JP2001019159A - Carrying device of spherical object and atmosphere converting method of spherical object - Google Patents

Abstract

PROBLEM TO BE SOLVED: To convert an atmosphere while carrying a spherical object such as spherical monocrystal silicon at a high speed by contacting a spiral flow with a first atmosphere including the spherical object, diffusing the first atmosphere by selectively sucking the first atmosphere to the outside, and sending out the separated sphercal object to the next process in a second atmosphere. SOLUTION: Reaction gas including monosilane and N2O gas and including a monocrystal silicon ball having a diameter of about 1 mm is blown into an exhaust chamber 22 formed in a suction/exhaust part 20 of a carrying device put in a negative pressure state by a recovering pump 24 from an inner tube 12 from an oxide film forming process using a CVD method to be contacted with a spiral flow generated by a spiral flow forming part 10 having high pressure gas supply ports 15a, 15b formed in the tangent direction to duffuse the reaction gas by adiabatic expansion to be sucked by the recovering pump 24 to be exhausted to a recovering tank. The reaction gas-removed silicon ball is then accelerated by a pulse of carrier gas composed of inert gas in a sending- out part 30 to be sent out to the next process.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for transferring a spherical object, and more particularly to an apparatus for converting a transfer atmosphere when transferring a spherical object such as a spherical single crystal silicon through different atmospheres.

[0002]

2. Description of the Related Art Conventionally, when a semiconductor device is formed, a method of forming a semiconductor chip by forming a circuit pattern on a silicon wafer and dicing the circuit pattern as needed is conventionally employed. Under these circumstances, in recent years, a technology for manufacturing a semiconductor element by forming a circuit pattern on a spherical semiconductor (Ball Semiconductor) having a diameter of 1 mm or less such as single crystal silicon has been developed. For example, in order to form discrete elements or semiconductor integrated circuits such as solar cells and optical sensors using spherical single-crystal silicon, the mirror polishing process of spherical single-crystal silicon, cleaning process, thin film forming process, resist coating, photo Various processing steps such as a lithography step and an etching step are required. In order to efficiently manufacture a semiconductor element from this spherical single crystal silicon, it is necessary to connect each processing step to form a line.

However, in each process, treatment is performed in various atmospheres including not only gases such as active gas and inert gas, but also liquids such as water and various solutions. In the case of connecting such processing steps, it is necessary to prevent the atmosphere for transporting the workpiece from being carried from the previous step to the subsequent step. It is necessary to convert the atmosphere into an atmosphere suitable for the process and transport the workpiece. In addition, this work requires high-speed processing and high reliability in terms of productivity and quality.

[0004] Further, in performing such line-forming, if spherical silicon conveyed from the previous step is irregularly supplied to the next step, the amount of spherical silicon supplied in the next step fluctuates. For this reason, the processing conditions must be changed in accordance with the fluctuation amount, and efficient processing cannot be performed. Therefore, it is necessary to supply spherical objects such as spherical silicon to the next step sequentially at regular intervals. In addition, the silicon surface is easily oxidized, and when a natural oxide film is formed on the surface, there is a problem that the contact property with a metal electrode layer or the like formed thereon is deteriorated, and without contact with the outside air, It is desirable that transport and processing take place in a closed space.

[0005]

SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems, and converts the atmosphere while conveying a spherical object at high speed without the need for a complicated mechanism. It is an object of the present invention to provide a device for transporting spherical objects, which can prevent leakage of spheres. In particular, it is an object of the present invention to perform high-speed and reliable semiconductor processing such as film formation processing and etching processing of a spherical semiconductor such as spherical single crystal silicon.

[0006]

SUMMARY OF THE INVENTION Therefore, the present invention provides a device for transporting a spherical object, in which a spiral flow is brought into contact with a first atmosphere containing the spherical object at an injection port thereof, and a first flow is swirled into the spiral flow. While selectively sucking the atmosphere outward and diffusing it outward, the sphere is guided so as to pass through the center of the transfer device, and a second atmosphere is supplied to the sphere, It is characterized in that it is sent to the next step together with the second atmosphere. As described above, the apparatus of the present invention uses the spiral flow to guide the first atmosphere gas outward, and makes the vicinity of the center a negative pressure state by utilizing the negative pressure at the center generated by the injection of the spiral flow. Here, the second atmosphere gas is supplied here, and the atmosphere can be converted without the need for a complicated mechanism in the processing of a spherical object such as a spherical single crystal silicon. Become.

That is, in the first apparatus for transferring a spherical object of the present invention, the transfer fluid flows in from the tangential direction of the tubular flow path,
A spiral flow forming means for forming a spiral flow of the carrier fluid, a supply pipe for supplying the spherical material together with the first atmosphere, and a first atmosphere containing the spherical material near an outlet of the supply pipe.
The first atmosphere is selectively sucked outward together with the spiral flow and discharged to remove the first atmosphere, while being brought into contact with the spiral flow and guiding the spherical object to pass through the center. A second fluid for forming a second atmosphere is supplied to the first atmosphere discharge section to be formed and the spheres sent from the suction and discharge section, and the spheres are formed together with the second fluid. And a second atmosphere supply unit for sending.

According to this configuration, a spiral flow is formed,
A first atmosphere containing a spherical object is brought into contact with the first
Is selectively sucked outward together with the swirling flow to discharge and remove the first atmosphere, while guiding the spherical object so as to pass through the center, thereby achieving a favorable first atmosphere. Is removed, and the atmosphere is efficiently replaced by supplying the second fluid when a negative pressure is reached. Note that the first atmosphere can be accelerated while being swirled by the vortex flow and diffused outward, so that more efficient exhaust is possible. Also,
Since transfer in a small closed space is possible, it can be replaced by a small amount of atmosphere. Further, it can be formed by a very simple device without requiring a complicated mechanism.

According to a second aspect of the present invention, the first atmosphere discharge portion is connected to a vicinity of an outlet of the supply pipe, through which fluid can flow in and out, and forms a passage for the spherical object inside. An inner tube and a discharge chamber surrounding the inner tube are provided. According to such a configuration, scattering of the spherical object can be prevented by the inner pipe through which the fluid can flow in and out, and the atmosphere can be efficiently removed.

