JP2000327883A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an epoxy resin composition excellent in moldability, curability, mold release characteristics, heat resistance, and resistance to solder crack by using, as essential ingredients, an epoxy resin containing a diepoxy resin and a resin having at least three epoxy groups, a phenol resin curative, fused silica, a cure accelerator, and an organopolysiloxane. SOLUTION: An epoxy resin composition for semiconductor sealing is prepared by using, as essential ingredients, (A) an epoxy resin which contains 10-60 wt.% at least one crystalline epoxy resin selected from among epoxy resins represented by formulas I, II, and III (wherein R is H, halogen or 1-9C alkyl) and 40-90 wt.% noncrystalline epoxy resin having, on average, at least three epoxy groups, (B) a phenol resin curative, (C) fused silica in an amount of 75-93 wt.% of the composition, and (D) a polyether-group-containing organopolysiloxane exemplified by formula IV in an amount of 0.05-2 wt.% of the composition.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation which has excellent moldability and solder crack resistance and is particularly suitable for thin packages, and a semiconductor device using the same.

[0002]

2. Description of the Related Art Transfer molding of an epoxy resin composition has been employed as a method suitable for mass production at low cost as a method for encapsulating semiconductor devices such as ICs and LSIs. Improvements have been made by improving phenolic resin curing agents. However, in the recent market trend of miniaturization, weight reduction and high performance of electronic devices, the integration of semiconductors has been increasing year by year, and the surface mounting of semiconductor devices has been promoted. Demands for resin compositions are becoming more stringent. For this reason, a problem which cannot be solved by the conventional resin composition has come out. The biggest problem is that the adoption of the surface mounting of the semiconductor device causes the semiconductor device to be rapidly exposed to a high temperature of 200 ° C. or more in the solder immersion or reflow process, and the moisture absorbed by the cured product of the resin composition explodes explosively. Due to the stress at the time of vaporization, the semiconductor device is broken,
This is a phenomenon in which peeling occurs at each interface with various plated joints on the lead frame and inner leads, and the reliability is significantly reduced.

In recent years, as semiconductor devices have become thinner, the thickness of a cured product of the resin composition in the semiconductor device has become much thinner. For semiconductor devices of 64M and 256M DRAMs, TSOP having a thickness of 1 mm has become mainstream. It is getting.
These thin packages are required to have good filling properties at the time of molding the resin composition, to have little deformation of the gold wire, and to have no chip or lead frame deformation (referred to as chip shift or die pad shift). The material needs to have excellent fluidity during molding.

As a resin composition, a resin composition comprising an orthocresol novolak type epoxy resin, a phenol novolak resin and an inorganic filler represented by fused silica has been generally used. Since this resin composition involves a curing reaction between polyfunctional resins, the reactivity at the time of molding is high, and since the crosslink density after curing is high, the hardness of the cured product is high, and the releasability and heat resistance are excellent. It is widely used because of its characteristics. However, ortho-cresol novolak type epoxy resin has a high melt viscosity at the molding temperature, is inferior in fluidity at the time of molding, and has a limit in reducing the moisture absorption of the cured product because a large amount of inorganic filler cannot be blended. Further, in the case of a thin package, further improvement such as poor filling property and poor adhesion due to insufficient wettability with a base material is desired. For this reason, among the orthocresol novolak type epoxy resins, attempts have been made to improve the fluidity during molding by using one having a low molecular weight and a low softening point, but when using such a resin having a low softening point, In addition, the resin composition exhibits adhesiveness even at room temperature, and causes a fusion of the resin composition and deformation of the tablet in a manufacturing process, a use process at the time of molding, and the like, resulting in extremely poor workability.

On the other hand, although the viscosity becomes low at the molding temperature, it is a crystalline solid epoxy resin at room temperature,
3 ', 5,5'-Tetramethyl-4,4'-dihydroxybiphenyldiglycidyl ether type epoxy resin has been developed and is actually used. The resin composition using this epoxy resin can be highly filled with an inorganic filler, thereby easily realizing low moisture absorption, and exhibits high fluidity at the time of molding, so that it is excellent in filling properties such as a thin package. . However, due to the bifunctional epoxy resin, the reactivity at the time of molding is low and the curability and the releasability are inferior, and the cross-linking density after curing is low, so that the heat resistance of the molded product is reduced and the soldering process is difficult. Has insufficient reliability such as solder crack resistance.

