1−ビス[4−(4−アミノフェノキ
シ)フェニル]シクロペンタン、ビス[4−(4−アミ
ノフェノキシ)フェニル]スルホン、ビス[4−(4−
アミノフェノキシ)フェニル]エーテル、ビス[4−
(3−アミノフェノキシ)フェニル]スルホン、4,
4′−カルボニルビス(p−フェニレンオキシ)ジアニ
リン、4,4′−ビス(4−アミノフェノキシ)ビフェ
ニル、1,3−ビス(3−アミノフェノキシ)ベンゼ
ン、1,3−ビス(4−アミノフェノキシ)ベンゼン、
1,4−ビス(4−アミノフェノキシ)ベンゼン、1,
3−ビス(3−アミノフェノキシ)ベンゼン、4,4′
−[1,3−フェニレンビス(1−メチルエチリデ
ン)]ビスアニリン、4,4′−[1,4−フェニレン
ビス(1−メチルエチリデン)]ビスアニリン、3,
3′−[1,3−フェニレンビス(1−メチルエチリデ
ン)]ビスアニリン、4,4′−ジアミノジフェニルエ
ーテル、4,4′−ジアミノジフェニルメタン、4,
4′−ジアミノ−3,3′,5,5′−テトラメチルジ
フェニルメタン、4,4′−ジアミノ−3,3′,5,
5′−テトラエチルジフェニルエーテル、2,2−
[4,4′−ジアミノ−3,3′,5,5′−テトラメ
チルジフェニル]プロパン、メタフェニレンジアミン、
パラフェニレンジアミン、3,3′−ジアミノジフェニ
ルスルホン等が挙げられ、これらの化合物を使用すると
耐熱性と低弾性率という特性を同時に向上させることが
できる。これらのなかでは2,2−ビス[4−(4−ア
ミノフェノキシ)フェニル]プロパンが特に好ましい。The other diamine component which can be used in combination with the diaminosiloxane is not particularly limited, but it is preferable to use an aromatic diamine from the viewpoint of heat resistance.
2,2-bis [4- (4-aminophenoxy) phenyl] propane, 2,2-bis [3-methyl-4- (4-
Aminophenoxy) phenyl] propane, 2,2-bis [4- (4? Aminophenoxy) phenyl] butane,
2,2-bis [3-methyl-4- (4-aminophenoxy) phenyl] butane, 2,2-bis [3,5-dimethyl-4- (4-aminophenoxy) phenyl] butane,
2,2-bis [3,5-dibromo-4- (4-aminophenoxy) phenyl] butane, 1,1,1,3,3,3
-Hexafluoro-2,2-bis [3-methyl-4-
(4-aminophenoxy) phenyl] propane, 1,1
-Bis [4- (4-aminophenoxy) phenyl] cyclohexane, 1,1-bis [4- (4-aminophenoxy) phenyl] cyclopentane, bis [4- (4-aminophenoxy) phenyl] sulfone, bis [ 4- (4-
Aminophenoxy) phenyl] ether, bis [4-
(3-aminophenoxy) phenyl] sulfone, 4,
4'-carbonylbis (p-phenyleneoxy) dianiline, 4,4'-bis (4-aminophenoxy) biphenyl, 1,3-bis (3-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) )benzene,
1,4-bis (4-aminophenoxy) benzene, 1,
3-bis (3-aminophenoxy) benzene, 4,4 '
-[1,3-phenylenebis (1-methylethylidene)] bisaniline, 4,4 '-[1,4-phenylenebis (1-methylethylidene)] bisaniline, 3,
3 '-[1,3-phenylenebis (1-methylethylidene)] bisaniline, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane, 4,
4'-diamino-3,3 ', 5,5'-tetramethyldiphenylmethane, 4,4'-diamino-3,3', 5
5'-tetraethyldiphenyl ether, 2,2-
[4,4'-diamino-3,3 ', 5,5'-tetramethyldiphenyl] propane, metaphenylenediamine,
Examples thereof include paraphenylenediamine and 3,3'-diaminodiphenylsulfone. When these compounds are used, the characteristics of heat resistance and low elastic modulus can be simultaneously improved. Of these, 2,2-bis [4- (4-aminophenoxy) phenyl] propane is particularly preferred.
【0028】さらに、上記芳香族ジアミンを除くジアミ
ンとしては、例えば、ピペラジン、ヘキサメチレンジア
ミン、ヘプタメチレンジアミン、テトラメチレンジアミ
ン、p−キシリレンジアミン、m−キシリレンジアミ
ン、3−メチルヘプタメチレンジアミン等の脂肪族ジア
ミンを併用することもできる。これら芳香族ジアミン
は、耐熱性向上のために併用する事が好ましく、ジアミ
ンの総量に対して0.1〜99.9モル%となるように
使用するのが好ましく、さらに好ましくは0.2〜90
モル%である。Examples of the diamine other than the aromatic diamine include piperazine, hexamethylenediamine, heptamethylenediamine, tetramethylenediamine, p-xylylenediamine, m-xylylenediamine, and 3-methylheptamethylenediamine. May be used in combination. These aromatic diamines are preferably used in combination for improving heat resistance, and are preferably used in an amount of 0.1 to 99.9 mol%, more preferably 0.2 to 9 mol%, based on the total amount of the diamine. 90
Mol%.
【0029】本発明において、芳香族ジカルボン酸又は
その反応性誘導体は、ジアミンの総量100モル%に対
して総量で80〜120モル%使用するのが好ましく、
95〜105モル%使用するのがより好ましい。これら
をジアミンの総量に対して、総量で等モル使用したとき
に最も高分子量のものが得られる。ジアミンに対して、
芳香族ジカルボン酸又はその反応性誘導体が多すぎても
少なすぎても、分子量が低下して機械的強度及び耐熱性
等が低下する傾向がある。In the present invention, the aromatic dicarboxylic acid or its reactive derivative is preferably used in a total amount of 80 to 120 mol% with respect to a total amount of 100 mol% of the diamine.
It is more preferable to use 95 to 105 mol%. When these are used in equimolar amount with respect to the total amount of the diamine, the highest molecular weight is obtained. For diamines,
If the amount of the aromatic dicarboxylic acid or its reactive derivative is too large or too small, the molecular weight tends to decrease, and the mechanical strength and heat resistance tend to decrease.
【0030】上記のような芳香族ジカルボン酸又はその
反応性誘導体とジアミンとを重縮合反応させて得られる
ポリアミド重合体は、ジメチルホルムアミド0.2重量
%溶液における30℃での還元粘度が0.2〜2.0dl
/gであることが好ましい。この還元粘度が小さすぎる
と、機械的強度及び耐熱性等が低下する傾向があり、大
きすぎると溶剤への溶解性が低下する傾向がある。The polyamide polymer obtained by the polycondensation reaction of the above aromatic dicarboxylic acid or its reactive derivative with a diamine has a reduced viscosity of 0.3% at 30 ° C. in a 0.2% by weight solution of dimethylformamide. 2-2.0dl
/ g is preferred. If the reduced viscosity is too small, mechanical strength and heat resistance tend to decrease, and if too large, the solubility in a solvent tends to decrease.
【0031】本発明における溶媒としては、例えば、
水、ヘキサン、シクロヘキサン、ヘプタン、オクタン、
トルエン、キシレン、メタノール、エタノール、プロパ
ノール、イソプロパノール、エチレングリコール、ジエ
チレングリコール、トリエチレングリコール、プロピレ
ングリコール、ジプロピレングリコール、トリプロピレ
ングリコール、メチルセロソルブ、エチルセロソルブ、
ブチルセルソルブ、メチルカルビトール、エチルカルビ
トール、ブチルカルビトール、トリエチレングリコール
モノメチルエーテル、トリエチレングリコールモノブチ
ルエーテル、プロピレングリコールモノメチルエーテ
ル、プロピレングリコールモノプロピルエーテル、ジプ
ロピレングリコールモノメチルエーテル、エチレングリ
コールジメチルエーテル、エチレングリコールジエチル
エーテル、ジエチレングリコールジエチルエーテル、ジ
エチレングリコールエチルメチルエーテル、ジグライ
ム、トリグライム、テトラエチレングリコールジメチル
エーテル、テトラヒドロフラン、ジメチルエーテル、ト
リオキサン、ジオキサン、アセトン、メチルエチルケト
ン、酢酸メチル、酢酸エチル、エチレンカーボネート、
エチレングリコールモノエチルエーテルアセテート、エ
チレングリコールモノメチルエーテルアセテート、ジエ
チレングリコールジアセテート、N,N−ジメチルホル
ムアミド、ジメチルスルホキシド、ニトロベンゼン、N
−メチル−2−ピロリドン、2−シクロヘキサノン、4
−メチル−2−シクロヘキサノン、アセトニトリル、ピ
コリン、スルホラン等が挙げられる。これらは複数種を
組み合わせて用いることも可能である。As the solvent in the present invention, for example,
Water, hexane, cyclohexane, heptane, octane,
Toluene, xylene, methanol, ethanol, propanol, isopropanol, ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, methyl cellosolve, ethyl cellosolve,
Butyl cellosolve, methyl carbitol, ethyl carbitol, butyl carbitol, triethylene glycol monomethyl ether, triethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monopropyl ether, dipropylene glycol monomethyl ether, ethylene glycol dimethyl ether, ethylene Glycol diethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, diglyme, triglyme, tetraethylene glycol dimethyl ether, tetrahydrofuran, dimethyl ether, trioxane, dioxane, acetone, methyl ethyl ketone, methyl acetate, ethyl acetate, ethylene carbonate,
Ethylene glycol monoethyl ether acetate, ethylene glycol monomethyl ether acetate, diethylene glycol diacetate, N, N-dimethylformamide, dimethyl sulfoxide, nitrobenzene, N
-Methyl-2-pyrrolidone, 2-cyclohexanone, 4
-Methyl-2-cyclohexanone, acetonitrile, picoline, sulfolane and the like. These can be used in combination of a plurality of types.