According to a third aspect of the present invention, the discharge chamber is a cylindrical pipe formed so as to surround the inner pipe, and is discharged through a discharge port provided on an outer peripheral surface near a downstream end. It is characterized by being constituted so that. According to such a configuration,
Since the exhaust air is directed outward, a flow toward the outside can be formed in the discharge chamber, and the flow of the spiral flow involving the first atmosphere can be efficiently guided to the outside. .

According to a fourth aspect of the present invention, the discharge hole is provided with a plurality of holes arranged at a predetermined interval on the same circumference along the outer peripheral surface. . Furthermore, it becomes possible to efficiently guide the flow of the spiral flow outward.

According to a fifth aspect of the present invention, the first atmosphere and the swirl flow are composed of a gas.
A vacuum chamber disposed in a band shape on an outer peripheral surface of the discharge chamber so as to surround all of the plurality of holes; the vacuum chamber includes an exhaust pump to discharge the first atmosphere to the outside; It is characterized by having such a configuration. According to this configuration, the spiral flow efficiently guided to the outside is efficiently guided to the outside vacuum chamber from the outer peripheral surface of the discharge chamber, and the vacuum chamber is evacuated by the exhaust pump, whereby Although the air is exhausted to the discharge chamber, the air is uniformly guided in a rectified state toward the outer peripheral direction of the discharge chamber, and the removal efficiency can be further improved.

According to a sixth aspect of the present invention, the inner tube is a porous tube made of a porous tube material formed so as to form a passage having a diameter slightly larger than the diameter of the spherical object. There is a feature.

According to a seventh aspect of the present invention, the inner tube has a number of through holes smaller than the diameter of the spherical object,
Characterized in that the tube is formed so as to be able to pass through the atmosphere.

According to an eighth aspect of the present invention, the inner tube is a tube formed of a mesh material capable of preventing the spherical object from flowing out.

According to a ninth aspect of the present invention, the discharge chamber is a cylindrical tube formed so as to surround the inner tube, the inner peripheral surface of which is enlarged toward the downstream side and approaches the outer peripheral surface. , And is formed so as to guide the spiral flow to the outside.

According to a tenth aspect of the present invention, the discharge hole is provided at a downstream end of the tapered surface.

According to an eleventh aspect of the present invention, the first atmosphere discharge portion is connected to a vicinity of an outlet of the supply pipe, is capable of inflow and outflow of a fluid, and has a porous member formed therein to form a passage for the spherical object. Straight pipe portion made of a porous material, and an inner peripheral surface is enlarged toward the downstream side to form a tapered surface formed so as to approach the outer peripheral surface, and a taper formed so as to guide the spiral flow outward. And a discharge chamber formed so as to surround at least the straight pipe portion.

According to a twelfth aspect of the present invention, the spiral flow forming means includes a tubular body arranged to form a spiral flow path outside the supply pipe, and an upstream portion on an outer peripheral surface of the tubular body. In the vicinity of the side end, there is provided a fluid supply means for supplying a fluid from a tangential direction, and the fluid supply means blows the fluid from a tangential direction on the outer periphery of the passage to form a spiral flow along the passage. It is characterized by having such a configuration.

According to a thirteenth aspect of the present invention, the spiral flow path is provided with an injection hole at a downstream end.

According to a fourteenth aspect of the present invention, the spiral flow passage is surrounded by an outer peripheral surface of a straight tubular inner tube and an inner peripheral surface of an outer tube, and has a straight cross section formed to have the same sectional area. And an injection hole connected to the straight portion and at a downstream end thereof.

According to a fifteenth aspect of the present invention, the sphere is single crystal silicon, and the fluid is an inert gas.

According to a sixteenth aspect of the present invention, the fluid is a second fluid.
Is a gas that forms the atmosphere described above.

According to a seventeenth aspect of the present invention, the swirl flow forming means is configured to form a swirl flow of an inert gas controlled at a cooling temperature.

According to an eighteenth aspect of the present invention, the second atmosphere supply unit includes pulse generating means for supplying the second fluid as a pressurizing pulse, and accelerates and sends the spherical object. It is characterized by comprising.

According to a nineteenth aspect of the present invention, a vortex flow forming step of flowing the carrier fluid from the tangential direction of the tubular flow path to form a vortex flow of the carrier fluid; Along with the fluid that forms the first atmosphere, a sphere-containing fluid supply step of supplying a sphere, and the sphere-containing fluid is brought into contact with the spiral flow so that the sphere passes through the center. While the first
A first atmosphere discharging step of selectively sucking the atmosphere of the atmosphere together with the spiral flow outward and discharging the first atmosphere;
A second fluid forming a second atmosphere is jetted toward the discharged spherical object in the first atmosphere in the suction / discharge step, and the spherical object is accelerated and sent out together with the second fluid. And a second atmosphere supply step.

According to a twentieth aspect of the present invention, the semiconductor sphere has the first
A first reaction step of supplying a reactive gas and performing a first reaction; and forming a spiral flow in which a second gas as the carrier fluid flows in from a tangential direction of the tubular flow path to form a spiral flow. A supply step of supplying the semiconductor spheres after the first reaction step together with the first reactive gas inside the spiral of the spiral flow along the central axis along the central axis; The first reactive gas is brought into contact with the spiral flow to guide the spherical object so as to pass through the center, while selectively sucking the first reactive gas outward with the spiral flow. Discharging a first reactive gas, and ejecting a third gas toward the semiconductor sphere, accelerating the sphere, and leading to the second reaction step. And

According to a twenty-first aspect of the present invention, the second gas is an inert gas.

According to a twenty-second aspect of the present invention, the second gas is the same as the third gas.

According to a twenty-third aspect of the present invention, the first reaction step is a vapor phase growth step, and the second gas is a gas that has been cooled to a reaction temperature of the first reactive gas or less. An active gas, wherein the semiconductor sphere is brought into contact with the swirling flow of the cooled inert gas, thereby cooling the semiconductor sphere and replacing the semiconductor sphere with the inert gas.

According to a twenty-fourth aspect of the present invention, the second reaction step is a step of supplying a reactive gas.

According to a twenty-fifth aspect of the present invention, the spherical object is spherical single-crystal silicon, and the first reaction step comprises:
A nitriding treatment step configured to supply a nitrogen-containing gas controlled at a nitriding treatment temperature and performing nitrogen annealing,
The carrier fluid is a cooled inert gas and the second
Is a step in which a gas is supplied at room temperature to cause a reaction. In accelerating the spherical object in the delivery section, a plurality of piezoelectric elements may be attached to the delivery pipe at predetermined intervals, and the delivery pipe may be configured so that the inner diameter of the delivery pipe is locally reduced. The spherical object can be transported at a predetermined interval.