In order to improve the above drawbacks, epoxy resins having higher crystallinity than the above-mentioned biphenyl type epoxy resins, for example, epoxy resins represented by the formulas (1), (2) and (3) Highly crystalline epoxy resin) and non-crystalline epoxy resin having an average of 3 or more epoxy groups in one molecule (hereinafter referred to as polyfunctional epoxy resin) such as orthocresol novolak type epoxy resin Is also being considered. In particular, a resin obtained by heating and mixing a highly crystalline epoxy resin and a polyfunctional epoxy resin, or a highly crystalline phenol which is a precursor of each epoxy resin and an amorphous material having an average of three or more phenolic hydroxyl groups in one molecule. Phenolic resins (hereinafter, referred to as polyfunctional phenolic resins) are preliminarily heated and mixed and then glycidyl etherified with epichlorohydrin, because the highly crystalline epoxy resin crystallizes in the polyfunctional epoxy resin, Even when a polyfunctional epoxy resin with a low softening point is used, it does not exhibit tackiness at room temperature, has excellent workability in the resin composition manufacturing process, and has a low viscosity by melting the highly crystalline epoxy resin during molding. By doing so, the resin composition becomes highly fluid, and in the case of a thin package, the filling properties are excellent, and after curing, the rigid structure of the highly crystalline epoxy resin is bridged. To form the structure, high heat resistance, such as providing a semiconductor device excellent in soldering crack resistance and is very effective. However, the highly crystalline epoxy resin melts once when the resin composition is heated and kneaded, but due to its high crystallinity, recrystallization occurs, so that the crystallinity remains even after the heat kneading, and this residual Since the crystal is melted only at the time of molding, there are disadvantages of poor moldability, such as low curability, generation of burrs and voids, and easy surface staining of the obtained semiconductor device. It was also found that a release agent such as carnauba wax having low compatibility with the resin component was separated and precipitated during the process of recrystallizing the highly crystalline epoxy resin during heating and kneading. Due to the non-uniformity of the release agent, the releasability is poor,
The mold surface is also contaminated by the release agent. In addition, since the degree of crystallinity of the highly crystalline epoxy resin depends on the heating and kneading conditions, there is also a problem in production that it is difficult to obtain a resin composition having a constant fluidity even with the same composition. I have. For the purpose of improving these, a high-crystalline epoxy resin, a polyfunctional epoxy resin, and a phenol resin curing agent are melt-mixed in advance to prepare a uniform resin having few residual crystals, and then the other compounding components are mixed. After mixing, attempts to obtain a uniform resin composition by heating and kneading have also been proposed, but since the highly crystalline epoxy resin has a property of being easily recrystallized at a kneading temperature of 80 to 110 ° C., it is stable. The resin composition has not been obtained.

[0007]

SUMMARY OF THE INVENTION The present invention has a curability, moldability, and heat resistance after molding derived from a polyfunctional epoxy resin. Epoxy resin composition for semiconductor encapsulation that can realize low viscosity and high fluidity, is excellent in filling property, mold release property, continuous moldability, is excellent in production stability without mold contamination, and is particularly suitable for thin packages. And a semiconductor device using the same.

[0008]

According to the present invention, (A) one or more crystalline epoxy resins selected from the formula (1), the formula (2) and the general formula (3) are contained in 10% of the total epoxy resin. ~ 6
A non-crystalline epoxy resin containing 0% by weight and having an average of three or more epoxy groups in one molecule is contained in all epoxy resins.
An epoxy resin containing 0 to 90% by weight, or one or more crystalline phenols (a) selected from formulas (4), (5) and (6), and a phenolic hydroxyl group in one molecule Non-crystalline phenolic resins having an average of three or more (b)
And glycidyl etherified epoxy resin, (B) phenol resin curing agent, (C) fused silica, (D) curing accelerator, and (E) An epoxy resin composition for semiconductor encapsulation, comprising 0.05 to 2% by weight of a polyether group-containing organopolysiloxane represented by the general formula (7) in the total epoxy resin composition, and This is a semiconductor device in which a semiconductor element is sealed using this.

