JP2000353308A - Magnetic conversion element, thin film magnetic head and production thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnetic conversion element in which the heat radiation efficiency can be increased. SOLUTION: An MR(magnetoresistance effect) element 50 as a magnetic conversion element has a laminated body 5 produced by laminating an antiferromagnetic layer 51, pinned layer 52, nonmagnetic metal 53 and free layer 54. The laminated body 5 is formed on a heat radiating layer 6 consisting of a nonmagnetic material having high resistance. The heat radiating layer 6 has a larger surface area than the laminated body 5, and its thickness is >=0.5 nm and <=100 nm. The Joule's heat generated by the current passing the laminated body 5 is radiated through the heat radiating layer 6 having a large surface area, which suppresses the temp. increase in the MR element 50.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic transducer, and more particularly to a magnetic transducer having a heat radiation function, a magnetic head using the same, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, as the areal recording density of a hard disk drive has been improved, the performance of a thin film magnetic head has been required to be improved. As a thin film magnetic head, a recording head having an inductive magnetic transducer and a reproducing head having a magnetoresistive element (hereinafter also referred to as an MR (Magneto Resistive) element) which is one of the magnetic transducers are laminated. A composite type thin film magnetic head having a structure is widely used.

As MR elements, an AMR element using a magnetic film (AMR film) exhibiting an anisotropic magnetoresistive effect (AMR) and a giant magnetoresistive (GMR) effect are used. ), A GMR element using a magnetic film (GMR film).

A reproducing head using an AMR element is called an AMR head or simply an MR head, and a reproducing head using a GMR element is called a GMR head. The AMR head is used as a reproducing head having a surface recording density exceeding 1 gigabit / (inch) ² , and the GMR head is used as a reproducing head having a surface recording density exceeding 3 gigabit / (inch) ² .

Incidentally, as the GMR film, a "multilayer type (antiferro type)", an "induction ferri type", a "granular type", a "spin valve type" and the like have been proposed. Among these, the GMR film, which has a relatively simple structure, shows a large resistance change even in a weak magnetic field, and is considered preferable for mass production, is a spin valve type.

FIG. 34 is a side sectional view showing a schematic structure of a composite type thin film magnetic head (hereinafter simply referred to as a composite head) 200 using a spin valve type GMR film (hereinafter referred to as a spin valve film). is there. Composite head 200, for example, Al ₂ O ₃ · TiC has a base 201 formed by (AlTiC), on this substrate 201, for example, Al ₂ O ₃ (alumina) formed by the insulating layer 202 , A lower shield layer 203 made of a magnetic material is laminated. On the lower shield layer 203, for example, A
A lower shield gap layer 204 and an upper shield gap layer 206 made of l ₂ O ₃ or AlN (aluminum nitride) are laminated. Between the lower shield gap layer 204 and the upper shield gap layer 206, the laminated body 205 which is the above-described spin valve film is buried.

On the upper shield gap layer 206,
Upper shield layer 207 made of magnetic material (also serves as lower magnetic pole)
Are formed. The upper magnetic pole layer 210 is opposed to the upper shield layer 207 with the recording gap layer 208 made of, for example, Al ₂ O ₃ therebetween. A thin-film coil 211 is formed between the lower shield layer 207 and the upper magnetic pole layer 210 while being buried in the insulating layer 209.

[0008] The lower shield layer 203, the lower shield gap layer 204, the laminate 205 and the upper shield gap layer 206 constitute a reproducing head for reading information from the magnetic recording medium. The upper shield layer (also serving as a lower magnetic pole) 207, the write gap layer 208, the insulating layer 209, the upper magnetic pole layer 210, and the thin-film coil 211 constitute a recording head unit for writing information on a magnetic recording medium. The surface indicated by S in the drawing is a medium facing surface (air bearing surface: ABS) in which the composite head 200 faces a magnetic recording medium such as a hard disk.

Here, the structure of the laminated body 205 which is a spin valve film will be described with reference to FIGS. 35 and 36.
FIG. 35 is a cross-sectional view (that is, XXXV-XXXV cross-sectional view in FIG. 34) of the laminate 205 parallel to the medium facing surface S, and FIG. 36 is a cross-sectional view of the laminate 205 perpendicular to the medium facing surface S (that is, FIG. 34 is an enlarged view of the laminate 205)
It is. The spin valve film is basically made of, for example, PtMn.
(Platinum-manganese alloy) antiferromagnetic layer 251, for example, pinned layer 2 which is a magnetic layer made of Co (cobalt)
52, a nonmagnetic metal layer 253 made of, for example, Cu (copper);
For example, a free layer 254 made of NiFe (permalloy)
And a multilayer film in which four layers are sequentially laminated. When the pinned layer 252 and the antiferromagnetic layer 251 are laminated and heat-treated at, for example, 250 degrees Celsius, the pinned layer 252 is subjected to an exchange anisotropic magnetic field due to exchange coupling at the interface between the pinned layer 252 and the antiferromagnetic layer 251. Is fixed, for example, in the direction indicated by Y in the figure. Since the free layer 254 is separated from the antiferromagnetic layer 251 by the nonmagnetic metal layer 253, its magnetization direction is not fixed and changes with an external magnetic field.

The reproduction of information using such a spin valve film, that is, the detection of a signal magnetic field from a magnetic recording medium is performed as follows. First, the pinned layer 252,
A detection current (sense current), which is a DC constant current, flows through the nonmagnetic metal layer 253 and the free layer 254, for example, in a direction indicated by X in the drawing. Upon receiving a signal magnetic field from the magnetic recording medium, the direction of magnetization of the free layer 254 changes. The electric resistance changes depending on the relative angle between the magnetization direction of the free layer 254 and the (fixed) magnetization direction of the pinned layer 252, and information is detected as a voltage change accompanying the change.

Here, generally, the medium facing surface S of the MR element
The distance from to the opposite surface is MR height (MR-H)
is called. In the case of an MR element using a spin valve film, the distance from the medium facing surface S of the free layer to the opposite surface determines the MR height.

The reproduction track width Tw of the MR element is:
It is getting smaller with higher recording density. Accompanying this, the MR height of the MR element also tends to decrease. For example, when the reproduction track width of the MR element is 1 μm,
The height is 0.6 μm, whereas when the reproduction track width of the MR element is 0.5 μm, the MR height is 0.3 μm.
μm.

[0013]

As described above, the miniaturization of the MR element is progressing. However, with the miniaturization, the following problem occurs due to the heat generated in the MR element.
That is, the heat generated in the MR element is radiated to the upper and lower shield layers (shield layers 203 and 207 in FIG. 34) via the upper and lower shield gap layers. However, M
When the reproduction track width of the R element and the MR height become smaller,
The heat radiation area of the MR element (that is, the product of the reproduction track width and the MR height) is significantly reduced. Such heat generation of the MR element due to the reduction of the heat radiation area causes electromigration (a phenomenon in which metal atoms move in a conductor to form local voids) and interlayer diffusion. as a result,
There is a problem that the life of the MR element is shortened.

It should be noted that JP-A-6-223331 and JP-A-10-222816 disclose that layers around the MR element (such as a shield layer, an insulating layer, and a base) are made of a material having a high thermal conductivity. A technology for efficiently dissipating heat generated in an MR element has been disclosed. However, when the heat dissipation area of the MR element is reduced with the miniaturization of the MR element described above, even if the thermal conductivity of the layer around the MR element is increased, the improvement of the heat dissipation ability cannot be expected much.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a magnetic transducer, a thin-film magnetic head, and a method of manufacturing the same, which can enhance the heat radiation capability.

[0016]

A magnetic transducer according to the present invention includes a magneto-sensitive layer for sensing an external magnetic field and a heat radiation layer formed adjacent to the magneto-sensitive layer. The magneto-sensitive layer includes, for example, a magneto-resistance effect film whose electric resistance changes due to an external magnetic field. As the magnetoresistive film, for example, AM
There are an R film, a GMR film, a TMR film and the like. In addition, the term “adjacent” includes not only a state of direct contact but also a state of adjoining via another layer.