In this specification, the “atmosphere” means
It should include not only gases such as active gas and inert gas, but also liquids such as water and various solutions. "Spherical object" means not only spherical silicon but also spherical materials of various materials that require treatment in various atmospheres. Things.

[0034]

Next, an embodiment of the present invention will be described.
This will be described in detail with reference to the drawings. According to the present invention, as shown in FIGS. 1A to 1C, a reaction gas containing a monosilane (SiH ₄ ) and an N ₂ O gas (a first reaction gas) is formed from an oxide film forming step using a CVD method. From the single crystal silicon sphere 1 having a diameter of 1 mm supplied together with
The first reaction gas is removed, and a second reaction gas comprising an inert gas is removed.
A transfer device for sending to the next processing step together with the carrier gas.
The apparatus includes a swirl flow forming unit 10, a suction / discharge unit 20 that sucks a first reaction gas together with a swirl flow, and a high-pressure pulse of an inert gas applied to the single-crystal silicon sphere 1 to send out while accelerating. And a unit 30. Here, (1B) and (1C) in FIG. 1 correspond to (1) in FIG.
It is AA sectional drawing and BB sectional drawing of A).

The spiral flow forming section 10 has an inner diameter of 2 mm configured to allow single crystal silicon spheres to pass along with the first reaction gas from a supply port 11 connected to a CVD apparatus.
Inner tube 12 made of a Teflon pipe of
Outer tube 13 having an inner diameter of about 15 mm disposed so as to surround 2
And a first transport path 14 formed between the outer pipe 13 and the inner pipe 12 and communicating with the first transport path 14 so as to be point-symmetric with respect to a central axis. And the outer tube 1
3 is provided with two high-pressure gas supply ports 15a, 15b that penetrate through the outer wall and supply a high-pressure gas from a tangential direction, and eject an inert gas from the high-pressure gas supply ports 15a, 15b. Accordingly, a spiral flow is formed along the pipe wall of the inner pipe 12.

The suction / discharge section 20 is disposed at a predetermined distance from the lower end of the inner pipe 12, and has a recovery pipe 21 made of a porous pipe having a diameter larger than that of the inner pipe. And a cylindrical discharge chamber 22 disposed therein. The discharge chamber 2 for sucking and discharging the first reaction gas
The space inside 2 is connected to a recovery pump 24 as a decompression device and a recovery tank (not shown) cooled to a predetermined temperature through a plurality of discharge holes 23 arranged along the outer periphery of the downstream portion via piping. Have been.

The recovery pipe 21 communicates with the inner pipe 12,
The inner diameter is approximately equal to the inner tube 12 and is about 2 mm, and the outer diameter is about 4 mm. By setting the inside of the discharge chamber 22 to a reduced pressure state by the collection pump 24, the discharge chamber is in a negative pressure state with respect to the inside of the collection pipe 21,
The single-crystal silicon spheres sent from the CVD apparatus together with the gas containing the reactive gas (referred to as a first reaction gas) form a vortex rectified through the transfer path 14 at the open end of the inner tube 12. It is in contact with the flow and adiabatically expands in the large-diameter recovery pipe 21 and is efficiently discharged to the outer discharge chamber 22 together with the spiral flow.

Further, the discharge chamber 22 forms a tapered surface that spreads outward on the downstream side of the recovery pipe 21, and the first reaction gas discharged through the recovery pipe 21 flows along the tapered surface 27 T. It is configured to discharge efficiently while forming a laminar flow. Then, as shown in FIG. 1 (1C), the collected water is collected by a collection pump 24 through a collection hole 24 through discharge holes 23 arranged at predetermined intervals along the outer periphery near the downstream end of the discharge chamber 22. It has become. Here, as the porous material constituting the recovery pipe, a material obtained by a method such as sintering ceramic, resin, or metal powder is used. A large number of through holes are provided in the side wall of the recovery pipe 21 located inside the discharge chamber 22. Further, a downstream end of the recovery pipe 21 is connected to a discharge pipe 25 made of a Teflon pipe having substantially the same diameter as the inner pipe, and the discharge pipe 25 is connected to a delivery section 30 where it is ejected as a high-pressure pulse. It is accelerated and delivered by the second carrier gas made of inert gas.

The sending section 30 includes an acceleration pipe 31 and a branch pipe 3
The upper end of the acceleration tube 31 is connected to the discharge tube 25 via the joint tube 33. Here, a second carrier gas is supplied in a pulse form into the branch pipe 32 by the pulse generator 35, and the accelerated inert gas accelerates the single crystal silicon sphere to a desired speed while accelerating the single crystal silicon sphere. Is selected so as to be transmitted by the following. The branch angle θ is not particularly limited as long as it can accelerate, but is preferably at least 45 ° or less, particularly preferably 30 ° or less. If the branch angle θ is larger than 45 °, the second carrier gas may flow backward in the joint tube and hinder the movement of the single crystal silicon sphere.

Next, the operation of the transfer device having the atmosphere conversion function according to the embodiment of the present invention will be described. First, the discharge chamber 22
The internal space is brought into a negative pressure state with respect to the space inside the recovery pipe by the action of the recovery pump 24, and the inside of the recovery pipe 21 made of a porous material is also brought into a negative pressure state. Since the inside of the recovery pipe 21 is at a negative pressure, the first reaction gas containing single-crystal silicon spheres sent from the inner pipe 12 near the boundary between the recovery pipe and the inner pipe 12 is supplied to the first transport path 14. Is formed inside and comes into contact with the vortex flow rectified along the outer wall of the inner pipe 12, adiabatically expands and spreads, is sucked by the recovery pump, and is recovered through the discharge chamber 22 and the discharge hole without stagnation. Drained into tank.

On the other hand, the single-crystal silicon sphere from which the first reaction gas has been removed is supplied to the delivery section 30 by the second sphere made of an inert gas.
Are accelerated by the pulse of the carrier gas and are sent out at predetermined intervals. In this manner, the single-crystal silicon is accelerated together with the second carrier gas composed of an inert gas or the like while the atmosphere such as the monosilane (SiH ₄ ) and the N ₂ O gas used in the previous step is removed. To the process. The space inside the discharge chamber 22 is preferably controlled to a predetermined temperature in order to efficiently collect the atmosphere.