Embedded image (R in the general formula (3) is hydrogen, halogen, carbon number 1 to
An atom or group selected from up to 9 alkyl groups;
They may be the same or different. )

[0009]

Embedded image (R in the general formula (6) is hydrogen, halogen, carbon number 1 to
An atom or group selected from up to 9 alkyl groups;
They may be the same or different. )

[0010]

Embedded image (In the formula, R ₁ represents an organic group selected from an alkyl group having 1 to 12 carbon atoms, an aryl group, and an aralkyl group, and may be the same or different. R ₂ has 1 carbon atom.
Represents an alkylene group of 1 to 9; R ₃ represents a hydrogen atom or an alkyl group having 1 to 9 carbon atoms. A represents a monovalent organic group composed of atoms selected from carbon, nitrogen, oxygen, sulfur, and hydrogen. R ₄ is an organic group selected from an alkyl group having 1 to 12 carbon atoms, an aryl group, and an aralkyl group;
Alternatively, it represents a monovalent organic group composed of atoms selected from carbon, nitrogen, oxygen, sulfur, and hydrogen, which may be the same or different. Also, the average value l,
m, n, a, and b have the following relationship. l ≧ 0, m ≧ 0, n ≧ 1, l + m + n ≧ 5, n / (l +
m + n) = 0.02 to 0.8, a ≧ 0, b ≧ 0, a + b
≧ 1)

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION The epoxy resin used in the present invention is selected from the group consisting of a biphenyl type of the formula (1), a bisphenol F type of the formula (2), and a stilbene type of the general formula (3). An epoxy resin containing 10 to 60% by weight of the total epoxy resin in the total epoxy resin and 40 to 90% by weight of the polyfunctional epoxy resin in the total epoxy resin, or a biphenyl type of the formula (4), Weight ratio of at least one crystalline phenol (a) selected from the group consisting of bisphenol F type of formula (5) and stilbene type of general formula (6) and polyfunctional phenol resin (b) (A / b) An epoxy resin (hereinafter, referred to as epoxy resin (c)) mixed at 0.05 to 1 and glycidyl etherified.

The crystalline epoxy resins represented by the formulas (1), (2) and (3) have two epoxy groups in one molecule.
Since each of these epoxy resins has extremely strong crystallinity, it is a solid at a temperature lower than the melting point, but becomes a low-viscosity liquid material at a temperature higher than the melting point. For this reason, even if the fused silica is highly filled, the melt viscosity at the time of molding the resin composition is low, and in the case of a thin package, the filling property is excellent, the gold wire deformation of the semiconductor element is small, and the chip shift and the die pad shift are reduced. Few. Specific examples of the crystalline epoxy resin represented by the general formula (3) are shown below, but are not limited thereto.

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The amount of the one or more crystalline epoxy resins selected from the formulas (1), (2) and (3) is preferably from 10 to 60% by weight of the total epoxy resin.
If the content is less than 10% by weight, the effect of lowering the viscosity is small and the fused silica cannot be filled to a high degree, so that the amount of moisture absorbed by the cured product increases, the solder crack resistance of the semiconductor device decreases, and The viscosity also increases, and for thin packages,
It is not preferable because of poor moldability. On the other hand, when the content exceeds 60% by weight, the curability of the resin composition during molding decreases, the heat resistance of the cured product decreases, and the solder crack resistance decreases, which is not preferable. On the other hand, examples of the polyfunctional epoxy resin include, for example, orthocresol novolak type epoxy resin, dicyclopentadiene-modified phenol type epoxy resin, triphenolmethane type epoxy resin, naphthalene type epoxy resin, phenol aralkyl type epoxy resin, and the like. May be used alone or as a mixture. Specific examples are shown below, but are not limited thereto.