In the magnetic transducer of the present invention, the Joule heat generated by the current flowing through the magneto-sensitive layer passes through a heat radiation layer provided adjacent to the magneto-sensitive layer, and is transferred to members around the element by heat conduction and the like. Moving.

In the magnetic transducer of the present invention, it is desirable that the thickness of the heat radiation layer is 1 nm or more and 100 nm or less. When the thickness of the heat radiation layer is less than 1 nm, almost no heat radiation effect is observed. On the other hand, when the thickness of the heat radiation layer is larger than 100 nm, the positive and negative asymmetries of the output of the magnetic transducer become large.

In the magnetic transducer of the present invention, the heat radiation layer is formed of a non-magnetic metal film (for example, containing any of Zr, Bi, Ta, Pt, and Pd) having a higher resistance than the magneto-sensitive layer. You may. Since the heat dissipation layer has a high resistance, the detection current flowing in the magneto-sensitive layer is slightly diverted to the heat dissipation layer.

Further, in the magnetic transducer of the present invention, the area of the layer surface of the heat radiation layer may be larger than the area of the layer surface of the magneto-sensitive layer. The larger the surface area of the heat dissipation layer is, the larger the contact area between the heat dissipation layer and the magneto-sensitive layer and the contact area between the heat dissipation layer and an external member (such as a magnetic shield layer) are, and accordingly the heat dissipation efficiency is improved.

Further, in the magnetic transducer of the present invention, the distance from one end surface (on the side facing the external magnetic field) of the heat radiation layer to the opposite surface is equal to one distance of the magneto-sensitive layer (on the side facing the external magnetic field). You may comprise so that it may become larger than the distance from an end surface to the opposite surface.

Further, in the magnetic transducer of the present invention, an insulating layer may be provided between the magneto-sensitive layer and the heat radiation layer. The presence of the insulating layer between the magneto-sensitive layer and the heat radiation layer can suppress generation of a shunt of the detection current flowing in the magneto-sensitive layer to the heat radiation layer.

In the magnetic transducer of the present invention, the magneto-sensitive layer may be constituted by a magneto-resistance effect film whose electric resistance changes by an external magnetic field. In particular, the magnetoresistive film includes a magnetic separation layer, a soft magnetic layer formed adjacent to one surface of the magnetic separation layer, and whose magnetization direction is freely changed by an external magnetic field, and a magnetic separation layer on the other surface. The ferromagnetic layer may be composed of an adjacent ferromagnetic layer and an antiferromagnetic layer formed adjacent to a surface of the ferromagnetic layer that is opposite to a surface of the ferromagnetic layer that contacts the magnetic separation layer. When a magnetic field from a magnetic recording medium is applied, the direction of magnetization of the soft magnetic layer changes, and the electric direction is changed according to the change in the magnetization direction of the soft magnetic layer and the relative angle between the magnetization direction of the (fixed) ferromagnetic layer. The resistance changes, and a voltage change accompanying the change in the electric resistance is detected. Joule heat generated by the current flowing through the soft magnetic, magnetic separation layer and ferromagnetic layer moves from the heat dissipation layer to the outside. Note that the heat dissipation layer can be provided adjacent to the antiferromagnetic layer or the soft magnetic layer.

A thin-film magnetic head according to the present invention is a thin-film magnetic head provided with a magnetic transducer, wherein the magnetic transducer has any one of the structures described above.

In the thin-film magnetic head of the present invention, two magnetic shield layers may be provided so as to face each other with the magnetic transducer interposed therebetween and to shield the magnetic transducer magnetically. Joule heat generated by the current flowing through the magneto-sensitive layer of the magnetic transducer moves from the heat dissipation layer to one of the magnetic shield layers.

Further, in the thin film magnetic head of the present invention, at least one of the at least one layer includes magnetic pole portions which are magnetically connected to each other and whose portions facing the recording medium face each other via the gap layer. And two thin-film coils disposed between the two magnetic layers. When a current flows through the coil, a magnetic field is generated in the magnetic pole portion, and the magnetic field writes information on the magnetic recording medium.

The method of manufacturing a magnetic transducer according to the present invention is characterized in that the heat radiation layer and the magneto-sensitive layer are formed so as to be adjacent to each other. In the method for manufacturing a magnetic transducer of the present invention, a heat dissipation layer may be formed on a base, and a magneto-sensitive layer may be formed on the heat dissipation layer. According to this manufacturing method, a magnetic conversion element in which the heat dissipation layer and the magneto-sensitive layer are laminated on the base in this order can be obtained. Further, another heat dissipation layer may be further formed on the magneto-sensitive layer (formed on the heat dissipation layer). According to this manufacturing method, a magnetic conversion element in which a heat dissipation layer, a magnetically sensitive layer, and another heat dissipation layer are laminated in this order on a substrate is obtained. Alternatively, in the method for manufacturing a magnetic transducer of the present invention, a magneto-sensitive layer may be formed on a substrate, and a heat radiation layer may be formed on the magneto-sensitive layer. According to this manufacturing method, a magnetic conversion element in which the magneto-sensitive layer and the heat radiation layer are laminated on the base in this order can be obtained. The heat radiation layer can be formed, for example, by sputtering.

In the method for manufacturing a magnetic transducer according to the present invention, a step of forming an insulating layer between the heat radiation layer and the magneto-sensitive layer may be further provided. According to this manufacturing method, a magnetic transducer having a structure in which an insulating layer is interposed between the heat radiation layer and the magneto-sensitive layer is obtained. The insulating layer can be formed, for example, by oxidizing the surface of the heat radiation layer.

A method of manufacturing a thin-film magnetic head according to the present invention is a method of manufacturing a thin-film magnetic head having a magnetic transducer, wherein the step of forming the magnetic transducer is performed by any one of the above-described magnetic transducers. This is performed using a manufacturing method.

According to the method of manufacturing a thin film magnetic head of the present invention,
A step of forming a first magnetic shield layer, a step of forming a first shield gap layer on the first magnetic shield layer, and a step of forming a magnetic transducer on the first shield gap layer Forming a second shield gap layer on the magnetic transducer, and forming a second magnetic shield layer on the second shield gap layer,
The step of forming the magnetic transducer may be performed using any one of the above-described methods for manufacturing a magnetic transducer.

[0031]

Embodiments of the present invention will be described below in detail with reference to the drawings.

[First Embodiment] Referring to FIGS. 1 to 22, an MR element as a magnetic transducer according to a first embodiment of the present invention and a thin-film magnetic head using the same will be described. The composite head will be described.

Configuration of MR Element and Composite Head FIG. 1 is a cross-sectional view illustrating a basic configuration of a composite head 100 according to the first embodiment. The composite head 100 has a recording head unit 101 for recording information on a magnetic recording medium such as a hard disk, and a reproducing head unit 102 for reproducing information on a magnetic recording medium. Composite head 10
The one end surface (left end surface in FIG. 1) 0 is a medium facing surface (or air bearing surface: ABS) S facing the magnetic recording medium, and is one of the “surface facing the external magnetic field” in the present invention. This corresponds to a specific example. In FIG. 1, the moving direction of the magnetic recording medium is indicated by an arrow Z, and the track width direction of the magnetic recording medium is indicated by an arrow X. The direction in which the magnetic recording medium faces the composite head 100 is indicated by an arrow Y.

The composite head 100 is made of, for example, Al ₂ O _3.
It has a substrate 1 made of TiC (Altic).
An insulating layer 2 made of, for example, Al ₂ O ₃ (alumina) and having a thickness of 2 to 10 μm, and a lower shield layer 3 made of a magnetic material such as NiFe (permalloy) having a thickness of 1 to ₃ μm are formed on the base 1. It is laminated. On the lower shield layer 3, Al ₂ O ₃ or AlN (aluminum nitride)
A lower shield gap layer 4 and an upper shield gap layer 8 having a film thickness of 10 to 100 nm are formed.

In the present embodiment, between the lower shield gap layer 4 and the upper shield gap layer 8, an MR element 50 (FIG. 2) including a laminated body 5 as a spin valve film is buried. On the upper shield gap layer 8, Ni-
An upper shield layer and lower magnetic pole (hereinafter, referred to as an upper shield layer) 9 having a thickness of 1 to 4 μm, which is made of a magnetic material such as Fe (permalloy) and is used for both the read head unit 102 and the write head unit 101, is formed. Have been.