【0032】また、溶媒に酸を含ませると導電性ポリア
ニリン系粒子からドーパントが脱離しにくくなり、また
導電性ポリアニリン系粒子の結着性が良好となるため好
ましい。この場合の酸としては、本発明における導電性
ポリアニリン系粒子のドーパントとして好適に用いられ
るもの(後述)が好ましい。溶媒に含ませる酸の配合量
は1〜25重量%であることが好ましく、2〜20重量
%であることがより好ましく、3〜10重量%であるこ
とが特に好ましい。Further, it is preferable to include an acid in the solvent because the dopant is less likely to be eliminated from the conductive polyaniline-based particles and the binding property of the conductive polyaniline-based particles is improved. As the acid in this case, those preferably used as a dopant for the conductive polyaniline-based particles in the present invention (described later) are preferable. The amount of the acid contained in the solvent is preferably 1 to 25% by weight, more preferably 2 to 20% by weight, and particularly preferably 3 to 10% by weight.
【0033】本発明のポリアニリン系ペーストは、導電
性ポリアニリン系粒子と溶媒とを混合し撹拌することで
調製でき、また前記のように特定形状の導電性ポリアニ
リン系粒子を得る際に用いた溶媒をそのまま利用して調
製してもよい。The polyaniline-based paste of the present invention can be prepared by mixing and stirring the conductive polyaniline-based particles and a solvent, and using the solvent used for obtaining the conductive polyaniline-based particles having a specific shape as described above. It may be prepared as it is.
【0034】本発明のポリアニリン系ペーストは、これ
をガラス板等の基板に塗布し、乾燥した皮膜の導電率
が、0.1S/cmを超えるものであることが好ましく、
0.3S/cmを超えるものであることがより好ましい。導
電率が0.1S/cm未満の場合、固体電解コンデンサの内
部抵抗が高くなる傾向がある。本発明で達成可能な導電
率は1000S/cm程度である。The polyaniline-based paste of the present invention is preferably applied to a substrate such as a glass plate and dried to have a conductivity of more than 0.1 S / cm.
More preferably, it exceeds 0.3 S / cm. When the conductivity is less than 0.1 S / cm, the internal resistance of the solid electrolytic capacitor tends to increase. The conductivity achievable by the present invention is on the order of 1000 S / cm.
【0035】本発明における導電性ポリアニリン系粒子
のドーパントとして用いる酸としては、特に制限なく公
知のものを使用できるが、得られる導電性ポリアニリン
系粒子の耐熱性や、導電性の点から、有機スルホン酸が
好ましい。有機スルホン酸としては、耐熱性や、導電性
の点から、ベンゼンスルホン酸、トルエンスルホン酸、
n−ヘキサンスルホン酸、n−オクチルスルホン酸、ド
デシルスルホン酸、セチルスルホン酸、4−ドデシルベ
ンゼンスルホン酸、カンファースルホン酸、ポリ(ビニ
ル)スルホン酸、ジノニルナフタレンスルホン酸、ナフ
タレンスルホン酸、p−クロロベンゼンスルホン酸、フ
ェノールスルホン酸、フェノールジスルホン酸、トリク
ロロベンゼンスルホン酸、4−ニトロトルエン−2−ス
ルホン酸、1−オクタンスルホン酸、スルホン化ポリス
チレン、スルホン化ポリエチレン、スルホ安息香酸、3
−ニトロベンゼンスルホン酸、4−オクチルベンゼンス
ルホン酸、2−メチル−5−イソプロピルベンゼンスル
ホン酸、スルホコハク酸が好ましく、これらの内、フェ
ノールスルホン酸、フェノールジスルホン酸、スルホ安
息香酸、スルホコハク酸、ニトロベンゼンスルホン酸が
より好ましい。また、これら有機スルホン酸に硫酸を併
用するのも好ましい方法である。As the acid used as a dopant for the conductive polyaniline-based particles in the present invention, known acids can be used without any particular limitation. However, from the viewpoint of heat resistance and conductivity of the obtained conductive polyaniline-based particles, organic sulfones are used. Acids are preferred. As organic sulfonic acids, from the viewpoint of heat resistance and conductivity, benzenesulfonic acid, toluenesulfonic acid,
n-hexanesulfonic acid, n-octylsulfonic acid, dodecylsulfonic acid, cetylsulfonic acid, 4-dodecylbenzenesulfonic acid, camphorsulfonic acid, poly (vinyl) sulfonic acid, dinonylnaphthalenesulfonic acid, naphthalenesulfonic acid, p- Chlorobenzenesulfonic acid, phenolsulfonic acid, phenoldisulfonic acid, trichlorobenzenesulfonic acid, 4-nitrotoluene-2-sulfonic acid, 1-octanesulfonic acid, sulfonated polystyrene, sulfonated polyethylene, sulfobenzoic acid,
-Nitrobenzenesulfonic acid, 4-octylbenzenesulfonic acid, 2-methyl-5-isopropylbenzenesulfonic acid, and sulfosuccinic acid are preferred. Of these, phenolsulfonic acid, phenoldisulfonic acid, sulfobenzoic acid, sulfosuccinic acid, and nitrobenzenesulfonic acid Is more preferred. It is also a preferred method to use sulfuric acid in combination with these organic sulfonic acids.
【0036】本発明のポリアニリン系ペースト中の各成
分の割合は、導電性ポリアニリン系粒子100重量部に
対して、ポリアミド重合体を1〜100重量部、溶媒を
100〜4000重量部とすることが好ましい。ポリア
ミド重合体が10重量部未満では、密着性、成膜性を向
上させる効果が低い傾向があり、100重量部を超える
と導電率が低下する傾向がある。溶媒が100重量部未
満では、粘度が高く、導電性が劣る傾向があり、400
0重量部を超えると所定の膜厚とするのに浸漬、乾燥の
回数が増えて作業性が劣る傾向がある。The proportion of each component in the polyaniline paste of the present invention is preferably 1 to 100 parts by weight of the polyamide polymer and 100 to 4000 parts by weight of the solvent with respect to 100 parts by weight of the conductive polyaniline particles. preferable. When the amount of the polyamide polymer is less than 10 parts by weight, the effect of improving the adhesion and film-forming properties tends to be low, and when it exceeds 100 parts by weight, the conductivity tends to decrease. If the solvent is less than 100 parts by weight, the viscosity tends to be high, and the conductivity tends to be poor.
If the amount exceeds 0 parts by weight, the number of times of immersion and drying is increased to obtain a predetermined film thickness, and the workability tends to be poor.
【0037】本発明のポリアニリン系ペーストにより形
成される膜の膜厚は2〜50μmとすることが好まし
く、4〜30μmとすることがより好ましく、6〜20
μmとすることが特に好ましい。膜厚が2μm未満で
は、コンデンサの漏れ電流が大きくなる傾向があり、5
0μmを超えるとコンデンサの内部抵抗が高くなる傾向
がある。The thickness of the film formed by the polyaniline paste of the present invention is preferably 2 to 50 μm, more preferably 4 to 30 μm, and more preferably 6 to 20 μm.
It is particularly preferable to set it to μm. If the film thickness is less than 2 μm, the leakage current of the capacitor tends to increase,
If it exceeds 0 μm, the internal resistance of the capacitor tends to increase.
【0038】本発明の固定電解コンデンサに用いる弁金
属は、アルミニウム、タンタル、ニオブ、バナジウム、
チタン、ジルコニウム等が挙げられるが、誘電率や酸化
皮膜の形成し易さ等の点から、拡面化したアルミニウム
箔またはタンタル焼結体が好ましい。本発明における弁
金属表面に酸化皮膜を形成する方法は、通常、電解コン
デンサ製造時に使用される方法であれば特に制限無く用
いることができ、例えば、エッチングによって拡面した
アルミニウム箔をアジピン酸アンモニウム水溶液中で電
圧をかけることによって酸化皮膜を形成する、タンタル
微粉末焼結体ペレットを硝酸水溶液中で電圧をかけるこ
とによって酸化皮膜を形成する等の公知方法が用いられ
る。The valve metal used for the fixed electrolytic capacitor of the present invention is aluminum, tantalum, niobium, vanadium,
Titanium, zirconium and the like can be mentioned, but an expanded aluminum foil or a tantalum sintered body is preferable from the viewpoint of the dielectric constant and the ease of forming an oxide film. The method of forming an oxide film on the valve metal surface in the present invention can be used without any particular limitation as long as it is a method usually used in the production of electrolytic capacitors. For example, an aluminum foil expanded by etching is treated with an aqueous solution of ammonium adipate Known methods such as forming an oxide film by applying a voltage in the inside and forming an oxide film by applying a voltage to a tantalum fine powder sintered body pellet in an aqueous nitric acid solution are used.
【0039】本発明の固体電解コンデンサは、ポリアニ
リン系ペーストを用いて電解質の少なくとも一部を形成
して製造される。本発明の固体電解コンデンサの製造に
ついて図1を用いて説明を加える。図1はタンタルを弁
金属にした本発明の固体電解コンデンサの一例を示した
断面図であり、タンタル微粉末を焼結してなりリード端
子1を備えたタンタルペレット2の表面に酸化皮膜3を
形成し、この上にポリアニリン化合物からなる電解質4
を形成し、次いでカーボンペースト層5、銀ペースト層
6を順次形成して、この銀ペースト層6に、導電ペース
トを用いて陰極リード7を接続し、また、リード端子1
を陽極リード9に接続し、次いでエポキシ樹脂等の封止
材8でモールド外装し、タンタルを弁金属にした本発明
の固体電解コンデンサを得ることができる。The solid electrolytic capacitor of the present invention is manufactured by forming at least a part of an electrolyte using a polyaniline-based paste. Manufacturing of the solid electrolytic capacitor of the present invention will be described with reference to FIG. FIG. 1 is a cross-sectional view showing an example of a solid electrolytic capacitor of the present invention in which tantalum is used as a valve metal, and an oxide film 3 is formed on the surface of a tantalum pellet 2 provided with lead terminals 1 by sintering fine tantalum powder. And an electrolyte 4 comprising a polyaniline compound formed thereon.