The recovery pipe 21 is made of a porous material, but is not limited to this.
A large number of through holes may be provided in the side wall of the recovery pipe 21 located inside. The material of the recovery pipe 21 may be ceramic, resin, metal, or a material obtained by coating the above various materials with a resin in accordance with a transport atmosphere, for example, an inert gas or water. The number and diameter of the through holes formed in the side wall of the collection pipe 21 can be arbitrarily set within a range that does not hinder the smooth conveyance of the spherical object. Note that the recovery pipe 21 may be manufactured from a porous material obtained by sintering a powder of ceramic, resin, or metal. In this case, the recovery pipe is formed of a porous material. Since there is no need to separately form a through hole in the side wall, the cost of manufacturing the recovery pipe 21 can be reduced. In the discharge chamber 22, gas and the like in the recovery pipe 21 are guided to the recovery tank through the discharge chamber 22 over a wide area by a differential pressure generated by the operation of the recovery pump. Since the first carrier gas atmosphere is efficiently removed together with the swirling flow, the atmosphere does not easily remain in the recovery pipe.

When a resin is used as the material of the recovery pipe 21, a fluororesin is preferable from the viewpoint of heat resistance, chemical resistance and sinterable surface. The inert gas forming the spiral flow is desirably controlled at a desired temperature, so that the inert gas passes through the first transfer path 14 and is rectified while the inert gas itself is rectified. It is also possible to heat or cool the single crystal silicon sphere and the first carrier gas in the tube 12.

Next, a modified example of the transmitting section will be described as a second embodiment of the present invention. As shown in FIG. 2, the delivery section 30 tilts the supply hole 34 so that the delivery direction is inclined from the supply direction, and the acceleration energy of the high-voltage pulse can be more appropriately transmitted to the single crystal silicon sphere. It was done. The delivery section 30 is provided with an acceleration tube 31 for applying a pulse of an inert gas as a second carrier gas to the single crystal silicon sphere in the delivery direction, and a branch tube 32. The upper end of 31 is connected to the discharge pipe 25 via a joint tube (not shown).

Specifically, as shown in detail in FIG. 2, a number of supply holes 34 penetrating from the outer circumferential surface to the inner circumferential surface of the acceleration tube 31 are provided at positions where the branch tube 32 is connected. The supply hole 34 is formed so as to be inclined at an angle α in the conveying direction of the spherical object. The angle α is not particularly limited as long as the inert gas for acceleration injected into the accelerating tube 31 can sufficiently accelerate the spherical object, similarly to the branch angle θ described above.゜ is preferred, and particularly preferred is 30 特 に or less. If the angle α is larger than 45 °, the inert gas may flow backward to the upstream side of the accelerating tube 31 to hinder the movement of the spherical object.

In this manner, the accelerated inert gas supplied from the pulse generator (not shown) into the branch pipe 32 through the second carrier gas supply nozzle (not shown) is converted to single crystal silicon. It is configured so that the ball can be delivered while being accelerated. The connection position of the branch pipe 32 is not particularly limited, but in order to minimize the pressure loss of the second carrier gas supplied therefrom, the acceleration pipe 31 is connected to a position as close as possible to the recovery pipe 21. Is preferred. The second carrier gas supply nozzle is attached to a distal end of a supply tube extending from a pulse generator (not shown), and a second carrier gas supply nozzle made of argon gas as an accelerating fluid.
Is injected into the branch pipe 32. Branch pipe 32
The second carrier gas injected into the inside is injected into the acceleration tube 31 from the branch point through the supply hole 34 to accelerate the single crystal silicon sphere moving from the joint tube 33 into the acceleration tube 31. Send out. According to such an apparatus, only by changing the inclination angle of the supply hole, the delivery direction can be extremely easily inclined with respect to the supply direction.
This is particularly effective in the case of sequentially performing a multi-stage process.

Next, a third embodiment of the present invention will be described. This example is characterized in that the sending section 30 is disposed closer to the collection pipe 21. As shown in FIG.
A branch pipe 32S connected to the pulse generator 35 is provided to penetrate the discharge chamber 22. After being exhausted by the recovery pipe, the branch pipe 32S is immediately accelerated by the second carrier gas and is sent well. It is like that. Unlike the first embodiment, the first transport path 14 is composed of only a straight portion and has a small diameter at the tip. The other parts are formed in exactly the same manner as in the first embodiment shown in FIG. 1. Also, the outlet of the first transport path 14 for forming a spiral flow without disposing the recovery pipe 21. After the spiral flow and the single crystal silicon sphere containing the first reaction gas are brought into contact with each other in the vicinity, the first reaction gas may be diffused outward together with the spiral flow.

An example of this configuration will be described as a fourth embodiment. In this example, as shown in FIG.
In this case, the inner pipe 12 directly communicates with the small-diameter space 26 without a recovery pipe made of a porous pipe, and the spiral flow flows along the tapered surface 27T of the tapered portion 27 on the inner periphery of the discharge chamber 22. While diffusing outward with the reaction gas, the small space 26
Through the center of the discharge chamber 22 and the first
Characterized in that the spherical single-crystal silicon from which the reaction gas has been removed is disposed so as to be guided to a lower sending portion, and the other portions are formed exactly as in the first embodiment. . Even with such an apparatus, it is possible to efficiently convert the atmosphere.

As described above, in the present invention, the first reactive gas, which is the first atmosphere used in the previous step, is suctioned and removed through the space inside the discharge chamber 22 and used in the next step. Since these atmospheres are introduced into the acceleration tube 31 through the delivery section 30, these atmospheres do not mix with each other. If it is necessary to completely replace the atmosphere by eliminating the residual reaction gas in the previous step, then, as shown in the fifth embodiment, the exhaust efficiency of the discharge chamber is increased,
As shown in the embodiment of the present invention, this device may be connected in multiple stages in series.