On the upper shield layer 9, for example, Al ₂ O
A recording gap layer 10 having a thickness of 0.1 to 0.5 μm made of an insulating film such as ₃ is formed. On the recording gap layer 10, a first layer thin film coil 12 (2 to 3 μm in thickness) for a recording head is interposed via a photoresist layer 11 having a thickness of 1.0 to 5.0 μm. A covering photoresist layer 13 is formed. On the photoresist layer 13, a second-layer thin-film coil 14 (thickness: 2 to 3 μm) and a photoresist layer 15 covering the second-layer thin film coil 14 are formed. In this embodiment, the example in which the number of the thin film coils is two is described. However, the total number of the thin film coils may be one or three or more.

An upper magnetic pole 16 having a thickness of about 3 μm and made of a magnetic material for a recording head, such as NiFe (permalloy) or FeN, which is a high saturation magnetic flux density material, is provided so as to cover the photoresist layers 11, 13, and 15. Is formed.
Although not shown in FIG. 1, the upper magnetic pole 16 is covered with an overcoat layer made of, for example, Al ₂ O ₃ and having a thickness of 20 to 30 μm (the overcoat layer 17 in FIG. 12A).

The lower shield layer 3, the lower shield gap layer 4, the MR element 50, the upper shield gap layer 8, and the upper shield layer 9 constitute a reproducing head for detecting information on a magnetic recording medium (ie, a signal magnetic field from the magnetic recording medium). Part 10
2. The reproducing head unit 102 detects a change in electric resistance generated in the laminated body 5 by a signal magnetic field from a magnetic recording medium. This “signal magnetic field from the magnetic recording medium” corresponds to a specific example of “external magnetic field” in the present invention.

Further, an upper magnetic shield portion (also a lower magnetic pole)
The recording gap layer 10, the coils 12, 14 and the upper magnetic pole 16 constitute a recording head unit 101 for writing information on a magnetic recording medium. The recording head unit 101 causes upper and lower magnetic poles 16, 9 by the current flowing through the coils
A magnetic flux generated in the vicinity of the recording gap layer 10 between the magnetic poles 16 and 9 magnetizes the magnetic layer of the magnetic recording medium.

The lower shield layer 3 corresponds to a specific example of “first shield layer” in the present invention. The upper shield layer 9 corresponds to a specific example of “second shield layer” in the present invention. The upper shield layer 9 and the lower shield layer 3 correspond to a specific example of “two magnetic shield layers” in the present invention. The shield gap layers 4 and 8 correspond to specific examples of “first shield gap layer” and “second shield gap layer” in the present invention, respectively. The lower magnetic pole (upper shield layer) 9 and the upper magnetic pole 16 correspond to a specific example of “two magnetic layers” in the present invention, and include the lower magnetic pole 9, the upper magnetic pole 16, the thin film coils 12 and 14, and the recording gap layer 10. The portion corresponds to a specific example of “inductive magnetic transducer” in the present invention.

FIG. 2 is a diagram showing the MR element 50 including the laminated body 5 and shows a cross section (II-II cross section in FIG. 1) of the composite head 100 parallel to the medium facing surface S. The MR element 50 of the present embodiment has a high resistance non-magnetic metal (Zn, B) formed on the lower shield gap layer 4.
i, Ta, Pt, Pd, etc.) and a laminate 5 formed on the heat radiation layer 6. The laminated body 5 has an antiferromagnetic layer 51 made of, for example, PtMn (platinum-manganese), for example, a pinned layer 52 made of a magnetic layer made of Co (cobalt), for example, Cu, on the heat radiation layer 6.
A nonmagnetic metal layer 53 made of (copper), for example, a free layer 54 made of NiFe (permalloy) is sequentially stacked. On the free layer 54, a protective layer 58 made of, for example, Ta is formed.

When the pinned layer 52 and the antiferromagnetic layer 51 are stacked and heat-treated at, for example, 250 ° C., the exchange coupling at the interface between the pinned layer 52 and the antiferromagnetic layer 51 causes the magnetization direction of the pinned layer 52 to change. Is fixed. In the present embodiment, the direction of magnetization of pinned layer 52 is fixed in the Y direction in FIG. In FIG. 2, the width of the stacked body 5 (read width of the MR element 50) corresponding to the track width of a magnetic recording medium (not shown) is represented by a reproduction track width Tw.
And

On both sides of the stacked body 5 in the reproduction track width direction in FIG. 2, bias application films are provided for aligning the magnetization directions of the free layer 54 to suppress the generation of noise (so-called Barkhausen noise). In the present embodiment, the bias applying film is formed of the ferromagnetic layers 55a, 55 for bias.
5b and anti-ferromagnetic layers for bias 56a and 56b laminated on the ferromagnetic layers for bias 55a and 55b. The exchange coupling at the interface between the bias ferromagnetic layers 55a and 55b and the bias antiferromagnetic layers 56a and 56b generates a bias magnetic field for the free layer 54. In the present embodiment,
It is assumed that a bias magnetic field in the X direction in FIG. 2 is applied to the free layer 54.

Here, the MR element 50 corresponds to a specific example of “magnetic conversion element” in the present invention. The laminate 5 corresponds to a specific example of the “magnetic layer” in the present invention, and the heat radiation layer 6 corresponds to a specific example of the “heat radiation layer” in the present invention. Further, the antiferromagnetic layer 51 corresponds to a specific example of the “antiferromagnetic layer” in the present invention, and the pinned layer 52 corresponds to a specific example of the “ferromagnetic layer” in the present invention. The nonmagnetic metal layer 53 corresponds to a specific example of the “magnetic separation layer” in the present invention, and the free layer 54 corresponds to the “soft magnetic layer” in the present invention.
Corresponds to one specific example.

FIG. 3 is a sectional view of the laminate 5 taken along the line III-III in FIG.
FIG. 3 is a sectional view taken along a line III, and shows a section perpendicular to a medium facing surface S. In the medium facing surface S of the multilayer body 5, one end (the left end in FIG. 3) of each of the antiferromagnetic layer 51, the pinned layer 52, the nonmagnetic metal layer 53, and the free layer 54 coincides with the medium facing surface S. . Further, the medium facing surface S of the laminate 5
The end face on the opposite side (the right end face in FIG. 3) is an end face parallel to the medium facing surface S. The distance from the medium facing surface S of the free layer 54 to the opposite surface corresponds to the MR height.

FIG. 4 shows the planar shape and the relative positional relationship between the laminated body 5 and the heat radiation layer 6, and is a view of the MR element 50 as seen from the direction of arrow IV in FIG. As shown in FIG. 4, the area of the layer surface of the heat radiation layer 6 is larger than the area of the layer surface of the laminate 5. Specifically, the distance L1 from the medium facing surface S to the opposite surface of the heat radiation layer 6 is longer than the distance L2 from the medium facing surface S to the opposite surface of the multilayer body 5. The length W of the heat radiation layer 6 in the reproduction track width Tw direction is longer than the reproduction track width Tw. The thickness of the heat radiation layer 6 is, for example, 1 n.
m or more and 100 nm or less.

Here, the distance L1 from the medium facing surface S to the opposite surface of the heat radiation layer 6 is 0.8 μm, and the distance L2 from the medium facing surface S to the opposite surface of the laminate 5 is 0.3 μm. Also, the length W of the heat radiation layer 6 in the reproduction track width Tw direction.
Is 1.0 μm and the reproduction track width Tw is 0.5 μm
It is.

The method for manufacturing a composite head 100 Next, with reference to FIGS. 5 to 19, the composite head 1
00 will be described. 5 to 11 and FIG. 12A show cross sections perpendicular to the medium facing surface. 12 (B) and FIGS. 13 to 1
Reference numeral 8 denotes an enlarged cross section of a portion including the MR element 50 of the composite head 100 parallel to the medium facing surface. FIG.
9 shows a plan configuration of the composite head 100.