Is formed, then a carbon paste layer 5 and a silver paste layer 6 are sequentially formed, and a cathode lead 7 is connected to the silver paste layer 6 by using a conductive paste.
Is connected to the anode lead 9 and then molded and covered with a sealing material 8 such as an epoxy resin to obtain a solid electrolytic capacitor of the present invention using tantalum as a valve metal.
【0040】本発明における電解質とは、電解コンデン
サの陽極に用いる金属(弁金属)表面に誘電体とする薄
い酸化皮膜を形成した後に、誘電体皮膜と陰極との電気
的なコンタクトを得るための導電性の物質のことをい
う。電解質の形成は、例えば(1)アニリン化合物の化
学酸化重合で電解質を形成する方法、(2)ポリアニリ
ン化合物をこれを溶解可能な溶媒に溶解した溶液を塗布
又は含浸させ、必要に応じて乾燥することで電解質を形
成する方法、(3)本発明の電解質形成用ポリアニリン
系ペーストを塗布又は含浸させ、必要に応じて乾燥する
ことで電解質を形成する方法等を、上記(3)の方法を
必ず含んで適宜組み合わせて行うことができる。もちろ
ん上記(3)の方法のみでも行えるが若干皮膜成膜性が
悪い。The electrolyte in the present invention is used for forming a thin oxide film as a dielectric on the surface of a metal (valve metal) used as an anode of an electrolytic capacitor, and then obtaining an electrical contact between the dielectric film and the cathode. Refers to a conductive substance. The electrolyte is formed by, for example, (1) a method of forming an electrolyte by chemical oxidation polymerization of an aniline compound, and (2) coating or impregnating a solution in which a polyaniline compound is dissolved in a solvent capable of dissolving the same, and drying as necessary. (3) A method of forming an electrolyte by applying or impregnating the polyaniline-based paste for forming an electrolyte of the present invention and drying it as necessary, etc. It can be carried out in appropriate combinations. Of course, the method (3) alone can be used, but the film-forming property is slightly poor.
【0041】上記(1)の方法及び(3)の方法を組み
合わせる場合、例えば、弁金属上に酸化皮膜を形成した
素子にペルオキソ二硫酸アンモニウム水溶液とアニリン
化合物及び有機スルホン酸を含有する溶液を、交互に含
浸させる(2液法)工程及び前記工程の後、本発明のポ
リアニリン系ペーストを含浸させ、乾燥する工程を、少
なくとも行うことにより電解質を形成し固体電解コンデ
ンサを製造することができる。また、例えば、弁金属上
に酸化皮膜を形成した素子にペルオキソ二硫酸アンモニ
ウム水溶液、アニリン化合物及び有機スルホン酸を含有
する溶液を含浸させる(1液法)工程及び前記工程の
後、本発明のポリアニリン系ペーストを含浸させ、乾燥
する工程を、少なくとも行うことにより電解質を形成し
固体電解コンデンサを製造することができる。When the methods (1) and (3) are combined, for example, an element having an oxide film formed on a valve metal is alternately mixed with an aqueous solution of ammonium peroxodisulfate and a solution containing an aniline compound and an organic sulfonic acid. After the step of impregnating the polyaniline-based paste of the present invention and the step of impregnating with the polyaniline-based paste of the present invention and then drying, an electrolyte is formed and a solid electrolytic capacitor can be manufactured. Further, for example, after the step of impregnating an element having an oxide film formed on a valve metal with an aqueous solution of ammonium peroxodisulfate, a solution containing an aniline compound and an organic sulfonic acid (one-part method), and after the step, the polyaniline-based compound of the present invention is obtained. By performing at least the step of impregnating and drying the paste, an electrolyte is formed and a solid electrolytic capacitor can be manufactured.
【0042】上記2液法で用いるペルオキソ二硫酸アン
モニウム水溶液は、ペルオキソ二硫酸アンモニウムをイ
オン交換水に溶解して得ることができる。この水溶液は
常温以上で保管すると、ペルオキソ二硫酸アンモニウム
が分解して酸化力が衰える傾向があるので、使用直前に
調製するかもしくは冷蔵保管したものを用いるのが好ま
しい。このペルオキソ二硫酸アンモニウム水溶液中のペ
ルオキソ二硫酸アンモニウムの配合量は、用いるアニリ
ン化合物及び有機スルホン酸を含有する溶液中のアニリ
ン化合物の配合量に依存し、アニリン化合物及び有機ス
ルホン酸を含有する溶液中のアニリン化合物の配合量に
対してモル濃度比で0.4〜1.4倍とすることが好ま
しく、0.6〜1.2倍とすることがより好ましく、
0.7〜1.0倍とすることが特に好ましい。0.4倍
未満又は1.4倍を超えると得られる電解質の導電率が
低くなり、コンデンサの内部抵抗が高くなる傾向があ
る。The aqueous solution of ammonium peroxodisulfate used in the two-liquid method can be obtained by dissolving ammonium peroxodisulfate in ion-exchanged water. When this aqueous solution is stored at room temperature or higher, ammonium peroxodisulfate tends to decompose and the oxidizing power tends to decrease. Therefore, it is preferable to use one prepared immediately before use or stored in a refrigerator. The amount of ammonium peroxodisulfate in the aqueous ammonium peroxodisulfate solution depends on the amount of the aniline compound in the solution containing the aniline compound and the organic sulfonic acid used, and the amount of aniline in the solution containing the aniline compound and the organic sulfonic acid. The molar concentration ratio is preferably 0.4 to 1.4 times, more preferably 0.6 to 1.2 times, relative to the compounding amount of the compound,
It is particularly preferable that the ratio be 0.7 to 1.0 times. If it is less than 0.4 times or more than 1.4 times, the conductivity of the obtained electrolyte tends to decrease, and the internal resistance of the capacitor tends to increase.
【0043】上記2液法で用いるアニリン化合物及び有
機スルホン酸を含有する溶液中の有機スルホン酸は、特
に制限なく公知のものを使用できるが、ポリアニリン系
ペーストにより得られる塗膜の耐熱性や、導電性の点
で、前記ポリアニリン系ペーストの説明でポリアニリン
系粒子のドーパントの有機スルホン酸として例示したも
のと同様のものが好ましい。このアニリン化合物及び有
機スルホン酸を含有する溶液は、アニリン化合物及び有
機スルホン酸を溶媒に溶解して得られる。溶媒は水又は
水と有機溶剤の混合溶媒が得られる電解質の導電性の点
で好ましい。水より沸点の低い溶剤、例えば、メタノー
ル、エタノール、プロパノール、アセトン、アセトニト
リル等を10〜75容積%、好ましくは25〜60容積
%含んだ水と有機溶剤の混合溶媒を用いると、水だけの
場合よりアニリン化合物の溶解性が向上する上、電解質
の形成性も向上するので望ましい。As the organic sulfonic acid in the solution containing the aniline compound and the organic sulfonic acid used in the above two-part method, any known organic sulfonic acid can be used without any particular limitation. In terms of conductivity, the same ones as those exemplified as the organic sulfonic acid as the dopant for the polyaniline-based particles in the description of the polyaniline-based paste are preferable. The solution containing the aniline compound and the organic sulfonic acid is obtained by dissolving the aniline compound and the organic sulfonic acid in a solvent. The solvent is preferred in view of the conductivity of the electrolyte from which water or a mixed solvent of water and an organic solvent is obtained. When using a mixed solvent of water and an organic solvent containing 10 to 75% by volume, preferably 25 to 60% by volume of a solvent having a boiling point lower than that of water, for example, methanol, ethanol, propanol, acetone, acetonitrile, etc. This is desirable because the solubility of the aniline compound is improved and the formability of the electrolyte is also improved.
【0044】このアニリン化合物及び有機スルホン酸を
含有する溶液中のアニリン化合物の配合量は、1〜12
重量%とすることが好ましく、1.5〜10重量%とす
ることがより好ましく、2〜9重量%とすることが特に
好ましい。1重量%未満では、溶液の含浸を多数回繰り
返す必要が生じ、工程が長くなったり、電解質の外層部
の結着性が悪くなる傾向がある。また、12重量%を超
えると得られる電解質の導電率が低くなり、コンデンサ
の内部抵抗が高くなる傾向がある。The amount of the aniline compound in the solution containing the aniline compound and the organic sulfonic acid is 1 to 12%.
%, More preferably 1.5 to 10% by weight, and particularly preferably 2 to 9% by weight. If the amount is less than 1% by weight, it is necessary to repeat the impregnation of the solution many times, which tends to lengthen the process and deteriorate the binding property of the outer layer portion of the electrolyte. On the other hand, if it exceeds 12% by weight, the conductivity of the obtained electrolyte tends to decrease, and the internal resistance of the capacitor tends to increase.
【0045】このアニリン化合物及び有機スルホン酸を
含有する溶液中の有機スルホン酸の配合量はアニリン化
合物に依存し、アニリン化合物の配合量に対してモル濃
度比で0.2〜1.5倍とすることが好ましく、0.2
5〜1.2倍とすることがより好ましく、0.3〜1.
0倍としることが特に好ましい。0.2倍未満又は1.
5倍を超えると得られる電解質の導電率が低くなり、コ
ンデンサの内部抵抗が高くなる傾向がある。The compounding amount of the organic sulfonic acid in the solution containing the aniline compound and the organic sulfonic acid depends on the aniline compound, and is 0.2 to 1.5 times the molar amount of the aniline compound. Preferably, 0.2
It is more preferably 5 to 1.2 times, and 0.3 to 1.