First, a fifth embodiment of the present invention will be described. Here, as shown in FIG.
2 are arranged concentrically at a predetermined interval along the outer peripheral surface of the plurality of discharge holes 23 and surround all of the plurality of discharge holes 23.
A vacuum chamber 28 disposed in a belt shape on the outer peripheral surface of the discharge chamber is provided. The vacuum chamber 28 is connected to a recovery pump 24 to discharge the first atmosphere to the outside. 5A is a cross-sectional view of a transport device according to a fifth embodiment of the present invention, FIG. 5B is a cross-sectional view taken along line AA of FIG. 5A, and FIG. FIG. 6B is a sectional view taken along line BB of FIG. According to this apparatus, as shown in FIG. 5 (5C), the spiral flow and the first reaction gas conveyed downstream through the tapered surface 27T form a uniform flow, and the spiral flow flows to the outer peripheral wall. Since the gas is discharged well as it is, the discharge efficiency is further improved.

Next, a sixth embodiment will be described. This device is obtained by connecting the devices shown in the first embodiment in a plurality of stages in series. According to such a configuration, the replacement efficiency is improved. As described above, in the present invention, the atmosphere of the previous process is entrained and accelerated by the vortex flow to be efficiently removed, and the atmosphere or the inert gas of the next process is ejected and sent to the negative pressure spherical material. Therefore, the atmosphere can be converted in the process of processing a spherical object such as a spherical single crystal silicon without a complicated mechanism and control. If the gas used in two successive steps is highly reactive, the apparatus of the present invention is used in two stages, and in the first stage, it is replaced with an inert gas once, and then in the second stage. What is necessary is just to replace with the gas of the next process. Further, as a carrier fluid for forming a spiral flow, if an inert gas controlled at a desired temperature is supplied, an object to be processed such as spherical single crystal silicon can be rapidly reduced to a desired temperature. It can be guided, and annealing at a high temperature can be very easily performed.

Further, as the second reaction gas,
By supplying a reactive gas controlled at a desired temperature, it is possible to efficiently and uniformly form a film or etch a small amount of gas on an object to be processed such as spherical single crystal silicon. Become. Furthermore, the composition of the gas to be supplied can be changed from an oxidizing gas to a gas containing nitrogen, and an oxide film and a nitride film can be continuously formed.

Furthermore, the first gas supply chamber and the first gas discharge chamber located on the upstream side and the second gas supply chamber located on the downstream side
A gas supply chamber and a second gas discharge chamber, and the first gas supply chamber is a nitridation chamber that supplies a nitrogen-containing gas controlled at a nitriding temperature and performs nitrogen annealing. The second gas supply chamber may be a temperature adjustment chamber configured to supply gas at room temperature. According to such a configuration, in the transport process from the previous process to the next process,
The nitriding treatment can be performed very easily and easily.

By using such a transfer device, the manufacture of MOS devices using spherical single-crystal silicon, the manufacture of solar cells, and the like can all be carried out by using a transfer path including a closed space, a rotary successor, It is also possible to form them without taking them out into the atmosphere by a combination of these methods. For example, a spherical single-crystal silicon is prepared, polished in a polishing apparatus, and transported between each apparatus using the transport apparatus of the present invention, and a controlled gas is supplied and discharged only. It is also possible to form a MOSFET in a closed space without being exposed to the atmosphere.

That is, first, the spherical single crystal silicon is washed, the natural oxide film on the surface is removed, a gate insulating film is formed by thermal oxidation, a polycrystalline silicon layer is formed by a CVD process, and then the polycrystalline silicon layer is formed by a photolithography process. A gate electrode is formed by patterning the crystalline silicon layer. Then, after forming an interlayer insulating film, a polycrystalline silicon film containing a desired impurity is formed on the surface, a source / drain diffusion is performed from the polycrystalline silicon film, and a source / drain region is formed. The silicon layer is used as a source / drain contact layer. Finally, by forming the electrodes, the MOSFET is formed very efficiently in the closed space.

By using such an apparatus, it is possible to perform a desired surface treatment with an extremely small amount of gas.
Since the gas in the previous step can be efficiently discharged using the spiral flow and replaced with the gas in the next step, peeling and scratching do not occur, and a highly reliable semiconductor device can be formed with high yield. In addition, in the above-described embodiment, the supply / discharge in the case where the gas is used as the atmospheric gas and the carrier fluid is described, but the present invention is also applicable to the case where the liquid is used.
Further, a gas containing a reducing gas such as hydrogen or halogen may be used as the carrier fluid.

[Brief description of the drawings]

FIG. 1 is a view showing a first embodiment of a transfer apparatus of the present invention, wherein (1A) is a cross-sectional view showing a first embodiment of the transfer apparatus of the present invention, and (1B) is (1A). AA sectional view of
(1C) is a BB cross-sectional view of (1A).

FIG. 2 is an enlarged sectional view of a main part showing a sending section according to a second embodiment of the present invention.

FIG. 3 is a sectional view showing a third embodiment of the transport device of the present invention.

FIG. 4 is a sectional view showing a fourth embodiment of the transport device of the present invention.

FIG. 5 is a view showing a fifth embodiment of the transfer apparatus of the present invention, in which (5A) is a sectional view showing the fifth embodiment of the transfer apparatus of the present invention, and (5B) is (5A). AA sectional view of
(5C) is a BB cross-sectional view of (5A).

FIG. 6 is a sectional view showing a sixth embodiment of the transport device of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Spiral flow formation part 11 Supply port 12 Inner pipe 13 Outer pipe 14 Conveyance path 15a, 15b High-pressure gas supply port 20 Suction discharge part 21 Recovery pipe 22 Discharge chamber 23 Discharge hole 24 Recovery pump 25 Discharge pipe 27 Tapered part 27T Tapered surface 28 Vacuum chamber 30 Delivery unit 31 Acceleration tube 32, 32S Branch tube 33 Joint tube 34 Supply hole 35 Pulse generator

[Procedure amendment]

[Submission date] September 28, 2000 (2009.2)
8)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Name of invention

[Correction method] Change

[Correction contents]

[ Title of the Invention] Spherical object conveying device and atmosphere of spherical object
Qi conversion method

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0001

[Correction method] Change

[Correction contents]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device for transferring a spherical object and a method for converting the atmosphere of a spherical object, and an apparatus for changing the transfer atmosphere when transferring a spherical object such as a spherical single crystal silicon through different atmospheres. About.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0008

[Correction method] Change

[Correction contents]

According to this configuration, a spiral flow is formed,
A first atmosphere containing a spherical object is brought into contact with the first
Of atmosphere is selected for spherical objects together with the swirl flow
To be sucked outwardly, while removing the first atmosphere is discharged by the spherical object is guided so as to pass through the center, favorably removing the first atmosphere, a negative pressure state When the second fluid is supplied, the atmosphere can be efficiently replaced by supplying the second fluid. The first
Can be accelerated while being swirled by the swirling flow and diffused outward, so that more efficient exhaust is possible. Further, since the transfer in a small closed space is possible, it can be replaced by a small amount of atmosphere. Further, it can be formed by a very simple device without requiring a complicated mechanism.