In the manufacturing method according to the present embodiment, first,
As shown in FIG. 5, for example, on the substrate 1 made of Al ₂ O ₃ · TiC (AlTiC), for example, Al ₂ O ₃ insulating layer 2 made of (alumina), deposited to a thickness of approximately 2~10μm I do.

Next, a lower shield layer 3 for a reproducing head made of a magnetic material is formed to a thickness of 1 to 3 μm on the insulating layer 2 by, for example, a plating method. Next, on the lower shield layer 3, for example, Al ₂ O ₃ or AlN
A lower shield gap layer 4 as an insulating layer is formed by sputtering to a thickness of 00 nm.

Next, as shown in an enlarged manner in FIG. 13, Zr, Bi, Ta, P
1-10 high-resistance nonmagnetic metals containing either t or Pd
A heat radiation layer forming film 6 'for forming the heat radiation layer 6 is formed by sputtering to a thickness of 0 nm.

Next, as shown in FIGS. 6 and 14,
A photoresist pattern 6a is formed at a predetermined position on the heat radiation layer forming film 6 ', and the heat radiation layer forming film 6' is etched using the photoresist pattern 6a as a mask to form a pattern of the heat radiation layer 6.

Next, as shown in FIG. 7, a laminated film 5 'for forming the laminated body 5 is formed on the heat radiation layer 6 to a thickness of several tens nm. Specifically, as shown in FIG. 15 on an enlarged scale, the antiferromagnetic layer 51 and the pinned layer 5
2. Non-magnetic metal layer 53, free layer 54, and protective layer 58
Are laminated in this order by a sputtering method to form a laminated film 5 '.

Here, the antiferromagnetic layer 51 is made of, for example, PtM
It is formed to a thickness of about 20 nm using a material such as n (platinum-manganese) or NiMn (nickel-manganese).
The pinned layer 52 is formed to a thickness of about 2 nm using a material such as Co (cobalt). Non-magnetic metal layer 53
Is formed to a thickness of 2.5 nm using a material such as Cu (copper). The free layer 54 is formed to a thickness of 8 nm using a material such as NiFe (permalloy). In FIG. 10, the antiferromagnetic layer 51, the pinned layer 52,
The thicknesses of the nonmagnetic metal layer 53, the free layer 54, and the protective layer 58 are exaggerated as compared with the thicknesses of the other layers.

The protective layer 58 is made of Ta, Nb, Hb, Zr,
Hf, Cu, Al, Rh, Ru, Pt, RuRhMn,
A single-layer film of one material selected from PtMn, PtMnRh and TiW, or Ta / PtMn, Ta / C
u, Ta / Al, Ta / Ru, TiW / Cu, TiW /
One two-layer film selected from Rh and TiW / Ru is used (note that “/” between elements indicates that both elements are stacked).

Next, as shown in FIGS. 8 and 16,
A photoresist pattern 6b is selectively formed on the stacked film 5 'at a position where the stacked body 5 is to be formed. At this time, the photoresist pattern 6b has, for example, a T-shaped cross section so that lift-off described later can be easily performed.

Using the photoresist pattern 6b as a mask, the laminated film 5 'is vertically etched by an ion milling method using, for example, Ar (argon).
A pattern of the laminate 5 including the antiferromagnetic layer 51, the pinned layer 52, the nonmagnetic metal layer 53, and the free layer 54 is formed.

Next, as shown in FIG. 17, the ferromagnetic layers 55a and 55b for bias and the antiferromagnetic layers 56a and 56b for bias for applying a bias magnetic field to the free layer 54 are provided on both sides of the laminated body 5. Laminate. Further, the lead layers 7a, 7b are formed on the anti-ferromagnetic layers 56a, 56b for bias.
It is formed to a thickness of about 00 to 200 nm. The lead layer 7 is made of, for example, a laminated film of Ta (tantalum) and Au (gold), Ti.W (titanium-tungsten alloy) and Ta.
Is formed as a laminated film.

The bias antiferromagnetic layers 56a and 56
b, and the material of the antiferromagnetic layer 51 of the laminate 5 include:
PtMn having a composition of 47 to 52 at% of Pt and 48 to 53 at% of Mn (most preferably 48 at% of Pt and 52 at% of Mn), 33 to 52 at% of Pt, and 45 to 57 at of Mn.
%, Rh 0 to 17 at% (most preferably Pt
PtMnR of 40 at%, Mn 51 at%, Rh 9%)
h, Ru0-20 at%, Rh0-20 at%, Mn7
5 to 85 at% composition (most preferably Ru3at
%, Rh15at%, Mn82at%) of RuRhMn
You can choose from:

Next, by a lift-off process, the photoresist pattern 6b and the deposit D
(The materials for the bias ferromagnetic layer, the bias antiferromagnetic layer, and the lead conductor layer) are removed.

Next, as shown in FIG. 9 and FIG.
An upper shield gap layer 8 made of an insulating film such as AlN is formed to a thickness of about 10 to 100 nm so as to cover the lower shield gap layer 4 and the laminated body 5. Buried inside.

Next, on the upper shield gap layer 8, an upper shield layer / lower magnetic pole (hereinafter, referred to as an upper shield layer) 9 made of a magnetic material and used for both the read head and the write head is approximately one. It is formed to a thickness of 4 μm.

Next, as shown in FIG. 10, a recording gap layer 10 made of an insulating film, for example, an Al 2 O 3 film is formed on the upper shield layer 9 to a thickness of 0.1 to 0.5 μm.
On this recording gap layer 10, a photoresist layer 11 for determining the throat height is formed in a predetermined pattern with a thickness of about 1.0 to 2.0 μm. Next, a first-layer thin film coil 12 for an inductive recording head is formed on the photoresist layer 11 to a thickness of 2 to 3 μm. Next, a photoresist layer 13 is formed in a predetermined pattern so as to cover the photoresist layer 11 and the thin film coil 12. Next, a second-layer thin-film coil 14 is formed on the photoresist layer 13 to a thickness of 2 to 3 μm. next,
A photoresist layer 15 is formed in a predetermined pattern so as to cover the photoresist layer 13 and the coil 14.

Next, as shown in FIG.
At a position behind (to the right in FIG. 11) behind the recording gaps 2 and 14, the recording gap layer 10 is partially etched to form an opening 10a in order to form a magnetic path. Next, the recording gap layer 10, the opening 10a, the photoresist layer 1
The upper magnetic pole 16 made of a magnetic material for a recording head, for example, NiFe (permalloy) or FeN, which is a high saturation magnetic flux density material, is covered with a magnetic material for the recording head by about 3 μm.
A pattern is formed to a thickness of m. The upper magnetic pole 16 is in contact with the upper shield layer (lower magnetic pole) 9 at the opening 10 a behind the coils 12 and 14 and is magnetically connected thereto.

Next, as shown in FIG. 12A, the recording gap layer 10 and the upper shield layer (lower magnetic pole) 9 are etched by ion milling using the upper magnetic pole 16 as a mask. Next, on the upper magnetic pole 16, for example, Al ₂
The overcoat layer 17 made of O ₃ is 20 to 30 μm
To a film thickness of

Next, in order to fix (pin) the direction of the magnetic field of the pinned layer 52, the antiferromagnetic layer 51 and the pinned layer 5 are fixed.
2 and a bias antiferromagnetic layer 56a, 5b for generating a bias magnetic field.
A process for causing exchange coupling at each interface between the bias ferromagnetic layers 55a and 55b is performed.

The temperature at which exchange coupling can occur at the interface between the antiferromagnetic layer 51 and the pinned layer 52 (blocking temperature) depends on the temperature at the interface between the antiferromagnetic layers 56a, 56b for bias and the ferromagnetic layers 55a, 55b for bias. The temperature at which exchange coupling can occur is
Desirably, they are different from each other. If the former is hotter than the latter, use a chamber with a magnetic field generator, etc.
The composite head 100 is connected to the former (the antiferromagnetic layer 51 and the
2 blocking temperature). Then, the composite head 100 is gradually cooled, and the antiferromagnetic layer 51 is cooled.
And when the blocking temperature of the pinned layer 52 is reached,
A magnetic field in a predetermined magnetization direction (Y direction in FIG. 2 or 3) is applied to the pinned layer 52. Thereby, the pinned layer 52
Is fixed.