It is particularly preferable to make it 0 times. Less than 0.2 times or 1.
If it exceeds 5 times, the conductivity of the obtained electrolyte tends to decrease, and the internal resistance of the capacitor tends to increase.
【0046】上記2液法におけるペルオキソ二硫酸アン
モニウム水溶液とアニリン化合物及び有機スルホン酸を
含有する溶液を交互に含浸する工程では、ペルオキソ二
硫酸アンモニウム水溶液を含浸した後必要に応じて乾燥
し、その後アニリン化合物及び有機スルホン酸を含有す
る溶液を含浸し、酸化皮膜上でアニリン化合物を化学重
合した後必要に応じて乾燥する。順番を逆にしてアニリ
ン化合物及び有機スルホン酸を含有する溶液を先に含浸
させてもよい。In the step of alternately impregnating the aqueous solution of ammonium peroxodisulfate and the solution containing the aniline compound and the organic sulfonic acid in the above two-liquid method, impregnating with the aqueous solution of ammonium peroxodisulfate, drying if necessary, and then drying the aniline compound and A solution containing an organic sulfonic acid is impregnated, and the aniline compound is chemically polymerized on the oxide film, and then dried if necessary. The order may be reversed, and the solution containing the aniline compound and the organic sulfonic acid may be impregnated first.
【0047】上記1液法におけるペルオキソ二硫酸アン
モニウム、アニリン化合物及び有機スルホン酸を含有す
る溶液を含浸させる工程では、例えば、ペルオキソ二硫
酸アンモニウム水溶液(2液法で説明したのと同様のも
のが使用できる)と、アニリン化合物及び有機スルホン
酸を含有する溶液(2液法で説明したのと同様のものが
使用できる)とを混合後、未反応の段階で素子に含浸さ
せ、酸化皮膜上でアニリン化合物を化学重合させた後、
適宜乾燥することができる。ここで、ペルオキソ二硫酸
アンモニウム水溶液とアニリン化合物及び有機スルホン
酸を含有する溶液を混合後、含浸させる工程においては
溶液を混合する前に液温を−5〜−20℃に冷却してお
くと、溶液を混合後、含浸前にポリアニリン化合物が溶
液中に析出してしまうのを抑制できるので好ましい。溶
液混合後直ちに素子に含浸させ、酸化皮膜上でアニリン
化合物を化学重合させた後、適宜乾燥することができ
る。In the step of impregnating a solution containing ammonium peroxodisulfate, an aniline compound and an organic sulfonic acid in the one-liquid method, for example, an aqueous solution of ammonium peroxodisulfate (the same one as described in the two-liquid method can be used) And a solution containing an aniline compound and an organic sulfonic acid (the same ones as described in the two-part method can be used), and then impregnated in the element at an unreacted stage. After chemical polymerization,
It can be dried as appropriate. Here, after mixing the aqueous solution of ammonium peroxodisulfate with the solution containing the aniline compound and the organic sulfonic acid, in the step of impregnating, the solution temperature is cooled to -5 to -20 ° C before mixing the solution. After mixing, it is preferable because the polyaniline compound can be prevented from being precipitated in the solution before impregnation. Immediately after the solution is mixed, the device is impregnated, and after the aniline compound is chemically polymerized on the oxide film, it can be dried as appropriate.
【0048】本発明の固体電解コンデンサの電解質を形
成するにあたって好ましい態様は、弁金属上に酸化皮膜
を形成した素子に、ペルオキソ二硫酸アンモニウム水溶
液とアニリン化合物及び有機スルホン酸を含有する溶液
を交互に含浸させ必要に応じて乾燥するか、あるいはペ
ルオキソ二硫酸アンモニウム水溶液と、アニリン化合物
及び有機スルホン酸を含有する溶液とを混合後、この混
合液に含浸させ必要に応じて乾燥する操作を10〜30
回程度繰り返して酸化皮膜に直接接する電解質の内層部
を形成しておき、次いで固体電解コンデンサの電解質形
成用ポリアニリン系ペーストを含浸させ、乾燥して電解
質の外層部を形成し、その上から再びペルオキソ二硫酸
アンモニウム水溶液とアニリン化合物及び有機スルホン
酸を含有する溶液を交互に含浸させ必要に応じて乾燥す
るか、あるいはペルオキソ二硫酸アンモニウム水溶液と
アニリン化合物及び有機スルホン酸を含有する溶液とを
混合後、この混合液に含浸させ必要に応じて乾燥する操
作を1〜5回程度行って電解質の最外層部を形成する態
様である。In a preferred embodiment for forming the electrolyte of the solid electrolytic capacitor of the present invention, an element having an oxide film formed on a valve metal is alternately impregnated with an aqueous solution of ammonium peroxodisulfate and a solution containing an aniline compound and an organic sulfonic acid. After drying, if necessary, or after mixing an aqueous solution of ammonium peroxodisulfate with a solution containing an aniline compound and an organic sulfonic acid, the mixture is impregnated with and dried if necessary.
Repeat the procedure about once to form the inner layer of the electrolyte that is in direct contact with the oxide film, then impregnate the solid electrolyte capacitor with a polyaniline-based paste for forming the electrolyte, and dry to form the outer layer of the electrolyte. The aqueous solution of ammonium disulfate and the solution containing the aniline compound and the organic sulfonic acid are alternately impregnated and dried as necessary, or the aqueous solution of ammonium peroxodisulfate and the solution containing the aniline compound and the organic sulfonic acid are mixed. In this embodiment, the outermost layer of the electrolyte is formed by performing the operation of impregnating with the liquid and drying as necessary about 1 to 5 times.
【0049】タンタル電解コンデンサのように多孔質焼
結体からなる素子では、多孔質焼結体の細孔内部の電解
質(すなわち内層部の電解質)を前記1液法又は2液法
で形成するようにすることが好ましい(本発明の固体電
解コンデンサの電解質形成用ポリアニリン系ペースト
は、導電性ポリアニリン系粒子が細孔内部に入っていき
にくく、複雑な表面への追従性が不足する傾向があり、
電解質の内層部を形成するのには必ずしも適さない)。
内層部の電解質を前記1液法及び2液法で形成し、その
上(外層部)に電解質を形成する際に本発明の固体電解
コンデンサの電解質形成用ポリアニリン系ペーストを使
用するのが好ましい。In a device made of a porous sintered body such as a tantalum electrolytic capacitor, the electrolyte inside the pores of the porous sintered body (that is, the electrolyte in the inner layer) is formed by the one-liquid method or the two-liquid method. (The polyaniline-based paste for forming an electrolyte of the solid electrolytic capacitor of the present invention has a tendency that conductive polyaniline-based particles are less likely to enter the inside of the pores, and the ability to follow a complicated surface tends to be insufficient.
It is not necessarily suitable for forming the inner layer of the electrolyte).
It is preferable to use the polyaniline-based paste for forming the electrolyte of the solid electrolytic capacitor of the present invention when forming the electrolyte in the inner layer by the one-liquid method and the two-liquid method and forming the electrolyte thereon (outer layer).
【0050】本発明における固体電解コンデンサの電解
質形成用ポリアニリン系ペーストは比較的少ない含浸操
作回数で、充分な厚みの電解質を形成できるので、工程
短縮に寄与する。また固体電解コンデンサの電解質形成
用ポリアニリン系ペーストから得られる電解質は高純度
のポリアニリン化合物とすることができるため、コンデ
ンサの内部抵抗を低減できる。なお、固体電解コンデン
サの電解質形成用ポリアニリン系ペーストで電解質の外
層部を形成した後、前記1液法及び2液法により電解質
の外層部を形成すると、結着性がより向上し、導電性ポ
リアニリン系粒子間の抵抗が低くできる。The polyaniline paste for forming an electrolyte of a solid electrolytic capacitor according to the present invention can form an electrolyte having a sufficient thickness with a relatively small number of impregnation operations, thereby contributing to shortening of the process. Further, since the electrolyte obtained from the polyaniline-based paste for forming the electrolyte of the solid electrolytic capacitor can be a high-purity polyaniline compound, the internal resistance of the capacitor can be reduced. When the outer layer of the electrolyte is formed with the polyaniline paste for forming the electrolyte of the solid electrolytic capacitor and then the outer layer of the electrolyte is formed by the one-liquid method and the two-liquid method, the binding property is further improved and the conductive polyaniline is improved. Resistance between system particles can be reduced.
【0051】[0051]
【実施例】以下、本発明を実施例により説明する。 合成例1 120mlのアニリン(和光純薬工業(株)製、試薬)と1
50mlの35重量%塩酸(和光純薬工業(株)製、試薬)
と120mlの蒸留水を3リットルの三角フラスコにい
れ、0℃に冷やした。0℃に保ったまま、三角フラスコ
内の溶液を撹拌しながら、300mlの蒸留水に溶かした
138gのペルオキソ二硫酸アンモニウム(和光純薬工
業(株)製、試薬)を2時間かけて加えてアニリンの重合
を行った。ペルオキソ二硫酸アンモニウムを加え終った
後、撹拌したまま3時間0℃に保ち続けた。ポリアニリ
ンは粉末状となるので、これをろ過、蒸留水で充分洗浄
した後メタノール洗浄、エーテル洗浄を行った。充分に
洗浄した粉末状のポリアニリンを次に真空乾燥機中で減
圧下50℃で乾燥した。次に、前記乾燥した粉末状のポ
リアニリン100gを10リットルの3重量%アンモニ
ア水に入れて、2時間撹拌し、得られた塩基性としたポ
リアニリン粉末をろ過後、充分に蒸留水洗浄、メタノー
ル洗浄、エーテル洗浄を行い、次いで、真空乾燥機中で
減圧下50℃で乾燥した(収率は36重量%)。The present invention will be described below with reference to examples. Synthesis Example 1 120 ml of aniline (reagent, manufactured by Wako Pure Chemical Industries, Ltd.) and 1
50 ml of 35% by weight hydrochloric acid (reagent, manufactured by Wako Pure Chemical Industries, Ltd.)