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0009

[Correction method] Change

[Correction contents]

[0009] According to a second aspect of the present invention, the first atmosphere discharge unit is installed near the outlet of the supply pipe, the first
A collection pipe that allows the first atmosphere, which is a fluid, to flow in and out, and forms a passage for the spherical object therein; and a discharge chamber that surrounds the collection pipe. . According to such a configuration, it is possible to collect and discharge the first atmosphere.
The pipe can prevent the sphere from scattering, and the atmosphere can be efficiently removed.

[Procedure amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0010

[Correction method] Change

[Correction contents]

According to a third aspect of the present invention, the discharge chamber is constituted by a cylindrical tube formed so as to surround the recovery pipe ,
The cylindrical tube is configured to be discharged through a discharge hole provided on an outer peripheral surface near a downstream end of the cylindrical tube . According to such a configuration, since the exhaust gas is directed outward, a flow toward the outside can be formed in the discharge chamber, and the flow of the spiral flow involving the first atmosphere can be efficiently directed outward. It is possible to guide.

[Procedure amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0013

[Correction method] Change

[Correction contents]

According to a sixth aspect of the present invention,Recovery pipe
Has a diameter inside which is slightly larger than the diameter of the spherical object.
Multi-layer of porous tubing formed to form channels
It is a porous tube.

[Procedure amendment 8]

[Document name to be amended] Statement

[Correction target item name] 0014

[Correction method] Change

[Correction contents]

According to a seventh aspect of the present invention,Recovery pipe
Has a large number of through holes smaller than the diameter of the spherical object,
The tube is formed so as to be able to pass through the first atmosphere.
It is characterized by.

[Procedure amendment 9]

[Document name to be amended] Statement

[Correction target item name] 0015

[Correction method] Change

[Correction contents]

According to an eighth aspect of the present invention,Recovery pipe
Can prevent the spherical object from flowing out
It is a tube formed of a mesh material.

[Procedure amendment 10]

[Document name to be amended] Statement

[Correction target item name] 0016

[Correction method] Change

[Correction contents]

According to a ninth aspect of the present invention, the discharge chamber is constituted by a cylindrical pipe formed so as to surround the recovery pipe ,
Downstream of the collecting pipe, before being enlarged toward the downstream side
The tapered surface is formed so as to approach the inner circumferential surface of the cylindrical tube, and is formed so as to guide the spiral flow outward.

[Procedure amendment 11]

[Document name to be amended] Statement

[Correction target item name] 0018

[Correction method] Change

[Correction contents]

According to the 11 of the present invention, the first atmosphere discharge unit is installed near the outlet of the supply pipe, the first
A collection pipe made of a porous material capable of flowing in and out of the first atmosphere , which is a fluid, and forming a passage for the spherical object therein; and a downstream side of the recovery pipe toward the downstream side. Expanded
A tapered surface formed so as to approach the inner peripheral surface of the recovery pipe, and a taper portion formed to guide the spiral flow to the outside; and a discharge formed to surround at least the recovery pipe. And a chamber.

[Procedure amendment 12]

[Document name to be amended] Statement

[Correction target item name] 0019

[Correction method] Change

[Correction contents]

According to a twelfth aspect of the present invention, the spiral flow forming means includes an outer pipe disposed outside the supply pipe so as to form a spiral flow path, and an upstream pipe on an outer peripheral surface of the outer pipe. In the vicinity of the side end, there is provided a fluid supply means for supplying a carrier fluid from a tangential direction, and the fluid supply means blows fluid from a tangential direction on the outer periphery of the passage to form a spiral flow along the passage. It is characterized by being constituted.

[Procedure amendment 13]

[Document name to be amended] Statement

[Correction target item name] 0021

[Correction method] Change

[Correction contents]

According to a fourteenth aspect of the present invention, the spiral flow passage is surrounded by an outer peripheral surface of a straight tubular supply pipe and an inner peripheral surface of an outer pipe, and has a straight cross section formed to have the same sectional area. Department and
It is connected to the straight portion and is provided with an injection hole at a downstream end.

[Procedure amendment 14]

[Document name to be amended] Statement

[Correction target item name] 0023

[Correction method] Change

[Correction contents]

According to a sixteenth aspect of the present invention, the second fluid is a gas forming a second atmosphere.

[Procedure amendment 15]

[Document name to be amended] Statement

[Correction target item name] 0024

[Correction method] Change

[Correction contents]

According to a seventeenth aspect of the present invention, the swirl flow forming means is configured to form a swirl flow of the inert gas controlled at a predetermined temperature .

[Procedure amendment 16]

[Document name to be amended] Statement

[Correction target item name] 0026

[Correction method] Change

[Correction contents]

According to a nineteenth aspect of the present invention, a vortex flow forming step of flowing the carrier fluid from the tangential direction of the tubular flow path to form a vortex flow of the carrier fluid; Along with the fluid that forms the first atmosphere, a sphere-containing fluid supply step of supplying a sphere, and the sphere-containing fluid is brought into contact with the spiral flow so that the sphere passes through the center. While the first
A first atmosphere discharging step of selectively sucking the atmosphere with the spiral flow outward with respect to the spherical object and discharging the first atmosphere, and a first atmosphere discharging step of sucking and discharging the first atmosphere. A second atmosphere supplying step of ejecting a second fluid forming a second atmosphere toward the discharged spherical object, accelerating the spherical object, and sending the spherical object together with the second fluid. It is characterized by including.