Then, the temperature of the composite head 100 is controlled by the bias antiferromagnetic layers 56a and 56b and the bias ferromagnetic layer 5a.
When the temperature drops to the blocking temperature of 5a, 55b, a magnetic field in a predetermined magnetization direction (X direction in FIG. 2 or 3) is applied to the ferromagnetic layers for bias 55a, 55b.
Thereby, the magnetization directions of the bias ferromagnetic layers 55a and 55b are fixed. The bias ferromagnetic layers 55a and 55b whose magnetization directions are fixed form the bias ferromagnetic layers 5a and 55b.
A bias magnetic field is applied to the laminated body 5 sandwiched between 5a and 55b. If the blocking temperatures of the antiferromagnetic layer 51 and the pinned layer 52 are lower than the blocking temperatures of the biasing antiferromagnetic layers 56a and 56b and the biasing ferromagnetic layers 55a and 55b, the above-described operation order is reversed. become.

Finally, the slider is machined to form the medium facing surface S of the recording head and the reproducing head.
The composite head 100 is completed. As shown in FIG. 12B, a structure in which the side walls of the upper magnetic pole 16, the write gap layer 10, and a part of the upper shield layer (lower magnetic pole) 9 are vertically formed in a self-aligned manner is a trim. ) Called structure. According to this trim structure, it is possible to prevent the effective track width from increasing due to the spread of the magnetic flux generated when writing in a narrow track.

FIG. 19 is a plan view of the composite head manufactured as described above. In FIG. 19, the overcoat layer 17 is omitted. 5 to 11.
FIG. 12A shows a cross section taken along line AA ′ in FIG. FIGS. 12B and 13 to 18 show cross sections taken along the line BB 'in FIG.

Operation of Composite Head Next, the operation (reproduction operation) of the composite head 100 thus configured will be described.

2 and 3, the magnetization direction of the pinned layer 52 is changed in the Y direction in the drawing by the exchange anisotropic magnetic field due to the exchange coupling at the interface between the pinned layer 52 and the antiferromagnetic layer 51 of the laminate 5. Fixed. The magnetization direction of the free layer 54 is determined by the bias ferromagnetic layers 5 arranged on both sides of the stacked body 5.
By the bias magnetic fields generated by 5a and 55b, they are aligned in the track width direction (X direction in the figure).

A detection current (sense current), which is a DC constant current, flows in the pinned layer 52, the nonmagnetic metal layer 53, and the free layer 54 through the lead layers 7a and 7b in the X direction in the figure. Upon receiving a signal magnetic field from the magnetic recording medium, the magnetization direction of the free layer 54 changes. The electric resistance changes according to the relative angle between the magnetization direction of the free layer 54 and the (fixed) magnetization direction of the pinned layer 52, and the change in the electric resistance is detected as a voltage change.

At this time, Joule heat is generated by the detection current flowing through the laminate 5. This Joule heat
The current is mainly generated when a current flows through the pinned layer 52, the nonmagnetic metal layer 53, and the free layer 54. This Joule heat moves to the heat dissipation layer 6 through the interface between the laminated body 5 and the heat dissipation layer 6 by heat transfer, and further passes through the interface between the heat dissipation layer 6 and the lower shield gap layer 4 so that the lower shield gap 4 ( And the lower shield layer 3) thereunder.

In this embodiment, since the heat radiation layer 6 made of a material having a relatively high thermal conductivity is adjacent to the laminate 5, the heat in the laminate 5 can easily move to the heat radiation layer 6. Further, since the area of the layer surface of the heat radiation layer 6 is larger than the area of the layer surface of the laminate 5, a wider boundary surface (the laminate 5 and the heat radiation layer 6) is formed.
Boundary surface, heat radiation layer 6 and lower shield gap layer 4
Transfer of heat takes place at the boundary surface of the two. Therefore, the MR element 5
The heat radiation capacity of the device is improved.

Since the detection of the signal magnetic field is performed based on the fluctuation of the magnetization direction in the free layer 54, in order to cope with the high density of the magnetic recording medium, the MR element 50 is adjusted to the track width of the magnetic recording medium. Reproduction track width Tw and M
What is necessary is just to make R height small. In the present embodiment, even if the free layer 54 is made smaller, the heat radiation layer 6 can secure a heat radiation area (the area of the boundary surface where heat moves). That is, the heat dissipation capability of the MR element can be improved while supporting high-density recording.

[0077] heat dissipation layer effect diagram 20 is the MR element 50 of this embodiment electric current of 4～8MA, is representative of the result of measurement of the temperature rise of the MR element 50 at that time. The thickness of the heat radiation layer 6 is 10
nm, and the length of the heat radiation layer 6 in the reproduction track width direction is 1.0 μm. The distance from the medium facing surface S of the heat radiation layer 6 to the opposite surface is 0.8 μm, which is longer than the distance from the medium facing surface S of the multilayer body 5 to the opposite surface by 0.5 μm. FIG. 20 also shows, for comparison, experimental data of the MR element without the heat radiation layer 6.

As shown in FIG. 20, the provision of the heat radiation layer 6 between the laminate 5 and the lower shield gap layer 4 allowed the temperature rise to be reduced by about 40%.

[0079] Optimal thickness diagram of the heat dissipation layer 21 is a characteristic diagram showing the thickness of the heat dissipation layer 6, the relationship between the temperature rise of the MR element. In FIG. 21, the temperature rise is expressed as a relative value to the temperature rise (° C.) when the thickness of the stacked body 5 is 0.5 nm. In addition,
In FIG. 21, a direct current of 6 mA flows through the MR element 50.

FIG. 21 shows the read output (voltage output) of the MR element 50 when the magnetic field (S and N) from the magnetic recording medium is switched with the composite head 100 facing the magnetic recording medium. ) Plus and minus asymmetry (asymmetry) are shown. More specifically, as shown in FIG. 22, the positive peak value V1 and the negative peak value V2 (V1, V2
Asymmetry Asym)
Is defined as Asym = (V1−V2) / V1 × 100. Generally, in an MR element, it is required to suppress the asymmetry within a range of ± 10%.

As shown in FIG. 21, when the thickness of the heat radiation layer 6 is less than 1 nm, the heat radiation effect of the MR element 50 is not so much seen. On the other hand, if the thickness of the heat radiation layer 6 is larger than 100 nm, the asymmetry exceeds 10% (this is considered to be the effect of the magnetic field generated by the detection current shunted to the heat radiation layer 6). Therefore, it is desirable that the thickness of the heat radiation layer 6 be 1 nm to 100 nm.

As described above, according to the present embodiment, since the heat radiation layer 6 is formed adjacent to the laminated body 5 of the MR element 50, the MR element 5 is adapted to the track width of the magnetic recording medium.
At the same time as reducing the MR height of 0 or the like, it is possible to secure the area of the heat radiation layer 6 as much as necessary for heat radiation. That is, at the same time as the density of the magnetic recording medium is increased,
The heat radiation ability can be increased.

The Joule heat of the MR element 50 is particularly large at the center of the laminate 5 in the track width direction. In the present embodiment, the distance from the medium facing surface S to the opposite surface of the heat radiation layer 6 is increased, so that the length of the heat radiation layer 6 in the reproduction track width direction is increased as compared with the case where the length of the heat radiation layer 6 is increased. The heat generated at the center can be efficiently dissipated.

Further, since the heat dissipation layer 6 is formed of a non-magnetic metal film having a higher resistance than that of the laminated body 5, the detection current shunts to the heat dissipation layer 6 is relatively small.

[Second Embodiment] Next, a second embodiment of the present invention will be described.
The MR element according to the embodiment will be described. The second embodiment is different from the first embodiment in that the heat radiation layer is provided on the laminate, and the other configuration is the same as the first embodiment. Hereinafter, only differences from the first embodiment will be described, and other description will be omitted.