And 120 ml of distilled water were placed in a 3 liter Erlenmeyer flask and cooled to 0 ° C. While maintaining the temperature at 0 ° C., while stirring the solution in the Erlenmeyer flask, 138 g of ammonium peroxodisulfate (reagent, manufactured by Wako Pure Chemical Industries, Ltd.) dissolved in 300 ml of distilled water was added over 2 hours to add aniline. Polymerization was performed. After the addition of ammonium peroxodisulfate, the mixture was kept at 0 ° C. for 3 hours with stirring. Since polyaniline is in a powder form, it is filtered, washed sufficiently with distilled water, and then washed with methanol and ether. The thoroughly washed powdered polyaniline was then dried in a vacuum dryer at 50 ° C. under reduced pressure. Next, 100 g of the dried powdered polyaniline was placed in 10 liters of 3% by weight ammonia water and stirred for 2 hours. The obtained basic polyaniline powder was filtered, and then sufficiently washed with distilled water and methanol. After washing with ether, the resultant was dried at 50 ° C. under reduced pressure in a vacuum dryer (yield: 36% by weight).
【0052】合成例2 合成例1で得られた塩基性としたポリアニリン10gを
p−フェノールスルホン酸(日本化学産業(株)製)の5
0重量%水溶液100gに分散し、撹拌しながら温度を
65℃に8時間保った。こうして得られた導電性ポリア
ニリン系粒子をろ過後、充分にアセトンで洗浄を行って
過剰なp−フェノールスルホン酸を除き、次いで、真空
乾燥機中で減圧下50℃で乾燥し導電性ポリアニリン系
粒子1を得た。Synthesis Example 2 10 g of the basic polyaniline obtained in Synthesis Example 1 was added to p-phenolsulfonic acid (manufactured by Nippon Chemical Industry Co., Ltd.).
The dispersion was dispersed in 100 g of a 0% by weight aqueous solution, and the temperature was maintained at 65 ° C. for 8 hours with stirring. After filtering the thus obtained conductive polyaniline-based particles, they are sufficiently washed with acetone to remove excess p-phenolsulfonic acid, and then dried at 50 ° C. under reduced pressure in a vacuum drier to obtain conductive polyaniline-based particles. 1 was obtained.
【0053】合成例3 合成例1で得られた塩基性ポリアニリン10gをスルホ
コハク酸(Aldrich社製)の50重量%水溶液100g
に分散し、撹拌しながら温度を65℃に8時間保った。
こうして得られた導電性ポリアニリン系粒子をろ過後、
充分にアセトンで洗浄を行って過剰なスルホコハク酸を
除き、次いで、真空乾燥機中で減圧下50℃で乾燥し導
電性ポリアニリン系粒子2を得た。Synthesis Example 3 10 g of the basic polyaniline obtained in Synthesis Example 1 was added to 100 g of a 50% by weight aqueous solution of sulfosuccinic acid (manufactured by Aldrich).
And maintained at 65 ° C. for 8 hours with stirring.
After filtering the conductive polyaniline-based particles thus obtained,
Excessive sulfosuccinic acid was removed by washing sufficiently with acetone, and then dried at 50 ° C. under reduced pressure in a vacuum dryer to obtain conductive polyaniline-based particles 2.
【0054】合成例4 撹拌装置、窒素導入管、温度計及び環流管を備えた四つ
口フラスコに窒素雰囲気下に2,2−ビス[4−(4−
アミノフェノキシ)フェニル]プロパン(和光純薬工業
(株)製、試薬)65.6g(0.16モル)と下記式
(III)Synthesis Example 4 In a four-necked flask equipped with a stirrer, a nitrogen inlet tube, a thermometer and a reflux tube, 2,2-bis [4- (4-
Aminophenoxy) phenyl] propane (Wako Pure Chemical Industries)
65.6 g (0.16 mol) of the following formula (III)
【化6】 のジアミノシロキサン36g(0.04モル)(モル比
で80モル%/20モル%)を入れ、ジエチレングリコ
ールジメチルエーテル335gに溶解した。Embedded image Of diaminosiloxane (0.04 mol) (80 mol% / 20 mol% in molar ratio) was dissolved in 335 g of diethylene glycol dimethyl ether.
【0055】この溶液を−10℃に保ち、イソフタル酸
クロリド(Aldrich社製、試薬)40.6g(0.2モ
ル)を−10〜−5℃に制御しながら加えた。その後、
プロピレンオキシド23.2gを添加し、ジエチレング
リコールジメチルエーテル96gを追加し室温で3時間
攪拌を続けた。反応液を大量のメタノール(和光純薬工
業(株)製、試薬)に注ぎ、ポリマを単離し、乾燥した
後、再びN、N−ジメチルホルムアミドに溶解し、これ
をメタノール中に投入してポリアミドシリコン重合体を
精製した。本重合体のTgは180℃であった。The solution was maintained at -10 ° C, and 40.6 g (0.2 mol) of isophthalic chloride (manufactured by Aldrich) was added while controlling the temperature at -10 to -5 ° C. afterwards,
23.2 g of propylene oxide was added, 96 g of diethylene glycol dimethyl ether was added, and stirring was continued at room temperature for 3 hours. The reaction solution was poured into a large amount of methanol (reagent, manufactured by Wako Pure Chemical Industries, Ltd.), the polymer was isolated, dried, and then dissolved again in N, N-dimethylformamide. The silicon polymer was purified. The Tg of this polymer was 180 ° C.
【0056】合成例5 撹拌装置、窒素導入管、温度計及び環流管を備えた四つ
口フラスコに窒素雰囲気下に2,2−ビス[4−(4−
アミノフェノキシ)フェニル]プロパン(和光純薬工業
(株)製、試薬)174.3g(0.425モル)と下記
式(IV)Synthesis Example 5 In a four-necked flask equipped with a stirrer, a nitrogen inlet tube, a thermometer and a reflux tube, 2,2-bis [4- (4-
Aminophenoxy) phenyl] propane (Wako Pure Chemical Industries)
174.3 g (0.425 mol) of the following formula (IV)
【化7】 のジアミノシロキサン225g(0.075モル)(モ
ル比で85モル%/15モル%)を入れ、ジエチレング
リコールジメチルエーテル1177gに溶解した。Embedded image Of diaminosiloxane (0.075 mol) (85 mol% / 15 mol% in molar ratio) was dissolved in 1177 g of diethylene glycol dimethyl ether.
【0057】この溶液を−10℃に保ち、トリメリット
酸モノクロライド(Aldrich社製、試薬)105.3g
(0.5モル)を−10〜−5℃に制御しながら加え
た。その後、プロピレンオキシド87gを添加し、室温
で3時間攪拌を続け、反応液の粘度が上昇し、液が透明
になったところで、ジエチレングリコールジメチルエー
テル841gを追加し室温で1時間攪拌を続けたのち、
無水酢酸128g及びピリジン64gを加え、60℃で
一昼夜攪拌を続けた。反応液を大量のヘキサン/メタノ
ール=1/1(重量比、いづれも和光純薬工業(株)製、
試薬)に注ぎ、ポリマを単離し、乾燥した後、N、Nジ
メチルホルムアミドに溶解し、これをメタノール中に投
入してポリアミドイミドシリコン重合体を精製した。本
重合体のTgは170℃であった。The solution was kept at −10 ° C., and 105.3 g of trimellitic acid monochloride (reagent, manufactured by Aldrich) was used.
(0.5 mol) was added while controlling to -10 to -5 ° C. Thereafter, 87 g of propylene oxide was added, and stirring was continued at room temperature for 3 hours. When the viscosity of the reaction solution increased and the solution became transparent, 841 g of diethylene glycol dimethyl ether was added, and stirring was continued at room temperature for 1 hour.
128 g of acetic anhydride and 64 g of pyridine were added, and stirring was continued at 60 ° C. for 24 hours. A large amount of hexane / methanol = 1/1 (weight ratio, each product manufactured by Wako Pure Chemical Industries, Ltd.)
After the polymer was isolated and dried, the polymer was dissolved in N, N dimethylformamide and poured into methanol to purify the polyamide-imide silicon polymer. The Tg of this polymer was 170 ° C.
【0058】合成例6 合成例1で得られた塩基性ポリアニリン10gを塩酸
(和光純薬工業(株)製、試薬)の20重量%水溶液10
0gに分散し、撹拌しながら温度を40℃に8時間保っ
た。こうして得られた導電性ポリアニリン系粒子をろ過
後、充分にアセトンで洗浄を行って過剰な塩酸を除き、
次いで、真空乾燥機中で減圧下50℃で乾燥し導電性ポ
リアニリン系粒子3を得た。Synthesis Example 6 10 g of the basic polyaniline obtained in Synthesis Example 1 was added to a 20% by weight aqueous solution of hydrochloric acid (reagent, manufactured by Wako Pure Chemical Industries, Ltd.).
0 g and kept at 40 ° C. for 8 hours with stirring. After filtering the conductive polyaniline-based particles thus obtained, thoroughly washing with acetone to remove excess hydrochloric acid,
Next, the resultant was dried at 50 ° C. under reduced pressure in a vacuum dryer to obtain conductive polyaniline-based particles 3.