[Procedure amendment 17]

[Document name to be amended] Statement

[Correction target item name] 0027

[Correction method] Change

[Correction contents]

According to a twentieth aspect of the present invention, the semiconductor sphere has the first
A first reaction step of supplying a reactive gas and performing a first reaction; and forming a spiral flow in which a second gas as the carrier fluid flows in from a tangential direction of the tubular flow path to form a spiral flow. A supply step of supplying the semiconductor spheres after the first reaction step together with the first reactive gas inside the spiral of the spiral flow along the central axis along the central axis; the first reactive gas, wherein the contacting with the spiral flow, the one semiconductor ball guides so as to pass through the central portion, by sucking the first reactive gas outwardly together with the vortex flow, a step of discharging the first reactive gas, toward the semiconductor spheres, is ejected a third gas, said semiconductor
The present invention is characterized in that the body sphere is accelerated to lead to the second reaction step.

[Procedure amendment 18]

[Document name to be amended] Statement

[Correction target item name] 0030

[Correction method] Change

[Correction contents]

According to a twenty-third aspect of the present invention, the first reaction step is a vapor phase growth step, and the second gas is a gas that has been cooled to a reaction temperature of the first reactive gas or less. An active gas, wherein the semiconductor sphere is brought into contact with the cooled swirling flow of the inert gas to cool the semiconductor sphere and to discharge both the inert gas and the first reactive gas. .

[Procedure amendment 19]

[Document name to be amended] Statement

[Correction target item name] 0032

[Correction method] Change

[Correction contents]

According to a twenty-fifth aspect of the present invention, the semiconductor sphere
Is a spherical single crystal silicon, the first reaction step is a nitridation step configured to supply a nitrogen-containing gas controlled at a nitridation temperature, and a nitrogen annealing step is performed. The second reaction step is a step of supplying a gas at room temperature to cause a reaction. In accelerating the semiconductor sphere in the sending portion, a plurality of piezoelectric elements may be attached to the sending pipe at predetermined intervals, and the inner diameter of the sending pipe may be locally reduced. The semiconductor spheres can be transported at predetermined intervals.

[Procedure amendment 20]

[Document name to be amended] Statement

[Correction target item name] 0037

[Correction method] Change

[Correction contents]

The recovery pipe 21 communicates with the inner pipe 12,
The inner diameter is approximately equal to the inner tube 12 and is about 2 mm, and the outer diameter is about 4 mm. By setting the inside of the discharge chamber 22 to a reduced pressure state by the collection pump 24, the discharge chamber is in a negative pressure state with respect to the inside of the collection pipe 21,
The single-crystal silicon spheres sent from the CVD apparatus together with the gas containing the reactive gas (referred to as a first reaction gas) form a vortex rectified through the transfer path 14 at the open end of the inner tube 12. It is in contact with the flow and is efficiently discharged to the outer discharge chamber 22 together with the swirling flow.

[Procedure amendment 21]

[Document name to be amended] Statement

[Correction target item name] 0039

[Correction method] Change

[Correction contents]

The sending section 30 includes an acceleration pipe 31 and a branch pipe 3
The upper end of the acceleration tube 31 is connected to the discharge tube 25 via the joint tube 33. Here, a second carrier gas is supplied in a pulse form into the branch pipe 32 by the pulse generator 35, and the accelerated inert gas accelerates the single crystal silicon sphere to a desired speed while accelerating the single crystal silicon sphere. Is selected so as to be transmitted by the following. The branch angle θ is not particularly limited as long as it can accelerate, but is preferably at least 45 ° or less, particularly preferably 30 ° or less. When the branch angle θ is larger than 45 °, the upstream side of the acceleration tube 31
This is because the second carrier gas may flow backward to hinder the movement of the single crystal silicon sphere.

[Procedure amendment 22]

[Document name to be amended] Statement

[Correction target item name] 0046

[Correction method] Change

[Correction contents]

In this manner, the accelerated inert gas supplied from the pulse generator (not shown) into the branch pipe 32 through the second carrier gas supply nozzle (not shown) is converted to single crystal silicon. It is configured so that the ball can be delivered while being accelerated. The connection position of the branch pipe 32 is not particularly limited, but in order to minimize the pressure loss of the second carrier gas supplied therefrom, the acceleration pipe 31 is connected to a position as close as possible to the recovery pipe 21. Is preferred. The second carrier gas supply nozzle is attached to a distal end of a supply tube extending from a pulse generator (not shown), and a second carrier gas supply nozzle made of argon gas as an accelerating fluid.
Is injected into the branch pipe 32. Branch pipe 32
The second carrier gas injected into the accelerator tube 31 is injected from the branch point into the acceleration tube 31 through the supply hole 34, and is discharged into the discharge tube.
The single crystal silicon sphere that has moved from 25 into the acceleration tube 31 is accelerated and sent out. According to such an apparatus, the delivery direction can be very easily inclined with respect to the supply direction only by changing the inclination angle of the supply hole, which is particularly effective in the case of sequentially performing a multi-stage process. .

[Procedure amendment 23]

[Document name to be amended] Statement

[Correction target item name] 0048

[Correction method] Change

[Correction contents]

An example of this configuration will be described as a fourth embodiment. In this example, as shown in FIG.
In, the inner tube 12 directly without collection pipe made of a porous tube communicated with the small spaces of large diameter, spiral flow discharge chamber 22
Inner while spreading outward together with the first reaction gas along the circumference of the tapered surface 27T of the tapered portion 27, the discharge pipe 25 communicating with the small space through the center of the discharge chamber 22, the first reaction gas This is characterized in that the spherical single-crystal silicon from which is removed is arranged so as to be guided to a lower sending portion, and the other portions are formed exactly as in the first embodiment. Even with such an apparatus, it is possible to efficiently convert the atmosphere.

 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Tashiro Arai 4-10-36 Shinsaku, Takatsu-ku, Kawasaki-shi, Kanagawa Japan Pneumatic System Co., Ltd. F-term (reference) 5F031 CA20 GA63 NA04 NA04 NA05

Claims (25)