FIG. 23 shows a cross-sectional structure of the laminated body 5 and the heat radiation layer 61 in the MR element of the second embodiment, and shows a cross section perpendicular to the medium facing surface S (that is, the first embodiment). (Corresponding to FIG. 3). The heat radiation layer 61 is formed on the laminate 5. Heat dissipation layer 61
Is made of a high-resistance nonmagnetic metal (Zn, Bi, Ta, Pt, Pd, etc.), similarly to the heat radiation layer 6 of the first embodiment. The area of the layer surface of the heat radiation layer 61 is the same as that of the laminate 5.

FIG. 24 shows one step in the method of manufacturing the MR element according to the second embodiment. As shown in FIG. 24, as in the first embodiment, an insulating layer 2, a lower shield layer 3, and a lower shield gap layer 4 are stacked on a base 1. Further, on the lower shield gap layer 4, a laminated film 5 'for forming the laminated body 5 is formed. The configuration of the laminated film 5 'is the same as in the first embodiment.

Next, on the laminated film 5 ', a heat radiation layer forming film 61' made of a high-resistance nonmagnetic metal (Zn, Bi, Ta, Pt, Pd) is sputtered for 1 nm to 100 nm.
m. Then, a photoresist pattern 6b is formed at a predetermined location on the heat radiation layer forming film 61 ', and etching is performed using the photoresist pattern 6b as a mask to form the heat radiation layer 61 as shown in FIG. In this way, the structure shown in FIG. 23 in which the heat dissipation layer 61 is formed on the laminate 5 can be formed. Subsequent steps are the same as those in the first embodiment. That is,
The composite head is completed by the same steps as those shown in FIGS. 5 to 12 in the first embodiment.

According to the present embodiment, the heat generated in MR element laminate 5 moves to upper shield gap layer 8 and upper shield layer 9 through heat radiation layer 61, so that the heat radiation ability can be improved. The same effect as in the first embodiment can be obtained.

[Third Embodiment] Next, a third embodiment of the present invention will be described.
The MR element according to the embodiment will be described. The third embodiment is different from the first embodiment in that the laminated body is sandwiched between two heat dissipation layers, and the other configurations are the same as the first embodiment. Hereinafter, only differences from the first embodiment will be described, and other description will be omitted.

FIG. 25 shows a cross-sectional structure of the laminated body and the heat radiation layer in the MR element of the third embodiment, and shows a cross section perpendicular to the medium facing surface S (that is, the cross section according to the first embodiment). (A cross section corresponding to FIG. 3). In the present embodiment, a first heat dissipation layer 62 is formed below the laminate 5, and a second heat dissipation layer 63 is formed above the laminate 5. Note that the first and second heat radiation layers 62 and 63 correspond to the first
As in the heat radiation layer 6 of the embodiment, 1 to 100 n of a high-resistance nonmagnetic metal (Zn, Bi, Ta, Pt, Pd, etc.)
m. The area of the layer surface of the first heat dissipation layer 62 is the same as the area of the heat dissipation layer 6 (FIG. 4) of the first embodiment, and is larger than the area of the layer surface of the laminate 5. On the other hand, the area of the layer surface of the second heat radiation layer 63 is the same as that of the laminate 5.

FIG. 26 shows one step in the method of manufacturing the MR element according to the third embodiment. As shown in FIG. 26, as in the first embodiment, an insulating layer 2, a lower shield layer 3, and a lower shield gap layer 4 are stacked on a base 1. Further, in the same manner as in the first embodiment, the pattern of the first heat radiation layer 62 made of a high-resistance nonmagnetic metal (Zn, Bi, Ta, Pt, Pd) is formed on the lower shield gap layer 4. To form

Next, a laminated film 5 ′ for forming the laminated body 5 is formed so as to cover the first heat radiation layer 62 and the lower shield gap layer 4. The configuration of the laminated film 5 'is the same as in the first embodiment. Further, a high-resistance nonmagnetic metal (ZZ) for forming the second heat dissipation layer 63 on the laminated film 5 'is formed.
n, Bi, Ta, Pt, Pd)
3 ′ is laminated by sputtering to a thickness of 1 nm to 100 nm. Then, the heat radiation layer 6 of the heat radiation layer forming film 63 'is formed.
A photoresist pattern 6b is formed at a position where the third heat radiation layer 63 is to be formed, and etching is performed using this photoresist pattern as a mask.
To form In this way, the structure shown in FIG. 25 in which the laminate 5 is sandwiched between the two heat radiation layers 62 and 63 can be formed. Subsequent steps are the same as those in the first embodiment. That is, the composite head is completed by the same steps as those shown in FIGS. 5 to 12 in the first embodiment.

According to the present embodiment, the heat generated in MR element stack 5 passes through upper and lower heat radiation layers 62 and 63, and thus forms upper shield gap layer 8, upper shield layer 9, lower shield gap layer 4 and Move to lower shield layer 3.
Therefore, an effect that the heat radiation ability is further improved as compared with the first embodiment can be obtained.

[Fourth Embodiment] Next, a fourth embodiment of the present invention will be described.
The MR element according to the embodiment will be described. The MR element of the present embodiment is different from the first embodiment in that an insulating layer is provided between the antiferromagnetic layer and the heat dissipation layer, and the other configuration is the same as that of the first embodiment. is there. Hereinafter, only differences from the first embodiment will be described, and other description will be omitted.

FIG. 27 shows a cross-sectional structure of the laminated body and the heat radiation layer in the MR element of the fourth embodiment, and shows a cross section perpendicular to the medium facing surface S (that is, according to the first embodiment). (A cross section corresponding to FIG. 3). In the present embodiment, an insulating layer 65 for preventing the detection current from flowing to the heat dissipation layer 6 is formed on the surface of the heat dissipation layer 6 on the side of the laminate 5. The insulating layer 65 is an oxide layer formed by subjecting the surface of the heat radiation layer 6 made of the above-described high-resistance nonmagnetic metal to plasma oxidation. The thickness of the insulating layer 65 is 2-3.
Desirably, it is 0 nm. This is because when the thickness of the insulating layer 65 is less than 2 nm, it is difficult to prevent the detection current from shunting to the heat radiation layer 6, and when the thickness of the insulating layer 65 is more than 30 nm, the insulating layer 65 is not strong. From the magnetic layer 51 to the heat dissipation layer 6
This is because heat transfer during the heat transfer is hindered. Note that the insulating layer 65 may be an oxide film such as Al ₂ O ₃ or SiO ₂ .

FIG. 28 to FIG. 30 show a method of manufacturing the MR element of the fourth embodiment. First, FIG.
As shown in (1), an insulating layer 2, a lower shield layer 3, and a lower shield gap layer 4 are stacked on a base 1, as in the first embodiment. On the lower shield gap layer 4, a high-resistance nonmagnetic metal (Zn, Bi, Ta,
A heat radiation layer forming film 6 ′ made of Pt, Pd) is formed. Next, an insulating layer 65 having a thickness of 2 to 30 nm is formed by performing plasma oxidation on the surface of the heat radiation layer forming film 6 '.

Next, as shown in FIG. 29, a photoresist pattern 6 is formed on a predetermined portion of the heat radiation layer forming film 6 '.
Form c. When the insulating layer 65 and the heat dissipation layer forming film 6 ′ are etched, the heat dissipation layer 6 having the insulation layer 65 on the upper surface is formed. Next, as shown in FIG.
5 and the lower shield gap layer 4.
Is formed to form a laminated film 5 '. The configuration of the laminated film 5 'is the same as in the first embodiment. Subsequent steps are the same as those in the first embodiment. That is, the composite head is completed by the same steps as those shown in FIGS. 5 to 12 in the first embodiment.

According to the present embodiment, the heat generated by the MR element is radiated to lower shield gap layer 4 and lower gap layer 3 through heat radiation layer 6 having a large surface area. The same effect as that of the first embodiment can be obtained in that the required heat radiation capability can be secured. Further, an insulating layer 6 is provided between the laminate 5 and the heat radiation layer 6.
Because of the interposition of 5, the detection current can be prevented from being diverted to the heat radiation layer 6, and the effect of reducing wasteful power consumption can be obtained.

[Fifth Embodiment] Next, a fifth embodiment of the present invention will be described.
An embodiment will be described. The laminated body of the MR element according to the present embodiment is different from the first embodiment in that the surface opposite to the medium facing surface is inclined with respect to the medium facing surface, and other configurations are the same as those in the first embodiment. Is the same as Hereinafter, only differences from the first embodiment will be described, and other description will be omitted.