【0059】実施例1 合成例2で得た導電性ポリアニリン系粒子1を10g、
エタノール(和光純薬工業(株)製、試薬)40g、イオ
ン交換水54g、65重量%p−フェノールスルホン酸
水溶液(日本化学産業(株)製)6gをホモミキサで1時
間分散混合した後、合成例4で得たポリアミドシリコン
重合体3gにN−メチルピロリドン7gを加えて溶解さ
せたポリアミドシリコン重合体溶液を加え、再度ホモミ
キサで1時間分散混合し、ポリアニリン系ペースト1を
得た。このポリアニリン系ペースト1をガラス板に塗布
し、120℃で1時間乾燥して得られた皮膜の導電率
は、5S/cmであった。Example 1 10 g of the conductive polyaniline-based particles 1 obtained in Synthesis Example 2
40 g of ethanol (reagent, manufactured by Wako Pure Chemical Industries, Ltd.), 54 g of ion-exchanged water, and 6 g of a 65% by weight aqueous solution of p-phenolsulfonic acid (manufactured by Nippon Chemical Industry Co., Ltd.) were dispersed and mixed with a homomixer for 1 hour and then synthesized A polyamide silicon polymer solution in which 7 g of N-methylpyrrolidone was added and dissolved in 3 g of the polyamide silicon polymer obtained in Example 4 was added, and the mixture was again dispersed and mixed with a homomixer for 1 hour to obtain a polyaniline paste 1. This polyaniline-based paste 1 was applied to a glass plate and dried at 120 ° C. for 1 hour. The conductivity of the film obtained was 5 S / cm.
【0060】また、ペルオキソ二硫酸アンモニウム(和
光純薬工業(株)製、試薬)10gをイオン交換水90g
に溶解してペルオキソ二硫酸アンモニウム水溶液1を得
た。次に、30分間窒素でバブリングして得た脱気した
アニリン(和光純薬工業(株)製、試薬)4g、脱気した
イオン交換水46g、脱気したエタノール(和光純薬工
業(株)、試薬を脱気)46g、及びフェノールスルホン
酸(和光純薬工業(株)製、試薬)4gを混合し、アニリ
ン及び有機スルホン酸を含有する溶液1を得た。Further, 10 g of ammonium peroxodisulfate (reagent, manufactured by Wako Pure Chemical Industries, Ltd.) was added to 90 g of ion-exchanged water.
To give an aqueous solution of ammonium peroxodisulfate 1. Next, 4 g of degassed aniline (reagent, manufactured by Wako Pure Chemical Industries, Ltd.) obtained by bubbling with nitrogen for 30 minutes, 46 g of degassed ion-exchanged water, and degassed ethanol (Wako Pure Chemical Industries, Ltd.) , Degassed reagent) and 4 g of phenolsulfonic acid (reagent, manufactured by Wako Pure Chemical Industries, Ltd.) to obtain a solution 1 containing aniline and organic sulfonic acid.
【0061】硝酸水溶液中26Vで酸化皮膜を形成した
長さ3.2mm、奥行き1.6mm、高さ3.8mmの角柱状
のタンタル微粉末焼結体ペレット(設計容量150μ
F)に、ペルオキソ二硫酸アンモニウム水溶液1を含浸
し、熱風乾燥機で50℃で20分乾燥し、アニリン及び
有機スルホン酸を含有する溶液1を含浸し、室温で10
分放置した後、熱風乾燥機で80℃で20分乾燥した。
この2つの液への含浸、乾燥工程を交互に15回ずつ繰
り返して、ポリアニリンからなる電解質の内層部を形成
した。A 3.2 mm long, 1.6 mm deep, 3.8 mm high prismatic tantalum fine powder sintered pellet (having a designed capacity of 150 μm) having an oxide film formed at 26 V in an aqueous nitric acid solution.
F) was impregnated with an aqueous solution of ammonium peroxodisulfate 1, dried with a hot air drier at 50 ° C. for 20 minutes, and impregnated with a solution 1 containing aniline and an organic sulfonic acid.
After standing for minutes, it was dried with a hot air drier at 80 ° C. for 20 minutes.
These two liquid impregnation and drying steps were alternately repeated 15 times each to form an inner layer portion of an electrolyte made of polyaniline.
【0062】これに、ポリアニリン系ペースト1を含浸
後120℃で1h乾燥してポリアニリンからなる電解質
の外層部を形成した。次に、ペルオキソ二硫酸アンモニ
ウム水溶液1を含浸し、熱風乾燥機で50℃で20分乾
燥し、アニリン及び有機スルホン酸を含有する溶液1を
含浸し、室温で10分放置した後、熱風乾燥機で80℃
で20分乾燥した。この2つの液への含浸、乾燥工程を
交互に2回ずつ繰り返し、導電性ポリアニリンからなる
電解質の最外層部を形成した。更にカーポンペースト
層、銀ペース卜層を順次形成して、この銀ペースト層
に、銀ペーストを用いて陰極リードを接続し、封止材で
モールド外装し、タンタルを弁金属にした本発明の固体
電解コンデンサを得た。得られた固体電解コンデンサの
電気的特性及び電解質の形成に要した含浸回数を表1に
示す。The polyaniline-based paste 1 was impregnated and dried at 120 ° C. for 1 hour to form an outer layer of an electrolyte made of polyaniline. Next, impregnated with an aqueous solution of ammonium peroxodisulfate 1, dried at 50 ° C. for 20 minutes with a hot air drier, impregnated with a solution 1 containing aniline and an organic sulfonic acid, allowed to stand at room temperature for 10 minutes, and then dried with a hot air drier. 80 ℃
For 20 minutes. The two liquid impregnation and drying steps were alternately repeated twice each to form an outermost layer of an electrolyte made of conductive polyaniline. Further, a carbon paste layer and a silver paste layer are sequentially formed, a cathode lead is connected to the silver paste layer using a silver paste, the package is molded with a sealing material, and tantalum is used as a valve metal. An electrolytic capacitor was obtained. Table 1 shows the electrical characteristics of the obtained solid electrolytic capacitor and the number of times of impregnation required to form the electrolyte.
【0063】実施例2 合成例3で得た導電性ポリアニリン系粒子2を5g、ジ
グライム(和光純薬工業(株)製、試薬)を55g、合成
例4で得たポリアミドシリコン重合体1gをホモミキサ
で1時間分散混合して、ポリアニリン系ペースト2を得
た。このポリアニリン系ペースト2をガラス板に塗布
し、120℃で1時間乾燥して得られた皮膜の導電率
は、7S/cmであった。Example 2 5 g of the conductive polyaniline-based particles 2 obtained in Synthesis Example 3, 55 g of diglyme (reagent, manufactured by Wako Pure Chemical Industries, Ltd.), and 1 g of the polyamide silicon polymer obtained in Synthesis Example 4 were homomixed. For 1 hour to obtain a polyaniline-based paste 2. The polyaniline-based paste 2 was applied to a glass plate and dried at 120 ° C. for 1 hour. The conductivity of the film obtained was 7 S / cm.
【0064】また、ペルオキソ二硫酸アンモニウム(和
光純薬工業(株)製、試薬)4.5gをイオン交換水1
0.5gに溶解してペルオキソ二硫酸アンモニウム水溶
液2を得た。次に、30分間窒素でバブリングして得た
脱気したアニリン(和光純薬工業(株)製、試薬)1.8
g、脱気したイオン交換水15.5g、脱気したエタノ
ール(和光純薬工業(株)製、試薬を脱気)22g、及び
70重量%スルホコハク酸(Aldrich社製)4.5gを
混合し、アニリン及び有機スルホン酸を含有する溶液2
を得た。Further, 4.5 g of ammonium peroxodisulfate (reagent, manufactured by Wako Pure Chemical Industries, Ltd.) was added to 1 part of deionized water.
It was dissolved in 0.5 g to obtain an aqueous solution of ammonium peroxodisulfate 2. Next, degassed aniline (reagent, manufactured by Wako Pure Chemical Industries, Ltd.) obtained by bubbling with nitrogen for 30 minutes 1.8.
g, 15.5 g of degassed ion-exchanged water, 22 g of degassed ethanol (manufactured by Wako Pure Chemical Industries, Ltd., degassing the reagent), and 4.5 g of 70% by weight sulfosuccinic acid (manufactured by Aldrich) were mixed. 2 containing aniline and organic sulfonic acid
I got
【0065】ペルオキソ二硫酸アンモニウム水溶液2と
アニリン及び有機スルホン酸を含有する溶液2を0〜1
℃に冷却した上で混合し、よく振り混ぜた。この混合液
を直ちに実施例1と同様のタンタル微粉末焼結体ペレッ
ト(設計容量150μF)に含浸し、40℃の乾燥機中
で10分放置した後、熱風乾燥機で120℃で20分乾
燥した。この含浸工程を25回繰り返して、ポリアニリ
ンからなる電解質の内層部を形成した。以下ポリアニリ
ン系ペースト2を用いた点以外は実施例1と同様にして
固体電解コンデンサを得た。得られた固体電解コンデン
サの電気的特性及び電解質の形成に要した含浸回数を表
1に示す。The aqueous solution 2 containing ammonium peroxodisulfate 2 and the solution 2 containing aniline and organic sulfonic acid were
After cooling to ℃, the mixture was mixed and shaken well. This mixed solution was immediately impregnated into the same sintered tantalum powder pellet (design capacity: 150 μF) as in Example 1, left in a dryer at 40 ° C. for 10 minutes, and then dried at 120 ° C. for 20 minutes with a hot air dryer. did. This impregnation step was repeated 25 times to form an inner layer portion of an electrolyte made of polyaniline. Hereinafter, a solid electrolytic capacitor was obtained in the same manner as in Example 1 except that the polyaniline-based paste 2 was used. Table 1 shows the electrical characteristics of the obtained solid electrolytic capacitor and the number of times of impregnation required to form the electrolyte.