[Claims] 1. A spiral flow forming means for flowing a carrier fluid from a tangential direction of a tubular flow path to form a spiral flow of the carrier fluid, a supply pipe for supplying a spherical object together with a first atmosphere, and the supply pipe. In the vicinity of the outlet, the first atmosphere containing the spherical object is brought into contact with the spiral flow to guide the spherical object so as to pass through the central portion, while selectively introducing the first atmosphere together with the spiral flow. To the outside and discharge
A first atmosphere discharging unit for removing the atmosphere, and a second fluid for forming a second atmosphere is supplied to the spherical object delivered from the suction and discharging unit, and the spherical object is removed from the spherical object. And a second atmosphere supply unit that sends out together with the second fluid. 2. An inner pipe connected to a vicinity of an outlet of the supply pipe, capable of flowing in and out of a fluid, and forming a passage for the spherical object therein; 2. The apparatus according to claim 1, further comprising a discharge chamber surrounding the periphery. 3. The discharge chamber is a cylindrical pipe formed so as to surround the inner pipe, and is configured to be discharged through a discharge port provided on an outer peripheral surface near a downstream end. 3. The apparatus for conveying spherical objects according to claim 2, wherein: 4. The spherical object according to claim 2, wherein the discharge hole has a plurality of holes arranged at a predetermined interval on the same circumference along the outer peripheral surface. Transport device. 5. The first atmosphere and the vortex flow are made of gas, and furthermore, a vacuum is arranged in a band shape on the outer peripheral surface of the discharge chamber so as to surround all of the plurality of holes. A vacuum chamber, wherein the vacuum chamber comprises an exhaust pump,
5. The apparatus according to claim 4, wherein the apparatus is configured to discharge the first atmosphere to the outside. 6. The inner tube is a porous tube made of a porous tube material formed so as to form a passage having a diameter slightly larger than the diameter of the spherical object inside. Item 3. A device for conveying spherical objects according to Item 3. 7. The tube according to claim 3, wherein the inner tube has a large number of through holes smaller than the diameter of the spherical object, and is formed to be able to pass through the first atmosphere. For transporting spherical objects. 8. The apparatus according to claim 3, wherein the inner tube is a tube formed of a mesh material capable of preventing the spherical object from flowing out. 9. The discharge chamber is a cylindrical tube formed so as to surround the inner tube, and an inner peripheral surface is formed to have a tapered surface that is enlarged toward the downstream side and formed so as to approach the outer peripheral surface. 3. The apparatus according to claim 2, wherein the spiral flow is formed so as to guide the spiral flow outward. 10. The spherical object according to claim 9, wherein said spiral flow is guided to the outside through a discharge hole provided at a downstream end of said tapered surface. Transport device. 11. The first atmosphere discharge portion is connected to a vicinity of an outlet of the supply pipe, is capable of flowing in and out of a fluid, and is a straight pipe portion made of a porous material forming a passage of the spherical object therein. An inner peripheral surface is enlarged toward the downstream side to form a tapered surface formed so as to approach the outer peripheral surface, and a tapered portion formed so as to guide the spiral flow to the outside; and at least the straight pipe 2. The apparatus for conveying a spherical object according to claim 1, further comprising a discharge chamber formed so as to surround the portion. 12. The spiral flow forming means includes: a tubular body disposed to form a spiral flow path outside the supply pipe; and a tangential line near an upstream end on an outer peripheral surface of the tubular body. A fluid supply means for supplying a fluid from a direction, wherein the fluid supply means blows fluid from a tangential direction of an outer periphery of the passage to form a spiral flow along the passage. The apparatus for conveying spherical objects according to claim 1, wherein: 13. The apparatus according to claim 12, wherein the spiral flow path has an injection hole at a downstream end. 14. The spiral flow passage is surrounded by an outer peripheral surface of a straight tubular inner tube and an inner peripheral surface of an outer tube, and has a straight portion formed to have an equal cross-sectional area; 13. The apparatus for conveying spherical objects according to claim 12, further comprising: an injection hole connected to the downstream end and disposed at a downstream end. 15. The spherical object is single crystal silicon,
2. The fluid according to claim 1, wherein the fluid is an inert gas.
2. The device for conveying spherical objects according to 2. 16. The apparatus according to claim 13, wherein the fluid is a gas forming a second atmosphere. 17. The apparatus according to claim 1, wherein the swirling flow forming means is configured to form a swirling flow of an inert gas controlled at a cooling temperature. 18. The method according to claim 18, wherein the second atmosphere supply unit is configured to:
2. The apparatus according to claim 1, further comprising pulse generating means for supplying the fluid as a pressure pulse, wherein the apparatus is configured to accelerate and discharge the spherical object. 19. A spiral flow forming step of flowing a carrier fluid from a tangential direction of the tubular flow path to form a spiral flow of the carrier fluid; A sphere-containing fluid supply step of supplying spheres together with a fluid forming an atmosphere, and the sphere-containing fluid is brought into contact with the spiral flow to guide the spheres so as to pass through a central portion, and No.
A first atmosphere discharging step of selectively sucking the atmosphere of the first atmosphere outward together with the spiral flow to discharge the first atmosphere; and a step of discharging the first atmosphere in the suction and discharging step to the spherical object discharged in the first atmosphere. A second atmosphere forming step of ejecting a second fluid forming a second atmosphere, accelerating the sphere, and sending the sphere together with the second fluid. Atmosphere conversion method. 20. A first reaction step of supplying a first reactive gas to a semiconductor sphere to perform a first reaction, and flowing a second gas as the carrier fluid from a tangential direction of a tubular flow path. And a spiral flow forming step of forming a spiral flow; and supplying the semiconductor spheres after the first reaction step together with the first reactive gas into a spiral of the spiral flow along a central axis. And supplying the semiconductor sphere-containing first reactive gas with the spiral flow to guide the spherical object so as to pass through a central portion, while supplying the first reactive gas to the spiral flow. Selectively sucking outward and discharging a first reactive gas; and ejecting a third gas toward the semiconductor sphere, accelerating the sphere, 20. The method according to claim 19, wherein the reaction is led to a reaction step. Atmosphere conversion method Jo thereof. 21. The method according to claim 20, wherein the second gas is an inert gas. 22. The method according to claim 21, wherein the second gas is the same gas as the third gas. 23. The first reaction step is a vapor phase growth step, wherein the second gas is an inert gas cooled below the reaction temperature of the first reactive gas, 21. The method according to claim 20, wherein the semiconductor spheres are cooled by contacting the semiconductor spheres with the swirling flow of the inert gas and replaced with the inert gas. 24. The method according to claim 23, wherein the second reaction step is a step of supplying a reactive gas. 25. The nitriding step in which the spherical object is spherical single-crystal silicon, and the first reaction step is configured to supply a nitrogen-containing gas controlled at a nitriding temperature, and performs nitrogen annealing. The spherical carrier according to claim 23, wherein the carrier fluid is a cooled inert gas, and the second reaction step is a step of supplying a gas at room temperature to cause a reaction. Atmosphere conversion method for objects.