FIG. 31 shows a cross-sectional structure of the laminated body 105 of the MR element according to the fifth embodiment, and is a cross section perpendicular to the medium facing surface S (that is, FIG. 3 according to the first embodiment).
(Corresponding to the cross section). On the lower shield gap layer 4, a high-resistance nonmagnetic metal (Zn, Bi, Ta,
A heat radiation layer 160 made of Pt, Pd) is formed.
On the heat radiation layer 160, an antiferromagnetic layer 151 made of, for example, PtMn (platinum-manganese), for example, a pinned layer 152 made of a magnetic layer made of Co (cobalt), for example, Cu
Nonmagnetic metal layer 153 made of (copper), for example, NiFe
A free layer 154 made of (permalloy), for example, a protective layer 158 made of Ta is sequentially laminated.

The end face (the right end face in the figure) of the laminated body 105 opposite to the medium facing surface S is a tapered surface 105A. The tapered surface 105A is formed such that the distance from the medium facing surface S to the opposite surface increases in the order of the free layer 154, the nonmagnetic metal layer 153, the pinned layer 152, the antiferromagnetic layer 151, and the heat radiation layer 160. .

FIGS. 32 and 33 show a method of manufacturing an MR element. As shown in FIG. 32, the insulating layer 2, the lower shield layer 3, and the lower shield gap layer 4 are stacked on the base 1 by the same steps as in the first embodiment. Next, on the lower shield gap layer 4, Zr, B
A high-resistance nonmagnetic metal containing any of the elements i, Ta, Pt, and Pd is sputter-deposited to a thickness of 1 to 100 nm to form a heat radiation layer forming film 6 ′ for forming the heat radiation layer 160. Next, a laminated film 105 'for forming the laminated body 105 is formed on the heat radiation layer forming film 6'. Laminated film 105 '
Is an antiferromagnetic layer 151 made of, for example, PtMn (platinum-manganese), a pinned layer 152 that is a magnetic layer made of Co (cobalt), a nonmagnetic metal layer 153 made of Cu (copper), for example, NiFe (permalloy) A free layer 154 made of, for example, a protective layer 158 made of Ta.

Next, as shown in FIG.
A photoresist pattern 6d is formed at the position where the laminated body 105 ′ is formed.
Using d as a mask, the laminated film 105 ′ is etched from an oblique direction by an ion milling method using, for example, Ar (argon) ions, to form a tapered surface 105 A on the side opposite to the medium facing surface S. The inclination of the tapered surface 105A depends on the incident angle α of the ion and the photoresist pattern 6d.
Can be controlled by the thickness t. The incident angle α of the ions is adjusted in the range of 10 to 60 degrees, and the thickness t of the photoresist pattern 6 d is adjusted in the range of 0.5 to 50 μm. For example, when the incident angle α of the ions is 10 degrees and the thickness t of the photoresist pattern 6d is 3 μm, the taper angle θ of the tapered surface 105A is 15 degrees.

The subsequent steps are the same as in the first embodiment. That is, the composite head is completed by the same steps as those shown in FIGS. 5 to 12 in the first embodiment.

The MR element thus configured has the following effects. That is, since the detection of the magnetic field is performed based on the fluctuation of the magnetization direction in the free layer 154, only the free layer 154 needs to be reduced in order to cope with the high density of the magnetic recording medium. In the present embodiment,
Since the area of the antiferromagnetic layer 151 and the heat dissipation layer 160 is larger than the area of the free layer 154, the heat dissipation area can be secured by the antiferromagnetic layer 151 and the heat dissipation layer 160 even if the size of the free layer 154 is reduced. That is, the heat dissipation capability of the MR element can be improved while supporting high-density recording.

It should be noted that the MR element laminate 1 of the present embodiment is
An insulating layer 65 as in the fourth embodiment may be provided between the antiferromagnetic layer 151 of FIG.

Although the present invention has been described with reference to some embodiments, the present invention is not limited to these embodiments, and various modifications can be made. For example, the laminate in each of the above embodiments may be an AMR film or a tunnel junction type magnetoresistive film (TMR film). Further, the MR element in each of the above embodiments may be constituted by an element using an AMR film or an element using a TMR film.

Further, as the bias applying film, the bias ferromagnetic layers 55a and 55b and the bias antiferromagnetic layer 56
Instead of a and 56b, a hard magnetic film (Hard Magnet) may be used. Further, each of the free layer 54 and the pinned layer 52 may be a multilayer film having a plurality of layers. Also, the laminate 5
May be reversed, and the free layer 54, the nonmagnetic metal layer 53, the pinned layer 52, and the antiferromagnetic layer 51 may be laminated on the lower shield gap layer 4 in this order.

In each of the above embodiments, the case where the magnetic transducer of the present invention is used for a composite type thin-film magnetic head has been described. However, the magnetic transducer can be used for a read-only thin-film magnetic head.

Further, the magnetic transducer of the present invention can be applied to, for example, a sensor for detecting a magnetic signal, a memory for storing a magnetic signal, and the like, in addition to the thin-film magnetic head described in each of the above embodiments. It is possible.

[0112]

As described above, the magnetic transducer according to any one of claims 1 to 15 is provided.
The thin-film magnetic head according to any one of claims 6 to 18, the method for manufacturing a magnetic transducer according to any one of claims 19 to 26, or the method for manufacturing a thin-film magnetic head according to claim 27. According to this, since the heat radiation layer adjacent to the magnetically sensitive layer of the magnetic transducer is provided, the heat generated in the magnetically sensitive layer is radiated to the outside through the heat radiation layer, and the effect of improving the heat radiation ability is obtained.

In particular, according to the magnetic transducer of the third aspect, since the thickness of the heat radiation layer is set to 1 nm or more and 100 nm or less, a heat radiation effect can be reliably obtained and the read output can be reduced. Positive and negative asymmetry (asymmetry) can be kept within an acceptable range.

According to the fourth aspect of the present invention, since the heat radiation layer is made of a material having a higher resistance than the laminated body, the detection current is prevented from flowing to the heat radiation layer. Thus, wasteful power consumption is reduced.

According to the magnetic transducer of the present invention, since the surface area of the heat radiation layer is made larger than the surface area of the laminate, the laminate is reduced in size to cope with a high recording density. Also, it is possible to secure the surface area of the heat radiation layer as much as necessary for heat radiation.

According to the magnetic transducer of the eleventh aspect, since the insulating layer is provided between the laminated body and the heat radiating layer, the shunt of the detection current to the heat radiating layer is suppressed.
Therefore, useless power consumption is reduced.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a cross section perpendicular to a medium facing surface of a thin-film magnetic head according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a cross section of the MR element of the thin film magnetic head of FIG. 1 parallel to a medium facing surface.

FIG. 3 is a diagram illustrating a cross section perpendicular to a medium facing surface of the MR element of FIG. 2;

FIG. 4 is a diagram illustrating a planar shape of the MR element of FIG. 2;

FIG. 5 is a cross-sectional view for explaining one step in the method of manufacturing the thin-film magnetic head according to the first embodiment of the present invention.

FIG. 6 is a cross-sectional view for explaining a step following the step shown in FIG. 5;

FIG. 7 is a cross-sectional view for explaining a step following the step shown in FIG. 6;

FIG. 8 is a cross-sectional view for explaining a step following the step shown in FIG. 7;

FIG. 9 is a cross-sectional view for explaining a step following the step shown in FIG. 8;

FIG. 10 is a cross-sectional view for explaining a step following the step shown in FIG. 9;

FIG. 11 is a cross-sectional view for explaining a step following the step shown in FIG. 10;

FIG. 12 is an enlarged sectional view for explaining a step following FIG. 11;

FIG. 13 is a cross-sectional view for explaining one step in the method of manufacturing the thin-film magnetic head according to the first embodiment of the present invention, and is an enlarged view of a cross section parallel to the medium facing surface.