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[0014]

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The amount of these polyfunctional epoxy resins is preferably 40 to 90% by weight based on the total weight of the epoxy resins. If it is less than 40% by weight, the curability of the resin composition at the time of molding is reduced, the heat resistance of the cured product is reduced, and the solder crack resistance is undesirably reduced. On the other hand, if the content exceeds 90% by weight, the viscosity becomes high, and in the case of a thin package, the filling property is poor and the adhesion to the base material is reduced, so that peeling is likely to occur at the interface with the base material during soldering. Further, since the fused silica cannot be filled to a high level, the amount of moisture absorbed by the cured product increases, and the solder crack resistance of the semiconductor device is undesirably reduced. One or more crystalline epoxy resins selected from the formula (1), the formula (2) and the general formula (3) and the polyfunctional epoxy resin are mixed with other compounding materials and then heated and kneaded. However, in order to further reduce the residual crystals, it is preferable to use these epoxy resins by heating and mixing them in advance.

An epoxy resin obtained by glycidyl etherifying one or more crystalline phenols (a) selected from the formulas (4), (5) and (6) and a polyfunctional phenol resin. Specific examples of the crystalline phenol represented by the general formula (6) are shown below, but are not limited thereto.

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On the other hand, polyfunctional phenolic resins include:
For example, ortho-cresol novolak resin, dicyclopentadiene-modified phenol resin, triphenolmethane resin, naphthol aralkyl resin and the like can be mentioned, and these may be used alone or in combination. Specific examples are shown below, but are not limited thereto.

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[0018]

Embedded image The weight ratio (a / b) of one or more crystalline phenols (a) selected from the formulas (4), (5) and (6) to the polyfunctional phenolic resins (b) Is 0.05
To 1 are preferable, and particularly, 0.2 to 0.5 is preferable. When the weight ratio (a / b) is less than 0.05, the property of low viscosity, low elasticity, high adhesion, and excellent solder cracking resistance derived from the crystalline epoxy resin formed when glycidyl etherified is sufficiently exhibited. It is not preferable because it cannot be done. If it exceeds 1, a high glass transition temperature and a hot bending strength derived from the polyfunctional epoxy resin formed upon glycidyl etherification cannot be sufficiently exhibited, which is not preferable. The method for synthesizing the epoxy resin (c) of the present invention is not particularly limited. For example, a mixed phenol and a polyfunctional phenol resin are dissolved in an excess of epichlorohydrin, and then an alkali metal such as sodium hydroxide or potassium hydroxide is dissolved. 50-150 ° C, preferably 60-12 ° C in the presence of hydroxide
A method of reacting at 0 ° C. for 1 to 10 hours is exemplified. After completion of the reaction, excess epichlorohydrin is distilled off, and the residue is dissolved in a solvent such as toluene or methyl isobutyl ketone, filtered, washed with water to remove inorganic salts, and then obtained by distilling off the solvent. it can. It is desirable that the generated epoxy resin (c) has as few chlorine ions, sodium ions and other free ions as possible.

The phenolic resin curing agent used in the present invention refers to all monomers, oligomers and polymers having a phenolic hydroxyl group capable of forming a crosslinked structure by a curing reaction with an epoxy resin, such as a phenol novolak resin and a phenol aralkyl resin. Phenolic resin modified with terpene, phenolic resin modified with dicyclopentadiene, bisphenol A, triphenolmethane and the like, but are not limited thereto. These phenol resin curing agents may be used alone or as a mixture. The equivalent ratio of the number of epoxy groups of all epoxy resins used in the present invention to the number of phenolic hydroxyl groups of all phenolic resin curing agents is preferably 0.5 to 2, particularly preferably 1 to 1.2.