【0066】比較例1 本発明のポリアニリン系ペースト1を使用しない点以外
は実施例1と同様にして、タンタルを弁金属とする固体
電解コンデンサを作製した。ポリアニリンからなる電解
質層を充分な厚みで形成するのにペルオキソ二硫酸アン
モニウム水溶液1とアニリン及び有機スルホン酸を含有
する溶液1の含浸工程はそれぞれ30回繰り返す必要が
あった。得られた固体電解コンデンサの電気的特性及び
電解質の形成に要した含浸回数を表1に示す。Comparative Example 1 A solid electrolytic capacitor using tantalum as a valve metal was produced in the same manner as in Example 1 except that the polyaniline paste 1 of the present invention was not used. In order to form an electrolyte layer made of polyaniline with a sufficient thickness, the impregnation step of the aqueous solution 1 containing ammonium peroxodisulfate and the solution 1 containing aniline and organic sulfonic acid had to be repeated 30 times. Table 1 shows the electrical characteristics of the obtained solid electrolytic capacitor and the number of times of impregnation required to form the electrolyte.
【0067】実施例3 合成例2で得た導電性ポリアニリン系粒子1を5g、ジ
グライム(和光純薬工業(株)製、試薬)を55ml、1φ
のジルコニアビーズを嵩体積で150mlそれぞれセパラ
ブルフラスコに入れ、3時間撹拌して取り出し、60メ
ッシュのふるいを通してジルコニアビーズを除き、導電
性ポリアニリン系粒子と溶剤の混合物を得た。混合物の
一部を100℃で1時間真空乾燥し、導電性ポリアニリ
ン系粒子の形状をSEMで観察し、粒子5個について平
均をとったアスペクト比が15の小判状の扁平形状であ
ることを確認した。この混合物5gに対し、合成例5で
得たポリアミドイミドシリコン重合体0.1gを加えて
混合し、ポリアニリン系ペースト3を得た。このポリア
ニリン系ペースト3をガラス板に塗布し、120℃で1
時間乾燥して得られた皮膜の導電率は、0.4S/cmであ
った。Example 3 5 g of the conductive polyaniline-based particles 1 obtained in Synthesis Example 2 and 55 ml of diglyme (reagent, manufactured by Wako Pure Chemical Industries, Ltd.)
Of zirconia beads was placed in a separable flask in a bulk volume of 150 ml each, stirred for 3 hours and taken out. The zirconia beads were removed through a 60-mesh sieve to obtain a mixture of conductive polyaniline-based particles and a solvent. A part of the mixture was vacuum-dried at 100 ° C. for 1 hour, and the shape of the conductive polyaniline-based particles was observed with an SEM to confirm that the average ratio of the five particles was an oval flat shape having an aspect ratio of 15. did. To 5 g of this mixture, 0.1 g of the polyamideimide silicon polymer obtained in Synthesis Example 5 was added and mixed to obtain a polyaniline-based paste 3. This polyaniline-based paste 3 is applied to a glass plate,
The conductivity of the film obtained after drying for a time was 0.4 S / cm.
【0068】このポリアニリン系ペースト3をポリアニ
リン系ペースト1に替えて使用した以外は実施例1と同
様にして固体電解コンデンサを得た。得られた固体電解
コンデンサの電気的特性及び電解質の形成に要した含浸
回数を表1に示す。A solid electrolytic capacitor was obtained in the same manner as in Example 1 except that the polyaniline-based paste 3 was used in place of the polyaniline-based paste 1. Table 1 shows the electrical characteristics of the obtained solid electrolytic capacitor and the number of times of impregnation required to form the electrolyte.
【0069】比較例2 実施例1のポリアニリン系ペーストのポリアミド重合体
の代わりに、エチルアククリレート/ブチルアクリレー
ト=80/20(モル比)の共重合樹脂(Tg60℃)
を用いた以外は実施例1と同様にして固体電解コンデン
サを得た。得られた固体電解コンデンサの電気的特性及
び電解質の形成に要した含浸回数を表1に示す。Comparative Example 2 A copolymer resin (Tg 60 ° C.) of ethyl acrylate / butyl acrylate = 80/20 (molar ratio) instead of the polyamide polymer of the polyaniline paste of Example 1
A solid electrolytic capacitor was obtained in the same manner as in Example 1 except for using. Table 1 shows the electrical characteristics of the obtained solid electrolytic capacitor and the number of times of impregnation required to form the electrolyte.
【0070】比較例3 実施例3のポリアニリン系ペーストのバインダ樹脂であ
るポリアミドイミドシリコン重合体を除いた(バインダ
樹脂を添加しない)以外は実施例1と同様にして固体電
解コンデンサを得たが、コンデンサがショートしたので
評価しなかった。Comparative Example 3 A solid electrolytic capacitor was obtained in the same manner as in Example 1 except that the polyamideimide silicon polymer as the binder resin of the polyaniline-based paste of Example 3 was not used (no binder resin was added). Not evaluated because the capacitor was short-circuited.
【0071】比較例4 合成例6で得た導電性ポリアニリン系粒子3を10g、
ジグライム(和光純薬工業(株)製、試薬)100gをホ
モミキサで1時間分散混合した後、合成例4で得たポリ
アミドシリコン重合体3gにN−メチルピロリドン7g
を加えて溶解させたポリアミドシリコン重合体溶液を加
え、再度ホモミキサで1時間分散混合し、ポリアニリン
系ペースト4を得た。このポリアニリン系ペースト4を
ガラス板に塗布し、120℃で1時間乾燥して得られた
皮膜の導電率は、3S/cmであった。Comparative Example 4 10 g of the conductive polyaniline-based particles 3 obtained in Synthesis Example 6
After 100 g of diglyme (reagent, manufactured by Wako Pure Chemical Industries, Ltd.) was dispersed and mixed for 1 hour with a homomixer, 7 g of N-methylpyrrolidone was added to 3 g of the polyamide silicon polymer obtained in Synthesis Example 4.
Was added and dissolved, and the mixture was again dispersed and mixed for 1 hour with a homomixer to obtain a polyaniline paste 4. The polyaniline-based paste 4 was applied to a glass plate and dried at 120 ° C. for 1 hour, and the conductivity of the film obtained was 3 S / cm.
【0072】以下、実施例と同様にして比較例4による
固体電解コンデンサを得た。得られた固体電解コンデン
サの電気的特性及び電解質の形成に要した含浸回数を表
1に示す。Thereafter, a solid electrolytic capacitor according to Comparative Example 4 was obtained in the same manner as in Example. Table 1 shows the electrical characteristics of the obtained solid electrolytic capacitor and the number of times of impregnation required to form the electrolyte.
【0073】[0073]
【表1】 [Table 1]
【0074】表1から明らかなように、実施例1〜3に
よる固体電解コンデンサは低周波特性及び高周波特性の
いずれも優れ、比較例1による固体電解コンデンサに比
べて少ない含浸回数で電解質層が形成でき。比較例2に
よる固体電解コンデンサに比べて100kHzでの内部抵
抗が優れており、比較例3の固体電解コンデンサよりも
ショート不良を起こしにくく、比較例4の固体電解コン
デンサよりも100kHzでの内部抵抗が優れている。As is clear from Table 1, the solid electrolytic capacitors according to Examples 1 to 3 are excellent in both low-frequency characteristics and high-frequency characteristics, and the electrolyte layer is formed with a smaller number of impregnation times than the solid electrolytic capacitor according to Comparative Example 1. Can. The internal resistance at 100 kHz is superior to the solid electrolytic capacitor according to Comparative Example 2, and is less likely to cause a short circuit failure than the solid electrolytic capacitor of Comparative Example 3. The internal resistance at 100 kHz is lower than the solid electrolytic capacitor of Comparative Example 4. Are better.
【0075】[0075]
【発明の効果】請求項1及び2記載のポリアニリン系ペ
ーストは、塗布乾燥しただけで導電性を有する膜が形成
でき、この膜は、例えば、電解質等の用途に好適であ
り、低周波数から高周波数まで容量、内部抵抗、誘電損
失、インピーダンスが優れ、工程上のストレスに強く、
耐熱性に優れた固体電解コンデンサを短い工程で作製で
きるものである。請求項3記載のポリアニリン系ペース
トは、請求項1又は2記載の発明の効果に加え、さらに
耐熱性に優れた固体電解コンデンサを作製できるもので
ある。According to the first and second aspects of the present invention, the polyaniline-based paste can form a conductive film only by coating and drying. This film is suitable for applications such as electrolytes, and has a low frequency to a high frequency. Excellent capacity, internal resistance, dielectric loss, impedance up to frequency, strong in process stress,
A solid electrolytic capacitor having excellent heat resistance can be manufactured in a short process. The polyaniline-based paste according to claim 3 can produce a solid electrolytic capacitor having excellent heat resistance in addition to the effects of the invention according to claim 1 or 2.
【0076】請求項4記載のポリアニリン系ペースト
は、請求項1、2又は3記載の発明の効果に加え、さら
にカーボンペーストや銀ペーストを形成した時に特性の
低下がなく、モールド等の工程上のストレスに対して特
性の低下がない耐熱性に優れた固体電解コンデンサを短
い工程で作製できるものである。請求項5記載の発明
は、請求項1、2、3又は4記載の発明の効果に加え、
さらに樹脂モールドやはんだリフロー等のポリアニリン
電解質層にストレスがかかる行程の前後で特性低下がな
い固体電解コンデンサを短い工程で作製できるものであ
る。The polyaniline-based paste according to the fourth aspect has the effect of the invention according to the first, second or third aspect, and furthermore, there is no deterioration in characteristics when a carbon paste or a silver paste is formed, and the polyaniline-based paste can be used in a process such as molding. A solid electrolytic capacitor having excellent heat resistance without deterioration in characteristics against stress can be manufactured in a short process. The invention described in claim 5 provides the effect of the invention described in claim 1, 2, 3, or 4,
Furthermore, a solid electrolytic capacitor having no characteristic deterioration before and after a process of applying stress to a polyaniline electrolyte layer such as a resin mold or solder reflow can be manufactured in a short process.