FIG. 14 is an enlarged sectional view for explaining a step following the step shown in FIG. 13;

FIG. 15 is an enlarged sectional view for explaining a step following the step shown in FIG. 14;

FIG. 16 is an enlarged cross-sectional view for explaining a step following the step shown in FIG. 15;

FIG. 17 is an enlarged sectional view for explaining a step following the step shown in FIG. 16;

FIG. 18 is an enlarged cross-sectional view for explaining a step following the step shown in FIG. 17;

FIG. 19 is a plan view of the thin-film magnetic head according to the first embodiment of the present invention.

FIG. 20 is a characteristic diagram illustrating an experimental result of a heat radiation effect according to the first embodiment of the present invention.

FIG. 21 is a characteristic diagram illustrating experimental results of a heat radiation effect and asymmetry according to the first embodiment of the present invention.

FIG. 22 is a diagram illustrating the concept of asymmetry.

FIG. 23 is a diagram illustrating a cross section perpendicular to a medium facing surface of an MR element according to a second embodiment of the present invention.

FIG. 24 is an enlarged cross-sectional view for explaining one step in the method of manufacturing the MR element in FIG. 23.

FIG. 25 is a diagram illustrating a cross section perpendicular to a medium facing surface of an MR element according to a third embodiment of the present invention.

FIG. 26 is an enlarged cross-sectional view for explaining one step in the method of manufacturing the MR element in FIG. 25.

FIG. 27 is a diagram illustrating a cross section parallel to a medium facing surface of an MR element according to a fourth embodiment of the present invention.

FIG. 28 is an enlarged cross-sectional view for explaining one step in the method of manufacturing the MR element in FIG. 27.

FIG. 29 is an enlarged cross-sectional view for explaining a step following the step shown in FIG. 28.

FIG. 30 is an enlarged cross-sectional view for explaining a step following the step shown in FIG. 29.

FIG. 31 is a diagram illustrating a cross section perpendicular to a medium facing surface of an MR element according to a fifth embodiment of the present invention.

FIG. 32 is an enlarged cross-sectional view for explaining one step of the method for manufacturing the MR element in FIG. 31.

FIG. 33 is an enlarged sectional view for illustrating a step following the step shown in FIG. 32;

FIG. 34 is a diagram illustrating a cross-sectional configuration of a conventional thin-film magnetic head.

FIG. 35 is a diagram showing a cross-sectional configuration of the MR element of the thin-film magnetic head of FIG. 34, which is parallel to the medium facing surface.

36 is a diagram showing a cross-sectional configuration perpendicular to the medium facing surface of the MR element of the thin-film magnetic head of FIG.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Base, 2 ... Insulating layer, 3 ... Lower shield layer, 4 ... Lower shield gap layer, 5 ... MR element, 5 '... Laminated film, 5
0: MR element, 51: Antiferromagnetic layer, 52: Pinned layer, 5
3 Nonmagnetic metal layer, 54 Free layer, 55a, 55b
Biased ferromagnetic layer, 56a, 56b: anti-ferromagnetic layer for bias, 6: heat dissipation layer, 6 ': heat dissipation layer forming film, 6a, 6
b, 6c, 6d: photoresist pattern, 65: insulating layer, 7a, 7b: lead layer, 8: upper shield gap layer, 9: upper shield layer and lower magnetic pole, 10: recording gap layer, 11, 13, 15 ... Photoresist layer, 16: upper magnetic pole, 17: overcoat layer.

Claims (27)

[Claims] 1. A magnetic transducer comprising: a magnetic sensing layer for sensing an external magnetic field; and a heat radiation layer formed adjacent to the magnetic sensing layer. 2. The magnetic transducer according to claim 1, wherein the heat radiation layer is formed adjacent to at least one surface of the magneto-sensitive layer. 3. The heat radiation layer has a thickness of 1 nm or more and 100 n or more.
m or less than m.
3. The magnetic transducer according to claim 1. 4. The magnetic transducer according to claim 1, wherein the heat radiation layer is formed of a material having a higher electric resistance than the magneto-sensitive layer. 5. The magnetic transducer according to claim 1, wherein the heat radiation layer is formed of a non-magnetic metal film. 6. The heat radiation layer is made of Zr, Bi, Ta, P
6. The magnetic transducer according to claim 5, wherein the magnetic transducer is made of a material containing any of t and Pd. 7. The magnetic transducer according to claim 1, wherein an area of a layer surface of the heat radiation layer is larger than an area of a layer surface of the magneto-sensitive layer. 8. The magnetic sensing layer and the heat radiating layer are configured such that one end surface thereof forms a surface facing an external magnetic field.
The magnetic transducer according to any one of the above. 9. The magnetic device according to claim 8, wherein a distance from the one end surface of the heat radiation layer to the opposite surface is longer than a distance from the one end surface of the magneto-sensitive layer to the opposite surface. Conversion element. 10. A surface opposite to said one end surface of said magneto-sensitive layer,
The magnetic transducer according to claim 8, wherein the magnetic transducer is inclined with respect to the one end face. 11. The magnetic transducer according to claim 1, further comprising an insulating layer provided between the magneto-sensitive layer and the heat radiation layer. 12. The insulating layer has a thickness of not less than 2 nm and not more than 30 nm.
The magnetic transducer according to claim 11, wherein the diameter is equal to or less than nm. 13. The magnetic transducer according to claim 1, wherein the magneto-sensitive layer includes a magneto-resistance effect film whose electric resistance changes by an external magnetic field. 14. The magnetic separation layer, a soft magnetic layer formed adjacent to one surface of the magnetic separation layer, the magnetization direction of which is freely changed by an external magnetic field; A ferromagnetic layer formed adjacent to the other surface of the ferromagnetic layer, and an antiferromagnetic layer formed adjacent to a surface of the ferromagnetic layer opposite to a surface adjacent to the magnetic separation layer. The magnetic transducer according to claim 13, wherein: 15. The heat dissipation layer according to claim 1, wherein the heat dissipation layer is adjacent to the antiferromagnetic layer or the soft magnetic layer.
5. The magnetic transducer according to 4. 16. A thin-film magnetic head provided with a magnetic transducer, wherein the magnetic transducer has a structure according to claim 1. Description: 17. The thin film according to claim 16, further comprising two magnetic shield layers disposed so as to face each other with the magnetic conversion element interposed therebetween, and magnetically shielding the magnetic conversion element. Magnetic head. 18. Two magnetic layers each comprising at least one layer, each magnetically coupled to each other, and including a portion of a side facing the recording medium and facing each other via a gap layer. 18. The thin-film magnetic head according to claim 16, further comprising: an inductive magnetic transducer having: a thin-film coil disposed between the two magnetic layers. 19. A method for manufacturing a magnetic transducer, comprising: a magnetic sensing layer for sensing an external magnetic field; and a heat dissipation layer formed adjacent to the magnetic sensing layer, wherein the magnetic sensing element, the heat dissipation layer, Are formed so as to be adjacent to each other. 20. The method according to claim 19, comprising the steps of: forming the heat radiation layer on a base; and forming the magneto-sensitive layer on the heat radiation layer. . 21. The method according to claim 20, further comprising the step of forming another heat radiation layer on the magnetically sensitive layer formed on the heat radiation layer. Method. 22. The method of manufacturing a magnetic transducer according to claim 19, comprising a step of forming the magneto-sensitive layer on a substrate and a step of forming the heat radiation layer on the magneto-sensitive layer. Method. 23. The method according to claim 19, wherein, in the step of forming the heat dissipation layer, the thickness of the heat dissipation layer is set to 1 nm or more and 100 nm or less. . 24. The method according to claim 19, wherein the heat dissipation layer is formed by sputtering. 25. The magnetic transducer according to claim 19, further comprising a step of forming an insulating layer interposed between the heat dissipation layer and the magneto-sensitive layer. Manufacturing method. 26. The method according to claim 25, wherein the insulating layer is formed by oxidizing a surface of the heat radiation layer. 27. A method of manufacturing a thin-film magnetic head having a magnetic transducer, wherein the step of forming the magnetic transducer is performed by using a method of manufacturing a thin-film magnetic head according to any one of claims 19 to 26. A method for manufacturing a thin-film magnetic head, which is performed using a manufacturing method.