The fused silica used in the present invention includes spherical silica and crushed silica depending on the shape and production method. The blending amount of the fused silica is preferably from 75 to 93% by weight in the whole resin composition. If the content is less than 75% by weight, the moisture absorption of the sealed semiconductor device increases, and the strength at the solder processing temperature decreases, so that cracks are likely to occur in the semiconductor device during the solder processing, which is not preferable. . On the other hand, 93% by weight
Exceeding the range is not preferred because the fluidity during molding of the resin composition is reduced and unfilling, chip shift, and pad shift are likely to occur. In particular, in order to highly fill the fused silica, it is effective to use spherical silica, and to increase the particle size distribution of the spherical silica in order to reduce the melt viscosity of the resin composition during molding.

The curing accelerator used in the present invention includes:
A substance that can serve as a catalyst for a cross-linking reaction between the epoxy resin and the phenol resin curing agent, for example, an amidine-based compound such as tributylamine, 1,8-diazabicyclo (5,4,0) undecene-7, triphenylphosphine,
Organic phosphorus compounds such as tetraphenylphosphonium / tetraphenylborate salts; and imidazole compounds such as 2-methylimidazole. These may be used alone or as a mixture.

The organopolysiloxane represented by the general formula (7) used in the present invention has a polyether group in the molecule. The organopolysiloxane of the general formula (7) is partially compatible with the resin component in a state where the resin component is molten, and has a partly incompatible surfactant activity. For this reason, when the resin composition is heated and kneaded, the organopolysiloxane of the general formula (7) prevents recrystallization of the highly crystalline epoxy resin, forms a uniform resin composition, and has little decrease in curability. There is no generation of burrs or voids, and there is no variation in fluidity due to differences in heating and kneading conditions. Furthermore, since the release agent is prevented from separating and precipitating along with the crystallization of the crystalline epoxy resin, the release agent is excellent and the mold stain and the stain on the surface of the semiconductor device as a molded product are less likely to occur. The number of polyether groups (n) is from 0.02 to 0.2 with respect to the degree of polymerization (l + m + n) of the organopolysiloxane of the general formula (7).
It is preferably in the range of 8. If it is less than 0.02, the effect of homogenizing the resin component cannot be obtained, and if it exceeds 0.8, the compatibility with the resin component becomes too high, and the surfactant effect cannot be obtained. Is unfavorable because the amount of moisture absorption increases and the solder crack resistance decreases. The molecule of the organopolysiloxane of the general formula (7) has various groups composed of atoms selected from carbon, oxygen, nitrogen, sulfur, and hydrogen atoms in addition to the polyether group. Examples of these groups include an epoxy group, a hydroxyl group, an amino group,
Functional groups having reactivity with an epoxy resin or a phenol resin curing agent such as a ureide group and a mercapto group, and an aryl group are exemplified. The addition amount of the organopolysiloxane of the general formula (7) is preferably 0.05 to 2% by weight in the whole resin composition. If the content is less than 0.05% by weight, the effect of homogenizing the resin component is not sufficient, and it is not preferable because the moldability of the resin composition cannot be improved. On the other hand, if it exceeds 2% by weight, the adhesiveness at the interface between the base material inside the semiconductor device and the cured product of the resin composition is reduced, and the cured product and the surface of the mold are contaminated during molding. It is not preferable because the property is lowered.

The resin composition of the present invention comprises, in addition to the components (A) to (E), if necessary, a flame retardant such as a brominated epoxy resin, antimony oxide, a phosphorus compound, a coupling agent, a natural wax, and a synthetic wax. , Higher fatty acids and their metal salts,
Alternatively, various additives such as a release agent such as paraffin, a colorant such as carbon black, and an antioxidant can be appropriately compounded. The resin composition of the present invention is obtained by mixing the components (A) to (E), other additives, and the like using a mixer, kneading with a kneading machine such as a roll, an extruder, cooling, and pulverizing. . Using the resin composition of the present invention to encapsulate electronic components such as semiconductor elements and manufacture semiconductor devices, transfer molding, compression molding, and curing molding may be performed by conventional molding methods such as injection molding.

Hereinafter, the present invention will be described specifically with reference to Examples. The mixing ratio is by weight. Example 1 2.9 parts by weight of an epoxy resin having the formula (8) as a main component (melting point: 103 ° C.)