【0077】請求項6記載の固体電解コンデンサの製造
法は、耐熱性が高く、しかも低周波数から高周波数まで
容量、内部抵抗、誘電損失、インピーダンスが優れた固
体電解コンデンサを製造できるものである。請求項7記
載の固体電解コンデンサの製造法は、耐熱性が高く、し
かも低周波数から高周波数まで容量、内部抵抗、誘電損
失、インピーダンスが優れた固体電解コンデンサを簡便
に短い工程で製造できるものである。請求項8記載の固
体電解コンデンサの製造法は、耐熱性が高く、しかも低
周波数から高周波数まで容量、内部抵抗、誘電損失、イ
ンピーダンスが優れた固体電解コンデンサを簡便に作業
性よく製造できるものである。請求項9記載の固体電解
コンデンサは、耐熱性が高く、しかも低周波数から高周
波数まで容量、内部抵抗、誘電損失、インピーダンスが
優れたものである。The method for manufacturing a solid electrolytic capacitor according to the sixth aspect is capable of manufacturing a solid electrolytic capacitor having high heat resistance and excellent capacity, internal resistance, dielectric loss, and impedance from low to high frequencies. The method for manufacturing a solid electrolytic capacitor according to claim 7 is a method for easily manufacturing a solid electrolytic capacitor having high heat resistance and excellent capacity, internal resistance, dielectric loss, and impedance from low to high frequencies in a short process. is there. The method for producing a solid electrolytic capacitor according to claim 8 is capable of easily producing a solid electrolytic capacitor having high heat resistance and excellent in capacity, internal resistance, dielectric loss, and impedance from low to high frequencies with good workability. is there. The solid electrolytic capacitor according to the ninth aspect has high heat resistance, and is excellent in capacity, internal resistance, dielectric loss, and impedance from low to high frequencies.
【図1】本発明の固体電解コンデンサの一例の断面図で
ある。FIG. 1 is a sectional view of an example of the solid electrolytic capacitor of the present invention.
1 リード端子 2 タンタルペレット 3 酸化皮膜 4 電解質 5 カーボンペースト層 6 銀ペースト層 7 陰極リード 8 封止材 9 陽極リード DESCRIPTION OF SYMBOLS 1 Lead terminal 2 Tantalum pellet 3 Oxide film 4 Electrolyte 5 Carbon paste layer 6 Silver paste layer 7 Cathode lead 8 Sealing material 9 Anode lead
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01B 1/12 H01B 1/12 G H01G 9/028 H01M 10/40 B H01M 10/40 C09D 5/24 // C09D 5/24 177/06 177/06 179/00 179/00 H01G 9/02 331H 331G (72)発明者 佐々木 晶市 茨城県日立市東町四丁目13番1号 日立化 成工業株式会社総合研究所内 (72)発明者 ラノウ パトリス 茨城県日立市東町四丁目13番1号 日立化 成工業株式会社総合研究所内 (72)発明者 吉川 徹 千葉県市原市五井南海岸14番地 日立化成 工業株式会社五井事業所内 Fターム(参考) 4J001 DC10 EB36 EB37 EB46 EB55 EB57 EB60 EB65 EB67 EC07 EC08 EC09 EC29 EC45 EC46 EC47 EC48 EC65 EC66 EC67 EC70 EC75 EC81 EE18A FB03 FC06 JA07 JB02 JB07 JC06 4J002 CL07W CM05X EV236 FD11X FD116 GQ00 HA08 4J038 DH021 DJ002 DL081 HA156 JA02 JA05 JA19 JA20 JA26 JA27 JA33 JA56 JA70 JA74 JB12 JB18 JB21 JB27 JC01 JC11 JC14 JC18 KA06 KA12 KA20 MA07 MA08 MA10 MA13 NA20 PB09 PC02 5G301 DA28 DA51 DD01 DE01 5H029 AJ00 AK11 AL06 AM16 CJ02 CJ13 CJ23 EJ12 EJ13 HJ02──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01B 1/12 H01B 1/12 G H01G 9/028 H01M 10/40 B H01M 10/40 C09D 5/24 / / C09D 5/24 177/06 177/06 179/00 179/00 H01G 9/02 331H 331G (72) Inventor Akira Sasaki 4-3-1-1, Higashicho, Hitachi City, Ibaraki Prefecture Hitachi Chemical Co., Ltd. In-house (72) Inventor Lanou Patrice 4-3-1, Higashicho, Hitachi, Ibaraki Pref.Hitachi Chemical Industry Co., Ltd. (72) Inventor Toru Yoshikawa 14 Goi-minamikaigan, Ichihara-shi, Chiba Prefecture Hitachi Chemical Co., Ltd. In-house F-term (reference) 4J001 DC10 EB36 EB37 EB46 EB55 EB57 EB60 EB65 EB67 EC07 EC08 EC09 EC29 EC45 EC46 EC47 EC48 EC65 EC66 EC67 EC70 EC75 EC81 EE18A FB03 FC 06 JA07 JB02 JB07 JC06 4J002 CL07W CM05X EV236 FD11X FD116 GQ00 HA08 4J038 DH021 DJ002 DL081 HA156 JA02 JA05 JA19 JA20 JA26 JA27 JA33 JA56 JA70 JA74 JB12 JB18 JB21 JB27 JC01 JC11 JC18 MA20 MA13 MA12 MA13 MA12 MA07 DE01 5H029 AJ00 AK11 AL06 AM16 CJ02 CJ13 CJ23 EJ12 EJ13 HJ02
Claims (9)
系重合体及び溶媒を含んでなるポリアニリン系ペース
ト。1. A polyaniline paste comprising conductive polyaniline particles, a polyamide polymer and a solvent.
0.1S/cmを超える請求項1記載のポリアニリン系ペー
スト。2. The polyaniline-based paste according to claim 1, wherein the conductivity of the coating film obtained by coating and drying exceeds 0.1 S / cm.
が、フェノールスルホン酸、フェノールジスルホン酸、
ニトロベンゼンスルホン酸、スルホ安息香酸及びスルホ
コハク酸からなる群より選ばれる少なくとも1種である
請求項1又は2記載のポリアニリン系ペースト。3. The conductive polyaniline-based particles having a dopant of phenolsulfonic acid, phenoldisulfonic acid,
3. The polyaniline-based paste according to claim 1, wherein the paste is at least one selected from the group consisting of nitrobenzenesulfonic acid, sulfobenzoic acid, and sulfosuccinic acid.
130℃以上である請求項1、2又は3記載のポリアニ
リン系ペースト。4. The polyaniline paste according to claim 1, wherein the polyamide polymer has a glass transition temperature of 130 ° C. or higher.
成分が、一般式(I) 【化1】 (式中、Y1は二価の炭化水素基であり、Y2は一価の炭
化水素基を表し、2個のY1は同じでも異なっていても
良く、複数個のY2は互いに同一でも異なっていても良
く、mは1以上の整数である)で表されるジアミノシロ
キサンを含む請求項1、2、3又は4記載のポリアニリ
ン系ペースト。5. The diamine component constituting the polyamide polymer is represented by the general formula (I): (Wherein, Y 1 is a divalent hydrocarbon group, Y 2 is a monovalent hydrocarbon group, two Y 1 s may be the same or different, and a plurality of Y 2 are the same The polyaniline-based paste according to claim 1, 2 or 3, wherein m is an integer of 1 or more.
ストを用いて電解質の少なくとも一部を形成することを
特徴とする固体電解コンデンサの製造法。6. A method for producing a solid electrolytic capacitor, wherein at least a part of an electrolyte is formed using the polyaniline-based paste according to claim 1.
ルオキソ二硫酸アンモニウム水溶液とアニリン化合物及
び有機スルホン酸を含有する溶液を交互に含浸させる工
程及び前記工程の後、請求項1〜5記載のポリアニリン
系ペーストを含浸させ、乾燥する工程を含むことを特徴
とする固体電解コンデンサの製造法。7. The method according to claim 1, wherein the device having an oxide film formed on the valve metal is alternately impregnated with an aqueous solution of ammonium peroxodisulfate and a solution containing an aniline compound and an organic sulfonic acid. A method for producing a solid electrolytic capacitor, comprising a step of impregnating a polyaniline-based paste and drying.
ルオキソ二硫酸アンモニウム水溶液とアニリン化合物及
び有機スルホン酸を含有する溶液を含浸する工程及び前
記工程の後、請求項1〜5記載のポリアニリン系ペース
トを含浸させ、乾燥する工程を含むことを特徴とする固
体電解コンデンサの製造法。8. A polyaniline-based compound according to claim 1, wherein said element having an oxide film formed on a valve metal is impregnated with an aqueous solution of ammonium peroxodisulfate and a solution containing an aniline compound and an organic sulfonic acid, and after said step. A method for producing a solid electrolytic capacitor, comprising a step of impregnating and drying a paste.
デンサの製造法によって製造された固体電解コンデン
サ。9. A solid electrolytic capacitor manufactured by the method for manufacturing a solid electrolytic capacitor according to claim 6, 7, or 8.
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CN110073455A (en) * | 2016-11-18 | 2019-07-30 | 日本轻金属株式会社 | The manufacturing method of aluminium electrolutic capacitor electrode |
CN110474095A (en) * | 2019-08-28 | 2019-11-19 | 易航时代(北京)科技有限公司 | A kind of composite solid electrolyte and application, all solid lithium metal battery and preparation method thereof |
CN110474095B (en) * | 2019-08-28 | 2020-11-13 | 易航时代(北京)科技有限公司 | Composite solid electrolyte and application thereof, all-solid-state lithium metal battery and preparation method thereof |
CN114015173A (en) * | 2021-11-19 | 2022-02-08 | 广东腐蚀科学与技术创新研究院 | Modified polyaniline/polyamide filler doped composite conductive blend and preparation method thereof |
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