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Orthocresol novolak type epoxy resin (softening point 55 ° C., epoxy equivalent 200) 4.5 parts by weight Phenol novolak resin (softening point 75 ° C., hydroxyl equivalent 103) 3.6 parts by weight Spherical fused silica 88.0 parts by weight Part 1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as DBU) 0.2 part by weight Organopolysiloxane of the formula (9) 0.3 part by weight

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After mixing 0.2 parts by weight of carnauba wax and 0.3 parts by weight of carbon black with a mixer, the surface temperature was 90 ° C. and 4 parts by weight.
The mixture was kneaded 30 times using two rolls at 5 ° C., and the obtained kneaded material sheet was cooled and pulverized to obtain a resin composition. The properties of the obtained resin composition were evaluated by the following methods. Table 1 shows the results.

Evaluation method Spiral flow: Using a mold for measuring spiral flow according to EMMI-I-66, using a mold temperature of 175 ° C.
The measurement was performed at an injection pressure of 70 kg / cm ² and a curing time of 2 minutes.
Unit cm. Chip shift: 32-pin lead-on-chip structure TSO
P (package size, 10x21mm, thickness 1.0m
m, silicon chip size 9 × 18 mm, lead frame is made of iron / nickel alloy (42 alloy), and chip and inner lead are adhered with polyimide tape of 100 μm thickness). Mold temperature 175 ° C., injection pressure 75 kg.
/ Cm ² for 2 minutes. The obtained package was cut at the center along the injection direction of the resin composition, the cross section was observed, the distance from the lower surface of the package to both ends of the chip was obtained, and the difference was defined as the chip shift amount. Unit μ
m. Burr amount: The length of the burr generated in the air vent portion during the molding of the lead-on-chip structure TSOP in which the chip shift amount was measured was measured. Unit mm. Glass transition temperature (Tg): A test piece formed by transfer molding at a mold temperature of 175 ° C. and an injection pressure of 75 kg / cm ² for 2 minutes is post-cured at 175 ° C. for 4 hours, and a thermomechanical analyzer [Seiko Electronics Co., Ltd. )-TMA-120,
Temperature rising rate 5 ° C./min]. Heat strength: Flexural strength at 240 ° C. is determined according to JIS-K6911.
It measured according to. Solder crack resistance: 100 pin TQFP (package size 14 × 14 mm, thickness 1.4 mm, silicon chip size 8.0 × 8.0 mm, lead frame made of 42 alloy) mold temperature 175 ° C., injection pressure 75 kg / c
Transfer molding was performed in m ² for 2 minutes, and post-curing was performed at 175 ° C. for 8 hours. The obtained package was left in an environment of 85 ° C. and a relative humidity of 85% for 168 hours.
For 10 seconds. Observe the package with a microscope and check for external cracks ((number of packages with cracks) /
(The total number of packages) × 100) was indicated by%. The ratio of the peeled area between the chip and the resin composition was measured using an ultrasonic flaw detector, and the peeling rate ((peeled area) / (chip area) × 100) was expressed as%. Releasability: When molding a 100-pin TQFP evaluated for the above solder crack resistance, the releasability when the mold was opened was evaluated. ○ indicates good releasability, and × indicates occurrence of mold adhesion or runner breakage. Mold stain: A mold evaluated for the releasability described above, and a mold temperature of 1
75 ° C, injection pressure 75 kg / cm ² , continuous for 2 minutes 10
Transfer molding was performed 0 times, and the surface of the mold after molding was visually observed. When discoloration was observed on the mold surface, it was indicated by x, and when it was not observed, it was indicated by ○.

Examples 2 to 4 and Comparative Examples 1 to 4 Resin compositions were obtained in the same manner as in Example 1 according to the formulations in Table 1, and evaluated in the same manner as in Example 1. Table 1 shows the results. The contents of the epoxy resins A to C used in Examples 2 to 4 and Comparative Examples 3 and 4 and the structures of the organopolysiloxanes of the formulas (12) to (15) are shown below. Epoxy resin A is 4,4'-dihydroxy-3,3 ', 5,5'-
A mixture of tetramethylstilbene and orthocresol novolak resin (softening point 70 ° C.) in a weight ratio of 9:10 is
Glycidyl etherified by an ordinary method using epichlorohydrin (epoxy equivalent: 193). Epoxy resin B is an epoxy resin obtained by subjecting a mixture of 4,4′-dihydroxybiphenyl and orthocresol novolak resin (softening point: 70 ° C.) in a weight ratio of 2: 8 to glycidyl ether using epichlorohydrin in a conventional manner. (Epoxy equivalent 190). Epoxy resin C was obtained by subjecting a mixture of bisphenol F of the formula (10) and a resin of the formula (11) (softening point: 90 ° C.) in a weight ratio of 3: 7 to glycidyl etherification in a conventional manner using epichlorohydrin. Thing (epoxy equivalent 2
60).

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[0029]

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[0030]

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[0031]

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[0032]

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[0033]

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[0034]

[Table 1]

[0035]

According to the present invention, there is obtained an epoxy resin composition for semiconductor encapsulation which is excellent in curability, filling properties and mold release properties and is particularly suitable for a thin package, and a semiconductor device using the same has a low hygroscopicity. Excellent heat resistance and solder crack resistance.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) C08L 61:06 83:08) F-term (Reference) 4J002 CC033 CC063 CC073 CD04X CD05W CD06X CP054 CP184 DJ017 EJ036 EJ046 EN028 EQ018 EU118 EW138 EW178 FA087 FD017 FD070 FD090 FD130 FD143 FD146 FD158 FD160 FD314 GJ02 GQ05 4M109 AA01 BA01 CA21 EA03 EA04 EA06 EB03 EB04 EB13 EB19 EC01 EC03

Claims (2)

[Claims] (A) A total of at least one crystalline epoxy resin selected from the formula (1), the formula (2) and the general formula (3) is contained in an amount of 10 to 60% by weight, and An epoxy resin containing 40 to 90% by weight of an amorphous epoxy resin having an average of three or more epoxy groups in a molecule in all epoxy resins, or selected from formulas (4), (5) and (6). One or more crystalline phenols (a)
The weight ratio (a / b) of the non-crystalline phenolic resin (b) having an average of three or more phenolic hydroxyl groups in the molecule is 0.
Glycidyl etherified epoxy resin, (B) phenol resin curing agent, (C) fused silica, (D) curing accelerator, and (E) 0.05 to 1 in the total epoxy resin composition. An epoxy resin composition for semiconductor encapsulation, comprising 2% by weight of a polyether group-containing organopolysiloxane represented by the general formula (7) as an essential component. Embedded image (R in the general formula (3) is hydrogen, halogen, carbon number 1 to
An atom or group selected from up to 9 alkyl groups;
They may be the same or different. ) (R in the general formula (6) is hydrogen, halogen, carbon number 1 to
An atom or group selected from up to 9 alkyl groups;
They may be the same or different. ) (In the formula, R ₁ represents an organic group selected from an alkyl group having 1 to 12 carbon atoms, an aryl group, and an aralkyl group, and may be the same or different. R ₂ has 1 carbon atom.
Represents an alkylene group of 1 to 9; R ₃ represents a hydrogen atom or an alkyl group having 1 to 9 carbon atoms. A represents a monovalent organic group composed of atoms selected from carbon, nitrogen, oxygen, sulfur, and hydrogen. R ₄ is an organic group selected from an alkyl group having 1 to 12 carbon atoms, an aryl group, and an aralkyl group;
Alternatively, it represents a monovalent organic group composed of atoms selected from carbon, nitrogen, oxygen, sulfur, and hydrogen, which may be the same or different. Also, the average value l,
m, n, a, and b have the following relationship. l ≧ 0, m ≧ 0, n ≧ 1, l + m + n ≧ 5, n / (l +
m + n) = 0.02 to 0.8, a ≧ 0, b ≧ 0, a + b
≧ 1) 2. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition according to claim 1.